TWI810232B - 氧化矽膜用研磨液組合物 - Google Patents

氧化矽膜用研磨液組合物 Download PDF

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Publication number
TWI810232B
TWI810232B TW107147620A TW107147620A TWI810232B TW I810232 B TWI810232 B TW I810232B TW 107147620 A TW107147620 A TW 107147620A TW 107147620 A TW107147620 A TW 107147620A TW I810232 B TWI810232 B TW I810232B
Authority
TW
Taiwan
Prior art keywords
polishing
silicon oxide
oxide film
water
group
Prior art date
Application number
TW107147620A
Other languages
English (en)
Chinese (zh)
Other versions
TW201930543A (zh
Inventor
內田洋平
Original Assignee
日商花王股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商花王股份有限公司 filed Critical 日商花王股份有限公司
Publication of TW201930543A publication Critical patent/TW201930543A/zh
Application granted granted Critical
Publication of TWI810232B publication Critical patent/TWI810232B/zh

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
TW107147620A 2017-12-28 2018-12-28 氧化矽膜用研磨液組合物 TWI810232B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017-253993 2017-12-28
JP2017253993A JP6837958B2 (ja) 2017-12-28 2017-12-28 酸化珪素膜用研磨液組成物

Publications (2)

Publication Number Publication Date
TW201930543A TW201930543A (zh) 2019-08-01
TWI810232B true TWI810232B (zh) 2023-08-01

Family

ID=67066422

Family Applications (1)

Application Number Title Priority Date Filing Date
TW107147620A TWI810232B (zh) 2017-12-28 2018-12-28 氧化矽膜用研磨液組合物

Country Status (7)

Country Link
US (1) US11795346B2 (enExample)
JP (2) JP6837958B2 (enExample)
KR (1) KR102701367B1 (enExample)
CN (1) CN111511870B (enExample)
SG (1) SG11202005634VA (enExample)
TW (1) TWI810232B (enExample)
WO (1) WO2019131545A1 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7252073B2 (ja) * 2019-06-26 2023-04-04 花王株式会社 酸化珪素膜用研磨液組成物
JP7550771B2 (ja) * 2019-09-10 2024-09-13 株式会社フジミインコーポレーテッド 研磨用組成物
JP7464432B2 (ja) * 2019-11-13 2024-04-09 花王株式会社 半導体デバイス用基板に用いる洗浄剤組成物
CN113496868B (zh) * 2020-04-03 2023-03-10 重庆超硅半导体有限公司 一种硅片的抛光后清洗方法
JP7425660B2 (ja) * 2020-04-07 2024-01-31 花王株式会社 酸化珪素膜用研磨液組成物
WO2022102019A1 (ja) * 2020-11-11 2022-05-19 昭和電工マテリアルズ株式会社 研磨液及び研磨方法
CN116507688A (zh) * 2020-11-27 2023-07-28 花王株式会社 氧化硅膜用研磨液组合物

Citations (3)

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JP2009260236A (ja) * 2008-03-18 2009-11-05 Hitachi Chem Co Ltd 研磨剤、これを用いた基板の研磨方法並びにこの研磨方法に用いる溶液及びスラリー
TW201231580A (en) * 2006-01-31 2012-08-01 Hitachi Chemical Co Ltd CMP abrasive for polishing insulating film, polishing method and semiconductor electronic parts polished by the polishing method
JP2017190381A (ja) * 2016-04-12 2017-10-19 花王株式会社 表面処理剤

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JP2000109810A (ja) 1998-10-08 2000-04-18 Hitachi Chem Co Ltd Ｃｍｐ研磨剤及び基板の研磨方法
JP2003158101A (ja) 2001-11-20 2003-05-30 Hitachi Chem Co Ltd Ｃｍｐ研磨剤及び製造方法
JP2004297035A (ja) 2003-03-13 2004-10-21 Hitachi Chem Co Ltd 研磨剤、研磨方法及び電子部品の製造方法
WO2006009160A1 (ja) * 2004-07-23 2006-01-26 Hitachi Chemical Co., Ltd. Ｃｍｐ研磨剤及び基板の研磨方法
US7435356B2 (en) 2004-11-24 2008-10-14 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Abrasive-free chemical mechanical polishing compositions and methods relating thereto
JP2007103485A (ja) * 2005-09-30 2007-04-19 Fujifilm Corp 研磨方法及びそれに用いる研磨液
US7732393B2 (en) 2006-03-20 2010-06-08 Cabot Microelectronics Corporation Oxidation-stabilized CMP compositions and methods
WO2007146680A1 (en) * 2006-06-06 2007-12-21 Florida State University Research Foundation , Inc. Stabilized silica colloid
US20090215266A1 (en) 2008-02-22 2009-08-27 Thomas Terence M Polishing Copper-Containing patterned wafers
KR101678114B1 (ko) 2008-09-26 2016-11-21 로디아 오퍼레이션스 화학적 기계적 폴리싱용 연마제 조성물 및 그의 이용 방법
JP2010272733A (ja) * 2009-05-22 2010-12-02 Hitachi Chem Co Ltd 研磨剤及びこの研磨剤を用いた基板の研磨方法
JP6350861B2 (ja) 2014-07-15 2018-07-04 スピードファム株式会社 コロイダルシリカ及びそれを含有する半導体ウエハ研磨用組成物
JP6655354B2 (ja) * 2014-12-26 2020-02-26 花王株式会社 シリコンウェーハ用研磨液組成物、又はシリコンウェーハ用研磨液組成物キット
US20180265372A1 (en) * 2015-09-30 2018-09-20 Nippon Shokubai Co., Ltd. Zirconium oxide nanoparticles

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201231580A (en) * 2006-01-31 2012-08-01 Hitachi Chemical Co Ltd CMP abrasive for polishing insulating film, polishing method and semiconductor electronic parts polished by the polishing method
JP2009260236A (ja) * 2008-03-18 2009-11-05 Hitachi Chem Co Ltd 研磨剤、これを用いた基板の研磨方法並びにこの研磨方法に用いる溶液及びスラリー
JP2017190381A (ja) * 2016-04-12 2017-10-19 花王株式会社 表面処理剤

Also Published As

Publication number Publication date
JP7133667B2 (ja) 2022-09-08
TW201930543A (zh) 2019-08-01
US11795346B2 (en) 2023-10-24
CN111511870B (zh) 2022-05-06
SG11202005634VA (en) 2020-07-29
JP6837958B2 (ja) 2021-03-03
CN111511870A (zh) 2020-08-07
KR20200101918A (ko) 2020-08-28
WO2019131545A1 (ja) 2019-07-04
JP2019121641A (ja) 2019-07-22
US20200369919A1 (en) 2020-11-26
JP2021100126A (ja) 2021-07-01
KR102701367B1 (ko) 2024-08-30

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