TWI817388B - 陶瓷基板複合結構 - Google Patents

陶瓷基板複合結構 Download PDF

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TWI817388B
TWI817388B TW111109273A TW111109273A TWI817388B TW I817388 B TWI817388 B TW I817388B TW 111109273 A TW111109273 A TW 111109273A TW 111109273 A TW111109273 A TW 111109273A TW I817388 B TWI817388 B TW I817388B
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ceramic substrate
substrate
composite structure
electrical connection
ceramic
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邱丕良
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巨擘科技股份有限公司
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Priority to CN202210651824.XA priority patent/CN116798981A/zh
Priority to US17/883,847 priority patent/US20230318212A1/en
Priority to JP2022128539A priority patent/JP2023134326A/ja
Priority to KR1020230015419A priority patent/KR20230134421A/ko
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Abstract

一種陶瓷基板複合結構，包括：一長晶方式生成的第一陶瓷基板，具有相對的第一表面與一第二表面，本身僅具填充導電物質之垂直導通孔，以使該第一陶瓷基板的該第一表面與該第二表面產生電性連接；以及薄膜基板設置於該第一陶瓷基板之第二表面上，並以其中一表面與該第一陶瓷基板之該第二表面電性連接，且該薄膜基板之另一表面上設置有電性連接點以電性連接外部元件或另一電路板。

Description

陶瓷基板複合結構
本發明係關於陶瓷基板結構領域，且特別是關於適用多種應用的一種陶瓷基板複合結構。
傳統的陶瓷基板通常由共燒方式形成，可用於如作為電路板本體之應用。然而，傳統的陶瓷基板往往於燒結形成後於其內遺留孔洞及應力，不可避免地存在有不期望的孔洞與基板變形問題。
另外，因應未來電路板精細化大幅增加的需求，陶瓷基板內線路製作的精細化受限於其共燒形成方式，將面臨厚度無法薄化及成本大幅上升的問題。
再者，針對採用5G毫米波的高頻信號的未來通訊應用，陶瓷基板所使用的材料的介電常數雖比傳統印刷電路板之FR4要低，但相對於高頻訊號之衰變率依然過高，不利於通訊領域中應用共燒方式形成的傳統陶瓷基板。
有鑑於此，本發明提供了一種陶瓷基板複合結構，以解決上述傳統陶瓷基板所遭遇問題。
依據一實施例，本發明提供了一種陶瓷基板複合結構，包括：一長晶方式生成的第一陶瓷基板，具有相對的一第一表面與一第二表面，本身具填充導電物質之垂直導通孔，以使該第一陶瓷基板的該第一表面與該第二表面 產生電性連接；以及薄膜基板設置於該第一陶瓷基板之第二表面上，並以其中一表面與該第一陶瓷基板之該第二表面電性連接，且該薄膜基板之另一表面上設置有電性連接點以電性連接外部元件或另一電路板。
於一實施例中，該第一陶瓷基板之材料為氧化鋁或氮化鋁。
於一實施例中，於該第一陶瓷基板之第二表面及該薄膜基板之間更設置一隔熱層，以隔絕來自該陶瓷基板的第一表面所接之外部元件或電路所帶來之熱量，而該隔熱層不影響該陶瓷基板第二表面與多層薄膜基板間之電性連接。
於一實施例中，該陶瓷基板之材料可為氧化鋁或氮化鋁。
於一實施例中，更包括一第二陶瓷基板，設置於該薄膜基板遠離該第一陶瓷基板的表面上，具有相對的第三表面與第四表面，本身具填充導電物質之垂直導通孔，以使該第二陶瓷基板的該第三表面與該第四表面產生電性連接；以及該第二陶瓷基板之該第三表面並與該薄膜基板之另一表面產生電性連接，以及該第二陶瓷基板的第四表面上設置電性連接點，以電性連接外部元件或外接電路板。
於一實施例中，該第一陶瓷基板之材料為氧化鋁或氮化鋁。
10、10’、20:陶瓷基板複合結構
202:薄膜基板
204、206:陶瓷基板
2020:薄膜連接點
2022:電性連接點
2024:內部金屬層
2026:第一表面介電層
2028:內部介電層
2030:第二表面介電層
2032:薄膜本體
2040、2060:本體
2042、2062:垂直導通孔
2046、2048、2068:電性連接點
2044、2064:導電物質
2050:隔熱層
A:第一表面
B:第二表面
圖1為一剖面示意圖，顯示了依據本發明第一實施例之陶瓷基板；圖2為一剖面示意圖，依據本發明第二實施例之陶瓷基板複合結構；圖3為一剖面示意圖，顯示了依據本發明第三實施例之薄膜基板； 圖4為一剖面示意圖，顯示了根據本發明第四實施例的陶瓷基板複合結構；以及圖5為一剖面示意圖，顯示了根據本發明第五實施例的陶瓷基板複合結構。
下面將結合本發明實施例中的附圖圖1-5，對本發明實施例中的技術方案進行清楚、完整地描述。顯然，所描述的實施例僅是本發明一部分實施例，而不是全部的實施例。基於本發明中的實施例，本領域技術人員在沒有作出創造性勞動前提下所獲得的所有其他實施例，都屬本發明保護的範圍。
請參照圖1，顯示了依據本發明第一實施例之陶瓷基板204之剖面示意圖。在此，陶瓷基板204的本體2040為採用長晶(crystal growth)方式生成的氧化鋁(Al2O3)或氮化鋁(AlN)。陶瓷基板204的本體2040具有相對的第一表面A及第二表面B，而該本體2040內則形成有貫穿該第一表面A與第二表面B的多個垂直導通孔2042，該些垂直導通孔2042可用雷射鑽孔(laser drilling)或蝕刻來形成，而在該些垂直導通孔2042內可填充如銅之導電物質2044。於該第一表面A上還設置有多個電性連接點2046，分別位於每一導電物質2044與垂直導通孔2042上，以電性連接外部元件或電路。另外，於該陶瓷基板結構204之第二表面B上設置有多個電性連接點2048，分別位於每一導電物質2044與垂直導通孔2042下，以電性連接另一外部元件或另一電路板。而該些垂直導通孔2042內之導電物質2044上下分別接觸形成於該第一表面A上的電性連接點2046以及形成於該陶瓷基板結構204之第二表面B上電性連接點2048。
請參照圖2，顯示了依據本發明第二實施例之陶瓷基板複合結構10之剖面示意圖。在此，陶瓷基板複合結構10包括圖1的該陶瓷基板204及薄膜 基板202。該薄膜基板202設置於該陶瓷基板204之第二表面B上(見圖1)且該薄膜基板202遠離該陶瓷基板204的另一表面具備多個電性連接點2022以電性連接其他外部元件或另一電路板(皆未顯示)，該些電性連接點2022與該陶瓷基板204之該第二表面B(見圖1)形成電性連接。
請參照圖3，顯示了依據本發明第三實施例之薄膜基板202的剖面示意圖。在此，薄膜基板202的薄膜本體2032包括多個薄膜連接點2020、至少一內部金屬層2024及該些電性連接點2022。該薄膜本體2032還包括一第一表面介電層2026、至少一內部介電層2028、以及一第二表面介電層2030。於本實施例中，薄膜基板202包括三層內部金屬層2024及三層內部介電層2028，然而本發明並非限定於此。該些薄膜連接點2020電性連接於該陶瓷基板204第二表面之電性連接點2048，並由該第二表面B(見圖1)之電性連接點2048電性連接該第一表面A(見圖1)之電性連接點2046。
請參照圖4，顯示了根據本發明第四實施例的陶瓷基板複合結構10’之剖面示意圖。在此，陶瓷基板複合結構10’與陶瓷基板複合結構10相似，相異之處在於陶瓷基板複合結構10’中在該陶瓷基板204第二表面B及該薄膜基板202之間增設了隔熱層2050(採虛線表示)。該隔熱層2050可隔絕來自該陶瓷基板204的第一表面A(見圖1)所接收之外部元件或外部電路帶來的熱量，且該隔熱層2050不影響該陶瓷基板204的第二表面B與該薄膜基板202間之電性連接。
請參照圖5，顯示了根據本發明第五實施例的陶瓷基板複合結構20之剖面示意圖。在此，陶瓷基板複合結構20與陶瓷基板複合結構10相似，相異之處在於該薄膜基板202未設置有該陶瓷基板204的表面上設置有另一陶瓷基板206。該陶瓷基板206的配置與該陶瓷基板204相似，陶瓷基板206的本體2060 亦為採用磊晶成長方式形成的氧化鋁(Al2O3)或氮化鋁(AlN)。陶瓷基板206的本體2060內則形成有貫穿兩相對表面的多個垂直導通孔2062，該些垂直導通孔2062可用雷射鑽孔(laser drilling)或蝕刻來形成，而在該些垂直導通孔2062內可填充如銅之導電物質2064。於陶瓷基板206未接觸該薄膜基板202的表面上還設置有多個電性連接點2068，以電性連接外部元件或電路(皆未示出)。透過如此設置，該陶瓷基板206的兩相對表面形成電性連接，並使該陶瓷基板206鄰近該薄膜基板202之表面與該薄膜基板202形成電性連接。
於圖2、4、5等圖所示的本發明的各陶瓷基板複合結構中，由於其內的陶瓷基板204包括採用長晶(crystal growth)方式生成的陶瓷基板的本體，故陶瓷基板204相較於以採用共燒陶瓷材料為本體的陶瓷基板而言，便具有零孔洞、零殘留應力、及趨近平坦的極佳表面平整度等優點，故不會存在有不期望的孔洞與面臨基板變形的不期望問題。此外，本發明的各陶瓷基板複合結構中還由於本發明之導線均埋設在薄膜基板202中，而薄膜基板202常使用之有機介電質聚醯亞胺(Polyimide,PI)的介電常數約為3，亦比傳統共燒氧化鋁材料的陶瓷基板的介電常數9.4或其他陶瓷材料之介電常數低甚多。明顯的，採用本發明之陶瓷基板複合結構作為基礎所製備得到的裝置，相對於採用共燒陶瓷材料作為基礎而製備得到的陶瓷基板的裝置而言，則具有高頻訊號衰減不明顯之優點，符合未來高頻的半導體發展之應用趨勢。另外，本發明的薄膜基板亦容易形成精密且超薄之電路板，此為現有之高階封裝連接高階晶片電路板的主流。再者，本發明的各陶瓷基板複合結構的陶瓷基板具有良好的散熱性，亦適用於作為封裝基板之用，可於其上封裝如發光二極體等電子元件，並藉由所述保留陶瓷基板結構之堅固性及對發熱元件之高熱傳導性，提供元件封裝方面的解決方案。
綜上所述，雖然本發明已將優選實施例揭露如上，但上述較佳實施例並非用以限制本發明，本領域的普通技術人員，在不脫離本發明的精神和範圍內，均可作各種更動與潤飾，因此本發明的保護範圍以申請專利範圍界定的範圍為准。
10:陶瓷基板複合結構
202:薄膜基板
204:陶瓷基板
2022:電性連接點
2032:薄膜本體
2040:本體
2042:垂直導通孔
2046、2048:電性連接點
2044:導電物質

Claims (5)

  1. 一種陶瓷基板複合結構，包括： 一長晶方式生成的第一陶瓷基板，具有相對的一第一表面與一第二表面，本身具填充導電物質之垂直導通孔，以使該第一陶瓷基板的該第一表面與該第二表面產生電性連接； 以及 薄膜基板設置於該第一陶瓷基板之第二表面上，並以其中一表面與該第一陶瓷基板之該第二表面電性連接，且該薄膜基板之另一表面上設置有電性連接點以電性連接外部元件或另一電路板。
  2. 如請求項1所述之陶瓷基板複合結構，其中該第一陶瓷基板之材料為氧化鋁或氮化鋁。
  3. 如請求項1所述之陶瓷基板複合結構，其中於該第一陶瓷基板之第二表面及該薄膜基板之間更設置一隔熱層，以隔絕來自該陶瓷基板的第一表面所接之外部元件或電路所帶來之熱量，而該隔熱層不影響該陶瓷基板第二表面與多層薄膜基板間之電性連接。
  4. 如請求項1所述之陶瓷基板複合結構，更包括一第二陶瓷基板，設置於該薄膜基板遠離該第一陶瓷基板的表面上，該第二陶瓷基板具有相對的第三表面與第四表面，本身僅具填充導電物質之垂直導通孔，以使該第二陶瓷基板的該第三表面與該第四表面產生電性連接，該第二陶瓷基板之該第三表面並與該薄膜基板之另一表面產生電性連接；以及 該第二陶瓷基板之該第四表面上設置電性連接點，以電性連接外部元件或外接電路板。
  5. 如請求項1所述之陶瓷基板複合結構，其中該第一陶瓷基板之材料為氧化鋁或氮化鋁。
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JP2007109977A (ja) * 2005-10-14 2007-04-26 Murata Mfg Co Ltd セラミック基板の製造方法
JP2007317711A (ja) * 2006-05-23 2007-12-06 Tdk Corp 積層基板及びその製造方法

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JPH05243525A (ja) * 1992-02-26 1993-09-21 Seiki Daimon 半導体装置とその製造方法
WO2009081518A1 (ja) * 2007-12-26 2009-07-02 Panasonic Corporation 半導体装置および多層配線基板
JP6801705B2 (ja) * 2016-03-11 2020-12-16 株式会社村田製作所 複合基板及び複合基板の製造方法
JP6889672B2 (ja) * 2018-02-19 2021-06-18 日本特殊陶業株式会社 検査装置用配線基板

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* Cited by examiner, † Cited by third party
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JP2007109977A (ja) * 2005-10-14 2007-04-26 Murata Mfg Co Ltd セラミック基板の製造方法
JP2007317711A (ja) * 2006-05-23 2007-12-06 Tdk Corp 積層基板及びその製造方法

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