CN116798981A - 陶瓷基板复合结构 - Google Patents

陶瓷基板复合结构 Download PDF

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CN116798981A
CN116798981A CN202210651824.XA CN202210651824A CN116798981A CN 116798981 A CN116798981 A CN 116798981A CN 202210651824 A CN202210651824 A CN 202210651824A CN 116798981 A CN116798981 A CN 116798981A
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ceramic substrate
substrate
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ceramic
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邱丕良
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Princo Corp
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Abstract

一种陶瓷基板复合结构，包括：一长晶方式生成的第一陶瓷基板，具有相对的第一表面与一第二表面，本身仅具填充导电物质之垂直导通孔，以使所述第一陶瓷基板的所述第一表面与所述第二表面产生电性连接；以及薄膜基板设置于所述第一陶瓷基板之第二表面上，并以其中一表面与所述第一陶瓷基板之所述第二表面电性连接，且所述薄膜基板之另一表面上设置有电性连接点以电性连接外部元件或另一电路板。

Description

陶瓷基板复合结构
技术领域
本发明涉及陶瓷基板结构领域，尤其涉及适用多种应用的一种陶瓷基板复合结构。
背景技术
传统的陶瓷基板通常由共烧方式形成，可用于如作为电路板本体之应用。然而，传统的陶瓷基板往往于烧结形成后于其内遗留孔洞及应力，不可避免地存在有不期望的孔洞与基板变形问题。
另外，因应未来电路板精细化大幅增加的需求，陶瓷基板内线路制作的精细化受限于其共烧形成方式，将面临厚度无法薄化及成本大幅上升的问题。
再者，针对采用5G毫米波的高频信号的未来通讯应用，陶瓷基板所使用的材料的介电常数虽比传统印刷电路板之FR4要低，但相对于高频讯号之衰变率依然过高，不利于通讯领域中应用共烧方式形成的传统陶瓷基板。
发明内容
有鉴于此，本发明提供了一种陶瓷基板复合结构，以解决上述传统陶瓷基板所遭遇问题。
依据一实施例，本发明提供了一种陶瓷基板复合结构，包括：一长晶方式生成的第一陶瓷基板，具有相对的一第一表面与一第二表面，本身具填充导电物质之垂直导通孔，以使所述第一陶瓷基板的所述第一表面与所述第二表面产生电性连接；以及薄膜基板设置于所述第一陶瓷基板之第二表面上，并以其中一表面与所述第一陶瓷基板之所述第二表面电性连接，且所述薄膜基板之另一表面上设置有电性连接点以电性连接外部元件或另一电路板。
于一实施例中，所述第一陶瓷基板之材料为氧化铝或氮化铝。
于一实施例中，于所述第一陶瓷基板之第二表面及所述薄膜基板之间更设置一隔热层，以隔绝来自所述陶瓷基板的第一表面所接之外部元件或电路所带来之热量，而所述隔热层不影响所述陶瓷基板第二表面与多层薄膜基板间之电性连接。
于一实施例中，所述陶瓷基板之材料可为氧化铝或氮化铝。
于一实施例中，更包括一第二陶瓷基板，设置于所述薄膜基板远离所述第一陶瓷基板的表面上，具有相对的第三表面与第四表面，本身具填充导电物质之垂直导通孔，以使所述第二陶瓷基板的所述第三表面与所述第四表面产生电性连接；以及所述第二陶瓷基板之所述第三表面并与所述薄膜基板之另一表面产生电性连接，以及所述第二陶瓷基板的第四表面上设置电性连接点，以电性连接外部元件或外接电路板。
于一实施例中，所述第一陶瓷基板之材料为氧化铝或氮化铝。
附图说明
下面结合附图，通过对本申请的具体实施方式详细描述，将使本申请的技术方案及其它有益效果显而易见。
图1为一剖面示意图，显示了依据本发明第一实施例之陶瓷基板。
图2为一剖面示意图，依据本发明第二实施例之陶瓷基板复合结构。
图3为一剖面示意图，显示了依据本发明第三实施例之薄膜基板。
图4为一剖面示意图，显示了根据本发明第四实施例的陶瓷基板复合结构。
图5为一剖面示意图，显示了根据本发明第五实施例的陶瓷基板复合结构。
具体实施方式
下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。
下面将结合本发明实施例中的附图图1-5，对本发明实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属本发明保护的范围。
请参照图1，显示了依据本发明第一实施例之陶瓷基板204之剖面示意图。在此，陶瓷基板204的本体2040为采用长晶(crystal growth)方式生成的氧化铝(Al2O3)或氮化铝(AlN)。陶瓷基板204的本体2040具有相对的第一表面A及第二表面B，而所述本体2040内则形成有贯穿所述第一表面A与第二表面B的多个垂直导通孔2042，所述多个垂直导通孔2042可用雷射钻孔(laser drilling)或蚀刻来形成，而在所述多个垂直导通孔2042内可填充如铜之导电物质2044。于所述第一表面A上还设置有多个电性连接点2046，分别位于每一导电物质2044与垂直导通孔2042上，以电性连接外部元件或电路。另外，于所述陶瓷基板结构204之第二表面B上设置有多个电性连接点2048，分别位于每一导电物质2044与垂直导通孔2042下，以电性连接另一外部元件或另一电路板。而所述多个垂直导通孔2042内之导电物质2044上下分别接触形成于所述第一表面A上的电性连接点2046以及形成于所述陶瓷基板结构204之第二表面B上电性连接点2048。
请参照图2，显示了依据本发明第二实施例之陶瓷基板复合结构10之剖面示意图。在此，陶瓷基板复合结构10包括图1的所述陶瓷基板204及薄膜基板202。所述薄膜基板202设置于所述陶瓷基板204之第二表面B上(见图1)且所述薄膜基板202远离所述陶瓷基板204的另一表面具备多个电性连接点2022以电性连接其他外部元件或另一电路板(皆未显示)，所述多个电性连接点2022与所述陶瓷基板204之所述第二表面B(见图1)形成电性连接。
请参照图3，显示了依据本发明第三实施例之薄膜基板202的剖面示意图。在此，薄膜基板202的薄膜本体2032包括多个薄膜连接点2020、至少一内部金属层2024及所述多个电性连接点2022。所述薄膜本体2032还包括一第一表面介电层2026、至少一内部介电层2028、以及一第二表面介电层2030。于本实施例中，薄膜基板202包括三层内部金属层2024及三层内部介电层2028，然而本发明并非限定于此。所述多个薄膜连接点2020电性连接于所述陶瓷基板204第二表面之电性连接点2048，并由所述第二表面B(见图1)之电性连接点2048电性连接所述第一表面A(见图1)之电性连接点2046。
请参照图4，显示了根据本发明第四实施例的陶瓷基板复合结构10’之剖面示意图。在此，陶瓷基板复合结构10’与陶瓷基板复合结构10相似，相异之处在于陶瓷基板复合结构10’中在所述陶瓷基板204第二表面B及所述薄膜基板202之间增设了隔热层2050(采虚线表示)。所述隔热层2050可隔绝来自所述陶瓷基板204的第一表面A(见图1)所接收之外部元件或外部电路带来的热量，且所述隔热层2050不影响所述陶瓷基板204的第二表面B与所述薄膜基板206间之电性连接。
请参照图5，显示了根据本发明第五实施例的陶瓷基板复合结构20之剖面示意图。在此，陶瓷基板复合结构20与陶瓷基板复合结构10相似，相异之处在于所述薄膜基板202未设置有所述陶瓷基板204的表面上设置有另一陶瓷基板206。所述陶瓷基板206的配置与所述陶瓷基板204相似，陶瓷基板206的本体2060亦为采用磊晶成长方式形成的氧化铝(Al2O3)或氮化铝(AlN)。陶瓷基板206的本体2060内则形成有贯穿两相对表面的多个垂直导通孔2062，所述多个垂直导通孔2062可用雷射钻孔(laser drilling)或蚀刻来形成，而在所述多个垂直导通孔2062内可填充如铜之导电物质2064。于陶瓷基板206未接触所述薄膜基板202的表面上还设置有多个电性连接点2068，以电性连接外部元件或电路(皆未示出)。透过如此设置，所述陶瓷基板206的两相对表面形成电性连接，并使所述陶瓷基板206邻近所述薄膜基板202之表面与所述薄膜基板202形成电性连接。
于图2、4、5等图所示的本发明的各陶瓷基板复合结构中，由于其内的陶瓷基板204包括采用长晶(crystal growth)方式生成的陶瓷基板的本体，故陶瓷基板204相较于以采用共烧陶瓷材料为本体的陶瓷基板而言，便具有零孔洞、零残留应力、及趋近平坦的极佳表面平整度等优点，故不会存在有不期望的孔洞与面临基板变形的不期望问题。此外，本发明的各陶瓷基板复合结构中还由于本发明之导线均埋设在薄膜基板202中，而薄膜基板202常使用之有机介电质聚酰亚胺(Polyimide,PI)的介电常数约为3，亦比传统共烧氧化铝材料的陶瓷基板的介电常数9.4或其他陶瓷材料之介电常数低甚多。明显的，采用本发明之陶瓷基板复合结构作为基础所制备得到的装置，相对于采用共烧陶瓷材料作为基础而制备得到的陶瓷基板的装置而言，则具有高频讯号衰减不明显之优点，符合未来高频的半导体发展之应用趋势。另外，本发明的薄膜基板亦容易形成精密且超薄之电路板，此为现有之高阶封装连接高阶晶片电路板的主流。再者，本发明的各陶瓷基板复合结构的陶瓷基板具有良好的散热性，亦适用于作为封装基板之用，可于其上封装如发光二极体等电子元件，并藉由所述保留陶瓷基板结构之坚固性及对发热元件之高热传导性，提供元件封装方面的解决方案。
本发明已由上述相关实施例加以描述，然而上述实施例仅为实施本发明的范例。必需指出的是，已公开的实施例并未限制本发明的范围。相反地，包含于权利要求书的精神及范围的修改及均等设置均包含于本发明的范围内。

Claims (5)

1.一种陶瓷基板复合结构，包括：
一长晶方式生成的第一陶瓷基板，具有相对的一第一表面与一第二表面，本身具填充导电物质之垂直导通孔，以使所述第一陶瓷基板的所述第一表面与所述第二表面产生电性连接；以及
薄膜基板设置于所述第一陶瓷基板之第二表面上，并以其中一表面与所述第一陶瓷基板之所述第二表面电性连接，且所述薄膜基板之另一表面上设置有电性连接点以电性连接外部元件或另一电路板。
2.如权利要求1所述的陶瓷基板复合结构，其特征在于，所述第一陶瓷基板之材料为氧化铝或氮化铝。
3.如权利要求1所述的陶瓷基板复合结构，其特征在于，于所述第一陶瓷基板之第二表面及所述薄膜基板之间更设置一隔热层，以隔绝来自所述陶瓷基板的第一表面所接之外部元件或电路所带来之热量，而所述隔热层不影响所述陶瓷基板第二表面与多层薄膜基板间之电性连接。
4.如权利要求1所述的陶瓷基板复合结构，其特征在于，更包括一第二陶瓷基板，设置于所述薄膜基板远离所述第一陶瓷基板的表面上，所述第二陶瓷基板具有相对的第三表面与第四表面，本身仅具填充导电物质之垂直导通孔，以使所述第二陶瓷基板的所述第三表面与所述第四表面产生电性连接，所述第二陶瓷基板之所述第三表面并与所述薄膜基板之另一表面产生电性连接；以及
所述第二陶瓷基板之所述第四表面上设置电性连接点，以电性连接外部元件或外接电路板。
5.如权利要求4所述的陶瓷基板复合结构，其特征在于，所述第二陶瓷基板之材料为氧化铝或氮化铝。
CN202210651824.XA 2022-03-14 2022-06-10 陶瓷基板复合结构 Pending CN116798981A (zh)

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