TW202337285A - 陶瓷基板複合結構 - Google Patents

陶瓷基板複合結構 Download PDF

Info

Publication number
TW202337285A
TW202337285A TW111109273A TW111109273A TW202337285A TW 202337285 A TW202337285 A TW 202337285A TW 111109273 A TW111109273 A TW 111109273A TW 111109273 A TW111109273 A TW 111109273A TW 202337285 A TW202337285 A TW 202337285A
Authority
TW
Taiwan
Prior art keywords
ceramic substrate
substrate
composite structure
electrical connection
ceramic
Prior art date
Application number
TW111109273A
Other languages
English (en)
Other versions
TWI817388B (zh
Inventor
邱丕良
Original Assignee
巨擘科技股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 巨擘科技股份有限公司 filed Critical 巨擘科技股份有限公司
Priority to TW111109273A priority Critical patent/TWI817388B/zh
Priority to CN202210651824.XA priority patent/CN116798981A/zh
Priority to US17/883,847 priority patent/US20230318212A1/en
Priority to JP2022128539A priority patent/JP2023134326A/ja
Priority to KR1020230015419A priority patent/KR20230134421A/ko
Publication of TW202337285A publication Critical patent/TW202337285A/zh
Application granted granted Critical
Publication of TWI817388B publication Critical patent/TWI817388B/zh

Links

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/46—Manufacturing multilayer circuits
    • H05K3/4688—Composite multilayer circuits, i.e. comprising insulating layers having different properties
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/492—Bases or plates or solder therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
    • H01R12/00—Structural associations of a plurality of mutually-insulated electrical connecting elements, specially adapted for printed circuits, e.g. printed circuit boards [PCB], flat or ribbon cables, or like generally planar structures, e.g. terminal strips, terminal blocks; Coupling devices specially adapted for printed circuits, flat or ribbon cables, or like generally planar structures; Terminals specially adapted for contact with, or insertion into, printed circuits, flat or ribbon cables, or like generally planar structures
    • H01R12/70—Coupling devices
    • H01R12/71—Coupling devices for rigid printing circuits or like structures
    • H01R12/72—Coupling devices for rigid printing circuits or like structures coupling with the edge of the rigid printed circuits or like structures
    • H01R12/73—Coupling devices for rigid printing circuits or like structures coupling with the edge of the rigid printed circuits or like structures connecting to other rigid printed circuits or like structures
    • H01R12/732—Printed circuits being in the same plane
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/03—Use of materials for the substrate
    • H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C04B35/10—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on aluminium oxide
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
    • C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
    • C04B35/581—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on aluminium nitride
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/20—Aluminium oxides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/38—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C30B29/66—Crystals of complex geometrical shape, e.g. tubes, cylinders
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49827—Via connections through the substrates, e.g. pins going through the substrate, coaxial cables
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49838—Geometry or layout
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/50—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor for integrated circuit devices, e.g. power bus, number of leads
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/11—Printed elements for providing electric connections to or between printed circuits
    • H05K1/115—Via connections; Lands around holes or via connections
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/01—Dielectrics
    • H05K2201/0137—Materials
    • H05K2201/0154—Polyimide
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/46—Manufacturing multilayer circuits
    • H05K3/4611—Manufacturing multilayer circuits by laminating two or more circuit boards
    • H05K3/4623—Manufacturing multilayer circuits by laminating two or more circuit boards the circuit boards having internal via connections between two or more circuit layers before lamination, e.g. double-sided circuit boards

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Inorganic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Manufacturing & Machinery (AREA)
  • Structural Engineering (AREA)
  • Geometry (AREA)
  • Structure Of Printed Boards (AREA)
  • Printing Elements For Providing Electric Connections Between Printed Circuits (AREA)
  • Production Of Multi-Layered Print Wiring Board (AREA)
  • Combinations Of Printed Boards (AREA)

Abstract

一種陶瓷基板複合結構，包括：一長晶方式生成的第一陶瓷基板，具有相對的第一表面與一第二表面，本身僅具填充導電物質之垂直導通孔，以使該第一陶瓷基板的該第一表面與該第二表面產生電性連接； 以及薄膜基板設置於該第一陶瓷基板之第二表面上，並以其中一表面與該第一陶瓷基板之該第二表面電性連接，且該薄膜基板之另一表面上設置有電性連接點以電性連接外部元件或另一電路板。

Description

陶瓷基板複合結構
本發明係關於陶瓷基板結構領域，且特別是關於適用多種應用的一種陶瓷基板複合結構。
傳統的陶瓷基板通常由共燒方式形成，可用於如作為電路板本體之應用。然而，傳統的陶瓷基板往往於燒結形成後於其內遺留孔洞及應力，不可避免地存在有不期望的孔洞與基板變形問題。
另外，因應未來電路板精細化大幅增加的需求，陶瓷基板內線路製作的精細化受限於其共燒形成方式，將面臨厚度無法薄化及成本大幅上升的問題。
再者，針對採用5G毫米波的高頻信號的未來通訊應用，陶瓷基板所使用的材料的介電常數雖比傳統印刷電路板之FR4要低，但相對於高頻訊號之衰變率依然過高，不利於通訊領域中應用共燒方式形成的傳統陶瓷基板。
有鑑於此，本發明提供了一種陶瓷基板複合結構，以解決上述傳統陶瓷基板所遭遇問題。
依據一實施例，本發明提供了一種陶瓷基板複合結構，包括：一長晶方式生成的第一陶瓷基板，具有相對的一第一表面與一第二表面，本身具填充導電物質之垂直導通孔，以使該第一陶瓷基板的該第一表面與該第二表面產生電性連接； 以及薄膜基板設置於該第一陶瓷基板之第二表面上，並以其中一表面與該第一陶瓷基板之該第二表面電性連接，且該薄膜基板之另一表面上設置有電性連接點以電性連接外部元件或另一電路板。
於一實施例中，該第一陶瓷基板之材料為氧化鋁或氮化鋁。
於一實施例中，於該第一陶瓷基板之第二表面及該薄膜基板之間更設置一隔熱層，以隔絕來自該陶瓷基板的第一表面所接之外部元件或電路所帶來之熱量，而該隔熱層不影響該陶瓷基板第二表面與多層薄膜基板間之電性連接。
於一實施例中，該陶瓷基板之材料可為氧化鋁或氮化鋁。
於一實施例中，更包括一第二陶瓷基板，設置於該薄膜基板遠離該第一陶瓷基板的表面上，具有相對的第三表面與第四表面，本身具填充導電物質之垂直導通孔，以使該第二陶瓷基板的該第三表面與該第四表面產生電性連接； 以及該第二陶瓷基板之該第三表面並與該薄膜基板之另一表面產生電性連接，以及該第二陶瓷基板的第四表面上設置電性連接點，以電性連接外部元件或外接電路板。
於一實施例中，該第一陶瓷基板之材料為氧化鋁或氮化鋁。
下面將結合本發明實施例中的附圖圖1-5，對本發明實施例中的技術方案進行清楚、完整地描述。顯然，所描述的實施例僅是本發明一部分實施例，而不是全部的實施例。基於本發明中的實施例，本領域技術人員在沒有作出創造性勞動前提下所獲得的所有其他實施例，都屬本發明保護的範圍。
請參照圖1，顯示了依據本發明第一實施例之陶瓷基板204之剖面示意圖。在此，陶瓷基板204的本體2040為採用長晶(crystal growth)方式生成的氧化鋁(Al 2O 3)或氮化鋁(AlN)。陶瓷基板204的本體2040具有相對的第一表面A及第二表面B，而該本體2040內則形成有貫穿該第一表面A與第二表面B的多個垂直導通孔2042，該些垂直導通孔2042可用雷射鑽孔(laser drilling)或蝕刻來形成，而在該些垂直導通孔2042內可填充如銅之導電物質2044。於該第一表面A上還設置有多個電性連接點2046，分別位於每一導電物質2044與垂直導通孔2042上，以電性連接外部元件或電路。另外，於該陶瓷基板結構204之第二表面B上設置有多個電性連接點2048，分別位於每一導電物質2044與垂直導通孔2042下，以電性連接另一外部元件或另一電路板。而該些垂直導通孔2042內之導電物質2044上下分別接觸形成於該第一表面A上的電性連接點2046以及形成於該陶瓷基板結構204之第二表面B上電性連接點2048。
請參照圖2，顯示了依據本發明第二實施例之陶瓷基板複合結構10之剖面示意圖。在此，陶瓷基板複合結構10包括圖1的該陶瓷基板204及薄膜基板202。該薄膜基板202設置於該陶瓷基板204之第二表面B上(見圖1)且該薄膜基板202遠離該陶瓷基板204的另一表面具備多個電性連接點2022以電性連接其他外部元件或另一電路板(皆未顯示) ，該些電性連接點2022與該陶瓷基板204之該第二表面B(見圖1)形成電性連接。
請參照圖3，顯示了依據本發明第三實施例之薄膜基板202的剖面示意圖。在此，薄膜基板202的薄膜本體2032包括多個薄膜連接點2020、至少一內部金屬層2024及該些電性連接點2022。該薄膜本體2032還包括一第一表面介電層2026、至少一內部介電層2028、以及一第二表面介電層2030。於本實施例中，薄膜基板202包括三層內部金屬層2024及三層內部介電層2028，然而本發明並非限定於此。該些薄膜連接點2020電性連接於該陶瓷基板204第二表面之電性連接點2048，並由該第二表面B(見圖1)之電性連接點2048電性連接該第一表面A(見圖1)之電性連接點2046。
請參照圖4，顯示了根據本發明第四實施例的陶瓷基板複合結構10’之剖面示意圖。在此，陶瓷基板複合結構10’與陶瓷基板複合結構10相似，相異之處在於陶瓷基板複合結構10’中在該陶瓷基板204第二表面B及該薄膜基板202之間增設了隔熱層2050(採虛線表示)。該隔熱層2050可隔絕來自該陶瓷基板204的第一表面A(見圖1)所接收之外部元件或外部電路帶來的熱量，且該隔熱層2050不影響該陶瓷基板204的第二表面B與該薄膜基板206間之電性連接。
請參照圖5，顯示了根據本發明第五實施例的陶瓷基板複合結構20之剖面示意圖。在此，陶瓷基板複合結構20與陶瓷基板複合結構10相似，相異之處在於該薄膜基板202未設置有該陶瓷基板204的表面上設置有另一陶瓷基板206。該陶瓷基板206的配置與該陶瓷基板204相似，陶瓷基板206的本體2060亦為採用磊晶成長方式形成的氧化鋁(Al 2O 3)或氮化鋁(AlN)。陶瓷基板206的本體2060內則形成有貫穿兩相對表面的多個垂直導通孔2062，該些垂直導通孔2062可用雷射鑽孔(laser drilling)或蝕刻來形成，而在該些垂直導通孔2062內可填充如銅之導電物質2064。於陶瓷基板206未接觸該薄膜基板202的表面上還設置有多個電性連接點2068，以電性連接外部元件或電路(皆未示出)。透過如此設置，該陶瓷基板206的兩相對表面形成電性連接，並使該陶瓷基板206鄰近該薄膜基板202之表面與該薄膜基板202形成電性連接。
於圖2、4、5等圖所示的本發明的各陶瓷基板複合結構中，由於其內的陶瓷基板204包括採用長晶(crystal growth)方式生成的陶瓷基板的本體，故陶瓷基板204相較於以採用共燒陶瓷材料為本體的陶瓷基板而言，便具有零孔洞、零殘留應力、及趨近平坦的極佳表面平整度等優點，故不會存在有不期望的孔洞與面臨基板變形的不期望問題。此外，本發明的各陶瓷基板複合結構中還由於本發明之導線均埋設在薄膜基板202中，而薄膜基板202常使用之有機介電質聚醯亞胺(Polyimide,PI)的介電常數約為3，亦比傳統共燒氧化鋁材料的陶瓷基板的介電常數9.4或其他陶瓷材料之介電常數低甚多。明顯的，採用本發明之陶瓷基板複合結構作為基礎所製備得到的裝置，相對於採用共燒陶瓷材料作為基礎而製備得到的陶瓷基板的裝置而言，則具有高頻訊號衰減不明顯之優點，符合未來高頻的半導體發展之應用趨勢。另外，本發明的薄膜基板亦容易形成精密且超薄之電路板，此為現有之高階封裝連接高階晶片電路板的主流。再者，本發明的各陶瓷基板複合結構的陶瓷基板具有良好的散熱性，亦適用於作為封裝基板之用，可於其上封裝如發光二極體等電子元件，並藉由所述保留陶瓷基板結構之堅固性及對發熱元件之高熱傳導性，提供元件封裝方面的解決方案。
綜上所述，雖然本發明已將優選實施例揭露如上，但上述較佳實施例並非用以限制本發明，本領域的普通技術人員，在不脫離本發明的精神和範圍內，均可作各種更動與潤飾，因此本發明的保護範圍以申請專利範圍界定的範圍爲准。
10、10’、20:陶瓷基板複合結構 202:薄膜基板 204、206:陶瓷基板 2020:薄膜連接點 2022、2062:電性連接點 2024:內部金屬層 2026:第一表面介電層 2028:內部介電層 2030:第二表面介電層 2032:薄膜本體 2040、2060:本體 2042、2062:垂直導通孔 2046、2068:電性連接點 2044、2064:導電物質 2050:隔熱層 A:第一表面 B:第二表面
圖1為一剖面示意圖，顯示了依據本發明第一實施例之陶瓷基板； 圖2為一剖面示意圖，依據本發明第二實施例之陶瓷基板複合結構； 圖3為一剖面示意圖，顯示了依據本發明第三實施例之薄膜基板； 圖4為一剖面示意圖，顯示了根據本發明第四實施例的陶瓷基板複合結構；以及 圖5為一剖面示意圖，顯示了根據本發明第五實施例的陶瓷基板複合結構。
10:陶瓷基板複合結構
202:薄膜基板
204:陶瓷基板
2022:電性連接點
2032:薄膜本體
2040:本體
2042:垂直導通孔
2046:電性連接點
2044:導電物質
A:第一表面
B:第二表面

Claims (5)

  1. 一種陶瓷基板複合結構，包括： 一長晶方式生成的第一陶瓷基板，具有相對的一第一表面與一第二表面，本身具填充導電物質之垂直導通孔，以使該第一陶瓷基板的該第一表面與該第二表面產生電性連接； 以及 薄膜基板設置於該第一陶瓷基板之第二表面上，並以其中一表面與該第一陶瓷基板之該第二表面電性連接，且該薄膜基板之另一表面上設置有電性連接點以電性連接外部元件或另一電路板。
  2. 如請求項1所述之陶瓷基板複合結構，其中該第一陶瓷基板之材料為氧化鋁或氮化鋁。
  3. 如請求項1所述之陶瓷基板複合結構，其中於該第一陶瓷基板之第二表面及該薄膜基板之間更設置一隔熱層，以隔絕來自該陶瓷基板的第一表面所接之外部元件或電路所帶來之熱量，而該隔熱層不影響該陶瓷基板第二表面與多層薄膜基板間之電性連接。
  4. 如請求項1所述之陶瓷基板複合結構，更包括一第二陶瓷基板，設置於該薄膜基板遠離該第一陶瓷基板的表面上，該第二陶瓷基板具有相對的第三表面與第四表面，本身僅具填充導電物質之垂直導通孔，以使該第二陶瓷基板的該第三表面與該第四表面產生電性連接，該第二陶瓷基板之該第三表面並與該薄膜基板之另一表面產生電性連接；以及 該第二陶瓷基板之該第四表面上設置電性連接點，以電性連接外部元件或外接電路板。
  5. 如請求項1所述之陶瓷基板複合結構，其中該第一陶瓷基板之材料為氧化鋁或氮化鋁。
TW111109273A 2022-03-14 2022-03-14 陶瓷基板複合結構 TWI817388B (zh)

Priority Applications (5)

Application Number Priority Date Filing Date Title
TW111109273A TWI817388B (zh) 2022-03-14 2022-03-14 陶瓷基板複合結構
CN202210651824.XA CN116798981A (zh) 2022-03-14 2022-06-10 陶瓷基板复合结构
US17/883,847 US20230318212A1 (en) 2022-03-14 2022-08-09 Composite structure of ceramic substrate
JP2022128539A JP2023134326A (ja) 2022-03-14 2022-08-10 セラミック基板複合構造
KR1020230015419A KR20230134421A (ko) 2022-03-14 2023-02-06 세라믹 기판의 복합 구조체

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW111109273A TWI817388B (zh) 2022-03-14 2022-03-14 陶瓷基板複合結構

Publications (2)

Publication Number Publication Date
TW202337285A true TW202337285A (zh) 2023-09-16
TWI817388B TWI817388B (zh) 2023-10-01

Family

ID=88045634

Family Applications (1)

Application Number Title Priority Date Filing Date
TW111109273A TWI817388B (zh) 2022-03-14 2022-03-14 陶瓷基板複合結構

Country Status (5)

Country Link
US (1) US20230318212A1 (zh)
JP (1) JP2023134326A (zh)
KR (1) KR20230134421A (zh)
CN (1) CN116798981A (zh)
TW (1) TWI817388B (zh)

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4867276B2 (ja) * 2005-10-14 2012-02-01 株式会社村田製作所 セラミック基板の製造方法
JP4613878B2 (ja) * 2006-05-23 2011-01-19 Ｔｄｋ株式会社 積層基板及びその製造方法

Also Published As

Publication number Publication date
KR20230134421A (ko) 2023-09-21
CN116798981A (zh) 2023-09-22
US20230318212A1 (en) 2023-10-05
TWI817388B (zh) 2023-10-01
JP2023134326A (ja) 2023-09-27

Similar Documents

Publication Publication Date Title
KR100188620B1 (ko) 전자적 패키지
US6184477B1 (en) Multi-layer circuit substrate having orthogonal grid ground and power planes
US8139368B2 (en) Component-containing module
JPH01307236A (ja) 電子デバイス組立体及びその製造方法
CN1115169A (zh) 安装基板
US6323435B1 (en) Low-impedance high-density deposited-on-laminate structures having reduced stress
CN102638931B (zh) 电子组件、使寄生电容最小的方法及电路板结构制造方法
JP2000150772A (ja) マルチチップモジュール及びその製造方法
KR100495211B1 (ko) 세라믹 다층기판 및 그 제조방법
KR100887133B1 (ko) 저온 동시 소성 세라믹 기판
US11690173B2 (en) Circuit board structure
TWI817388B (zh) 陶瓷基板複合結構
JP2004511111A (ja) プリント回路基板，そのようなプリント回路基板の製造方法，及びそのようなプリント回路基板用の層状複合材料
TWI806490B (zh) 封裝基板結構
CN105047618A (zh) 一种有机复合材料厚膜器件基板
JPH0513610A (ja) 半導体集積回路チツプ実装用基板
JP2020092138A (ja) 高周波回路用プリント配線板およびその製造方法
JP2004048617A (ja) 高周波用伝送線路基板
CN110277367B (zh) 一种ltcc基板结构及其激光加工方法
CN113260137B (zh) 印刷电路板、电路板组件及电源设备
JPH0433396A (ja) 空気層を有するセラミック多層プリント板
TWM616053U (zh) 封裝測試用之積體電路載板構造
KR100878399B1 (ko) 저온동시소성 세라믹 기판 및 그 제조 방법
JP2871613B2 (ja) マルチチップモジュール用基板及びその製造方法
TW202312808A (zh) 具有內埋芯片的線路板及其製作方法