TWI814754B - Display device and its working method - Google Patents

Display device and its working method Download PDF

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TWI814754B
TWI814754B TW107143506A TW107143506A TWI814754B TW I814754 B TWI814754 B TW I814754B TW 107143506 A TW107143506 A TW 107143506A TW 107143506 A TW107143506 A TW 107143506A TW I814754 B TWI814754 B TW I814754B
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pixel
transistor
display
display panel
pixels
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TW201928924A (en
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吉本智史
檜山真里奈
楠紘慈
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日商半導體能源研究所股份有限公司
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
    • G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
    • G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
    • G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
    • G09G3/3225—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G5/00—Control arrangements or circuits for visual indicators common to cathode-ray tube indicators and other visual indicators

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
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  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Control Of Indicators Other Than Cathode Ray Tubes (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Thin Film Transistor (AREA)
  • Control Of El Displays (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Numerical Control (AREA)
  • Selective Calling Equipment (AREA)
  • Controls And Circuits For Display Device (AREA)

Abstract

提供一種顯示品質高的顯示裝置。該顯示裝置包括將第一像素排列為矩陣狀的第一像素部及將第二像素排列為矩陣狀的第二像素部。首先，形成具有校正顯示在第一像素部的影像的功能的第一校正濾波器及具有校正顯示在第二像素部的影像的功能的第二校正濾波器。接著，對第一校正濾波器的濾波值、第二校正濾波器的濾波值進行比較。然後，根據比較結果對第一校正濾波器的濾波值進行修正。 A display device with high display quality is provided. The display device includes a first pixel part in which first pixels are arranged in a matrix and a second pixel part in which second pixels are arranged in a matrix. First, a first correction filter having a function of correcting the image displayed in the first pixel part and a second correction filter having a function of correcting the image displayed in the second pixel part are formed. Next, the filter value of the first correction filter and the filter value of the second correction filter are compared. Then, the filter value of the first correction filter is corrected according to the comparison result.

Description

顯示裝置及其工作方法 Display device and its working method

本發明的一個實施方式係關於一種顯示裝置及其工作方法。 One embodiment of the present invention relates to a display device and a working method thereof.

注意，本發明的一個實施方式不侷限於上述技術領域。作為本發明的一個實施方式的技術領域的一個例子，可以舉出半導體裝置、顯示裝置、發光裝置、顯示系統、電子裝置、照明設備、輸入裝置(例如，觸控感測器等)、輸入輸出裝置(例如，觸控面板等)以及上述裝置的驅動方法或製造方法。 Note that one embodiment of the present invention is not limited to the above technical field. Examples of the technical field of an embodiment of the present invention include semiconductor devices, display devices, light emitting devices, display systems, electronic devices, lighting equipment, input devices (for example, touch sensors, etc.), input and output Devices (for example, touch panels, etc.) and driving methods or manufacturing methods of the above devices.

注意，在本說明書等中，半導體裝置是指能夠藉由利用半導體特性而工作的所有裝置。有時可以將顯示裝置(液晶顯示裝置、發光顯示裝置等)、投影裝置、照明設備、電光裝置、蓄電裝置、記憶體裝置、半導體電路、成像裝置及電子裝置等稱為半導體裝置。或者，有時可以說它們包括半導體裝置。 Note that in this specification and the like, a semiconductor device refers to any device that can operate by utilizing semiconductor characteristics. Display devices (liquid crystal display devices, light-emitting display devices, etc.), projection devices, lighting equipment, electro-optical devices, power storage devices, memory devices, semiconductor circuits, imaging devices, electronic devices, etc. may sometimes be referred to as semiconductor devices. Alternatively, they can sometimes be said to include semiconductor devices.

近年來，解析度高的顯示裝置被要求。例如，全高清(像素數1920×1080)顯示裝置、4K(像素數3840×2160或4096×2160等)顯示裝置、8K(像素數7680×4320或8192×4320等)顯示裝置等像素數較多的顯示裝置的開發日益興盛。 In recent years, display devices with high resolution have been required. For example, full HD (pixel count: 1920×1080) display devices, 4K (pixel count: 3840×2160 or 4096×2160, etc.) display devices, 8K (pixel count: 7680×4320, 8192×4320, etc.) display devices have a large number of pixels. The development of display devices is booming day by day.

另外，對顯示裝置有大型化的要求。例如，家用電視機的主流為其螢幕尺寸超過對角線50英寸的顯示裝置。螢幕尺寸越大，可以一次顯示的資訊越多，所以數位看板等被要求更大螢幕化。 In addition, there is a demand for larger display devices. For example, the mainstream of home televisions is a display device with a screen size exceeding 50 inches diagonally. The larger the screen size, the more information can be displayed at one time, so digital signage is required to have a larger screen.

以液晶顯示裝置及發光顯示裝置為代表的平板顯示器廣泛地被用作顯示裝置。作為構成這些顯示裝置的電晶體的半導體材料主要使用矽，但是，近年來，還開發出將使用金屬氧化物的電晶體用於顯示裝置的像素的技術。 Flat panel displays represented by liquid crystal display devices and light emitting display devices are widely used as display devices. Silicon is mainly used as a semiconductor material constituting the transistors of these display devices. However, in recent years, technology has also been developed in which transistors using metal oxides are used in pixels of display devices.

專利文獻1公開了將非晶矽用作電晶體的半導體材料的技術。專利文獻2及專利文獻3公開了將金屬氧化物用作電晶體的半導體材料的技術。專利文獻4公開了藉由排列多個顯示面板來製造大型顯示裝置的技術。 Patent Document 1 discloses a technology using amorphous silicon as a semiconductor material of a transistor. Patent Document 2 and Patent Document 3 disclose technology using metal oxides as semiconductor materials for transistors. Patent Document 4 discloses a technology for manufacturing a large display device by arranging a plurality of display panels.

[專利文獻1]日本專利申請公開第2001-53283號公報 [Patent Document 1] Japanese Patent Application Publication No. 2001-53283

[專利文獻2]日本專利申請公開第2007-123861號公報 [Patent Document 2] Japanese Patent Application Publication No. 2007-123861

[專利文獻3]日本專利申請公開第2007-96055號公報 [Patent Document 3] Japanese Patent Application Publication No. 2007-96055

[專利文獻4]日本專利申請公開第2015-180924號公報 [Patent Document 4] Japanese Patent Application Publication No. 2015-180924

另外，將多個顯示面板排列而用作大顯示區域的顯示裝置因各顯示面板的特性偏差而容易被看到顯示面板之間的邊界。 In addition, in a display device in which a plurality of display panels are arranged to form a large display area, boundaries between the display panels are easily visible due to differences in characteristics of each display panel.

設置在顯示面板中的像素的數量越多，該顯示面板所包括的電晶體及顯示元件的數量越多。因此，因電晶體的特性偏差及顯示元件的特性偏差而發生的顯示面板上顯示影像時的不均勻惡化。 The greater the number of pixels provided in a display panel, the greater the number of transistors and display elements included in the display panel. Therefore, unevenness in image display on the display panel caused by variation in characteristics of transistors and display elements worsens.

本發明的一個實施方式的目的之一是提供一種顯示品質高的顯示裝置。本發明的一個實施方式的目的之一是提供一種顯示不均勻得到改善的顯示裝置。本發明的一個實施方式的目的之一是提供一種解析度高的顯示裝置。本發明的一個實施方式的目的之一是提供一種包括大型顯示區域的顯示裝置。本發明的一個實施方式的目的之一是提供一種能夠以高圖框頻率工作的顯示裝置。本發明的一個實施方式的目的之一是提供一種功耗低的顯示裝置。本發明的一個實施方式的目的之一是提供一種薄型顯示裝置。本發明的一個實施方式的目的之一是提供一種具有撓性的顯示裝置。本發明的一個實施方式的目的之一是提供一種視角大的顯示裝置。本發明的一個實施方式的目的之一是提供一種使用小型製造裝置可以製造的顯示裝置。本發明的一個實施方式的目的之一是提供一種廉價的顯示裝置。本發明的一個實施方式的目的之一是提供一種可靠性高的顯示裝置。本發明的一個實施方式的目的之一是提供一種新穎的顯示裝置。本發明的一個實施方式的目的之一是提供一種新穎的半導體裝置等。 One of the objects of an embodiment of the present invention is to provide a display device with high display quality. One object of an embodiment of the present invention is to provide a display device with improved display unevenness. One of the objects of an embodiment of the present invention is to provide a display device with high resolution. One of the objects of an embodiment of the present invention is to provide a display device including a large display area. One of the objects of an embodiment of the present invention is to provide a display device capable of operating at a high frame frequency. One of the objects of an embodiment of the present invention is to provide a display device with low power consumption. One of the objects of an embodiment of the present invention is to provide a thin display device. One of the objects of an embodiment of the present invention is to provide a flexible display device. One of the objects of an embodiment of the present invention is to provide a display device with a large viewing angle. One of the objects of an embodiment of the present invention is to provide a display device that can be manufactured using a small-scale manufacturing device. One of the objects of an embodiment of the present invention is to provide an inexpensive display device. One of the objects of an embodiment of the present invention is to provide a display device with high reliability. One of the objects of an embodiment of the present invention is to provide a novel display device. One of the objects of one embodiment of the present invention is to provide a novel semiconductor device and the like.

本發明的一個實施方式的目的之一是提供一種顯示品質高的顯示裝置的工作方法。本發明的一個實施方式的目的之一是提供一種顯示不均勻得到改善的顯示裝置的工作方法。本發明的一個實施方式的目的之一是提供一種解析度高的顯示裝置的工作方法。本發明的一個實施方式的目的之一是提供一種包括大型顯示區域的顯示裝置的工作方法。本發明的一個實施方式的目的之一是提供一種能夠以高圖框頻率工作的顯示裝置的工作方法。本發明的一個實施方式的目的之一是提供一種功耗低的顯示裝置的工作方法。本發明的一個實施方式的目的之一是提供一種薄型顯示裝置的工作方法。本發明的一個實施 方式的目的之一是提供一種具有撓性的顯示裝置的工作方法。本發明的一個實施方式的目的之一是提供一種視角大的顯示裝置的工作方法。本發明的一個實施方式的目的之一是提供一種使用小型製造裝置可以製造的顯示裝置的工作方法。本發明的一個實施方式的目的之一是提供一種廉價的顯示裝置的工作方法。本發明的一個實施方式的目的之一是提供一種可靠性高的顯示裝置的工作方法。本發明的一個實施方式的目的之一是提供一種新穎的顯示裝置的工作方法。本發明的一個實施方式的目的之一是提供一種新穎的半導體裝置等的工作方法。 One of the objects of an embodiment of the present invention is to provide a working method of a display device with high display quality. One of the objects of an embodiment of the present invention is to provide an operating method of a display device in which display unevenness is improved. One of the objects of an embodiment of the present invention is to provide a working method of a display device with high resolution. One of the objects of an embodiment of the present invention is to provide a working method of a display device including a large display area. One of the objects of an embodiment of the present invention is to provide an operating method of a display device capable of operating at a high frame frequency. One of the objects of an embodiment of the present invention is to provide a working method of a display device with low power consumption. One of the objects of an embodiment of the present invention is to provide a working method of a thin display device. One of the objects of an embodiment of the present invention is to provide a working method of a flexible display device. One of the objects of an embodiment of the present invention is to provide a working method of a display device with a large viewing angle. One of the objects of an embodiment of the present invention is to provide a working method of a display device that can be manufactured using a small-scale manufacturing device. One of the objects of an embodiment of the present invention is to provide an inexpensive working method of a display device. One of the objects of an embodiment of the present invention is to provide a highly reliable working method of a display device. One of the objects of an embodiment of the present invention is to provide a novel working method of a display device. One of the objects of one embodiment of the present invention is to provide a novel operating method of a semiconductor device or the like.

注意，這些目的的記載不妨礙其他目的的存在。本發明的一個實施方式並不需要實現所有上述目的。可以從說明書、圖式、申請專利範圍的描述中抽取上述目的外的目的。 Note that the recording of these purposes does not prevent the existence of other purposes. It is not necessary for an embodiment of the invention to achieve all of the above objectives. Purposes other than the above-mentioned purposes can be extracted from the description of the specification, drawings, and patent application scope.

本發明的一個實施方式是一種顯示裝置的工作方法，該顯示裝置包括將第一像素排列為矩陣狀的第一像素部及將第二像素排列為矩陣狀的第二像素部，其中形成具有校正顯示在第一像素部的影像的功能的第一校正濾波器及具有校正顯示在第二像素部的影像的功能的第二校正濾波器，對第一校正濾波器的濾波值和第二校正濾波器的濾波值進行比較，並且根據比較結果對第一校正濾波器的濾波值進行修正。 One embodiment of the present invention is a working method of a display device. The display device includes a first pixel portion in which first pixels are arranged in a matrix and a second pixel portion in which second pixels are arranged in a matrix, wherein a correction function is formed. The first correction filter has the function of correcting the image displayed in the first pixel part and the second correction filter has the function of correcting the image displayed in the second pixel part. The filter value of the first correction filter and the second correction filter The filter value of the first correction filter is compared, and the filter value of the first correction filter is corrected according to the comparison result.

或者，本發明的一個實施方式是一種顯示裝置的工作方法，該顯示裝置包括將m行n列(m、n為2以上的整數)的第一像素排列為矩陣狀的第一像素部及將m行n列的第二像素排列為矩陣狀的第二像素部，第m行的第一像素和第1行的第二像素鄰接，其中形成具有校正顯示在第一像素部的影像的功能的第一校正濾波器及具有校正顯示在第二像素部的影像的功能的第二校正濾 波器，第一校正濾波器具有與第一像素對應的濾波值，第二校正濾波器具有與第二像素對應的濾波值，對對應於設置在與第二像素部的邊界部中的第一像素的濾波值的平均值和對應於設置在與第一像素部的邊界部中的第二像素的濾波值的平均值進行比較，並且根據比較結果，對第一校正濾波器的濾波值進行修正。 Alternatively, one embodiment of the present invention is a method of operating a display device including a first pixel portion in which first pixels in m rows and n columns (m and n are integers of 2 or more) are arranged in a matrix and The second pixels in m rows and n columns are arranged in a matrix-like second pixel part. The first pixels in the m row are adjacent to the second pixels in the 1st row, and a pixel having the function of correcting the image displayed in the first pixel part is formed. A first correction filter and a second correction filter having a function of correcting the image displayed in the second pixel part. The first correction filter has a filter value corresponding to the first pixel, and the second correction filter has a filter value corresponding to the second pixel. The corresponding filter value is an average of the filter values corresponding to the first pixel provided in the boundary part with the second pixel part and the filter value corresponding to the second pixel provided in the boundary part with the first pixel part The average values are compared, and the filter value of the first correction filter is corrected according to the comparison result.

或者，也可以在上述方式中，藉由對第一像素的多個灰階值進行從第一像素發射的光的亮度的測定來得到從第一像素發射的光的亮度和第一像素的灰階值的對應關係的資料，並且藉由在第一像素部顯示預定的灰階值的影像並對從第一像素發射的光的亮度進行測定來得到亮度資料，然後，使用對應關係的資料及亮度資料形成第一校正濾波器。 Alternatively, in the above manner, the brightness of the light emitted from the first pixel and the gray level of the first pixel can be obtained by measuring the brightness of the light emitted from the first pixel on a plurality of gray scale values of the first pixel. The data of the correspondence relationship between the level values, and the brightness data is obtained by displaying an image with a predetermined gray level value in the first pixel part and measuring the brightness of the light emitted from the first pixel, and then using the data of the correspondence relationship and The luminance data forms a first correction filter.

或者，本發明的一個實施方式是一種顯示裝置的工作方法，該顯示裝置包括將第一像素排列為矩陣狀的第一像素部及將第二像素排列為矩陣狀的第二像素部，其中將第一影像顯示在第一像素部且將第二影像顯示在第二像素部，對從第一像素發射的光的亮度和從第二像素發射的光的亮度進行比較，並且根據比較結果校正從第一像素發射的光的亮度。 Alternatively, one embodiment of the present invention is a method of operating a display device, which includes a first pixel portion in which first pixels are arranged in a matrix, and a second pixel portion in which second pixels are arranged in a matrix, wherein The first image is displayed on the first pixel part and the second image is displayed on the second pixel part, the brightness of the light emitted from the first pixel and the brightness of the light emitted from the second pixel are compared, and the correction is performed based on the comparison result. The brightness of the light emitted by the first pixel.

或者，本發明的一個實施方式是一種顯示裝置的工作方法，該顯示裝置包括將m行n列(m、n為2以上的整數)的第一像素排列為矩陣狀的第一像素部及將m行n列的第二像素排列為矩陣狀的第二像素部，第m行的第一像素和第1行的第二像素鄰接，其中將第一影像顯示在第一像素部且將第二影像顯示在第二像素部，對從設置在與第二像素部的邊界部中的第一像素發射的光的亮度的平均值和從設置在與第一像素部的邊界部中的第二像素發射的光的亮度的平均值進行比較，並且根據比較結果校正從第一像素發射的光的亮度。 Alternatively, one embodiment of the present invention is a method of operating a display device including a first pixel portion in which first pixels in m rows and n columns (m and n are integers of 2 or more) are arranged in a matrix and The second pixels in m rows and n columns are arranged in a matrix-like second pixel part. The first pixels in the m row are adjacent to the second pixels in the 1st row. The first image is displayed in the first pixel part and the second pixel part is displayed in the second pixel part. The image is displayed in the second pixel part, and the average value of the brightness of the light emitted from the first pixel provided in the boundary part with the second pixel part is calculated from the average value of the brightness of the light emitted from the second pixel provided in the boundary part with the first pixel part. The average values of the brightness of the emitted light are compared, and the brightness of the light emitted from the first pixel is corrected based on the comparison result.

或者，也可以在上述方式中，在將第一影像顯示在第一像素部且將第二影像顯示在第二像素部之前，藉由對第一像素的多個灰階值進行從第一像素發射的光的亮度的測定來得到從第一像素發射的光的亮度和第一像素的灰階值的對應關係的資料，藉由將預定的灰階值的影像顯示在第一像素部並對從第一像素發射的光的亮度進行測定來得到亮度資料，使用對應關係的資料和亮度資料形成校正濾波器，並且第一影像是使用校正濾波器校正了的影像。 Alternatively, in the above manner, before displaying the first image in the first pixel part and displaying the second image in the second pixel part, by performing a transformation on the plurality of grayscale values of the first pixel from the first pixel The brightness of the emitted light is measured to obtain data on the correspondence between the brightness of the light emitted from the first pixel and the gray scale value of the first pixel, by displaying an image with a predetermined gray scale value on the first pixel part and The brightness of the light emitted from the first pixel is measured to obtain brightness data, the correspondence data and the brightness data are used to form a correction filter, and the first image is an image corrected using the correction filter.

或者，在上述方式中，預定的灰階值的影像也可以是所有的第一像素的灰階值相同的影像。 Alternatively, in the above method, the image with the predetermined grayscale value may also be an image in which all the first pixels have the same grayscale value.

或者，本發明的一個實施方式是一種顯示裝置，包括像素部及處理部，其中在像素部中將像素排列為矩陣狀，像素包括顯示元件及記憶體電路，處理部具有根據由顯示元件顯示的影像得到的亮度資料形成校正濾波器的功能，並且記憶體電路具有保持校正濾波器的功能。 Alternatively, one embodiment of the present invention is a display device including a pixel unit and a processing unit, wherein the pixels are arranged in a matrix, the pixels include display elements and memory circuits, and the processing unit has a function according to the image displayed by the display element. The brightness data obtained from the image forms the function of the correction filter, and the memory circuit has the function of maintaining the correction filter.

或者，也可以在上述方式中，像素包括顯示元件、第一電晶、體、第二電晶體、第三電晶體、第四電晶體、第一電容器及第二電容器，第一電晶體的源極和汲極中的一個與第一電容器的一個電極電連接，第一電容器的另一個電極與第二電晶體的源極和汲極中的一個電連接，第二電晶體的源極和汲極中的一個與第三電晶體的閘極電連接，第三電晶體的閘極與第二電容器的一個電極電連接，第二電容器的另一個電極與第三電晶體的源極和汲極中的一個電連接，第三電晶體的源極和汲極中的一個與第四電晶體的源極和汲極中的一個電連接，並且第四電晶體的源極和汲極中的另一個與顯示充件的一個電極電連接。 Alternatively, in the above manner, the pixel may include a display element, a first transistor, a second transistor, a third transistor, a fourth transistor, a first capacitor and a second capacitor. The source of the first transistor One of the first electrode and the drain electrode is electrically connected to one electrode of the first capacitor, the other electrode of the first capacitor is electrically connected to one of the source electrode and the drain electrode of the second transistor, and the source electrode and drain electrode of the second transistor are electrically connected. One of the electrodes is electrically connected to the gate of the third transistor, the gate of the third transistor is electrically connected to one electrode of the second capacitor, and the other electrode of the second capacitor is connected to the source and drain of the third transistor. One of the source electrode and the drain electrode of the third transistor is electrically connected to one of the source electrode and the drain electrode of the fourth transistor, and the other of the source electrode and the drain electrode of the fourth transistor is electrically connected. One is electrically connected to an electrode of the display charger.

或者，在上述方式中，顯示元件也可以是有機EL元件。 Alternatively, in the above aspect, the display element may be an organic EL element.

或者，在上述方式中，第二電晶體也可以在通道形成區域含有金屬氧化物，並且金屬氧化物也可以具有In、Zn、M(M為Al、Ti、Ga、Sn、Y、Zr、La、Ce、Nd或Hf)。 Alternatively, in the above method, the second transistor may contain a metal oxide in the channel formation region, and the metal oxide may also contain In, Zn, M (M is Al, Ti, Ga, Sn, Y, Zr, La , Ce, Nd or Hf).

藉由本發明的一個實施方式，可以提供一種顯示品質高的顯示裝置。藉由本發明的一個實施方式，可以提供一種顯示不均勻得到改善的顯示裝置。藉由本發明的一個實施方式，可以提供一種解析度高的顯示裝置。藉由本發明的一個實施方式，可以提供一種包括大型顯示區域的顯示裝置。藉由本發明的一個實施方式，可以提供一種能夠以高圖框頻率工作的顯示裝置。藉由本發明的一個實施方式，可以提供一種功耗低的顯示裝置。藉由本發明的一個實施方式，可以提供一種薄型顯示裝置。藉由本發明的一個實施方式，可以提供一種具有撓性的顯示裝置。藉由本發明的一個實施方式，可以提供一種視角大的顯示裝置。藉由本發明的一個實施方式，可以提供一種使用小型製造裝置可以製造的顯示裝置。藉由本發明的一個實施方式，可以提供一種廉價的顯示裝置。藉由本發明的一個實施方式，可以提供一種可靠性高的顯示裝置。藉由本發明的一個實施方式，可以提供一種新穎的顯示裝置。藉由本發明的一個實施方式，可以提供一種新穎的半導體裝置等。 According to one embodiment of the present invention, a display device with high display quality can be provided. According to one embodiment of the present invention, a display device in which display unevenness is improved can be provided. According to one embodiment of the present invention, a display device with high resolution can be provided. According to an embodiment of the present invention, a display device including a large display area can be provided. According to an embodiment of the present invention, a display device capable of operating at a high frame frequency can be provided. Through an embodiment of the present invention, a display device with low power consumption can be provided. According to an embodiment of the present invention, a thin display device can be provided. According to an embodiment of the present invention, a flexible display device can be provided. According to an embodiment of the present invention, a display device with a large viewing angle can be provided. According to one embodiment of the present invention, a display device that can be manufactured using a small manufacturing device can be provided. According to an embodiment of the present invention, a low-cost display device can be provided. According to one embodiment of the present invention, a display device with high reliability can be provided. Through an embodiment of the present invention, a novel display device can be provided. According to one embodiment of the present invention, a novel semiconductor device or the like can be provided.

藉由本發明的一個實施方式，可以提供一種顯示品質高的顯示裝置的工作方法。藉由本發明的一個實施方式，可以提供一種顯示不均勻得到改善的顯示裝置的工作方法。藉由本發明的一個實施方式，可以提供一種解析度高的顯示裝置的工作方法。藉由本發明的一個實施方式，可以提供一種包括大型顯示區域的顯示裝置的工作方法。藉由本發明的一個實施方式，可以提供一種能夠以高圖框頻率工作的顯示裝置的工作方法。藉由本發明的一個實施方 式，可以提供一種功耗低的顯示裝置的工作方法。藉由本發明的一個實施方式，可以提供一種薄型顯示裝置的工作方法。藉由本發明的一個實施方式，可以提供一種具有撓性的顯示裝置的工作方法。藉由本發明的一個實施方式，可以提供一種視角大的顯示裝置的工作方法。藉由本發明的一個實施方式，可以提供一種使用小型製造裝置可以製造的顯示裝置的工作方法。藉由本發明的一個實施方式，可以提供一種廉價的顯示裝置的工作方法。藉由本發明的一個實施方式，可以提供一種可靠性高的顯示裝置的工作方法。藉由本發明的一個實施方式，可以提供一種新穎的顯示裝置的工作方法。藉由本發明的一個實施方式，可以提供一種新穎的半導體裝置等的工作方法。 According to an embodiment of the present invention, a working method of a display device with high display quality can be provided. According to an embodiment of the present invention, a working method of a display device in which display unevenness is improved can be provided. According to an embodiment of the present invention, a working method of a high-resolution display device can be provided. According to an embodiment of the present invention, a working method of a display device including a large display area can be provided. Through an embodiment of the present invention, an operating method of a display device capable of operating at a high frame frequency can be provided. Through an embodiment of the present invention, a working method of a display device with low power consumption can be provided. According to an embodiment of the present invention, a working method of a thin display device can be provided. According to an embodiment of the present invention, a working method of a flexible display device can be provided. According to an embodiment of the present invention, a working method of a display device with a large viewing angle can be provided. According to one embodiment of the present invention, a method for operating a display device that can be manufactured using a small manufacturing device can be provided. Through an embodiment of the present invention, a low-cost working method of a display device can be provided. According to an embodiment of the present invention, a highly reliable working method of a display device can be provided. Through an embodiment of the present invention, a novel working method of a display device can be provided. According to an embodiment of the present invention, a novel operating method of a semiconductor device or the like can be provided.

注意，這些目的的記載不妨礙其他目的的存在。本發明的一個實施方式並不需要實現所有上述目的。可以從說明書、圖式、申請專利範圍的描述中抽取上述目的外的目的。 Note that the recording of these purposes does not prevent the existence of other purposes. It is not necessary for an embodiment of the invention to achieve all of the above objectives. Purposes other than the above-mentioned purposes can be extracted from the description of the specification, drawings, and patent application scope.

10A‧‧‧顯示裝置 10A‧‧‧Display device

10B‧‧‧顯示裝置 10B‧‧‧Display device

20A‧‧‧顯示部 20A‧‧‧Display part

20B‧‧‧顯示部 20B‧‧‧Display part

20C‧‧‧顯示部 20C‧‧‧Display part

21‧‧‧像素部 21‧‧‧pixel part

21A‧‧‧像素部 21A‧‧‧Pixel part

21B‧‧‧像素部 21B‧‧‧pixel part

22‧‧‧掃描線驅動電路 22‧‧‧Scan line driver circuit

22A‧‧‧掃描線驅動電路 22A‧‧‧Scan line driver circuit

22B‧‧‧掃描線驅動電路 22B‧‧‧Scan line driver circuit

23‧‧‧信號線驅動電路 23‧‧‧Signal line driver circuit

23A‧‧‧信號線驅動電路 23A‧‧‧signal line driver circuit

23B‧‧‧信號線驅動電路 23B‧‧‧Signal line driver circuit

24A‧‧‧時序控制器 24A‧‧‧Sequence controller

24B‧‧‧時序控制器 24B‧‧‧Sequence Controller

25‧‧‧像素 25‧‧‧pixels

26‧‧‧像素 26‧‧‧pixels

27‧‧‧區域 27‧‧‧Area

28A‧‧‧邊界部 28A‧‧‧Border Department

28B‧‧‧邊界部 28B‧‧‧Border Department

28C‧‧‧邊界部 28C‧‧‧Border Department

28D‧‧‧邊界部 28D‧‧‧Border

29‧‧‧顯示區域 29‧‧‧Display area

29A‧‧‧邊界部 29A‧‧‧Border Department

29B‧‧‧邊界部 29B‧‧‧Border Department

29C‧‧‧邊界部 29C‧‧‧Border Department

29D‧‧‧邊界部 29D‧‧‧Border

29E‧‧‧邊界部 29E‧‧‧Border Department

29F‧‧‧邊界部 29F‧‧‧Border

29G‧‧‧邊界部 29G‧‧‧Border Department

29H‧‧‧邊界部 29H‧‧‧Border Department

30A‧‧‧信號生成部 30A‧‧‧Signal generation part

30B‧‧‧信號生成部 30B‧‧‧Signal Generation Department

31‧‧‧前端部 31‧‧‧Front end

32‧‧‧解碼器 32‧‧‧Decoder

33‧‧‧處理部 33‧‧‧Processing Department

34‧‧‧接收部 34‧‧‧Receiving Department

35‧‧‧介面 35‧‧‧Interface

36‧‧‧控制部 36‧‧‧Control Department

40A‧‧‧處理部 40A‧‧‧Processing Department

40B‧‧‧處理部 40B‧‧‧Processing Department

45A‧‧‧分割部 45A‧‧‧Division part

45B‧‧‧分割部 45B‧‧‧Division Department

50‧‧‧演算處理裝置 50‧‧‧Calculation processing device

72‧‧‧區域 72‧‧‧Area

73‧‧‧區域 73‧‧‧Area

74‧‧‧FPC 74‧‧‧FPC

101‧‧‧電晶體 101‧‧‧Transistor

102‧‧‧電晶體 102‧‧‧Transistor

103‧‧‧電容器 103‧‧‧Capacitor

104‧‧‧發光元件 104‧‧‧Light-emitting components

111‧‧‧電晶體 111‧‧‧Transistor

112‧‧‧電晶體 112‧‧‧Transistor

113‧‧‧電容器 113‧‧‧Capacitor

121‧‧‧電晶體 121‧‧‧Transistor

122‧‧‧電晶體 122‧‧‧Transistor

123‧‧‧電晶體 123‧‧‧Transistor

124‧‧‧電容器 124‧‧‧Capacitor

125‧‧‧電容器 125‧‧‧Capacitor

126‧‧‧液晶元件 126‧‧‧LCD element

128‧‧‧電位供應線 128‧‧‧Potential supply line

129‧‧‧共同佈線 129‧‧‧Common wiring

132‧‧‧共同佈線 132‧‧‧Common wiring

133‧‧‧共同佈線 133‧‧‧Common wiring

170‧‧‧發光元件 170‧‧‧Light-emitting element

180‧‧‧液晶元件 180‧‧‧LCD element

215‧‧‧顯示部 215‧‧‧Display part

221‧‧‧掃描線驅動電路 221‧‧‧Scan line driver circuit

229A‧‧‧邊界部 229A‧‧‧Border Department

229B‧‧‧邊界部 229B‧‧‧Border Department

229C‧‧‧邊界部 229C‧‧‧Border Department

229D‧‧‧邊界部 229D‧‧‧Border

251‧‧‧電晶體 251‧‧‧Transistor

433‧‧‧電容器 433‧‧‧Capacitor

444‧‧‧電晶體 444‧‧‧Transistor

445‧‧‧節點 445‧‧‧Node

446‧‧‧電晶體 446‧‧‧Transistor

447‧‧‧節點 447‧‧‧Node

723‧‧‧電極 723‧‧‧Electrode

726‧‧‧絕緣層 726‧‧‧Insulating layer

728‧‧‧絕緣層 728‧‧‧Insulating layer

729‧‧‧絕緣層 729‧‧‧Insulation layer

741‧‧‧絕緣層 741‧‧‧Insulation layer

742‧‧‧半導體層 742‧‧‧Semiconductor layer

744a‧‧‧電極 744a‧‧‧Electrode

744b‧‧‧電極 744b‧‧‧Electrode

746‧‧‧電極 746‧‧‧Electrode

771‧‧‧基板 771‧‧‧Substrate

772‧‧‧絕緣層 772‧‧‧Insulating layer

810‧‧‧電晶體 810‧‧‧Transistor

811‧‧‧電晶體 811‧‧‧Transistor

820‧‧‧電晶體 820‧‧‧Transistor

821‧‧‧電晶體 821‧‧‧Transistor

825‧‧‧電晶體 825‧‧‧Transistor

826‧‧‧電晶體 826‧‧‧Transistor

842‧‧‧電晶體 842‧‧‧Transistor

843‧‧‧電晶體 843‧‧‧Transistor

844‧‧‧電晶體 844‧‧‧Transistor

845‧‧‧電晶體 845‧‧‧Transistor

846‧‧‧電晶體 846‧‧‧Transistor

847‧‧‧電晶體 847‧‧‧Transistor

4001‧‧‧基板 4001‧‧‧Substrate

4005‧‧‧密封劑 4005‧‧‧Sealant

4006‧‧‧基板 4006‧‧‧Substrate

4008‧‧‧液晶層 4008‧‧‧LCD layer

4010‧‧‧電晶體 4010‧‧‧Transistor

4011‧‧‧電晶體 4011‧‧‧Transistor

4013‧‧‧液晶元件 4013‧‧‧LCD element

4014‧‧‧佈線 4014‧‧‧Wiring

4015‧‧‧電極 4015‧‧‧Electrode

4017‧‧‧電極 4017‧‧‧Electrode

4018‧‧‧FPC 4018‧‧‧FPC

4019‧‧‧各向異性導電層 4019‧‧‧Anisotropic conductive layer

4020‧‧‧電容器 4020‧‧‧Capacitor

4021‧‧‧電極 4021‧‧‧Electrode

4030‧‧‧電極層 4030‧‧‧Electrode layer

4031‧‧‧電極層 4031‧‧‧Electrode layer

4032‧‧‧絕緣層 4032‧‧‧Insulation layer

4033‧‧‧絕緣層 4033‧‧‧Insulation layer

4035‧‧‧間隔物 4035‧‧‧Spacer

4102‧‧‧絕緣層 4102‧‧‧Insulation layer

4103‧‧‧絕緣層 4103‧‧‧Insulation layer

4104‧‧‧絕緣層 4104‧‧‧Insulation layer

4110‧‧‧絕緣層 4110‧‧‧Insulation layer

4111‧‧‧絕緣層 4111‧‧‧Insulating layer

4112‧‧‧絕緣層 4112‧‧‧Insulation layer

4131‧‧‧彩色層 4131‧‧‧Color Layer

4132‧‧‧遮光層 4132‧‧‧Light shielding layer

4133‧‧‧絕緣層 4133‧‧‧Insulating layer

4510‧‧‧分隔壁 4510‧‧‧Partition wall

4511‧‧‧發光層 4511‧‧‧Light-emitting layer

4513‧‧‧發光元件 4513‧‧‧Light-emitting element

4514‧‧‧填充材料 4514‧‧‧Filling material

7000‧‧‧顯示部 7000‧‧‧Display part

7100‧‧‧電視機 7100‧‧‧TV

7101‧‧‧外殼 7101‧‧‧Shell

7103‧‧‧支架 7103‧‧‧Bracket

7111‧‧‧遙控器 7111‧‧‧remote control

7200‧‧‧筆記型個人電腦 7200‧‧‧Notebook PC

7211‧‧‧外殼 7211‧‧‧Shell

7212‧‧‧鍵盤 7212‧‧‧Keyboard

7213‧‧‧指向裝置 7213‧‧‧Pointing device

7214‧‧‧外部連接埠 7214‧‧‧External port

7300‧‧‧數位看板 7300‧‧‧Digital signage

7301‧‧‧外殼 7301‧‧‧Shell

7303‧‧‧揚聲器 7303‧‧‧Speaker

7311‧‧‧資訊終端設備 7311‧‧‧Information terminal equipment

7400‧‧‧數位看板 7400‧‧‧Digital Signage

7401‧‧‧柱子 7401‧‧‧Pillar

7411‧‧‧資訊終端設備 7411‧‧‧Information terminal equipment

圖1A和圖1B是示出顯示裝置的一個例子的圖；圖2是示出顯示部的一個例子的圖；圖3A和圖3B是示出顯示面板的一個例子的圖；圖4A和圖4B是示出顯示裝置的一個例子的圖；圖5A和圖5B是示出顯示裝置的工作的一個例子的圖；圖6A至圖6C是示出顯示裝置的工作的一個例子的圖；圖7A至圖7C是示出顯示裝置的工作的一個例子的圖； 圖8A和圖8B是示出像素的一個例子的圖；圖9是示出顯示裝置的一個例子的圖；圖10是示出顯示部的一個例子的圖；圖11是示出像素的一個例子的圖；圖12A和圖12B是示出像素的工作的一個例子的圖；圖13是示出像素的一個例子的圖；圖14A和圖14B是示出像素的工作的一個例子的圖；圖15是示出顯示裝置的工作的一個例子的圖；圖16A-1、圖16A-2、圖16B-1及圖16B-2是示出顯示裝置的工作的一個例子的圖。 1A and 1B are diagrams showing an example of a display device; FIG. 2 is a diagram showing an example of a display unit; FIGS. 3A and 3B are diagrams showing an example of a display panel; FIGS. 4A and 4B is a diagram showing an example of the display device; FIGS. 5A and 5B are diagrams showing an example of the operation of the display device; FIGS. 6A to 6C are diagrams showing an example of the operation of the display device; FIGS. 7A to 7C are diagrams showing an example of the operation of the display device; FIG. 7C is a diagram showing an example of the operation of the display device; FIGS. 8A and 8B are diagrams showing an example of a pixel; FIG. 9 is a diagram showing an example of the display device; FIG. 10 is a diagram showing a display unit FIG. 11 is a diagram showing an example of a pixel; FIG. 12A and FIG. 12B are diagrams showing an example of the operation of a pixel; FIG. 13 is a diagram showing an example of a pixel; FIG. 14A and FIG. FIG. 14B is a diagram showing an example of the operation of a pixel; FIG. 15 is a diagram showing an example of the operation of a display device; FIG. 16A-1, FIG. 16A-2, FIG. 16B-1, and FIG. 16B-2 are diagrams showing A diagram showing an example of the operation of the device.

圖17A至圖17C是示出顯示裝置的工作的一個例子的圖；圖18A和圖18B是示出顯示裝置的一個例子的圖；圖19A1、圖19A2、圖19B1、圖19B2、圖19C1及圖19C2是示出電晶體的一個例子的圖；圖20A1、圖20A2、圖20B1、圖20B2、圖20C1及圖20C2是示出電晶體的一個例子的圖；圖21A1、圖21A2、圖21B1、圖21B2、圖21C1及圖21C2是示出電晶體的一個例子的圖；圖22A1、圖22A2、圖22B1、圖22B2、圖22C1及圖22C2是示出電晶體的一個例子的圖；圖23A至圖23D是示出電子裝置的一個例子的圖；圖24是示出在實施例1中使用的顯示裝置的圖； 圖25A和圖25B是示出實施例1的顯示結果的照片；圖26A和圖26B是示出實施例2的亮度資料的照片。 17A to 17C are diagrams showing an example of the operation of the display device; FIGS. 18A and 18B are diagrams showing an example of the display device; FIGS. 19A1, 19A2, 19B1, 19B2, 19C1 and FIG. 19C2 is a diagram showing an example of a transistor; FIGS. 20A1, 20A2, 20B1, 20B2, 20C1, and 20C2 are diagrams showing an example of a transistor; FIGS. 21A1, 21A2, 21B1, and FIG. 21B2, FIG. 21C1, and FIG. 21C2 are diagrams showing an example of a transistor; FIG. 22A1, FIG. 22A2, FIG. 22B1, FIG. 22B2, FIG. 22C1, and FIG. 22C2 are diagrams showing an example of a transistor; FIG. 23A to FIG. 23D is a diagram showing an example of an electronic device; FIG. 24 is a diagram showing a display device used in Embodiment 1; FIGS. 25A and 25B are photographs showing display results of Embodiment 1; FIG. 26A and FIG. 26B is a photograph showing the brightness data of Example 2.

本發明的選擇圖為圖5A和圖5B。 The selection diagrams of the present invention are Figure 5A and Figure 5B.

參照圖式對實施方式進行詳細說明。注意，本發明不侷限於以下說明，而所屬技術領域的通常知識者可以很容易地理解一個事實就是其方式及詳細內容在不脫離本發明的精神及其範圍的情況下可以被變換為各種各樣的形式。因此，本發明不應該被解釋為僅限定在以下所示的實施方式所記載的內容中。 The embodiment will be described in detail with reference to the drawings. Note that the present invention is not limited to the following description, but those of ordinary skill in the art can easily understand the fact that the manner and details thereof can be transformed into various forms without departing from the spirit and scope of the present invention. kind of form. Therefore, the present invention should not be construed as being limited only to the description of the embodiments shown below.

注意，在下面說明的發明結構中，在不同的圖式中共同使用相同的元件符號來表示相同的部分或具有相同功能的部分，而省略反復說明。此外，當表示具有相同功能的部分時有時使用相同的陰影線，而不特別附加元件符號。 Note that in the structure of the invention described below, the same element symbols are commonly used in different drawings to represent the same parts or parts having the same functions, and repeated descriptions are omitted. In addition, when representing parts having the same function, the same hatching is sometimes used without specifically appending the component symbol.

另外，為了便於理解，有時圖式中示出的各構成的位置、大小及範圍等並不表示其實際的位置、大小及範圍等。因此，所公開的發明不一定侷限於圖式所公開的位置、大小、範圍等。 In order to facilitate understanding, the position, size, range, etc. of each component shown in the drawings may not represent the actual position, size, range, etc. Therefore, the disclosed invention is not necessarily limited to the position, size, scope, etc. disclosed in the drawings.

另外，根據情況或狀態，可以互相調換“膜”和“層”。例如，可以將“導電層”變換為“導電膜”。此外，可以將“絕緣膜”變換為“絕緣層”。 In addition, "film" and "layer" may be interchanged depending on the situation or state. For example, "conductive layer" can be converted into "conductive film". In addition, "insulating film" can be converted into "insulating layer".

在本說明書等中，金屬氧化物(metal oxide)是指廣義上的金屬的氧化物。金屬氧化物被分類為氧化物絕緣體、氧化物導電體(包括透明氧 化物導電體)和氧化物半導體(Oxide Semiconductor，也可以簡稱為OS)等。例如，在將金屬氧化物用於電晶體的半導體層的情況下，有時將該金屬氧化物稱為氧化物半導體。換言之，可以將OS FET稱為包含金屬氧化物或氧化物半導體的電晶體。 In this specification and the like, metal oxide refers to a metal oxide in a broad sense. Metal oxides are classified into oxide insulators, oxide conductors (including transparent oxide conductors), and oxide semiconductors (Oxide Semiconductor, also referred to as OS). For example, when a metal oxide is used for a semiconductor layer of a transistor, the metal oxide is sometimes called an oxide semiconductor. In other words, the OS FET can be called a transistor containing a metal oxide or an oxide semiconductor.

此外，在本說明書等中，有時將包含氮的金屬氧化物也稱為金屬氧化物(metal oxide)。此外，也可以將包含氮的金屬氧化物稱為金屬氧氮化物(metal oxynitride)。 In addition, in this specification and the like, a metal oxide containing nitrogen may also be called a metal oxide (metal oxide). In addition, a metal oxide containing nitrogen may also be called a metal oxynitride (metal oxynitride).

實施方式1 Embodiment 1

在本實施方式中，參照圖1A至圖17C對本發明的一個實施方式的顯示裝置進行說明。 In this embodiment, a display device according to one embodiment of the present invention will be described with reference to FIGS. 1A to 17C .

本發明的一個實施方式係關於即使排列多個顯示面板來實現較大的顯示區域，顯示面板之間的邊界也不容易被認識到的顯示裝置及其工作方法。 One embodiment of the present invention relates to a display device and an operating method thereof in which boundaries between display panels are not easily recognized even if a plurality of display panels are arranged to realize a larger display area.

<1-1.顯示裝置的結構例子1> <1-1. Structure example of display device 1>

圖1A和圖1B是示出顯示裝置10A的結構例子的方塊圖。 1A and 1B are block diagrams showing a structural example of the display device 10A.

顯示裝置10A具有：利用從外部接收的資料生成影像資料的功能；以及根據該影像資料顯示影像的功能。 The display device 10A has a function of generating image data using data received from the outside, and a function of displaying an image based on the image data.

如圖1A所示，顯示裝置10A包括顯示部20A及信號生成部30A。顯示部20A包括多個顯示面板DP。信號生成部30A具有利用從外部接收的資料生成影像資料的功能。顯示面板DP具有根據該影像資料顯示影像的功能。 As shown in FIG. 1A , the display device 10A includes a display unit 20A and a signal generation unit 30A. The display unit 20A includes a plurality of display panels DP. The signal generating unit 30A has a function of generating video data using data received from the outside. The display panel DP has the function of displaying images based on the image data.

圖1A示出在顯示部20A中將顯示面板DP排列為2行1列的例子。可以分別獨立地控制顯示面板DP的顯示。注意，在顯示部20A中既可以將顯示面板DP排列為3行以上，又可以排列為2列以上。 FIG. 1A shows an example in which the display panels DP are arranged in two rows and one column in the display unit 20A. The display of the display panel DP can be controlled independently. Note that the display panels DP may be arranged in three or more rows or in two or more columns in the display unit 20A.

在本說明書等中，將設置在第p行第q列(p、q為1以上的整數)的顯示面板DP表示為顯示面板DP[p，q]。 In this specification and the like, the display panel DP provided in the p-th row and q-th column (p and q are integers of 1 or more) is expressed as display panel DP[p, q].

藉由排列多個顯示面板DP，可以製造具有較大的顯示區域的顯示部20A。 By arranging a plurality of display panels DP, the display portion 20A having a larger display area can be manufactured.

在圖1B中示出顯示面板DP[1，1]及顯示面板DP[2，1]的結構例子。顯示面板DP[1，1]包括像素部21A、掃描線驅動電路22A(也稱為閘極驅動器)、信號線驅動電路23A(也稱為源極驅動器)及時序控制器24A。顯示面板DP[2，1]包括像素部21B、掃描線驅動電路22B、信號線驅動電路23B及時序控制器24B。信號生成部30A包括前端部31、解碼器32、處理部33、接收部34、介面35、控制部36、處理部40A及分割部45A。 FIG. 1B shows structural examples of display panel DP[1,1] and display panel DP[2,1]. The display panel DP[1,1] includes a pixel portion 21A, a scanning line driving circuit 22A (also called a gate driver), a signal line driving circuit 23A (also called a source driver), and a timing controller 24A. The display panel DP[2,1] includes a pixel portion 21B, a scanning line driving circuit 22B, a signal line driving circuit 23B, and a timing controller 24B. The signal generation part 30A includes a front-end part 31, a decoder 32, a processing part 33, a receiving part 34, an interface 35, a control part 36, a processing part 40A, and a dividing part 45A.

注意，在本說明書等中，有時將設置在本發明的一個實施方式的顯示裝置所包括的顯示部中的像素部，如像素部21A及像素部21B等稱為像素部21。另外，有時將設置在本發明的一個實施方式的顯示裝置所包括的顯示部中的掃描線驅動電路，如掃描線驅動電路22A及掃描線驅動電路22B等稱為掃描線驅動電路22。而且，有時將設置在本發明的一個實施方式的顯示裝置所包括的顯示部中的信號線驅動電路，如信號線驅動電路23A及信號線驅動電路23B等稱為信號線驅動電路23。 Note that in this specification and the like, the pixel portions provided in the display portion included in the display device according to one embodiment of the present invention, such as the pixel portion 21A and the pixel portion 21B, are sometimes referred to as the pixel portion 21 . In addition, the scanning line driving circuits provided in the display unit included in the display device according to one embodiment of the present invention, such as the scanning line driving circuit 22A and the scanning line driving circuit 22B, may be referred to as the scanning line driving circuit 22 . Furthermore, the signal line driving circuits provided in the display unit included in the display device according to one embodiment of the present invention, such as the signal line driving circuit 23A and the signal line driving circuit 23B, may be referred to as the signal line driving circuit 23.

以下說明顯示面板DP及信號生成部30A所包括的各組件。 Each component included in the display panel DP and the signal generation unit 30A will be described below.

像素部21A及像素部21B包括多個像素。像素部21A及像素部21B具有顯示影像的功能。 The pixel portion 21A and the pixel portion 21B include a plurality of pixels. The pixel portion 21A and the pixel portion 21B have a function of displaying images.

像素包括顯示元件。像素具有發射對應於灰階值的亮度的光的功能。根據從掃描線驅動電路22A及信號線驅動電路23A供應的信號控制像素的灰階，由此在像素部21A上顯示指定的影像。另外，根據從掃描線驅動電路22B及信號線驅動電路23B供應的信號控制像素的灰階，由此在像素部21B顯示指定的影像。 Pixels include display elements. The pixel has a function of emitting light corresponding to the brightness of the gray scale value. A specified image is displayed on the pixel portion 21A by controlling the grayscale of the pixel based on the signals supplied from the scanning line driving circuit 22A and the signal line driving circuit 23A. In addition, the grayscale of the pixel is controlled based on the signals supplied from the scanning line driving circuit 22B and the signal line driving circuit 23B, thereby displaying a designated image on the pixel portion 21B.

掃描線驅動電路22A具有將用來選擇像素的信號(也稱為選擇信號)供應給像素部21A的功能。掃描線驅動電路22B具有將選擇信號供應給像素部21B的功能。 The scanning line driver circuit 22A has a function of supplying a signal for selecting a pixel (also referred to as a selection signal) to the pixel portion 21A. The scanning line driver circuit 22B has a function of supplying a selection signal to the pixel portion 21B.

信號線驅動電路23A具有將示出像素所表示的灰階的信號(也稱為影像信號)供應給像素部21A的功能。信號線驅動電路23B具有將影像信號供應給像素部21B的功能。藉由對被供應了選擇信號的像素供應影像信號，該像素發射對應於灰階值的亮度的光，由此在像素部21A及像素部21B顯示指定的影像。 The signal line driving circuit 23A has a function of supplying a signal (also referred to as an image signal) showing the gray scale represented by the pixel to the pixel unit 21A. The signal line driver circuit 23B has a function of supplying an image signal to the pixel portion 21B. By supplying an image signal to the pixel to which the selection signal is supplied, the pixel emits light with brightness corresponding to the gray scale value, thereby displaying a designated image on the pixel portion 21A and the pixel portion 21B.

時序控制器24A具有生成掃描線驅動電路22A及信號線驅動電路23A等所使用的時序信號(時脈信號及啟動脈衝信號等)的功能。時序控制器24B具有生成掃描線驅動電路22B及信號線驅動電路23B等所使用的時序信號的功能。由時序控制器24A生成的時序信號控制從掃描線驅動電路22A輸出選擇信號的時序和從信號線驅動電路23A輸出影像信號的時序中的一個或兩個。由時序控制器24B生成的時序信號控制從掃描線驅動電路22B輸出選擇信號的時序和從信號線驅動電路23B輸出影像信號的時序中的一個或兩個。另外，在顯示面 板DP[1，1]包括多個掃描線驅動電路時，從多個掃描線驅動電路輸出信號的時序被時序控制器24A所生成的時序信號同步。在顯示面板DP[2，1]包括多個掃描線驅動電路時，從多個掃描線驅動電路輸出信號的時序被時序控制器24B所生成的時序信號同步。與此同樣，在顯示面板DP[1，1]包括多個信號線驅動電路時，從信號線驅動電路輸出信號的時序被時序控制器24A所生成的時序信號同步。在顯示面板DP[2，1]包括多個信號線驅動電路時，從信號線驅動電路輸出信號的時序被時序控制器24B所生成的時序信號同步。 The timing controller 24A has a function of generating timing signals (clock signals, start pulse signals, etc.) used by the scanning line driving circuit 22A, the signal line driving circuit 23A, and the like. The timing controller 24B has a function of generating timing signals used by the scanning line driving circuit 22B, the signal line driving circuit 23B, and the like. The timing signal generated by the timing controller 24A controls one or both of the timing of outputting the selection signal from the scanning line driver circuit 22A and the timing of outputting the image signal from the signal line driver circuit 23A. The timing signal generated by the timing controller 24B controls one or both of the timing of outputting the selection signal from the scanning line driver circuit 22B and the timing of outputting the image signal from the signal line driver circuit 23B. In addition, when the display panel DP[1,1] includes a plurality of scanning line driving circuits, the timing of output signals from the plurality of scanning line driving circuits is synchronized by the timing signal generated by the timing controller 24A. When the display panel DP[2,1] includes a plurality of scanning line driving circuits, the timing of output signals from the plurality of scanning line driving circuits is synchronized by the timing signal generated by the timing controller 24B. Similarly, when the display panel DP[1,1] includes a plurality of signal line driver circuits, the timing of output signals from the signal line driver circuits is synchronized by the timing signal generated by the timing controller 24A. When the display panel DP[2,1] includes a plurality of signal line driving circuits, the timing of output signals from the signal line driving circuits is synchronized by the timing signal generated by the timing controller 24B.

前端部31具有接收從外部輸入的信號而適當地進行信號處理的功能。例如，將以指定的方式編碼而調變的廣播信號等輸入到前端部31。前端部31可以具有對所接收的影像信號進行解調、進行類比-數位變換等的功能。另外，前端部31可以具有進行錯誤糾正的功能。將被前端部31接收並經信號處理過的資料輸出到解碼器32。 The tip portion 31 has a function of receiving a signal input from the outside and appropriately processing the signal. For example, a broadcast signal encoded and modulated in a specific manner is input to the front end unit 31 . The front end unit 31 may have functions such as demodulation and analog-to-digital conversion of received video signals. In addition, the front end portion 31 may have an error correction function. The signal-processed data received by the front-end unit 31 is output to the decoder 32 .

解碼器32具有解密被編碼的信號的功能。當輸入到前端部31的廣播信號等所包括的影像資料被壓縮時，利用解碼器32進行解壓縮。例如，解碼器32可以具有進行熵解碼、逆量子化、逆離散餘弦變換(IDCT)或逆離散正弦變換(IDST)等逆正交變換、圖框內預測、圖框間預測等的功能。將藉由解碼器32的解密處理生成的影像資料輸出到處理部33。 The decoder 32 has a function of decrypting the encoded signal. When the video data included in the broadcast signal input to the front-end unit 31 is compressed, the decompression is performed by the decoder 32 . For example, the decoder 32 may have a function of performing entropy decoding, inverse quantization, inverse orthogonal transformation such as inverse discrete cosine transform (IDCT) or inverse discrete sine transform (IDST), intra-frame prediction, inter-frame prediction, and the like. The image data generated by the decryption process of the decoder 32 is output to the processing unit 33 .

處理部33具有對從解碼器32輸入的影像資料進行影像處理而生成第一影像資料SD1並將第一影像資料SD1輸出到處理部40A的功能。 The processing unit 33 has a function of performing image processing on the video data input from the decoder 32 to generate first video data SD1 and outputting the first video data SD1 to the processing unit 40A.

作為影像處理的例子，可以舉出雜訊去除處理、灰階轉換處理、色調校正處理、亮度校正處理等。色調校正處理或亮度校正處理可以使用伽瑪校正等進行。 Examples of image processing include noise removal processing, gray scale conversion processing, hue correction processing, brightness correction processing, and the like. Hue correction processing or brightness correction processing can be performed using gamma correction or the like.

作為雜訊去除處理，可以舉出如下處理：去除各種雜訊諸如產生在文字等的輪廓附近的蚊狀雜訊、產生在高速的動態影像中的塊狀雜訊、以及產生閃爍的隨機雜訊等。 Examples of noise removal processing include processing to remove various noises such as mosquito-like noise that occurs near the outlines of characters, block noise that occurs in high-speed moving images, and random noise that causes flickering. wait.

灰階轉換處理是指將第一影像資料SD1的灰階轉換為對應於顯示部20A的輸出特性的灰階的處理。例如，在增大灰階數時，藉由對以較小的灰階數輸入的影像資料補充並分配與各像素對應的灰階值，可以進行使長條圖平滑化的處理。此外，擴大動態範圍的高動態範圍(HDR)處理也包括在灰階轉換處理中。 The grayscale conversion process refers to a process of converting the grayscale of the first image data SD1 into a grayscale corresponding to the output characteristics of the display unit 20A. For example, when the number of gray scales is increased, the strip chart can be smoothed by supplementing image data input with a smaller number of gray scales and allocating gray scale values corresponding to each pixel. In addition, high dynamic range (HDR) processing that expands the dynamic range is also included in the grayscale conversion process.

色調校正處理是指校正影像的色調的處理。此外，亮度校正處理是指校正影像的亮度(亮度對比)的處理。例如，根據設置有顯示部20A的空間的照明的種類、亮度或色純度等將顯示在顯示部20A上的影像的亮度或色調校正為最適合的亮度或色調。 The tone correction process refers to the process of correcting the tone of an image. In addition, the brightness correction process refers to a process of correcting the brightness (brightness contrast) of an image. For example, the brightness or hue of the image displayed on the display unit 20A is corrected to the most suitable brightness or hue based on the type, brightness, color purity, etc. of the lighting in the space where the display unit 20A is installed.

圖框間補充處理是當增大顯示的影像的圖框頻率時，生成本來不存在的圖框(補充圖框)的影像的處理。例如，利用某兩個影像的差異生成插入在兩個影像之間的補充圖框的影像。或者，也可以在兩個影像之間生成多個補充圖框的影像。例如，當影像資料的圖框頻率為60Hz時，藉由生成多個補充圖框，可以將輸出到顯示部20A的影像信號的圖框頻率增大為兩倍的120Hz、四倍的240Hz或八倍的480Hz等。 The inter-frame supplementary processing is a process of generating an image of a frame (supplementary frame) that does not originally exist by increasing the frame frequency of the displayed image. For example, the difference between two images is used to generate an image of a supplementary frame inserted between the two images. Alternatively, you can generate multiple images of supplementary frames between the two images. For example, when the frame frequency of the image data is 60 Hz, by generating multiple supplementary frames, the frame frequency of the image signal output to the display unit 20A can be increased to twice 120 Hz, four times 240 Hz, or eight times. Times 480Hz etc.

上述影像處理也可以使用與處理部33另行設置的影像處理部進行。另外，上述影像處理中的一個或多個藉由處理部40A進行。 The above image processing may also be performed using an image processing unit provided separately from the processing unit 33 . In addition, one or more of the above image processes are performed by the processing unit 40A.

接收部34具有接收從外部輸入的資料或控制信號的功能。可以利用運算處理裝置50、遙控器、可攜式資訊終端(智慧手機或平板終端等)、設 置在顯示部20A中的操作按鈕、以及觸控面板等對接收部34輸入資料或控制信號。作為運算處理裝置50可以舉出具有優良的運算處理能力的電腦，如電腦、伺服器及雲伺服器等。 The receiving unit 34 has a function of receiving data or control signals input from the outside. Data or control signals can be input to the receiving unit 34 using the computing processing device 50, a remote control, a portable information terminal (smartphone or tablet terminal, etc.), operation buttons provided in the display unit 20A, a touch panel, etc. Examples of the computing processing device 50 include computers with excellent computing processing capabilities, such as computers, servers, cloud servers, etc.

介面35對接收部34所收到的資料或控制信號適當地進行信號處理並將其輸出到控制部36的功能。 The interface 35 has the function of appropriately processing the data or control signals received by the receiving unit 34 and outputting them to the control unit 36 .

控制部36具有對信號生成部30A所包括的各電路供應控制信號的功能。例如，控制部36具有對解碼器32、處理部33以及處理部40A及分割部45A供應控制信號的功能。利用控制部36的控制可以根據接收部34所接收的控制信號等進行。 The control unit 36 has a function of supplying control signals to each circuit included in the signal generation unit 30A. For example, the control unit 36 has a function of supplying control signals to the decoder 32, the processing unit 33, the processing unit 40A, and the dividing unit 45A. Control by the control unit 36 can be performed based on a control signal received by the receiving unit 34 or the like.

處理部40A具有形成校正濾波器的功能。另外，處理部40A具有藉由使用所形成的校正濾波器對從處理部33輸入的第一影像資料SD1進行校正來生成第二影像資料SD2的功能。例如，處理部40A具有校正第一影像資料SD1以減少顯示在顯示部20A上的影像的顯示不均勻的功能。例如，處理部40A具有校正第一影像資料SD1以使顯示面板的邊界不容易被看到，將在後面說明詳細內容。將由處理部40A生成的第二影像資料SD2輸出到分割部45A。 The processing unit 40A has a function of forming a correction filter. In addition, the processing unit 40A has a function of generating second image data SD2 by correcting the first image data SD1 input from the processing unit 33 using the formed correction filter. For example, the processing unit 40A has a function of correcting the first image data SD1 to reduce display unevenness of the image displayed on the display unit 20A. For example, the processing unit 40A corrects the first image data SD1 so that the boundary of the display panel is not easily visible, details of which will be described later. The second video data SD2 generated by the processing unit 40A is output to the dividing unit 45A.

分割部45A具有將從處理部40A輸入的第二影像資料SD2分割的功能。可以將第二影像資料SD2分割為與設置在顯示部20A中的顯示面板DP相同的數量。在圖1A中，第二影像資料SD2被分割為2×1個(第二影像資料SD2[1，1]及第二影像資料SD2[2，1])且輸出到顯示部20A。第二影像資料SD2[1，1]是與顯示在顯示面板DP[1，1]上的影像對應的影像資料，第二影像資料SD2[2，1]是與顯示在顯示面板DP[2，1]上的影像對應的影像資料。分割部45A將第二 影像資料SD2[1，1]輸出到信號線驅動電路23A，並且將第二影像資料SD2[2，1]輸出到信號線驅動電路23B。 The dividing unit 45A has a function of dividing the second video data SD2 input from the processing unit 40A. The second video data SD2 can be divided into the same number of display panels DP provided in the display unit 20A. In FIG. 1A , the second image data SD2 is divided into 2×1 pieces (second image data SD2 [1, 1] and second image data SD2 [2, 1]) and output to the display unit 20A. The second image data SD2[1,1] is the image data corresponding to the image displayed on the display panel DP[1,1], and the second image data SD2[2,1] is the image data corresponding to the image displayed on the display panel DP[2,1]. 1] The image data corresponding to the image on. The dividing unit 45A outputs the second video data SD2[1,1] to the signal line driving circuit 23A, and outputs the second video data SD2[2,1] to the signal line driving circuit 23B.

圖2示出顯示面板DP[1，1]及顯示面板DP[2，1]的具體的結構例子。 FIG. 2 shows specific structural examples of display panel DP[1,1] and display panel DP[2,1].

像素部21A及像素部21B各自包括多個像素25。圖2示出像素部21A及像素部21B各自包括配置為m行n列(m及n分別為1以上的整數)的矩陣狀的多個像素25的例子。 The pixel portion 21A and the pixel portion 21B each include a plurality of pixels 25 . FIG. 2 shows an example in which the pixel portion 21A and the pixel portion 21B each include a plurality of pixels 25 arranged in a matrix of m rows and n columns (m and n are each an integer equal to or greater than 1).

在本說明書等中，有時將設置在像素部21A中的像素稱為第一像素。另外，有時將設置在像素部21B中的像素稱為第二像素。 In this specification and the like, the pixel provided in the pixel portion 21A may be referred to as a first pixel. In addition, the pixels provided in the pixel portion 21B may be called second pixels.

將像素部21A的與像素部21B的邊界部稱為邊界部28A。另外，將像素部21B的與像素部21A的邊界部稱為邊界部28B。例如，在邊界部28A中設置第m行的像素25。例如，在邊界部28A中設置第(7/8)m+1行至第m行的像素25。例如，在邊界部28A中設置第(3/4)m+1行至第m行的像素25。或者，在邊界部28A中設置第(1/2)m1+1行至第m行的像素25。 The boundary portion between the pixel portion 21A and the pixel portion 21B is called a boundary portion 28A. In addition, the boundary portion between the pixel portion 21B and the pixel portion 21A is called a boundary portion 28B. For example, the pixel 25 of the m-th row is provided in the boundary portion 28A. For example, the pixels 25 in the (7/8)m+1th to mth rows are provided in the boundary portion 28A. For example, the pixels 25 in the (3/4)m+1th to mth rows are provided in the boundary portion 28A. Alternatively, the pixels 25 in the (1/2)m1+1th to m-th rows are provided in the boundary portion 28A.

另外，例如在邊界部28B中設置第1行的像素25。例如，在邊界部28B中設置第1行至第(1/8)m行的像素25。例如，在邊界部28B中設置第1行至第(1/4)m行的像素25。例如，在邊界部28B中設置第1行至第(1/2)m行的像素25。 In addition, for example, the pixels 25 of the first row are provided in the boundary portion 28B. For example, the pixels 25 of the 1st row to the (1/8)mth row are provided in the boundary part 28B. For example, the pixels 25 of the 1st row to the (1/4)mth row are provided in the boundary part 28B. For example, the pixels 25 of the 1st row to the (1/2)mth row are provided in the boundary part 28B.

顯示面板DP[1，1]包括m個掃描線GLa(也稱為選擇信號線、閘極線等)。顯示面板DP[2，1]包括m個掃描線GLb。m個掃描線GLa及m個掃描線GLb各自在行方向上延伸。m個掃描線GLa及m個掃描線GLb各自與在行方向上排列的像素25電連接。 The display panel DP[1,1] includes m scanning lines GLa (also called selection signal lines, gate lines, etc.). The display panel DP[2, 1] includes m scanning lines GLb. Each of the m scanning lines GLa and the m scanning lines GLb extends in the row direction. Each of the m scanning lines GLa and the m scanning lines GLb is electrically connected to the pixels 25 arranged in the row direction.

在本說明書等中，有時將設置在本發明的一個實施方式的顯示裝置中的掃描線，如掃描線GLa及掃描線GLb等稱為掃描線GL。 In this specification and the like, the scanning lines provided in the display device according to one embodiment of the present invention, such as the scanning line GLa and the scanning line GLb, may be referred to as the scanning line GL.

另外，在本說明書等中，將與第i行(i為1以上且m以下的整數)的像素25電連接的掃描線GL表示為掃描線GL[i]。注意，除了掃描線GL之外，有時對表示第i行的要素的標記或符號附加[i]以區別。 In addition, in this specification and the like, the scanning line GL electrically connected to the pixel 25 in the i-th row (i is an integer from 1 to m) is expressed as a scanning line GL[i]. Note that, in addition to the scan line GL, [i] is sometimes added to the mark or symbol indicating the element of the i-th row to distinguish it.

掃描線GLa的一端與掃描線驅動電路22A電連接，並且掃描線GLb的一端與掃描線驅動電路22B電連接。掃描線驅動電路22A具有對掃描線GLa供應選擇信號的功能，並且掃描線驅動電路22B具有對掃描線GLb供應選擇信號的功能。選擇信號藉由掃描線GLa被供應到像素部21A所包括的像素25並藉由掃描線GLb被供應到像素部21B所包括的像素25。 One end of the scanning line GLa is electrically connected to the scanning line driving circuit 22A, and one end of the scanning line GLb is electrically connected to the scanning line driving circuit 22B. The scanning line driving circuit 22A has a function of supplying a selection signal to the scanning line GLa, and the scanning line driving circuit 22B has a function of supplying a selection signal to the scanning line GLb. The selection signal is supplied to the pixels 25 included in the pixel portion 21A through the scanning line GLa and to the pixels 25 included in the pixel portion 21B through the scanning line GLb.

另外，掃描線驅動電路22A具有對掃描線GLa[1]至掃描線GLa[m]依次供應選擇信號的功能。換言之，掃描線驅動電路22A具有對掃描線GLa[1]至掃描線GLa[m]依次進行掃描的功能。在掃描到掃描線GLa[m]之後，再從掃描線GLa[1]依次進行掃描。另外，掃描線驅動電路22B具有對掃描線GLb[1]至掃描線GLb[m]依次供應選擇信號的功能。換言之，掃描線驅動電路22B具有對掃描線GLb[1]至掃描線GLb[m]依次進行掃描的功能。在掃描到掃描線GLb[m]之後，再從掃描線GLb[1]依次進行掃描。 In addition, the scanning line driving circuit 22A has a function of sequentially supplying selection signals to the scanning lines GLa[1] to GLa[m]. In other words, the scanning line driving circuit 22A has the function of sequentially scanning the scanning lines GLa[1] to GLa[m]. After scanning to the scanning line GLa[m], scanning is performed sequentially from the scanning line GLa[1]. In addition, the scanning line driving circuit 22B has a function of sequentially supplying selection signals to the scanning lines GLb[1] to GLb[m]. In other words, the scanning line driving circuit 22B has a function of sequentially scanning the scanning lines GLb[1] to GLb[m]. After scanning to the scanning line GLb[m], scanning is performed sequentially from the scanning line GLb[1].

注意，除了掃描線驅動電路22A之外，在顯示面板DP[1，1]中還可以設置另一個掃描線驅動電路。該掃描線驅動電路與掃描線GLa的另一端電連接。因此，兩個掃描線驅動電路設置在隔著像素部21A相對的位置上。另外，除了掃描線驅動電路22B之外，在顯示面板DP[2，1]中還可以設置另一個 掃描線驅動電路。該掃描線驅動電路與掃描線GLb的另一端電連接。因此，兩個掃描線驅動電路設置在隔著像素部21B相對的位置上。 Note that in addition to the scanning line driving circuit 22A, another scanning line driving circuit may be provided in the display panel DP[1, 1]. The scanning line driving circuit is electrically connected to the other end of the scanning line GLa. Therefore, the two scanning line driving circuits are provided at positions facing each other across the pixel portion 21A. In addition, in addition to the scanning line driving circuit 22B, another scanning line driving circuit may be provided in the display panel DP[2,1]. The scanning line driving circuit is electrically connected to the other end of the scanning line GLb. Therefore, the two scanning line driving circuits are provided at positions facing each other across the pixel portion 21B.

在一個顯示面板DP中設置有兩個掃描線驅動電路的情況下，藉由對一個掃描線GLa或掃描線GLb從兩個掃描線驅動電路同時供應選擇信號，可以提高對於該掃描線的選擇信號的供應能力。 When two scanning line driving circuits are provided in one display panel DP, by simultaneously supplying selection signals to one scanning line GLa or scanning line GLb from the two scanning line driving circuits, the selection signal for the scanning line can be improved. supply capacity.

顯示面板DP[1，1]包括n個信號線SLa(也稱為影像信號線、源極線等)，並且顯示面板DP[2，1]包括n個信號線SLb。n個信號線SLa及n個信號線SLb各自在列方向上延伸。n個信號線SLa及n個信號線SLb各自與在列方向上排列的多個像素25電連接。 The display panel DP[1,1] includes n signal lines SLa (also called image signal lines, source lines, etc.), and the display panel DP[2,1] includes n signal lines SLb. The n signal lines SLa and the n signal lines SLb each extend in the column direction. The n signal lines SLa and the n signal lines SLb are each electrically connected to the plurality of pixels 25 arranged in the column direction.

在本說明書等中，有時將設置在本發明的一個實施方式的顯示裝置中的信號線，如信號線SLa及信號線SLb等稱為信號線SL。 In this specification and the like, signal lines provided in the display device according to an embodiment of the present invention, such as the signal line SLa and the signal line SLb, are sometimes referred to as signal lines SL.

另外，在本說明書等中，將與第j列(j為1以上且n以下的整數)的像素25電連接的信號線SL表示為信號線SL[j]。注意，除了信號線SL之外，有時對表示第j列的要素的標記或符號附加[j]以區別。 In addition, in this specification and the like, the signal line SL electrically connected to the pixel 25 in the j-th column (j is an integer from 1 to n) is expressed as a signal line SL[j]. Note that, in addition to the signal line SL, [j] may be added to a mark or symbol indicating an element in the j-th column for distinction.

信號線SLa與信號線驅動電路23A電連接，並且信號線SLb與信號線驅動電路23B電連接。信號線驅動電路23A具有對信號線SLa供應影像信號的功能，並且信號線驅動電路23B具有對信號線SLb供應影像信號的功能。影像信號藉由信號線SLa被供應到像素部21A所包括的像素25並藉由信號線SLb被供應到像素部21B所包括的像素25。 The signal line SLa is electrically connected to the signal line driving circuit 23A, and the signal line SLb is electrically connected to the signal line driving circuit 23B. The signal line driving circuit 23A has a function of supplying an image signal to the signal line SLa, and the signal line driving circuit 23B has a function of supplying an image signal to the signal line SLb. The image signal is supplied to the pixels 25 included in the pixel portion 21A through the signal line SLa and to the pixels 25 included in the pixel portion 21B through the signal line SLb.

像素25包括顯示元件。作為設置在像素25中的顯示元件的例子可以舉出發光元件。作為發光元件，例如可以舉出OLED(Organic Light Emitting Diode：有機發光二極體)、LED(Light Emitting Diode：發光二 極體)、QLED(Quantum-dot Light Emitting Diode：量子點發光二極體)、半導體雷射等自發光性發光元件。藉由作為顯示元件使用發光元件，尤其是OLED或Micro-LED，可以表示鮮明的影像而提高顯示品質。另外，因為包括發光元件的顯示裝置不需要背光，所以能夠提供薄型的顯示裝置。另外，可以提供撓性的顯示裝置。而且，能夠提供視角大的顯示裝置。 Pixel 25 includes a display element. An example of a display element provided in the pixel 25 is a light-emitting element. Examples of light emitting elements include OLED (Organic Light Emitting Diode: organic light emitting diode), LED (Light Emitting Diode: light emitting diode), and QLED (Quantum-dot Light Emitting Diode: quantum dot light emitting diode). , semiconductor laser and other self-luminous light-emitting components. By using light-emitting elements as display elements, especially OLED or Micro-LED, vivid images can be displayed and display quality can be improved. In addition, since a display device including a light-emitting element does not require a backlight, a thin display device can be provided. In addition, a flexible display device can be provided. Furthermore, a display device with a large viewing angle can be provided.

作為顯示元件，可以使用液晶元件。作為液晶元件，可以舉出透射型液晶元件、反射型液晶元件、半透射型液晶元件等。藉由將液晶元件用作顯示元件，可以提供低功耗的顯示裝置。 As the display element, a liquid crystal element can be used. Examples of the liquid crystal element include a transmissive liquid crystal element, a reflective liquid crystal element, a semi-transmissive liquid crystal element, and the like. By using liquid crystal elements as display elements, a display device with low power consumption can be provided.

作為顯示元件可以使用快門方式的MEMS(Micro Electro Mechanical Systems：微機電系統)元件、光干涉方式的MEMS元件，微囊方式、電泳方式、電潤濕方式、電子粉流體(註冊商標)方式等的顯示元件等。 As display elements, MEMS (Micro Electro Mechanical Systems) elements of the shutter method, MEMS elements of the optical interference method, microcapsule method, electrophoresis method, electrowetting method, electronic powder fluid (registered trademark) method, etc. can be used Display components, etc.

可以自由地設定設置在顯示部20A中的像素25的數量。為了將顯示部20A成為大型而顯示高清晰度的影像，較佳為多配置像素25。例如，當進行2K影像的顯示時，較佳為設置1920×1080個以上的像素。另外，當進行4K影像的顯示時，較佳為設置3840×2160個以上或4096×2160個以上的像素。另外，當進行8K影像的顯示時，較佳為設置7680×4320個以上或8192×4320個以上的像素。另外，也可以在顯示部20A中還設置更多的像素。 The number of pixels 25 provided in the display section 20A can be freely set. In order to increase the size of the display unit 20A and display a high-definition image, it is preferable to arrange multiple pixels 25 . For example, when displaying 2K images, it is preferable to set more than 1920×1080 pixels. In addition, when displaying 4K images, it is preferable to set 3840×2160 or more pixels or 4096×2160 or more pixels. In addition, when displaying 8K images, it is preferable to set 7680×4320 or more pixels or 8192×4320 or more pixels. In addition, more pixels may be provided in the display unit 20A.

在使用多個顯示面板DP製造大型顯示部20A的情況下，一個顯示面板DP的尺寸不需要大。由此，不需要用來製造該顯示面板DP的製造裝置的大型化，從而可以節省空間。另外，可以利用中小型顯示面板的製造裝置，由此不需要伴隨顯示部20A的大型化而利用新穎的製造裝置，從而可以抑制製造成本。另外，能夠抑制顯示面板DP的大型化所導致的良率的下降。 When manufacturing the large display section 20A using a plurality of display panels DP, the size of one display panel DP does not need to be large. This eliminates the need to increase the size of the manufacturing apparatus used to manufacture the display panel DP, thereby saving space. In addition, since it is possible to use a manufacturing device for small and medium-sized display panels, it is not necessary to use a novel manufacturing device as the size of the display unit 20A increases, and the manufacturing cost can be suppressed. In addition, it is possible to suppress a decrease in yield due to an increase in the size of the display panel DP.

在顯示面板DP的尺寸相同的情況下，與包括一個顯示面板DP的顯示部相比，包括多個顯示面板DP的顯示部的顯示區域更大，從而發揮能夠同時顯示的資訊量更多等效果。 When the size of the display panels DP is the same, the display area of the display unit including multiple display panels DP is larger than that of the display unit including one display panel DP, thereby exerting effects such as a larger amount of information that can be displayed simultaneously. .

注意，圖2所示的多個像素25可以採用如下結構，亦即具有各自發射紅色(R)、綠色(G)或藍色(B)的光的功能。或者，圖2所示的多個像素25可以採用如下結構，亦即具有各自發射紅色(R)、綠色(G)、藍色(B)或白色(W)的光的功能。如此，藉由將能夠發射不同顏色的光的像素25設置在像素部21A及像素部21B中，可以進行全彩色顯示。注意，在將能夠發射不同顏色的光的像素25設置在像素部21A及像素部21B的情況下，可以將像素25稱為子像素。 Note that the plurality of pixels 25 shown in FIG. 2 may adopt a structure that has the function of respectively emitting red (R), green (G) or blue (B) light. Alternatively, the plurality of pixels 25 shown in FIG. 2 may adopt a structure that has the function of respectively emitting red (R), green (G), blue (B) or white (W) light. In this way, by providing the pixels 25 capable of emitting light of different colors in the pixel portion 21A and the pixel portion 21B, full-color display can be performed. Note that when the pixel 25 capable of emitting light of different colors is provided in the pixel part 21A and the pixel part 21B, the pixel 25 may be called a sub-pixel.

在此，考慮在顯示面板DP中以圍繞像素部21的方式包括非顯示區域的情況。此時，例如在將多個顯示面板DP的輸出影像合併而顯示一個影像的情況下，該一個影像被顯示裝置10A的使用者看為是分離的影像。 Here, consider a case where the display panel DP includes a non-display area surrounding the pixel portion 21 . At this time, for example, when the output images of the plurality of display panels DP are combined to display one image, the one image is viewed as a separate image by the user of the display device 10A.

雖然藉由使顯示面板DP的非顯示區域縮小(使用窄邊框的顯示面板DP)，可以抑制各顯示面板DP的顯示被看為是分離的，但是難以完全消除顯示面板DP的非顯示區域。 Although by reducing the non-display area of the display panel DP (using a narrow-framed display panel DP), the display of each display panel DP can be suppressed from being seen as separate, it is difficult to completely eliminate the non-display area of the display panel DP.

此外，當顯示面板DP的非顯示區域的面積小時，顯示面板DP的端部與顯示面板DP內的元件之間的距離短，由此有時因從顯示面板DP的外部侵入的雜質而元件容易劣化。 In addition, when the area of the non-display area of the display panel DP is small, the distance between the end portion of the display panel DP and the elements in the display panel DP is short, and thus the elements may be easily damaged by impurities that invade from the outside of the display panel DP. Deterioration.

於是，在本發明的一個實施方式中，多個顯示面板DP以其一部分彼此重疊的方式配置。彼此重疊的兩個顯示面板DP中的至少一個位於顯示面一側(上側)的顯示面板DP具有與像素部21相鄰的使可見光透過的區域。在本 發明的一個實施方式中，配置於下側的顯示面板DP的像素部21與配置於上側的顯示面板DP的使可見光透過的區域重疊。因此，可以縮小重疊的兩個顯示面板DP的像素部21之間的非顯示區域，甚至可以消除該非顯示區域。由此，可以實現使用者不容易看到顯示面板DP的接縫的大型顯示部20A。 Therefore, in one embodiment of the present invention, the plurality of display panels DP are arranged such that portions thereof overlap each other. Of the two display panels DP that overlap each other, at least one of the display panels DP located on the display surface side (upper side) has an area that transmits visible light adjacent to the pixel portion 21 . In one embodiment of the present invention, the pixel portion 21 of the display panel DP arranged on the lower side overlaps with the visible light transmitting region of the display panel DP arranged on the upper side. Therefore, the non-display area between the pixel portions 21 of the two overlapping display panels DP can be reduced or even eliminated. This makes it possible to realize the large display portion 20A in which the user cannot easily see the joints of the display panel DP.

位於上側的顯示面板DP的非顯示區域中的至少一部分是使可見光透過的區域，可以與位於下側的顯示面板DP的像素部21重疊。另外，位於下側的顯示面板DP的非顯示區域中的至少一部分可以與位於上側的顯示面板DP的像素部21或遮蔽可見光的區域重疊。因為這些部分對顯示部20A的窄邊框化(顯示部以外的面積的縮小化)沒有影響，所以也可以不進行面積的縮小化。 At least part of the non-display area of the upper display panel DP is an area that transmits visible light, and may overlap with the pixel portion 21 of the lower display panel DP. In addition, at least part of the non-display area of the lower display panel DP may overlap with the pixel portion 21 or the visible light blocking area of the upper display panel DP. Since these parts have no influence on the narrowing of the frame of the display portion 20A (the reduction of the area other than the display portion), it is not necessary to reduce the area.

當顯示面板DP的非顯示區域大時，顯示面板DP的端部與顯示面板DP內的元件之間的距離長，由此可以抑制因從顯示面板DP的外部侵入的雜質而元件劣化。例如，在作為顯示元件使用有機EL元件的情況下，顯示面板DP的端部與有機EL元件之間的距離越長，水分或氧等雜質越不容易從顯示面板DP的外部侵入(或到達)有機EL元件。在本發明的一個實施方式的顯示裝置中，能夠充分確保顯示面板DP的非顯示區域的面積，由此即使應用使用有機EL元件等的顯示面板DP，也可以實現可靠性高的大型顯示部20A。 When the non-display area of the display panel DP is large, the distance between the end portion of the display panel DP and the elements in the display panel DP is long, thereby suppressing element degradation due to impurities intruding from the outside of the display panel DP. For example, when an organic EL element is used as a display element, the longer the distance between the end of the display panel DP and the organic EL element, the less likely impurities such as moisture or oxygen will invade (or reach) from the outside of the display panel DP. Organic EL element. In the display device according to one embodiment of the present invention, the area of the non-display area of the display panel DP can be sufficiently ensured. Therefore, even if the display panel DP using an organic EL element or the like is applied, a large-sized display unit 20A with high reliability can be realized. .

如此，當在顯示部20A上設置多個顯示面板DP時，較佳為以在相鄰的顯示面板DP間像素部21連續的方式配置多個顯示面板DP。 In this manner, when a plurality of display panels DP are provided on the display portion 20A, it is preferable to arrange the plurality of display panels DP so that the pixel portions 21 are continuous between adjacent display panels DP.

圖3A示出顯示面板DP的結構例子，圖3B示出顯示面板DP的配置例子。 FIG. 3A shows a structural example of the display panel DP, and FIG. 3B shows a configuration example of the display panel DP.

圖3A所示的顯示面板DP包括像素部21、使可見光透過的區域72及遮蔽可見光的區域73。使可見光透過的區域72及遮蔽可見光的區域73分別以 與像素部21相鄰的方式設置。圖3A示出在顯示面板DP上設置有FPC(Flexible Printed Circuit：軟性印刷電路)74的例子。 The display panel DP shown in FIG. 3A includes a pixel portion 21, a region 72 that transmits visible light, and a region 73 that blocks visible light. The visible light transmitting region 72 and the visible light blocking region 73 are respectively provided adjacent to the pixel portion 21. FIG. 3A shows an example in which an FPC (Flexible Printed Circuit) 74 is provided on the display panel DP.

如圖2所示，像素部21包括多個像素25。可以在使可見光透過的區域72中設置有構成顯示面板DP的一對基板以及用來密封夾在該一對基板之間的顯示元件的密封劑等。此時，作為在使可見光透過的區域72中設置的構件使用對可見光具有透光性的材料。另外，也可以在遮蔽可見光的區域73中設置有與像素部21所包括的像素25電連接的佈線等。另外，也可以在遮蔽可見光的區域73中設置有掃描線驅動電路22和信號線驅動電路23中的一者或兩者。另外，也可以在遮蔽可見光的區域73中設置有與FPC74連接的端子、與該端子連接的佈線等。 As shown in FIG. 2 , the pixel unit 21 includes a plurality of pixels 25 . A pair of substrates constituting the display panel DP and a sealant for sealing a display element sandwiched between the pair of substrates may be provided in the region 72 that transmits visible light. At this time, a material that is translucent to visible light is used as a member provided in the region 72 that transmits visible light. In addition, wiring or the like electrically connected to the pixels 25 included in the pixel unit 21 may be provided in the visible light blocking region 73 . In addition, one or both of the scanning line driving circuit 22 and the signal line driving circuit 23 may be provided in the visible light blocking region 73 . In addition, a terminal connected to the FPC 74 , wiring connected to the terminal, etc. may be provided in the visible light shielding area 73 .

圖3B是將兩個圖3A所示的顯示面板DP在縱方向(行方向)上配置的例子，並是顯示面板DP的顯示面一側的透視圖。 3B is an example in which two display panels DP shown in FIG. 3A are arranged in the vertical direction (row direction), and is a perspective view of the display surface side of the display panel DP.

兩個顯示面板DP(顯示面板DP[1，1]及顯示面板DP[2，1])以包括彼此重疊的區域的方式配置。明確而言，顯示面板DP[2，1]所包括的使可見光透過的區域72配置為重疊於像素部21A上(顯示面一側)。由此，可以將像素部21A及像素部21B配置為幾乎沒有接縫的區域記為顯示部20A的顯示區域29。 The two display panels DP (display panel DP[1, 1] and display panel DP[2, 1]) are arranged to include areas overlapping each other. Specifically, the visible light transmitting region 72 included in the display panel DP[2,1] is arranged to overlap the pixel portion 21A (display surface side). Therefore, the area in which the pixel portion 21A and the pixel portion 21B are arranged with almost no joints can be referred to as the display area 29 of the display portion 20A.

在此，顯示面板DP較佳為具有撓性。例如，構成顯示面板DP的一對基板較佳為具有撓性。由此，可以緩慢地使顯示面板DP[2，1]彎曲，以像素部21B的頂面高度與像素部21A的頂面高度一致。由此，除了顯示面板DP[1，1]與顯示面板DP[2，1]重疊的區域附近以外，能夠使各顯示區域的高度一致，從而可以提高在顯示區域29上顯示的影像的顯示品質。 Here, the display panel DP is preferably flexible. For example, it is preferable that a pair of substrates constituting the display panel DP have flexibility. Thereby, the display panel DP[2,1] can be gradually bent so that the height of the top surface of the pixel portion 21B matches the height of the top surface of the pixel portion 21A. As a result, the heights of each display area can be made consistent except for the vicinity of the area where display panel DP[1,1] and display panel DP[2,1] overlap, thereby improving the display quality of the image displayed on display area 29 .

注意，為了減小鄰接的兩個顯示面板DP之間的步階，較佳的是，顯示面板DP的厚度薄。例如，顯示面板DP的厚度較佳為1mm以下，更佳為300μm以下，進一步較佳為100μm以下。 Note that in order to reduce the step between two adjacent display panels DP, it is preferable that the thickness of the display panel DP is thin. For example, the thickness of the display panel DP is preferably 1 mm or less, more preferably 300 μm or less, and further preferably 100 μm or less.

如圖4A所示，在顯示部20A中存在有顯示面板DP相鄰的區域，亦即顯示面板DP的接縫區域(圖中的區域S)。在使用多個顯示面板DP顯示影像時，較佳為確保區域S中的影像的連續性。 As shown in FIG. 4A , in the display portion 20A, there is an area where the display panels DP are adjacent to each other, that is, a joint area of the display panels DP (area S in the figure). When using multiple display panels DP to display images, it is best to ensure the continuity of the images in the area S.

但是，像素25所包括的電晶體的特性或電容器的尺寸、信號線SL的寄生電阻或寄生電容以及信號線驅動電路23的驅動能力等根據顯示面板DP有可能不同。由此，對各顯示面板DP供應影像信號時，在各顯示面板DP所顯示的影像中發生誤差，因此在接縫區域中影像會不連續。另外，如圖3B所示，一個顯示面板DP的像素部21包括與其他顯示面板DP的使可見光透過的區域72重疊的區域時，在接縫區域中顯示在像素部21上的影像藉由使可見光透過的區域72被看到，所以發生灰階的誤差。由此，在將處理部33所生成的第一影像資料SD1直接被分割而成的資料(第一影像資料SD1[1，1]及第一影像資料SD1[2，1])供應給各顯示面板DP時，如圖4B所示，在區域S中會看到不連續的影像。 However, the characteristics of the transistor included in the pixel 25 or the size of the capacitor, the parasitic resistance or parasitic capacitance of the signal line SL, the driving capability of the signal line driving circuit 23, etc. may differ depending on the display panel DP. Therefore, when an image signal is supplied to each display panel DP, an error occurs in the image displayed by each display panel DP, so the image becomes discontinuous in the joint area. In addition, as shown in FIG. 3B , when the pixel portion 21 of one display panel DP includes an area that overlaps with the visible light transmitting area 72 of another display panel DP, the image displayed on the pixel portion 21 in the joint area is formed by The area 72 through which visible light passes is seen, so an error in gray scale occurs. As a result, the data (first image data SD1 [1, 1] and first image data SD1 [2, 1]) directly divided from the first image data SD1 generated by the processing unit 33 is supplied to each display. When the panel is DP, as shown in Figure 4B, discontinuous images will be seen in area S.

在此，顯示裝置10A所包括的處理部40A可以校正第一影像資料SD1以使兩個顯示面板DP的接縫中的影像的不連續性不容易被看到。由此，在使用多個顯示面板DP構成顯示部20A時，可以在顯示面板DP的接縫中影像畸變不容易被看到。另外，可以減少各顯示面板的色調的不均勻，例如可以減少顯示在顯示面板DP[1，1]上的影像的色調和顯示在顯示面板DP[2，1]上的影像的色調的不均勻。由此，可以提高顯示品質。 Here, the processing unit 40A included in the display device 10A may correct the first image data SD1 so that the discontinuity of the image in the seam of the two display panels DP is not easily visible. Accordingly, when the display unit 20A is configured using a plurality of display panels DP, image distortion can be less likely to be seen at the joints of the display panels DP. In addition, unevenness in the color tone of each display panel can be reduced. For example, unevenness in the color tone of the image displayed on the display panel DP[1,1] and the color tone of the image displayed on the display panel DP[2,1] can be reduced. . As a result, display quality can be improved.

<1-2.顯示裝置的工作方法的一個例子1> <1-2. An example of the operation method of the display device 1>

接著，對顯示裝置10A的工作方法的一個例子進行說明。圖5A和圖5B是說明校正濾波器的形成方法的流程圖，該校正濾波器是用來使顯示面板DP的接縫中的影像的不連續性不容易被看到的。 Next, an example of the operation method of the display device 10A will be described. 5A and 5B are flowcharts illustrating a method of forming a correction filter for making image discontinuities in the seams of the display panel DP less visible.

對圖5A所示的工作方法的一個例子進行說明。首先，處理部40A形成用來校正與顯示在顯示面板DP[1，1]上的影像對應的影像資料的校正濾波器及用來校正與顯示在顯示面板DP[2，1]上的影像對應的影像資料的校正濾波器(步驟S01)。在此，在本說明書等中，將用來校正與顯示在顯示面板DP[1，1]上的影像對應的影像資料的校正濾波器稱為第一校正濾波器。此外，將用來校正與顯示在顯示面板DP[2，1]上的影像對應的影像資料的校正濾波器稱為第二校正濾波器。 An example of the operation method shown in FIG. 5A will be described. First, the processing unit 40A forms a correction filter for correcting the image data corresponding to the image displayed on the display panel DP[1,1] and a correction filter for correcting the image data corresponding to the image displayed on the display panel DP[2,1]. Correction filter for image data (step S01). Here, in this specification and the like, a correction filter for correcting the image data corresponding to the image displayed on the display panel DP[1,1] is called a first correction filter. In addition, the correction filter used to correct the image data corresponding to the image displayed on the display panel DP[2,1] is called a second correction filter.

第一校正濾波器例如可以為用來減少顯示在顯示面板DP[1，1]上的影像的顯示不均勻的校正濾波器。第二校正濾波器例如可以為用來減少顯示在顯示面板DP[2，1]上的影像的顯示不均勻的校正濾波器。後面將說明第一校正濾波器及第二校正濾波器的形成方法，例如，可以以如下方式形成第一校正濾波器，亦即減少在顯示面板DP[1，1]上顯示預定的灰階值的影像時的從像素25發射的光的亮度的像素25之間的不均勻。另外，例如也可以以如下方式形成第二校正濾波器，亦即減少在顯示面板DP[2，1]上顯示預定的灰階值的影像時的從像素25發射的光的亮度的像素25之間的不均勻。 The first correction filter may be, for example, a correction filter used to reduce display unevenness of the image displayed on the display panel DP[1,1]. The second correction filter may be, for example, a correction filter used to reduce display unevenness of the image displayed on the display panel DP[2,1]. The formation method of the first correction filter and the second correction filter will be described later. For example, the first correction filter can be formed in the following manner, that is, reducing the predetermined grayscale value displayed on the display panel DP[1,1] The image is non-uniform between pixels 25 when the brightness of the light emitted from the pixels 25 is uneven. In addition, for example, the second correction filter may be formed in one of the pixels 25 that reduces the brightness of the light emitted from the pixels 25 when an image with a predetermined gray scale value is displayed on the display panel DP[2,1]. unevenness between.

在本說明書等中，例如預定的灰階值的影像是指所有的像素的灰階值相同的影像。 In this specification and the like, for example, an image with a predetermined grayscale value refers to an image in which all pixels have the same grayscale value.

在此，當顯示中間灰階的影像時，在很多情況下從像素發射的光的亮度的像素之間的不均勻增大。因此，在以預定的灰階值的影像為所有的 像素25的灰階值相同的影像的情況下，例如所有的像素25的灰階值較佳為中間灰階。例如，在像素25能夠表示的灰階值為0至255的情況下，所有的像素25的灰階值較佳為127或其附近。例如，較佳為整個面灰色的影像。 Here, when an image of an intermediate gray scale is displayed, unevenness among pixels in brightness of light emitted from the pixels increases in many cases. Therefore, when an image with a predetermined grayscale value is an image in which all pixels 25 have the same grayscale value, for example, the grayscale values of all pixels 25 are preferably intermediate grayscales. For example, when the grayscale values that the pixels 25 can represent are 0 to 255, the grayscale values of all the pixels 25 are preferably 127 or thereabouts. For example, an image in which the entire surface is gray is preferred.

第一校正濾波器例如具有示出從顯示面板DP[1，1]所包括的像素25發射的光的亮度的對於每個像素25的校正強度的資料。第二校正濾波器例如具有示出從顯示面板DP[2，1]所包括的像素25發射的光的亮度的對於每個像素25的校正強度的資料。注意，在本說明書等中，將校正濾波器所具有的資料示出的校正強度等值稱為濾波值。例如，可以說是第一校正濾波器具有與設置在顯示面板DP[1，1]中的像素25的像素的數量相同的數量的濾波值。例如，可以說是第二校正濾波器具有與設置在顯示面板DP[2，1]中的像素25的像素的數量相同的數量的濾波值。 The first correction filter has, for example, data showing the correction intensity for each pixel 25 of the brightness of light emitted from the pixels 25 included in the display panel DP[1,1]. The second correction filter has, for example, data showing the correction intensity for each pixel 25 of the brightness of light emitted from the pixels 25 included in the display panel DP[2,1]. Note that in this specification and the like, values such as the correction intensity shown in the data included in the correction filter are called filter values. For example, it can be said that the first correction filter has the same number of filter values as the number of pixels of the pixel 25 provided in the display panel DP[1,1]. For example, it can be said that the second correction filter has the same number of filter values as the number of pixels of the pixel 25 provided in the display panel DP[2,1].

接著，處理部40A使用第一校正濾波器，對與預定的灰階值的影像對應的影像資料進行校正，而在顯示面板DP[1，1]上顯示與校正之後的影像資料對應的影像。此外，處理部40A使用第二校正濾波器，對與預定的灰階值的影像對應的影像資料進行校正，而在顯示面板DP[2，1]上顯示與校正之後的影像資料對應的影像。然後，藉由使用二維亮度計等對從設置在邊界部28A及邊界部28B中的像素25發射的光的亮度進行測定(步驟S02)。 Next, the processing unit 40A uses the first correction filter to correct the image data corresponding to the image with a predetermined grayscale value, and displays the image corresponding to the corrected image data on the display panel DP[1, 1]. In addition, the processing unit 40A uses the second correction filter to correct the image data corresponding to the image with a predetermined grayscale value, and displays the image corresponding to the corrected image data on the display panel DP[2,1]. Then, the brightness of the light emitted from the pixels 25 provided in the boundary portion 28A and the boundary portion 28B is measured by using a two-dimensional luminance meter or the like (step S02).

接著，對從設置在邊界部28A中的像素25發射的光的亮度和從設置在邊界部28B中的像素25發射的光的亮度進行比較(步驟S03)。例如，對從設置在邊界部28A中的像素25發射的光的亮度的平均值和從設置在邊界部28B中的像素25發射的光的亮度的平均值進行比較。 Next, the brightness of the light emitted from the pixel 25 provided in the boundary part 28A and the brightness of the light emitted from the pixel 25 provided in the boundary part 28B are compared (step S03). For example, the average value of the luminance of light emitted from the pixels 25 provided in the boundary portion 28A and the average value of the luminance of the light emitted from the pixels 25 provided in the boundary portion 28B are compared.

然後，根據比較結果，處理部40A對校正濾波器進行修正(步驟S04)。例如，在以從設置在邊界部28A中的像素25發射的光的亮度的平均值為LA且以從設置在邊界部28B中的像素25發射的光的亮度的平均值為LB的情況下，以使從設置在像素部21B中的像素25發射的光的亮度為LA/LB倍的方式對第二校正濾波器進行修正。或者，例如，以使從設置在像素部21A中的像素25發射的光的亮度為LB/LA倍的方式對第一校正濾波器進行修正。或者，例如，以使從設置在像素部21A中的像素25發射的光的亮度為(LA+LB)/2LA倍的方式對第一校正濾波器進行修正，並且以使從設置在像素部21B中的像素25發射的光的亮度為(LA+LB)/2LB倍的方式對第二校正濾波器進行修正。藉由上述方式形成新的校正濾波器。以上是在顯示裝置10A中使用的校正濾波器的形成方法的一個例子。 Then, based on the comparison result, the processing unit 40A corrects the correction filter (step S04). For example, in the case where the average value of the luminance of the light emitted from the pixel 25 provided in the boundary portion 28A is L A and the average value of the luminance of the light emitted from the pixel 25 provided in the boundary portion 28B is LB Next, the second correction filter is corrected so that the brightness of the light emitted from the pixel 25 provided in the pixel portion 21B is L A /L B times. Alternatively, for example, the first correction filter is corrected so that the brightness of the light emitted from the pixel 25 provided in the pixel portion 21A is L B /L A times. Alternatively, for example, the first correction filter is corrected so that the brightness of the light emitted from the pixel 25 provided in the pixel portion 21A is ( LA + L B )/ 2L The second correction filter is corrected so that the brightness of the light emitted by the pixel 25 in the pixel portion 21B is ( LA + L B )/2L B times. A new correction filter is formed in the above manner. The above is an example of the formation method of the correction filter used in the display device 10A.

注意，雖然上面示出對校正濾波器進行修正以根據上述比較結果校正從設置在像素部21A及/或像素部21B中的所有的像素25發射的光的亮度的情況，但是本發明的一個實施方式不侷限於此。例如，也可以對校正濾波器進行修正以根據上述比較結果校正從設置在邊界部28A及/或邊界部28B中的像素25發射的光的亮度。例如，也可以對校正濾波器進行修正以根據上述比較結果校正從設置在邊界部28A及/或邊界部28B中的所有的像素25發射的光的亮度及從設置在除此之外的區域中的像素25的一部分發射的光的亮度。例如，如圖3B所示那樣，也可以對校正濾波器進行修正以根據上述比較結果校正從設置在與區域72重疊的區域中的像素25發射的光的亮度。 Note that although the above shows a case where the correction filter is corrected to correct the brightness of light emitted from all the pixels 25 provided in the pixel portion 21A and/or the pixel portion 21B based on the above comparison result, one embodiment of the present invention The method is not limited to this. For example, the correction filter may be corrected to correct the brightness of light emitted from the pixels 25 provided in the boundary portion 28A and/or the boundary portion 28B based on the comparison result. For example, the correction filter may be corrected to correct the brightness of the light emitted from all the pixels 25 provided in the boundary portion 28A and/or the boundary portion 28B and the light emitted from the other areas based on the comparison result. The brightness of the light emitted by part of the pixel 25. For example, as shown in FIG. 3B , the correction filter may be corrected to correct the brightness of the light emitted from the pixel 25 provided in the area overlapping the area 72 based on the above-described comparison result.

對圖5B所示的工作方法的一個例子進行說明。首先，與圖5A所示的步驟S01同樣，處理部40A形成第一校正濾波器及第二校正濾波器(步驟S11)。 An example of the operation method shown in FIG. 5B will be described. First, similarly to step S01 shown in FIG. 5A , the processing unit 40A forms a first correction filter and a second correction filter (step S11 ).

接著，對第一校正濾波器所具有的與設置在邊界部28A中的像素25對應的濾波值和第二校正濾波器所具有的與設置在邊界部28B中的像素25對應的濾波值進行比較(步驟S12)。例如，對與設置在邊界部28A中的像素25對應的濾波值的平均值和與設置在邊界部28B中的像素25對應的濾波值的平均值進行比較。 Next, the filter value of the first correction filter corresponding to the pixel 25 provided in the boundary portion 28A and the filter value of the second correction filter corresponding to the pixel 25 provided in the boundary portion 28B are compared. (Step S12). For example, the average value of the filter values corresponding to the pixels 25 provided in the boundary portion 28A and the average value of the filter values corresponding to the pixels 25 provided in the boundary portion 28B are compared.

然後，與圖5A所示的步驟S04同樣，根據比較結果對校正濾波器進行修正。例如，在以與設置在邊界部28A中的像素25對應的濾波值的平均值為DA且以與設置在邊界部28B中的像素25對應的濾波值的平均值為DB的情況下，以使第二校正濾波器所具有的濾波值分別為DA/DB倍的方式對第二校正濾波器進行修正。或者，例如，以使第一校正濾波器所具有的濾波值分別為DB/DA倍的方式對第一校正濾波器進行修正。或者，例如，以使第一校正濾波器所具有的濾波值分別為(DA+DB)/2DA倍的方式對第一校正濾波器進行修正，並且使第二校正濾波器所具有的濾波值分別為(DA+DB)/2DB倍的方式對第二校正濾波器進行修正。藉由上述方式形成新的校正濾波器。以上是在顯示裝置10A中使用的校正濾波器的形成方法的一個例子。 Then, similarly to step S04 shown in FIG. 5A , the correction filter is corrected based on the comparison result. For example, when the average value of the filter values corresponding to the pixels 25 provided in the boundary portion 28A is D A and the average value of the filter values corresponding to the pixels 25 provided in the boundary portion 28B is D B , The second correction filter is corrected so that the filter values of the second correction filter are times D A /D B respectively. Or, for example, the first correction filter is corrected so that the filter values of the first correction filter are D B / DA times. Or, for example, the first correction filter is corrected in such a way that the filter values of the first correction filter are ( DA + D B )/2D A times, respectively, and the second correction filter is made to have The second correction filter is corrected in such a manner that the filter values are times ( DA + D B )/2D B respectively. A new correction filter is formed in the above manner. The above is an example of the formation method of the correction filter used in the display device 10A.

注意，雖然上面示出對校正濾波器進行修正以根據上述比較結果校正與設置在像素部21A及/或像素部21B中的所有的像素25對應的濾波值的情況，但是本發明的一個實施方式不侷限於此。例如，也可以對校正濾波器進行修正以根據上述比較結果校正與設置在邊界部28A及/或邊界部28B中的像素 25對應的濾波值。例如，也可以對校正濾波器進行修正以根據上述比較結果校正與設置在邊界部28A及/或邊界部28B中的所有的像素25對應的濾波值及與設置在除此之外的區域中的像素25的一部分對應的濾波值。例如，如圖3B所示那樣，也可以對校正濾波器進行修正以根據上述比較結果校正與設置在與區域72重疊的區域中的像素25對應的濾波值。 Note that although the above shows a case where the correction filter is corrected to correct the filter values corresponding to all the pixels 25 provided in the pixel portion 21A and/or the pixel portion 21B based on the above comparison result, one embodiment of the present invention Not limited to this. For example, the correction filter may be corrected to correct the filter value corresponding to the pixel 25 provided in the boundary portion 28A and/or the boundary portion 28B based on the comparison result. For example, the correction filter may be corrected to correct the filter values corresponding to all pixels 25 provided in the boundary portion 28A and/or the boundary portion 28B and the filter values provided in other areas based on the above comparison results. The filter value corresponding to a portion of pixel 25. For example, as shown in FIG. 3B , the correction filter may be corrected to correct the filter value corresponding to the pixel 25 provided in the area overlapping the area 72 based on the comparison result.

在藉由圖5A和圖5B所示的方法形成新的校正濾波器之後，也可以對該校正濾波器進行進一步的修正，而按每個像素25調整校正強度。例如，也可以使對於設置在像素部21A中的像素25中之設置在邊界部28A的外部的像素25的校正強度比對於設置在邊界部28A中的像素25的校正強度弱。另外，例如，也可以使對於設置在像素部21B中的像素25中之設置在邊界部28B的外部的像素25的校正強度比對於設置在邊界部28B中的像素25的校正強度弱。 After forming a new correction filter by the method shown in FIG. 5A and FIG. 5B , the correction filter can also be further modified to adjust the correction intensity for each pixel 25 . For example, the correction intensity for the pixels 25 provided outside the boundary portion 28A among the pixels 25 provided in the pixel portion 21A may be made weaker than the correction intensity for the pixels 25 provided in the boundary portion 28A. For example, the correction intensity for the pixels 25 provided outside the boundary portion 28B among the pixels 25 provided in the pixel portion 21B may be made weaker than the correction intensity for the pixels 25 provided in the boundary portion 28B.

在藉由上述方法形成新的校正濾波器之後，例如處理部40A使用校正濾波器校正與從外部輸入的信號對應的第一影像資料SD1，而生成第二影像資料SD2。接著，分割部45A將第二影像資料SD2分割為與顯示在顯示面板DP[1，1]上的影像對應的影像資料SD2[1，1]及與顯示在顯示面板DP[2，1]上的影像對應的影像資料SD2[2，1]。然後，將與影像資料SD2[1，1]對應的影像顯示在像素部21A上，並且將與影像資料SD2[2，1]對應的影像顯示在像素部21B上。以上是顯示裝置10A的工作方法的一個例子。 After the new correction filter is formed by the above method, for example, the processing unit 40A uses the correction filter to correct the first image data SD1 corresponding to the signal input from the outside to generate the second image data SD2. Next, the dividing unit 45A divides the second image data SD2 into image data SD2[1,1] corresponding to the image displayed on the display panel DP[1,1] and the image data SD2[1,1] corresponding to the image displayed on the display panel DP[2,1]. The image data corresponding to the image is SD2[2, 1]. Then, the image corresponding to the image data SD2 [1, 1] is displayed on the pixel portion 21A, and the image corresponding to the image data SD2 [2, 1] is displayed on the pixel portion 21B. The above is an example of the operation method of the display device 10A.

注意，在處理部40A形成新的校正濾波器之後，也可以對該校正濾波器進行進一步的修正。例如，也可以對校正濾波器進行修正，以可以去除根據藉由圖5A和圖5B所示的方法形成的校正濾波器難以去除的雜訊。例如，也可以對校正濾波器進行修正，以使壞像素等的缺陷不容易被看到。例如，也可 以對校正濾波器進行修正，以可以進行與處理部33能夠進行的影像處理相同的處理。例如，以使藉由圖5A和圖5B所示的方法形成的校正濾波器具有用作平滑化濾波器的功能的方式進行校正濾波器的修正。由此，可以進一步提高本發明的一個實施方式的顯示裝置的顯示品質。 Note that after the processing unit 40A forms a new correction filter, the correction filter may be further modified. For example, the correction filter may be modified so as to remove noise that is difficult to remove by the correction filter formed by the method shown in FIGS. 5A and 5B . For example, the correction filter can also be modified so that defects such as bad pixels are less visible. For example, the correction filter may be corrected so that the same image processing as the processing unit 33 can be performed can be performed. For example, the correction filter is modified so that the correction filter formed by the method shown in FIGS. 5A and 5B has the function of a smoothing filter. As a result, the display quality of the display device according to the embodiment of the present invention can be further improved.

注意，例如可以在步驟S01和步驟S02之間及步驟S11和步驟S12之間進行上述校正濾波器的修正。此外，在處理部40A形成新的校正濾波器之後，對該校正濾波器進行進一步的修正的情況下，可以省略處理部33。 Note that the correction of the correction filter described above may be performed, for example, between step S01 and step S02 and between step S11 and step S12. In addition, when the processing unit 40A forms a new correction filter and further corrects the correction filter, the processing unit 33 may be omitted.

藉由以圖5A和圖5B所示的方法形成新的校正濾波器之後顯示影像，可以使顯示面板DP的接縫中的影像的畸變不容易被看到。另外，可以減少顯示在顯示面板DP[1，1]上的影像的色調和顯示在顯示面板DP[2，1]上的影像的色調的不均勻。由此，可以提高顯示品質。 By forming a new correction filter using the method shown in FIG. 5A and FIG. 5B before displaying the image, the distortion of the image in the seam of the display panel DP can be made less visible. In addition, unevenness in the color tone of the image displayed on the display panel DP [1, 1] and the color tone of the image displayed on the display panel DP [2, 1] can be reduced. As a result, display quality can be improved.

即使在兩個顯示面板DP排列為橫方向(列方向)，例如在顯示部20A中設置有顯示面板DP[1，1]及顯示面板DP[1，2]的情況下，也可以使用圖1A至圖5B所示的結構及工作。此時，例如，適當地將“行”調換為“列”，將“第m行”調換為“第n列”，將“顯示面板DP[2，1]”調換為“顯示面板DP[1，2]”。 Even if the two display panels DP are arranged in the horizontal direction (column direction), for example, when the display unit 20A is provided with the display panel DP[1,1] and the display panel DP[1,2], FIG. 1A can be used. to the structure and operation shown in Figure 5B. At this time, for example, "row" is appropriately replaced with "column", "m-th row" is replaced with "n-th column", and "display panel DP[2,1]" is replaced with "display panel DP[1]" ,2]".

接著，說明在顯示部20A中將顯示面板DP排列為2行2列時的校正濾波器的形成方法的一個例子。圖6A、圖6B及圖6C是示出校正濾波器的形成方法的一個例子的模式圖，按圖6A、圖6B及圖6C的順序進行工作。 Next, an example of a method of forming a correction filter when the display panels DP are arranged in two rows and two columns in the display unit 20A will be described. 6A, 6B and 6C are schematic diagrams illustrating an example of a method of forming a correction filter. The operation is performed in the order of FIGS. 6A, 6B and 6C.

在圖6A、圖6B及圖6C中，作為2行2列的顯示面板DP示出顯示面板DP[1，1]、顯示面板DP[2，1]、顯示面板DP[1，2]及顯示面板DP[2，2]。在圖6A中，將顯示面板DP[1，1]的與顯示面板DP[2，1]的邊界部稱為邊界部 28A。另外，將顯示面板DP[2，1]的與顯示面板DP[1，1]的邊界部稱為邊界部28B。另外，將顯示面板DP[1，2]的與顯示面板DP[2，2]的邊界部稱為邊界部28C。另外，將顯示面板DP[2，2]的與顯示面板DP[1，2]的邊界部稱為邊界部28D。 In FIG. 6A , FIG. 6B and FIG. 6C , the display panel DP [1, 1], the display panel DP [2, 1], the display panel DP [1, 2] and the display panel DP are shown as two rows and two columns. Panel DP[2,2]. In Fig. 6A, the boundary portion between display panel DP[1,1] and display panel DP[2,1] is called boundary portion 28A. In addition, the boundary portion between the display panel DP[2,1] and the display panel DP[1,1] is called a boundary portion 28B. In addition, the boundary part between the display panel DP[1,2] and the display panel DP[2,2] is called a boundary part 28C. In addition, the boundary part between the display panel DP[2,2] and the display panel DP[1,2] is called a boundary part 28D.

另外，在圖6B中，將顯示面板DP[1，1]的與顯示面板DP[1，2]的邊界部稱為邊界部29A。另外，將顯示面板DP[2，1]的與顯示面板DP[2，2]的邊界部稱為邊界部29B。另外，將顯示面板DP[1，2]的與顯示面板DP[1，1]的邊界部稱為邊界部29C。另外，將顯示面板DP[2，2]的與顯示面板DP[2，1]的邊界部稱為邊界部29D。 In addition, in FIG. 6B , the boundary portion between the display panel DP[1,1] and the display panel DP[1,2] is called a boundary portion 29A. In addition, the boundary part between the display panel DP[2,1] and the display panel DP[2,2] is called a boundary part 29B. In addition, the boundary part between the display panel DP[1,2] and the display panel DP[1,1] is called a boundary part 29C. In addition, the boundary part between the display panel DP[2,2] and the display panel DP[2,1] is called a boundary part 29D.

在形成校正濾波器時，首先，對顯示面板DP[1，1]及顯示面板DP[2，1]進行圖5A或圖5B所示的工作。另外，對顯示面板DP[1，2]及顯示面板DP[2，2]進行圖5A或圖5B所示的工作。此時，在圖5A所示的步驟S03中，對從設置在邊界部28C中的像素25發射的光的亮度和從設置在邊界部28D中的像素25發射的光的亮度進行比較。或者，在圖5B所示的步驟S12中，對與設置在邊界部28C中的像素25對應的濾波值和與設置在邊界部28D中的像素25對應的濾波值進行比較。藉由上述方式，在顯示面板DP[1，1]和顯示面板DP[2，1]的接縫及顯示面板DP[1，2]和顯示面板DP[2，2]的接縫中影像的不連續性不容易被看到。 When forming the correction filter, first, the operation shown in FIG. 5A or 5B is performed on the display panel DP[1,1] and the display panel DP[2,1]. In addition, the operation shown in FIG. 5A or 5B is performed on the display panel DP[1, 2] and the display panel DP[2, 2]. At this time, in step S03 shown in FIG. 5A , the brightness of the light emitted from the pixel 25 provided in the boundary part 28C and the brightness of the light emitted from the pixel 25 provided in the boundary part 28D are compared. Alternatively, in step S12 shown in FIG. 5B , the filter value corresponding to the pixel 25 provided in the boundary portion 28C and the filter value corresponding to the pixel 25 provided in the boundary portion 28D are compared. Through the above method, the image at the joint between the display panel DP[1,1] and the display panel DP[2,1] and between the display panel DP[1,2] and the display panel DP[2,2] is Discontinuities are not easily seen.

注意，也可以對從設置在邊界部28A及邊界部28C中的像素25發射的光的亮度和從設置在邊界部28B及邊界部28D中的像素25發射的光的亮度一共進行比較。換言之，例如，可以對從設置在邊界部28A中的像素25發射的光的亮度與從設置在邊界部28C中的像素25發射的光的亮度的平均值LAC和從設置 在邊界部28B中的像素25發射的光的亮度與從設置在邊界部28D中的像素25發射的光的亮度的平均值LBD進行比較。另外，也可以對與設置在邊界部28A及邊界部28C中的像素25對應的濾波值和與設置在邊界部28B及邊界部28D中的像素25對應的濾波值一共進行比較。換言之，例如，可以對與設置在邊界部28A中的像素25對應的濾波值及與設置在邊界部28C中的像素25對應的濾波值的平均值DAC和與設置在邊界部28B中的像素25對應的濾波值及與設置在邊界部28D中的像素25對應的濾波值的平均值DBD進行比較。 Note that the brightness of the light emitted from the pixels 25 provided in the boundary portion 28A and the boundary portion 28C and the brightness of the light emitted from the pixels 25 provided in the boundary portion 28B and the boundary portion 28D may be compared together. In other words, for example, the average value L AC of the luminance of the light emitted from the pixel 25 provided in the boundary portion 28A and the luminance of the light emitted from the pixel 25 provided in the boundary portion 28C and the value of the luminance of the light emitted from the pixel 25 provided in the boundary portion 28B can be calculated. The brightness of the light emitted from the pixels 25 is compared with the average value L BD of the brightness of the light emitted from the pixels 25 provided in the boundary portion 28D. In addition, the filter values corresponding to the pixels 25 provided in the boundary portion 28A and the boundary portion 28C and the filter values corresponding to the pixels 25 provided in the boundary portion 28B and the boundary portion 28D may be compared together. In other words, for example, the average value D AC of the filter value corresponding to the pixel 25 provided in the boundary part 28A and the filter value corresponding to the pixel 25 provided in the boundary part 28C and the average value D AC of the filter value corresponding to the pixel 25 provided in the boundary part 28B may be The filter value corresponding to pixel 25 is compared with the average value D BD of the filter value corresponding to the pixel 25 provided in the boundary portion 28D.

接著，對顯示面板DP[1，1]及顯示面板DP[1，2]進行圖5A或圖5B所示的工作。此時，在圖5A所示的步驟S03中，對從設置在邊界部29A中的像素25發射的光的亮度和從設置在邊界部29C中的像素25發射的光的亮度進行比較。或者，在圖5B所示的步驟S12中，對與設置在邊界部29A中的像素25對應的濾波值和與設置在邊界部29C中的像素25對應的濾波值進行比較。 Next, the operation shown in FIG. 5A or 5B is performed on the display panel DP[1, 1] and the display panel DP[1, 2]. At this time, in step S03 shown in FIG. 5A , the brightness of the light emitted from the pixel 25 provided in the boundary portion 29A is compared with the brightness of the light emitted from the pixel 25 provided in the boundary portion 29C. Alternatively, in step S12 shown in FIG. 5B , the filter value corresponding to the pixel 25 provided in the boundary portion 29A and the filter value corresponding to the pixel 25 provided in the boundary portion 29C are compared.

此外，對顯示面板DP[2，1]及顯示面板DP[2，2]進行圖5A或圖5B所示的工作。此時，在圖5A所示的步驟S03中，對從設置在邊界部29B中的像素25發射的光的亮度和從設置在邊界部29D中的像素25發射的光的亮度進行比較。或者，在圖5B所示的步驟S12中，對與設置在邊界部29B中的像素25對應的濾波值和與設置在邊界部29D中的像素25對應的濾波值進行比較。 In addition, the operation shown in FIG. 5A or 5B is performed on the display panel DP[2, 1] and the display panel DP[2, 2]. At this time, in step S03 shown in FIG. 5A , the brightness of the light emitted from the pixel 25 provided in the boundary part 29B and the brightness of the light emitted from the pixel 25 provided in the boundary part 29D are compared. Alternatively, in step S12 shown in FIG. 5B , the filter value corresponding to the pixel 25 provided in the boundary portion 29B and the filter value corresponding to the pixel 25 provided in the boundary portion 29D are compared.

藉由上述方式，在顯示面板DP[1，1]和顯示面板DP[1，2]的接縫及顯示面板DP[2，1]和顯示面板DP[2，2]的接縫中影像的不連續性不容易被看到。注意，也可以對從設置在邊界部29A及邊界部29B中的像素25發射的光的亮度和從設置在邊界部29C及邊界部29D中的像素25發射的光的亮度一共進行比 較。此外，也可以對與設置在邊界部29A及邊界部29B中的像素25對應的濾波值和與設置在邊界部29C及邊界部29D中的像素25對應的濾波值一共進行比較。 Through the above method, the image at the joint between the display panel DP[1,1] and the display panel DP[1,2] and the joint between the display panel DP[2,1] and the display panel DP[2,2] Discontinuities are not easily seen. Note that the brightness of the light emitted from the pixels 25 provided in the boundary portion 29A and the boundary portion 29B and the brightness of the light emitted from the pixels 25 provided in the boundary portion 29C and the boundary portion 29D may be compared together. Furthermore, the filter values corresponding to the pixels 25 provided in the boundary portion 29A and the boundary portion 29B and the filter values corresponding to the pixels 25 provided in the boundary portion 29C and the boundary portion 29D may be compared together.

注意，不一定必須進行從設置在邊界部29A中的像素25發射的光的亮度和從設置在邊界部29C中的像素25發射的光的亮度的比較。另外，不一定必須進行與設置在邊界部29A中的像素25對應的濾波值和與設置在邊界部29C中的像素25對應的濾波值的比較。 Note that comparison of the luminance of the light emitted from the pixel 25 provided in the boundary portion 29A and the luminance of the light emitted from the pixel 25 provided in the boundary portion 29C is not necessarily necessary. In addition, comparison between the filter value corresponding to the pixel 25 provided in the boundary portion 29A and the filter value corresponding to the pixel 25 provided in the boundary portion 29C is not necessarily necessary.

此外，說明在顯示部20A中將顯示面板DP排列為2行3列時的校正濾波器的形成方法的一個例子。圖7A至圖7C是示出校正濾波器的形成方法的一個例子的模式圖，按圖7A、圖7B及圖7C的順序進行工作。 Furthermore, an example of a method of forming a correction filter when the display panels DP are arranged in two rows and three columns in the display unit 20A will be described. 7A to 7C are schematic diagrams showing an example of a method of forming a correction filter. The operation is performed in the order of FIG. 7A, FIG. 7B, and FIG. 7C.

在圖7A至圖7C中，作為2行3列的顯示面板DP示出顯示面板DP[1，1]、顯示面板DP[2，1]、顯示面板DP[1，2]、顯示面板DP[2，2]、顯示面板DP[1，3]及顯示面板DP[2，3]。在圖7B中，將顯示面板DP[1，2]的與顯示面板DP[1，3]的邊界部稱為邊界部29E。另外，將顯示面板DP[2，2]的與顯示面板DP[2，3]的邊界部稱為邊界部29F。另外，將顯示面板DP[1，3]的與顯示面板DP[1，2]的邊界部稱為邊界部29G。另外，將顯示面板DP[2，3]的與顯示面板DP[2，2]的邊界部稱為邊界部29H。 In FIGS. 7A to 7C , display panels DP[1,1], display panels DP[2,1], display panels DP[1,2], and display panels DP[ are shown as display panels DP in two rows and three columns. 2, 2], display panel DP [1, 3] and display panel DP [2, 3]. In FIG. 7B , the boundary portion between display panel DP[1,2] and display panel DP[1,3] is called boundary portion 29E. In addition, the boundary part between the display panel DP[2,2] and the display panel DP[2,3] is called a boundary part 29F. In addition, the boundary part between the display panel DP[1,3] and the display panel DP[1,2] is called a boundary part 29G. In addition, the boundary portion between the display panel DP[2,3] and the display panel DP[2,2] is called a boundary portion 29H.

在形成校正濾波器時，首先，對顯示面板DP[1，1]、顯示面板DP[2，1]、顯示面板DP[1，2]及顯示面板DP[2，2]進行圖6A、圖6B及圖6C所示的工作。另外，對顯示面板DP[1，3]及顯示面板DP[2，3]進行圖5A或圖5B所示的工作。 When forming the correction filter, first, the display panel DP[1,1], the display panel DP[2,1], the display panel DP[1,2] and the display panel DP[2,2] are processed as shown in Figure 6A and Figure 6A. 6B and the work shown in Figure 6C. In addition, the operation shown in FIG. 5A or 5B is performed on the display panel DP[1, 3] and the display panel DP[2, 3].

接著，對顯示面板DP[1，2]及顯示面板DP[1，3]進行圖5A或圖5B所示的工作。此時，在圖5A所示的步驟S03中，對從設置在邊界部29E中的像 素25發射的光的亮度和從設置在邊界部29G中的像素25發射的光的亮度進行比較。或者，在圖5B所示的步驟S12中，對與設置在邊界部29E中的像素25對應的濾波值和與設置在邊界部29G中的像素25對應的濾波值進行比較。 Next, the operation shown in FIG. 5A or 5B is performed on the display panel DP[1, 2] and the display panel DP[1, 3]. At this time, in step S03 shown in Fig. 5A, the brightness of the light emitted from the pixel 25 provided in the boundary portion 29E and the brightness of the light emitted from the pixel 25 provided in the boundary portion 29G are compared. Alternatively, in step S12 shown in FIG. 5B , the filter value corresponding to the pixel 25 provided in the boundary portion 29E and the filter value corresponding to the pixel 25 provided in the boundary portion 29G are compared.

另外，對顯示面板DP[2，2]及顯示面板DP[2，3]進行圖5A或圖5B所示的工作。此時，在圖5A所示的步驟S03中，對從設置在邊界部29F中的像素25發射的光的亮度和從設置在邊界部29H中的像素25發射的光的亮度進行比較。或者，在圖5B所示的步驟S12中，對與設置在邊界部29F中的像素25對應的濾波值和與設置在邊界部29H中的像素25對應的濾波值進行比較。 In addition, the operation shown in FIG. 5A or 5B is performed on the display panel DP[2, 2] and the display panel DP[2, 3]. At this time, in step S03 shown in FIG. 5A , the brightness of the light emitted from the pixel 25 provided in the boundary part 29F and the brightness of the light emitted from the pixel 25 provided in the boundary part 29H are compared. Alternatively, in step S12 shown in FIG. 5B , the filter value corresponding to the pixel 25 provided in the boundary portion 29F and the filter value corresponding to the pixel 25 provided in the boundary portion 29H are compared.

藉由上述方式，在顯示面板DP[1，2]和顯示面板DP[1，3]的接縫及顯示面板DP[2，2]和顯示面板DP[2，3]的接縫中影像的不連續性不容易被看到。注意，也可以對從設置在邊界部29E及邊界部29F中的像素25發射的光的亮度和從設置在邊界部29G及邊界部29H中的像素25發射的光的亮度一共進行比較。此外，也可以對與設置在邊界部29E及邊界部29F中的像素25對應的濾波值和與設置在邊界部29G及邊界部29H中的像素25對應的濾波值一共進行比較。 Through the above method, the image at the joint between the display panel DP[1, 2] and the display panel DP[1, 3] and between the display panel DP[2, 2] and the display panel DP[2, 3] is Discontinuities are not easily seen. Note that the brightness of the light emitted from the pixels 25 provided in the boundary portion 29E and the boundary portion 29F and the brightness of the light emitted from the pixels 25 provided in the boundary portion 29G and the boundary portion 29H may be compared together. In addition, the filter values corresponding to the pixels 25 provided in the boundary portion 29E and the boundary portion 29F and the filter values corresponding to the pixels 25 provided in the boundary portion 29G and the boundary portion 29H may be compared together.

即使在顯示部20C中將顯示面板DP排列為3行以上或4列以上的情況下，藉由採用圖6A、圖6B、圖6C、圖7A、圖7B及圖7C所示的方法也能夠形成用來校正與顯示在各顯示面板DP上的影像對應的影像資料的校正濾波器。 Even when the display panels DP are arranged in three or more rows or four or more columns in the display portion 20C, the method can be formed by using the method shown in FIGS. 6A, 6B, 6C, 7A, 7B and 7C. A correction filter used to correct the image data corresponding to the image displayed on each display panel DP.

<1-3.像素的結構例子1> <1-3. Pixel structure example 1>

下面對像素25的結構例子參照圖8A和圖8B進行說明。圖8A是示出包括發光元件的像素25的結構例子的電路圖。另外，圖8B是示出包括液晶元件的像素25的結構例子的電路圖。 Next, a structural example of the pixel 25 will be described with reference to FIGS. 8A and 8B . FIG. 8A is a circuit diagram showing a structural example of the pixel 25 including a light-emitting element. In addition, FIG. 8B is a circuit diagram showing a structural example of the pixel 25 including a liquid crystal element.

圖8A所示的像素25包括電晶體446、電容器433、電晶體251、電晶體444及發光元件170。 The pixel 25 shown in FIG. 8A includes a transistor 446, a capacitor 433, a transistor 251, a transistor 444 and a light-emitting element 170.

電晶體446的源極和汲極中的一個與被供應影像信號的信號線SL電連接。此外，電晶體446的閘極與被供應選擇信號的掃描線GL電連接。 One of the source and the drain of the transistor 446 is electrically connected to the signal line SL to which the image signal is supplied. In addition, the gate of the transistor 446 is electrically connected to the scan line GL to which the selection signal is supplied.

電晶體446具有控制對節點445的影像信號的寫入的功能。 The transistor 446 has a function of controlling writing of the image signal to the node 445 .

電容器433的一個電極與節點445電連接，並且電容器433的另一個電極與節點447電連接。另外，電晶體446的源極和汲極中的另一個與節點445電連接。 One electrode of capacitor 433 is electrically connected to node 445, and the other electrode of capacitor 433 is electrically connected to node 447. In addition, the other one of the source electrode and the drain electrode of transistor 446 is electrically connected to node 445 .

電容器433具有保持寫入到節點445的資料的儲存電容器的功能。 Capacitor 433 has the function of a storage capacitor that holds data written to node 445 .

電晶體251的源極和汲極中的一個與電位供應線VL_a電連接，且電晶體251的源極和汲極中的另一個與節點447電連接。並且，電晶體251的閘極與節點445電連接。 One of the source and the drain of the transistor 251 is electrically connected to the potential supply line VL_a, and the other of the source and the drain of the transistor 251 is electrically connected to the node 447 . Furthermore, the gate of the transistor 251 is electrically connected to the node 445 .

電晶體444的源極和汲極中的一個與電位供應線V0電連接，且電晶體444的源極和汲極中的另一個與節點447電連接。並且，電晶體444的閘極與掃描線GL電連接。 One of the source and the drain of the transistor 444 is electrically connected to the potential supply line V0, and the other of the source and the drain of the transistor 444 is electrically connected to the node 447. Furthermore, the gate of the transistor 444 is electrically connected to the scan line GL.

發光元件170的一個電極與電位供應線VL_b電連接，且發光元件170的另一個電極與節點447電連接。 One electrode of the light-emitting element 170 is electrically connected to the potential supply line VL_b, and the other electrode of the light-emitting element 170 is electrically connected to the node 447 .

注意，作為電源電位，例如可以使用相對高電位一側的電位或低電位一側的電位。將高電位一側的電源電位稱為高電源電位(也稱為“VDD”)，將低電位一側的電源電位稱為低電源電位(也稱為“VSS”)。另外，也可以將接地電位用作高電源電位或低電源電位。例如，在高電源電位為 接地電位的情況下，低電源電位為低於接地電位的電位，在低電源電位為接地電位的情況下，高電源電位為高於接地電位的電位。 Note that as the power supply potential, for example, the potential on the relatively high potential side or the potential on the low potential side can be used. The power supply potential on the high potential side is called high power supply potential (also called "VDD"), and the power supply potential on the low potential side is called low power supply potential (also called "VSS"). In addition, the ground potential can also be used as a high power supply potential or a low power supply potential. For example, when the high power supply potential is the ground potential, the low power supply potential is a potential lower than the ground potential, and when the low power supply potential is the ground potential, the high power supply potential is a potential higher than the ground potential.

例如，對電位供應線VL_a和電位供應線VL_b中的一個供應高電源電位VDD，且對電位供應線VL_a和電位供應線VL_b中的另一個供應低電源電位VSS。 For example, one of the potential supply lines VL_a and VL_b is supplied with the high power supply potential VDD, and the other of the potential supply lines VL_a and VL_b is supplied with the low power supply potential VSS.

在包括圖8A所示的結構的像素25的顯示裝置中，由掃描線驅動電路22依次選擇各行的像素25，由此使電晶體446及電晶體444成為開啟狀態來將影像信號寫入到節點445。 In a display device including the pixels 25 having the structure shown in FIG. 8A , the scanning line driver circuit 22 sequentially selects the pixels 25 in each row, thereby turning the transistors 446 and 444 on to write image signals to the nodes. 445.

由於電晶體446及電晶體444成為關閉狀態，而資料被寫入到節點445的像素25成為保持狀態。再者，根據寫入到節點445的資料的電位，控制流過在電晶體251的源極與汲極之間的電流量，並且，發光元件170以對應於流過的電流量的亮度發光。藉由按行依次進行上述步驟，可以顯示影像。 Since the transistor 446 and the transistor 444 are in the off state, the pixel 25 having data written to the node 445 is in the hold state. Furthermore, the amount of current flowing between the source and the drain of the transistor 251 is controlled based on the potential of the data written to the node 445, and the light-emitting element 170 emits light with a brightness corresponding to the amount of flowing current. By performing the above steps row by row, the image can be displayed.

圖8B所示的像素25包括電晶體446、電容器433及液晶元件180。 The pixel 25 shown in FIG. 8B includes a transistor 446, a capacitor 433 and a liquid crystal element 180.

根據像素25的規格適當地設定液晶元件180的一個電極的電位。根據寫入到節點445的資料設定液晶元件180的配向狀態。此外，也可以對多個像素25分別具有的液晶元件180的一個電極供應共用電位。另外，也可以對各行的像素25的每個液晶元件180的一個電極供應不同的電位。 The potential of one electrode of the liquid crystal element 180 is appropriately set according to the specifications of the pixel 25 . The alignment state of the liquid crystal element 180 is set according to the data written to node 445. In addition, a common potential may be supplied to one electrode of the liquid crystal element 180 each of the plurality of pixels 25 has. In addition, different potentials may be supplied to one electrode of each liquid crystal element 180 of the pixels 25 in each row.

在像素25中，電晶體446的源極和汲極中的一個與信號線SL電連接，電晶體446的源極和汲極中的另一個與節點445電連接。電晶體446的閘極與掃描線GL電連接。電晶體446具有控制對節點445的影像信號的寫入的功能。 In the pixel 25 , one of the source and the drain of the transistor 446 is electrically connected to the signal line SL, and the other of the source and the drain of the transistor 446 is electrically connected to the node 445 . The gate of the transistor 446 is electrically connected to the scan line GL. The transistor 446 has a function of controlling writing of the image signal to the node 445 .

電容器433的一個電極與被供應預定電位的佈線(以下稱為電容線CL)電連接，且電容器433的另一個電極與節點445電連接。另外，液晶元件 180的另一個電極與節點445電連接。此外，電容線CL的電位值根據像素25的規格適當地設定。電容器433具有保持寫入到節點445的資料的儲存電容器的功能。 One electrode of the capacitor 433 is electrically connected to a wiring (hereinafter referred to as a capacitance line CL) supplied with a predetermined potential, and the other electrode of the capacitor 433 is electrically connected to the node 445 . In addition, the other electrode of the liquid crystal element 180 is electrically connected to the node 445. In addition, the potential value of the capacitance line CL is appropriately set according to the specifications of the pixel 25 . Capacitor 433 has the function of a storage capacitor that holds data written to node 445 .

在包括圖8B的像素25的顯示裝置中，由掃描線驅動電路22依次選擇各行的像素25，由此使電晶體446成為開啟狀態來將影像信號寫入到節點445。 In the display device including the pixels 25 in FIG. 8B , the scanning line driver circuit 22 sequentially selects the pixels 25 in each row, thereby turning the transistor 446 into an on state and writing the image signal to the node 445 .

由於電晶體446成為關閉狀態，而影像信號被寫入到節點445的像素25成為保持狀態。藉由按行依次進行上述步驟，可以顯示影像。 Since the transistor 446 is in the off state, the image signal is written to the pixel 25 at the node 445 and the pixel 25 is in the hold state. By performing the above steps row by row, the image can be displayed.

<1-4.顯示裝置的結構例子2> <1-4. Structure example 2 of display device>

圖9是示出顯示裝置10B的結構例子的方塊圖。 FIG. 9 is a block diagram showing a structural example of the display device 10B.

與顯示裝置10A相同，顯示裝置10B具有：利用從外部接收的資料生成影像資料的功能；以及根據該影像資料顯示影像的功能。 Like the display device 10A, the display device 10B has a function of generating image data using data received from the outside and a function of displaying an image based on the image data.

如圖9所示，顯示裝置10B包括顯示部20B及信號生成部30B。與顯示部20A相同，顯示部20B包括多個顯示面板DP。與信號生成部30A相同，信號生成部30B具有利用從外部接收的資料生成影像資料的功能。 As shown in FIG. 9 , the display device 10B includes a display unit 20B and a signal generation unit 30B. Like the display unit 20A, the display unit 20B includes a plurality of display panels DP. Like the signal generation unit 30A, the signal generation unit 30B has a function of generating video data using data received from the outside.

圖9示出在顯示部20B中將顯示面板DP排列為2行1列的例子。可以分別獨立的控制顯示面板DP的顯示。注意，與顯示部20A相同，在顯示部20B中既可以將顯示面板DP排列為3行以上，又可以排列為2列以上。 FIG. 9 shows an example in which the display panels DP are arranged in two rows and one column in the display unit 20B. The display of the display panel DP can be controlled independently. Note that, like the display unit 20A, the display panels DP may be arranged in three or more rows or in two or more columns in the display unit 20B.

信號生成部30B包括前端部31、解碼器32、處理部33、接收部34、介面35、控制部36、處理部40B及分割部45B。 The signal generation part 30B includes a front-end part 31, a decoder 32, a processing part 33, a receiving part 34, an interface 35, a control part 36, a processing part 40B and a dividing part 45B.

與處理部40A相同，處理部40B具有形成校正濾波器的功能。與此相反，處理部40B與處理部40A不同，而處理部40B也可以不具有使用所形成 的校正濾波器對第一影像資料SD1進行校正的功能。並且，所形成的校正濾波器被用作校正濾波器FIL並與校正之前的影像資料的第一影像資料SD1一起輸出到分割部45B。 Like the processing unit 40A, the processing unit 40B has a function of forming a correction filter. On the contrary, the processing unit 40B is different from the processing unit 40A, and the processing unit 40B does not need to have the function of correcting the first image data SD1 using the formed correction filter. Then, the formed correction filter is used as the correction filter FIL and is output to the dividing unit 45B together with the first image data SD1 of the image data before correction.

分割部45B具有將從處理部40A輸入的第一影像資料SD1及校正濾波器FIL分割的功能。可以將第一影像資料SD1及校正濾波器FIL分割為與設置在顯示部20B中的顯示面板DP相同的數量。在圖9中，第一影像資料SD1被分割為2×1個(第一影像資料SD1[1，1]及第一影像資料[2，1])且輸出到顯示部20B。另外，校正濾波器FIL被分割為2×1個(校正濾波器FIL[1，1]及校正濾波器FIL[2，1])且輸出到顯示部20B。明確而言，第一影像資料SD1[1，1]及校正濾波器FIL[1，1]被輸出到顯示面板DP[1，1]，第一影像資料SD1[2，1]及校正濾波器FIL[2，1]被輸出到顯示面板DP[2，1]。 The dividing unit 45B has a function of dividing the first image data SD1 and the correction filter FIL input from the processing unit 40A. The first image data SD1 and the correction filter FIL can be divided into the same number of display panels DP provided in the display portion 20B. In FIG. 9 , the first image data SD1 is divided into 2×1 pieces (the first image data SD1 [1, 1] and the first image data [2, 1]) and is output to the display unit 20B. In addition, the correction filter FIL is divided into 2×1 pieces (correction filter FIL[1,1] and correction filter FIL[2,1]) and output to the display unit 20B. Specifically, the first image data SD1[1,1] and the correction filter FIL[1,1] are output to the display panel DP[1,1], the first image data SD1[2,1] and the correction filter FIL[2,1] is output to the display panel DP[2,1].

設置在顯示面板DP中的像素包括記憶體電路，在該記憶體電路中可以保持校正濾波器FIL。由此，不在處理部40B中而在像素內部可以進行第一影像資料SD1的校正。因此，能夠使處理部40B的結構變得簡單，且可以降低本發明的一個實施方式的顯示裝置的功耗。 The pixels provided in the display panel DP include a memory circuit in which the correction filter FIL can be held. Thereby, the correction of the first video data SD1 can be performed not in the processing unit 40B but inside the pixels. Therefore, the structure of the processing unit 40B can be simplified, and the power consumption of the display device according to one embodiment of the present invention can be reduced.

圖10示出設置在圖9所示的結構的顯示裝置10B中的顯示面板DP[1，1]及顯示面板DP[2，1]的結構例子。 FIG. 10 shows a structural example of the display panel DP[1,1] and the display panel DP[2,1] provided in the display device 10B having the structure shown in FIG. 9 .

與圖2所示的結構的顯示面板DP[1，1]相同，圖10所示的結構的顯示面板DP[1，1]包括像素部21A、掃描線驅動電路22A及信號線驅動電路23A。與圖2所示的結構的顯示面板DP[2，1]相同，圖10所示的結構的顯示面板DP[2，1]包括像素部21B、掃描線驅動電路22B及信號線驅動電路23B。 Similar to the display panel DP[1,1] having the structure shown in FIG. 2, the display panel DP[1,1] having the structure shown in FIG. 10 includes a pixel portion 21A, a scanning line driver circuit 22A, and a signal line driver circuit 23A. Similar to the display panel DP[2,1] having the structure shown in FIG. 2, the display panel DP[2,1] having the structure shown in FIG. 10 includes a pixel portion 21B, a scanning line driver circuit 22B, and a signal line driver circuit 23B.

如圖10所示，像素部21A及像素部21B各自包括多個像素26。圖10示出像素部21A及像素部21B各自包括配置為m行n列的矩陣狀的多個像素26的例子。 As shown in FIG. 10 , each of the pixel portion 21A and the pixel portion 21B includes a plurality of pixels 26 . FIG. 10 shows an example in which the pixel portion 21A and the pixel portion 21B each include a plurality of pixels 26 arranged in a matrix of m rows and n columns.

在像素26中設置記憶體電路MEM。記憶體電路MEM具有保持校正濾波器FIL的功能。藉由像素26設置有記憶體電路MEM，如上所述那樣不在處理部40B中而在像素內部可以進行第一影像資料SD1的校正。 A memory circuit MEM is provided in the pixel 26 . The memory circuit MEM has the function of retaining the correction filter FIL. Since the pixel 26 is provided with the memory circuit MEM, the correction of the first image data SD1 can be performed inside the pixel, not in the processing unit 40B, as described above.

顯示面板DP[1，1]包括m個掃描線GL1a、m個掃描線GL2a及m個掃描線GL3a，顯示面板DP[2，1]包括m個掃描線GL1b、m個掃描線GL2b及m個掃描線GL3b。m個掃描線GL1a、掃描線GL1b、掃描線GL2a、掃描線GL2b、掃描線GL3a及掃描線GL3b各自在行方向上延伸。m個掃描線GL1a各自與在像素部21A中排列為行方向的像素26中設置的記憶體電路MEM電連接，m個掃描線GL1b各自與在像素部21B中排列為行方向的像素26中設置的記憶體電路MEM電連接。m個掃描線GL2a及掃描線GL3a各自與在像素部21A中排列為行方向的像素26電連接，m個掃描線GL2b及掃描線GL3b各自與在像素部21B中排列為行方向的像素26電連接。 The display panel DP[1,1] includes m scanning lines GL1a, m scanning lines GL2a and m scanning lines GL3a. The display panel DP[2,1] includes m scanning lines GL1b, m scanning lines GL2b and m scanning lines GL2b. Scan line GL3b. Each of the m scanning lines GL1a, GL1b, GL2a, GL2b, GL3a, and GL3b extends in the row direction. Each of the m scanning lines GL1a is electrically connected to the memory circuit MEM provided in the pixels 26 arranged in the row direction in the pixel portion 21A, and each of the m scanning lines GL1b is provided in the pixels 26 arranged in the row direction in the pixel portion 21B. The memory circuit MEM is electrically connected. The m scanning lines GL2a and GL3a are each electrically connected to the pixels 26 arranged in the row direction in the pixel portion 21A, and the m scanning lines GL2b and GL3b are each electrically connected to the pixels 26 arranged in the row direction in the pixel portion 21B. connection.

掃描線GL1a、掃描線GL2a及掃描線GL3a的一端與掃描線驅動電路22A電連接，掃描線GL1b、掃描線GL2b及掃描線GL3b的一端與掃描線驅動電路22B電連接。掃描線驅動電路22A具有對掃描線GL1a、掃描線GL2a及掃描線GL3a供應選擇信號的功能，掃描線驅動電路22B具有對掃描線GL1b、掃描線GL2b及掃描線GL3b供應選擇信號的功能。 One end of the scanning line GL1a, the scanning line GL2a and the scanning line GL3a is electrically connected to the scanning line driving circuit 22A, and one end of the scanning line GL1b, the scanning line GL2b and the scanning line GL3b is electrically connected to the scanning line driving circuit 22B. The scanning line driver circuit 22A has a function of supplying a selection signal to the scanning line GL1a, the scanning line GL2a, and the scanning line GL3a. The scanning line driving circuit 22B has a function of supplying a selection signal to the scanning line GL1b, the scanning line GL2b, and the scanning line GL3b.

在本說明書等中，有時將設置在本發明的一個實施方式的顯示裝置中的掃描線，如掃描線GL1a及掃描線GL1b等稱為掃描線GL1。另外，有時 將設置在本發明的一個實施方式的顯示裝置中的掃描線，如掃描線GL2a及掃描線GL2b等稱為掃描線GL2。另外，有時將設置在本發明的一個實施方式的顯示裝置中的掃描線，如掃描線GL3a及掃描線GL3b等稱為掃描線GL3。 In this specification and others, the scanning lines provided in the display device according to one embodiment of the present invention, such as the scanning line GL1a and the scanning line GL1b, may be referred to as the scanning line GL1. In addition, the scanning lines provided in the display device according to an embodiment of the present invention, such as the scanning line GL2a and the scanning line GL2b, are sometimes called scanning lines GL2. In addition, the scanning lines provided in the display device according to an embodiment of the present invention, such as the scanning line GL3a and the scanning line GL3b, may be referred to as the scanning line GL3.

顯示面板DP[1，1]包括n個信號線SL1a及n個信號線SL2a，顯示面板DP[2，1]包括n個信號線SL1b及n個信號線SL2b。n個信號線SL化、信號線SL1b、信號線SL2a及信號線SL2b各自在列方向上延伸。n個信號線SL1a各自與在像素部21A中排列為列方向的多個像素26中設置的記憶體電路MEM電連接，n個信號線SL1b各自與在像素部21B中排列為列方向的多個像素26中設置的記憶體電路MEM電連接。n個信號線SL2a各自與在像素部21A中排列為列方向的多個像素26電連接，n個信號線SL2b各自與在像素部21B中排列為列方向的多個像素26電連接。 The display panel DP[1,1] includes n signal lines SL1a and n signal lines SL2a, and the display panel DP[2,1] includes n signal lines SL1b and n signal lines SL2b. Each of the n signal lines SL1b, signal line SL2a, and signal line SL2b extends in the column direction. The n signal lines SL1a are each electrically connected to the memory circuit MEM provided in the plurality of pixels 26 arranged in the column direction in the pixel portion 21A, and the n signal lines SL1b are each electrically connected to the plurality of pixels 26 arranged in the column direction in the pixel portion 21B. The memory circuit MEM provided in the pixel 26 is electrically connected. The n signal lines SL2 a are each electrically connected to the plurality of pixels 26 arranged in the column direction in the pixel portion 21A, and the n signal lines SL2 b are each electrically connected to the plurality of pixels 26 arranged in the column direction in the pixel portion 21B.

信號線SL1a及信號線SL2a與信號線驅動電路23A電連接，並且信號線SL1b及信號線SL2b與信號線驅動電路23B電連接。信號線驅動電路23A具有對信號線SL1a供應與校正濾波器對應的信號的功能，並且信號線驅動電路23B具有對信號線SL1b供應與校正濾波器對應的信號的功能。注意，在本說明書等中，將與校正濾波器對應的信號稱為校正濾波器信號。校正濾波器信號藉由信號線SL1a或信號線SL1b被供應到記憶體電路MEM。 The signal line SL1a and the signal line SL2a are electrically connected to the signal line driving circuit 23A, and the signal line SL1b and the signal line SL2b are electrically connected to the signal line driving circuit 23B. The signal line driving circuit 23A has a function of supplying a signal corresponding to the correction filter to the signal line SL1a, and the signal line driving circuit 23B has a function of supplying a signal corresponding to the correction filter to the signal line SL1b. Note that in this specification and the like, a signal corresponding to a correction filter is called a correction filter signal. The correction filter signal is supplied to the memory circuit MEM through the signal line SL1a or the signal line SL1b.

另外，信號線驅動電路23A具有對信號線SL2a供應影像信號的功能，並且信號線驅動電路23B具有對信號線SL2b供應影像信號的功能。影像信號藉由信號線SL2a或信號線SL2b被供應到像素26。 In addition, the signal line driving circuit 23A has a function of supplying an image signal to the signal line SL2a, and the signal line driving circuit 23B has a function of supplying an image signal to the signal line SL2b. The image signal is supplied to the pixel 26 through the signal line SL2a or the signal line SL2b.

在本說明書等中，有時將設置在本發明的一個實施方式的顯示裝置中的信號線，如信號線SL1a及信號線SL1b等稱為信號線SL1。另外，有時 將設置在本發明的一個實施方式的顯示裝置中的信號線，如信號線SL2a及信號線SL2b等稱為信號線SL2。 In this specification and the like, signal lines provided in the display device according to an embodiment of the present invention, such as the signal line SL1a and the signal line SL1b, may be referred to as the signal line SL1. In addition, the signal lines provided in the display device according to one embodiment of the present invention, such as the signal line SL2a and the signal line SL2b, may be referred to as the signal line SL2.

像素26包括顯示元件。與設置在像素25中的顯示元件相同，作為設置在像素26中的顯示元件，例如可以使用發光元件及液晶元件。 Pixel 26 includes a display element. Like the display elements provided in the pixel 25 , for example, a light-emitting element and a liquid crystal element can be used as the display element provided in the pixel 26 .

與像素25相同，圖10所示的多個像素26可以採用如下結構，亦即具有各自發射紅色(R)、綠色(G)或藍色(B)的光的功能。或者，圖10所示的多個像素26可以採用如下結構，亦即具有各自發射紅色(R)、綠色(G)、藍色(B)或白色(W)的光的功能。 Similar to the pixel 25, the plurality of pixels 26 shown in FIG. 10 may have a structure that each has a function of emitting red (R), green (G) or blue (B) light. Alternatively, the plurality of pixels 26 shown in FIG. 10 may have a structure that each has a function of emitting red (R), green (G), blue (B) or white (W) light.

即使在兩個顯示面板DP排列為橫方向(列方向)，例如在顯示部20B中設置有顯示面板DP[1，1]及顯示面板DP[1，2]的情況下，也可以使用圖9及圖10所示的結構。此時，例如，適當地將“顯示面板DP[2，1]”調換為“顯示面板DP[1，2]”。 Even when two display panels DP are arranged in the horizontal direction (column direction), for example, when display panel DP[1, 1] and display panel DP[1, 2] are provided in display section 20B, FIG. 9 can be used. And the structure shown in Figure 10. At this time, for example, "display panel DP[2, 1]" is appropriately replaced with "display panel DP[1, 2]".

<1-5.像素的結構例子2> <1-5. Pixel structure example 2>

下面對像素26的結構例子參照圖11進行說明。 Next, a structural example of the pixel 26 will be described with reference to FIG. 11 .

圖11是示出像素26的結構例子的電路圖。圖11所示的結構的像素26包括電晶體101、電晶體102、電晶體111、電晶體112、電容器103、電容器113及發光元件104。注意，作為發光元件104可以使用有機EL元件及無機EL元件等。 FIG. 11 is a circuit diagram showing a structural example of the pixel 26. The pixel 26 having the structure shown in FIG. 11 includes a transistor 101 , a transistor 102 , a transistor 111 , a transistor 112 , a capacitor 103 , a capacitor 113 and a light-emitting element 104 . Note that as the light-emitting element 104, an organic EL element, an inorganic EL element, or the like can be used.

電晶體101的源極和汲極中的一個與電容器113的一個電極電連接。電容器113的另一個電極與電晶體111的源極和汲極中的一個電連接。電晶體111的源極和汲極中的一個與電晶體112的閘極電連接。電晶體112的閘極與電容器103的一個電極電連接。電容器103的另一個電極與電晶體112的源極和 汲極中的一個電連接。電晶體112的源極和汲極中的一個與電晶體102的源極和汲極中的一個電連接。電晶體102的源極和汲極中的另一個與發光元件104的一個電極電連接。 One of the source and the drain of the transistor 101 is electrically connected to one electrode of the capacitor 113 . The other electrode of the capacitor 113 is electrically connected to one of the source electrode and the drain electrode of the transistor 111 . One of the source electrode and the drain electrode of the transistor 111 is electrically connected to the gate electrode of the transistor 112 . The gate of the transistor 112 is electrically connected to one electrode of the capacitor 103 . The other electrode of capacitor 103 is electrically connected to one of the source and drain of transistor 112. One of the source and drain of transistor 112 is electrically connected to one of the source and drain of transistor 102 . The other one of the source electrode and the drain electrode of the transistor 102 is electrically connected to one electrode of the light-emitting element 104 .

在此，將與電容器113的另一個電極、電晶體111的源極和汲極中的一個、電晶體112的閘極及電容器103的一個電極連接的佈線稱為節點NM1。另外，將與電晶體102的源極和汲極中的另一個及發光元件104的一個電極連接的佈線稱為節點NA1。 Here, a wiring connected to the other electrode of the capacitor 113, one of the source and drain of the transistor 111, the gate of the transistor 112, and one electrode of the capacitor 103 is called node NM1. In addition, a wiring connected to the other one of the source and the drain of the transistor 102 and one electrode of the light-emitting element 104 is called node NA1.

電晶體101的閘極與掃描線GL2電連接。電晶體102的閘極與掃描線GL3電連接。電晶體111的閘極與掃描線GL1電連接。電晶體101的源極和汲極中的另一個與信號線SL2電連接。電晶體111的源極和汲極中的另一個與信號線SL1電連接。 The gate of the transistor 101 is electrically connected to the scan line GL2. The gate of the transistor 102 is electrically connected to the scan line GL3. The gate of the transistor 111 is electrically connected to the scan line GL1. The other one of the source electrode and the drain electrode of the transistor 101 is electrically connected to the signal line SL2. The other one of the source electrode and the drain electrode of the transistor 111 is electrically connected to the signal line SL1.

電晶體112的源極和汲極中的另一個與電位供應線128電連接。發光元件104的另一個電極與共同佈線129電連接。在此，對電位供應線128例如可以供應高電源電位VDD。另外，對共同佈線129可以供應任意電位。 The other one of the source electrode and the drain electrode of the transistor 112 is electrically connected to the potential supply line 128 . The other electrode of the light-emitting element 104 is electrically connected to the common wiring 129 . Here, the potential supply line 128 may be supplied with the high power supply potential VDD, for example. In addition, any potential can be supplied to the common wiring 129 .

電晶體111及電容器113構成記憶體電路MEM。節點NM1為存儲節點，藉由使電晶體111導通，可以將供應給信號線SL1的信號寫入節點NM1。藉由作為電晶體111使用關態電流極低的電晶體，可以長時間地保持節點NM1的電位。作為該電晶體，例如可以使用將金屬氧化物用於通道形成區域的電晶體(以下稱為OS電晶體)。 The transistor 111 and the capacitor 113 constitute a memory circuit MEM. The node NM1 is a storage node, and by turning on the transistor 111, the signal supplied to the signal line SL1 can be written into the node NM1. By using a transistor with an extremely low off-state current as the transistor 111, the potential of the node NM1 can be maintained for a long time. As this transistor, for example, a transistor using a metal oxide in a channel formation region (hereinafter referred to as an OS transistor) can be used.

注意，OS電晶體不僅可以用於電晶體111還可以用於構成像素26的其他的電晶體。另外，作為電晶體111也可以使用通道形成區域中含有Si的電晶體(以下稱為Si電晶體)。或者，也可以使用OS電晶體和Si電晶體的兩 者。注意，作為上述Si電晶體，可以舉出含有非晶矽的電晶體、含有結晶矽(典型地有低溫多晶矽)的電晶體、以及含有單晶矽的電晶體等。 Note that the OS transistor can be used not only for the transistor 111 but also for other transistors constituting the pixel 26 . In addition, as the transistor 111, a transistor containing Si in the channel formation region (hereinafter referred to as a Si transistor) may be used. Alternatively, both OS transistors and Si transistors may be used. Note that the Si transistor includes a transistor containing amorphous silicon, a transistor containing crystalline silicon (typically low-temperature polycrystalline silicon), a transistor containing single crystal silicon, and the like.

作為用於OS電晶體的半導體材料，可以使用能隙為2eV以上，較佳為2.5eV以上，更佳為3eV以上的金屬氧化物。典型的有含有銦的氧化物半導體等，例如，可以使用後面提到的CAAC-OS或CAC-OS等。CAAC-OS中構成晶體的原子穩定，適用於重視可靠性的電晶體等。CAC-OS呈現高移動率特性，適用於進行高速驅動的電晶體等。 As the semiconductor material used for the OS transistor, a metal oxide having an energy gap of 2 eV or more, preferably 2.5 eV or more, and more preferably 3 eV or more can be used. Typical examples include oxide semiconductors containing indium, and for example, CAAC-OS or CAC-OS mentioned later can be used. The atoms constituting the crystal in CAAC-OS are stable, making it suitable for transistors where reliability is important. CAC-OS exhibits high mobility characteristics and is suitable for high-speed drive transistors, etc.

OS電晶體具有大能隙而呈現極低的關態電流特性。與Si電晶體不同，OS電晶體不會發生碰撞電離、突崩潰及短通道效應等，因此能夠形成高可靠性的電路。 OS transistors have a large energy gap and exhibit extremely low off-state current characteristics. Unlike Si transistors, OS transistors do not suffer from impact ionization, sudden collapse, short channel effects, etc., so they can form highly reliable circuits.

當作為顯示元件使用EL元件時，可以使用矽基板，並且可以形成Si電晶體與OS電晶體彼此重疊的區域。由此，即使電晶體的數量較多也能夠實現高像素密度。 When an EL element is used as a display element, a silicon substrate can be used, and a region in which the Si transistor and the OS transistor overlap each other can be formed. As a result, high pixel density can be achieved even if the number of transistors is large.

在像素26中，可以將被寫入節點NM1的信號與從信號線SL2供應的影像信號電容耦合並輸出到節點NA1。電晶體101具有選擇像素的功能。電晶體102具有用作控制發光元件104的發光的開關的功能。 In the pixel 26 , the signal written to the node NM1 can be capacitively coupled with the image signal supplied from the signal line SL2 and output to the node NA1 . The transistor 101 has the function of selecting pixels. The transistor 102 has a function as a switch that controls the light emission of the light-emitting element 104 .

例如，當從信號線SL1寫入節點NM1的信號的電位大於電晶體112的臨界電壓(Vth)時，在影像信號被寫入之前電晶體112就會變為導通而使發光元件104發光。因此，較佳為設置電晶體102並在節點NM1的電位固定之後使電晶體102導通而使發光元件104發光。 For example, when the potential of the signal written from the signal line SL1 to the node NM1 is greater than the threshold voltage (V th ) of the transistor 112 , the transistor 112 becomes conductive and causes the light-emitting element 104 to emit light before the image signal is written. Therefore, it is preferable to provide the transistor 102 and turn on the transistor 102 after the potential of the node NM1 is fixed to cause the light-emitting element 104 to emit light.

也就是說，只要將與處理部40B所形成的校正濾波器FIL對應的校正濾波器信號存儲到節點NM1就可以對影像信號附加該校正濾波器信號。由 此，可以校正影像信號。注意，由於傳輸路徑上的因素有時校正濾波器信號會衰減，因此較佳為考慮該衰減來生成校正濾波器信號。 That is, as long as the correction filter signal corresponding to the correction filter FIL formed by the processing unit 40B is stored in the node NM1, the correction filter signal can be added to the image signal. Thus, the image signal can be corrected. Note that the correction filter signal may sometimes be attenuated due to factors on the transmission path, so it is better to generate the correction filter signal taking this attenuation into consideration.

接著，使用圖12A和圖12B所示的時序圖對像素26的工作方法的一個例子進行說明。作為對信號線SL1供應的校正濾波器信號(Vp)可以使用正電位的信號也可以使用負電位的信號，這裡對供應正電位的信號的情況進行說明。 Next, an example of the operation method of the pixel 26 will be described using the timing chart shown in FIGS. 12A and 12B . As the correction filter signal (Vp) supplied to the signal line SL1, a signal with a positive potential or a signal with a negative potential may be used. Here, a case in which a signal with a positive potential is supplied will be described.

首先，參照圖12A說明將校正濾波器信號(Vp)寫入節點NM1的工作。 First, the operation of writing the correction filter signal (Vp) to the node NM1 will be described with reference to FIG. 12A.

在時刻T1，使掃描線GL1的電位為低電位、掃描線GL2的電位為高電位、信號線SL2的電位為低電位、掃描線GL3的電位為低電位，由此電晶體101變為導通，電容器113的另一個電極的電位變為低電位。 At time T1, the potential of scanning line GL1 is low, the potential of scanning line GL2 is high, the potential of signal line SL2 is low, and the potential of scanning line GL3 is low, thereby turning transistor 101 on. The potential of the other electrode of the capacitor 113 becomes low potential.

該工作是為了後面進行電容耦合的重設工作。在時刻T1之前，發光元件104在前一圖框中發光，然而由於該重設工作節點NM1的電位變化而使流過發光元件104的電流變化，因此較佳為使電晶體102變為非導通而使發光元件104停止發光。 This work is for subsequent reset of capacitive coupling. Before time T1, the light-emitting element 104 emits light in the previous frame. However, due to the potential change of the reset operating node NM1, the current flowing through the light-emitting element 104 changes. Therefore, it is preferable to make the transistor 102 non-conductive. The light-emitting element 104 stops emitting light.

在時刻T2，使掃描線GL1的電位為高電位、掃描線GL2的電位為高電位、信號線SL2的電位為低電位、掃描線GL3的電位為低電位，由此電晶體111變為導通，信號線SL1的電位(校正濾波器信號(Vp))被寫入到節點NM1。 At time T2, the potential of scanning line GL1 is high, the potential of scanning line GL2 is high, the potential of signal line SL2 is low, and the potential of scanning line GL3 is low, thereby turning transistor 111 on. The potential of signal line SL1 (correction filter signal (Vp)) is written to node NM1.

在時刻T3，使掃描線GL1的電位為低電位、掃描線GL2的電位為高電位、信號線SL2的電位為低電位、掃描線GL3的電位為低電位，由此電晶體111變為非導通，校正濾波器信號(Vp)被保持於節點NM1。 At time T3, the potential of scanning line GL1 is low, the potential of scanning line GL2 is high, the potential of signal line SL2 is low, and the potential of scanning line GL3 is low, whereby the transistor 111 becomes non-conductive. , the correction filter signal (Vp) is held at node NM1.

在時刻T4，使掃描線GL1的電位為低電位、掃描線GL2的電位為低電位、信號線SL2的電位為低電位、掃描線GL3的電位為低電位，由此電晶體101變為非導通，而結束校正濾波器信號(Vp)的寫入工作。 At time T4, the potential of scanning line GL1, the potential of scanning line GL2, the potential of signal line SL2, and the potential of scanning line GL3 are set to low potential, thereby making the transistor 101 non-conductive. , and ends the writing work of the correction filter signal (Vp).

接著，參照圖12B說明影像信號(Vs)的校正工作及使發光元件104發光的工作。 Next, the correction operation of the image signal (Vs) and the operation of causing the light-emitting element 104 to emit light will be described with reference to FIG. 12B.

在時刻T11，使掃描線GL1的電位為低電位、掃描線GL2的電位為高電位、信號線SL1的電位為低電位、掃描線GL3的電位為低電位，由此電晶體101變為導通，由於電容器113的電容耦合，信號線SL2的電位被附加到節點NM1的電位。也就是說，節點NM1變為影像信號(Vs)加上校正濾波器信號(Vp)的電位(Vs+Vp)。 At time T11, the potential of scanning line GL1 is low, the potential of scanning line GL2 is high, the potential of signal line SL1 is low, and the potential of scanning line GL3 is low, thereby turning transistor 101 on. Due to the capacitive coupling of the capacitor 113, the potential of the signal line SL2 is added to the potential of the node NM1. That is, the node NM1 becomes the potential (Vs+Vp) of the image signal (Vs) plus the correction filter signal (Vp).

在時刻T12，使掃描線GL1的電位為低電位、掃描線GL2的電位為低電位、信號線SL1的電位為低電位、掃描線GL3的電位為低電位，由此電晶體101變為非導通，節點NM1的電位被固定為Vs+Vp。 At time T12 , the potential of scanning line GL1 is low, the potential of scanning line GL2 is low, the potential of signal line SL1 is low, and the potential of scanning line GL3 is low, so that transistor 101 becomes non-conductive. , the potential of node NM1 is fixed to Vs+Vp.

在時刻T13，使掃描線GL1的電位為低電位、掃描線GL2的電位為低電位、信號線SL1的電位為低電位、掃描線GL3的電位為高電位，由此電晶體102變為導通，節點NA1的電位變為Vs+Vp，發光元件104發光。嚴格地說，節點NA1的電位相當於從Vs+Vp減去電晶體112的臨界電壓(Vth)的值，這裡，Vth為可以忽略不計的極小值。 At time T13, the potential of scanning line GL1 is low, the potential of scanning line GL2 is low, the potential of signal line SL1 is low, and the potential of scanning line GL3 is high, thereby turning transistor 102 on. The potential of node NA1 becomes Vs+Vp, and the light-emitting element 104 emits light. Strictly speaking, the potential of node NA1 is equivalent to the value obtained by subtracting the threshold voltage (V th ) of the transistor 112 from Vs + Vp. Here, V th is a negligible minimum value.

以上是影像信號(Vs)的校正工作及使發光元件104發光的工作。注意，雖然可以連續地進行之前說明的校正濾波器信號(Vp)的寫入工作與影像信號(Vs)的輸入工作，但是可以先對所有的像素寫入校正濾波器信號(Vp)之後進行影像信號(Vs)的輸入工作。 The above is the operation of correcting the image signal (Vs) and the operation of causing the light-emitting element 104 to emit light. Note that although the writing operation of the correction filter signal (Vp) and the input operation of the image signal (Vs) described previously can be performed continuously, the correction filter signal (Vp) can be written to all pixels first and then the imaging can be performed. The input signal (Vs) works.

注意，在不進行校正工作的情況下，也可以藉由對信號線SL1供應影像信號來控制電晶體111及電晶體102的導通及非導通而進行使發光元件104發光的工作。此時，電晶體101經常處於非導通狀態。 Note that without performing the correction operation, the operation of causing the light-emitting element 104 to emit light can also be performed by supplying an image signal to the signal line SL1 to control the conduction or non-conduction of the transistor 111 and the transistor 102 . At this time, the transistor 101 is always in a non-conductive state.

<1-6.像素的結構例子3> <1-6. Pixel structure example 3>

以下對像素26的其他的結構例子參照圖13進行說明。 Other structural examples of the pixel 26 will be described below with reference to FIG. 13 .

圖13是示出像素26的與圖11不同的結構例子的電路圖。圖13所示的結構的像素26包括電晶體121、電晶體122、電晶體123、電容器124、電容器125及液晶元件126。 FIG. 13 is a circuit diagram showing a structural example of the pixel 26 that is different from that of FIG. 11 . The pixel 26 of the structure shown in FIG. 13 includes a transistor 121, a transistor 122, a transistor 123, a capacitor 124, a capacitor 125 and a liquid crystal element 126.

電晶體121的源極和汲極中的一個與電容器124的一個電極電連接。電容器124的另一個電極與電晶體122的源極和汲極中的一個電連接。電晶體122的源極和汲極中的一個與電晶體123的源極和汲極中的一個電連接。電晶體123的源極和汲極中的另一個與電容器125的一個電極電連接。電容器125的一個電極與液晶元件126的一個電極電連接。 One of the source and the drain of the transistor 121 is electrically connected to one electrode of the capacitor 124 . The other electrode of capacitor 124 is electrically connected to one of the source and drain of transistor 122 . One of the source electrode and the drain electrode of the transistor 122 is electrically connected to one of the source electrode and the drain electrode of the transistor 123 . The other one of the source electrode and the drain electrode of the transistor 123 is electrically connected to one electrode of the capacitor 125 . One electrode of the capacitor 125 is electrically connected to one electrode of the liquid crystal element 126 .

在此，將與電容器124的另一個電極、電晶體122的源極和汲極中的一個、以及電晶體123的源極和汲極中的一個連接的佈線稱為節點NM2。另外，與電晶體123的源極和汲極中的另一個、電容器125的一個電極、以及液晶元件126的一個電極連接的佈線稱為節點NA2。 Here, a wiring connected to the other electrode of the capacitor 124, one of the source and the drain of the transistor 122, and one of the source and the drain of the transistor 123 is called node NM2. In addition, a wiring connected to the other of the source and the drain of the transistor 123, one electrode of the capacitor 125, and one electrode of the liquid crystal element 126 is called node NA2.

電晶體121的閘極與掃描線GL2電連接。電晶體122的閘極與掃描線GL1電連接。電晶體123的閘極與掃描線GL3電連接。電晶體121的源極和汲極中的另一個與信號線SL2電連接。電晶體122的源極和汲極中的另一個與信號線SL1電連接。 The gate of the transistor 121 is electrically connected to the scan line GL2. The gate of the transistor 122 is electrically connected to the scan line GL1. The gate of the transistor 123 is electrically connected to the scan line GL3. The other one of the source electrode and the drain electrode of the transistor 121 is electrically connected to the signal line SL2. The other one of the source electrode and the drain electrode of the transistor 122 is electrically connected to the signal line SL1.

電容器125的另一個電極與共同佈線132電連接。液晶元件126的另一個電極與共同佈線133電連接。注意，可以對共同佈線132及共同佈線133供應任意電位。另外，共同佈線132也可以與共同佈線133電連接。 The other electrode of the capacitor 125 is electrically connected to the common wiring 132 . The other electrode of the liquid crystal element 126 is electrically connected to the common wiring 133 . Note that any potential can be supplied to the common wiring 132 and the common wiring 133 . In addition, the common wiring 132 may be electrically connected to the common wiring 133 .

電晶體122及電容器124構成記憶體電路MEM。節點NM2為存儲節點，藉由使電晶體122導通並使電晶體123非導通，可以將供應給信號線SL1的信號寫入節點NM2。藉由作為電晶體122及電晶體123使用關態電流極低的電晶體，可以長時間地保持節點NM2的電位。作為該電晶體，例如可以使用OS電晶體。 The transistor 122 and the capacitor 124 constitute the memory circuit MEM. The node NM2 is a storage node, and by turning on the transistor 122 and non-conducting the transistor 123, the signal supplied to the signal line SL1 can be written into the node NM2. By using transistors with extremely low off-state current as the transistor 122 and the transistor 123, the potential of the node NM2 can be maintained for a long time. As this transistor, for example, an OS transistor can be used.

注意，OS電晶體可以用於像素所包括的其他的電晶體。另外，像素所包括的電晶體也可以使用Si電晶體。或者，也可以使用OS電晶體和Si電晶體的兩者。 Note that the OS transistor may be used with other transistors included in the pixel. In addition, Si transistors may be used as transistors included in the pixels. Alternatively, both OS transistors and Si transistors may be used.

當作為顯示元件使用反射型的液晶元件時，可以使用矽基板，並且可以形成Si電晶體與OS電晶體彼此重疊的區域。由此，即使電晶體的數量較多也能夠實現高像素密度。 When a reflective liquid crystal element is used as a display element, a silicon substrate can be used, and a region in which the Si transistor and the OS transistor overlap each other can be formed. As a result, high pixel density can be achieved even if the number of transistors is large.

在像素26中，可以將被寫入節點NM2的信號與信號線SL2供給的影像信號電容耦合並輸出至節點NA2。電晶體121具有選擇像素並供應影像信號的功能。電晶體123具有用作控制液晶元件126的工作的開關的功能。 In the pixel 26, the signal written to the node NM2 and the image signal supplied from the signal line SL2 can be capacitively coupled and output to the node NA2. The transistor 121 has the function of selecting pixels and supplying image signals. The transistor 123 has a function as a switch that controls the operation of the liquid crystal element 126 .

當從信號線SL1寫入節點NM2的信號的電位大於使液晶元件126工作的臨界值時，在影像信號被寫入之前液晶元件126就會工作。因此，較佳為設置電晶體123並在節點NM2的電位固定之後使電晶體123導通而使液晶元件126工作。 When the potential of the signal written from the signal line SL1 to the node NM2 is greater than the critical value for operating the liquid crystal element 126, the liquid crystal element 126 operates before the image signal is written. Therefore, it is preferable to provide the transistor 123 and turn on the transistor 123 after the potential of the node NM2 is fixed to operate the liquid crystal element 126 .

也就是說，只要將與處理部40B所形成的校正濾波器FIL對應的校正濾波器信號存儲到節點NM2就可以對影像信號附加該校正濾波器信號。由此，可以校正影像信號。注意，由於傳輸路徑上的因素有時校正濾波器信號會衰減，因此較佳為考慮該衰減來生成校正濾波器信號。 That is, as long as the correction filter signal corresponding to the correction filter FIL formed by the processing unit 40B is stored in the node NM2, the correction filter signal can be added to the image signal. Thus, the image signal can be corrected. Note that the correction filter signal may sometimes be attenuated due to factors on the transmission path, so it is better to generate the correction filter signal taking this attenuation into consideration.

接著，使用圖14A和圖14B所示的時序圖對像素26的工作方法的一個例子進行說明。作為對信號線SL1供應的校正濾波器信號(Vp)可以使用正電位的信號也可以使用負電位的信號，這裡對供應正電位的信號的情況進行說明。 Next, an example of the operation method of the pixel 26 will be described using the timing chart shown in FIGS. 14A and 14B. As the correction filter signal (Vp) supplied to the signal line SL1, a signal with a positive potential or a signal with a negative potential may be used. Here, a case in which a signal with a positive potential is supplied will be described.

首先，參照圖14A說明將校正濾波器信號(Vp)寫入節點NM2的工作。 First, the operation of writing the correction filter signal (Vp) to the node NM2 will be described with reference to FIG. 14A.

在時刻T1，使掃描線GL1的電位為高電位、掃描線GL2的電位為低電位、信號線SL2的電位為低電位、掃描線GL3的電位為高電位，由此電晶體122及電晶體123變為導通，節點NA2的電位變為信號線SL1的電位。此時，藉由使信號線SL1的電位變為重設電位(例如，0V等的參考電位)，可以使液晶元件126的工作重設。 At time T1, the potential of scanning line GL1 is high potential, the potential of scanning line GL2 is low potential, the potential of signal line SL2 is low potential, and the potential of scanning line GL3 is high potential, whereby transistor 122 and transistor 123 It becomes conductive, and the potential of node NA2 becomes the potential of signal line SL1. At this time, by changing the potential of the signal line SL1 to a reset potential (for example, a reference potential such as 0V), the operation of the liquid crystal element 126 can be reset.

注意，時刻T1之前是進行前一圖框的液晶元件126的顯示工作的狀態。 Note that before time T1, the display operation of the liquid crystal element 126 of the previous frame is in progress.

在時刻T2，使掃描線GL1的電位為低電位、掃描線GL2的電位為高電位、信號線SL2的電位為低電位、掃描線GL3的電位為低電位，由此電晶體121變為導通，電容器124的另一個電極的電位變為低電位。該工作是為了後面進行電容耦合的重設工作。 At time T2, the potential of scanning line GL1 is low, the potential of scanning line GL2 is high, the potential of signal line SL2 is low, and the potential of scanning line GL3 is low, thereby turning transistor 121 on. The potential of the other electrode of the capacitor 124 becomes low potential. This work is for subsequent reset of capacitive coupling.

在時刻T3，使掃描線GL1的電位為高電位、掃描線GL2的電位為高電位、信號線SL2的電位為低電位、掃描線GL3的電位為低電位，由此電晶體122變為導通，信號線SL1的電位(校正濾波器信號(Vp))被寫入節點NM2。注意，信號線SL1的電位較佳為在時刻T2之後且時刻T3之前被固定為所希望的值(校正濾波器信號(Vp))。 At time T3, the potential of scanning line GL1 is high, the potential of scanning line GL2 is high, the potential of signal line SL2 is low, and the potential of scanning line GL3 is low, thereby turning transistor 122 on. The potential of signal line SL1 (correction filter signal (Vp)) is written in node NM2. Note that the potential of the signal line SL1 is preferably fixed to a desired value (correction filter signal (Vp)) after time T2 and before time T3.

在時刻T4，使掃描線GL1的電位為低電位、掃描線GL2的電位為高電位、信號線SL2的電位為低電位、掃描線GL3的電位為低電位，由此電晶體122變為非導通，校正濾波器信號(Vp)被保持於節點NM2。 At time T4, the potential of scanning line GL1 is low, the potential of scanning line GL2 is high, the potential of signal line SL2 is low, and the potential of scanning line GL3 is low, whereby transistor 122 becomes non-conductive. , the correction filter signal (Vp) is held at node NM2.

在時刻T5，使掃描線GL1的電位為低電位、掃描線GL2的電位為低電位、信號線SL2的電位為低電位、掃描線GL3的電位為低電位，由此電晶體121變為非導通，而結束校正濾波器信號(Vp)的寫入工作。 At time T5, the potential of scanning line GL1, the potential of scanning line GL2, the potential of signal line SL2, and the potential of scanning line GL3 are set to low potential, thereby making the transistor 121 non-conductive. , and ends the writing work of the correction filter signal (Vp).

接著，參照圖14B說明影像信號(Vs)的校正工作及液晶元件126的顯示工作。 Next, the correction operation of the image signal (Vs) and the display operation of the liquid crystal element 126 will be described with reference to FIG. 14B.

在時刻T11，使掃描線GL1的電位為低電位、掃描線GL2的電位為低電位、信號線SL1的電位為低電位、掃描線GL3的電位為高電位，由此電晶體123變為導通，節點NM2的電位分配於節點NA2。注意，較佳為考慮分配於節點NA2的電位而設定保持在節點NM2中的校正濾波器信號(Vp)。 At time T11, the potential of scanning line GL1 is low, the potential of scanning line GL2 is low, the potential of signal line SL1 is low, and the potential of scanning line GL3 is high, thereby turning transistor 123 on. The potential of node NM2 is distributed to node NA2. Note that the correction filter signal (Vp) held in the node NM2 is preferably set in consideration of the potential assigned to the node NA2.

在時刻T12，使掃描線GL1的電位為低電位、掃描線GL2的電位為高電位、信號線SL1的電位為低電位、掃描線GL3的電位為高電位，由此電晶體121變為導通，由於電容器124的電容耦合，信號線SL2的電位被附加到節點NA2的電位。也就是說，節點NA2變為與影像信號(Vs)加上校正濾波器信號 (Vp)的電位對應的電位(Vs+Vp)’。注意，電位(Vs+Vp)’包括由於佈線之間的電容的電容耦合的電位的變動等。 At time T12, the potential of scanning line GL1 is low, the potential of scanning line GL2 is high, the potential of signal line SL1 is low, and the potential of scanning line GL3 is high, thereby turning transistor 121 on. Due to the capacitive coupling of the capacitor 124, the potential of the signal line SL2 is added to the potential of the node NA2. That is, the node NA2 becomes the potential (Vs+Vp)' corresponding to the potential of the image signal (Vs) plus the correction filter signal (Vp). Note that the potential (Vs+Vp)' includes changes in potential due to capacitive coupling of capacitance between wirings and the like.

在時刻T13，使掃描線GL1的電位為低電位、掃描線GL2的電位為低電位、信號線SL1的電位為低電位、掃描線GL3的電位為低電位，由此電晶體121變為非導通，電位(Vs+Vp)’保持於節點NA2。並且，液晶元件126根據該電位進行顯示工作。 At time T13 , the potential of scanning line GL1 , the potential of scanning line GL2 is low, the potential of signal line SL1 is low, and the potential of scanning line GL3 is low, whereby the transistor 121 becomes non-conductive. , the potential (Vs+Vp)' is maintained at node NA2. Then, the liquid crystal element 126 performs a display operation based on this potential.

以上是影像信號(Vs)的校正工作及液晶元件126的顯示工作的說明。注意，雖然可以連續地進行之前說明的校正濾波器信號(Vp)的寫入工作與影像信號(Vs)的輸入工作，但是可以先對所有的像素寫入校正濾波器信號(Vp)之後進行影像信號(Vs)的輸入工作。 The above is the description of the correction operation of the image signal (Vs) and the display operation of the liquid crystal element 126 . Note that although the writing operation of the correction filter signal (Vp) and the input operation of the image signal (Vs) described previously can be performed continuously, the correction filter signal (Vp) can be written to all pixels first and then the imaging can be performed. The input signal (Vs) works.

注意，在不進行校正工作的情況下，也可以藉由對信號線SL1供應影像信號來控制電晶體122及電晶體123的導通及非導通而進行由液晶元件126的顯示工作。此時，電晶體121經常處於非導通狀態。 Note that without performing the correction operation, the display operation of the liquid crystal element 126 can also be performed by supplying an image signal to the signal line SL1 to control the conduction or non-conduction of the transistor 122 and the transistor 123 . At this time, the transistor 121 is always in a non-conductive state.

<1-7.顯示裝置的工作方法的一個例子2> <1-7. An example of the operation method of the display device 2>

接著，參照圖15所示的流程圖對圖5A所示的步驟S01及圖5B所示的步驟S11的具體例子，就是對應於一個顯示面板DP的校正濾波器的形成方法的一個例子進行說明。例如，藉由圖15所示的方法可以形成對應於顯示面板DP[1，1]的校正濾波器的第一校正濾波器及對應於顯示面板DP[2，1]的校正濾波器的第二校正濾波器。藉由圖15所示的方法形成的校正濾波器例如具有校正影像資料以減少顯示在顯示面板DP上的影像的顯示不均勻的功能。 Next, a specific example of step S01 shown in FIG. 5A and step S11 shown in FIG. 5B , which is an example of a method of forming a correction filter corresponding to one display panel DP, will be described with reference to the flowchart shown in FIG. 15 . For example, a first correction filter corresponding to the correction filter of the display panel DP[1,1] and a second correction filter corresponding to the correction filter of the display panel DP[2,1] can be formed by the method shown in FIG. 15 Correction filter. The correction filter formed by the method shown in FIG. 15 has, for example, the function of correcting image data to reduce display unevenness of the image displayed on the display panel DP.

首先，對多個灰階值進行從設置在顯示面板DP中的像素發射的光的亮度的測定。在此，利用亮度計等測定光的亮度(步驟S21)。接著，根 據測定結果，例如處理部40A或處理部40B得到從像素發射的光的亮度和灰階值的對應關係的資料(步驟S22)。圖16A-1及圖16B-1是表示從像素發射的光的亮度和灰階值的關係的圖表，圖16A-1所示的標繪是步驟S21中測定的亮度。另外，圖16B-1所示的實線是根據圖16A-1所示的測定結果在步驟S22中算出的從像素發射的光的亮度和灰階值的對應關係。 First, the brightness of light emitted from the pixels provided in the display panel DP is measured for a plurality of grayscale values. Here, the brightness of the light is measured using a luminance meter or the like (step S21). Next, based on the measurement results, for example, the processing unit 40A or the processing unit 40B obtains data on the correspondence between the brightness of the light emitted from the pixel and the gray scale value (step S22). 16A-1 and 16B-1 are graphs showing the relationship between the brightness of light emitted from a pixel and the gray scale value. The plot shown in FIG. 16A-1 is the brightness measured in step S21. In addition, the solid line shown in FIG. 16B-1 is the correspondence relationship between the brightness of the light emitted from the pixel and the gray scale value calculated in step S22 based on the measurement results shown in FIG. 16A-1.

在此，在步驟S21中，也可以對所有的灰階值進行從像素發射的光的亮度的測定。例如，在像素能夠表示的灰階值為0至255的情況下，對灰階值為0至255的所有的灰階值可以進行從像素發射的光的亮度的測定。或者，對一部分的灰階值進行從像素發射的光的亮度的測定。注意，即使為對一部分的灰階值進行亮度的測定的情況，也為了提高對應關係的資料的精度，較佳為至少對白色、黑色及中間灰階進行亮度的測定。例如，在像素能夠表示的灰階值為0至255的情況下，較佳為至少對灰階值0、灰階值127及灰階值255進行從像素發射的光的亮度的測定。 Here, in step S21, the brightness of the light emitted from the pixels may be measured for all gray scale values. For example, when the grayscale values that the pixel can represent are 0 to 255, the brightness of the light emitted from the pixel can be measured for all grayscale values 0 to 255. Alternatively, the brightness of the light emitted from the pixel is measured for a part of the grayscale values. Note that even if the brightness is measured on a part of the grayscale values, in order to improve the accuracy of the correspondence data, it is preferable to measure the brightness on at least white, black, and intermediate grayscales. For example, when the grayscale values that a pixel can represent are 0 to 255, it is preferable to measure the brightness of light emitted from the pixel for at least the grayscale value 0, the grayscale value 127, and the grayscale value 255.

根據圖16A-1所示的測定結果，例如藉由回歸分析能夠得到圖16B-1所示的對應關係的資料。例如，藉由曲線回歸分析可以得到圖16B-1所示的對應關係的資料。或者，例如可以藉由使用神經網路，如全連接型神經網路得到圖16B-1所示的對應關係的資料。藉由使用神經網路得到圖16B-1所示的對應關係的資料，即使圖16A-1所示的測定數量少，也能夠提高對應關係的資料的精度。 Based on the measurement results shown in Fig. 16A-1, the data of the correspondence relationship shown in Fig. 16B-1 can be obtained, for example, by regression analysis. For example, the corresponding relationship data shown in Figure 16B-1 can be obtained through curve regression analysis. Alternatively, for example, the data of the corresponding relationship shown in Figure 16B-1 can be obtained by using a neural network, such as a fully connected neural network. By using a neural network to obtain the data of the correspondence relationship shown in FIG. 16B-1 , even if the number of measurements shown in FIG. 16A-1 is small, the accuracy of the data of the correspondence relationship can be improved.

圖16A-2示出在步驟S21中對紅色(R)、綠色(G)及藍色(B)的每一個進行從像素發射的廣的亮度的測定時的測定值。圖16B-2示出在步驟 S22中根據圖16A-2所示的測定結果算出的紅色(R)、綠色(G)及藍色(B)的每一個的從像素發射的光的亮度和灰階值的對應關係。 FIG. 16A-2 shows the measurement values when the wide luminance emitted from the pixels is measured for each of red (R), green (G), and blue (B) in step S21. FIG. 16B-2 shows the brightness and gray value of the light emitted from the pixels for each of red (R), green (G), and blue (B) calculated in step S22 based on the measurement results shown in FIG. 16A-2 . Correspondence between order values.

如圖16A-2及圖16B-2所示那樣，藉由得到從像素發射的光的每一種顏色的亮度和灰階值的對應關係的資料，能夠形成可以進行高精度的校正的校正濾波器。 As shown in FIG. 16A-2 and FIG. 16B-2 , by obtaining data on the correspondence between the brightness and the grayscale value of each color of light emitted from the pixel, a correction filter that can perform high-precision correction can be formed. .

圖17A、圖17B及圖17C示出在步驟S21中測定所發射的光的亮度的像素的位置的一個例子。在此，像素部21是指設置在一個顯示面板DP中的像素部，如像素部21A及像素部21B等。在步驟S21中，對從包含在圖17A、圖17B及圖17C所示的區域27中的像素發射的光的亮度進行測定。 17A, 17B, and 17C show an example of the position of the pixel for measuring the brightness of the emitted light in step S21. Here, the pixel portion 21 refers to a pixel portion provided in one display panel DP, such as the pixel portion 21A and the pixel portion 21B. In step S21, the brightness of the light emitted from the pixels included in the area 27 shown in FIGS. 17A, 17B, and 17C is measured.

如圖17A所示那樣，也可以以包括像素部21的中心部的方式對從像素發射的光的亮度進行測定。或者，如圖17B所示那樣，也可以對像素部21的多個部分，如左上部分、右上部分、左下部分及右下部分的四個部分進行測定。或者，如圖17C所示那樣，也可以對像素部21整體進行測定。在區域27的總面積小時，可以以簡單方法對從像素發射的光的亮度進行測定。另一方面，在區域27的總面積大時，能夠形成可以進行高精度的校正的校正濾波器。 As shown in FIG. 17A , the brightness of the light emitted from the pixel may be measured including the center portion of the pixel portion 21 . Alternatively, as shown in FIG. 17B , a plurality of portions of the pixel portion 21 may be measured, such as four portions: the upper left portion, the upper right portion, the lower left portion, and the lower right portion. Alternatively, as shown in FIG. 17C , the entire pixel unit 21 may be measured. When the total area of area 27 is small, the brightness of the light emitted from the pixels can be measured in a simple way. On the other hand, when the total area of the region 27 is large, a correction filter capable of highly accurate correction can be formed.

注意，在對從多個像素的每一個發射的光的亮度分別進行測定時，例如也可以在步驟S22中根據從每個像素發射的光的亮度的平均值得到從像素發射的光的亮度和灰階值的對應關係的資料。 Note that when the brightness of the light emitted from each of the plurality of pixels is measured separately, for example, in step S22, the sum of the brightness of the light emitted from the pixels may be obtained based on the average value of the brightness of the light emitted from each pixel. Data on the correspondence between grayscale values.

在結束步驟S22之後，將預定的灰階值的影像顯示在像素部21上且利用二維亮度計等對從像素發射的光的亮度進行測定，而得到亮度資料(步驟S23)。例如，藉由利用二維亮度計等對從設置在像素部21中的所有的像素發射的光的亮度進行測定，而得到亮度資料。 After step S22 is completed, an image with a predetermined gray scale value is displayed on the pixel unit 21 and the brightness of the light emitted from the pixel is measured using a two-dimensional luminance meter or the like to obtain brightness data (step S23). For example, the luminance data is obtained by measuring the luminance of light emitted from all pixels provided in the pixel unit 21 using a two-dimensional luminance meter or the like.

在作為預定的灰階值的影像，將所有的像素的灰階值相等的影像顯示在像素部21上時，較佳為從設置在一個顯示面板DP中的所有的像素發射的光的亮度相同。但是，由於像素所包括的電晶體的特性的不均勻及顯示元件的特性的不均勻等，有時導致從像素發射的光的亮度的不均勻。在步驟S23中，為了得到關於從像素發射的光的亮度的像素間的不均勻的資訊，得到亮度資料。 When an image with a predetermined gray scale value, in which all pixels have the same gray scale value, is displayed on the pixel unit 21 , it is preferable that the brightness of the light emitted from all the pixels provided in one display panel DP is the same. . However, unevenness in the characteristics of the transistors included in the pixels, unevenness in the characteristics of the display elements, etc. may cause unevenness in the brightness of the light emitted from the pixels. In step S23, in order to obtain information on inter-pixel unevenness in the brightness of light emitted from the pixels, brightness data is obtained.

接著，使用步驟S23中得到的亮度資料及步驟S22中得到的對應關係的資料，由處理部形成用來校正從像素發射的光的亮度的像素間的不均勻的校正濾波器(步驟S24)。例如，形成如下校正濾波器，亦即在根據亮度資料得知的某個像素的灰階值127的亮度為100且根據對應關係的資料，灰階值127的亮度為120時，該校正濾波器使該像素的亮度為1.2倍。 Next, using the brightness data obtained in step S23 and the correspondence data obtained in step S22, the processing unit forms a correction filter for correcting inter-pixel unevenness in the brightness of light emitted from the pixels (step S24). For example, the following correction filter is formed, that is, when the brightness of the grayscale value 127 of a certain pixel is 100 based on the brightness data and the brightness of the grayscale value 127 is 120 according to the corresponding data, the correction filter Make that pixel 1.2 times brighter.

此時，在步驟S22中，例如得到對於所有的灰階值的與亮度的對應關係的資料。因此，在步驟S23中顯示兩種以上的影像並得到每個影像的亮度資料，能夠形成可以進行更高精度的校正的校正濾波器。例如，在像素能夠表示的灰階值為0至255的情況下，在步驟S23中可以得到所有的像素的灰階為0的影像的亮度資料、所有的像素的灰階為127的影像的亮度資料及所有的像素的灰階為255的影像的亮度資料。注意，為了使步驟S23中的光的亮度的測定簡單，步驟S23中得到的亮度資料的種類較佳為少於步驟S21中測定光的亮度的灰階值數量。 At this time, in step S22, for example, data on the correspondence relationship between all gray scale values and brightness is obtained. Therefore, by displaying two or more images and obtaining the brightness data of each image in step S23, a correction filter capable of higher-precision correction can be formed. For example, when the grayscale value that a pixel can represent is 0 to 255, in step S23, the brightness data of the image with a grayscale of all pixels being 0 and the brightness data of an image with a grayscale of all pixels being 127 can be obtained. data and the brightness data of the image with a grayscale of 255 for all pixels. Note that in order to simplify the measurement of the brightness of light in step S23, the type of brightness data obtained in step S23 is preferably less than the number of grayscale values used to measure the brightness of light in step S21.

然後，對處理部40A或處理部40B輸入影像資料且使用步驟S24中形成的校正濾波器對被輸入的影像資料進行校正(步驟S25)。在此，被輸入到處理部40A或處理部40B的影像資料較佳為例如與預定的灰階值的影像對應的 影像資料。例如，較佳為與其灰階與步驟S23中顯示的影像的灰階相同的影像對應的影像資料。 Then, the image data is input to the processing unit 40A or the processing unit 40B, and the input image data is corrected using the correction filter formed in step S24 (step S25). Here, the image data input to the processing unit 40A or the processing unit 40B is preferably, for example, image data corresponding to an image with a predetermined grayscale value. For example, it is preferable to use image data corresponding to an image whose grayscale is the same as that of the image displayed in step S23.

接著，在像素部21中顯示與步驟S25中校正了的影像資料對應的影像，並且與步驟S23同樣地使用二維亮度計等對從像素發射的光的亮度進行測定(步驟S26)。然後，在每一個像素中對與步驟S26中測定的校正之後的影像對應的亮度和根據步驟S22中得到的對應關係的資料算出的亮度進行比較。例如，在與校正之後的影像對應的亮度和根據步驟S22中得到的對應關係的資料算出的亮度的差異小於定值時，判定校正的精度為規定值以上而結束校正濾波器的形成。另一方面，在與校正之後的影像對應的亮度和根據步驟S22中得到的對應關係的資料算出的亮度的差異為預定值以上時，判定校正的精度小於規定值而再進行步驟S24及步驟S27，來再形成校正濾波器(步驟S27)。以上是顯示裝置10A及顯示裝置10B中使用的校正濾波器的形成方法的一個例子。注意，也可以省略步驟S26及步驟S27。 Next, the image corresponding to the image data corrected in step S25 is displayed on the pixel unit 21, and the brightness of the light emitted from the pixel is measured using a two-dimensional luminance meter or the like in the same manner as step S23 (step S26). Then, in each pixel, the brightness corresponding to the corrected image measured in step S26 is compared with the brightness calculated based on the data of the correspondence relationship obtained in step S22. For example, when the difference between the brightness corresponding to the corrected image and the brightness calculated based on the correspondence data obtained in step S22 is less than a predetermined value, it is determined that the accuracy of the correction is greater than the predetermined value and the formation of the correction filter is completed. On the other hand, when the difference between the brightness corresponding to the corrected image and the brightness calculated based on the correspondence data obtained in step S22 is more than a predetermined value, it is determined that the accuracy of the correction is less than the predetermined value, and steps S24 and S27 are performed again. , to form the correction filter again (step S27). The above is an example of the formation method of the correction filter used in the display device 10A and the display device 10B. Note that steps S26 and S27 may also be omitted.

注意，在步驟S23中顯示兩種以上的影像的情況下，在步驟S26中對每個影像進行從像素發射的光的亮度的測定，在步驟S27中判定每個影像的校正的精度。 Note that when two or more images are displayed in step S23, the brightness of the light emitted from the pixels is measured for each image in step S26, and the accuracy of correction of each image is determined in step S27.

以上是圖5A所示的步驟S01及圖5B所示的步驟S11的具體例子，換言之，對應於一個顯示面板DP的校正濾波器的形成方法的一個例子。 The above is a specific example of step S01 shown in FIG. 5A and step S11 shown in FIG. 5B , in other words, an example of a method of forming a correction filter corresponding to one display panel DP.

藉由以圖15所示的方法形成校正濾波器，例如可以減少所顯示的影像的顯示不均勻，因此能夠提高本發明的一個實施方式的顯示裝置的顯示品質。 By forming the correction filter in the method shown in FIG. 15 , for example, the display unevenness of the displayed image can be reduced, and therefore the display quality of the display device according to one embodiment of the present invention can be improved.

本實施方式可以與其他實施方式等所記載的結構適當地組合而實施。 This embodiment can be implemented in appropriate combination with the structures described in other embodiments and the like.

實施方式2 Embodiment 2

在本實施方式中對使用液晶元件的顯示裝置的結構例子及使用EL元件的顯示裝置的結構例子進行說明。注意，在本實施方式中省略實施方式1已說明的顯示裝置的組件、工作及功能。 In this embodiment, a structural example of a display device using a liquid crystal element and a structural example of a display device using an EL element will be described. Note that the components, operations, and functions of the display device described in Embodiment 1 are omitted in this embodiment.

圖18A及圖18B是示出本發明的一個實施方式的顯示裝置的結構例子的剖面圖。圖18A及圖18B所示的顯示裝置包括電極4015，該電極4015與FPC4018的端子藉由各向異性導電層4019電連接。另外，在圖18A及圖18B中，電極4015在形成於絕緣層4112、絕緣層4111及絕緣層4110的開口中與佈線4014電連接。 18A and 18B are cross-sectional views showing a structural example of a display device according to an embodiment of the present invention. The display device shown in FIG. 18A and FIG. 18B includes an electrode 4015, and the electrode 4015 is electrically connected to the terminal of the FPC 4018 through an anisotropic conductive layer 4019. In addition, in FIGS. 18A and 18B , the electrode 4015 is electrically connected to the wiring 4014 in the openings formed in the insulating layer 4112 , the insulating layer 4111 and the insulating layer 4110 .

電極4015與第一電極層4030使用同一導電層形成，佈線4014與電晶體4010及電晶體4011的源極電極及汲極電極使用同一導電層形成。 The electrode 4015 and the first electrode layer 4030 are formed using the same conductive layer, and the wiring 4014 and the source electrode and drain electrode of the transistor 4010 and the transistor 4011 are formed using the same conductive layer.

另外，設置在第一基板4001上的顯示部215和掃描線驅動電路221包括多個電晶體。在圖18A及圖18B中，示出顯示部215中的電晶體4010及掃描線驅動電路221中的電晶體4011。雖然圖18A及圖18B中作為電晶體4010及電晶體4011示出底閘極型電晶體，但是也可以使用頂閘極型電晶體。 In addition, the display portion 215 and the scanning line driving circuit 221 provided on the first substrate 4001 include a plurality of transistors. In FIGS. 18A and 18B , the transistor 4010 in the display unit 215 and the transistor 4011 in the scanning line driver circuit 221 are shown. Although bottom gate transistors are shown as the transistor 4010 and the transistor 4011 in FIGS. 18A and 18B , top gate transistors may also be used.

在圖18A及圖18B中，在電晶體4010及電晶體4011上設置有絕緣層4112。另外，在圖18B中，絕緣層4112上形成有分隔壁4510。 In FIGS. 18A and 18B , an insulating layer 4112 is provided on the transistor 4010 and the transistor 4011 . In addition, in FIG. 18B , a partition wall 4510 is formed on the insulating layer 4112 .

另外，電晶體4010及電晶體4011設置在絕緣層4102上。另外，電晶體4010及電晶體4011包括形成在絕緣層4111上的電極4017。電極4017可以用作背閘極電極。 In addition, the transistor 4010 and the transistor 4011 are provided on the insulating layer 4102. In addition, the transistor 4010 and the transistor 4011 include electrodes 4017 formed on the insulating layer 4111. Electrode 4017 may serve as a back gate electrode.

另外，圖18A及圖18B所示的顯示裝置包括電容器4020。電容器4020包括以與電晶體4010的閘極電極同一製程形成的電極4021以及以與源極電極及汲極電極同一製程形成的電極。每個電極具有隔著絕緣層4103彼此重疊的區域。 In addition, the display device shown in FIG. 18A and FIG. 18B includes a capacitor 4020. The capacitor 4020 includes an electrode 4021 formed by the same process as the gate electrode of the transistor 4010 and electrodes formed by the same process as the source electrode and the drain electrode. Each electrode has an area overlapping each other with the insulating layer 4103 interposed therebetween.

一般而言，考慮在像素部中配置的電晶體的洩漏電流等設定在顯示裝置的像素部中設置的電容器的容量以使其能夠在指定期間保持電荷。電容器的容量考慮電晶體的關態電流等設定即可。 Generally speaking, the capacitance of the capacitor provided in the pixel portion of the display device is set so that it can hold the charge for a predetermined period, taking into account the leakage current of the transistor arranged in the pixel portion. The capacitance of the capacitor can be set taking into account the off-state current of the transistor.

設置在顯示部215中的電晶體4010與顯示元件電連接。圖18A是作為顯示元件使用液晶元件的液晶顯示裝置的一個例子。在圖18A中，作為顯示元件的液晶元件4013包括第一電極層4030、第二電極層4031以及液晶層4008。注意，以夾持液晶層4008的方式設置有被用作配向膜的絕緣層4032及絕緣層4033。第二電極層4031設置在第二基板4006一側，第一電極層4030與第二電極層4031隔著液晶層4008重疊。 The transistor 4010 provided in the display part 215 is electrically connected to the display element. FIG. 18A is an example of a liquid crystal display device using a liquid crystal element as a display element. In FIG. 18A , a liquid crystal element 4013 as a display element includes a first electrode layer 4030, a second electrode layer 4031, and a liquid crystal layer 4008. Note that the insulating layer 4032 and the insulating layer 4033 used as an alignment film are provided sandwiching the liquid crystal layer 4008. The second electrode layer 4031 is disposed on the second substrate 4006 side, and the first electrode layer 4030 and the second electrode layer 4031 overlap with the liquid crystal layer 4008 interposed therebetween.

間隔物4035是藉由對絕緣層選擇性地進行蝕刻而得到的柱狀間隔物，並且它是為控制第一電極層4030和第二電極層4031之間的間隔(單元間隙)而設置的。注意，還可以使用球狀間隔物。 The spacer 4035 is a columnar spacer obtained by selectively etching the insulating layer, and is provided to control the distance (cell gap) between the first electrode layer 4030 and the second electrode layer 4031. Note that ball spacers can also be used.

此外，根據需要，可以適當地設置黑矩陣(遮光層)、彩色層(濾色片)、偏振構件、相位差構件、抗反射構件等的光學構件(光學基板)等。例如，也可以使用利用偏振基板以及相位差基板的圓偏振。此外，作為光源，也可以使用背光或側光等。作為上述背光或側光，也可以使用Micro-LED等。 In addition, as necessary, optical members (optical substrates) such as a black matrix (light-shielding layer), a color layer (color filter), a polarizing member, a phase difference member, an anti-reflection member, etc. may be appropriately provided. For example, circular polarization using a polarizing substrate and a phase difference substrate may be used. In addition, as the light source, backlight, side light, etc. may also be used. As the above-mentioned backlight or side light, Micro-LED or the like can also be used.

在圖18A所示的顯示裝置中，在第二基板4006和第二電極層4031之間設置有遮光層4132、彩色層4131及絕緣層4133。 In the display device shown in FIG. 18A , a light-shielding layer 4132, a color layer 4131, and an insulating layer 4133 are provided between the second substrate 4006 and the second electrode layer 4031.

作為能夠用於遮光層的材料，可以舉出碳黑、鈦黑、金屬、金屬氧化物或包含多個金屬氧化物的固溶體的複合氧化物等。遮光層也可以為包含樹脂材料的膜或包含金屬等無機材料的薄膜。另外，也可以對遮光層使用包含彩色層的材料的膜的疊層膜。例如，可以採用包含用於使某個顏色的光透過的彩色層的材料的膜與包含用於使其他顏色的光透過的彩色層的材料的膜的疊層結構。藉由使彩色層與遮光層的材料相同，除了可以使用相同的設備以外，還可以實現製程簡化，因此是較佳的。 Examples of materials that can be used for the light-shielding layer include carbon black, titanium black, metals, metal oxides, and composite oxides containing a solid solution of a plurality of metal oxides. The light-shielding layer may be a film containing a resin material or a thin film containing an inorganic material such as metal. In addition, a laminated film including a film of a color layer material may be used for the light-shielding layer. For example, a laminated structure may be adopted in which a film containing a material of a color layer that transmits light of a certain color and a film containing a material of a color layer that transmits light of another color may be adopted. By using the same material for the color layer and the light-shielding layer, the same equipment can be used and the manufacturing process can be simplified, which is therefore preferable.

作為能夠用於彩色層的材料，可以舉出金屬材料、樹脂材料、包含顏料或染料的樹脂材料等。遮光層及彩色層可以與上面所述的每個層的形成方法同樣地形成。例如可以利用噴墨法等形成。 Examples of materials that can be used for the color layer include metal materials, resin materials, resin materials containing pigments or dyes, and the like. The light-shielding layer and the color layer can be formed in the same manner as the formation method of each layer described above. For example, it can be formed using an inkjet method or the like.

另外，圖18A及圖18B所示的顯示裝置包括絕緣層4111及絕緣層4104。作為絕緣層4111及絕緣層4104，使用不易使雜質元素透過的絕緣層。藉由由絕緣層4111和絕緣層4104夾持電晶體的半導體層，可以防止來自外部的雜質的混入。 In addition, the display device shown in FIG. 18A and FIG. 18B includes an insulating layer 4111 and an insulating layer 4104. As the insulating layer 4111 and the insulating layer 4104, an insulating layer that does not easily transmit impurity elements is used. By sandwiching the semiconductor layer of the transistor between the insulating layer 4111 and the insulating layer 4104, the mixing of impurities from the outside can be prevented.

此外，作為顯示裝置所包括的顯示元件，可以應用利用電致發光的發光元件(也稱為EL元件)。EL元件在一對電極之間具有包含發光化合物的層(也稱為EL層)。當使一對電極之間產生高於EL元件的臨界電壓的電位差時，電洞從陽極一側注入到EL層中，而電子從陰極一側注入到EL層中。被注入的電子和電洞在EL層中再結合，由此，包含在EL層中的發光化合物發光。 In addition, as a display element included in the display device, a light-emitting element using electroluminescence (also referred to as an EL element) can be applied. The EL element has a layer containing a light-emitting compound (also called an EL layer) between a pair of electrodes. When a potential difference higher than the critical voltage of the EL element is generated between a pair of electrodes, holes are injected into the EL layer from the anode side, and electrons are injected into the EL layer from the cathode side. The injected electrons and holes are recombined in the EL layer, whereby the light-emitting compound contained in the EL layer emits light.

EL元件根據發光材料是有機化合物還是無機化合物被區別，通常前者被稱為有機EL元件，而後者被稱為無機EL元件。 EL elements are distinguished according to whether the light-emitting material is an organic compound or an inorganic compound. The former is generally called an organic EL element, while the latter is called an inorganic EL element.

在有機EL元件中，藉由施加電壓，電子從一個電極注入到EL層中，而電洞從另一個電極注入到EL層中。藉由這些載子(電子及電洞)再結合，發光有機化合物形成激發態，當從該激發態回到基態時發光。由於這種機制，這種發光元件被稱為電流激發型發光元件。 In an organic EL element, by applying a voltage, electrons are injected into the EL layer from one electrode, and holes are injected into the EL layer from the other electrode. By the recombination of these carriers (electrons and holes), the luminescent organic compound forms an excited state, and emits light when it returns to the ground state from the excited state. Due to this mechanism, this type of light-emitting element is called a current-excited light-emitting element.

EL層除了發光化合物以外也可以還包括電洞注入性高的物質、電洞傳輸性高的物質、電洞阻擋材料、電子傳輸性高的物質、電子注入性高的物質或雙極性的物質(電子傳輸性及電洞傳輸性高的物質)等。 In addition to the light-emitting compound, the EL layer may also include a material with high hole injection properties, a material with high hole transport properties, a hole blocking material, a material with high electron transport properties, a material with high electron injection properties, or a bipolar material ( Substances with high electron transport properties and hole transport properties), etc.

EL層可以藉由蒸鍍法(包括真空蒸鍍法)、轉印法、印刷法、噴墨法、塗佈法等的方法形成。 The EL layer can be formed by methods such as evaporation (including vacuum evaporation), transfer, printing, inkjet, and coating.

無機EL元件根據其元件結構而分類為分散型無機EL元件和薄膜型無機EL元件。分散型無機EL元件包括發光層，其中發光材料的粒子分散在黏合劑中，並且其發光機制是利用施體能階和受體能階的施體-受體再結合型發光。薄膜型無機EL元件是其中發光層夾在電介質層之間，並且該夾著發光層的電介質層夾在電極之間的結構，其發光機制是利用金屬離子的內殼層電子躍遷的局部型發光。注意，這裡作為發光元件使用有機EL元件進行說明。 Inorganic EL elements are classified into dispersed inorganic EL elements and thin film inorganic EL elements based on their element structures. The dispersed inorganic EL element includes a light-emitting layer in which particles of the light-emitting material are dispersed in a binder, and its light-emitting mechanism is a donor-acceptor recombination type light emission that utilizes donor energy levels and acceptor energy levels. Thin-film inorganic EL elements have a structure in which a light-emitting layer is sandwiched between dielectric layers, and the dielectric layer sandwiching the light-emitting layer is sandwiched between electrodes. Its light-emitting mechanism is localized light-emitting using inner shell electron transition of metal ions. . Note that an organic EL element is used as the light-emitting element in the description here.

為了取出發光，使發光元件的一對電極中的至少一個為透明。在基板上形成有電晶體及發光元件。作為發光元件可以採用從與該基板相反一側的表面取出發光的頂部發射結構；從基板一側的表面取出發光的底部發射結構；以及從兩個表面取出發光的雙面發射結構。 In order to extract light, at least one of the pair of electrodes of the light-emitting element is made transparent. Transistors and light-emitting elements are formed on the substrate. As the light-emitting element, a top-emitting structure that takes out light from the surface on the opposite side of the substrate; a bottom-emitting structure that takes out light from one side of the substrate; and a double-sided emitting structure that takes out light from both surfaces.

圖18B是作為顯示元件使用發光元件的發光顯示裝置(也稱為“EL顯示裝置”)的一個例子。被用作顯示元件的發光元件4513與設置在顯示部215中的電晶體4010電連接。雖然發光元件4513具有第一電極層4030、發光層 4511及第二電極層4031的疊層結構，但是不侷限於該結構。根據從發光元件4513取出光的方向等，可以適當地改變發光元件4513的結構。 FIG. 18B is an example of a light-emitting display device (also referred to as an "EL display device") using light-emitting elements as display elements. The light-emitting element 4513 used as a display element is electrically connected to the transistor 4010 provided in the display portion 215 . Although the light-emitting element 4513 has a stacked structure of the first electrode layer 4030, the light-emitting layer 4511, and the second electrode layer 4031, it is not limited to this structure. The structure of the light-emitting element 4513 can be appropriately changed depending on the direction in which light is extracted from the light-emitting element 4513 and the like.

分隔壁4510使用有機絕緣材料或無機絕緣材料形成。尤其較佳為使用感光樹脂材料，在第一電極層4030上形成開口部，並且將該開口部的側面形成為具有連續曲率的傾斜面。 The partition wall 4510 is formed using an organic insulating material or an inorganic insulating material. It is particularly preferable to use a photosensitive resin material to form an opening on the first electrode layer 4030 and to form the side surface of the opening into an inclined surface with continuous curvature.

發光層4511可以使用一個層構成，也可以使用多個層的疊層構成。 The light-emitting layer 4511 may be composed of a single layer or a stack of multiple layers.

發光元件4513的發光顏色可以根據構成發光層4511的材料為白色、紅色、綠色、藍色、青色、洋紅色或黃色等。 The light-emitting color of the light-emitting element 4513 can be white, red, green, blue, cyan, magenta, yellow, etc. according to the material constituting the light-emitting layer 4511.

作為實現彩色顯示的方法，有如下方法：組合發光顏色為白色的發光元件4513和彩色層的方法；以及在每個像素設置發光顏色不同的發光元件4513的方法。前者的方法的生產率比後者的方法高。另一方面，在後者的方法中，需要根據每個像素形成發光層4511，所以其生產率比前者的方法低。但是，在後者的方法中，可以得到其色純度比前者的方法高的發光顏色。藉由在後者的方法中使發光元件4513具有微腔結構，可以進一步提高色純度。 As a method of realizing color display, there are the following methods: a method of combining a light-emitting element 4513 with a white light-emitting color and a color layer; and a method of providing a light-emitting element 4513 with a different light-emitting color for each pixel. The former method is more productive than the latter method. On the other hand, in the latter method, the light-emitting layer 4511 needs to be formed for each pixel, so the productivity is lower than that in the former method. However, in the latter method, a luminescent color having higher color purity than in the former method can be obtained. In the latter method, the color purity can be further improved by providing the light-emitting element 4513 with a microcavity structure.

發光層4511也可以包含量子點等無機化合物。例如，藉由將量子點用於發光層，也可以將其用作發光材料。 The light-emitting layer 4511 may contain inorganic compounds such as quantum dots. For example, by using quantum dots for the light-emitting layer, they can also be used as the light-emitting material.

為了防止氧、氫、水分、二氧化碳等侵入發光元件4513，也可以在第二電極層4031及分隔壁4510上形成保護層。作為保護層，可以形成氮化矽、氮氧化矽、氧化鋁、氮化鋁、氧氮化鋁、氮氧化鋁、DLC(Diamond Like Carbon：類金剛石碳)等。此外，在由第一基板4001、第二基板4006以及密封劑4005密封的空間中設置有填充劑4514並被密封。如此，為了不暴露於外部氣 體，較佳為使用氣密性高且脫氣少的保護薄膜(黏合薄膜、紫外線硬化性樹脂薄膜等)、覆蓋材料進行封裝(封入)。 In order to prevent oxygen, hydrogen, moisture, carbon dioxide, etc. from intruding into the light-emitting element 4513, a protective layer may also be formed on the second electrode layer 4031 and the partition wall 4510. As the protective layer, silicon nitride, silicon oxynitride, aluminum oxide, aluminum nitride, aluminum oxynitride, aluminum oxynitride, DLC (Diamond Like Carbon), etc. can be formed. In addition, a filler 4514 is provided and sealed in the space sealed by the first substrate 4001, the second substrate 4006, and the sealant 4005. In order to prevent exposure to external air, it is preferable to encapsulate (encapsulate) using a protective film (adhesive film, ultraviolet curable resin film, etc.) and covering material that has high airtightness and little outgassing.

作為填充劑4514，除了氮或氬等惰性氣體以外，也可以使用紫外線硬化性樹脂或熱固性樹脂，例如可以使用PVC(聚氯乙烯)、丙烯酸類樹脂、聚醯亞胺、環氧類樹脂、矽酮類樹脂、PVB(聚乙烯醇縮丁醛)或EVA(乙烯-醋酸乙烯酯)等。填充劑4514也可以包含乾燥劑。 As the filler 4514, in addition to inert gases such as nitrogen or argon, ultraviolet curable resin or thermosetting resin can also be used. For example, PVC (polyvinyl chloride), acrylic resin, polyimide, epoxy resin, silicon can be used Ketone resin, PVB (polyvinyl butyral) or EVA (ethylene vinyl acetate), etc. Filler 4514 may also contain a desiccant.

作為密封劑4005，可以使用玻璃粉等玻璃材料或者樹脂材料，如兩液混合型樹脂等在常溫下固化的固化樹脂、光硬化性樹脂及熱固性樹脂等。密封劑4005也可以包含乾燥劑。 As the sealant 4005, a glass material such as glass powder or a resin material such as a two-liquid mixed resin that is cured at room temperature, a photocurable resin, a thermosetting resin, etc. can be used. Sealant 4005 may also contain a desiccant.

另外，根據需要，也可以在發光元件的光射出面上適當地設置諸如偏光板或者圓偏光板(包括橢圓偏光板)、相位差板(λ/4板、λ/2板)、濾色片等的光學薄膜。此外，也可以在偏光板或者圓偏光板上設置抗反射膜。例如，可以進行抗眩光處理，該處理是藉由利用表面的凹凸擴散反射光來降低反射眩光的處理。 In addition, as needed, a polarizing plate or a circular polarizing plate (including an elliptical polarizing plate), a phase difference plate (λ/4 plate, λ/2 plate), or a color filter can be appropriately provided on the light exit surface of the light-emitting element. optical films. In addition, an anti-reflection film can also be provided on the polarizing plate or circularly polarizing plate. For example, anti-glare treatment may be performed, which is a treatment that reduces reflected glare by diffusing reflected light using the unevenness of the surface.

藉由使發光元件具有微腔結構，能夠提取色純度高的光。另外，藉由組合微腔結構和濾色片，可以防止反射眩光，而可以提高影像的可見度。 By providing the light-emitting element with a microcavity structure, light with high color purity can be extracted. In addition, by combining the microcavity structure and the color filter, reflected glare can be prevented and the visibility of the image can be improved.

關於對顯示元件施加電壓的第一電極層及第二電極層(也稱為像素電極層、共用電極層、相對電極層等)，根據取出光的方向、設置電極層的地方以及電極層的圖案結構而選擇其透光性、反射性，即可。 Regarding the first electrode layer and the second electrode layer (also called pixel electrode layer, common electrode layer, counter electrode layer, etc.) that apply voltage to the display element, the direction in which the light is extracted, the location where the electrode layer is provided, and the pattern of the electrode layer Just select its transmittance and reflectivity according to the structure.

作為第一電極層4030及第二電極層4031，可以使用包含氧化鎢的氧化銦、包含氧化鎢的銦鋅氧化物、包含氧化鈦的氧化銦、銦錫氧化物、包含 氧化鈦的銦錫氧化物、銦鋅氧化物、添加有氧化矽的銦錫氧化物等具有透光性的導電材料。 As the first electrode layer 4030 and the second electrode layer 4031, indium oxide including tungsten oxide, indium zinc oxide including tungsten oxide, indium oxide including titanium oxide, indium tin oxide, and indium tin oxide including titanium oxide can be used. Materials, indium zinc oxide, indium tin oxide added with silicon oxide and other light-transmitting conductive materials.

此外，第一電極層4030及第二電極層4031可以使用鎢(W)、鉬(Mo)、鋯(Zr)、鉿(Hf)、釩(V)、鈮(Nb)、鉭(Ta)、鉻(Cr)、鈷(Co)、鎳(Ni)、鈦(Ti)、鉑(Pt)、鋁(Al)、銅(Cu)、銀(Ag)等金屬、或者其合金或其氮化物中的一種以上形成。 In addition, the first electrode layer 4030 and the second electrode layer 4031 may use tungsten (W), molybdenum (Mo), zirconium (Zr), hafnium (Hf), vanadium (V), niobium (Nb), tantalum (Ta), In metals such as chromium (Cr), cobalt (Co), nickel (Ni), titanium (Ti), platinum (Pt), aluminum (Al), copper (Cu), silver (Ag), or their alloys or their nitrides of more than one form.

此外，第一電極層4030及第二電極層4031可以使用包含導電高分子(也稱為導電聚合體)的導電組成物形成。作為導電高分子，可以使用所謂的π電子共軛導電高分子。例如，可以舉出聚苯胺或其衍生物、聚吡咯或其衍生物、聚噻吩或其衍生物、或者由苯胺、吡咯及噻吩中的兩種以上構成的共聚物或其衍生物等。 In addition, the first electrode layer 4030 and the second electrode layer 4031 may be formed using a conductive composition including a conductive polymer (also called a conductive polymer). As the conductive polymer, a so-called π electron conjugated conductive polymer can be used. Examples include polyaniline or its derivatives, polypyrrole or its derivatives, polythiophene or its derivatives, or copolymers composed of two or more of aniline, pyrrole and thiophene or their derivatives.

此外，由於電晶體容易因靜電等而損壞，所以較佳為設置用來保護驅動電路的保護電路。保護電路較佳為使用非線性元件構成。 In addition, since the transistor is easily damaged by static electricity, etc., it is preferable to provide a protection circuit to protect the drive circuit. The protection circuit is preferably constructed using non-linear components.

本實施方式可以與其他實施方式等所記載的結構適當地組合而實施。 This embodiment can be implemented in appropriate combination with the structures described in other embodiments and the like.

實施方式3 Embodiment 3

在本實施方式中，參照圖式說明可以代替上述實施方式所示的各電晶體而使用的電晶體的一個例子。 In this embodiment, an example of a transistor that can be used instead of each transistor shown in the above embodiment will be described with reference to the drawings.

本發明的一個實施方式的顯示裝置可以使用底閘極型電晶體或頂閘極型電晶體等各種形態的電晶體來製造。因此，可以根據習知的生產線容易置換所使用的半導體層材料或電晶體結構。 A display device according to an embodiment of the present invention can be manufactured using various forms of transistors such as bottom gate transistors or top gate transistors. Therefore, the used semiconductor layer materials or transistor structures can be easily replaced according to conventional production lines.

[底閘極型電晶體1 [Bottom gate type transistor 1

圖19A1示出底閘極型電晶體之一的通道保護型電晶體810的通道長度方向的剖面圖。在圖19A1中，電晶體810形成在基板771上。另外，電晶體810在基板771上隔著絕緣層772包括電極746。另外，在電極746上隔著絕緣層726包括半導體層742。電極746可以被用作閘極電極。絕緣層726可以被用作閘極絕緣層。 FIG. 19A1 shows a cross-sectional view in the channel length direction of a channel protection transistor 810, which is one of the bottom gate transistors. In FIG. 19A1 , a transistor 810 is formed on a substrate 771 . In addition, the transistor 810 includes an electrode 746 on the substrate 771 with an insulating layer 772 interposed therebetween. In addition, a semiconductor layer 742 is provided on the electrode 746 with an insulating layer 726 interposed therebetween. Electrode 746 may be used as a gate electrode. Insulating layer 726 may be used as a gate insulating layer.

另外，在半導體層742的通道形成區域上包括絕緣層741。此外，在絕緣層726上以與半導體層742的一部分接觸的方式包括電極744a及電極744b。電極744a可以被用作源極電極和汲極電極中的一個。電極744b可以被用作源極電極和汲極電極中的另一個。電極744a的一部分及電極744b的一部分形成在絕緣層741上。 In addition, an insulating layer 741 is included on the channel formation region of the semiconductor layer 742 . In addition, electrodes 744a and 744b are provided on the insulating layer 726 so as to be in contact with a part of the semiconductor layer 742. Electrode 744a may be used as one of a source electrode and a drain electrode. Electrode 744b may be used as the other of the source electrode and the drain electrode. A part of the electrode 744a and a part of the electrode 744b are formed on the insulating layer 741.

絕緣層741可以被用作通道保護層。藉由在通道形成區域上設置絕緣層741，可以防止在形成電極744a及電極744b時半導體層742露出。由此，可以防止在形成電極744a及電極744b時半導體層742的通道形成區域被蝕刻。根據本發明的一個實施方式，可以實現電特性良好的電晶體。 The insulating layer 741 may be used as a channel protection layer. By providing the insulating layer 741 on the channel formation region, the semiconductor layer 742 can be prevented from being exposed when forming the electrode 744a and the electrode 744b. This can prevent the channel formation region of the semiconductor layer 742 from being etched when forming the electrode 744a and the electrode 744b. According to one embodiment of the present invention, a transistor with excellent electrical characteristics can be realized.

另外，電晶體810在電極744a、電極744b及絕緣層741上包括絕緣層728，在絕緣層728上包括絕緣層729。 In addition, the transistor 810 includes an insulating layer 728 on the electrode 744a, the electrode 744b, and the insulating layer 741, and includes an insulating layer 729 on the insulating layer 728.

當將氧化物半導體用於半導體層742時，較佳為將能夠從半導體層742的一部分中奪取氧而產生氧缺陷的材料用於電極744a及電極744b的至少與半導體層742接觸的部分。半導體層742中的產生氧缺陷的區域的載子濃度增加，該區域n型化而成為n型區域(n+層)。因此，該區域能夠被用作源極區域或汲極區域。當將氧化物半導體用於半導體層742時，作為能夠從半導體層742中奪取氧而產生氧缺陷的材料的一個例子，可以舉出鎢、鈦等。 When an oxide semiconductor is used for the semiconductor layer 742, it is preferable to use a material capable of extracting oxygen from a part of the semiconductor layer 742 to generate oxygen vacancies for at least the portions of the electrode 744a and the electrode 744b that are in contact with the semiconductor layer 742. The carrier concentration in the region where oxygen defects occur in the semiconductor layer 742 increases, and this region becomes n-type and becomes an n-type region (n + layer). Therefore, this region can be used as a source region or a drain region. When an oxide semiconductor is used for the semiconductor layer 742, examples of materials that can extract oxygen from the semiconductor layer 742 and generate oxygen defects include tungsten, titanium, and the like.

藉由在半導體層742中形成源極區域及汲極區域，可以降低電極744a及電極744b與半導體層742的接觸電阻。因此，可以使場效移動率及臨界電壓等電晶體的電特性良好。 By forming the source region and the drain region in the semiconductor layer 742, the contact resistance between the electrodes 744a and 744b and the semiconductor layer 742 can be reduced. Therefore, the electrical characteristics of the transistor such as field mobility and critical voltage can be improved.

當將矽等半導體用於半導體層742時，較佳為在半導體層742與電極744a之間及半導體層742與電極744b之間設置被用作n型半導體或p型半導體的層。用作n型半導體或p型半導體的層可以被用作電晶體的源極區域或汲極區域。 When a semiconductor such as silicon is used for the semiconductor layer 742, it is preferable to provide a layer serving as an n-type semiconductor or a p-type semiconductor between the semiconductor layer 742 and the electrode 744a and between the semiconductor layer 742 and the electrode 744b. A layer functioning as an n-type semiconductor or a p-type semiconductor may be used as a source region or a drain region of a transistor.

絕緣層729較佳為使用具有防止雜質從外部擴散到電晶體中或者降低雜質的擴散的功能的材料形成。此外，根據需要也可以省略絕緣層729。 The insulating layer 729 is preferably formed using a material that has the function of preventing impurities from diffusing into the transistor from the outside or reducing the diffusion of impurities. In addition, the insulating layer 729 may be omitted as needed.

圖19A2所示的電晶體811的與電晶體810不同之處在於：在絕緣層729上包括可用作背閘極電極的電極723。電極723可以使用與電極746同樣的材料及方法形成。 The transistor 811 shown in FIG. 19A2 is different from the transistor 810 in that the insulating layer 729 includes an electrode 723 that can be used as a back gate electrode. The electrode 723 can be formed using the same materials and methods as the electrode 746 .

一般而言，背閘極電極使用導電層來形成，並以半導體層的通道形成區域被閘極電極與背閘極電極夾持的方式設置。因此，背閘極電極可以具有與閘極電極同樣的功能。背閘極電極的電位可以與閘極電極的電位相等，也可以為接地電位(GND電位)或任意電位。另外，藉由不跟閘極電極聯動而獨立地改變背閘極電極的電位，可以改變電晶體的臨界電壓。 Generally speaking, the back gate electrode is formed using a conductive layer, and is disposed in such a manner that the channel formation region of the semiconductor layer is sandwiched between the gate electrode and the back gate electrode. Therefore, the back gate electrode can have the same function as the gate electrode. The potential of the back gate electrode can be equal to the potential of the gate electrode, or it can be the ground potential (GND potential) or any potential. In addition, by changing the potential of the back gate electrode independently without linking with the gate electrode, the critical voltage of the transistor can be changed.

另外，電極746及電極723都可以被用作閘極電極。因此，絕緣層726、絕緣層728及絕緣層729都可以被用作閘極絕緣層。另外，也可以將電極723設置在絕緣層728與絕緣層729之間。 In addition, both electrode 746 and electrode 723 can be used as gate electrodes. Therefore, the insulating layer 726, the insulating layer 728 and the insulating layer 729 can all be used as gate insulating layers. In addition, the electrode 723 may be provided between the insulating layer 728 and the insulating layer 729.

注意，當將電極746和電極723中的一個稱為“閘極電極”時，將另一個稱為“背閘極電極”。例如，在電晶體811中，當將電極723稱為“閘極 電極”時，將電極746稱為“背閘極電極”。另外，當將電極723用作“閘極電極”時，電晶體811是頂閘極型電晶體之一種。此外，有時將電極746和電極723中的一個稱為“第一閘極電極”，有時將另一個稱為“第二閘極電極”。 Note that when one of the electrode 746 and the electrode 723 is called a "gate electrode", the other is called a "back gate electrode." For example, in the transistor 811, when the electrode 723 is called a "gate electrode", the electrode 746 is called a "back gate electrode." In addition, when the electrode 723 is used as a "gate electrode", the transistor 811 is one of the top gate type transistors. In addition, one of the electrode 746 and the electrode 723 may be called a "first gate electrode", and the other may be called a "second gate electrode".

藉由隔著半導體層742設置電極746及電極723並將電極746及電極723的電位設定為相同，半導體層742中的載子流過的區域在膜厚度方向上更加擴大，所以載子的移動量增加。其結果是，電晶體811的通態電流增大，並且場效移動率也增高。 By providing the electrode 746 and the electrode 723 across the semiconductor layer 742 and setting the potentials of the electrode 746 and the electrode 723 to be the same, the area through which carriers flow in the semiconductor layer 742 is further expanded in the film thickness direction, so the carriers move The amount increases. As a result, the on-state current of the transistor 811 increases, and the field effect mobility also increases.

因此，電晶體811是相對於佔有面積具有較大的通態電流的電晶體。也就是說，可以相對於所要求的通態電流縮小電晶體811的佔有面積。根據本發明的一個實施方式，可以縮小電晶體的佔有面積。因此，根據本發明的一個實施方式，可以實現積體度高的半導體裝置。 Therefore, the transistor 811 has a large on-state current relative to the occupied area. That is, the occupied area of the transistor 811 can be reduced relative to the required on-state current. According to one embodiment of the present invention, the area occupied by a transistor can be reduced. Therefore, according to one embodiment of the present invention, a highly integrated semiconductor device can be realized.

另外，由於閘極電極及背閘極電極使用導電層形成，因此具有防止在電晶體的外部產生的電場影響到形成通道的半導體層的功能(尤其是對靜電等的電場遮蔽功能)。另外，當將背閘極電極形成得比半導體層大以使用背閘極電極覆蓋半導體層時，能夠提高電場遮蔽功能。 In addition, since the gate electrode and the back gate electrode are formed using a conductive layer, they have the function of preventing the electric field generated outside the transistor from affecting the semiconductor layer forming the channel (especially the electric field shielding function against static electricity and the like). In addition, when the back gate electrode is formed larger than the semiconductor layer to cover the semiconductor layer with the back gate electrode, the electric field shielding function can be improved.

另外，藉由使用具有遮光性的導電膜形成背閘極電極，能夠防止光從背閘極電極一側入射到半導體層。由此，能夠防止半導體層的光劣化，並防止電晶體的臨界電壓漂移等電特性劣化。 In addition, by forming the back gate electrode using a light-shielding conductive film, it is possible to prevent light from being incident on the semiconductor layer from the back gate electrode side. This prevents photodegradation of the semiconductor layer and prevents deterioration of electrical characteristics such as threshold voltage drift of the transistor.

根據本發明的一個實施方式，可以實現可靠性良好的電晶體。另外，可以實現可靠性良好的半導體裝置。 According to one embodiment of the present invention, a highly reliable transistor can be realized. In addition, a highly reliable semiconductor device can be realized.

圖19B1示出與圖19A1不同的結構的通道保護型電晶體820的通道長度方向的剖面圖。電晶體820具有與電晶體810大致相同的結構，而電晶體820 的與電晶體810不同之處在於：絕緣層741覆蓋半導體層742的端部。在選擇性地去除具有與半導體層742重疊的區域的絕緣層741的一部分而形成的開口部中，半導體層742與電極744a電連接。另外，在選擇性地去除具有與半導體層742重疊的區域的絕緣層741的一部分而形成的其他開口部中，半導體層742與電極744b電連接。絕緣層741的與通道形成區域重疊的區域可以被用作通道保護層。 FIG. 19B1 shows a cross-sectional view in the channel length direction of a channel protection type transistor 820 having a different structure from that of FIG. 19A1 . The transistor 820 has substantially the same structure as the transistor 810 , and the difference between the transistor 820 and the transistor 810 is that the insulating layer 741 covers the end of the semiconductor layer 742 . In an opening formed by selectively removing a part of the insulating layer 741 having a region overlapping the semiconductor layer 742, the semiconductor layer 742 and the electrode 744a are electrically connected. In addition, in another opening formed by selectively removing a part of the insulating layer 741 having a region overlapping the semiconductor layer 742, the semiconductor layer 742 and the electrode 744b are electrically connected. A region of the insulating layer 741 overlapping the channel formation region may be used as a channel protective layer.

圖19B2所示的電晶體821的與電晶體820不同之處在於：在絕緣層729上包括可以被用作背閘極電極的電極723。 The transistor 821 shown in FIG. 19B2 is different from the transistor 820 in that an electrode 723 that can be used as a back gate electrode is included on the insulating layer 729 .

藉由設置絕緣層741，可以防止在形成電極744a及電極744b時產生的半導體層742的露出。因此，可以防止在形成電極744a及電極744b時半導體層742被薄膜化。 By providing the insulating layer 741, it is possible to prevent the semiconductor layer 742 from being exposed when forming the electrode 744a and the electrode 744b. Therefore, it is possible to prevent the semiconductor layer 742 from being thinned when forming the electrode 744a and the electrode 744b.

另外，與電晶體810及電晶體811相比，電晶體820及電晶體821的電極744a與電極746之間的距離及電極744b與電極746之間的距離更長。因此，可以減少產生在電極744a與電極746之間的寄生電容。此外，可以減少產生在電極744b與電極746之間的寄生電容。根據本發明的一個實施方式，可以提供一種電特性良好的電晶體。 In addition, compared with the transistor 810 and the transistor 811, the distance between the electrode 744a and the electrode 746 of the transistor 820 and the transistor 821 and the distance between the electrode 744b and the electrode 746 are longer. Therefore, the parasitic capacitance generated between the electrode 744a and the electrode 746 can be reduced. In addition, parasitic capacitance generated between the electrode 744b and the electrode 746 can be reduced. According to one embodiment of the present invention, a transistor with excellent electrical characteristics can be provided.

圖19C1示出作為底閘極型電晶體之一的通道蝕刻型電晶體825的通道長度方向的剖面圖。在電晶體825中，不設置絕緣層741形成電極744a及電極744b。因此，在形成電極744a及電極744b時露出的半導體層742的一部分有時被蝕刻。另一方面，由於不設置絕緣層741，可以提高電晶體的生產率。 19C1 shows a cross-sectional view in the channel length direction of a channel etching type transistor 825 which is one of the bottom gate type transistors. In the transistor 825, the insulating layer 741 is not provided to form the electrode 744a and the electrode 744b. Therefore, a part of the semiconductor layer 742 exposed when forming the electrode 744a and the electrode 744b may be etched. On the other hand, since the insulating layer 741 is not provided, the productivity of the transistor can be improved.

圖19C2所示的電晶體826的與電晶體825的不同之處在於：在絕緣層729上具有可以用作背閘極電極的電極723。 The transistor 826 shown in FIG. 19C2 is different from the transistor 825 in that it has an electrode 723 on the insulating layer 729 that can be used as a back gate electrode.

圖20A1至圖20C2示出電晶體810、電晶體811、電晶體820、電晶體821、電晶體825及電晶體826的通道寬度方向的剖面圖。 20A1 to 20C2 show cross-sectional views of the transistor 810, the transistor 811, the transistor 820, the transistor 821, the transistor 825, and the transistor 826 in the channel width direction.

在圖20B2和圖20C2所示的結構中，閘極電極和背閘極電極彼此連接，由此閘極電極和背閘極電極的電位相同。此外，半導體層742被夾在閘極電極和背閘極電極之間。 In the structures shown in FIG. 20B2 and FIG. 20C2 , the gate electrode and the back gate electrode are connected to each other, whereby the potentials of the gate electrode and the back gate electrode are the same. Furthermore, the semiconductor layer 742 is sandwiched between the gate electrode and the back gate electrode.

在通道寬度方向上，閘極電極和背閘極電極的長度比半導體層742大，並且半導體層742的通道寬度方向上的整體夾著絕緣層726、絕緣層741、絕緣層728及絕緣層729被閘極電極及背閘極電極覆蓋。 In the channel width direction, the gate electrode and the back gate electrode are longer than the semiconductor layer 742 , and the entire semiconductor layer 742 in the channel width direction is sandwiched between the insulating layer 726 , the insulating layer 741 , the insulating layer 728 and the insulating layer 729 Covered by gate electrode and back gate electrode.

藉由採用該結構，可以由閘極電極及背閘極電極的電場電圍繞包括在電晶體中的半導體層742。 By adopting this structure, the semiconductor layer 742 included in the transistor can be electrically surrounded by the electric fields of the gate electrode and the back gate electrode.

可以將如電晶體811、電晶體821及電晶體826那樣的利用閘極電極及背閘極電極的電場電圍繞形成通道形成區域的半導體層742的電晶體的裝置結構稱為Surrounded channel(S-channel：圍繞通道)結構。 A device structure in which a transistor such as the transistor 811, the transistor 821, and the transistor 826 uses the electric field of the gate electrode and the back gate electrode to electrically surround the semiconductor layer 742 forming the channel formation region can be called a Surrounded channel (S- channel: around the channel) structure.

藉由採用S-channel結構，可以利用閘極電極和背閘極電極中的一個或兩個對半導體層742有效地施加用來引起通道形成的電場。由此，電晶體的電流驅動能力得到提高，從而可以得到較高的通態電流特性。此外，由於可以增加通態電流，所以可以使電晶體微型化。此外，藉由採用S-channel結構，可以提高電晶體的機械強度。 By adopting the S-channel structure, one or both of the gate electrode and the back gate electrode can be used to effectively apply an electric field to the semiconductor layer 742 to cause channel formation. As a result, the current driving capability of the transistor is improved, so that higher on-state current characteristics can be obtained. In addition, since the on-state current can be increased, the transistor can be miniaturized. In addition, by adopting an S-channel structure, the mechanical strength of the transistor can be improved.

[頂閘極型電晶體] [Top gate transistor]

圖21A1所例示的電晶體842是頂閘極型電晶體之一。在電晶體842中，在形成絕緣層729之後，形成電極744a及電極744b。在形成於絕緣層728及絕緣層729中的開口部，電極744a及電極744b與半導體層747電連接。 The transistor 842 illustrated in FIG. 21A1 is one of the top gate type transistors. In the transistor 842, after the insulating layer 729 is formed, the electrode 744a and the electrode 744b are formed. The electrodes 744a and 744b are electrically connected to the semiconductor layer 747 in the openings formed in the insulating layer 728 and the insulating layer 729.

另外，去除不與電極746重疊的絕緣層726的一部分，以電極746及去除後剩下的絕緣層726為遮罩將雜質引入到半導體層742，由此可以在半導體層742中以自對準(self-alignment)的方式形成雜質區域。電晶體842包括絕緣層726超過電極746的端部延伸的區域。半導體層742的藉由絕緣層726被引入雜質的區域的雜質濃度低於不藉由絕緣層726被引入雜質的區域。因此，在半導體層742的不與電極746重疊的區域中形成LDD(Lightly Doped Drain：輕摻雜波極)區域。 In addition, a portion of the insulating layer 726 that does not overlap with the electrode 746 is removed, and impurities are introduced into the semiconductor layer 742 using the electrode 746 and the remaining insulating layer 726 after removal as a mask, thereby enabling self-alignment in the semiconductor layer 742 (self-alignment) to form impurity regions. Transistor 842 includes a region where insulating layer 726 extends beyond the ends of electrode 746 . The impurity concentration of the semiconductor layer 742 in the region where impurities are introduced through the insulating layer 726 is lower than the region where impurities are not introduced through the insulating layer 726 . Therefore, an LDD (Lightly Doped Drain) region is formed in a region of the semiconductor layer 742 that does not overlap the electrode 746 .

圖21A2所示的電晶體843的與電晶體842不同之處是電晶體843包括電極723。電晶體843包括形成在基板771上的電極723。電極723隔著絕緣層772與半導體層742重疊的區域。電極723可以被用作背閘極電極。 The transistor 843 shown in FIG. 21A2 is different from the transistor 842 in that the transistor 843 includes an electrode 723 . Transistor 843 includes electrode 723 formed on substrate 771 . The electrode 723 interposes a region where the insulating layer 772 and the semiconductor layer 742 overlap. Electrode 723 may be used as a back gate electrode.

另外，如圖21B1所示的電晶體844及圖21B2所示的電晶體845那樣，也可以完全去除不與電極746重疊的區域的絕緣層726。另外，如圖21C1所示的電晶體846及圖21C2所示的電晶體847那樣，也可以不去除絕緣層726。 In addition, like the transistor 844 shown in FIG. 21B1 and the transistor 845 shown in FIG. 21B2 , the insulating layer 726 in the region that does not overlap the electrode 746 may be completely removed. In addition, like the transistor 846 shown in FIG. 21C1 and the transistor 847 shown in FIG. 21C2 , the insulating layer 726 does not need to be removed.

在電晶體842至電晶體847中，也可以在形成電極746之後以電極746為遮罩而將雜質引入到半導體層742，由此在半導體層742中自對準地形成雜質區域。根據本發明的一個實施方式，可以實現電特性良好的電晶體。另外，根據本發明的一個實施方式，可以實現積體度高的半導體裝置。 In the transistors 842 to 847 , after the electrode 746 is formed, impurities may be introduced into the semiconductor layer 742 using the electrode 746 as a mask, thereby forming an impurity region in the semiconductor layer 742 in a self-aligned manner. According to one embodiment of the present invention, a transistor with excellent electrical characteristics can be realized. In addition, according to one embodiment of the present invention, a highly integrated semiconductor device can be realized.

圖22A1至圖22C2示出電晶體842至電晶體847的通道寬度方向的剖面圖。 22A1 to 22C2 show cross-sectional views of the transistors 842 to 847 in the channel width direction.

電晶體843、電晶體845及電晶體847具有上述S-channel結構。但是，不侷限於此，電晶體843、電晶體845及電晶體847也可以不具有S-channel結構。 The transistor 843, the transistor 845 and the transistor 847 have the above-mentioned S-channel structure. However, the present invention is not limited to this, and the transistor 843, the transistor 845, and the transistor 847 may not have an S-channel structure.

本實施方式可以與其他實施方式等中記載的結構適當地組合而實施。 This embodiment can be implemented in appropriate combination with the structures described in other embodiments and the like.

實施方式4 Embodiment 4

在本實施方式中，說明OS電晶體的詳細的結構例子。 In this embodiment, a detailed structural example of an OS transistor is explained.

作為OS電晶體中的半導體層，例如可以採用包含銦、鋅及M(鋁、鈦、鎵、鍺、釔、鋯、鑭、鈰、錫、釹或鉿等金屬)的以“In-M-Zn類氧化物”表示的膜。 As the semiconductor layer in the OS transistor, for example, "In-M- Film represented by "Zn-based oxide".

當構成半導體層的氧化物半導體為In-M-Zn類氧化物時，較佳為用來形成In-M-Zn氧化物膜的濺射靶材的金屬元素的原子數比滿足In

Figure 107143506-A0202-12-0068-27
M及Zn
Figure 107143506-A0202-12-0068-28
M。這種濺射靶材的金屬元素的原子數比較佳為In：M：Zn=1：1：1、In：M：Zn=1：1：1.2、In：M：Zn=3：1：2、In：M：Zn=4：2：3、In：M：Zn=4：2：4.1、In：M：Zn=5：1：6、In：M：Zn=5：1：7、In：M：Zn=5：1：8等。注意，所形成的半導體層的原子數比分別有可能在上述濺射靶材中的金屬元素的原子數比的±40%的範圍內變動。 When the oxide semiconductor constituting the semiconductor layer is an In-M-Zn-based oxide, it is preferable that the atomic number ratio of the metal elements in the sputtering target used to form the In-M-Zn oxide film satisfies In
Figure 107143506-A0202-12-0068-27
M and Zn
Figure 107143506-A0202-12-0068-28
M. The preferred atomic numbers of the metal elements of this sputtering target are In:M:Zn=1:1:1, In:M:Zn=1:1:1.2, In:M:Zn=3:1:2 , In: M: Zn = 4: 2: 3, In: M: Zn = 4: 2: 4.1, In: M: Zn = 5: 1: 6, In: M: Zn = 5: 1: 7, In :M:Zn=5:1:8, etc. Note that the atomic number ratio of the formed semiconductor layer may vary within a range of ±40% of the atomic number ratio of the metal element in the sputtering target.

作為半導體層，可以使用載子密度低的氧化物半導體。例如，作為半導體層可以使用載子密度為1×1017/cm3以下，較佳為1×1015/cm3以下，更佳為1×1013/cm3以下，進一步較佳為1×1011/cm3以下，更進一步較佳為小於1×1010/cm3,1×10-9/cm3以上的氧化物半導體。將這樣的氧化物半導體稱為高純度本質或實質上高純度本質的氧化物半導體。該氧化物半導體的缺陷能階密度低，因此可以說是具有穩定的特性的氧化物半導體。 As the semiconductor layer, an oxide semiconductor with low carrier density can be used. For example, a semiconductor layer having a carrier density of 1×10 17 /cm 3 or less, preferably 1×10 15 /cm 3 or less, more preferably 1×10 13 /cm 3 or less, still more preferably 1× 10 11 /cm 3 or less, more preferably less than 1×10 10 /cm 3 , 1×10 -9 /cm 3 or more of the oxide semiconductor. Such an oxide semiconductor is called a high-purity intrinsic or substantially high-purity intrinsic oxide semiconductor. This oxide semiconductor has a low defect level density and therefore can be said to have stable characteristics.

注意，本發明不侷限於上述記載，可以根據所需的電晶體的半導體特性及電特性(場效移動率、臨界電壓等)來使用具有適當的組成的材料。 另外，較佳為適當地設定半導體層的載子密度、雜質濃度、缺陷密度、金屬元素與氧的原子數比、原子間距離、密度等，以得到所需的電晶體的半導體特性。 Note that the present invention is not limited to the above description, and a material having an appropriate composition may be used according to the required semiconductor characteristics and electrical characteristics (field effect mobility, critical voltage, etc.) of the transistor. In addition, it is preferable to appropriately set the carrier density, impurity concentration, defect density, atomic ratio of metal elements and oxygen, inter-atomic distance, density, etc. of the semiconductor layer to obtain the desired semiconductor characteristics of the transistor.

當構成半導體層的氧化物半導體包含第14族元素之一的矽或碳時，氧缺陷增加，會使該半導體層變為n型。因此，將半導體層中的矽或碳的濃度(藉由二次離子質譜分析法測得的濃度)設定為2×1018atoms/cm3以下，較佳為2×1017atoms/cm3以下。 When the oxide semiconductor constituting the semiconductor layer contains silicon or carbon, which is one of the Group 14 elements, oxygen defects increase, causing the semiconductor layer to become n-type. Therefore, the concentration of silicon or carbon in the semiconductor layer (concentration measured by secondary ion mass spectrometry) is set to 2×10 18 atoms/cm 3 or less, preferably 2×10 17 atoms/cm 3 or less .

另外，有時當鹼金屬及鹼土金屬與氧化物半導體鍵合時生成載子，而使電晶體的關態電流增大。因此，將半導體層的鹼金屬或鹼土金屬的濃度(藉由二次離子質譜分析法測得的濃度)設定為1×1018atoms/cm3以下，較佳為2×1016atoms/cm3以下。 In addition, when alkali metals and alkaline earth metals are bonded to oxide semiconductors, carriers are sometimes generated, which increases the off-state current of the transistor. Therefore, the concentration of the alkali metal or alkaline earth metal in the semiconductor layer (concentration measured by secondary ion mass spectrometry) is set to 1×10 18 atoms/cm 3 or less, preferably 2×10 16 atoms/cm 3 the following.

另外，當構成半導體層的氧化物半導體含有氮時生成作為載子的電子，載子密度增加而容易n型化。其結果是，使用含有氮的氧化物半導體的電晶體容易變為常開特性。因此，半導體層的氮濃度(藉由二次離子質譜分析法測得的濃度)較佳為5×1018atoms/cm3以下。 In addition, when the oxide semiconductor constituting the semiconductor layer contains nitrogen, electrons as carriers are generated, and the carrier density increases, making it easy to become n-type. As a result, a transistor using a nitrogen-containing oxide semiconductor tends to have normally-on characteristics. Therefore, the nitrogen concentration (concentration measured by secondary ion mass spectrometry) of the semiconductor layer is preferably 5×10 18 atoms/cm 3 or less.

另外，半導體層例如也可以具有非單晶結構。非單晶結構例子如包括具有c軸配向的結晶的CAAC-OS(C-Axis Aligned Crystalline Oxide Semiconductor)、多晶結構、微晶結構或非晶結構。在非單晶結構中，非晶結構的缺陷態密度最高，而CAAC-OS的缺陷態密度最低。 In addition, the semiconductor layer may have a non-single crystal structure, for example. Examples of non-single crystal structures include CAAC-OS (C-Axis Aligned Crystalline Oxide Semiconductor) with c-axis aligned crystals, polycrystalline structures, microcrystalline structures, or amorphous structures. Among non-single crystal structures, the amorphous structure has the highest defect state density, while CAAC-OS has the lowest defect state density.

非晶結構的氧化物半導體膜例如具有無秩序的原子排列且不具有結晶成分。或者，非晶結構的氧化物膜例如是完全的非晶結構且不具有結晶部。 An oxide semiconductor film with an amorphous structure has, for example, a disordered atomic arrangement and no crystalline component. Alternatively, the oxide film with an amorphous structure has, for example, a completely amorphous structure and no crystal parts.

此外，半導體層也可以為具有非晶結構的區域、微晶結構的區域、多晶結構的區域、CAAC-OS的區域和單晶結構的區域中的兩種以上的混合膜。混合膜有時例如具有包括上述區域中的兩種以上的區域的單層結構或疊層結構。 In addition, the semiconductor layer may be a mixed film having two or more types of an amorphous structure region, a microcrystalline structure region, a polycrystalline structure region, a CAAC-OS region, and a single crystal structure region. The hybrid film may have a single-layer structure or a laminated structure including two or more of the above-mentioned regions.

以下對非單晶半導體層的一個實施方式的CAC(Cloud-Aligned Composite)-OS的構成進行說明。 The structure of CAC (Cloud-Aligned Composite)-OS, which is an embodiment of the non-single crystal semiconductor layer, will be described below.

CAC-OS例如是指包含在氧化物半導體中的元素不均勻地分佈的構成，其中包含不均勻地分佈的元素的材料的尺寸為0.5nm以上且10nm以下，較佳為1nm以上且2nm以下或近似的尺寸。注意，在下面也將在氧化物半導體中一個或多個金屬元素不均勻地分佈且包含該金屬元素的區域以0.5nm以上且10nm以下，較佳為1nm以上且2nm以下或近似的尺寸混合的狀態稱為馬賽克(mosaic)狀或補丁(patch)狀。 For example, CAC-OS refers to a structure in which elements contained in an oxide semiconductor are distributed unevenly, and the size of the material containing the unevenly distributed elements is 0.5 nm or more and 10 nm or less, preferably 1 nm or more and 2 nm or less, or Approximate dimensions. Note that in the following, one or more metal elements are unevenly distributed in the oxide semiconductor and a region containing the metal element is mixed with a size of 0.5 nm or more and 10 nm or less, preferably 1 nm or more and 2 nm or less, or a similar size. The state is called mosaic or patch.

氧化物半導體較佳為至少包含銦。尤其是，較佳為包含銦及鋅。除此之外，也可以還包含選自鋁、鎵、釔、銅、釩、鈹、硼、矽、鈦、鐵、鎳、鍺、鋯、鉬、鑭、鈰、釹、鉿、鉭、鎢和鎂等中的一種或多種。 The oxide semiconductor preferably contains at least indium. In particular, it is preferable to contain indium and zinc. In addition, it may also include aluminum, gallium, yttrium, copper, vanadium, beryllium, boron, silicon, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten and one or more of magnesium, etc.

例如，In-Ga-Zn氧化物中的CAC-OS(在CAC-OS中，尤其可以將In-Ga-Zn氧化物稱為CAC-IGZO)是指材料分成銦氧化物(以下，稱為InOX1(X1為大於0的實數))或銦鋅氧化物(以下，稱為InX2ZnY2OZ2(X2、Y2及Z2為大於0的實數))以及鎵氧化物(以下，稱為GaOX3(X3為大於0的實數))或鎵鋅氧化物(以下，稱為GaX4ZnY4OZ4(X4、Y4及Z4為大於0的實數))等而成為馬賽克狀，且馬賽克狀的InOX1或InX2ZnY2OZ2均勻地分佈在膜中的構成(以下，也稱為雲狀)。 For example, CAC-OS in In-Ga-Zn oxide (in CAC-OS, especially In-Ga-Zn oxide can be called CAC-IGZO) means that the material is divided into indium oxide (hereinafter, referred to as InO X1 (X1 is a real number greater than 0)) or indium zinc oxide (hereinafter, called In X2 Zn Y2 O Z2 (X2, Y2 and Z2 are real numbers greater than 0)) and gallium oxide (hereinafter, called GaO X3 ( X3 is a real number greater than 0 )) or gallium zinc oxide (hereinafter, referred to as Ga Or a structure in which In X2 Zn Y2 O Z2 is uniformly distributed in the film (hereinafter also referred to as cloud-like).

換言之，CAC-OS是具有以GaOX3為主要成分的區域和以InX2ZnY2OZ2或InOX1為主要成分的區域混在一起的構成的複合氧化物半導體。在本說明書中，例如，當第一區域的In與元素M的原子數比大於第二區域的In與元素M的原子數比時，第一區域的In濃度高於第二區域。 In other words, CAC-OS is a composite oxide semiconductor having a structure in which a region containing GaO X3 as a main component and a region containing In X2 Zn Y2 O Z2 or InO X1 as a main component are mixed. In this specification, for example, when the atomic number ratio of In to element M in the first region is greater than the atomic number ratio of In to element M in the second region, the In concentration in the first region is higher than that in the second region.

注意，IGZO是通稱，有時是指包含In、Ga、Zn及O的化合物。作為典型例子，可以舉出以InGaO3(ZnO)m1(m1為自然數)或In(1+x0)Ga(1-x0)O3(ZnO)m0(-1

Figure 107143506-A0202-12-0071-29
x0
Figure 107143506-A0202-12-0071-30
1,m0為任意數)表示的結晶性化合物。 Note that IGZO is a general term and sometimes refers to a compound containing In, Ga, Zn, and O. Typical examples include InGaO 3 (ZnO) m1 (m1 is a natural number) or In (1+x0) Ga (1-x0) O 3 (ZnO) m0 (-1
Figure 107143506-A0202-12-0071-29
x0
Figure 107143506-A0202-12-0071-30
1, m0 is a crystalline compound represented by any number).

上述結晶性化合物具有單晶結構、多晶結構或CAAC結構。CAAC結構是多個IGZO的奈米晶具有c軸配向性且在a-b面上以不配向的方式連接的結晶結構。 The above-mentioned crystalline compound has a single crystal structure, a polycrystalline structure or a CAAC structure. The CAAC structure is a crystal structure in which multiple IGZO nanocrystals have c-axis alignment and are connected in a non-aligned manner on the a-b plane.

另一方面，CAC-OS與氧化物半導體的材料構成有關。CAC-OS是指如下構成：在包含In、Ga、Zn及O的材料構成中，一部分中觀察到以Ga為主要成分的奈米粒子狀區域以及一部分中觀察到以In為主要成分的奈米粒子狀區域分別以馬賽克狀無規律地分散。因此，在CAC-OS中，結晶結構是次要因素。 On the other hand, CAC-OS is related to the material composition of oxide semiconductor. CAC-OS is a material composed of In, Ga, Zn, and O, in which nanoparticle-like regions containing Ga as the main component are observed in part, and nanoparticles containing In as the main component are observed in part. The granular regions are scattered irregularly in a mosaic shape. Therefore, in CAC-OS, crystalline structure is a secondary factor.

CAC-OS不包含組成不同的二種以上的膜的疊層結構。例如，不包含由以In為主要成分的膜與以Ga為主要成分的膜的兩層構成的結構。 CAC-OS does not include a laminated structure of two or more films with different compositions. For example, a structure composed of two layers of a film containing In as a main component and a film containing Ga as a main component is not included.

注意，有時觀察不到以GaOX3為主要成分的區域與以InX2ZnY2OZ2或InOX1為主要成分的區域之間的明確的邊界。 Note that sometimes a clear boundary between a region containing GaO X3 as the main component and a region containing In X2 Zn Y2 O Z2 or InO X1 as the main component is not observed.

在CAC-OS中包含選自鋁、釔、銅、釩、鈹、硼、矽、鈦、鐵、鎳、鍺、鋯、鉬、鑭、鈰、釹、鉿、鉭、鎢和鎂等中的一種或多種以代替鎵的情況下，CAC-OS是指如下構成：一部分中觀察到以該元素為主要成分的奈米 粒子狀區域以及一部分中觀察到以In為主要成分的奈米粒子狀區域以馬賽克狀無規律地分散。 CAC-OS includes aluminum, yttrium, copper, vanadium, beryllium, boron, silicon, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten and magnesium, etc. When one or more elements are substituted for gallium, CAC-OS means a structure in which a nanoparticle-like region containing the element as a main component is observed in a part and a nanoparticle-like region containing In as a main component is observed in a part. Scattered irregularly in a mosaic pattern.

CAC-OS例如可以藉由在對基板不進行意圖性的加熱的條件下利用濺射法來形成。在利用濺射法形成CAC-OS的情況下，作為沉積氣體，可以使用選自惰性氣體(典型為氬)、氧氣體和氮氣體中的一種或多種。另外，成膜時的沉積氣體的總流量中的氧氣體的流量比越低越好，例如，將氧氣體的流量比設定為0%以上且低於30%，較佳為0%以上且10%以下。 CAC-OS can be formed by a sputtering method without intentionally heating the substrate, for example. In the case of forming CAC-OS using a sputtering method, as the deposition gas, one or more selected from an inert gas (typically argon), oxygen gas, and nitrogen gas may be used. In addition, the flow rate ratio of the oxygen gas in the total flow rate of the deposition gas during film formation is as low as possible. For example, the flow rate ratio of the oxygen gas is set to be 0% or more and less than 30%, preferably 0% or more and 10%. %the following.

CAC-OS具有如下特徵：藉由根據X射線繞射(XRD：X-ray diffraction)測定法之一的Out-of-plane法利用θ/2θ掃描進行測定時，觀察不到明確的峰值。也就是說，根據X射線繞射的分析結果，可知在測定區域中沒有a-b面方向及c軸方向上的配向。 CAC-OS has a characteristic that no clear peak is observed when measured by the out-of-plane method using θ/2θ scanning, which is one of X-ray diffraction (XRD: X-ray diffraction) measurement methods. That is, based on the X-ray diffraction analysis results, it was found that there was no alignment in the a-b plane direction and the c-axis direction in the measurement area.

另外，在藉由照射束徑為1nm的電子束(也稱為奈米束)而取得的CAC-OS的電子繞射圖案中，觀察到環狀的亮度高的區域以及在該環狀區域內的多個亮點。由此，根據電子繞射圖案，可知CAC-OS的結晶結構具有在平面方向及剖面方向上沒有配向的nc(nano-crystal：奈米晶)結構。 In addition, in the electron diffraction pattern of CAC-OS obtained by irradiating an electron beam with a beam diameter of 1 nm (also called a nanobeam), a ring-shaped region of high brightness and a ring-shaped region were observed of many highlights. From this, it was found from the electron diffraction pattern that the crystal structure of CAC-OS has an nc (nano-crystal: nanocrystal) structure that is not aligned in the plane direction and the cross-sectional direction.

另外，例如在In-Ga-Zn氧化物的CAC-OS中，根據藉由能量色散型X射線分析法(EDX：Energy Dispersive X-ray spectroscopy)取得的EDX面分析影像(EDX-mapping)，可確認到：具有以GaOX3為主要成分的區域及以InX2ZnY2OZ2或InOX1為主要成分的區域不均勻地分佈而混合的構成。 In addition, for example, in CAC-OS of In-Ga-Zn oxide, based on the EDX surface analysis image (EDX-mapping) obtained by energy dispersive X-ray spectroscopy (EDX: Energy Dispersive X-ray spectroscopy), it is possible to It was confirmed that a region containing GaO X3 as the main component and a region containing In X2 Zn Y2 O Z2 or InO

CAC-OS的結構與金屬元素均勻地分佈的IGZO化合物不同，具有與IGZO化合物不同的性質。換言之，CAC-OS具有以GaOX3等為主要成分的區域及 以InX2ZnY2OZ2或InOX1為主要成分的區域互相分離且以各元素為主要成分的區域為馬賽克狀的構成。 The structure of CAC-OS is different from that of IGZO compounds in which metal elements are uniformly distributed, and it has different properties from IGZO compounds. In other words, CAC-OS has a mosaic-like structure in which regions containing GaO X3 or the like as the main component and regions containing In X2 Zn Y2 O Z2 or InO

在此，以InX2ZnY2OZ2或InOX1為主要成分的區域的導電性高於以GaOX3等為主要成分的區域。換言之，當載子流過以InX2ZnY2OZ2或InOX1為主要成分的區域時，呈現氧化物半導體的導電性。因此，當以InX2ZnY2OZ2或InOX1為主要成分的區域在氧化物半導體中以雲狀分佈時，可以實現高場效移動率(μ)。 Here, the conductivity of a region containing In X2 Zn Y2 O Z2 or InO X1 as a main component is higher than that of a region containing GaO In other words, when carriers flow through a region containing In X2 Zn Y2 O Z2 or InO X1 as the main component, the conductivity of an oxide semiconductor is exhibited. Therefore , when a region mainly composed of In

另一方面，以GaOX3等為主要成分的區域的絕緣性高於以InX2ZnY2OZ2或InOX1為主要成分的區域。換言之，當以GaOX3等為主要成分的區域在氧化物半導體中分佈時，可以抑制洩漏電流而實現良好的切換工作。 On the other hand, a region containing GaO X3 or the like as a main component has higher insulation than a region containing In In other words, when a region containing GaO

因此，當將CAC-OS用於半導體元件時，藉由起因於GaOX3等的絕緣性及起因於InX2ZnY2OZ2或InOX1的導電性的互補作用可以實現高通態電流(Ion)及高場效移動率(μ)。 Therefore, when CAC-OS is used in a semiconductor device, a high on-state current (I on ) can be achieved through the complementary effects of insulation due to GaO X3 and the like and conductivity due to In X2 Zn Y2 O Z2 or InO X1 and high field efficiency mobility (μ).

另外，使用CAC-OS的半導體元件具有高可靠性。因此，CAC-OS適用於各種半導體裝置的構成材料。 In addition, semiconductor components using CAC-OS have high reliability. Therefore, CAC-OS is applicable to various constituent materials of semiconductor devices.

本實施方式可以與其他實施方式等中記載的結構適當地組合而實施。 This embodiment can be implemented in appropriate combination with the structures described in other embodiments and the like.

實施方式5 Embodiment 5

在本實施方式中，參照圖23A至圖23D說明本發明的一個實施方式的電子裝置。 In this embodiment, an electronic device according to one embodiment of the present invention will be described with reference to FIGS. 23A to 23D .

本實施方式的電子裝置包括本發明的一個實施方式的顯示裝置。由此，可以提高顯示在電子裝置的顯示部上的影像的顯示品質。 An electronic device according to this embodiment includes the display device according to one embodiment of the invention. Thereby, the display quality of the image displayed on the display part of the electronic device can be improved.

在本實施方式的電子裝置的顯示部上例如可以顯示具有全高清、2K、4K、8K、16K或更高的解析度的影像。另外，顯示部的螢幕尺寸可以為對角線20英寸以上、30英寸以上、50英寸以上、60英寸以上或70英寸以上。 The display unit of the electronic device according to this embodiment may display images with a resolution of, for example, Full HD, 2K, 4K, 8K, 16K or higher. In addition, the screen size of the display unit may be 20 inches or more, 30 inches or more, 50 inches or more, 60 inches or more, or 70 inches or more diagonally.

作為電子裝置，例如除了電視機、桌上型或膝上型個人電腦、用於電腦等的顯示器、數位看板(Digital Signage)、彈珠機等大型遊戲機等具有較大的螢幕的電子裝置以外，還可以舉出數位相機、數位攝影機、數位相框、行動電話機、可攜式遊戲機、可攜式資訊終端、音頻再生裝置等。 As an electronic device, for example, in addition to electronic devices with a large screen such as televisions, desktop or laptop personal computers, monitors for computers, digital signage, large game machines such as pachinko machines, etc. , can also include digital cameras, digital video cameras, digital photo frames, mobile phones, portable game consoles, portable information terminals, audio reproduction devices, etc.

本發明的一個實施方式的電子裝置也可以包括天線。藉由由天線接收信號，可以在顯示部上顯示影像或資訊等。另外，在電子裝置包括天線及二次電池時，可以將天線用於非接觸電力傳送。 An electronic device according to an embodiment of the present invention may also include an antenna. By receiving signals through the antenna, images, information, etc. can be displayed on the display unit. In addition, when the electronic device includes an antenna and a secondary battery, the antenna can be used for non-contact power transmission.

本發明的一個實施方式的電子裝置也可以包括感測器(該感測器具有測量如下因素的功能：力、位移、位置、速度、加速度、角速度、轉速、距離、光、液、磁、溫度、化學物質、聲音、時間、硬度、電場、電流、電壓、電力、輻射線、流量、濕度、傾斜度、振動、氣味或紅外線)。 The electronic device according to an embodiment of the present invention may also include a sensor (the sensor has the function of measuring the following factors: force, displacement, position, speed, acceleration, angular velocity, rotational speed, distance, light, liquid, magnetism, temperature , chemical substances, sound, time, hardness, electric field, current, voltage, electricity, radiation, flow, humidity, inclination, vibration, smell or infrared).

本發明的一個實施方式的電子裝置可以具有各種功能。例如，可以具有如下功能：將各種資訊(靜態影像、動態影像、文字影像等)顯示在顯示部上的功能；觸控屏的功能；顯示日曆、日期或時間等的功能；執行各種軟體(程式)的功能；進行無線通訊的功能；讀出儲存在存儲介質中的程式或資料的功能；等。 An electronic device according to an embodiment of the present invention may have various functions. For example, it may have the following functions: a function to display various information (still images, dynamic images, text images, etc.) on the display unit; a touch screen function; a function to display calendar, date, time, etc.; and to execute various software (programs) ) function; the function of wireless communication; the function of reading programs or data stored in storage media; etc.

圖23A示出電視機的一個例子。在電視機7100中，外殼7101中組裝有顯示部7000。在此示出利用支架7103支撐外殼7101的結構。 FIG. 23A shows an example of a television. In the television 7100, a display unit 7000 is incorporated in a casing 7101. Here, a structure in which the housing 7101 is supported by the bracket 7103 is shown.

可以對顯示部7000適用本發明的一個實施方式的顯示裝置。 The display device according to one embodiment of the present invention can be applied to the display unit 7000 .

可以藉由利用外殼7101所具備的操作開關或另外提供的遙控器7111進行圖23A所示的電視機7100的操作。另外，也可以在顯示部7000中具備觸控感測器，藉由用手指等觸摸顯示部7000可以進行電視機7100的操作。另外，也可以在遙控器7111中具備顯示從該遙控器7111輸出的資訊的顯示部。藉由利用遙控器7111所具備的操作鍵或觸控面板，可以進行頻道及音量的操作，並可以對顯示在顯示部7000上的影像進行操作。 The television 7100 shown in FIG. 23A can be operated by using the operation switches provided in the housing 7101 or the remote control 7111 provided separately. In addition, the display unit 7000 may be provided with a touch sensor, and the television 7100 may be operated by touching the display unit 7000 with a finger or the like. In addition, the remote controller 7111 may be provided with a display unit that displays information output from the remote controller 7111 . By using the operation keys or the touch panel provided in the remote controller 7111, the channel and volume can be operated, and the image displayed on the display unit 7000 can be operated.

另外，電視機7100採用具備接收機及數據機等的結構。可以藉由利用接收機接收一般的電視廣播。再者，藉由數據機將電視機7100連接到有線或無線方式的通訊網路，從而進行單向(從發送者到接收者)或雙向(發送者和接收者之間或接收者之間等)的資訊通訊。 In addition, the television 7100 is configured to include a receiver, a modem, and the like. General television broadcasts can be received by using a receiver. Furthermore, the TV 7100 is connected to a wired or wireless communication network through a modem, thereby performing one-way (from the sender to the receiver) or two-way (between the sender and the receiver or between the receivers, etc.) information communications.

圖23B示出筆記型個人電腦的一個例子。筆記型個人電腦7200包括外殼7211、鍵盤7212、指向裝置7213、外部連接埠7214等。在外殼7211中組裝有顯示部7000。 FIG. 23B shows an example of a notebook personal computer. The notebook personal computer 7200 includes a case 7211, a keyboard 7212, a pointing device 7213, an external connection port 7214, etc. The display unit 7000 is assembled in the housing 7211.

可以對顯示部7000適用本發明的一個實施方式的顯示裝置。 The display device according to one embodiment of the present invention can be applied to the display unit 7000 .

圖23C和圖23D示出數位看板的一個例子。 Figures 23C and 23D illustrate an example of a digital signage.

圖23C所示的數位看板7300包括外殼7301、顯示部7000及揚聲器7303等。另外，還可以包括LED燈、操作鍵(包括電源開關或操作開關)、連接端子、各種感測器以及麥克風等。 The digital signage 7300 shown in FIG. 23C includes a housing 7301, a display unit 7000, a speaker 7303, and the like. In addition, it may also include LED lights, operation keys (including power switches or operation switches), connection terminals, various sensors, microphones, etc.

圖23D示出設置於圓柱狀柱子7401上的數位看板7400。數位看板7400包括沿著柱子7401的曲面設置的顯示部7000。 Figure 23D shows a digital signage 7400 disposed on a cylindrical pillar 7401. The digital signage 7400 includes a display portion 7000 provided along the curved surface of the pillar 7401.

在圖23C和圖23D中，可以對顯示部7000適用本發明的一個實施方式的顯示裝置。 In FIGS. 23C and 23D , the display device according to one embodiment of the present invention can be applied to the display unit 7000 .

顯示部7000越大，顯示裝置一次能夠提供的資訊量越多。顯示部7000越大，容易吸引人的注意，例如可以提高廣告宣傳效果。 The larger the display unit 7000 is, the greater the amount of information the display device can provide at one time. The larger the display unit 7000 is, the easier it is to attract attention, which can improve the effect of advertising, for example.

藉由將觸控面板用於顯示部7000，不僅可以在顯示部7000上顯示靜態影像或動態影像，使用者還能夠直覺性地進行操作，所以是較佳的。另外，在用於提供路線資訊或交通資訊等資訊的用途時，可以藉由直覺性的操作提高易用性。 By using a touch panel for the display unit 7000, not only can a still image or a moving image be displayed on the display unit 7000, but the user can also perform operations intuitively, which is preferable. In addition, when used to provide information such as route information or traffic information, the usability can be improved through intuitive operations.

如圖23C和圖23D)所示，數位看板7300或數位看板7400較佳為藉由無線通訊可以與使用者所攜帶的智慧手機等資訊終端設備7311或資訊終端設備7411聯動。例如，顯示在顯示部7000上的廣告的資訊可以顯示在資訊終端設備7311或資訊終端設備7411的螢幕。此外，藉由操作資訊終端設備7311或資訊終端設備7411，可以切換顯示部7000的顯示。 As shown in Figure 23C and Figure 23D), the digital signage 7300 or the digital signage 7400 can preferably be linked with the information terminal device 7311 or the information terminal device 7411 such as a smartphone carried by the user through wireless communication. For example, the information of the advertisement displayed on the display unit 7000 may be displayed on the screen of the information terminal device 7311 or the information terminal device 7411. In addition, by operating the information terminal device 7311 or the information terminal device 7411, the display of the display unit 7000 can be switched.

此外，可以在數位看板7300或數位看板7400上以資訊終端設備7311或資訊終端設備7411的螢幕為操作單元(控制器)執行遊戲。由此，不特定多個使用者可以同時參加遊戲，享受遊戲的樂趣。 In addition, the game can be executed on the digital signage 7300 or the digital signage 7400 using the screen of the information terminal device 7311 or the information terminal device 7411 as an operating unit (controller). As a result, multiple unspecified users can participate in the game at the same time and enjoy the fun of the game.

可以將本發明的一個實施方式的顯示裝置沿著房屋或高樓的內壁或外壁、車輛的內部裝飾或外部裝飾的曲面組裝。 The display device according to one embodiment of the present invention can be assembled along the curved surface of an inner or outer wall of a house or a high-rise building, or an interior or exterior decoration of a vehicle.

本實施方式可以與其他實施方式等所記載的結構適當地組合而實施。 This embodiment can be implemented in appropriate combination with the structures described in other embodiments and the like.

實施例1 Example 1

在本實施例中說明顯示裝置具有包括四個顯示面板的結構時進行影像校正的結果。 This embodiment describes the results of image correction when the display device has a structure including four display panels.

圖24是說明本實施例中顯示影像的顯示裝置的圖。如圖24所示，在將顯示面板(顯示面板DP[1，1]、顯示面板DP[2，1]、顯示面板DP[1，2]及顯示面板DP[2，2])排列為2行2列的顯示裝置中顯示影像。在顯示面板中分別設置有720行1280列的像素。 FIG. 24 is a diagram illustrating a display device for displaying images in this embodiment. As shown in Figure 24, the display panels (display panel DP[1,1], display panel DP[2,1], display panel DP[1,2] and display panel DP[2,2]) are arranged into 2 The image is displayed on a display device with rows and columns. The display panel is provided with 720 rows and 1280 columns of pixels respectively.

在此，將顯示面板DP[1，1]中的從顯示面板DP[1，1]和顯示面板DP[1，2]的邊界設置有相當於320列的像素的區域稱為邊界部229A。另外，將顯示面板DP[2，1]中的從顯示面板DP[2，1]和顯示面板DP[2，2]的邊界設置有相當於320列的像素的區域稱為邊界部229B。另外，將顯示面板DP[1，2]中的從顯示面板DP[1，1]和顯示面板DP[1，2]的邊界設置有相當於320列的像素的區域稱為邊界部229C。另外，顯示面板DP[2，2]中的從顯示面板DP[2，1]和顯示面板DP[2，2]的邊界設置有相當於320列的像素的區域稱為邊界部229D。 Here, a region in the display panel DP[1,1] in which pixels equivalent to 320 columns are provided from the boundary between the display panel DP[1,1] and the display panel DP[1,2] is called a boundary portion 229A. In addition, a region in the display panel DP[2,1] in which pixels equivalent to 320 columns are provided from the boundary between the display panel DP[2,1] and the display panel DP[2,2] is called a boundary portion 229B. In addition, a region in the display panel DP[1,2] in which pixels equivalent to 320 columns are provided from the boundary between the display panel DP[1,1] and the display panel DP[1,2] is called a boundary portion 229C. In addition, in the display panel DP[2,2], a region equivalent to 320 columns of pixels is provided from the boundary between the display panel DP[2,1] and the display panel DP[2,2] is called a boundary portion 229D.

在本實施例中，首先藉由圖15所示的方法形成每個顯示面板的校正濾波器。在此，設置在顯示面板中的像素能夠表示灰階值0至255，並且步驟S23及步驟S26中顯示的影像是所有的像素的灰階值為127的影像。 In this embodiment, the correction filter of each display panel is first formed by the method shown in FIG. 15 . Here, the pixels provided in the display panel can represent grayscale values 0 to 255, and the image displayed in steps S23 and S26 is an image in which the grayscale value of all pixels is 127.

接著，算出與設置在邊界部229A及邊界部229B中的像素對應的濾波值的平均值DAB、以及與邊界部229C及邊界部229D中的像素對應的濾波值的平均值DCD。然後，藉由修正校正濾波器以使與設置在顯示面板DP[1，2]及顯示面板DP[2，2]中的像素對應的濾波值為DAB/DCD倍，來形成新的校正濾波器。 Next, the average value D AB of the filter values corresponding to the pixels provided in the boundary portion 229A and the boundary portion 229B, and the average value D CD of the filter values corresponding to the pixels in the boundary portion 229C and the boundary portion 229D are calculated. Then, a new correction is formed by modifying the correction filter so that the filter values corresponding to the pixels provided in the display panel DP[1, 2] and the display panel DP[2, 2] are D AB /D CD times filter.

在圖25A中示出對藉由圖15所示的方法形成的濾波器沒有修正並顯示影像時的顯示結果。圖25B示出對藉由圖15所示的方法形成的濾波器進行上述方法的修正來形成新的校正濾波器並顯示影像時的顯示結果。 FIG. 25A shows the display result when the filter formed by the method shown in FIG. 15 is not corrected and the image is displayed. FIG. 25B shows the display result when the filter formed by the method shown in FIG. 15 is corrected by the above method to form a new correction filter and display the image.

在圖25A所示的影像中顯示面板的接縫明顯被看到。另一方面，在圖25B所示的影像中，與圖25A所示的影像相比，顯示面板的接縫不容易被看到，並且顯示面板間的色調的不均勻得到減少。 The seams of the display panel are clearly visible in the image shown in Figure 25A. On the other hand, in the image shown in FIG. 25B , compared with the image shown in FIG. 25A , the seams of the display panels are less visible, and the unevenness of the color tone between the display panels is reduced.

實施例2 Example 2

在本實施例中說明在顯示裝置具有包括一個顯示面板的結構時從該顯示面板所包括的像素發射的光的亮度分佈的測定結果。 This embodiment explains the measurement results of the brightness distribution of light emitted from pixels included in the display panel when the display device has a structure including the display panel.

在本實施例中，在一個顯示面板上顯示使用藉由圖15所示的方法形成的校正濾波器進行了校正的影像。在此，設置在該顯示面板中的像素能夠表示灰階值0至255，並且步驟S23中顯示的影像及校正了的影像是所有的像素的灰階值為127的影像。此外，在步驟S23及步驟S26中，利用二維亮度計對從像素發射的光的亮度進行測定。 In this embodiment, an image corrected using the correction filter formed by the method shown in FIG. 15 is displayed on a display panel. Here, the pixels provided in the display panel can represent grayscale values 0 to 255, and the image displayed in step S23 and the corrected image are images in which the grayscale value of all pixels is 127. Furthermore, in steps S23 and S26, the brightness of the light emitted from the pixel is measured using a two-dimensional luminance meter.

圖26A示出顯示有校正之前的影像的顯示面板的亮度資料，該亮度資料是在步驟S23中使用二維亮度計得到的。在圖26B示出顯示有校正之後的影像的顯示面板的亮度資料，該亮度資料是在形成校正濾波器之後使用二維亮度計得到的。 FIG. 26A shows the brightness data of the display panel displaying the image before correction. The brightness data is obtained using a two-dimensional luminance meter in step S23. FIG. 26B shows the brightness data of the display panel displaying the corrected image. The brightness data is obtained using a two-dimensional luminance meter after forming the correction filter.

在顯示面板顯示校正之前的影像的情況下，如圖26A所示，顯示面板的中央部分的亮度高於顯示面板的周邊部分的亮度。另一方面，在顯示面板顯示校正之後的影像的情況下，如圖26B所示那樣，與校正之前相比，顯示面板整體中的亮度被均勻化。 When the display panel displays an image before correction, as shown in FIG. 26A , the brightness of the center portion of the display panel is higher than the brightness of the peripheral portion of the display panel. On the other hand, when the display panel displays the image after correction, as shown in FIG. 26B , the brightness of the entire display panel is equalized compared to before correction.

S01、S02、S03、S04、S011、S012、S013‧‧‧步驟 S01, S02, S03, S04, S011, S012, S013‧‧‧Steps

Claims (3)

一種包括包含將m行n列的第一像素排列為矩陣狀的第一像素部的第一顯示面板及包含將m行n列的第二像素排列為矩陣狀的第二像素部的第二顯示面板的顯示裝置的工作方法，其中第m行的該第一像素和第1行的該第二像素鄰接，m、n為2以上的整數，包括如下步驟：形成用於校正顯示在該第一像素部的影像的第一校正濾波器；形成用於校正顯示在該第二像素部的影像的第二校正濾波器；該第一校正濾波器具有與該第一像素對應的濾波值；該第二校正濾波器具有與該第二像素對應的濾波值；對對應於設置在與該第二像素部的邊界部中的該第一像素的濾波值的平均值和對應於設置在與該第一像素部的邊界部中的該第二像素的濾波值的平均值進行比較；以及根據該比較結果，對該第一校正濾波器的濾波值進行修正。 A first display panel including a first pixel portion in which first pixels in m rows and n columns are arranged in a matrix and a second display panel including a second pixel portion in which second pixels in m rows and n columns are arranged in a matrix. The working method of the display device of the panel, wherein the first pixel in the m-th row is adjacent to the second pixel in the first row, m and n are integers above 2, including the following steps: forming a method for correcting the display on the first a first correction filter for the image of the pixel portion; a second correction filter formed for correcting the image displayed on the second pixel portion; the first correction filter has a filter value corresponding to the first pixel; the third correction filter Two correction filters have filter values corresponding to the second pixel; an average value of the filter values corresponding to the first pixel provided in the boundary portion with the second pixel portion and a mean value corresponding to the filter value provided in the boundary portion with the first pixel The average value of the filter value of the second pixel in the boundary part of the pixel part is compared; and based on the comparison result, the filter value of the first correction filter is corrected. 一種包括包含將m行n列的第一像素排列為矩陣狀的第一像素部的第一顯示面板及包含將m行n列的第二像素排列為矩陣狀的第二像素部的第二顯示面板的顯示裝置的工作方法，其中第m行的該第一像素和第1行的該第二像素鄰接，m、n為2以上的整數，包括如下步驟：形成用於校正顯示在該第一像素部的影像的第一校正濾波器；形成用於校正顯示在該第二像素部的影像的第二校正濾波器；該第一校正濾波器具有與該第一像素對應的濾波值；該第二校正濾波器具有與該第二像素對應的濾波值； 對對應於設置在與該第二像素部的邊界部中的該第一像素的濾波值的平均值和對應於設置在與該第一像素部的邊界部中的該第二像素的濾波值的平均值進行比較；以及根據該比較結果，對該第一校正濾波器的濾波值進行修正，其中該第一校正濾波器藉由如下方法形成：藉由對當在該第一像素上顯示多個灰階值的影像時的從該第一像素發射的光的亮度進行測定來得到從該第一像素發射的光的亮度和該第一像素的灰階值的對應關係的資料，藉由對當在該第一像素部顯示預定的灰階值的影像時的從該第一像素發射的光的亮度進行測定，來得到亮度資料，並且，使用該對應關係的資料及該亮度資料形成該第一校正濾波器。 A first display panel including a first pixel portion in which first pixels in m rows and n columns are arranged in a matrix and a second display panel including a second pixel portion in which second pixels in m rows and n columns are arranged in a matrix. The working method of the display device of the panel, wherein the first pixel in the m-th row is adjacent to the second pixel in the first row, m and n are integers above 2, including the following steps: forming a method for correcting the display on the first a first correction filter for the image of the pixel portion; a second correction filter formed for correcting the image displayed on the second pixel portion; the first correction filter has a filter value corresponding to the first pixel; the third correction filter The second correction filter has a filter value corresponding to the second pixel; The average value of the filter value corresponding to the first pixel provided in the boundary part with the second pixel part and the filter value corresponding to the second pixel provided in the boundary part with the first pixel part Compare the average values; and correct the filter value of the first correction filter according to the comparison result, wherein the first correction filter is formed by the following method: by displaying a plurality of values on the first pixel The brightness of the light emitted from the first pixel is measured when the image of the gray scale value is used to obtain data on the correspondence between the brightness of the light emitted from the first pixel and the gray scale value of the first pixel, by measuring the current When the first pixel portion displays an image with a predetermined gray scale value, the brightness of the light emitted from the first pixel is measured to obtain brightness data, and the data of the correspondence relationship and the brightness data are used to form the first Correction filter. 根據請求項2之顯示裝置的工作方法，其中該預定的灰階值的影像為所有的該第一像素的灰階值相等的影像。 According to the working method of the display device of claim 2, wherein the image of the predetermined gray scale value is an image in which the gray scale values of all the first pixels are equal.
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Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6960391B2 (en) * 2018-12-21 2021-11-05 Eizo株式会社 Information processing system, information processing method, and computer program
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Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1259823A (en) * 1998-11-12 2000-07-12 Oec医疗系统公司 Method and device for decreasing motion skewness and noise during video frequency treatment
US20040252228A1 (en) * 2003-04-02 2004-12-16 Olympus Corporation Multiple-screen display and a method of controlling the same
JP2009063607A (en) * 2007-09-04 2009-03-26 Seiko Epson Corp Electro-optical device, method for controlling electro-optical device, and electronic device
CN101510401A (en) * 2007-12-18 2009-08-19 索尼株式会社 Image processing device, image display system, image processing method and program therefor
CN101816032A (en) * 2007-09-28 2010-08-25 松下电器产业株式会社 Light-emitting element circuit and active matrix type display device
CN103927974A (en) * 2013-01-11 2014-07-16 索尼公司 Display, Image Processing Unit, Image Processing Method, And Electronic Apparatus
US20150310806A1 (en) * 2014-04-23 2015-10-29 Shanghai Tianma AM-OLED Co., Ltd. Organic light emitting display device, pixel circuit of the same and driving method thereof

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3287007B2 (en) * 1991-05-24 2002-05-27 株式会社日立製作所 Multi-screen display
JP4501205B2 (en) * 2000-02-08 2010-07-14 日亜化学工業株式会社 Correction system and correction method for image display device
JP3904888B2 (en) * 2001-10-29 2007-04-11 旭化成マイクロシステム株式会社 Display panel drive circuit
JP4062179B2 (en) * 2003-06-04 2008-03-19 ソニー株式会社 Pixel circuit, display device, and driving method of pixel circuit
EP1489560A1 (en) * 2003-06-17 2004-12-22 Koninklijke Philips Electronics N.V. Primitive edge pre-filtering
JP2008109329A (en) * 2006-10-25 2008-05-08 Infovision Optoelectronics Holdings Ltd Gamma correction circuit for video signal
JP2009159371A (en) 2007-12-27 2009-07-16 Seiko Epson Corp Device and method for adjusting image, and image display system
JP5157753B2 (en) * 2008-08-27 2013-03-06 カシオ計算機株式会社 Image processing apparatus, image processing method, and image processing program
JP2012123085A (en) * 2010-12-07 2012-06-28 Mitsubishi Electric Corp Multi-screen display apparatus
JP5949754B2 (en) 2011-03-03 2016-07-13 日本電気株式会社 Multi-projection display and brightness adjustment method thereof
JP5708140B2 (en) * 2011-03-30 2015-04-30 ソニー株式会社 Display device and electronic device
JP5818674B2 (en) * 2011-12-21 2015-11-18 株式会社東芝 Image processing apparatus, method, program, and image display apparatus
JP5752866B2 (en) * 2013-03-28 2015-07-22 富士フイルム株式会社 Image processing apparatus, imaging apparatus, image processing method, program, and recording medium
KR102117889B1 (en) * 2013-12-11 2020-06-02 엘지디스플레이 주식회사 Pixel circuit of display device, organic light emitting display device and method for driving thereof
KR102175702B1 (en) 2013-12-30 2020-11-09 삼성디스플레이 주식회사 Method of compensating mura of display apparatus and vision inspection apparatus performing the method
JP6309777B2 (en) * 2014-02-10 2018-04-11 シナプティクス・ジャパン合同会社 Display device, display panel driver, and display panel driving method
CN112002242B (en) * 2014-11-28 2023-04-25 株式会社半导体能源研究所 Image processing device, display system, and electronic apparatus
CN106157253B (en) * 2015-04-17 2019-09-03 瑞昱半导体股份有限公司 Image processing apparatus and image processing method
JP2017116587A (en) 2015-12-21 2017-06-29 三菱重工業株式会社 Display, air conditioner including the same, and method of controlling display
CN106710517B (en) * 2016-11-17 2019-01-29 西安诺瓦电子科技有限公司 LED display bearing calibration

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1259823A (en) * 1998-11-12 2000-07-12 Oec医疗系统公司 Method and device for decreasing motion skewness and noise during video frequency treatment
US20040252228A1 (en) * 2003-04-02 2004-12-16 Olympus Corporation Multiple-screen display and a method of controlling the same
JP2009063607A (en) * 2007-09-04 2009-03-26 Seiko Epson Corp Electro-optical device, method for controlling electro-optical device, and electronic device
CN101816032A (en) * 2007-09-28 2010-08-25 松下电器产业株式会社 Light-emitting element circuit and active matrix type display device
CN101510401A (en) * 2007-12-18 2009-08-19 索尼株式会社 Image processing device, image display system, image processing method and program therefor
CN103927974A (en) * 2013-01-11 2014-07-16 索尼公司 Display, Image Processing Unit, Image Processing Method, And Electronic Apparatus
US20150310806A1 (en) * 2014-04-23 2015-10-29 Shanghai Tianma AM-OLED Co., Ltd. Organic light emitting display device, pixel circuit of the same and driving method thereof

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