TWI816937B - Substrate treatment apparatus, and substrate treatment method - Google Patents
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Abstract
本發明之課題在於容易地進行利用基板處理裝置對基板實施之處理的客製。 An object of the present invention is to easily customize the processing performed on a substrate using a substrate processing apparatus.
基板處理裝置具備有2個以上之藥液處理部、儲存部、及控制部。各藥液處理部包含處理槽及液體供給部。處理槽利用處理液對基板實施處理。液體供給部對處理槽供給處理液。儲存部對各藥液處理部儲存有關基板之每單位處理量之處理液之供給量的數值資訊。控制部具有取得部、識認部、算出部、及供給控制部。算出部根據數值資訊中與由識認部所識認之1個藥液處理部對應之有關基板之每單位處理量之處理液之供給量的數值、及由取得部所取得之處理量資訊,來算出有關供給至1個藥液處理部之處理槽之處理液之供給量的數值。供給控制部根據由算出部所算出之數值,使處理液藉由液體供給部供給至處理槽。 The substrate processing device is equipped with two or more chemical solution processing parts, a storage part, and a control part. Each chemical liquid treatment unit includes a treatment tank and a liquid supply unit. The processing tank processes the substrate using a processing liquid. The liquid supply unit supplies the processing liquid to the processing tank. The storage unit stores numerical information on the supply amount of the processing liquid per unit processing amount of the substrate for each chemical liquid processing unit. The control unit includes an acquisition unit, a recognition unit, a calculation unit, and a supply control unit. The calculation unit uses the numerical value of the supply amount of the processing liquid per unit processing amount of the substrate corresponding to one chemical liquid processing unit recognized by the recognition unit in the numerical information and the processing amount information acquired by the acquisition unit, Calculate the numerical value regarding the supply amount of the treatment liquid supplied to the treatment tank of one chemical solution treatment unit. The supply control unit supplies the processing liquid to the processing tank through the liquid supply unit based on the numerical value calculated by the calculation unit.
Description
本發明係關於藉由處理液對半導體晶圓、液晶顯示器用基板、電漿顯示器用基板、有機電致發光(EL;Electroluminescenee)用基板、場發射顯示器(FED;Field Emission Display)用基板、光顯示器用基板、磁碟用基板、磁光碟用基板、光罩用基板及太陽能電池用基板等之基板實施蝕刻處理及洗淨處理之技術。 The present invention relates to the treatment of semiconductor wafers, liquid crystal display substrates, plasma display substrates, organic electroluminescence (EL; Electroluminescenee) substrates, field emission display (FED; Field Emission Display) substrates, light Technology for etching and cleaning of substrates such as display substrates, magnetic disk substrates, magneto-optical disk substrates, photomask substrates, and solar cell substrates.
例如,存在有藉由使基板浸漬於被貯存在處理槽之處理液而對基板實施處理之基板處理裝置(例如,專利文獻1等)。於該基板處理裝置中,例如,依照規定對基板之處理等之配方,來執行對基板之各種動作及處理。
For example, there is a substrate processing apparatus that processes the substrate by immersing the substrate in a processing liquid stored in a processing tank (for example,
如此之基板處理裝置例如存在有如下者:具有用以對基板實施相同之處理之複數個處理槽,並依照相同之配方,於複數個處理槽中並行地對基板實施相同之處理。 For example, there are such substrate processing apparatuses that have a plurality of processing tanks for performing the same processing on the substrates, and perform the same processing on the substrates in parallel in the plurality of processing tanks according to the same recipe.
[先前技術文獻] [Prior technical literature]
[專利文獻] [Patent Document]
[專利文獻1]日本專利特開2009-260257號公報 [Patent Document 1] Japanese Patent Application Laid-Open No. 2009-260257
然而,即便複數個處理槽具有相同之構成,仍會因例如使用年數、配管的狀況、振動或溫度等之外在因素、使用次數以及配置等的差異,而使得在複數個處理槽中對基板實施相同之處理所得之結果產生差異。 However, even if a plurality of treatment tanks have the same structure, there will still be differences in external factors such as age, piping conditions, vibration or temperature, usage times, and configurations. Substrates subjected to the same treatment may produce different results.
又,近年來,例如存在有對於對基板實施之處理之細微之要求增多的傾向。伴隨於此,配方之內容變得複雜化,而進行配方之製作及編輯的作業逐漸地變困難。 Furthermore, in recent years, there has been a tendency that, for example, there has been an increase in the demand for minute processing performed on a substrate. Along with this, the content of the recipe becomes complicated, and the work of creating and editing the recipe gradually becomes difficult.
該等問題並不限於藉由使基板浸漬於被貯存在處理槽之處理液而對基板實施處理之所謂分批式之基板處理裝置,於自噴嘴對基板吐出處理液而對基板實施使用處理液之處理之所謂單片式之基板處理裝置等之一般的基板處理裝置中亦會產生。 These problems are not limited to the so-called batch-type substrate processing apparatus that processes the substrates by immersing the substrates in the processing liquid stored in the processing tank. The processing liquid is discharged from the nozzle to the substrates and the substrates are treated with the processing liquid. The processing can also occur in general substrate processing equipment such as so-called single-chip substrate processing equipment.
本發明係鑒於上述課題所完成者,其目的在於提供可容易地執行對於在基板處理裝置中對基板實施之處理之客製的技術。 The present invention has been accomplished in view of the above-mentioned problems, and an object thereof is to provide a technology that can easily perform customization of processing performed on a substrate in a substrate processing apparatus.
為了解決上述課題,第1態樣之基板處理裝置具備有2個以上之藥液處理部、儲存部、及控制部。上述2個以上之藥液處理部之各者具有處理槽及液體供給部。上述處理槽利用所貯存之處理液對基板實施處理。上述液體供給部對上述處理槽供給處理液。上述儲存部對各個上述藥液處理部,儲存有關基板之每單位處理量之處理液之供給量的數值資訊。上述控制部具有取得部、識認部、算出部及供給控制部。上述取得部取得有關成為處理之對象之 基板之處理量的處理量資訊。上述識認部識認上述2個以上之藥液處理部中用以對基板實施處理之1個藥液處理部。上述算出部根據上述數值資訊中與由上述識認部所識認之上述1個藥液處理部對應之有關基板之每單位處理量之處理液之供給量的數值、及由上述取得部所取得之上述處理量資訊,來算出有關供給至上述1個藥液處理部之處理槽之處理液之供給量的數值。上述供給控制部根據由上述算出部所算出之數值,而於上述1個藥液處理部使處理液藉由上述液體供給部供給至上述處理槽。 In order to solve the above-mentioned problems, the substrate processing apparatus of the first aspect includes two or more chemical solution processing units, a storage unit, and a control unit. Each of the two or more chemical solution treatment units has a treatment tank and a liquid supply unit. The above-mentioned processing tank uses the stored processing liquid to process the substrate. The liquid supply part supplies the processing liquid to the processing tank. The storage unit stores numerical information on the supply amount of the processing liquid per unit processing amount of the substrate for each of the chemical liquid processing units. The control unit includes an acquisition unit, a recognition unit, a calculation unit, and a supply control unit. The above-mentioned acquisition department acquires the information that is the subject of processing. Throughput information for substrate throughput. The recognition unit recognizes one of the two or more chemical liquid processing units used to process the substrate. The above-mentioned calculation part is based on the numerical value of the supply amount of the processing liquid per unit processing amount of the substrate corresponding to the above-mentioned one chemical liquid processing part recognized by the above-mentioned recognition part in the above-mentioned numerical information and the above-mentioned acquisition part. The above-mentioned processing amount information is used to calculate a numerical value regarding the supply amount of the processing liquid supplied to the processing tank of the above-mentioned one chemical liquid processing unit. The supply control unit causes the one chemical liquid treatment unit to supply the treatment liquid to the treatment tank through the liquid supply unit based on the numerical value calculated by the calculation unit.
第2態樣之基板處理裝置係第1態樣之基板處理裝置,其進一步具備有用以計測基板之處理量之感測器部。上述取得部根據利用上述感測器部之計測結果,來取得上述處理量資訊。 The substrate processing apparatus of the second aspect is the substrate processing apparatus of the first aspect, and further includes a sensor unit for measuring the processing amount of the substrate. The above-mentioned acquisition unit acquires the above-mentioned throughput information based on the measurement result using the above-mentioned sensor unit.
第3態樣之基板處理裝置係第1或第2態樣之基板處理裝置,其中,上述儲存部儲存包含上述數值資訊且規定處理之條件的配方。 A substrate processing apparatus according to a third aspect is the substrate processing apparatus according to the first or second aspect, wherein the storage unit stores a recipe including the numerical information and specifying processing conditions.
第4態樣之基板處理裝置係第3態樣之基板處理裝置,其中,上述數值資訊包含相對於上述2個以上之藥液處理部之有關基板之每單位處理量之處理液之供給量的基準值、及相對於上述2個以上之藥液處理部中之至少1個藥液處理部之有關基板之每單位處理量之處理液之供給量的調整值。上述算出部根據上述數值資訊中之上述基準值及與由上述識認部所識認之上述1個藥液處理部對應之上述調整值、及由上述取得部所取得之上述處理量資訊,來算出在上述1個藥液處理部中有關供給至上述處理槽之處理液之供給量的數值。 A substrate processing apparatus according to a fourth aspect is a substrate processing apparatus according to the third aspect, wherein the numerical information includes a supply amount of the processing liquid per unit processing amount of the relevant substrate in the two or more chemical liquid processing units. The reference value, and the adjustment value of the supply amount of the processing liquid per unit processing amount of the relevant substrate with respect to at least one of the above two or more chemical liquid processing sections. The calculation unit calculates the calculation based on the reference value in the numerical information, the adjustment value corresponding to the one chemical processing unit recognized by the recognition unit, and the processing amount information acquired by the acquisition unit. Calculate the numerical value of the supply amount of the processing liquid supplied to the above-mentioned treatment tank in the above-mentioned one chemical liquid treatment section.
第5態樣之基板處理裝置係第3或第4態樣之基板處 理裝置,其中,上述配方規定藉由上述液體供給部而對上述處理槽供給處理液之時機。 The substrate processing device of the fifth aspect is the substrate processing unit of the third or fourth aspect. The processing device, wherein the recipe specifies the timing of supplying the processing liquid to the processing tank through the liquid supply part.
第6態樣之基板處理裝置係第3至第5態樣中任一態樣之基板處理裝置,其進一步具備有回應使用者之動作而輸入信號之輸入部。上述控制部進一步具有配方製作部,該配方製作部根據回應使用者之動作而由上述輸入部所輸入之信號,將上述數值資訊所包含之關於上述2個以上之藥液處理部之各者之有關基板之每單位處理量之處理液之供給量的數值記述於上述配方,藉此製作或編輯上述配方。 The substrate processing apparatus of the sixth aspect is the substrate processing apparatus of any one of the third to fifth aspects, and further includes an input section for inputting a signal in response to a user's action. The above-mentioned control unit further has a recipe creation unit that generates the numerical information contained in the above-mentioned numerical information regarding each of the above-mentioned two or more chemical liquid processing units according to the signal input from the above-mentioned input unit in response to the user's action. The numerical value of the supply amount of the processing liquid per unit processing volume of the substrate is described in the above recipe, thereby creating or editing the above recipe.
第7態樣之基板處理裝置係第1至第5態樣中任一態樣之基板處理裝置,其進一步具備有回應使用者之動作而輸入信號之輸入部。上述控制部進一步具有模式切換部,該模式切換部根據回應使用者之動作而由上述輸入部所輸入之信號,將模式在第1液體供給模式與第2液體供給模式之間進行切換。上述第1液體供給模式係如下之模式:上述算出部根據上述數值資訊中與由上述識認部所識認之上述1個藥液處理部對應之有關基板之每單位處理量之處理液之供給量的數值、及由上述取得部所取得之上述處理量資訊,來算出有關供給至上述1個藥液迅理部之處理槽之處理液之供給量的數值,且上述供給控制部根據由上述算出部所算出之數值,而於上述1個藥液處理部中使處理液藉由上述液體供給部供給至上述處理槽。上述第2液體供給模式係如下之模式:上述控制部使將預先所設定之量之處理液藉由上述液體供給部供給至由上述識認部所識認之上述1個藥液處理部之處理槽。 A seventh aspect of the substrate processing apparatus is the substrate processing apparatus of any one of the first to fifth aspects, and further includes an input section for inputting a signal in response to a user's action. The control unit further includes a mode switching unit that switches the mode between the first liquid supply mode and the second liquid supply mode based on a signal input from the input unit in response to a user's action. The first liquid supply mode is a mode in which the calculation unit supplies the processing liquid per unit processing amount of the substrate corresponding to the one chemical liquid processing unit recognized by the recognition unit in the numerical information. The numerical value of the amount of the processing liquid supplied to the processing tank of the above-mentioned one chemical liquid processing section and the above-mentioned processing amount information obtained by the above-mentioned acquisition section are calculated. The numerical value calculated by the calculation part is used to supply the treatment liquid to the treatment tank through the liquid supply part in the one chemical solution treatment part. The above-mentioned second liquid supply mode is a mode in which the above-mentioned control part supplies a preset amount of processing liquid to the above-mentioned one chemical solution processing part recognized by the above-mentioned recognition part through the above-mentioned liquid supply part. groove.
第8態樣之基板處理裝置係第6態樣之基板處理裝 置,其進一步具備有顯示部。上述控制部進一步具有:畫面製作部,其製作用以製作或編輯上述配方之配方輸入畫面的資訊;及顯示控制部,其使上述配方輸入畫面顯示於上述顯示部。上述配方輸入畫面包含第1區域及第2區域。上述第1區域包含對關於在依照上述配方所執行之處理中不依存於時間之經過之條件之複數個第1設定項目之各者記述條件的區域。上述第2區域包含對關於在依照上述配方所執行之處理中依存於時間之經過之條件之複數個第2設定項目之各者記述條件的區域。上述配方製作部根據回應使用者之動作而由上述輸入部所輸入之信號,並根據在上述配方輸入畫面中對各個上述第1設定項目記述之條件、及在上述配方輸入畫面中對各個上述第2設定項目所記述之條件,來製作或編輯上述配方。上述畫面製作部根據回應使用者之動作而由上述輸入部所輸入之信號,於上述配方輸入畫面中,將上述第1區域之上述複數個第1設定項目中之1個以上之第1設定項目,變更為上述第2區域之上述複數個第2設定項目中之1個以上之第2設定項目,並根據回應使用者之動作而由上述輸入部所輸入之信號,於上述配方輸入畫面中,將上述第2區域之上述複數個第2設定項目中之1個以上之第2設定項目,以包含於上述第1區域之上述複數個第1設定項目之方式變更為1個以上之第1設定項目。 The substrate processing apparatus of the eighth aspect is the substrate processing apparatus of the sixth aspect. The device is further equipped with a display part. The control unit further includes: a screen creation unit that creates information for creating or editing a recipe input screen for the recipe; and a display control unit that causes the recipe input screen to be displayed on the display unit. The above-mentioned recipe input screen includes a first area and a second area. The first area includes an area for describing conditions for each of a plurality of first setting items regarding conditions that do not depend on the passage of time in the processing executed according to the recipe. The above-mentioned second area includes an area for describing conditions for each of a plurality of second setting items regarding conditions that depend on the passage of time in the processing executed according to the above-mentioned recipe. The above-mentioned recipe creation unit responds to the signal input from the above-mentioned input unit in response to the user's action, and based on the conditions described for each of the above-mentioned first setting items in the above-mentioned recipe input screen, and the above-mentioned recipe input screen for each of the above-mentioned first setting items. 2Set the conditions described in the project to create or edit the above recipe. The above-mentioned screen creation unit sets one or more first setting items among the above-mentioned plurality of first setting items in the above-mentioned first area in the above-mentioned recipe input screen based on the signal input from the above-mentioned input unit in response to the user's action. , changing to one or more second setting items among the plurality of second setting items in the above-mentioned second area, and in the above-mentioned recipe input screen according to the signal input from the above-mentioned input part in response to the user's action, Changing one or more second setting items among the plurality of second setting items in the above-mentioned second area to one or more first settings in a manner that is included in the plurality of first setting items in the above-mentioned first area. project.
第9態樣之基板處理裝置係第8態樣之基板處理裝置,其中,上述畫面製作部禁止將上述第1區域之上述複數個第1設定項目中之預先所設定之既定之1個以上之第1設定項目,以包含於上述第2區域之上述複數個第2設定項目之方式變更為1個以上之第2設定項目。 A substrate processing apparatus according to a ninth aspect is a substrate processing apparatus according to the eighth aspect, wherein the screen creation unit prohibits the setting of more than one predetermined preset among the plurality of first setting items in the first area. The first setting item is changed to one or more second setting items in a manner that the plurality of second setting items included in the second area are included.
第10態樣之基板處理裝置係第8或第9態樣之基板處理裝置,其中,上述畫面製作部於上述配方輸入畫面中,於在上述第1區域有分別包含有關上述複數個第1設定項目之2個以上之第1設定項目之複數個第1設定項目群之各者之群組名相關之第1顯示要素存在之情形時,根據回應使用者之動作而由上述輸入部所輸入之信號,針對上述複數個第1設定項目群中的每一個第1設定項目群,將上述第1區域之上述2個以上之第1設定項目以包含於上述第2區域之上述複數個第2設定項目之方式變更為2個以上之第2設定項目。 A substrate processing apparatus of a tenth aspect is a substrate processing apparatus of the eighth or ninth aspect, wherein the screen creation unit includes the plurality of first settings in the recipe input screen in the first area. When the first display element related to the group name of each of the plurality of first setting item groups of two or more first setting items exists, it is input by the above-mentioned input unit in response to the user's action. The signal includes, for each first setting item group in the plurality of first setting item groups, the two or more first setting items in the first area to be included in the plurality of second settings in the second area. The item format is changed to two or more second setting items.
第11態樣之基板處理裝置係第6態樣之基板處理裝置,其進一步具備有顯示部。上述控制部進一步具有:畫面製作部,其製作用以製作或編輯上述配方之配方輸入畫面的資訊;及顯示控制部,其使上述配方輸入畫面顯示於上述顯示部。上述配方輸入畫面包含第1區域及第2區域。上述第1區域包含:對關於在依照上述配方所執行之處理中不依存於時間之經過之條件之複數個第1設定項目之各者記述條件的區域。上述第2區域包含:對關於在依照上述配方所執行之處理中依存於時間之經過之條件之複數個第2設定項目之各者記述條件的區域。上述配方製作部根據回應使用者之動作而由上述輸入部所輸入之信號,並根據在上述配方輸入畫面中對各個上述第1設定項目所記述之條件、及在上述配方輸入畫面中對各個上述第2設定項目記述之條件,來製作或編輯上述配方。於上述第1區域有分別包含有關上述複數個第1設定項目之2個以上之第1設定項目之複數個第1設定項目群之各者之群組名的第1顯示要素存在。上述畫面製作部根據回應使用者之動作而由上述輸入 部所輸入之信號,而在上述顯示部所顯示之上述配方輸入畫面中,將上述複數個第1設定項目群中之1個第1設定項目群所包含之上述2個以上之第1設定項目之顯示狀態,在進行顯示之展開狀態與未進行顯示之壓縮狀態之間進行切換。 The substrate processing apparatus of the 11th aspect is the substrate processing apparatus of the 6th aspect, and is further equipped with a display part. The control unit further includes: a screen creation unit that creates information for creating or editing a recipe input screen for the recipe; and a display control unit that causes the recipe input screen to be displayed on the display unit. The above-mentioned recipe input screen includes a first area and a second area. The first area includes an area for describing conditions for each of a plurality of first setting items regarding conditions that do not depend on the passage of time in the processing executed according to the recipe. The above-mentioned second area includes an area for describing conditions for each of a plurality of second setting items regarding conditions that depend on the passage of time in the processing executed according to the above-mentioned recipe. The above-mentioned recipe creation unit responds to the signal input from the above-mentioned input unit in response to the user's action, and based on the conditions described for each of the above-mentioned first setting items in the above-mentioned recipe input screen, and the above-mentioned recipe input screen for each of the above-mentioned setting items. The conditions described in the second setting item are used to create or edit the above recipe. A first display element including a group name of each of a plurality of first setting item groups regarding two or more first setting items of the plurality of first setting items exists in the first area. The above-mentioned screen production part responds to the user's action and generates the above-mentioned input The above-mentioned two or more first setting items included in one of the above-mentioned plurality of first setting item groups are included in the above-mentioned recipe input screen displayed by the above-mentioned display unit. The display state switches between the expanded state of display and the compressed state of non-display.
第12態樣之基板處理方法係具備有分別具有利用所貯存之處理液對基板實施處理之處理槽、及對該處理槽供給處理液之液體供給部之2個以上之藥液處理部的基板處理裝置之基板處理方法,其具有(a)步驟、(b)步驟、(c)步驟、(d)步驟、及(e)步驟。於上述(a)步驟中,對各個上述藥液處理部,使有關基板之每單位處理量之處理液之供給量的數值資訊儲存於儲存部。於上述(b)步驟中,取得成為處理之對象之基板的處理量。於上述(c)步驟中,識認上述2個以上之藥液處理部中之用來使用於對基板實施處理之1個藥液處理部。於上述(d)步驟中,根據上述數值資訊中與在上述(c)步驟所識認之上述1個藥液處理部對應之有關每單位處理量之處理液之供給量的數值、及在上述(b)步驟所取得之上述處理量,算出有關供給至上述1個藥液處理部之處理槽之處理液之供給量的數值。上述(e)步驟根據在上述(d)步驟所算出之數值,而於上述1個藥液處理部中,使處理液藉由上述液體供給部供給至上述處理槽。 The substrate processing method according to the twelfth aspect is a substrate including two or more chemical liquid processing units each having a processing tank for processing the substrate using the stored processing liquid, and a liquid supply unit for supplying the processing liquid to the processing tank. A substrate processing method of a processing device, which has (a) step, (b) step, (c) step, (d) step, and (e) step. In the above-mentioned step (a), for each of the above-mentioned chemical liquid processing units, numerical information on the supply amount of the processing liquid per unit processing amount of the substrate is stored in the storage unit. In the above step (b), the throughput of the substrate to be processed is obtained. In the above-mentioned step (c), one of the two or more chemical solution processing parts used for processing the substrate is identified. In the above (d) step, based on the numerical value of the supply amount of the processing liquid per unit processing volume corresponding to the above-mentioned one chemical liquid processing unit recognized in the above (c) step in the above numerical information, and the above-mentioned (b) Calculate the numerical value regarding the supply amount of the treatment liquid supplied to the treatment tank of the one chemical liquid treatment unit based on the above-mentioned processing amount obtained in the step (b). The step (e) supplies the treatment liquid to the treatment tank through the liquid supply part in the one chemical solution treatment part based on the numerical value calculated in the step (d).
即使藉由第1態樣之基板處理裝置及第12態樣之基板處理方法之任一者,例如均可針對每個處理槽將與基板之處理量對應之量的處理液供給至處理槽。藉此,例如不易產生處理液使用上的浪費、以及因處理液過度之供給所導致過度之處理等之不良狀況。其結果,例如於基板處理裝置中,可針對每個處理槽容易地執 行對於對基板實施之處理的客製。因此,例如在基板處理裝置中,可容易地執行對於對基板實施之處理的客製。 Even with any one of the substrate processing apparatus of the first aspect and the substrate processing method of the twelfth aspect, for example, an amount of the processing liquid corresponding to the processing amount of the substrate can be supplied to the processing tank for each processing tank. This makes it less likely to cause problems such as wasteful use of the processing liquid and excessive processing due to excessive supply of the processing liquid. As a result, for example, in a substrate processing apparatus, it is possible to easily perform processing for each processing tank. Customize the processing performed on the substrate. Thus, for example in a substrate processing apparatus, customization of the processing performed on the substrate can be easily performed.
根據第2態樣之基板處理裝置,例如可根據由基板處理裝置所計測之基板之處理量,來針對每個處理槽將與基板之處理量對應之量的處理液供給至處理槽。藉此,例如可於基板處理裝置內,針對每個處理槽執行對於對基板實施之處理的客製。 According to the substrate processing apparatus of the second aspect, for example, based on the processing amount of the substrate measured by the substrate processing apparatus, the processing liquid in an amount corresponding to the processing amount of the substrate can be supplied to the processing tank for each processing tank. Thereby, for example, customization of the processing performed on the substrate can be performed for each processing tank in a substrate processing apparatus.
根據第3態樣之基板處理裝置,例如可依照1個配方,使用2個處理槽並行地對基板實施處理。藉此,例如可利用1個配方,針對每個處理槽將與基板之處理量對應之量的處理液供給至處理槽。藉此,例如可於基板處理裝置中容易地執行對於對基板實施之處理的客製。 According to the substrate processing apparatus of the third aspect, for example, the substrate can be processed in parallel using two processing tanks according to one recipe. Thereby, for example, one recipe can be used to supply an amount of the processing liquid corresponding to the processing amount of the substrate to the processing tank for each processing tank. Thereby, customization of the processing performed on the substrate can be easily performed, for example, in a substrate processing apparatus.
根據第4態樣之基板處理裝置,例如藉由於1個配方中變更調整值,而可針對每個處理槽將與基板之處理最對應之量之處理液供給至處理槽。藉此,例如可容易地製作配方。因此,例如可於基板處理裝置中容易地執行對於對基板實施之處理的客製。 According to the substrate processing apparatus of the fourth aspect, for example, by changing the adjustment value in one recipe, it is possible to supply an amount of the processing liquid that best corresponds to the processing of the substrate to the processing tank for each processing tank. This makes it possible, for example, to easily prepare recipes. Thus, for example, customization of the processing performed on the substrate can be easily performed in a substrate processing apparatus.
根據第5態樣之基板處理裝置,例如可針對每個處理槽,將與基板之處理量對應之量的處理液於適當之時機供給至處理槽。 According to the substrate processing apparatus of the fifth aspect, for example, for each processing tank, an amount of processing liquid corresponding to the processing amount of the substrate can be supplied to the processing tank at an appropriate timing.
根據第6態樣之基板處理裝置,例如操作員可針對每個處理槽執行對於對基板實施之處理的客製。 According to the substrate processing apparatus of the sixth aspect, for example, the operator can customize the processing performed on the substrate for each processing tank.
根據第7態樣之基板處理裝置,例如在每個處理槽對基板之處理之結果未產生差異之情形等時,可藉由設定為第2液體供給模式而省略有關基板之每單位處理量之處理液之供給量的數值之設定。藉此,例如可減少設定處理之條件之操作員的作業量。 According to the substrate processing apparatus of the seventh aspect, for example, when there is no difference in the processing results of the substrates in each processing tank, the calculation of the processing amount per unit of the substrate can be omitted by setting the second liquid supply mode. Set the numerical value of the supply amount of treatment liquid. This can reduce the workload of an operator who sets processing conditions, for example.
根據第8態樣之基板處理裝置,例如操作員可在設定不依存於時間之經過之條件的複數個設定項目與設定依存於時間之經過之條件的複數個設定項目之間,任意地替換設定項目。藉此,例如操作員可使其製作規定所需之條件的配方。其結果,例如操作員可以所需之條件使其執行對基板之處理。因此,例如可於基板處理裝置中容易地執行對於對基板實施之處理的客製。 According to the substrate processing apparatus of the eighth aspect, for example, the operator can arbitrarily switch settings between a plurality of setting items that set conditions that do not depend on the passage of time and a plurality of setting items that set conditions that depend on the passage of time. project. This allows, for example, the operator to create a recipe specifying the required conditions. As a result, for example, the operator can perform processing on the substrate under desired conditions. Thus, for example, customization of the processing performed on the substrate can be easily performed in a substrate processing apparatus.
根據第9態樣之基板處理裝置,例如可對無法設定依存於時間之經過之條件之既定的設定項目,禁止朝向對依存於時間之經過之條件之設定項目的變更。藉此,例如可避免操作員製作會規定無法執行之處理之配方的不良狀況。 According to the substrate processing apparatus of the ninth aspect, for example, a predetermined setting item that cannot be set to a condition that depends on the passage of time can be prohibited from being changed toward a setting item that is a condition that depends on the passage of time. This avoids, for example, the undesirable situation of an operator creating a recipe that specifies a process that cannot be performed.
根據第10態樣之基板處理裝置,例如操作員可在設定不依存於時間之經過之條件的複數個設定項目與設定依存於時間之經過之條件的複數個設定項目之間,效率佳地替換設定項目。 According to the substrate processing apparatus of the tenth aspect, for example, the operator can efficiently switch between a plurality of setting items that set conditions that do not depend on the passage of time and a plurality of setting items that set conditions that depend on the passage of time. Setting items.
根據第11態樣之基板處理裝置,例如操作員可針對包含2個以上之第1設定項目之每個群組,切換以顯示2個以上之第1設定項目之方式展開中之狀態、及以不顯示2個以上之第2設定項目之方式壓縮中之狀態。藉此,例如即便第1區域之複數個第1設定項目的個數增加,操作員亦可於配方輸入畫面上一邊確認第1區域及第2區域之雙方,一邊容易地進行進行配方之製作及編輯的作業。因此,例如可於基板處理裝置中容易地執行對於對基板實施之處理的客製。 According to the substrate processing apparatus of the eleventh aspect, for example, the operator can switch the state of being expanded to display two or more first setting items for each group including two or more first setting items, and The status of method compression for more than 2 second setting items is not displayed. With this, for example, even if the number of first setting items in the first area increases, the operator can easily create and create a recipe while confirming both the first area and the second area on the recipe input screen. Edited assignments. Thus, for example, customization of the processing performed on the substrate can be easily performed in a substrate processing apparatus.
1:投入部 1:Investment Department
2:第1搬送部 2: 1st Transport Department
3:第2搬送部 3: 2nd transport department
4:乾燥處理部 4: Drying processing department
5:第1液體處理部 5: 1st liquid handling department
6:第2液體處理部 6: 2nd liquid processing department
7:配給部 7:Ration Department
8:輸入部 8:Input part
9:輸出部 9:Output department
10:控制部 10:Control Department
10a:畫面製作部 10a: Screen production department
10b:顯示控制部 10b: Display control part
10c:配方製作部 10c:Recipe Production Department
10d:排程製作部 10d: Scheduling Production Department
10e:取得部 10e: Acquisition Department
10f:識認部 10f: Recognition Department
10g:算出部 10g: Calculation part
10h:供給控制部 10h: Supply Control Department
10i:模式切換部 10i: Mode switching unit
11:載置台 11: Loading platform
11m:感測器部 11m: Sensor department
20:儲存部 20:Storage Department
51:洗淨處理部 51: Washing and processing department
52:藥液處理部 52: Chemical liquid processing department
53:副搬送部 53:Deputy Transport Department
71:載置台 71: Loading platform
100:基板處理裝置 100:Substrate processing device
Ab0:按鈕區域 Ab0: button area
Ar0:配方顯示區域 Ar0: recipe display area
Ar1:第1區域
Ar1:
Ar2:第2區域
Ar2:
B2a:內槽 B2a:Inner tank
B2b:外槽 B2b:Outer tank
C1:匣盒 C1: box
CB1:調整槽 CB1: Adjustment slot
CB2:處理槽 CB2: processing tank
Cf1:第1流量控制部 Cf1: 1st flow control department
Cf2:第2流量控制部 Cf2: 2nd flow control unit
CL1:液體循環部 CL1: Liquid circulation department
CL2:液體循環部 CL2: Liquid circulation department
Ct1:冷卻槽 Ct1: cooling tank
Dc1~Dc3:第1顯示要素 Dc1~Dc3: the first display element
EL1:液體排出部 EL1: Liquid discharge part
Em0:彈出式視窗 Em0: pop-up window
Em1:第2錯誤報知要素 Em1: The second error reporting element
En0:處理液供給源 En0: Treatment liquid supply source
Ex0:處理液排出部 Ex0: Processing liquid discharge part
Fl1:過濾器 Fl1: filter
Ht1:第1加熱器 Ht1: 1st heater
Ht2:第2加熱器 Ht2: 2nd heater
LF2:升降器 LF2: Lifter
M1:第1流量計 M1: No. 1 flow meter
M2:第2流量計 M2: 2nd flow meter
Mk1:第1標記 Mk1:1st mark
Mk2:第2標記 Mk2: 2nd mark
Mp1:滑鼠游標 Mp1: Mouse cursor
Pm1:第1泵 Pm1: 1st pump
Pm2:第2泵 Pm2: 2nd pump
Pr0:識別資訊部 Pr0: Identification information department
Pr1:配方輸入部 Pr1:Recipe input part
R1a:配方輸入畫面之一部分 R1a: Part of the recipe input screen
R1b:配方輸入畫面之一部分 R1b: Part of the recipe input screen
R2:配方輸入畫面之一部分 R2: Part of the recipe input screen
SL1:液體供給部 SL1: Liquid supply department
SL1a:第1液體供給部 SL1a: 1st liquid supply part
SL1b:第2液體供給部 SL1b: 2nd liquid supply part
Sc0:配方輸入畫面 Sc0: Recipe input screen
Tb1:第1配管部 Tb1: 1st piping section
Tb2:第2配管部 Tb2: 2nd piping section
Tb3:第3配管部 Tb3: 3rd piping section
Tb4:第4配管部 Tb4: 4th piping section
Tb5:第5配管部 Tb5: 5th piping section
Tb6:第6配管部 Tb6: 6th piping section
Tb7:第7配管部 Tb7: 7th piping section
Tb8:第8配管部 Tb8: 8th piping section
Tg1:液體排出管部 Tg1: Liquid discharge pipe part
V1:第1閥 V1: No. 1 valve
V1a、V1b:數值 V1a, V1b: numerical value
V2:第2閥 V2: 2nd valve
V3:第3閥 V3: The third valve
V4:第4閥 V4: 4th valve
V5:第5閥 V5: 5th valve
V6:第6閥 V6: No. 6 valve
V7:第7閥 V7:The seventh valve
V8:第8閥 V8: No. 8 valve
V9:第9閥 V9: 9th valve
Va1:調整值 Va1:Adjustment value
Va11:第1調整值 Va11: 1st adjustment value
Va12:第2調整值 Va12: 2nd adjustment value
Vs1:基準值 Vs1: base value
W:基板 W: substrate
圖1係表示第1實施形態之基板處理裝置之概略構成的俯視 圖。 FIG. 1 is a plan view showing the schematic structure of the substrate processing apparatus according to the first embodiment. Figure.
圖2係表示第1實施形態之基板處理裝置之功能性構成的方塊圖。 FIG. 2 is a block diagram showing the functional structure of the substrate processing apparatus according to the first embodiment.
圖3係表示藥液處理部之概略構成的圖。 FIG. 3 is a diagram showing the schematic structure of the chemical solution processing unit.
圖4係表示有關由控制部所實現之液體供給處理之功能性構成的方塊圖。 FIG. 4 is a block diagram showing the functional structure of the liquid supply process implemented by the control unit.
圖5(a)及(b)係表示配方輸入畫面之一部分之第1例的圖。 5(a) and (b) are diagrams showing a first example of a part of the recipe input screen.
圖6係表示配方輸入畫面之一部分之第2例的圖。 FIG. 6 is a diagram showing a second example of a part of the recipe input screen.
圖7係表示基板的片數與處理液相對於處理槽之供給量之關係之一例的圖。 FIG. 7 is a diagram showing an example of the relationship between the number of substrates and the supply amount of the processing liquid to the processing tank.
圖8係表示有關處理液朝向處理槽之供給之動作流程之一例的流程圖。 FIG. 8 is a flowchart showing an example of an operation flow related to the supply of the processing liquid to the processing tank.
圖9係表示配方輸入畫面之概略性構成的圖。 FIG. 9 is a diagram showing the schematic structure of the recipe input screen.
圖10係表示配方輸入畫面中配方輸入部之局部之參考例的圖。 FIG. 10 is a diagram showing a reference example of a part of the recipe input section in the recipe input screen.
圖11係表示配方輸入畫面中配方輸入部之局部之一例的圖。 FIG. 11 is a diagram showing an example of a part of the recipe input section in the recipe input screen.
圖12係表示配方輸入畫面中配方輸入部之局部之一例的圖。 FIG. 12 is a diagram showing an example of a part of the recipe input section in the recipe input screen.
圖13係表示配方輸入畫面中配方輸入部之局部之一例的圖。 FIG. 13 is a diagram showing an example of a part of the recipe input section in the recipe input screen.
圖14係表示配方輸入畫面中配方輸入部之局部之一例的圖。 FIG. 14 is a diagram showing an example of a part of the recipe input section in the recipe input screen.
圖15係表示配方輸入畫面中配方輸入部之局部之一例的圖。 FIG. 15 is a diagram showing an example of a part of the recipe input section in the recipe input screen.
圖16係表示配方輸入畫面中配方輸入部之局部之一例的圖。 FIG. 16 is a diagram showing an example of a part of the recipe input section in the recipe input screen.
圖17係表示配方輸入畫面中配方輸入部之局部之一例的圖。 FIG. 17 is a diagram showing an example of a part of the recipe input section in the recipe input screen.
圖18係表示配方輸入畫面中配方輸入部之局部之一例的圖。 FIG. 18 is a diagram showing an example of a part of the recipe input section in the recipe input screen.
圖19係表示配方輸入畫面中配方輸入部之局部之一例的圖。 FIG. 19 is a diagram showing an example of a part of the recipe input section in the recipe input screen.
圖20係表示配方輸入畫面中配方輸入部之局部之一例的圖。 FIG. 20 is a diagram showing an example of a part of the recipe input section in the recipe input screen.
圖21係表示配方輸入畫面中配方輸入部之局部之一例的圖。 FIG. 21 is a diagram showing an example of a part of the recipe input section in the recipe input screen.
圖22係表示配方輸入畫面中配方輸入部之局部之一例的圖。 FIG. 22 is a diagram showing an example of a part of the recipe input section in the recipe input screen.
已知使基板浸漬於被貯存在處理槽之處理液而對基板實施蝕刻等處理之基板處理裝置。於該基板處理裝置中,例如存在有進行使被形成於基板之表面之氮化膜由磷酸水溶液等之處理液所溶出之蝕刻處理的情形。於進行如此之蝕刻處理之處理槽中,每當處理液中自基板所溶出之成分之濃度升高,便必須於某種程度上更換被貯存於處理槽之處理液。尤其,近年來,例如三維NAND之形成等,在進行對1個批次之處理中要溶解之蝕刻對象物的量較過去更多之製程的情形時,更換被貯存於處理液之處理液的量及頻度越來越增大。 There is known a substrate processing apparatus that immerses the substrate in a processing liquid stored in a processing tank and performs processing such as etching on the substrate. In this substrate processing apparatus, for example, there are cases where an etching process is performed in which the nitride film formed on the surface of the substrate is eluted with a processing solution such as a phosphoric acid aqueous solution. In a processing tank for performing such an etching process, whenever the concentration of components eluted from the substrate in the processing liquid increases, the processing liquid stored in the processing tank must be replaced to some extent. In particular, in recent years, such as the formation of three-dimensional NAND, when a process is performed in which the amount of etching objects to be dissolved in one batch is larger than in the past, it is necessary to replace the processing liquid stored in the processing liquid. The volume and frequency are increasing.
然而,基板處理裝置存在有許多具有可對基板並行地進行使用處理液之相同處理之複數個處理槽者。於使用如此之基板處理裝置在複數個處理槽中並行地對基板實施處理時,例如,只要依照規定對基板之處理之相同的配方進行處理,便可減少配方數量之增大以及配方之製作所需要之作業量等。 However, there are many substrate processing apparatuses having a plurality of processing tanks that can perform the same processing using a processing liquid on the substrate in parallel. When such a substrate processing apparatus is used to process substrates in parallel in a plurality of processing tanks, for example, as long as the same recipe for processing the substrate is processed in accordance with regulations, the increase in the number of recipes and the need for recipe production can be reduced. workload, etc.
然而,例如即便於複數個處理槽具有相同之構成之情形時,若在複數個處理槽之間存在某種條件的差異,則即便在複數個處理槽中對基板實施相同之處理,於複數個處理槽之間,處理之結果亦會產生差異。此處,作為會於複數個處理槽之間產生之條件的差異,例如可能有使用年數、配管之狀況、振動或溫度等之外在因素、使用次數以及配置等。尤其,例如上述三維NAND之形成等,在進行對1個批次之處理所溶解之蝕刻對象物的量較過去更多之處 理的情形時,於複數個處理槽之間,在處理之結果容易產生較大之差異。 However, for example, even if a plurality of processing tanks have the same configuration, if there is a certain difference in conditions between the plurality of processing tanks, even if the same processing is performed on the substrate in the plurality of processing tanks, the processing in the plurality of processing tanks will be different. The processing results will also vary between processing tanks. Here, as differences in conditions that may occur between a plurality of treatment tanks, there may be, for example, age of use, condition of piping, external factors such as vibration or temperature, frequency of use, and layout. In particular, for example, in the formation of the above-mentioned three-dimensional NAND, the amount of etching objects dissolved in one batch of processing is larger than in the past. In the case of processing, large differences are likely to occur in the processing results between multiple processing slots.
如此之問題一般與藉由使基板浸漬於被貯存在處理槽之處理液而對基板實施處理之所謂分批式之基板處理裝置共通。 Such problems are generally common to so-called batch-type substrate processing apparatuses that process substrates by immersing the substrates in a processing liquid stored in a processing tank.
因此,本案發明入等發明出可於基板處理裝置中對每個處理槽容易地執行對於對基板實施之處理之客製的技術。 Therefore, the inventors of the present invention have invented a technology that can easily perform customization of the processing performed on the substrate for each processing tank in the substrate processing apparatus.
以下,根據圖式,對本發明之各實施形態進行說明。於圖式中,對具有同樣之構成及功能之部分標示相同的符號,於下述說明中,省略重複之說明。圖式係示意性地加以表示者,各圖中之各種構造之尺寸及位置關係等並非正確地被圖示者。 Hereinafter, each embodiment of the present invention will be described based on the drawings. In the drawings, parts having the same structure and function are designated by the same symbols, and repeated explanations will be omitted in the following description. The drawings are schematically represented, and the dimensions and positional relationships of various structures in each drawing are not accurately illustrated.
<1.第1實施形態> <1. First Embodiment>
<1-1.基板處理裝置之構成> <1-1. Structure of substrate processing equipment>
圖1係表示第1實施形態之基板處理裝置100之概略性構成之一例的俯視圖。圖2係表示第1實施形態之基板處理裝置100之功能性構成之一例的方塊圖。基板處理裝置100例如可對基板W實施藥液處理、洗淨處理及乾燥處理。
FIG. 1 is a plan view showing an example of the schematic configuration of the
如圖1所示,基板處理裝置100例如具備有投入部1、第1搬送部2、第2搬送部3、乾燥處理部4、第1液體處理部5、第2液體處理部6、送出部7、輸入部8、輸出部9、控制部10及儲存部20。
As shown in FIG. 1 , the
投入部1例如係用以將複數片處理前之基板W自基板處理裝置100外朝基板處理裝置100內投入的部分。該投入部1例如具有可分別地載置收納有複數片(例如25片以下)處理前之基
板W之匣盒C1之2個載置台11。於載置台11例如設置有感測器部11m。感測器部11m例如可計測被收納於匣盒C1之基板W的片數。又,感測器部11m例如可檢測匣盒C1中之基板W的配置。此處,感測器部11m例如以匣盒C1內作為對象,朝向下方掃描構成穿透型之紅外線感測器之一對的投光部及受光部,藉此可根據遮住紅外線之次數及位置,來進行被收納於匣盒C1之基板W之片數的計測及基板W之配置的檢測。由感測器部11m所計測之基板W之片數的資訊、及由感測器部11m所檢測出之匣盒C1內之基板W之配置的資訊,例如與匣盒C1之識別資訊一起被儲存於儲存部20。由感測器部11m所計測之基板W之片數的資訊,例如係在控制部10中被利用在用以取得有關在乾燥處理部4、第1液體處理部5及第2液體處理部6成為處理之對象之基板W之處理量的資訊(亦稱為處理量資訊)。亦即,感測器部11m例如可作為用以計測基板W之處理量的部分而發揮功能。
The
送出部7例如係用以將複數片處理後之基板W自基板處理裝置100內朝基板處理裝置100外送出的部分。該送出部7例如以鄰接於投入部1之方式定位。該送出部7例如具有可分別地載置匣盒C1之2個載置台71。於送出部7中,可在將複數片(例如25片以下)處理後之基板W收納於匣盒C1之狀態下,針對每個匣盒C1將複數片處理後之基板W送出至基板處理裝置100之外。
The sending
第1搬送部2例如存在於沿著投入部1及送出部7之位置。該第1搬送部2例如可取出被載置於投入部1之匣盒C1所收納之所有基板W,並對第2搬送部3進行搬送。此時,例如,藉由2個匣盒C1所收納之所有基板W相對於第2搬送部3被搬送,
而形成包含複數片基板W之1個批次的基板群。形成1個批次之基板群的複數片基板W,係作為乾燥處理部4、第1液體處理部5及第2液體處理部6之處理的單位來處理。又,第1搬送部2,例如可自第2搬送部3接收處理後之基板W,並將該處理後之基板W對被載置於送出部7之載置台71上之匣盒C1搬送,而收納於該匣盒C1內。
The
第2搬送部3例如可沿著基板處理裝置100之長度方向移動。沿著第2搬送部3之移動方向,從靠近第1搬送部2之側依序存在有乾燥處理部4、第1液體處理部5及第2液體處理部6。換言之,例如,在鄰接於乾燥處理部4之位置有第1液體處理部5存在,而在鄰接於該第1液體處理部5之位置有第2液體處理部6存在。
The
乾燥處理部4例如可將複數片基板W收納於低壓之腔室內並使其乾燥。
For example, the drying
第1液體處理部5例如具有洗淨處理部51、藥液處理部52、及副搬送部53。洗淨處理部51例如可對複數片基板W實施利用純水進行洗淨之處理(亦稱為純水洗淨處理)。藥液處理部52例如可藉由包含藥液之處理液來對複數片基板W實施處理(亦稱為藥液處理)。副搬送部53例如可在與第2搬送部3之間進行基板W之交接,並且可分別在洗淨處理部51及藥液處理部52升降。
The first
第2液體處理部6例如與第1液體處理部5同樣地,具有洗淨處理部51、藥液處理部52、及副搬送部53。
For example, like the first
輸入部8例如位於載置台11之附近。輸入部8例如可回應作為使用者之操作員的動作而輸入信號。藉此,操作員可進
行各種資訊之選擇或輸入。輸入部8例如由觸控面板等所構成。又,輸入部8例如既可具有包含可進行按下等之各種操作之按鈕等的操作部,亦可具有可進行利用聲響之輸入之麥克風等。操作員例如可經由輸入部8來製作及編輯規定用以對基板W進行處理之順序的配方並使其儲存於儲存部20、或自被儲存於儲存部20之包含複數個配方之配方群,對作為處理對象之複數片基板W指定配方。
The
輸出部9例如位於載置台11之附近。輸出部9例如係可根據控制部10之控制來輸出各種資訊的部分。輸出部9例如包含可將各種資訊可視覺辨識地加以輸出之顯示部。該顯示部例如可根據回應操作員之動作而利用輸入部8所輸入之信號來顯示操作員用以進行配方之製作及編輯的畫面(亦稱為配方輸入畫面)。又,輸出部9亦可包含例如可將各種資訊可聽得見地加以輸出之揚聲器等。利用輸出部9可視覺辨識或可聽得見地加以輸出之各種資訊,例如可包含表示基板處理裝置100之各種狀態的資訊、及表示各種警示音(警報)之資訊。此處,例如,輸入部8及輸出部9之顯示部亦可由具有觸控面板之相同的顯示部所實現。
The
儲存部20例如具有硬碟或快閃記憶體等之儲存各種資訊之非揮發性的儲存媒體。於儲存部20例如預先儲存有排程製作程式及處理程式等各種程式、儲存有包含複數種配方之配方群之資料夾、以及各種資料。各種資料例如包含用以構成配方輸入畫面之資料(亦稱為畫面構成用資料)。畫面構成用資料例如包含有對構成配方之複數個設定項目之顯示及數值等設定條件之輸入所必需的資訊。於畫面構成用資料中,複數個設定項目例如適當地依照類別而被分類。又,畫面構成用資料例如包含有對設定項目容許或禁
止類別之分類之變更的資料。
The
具有上述構成之基板處理裝置100之動作,例如如圖2所示般由控制部10所統括地控制。
The operation of the
控制部10例如具有運算部及記憶體等。運算部例如可應用至少一個作為處理器而發揮作用之中央運算部(CPU)等的電路。記憶體例如可應用隨機存取記憶體(RAM)等之暫時性地儲存資訊之電路。藉由運算部之各種運算而暫時地得到之各種資訊適當儲存於記憶體等。運算部例如藉由讀入並執行被儲存於儲存部20之程式,來實現用以執行利用控制部10所進行之基板處理裝置100之動作之統括性之控制之各種功能性的構成。各種功能性的構成,例如包含基板處理裝置100中製作對複數片基板W進行處理之排程的部分(亦稱為排程製作部)、及按照排程執行對複數片基板W之處理的部分(亦稱為處理執行部)等。又,控制部10例如亦可根據來自藥液處理部52之各種感測器之計測結果,來控制第1液體處理部5及第2液體處理部6之各部的動作。各種感測器例如包含流量計等。
The
<1-2.藥液處理部> <1-2. Chemical solution processing department>
圖3係表示藥液處理部52之概略性之構成的圖。藥液處理部52例如進行如下之處理(亦稱為蝕刻處理):使形成有氧化矽膜及氮化矽膜之基板W浸漬於作為蝕刻液而發揮功能之作為處理液的磷酸水溶液中,藉此選擇性地使氮化矽膜溶解。
FIG. 3 is a diagram showing the schematic structure of the chemical
如圖3所示,藥液處理部52具備有液體供給部SL1、處理槽CB2、液體循環部CL2、及液體排出部EL1。因此,於第1
實施形態中,基板處理裝置100具備有分別具有液體處理部SL1及處理槽CB2之2個藥液處理部52。
As shown in FIG. 3 , the chemical
液體供給部SL1係用以對處理槽CB2供給處理液之部分。液體供給部SL1例如具有調整槽CB1、第1液體供給部SL1a、液體循環部CL1、及第2液體供給部SL1b。 The liquid supply part SL1 is a part for supplying the processing liquid to the processing tank CB2. The liquid supply part SL1 has, for example, an adjustment tank CB1, a first liquid supply part SL1a, a liquid circulation part CL1, and a second liquid supply part SL1b.
調整槽CB1例如係為了進行用以供給至處理槽CB2之磷酸水溶液之溫度的調整等而暫時性地貯存磷酸水溶液之部分。調整槽CB1例如可應用由對磷酸水溶液之耐蝕性優異之石英或氟樹脂材料所形成之具有箱形形狀者。 The adjustment tank CB1 is a part which temporarily stores the phosphoric acid aqueous solution for the purpose of adjusting the temperature of the phosphoric acid aqueous solution supplied to the treatment tank CB2, etc., for example. For example, a box-shaped adjustment tank CB1 made of quartz or a fluororesin material that has excellent corrosion resistance to a phosphoric acid aqueous solution can be used.
第1液體供給部SL1a例如可執行將自處理液供給源En0所輸送之新的處理液經由第1配管部Tb1而供給至調整槽CB1之處理(亦稱為第1液體供給處理)。此處,例如,作為處理液而被供給作為蝕刻液而發揮功能之作為藥液之既定濃度之磷酸水溶液的新液(亦稱為使用前磷酸水溶液)。處理液供給源En0以連通於第1配管部Tb1之第1端部之方式進行連接。該處理液供給源En0例如藉由泵或氣體等自以常溫(例如25℃)而貯存有被設置於基板處理裝置100之內部或外部之磷酸水溶液之槽朝向第1配管部Tb1壓送磷酸水溶液。於第1配管部Tb1設置有第1流量控制部Cf1。第1流量控制部Cf1例如具有開閉第1配管部Tb1之流路的第1閥V1、及計測磷酸水溶液之流量的第1流量計M1。第1配管部Tb1之第2端部例如以連通於調整槽CB1之方式進行連接。此處,第1流量控制部Cf1被連接於控制部10。控制部10根據自第1流量計M1所發送之表示流量之信號,來控制第1閥V1。藉此,於第1液體供給部SL1a中,例如,自處理液供給源En0所供給之磷酸水溶
液通過第1配管部Tb1,以由第1流量控制部Cf1所設定之流量被供給至調整槽CB1。
The first liquid supply unit SL1a may, for example, perform a process of supplying the new processing liquid transported from the processing liquid supply source En0 to the adjustment tank CB1 via the first piping unit Tb1 (also referred to as the first liquid supply process). Here, for example, a new solution (also called a pre-use phosphoric acid aqueous solution) of a phosphoric acid aqueous solution of a predetermined concentration that functions as an etching solution and functions as a chemical solution is supplied as the processing liquid. The processing liquid supply source En0 is connected to the first end portion of the first piping portion Tb1. The processing liquid supply source En0 pressure-feeds the phosphoric acid aqueous solution toward the first piping part Tb1 from a tank in which the phosphoric acid aqueous solution is stored at normal temperature (for example, 25° C.) at normal temperature (for example, 25° C.) by a pump or gas. . The first flow control part Cf1 is provided in the first piping part Tb1. The first flow control unit Cf1 includes, for example, a first valve V1 that opens and closes the flow path of the first piping unit Tb1, and a first flow meter M1 that measures the flow rate of the phosphoric acid aqueous solution. The second end portion of the first piping portion Tb1 is connected to the adjustment groove CB1, for example. Here, the first flow control unit Cf1 is connected to the
液體循環部CL1例如可執行加熱自調整槽CB1所排出之磷酸水溶液並使其再次壓送環流至調整槽CB1之處理(亦稱為第1液體循環處理)。液體循環部CL1例如具有第2配管部Tb2。第2配管部Tb2例如具有以連通於調整槽CB1之方式進行連接的第1端部、及以連通於調整槽CB1之方式進行連接的第2端部。於第2配管部Tb2例如自上游側依序設置有第2閥V2、第1泵Pm1及第1加熱器Ht1。第2閥V2對第2配管部Tb2之流路進行開閉。第1泵Pm1經由第2配管部Tb2將自調整槽CB1所取出之磷酸水溶液朝向調整槽CB1壓送。第1加熱器Ht1將流經第2配管部Tb2之磷酸水溶液加熱至既定之溫度(例如約160℃)。 For example, the liquid circulation unit CL1 can perform a process of heating the phosphoric acid aqueous solution discharged from the adjustment tank CB1 and causing it to circulate under pressure to the adjustment tank CB1 again (also called a first liquid circulation process). The liquid circulation part CL1 has, for example, a second piping part Tb2. The second piping portion Tb2 has, for example, a first end portion connected to the adjustment groove CB1 and a second end portion connected to the adjustment groove CB1. For example, the second valve V2, the first pump Pm1, and the first heater Ht1 are provided in the second piping part Tb2 in this order from the upstream side. The second valve V2 opens and closes the flow path of the second piping part Tb2. The first pump Pm1 pressure-feeds the phosphoric acid aqueous solution taken out from the adjustment tank CB1 toward the adjustment tank CB1 via the second piping part Tb2. The first heater Ht1 heats the phosphoric acid aqueous solution flowing through the second piping part Tb2 to a predetermined temperature (for example, about 160° C.).
第2液體供給部SL1b例如可執行對處理槽CB2供給作為蝕刻液而發揮功能之作為處理液之使用前磷酸水溶液的處理(亦稱為第2液體供給處理)。該第2液體供給部SL1b例如具有作為液體供給管部之第3配管部Tb3,而可將自調整槽CB1所輸送之磷酸水溶液經由第3配管部Tb3供給至處理槽CB2。第3配管部Tb3例如具有以連通於第2配管部Tb2中之第1加熱器Ht1與調整槽CB1之間之局部之方式進行連接的第1端部、及以連通於處理槽CB2之外槽B2b之方式進行連接的第2端部。換言之,第3配管部Tb3係第2配管部Tb2所分支之配管部。於第3配管部Tb3,例如磷酸水溶液藉由第1泵Pm1而自第1端部朝向第2端部被壓送。於第3配管部Tb3設置有第2流量控制部Cf2。第2流量控制部Cf2例如具有相對於第3配管部Tb3自上游側(調整槽CB1側)依序地設
置有第2流量計M2、第3閥V3及第4閥V4之構成。第2流量計M2例如可應用可檢測流經第3配管部Tb3之磷酸水溶液之流量的流量檢測器。第3閥V3例如可應用調整流經第3配管部Tb3之磷酸水溶液之流量的流量控制閥。第4閥V4例如可應用控制第3配管部Tb3之磷酸水溶液之流路之開閉的開閉閥。此處,第2流量控制部Cf2被連接於控制部10。控制部10例如根據自第2流量計M2所發送之表示流量的信號,來控制第3閥V3及第4閥V4。藉此,第2液體供給部SL1b例如可將自調整槽CB1所供給之磷酸水溶液,經由第3配管部Tb3而以由第2流量控制部Cf2所控制之流量供給至處理槽CB2之外槽B2b。
For example, the second liquid supply unit SL1b can perform a process of supplying a pre-use phosphoric acid aqueous solution that functions as an etching liquid to the treatment tank CB2 (also referred to as a second liquid supply process). This second liquid supply part SL1b has, for example, a third piping part Tb3 as a liquid supply pipe part, and can supply the phosphoric acid aqueous solution transported from the adjustment tank CB1 to the treatment tank CB2 via the third piping part Tb3. The third piping part Tb3 has, for example, a first end part connected to a part between the first heater Ht1 and the adjustment tank CB1 in the second piping part Tb2, and a tank connected to the outer tank of the processing tank CB2. The second end of the connection is B2b. In other words, the third piping part Tb3 is a piping part branched from the second piping part Tb2. In the third piping part Tb3, for example, the phosphoric acid aqueous solution is pressure-fed from the first end toward the second end by the first pump Pm1. The second flow control part Cf2 is provided in the third piping part Tb3. The second flow control part Cf2 has, for example, a structure provided sequentially from the upstream side (the adjusting tank CB1 side) with respect to the third piping part Tb3.
It is composed of a second flow meter M2, a third valve V3 and a fourth valve V4. For example, a flow detector capable of detecting the flow rate of the phosphoric acid aqueous solution flowing through the third piping part Tb3 can be applied to the second flow meter M2. For example, a flow control valve that adjusts the flow rate of the phosphoric acid aqueous solution flowing through the third piping part Tb3 can be used as the third valve V3. For example, the fourth valve V4 may be an on-off valve that controls opening and closing of the flow path of the phosphoric acid aqueous solution in the third piping part Tb3. Here, the second flow rate control unit Cf2 is connected to the
再者,液體供給部SL1例如亦可具有不具有第1液體供給部SL1a、調整槽CB1及液體循環部CL1而直接連接有處理液供給源En之與第2液體供給部SL1b相同的構成。於該情形時,例如於第3配管部Tb3之上游側之第1端部直接連接有處理液供給源En。 Furthermore, for example, the liquid supply part SL1 may have the same structure as the second liquid supply part SL1b without the first liquid supply part SL1a, the adjustment tank CB1, and the liquid circulation part CL1 but with the processing liquid supply source En directly connected. In this case, for example, the processing liquid supply source En is directly connected to the first end portion on the upstream side of the third piping portion Tb3.
處理槽CB2例如係用以利用所貯存之處理液對基板W實施處理之部分。於第1實施形態中,處理槽CB2例如係藉由作為蝕刻液而發揮功能之作為處理液的磷酸水溶液進行對基板W之蝕刻處理之部分(亦稱為處理部)。處理槽CB2例如具有由內槽B2a及外槽B2b所構成之二重構造,該內槽B2a貯存作為蝕刻液之磷酸水溶液,使基板W浸漬於磷酸水溶液中,而該外槽B2b回收自該內槽B2a之上部所溢流之磷酸水溶液。內槽B2a例如係由對磷酸水溶液之耐蝕性優異之石英或氟樹脂材料所形成之俯視呈矩形之箱形形狀的部分。於處理槽CB2中可貯存之液體的總量(容量) 例如被設定為60公升左右。外槽B2b例如亦由與內槽B2a相同之材料所形成,且以圍繞內槽B2a之外周上端部之方式存在。 The processing tank CB2 is, for example, a part for processing the substrate W using the stored processing liquid. In the first embodiment, the processing tank CB2 is a part (also referred to as a processing part) that performs an etching process on the substrate W using, for example, a phosphoric acid aqueous solution that functions as an etching solution. The treatment tank CB2 has, for example, a dual structure consisting of an inner tank B2a that stores a phosphoric acid aqueous solution as an etching liquid and the substrate W is immersed in the phosphoric acid aqueous solution, and an outer tank B2b that recovers the phosphoric acid aqueous solution. The phosphoric acid aqueous solution overflowing from the upper part of tank B2a. The inner tank B2a is, for example, a rectangular box-shaped portion in a plan view made of quartz or fluororesin material which is excellent in corrosion resistance to a phosphoric acid aqueous solution. The total amount of liquid that can be stored in treatment tank CB2 (capacity) For example, it is set to about 60 liters. The outer groove B2b is also formed of the same material as the inner groove B2a, for example, and exists so as to surround the outer peripheral upper end of the inner groove B2a.
又,於處理槽CB2設置有用以使基板W浸漬於被貯存於處理槽CB2之磷酸水溶液的升降器LF2。升降器LF2例如藉由3根保持棒一起保持以立起姿勢(基板主面之法線沿著水平方向之姿勢)相互平行地被排列之複數片(例如50片以下)基板W。升降器LF2被設置為可藉由省略圖示之升降機構而沿著鉛直方向升降。該升降器LF2例如使所保持之複數片基板W,在使其等浸漬於內槽B2a內之磷酸水溶液中之處理位置(圖3之位置)與自磷酸水溶液拉起後之交接位置之間升降。於處理槽CB2中,例如可藉由使複數片基板W位於內槽B2a內之處理位置而浸漬於磷酸水溶液中,來進行藉由磷酸水溶液使基板W之氮化矽膜溶解之蝕刻處理。此時,作為構成基板W之成分(亦稱為基板成分)之矽會自基板W溶出至被貯存於內槽B2a之磷酸水溶液。 Furthermore, the processing tank CB2 is provided with a lifter LF2 for immersing the substrate W in the phosphoric acid aqueous solution stored in the processing tank CB2. The lifter LF2 holds a plurality of substrates W (for example, 50 or less) arranged in parallel with each other in an upright posture (the posture in which the normal line of the main surface of the substrate is along the horizontal direction) by using, for example, three holding rods. The lifter LF2 is provided so that it can move up and down in the vertical direction by a lifting mechanism (not shown). The lifter LF2 raises and lowers, for example, the plurality of held substrates W between a processing position (the position in FIG. 3 ) where the substrates W are immersed in the phosphoric acid aqueous solution in the inner tank B2a, and a transfer position after being pulled up from the phosphoric acid aqueous solution. . In the processing tank CB2, for example, a plurality of substrates W are positioned at processing positions in the inner tank B2a and immersed in a phosphoric acid aqueous solution, thereby performing an etching process in which the silicon nitride films of the substrates W are dissolved by the phosphoric acid aqueous solution. At this time, silicon, which is a component constituting the substrate W (also referred to as a substrate component), is eluted from the substrate W into the phosphoric acid aqueous solution stored in the inner tank B2a.
液體循環部CL2例如可執行加熱自處理槽CB2所排出之磷酸水溶液並使其再次壓送環流至處理槽CB2之處理(亦稱為第2液體循環處理)。液體循環部CL2例如具有以將外槽B2b與內槽B2a連通之方式進行連接之第4配管部Tb4。例如,第4配管部Tb4具有:第1端部,其以連通於外槽B2b之底部之方式進行連接;及第2端部,其以連通於內槽B2a之底部之方式進行連接。於第4配管部Tb4自上游側起依序地設置有第5閥V5、第2泵Pm2、第6閥V6、第2加熱器Ht2、及過濾器Fl1。第5閥V5開閉第4配管部Tb4之流路。第2泵Pm2將經由第4配管部Tb4而自外槽B2b所取出之磷酸水溶液朝向內槽B2a壓送。第6閥V6開閉第4配管 部Tb4之流路。第2加熱器Ht2將流經第4配管部Tb4之磷酸水溶液加熱至既定之溫度(例如約160℃)。過濾器Fl1係用以將流經第4配管部Tb4之磷酸水溶液中之異物去除之過濾器。又,液體循環部CL2例如亦可具有加熱自內槽B2a所排出之磷酸水溶液並使其環流至內槽B2a之第5配管部Tb5。於該情形時,例如第5配管部Tb5可採用具有第1端部及第2端部之形態,該第1端部以連通於內槽B2a之方式進行連接,而第2端部以連通於第4配管部Tb4中之第5閥V5與第2泵Pm2之間的部分之方式進行連接。於第5配管部Tb5設置有第7閥V7,該第7閥V7開閉第5配管部Tb5之流路。 For example, the liquid circulation unit CL2 can perform a process of heating the phosphoric acid aqueous solution discharged from the treatment tank CB2 and causing it to circulate under pressure to the treatment tank CB2 again (also called a second liquid circulation process). The liquid circulation part CL2 has, for example, a fourth piping part Tb4 connected so as to communicate the outer tank B2b and the inner tank B2a. For example, the fourth piping part Tb4 has a first end connected to the bottom of the outer tank B2b and a second end connected to the bottom of the inner tank B2a. The fifth valve V5, the second pump Pm2, the sixth valve V6, the second heater Ht2, and the filter F11 are provided in the fourth piping part Tb4 in this order from the upstream side. The fifth valve V5 opens and closes the flow path of the fourth piping part Tb4. The second pump Pm2 pressure-feeds the phosphoric acid aqueous solution taken out from the outer tank B2b via the fourth piping part Tb4 toward the inner tank B2a. 6th valve V6 opening and closing 4th piping The flow path of Part Tb4. The second heater Ht2 heats the phosphoric acid aqueous solution flowing through the fourth piping part Tb4 to a predetermined temperature (for example, about 160° C.). The filter F11 is a filter for removing foreign matter in the phosphoric acid aqueous solution flowing through the fourth piping part Tb4. Moreover, the liquid circulation part CL2 may have the 5th piping part Tb5 which heats the phosphoric acid aqueous solution discharged from the inner tank B2a, and circulates it to the inner tank B2a, for example. In this case, for example, the fifth piping part Tb5 may have a first end connected to the inner groove B2a and a second end connected to the inner groove B2a. The fourth piping part Tb4 is connected between the fifth valve V5 and the second pump Pm2. The fifth piping part Tb5 is provided with a seventh valve V7 that opens and closes the flow path of the fifth piping part Tb5.
液體排出部EL1例如係執行如下之處理(亦稱為液體排出處理)的部分:將於作為處理部之處理槽CB2中對基板W進行蝕刻處理所使用後之作為處理液(亦稱為第1處理液)的磷酸水溶液(亦稱為使用完畢磷酸水溶液或第1磷酸水溶液),自處理槽CB2排出至基板處理裝置100之外。使用完畢磷酸水溶液藉由處理槽CB2中之基板W之蝕刻處理,而處於基板成分(例如矽)所溶解之濃度(亦稱為溶解濃度)較使用前之磷酸水溶液更高之狀態。液體排出部EL1例如具有第6配管部Tb6、第7配管部Tb7、冷卻槽Ct1、及第8配管部Tb8。此處,第6配管部Tb6、第7配管部Tb7及第8配管部Tb8構成用以將使用完畢磷酸水溶液自處理槽CB2排出至基板處理裝置100之外的部分(亦稱為液體排出管部)Tg1。
The liquid discharge part EL1 is, for example, a part that performs a process (also called a liquid discharge process) of using the etching process of the substrate W in the processing tank CB2 as the processing part as a processing liquid (also called a first liquid discharge process). The phosphoric acid aqueous solution (also referred to as the used phosphoric acid aqueous solution or the first phosphoric acid aqueous solution) is discharged from the processing tank CB2 to the outside of the
第6配管部Tb6例如具有以連接於第4配管部Tb4中之第2泵Pm2與第6閥V6之間的部分之方式進行連接之第1端部、及以連通於冷卻槽Ct1之方式進行連接之第2端部。換言之,第6配管部Tb6與第4配管部Tb4一起構成將處理槽CB2與冷卻
槽Ct1加以連接之部分(亦稱為第1部分)。於第6配管部Tb6設置有第8閥V8。第8閥V8開閉第6配管部Tb6之流路。因此,可藉由適當控制第6閥V6及第8閥V8之開閉,而使其選擇性地執行加熱自處理槽CB2所排出之磷酸水溶液並再次壓送環流至處理槽CB2的處理(第2液體循環處理)、及將使用完畢磷酸水溶液自處理槽CB2經由冷卻槽Ct1排出至基板處理裝置100之外的處理(液體排出處理)。
The sixth piping part Tb6 has, for example, a first end part connected to a part between the second pump Pm2 and the sixth valve V6 in the fourth piping part Tb4 and connected to the cooling tank Ct1 Connect the 2nd end. In other words, the sixth piping part Tb6 and the fourth piping part Tb4 together form a connection between the processing tank CB2 and the cooling
The part to which slot Ct1 is connected (also called part 1). The eighth valve V8 is provided in the sixth piping part Tb6. The eighth valve V8 opens and closes the flow path of the sixth piping part Tb6. Therefore, by appropriately controlling the opening and closing of the sixth valve V6 and the eighth valve V8, the phosphoric acid aqueous solution discharged from the treatment tank CB2 can be selectively heated and circulated to the treatment tank CB2 under pressure (the second step). Liquid circulation processing), and processing (liquid discharge processing) of discharging the completed phosphoric acid aqueous solution from the processing tank CB2 to the outside of the
第7配管部Tb7例如具有以連通於處理槽CB2之外槽B2b之上部之方式進行連接的第1端部、及以連通於冷卻槽Ct1之方式進行連接的第2端部。此處,第7配管部Tb7例如在被貯存於處理槽CB2之外槽B2b之磷酸水溶液之貯存量過度增加時,可以磷酸水溶液不會自外槽B2b溢出之方式,將磷酸水溶液自外槽B2b流入至冷卻槽Ct1。 The 7th piping part Tb7 has, for example, a first end part connected to the upper part of the tank B2b outside the processing tank CB2, and a second end part connected to the cooling tank Ct1. Here, for example, when the storage amount of the phosphoric acid aqueous solution stored in the outer tank B2b of the treatment tank CB2 increases excessively, the seventh piping part Tb7 can transfer the phosphoric acid aqueous solution from the outer tank B2b so that the phosphoric acid aqueous solution does not overflow from the outer tank B2b. It flows into cooling tank Ct1.
冷卻槽Ct1可貯存並冷卻使用完畢磷酸水溶液。 The cooling tank Ct1 can store and cool the used phosphoric acid aqueous solution.
第8配管部Tb8例如連接於冷卻槽Ct1,而構成用以將使用完畢磷酸水溶液排出至基板處理裝置100之外的部分。第8配管部Tb8例如具有連接於冷卻槽Ct1之第1端部、及連接於用以將使用完畢磷酸水溶液排出至基板處理裝置100之外之部分(亦稱為處理液排出部)Ex0的第2端部。處理液排出部Ex0例如可應用可相對於基板處理裝置100裝卸之用以回收磷酸水溶液之槽(亦稱為回收槽)、或用以將磷酸水溶液排出之槽(亦稱為排液槽)、或用以連接於工廠排水用之處理設施之排液管等。於第8配管部Tb8例如設置有第9閥V9。第9閥V9可開閉第8配管部Tb8之流路。此處,自冷卻槽Ct1朝向處理液排出部Ex0之磷酸水溶液之排液可藉由第
9閥V9所調整。
The eighth piping portion Tb8 is connected to the cooling tank Ct1, for example, and constitutes a portion for discharging the used phosphoric acid aqueous solution to the outside of the
上述之藥液處理部52之各部的動作,可藉由控制部10進行控制。例如,控制部10可控制藉由第1液體供給部SL1a朝向調整槽CB1供給作為第2處理液之使用前磷酸水溶液之處理(第1液體供給處理)、藉由液體循環部CL1使磷酸水溶液循環之處理(第1液體循環處理)、藉由第2液體供給部SL1b朝向處理槽CB2供給使用前磷酸水溶液之處理(第2液體供給處理)、藉由液體循環部CL2使磷酸水溶液循環之處理(第2液體循環處理)、及將作為第1處理液之使用完畢磷酸水溶液藉由液體排出部EL1自處理槽CB2排出之處理(液體排出處理)。再者,例如亦可為,以沿著內槽B2a之內壁之方式所設置之濃度計,檢測溶出至被貯存於內槽B2a內之磷酸水溶液中之基板W之既定物質之溶解濃度,根據作為該檢測結果之溶解濃度,控制部10開閉第8閥V8及第9閥V9,並將使用完畢磷酸水溶液適當送出至處理液排出部Ex0。
The operations of each component of the above-mentioned chemical
<1-3.處理液之供給之控制> <1-3. Control of supply of treatment liquid>
於藥液處理部52中,例如在處理槽CB2中,於對1個批次之複數片基板W之預處理、主處理及後處理中之至少1個時機,作為處理液之使用前磷酸水溶液被供給至處理槽CB2。
In the chemical
此處,預處理可應用例如如下之處理:於使複數片基板W浸漬於被貯存在處理槽CB2之磷酸水溶液之前,以被貯存於處理槽CB2之磷酸水溶液藉由利用對處理槽CB2之使用前磷酸水溶液之供給及氣泡之導入所進行之起泡處理等而成為適於蝕刻處理之活性狀態之方式來進行準備。主處理可應用例如如下之處理: 於使複數片基板W浸漬於被貯存在處理槽CB2之磷酸水溶液之狀態下對複數片基板W實施蝕刻。後處理可應用例如如下之處理:於主處理結束之後,藉由對處理槽CB2之使用前磷酸水溶液之供給等,來進行為了對作為下一處理對象之1個批次之複數片基板W之處理之執行的準備。 Here, the pretreatment can be applied, for example, by using the phosphoric acid aqueous solution stored in the processing tank CB2 before immersing the plurality of substrates W in the phosphoric acid aqueous solution stored in the processing tank CB2. Preparation is carried out in such a manner that the phosphoric acid aqueous solution is supplied and bubbles are introduced to an active state suitable for the etching process. The main processing can apply, for example, the following processing: The plurality of substrates W are etched while being immersed in the phosphoric acid aqueous solution stored in the treatment tank CB2. The post-processing can be applied to, for example, the following processing: after the main processing is completed, by supplying a pre-use phosphoric acid aqueous solution to the processing tank CB2, etc., a plurality of substrates W of a batch to be processed next are performed. Preparation for execution of processing.
此時,控制部10例如控制藉由第2液體供給部SL1b對處理槽CB2供給作為處理液之使用前磷酸水溶液的第2液體供給處理,藉此控制藉由液體供給部SL1對處理槽CB2供給作為處理液之使用前磷酸水溶液的處理(亦稱為液體供給處理)。該液體供給處理例如可藉由控制部10根據相對於作為處理之對象之1個批次之複數片基板W所指定之配方而被控制。
At this time, the
圖4係表示有關利用控制部10所實現之液體供給處理的功能性之構成之一例的方塊圖。於控制部10中,於運算部一邊將記憶體作為工作區來使用,一邊實現各種功能性的構成。如圖4所示,控制部10作為可實現之功能性的構成,例如具有畫面製作部10a、顯示控制部10b、配方製作部10c、排程製作部10d、取得部10e、識認部10f、算出部10g、供給控制部10h及模式切換部10i。此處,例如,可由控制部10所實現之功能之至少一部分,亦可藉由專用之電子電路來實現。
FIG. 4 is a block diagram showing an example of a functional structure related to the liquid supply process implemented by the
畫面製作部10a例如可製作用以製作或編輯規定有操作員用以對基板W進行處理之順序之配方之畫面(配方輸入畫面)的資訊。例如,畫面製作部10a根據被儲存於儲存部20之畫面構成用資料來製作配方輸入畫面之資訊。
For example, the
顯示控制部10b例如可根據利用畫面製作部10a所製
作之配方輸入畫面之資訊,使輸出部9所包含之顯示部顯示配方輸入畫面。
The
配方製作部10c例如可根據回應操作員之動作而由輸入部8所輸入之信號來製作或編輯配方。此處,例如,可藉由操作員在顯示於顯示部之配方輸入畫面上輸入各種資訊,而在配方製作部10c製作及編輯配方。
The
圖5(a)及圖5(b)係表示規定藥液處理部52中之處理之配方輸入畫面之一部分R1a、R1b之第1例的圖。圖6係表示規定藥液處理部52中之處理之配方輸入畫面之一部分R2之第2例的圖。
5(a) and 5(b) are diagrams showing a first example of parts R1a and R1b of the recipe input screen for specifying processing in the chemical
例如,如圖5(a)所示,針對第1液體處理部5之藥液處理部52,可於配方輸入畫面記述有關基板W之每單位處理量之處理液之供給量的數值V1a,並使配方儲存於儲存部20。又,例如如圖5(b)所示,針對第2液體處理部6之藥液處理部52,可於配方輸入畫面記述有關基板W之每單位處理量之處理液之供給量的數值V1b,並使配方儲存於儲存部20。此處,有關基板W之每單位處理量之處理液之供給量的數值V1a、V1b,例如可應用處理液之體積。
For example, as shown in FIG. 5(a) , for the chemical
如此一來,配方製作部10c便可根據回應操作員之動作而由輸入部8所輸入之信號將關於2個藥液處理部52之各者之有關基板W之每單位處理量之處理液之供給量的數值V1a、V1b記述於配方,而藉此製作或編輯配方。藉此,例如操作員可分別針對2個藥液處理部52之每個處理槽CB2,執行對於對基板W實施之處理的客製。此處,基板W之單位處理量例如包含有由既定之
片數所構成之單位處理片數。既定之片數例如既可為1片,亦可為2片以上之任意之片數。數值V1a、V1b例如可應用表示處理液之體積的值。於圖5(a)之例子中,記述有相對於1片基板W,600ml之處理液之供給量。於圖5(b)之例子中,記述有相對於1片基板W,800ml之處理液之供給量。此處,數值V1a、V1b例如可根據各藥液處理部52之處理槽CB2中對基板W之處理之結果,而由操作員適當地被輸入。藉此,例如,操作員可針對每個藥液處理部52,將有關基板W之每單位處理量之處理液之供給量的數值記述於配方。然後,針對2個藥液處理部52之各者,包含有關基板W之每單位處理量之處理液之供給量的數值V1a、V1b之數值資訊,被儲存於儲存部20。
In this way, the
於圖5(a)及圖5(b)之例子中,雖然關於2個處理槽CB2之數值V1a、V1b被記述於不同的配方,但並不限定於此。例如,包含關於各藥液處理部52之數值V1a、V1b之數值資訊亦可被記述於1個配方。於該情形時,例如,可利用1個配方來針對每個藥液處理部52,將與基板W之處理量對應之量的處理液供給至處理槽CB2。藉此,例如,可依照1個配方,使用2個處理槽CB2並行地對基板W實施處理。
In the examples of FIG. 5(a) and FIG. 5(b) , although the numerical values V1a and V1b of the two processing tanks CB2 are described in different recipes, they are not limited to this. For example, numerical information including numerical values V1a and V1b of each chemical
又,如圖6所示,1個配方所記述之數值資訊,關於基板W之每單位處理量之處理液之供給量,亦可包含對於2個藥液處理部52之基準值Vs1、及對於2個藥液處理部52中之至少1個藥液處理部52之調整值Va1。再者,於圖6所示之配方之一例中,第1液體處理部5之藥液處理部52以記號T2來表示,而第2液體處理部6之藥液處理部52以記號T4來表示。此處,基準值Vs1
例如可應用規定對1個藥液處理部52之基板W之每單位處理量之處理液之供給量之標準的值。調整值Va1例如可應用將基準值Vs1作為基準,來規定應使基板W之每單位處理量之處理液之供給量針對每個藥液處理部52增減之量的值。基準值Vs1及調整值Va1例如可應用處理液之體積。於圖6之例子中,作為基準值Vs1之600ml、作為第1調整值Va11之0ml及作為第2調整值Va12之200ml被記述於1個配方。此處,第1調整值Va11係對於第1液體處理部5之藥液處理部52之調整值,而第2調整值Va12係對於第2液體處理部6之藥液處理部52之調整值。
In addition, as shown in FIG. 6 , the numerical information described in one recipe may also include the reference value Vs1 for the two chemical
排程製作部10d例如可根據對作為處理對象之複數片基板W所指定之配方,來製作時間排程。該時間排程例如規定分別進行利用第1搬送部2所進行之複數片基板W之搬送及利用第2搬送部3所進行之1個批次之複數片基板W之搬送、以及乾燥處理部4、第1液體處理部5及第2液體處理部6對複數片基板W實施之處理等的時機。利用排程製作部10d所製作之時間排程,例如被儲存於記憶體或儲存部20。而且,基板處理裝置100例如可根據利用排程製作部10d所製作之時間排程,來進行各種動作。
For example, the
取得部10e例如可根據感測器部11m之計測結果,來取得成為處理對象之1個批次之基板W的處理量資訊。此處,例如假設藉由被收納於2個匣盒C1之所有基板W相對於第2搬送部3被搬送,而形成有包含複數片基板W之1個批次之基板群的情形。於該情形時,例如被收納於2個匣盒C1之各者之所有的基板W之片數,可根據基於利用感測器部11m所計測之結果而作為1個批次之基板W之處理量資訊來取得。藉此,例如可根據利用基
板處理裝置100所計測之基板W的處理量,針對每個藥液處理部52將與基板W之處理量對應之量的處理液供給至處理槽CB2。其結果,例如可於基板處理裝置100內,針對每個處理槽CB2執行對於對基板W實施之處理的客製。
For example, the
識認部10f例如可識認2個藥液處理部52中之為了對基板W實施處理而使用之1個藥液處理部52。例如,可基於時間排程決定2個藥液處理部52中之搬入1個批次之複數片基板W之藥液處理部52。
The
算出部10g例如可根據對作為處理對象之1個批次之複數片基板W所指定之配方之數值資訊中之有關與利用識認部10f所識認之1個藥液處理部52對應之基板W之每單位處理量之處理液之供給量的數值、及利用取得部10e所取得之處理量資訊,來算出有關供給至1個藥液處理部52之處理槽CB2之處理液之供給量的數值。
For example, the
此處,如圖5(a)及圖5(b)所示般,假設關於2個處理槽CB2之數值V1a、V1b被記述於不同配方之情形。於該情形時,例如在識認部10f已識認第1液體處理部5之藥液處理部52時,作為基板W之單位處理量即每1片之處理液之供給量的600ml乘以作為利用取得部10e所取得之處理量資訊之基板W的片數(50片以下)所得之值,便作為有關供給至1個藥液處理部52之處理槽CB2之處理液之供給量的數值而被算出。於圖5(a)之例子中,顯示有600ml被乘以作為基板W之片數之50片而算出作為有關供給至1個藥液處理部52之處理槽CB2之處理液之供給量的數值之30000ml之狀態。又,例如在識認部10f已識認第2液體處理部6之藥液處
理部52時,作為基板W之單位處理量即每1片之處理液之供給量之800ml乘以作為利用取得部10e所取得之處理量資訊之基板W之片數(50片以下)所得之值,便作為供給至1個藥液處理部52之處理槽CB2之處理液之供給量的數值而被算出。於圖5(b)之例子中,顯示有800ml被乘以作為基板W之片數之50片而算出作為有關供給至1個藥液處理部52之處理槽CB2之處理液之供給量的數值之40000ml之狀態。
Here, as shown in FIGS. 5(a) and 5(b) , it is assumed that the numerical values V1a and V1b of the two processing tanks CB2 are described in different recipes. In this case, for example, when the
供給控制部10h例如可根據利用算出部10g所算出之數值,而於利用識認部10f所識認之1個藥液處理部52中,藉由液體供給部SL1使處理液供給至處理槽CB2。因此,例如可針對每個藥液處理部52,將與基板W之處理量對應之量的處理液供給至處理槽CB2。藉此,例如不易產生處理液使用上的浪費、以及因處理液過度之供給所導致過度之處理等之不良狀況。其結果,例如於基板處理裝置100中,可針對每個處理槽CB2容易地執行對於對基板W實施之處理之客製。因此,例如在基板處理裝置100中,可容易地執行對於對基板W實施之處理的客製。
For example, the
然而,亦可設為算出部10g例如可根據被記述於1個配方之數值資訊中基準值Vs1及與利用識認部10f所識認之1個藥液處理部52對應之調整值Va1、及利用取得部10e所取得之處理量資訊,來算出有關供給至1個藥液處理部52之處理槽CB2之處理液之供給量的數值。於該情形時,例如可藉由於1個配方中變更調整值,而針對每個藥液處理部52使與基板W之處理量對應之量之處理液供給至處理槽CB2。藉此,例如可容易地製作配方。
However, the
此處,如圖6所示,假設基準值Vs1及調整值Va1
被記述於1個配方之情形。於該情形時,例如在識認部10f已識認第1液體處理部5之藥液處理部52時,作為基板W之單位處理量即每1片之處理液之供給量之基準值Vs1之600ml被乘以作為利用取得部10e所取得之處理量資訊之基板W之片數(50片以下)所得之值、與作為基板W之單位處理量即每1片之處理液之供給量之第1調整值Va11之0ml被乘以作為利用取得部10e所取得之處理量資訊之基板W之片數(50片以下)所得之值的和,便作為有關供給至1個藥液處理部52之處理槽CB2之處理液之供給量的數值而被算出。於圖6之例子中,顯示有作為基準值Vs1之600ml被乘以作為基板W之片數之50片所得之值、與作為第1調整值Va11之0ml被乘以作為基板W之片數之50片所得之值的和即30000ml之狀態。又,例如在識認部10f已識認第2液體處理部6之藥液處理部52時,作為基板W之單位處理量即每1片之處理液之供給量之基準值Vs1之600ml被乘以作為利用取得部10e所取得之處理量資訊之基板W之片數(50片以下)所得之值、與作為基板W之單位處理量即每1片之處理液之供給量之第2調整值Va12之200ml被乘以作為利用取得部10e所取得之處理量資訊之基板W之片數(50片以下)所得之值的和,便作為有關供給至1個藥液處理部52之處理槽CB2之處理液之供給量的數值而被算出。
Here, as shown in Fig. 6, it is assumed that the reference value Vs1 and the adjustment value Va1
It is described in one recipe. In this case, for example, when the
圖7係表示基板W之片數與對處理槽CB2之處理液之供給量的關係之一例的圖。於圖7中顯示有按照圖6之配方之一例之基板W之片數與對處理槽CB2之處理液之供給量的關係。更具體而言,於圖7中,關於第1液體處理部5之藥液處理部52中之處理槽CB2之基板W之片數與處理液之供給量之關係以實線L1
所表示,而關於第2液體處理部6之藥液處理部52中之處理槽CB2之基板W之片數與處理液之供給量之關係以單點鏈線L2所表示。此處,例如對於第1液體處理部5之藥液處理部52,由於第1調整值Va11為0ml,因此不會進行處理液之供給量的調整。藉此,對第1液體處理部5之藥液處理部52之處理槽CB2所供給之處理液之供給量,如以實線L1所示般,會成為作為基準值Vs1之600ml乘以作為處理量資訊之基板W之片數所得之量。又,例如對於第2液體處理部6之藥液處理部52,由於第2調整值Va12為200ml,因此作為單位處理量之每1片基板W,會進行增量200ml處理液之處理液之供給量的調整。藉此,對第2液體處理部6之藥液處理部52之處理槽CB2所供給之處理液之供給量,如以單點鏈線L2所示般,會成為藉由將以沿著基準值Vs1之實線L1所示之處理液之供給量加上作為第2調整值Va12之200ml乘以作為處理量資訊之基板W之片數所得之值所調整而得之量。
FIG. 7 is a diagram showing an example of the relationship between the number of substrates W and the supply amount of the processing liquid to the processing tank CB2. FIG. 7 shows the relationship between the number of substrates W and the supply amount of the processing liquid to the processing tank CB2 according to an example of the recipe of FIG. 6 . More specifically, in FIG. 7 , the relationship between the number of substrates W in the processing tank CB2 in the chemical
模式切換部10i例如可根據回應操作員之動作而由輸入部8所輸入之信號,在第1液體供給模式與第2液體供給模式之間切換模式。此處,第1液體供給模式係如上所述之針對每個藥液處理部52將與處理量對應之量之處理液供給至處理槽CB2之模式。具體而言,於第1液體供給模式中例如可應用如下之模式:算出部10g根據被記述於配方之數值資訊中之與利用識認部10f所識認之1個藥液處理部52對應之有關基板W之每單位處理量之處理液之供給量的數值、及利用取得部10e所取得之處理量資訊,來算出有關供給至利用識認部10f識認之1個藥液處理部52之處理槽CB2之處理液之供給量的數值,且供給控制部10h根據利用算出部
10g所算出之數值,而於利用識認部10f所識認之1個藥液處理部52中,藉由液體供給部SL1使處理液供給至處理槽CB2。第2液體供給模式係無關於2個藥液處理部52而將既定量之處理液供給至處理槽CB2之模式。具體而言,第2液體供給模式例如可應用如下之模式:控制部10藉由液體供給部SL1使預先所設定之既定量之處理液供給至利用識認部10f所識認之1個藥液處理部52之處理槽CB2。
The mode switching unit 10i can switch the mode between the first liquid supply mode and the second liquid supply mode based on a signal input from the
若可進行如此之模式的切換,例如於每個處理槽CB2對基板W之處理之結果未產生差異之情形等時,便可藉由設定為第2液體供給模式,而省略每個藥液處理部52之有關基板W之每單位處理量之處理液之供給量的數值之設定。藉此,例如可減少藉由配方之製作及編輯等來設定處理之條件之操作員的作業量。
If such mode switching is possible, for example, when there is no difference in the processing results of the substrate W in each processing tank CB2, each chemical liquid processing can be omitted by setting to the second liquid supply mode.
<1-4.有關處理液朝向處理槽之供給的動作> <1-4. Operation regarding supply of treatment liquid to treatment tank>
圖8係表示有關處理液朝向處理槽CB2之供給的動作流程之一例的流程圖。有關處理液朝向處理槽CB2之供給的動作例如亦包含關配方之製作及編輯的動作。本動作流程,例如藉由控制部10控制基板處理裝置100之各部的動作所實現。此處,例如藉由進行圖8之步驟S1~S10之處理,來執行有關處理液朝向處理槽CB2之供給的動作。
FIG. 8 is a flowchart showing an example of an operation flow regarding supply of the processing liquid to the processing tank CB2. The operation regarding the supply of the processing liquid to the processing tank CB2 also includes, for example, the operation regarding creation and editing of the recipe. This operation flow is realized, for example, by the
於步驟S1中,控制部10判定是否開始進行配方之製作及編輯。此處,例如若用以顯示配方輸入畫面之信號未回應操作員之動作而藉由輸入部8所輸入,便前進至步驟S5,若用以顯示配方輸入畫面之信號回應操作員之動作而藉由輸入部8所輸入,便前
進至步驟S2。
In step S1, the
於步驟S2中,顯示控制部10b根據利用畫面製作部10a所製作之配方輸入畫面之資訊,使配方輸入畫面顯示於輸出部9包含之顯示部。
In step S2, the
於步驟S3中,配方製作部10c根據回應操作員之動作而藉由輸入部8所輸入之信號,來受理配方輸入畫面上之資訊之記述等資訊的輸入。此時,例如對於第1液體處理部5及第2液體處理部6中之2個藥液處理部52之各者,有關基板W之每單位處理量之處理液之供給量的數值資訊得以被輸入。
In step S3, the
於步驟S4中,控制部10判定是否結束配方之製作及編輯。此處,例如若用以結束配方之製作及編輯之信號未回應操作員之動作而藉由輸入部8所輸入,便返回步驟S3,若用以結束配方之製作及編輯之信號回應操作員之動作而藉由輸入部8所輸入,便前進至步驟S5。
In step S4, the
於步驟S5中,控制部10使在配方輸入畫面上所製作及編輯之配方儲存於儲存部20。藉此,例如關於第1液體處理部5及第2液體處理部6中之2個藥液處理部52之各者,有關基板W之每單位處理量之處理液之供給量的數值資訊被儲存於儲存部20。
In step S5, the
於步驟S6中,控制部10判定是否為在藥液處理部52要開始進行藥液處理之時機。此處,控制部10例如可根據時間排程來判定是否為開始進行藥液處理之時機,而該時間排程利用排程製作部10d並根據對作為處理對象之複數片基板W所指定之配方所製作且被儲存於儲存部20等。此處,若並非開始藥液處理部52中之藥液處理之時機,便返回步驟S1。另一方面,若為開始進
行藥液處理部52之藥液處理之時機,便前進至步驟S7。此時,對作為處理之對象之1個批次之複數片基板W所指定之配方可被識認。
In step S6, the
於步驟S7中,取得部10e取得作為藥液處理部52中之成為處理之對象之基板W的處理量之1個批次之基板W的片數。
In step S7, the
於步驟S8中,識認部10f識認第1液體處理部5及第2液體處理部6之2個藥液處理部52中用以對基板W實施處理之1個藥液處理部52。此處,識認部10f例如可識認根據時間排程等而使用之1個處理槽CB2。
In step S8, the
於步驟S9中,算出部10g根據被記述於對作為處理之對象之1個批次之複數片基板W所指定之配方之數值資訊中之與在步驟S8所識認之1個藥液處理部52對應之有關每單位處理量之處理液之供給量的數值、及在步驟S7取得之作為處理量之1個批次之基板W之片數,來算出有關供給至1個藥液處理部52之處理槽CB2之處理液之供給量的數值。
In step S9 , the
於步驟S10中,供給控制部10h根據在步驟S9所算出之數值,於在步驟S8所識認之1個藥液處理部52中藉由液體供給部SL1使處理液供給至處理槽CB2。
In step S10, the
藉由如此之動作,例如可針對每個藥液處理部52,將與基板W之處理量對應之量之處理液供給至處理槽CB2。藉此,例如不易產生處理液使用上的浪費、以及因處理液之過度之供給所導致過度之處理等的不良狀況。其結果,例如可於基板處理裝置100,針對每個處理槽CB2容易地執行對於對基板W實施之處理的客製。因此,例如可於基板處理裝置100容易地執行對於對基板W
實施之處理的客製。
By operating in this manner, for example, an amount of the processing liquid corresponding to the processing amount of the substrate W can be supplied to the processing tank CB2 for each chemical
<1-5.配方輸入畫面之顯示態樣> <1-5. Display mode of recipe input screen>
圖9係表示配方輸入畫面Sc0之概略性之構成的圖。圖10係表示配方輸入畫面Sc0中之配方輸入部Pr1之局部之參考例的圖。圖11至圖22分別係表示配方輸入畫面Sc0中之配方輸入部Pr1之局部之一例的圖。 FIG. 9 is a diagram showing the schematic structure of the recipe input screen Sc0. FIG. 10 is a diagram showing a reference example of a part of the recipe input portion Pr1 in the recipe input screen Sc0. 11 to 22 are diagrams each showing a partial example of the recipe input portion Pr1 in the recipe input screen Sc0.
如圖9所示,配方輸入畫面Sc0例如具有顯示有關於配方之資訊的區域(亦稱為配方顯示區域)Ar0、及供用以輸入各種指令之按鈕排列的區域(亦稱為按鈕區域)Ab0。配方顯示區域Ar0例如包含顯示有關於配方之各種識別資訊等的部分(亦稱為識別資訊部)Pr0、以及顯示及輸入有配方之設定項目及對各設定項目之設定條件(數值等)的部分(亦稱為配方輸入部)Pr1。 As shown in FIG. 9 , the recipe input screen Sc0 has, for example, an area Ar0 that displays information about the recipe (also called a recipe display area), and an area where buttons are arranged for inputting various instructions (also called a button area) Ab0 . The recipe display area Ar0 includes, for example, a portion (also called an identification information portion) Pr0 for displaying various identification information about the recipe, and a portion for displaying and inputting setting items of the recipe and setting conditions (numeric values, etc.) for each setting item. (Also known as the recipe input section) Pr1.
此處,如圖10所示,配方輸入部Pr1例如包含位於上部之第1區域Ar1、及位於下部之第2區域Ar2。第1區域Ar1例如係對關於在依照配方所執行之處理中不依存於時間之經過之條件之複數個設定項目(亦稱為第1設定項目或頭(header)項目)之各者記述條件的區域(亦稱為頭區域)。第2區域Ar2例如係對關於在依照配方所執行之處理中依存於時間之經過之條件之複數個設定項目(亦稱為第2設定項目或步驟(step)項目)之各者記述條件的區域(亦稱為步驟區域)。複數個第1設定項目例如可包含升降器LF2之升降速度、基板W之蝕刻量、在處理槽CB2中處理液之處理之條件、及起泡之有無等的項目。複數個第2設定項目例如可包含伴隨著時間之經過而變化之藥液朝向處理槽CB2之供給量等的項目。 Here, as shown in FIG. 10 , the recipe input part Pr1 includes, for example, a first area Ar1 located in the upper part and a second area Ar2 located in the lower part. The first area Ar1 describes conditions for each of a plurality of setting items (also called first setting items or header items) that do not depend on the passage of time in processing executed according to the recipe, for example. area (also called the header area). The second area Ar2 is, for example, an area describing conditions for each of a plurality of setting items (also referred to as second setting items or step items) that depend on the passage of time in processing executed according to the recipe. (Also known as step area). The plurality of first setting items may include, for example, items such as the lifting speed of the lifter LF2, the etching amount of the substrate W, the processing conditions of the processing liquid in the processing tank CB2, and the presence or absence of bubbling. The plurality of second setting items may include, for example, items such as the supply amount of the chemical solution to the treatment tank CB2 that changes with the passage of time.
然後,例如操作員可於配方輸入畫面Sc0上一邊確認第1區域Ar1及第2區域Ar2之雙方一邊繼續做進行配方之製作及編輯之作業。然後,配方製作部10c例如可根據回應操作員之動作而由輸入部8所輸入之信號,並根據在配方輸入畫面Sc0中對各第1設定項目所記述之條件、及在配方輸入畫面Sc0中對各第2設定項目所記述之條件,來製作或編輯配方。
Then, for example, the operator can continue to create and edit the recipe while confirming both the first area Ar1 and the second area Ar2 on the recipe input screen Sc0. Then, the
<1-5-1.配方輸入畫面中之項目之展開及壓縮> <1-5-1. Expansion and compression of items in the recipe input screen>
然而,近年來,例如存在有對於對基板W實施之處理會被要求較多細微之要求的傾向。藉此,存在有第1區域Ar1中第1設定項目之個數會增加的傾向。例如,於對被貯存於處理槽CB2之處理液實施使用氮氣之起泡之情形時,存在有會進行為了實施起泡之氣體管之根數的增加及每個氣體管個別之氣體吐出的有無等個別之設定的情形。於該情形時,第1區域Ar1中之關於起泡之第1設定項目的個數可能會增加。尤其,近年來例如亦存在有在用以進行三維NAND之形成等之配方中,應詳細地設定處理條件之項目會增加,且第1區域Ar1中之第1設定項目之個數會明顯地增加之傾向。 However, in recent years, for example, there is a tendency that more detailed requirements are required for the processing performed on the substrate W. As a result, the number of first setting items in the first area Ar1 tends to increase. For example, when bubbling the treatment liquid stored in the treatment tank CB2 using nitrogen gas, there is a possibility of increasing the number of gas tubes for bubbling and discharging gas individually for each gas tube. Wait for individual settings. In this case, the number of first setting items related to bubbling in the first area Ar1 may increase. In particular, in recent years, for example, in recipes for forming three-dimensional NAND, the number of items that should be set in detail for processing conditions has increased, and the number of first setting items in the first area Ar1 has significantly increased. tendency.
然而,例如隨著如此之第1區域Ar1中之第1設定項目之個數的增加,於配方輸入畫面Sc0中第1區域Ar1所占之比率可能會增大。此時,於配方輸入畫面Sc0中,為了使第1區域Ar1與第2區域Ar2同時地顯示,例如雖然可考慮在配方輸入畫面Sc0中減小文字等的方法,但配方輸入畫面Sc0之視覺辨視性會變差。其結果,例如進行配方之製作及變更之作業逐漸地越變越難。 However, for example, as the number of the first setting items in the first area Ar1 increases, the proportion of the first area Ar1 in the recipe input screen Sc0 may increase. At this time, in order to display the first area Ar1 and the second area Ar2 simultaneously in the recipe input screen Sc0, for example, it is possible to consider reducing the text size in the recipe input screen Sc0, but the visual recognition of the recipe input screen Sc0 is limited. Sex will get worse. As a result, operations such as creating and changing recipes gradually become more and more difficult.
因此,於第1實施形態中,例如如圖11至圖13所示
般,於第1區域Ar1,可將複數個第1設定項目分為複數個群組,並針對每個群組切換複數個第1設定項目之顯示及不顯示。如此之第1區域Ar1之顯示態樣,例如可藉由被儲存於儲存部20之畫面構成用資料所實現。
Therefore, in the first embodiment, for example, as shown in FIGS. 11 to 13
Generally, in the first area Ar1, the plurality of first setting items can be divided into a plurality of groups, and the display and non-display of the plurality of first setting items can be switched for each group. Such a display mode of the first area Ar1 can be realized by, for example, the screen configuration data stored in the
此處,例如如圖11所示般,在第1區域Ar1設置分別包含有關複數個第1設定項目中之2個以上之第1設定項目之複數個項目群(亦稱為第1設定項目群)之各者之群組名的顯示要素(亦稱為第1顯示要素)Dc1~Dc3。如此之第1顯示要素Dc1~Dc3可藉由被儲存於儲存部20之畫面構成用資料所規定。於圖11之例子中,在第1區域Ar1,複數個第1設定項目被分類為關於有關升降器LF2之升降速度的第1設定項目之群組(亦稱為第1群組)、關於有關處理槽CB2中之處理液之處理條件的第1設定項目之群組(亦稱為第2群組)、及關於其他第1設定項目之群組(亦稱為第3群組)。於第1區域Ar1例如顯示有有關第1群組之群組名之第1顯示要素Dc1、有關第2群組之群組名之第1顯示要素Dc2、及有關第3群組之群組名之第1顯示要素Dc3。
Here, for example, as shown in FIG. 11 , a plurality of item groups each including two or more first setting items among the plurality of first setting items (also referred to as a first setting item group) are provided in the first area Ar1 ) are the display elements (also called the first display elements) Dc1 to Dc3 of each group name. Such first display elements Dc1 to Dc3 can be specified by the screen configuration data stored in the
而且,例如被構成為藉由畫面製作部10a,根據回應操作員之動作而由輸入部8所輸入之信號,而在被顯示於輸出部9所包含之顯示部之配方輸入畫面Sc0中,可將複數個第1設定項目群中之1個第1設定項目群所包含之2個以上之第1設定項目之顯示狀態,在進行顯示之狀態(亦稱為展開狀態)與不進行顯示之狀態(壓縮狀態)之間進行切換。若採用如此之構成,例如,操作員便可針對包含2個以上之第1設定項目之每個群組,切換展開為顯示2個以上之第1設定項目之狀態、及壓縮為不顯示2個以上之第1設
定項目之狀態。藉此,例如即便第1區域Ar1中之複數個第1設定項目之個數增加,操作員亦可於配方輸入畫面Sc0上一邊確認第1區域Ar1及第2區域Ar2之雙方,一邊容易地進行進行配方之製作及編輯的作業。因此,例如可於基板處理裝置100中容易地執行對於對基板W實施之處理的客製。
Furthermore, for example, the
此處,例如可採用如下之構成:藉由根據回應操作員之動作而由輸入部8所輸入之信號來進行對各第1顯示要素Dc1~Dc3之各種操作,第1~3組之各者之2個以上之第1設定項目之顯示狀態可在展開狀態與壓縮狀態之間進行切換。具體而言,例如可為如下之態樣:於如圖11所示般,第1群組之2個以上之第1設定項目之顯示狀態處於壓縮狀態時,若第1顯示要素Dc1由滑鼠游標Mp1所點擊,如圖12所示般,第1群組之2個以上之第1設定項目之顯示狀態便會自壓縮狀態變化為展開狀態。另一方面,例如可為如下之態樣:於如圖12所示般,第1群組之2個以上之第1設定項目之顯示狀態處於展開狀態時,若第1顯示要素Dc1由滑鼠游標Mp1所點擊,如圖11所示般,第1群組之2個以上之第1設定項目之顯示狀態便會自展開狀態變化為壓縮狀態。又,可為如下之態樣:於如圖11所示般,第2群組之2個以上之第1設定項目之顯示狀態處於壓縮狀態時,若第1顯示要素Dc2由滑鼠游標Mp1所點擊,如圖13所示般,第2群組之2個以上之第1設定項目之顯示狀態便會自壓縮狀態變化為展開狀態。另一方面,例如可為如下之態樣:於如圖13所示般,第2群組之2個以上之第1設定項目之顯示狀態處於展開狀態時,若第1顯示要素Dc2由滑鼠游標Mp1所點擊,如圖11所示般,第2群組之2個以上之第1設定項
目之顯示狀態便會自展開狀態變化為壓縮狀態。又,例如可為如下之態樣:於如圖11所示般,第3群組之2個以上之第1設定項目之顯示狀態處於壓縮狀態時,若第1顯示要素Dc3由滑鼠游標Mp1所點擊,雖省略圖示但第3群組之2個以上之第1設定項目之顯示狀態便會自壓縮狀態變化為展開狀態。另一方面,可為如下之態樣:於第3群組之2個以上之第1設定項目之顯示狀態處於展開狀態時,若第1顯示要素Dc3由滑鼠游標Mp1所點擊,如圖11所示般,第3群組之2個以上之第1設定項目之顯示狀態便會自展開狀態變化為壓縮狀態。
Here, for example, a configuration may be adopted in which various operations on the first display elements Dc1 to Dc3 are performed based on signals input from the
此處,例如如圖11至圖13所示般,若複數個第1顯示要素Dc1~Dc3之各者以可與複數個第1設定項目可視覺辨識性地加以區別之態樣所顯示,操作員之作業性便可提升。具體而言,可為如下之態樣:複數個第1顯示要素Dc1~Dc3之各者使用與複數個第1設定項目之顯示要素不同的顏色等所顯示。又,例如如圖11至圖13所示般,亦可對複數個第1顯示要素Dc1~Dc3之各者,標示表示壓縮狀態之第1標記Mk1或表示展開狀態之第2標記Mk2。此處,例如如圖13所示般,作為設定條件而被記述為0之複數個第1設定項目,對於其複數個第1設定項目,處於在藥液處理中未被使用之狀態。因此,例如作為設定條件而被記述為0之第1設定項目、及作為設定條件而被記述為0以外之第1設定項目,亦可以顏色區分等能夠可視覺辨識性地加以區別之態樣來顯示。 Here, for example, as shown in FIGS. 11 to 13 , if each of the plurality of first display elements Dc1 to Dc3 is displayed in a manner that can be visually distinguished from the plurality of first setting items, the operation The workability of employees can be improved. Specifically, it may be an aspect in which each of the plurality of first display elements Dc1 to Dc3 is displayed using a different color from the display elements of the plurality of first setting items. Furthermore, for example, as shown in FIGS. 11 to 13 , each of the plurality of first display elements Dc1 to Dc3 may be marked with a first mark Mk1 indicating a compressed state or a second mark Mk2 indicating an expanded state. Here, for example, as shown in FIG. 13 , the plurality of first setting items described as 0 as the setting conditions are in a state that is not used in the chemical solution processing. Therefore, for example, the first setting item described as 0 as the setting condition and the first setting item described as other than 0 as the setting condition may be distinguished visually such as by color. display.
又,此處,例如,亦可採用如下之構成:根據回應操作員之動作而由輸入部8所輸入之信號,藉由畫面製作部10a而對各第1顯示要素Dc1~Dc3標示某種資訊。例如,如圖14所示般,
既可對各個第1顯示要素Dc1~Dc3標示群組所包含之第1設定項目之個數,亦可標示分組的理由等。
Furthermore, here, for example, a configuration may be adopted in which the
然而,於配方輸入畫面Sc0中,例如藉由按鈕區域Ab0所包含之用以保存配方之按鈕由滑鼠游標Mp1所按下,被記述於有關配方顯示區域Ar0之配方的資料夾便會藉由配方製作部10c被儲存於儲存部20。此處,例如亦可為在將有關配方的資料夾保存於儲存部20時,配方製作部10c檢查是否存在有記述有錯誤之設定條件之設定項目(亦稱為錯誤項目),且畫面製作部10a使用以報知有設定上之錯誤產生之要素(亦稱為第1錯誤報知要素)顯示於配方輸入畫面上配方輸入畫面上。此處,作為錯誤之設定條件之記述,例如可為相對於升降器LF2之速度之設定項目超過與處理液之種類對應之上限值之值的記述、以及酸及鹼之同時投入等。作為第1錯誤報知要素之顯示,例如如圖15及圖16所示般,可列舉通知錯誤之彈出式視窗Em0的顯示、錯誤項目之顏色區分等能夠可視覺辨識性地加以識認之態樣下的顯示、以及錯誤項目所屬之群組之第1顯示要素Dc1之顏色區分等能夠可視覺辨識性地加以識認之態樣下的顯示等。
However, in the recipe input screen Sc0, for example, by pressing the button for saving the recipe included in the button area Ab0 with the mouse cursor Mp1, the folder of the recipe described in the relevant recipe display area Ar0 will be The
<1-5-2.配方輸入畫面中之項目之移動> <1-5-2. Moving items in the recipe input screen>
然而,例如,每個使用者對於對基板W實施之處理之高精度化的要求會不同。例如,於開發使用基板W之商品的階段,欲使對基板W實施之處理細微地變化來進行測試之需求很高。於如此之情形時,可能會產生例如如下之要求:欲將關於在依照配方所執行之處理中不依存於時間之經過之條件的第1設定項目(頭項目)變 更為關於在依照配方所執行之處理中依存於時間之經過之條件的第2設定項目(步驟項目)。另一方面,例如即便於開發使用基板W之商品的階段,亦存在有會產生欲將第2設定項目(步驟項目)變更為第1設定項目(頭項目)之要求的情形。又,例如於對欲使用基板W之商品進行量產之階段,可能會產生成為每天相同之設定條件之設定項目會增加,而欲將第2項目(步驟項目)變更為第1項目(頭項目)之要求。 However, for example, each user may have different requirements for high precision in the processing performed on the substrate W. For example, in the development stage of products using the substrate W, there is a high demand for testing by slightly changing the processing performed on the substrate W. In such a situation, there may be a request, for example, to change the first setting item (header item) regarding the condition that does not depend on the passage of time in the processing executed according to the recipe. Furthermore, there is a second setting item (step item) regarding conditions that depend on the passage of time in processing executed according to the recipe. On the other hand, for example, even in the development stage of a product using the substrate W, there may be a request to change the second setting item (step item) to the first setting item (head item). Also, for example, in the stage of mass production of a product using the substrate W, there may be an increase in the number of setting items that have the same setting conditions every day, and the second item (step item) may be changed to the first item (head item). ) requirements.
然而,若為了回應所有如此相反之要求,而針對每個使用者客製基板處理裝置100之配方輸入畫面Sc0並加以出貨,便會導致基板處理裝置100之製造及出貨步驟之顯著的繁雜化。又,即便假設能針對每個使用者客製基板處理裝置100之配方輸入畫面Sc0並加以出貨,仍無法完全對應所有與基板處理裝置100之使用狀況對應之要求的變化。
However, in order to respond to all such contrary requirements, if the recipe input screen Sc0 of the
因此,於第1實施形態中,例如如圖17至圖22所示般,於配方輸入畫面Sc0中,可在第1區域(頭區域)Ar1與第2區域(步驟區域)Ar2之間進行設定項目之移動。 Therefore, in the first embodiment, for example, as shown in FIGS. 17 to 22 , in the recipe input screen Sc0 , settings can be made between the first area (head area) Ar1 and the second area (step area) Ar2 Movement of items.
此處,例如畫面製作部10a可根據回應操作員之動作而由輸入部8所輸入之信號,在配方輸入畫面Sc0中將第1區域Ar1之複數個第1設定項目中之1個以上之第1設定項目,變更為第2區域Ar2之複數個第2設定項目中之1個以上之第2設定項目。又,例如畫面製作部10a可根據回應操作員之動作而由輸入部8所輸入之信號,在配方輸入畫面Sc0中將第2區域Ar2之複數個第2設定項目中之1個以上之第2設定項目,以包含於第1區域Ar1之複數個第1設定項目之方式變更為1個以上之第1設定項目。若採
用如此之構成,例如操作員便可於複數個第1設定項目與複數個第2設定項目之間任意地替換設定項目。藉此,例如,操作員可製作規定所需之條件之配方。其結果,例如操作員可於基板處理裝置100中使其以所需之條件執行對基板W之處理。因此,例如可於基板處理裝置100中容易地執行對於對基板W實施之處理的客製。
Here, for example, the
例如,可為如下之態樣:如圖17所示般,於配方輸入畫面Sc0中,藉由在將滑鼠游標Mp1對準並按下滑鼠左鍵之狀態下使被顯示於第1區域Ar1之複數個第1設定項目中之1個第1設定項目移動之拖拽操作、及解除滑鼠之左鍵之按下之放置(drop)操作,而如圖18所示般,使其移動至第2區域Ar2而使其成為第2設定項目。另一方面,例如可為如下之態樣:如圖19所示般,於配方輸入畫面Sc0中,藉由在將滑鼠游標Mp1對準並按下滑鼠之左鍵之狀態下使被顯示於第2區域Ar2之複數個第2設定項目中之1個第2設定項目移動之拖拽操作、及解除滑鼠左鍵之按下之放置操作,而如圖20所示般,使其移動至第1區域Ar1而使其成為第1設定項目。 For example, as shown in FIG. 17 , in the recipe input screen Sc0 , the mouse cursor Mp1 is aligned with and the left mouse button is pressed, so that the first area Ar1 is displayed. The drag operation to move one of the plurality of first setting items and the drop operation of releasing the left button of the mouse move it to the position as shown in Figure 18 The second area Ar2 becomes the second setting item. On the other hand, for example, as shown in FIG. 19 , in the recipe input screen Sc0 , the mouse cursor Mp1 is aligned with the mouse cursor Mp1 and the left button of the mouse is pressed. One of the plurality of second setting items in the second area Ar2 is moved by a drag operation and a placing operation by releasing the left button of the mouse, as shown in Fig. 20 . The first area Ar1 becomes the first setting item.
又,例如亦可採用如下之態樣:如圖17所示般,於配方輸入畫面Sc0中,將滑鼠游標Mp1對準被顯示於第1區域Ar1之複數個第1設定項目中之1個第1設定項目並進行左鍵點擊,藉此使該1個第1設定項目如圖18所示般移動至第2區域Ar2,而使其成為第2設定項目。又,例如亦可採用如下之態樣:如圖19所示般,於配方輸入畫面Sc0中,將滑鼠游標Mp1對準被顯示於第2區域Ar2之複數個第2設定項目中之1個第2設定項目並進行左鍵點擊,藉此使該1個第2設定項目如圖20所示般移動至第1區域 Ar1,而使其成為第1設定項目。 Furthermore, for example, as shown in FIG. 17 , in the recipe input screen Sc0 , the mouse cursor Mp1 is aligned with one of the plurality of first setting items displayed in the first area Ar1 By left-clicking the first setting item, the first setting item is moved to the second area Ar2 as shown in FIG. 18 and becomes the second setting item. Furthermore, for example, as shown in FIG. 19 , in the recipe input screen Sc0 , the mouse cursor Mp1 is aligned with one of the plurality of second setting items displayed in the second area Ar2 and left-clicking the second setting item to move the second setting item to the first area as shown in Figure 20 Ar1, and make it the first setting item.
此處,例如畫面製作部10a亦可禁止將第1區域Ar1之複數個第1設定項目中之預先所設定之既定之1個以上之第1設定項目,以包含於第2區域Ar2之複數個第2設定項目之方式變更為1個以上之第2設定項目。禁止自第1設定項目變更為第2設定項目之規則,例如可藉由被儲存於儲存部20之畫面構成用資料所規定。此處,例如在無法根據時間之經過來變更被貯存於處理槽CB2之處理液使用氮氣之起泡之條件之情形或無法分別對複數個氣體管之各者進行個別之設定之情形時,有關起泡的第1設定項目可被設定為既定之1個以上之第1設定項目。若採用如此之構成,例如可對於無法設定依存於時間之經過之條件之既定之第1設定項目,禁止朝向關於依存於時間之經過之條件之第2設定項目之變更。藉此,例如可避免操作員製作規定無法執行之處理之配方的不良狀況。
Here, for example, the
又,此處,例如畫面製作部10a在根據回應操作員之動作而由輸入部8所輸入之信號而在配方輸入畫面Sc0中進行將既定之1個以上之第1設定項目變更為第2設定項目之操作之情形時,如圖21所示般,於配方輸入畫面上,顯示用以報知錯誤之項目之移動被指定之情形的要素(亦稱為第2錯誤報知要素)Em1。
Here, for example, the
又,此處,例如亦可如圖22所示般,將第1區域Ar1之2個以上之第1設定項目,以群組單位來變更為第2區域Ar2之2個以上之第2設定項目。 Moreover, here, for example, as shown in FIG. 22 , two or more first setting items in the first area Ar1 may be changed into two or more second setting items in the second area Ar2 in group units. .
此處,例如假設如下之情形:於配方輸入畫面Sc0中,在第1區域Ar1有分別包含有關複數個第1設定項目中之2個
以上之第1設定項目之複數個第1設定項目群之各者之群組名相關之第1顯示要素Dc1~Dc3存在。於該情形時,例如畫面製作部10a亦可根據回應操作員之動作而由輸入部8所輸入之信號,針對複數個第1設定項目群中之每個第1設定項目群,分別將第1區域Ar1之2個以上之第1設定項目,以包含於第2區域Ar2之複數個第2設定項目之方式變更為2個以上之第2設定項目。例如,可為如下之態樣:如圖22所示般,於配方輸入畫面Sc0中,藉由在將滑鼠游標Mp1對準並將滑鼠之左鍵按下之狀態下使被顯示於第1區域Ar1之複數個第1顯示要素Dc1~Dc3中之1個第1顯示要素Dc2移動之拖拽操作、及解除滑鼠之左鍵之按下之放置操作,而移動至第2區域Ar2,藉此將屬於第2群組之2個以上之第1設定項目設為2個以上之第2設定項目。若採用如此之構成,例如操作員可於設定不依存於時間之經過之條件之複數個第1設定項目與設定依存於時間之經過之條件之複數個第2設定項目之間,效率佳地替換設定項目。
Here, for example, assume the following situation: in the recipe input screen Sc0, the first area Ar1 includes two of the plurality of first setting items.
The first display elements Dc1 to Dc3 related to the group names of each of the plurality of first setting item groups above exist. In this case, for example, the
<2.變形例> <2.Modification>
本發明並不限定於上述之實施形態者,可於不脫離本發明之主旨之範圍內進行各種變更、改良等。 The present invention is not limited to the above-described embodiments, and various changes, improvements, etc. can be made without departing from the gist of the present invention.
於上述第1實施形態中,基板W之單位處理量並不限定於既定之片數,例如亦可為既定之重量等與其他指標對應之值。例如,若基板W之單位處理量為既定之重量,則亦可藉由感測器部11m來計測構成1個批次之複數片基板W之重量,並藉由算出部10g,根據利用感測器部11m所計測之重量、及有關每既定
之重量之處理液之供給量的數值,來算出處理液之供給量。又,與其他指標對應之值,例如可應用有關基板W所被實施之藥液處理之時間的單位時間(亦稱為單位處理時間)。於該情形時,處理液之供給量例如亦可根據作為有關基板W之單位處理量之每單位處理時間之處理液之供給量的數值、及對基板W實施之藥液處理之合計時間所算出。
In the above-mentioned first embodiment, the unit throughput of the substrate W is not limited to a predetermined number of pieces, but may also be a value corresponding to a predetermined weight and other indicators, for example. For example, if the unit throughput of the substrate W is a predetermined weight, the
於上述第1實施形態中,例如配方亦可規定藉由液體供給部SL1對各處理槽CB2供給處理液分別之時機。若採用如此之構成,例如可針對每個藥液處理部52分別將與基板W之處理量對應之量的處理液,在藥液處理之預處理、主處理及後處理等之適當的時機供給至處理槽CB2。
In the above-described first embodiment, for example, the recipe may specify the timing of supplying the processing liquid to each processing tank CB2 through the liquid supply part SL1. If such a structure is adopted, for example, an amount of processing liquid corresponding to the processing amount of the substrate W can be supplied to each chemical
於上述第1實施形態中,例如在處理液自液體供給部SL1朝向處理槽CB2之每單位時間之供給量固定之情形時,被記述於配方之有關基板W之每單位處理量之處理液之供給量的數值V1a、V1b以及被記述於1個配方之數值資訊所包含之有關基板W之每單位處理量之處理液之供給量的基準值Vs1及調整值Va1,亦可應用處理液之供給時間。 In the above-described first embodiment, for example, when the supply amount of the processing liquid from the liquid supply part SL1 to the processing tank CB2 per unit time is fixed, the processing liquid per unit processing amount of the substrate W is described in the recipe. The numerical values V1a and V1b of the supply amount and the reference value Vs1 and the adjustment value Va1 of the supply amount of the processing liquid per unit processing amount of the substrate W included in the numerical information described in one recipe can also be applied to the supply of the processing liquid. time.
於上述第1實施形態中,基板處理裝置100雖具有具有相同構成之2個藥液處理部52,但亦可具有例如具有3個以上相同之構成之藥液處理部52。
In the above-described first embodiment, the
於上述第1實施形態中,配方雖於基板處理裝置100所製作,但例如亦可採用配方自可進行通信地被連接於基板處理裝置100之外部裝置所發送之構成。
In the above-described first embodiment, the recipe is produced in the
於上述第1實施形態中,例如,對於關於配方輸入畫
面Sc0中每個群組之2個以上之設定項目之壓縮狀態與展開狀態之間之轉換、以及配方輸入畫面Sc0中第1設定項目與第2設定項目之間之項目之變更的各種構成,並不限於批次式之基板處理裝置100,亦可應用於單片式之基板處理裝置。
In the first embodiment described above, for example, regarding the recipe input screen
Various structures include the conversion between the compressed state and the expanded state of two or more setting items of each group in the screen Sc0, and the change of the items between the first setting item and the second setting item in the recipe input screen Sc0, It is not limited to the batch type
當然,亦可將分別構成上述一實施形態及各種變形例之全部或一部分,適當地在不會產生矛盾之範圍內加以組合。 Of course, all or part of the above-mentioned embodiments and various modifications may be appropriately combined within the scope that does not cause contradiction.
10:控制部 10:Control Department
10a:畫面製作部 10a: Screen production department
10b:顯示控制部 10b: Display control part
10c:配方製作部 10c:Recipe Production Department
10d:排程製作部 10d: Scheduling Production Department
10e:取得部 10e: Acquisition Department
10f:識認部 10f: Recognition Department
10g:算出部 10g: Calculation part
10h:供給控制部 10h: Supply Control Department
10i:模式切換部 10i: Mode switching unit
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JP2008306089A (en) | 2007-06-11 | 2008-12-18 | Panasonic Corp | Immersion type cleaning device |
JP5368116B2 (en) | 2008-03-25 | 2013-12-18 | 大日本スクリーン製造株式会社 | Substrate processing apparatus and substrate processing method |
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JPH08107095A (en) * | 1994-08-08 | 1996-04-23 | Tokyo Electron Ltd | Processing device, cleaning processing device and image processing device thereof |
US20030130754A1 (en) * | 2002-01-08 | 2003-07-10 | Tokyo Electron Limited | Processing system and processing method |
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