JP5368116B2 - Substrate processing apparatus and substrate processing method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a substrate treating apparatus for keeping a treatment rate within a constant range by performing a partial liquid replacement while taking a film thickness into consideration. <P>SOLUTION: A control unit 25 allows substrates W to be treated while performing a partial liquid replacement once the number of substrates W corresponding to the substrate W having thick-film, among the number of substrates W counted by a counter 37, reaches a normal life count. Namely, the partial liquid replacement is performed based upon the treatment number of substrates W corresponding to the substrate W having thick-film large in degree of deterioration of a phosphoric acid solution, so the etching rate of the phosphoric acid solution is kept within the constant range. <P>COPYRIGHT: (C)2010,JPO&amp;INPIT

Description

  The present invention relates to a substrate processing apparatus and a substrate processing method for performing predetermined processing such as etching and cleaning on a glass substrate (hereinafter simply referred to as a substrate) for a semiconductor wafer or a liquid crystal display device, and in particular while performing liquid exchange. The present invention relates to processing technology.

Conventionally, as this type of apparatus, for example, phosphoric acid (H ₃ PO ₄ ) is stored as a processing liquid, a processing tank for immersing the substrate, a processing liquid supply unit that supplies the processing liquid to the processing tank, and a processing tank An apparatus including a processing liquid discharge unit that discharges the processing liquid is exemplified (see, for example, Patent Document 1).

  For example, when an oxide film is deposited on a substrate to be processed and a nitride film is further deposited thereon, a process of etching the nitride film with phosphoric acid is performed. In this case, not only the nitride film which is the purpose of etching but also the oxide film is etched at the same time. Since the etched film is eluted in the processing solution, the concentration of the coating material in the processing solution increases as the substrate is processed. Therefore, the processing rate with the same processing liquid gradually decreases. Therefore, when a certain number of lots (or a certain number of substrates) have been processed, a part of the processing liquid is discharged from the processing liquid discharge section, and the amount of processing liquid corresponding to the discharged processing liquid is supplied. Exchange ". By this partial liquid exchange, the reduced processing rate is maintained within a certain target range. As the predetermined number of lots (or the predetermined number of substrates) at this time, a preset parameter called “life count” is used, and the number of lots (or the number of processed substrates) is counted, and the counted value Partial liquid exchange is performed when reaches the life count.

    JP 2001-23952 A

However, the conventional example having such a configuration has the following problems.
That is, the film thickness of the nitride film deposited on the substrate is, for example, a film thickness deposited on the substrate in a conventional apparatus, even though there is a thick film of about 100 nm and a thin film of about 10 nm. Regardless of, management is performed with a parameter called a common life count. Therefore, since the degree of deterioration of the processing liquid at the time of partial liquid replacement is different, there is a problem that the processing rate may not be maintained within a certain range even when partial liquid replacement is performed.

  The present invention has been made in view of such circumstances, and a substrate processing apparatus capable of maintaining the processing rate of the processing liquid within a certain range by exchanging the partial liquid in consideration of the film thickness. It is another object of the present invention to provide a substrate processing method.

In order to achieve such an object, the present invention has the following configuration.
That is, the invention described in claim 1 is a substrate processing apparatus for processing a substrate with a processing liquid, a substrate counting means for counting the number of substrates, and a process for storing a processing liquid and performing a predetermined processing on the substrate. A processing liquid supply means for supplying a processing liquid to the processing tank, a processing liquid discharge means for discharging the processing liquid from the processing tank, and a thick film substrate is processed with the processing liquid stored in the processing tank. Storage means for preliminarily storing a life count that defines the number of processing sheets allowed, and the number of substrates converted into a thick film based on a certain thick film among the number of substrates counted by the substrate counting means When the life count stored in the storage means is reached, a predetermined amount corresponding to a part of the processing liquid in the processing tank is discharged by the processing liquid discharge means, and the processing liquid supply means For quantitative And a control means for processing a substrate while performing the partial liquid replacement supplies those to a new process liquid, the said storage means, less than one replenishing amount parameter according to a predetermined amount when performing partial liquid exchange Is stored in advance, and when the number of substrates converted to the thick film reaches the life count with respect to a certain thick film among the substrates counted by the substrate counting means, As an initial value of the substrate counting means, a value obtained by multiplying the number of substrates counted before partial liquid replacement by the replenishment amount parameter is set .

[Operation / Effect] According to the first aspect of the present invention, the control means is configured such that, out of the number of substrates counted by the substrate counting means, a certain thick film is used as a reference, and the number of substrates converted to the thick film is Based on the fact that the life count has been reached, the substrate is processed while exchanging the partial liquid by the processing liquid discharge means and the processing liquid supply means. When performing partial liquid exchange, a value obtained by multiplying the number of substrates counted until partial liquid exchange by a replenishment amount parameter less than 1 is set as an initial value of the substrate counting means. That is, since the partial liquid exchange is performed based on the number of processed substrates corresponding to a thick film having a large degree of deterioration of the processing liquid, the processing rate of the processing liquid can be kept within a certain range.

  A thick film substrate may be equivalent to a thick film substrate, and the number of thin film substrates is multiplied by a count less than 1 according to the film thickness to convert the number of thin film substrates into a thick film equivalent. You may make it count. As a result, it is possible to increase the accuracy within a desired processing rate range. Alternatively, the coefficient may be multiplied based on whether the number of lots is a predetermined number or less. In other words, for example, when one lot is composed of 25 sheets and some of the lots are 12 sheets, each lot is multiplied by 0.5. Thereby, accuracy can be maintained even when the number of substrates constituting the lot varies.

Further, in the present invention, the control means includes a type of thick or thin film, further comprising instruction means for instructing the recipe defining the procedures for processing a substrate, the recipe instructed by the instructing means It is preferable to determine the type of the substrate based on this. For the substrate to be processed, a recipe specifying the processing content is instructed in advance from the instruction means. Since the recipe includes a type of thick film or thin film, it can be determined that the film is a thick film based on the type.

  Moreover, in this invention, it is preferable to further provide the setting means for setting the said life count (Claim 3). The processing rate can be set in a range suitable for processing by setting the life count.

(Reference: Initially, the effect of claim 4) Since the degree of deterioration of the remaining processing liquid that has not been discharged is completely different depending on the number of substrates processed before partial liquid replacement, the deterioration of the processing liquid after partial liquid replacement The degree will also be different. Therefore, although there is no problem in the total liquid replacement, if the initial value of the substrate counting means is set to “0” during the partial liquid replacement, a situation may occur where the upper limit of the number of processed substrates is exceeded when the life count is reached. Therefore, a replenishment amount parameter of less than 1 corresponding to a predetermined amount (replenishment amount) when partial liquid replacement is performed is multiplied by the number of processed substrates, and this is used as an initial value for counting in the substrate counting means. Thereby, the deterioration degree of the remaining processing liquid can be reflected in the initial value of the life count. As a result, it is possible to prevent a situation where the upper limit of the number of processed substrates is exceeded.

  The replenishment amount parameter is, for example, 0.5 when the predetermined amount is 50% and 0.7 when the predetermined amount is 30%.

According to a fourth aspect of the present invention, in a substrate processing method for processing a substrate with a processing liquid, the process of counting the number of substrates, the process of processing the substrate with a processing liquid, and a predetermined amount when performing partial liquid exchange and allowed to store one less replenishing amount parameters corresponding advance step, based on the thick film Ru Oh, processed number of sheets of the substrate in terms of the thick film is allowed to process the substrate with a processing solution when it reaches the life count defining the serves to discharge a predetermined amount corresponding to a portion of the processing liquid, it has rows partial liquid replacement supplies new processing solution corresponding to the predetermined amount, the initial number of substrates And a step of setting a value obtained by multiplying the number of substrates counted before partial liquid replacement by the replenishment amount parameter .

[Operation and Effect] According to the invention described in claim 4, when the number of substrates corresponding to the thick film reaches the life count, the partial liquid exchange is performed. When partial liquid replacement is performed, a value obtained by multiplying the number of substrates counted until partial liquid replacement by a replenishment amount parameter less than 1 is set as an initial value of the number of substrates. Thereby, the deterioration degree of the remaining processing liquid can be reflected in the initial value of the life count. That is, since the partial liquid replacement is performed based on the number of processed sheets corresponding to a thick film substrate having a large degree of deterioration of the processing liquid, the processing rate can be maintained within a certain range.

According to the substrate processing apparatus of the present invention, the control means, based on a certain thick film, out of the number of substrates counted by the substrate counting means, has reached the life count. Based on this, the substrate is processed while exchanging the partial liquid by the processing liquid discharge means and the processing liquid supply means. When performing partial liquid exchange, a value obtained by multiplying the number of substrates counted until partial liquid exchange by a replenishment amount parameter less than 1 is set as an initial value of the substrate counting means. In other words, since the partial liquid exchange is performed based on the number of processed sheets corresponding to the thick film substrate having a large degree of deterioration of the treatment liquid, the treatment rate is higher than the conventional example in which the partial liquid exchange is performed regardless of the film thickness. It can be kept within a certain range.

It is a top view which shows schematic structure of the substrate processing system provided with the substrate processing apparatus which concerns on an Example. It is a block diagram which shows schematic structure of the substrate processing system provided with the substrate processing apparatus which concerns on an Example. It is a block diagram which shows schematic structure of the substrate processing apparatus which concerns on an Example. It is a time chart which shows the timing of liquid replacement. It is a schematic diagram which shows the flow of a lot. It is a flowchart which shows operation | movement. It is a figure with which it uses for description of the problem by a normal life count. It is a figure where it uses for description at the time of employ | adopting the replenishment amount parameter.

An embodiment of the present invention will be described below with reference to the drawings.
FIG. 1 is a plan view illustrating a schematic configuration of a substrate processing system including a substrate processing apparatus according to an embodiment. FIG. 2 is a block diagram illustrating a schematic configuration of the substrate processing system including the substrate processing apparatus according to the embodiment.

  This substrate processing system is, for example, an apparatus for performing chemical processing, cleaning processing, and drying processing on the substrate W. A plurality of substrates (for example, 25 substrates) are stored in a standing posture with respect to the cassette 1. The cassette 1 storing the unprocessed substrates W is placed on the input unit 3. The input unit 3 includes two mounting tables 5 on which the cassette 1 is mounted. A payout unit 7 is provided at a position adjacent to the input unit 3. The dispensing unit 7 stores the processed substrate W in the cassette 1 and dispenses the cassette 1 together. Similar to the loading unit 3, the payout unit 7 includes two mounting bases 9 for mounting the cassette 1.

  A first transport mechanism CTC configured to be movable between these is provided at a position along the input unit 3 and the payout unit 7. The first transport mechanism CTC takes out all the substrates W stored in the cassette 1 placed on the input unit 3 and then transports them to the second transport mechanism WTR. The first transport mechanism CTC stores the processed substrate W from the second transport mechanism WTR and then stores the substrate W in the cassette 1. The second transport mechanism WTR is movable along the longitudinal direction of the substrate processing apparatus. The first transport mechanism CTC counts the number of substrates W stored in the cassette 1. In other words, the lot is recognized, and the number of substrates W constituting the lot is recognized.

  The first transport mechanism CTC corresponds to “substrate counting means” in the present invention.

  A drying processing unit LPD for storing a plurality of substrates W in a low-pressure chamber and drying them is provided on the most front side in the moving direction of the second transport mechanism WTR.

  A first processing unit 19 is disposed at a position adjacent to the drying processing unit LPD in the moving direction of the second transport mechanism WTR. The first processing unit 19 includes a pure water cleaning processing unit ONB1 for performing a pure water cleaning process on a plurality of substrates W, and a processing liquid containing a chemical solution for the plurality of substrates W. A chemical treatment unit CHB1 for performing chemical treatment is provided. The first processing unit 19 includes a sub-transport mechanism LFS1 that delivers the substrate W to and from the second transport mechanism WTR and can be moved up and down only by the pure water cleaning processing unit ONB1 and the chemical solution processing unit CHB1.

  A second processing unit 21 is provided at a position adjacent to the first processing unit 19. The second processing unit 21 has the same configuration as the first processing unit 19. That is, it includes a pure water cleaning processing unit ONB2, a chemical processing unit CHB2, and a sub-transport mechanism LFS2.

  On the mounting table 5 side, an instruction unit 23 is attached for instructing each cassette 1 with a recipe that prestores a procedure that defines a procedure for processing a substrate. The operator operates the instructing unit 23 to associate a recipe for each cassette 1 (lot), or set an adjustment life count (details will be described later) or a normal life count (details will be described later). The recipe here includes the type of thick film or thin film. In addition, the thick film here is, for example, 100 nm or more, and the thin film is, for example, 10 nm or less.

  The instruction unit 23 corresponds to “instruction means” and “setting means” in the present invention.

  The substrate processing system configured as described above is comprehensively controlled by the control unit 25 as shown in the block diagram of FIG.

  The control unit 25 corresponding to the “control unit” of the present invention includes a CPU, a timer, etc., and a scheduling unit (not shown). The control unit 25 stores in advance a recipe, a schedule creation program, a processing program for executing the created schedule, and the like in a storage unit (not shown). An individual function unit 27 provided for each substrate processing apparatus described later is connected to the control unit 25.

  The individual function unit 27 includes a first memory 33, a second memory 35, a third memory 36, and a counter 37. The counter 37 counts the number of substrates W processed and the number of lots for each process in order to count the number of substrates W processed with the same processing liquid. Further, among the types of film thicknesses, the number of sheets corresponding to the substrate W on which the thick film is deposited is counted. Note that the thin film substrate W is handled by the control unit 25 as being equivalent to the thick film substrate W in several lots by multiplying the count value by a coefficient such as 0.5 or 0.3 which is less than 1. preferable. Similarly, when the number of substrates W in one lot is smaller than a predetermined number (for example, 25), it is preferable to multiply by a coefficient less than 1. The first memory 33 to the third memory 36 will be described later.

Here, with reference to FIG. 3, the chemical processing unit CHB1 (CHB2) corresponding to the “substrate processing apparatus” in the present invention will be described. FIG. 3 is a block diagram illustrating a schematic configuration of the substrate processing apparatus according to the embodiment. In the following description, a phosphoric acid solution containing phosphoric acid (H ₃ PO ₄ ) and pure water will be described as an example of the treatment liquid.

  The substrate processing apparatus includes a processing tank 41, and the processing tank 41 includes an inner tank 43 and an outer tank 45 that recovers a phosphoric acid solution overflowing from the inner tank 43. The inner tank 43 is provided with a holding arm 47 that can move the substrate W up and down over a processing position in the inner tank 43 and a standby position above the inner tank 43. The holding arm 47 abuts and supports the plurality of substrates W in a standing posture. The holding arm 47 is the above-described sub-transport mechanisms LFS1 and LFS2.

  The inner tank 43 includes a pair of ejection pipes 49 for supplying a phosphoric acid solution at the bottom. Moreover, the outer tank 45 is equipped with the discharge port 51 for discharging | emitting the collect | recovered phosphoric acid solution in the bottom part. The ejection pipe 49 and the discharge port 51 are connected in communication by a circulation pipe 53. In this circulation pipe 53, a pump 55, an inline heater 57, and a filter 59 are arranged in this order from the discharge port 51 side. The in-line heater 57 has a function of heating the circulating phosphoric acid solution (for example, 120 to 180 ° C.), and the filter 59 has a function of removing particles and the like in the phosphoric acid solution. In the circulation pipe 53, an open / close valve 61 is disposed between the discharge port 51 and the pump 55, and an open / close valve 63 is disposed between the pump 55 and the in-line heater 57.

One end of a supply pipe 67 is connected to the processing liquid supply source 65 in communication. The treatment liquid supply source 67 stores phosphoric acid (H ₃ PO ₄ ) at room temperature (for example, 25 ° C.). The supply pipe 67 is provided with a control valve 69 capable of controlling the flow rate. The other end side of the supply pipe 67 is connected to a supply unit 71 corresponding to the upper part of the outer tub 45. The phosphoric acid supplied from the processing liquid supply source 65 passes through the supply pipe 67 and is supplied from the supply unit 71 to the outer tub 45 at a flow rate set by the control valve 69.

  The supply unit 71 corresponds to the “treatment liquid supply unit” in the present invention.

  In the circulation pipe 53 described above, a branch portion 73 is disposed between the pump 55 and the on-off valve 63. In addition, a bottom discharge port 75 that is used when the processing liquid in the inner tank 43 is rapidly discharged is formed at the bottom of the inner tank 43. A bottom discharge pipe 77 is connected to the bottom discharge port 75 and the circulation pipe 53 on the upstream side of the pump 55. The bottom discharge pipe 77 is provided with an on-off valve 79. The branch portion 73 is provided with a drainage pipe 81 for guiding the phosphoric acid solution discharged through the bottom discharge port 75 and the bottom discharge pipe 77 to the drainage system. The drainage pipe 81 is provided with an on-off valve 83.

  The bottom discharge port 75 and the bottom discharge pipe 77 described above correspond to the “treatment liquid discharge means” in the present invention.

  A concentration meter 85 is attached to the inner tank 43 along the inner wall. The concentration meter 85 detects a specific substance of the substrate W eluted in the phosphoric acid solution. For example, when the substrate W is made of silicon, the dissolved concentration of silicon in the phosphoric acid solution is measured and the measured concentration signal is output.

  A pure water supply unit 87 is disposed above the outer tub 45. The pure water supply unit 87 is connected in communication with a supply pipe 88 connected to a pure water supply source. A control valve 89 capable of adjusting the flow rate is attached to the supply pipe 88.

  Each structure mentioned above is controlled by the control part 25 centralizedly. A first memory 33, a second memory 35, and a third memory 36 in the individual function unit 27 are connected to the control unit 25. The control unit 25 operates the on-off valve 83 and the control valve 69 according to the set values of the counter 37 and the first memory 33 and the second memory 35 to perform all liquid replacement or partial liquid replacement described later. . Further, the control unit 25 operates the control valve 89 and the like based on the concentration signal from the densitometer 85 to appropriately control the silicon concentration in the phosphoric acid solution to be substantially constant.

  The first memory 33 performs the entire liquid exchange for supplying a new phosphoric acid solution from the supply unit 71 to the processing tank 41, then processes the substrate W with the processing liquid, and sets the number of processing times within a desired processing rate range. The specified adjustment life count ILC is stored in advance. This adjustment life count ILC is known in advance through experiments or the like to determine how many substrates W have been processed and how many sheets can be processed within a desired processing rate range. Stored in advance.

  After reaching the adjusted life count ILC, the second memory 35 discharges a predetermined amount corresponding to a part of the phosphoric acid solution in the treatment tank 41 from the drainage pipe 81 and a new phosphoric acid solution corresponding to the predetermined amount from the supply unit 71. The normal life count NLC that prescribes the number of treatments (or the number of treatments) allowed to treat the substrate W corresponding to the thick film with the phosphoric acid solution after the partial liquid exchange is supplied in advance is stored. . However, as described above, by multiplying the number of processed substrates W other than the thick film, for example, the thin film substrate W by a coefficient, for example, two lots of the substrate W are processed, so that one lot of the thick film substrate W is processed. It is preferable that the control unit 25 determines that the divided processing has been performed, or considers the number of substrates constituting the lot. Thus, by counting lots corresponding to thick films, it is possible to increase the accuracy within a desired processing rate range. Details of the third memory 36 will be described later.

  The normal life count NLC described above corresponds to “life count” in the present invention, and the second memory 35 corresponds to “storage means” in the present invention.

  Next, the adjusted life count ILC and the normal life count NLC described above will be described with reference to FIG. FIG. 4 is a time chart showing the timing of liquid replacement.

  When the entire liquid is replaced at the beginning of the process or as the liquid deteriorates, the control unit 25 supplies phosphoric acid from the supply unit 71 to the processing tank 41. This timing is time t1 in FIG. When the control unit 25 determines that the number of processed sheets from the counter 37 matches the adjusted life count ILC, the controller 25 performs partial liquid replacement. Schematically, the on-off valve 83 is opened to discharge a predetermined amount of phosphoric acid solution from the processing tank 41, and the on-off valve 83 is closed to supply substantially the same amount of phosphoric acid from the supply unit 71 to the processing tank. 41. This timing is time t2 in FIG. Thereafter, the control unit 25 performs partial liquid exchange every time the number of processes from the counter 37 matches the normal life count NLC (time t3, t4).

  The adjustment life count ILC and the normal life count NLC described above are determined in advance as follows.

  First, a substrate W having the same type and the same processing as the substrate W to be processed by this apparatus is prepared. Then, the same processing conditions, for example, the number of substrates W to be processed at the same time, the concentration / temperature of the phosphoric acid solution, the time for immersing the substrate W in the phosphoric acid solution, and the like are matched with the substrate W which is an actual product. And after processing the board | substrate W which matched process conditions on the same conditions, a process rate is measured. This processing rate is, for example, an etching rate of an oxide film or a nitride film. Here, the target etching rate is assumed to be between the etching rates ER2 to ER5 in FIG. Then, as a result of processing a plurality of substrates W, the number of processes and the number of processes that decrease to an etching rate ER4 that is slightly higher than the lower limit of the target etching rate are obtained with a margin from the target etching rates ER2 to ER5. The number of processes and the number of processes at that time are set in the first memory 33 as the adjustment life count ILC.

  Moreover, although the etching rate becomes higher by the subsequent partial liquid exchange, the discharge amount and the supply amount of the partial liquid exchange so that the etching rate ER3 is slightly lower than the etching rate ER2 which is the upper limit of the target etching rate. Is set in advance. Further, after the partial liquid exchange, the conditions are adjusted as described above, and after processing the thick substrate W under the same conditions, the etching rate is measured, and the number of treatments and the number of treatments that decrease to the etching rate ER4 are obtained. This is set in the second memory 35 as the normal life count NLC.

  Specifically, the adjusted life count ILC is, for example, 15 to 40 lots, and the normal life count NLC is, for example, about 5 to 6 lots. Since the instruction unit 23 is provided, the adjusted life count ILC and the normal life count NLC can be set to appropriate values according to the experimental results as described above. Therefore, even if the processing conditions are different, the processing can be continuously performed while keeping the etching rate within the target range.

  Next, the adjusted life count ILC and the normal life count NLC will be described with reference to FIG. FIG. 5 is a schematic diagram showing the flow of lots. In FIG. 5, a reference numeral TC is assigned to a thick film without reference to a film having any thickness other than the thick film.

  In FIG. 5, the entire solution is exchanged at time t1, and for example, the adjustment processing of the phosphoric acid solution is completed at time t2 when the substrate W for 16 lots is processed subsequently. That is, it shall be within the desired etching rate range. Then, partial liquid exchange is performed at time t2, and then a plurality of lots including various substrates W are processed, and the normal life count NLC is reached at time t3 when lots of thick film substrates W are processed for 5 lots. Suppose that Then, partial liquid exchange is performed at time t3, and subsequently, various lots of substrates W are processed. Six lots of thick film substrates W are processed, and the normal life count NLC is reached at time t4. . Then, partial liquid exchange is performed at time t4, and processing of the next lot is sequentially performed. In the counter (not shown), the elapsed time from the time t1 when all the liquids are exchanged is measured, and the whole liquid is exchanged when a predetermined time (lifetime) has elapsed.

  In the schematic diagram of FIG. 5 described above, there are a process in which the thick film substrate W is partially liquid exchanged for 6 lots and a process in which the thick film substrate W is partially liquid exchanged for 5 lots. However, this is because a lot of substrates W other than the thick film is multiplied by a coefficient and handled as a thick film in several lots, or the number of substrates W constituting the lot is taken into consideration. However, when the range of the desired etching rate is relatively wide, partial liquid exchange may be performed by simply counting only the number of thick-film substrates W and the number of lots without performing such treatment.

  Next, the operation of the above-described apparatus will be described with reference to FIG. FIG. 6 is a flowchart showing the operation. In order to facilitate understanding of the description, the detailed operation of the substrate processing system described above will be omitted, and only the operation in the chemical solution processing unit CHB1 (CHB2) will be described. In addition, the instruction | indication of the recipe for every lot by the instruction | indication part 23 shall be implemented suitably.

Step S1
The control part 25 operates each part and performs all liquid exchange. However, since the processing tank 41 is empty, the on-off valves 61 and 63 are opened, the on-off valves 79 and 83 are closed, the control valve 69 is opened, and phosphoric acid is supplied from the supply unit 71 to the inner tank 43. Then, the pump 55 is operated and the in-line heater 57 is operated to circulate the phosphoric acid solution to generate a phosphoric acid solution having a required processing condition (for example, a temperature of 180 ° C.). Further, the control valve 89 is opened, and pure water is appropriately supplied from the pure water supply unit 87 as a diluent, and the phosphoric acid concentration is adjusted to adjust the initial processing conditions. Further, the counter 37 is reset, and the integrated value of the number of processed sheets and the number of processed processes is set to zero. This state corresponds to a time point t1 in FIGS.

Step S2, S3
The number of substrates W corresponding to a thick film is counted among the substrates W, and the number of processing and the number of processing of the counter 37 are incremented (step S2). Then, the process branches depending on whether or not the number of processed sheets (or the number of processed processes) has reached the adjustment life count ILC (step S3). Specifically, when the number of processed sheets has reached the adjusted life count ILC, the process proceeds to step S6 to perform partial liquid replacement. The reached state corresponds to time t2 in FIGS. On the other hand, when it has not reached | attained, it transfers to step S4. Here, the case where it has not reached first will be described. The inconsistent state is between time t1 and time t2 in FIGS.

Steps S4 and S5
The substrate W is held by the holding arm 47, the holding arm 47 is lowered to the processing position, and processing is performed for a predetermined time (step S4). When the processing is completed, the holding arm 47 is raised and the substrate W is unloaded (step S5). And it returns to step S2 mentioned above and makes it repeat a process.

Step S6
When the number of processed sheets (or the number of processed processes) reaches the initial life count ILC, the control unit 25 operates each unit to perform partial liquid exchange. First, the inline heater 57 is stopped. Then, the on-off valves 79 and 63 are closed and the on-off valve 83 is opened. Then, the pump 55 is operated for a predetermined time, and a predetermined amount of phosphoric acid solution is discharged from the processing tank 41. Next, the open valve 83 is closed and the open / close valve 63 is opened. Then, the control valve 69 is opened, and an amount of phosphoric acid corresponding to the discharged amount is supplied from the supply unit 71 to the inner tank 43, and the pump 55 and the inline heater 57 are operated so that the phosphoric acid after the partial liquid replacement is performed. Allow solution to adjust to processing conditions. Further, the counter 37 is reset, and the integrated value of the number of processed sheets and the number of processed processes is set to zero. This state corresponds to the time point t2 in FIGS.

Steps S7 and S8
Counting is performed for the substrate W corresponding to the thick film, and the number of processing and the number of processing of the counter 37 are incremented (step S7). Then, the process branches depending on whether the number of processes (or the number of processes) has reached the normal life count NLC (step S8). Specifically, when the number of processed sheets has reached the adjustment life count ICL, the process returns to step S6 to perform partial liquid exchange. The reached state corresponds to a time point t3 in FIGS. On the other hand, when it has not reached | attained, it transfers to step S9. Here, the description will be made assuming that the destination has not been reached. In addition, the state which has not reached | attains from the time t2 of FIG. 4, FIG. 5 to the time t3.

Steps S9 and S10
The substrate W is held by the holding arm 47, the holding arm 47 is lowered to the processing position, and processing is performed for a predetermined time (step S9). When the processing is completed, the holding arm 47 is raised and the substrate W is unloaded (step S10).

Step S11
Processing is branched depending on whether processing has been completed for all the processing target lots or whether the generated processing liquid has exceeded the lifetime (maximum usable processing time). If the processing has not been completed for all the lots to be processed or if it is less than the lifetime, the process returns to step S7 to perform the next processing, and if the processing has been completed for all the lots to be processed or the lifetime is longer than In the case, the above-described series of processing is finished.

  As described above, according to the present embodiment, the control unit 25 determines that the number of substrates W corresponding to the thick film among the number of substrates W counted by the counter 37 has reached the normal life count NLC. Based on this, the substrate W is processed while performing partial liquid exchange. That is, since the partial liquid exchange is performed based on the number of processed substrates W corresponding to a thick film having a large degree of deterioration of the phosphoric acid solution, the etching rate of the phosphoric acid solution can be maintained within a certain range.

  Since the following inconvenience may occur, it is preferable to take the following measures. Reference is now made to FIG. FIG. 7 is a diagram for explaining a problem due to a normal life count. In the graph in FIG. 7, the solid line represents the actual life count, and the dotted line represents the life count by the counter 37.

  Here, when the life count is 1000 and the number of processed substrates W exceeds 1000, partial liquid replacement is performed to replace 50% of the processing liquid. In addition, 2000 is set as the upper limit of the life count. In this example, 100 types of “first type lot” composed of 50 substrates W corresponding to the film thickness of two substrates and a substrate corresponding to the film thickness of five substrates as the types of lots. It is assumed that there is a “second type lot” equivalent to 300 sheets of W composed of 60 sheets. Therefore, when the first type lot is processed, the counter 37 counts 100 sheets, and when the second type lot is processed, the counter 37 counts 300 sheets. The counter 37 is reset when it matches the life count, and the count value is returned to “0”.

  In this case, as shown in FIG. 7, after the first type lot has been processed nine times in succession, 1200 substrates W have been processed at time t10 when the second type lot has been processed one lot. Therefore, the count value of the counter 37 exceeds the life count, and the life count is reached. Therefore, partial liquid replacement is performed in which half of the processing liquid is replaced at time t10. At this time t10, the initial value of the counter 37 is set to “0”.

  Then, the next lot group is processed. Specifically, since the second type of lots are processed four times in succession, the counter 37 exceeds the life count at time t14. Accordingly, the partial liquid replacement and the counter 37 are reset at time t14. By these processes, the count value history of the counter 37 becomes as indicated by the dotted line CV. However, the count value RC in consideration of the degree of deterioration exceeds 2000, which is the upper limit of the actual life count at time T18. The count value that takes into account the degree of deterioration is a value that takes into account the degree of deterioration in the remaining processing liquid that has not been exchanged and has not been considered in partial liquid exchange. Specifically, the initial value of the counter 37 is set to “0” at time t10, but actually, the remaining half of the processing liquid includes a deteriorated one after processing 600 substrates W. Yes. If this is accumulated, the count value RC considering the degree of deterioration exceeds the life count upper limit as described above.

  Therefore, it is preferable that a replenishment amount parameter corresponding to the liquid replacement amount (replenishment amount) in the partial liquid replacement is set in advance in the third memory 36 described above. The replenishment amount parameter is a numerical value less than 1, for example, 0.5 when the predetermined amount to be replenished by partial liquid replacement is 50%, and 0.6 when the predetermined amount is 40%. When the predetermined amount is 60%, it is 0.4. Then, when the counter 37 counts the first life count, the control unit 25 multiplies the count value (the number of substrates W counted so far) by the replenishment amount parameter, and uses this as the initial value of the counter 37. It is preferable to set.

  The third memory 36 described above corresponds to the “storage unit” in the present invention.

  Reference is made to FIG. 8 for the case where the replenishment amount parameter is used as described above. FIG. 8 is a diagram for explaining the case where the replenishment amount parameter is employed. In FIG. 8, the same two types of lots as in FIG. 7 are processed. However, if lots are processed in the same way as in FIG. 7, it is difficult to understand due to the relationship shown in FIG. Group processing is performed.

  The initial value of the counter 37 is set to “0”, and after processing nine lots of the first type lot, one lot of the second type lot is processed. Then, since the life count is 1200 at time t10, partial liquid replacement is performed in which only 50% of the processing liquid is replaced. Further, the control unit 25 refers to the replenishment amount parameter = 0.5 in the third memory 36 and sets the initial value of the counter 37 to 1200 sheets × 0.5 = 600 sheets. Therefore, the counter 37 starts counting from 600 sheets after time t10. As a result, since the count value of the counter 37 reaches the life count at time t14 when four lots of the first type lot are processed, partial liquid replacement is performed at time t14. Further, the initial value of the counter 37 is 600, and the count value of the counter 37 exceeds the life count at time t19 when five lots of the first type lot are processed. Therefore, partial liquid replacement is performed at time t19. Thus, when the initial value of the counter 37 is set at the time of partial liquid replacement, as shown in FIG. 8, the count value RC in consideration of the degree of deterioration coincides with the count value CV by the counter 37 and exceeds the upper limit of the life count. Can be prevented.

  As described above, a replenishment amount parameter of less than 1 corresponding to a predetermined amount (replenishment amount) at the time of partial liquid exchange is multiplied by the number of processed substrates W, and this is used as the initial value of the life count. Thereby, the deterioration degree of the remaining processing liquid can be reflected in the initial value of the life count. As a result, a situation where the upper limit of the life count is exceeded can be prevented.

  The present invention is not limited to the above embodiment, and can be modified as follows.

  (1) In the above-described embodiments, the phosphoric acid solution has been described as an example. However, the present invention can be applied even to a treatment with other treatment liquid, such as a hydrofluoric acid solution.

  (2) In the above-described embodiment, the instruction unit 23 is provided so that the normal life count can be set appropriately. However, this may be omitted. In that case, conditions are set in advance according to the processing conditions such as the processing target substrate W and processing solution, and the normal life count ILC is stored in the first memory 33 and the second memory 35 when the substrate processing apparatus is installed. Should be written. As a result, troubles caused by inadvertent rewriting can be prevented and the cost of the apparatus can be suppressed.

  (3) In the above-described embodiment, the processing is performed while the processing pipe is circulated with the circulation pipe 53, but the same effect can be obtained even in an apparatus that performs processing with the processing liquid stored in the processing tank 41. Play.

(4) In the above-described embodiments, the substrate processing apparatus of the substrate processing system has been described as an example. However, the above-described substrate processing apparatus is configured as a single unit, and the substrate for counting the number of instruction units 23 and substrates W is included in this. be a structure having a counting means the same effect.

W ... Substrate CTC ... First transport mechanism WTR ... Second transport mechanism LPD ... Drying processing unit CHB1, CHB2 ... Chemical solution processing unit 23 ... Instruction unit 25 ... Control unit 27 ... Individual function unit 33 ... First memory 35 ... Second memory 37 ... Counter 41 ... Processing tank 43 ... Inner tank 45 ... Outer tank 47 ... Holding arm 53 ... Circulating piping 55 ... Pump NLC ... Normal life count TC ... Thick film lot

Claims (5)

In a substrate processing apparatus for processing a substrate with a processing liquid,
Substrate counting means for counting the number of substrates;
A processing tank for storing a processing liquid and performing a predetermined processing on the substrate;
Treatment liquid supply means for supplying a treatment liquid to the treatment tank;
Treatment liquid discharge means for discharging the treatment liquid from the treatment tank;
Storage means for preliminarily storing a life count that defines the number of processed substrates allowed to process a thick film substrate with the processing liquid stored in the processing tank;
Of the number of substrates counted by the substrate counting means, on the basis of a certain thick film, the number of substrates converted to that thick film has reached the life count stored by the storage means, A predetermined amount corresponding to a part of the processing liquid in the processing tank is discharged by the processing liquid discharge means, and the substrate is replaced while partial liquid replacement is performed to supply a new processing liquid corresponding to the predetermined amount from the processing liquid supply means. Control means for processing;
Equipped with a,
The storage means stores in advance a replenishment amount parameter of less than 1 according to a predetermined amount when performing partial liquid exchange,
When the number of substrates converted into the thick film reaches the life count with respect to a certain thick film among the substrates counted by the substrate counting means, the control means is the initial of the substrate counting means. A substrate processing apparatus characterized in that a value obtained by multiplying the number of substrates counted before partial liquid replacement by the replenishment amount parameter is set as a value . The substrate processing apparatus according to claim 1,
The control means further includes an instruction means for instructing a recipe that defines a procedure for processing a substrate, including a type of thick film or thin film,
A substrate processing apparatus for determining a type of a substrate based on the recipe instructed by the instruction means . The substrate processing apparatus according to claim 1 or 2,
A substrate processing apparatus, further comprising setting means for setting the life count. In a substrate processing method for processing a substrate with a processing liquid,
The process of counting the number of substrates,
A process of treating a substrate with a treatment liquid;
A process of storing in advance a replenishment amount parameter of less than 1 according to a predetermined amount when performing partial liquid exchange ;
Thick film Ru Ah as a reference, the number of substrates in terms of its thickness film, when it reaches the life count defining the number of processed sheets it is permissible to process a substrate in the processing solution, a portion of the processing liquid wherein while discharging a predetermined amount, have rows partial liquid replacement supplies new processing solution corresponding to the predetermined amount, the initial value of the number of substrates, the number of substrates were counted until the part-liquid exchange corresponding to A process of setting a value multiplied by the replenishment amount parameter ;
A substrate processing method characterized by comprising: The substrate processing method according to claim 4 ,
Thick film or thin film type determination is performed based on a recipe that prescribes a procedure for processing a substrate, including a thick film or thin film type.

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