TWI804658B - Metal-clad laminates and circuit boards - Google Patents

Metal-clad laminates and circuit boards Download PDF

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TWI804658B
TWI804658B TW108126128A TW108126128A TWI804658B TW I804658 B TWI804658 B TW I804658B TW 108126128 A TW108126128 A TW 108126128A TW 108126128 A TW108126128 A TW 108126128A TW I804658 B TWI804658 B TW I804658B
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polyimide
diamine
polyimide layer
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TW202010635A (en
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須藤芳樹
鈴木智之
安達康弘
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日商日鐵化學材料股份有限公司
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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00Layered products comprising a layer of metal
    • B32B15/04Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
    • B32B15/08Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00Layered products comprising a layer of metal
    • B32B15/04Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
    • B32B15/08Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
    • B32B15/088Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin comprising polyamides
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00Layered products comprising a layer of synthetic resin
    • B32B27/28Layered products comprising a layer of synthetic resin comprising synthetic resins not wholly covered by any one of the sub-groups B32B27/30 - B32B27/42
    • B32B27/281Layered products comprising a layer of synthetic resin comprising synthetic resins not wholly covered by any one of the sub-groups B32B27/30 - B32B27/42 comprising polyimides
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/10Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/10Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • C08G73/1042Copolyimides derived from at least two different tetracarboxylic compounds or two different diamino compounds
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/10Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • C08G73/1075Partially aromatic polyimides
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/03Use of materials for the substrate
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/03Use of materials for the substrate
    • H05K1/0313Organic insulating material
    • H05K1/032Organic insulating material consisting of one material
    • H05K1/0346Organic insulating material consisting of one material containing N
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/38Improvement of the adhesion between the insulating substrate and the metal

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Laminated Bodies (AREA)

Abstract

一種覆金屬積層板,包括:含有多個聚醯亞胺層的樹脂積層體;以及積層於樹脂積層體的至少單面的金屬層,樹脂積層體滿足i)整體的厚度為40 μm~200 μm的範圍內;ii)包含與金屬層接觸的第一聚醯亞胺層、以及直接或間接地積層於第一聚醯亞胺層上的第二聚醯亞胺層;iii)第二聚醯亞胺層的厚度相對於樹脂積層體的整體的厚度的比率為70%~97%的範圍內;iv)基於E1 =√ε1 ×Tanδ1 計算出的作為表示介電特性的指標的E1 值未滿0.009, [此處,ε1 表示藉由分離介電質共振器(SPDR)進行測定的10 GHz下的介電常數,Tanδ1 表示藉由分離介電質共振器(SPDR)進行測定的10 GHz下的介電正切]。A metal-clad laminate, comprising: a resin laminate containing a plurality of polyimide layers; and a metal layer laminated on at least one side of the resin laminate, wherein the resin laminate satisfies i) the overall thickness is 40 μm to 200 μm within the range; ii) comprising a first polyimide layer in contact with the metal layer, and a second polyimide layer directly or indirectly laminated on the first polyimide layer; iii) a second polyimide layer The ratio of the thickness of the imide layer to the thickness of the entire resin laminate is in the range of 70% to 97%; iv) E calculated based on E 1 =√ε 1 ×Tanδ 1 as an index indicating the dielectric properties The value of 1 is less than 0.009, [here, ε 1 represents the dielectric constant at 10 GHz measured by a split dielectric resonator (SPDR), and Tanδ 1 represents the dielectric constant measured by a split dielectric resonator (SPDR). Measured dielectric tangent at 10 GHz].

Description

覆金屬積層板和電路基板Metal-clad laminates and circuit boards

本發明是有關於一種可應對伴隨著電子設備的小型化.高性能化的高頻化的覆金屬積層板和電路基板。 The present invention relates to a device that can cope with the miniaturization of electronic equipment. High-performance, high-frequency metal-clad laminates and circuit boards.

近年來,伴隨著電子設備的小型化、輕量化、省空間化的進展,對於薄且輕量、具有可撓性並且即便反覆彎曲亦具有優異的耐久性的撓性電路基板(撓性印刷電路(Flexible Printed Circuits,FPC))的需要增大。關於FPC,即便在有限的空間亦可實現立體性且高密度的安裝,因此例如於硬式磁碟機(Hard Disk Drive,HDD)、數位影音光碟(Digital Video Disk,DVD)、行動電話、智慧型手機等電子設備的配線、或者電纜、連接器等零件中其用途逐漸擴大。 In recent years, with the advancement of miniaturization, weight reduction, and space saving of electronic equipment, flexible circuit boards (flexible printed circuit boards (flexible printed circuit boards) (Flexible Printed Circuits, FPC)) needs to increase. Regarding FPC, even in a limited space, three-dimensional and high-density installation can be achieved, so for example, in hard disk drives (Hard Disk Drive, HDD), digital video discs (Digital Video Disk, DVD), mobile phones, smart phones, etc. Its use is gradually expanding in the wiring of electronic devices such as mobile phones, or in parts such as cables and connectors.

於資訊處理或資訊通信中,為了傳輸、處理大容量的資訊,執行了提高傳輸頻率的措施,電路基板材料要求降低絕緣樹脂層的低介電化引起的傳輸損失。因此,為了應對高頻化,使用將以低介電常數、低介電正切為特徵的液晶聚合物作為介電層的FPC。然而,液晶聚合物雖介電特性優異,但耐熱性或與金屬箔的接著性存在改善的餘地,因此作為耐熱性或接著性優異的絕緣樹脂材料,聚醯亞胺備受矚目。 In information processing or information communication, in order to transmit and process large-capacity information, measures to increase the transmission frequency are implemented, and the circuit board material is required to reduce the transmission loss caused by the low dielectric of the insulating resin layer. Therefore, in order to cope with higher frequencies, FPCs using liquid crystal polymers featuring low dielectric constant and low dielectric tangent as a dielectric layer are used. However, although liquid crystal polymers have excellent dielectric properties, there is room for improvement in heat resistance and adhesion to metal foils. Therefore, polyimides have attracted attention as insulating resin materials excellent in heat resistance and adhesion.

為了改善電路基板的高頻傳輸特性,提出了使用介電特性得到改善的聚醯亞胺(例如,專利文獻1~專利文獻3)。 In order to improve the high-frequency transmission characteristics of circuit boards, it has been proposed to use polyimides with improved dielectric properties (for example, Patent Document 1 to Patent Document 3).

另一方面,亦提出了藉由貼合兩個單面覆銅積層板的聚醯亞胺樹脂面而製造絕緣樹脂層的厚度為50μm以上的兩面覆銅積層板(例如,專利文獻4、專利文獻5)。 On the other hand, it is also proposed to manufacture a double-sided copper-clad laminate with a thickness of 50 μm or more by bonding the polyimide resin surfaces of two single-sided copper-clad laminates (for example, Patent Document 4, Patent Document 5).

[現有技術文獻] [Prior art literature] [專利文獻] [Patent Document]

專利文獻1:日本專利特開2016-193501號公報 Patent Document 1: Japanese Patent Laid-Open No. 2016-193501

專利文獻2:日本專利特開2016-192530號公報 Patent Document 2: Japanese Patent Laid-Open No. 2016-192530

專利文獻3:國際公開WO2018/061727號 Patent Document 3: International Publication No. WO2018/061727

專利文獻4:日本專利第5886027號公報 Patent Document 4: Japanese Patent No. 5886027

專利文獻5:日本專利第6031396號公報 Patent Document 5: Japanese Patent No. 6031396

在電路基板中,預計今後對高頻化的要求將日益增強,對於高頻傳輸特性的要求水準將變得嚴格。就所述觀點而言,不僅絕緣樹脂層的介電特性的改善、而且增大絕緣樹脂層的厚度的選擇項亦變為必須。但是,專利文獻1~專利文獻3的實施例中,絕緣樹脂層的厚度為25μm左右,並未研究過厚膜化為例如超過50μm的厚度。 In circuit boards, it is expected that the demand for higher frequency will increase in the future, and the required level for high-frequency transmission characteristics will become stricter. From this point of view, not only the improvement of the dielectric properties of the insulating resin layer but also the option of increasing the thickness of the insulating resin layer becomes necessary. However, in the examples of Patent Document 1 to Patent Document 3, the thickness of the insulating resin layer is about 25 μm, and there is no study on increasing the thickness of the film to a thickness exceeding 50 μm, for example.

另一方面,專利文獻4、專利文獻5中,並未考慮對高頻傳輸的應對,亦未研究採用厚膜的絕緣樹脂層時的聚醯亞胺的構成。 On the other hand, in Patent Document 4 and Patent Document 5, the response to high-frequency transmission is not considered, and the configuration of polyimide when a thick insulating resin layer is used is not studied.

本發明在於提供一種可充分確保絕緣樹脂層的厚度、且可應對伴隨著電子設備的高性能化的高頻傳輸的覆金屬積層板和電路基板。 The present invention aims to provide a metal-clad laminate and a circuit board capable of ensuring sufficient thickness of an insulating resin layer and capable of responding to high-frequency transmission accompanied by high-performance electronic devices.

本發明者等人發現藉由設置厚度大的絕緣樹脂層且考慮構成所述絕緣樹脂層的聚醯亞胺的介電特性,可解決所述課題,從而完成了本發明。 The inventors of the present invention found that the above problems can be solved by providing a thick insulating resin layer and considering the dielectric properties of polyimide constituting the insulating resin layer, and completed the present invention.

即,本發明的覆金屬積層板為如下覆金屬積層板,包括:含有多個聚醯亞胺層的樹脂積層體;以及積層於所述樹脂積層體的至少單面的金屬層。 That is, the metal-clad laminate of the present invention is a metal-clad laminate comprising: a resin laminate including a plurality of polyimide layers; and a metal layer laminated on at least one surface of the resin laminate.

本發明的覆金屬積層板的特徵在於:所述樹脂積層體滿足以下i)~iv)的條件:i)整體的厚度為40μm~200μm的範圍內;ii)包含與所述金屬層接觸的第一聚醯亞胺層、以及直接或間接地積層於所述第一聚醯亞胺層上的第二聚醯亞胺層;iii)所述第二聚醯亞胺層的厚度相對於所述樹脂積層體的整體的厚度的比率為70%~97%的範圍內;iv)基於下述數式(a)計算出的作為表示介電特性的指標的E1值未滿0.009:

Figure 108126128-A0305-02-0005-1
The metal-clad laminate of the present invention is characterized in that the resin laminate satisfies the following conditions i) to iv): i) the overall thickness is in the range of 40 μm to 200 μm; ii) includes a second layer in contact with the metal layer. a polyimide layer, and a second polyimide layer laminated directly or indirectly on the first polyimide layer; iii) the thickness of the second polyimide layer is relative to the The ratio of the overall thickness of the resin laminate is in the range of 70% to 97%; iv) The E 1 value calculated based on the following formula (a) as an index indicating the dielectric properties is less than 0.009:
Figure 108126128-A0305-02-0005-1

[此處,ε1表示藉由分離介電質共振器(分離介質諧振器(split post dielectric resonator,SPDR))進行測定的10GHz下的介電常數,Tanδ1表示藉由分離介電質共振器(SPDR)進行測定的10GHz下的介電正切]。 [Here, ε 1 represents the dielectric constant at 10 GHz measured by a split dielectric resonator (split post dielectric resonator (SPDR)), and Tan δ 1 represents the dielectric constant measured by a split post dielectric resonator. (SPDR) measured dielectric tangent at 10 GHz].

關於本發明的覆金屬積層板,構成所述第二聚醯亞胺層的聚醯亞胺可為使酸酐成分與二胺成分反應而獲得的非熱塑性聚醯亞胺,且包含四羧酸殘基及二胺殘基。該情況下,相對於所述四羧酸殘基的100莫耳份,由3,3',4,4'-聯苯四羧酸二酐(3,3',4,4'-biphenyl tetracarboxylic dianhydride,BPDA)所衍生的四羧酸殘基(BPDA殘基)及由1,4-伸苯基雙(偏苯三甲酸單酯)二酐(1,4-phenylene bis(trimellitic acid monoester)dianhydride,TAHQ)所衍生的四羧酸殘基(TAHQ殘基)中的至少一種、以及由均苯四甲酸二酐(pyromellitic dianhydride,PMDA)所衍生的四羧酸殘基(PMDA殘基)及由2,3,6,7-萘四羧酸二酐(2,3,6,7-naphthalene tetracarboxylic dianhydride,NTCDA)所衍生的四羧酸殘基(NTCDA殘基)中的至少一種的合計可為80莫耳份以上,所述BPDA殘基及所述TAHQ殘基中的至少一種、與所述PMDA殘基及所述NTCDA殘基中的至少一種的莫耳比{(BPDA殘基+TAHQ殘基)/(PMDA殘基+NTCDA殘基)}可為0.4~1.5的範圍內。 Regarding the metal-clad laminate of the present invention, the polyimide constituting the second polyimide layer may be a non-thermoplastic polyimide obtained by reacting an acid anhydride component with a diamine component, and may contain tetracarboxylic acid residues. groups and diamine residues. In this case, 3,3',4,4'-biphenyltetracarboxylic dianhydride (3,3',4,4'-biphenyl tetracarboxylic dianhydride, BPDA) derived tetracarboxylic acid residues (BPDA residues) and 1,4-phenylene bis (trimellitic acid monoester) dianhydride (1,4-phenylene bis(trimellitic acid monoester) dianhydride , TAHQ) at least one of tetracarboxylic acid residues (TAHQ residues) derived from, and tetracarboxylic acid residues (PMDA residues) derived from pyromellitic dianhydride (pyromellitic dianhydride, PMDA) and derived from The total of at least one of the tetracarboxylic acid residues (NTCDA residues) derived from 2,3,6,7-naphthalene tetracarboxylic dianhydride (2,3,6,7-naphthalene tetracarboxylic dianhydride, NTCDA) may be More than 80 mole parts, the mol ratio of at least one of the BPDA residue and the TAHQ residue to at least one of the PMDA residue and the NTCDA residue {(BPDA residue+TAHQ residue Base)/(PMDA residue+NTCDA residue)} can be in the range of 0.4~1.5.

關於本發明的覆金屬積層板,相對於所有二胺成分,所 述二胺成分可含有80莫耳%以上的4,4'-二胺基-2,2'-二甲基聯苯(2,2'-dimethyl-4,4'-diamino biphenyl,m-TB)。 Regarding the metal-clad laminate of the present invention, with respect to all diamine components, all The diamine component may contain more than 80 mole % of 4,4'-diamino-2,2'-dimethylbiphenyl (2,2'-dimethyl-4,4'-diamino biphenyl, m-TB ).

本發明的覆金屬積層板中,所述樹脂積層體可具有自所述金屬層側起分別至少依次積層有所述第一聚醯亞胺層、所述第二聚醯亞胺層的結構。 In the metal-clad laminate of the present invention, the resin laminate may have a structure in which at least the first polyimide layer and the second polyimide layer are sequentially laminated from the side of the metal layer.

本發明的覆金屬積層板中,所述樹脂積層體可具有包含至少四層以上的聚醯亞胺層的積層結構。 In the metal-clad laminate of the present invention, the resin laminate may have a laminate structure including at least four or more polyimide layers.

本發明的電路基板是對所述任一覆金屬積層板的所述金屬層進行配線電路加工而成者。 The circuit board of the present invention is obtained by subjecting the metal layer of any one of the metal-clad laminates to wiring circuit processing.

本發明的覆金屬積層板具備由具有充分的厚度且具有優異的介電特性的聚醯亞胺所構成的樹脂積層體,因此可較佳地用作需要高速信號傳輸的電子材料。 The metal-clad laminate of the present invention has a resin laminate made of polyimide having a sufficient thickness and excellent dielectric properties, and thus can be suitably used as an electronic material requiring high-speed signal transmission.

10A、10B:銅箔層 10A, 10B: copper foil layer

20A、20B、40A、40B:熱塑性聚醯亞胺層 20A, 20B, 40A, 40B: thermoplastic polyimide layer

30A、30B:非熱塑性聚醯亞胺層 30A, 30B: Non-thermoplastic polyimide layer

50:樹脂積層體 50: resin laminate

60:接合面 60: joint surface

70A、70B:單面CCL 70A, 70B: single-sided CCL

100、100A:兩面CCL 100, 100A: double-sided CCL

圖1是表示本發明的一實施形態的兩面覆銅積層板(兩面覆銅板(copper-clad plate,CCL))的構成的示意剖面圖。 FIG. 1 is a schematic cross-sectional view showing the configuration of a double-sided copper-clad laminate (double-sided copper-clad plate (CCL)) according to an embodiment of the present invention.

圖2是表示兩面CCL的變形例的構成的示意剖面圖。 FIG. 2 is a schematic cross-sectional view showing the configuration of a modified example of a double-sided CCL.

圖3是說明圖1所示的兩面CCL的製造方法的一步驟的圖式。 FIG. 3 is a diagram illustrating a step of a method of manufacturing the double-sided CCL shown in FIG. 1 .

以下,適宜參照圖式對本發明的實施形態進行說明。 Hereinafter, embodiments of the present invention will be described with reference to the drawings as appropriate.

[覆金屬積層板] [Metal-clad laminate]

本實施形態的覆金屬積層板包括:含有多個聚醯亞胺層的樹脂積層體;以及積層於所述樹脂積層體的至少單面的金屬層。 The metal-clad laminate of this embodiment includes: a resin laminate including a plurality of polyimide layers; and a metal layer laminated on at least one surface of the resin laminate.

<樹脂積層體> <Resin laminate>

樹脂積層體滿足以下i)~iv)的條件。 The resin laminate satisfies the conditions of i) to iv) below.

i)樹脂積層體的整體的厚度為40μm~200μm的範圍內,較佳為40μm~180μm的範圍內,更佳為50μm~160μm的範圍內。若樹脂積層體的整體的厚度不滿40μm,則有無法獲得充分的高頻傳輸特性之虞,若超過200μm,則有時會產生翹曲等問題。另外,有於尺寸穩定性或彎曲性等方面產生問題之虞,因此樹脂積層體的整體的厚度較佳為設為180μm以下。 i) The overall thickness of the resin laminate is within the range of 40 μm to 200 μm, preferably within the range of 40 μm to 180 μm, more preferably within the range of 50 μm to 160 μm. If the overall thickness of the resin laminate is less than 40 μm, sufficient high-frequency transmission characteristics may not be obtained, and if it exceeds 200 μm, problems such as warpage may arise. In addition, there is a possibility of causing problems in terms of dimensional stability, flexibility, and the like, so the overall thickness of the resin laminate is preferably 180 μm or less.

ii)樹脂積層體至少包含與金屬層接觸的第一聚醯亞胺層、以及直接或間接地積層於第一聚醯亞胺層上的第二聚醯亞胺層。構成第一聚醯亞胺層的聚醯亞胺為熱塑性聚醯亞胺,構成第二聚醯亞胺層的聚醯亞胺為非熱塑性聚醯亞胺。樹脂積層體較佳為具有自金屬層側起分別至少依次積層有第一聚醯亞胺層、第二聚醯亞胺層的結構。再者,樹脂積層體亦可具有第一聚醯亞胺層、第二聚醯亞胺層以外的任意的樹脂層。另外,樹脂積層體較佳為以其厚度方向的中心為基準,具有與厚度方向對稱的層結構,但亦可為具有與厚度方向不對稱的層結構者。 ii) The resin laminate includes at least a first polyimide layer in contact with the metal layer, and a second polyimide layer laminated directly or indirectly on the first polyimide layer. The polyimide constituting the first polyimide layer is thermoplastic polyimide, and the polyimide constituting the second polyimide layer is non-thermoplastic polyimide. The resin laminate preferably has a structure in which at least a first polyimide layer and a second polyimide layer are sequentially laminated from the metal layer side. Furthermore, the resin laminate may have any resin layer other than the first polyimide layer and the second polyimide layer. In addition, the resin laminate preferably has a layer structure symmetrical to the thickness direction based on the center in the thickness direction, but may have a layer structure asymmetric to the thickness direction.

iii)關於樹脂積層體,第二聚醯亞胺層的厚度相對於樹脂積層體的整體的厚度的比率為70%~97%的範圍內,較佳為75% ~95%的範圍內。如下所述,第二聚醯亞胺層為具有低介電特性的非熱塑性聚醯亞胺層,因此藉由將第二聚醯亞胺層的厚度相對於樹脂積層體的整體的厚度的比率控制為所述範圍內,可製造具有優異的高頻傳輸特性的FPC等電路基板。若第二聚醯亞胺層的厚度相對於樹脂積層體的整體的厚度的比率不滿70%,則絕緣樹脂層中的非熱塑性聚醯亞胺層的比例變得過小,因此介電特性有可能受損,若超過97%,則作為第一聚醯亞胺層的熱塑性聚醯亞胺層變薄,因此樹脂積層體與金屬層的接著可靠性容易下降。 iii) Regarding the resin laminate, the ratio of the thickness of the second polyimide layer to the thickness of the entire resin laminate is in the range of 70% to 97%, preferably 75%. ~95% range. As described below, the second polyimide layer is a non-thermoplastic polyimide layer having low dielectric properties, so by calculating the ratio of the thickness of the second polyimide layer to the thickness of the entire resin laminate When controlled to be within the above range, circuit boards such as FPCs having excellent high-frequency transmission characteristics can be produced. If the ratio of the thickness of the second polyimide layer to the thickness of the entire resin laminate is less than 70%, the ratio of the non-thermoplastic polyimide layer in the insulating resin layer becomes too small, so the dielectric properties may be reduced. If the damage exceeds 97%, the thermoplastic polyimide layer as the first polyimide layer becomes thinner, so the adhesion reliability between the resin laminate and the metal layer tends to decrease.

iv)樹脂積層體基於下述數式(a):

Figure 108126128-A0305-02-0009-2
iv) The resin laminate is based on the following formula (a):
Figure 108126128-A0305-02-0009-2

[此處,ε1表示藉由分離介電質共振器(SPDR)進行測定的10GHz下的介電常數,Tanδ1表示藉由分離介電質共振器(SPDR)進行測定的10GHz下的介電正切。再者,

Figure 108126128-A0305-02-0009-6
ε1是指ε1的平方根] [Here, ε1 represents the dielectric constant at 10 GHz measured by a split dielectric resonator (SPDR), and Tanδ1 represents the dielectric constant at 10 GHz measured by a split dielectric resonator (SPDR). Tangent. Furthermore,
Figure 108126128-A0305-02-0009-6
ε1 means the square root of ε1 ]

計算出的作為表示介電特性的指標的E1值未滿0.009,較佳為可為0.0025~0.0085的範圍內,更佳為可為0.0025~0.008的範圍內。藉由E1值未滿0.009,可製造具有優異的高頻傳輸特性的FPC等電路基板。另一方面,若E1值超過所述上限,則於用於FPC等電路基板中時,於高頻信號的傳輸路徑上容易產生電信號的損失等不良情況。 The calculated E 1 value, which is an index showing the dielectric properties, is less than 0.009, preferably within a range of 0.0025 to 0.0085, more preferably within a range of 0.0025 to 0.008. When the E 1 value is less than 0.009, circuit boards such as FPC having excellent high-frequency transmission characteristics can be produced. On the other hand, if the E 1 value exceeds the above upper limit, when used in circuit boards such as FPC, defects such as loss of electrical signals are likely to occur on the transmission path of high-frequency signals.

另外,關於樹脂積層體,就抑制形成覆金屬積層板時的 翹曲或尺寸穩定性的下降的觀點而言,較佳為作為樹脂積層體的整體,將熱膨脹係數(Coefficient of Thermal Expansion,CTE)控制為10ppm/K~30ppm/K的範圍內。該情況下,於樹脂積層體中作為基底層(主層)發揮功能的第二聚醯亞胺層的CTE可為較佳為1ppm/K~25ppm/K的範圍內、更佳為10ppm/K~20ppm/K的範圍內。 In addition, with regard to the resin laminate, it is possible to suppress the From the viewpoint of warping or reduction in dimensional stability, it is preferable to control the coefficient of thermal expansion (Coefficient of Thermal Expansion, CTE) within the range of 10 ppm/K to 30 ppm/K as the entire resin laminate. In this case, the CTE of the second polyimide layer functioning as the base layer (main layer) in the resin laminate is preferably in the range of 1 ppm/K to 25 ppm/K, more preferably 10 ppm/K ~20ppm/K range.

(第一聚醯亞胺層) (first polyimide layer)

構成第一聚醯亞胺層的聚醯亞胺為熱塑性聚醯亞胺。熱塑性聚醯亞胺較佳為玻璃轉移溫度(Tg)為360℃以下,更佳為200℃~320℃的範圍內。此處,所謂熱塑性聚醯亞胺通常是可明確確認玻璃轉移溫度(Tg)的聚醯亞胺,本發明中是指使用動態黏彈性測定裝置(動態機械分析儀(Dynamic Mechanical Analysis,DMA))而測定的30℃下的儲存彈性係數為1.0×109Pa以上、300℃下的儲存彈性係數未滿3.0×108Pa的聚醯亞胺。樹脂積層體具有與一層或兩層金屬層分別鄰接的一層或兩層第一聚醯亞胺層。於具有兩個第一聚醯亞胺層的情況下,所構成的聚醯亞胺可為相同種類,亦可為不同種類。再者,關於熱塑性聚醯亞胺的詳情,將後述。 The polyimide constituting the first polyimide layer is thermoplastic polyimide. The thermoplastic polyimide preferably has a glass transition temperature (Tg) of 360°C or lower, more preferably within a range of 200°C to 320°C. Here, the so-called thermoplastic polyimide is usually a polyimide whose glass transition temperature (Tg) can be clearly confirmed, and in the present invention refers to the use of a dynamic viscoelasticity measurement device (Dynamic Mechanical Analysis (Dynamic Mechanical Analysis, DMA)) On the other hand, the polyimide has a measured storage modulus of elasticity at 30°C of 1.0×10 9 Pa or more and a storage modulus of elasticity at 300°C of less than 3.0×10 8 Pa. The resin laminate has one or two first polyimide layers adjacent to one or two metal layers, respectively. In the case of having two first polyimide layers, the polyimides formed may be the same type or different types. In addition, the details about thermoplastic polyimide will be mentioned later.

(第二聚醯亞胺層) (second polyimide layer)

構成第二聚醯亞胺層的聚醯亞胺為低熱膨脹性的非熱塑性聚醯亞胺。於具有多層第二聚醯亞胺層的情況下,構成各層的聚醯亞胺可為相同種類,亦可為不同種類。此處,所謂非熱塑性聚醯亞胺通常是即便進行加熱亦不會顯示出軟化、接著性的聚醯亞 胺,但於本發明中是指使用動態黏彈性測定裝置(DMA)而測定的30℃下的儲存彈性係數為1.0×109Pa以上、300℃下的儲存彈性係數為3.0×108Pa以上的聚醯亞胺。再者,關於非熱塑性聚醯亞胺的詳情,將後述。 The polyimide constituting the second polyimide layer is a low thermal expansion non-thermoplastic polyimide. In the case of having a plurality of layers of the second polyimide layer, the polyimides constituting each layer may be of the same type or different types. Here, the so-called non-thermoplastic polyimide is generally a polyimide that does not show softening and adhesiveness even when heated, but in the present invention refers to 30 A polyimide having a storage modulus of elasticity at 1.0×10 9 Pa or more at °C and a storage modulus of elasticity at 300°C of 3.0×10 8 Pa or more. In addition, the detail about non-thermoplastic polyimide is mentioned later.

<金屬層> <metal layer>

作為金屬層,可較佳地使用金屬箔。金屬箔的材質並無特別限制,例如可列舉:銅、不鏽鋼、鐵、鎳、鈹、鋁、鋅、銦、銀、金、錫、鋯、鉭、鈦、鉛、鎂、錳及該些的合金等。該些中,特佳為銅或銅合金。作為銅箔,可為壓延銅箔,亦可為電解銅箔。 As the metal layer, metal foil can be preferably used. The material of the metal foil is not particularly limited, for example, copper, stainless steel, iron, nickel, beryllium, aluminum, zinc, indium, silver, gold, tin, zirconium, tantalum, titanium, lead, magnesium, manganese and the like Alloy etc. Among these, copper or a copper alloy is particularly preferable. As copper foil, rolled copper foil may be used, or electrolytic copper foil may be used.

作為金屬層使用的金屬箔亦可對表面實施例如防鏽處理、板壁(siding)、鋁醇化物、鋁螯合物、矽烷偶合劑等表面處理。 The metal foil used as the metal layer may be subjected to surface treatments such as antirust treatment, siding, aluminum alcoholate, aluminum chelate, silane coupling agent, and the like.

本實施形態的覆金屬積層板中,例如用於FPC的製造時的金屬層的較佳厚度為3μm~50μm的範圍內,更佳為5μm~30μm的範圍內,為了對電路圖案的線寬進行細線化,最佳為5μm~20μm的範圍內。就抑制高頻傳輸中的導體損失的增大的觀點而言,金屬層的厚度越厚越佳,另一方面,若厚度變得過大,則有對微細化的應用變得困難,並且彎曲性下降且進行電路加工時的配線層與絕緣樹脂層的接著性受損之虞。考慮所述折衷關係,金屬層的厚度可設為所述範圍內。 In the metal-clad laminate of this embodiment, for example, the thickness of the metal layer used in the manufacture of FPC is preferably in the range of 3 μm to 50 μm, more preferably in the range of 5 μm to 30 μm, in order to adjust the line width of the circuit pattern Thinning, preferably within the range of 5 μm to 20 μm. From the viewpoint of suppressing the increase of conductor loss in high-frequency transmission, the thicker the thickness of the metal layer, the better. On the other hand, if the thickness becomes too large, the application to miniaturization becomes difficult, and the flexibility There is a risk that the adhesion between the wiring layer and the insulating resin layer will be damaged during circuit processing. Considering the trade-off relationship, the thickness of the metal layer can be set within the range described above.

另外,就使高頻傳輸特性與相對於樹脂積層體的接著性併存的觀點而言,金屬層的與第一聚醯亞胺層接觸的表面的十點 平均粗糙度(Rz)為1.2μm以下,較佳為0.05μm~1.0μm的範圍內。就同樣的觀點而言,金屬層的與第一聚醯亞胺層接觸的表面的算術平均高度(Ra)較佳為0.2μm以下。 In addition, from the standpoint of coexistence of high-frequency transmission characteristics and adhesiveness to the resin laminate, ten points of the surface of the metal layer in contact with the first polyimide layer The average roughness (Rz) is 1.2 μm or less, preferably within the range of 0.05 μm to 1.0 μm. From the same viewpoint, the arithmetic average height (Ra) of the surface of the metal layer in contact with the first polyimide layer is preferably 0.2 μm or less.

本實施形態的覆金屬積層板中,作為金屬層,可使用市售的銅箔。作為其具體例,可列舉:福田金屬箔粉工業公司製造的銅箔CF-T49A-DS-HD(商品名)、三井金屬礦業股份有限公司製造的銅箔TQ-M4-VSP(商品名)、JX金屬股份有限公司製造的銅箔GHY5-HA-V2(商品名)、該公司的BHY(X)-HA-V2(商品名)等。 In the metal-clad laminate of this embodiment, a commercially available copper foil can be used as the metal layer. Specific examples thereof include copper foil CF-T49A-DS-HD (trade name) manufactured by Fukuda Metal Foil Powder Industry Co., Ltd., copper foil TQ-M4-VSP (trade name) manufactured by Mitsui Metal Mining Co., Ltd., Copper foil GHY5-HA-V2 (trade name) manufactured by JX Metal Co., Ltd., BHY(X)-HA-V2 (trade name) of the same company, and the like.

其次,參照圖式對本實施形態的覆金屬積層板的結構進行具體說明。圖1是表示本發明的一實施形態的兩面覆銅積層板(兩面CCL)100的構成的示意剖面圖。兩面CCL100包括:作為金屬層的銅箔層10A、銅箔層10B;以及作為樹脂積層體的樹脂積層體50,具有於樹脂積層體50的兩面積層有銅箔層10A、銅箔層10B的結構。此處,樹脂積層體50由多個聚醯亞胺層構成,包括:作為第一聚醯亞胺層的熱塑性聚醯亞胺層20A、熱塑性聚醯亞胺層20B;作為第二聚醯亞胺層的非熱塑性聚醯亞胺層30A、非熱塑性聚醯亞胺層30B;以及作為第三聚醯亞胺層的熱塑性聚醯亞胺層40A、熱塑性聚醯亞胺層40B。 Next, the structure of the metal-clad laminate of this embodiment will be specifically described with reference to the drawings. FIG. 1 is a schematic cross-sectional view showing the configuration of a double-sided copper-clad laminate (double-sided CCL) 100 according to an embodiment of the present invention. The double-sided CCL 100 includes: a copper foil layer 10A and a copper foil layer 10B as metal layers; and a resin laminate 50 as a resin laminate, which has a structure in which the copper foil layer 10A and the copper foil layer 10B are laminated on both surfaces of the resin laminate 50 . Here, the resin laminate 50 is composed of a plurality of polyimide layers, including: a thermoplastic polyimide layer 20A and a thermoplastic polyimide layer 20B as the first polyimide layer; non-thermoplastic polyimide layer 30A, non-thermoplastic polyimide layer 30B of the amine layer; and thermoplastic polyimide layer 40A, thermoplastic polyimide layer 40B as the third polyimide layer.

於兩面CCL100中,熱塑性聚醯亞胺層20A、熱塑性聚醯亞胺層20B分別與銅箔層10A、銅箔層10B直接接觸。熱塑性聚醯亞胺層20A與熱塑性聚醯亞胺層20B可為相同厚度,亦可為 不同厚度,構成該些層的聚醯亞胺可為相同種類,亦可為不同種類。 In the double-sided CCL 100, the thermoplastic polyimide layer 20A and the thermoplastic polyimide layer 20B are in direct contact with the copper foil layer 10A and the copper foil layer 10B, respectively. The thermoplastic polyimide layer 20A and the thermoplastic polyimide layer 20B can have the same thickness, or can be With different thicknesses, the polyimides constituting these layers can be of the same type or different types.

另外,於兩面CCL100中,非熱塑性聚醯亞胺層30A、非熱塑性聚醯亞胺層30B可分別與熱塑性聚醯亞胺層20A、熱塑性聚醯亞胺層20B接觸,亦可不直接接觸而間接性地積層。非熱塑性聚醯亞胺層30A與非熱塑性聚醯亞胺層30B可為相同厚度,亦可為不同厚度,構成該些層的聚醯亞胺可為相同種類,亦可為不同種類。 In addition, in the double-sided CCL 100, the non-thermoplastic polyimide layer 30A and the non-thermoplastic polyimide layer 30B may be in contact with the thermoplastic polyimide layer 20A and the thermoplastic polyimide layer 20B respectively, or may be indirect without direct contact. Sexual stratum. The non-thermoplastic polyimide layer 30A and the non-thermoplastic polyimide layer 30B may have the same thickness or different thicknesses, and the polyimides constituting these layers may be the same type or different types.

另外,於兩面CCL100中,為了確保接著性,熱塑性聚醯亞胺層40A、熱塑性聚醯亞胺層40B較佳為由玻璃轉移溫度(Tg)為360℃以下、例如200℃~320℃的範圍內的熱塑性聚醯亞胺構成。熱塑性聚醯亞胺層40A、熱塑性聚醯亞胺層40B亦可為與熱塑性聚醯亞胺層20A、熱塑性聚醯亞胺層20B相同的材質。熱塑性聚醯亞胺層40A與熱塑性聚醯亞胺層40B可為相同厚度,亦可為不同厚度,構成該些層的聚醯亞胺可為相同種類,亦可為不同種類。 In addition, in the double-sided CCL 100, in order to ensure adhesion, the thermoplastic polyimide layer 40A and the thermoplastic polyimide layer 40B are preferably in the range of 360° C. or less from the glass transition temperature (Tg), for example, 200° C. to 320° C. Constructed of thermoplastic polyimide. The thermoplastic polyimide layer 40A and the thermoplastic polyimide layer 40B can also be made of the same material as the thermoplastic polyimide layer 20A and the thermoplastic polyimide layer 20B. The thermoplastic polyimide layer 40A and the thermoplastic polyimide layer 40B may have the same thickness or different thicknesses, and the polyimides constituting these layers may be the same type or different types.

樹脂積層體50並不限定於圖1所示的六層結構。樹脂積層體50只要至少包括與銅箔層10A、銅箔層10B接觸的熱塑性聚醯亞胺層20A、熱塑性聚醯亞胺層20B(第一聚醯亞胺層);以及分別直接或間接地積層於該些熱塑性聚醯亞胺層20A、熱塑性聚醯亞胺層20B上的非熱塑性聚醯亞胺層30A、非熱塑性聚醯亞胺層30B(第二聚醯亞胺層)即可。因此,於兩面CCL的情況下, 樹脂積層體50只要包含至少四層以上的聚醯亞胺層即可。例如如圖2所示的兩面CCL100A般,樹脂積層體50亦可為如下五層結構,包括:作為第一聚醯亞胺層的熱塑性聚醯亞胺層20A、熱塑性聚醯亞胺層20B;作為第二聚醯亞胺層的非熱塑性聚醯亞胺層30A、非熱塑性聚醯亞胺層30B;以及一層熱塑性聚醯亞胺層40A。另外,樹脂積層體50亦可包含圖1、圖2所示的以外的任意的層。樹脂積層體50可包含聚醯亞胺層以外的樹脂層,較佳為僅包含多個聚醯亞胺層。 The resin laminate 50 is not limited to the six-layer structure shown in FIG. 1 . As long as the resin laminate 50 includes at least the thermoplastic polyimide layer 20A and the thermoplastic polyimide layer 20B (the first polyimide layer) in contact with the copper foil layer 10A and the copper foil layer 10B; and directly or indirectly The non-thermoplastic polyimide layer 30A and the non-thermoplastic polyimide layer 30B (second polyimide layer) laminated on the thermoplastic polyimide layer 20A and the thermoplastic polyimide layer 20B may be used. Therefore, in the case of a double-sided CCL, The resin laminate 50 only needs to include at least four or more polyimide layers. For example, like the double-sided CCL100A shown in FIG. 2, the resin laminate 50 may also have the following five-layer structure, including: a thermoplastic polyimide layer 20A and a thermoplastic polyimide layer 20B as the first polyimide layer; A non-thermoplastic polyimide layer 30A as a second polyimide layer; a non-thermoplastic polyimide layer 30B; and a thermoplastic polyimide layer 40A. In addition, the resin laminate 50 may include arbitrary layers other than those shown in FIGS. 1 and 2 . The resin laminate 50 may include resin layers other than the polyimide layer, and preferably includes only a plurality of polyimide layers.

構成樹脂積層體50的聚醯亞胺層可視需要含有無機填料。具體而言,例如可列舉:二氧化矽、氧化鋁、氧化鎂、氧化鈹、氮化硼、氮化鋁、氮化矽、氟化鋁、氟化鈣等。該些可使用一種或混合兩種以上使用。 The polyimide layer constituting the resin laminate 50 may contain an inorganic filler as needed. Specifically, examples thereof include silicon dioxide, aluminum oxide, magnesium oxide, beryllium oxide, boron nitride, aluminum nitride, silicon nitride, aluminum fluoride, calcium fluoride, and the like. These may be used alone or in combination of two or more.

銅箔層10A、銅箔層10B可為厚度或材質相同的構成的銅箔,亦可為不同構成的銅箔。 The copper foil layer 10A and the copper foil layer 10B may be copper foils having the same thickness or material, or copper foils having different structures.

<覆金屬積層板的製造方法> <Manufacturing method of metal-clad laminate>

兩面CCL100較佳為例如藉由以下所示的第一方法或第二方法製造。 The double-sided CCL 100 is preferably produced, for example, by the first method or the second method shown below.

(第一方法) (first method)

首先,準備兩個單面覆銅積層板(單面CCL)。即,分別製作具有銅箔層10A、熱塑性聚醯亞胺層20A、非熱塑性聚醯亞胺層30A及熱塑性聚醯亞胺層40A的單面覆銅積層板(單面CCL)70A;以及具有銅箔層10B、熱塑性聚醯亞胺層20B、非熱塑性聚 醯亞胺層30B及熱塑性聚醯亞胺層40B的單面CCL70B。 First, prepare two single-sided copper-clad laminates (single-sided CCL). That is, a single-sided copper-clad laminate (single-sided CCL) 70A with a copper foil layer 10A, a thermoplastic polyimide layer 20A, a non-thermoplastic polyimide layer 30A, and a thermoplastic polyimide layer 40A is produced respectively; Copper foil layer 10B, thermoplastic polyimide layer 20B, non-thermoplastic polyimide One-sided CCL 70B of imide layer 30B and thermoplastic polyimide layer 40B.

其次,如圖3所示,將兩個單面CCL70A、單面CCL70B的熱塑性聚醯亞胺層40A、熱塑性聚醯亞胺層40B側相對地配置,藉由熱壓製於接合面60進行熱壓接,藉此可製造兩面CCL100。再者,接合面60為熱壓接面。兩個單面CCL70A、單面CCL70B可為完全相同的構成,亦可為層數、樹脂種、金屬層等不同者。另外,於將單面CCL70A、單面CCL70B的聚醯亞胺層設為四層以上的情況下,較佳為構成為以熱塑性聚醯亞胺層、以及與其鄰接的非熱塑性聚醯亞胺層為積層單位,該積層單位交替重覆。 Next, as shown in FIG. 3 , the thermoplastic polyimide layer 40A and the thermoplastic polyimide layer 40B sides of the two single-sided CCL70A and single-sided CCL70B are arranged facing each other, and hot pressing is performed on the bonding surface 60 by hot pressing. Then, double-sided CCL100 can be manufactured. Furthermore, the bonding surface 60 is a thermocompression bonding surface. The two single-sided CCL70A and single-sided CCL70B may have completely the same configuration, or may be different in number of layers, resin types, metal layers, and the like. In addition, when the polyimide layers of single-sided CCL70A and single-sided CCL70B are set to four or more layers, it is preferable to constitute a thermoplastic polyimide layer and a non-thermoplastic polyimide layer adjacent thereto. It is a layered unit, which repeats alternately.

就厚度或物性的控制的容易性而言,構成單面CCL70A、單面CCL70B的各聚醯亞胺層較佳為藉由所謂的流延(塗佈)法形成,所謂的流延(塗佈)法是於作為銅箔層10A、銅箔層10B的原料的銅箔上塗佈作為聚醯亞胺的前驅物的聚醯胺酸的樹脂溶液,於形成塗佈膜後,藉由熱處理進行乾燥並硬化。即,於單面CCL70A、單面CCL70B中,積層於銅箔層10A、銅箔層10B的熱塑性聚醯亞胺層20A、熱塑性聚醯亞胺層20B、非熱塑性聚醯亞胺層30A、非熱塑性聚醯亞胺層30B、熱塑性聚醯亞胺層40A、熱塑性聚醯亞胺層40B較佳為均藉由流延法依次形成。 In terms of ease of control of thickness or physical properties, each polyimide layer constituting single-sided CCL70A and single-sided CCL70B is preferably formed by a so-called casting (coating) method. ) method is to apply a resin solution of polyamic acid as a precursor of polyimide on the copper foil which is the raw material of the copper foil layer 10A and the copper foil layer 10B, and perform heat treatment after the coating film is formed. Dry and harden. That is, in single-sided CCL70A and single-sided CCL70B, thermoplastic polyimide layer 20A, thermoplastic polyimide layer 20B, non-thermoplastic polyimide layer 30A, non-thermoplastic polyimide layer laminated on copper foil layer 10A and copper foil layer 10B The thermoplastic polyimide layer 30B, the thermoplastic polyimide layer 40A, and the thermoplastic polyimide layer 40B are all preferably sequentially formed by a casting method.

於流延法中,塗佈膜可藉由於銅箔上塗佈聚醯胺酸的樹脂溶液後進行乾燥而形成。於單面CCL70A、單面CCL70B的形成中,可於聚醯胺酸溶液上依次塗佈包含不同構成成分的其他聚醯胺酸溶液而形成,另外,亦可塗佈兩次以上相同構成的聚醯胺 酸溶液。另外,亦可藉由多層擠壓,同時積層多層塗佈膜而形成。另外,亦可將聚醯胺酸的塗佈膜暫時醯亞胺化而製成單層或多層的聚醯亞胺層,然後進而於其上塗佈聚醯胺酸的樹脂溶液,進行醯亞胺化而形成聚醯亞胺層。塗佈的方法並無特別限制,例如可利用缺角輪、模具、刮刀、模唇等塗佈機進行塗佈。該情況下,銅箔可使用切片狀、輥狀的銅箔或者環形帶狀等形狀的銅箔。為了獲得生產性,有效率的是設為輥狀或者環形帶狀的形態並設為可連續生產的形式。進而,就更大地顯現電路基板中的配線圖案精度的改善效果的觀點而言,銅箔較佳為形成為長條的輥狀的銅箔。 In the casting method, the coating film can be formed by coating a resin solution of polyamic acid on a copper foil and then drying it. In the formation of single-sided CCL70A and single-sided CCL70B, it can be formed by sequentially coating other polyamic acid solutions containing different constituents on the polyamic acid solution. In addition, it is also possible to coat polyamide acid solutions of the same composition twice or more. Amide acid solution. In addition, it can also be formed by laminating a multilayer coating film at the same time by multilayer extrusion. In addition, it is also possible to temporarily imidize the coating film of polyamic acid to form a single-layer or multi-layer polyimide layer, and then further coat the resin solution of polyamic acid on it to carry out imidization. Aminated to form a polyimide layer. The method of coating is not particularly limited, for example, it can be coated by using a coating machine such as a notch wheel, a mold, a doctor blade, and a die lip. In this case, as the copper foil, copper foils in the shape of a slice, a roll, or an endless belt can be used. In order to obtain productivity, it is efficient to use a roll-like or endless belt-like form and make it into a form that can be continuously produced. Furthermore, from a viewpoint of expressing the improvement effect of the wiring pattern precision in a circuit board more, it is preferable that copper foil is formed in the shape of an elongated roll.

醯亞胺化的方法並無特別限制,例如可較佳地採用如下熱處理:於80℃~400℃的範圍內的溫度條件下進行1分鐘~60分鐘的範圍內的時間的加熱。為了抑制銅箔層10A、銅箔層10B的氧化,較佳為低氧環境下的熱處理,具體而言,較佳為於氮氣或稀有氣體等惰性氣體環境下、氫氣等還原氣體環境下、或者真空中進行。藉由熱處理,塗佈膜中的聚醯胺酸進行醯亞胺化而形成有聚醯亞胺。 The imidization method is not particularly limited. For example, the following heat treatment can be preferably adopted: heating at a temperature in the range of 80° C. to 400° C. for a time in the range of 1 minute to 60 minutes. In order to suppress the oxidation of the copper foil layer 10A and the copper foil layer 10B, heat treatment in a low-oxygen environment is preferred, specifically, an inert gas environment such as nitrogen or a rare gas, a reducing gas environment such as hydrogen, or Do it in a vacuum. By the heat treatment, the polyamic acid in the coating film is imidized to form polyimide.

以所述方式可製造具有多層聚醯亞胺層與銅箔層10A或銅箔層10B的單面CCL70A、單面CCL70B。如圖3所示,以熱塑性聚醯亞胺層40A、熱塑性聚醯亞胺層40B的表面彼此相對的方式配置以所述方式獲得的兩個單面CCL70A、單面CCL70B,於接合面60進行熱壓接,藉此可製造兩面CCL100。熱壓接較佳為 將兩個單面CCL70A、單面CCL70B形成為長條,使用一對加熱輥,以輥對輥方式進行搬運的同時加以實施,該情況下,就單面CCL的搬運性及接合性的觀點而言,更佳為於加熱輥間的搬運速度在1m/分鐘~10m/分鐘的範圍內進行。 In this manner, a single-sided CCL 70A, a single-sided CCL 70B having a multilayer polyimide layer and a copper foil layer 10A or a copper foil layer 10B can be produced. As shown in FIG. 3 , the two single-sided CCL70A and single-sided CCL70B obtained in the above manner are arranged in such a way that the surfaces of the thermoplastic polyimide layer 40A and the thermoplastic polyimide layer 40B face each other, and are carried out on the bonding surface 60. Thermocompression bonding, whereby double-sided CCL100 can be produced. Thermocompression bonding is preferably Two single-sided CCL70A and single-sided CCL70B are formed into long strips, and are carried out while being conveyed in a roll-to-roll manner using a pair of heating rollers. In other words, it is more preferable to carry out the conveyance speed between the heating rollers in the range of 1 m/min to 10 m/min.

(第二方法) (second method)

此處,列舉將藉由流延法製造金屬層為銅箔層的單面覆金屬積層板(單面CCL)或兩面覆金屬積層板(兩面CCL)100的情況作為例子。 Here, a case where a single-sided metal-clad laminate (single-sided CCL) or a double-sided metal-clad laminate (double-sided CCL) 100 in which the metal layer is a copper foil layer is produced by a tape-casting method is given as an example.

首先,準備作為銅箔層10A的銅箔(圖示省略)。而且,藉由於所述銅箔上塗佈聚醯胺酸的樹脂溶液並進行乾燥而形成第一層塗佈膜。塗佈膜為熱塑性聚醯亞胺的前驅物樹脂層。 First, a copper foil (not shown) is prepared as the copper foil layer 10A. And, the first coating film was formed by coating and drying a resin solution of polyamic acid on the copper foil. The coating film is a precursor resin layer of thermoplastic polyimide.

其次,藉由於第一層塗佈膜上進一步塗佈聚醯胺酸的樹脂溶液並進行乾燥而形成第二層塗佈膜。第二層塗佈膜為非熱塑性聚醯亞胺的前驅物樹脂層。 Next, a second coating film was formed by further coating and drying a resin solution of polyamic acid on the first coating film. The second coating film is a precursor resin layer of non-thermoplastic polyimide.

然後,於選擇聚醯胺酸的種類的同時,同樣地依次形成第三層、第四層、第五層、第六層塗佈膜,其後對該些進行熱處理,對各前驅物樹脂層的聚醯胺酸進行醯亞胺化。藉此,製作積層有多層聚醯亞胺層的單面CCL。 Then, while selecting the type of polyamic acid, the third layer, the fourth layer, the fifth layer, and the sixth layer coating film are sequentially formed in the same manner, and then these are subjected to heat treatment, and each precursor resin layer imidization of polyamic acid. In this manner, a single-sided CCL in which multiple polyimide layers were laminated was produced.

再者,亦可將單層或多層的聚醯胺酸的塗佈膜的層暫時醯亞胺化而製成單層或多層的聚醯亞胺層,然後進而於其上形成聚醯胺酸的塗佈膜。 Furthermore, it is also possible to temporarily imidize the layer of a single-layer or multi-layer polyamic acid coating film to form a single-layer or multi-layer polyimide layer, and then further form a polyamic acid layer on it. coating film.

以所述方式獲得的單面CCL具有於銅箔層10A上積層 有樹脂積層體50的結構。樹脂積層體50例如自銅箔層10A側起依次積層有熱塑性聚醯亞胺層20A、非熱塑性聚醯亞胺層30A、熱塑性聚醯亞胺層40A、熱塑性聚醯亞胺層40B、非熱塑性聚醯亞胺層30B及熱塑性聚醯亞胺層20B。 The single-sided CCL obtained in the described manner has a layered layer on the copper foil layer 10A There is a structure of a resin laminate 50 . The resin laminate 50 is, for example, sequentially laminated from the copper foil layer 10A side with a thermoplastic polyimide layer 20A, a non-thermoplastic polyimide layer 30A, a thermoplastic polyimide layer 40A, a thermoplastic polyimide layer 40B, a non-thermoplastic polyimide layer Polyimide layer 30B and thermoplastic polyimide layer 20B.

關於以兩面CCL100的製造為目的的情況,除了以上步驟以外,可進一步實施銅箔的熱壓接。 When the purpose is to manufacture the double-sided CCL 100 , thermocompression bonding of copper foil may be further performed in addition to the above steps.

於熱壓接步驟中,藉由於單面CCL中的與銅箔層10A為相反側的面(即、熱塑性聚醯亞胺層20B上)熱壓接新的銅箔(圖示省略)而積層銅箔層10B。藉此,可獲得具有圖1所示的結構的兩面CCL100。新銅箔與單面CCL的熱壓接較佳為使用一對加熱輥以輥對輥方式進行搬運的同時加以實施。 In the thermocompression bonding step, a new copper foil (not shown) is laminated by thermocompression bonding a new copper foil (not shown) on the side opposite to the copper foil layer 10A in the single-sided CCL (that is, on the thermoplastic polyimide layer 20B). Copper foil layer 10B. Thereby, the double-sided CCL 100 having the structure shown in FIG. 1 can be obtained. The thermocompression bonding of new copper foil and single-sided CCL is preferably carried out while being conveyed by a roll-to-roll system using a pair of heating rolls.

於第二方法中,利用流延法的塗佈膜的形成及醯亞胺化可與第一方法同樣地實施。 In the second method, the formation and imidization of the coating film by the casting method can be carried out in the same manner as the first method.

[聚醯亞胺] [Polyimide]

其次,關於構成樹脂積層體50的較佳的聚醯亞胺,按照非熱塑性聚醯亞胺、熱塑性聚醯亞胺的順序進行說明。 Next, preferable polyimides constituting the resin laminate 50 will be described in order of non-thermoplastic polyimide and thermoplastic polyimide.

<非熱塑性聚醯亞胺> <Non-thermoplastic polyimide>

構成第二聚醯亞胺層(非熱塑性聚醯亞胺層)的非熱塑性聚醯亞胺包含四羧酸殘基及二胺殘基。再者,本發明中,所謂四羧酸殘基表示由四羧酸二酐所衍生的四價基,所謂二胺殘基表示由二胺化合物所衍生的二價基。聚醯亞胺較佳為包含由芳香族四羧酸二酐所衍生的芳香族四羧酸殘基及由芳香族二胺所衍生的芳香 族二胺殘基。 The non-thermoplastic polyimide constituting the second polyimide layer (non-thermoplastic polyimide layer) contains tetracarboxylic acid residues and diamine residues. In addition, in this invention, a tetracarboxylic-acid residue shows the tetravalent group derived from tetracarboxylic dianhydride, and a diamine residue shows the divalent group derived from a diamine compound. The polyimide preferably comprises aromatic tetracarboxylic acid residues derived from aromatic tetracarboxylic dianhydrides and aromatic diamines derived from aromatic diamines. group of diamine residues.

(四羧酸殘基) (tetracarboxylic acid residue)

構成非熱塑性聚醯亞胺層的非熱塑性聚醯亞胺含有由3,3',4,4'-聯苯四羧酸二酐(BPDA)及1,4-伸苯基雙(偏苯三甲酸單酯)二酐(TAHQ)中的至少一種所衍生的四羧酸殘基、以及由均苯四甲酸二酐(PMDA)及2,3,6,7-萘四羧酸二酐(NTCDA)中的至少一種所衍生的四羧酸殘基作為四羧酸殘基。 The non-thermoplastic polyimide that constitutes the non-thermoplastic polyimide layer contains 3,3',4,4'-biphenyltetracarboxylic dianhydride (BPDA) and 1,4-phenylene bis(trimellitic Tetracarboxylic acid residues derived from at least one of formic acid monoester) dianhydride (TAHQ), and pyromellitic dianhydride (PMDA) and 2,3,6,7-naphthalene tetracarboxylic dianhydride (NTCDA ) at least one derived tetracarboxylic acid residue as the tetracarboxylic acid residue.

由BPDA所衍生的四羧酸殘基(以下,亦稱為「BPDA殘基」)及由TAHQ所衍生的四羧酸殘基(以下,亦稱為「TAHQ殘基」)容易形成聚合物的有序結構,可藉由抑制分子的運動而使介電正切或吸濕性下降。但是,另一方面,BPDA殘基可賦予作為聚醯亞胺前驅物的聚醯胺酸的凝膠膜的自支持性,但出現使醯亞胺化後的CTE增大且使玻璃轉移溫度降低並使耐熱性下降的傾向。 Tetracarboxylic acid residues derived from BPDA (hereinafter also referred to as "BPDA residues") and tetracarboxylic acid residues derived from TAHQ (hereinafter also referred to as "TAHQ residues") easily form polymers The ordered structure can reduce the dielectric tangent or hygroscopicity by inhibiting the movement of molecules. However, on the other hand, BPDA residues can impart self-supporting properties to the gel film of polyamic acid, which is a precursor of polyimide, but appear to increase the CTE after imidization and lower the glass transition temperature. And the tendency to reduce heat resistance.

就所述觀點而言,以構成非熱塑性聚醯亞胺層的非熱塑性聚醯亞胺相對於四羧酸殘基的100莫耳份而於合計較佳為30莫耳份以上且60莫耳份以下的範圍內、更佳為40莫耳份以上且50莫耳份以下的範圍內含有BPDA殘基及TAHQ殘基的方式進行控制。若BPDA殘基及TAHQ殘基的合計未滿30莫耳份,則聚合物的有序結構的形成變得不充分,耐吸濕性下降,或者介電正切的減少變得不充分,若超過60莫耳份,則除了CTE的增加或面內延遲(RO)的變化量的增大以外,有耐熱性下降之虞。 From this point of view, the total amount of non-thermoplastic polyimide constituting the non-thermoplastic polyimide layer is preferably 30 mole parts or more and 60 mole parts with respect to 100 mole parts of tetracarboxylic acid residues. It is controlled so that BPDA residues and TAHQ residues are contained within the range of 40 mole parts or less, more preferably 40 mole parts or more and 50 mole parts or less. If the total of BPDA residues and TAHQ residues is less than 30 mole parts, the formation of the ordered structure of the polymer becomes insufficient, the moisture absorption resistance decreases, or the reduction of the dielectric tangent becomes insufficient. If it exceeds 60 If the molar portion is used, in addition to an increase in CTE or an increase in the amount of change in in-plane retardation (RO), there is a possibility that heat resistance will decrease.

另外,由均苯四甲酸二酐所衍生的四羧酸殘基(以下,亦稱為「PMDA殘基」)及由2,3,6,7-萘四羧酸二酐所衍生的四羧酸殘基(以下,亦稱為「NTCDA殘基」)具有剛直性,因此是提高面內配向性、較低地抑制CTE且承擔面內延遲(RO)的控制、或者玻璃轉移溫度的控制的作用的殘基。另一方面,PMDA殘基由於分子量小,因此若其量變得過多,則聚合物的醯亞胺基濃度變高,極性基增加而吸濕性變大,由於分子鏈內部的水分的影響而介電正切增加。另外,NTCDA殘基出現因剛直性高的萘骨架而膜容易變脆且使彈性係數增大的傾向。 In addition, tetracarboxylic acid residues derived from pyromellitic dianhydride (hereinafter also referred to as "PMDA residues") and tetracarboxylic acid residues derived from 2,3,6,7-naphthalene tetracarboxylic dianhydride Acid residues (hereinafter, also referred to as "NTCDA residues") have rigidity, so they improve in-plane alignment, lower CTE suppression, and are responsible for controlling in-plane retardation (RO) or glass transition temperature. active residues. On the other hand, since the PMDA residue has a small molecular weight, if its amount becomes too much, the concentration of the imide group of the polymer becomes high, the polar group increases and the hygroscopicity becomes large, and due to the influence of moisture inside the molecular chain. Electric tangent increases. In addition, the NTCDA residue tends to increase the modulus of elasticity by easily making the film brittle due to the highly rigid naphthalene skeleton.

因此,構成非熱塑性聚醯亞胺層的非熱塑性聚醯亞胺相對於四羧酸殘基的100莫耳份而於合計較佳為40莫耳份以上且70莫耳份以下的範圍內、更佳為50莫耳份以上且60莫耳份以下的範圍內、進而佳為50莫耳份~55莫耳份的範圍內含有PMDA殘基及NTCDA殘基。若PMDA殘基及NTCDA殘基的合計未滿40莫耳份,則有CTE增加或者耐熱性下降之虞,若超過70莫耳份,則有聚合物的醯亞胺基濃度變高,極性基增加且低吸濕性受損,介電正切增加之虞,或者有膜變脆且膜的自支持性下降之虞。 Therefore, the total amount of non-thermoplastic polyimide constituting the non-thermoplastic polyimide layer is preferably 40 mole parts or more and 70 mole parts or less with respect to 100 mole parts of tetracarboxylic acid residues, More preferably, the PMDA residue and the NTCDA residue are contained within the range of 50 molar parts or more and 60 molar parts or less, more preferably in the range of 50 molar parts to 55 molar parts. If the total of PMDA residues and NTCDA residues is less than 40 molar parts, there is a possibility that the CTE increases or the heat resistance decreases, and if it exceeds 70 molar parts, the concentration of the imide group of the polymer becomes high, and the polar group Increase and low hygroscopicity may be impaired, the dielectric tangent may increase, or the film may become brittle and the self-supporting property of the film may decrease.

另外,BPDA殘基及TAHQ殘基中的至少一種、以及PMDA殘基及NTCDA殘基中的至少一種的合計可為相對於四羧酸殘基的100莫耳份而為80莫耳份以上,較佳為90莫耳份以上。 In addition, the total of at least one of BPDA residues and TAHQ residues, and at least one of PMDA residues and NTCDA residues may be 80 mole parts or more relative to 100 mole parts of tetracarboxylic acid residues, Preferably it is more than 90 mole parts.

另外,可將BPDA殘基及TAHQ殘基中的至少一種、與PMDA殘基及NTCDA殘基中的至少一種的莫耳比{(BPDA殘基 +TAHQ殘基)/(PMDA殘基+NTCDA殘基)}設為0.4以上且1.5以下的範圍內、較佳為0.6以上且1.3以下的範圍內、更佳為0.8以上且1.2以下的範圍內,控制CTE與聚合物的有序結構的形成。 In addition, the molar ratio of at least one of BPDA residues and TAHQ residues to at least one of PMDA residues and NTCDA residues {(BPDA residues +TAHQ residue)/(PMDA residue+NTCDA residue)} is set within the range of 0.4 to 1.5, preferably 0.6 to 1.3, more preferably 0.8 to 1.2 , to control the formation of ordered structures of CTE and polymers.

PMDA及NTCDA具有剛直骨架,因此與其他一般的酸酐成分相比,可控制聚醯亞胺中的分子的面內配向性,具有熱膨脹係數(CTE)的抑制與玻璃轉移溫度(Tg)的提高效果。另外,與PMDA相比,BPDA及TAHQ的分子量大,因此由於裝入比率的增加醯亞胺基濃度下降,藉此對於介電正切的下降或吸濕率的下降具有效果。另一方面,若BPDA及TAHQ的裝入比率增加,則聚醯亞胺中的分子的面內配向性下降,而導致CTE的增加。進而,分子內的有序結構的形成得到推進,霧度值增加。就所述觀點而言,PMDA及NTCDA的合計裝入量相對於原料的所有酸酐成分的100莫耳份,可為40莫耳份~70莫耳份的範圍內、較佳為50莫耳份~60莫耳份的範圍內、更佳為50莫耳份~55莫耳份的範圍內。若相對於原料的所有酸酐成分的100莫耳份,PMDA及NTCDA的合計裝入量未滿40莫耳份,則分子的面內配向性下降,且低CTE化變得困難,另外Tg的下降所引起的加熱時的膜的耐熱性或尺寸穩定性下降。另一方面,若PMDA及NTCDA的合計裝入量超過70莫耳份,則出現因醯亞胺基濃度的增加而吸濕率變差,或者使彈性係數增大的傾向。 PMDA and NTCDA have a rigid skeleton, so compared with other general anhydride components, they can control the in-plane alignment of molecules in polyimide, and have the effect of suppressing the coefficient of thermal expansion (CTE) and improving the glass transition temperature (Tg) . In addition, since BPDA and TAHQ have larger molecular weights than PMDA, the concentration of imide groups decreases due to an increase in the loading ratio, which is effective in reducing the dielectric tangent or the moisture absorption rate. On the other hand, when the loading ratio of BPDA and TAHQ increases, the in-plane alignment of molecules in polyimide decreases, leading to an increase in CTE. Furthermore, the formation of an ordered structure in the molecule is promoted, and the haze value increases. From this point of view, the total charged amount of PMDA and NTCDA can be within the range of 40 mole parts to 70 mole parts, preferably 50 mole parts relative to 100 mole parts of all acid anhydride components of the raw material. ~60 molar parts, more preferably 50 ~55 molar parts. If the total loading amount of PMDA and NTCDA is less than 40 mole parts with respect to 100 mole parts of all the acid anhydride components of the raw material, the in-plane alignment of the molecules will decrease, and it will be difficult to achieve a low CTE, and the Tg will also decrease. The resulting heat resistance or dimensional stability of the film during heating decreases. On the other hand, if the total loading amount of PMDA and NTCDA exceeds 70 molar parts, the moisture absorption rate will deteriorate due to the increase of the imide group concentration, or the modulus of elasticity will tend to increase.

另外,BPDA及TAHQ對分子運動的抑制或醯亞胺基濃度的下降所引起的低介電正切化、吸濕率下降具有效果,但會使 作為醯亞胺化後的聚醯亞胺膜的CTE增大。就所述觀點而言,BPDA及TAHQ的合計裝入量相對於原料的所有酸酐成分的100莫耳份,可為30莫耳份~60莫耳份的範圍內、較佳為40莫耳份~50莫耳份的範圍內、更佳為40莫耳份~45莫耳份的範圍內。 In addition, BPDA and TAHQ have an effect on the inhibition of molecular motion or the reduction of the dielectric tangent and the decrease of the moisture absorption rate caused by the decrease of the imide group concentration, but they will cause The CTE of the imidized polyimide film increases. From this point of view, the total charged amount of BPDA and TAHQ may be within the range of 30 mole parts to 60 mole parts, preferably 40 mole parts relative to 100 mole parts of all acid anhydride components of the raw material. ~50 molar parts, more preferably 40 ~45 molar parts.

作為構成非熱塑性聚醯亞胺層的非熱塑性聚醯亞胺中所含的所述BPDA殘基、TAHQ殘基、PMDA殘基、NTCDA殘基以外的四羧酸殘基,例如可列舉由3,3',4,4'-二苯基碸四羧酸二酐、4,4'-氧基二鄰苯二甲酸酐、2,3',3,4'-聯苯四羧酸二酐、2,2',3,3'-二苯甲酮四羧酸二酐、2,3,3',4'-二苯甲酮四羧酸二酐或3,3',4,4'-二苯甲酮四羧酸二酐、2,3',3,4'-二苯基醚四羧酸二酐、雙(2,3-二羧基苯基)醚二酐、3,3",4,4"-對三聯苯四羧酸二酐、2,3,3",4"-對三聯苯四羧酸二酐或2,2",3,3"-對三聯苯四羧酸二酐、2,2-雙(2,3-二羧基苯基)-丙烷二酐或2,2-雙(3,4-二羧基苯基)-丙烷二酐、雙(2,3-二羧基苯基)甲烷二酐或雙(3,4-二羧基苯基)甲烷二酐、雙(2,3-二羧基苯基)碸二酐或雙(3,4-二羧基苯基)碸二酐、1,1-雙(2,3-二羧基苯基)乙烷二酐或1,1-雙(3,4-二羧基苯基)乙烷二酐、1,2,7,8-菲-四羧酸二酐、1,2,6,7-菲-四羧酸二酐或1,2,9,10-菲-四羧酸二酐、2,3,6,7-蒽四羧酸二酐、2,2-雙(3,4-二羧基苯基)四氟丙烷二酐、2,3,5,6-環己烷二酐、1,2,5,6-萘四羧酸二酐、1,4,5,8-萘四羧酸二酐、4,8-二甲基-1,2,3,5,6,7-六氫萘-1,2,5,6-四羧酸二酐、2,6-二氯萘-1,4,5,8-四羧酸二酐或2,7-二氯萘-1,4,5,8-四羧酸二酐、2,3,6,7-(或1,4,5,8-)四氯萘-1,4,5,8-(或2,3,6,7-)四羧酸二酐、2,3,8,9-苝-四羧酸二酐、 3,4,9,10-苝-四羧酸二酐、4,5,10,11-苝-四羧酸二酐或5,6,11,12-苝-四羧酸二酐、環戊烷-1,2,3,4-四羧酸二酐、吡嗪-2,3,5,6-四羧酸二酐、吡咯啶-2,3,4,5-四羧酸二酐、噻吩-2,3,4,5-四羧酸二酐、4,4'-雙(2,3-二羧基苯氧基)二苯基甲烷二酐、乙二醇雙偏苯三酸酐等芳香族四羧酸二酐所衍生的四羧酸殘基。 As tetracarboxylic acid residues other than the BPDA residue, TAHQ residue, PMDA residue, and NTCDA residue contained in the non-thermoplastic polyimide constituting the non-thermoplastic polyimide layer, for example, 3 ,3',4,4'-Diphenyltetracarboxylic dianhydride, 4,4'-oxydiphthalic anhydride, 2,3',3,4'-biphenyltetracarboxylic dianhydride , 2,2',3,3'-benzophenone tetracarboxylic dianhydride, 2,3,3',4'-benzophenone tetracarboxylic dianhydride or 3,3',4,4' -Benzophenone tetracarboxylic dianhydride, 2,3',3,4'-diphenyl ether tetracarboxylic dianhydride, bis(2,3-dicarboxyphenyl)ether dianhydride, 3,3" ,4,4"-terphenyltetracarboxylic dianhydride, 2,3,3",4"-terphenyltetracarboxylic dianhydride or 2,2",3,3"-terphenyltetracarboxylic dianhydride Dianhydride, 2,2-bis(2,3-dicarboxyphenyl)-propane dianhydride or 2,2-bis(3,4-dicarboxyphenyl)-propane dianhydride, bis(2,3-di Carboxyphenyl)methane dianhydride or bis(3,4-dicarboxyphenyl)methane dianhydride, bis(2,3-dicarboxyphenyl)pyridine dianhydride or bis(3,4-dicarboxyphenyl)pyridine Dianhydride, 1,1-bis(2,3-dicarboxyphenyl)ethanedianhydride or 1,1-bis(3,4-dicarboxyphenyl)ethanedianhydride, 1,2,7,8 -Phenanthrene-tetracarboxylic dianhydride, 1,2,6,7-phenanthrene-tetracarboxylic dianhydride or 1,2,9,10-phenanthrene-tetracarboxylic dianhydride, 2,3,6,7-anthracene Tetracarboxylic dianhydride, 2,2-bis(3,4-dicarboxyphenyl)tetrafluoropropane dianhydride, 2,3,5,6-cyclohexane dianhydride, 1,2,5,6-naphthalene Tetracarboxylic dianhydride, 1,4,5,8-naphthalene tetracarboxylic dianhydride, 4,8-dimethyl-1,2,3,5,6,7-hexahydronaphthalene-1,2,5 ,6-tetracarboxylic dianhydride, 2,6-dichloronaphthalene-1,4,5,8-tetracarboxylic dianhydride or 2,7-dichloronaphthalene-1,4,5,8-tetracarboxylic acid Dianhydride, 2,3,6,7-(or 1,4,5,8-)tetrachloronaphthalene-1,4,5,8-(or 2,3,6,7-)tetracarboxylic dianhydride , 2,3,8,9-perylene-tetracarboxylic dianhydride, 3,4,9,10-perylene-tetracarboxylic dianhydride, 4,5,10,11-perylene-tetracarboxylic dianhydride or 5,6,11,12-perylene-tetracarboxylic dianhydride, cyclopenta Alkane-1,2,3,4-tetracarboxylic dianhydride, pyrazine-2,3,5,6-tetracarboxylic dianhydride, pyrrolidine-2,3,4,5-tetracarboxylic dianhydride, Aromatic tetracarboxylic acid such as thiophene-2,3,4,5-tetracarboxylic dianhydride, 4,4'-bis(2,3-dicarboxyphenoxy)diphenylmethane dianhydride, ethylene glycol bis-trimellitic anhydride, etc. Tetracarboxylic acid residues derived from acid dianhydrides.

(二胺殘基) (diamine residue)

作為構成非熱塑性聚醯亞胺層的非熱塑性聚醯亞胺中所含的二胺殘基,較佳為由通式(A1)所表示的二胺化合物所衍生的二胺殘基。 As a diamine residue contained in the non-thermoplastic polyimide which comprises a non-thermoplastic polyimide layer, the diamine residue derived from the diamine compound represented by General formula (A1) is preferable.

Figure 108126128-A0305-02-0023-3
Figure 108126128-A0305-02-0023-3

式(A1)中,連結基X表示單鍵或選自-COO-中的二價基,Y獨立地表示氫、碳數1~3的一價烴基或烷氧基,n表示0~2的整數,p及q獨立地表示0~4的整數。此處,所謂「獨立地」表示所述式(A1)中多個取代基Y、進而整數p、q可相同亦可不同。再者,所述式(A1)中,末端的兩個胺基中的氫原子可經取代,例如亦可為-NR3R4(此處,R3、R4獨立地表示烷基等任 意的取代基)。 In the formula (A1), the linking group X represents a single bond or a divalent group selected from -COO-, Y independently represents hydrogen, a monovalent hydrocarbon group or an alkoxy group with 1 to 3 carbons, and n represents 0 to 2 Integer, p and q independently represent the integer of 0-4. Here, "independently" means that a plurality of substituents Y in the formula (A1), and the integers p and q may be the same or different. Furthermore, in the formula (A1), the hydrogen atoms in the two terminal amine groups may be substituted, for example, -NR 3 R 4 (here, R 3 and R 4 independently represent any arbitrary group such as an alkyl group. substituents).

通式(A1)所表示的二胺化合物(以下,有時表述為「二胺(A1)」)是具有至少一個苯環的芳香族二胺。二胺(A1)具有剛直結構,故具有對聚合物整體賦予有序結構的作用。因此,可獲得透氣性低、低吸濕性的聚醯亞胺,可減少分子鏈內部的水分,故可降低介電正切。此處,作為連結基X,較佳為單鍵。 The diamine compound represented by the general formula (A1) (hereinafter, may be referred to as "diamine (A1)") is an aromatic diamine having at least one benzene ring. Since diamine (A1) has a rigid structure, it has the effect of imparting an ordered structure to the whole polymer. Therefore, polyimide with low gas permeability and low hygroscopicity can be obtained, and the moisture inside the molecular chain can be reduced, so the dielectric tangent can be reduced. Here, the linking group X is preferably a single bond.

作為二胺(A1),例如可列舉:1,4-二胺基苯(對苯二胺(p-phenylenediamine,p-PDA))、2,2'-二甲基-4,4'-二胺基聯苯(m-TB)、2,2'-正丙基-4,4'-二胺基聯苯(2,2'-n-propyl-4,4'-diamino biphenyl,m-NPB)、4-胺基苯基-4'-胺基苯甲酸酯(4-amino phenyl-4'-amino benzoate,APAB)等。該些中,最佳為藉由剛直結構對聚合物整體賦予有序結構的效果大的2,2'-二甲基-4,4'-二胺基聯苯(m-TB)。 Examples of the diamine (A1) include 1,4-diaminobenzene (p-phenylenediamine (p-PDA)), 2,2'-dimethyl-4,4'-di Aminobiphenyl (m-TB), 2,2'-n-propyl-4,4'-diaminobiphenyl (2,2'-n-propyl-4,4'-diamino biphenyl, m-NPB ), 4-aminophenyl-4'-aminobenzoate (4-aminophenyl-4'-amino benzoate, APAB), etc. Among these, 2,2'-dimethyl-4,4'-diaminobiphenyl (m-TB) which has a large effect of imparting an ordered structure to the whole polymer by a rigid structure is most suitable.

構成非熱塑性聚醯亞胺層的非熱塑性聚醯亞胺可相對於二胺殘基的100莫耳份而含有較佳為80莫耳份以上、更佳為85莫耳份以上由二胺(A1)所衍生的二胺殘基。以所述範圍內的量來使用二胺(A1),藉此利用源自單體的剛直結構而容易對聚合物整體形成有序結構,容易獲得透氣性低、低吸濕性且低介電正切的非熱塑性聚醯亞胺。 The non-thermoplastic polyimide constituting the non-thermoplastic polyimide layer may contain preferably 80 mole parts or more, more preferably 85 mole parts or more, of diamine ( A1) Derivatized diamine residues. By using the diamine (A1) in an amount within the above range, it is easy to form an ordered structure for the entire polymer by utilizing the rigid structure derived from the monomer, and it is easy to obtain low air permeability, low hygroscopicity and low dielectric strength. Tangential non-thermoplastic polyimide.

另外,於相對於非熱塑性聚醯亞胺中的二胺殘基的100莫耳份,由二胺(A1)所衍生的二胺殘基為80莫耳份以上且85莫耳份以下的範圍內的情況下,就為更剛直、面內配向性優異的 結構的觀點而言,作為二胺(A1),較佳為使用1,4-二胺基苯。 In addition, the diamine residue derived from diamine (A1) is in the range of 80 mole parts or more and 85 mole parts or less with respect to 100 mole parts of the diamine residue in the non-thermoplastic polyimide In the case of , it is more rigid and has excellent in-plane alignment From a structural viewpoint, it is preferable to use 1, 4- diaminobenzene as diamine (A1).

作為構成非熱塑性聚醯亞胺層的非熱塑性聚醯亞胺中所含的其他二胺殘基,例如可列舉由2,2-雙-[4-(3-胺基苯氧基)苯基]丙烷、雙[4-(3-胺基苯氧基)苯基]碸、雙[4-(3-胺基苯氧基)]聯苯、雙[1-(3-胺基苯氧基)]聯苯、雙[4-(3-胺基苯氧基)苯基]甲烷、雙[4-(3-胺基苯氧基)苯基]醚、雙[4-(3-胺基苯氧基)]二苯甲酮、9,9-雙[4-(3-胺基苯氧基)苯基]芴、2,2-雙-[4-(4-胺基苯氧基)苯基]六氟丙烷、2,2-雙-[4-(3-胺基苯氧基)苯基]六氟丙烷、3,3'-二甲基-4,4'-二胺基聯苯、4,4'-亞甲基二鄰甲苯胺、4,4'-亞甲基二-2,6-二甲苯胺、4,4'-亞甲基-2,6-二乙基苯胺、3,3'-二胺基二苯基乙烷、3,3'-二胺基聯苯、3,3'-二甲氧基聯苯胺、3,3"-二胺基對三聯苯、4,4'-[1,4-伸苯基雙(1-甲基亞乙基)]雙苯胺、4,4'-[1,3-伸苯基雙(1-甲基亞乙基)]雙苯胺、雙(對胺基環己基)甲烷、雙(對-β-胺基第三丁基苯基)醚、雙(對-β-甲基-δ-胺基戊基)苯、對雙(2-甲基-4-胺基戊基)苯、對-雙(1,1-二甲基-5-胺基戊基)苯、1,5-二胺基萘、2,6-二胺基萘、2,4-雙(β-胺基第三丁基)甲苯、2,4-二胺基甲苯、間二甲苯-2,5-二胺、對二甲苯-2,5-二胺、間二甲苯二胺、對二甲苯二胺、2,6-二胺基吡啶、2,5-二胺基吡啶、2,5-二胺基-1,3,4-噁二唑、哌嗪、2'-甲氧基-4,4'-二胺基苯甲醯苯胺、4,4'-二胺基苯甲醯苯胺、1,3-雙[2-(4-胺基苯基)-2-丙基]苯、6-胺基-2-(4-胺基苯氧基)苯並噁唑等芳香族二胺化合物所衍生的二胺殘基、由二聚酸的兩個末端羧酸基經取代為一級胺基甲基或胺基的二聚酸型二胺等脂肪族二胺化合物所 衍生的二胺殘基。 Examples of other diamine residues contained in the non-thermoplastic polyimide layer constituting the non-thermoplastic polyimide layer include 2,2-bis-[4-(3-aminophenoxy)phenyl ]propane, bis[4-(3-aminophenoxy)phenyl]pyridine, bis[4-(3-aminophenoxy)]biphenyl, bis[1-(3-aminophenoxy) )]biphenyl, bis[4-(3-aminophenoxy)phenyl]methane, bis[4-(3-aminophenoxy)phenyl]ether, bis[4-(3-aminophenoxy) Phenoxy)]benzophenone, 9,9-bis[4-(3-aminophenoxy)phenyl]fluorene, 2,2-bis-[4-(4-aminophenoxy) Phenyl]hexafluoropropane, 2,2-bis-[4-(3-aminophenoxy)phenyl]hexafluoropropane, 3,3'-dimethyl-4,4'-diaminobis Benzene, 4,4'-methylenedi-o-toluidine, 4,4'-methylenebis-2,6-xylaniline, 4,4'-methylene-2,6-diethylaniline , 3,3'-diaminodiphenylethane, 3,3'-diaminobiphenyl, 3,3'-dimethoxybenzidine, 3,3"-diamino-p-terphenyl, 4,4'-[1,4-Phenylbis(1-methylethylene)]bisaniline, 4,4'-[1,3-Phenylbis(1-methylethylene) ] Dianiline, bis(p-aminocyclohexyl)methane, bis(p-β-aminotert-butylphenyl)ether, bis(p-β-methyl-δ-aminopentyl)benzene, p- Bis(2-methyl-4-aminopentyl)benzene, p-bis(1,1-dimethyl-5-aminopentyl)benzene, 1,5-diaminonaphthalene, 2,6- Diaminonaphthalene, 2,4-bis(β-aminotert-butyl)toluene, 2,4-diaminotoluene, m-xylene-2,5-diamine, p-xylene-2,5- Diamine, m-xylylenediamine, p-xylylenediamine, 2,6-diaminopyridine, 2,5-diaminopyridine, 2,5-diamino-1,3,4-oxadiazole , piperazine, 2'-methoxy-4,4'-diaminobenzamide, 4,4'-diaminobenzamide, 1,3-bis[2-(4-amino Diamine residues derived from aromatic diamine compounds such as phenyl)-2-propyl]benzene, 6-amino-2-(4-aminophenoxy)benzoxazole, and dimer acid The two terminal carboxylic acid groups are replaced by aliphatic diamine compounds such as dimer acid diamines with primary aminomethyl groups or amino groups. Derivatized diamine residues.

非熱塑性聚醯亞胺中,藉由選定所述四羧酸殘基及二胺殘基的種類、或者應用兩種以上的四羧酸殘基或二胺殘基時各自的莫耳比,可控制熱膨脹係數、儲存彈性係數、拉伸彈性係數等。另外,非熱塑性聚醯亞胺中,於具有多個聚醯亞胺的結構單元的情況下,可以嵌段的形式存在,亦可無規存在,但就抑制面內延遲(RO)的偏差的觀點而言,較佳為無規存在。 In the non-thermoplastic polyimide, by selecting the kinds of the tetracarboxylic acid residues and diamine residues, or the respective molar ratios when two or more kinds of tetracarboxylic acid residues or diamine residues are used, it is possible to Control thermal expansion coefficient, storage elastic coefficient, tensile elastic coefficient, etc. In addition, in the case of non-thermoplastic polyimide, in the case of having a plurality of structural units of polyimide, it may exist in the form of a block or randomly, but in order to suppress the deviation of the in-plane retardation (RO) From a viewpoint, random existence is preferable.

再者,藉由將非熱塑性聚醯亞胺中所含的四羧酸殘基及二胺殘基均設為芳香族基,可提高聚醯亞胺膜於高溫環境下的尺寸精度,且減少面內延遲(RO)的變化量,因此較佳。 Furthermore, by setting the tetracarboxylic acid residues and diamine residues contained in the non-thermoplastic polyimide as aromatic groups, the dimensional accuracy of the polyimide film in a high temperature environment can be improved, and the The variation in in-plane retardation (RO) is therefore preferred.

非熱塑性聚醯亞胺的醯亞胺基濃度較佳為33重量%以下。此處,「醯亞胺基濃度」表示聚醯亞胺中的醯亞胺基部(-(CO)2-N-)的分子量除以聚醯亞胺的結構整體的分子量而得的值。若醯亞胺基濃度超過33重量%,則樹脂自身的分子量減小,且因極性基的增加而低吸濕性亦變差。藉由選擇所述酸酐與二胺化合物的組合而控制非熱塑性聚醯亞胺中的分子的配向性,藉此抑制伴隨醯亞胺基濃度下降的CTE的增加,確保低吸濕性。 The imide group concentration of the non-thermoplastic polyimide is preferably 33% by weight or less. Here, the "imide group concentration" means a value obtained by dividing the molecular weight of the imide group (-(CO) 2 -N-) in the polyimide by the molecular weight of the entire structure of the polyimide. If the imide group concentration exceeds 33% by weight, the molecular weight of the resin itself decreases, and the low hygroscopicity also deteriorates due to the increase of polar groups. The alignment of molecules in the non-thermoplastic polyimide is controlled by selecting the combination of the acid anhydride and the diamine compound, thereby suppressing an increase in CTE accompanying a decrease in the concentration of imide groups and ensuring low hygroscopicity.

非熱塑性聚醯亞胺的重量平均分子量例如較佳為10,000~400,000的範圍內,更佳為50,000~350,000的範圍內。若重量平均分子量未滿10,000,則出現膜的強度下降而容易變脆的傾向。另一方面,若重量平均分子量超過400,000,則出現黏度過度增加且塗敷作業時容易發生膜厚度不均、條紋等不良情況的 傾向。 The weight average molecular weight of the non-thermoplastic polyimide is, for example, preferably within a range of 10,000 to 400,000, more preferably within a range of 50,000 to 350,000. When the weight average molecular weight is less than 10,000, the strength of the film tends to decrease and tend to become brittle. On the other hand, if the weight-average molecular weight exceeds 400,000, the viscosity will increase excessively, and problems such as uneven film thickness and streaks will easily occur during coating operations. tendency.

<熱塑性聚醯亞胺> <Thermoplastic polyimide>

構成第一聚醯亞胺層(熱塑性聚醯亞胺層)的熱塑性聚醯亞胺包含四羧酸殘基及二胺殘基,較佳為包含由芳香族四羧酸二酐所衍生的芳香族四羧酸殘基及由芳香族二胺所衍生的芳香族二胺殘基。 The thermoplastic polyimide constituting the first polyimide layer (thermoplastic polyimide layer) contains tetracarboxylic acid residues and diamine residues, and preferably contains aromatic tetracarboxylic acid dianhydrides derived from aromatic tetracarboxylic acid dianhydrides. Aromatic tetracarboxylic acid residues and aromatic diamine residues derived from aromatic diamines.

(四羧酸殘基) (tetracarboxylic acid residue)

作為構成熱塑性聚醯亞胺層的熱塑性聚醯亞胺中使用的四羧酸殘基,可使用與所述作為構成非熱塑性聚醯亞胺層的非熱塑性聚醯亞胺中的四羧酸殘基而例示者相同者。 As the tetracarboxylic acid residue used in the thermoplastic polyimide constituting the thermoplastic polyimide layer, the same as the tetracarboxylic acid residue in the non-thermoplastic polyimide constituting the non-thermoplastic polyimide layer can be used. The bases are the same as those exemplified.

(二胺殘基) (diamine residue)

作為構成熱塑性聚醯亞胺層的熱塑性聚醯亞胺中所含的二胺殘基,較佳為由通式(B1)~通式(B7)所表示的二胺化合物所衍生的二胺殘基。 The diamine residue contained in the thermoplastic polyimide constituting the thermoplastic polyimide layer is preferably a diamine residue derived from a diamine compound represented by general formula (B1) to general formula (B7). base.

[化2]

Figure 108126128-A0305-02-0028-4
[Chem 2]
Figure 108126128-A0305-02-0028-4

式(B1)~式(B7)中,R1獨立地表示碳數1~6的一價烴基或烷氧基,連結基A獨立地表示選自-O-、-S-、-CO-、-SO-、-SO2-、-COO-、-CH2-、-C(CH3)2-、-NH-或-CONH-中的二價基,n1獨立地表示0~4的整數。其中,自式(B3)中去除與式(B2)重複者,自式(B5)中去除與式(B4)重複者。此處,所謂「獨 立地」表示所述式(B1)~式(B7)內的一個式或兩個以上式中多個連結基A、多個R1或多個n1可相同亦可不同。再者,所述式(B1)~式(B7)中,末端的兩個胺基中的氫原子可經取代,例如亦可為-NR3R4(此處,R3、R4獨立地表示烷基等任意的取代基)。 In the formula (B1) ~ formula (B7), R 1 independently represents a monovalent hydrocarbon group or alkoxy group with 1 to 6 carbons, and the linking group A independently represents a group selected from -O-, -S-, -CO-, A divalent group in -SO-, -SO 2 -, -COO-, -CH 2 -, -C(CH 3 ) 2 -, -NH- or -CONH-, n 1 independently represents an integer of 0~4 . Among them, the duplicates of formula (B2) are removed from formula (B3), and the duplicates of formula (B4) are removed from formula (B5). Here, the so-called "independently" means that in one formula or two or more formulas in the formula (B1) ~ formula (B7), multiple linking groups A, multiple R 1 or multiple n 1 may be the same or different . Furthermore, in the formulas (B1) to (B7), the hydrogen atoms in the two terminal amine groups may be substituted, for example, -NR 3 R 4 (here, R 3 and R 4 are independently represents an arbitrary substituent such as an alkyl group).

式(B1)所表示的二胺(以下,有時表述為「二胺(B1)」)是具有兩個苯環的芳香族二胺。認為所述二胺(B1)藉由直接鍵結於至少一個苯環上的胺基與二價連結基A處於間位,聚醯亞胺分子鏈所具有的自由度增加且具有高彎曲性,有助於聚醯亞胺分子鏈的柔軟性的提高。因此,藉由使用二胺(B1),聚醯亞胺的熱塑性提高。此處,作為連結基A,較佳為-O-、-CH2-、-C(CH3)2-、-CO-、-SO2-、-S-。 Diamine represented by formula (B1) (hereinafter, may be described as "diamine (B1)") is an aromatic diamine having two benzene rings. It is considered that the diamine (B1) is in the meta-position between the amine group directly bonded to at least one benzene ring and the divalent linking group A, and the polyimide molecular chain has increased degrees of freedom and high flexibility, Contributes to the improvement of the flexibility of the polyimide molecular chain. Therefore, the thermoplasticity of polyimide improves by using diamine (B1). Here, the linking group A is preferably -O-, -CH 2 -, -C(CH 3 ) 2 -, -CO-, -SO 2 -, -S-.

作為二胺(B1),例如可列舉:3,3'-二胺基二苯基甲烷、3,3'-二胺基二苯基丙烷、3,3'-二胺基二苯基硫醚、3,3'-二胺基二苯基碸、3,3'-二胺基二苯基醚、3,4'-二胺基二苯基醚、3,4'-二胺基二苯基甲烷、3,4'-二胺基二苯基丙烷、3,4'-二胺基二苯基硫醚、3,3'-二胺基二苯甲酮、(3,3'-雙胺基)二苯基胺等。 Examples of the diamine (B1) include: 3,3'-diaminodiphenylmethane, 3,3'-diaminodiphenylpropane, 3,3'-diaminodiphenylsulfide , 3,3'-diaminodiphenyl ether, 3,3'-diaminodiphenyl ether, 3,4'-diaminodiphenyl ether, 3,4'-diaminodiphenyl methyl methane, 3,4'-diaminodiphenylpropane, 3,4'-diaminodiphenylsulfide, 3,3'-diaminobenzophenone, (3,3'-bis Amino) diphenylamine, etc.

式(B2)所表示的二胺(以下,有時表述為「二胺(B2)」)是具有三個苯環的芳香族二胺。認為所述二胺(B2)藉由直接鍵結於至少一個苯環上的胺基與二價連結基A處於間位,聚醯亞胺分子鏈所具有的自由度增加且具有高彎曲性,有助於聚醯亞胺分子鏈的柔軟性的提高。因此,藉由使用二胺(B2),聚醯亞胺的熱塑性提高。此處,作為連結基A,較佳為-O-。 Diamine represented by formula (B2) (hereinafter, may be described as "diamine (B2)") is an aromatic diamine having three benzene rings. It is considered that the diamine (B2) is in the meta-position between the amine group directly bonded to at least one benzene ring and the divalent linking group A, and the polyimide molecular chain has increased degrees of freedom and high flexibility, Contributes to the improvement of the flexibility of the polyimide molecular chain. Therefore, the thermoplasticity of polyimide improves by using diamine (B2). Here, the linking group A is preferably -O-.

作為二胺(B2),例如可列舉:1,4-雙(3-胺基苯氧基)苯、3-[4-(4-胺基苯氧基)苯氧基]苯胺、3-[3-(4-胺基苯氧基)苯氧基]苯胺等。 Examples of the diamine (B2) include: 1,4-bis(3-aminophenoxy)benzene, 3-[4-(4-aminophenoxy)phenoxy]aniline, 3-[ 3-(4-Aminophenoxy)phenoxy]aniline, etc.

式(B3)所表示的二胺(以下,有時表述為「二胺(B3)」)是具有三個苯環的芳香族二胺。認為所述二胺(B3)藉由直接鍵結於一個苯環上的兩個二價連結基A彼此處於間位,聚醯亞胺分子鏈所具有的自由度增加且具有高彎曲性,有助於聚醯亞胺分子鏈的柔軟性的提高。因此,藉由使用二胺(B3),聚醯亞胺的熱塑性提高。此處,作為連結基A,較佳為-O-。 Diamine represented by formula (B3) (hereinafter, may be described as "diamine (B3)") is an aromatic diamine having three benzene rings. It is considered that the diamine (B3) is in the meta-position to each other through two divalent linking groups A directly bonded to a benzene ring, and the polyimide molecular chain has increased degrees of freedom and high flexibility. Contributes to the improvement of the flexibility of the polyimide molecular chain. Therefore, by using diamine (B3), the thermoplasticity of polyimide improves. Here, the linking group A is preferably -O-.

作為二胺(B3),例如可列舉:1,3-雙(4-胺基苯氧基)苯(1,3-Bis(4-aminophenoxy)benzene,TPE-R)、1,3-雙(3-胺基苯氧基)苯(1,3-Bis(3-aminophenoxy)benzene,APB)、4,4'-[2-甲基-(1,3-伸苯基)雙氧基]雙苯胺、4,4'-[4-甲基-(1,3-伸苯基)雙氧基]雙苯胺、4,4'-[5-甲基-(1,3-伸苯基)雙氧基]雙苯胺等。 Examples of the diamine (B3) include: 1,3-bis(4-aminophenoxy)benzene (1,3-Bis(4-aminophenoxy)benzene, TPE-R), 1,3-bis( 3-aminophenoxy)benzene (1,3-Bis(3-aminophenoxy)benzene, APB), 4,4'-[2-methyl-(1,3-phenylene)dioxy]bis Aniline, 4,4'-[4-methyl-(1,3-phenylene)dioxy]bisaniline, 4,4'-[5-methyl-(1,3-phenylene)bis Oxygen] dianiline, etc.

式(B4)所表示的二胺(以下,有時表述為「二胺(B4)」)是具有四個苯環的芳香族二胺。認為所述二胺(B4)藉由直接鍵結於至少一個苯環上的胺基與二價連結基A處於間位,而具有高彎曲性,有助於聚醯亞胺分子鏈的柔軟性的提高。因此,藉由使用二胺(B4),聚醯亞胺的熱塑性提高。此處,作為連結基A,較佳為-O-、-CH2-、-C(CH3)2-、-SO2-、-CO-、-CONH-。 Diamine represented by formula (B4) (hereinafter, may be described as "diamine (B4)") is an aromatic diamine having four benzene rings. It is believed that the diamine (B4) has high flexibility due to the fact that the amine group directly bonded to at least one benzene ring is in the meta-position with the divalent linking group A, which contributes to the flexibility of the polyimide molecular chain improvement. Therefore, by using diamine (B4), the thermoplasticity of polyimide improves. Here, the linking group A is preferably -O-, -CH 2 -, -C(CH 3 ) 2 -, -SO 2 -, -CO-, -CONH-.

作為二胺(B4),可列舉:雙[4-(3-胺基苯氧基)苯基]甲烷、雙[4-(3-胺基苯氧基)苯基]丙烷、雙[4-(3-胺基苯氧基)苯基]醚、 雙[4-(3-胺基苯氧基)苯基]碸、雙[4-(3-胺基苯氧基)]二苯甲酮、雙[4,4'-(3-胺基苯氧基)]苯甲醯苯胺等。 Examples of the diamine (B4) include bis[4-(3-aminophenoxy)phenyl]methane, bis[4-(3-aminophenoxy)phenyl]propane, bis[4- (3-Aminophenoxy)phenyl]ether, Bis[4-(3-aminophenoxy)phenyl]pyridine, bis[4-(3-aminophenoxy)]benzophenone, bis[4,4'-(3-aminophenyl Oxygen)] benzylaniline, etc.

式(B5)所表示的二胺(以下,有時表述為「二胺(B5)」)是具有四個苯環的芳香族二胺。認為所述二胺(B5)藉由直接鍵結於至少一個苯環上的兩個二價連結基A彼此處於間位,聚醯亞胺分子鏈所具有的自由度增加且具有高彎曲性,有助於聚醯亞胺分子鏈的柔軟性的提高。因此,藉由使用二胺(B5),聚醯亞胺的熱塑性提高。此處,作為連結基A,較佳為-O-。 Diamine represented by formula (B5) (hereinafter, may be described as "diamine (B5)") is an aromatic diamine having four benzene rings. It is considered that the diamine (B5) is in the meta-position to each other through two divalent linking groups A directly bonded to at least one benzene ring, and the polyimide molecular chain has increased degrees of freedom and high flexibility, Contributes to the improvement of the flexibility of the polyimide molecular chain. Therefore, by using diamine (B5), the thermoplasticity of polyimide improves. Here, the linking group A is preferably -O-.

作為二胺(B5),可列舉4-[3-[4-(4-胺基苯氧基)苯氧基]苯氧基]苯胺、4,4'-[氧基雙(3,1-伸苯氧基)]雙苯胺等。 Examples of the diamine (B5) include 4-[3-[4-(4-aminophenoxy)phenoxy]phenoxy]aniline, 4,4'-[oxybis(3,1- Extended phenoxy)] dianiline, etc.

式(B6)所表示的二胺(以下,有時表述為「二胺(B6)」)是具有四個苯環的芳香族二胺。認為所述二胺(B6)藉由具有至少兩個醚鍵而具有高彎曲性,有助於聚醯亞胺分子鏈的柔軟性的提高。因此,藉由使用二胺(B6),聚醯亞胺的熱塑性提高。此處,作為連結基A,較佳為-C(CH3)2-、-O-、-SO2-、-CO-。 Diamine represented by formula (B6) (hereinafter, may be described as "diamine (B6)") is an aromatic diamine having four benzene rings. It is considered that the diamine (B6) has high flexibility by having at least two ether bonds, and contributes to the improvement of the flexibility of the polyimide molecular chain. Therefore, by using diamine (B6), the thermoplasticity of polyimide improves. Here, the linking group A is preferably -C(CH 3 ) 2 -, -O-, -SO 2 -, -CO-.

作為二胺(B6),例如可列舉:2,2-雙[4-(4-胺基苯氧基)苯基]丙烷(2,2-Bis[4-(4-aminophenoxy)phenyl]propane,BAPP)、雙[4-(4-胺基苯氧基)苯基]醚(Bis[4-(4-aminophenoxy)phenyl]ether,BAPE)、雙[4-(4-胺基苯氧基)苯基]碸(Bis[4-(4-aminophenoxy)phenyl]sulfone,BAPS)、雙[4-(4-胺基苯氧基)苯基]酮(Bis[4-(4-aminophenoxy)phenyl]ketone,BAPK)等。 Examples of diamines (B6) include 2,2-bis[4-(4-aminophenoxy)phenyl]propane (2,2-Bis[4-(4-aminophenoxy)phenyl]propane, BAPP), bis[4-(4-aminophenoxy)phenyl]ether (Bis[4-(4-aminophenoxy)phenyl]ether, BAPE), bis[4-(4-aminophenoxy) Phenyl]sulfone (Bis[4-(4-aminophenoxy)phenyl]sulfone, BAPS), bis[4-(4-aminophenoxy)phenyl]ketone (Bis[4-(4-aminophenoxy)phenyl] ketone, BAPK) and so on.

式(B7)所表示的二胺(以下,有時表述為「二胺(B7)」)是具有四個苯環的芳香族二胺。所述二胺(B7)於二苯基骨架的兩側分別具有彎曲性高的二價連結基A,因此認為有助於聚醯亞胺分子鏈的柔軟性的提高。因此,藉由使用二胺(B7),聚醯亞胺的熱塑性提高。此處,作為連結基A,較佳為-O-。 Diamine represented by formula (B7) (hereinafter, may be described as "diamine (B7)") is an aromatic diamine having four benzene rings. Since the diamine (B7) has a highly flexible divalent linking group A on both sides of the diphenyl skeleton, it is considered that it contributes to the improvement of the flexibility of the polyimide molecular chain. Therefore, by using diamine (B7), the thermoplasticity of polyimide improves. Here, the linking group A is preferably -O-.

作為二胺(B7),例如可列舉雙[4-(3-胺基苯氧基)]聯苯、雙[4-(4-胺基苯氧基)]聯苯等。 As diamine (B7), bis[4-(3-aminophenoxy)]biphenyl, bis[4-(4-aminophenoxy)]biphenyl etc. are mentioned, for example.

構成熱塑性聚醯亞胺層的熱塑性聚醯亞胺可相對於二胺殘基的100莫耳份,於60莫耳份以上、較佳為60莫耳份以上且99莫耳份以下的範圍內、更佳為70莫耳份以上且95莫耳份以下的範圍內含有由選自二胺(B1)~二胺(B7)中的至少一種二胺化合物所衍生的二胺殘基。二胺(B1)~二胺(B7)含有具有彎曲性的分子結構,因此藉由以所述範圍內的量來使用選自該些化合物中的至少一種二胺化合物,可提高聚醯亞胺分子鏈的柔軟性,且賦予熱塑性。若二胺(B1)~二胺(B7)的合計量相對於所有二胺成分的100莫耳份而未滿60莫耳份,則聚醯亞胺樹脂的柔軟性不足而無法獲得充分的熱塑性。 The thermoplastic polyimide constituting the thermoplastic polyimide layer may be within a range of 60 mole parts or more, preferably 60 mole parts or more and 99 mole parts or less, relative to 100 mole parts of diamine residues. , More preferably, a diamine residue derived from at least one diamine compound selected from diamine (B1) to diamine (B7) is contained in the range of 70 mole parts or more and 95 mole parts or less. Diamines (B1) to diamines (B7) contain a flexible molecular structure, so by using at least one diamine compound selected from these compounds in an amount within the range, the polyimide can be improved. Molecular chain flexibility, and impart thermoplasticity. When the total amount of diamine (B1) to diamine (B7) is less than 60 mole parts with respect to 100 mole parts of all diamine components, the flexibility of the polyimide resin is insufficient and sufficient thermoplasticity cannot be obtained. .

另外,作為構成熱塑性聚醯亞胺層的熱塑性聚醯亞胺中所含的二胺殘基,亦較佳為由通式(A1)表示的二胺化合物所衍生的二胺殘基。關於式(A1)表示的二胺化合物[二胺(A1)],如在非熱塑性聚醯亞胺的說明中所述般。二胺(A1)具有剛直結構,且具有對聚合物整體賦予有序結構的作用,因此可藉由抑制 分子的運動而使介電正切或吸濕性下降。進而,藉由用作熱塑性聚醯亞胺的原料,可獲得透氣性低、長期耐熱接著性優異的聚醯亞胺。 Moreover, as a diamine residue contained in the thermoplastic polyimide which comprises a thermoplastic polyimide layer, the diamine residue derived from the diamine compound represented by general formula (A1) is also preferable. The diamine compound [diamine (A1)] represented by the formula (A1) is as described in the description of the non-thermoplastic polyimide. Diamine (A1) has a rigid structure and has the effect of imparting an ordered structure to the polymer as a whole, so it can be inhibited by The movement of molecules reduces the dielectric tangent or hygroscopicity. Furthermore, by using it as a raw material for thermoplastic polyimide, polyimide having low air permeability and excellent long-term heat-resistant adhesion can be obtained.

構成熱塑性聚醯亞胺層的熱塑性聚醯亞胺可於較佳為1莫耳份以上且40莫耳份以下的範圍內、更佳為5莫耳份以上且30莫耳份以下的範圍內含有由二胺(A1)所衍生的二胺殘基。藉由以所述範圍內的量來使用二胺(A1),利用源自單體的剛直結構而聚合物整體形成有序結構,因此可獲得為熱塑性且透氣性及吸濕性低、長期耐熱接著性優異的聚醯亞胺。 The thermoplastic polyimide constituting the thermoplastic polyimide layer can be preferably within the range of 1 mole part or more and 40 mole parts or less, more preferably 5 mole parts or more and 30 mole parts or less. Contains a diamine residue derived from diamine (A1). By using the diamine (A1) in an amount within the above range, the polymer as a whole forms an ordered structure by utilizing the rigid structure derived from the monomer, so that it is thermoplastic and has low air permeability and hygroscopicity, and long-term heat resistance can be obtained. Polyimide with excellent adhesion.

構成熱塑性聚醯亞胺層的熱塑性聚醯亞胺可於不損及發明的效果的範圍內包含由二胺(A1)、二胺(B1)~二胺(B7)以外的二胺化合物所衍生的二胺殘基。 The thermoplastic polyimide constituting the thermoplastic polyimide layer may include diamine compounds derived from diamine compounds other than diamine (A1), diamine (B1) to diamine (B7) within the range that does not impair the effect of the invention. of diamine residues.

熱塑性聚醯亞胺中,藉由選定所述四羧酸殘基及二胺殘基的種類、或者應用兩種以上的四羧酸殘基或二胺殘基時各自的莫耳比,可控制熱膨脹係數、拉伸彈性係數、玻璃轉移溫度等。另外,熱塑性聚醯亞胺中,於具有多個聚醯亞胺的結構單元的情況下,可以嵌段的形式存在,亦可無規存在,但較佳為無規存在。 In thermoplastic polyimides, by selecting the types of the tetracarboxylic acid residues and diamine residues, or the respective molar ratios when two or more tetracarboxylic acid residues or diamine residues are used, it is possible to control Coefficient of thermal expansion, tensile modulus of elasticity, glass transition temperature, etc. In addition, in thermoplastic polyimide, when having a plurality of structural units of polyimide, it may exist in the form of a block or may exist randomly, but it is preferably present randomly.

再者,藉由將熱塑性聚醯亞胺中所含的四羧酸殘基及二胺殘基均設為芳香族基,可提高聚醯亞胺膜於高溫環境下的尺寸精度,且抑制面內延遲(RO)的變化量。 Furthermore, by making the tetracarboxylic acid residues and diamine residues contained in the thermoplastic polyimide aromatic groups, the dimensional accuracy of the polyimide film under high temperature environment can be improved, and the surface area can be suppressed. The amount of change in internal delay (RO).

熱塑性聚醯亞胺的醯亞胺基濃度較佳為33重量%以下。此處,「醯亞胺基濃度」表示聚醯亞胺中的醯亞胺基部 (-(CO)2-N-)的分子量除以聚醯亞胺的結構整體的分子量而得的值。若醯亞胺基濃度超過33重量%,則樹脂自身的分子量減小,且因極性基的增加而低吸濕性亦變差。藉由選擇所述二胺化合物的組合而控制熱塑性聚醯亞胺中的分子的配向性,藉此抑制伴隨醯亞胺基濃度下降的CTE的增加,確保低吸濕性。 The imide group concentration of the thermoplastic polyimide is preferably 33% by weight or less. Here, the "imide group concentration" means a value obtained by dividing the molecular weight of the imide group (-(CO) 2 -N-) in the polyimide by the molecular weight of the entire structure of the polyimide. If the imide group concentration exceeds 33% by weight, the molecular weight of the resin itself decreases, and the low hygroscopicity also deteriorates due to the increase of polar groups. By controlling the alignment of molecules in the thermoplastic polyimide by selecting the combination of the diamine compounds, the increase in CTE accompanying the decrease in the concentration of imide groups is suppressed, and low hygroscopicity is ensured.

熱塑性聚醯亞胺的重量平均分子量例如較佳為10,000~400,000的範圍內,更佳為50,000~350,000的範圍內。若重量平均分子量未滿10,000,則出現膜的強度下降而容易變脆的傾向。另一方面,若重量平均分子量超過400,000,則出現黏度過度增加且塗敷作業時容易發生膜厚度不均、條紋等不良情況的傾向。 The weight average molecular weight of the thermoplastic polyimide is, for example, preferably within a range of 10,000 to 400,000, more preferably within a range of 50,000 to 350,000. When the weight average molecular weight is less than 10,000, the strength of the film tends to decrease and tend to become brittle. On the other hand, if the weight-average molecular weight exceeds 400,000, the viscosity tends to increase excessively, and defects such as film thickness unevenness and streaks tend to easily occur during coating operations.

構成熱塑性聚醯亞胺層的熱塑性聚醯亞胺例如成為電路基板的絕緣樹脂中的接著層,因此為了抑制銅的擴散,最佳為完全經醯亞胺化的結構。其中,聚醯亞胺的一部分亦可成為醯胺酸。所述醯亞胺化率是使用傅立葉轉換紅外分光光度計(市售品:日本分光製造的FT/IR620),並利用一次反射衰減全反射(Attenuated Total Reflectance,ATR)法測定聚醯亞胺薄膜的紅外線吸收光譜,藉此以1015cm-1附近的苯環吸收體為基準,根據源自1780cm-1的醯亞胺基的C=O伸縮的吸光度而算出。 The thermoplastic polyimide constituting the thermoplastic polyimide layer is, for example, an adhesive layer in an insulating resin of a circuit board. Therefore, in order to suppress diffusion of copper, a completely imidized structure is preferable. Among them, a part of the polyimide may also be an amide acid. The imidization rate is to use a Fourier transform infrared spectrophotometer (commercially available: FT/IR620 manufactured by JASCO), and utilize a reflection attenuated total reflection (Attenuated Total Reflectance, ATR) method to measure the polyimide film Based on the infrared absorption spectrum of 1015cm -1 , the absorbance derived from the C=O stretching of the imide group was calculated based on the benzene ring absorber around 1015cm -1 .

(聚醯亞胺的合成) (Synthesis of Polyimide)

構成樹脂積層體50的聚醯亞胺可藉由使所述酸酐與二胺於溶媒中反應且於生成前驅物樹脂後進行加熱閉環而加以製造。例如,使大致等莫耳的酸酐成分與二胺成分溶解於有機溶媒中,於 0℃~100℃的範圍內的溫度下進行30分鐘~24小時攪拌而進行聚合反應,藉此可獲得作為聚醯亞胺前驅物的聚醯胺酸。於反應時,以所生成的前驅物於有機溶媒中成為5重量%~30重量%的範圍內、較佳為10重量%~20重量%的範圍內的方式溶解反應成分。作為聚合反應中使用的有機溶媒,例如可列舉:N,N-二甲基甲醯胺、N,N-二甲基乙醯胺(N,N-dimethyl acetamide,DMAc)、N-甲基-2-吡咯啶酮、2-丁酮、二甲基亞碸、硫酸二甲酯、環己酮、二噁烷、四氫呋喃、二乙二醇二甲醚(diglyme)、三乙二醇二甲醚等。亦可將該些溶媒併用使用兩種以上,進而亦可併用如二甲苯、甲苯般的芳香族烴。另外,作為所述有機溶劑的使用量,並無特別限制,但較佳為調整為藉由聚合反應而獲得的聚醯胺酸溶液(聚醯亞胺前驅物溶液)的濃度成為5重量%~30重量%左右的使用量而加以使用。 The polyimide constituting the resin laminate 50 can be produced by reacting the acid anhydride and diamine in a solvent, and heating to close the ring after forming a precursor resin. For example, approximately equimolar acid anhydride components and diamine components are dissolved in an organic solvent, and The polyamic acid which is a polyimide precursor can be obtained by carrying out a polymerization reaction by performing stirring at the temperature in the range of 0 degreeC - 100 degreeC for 30 minutes - 24 hours. During the reaction, the reaction components are dissolved so that the generated precursor is in the range of 5% by weight to 30% by weight, preferably 10% by weight to 20% by weight, in the organic solvent. Examples of the organic solvent used in the polymerization reaction include N,N-dimethylformamide, N,N-dimethylacetamide (N,N-dimethyl acetamide, DMAc), N-methyl- 2-pyrrolidone, 2-butanone, dimethylsulfide, dimethyl sulfate, cyclohexanone, dioxane, tetrahydrofuran, diglyme, triethylene glycol dimethyl ether wait. These solvents may be used in combination of two or more, and further aromatic hydrocarbons such as xylene and toluene may also be used in combination. In addition, the amount of the organic solvent used is not particularly limited, but it is preferably adjusted so that the concentration of the polyamic acid solution (polyimide precursor solution) obtained by the polymerization reaction becomes 5% by weight to 5% by weight. It is used in an amount of about 30% by weight.

於聚醯亞胺的合成中,所述酸酐及二胺分別可僅使用所述一種,亦可併用使用兩種以上。藉由選定酸酐及二胺的種類、或者使用兩種以上的酸酐或二胺時的各自的莫耳比,可控制熱膨脹性、接著性、玻璃轉移溫度等。 In the synthesis of the polyimide, the acid anhydride and the diamine may be used alone or in combination of two or more. Thermal expansion, adhesiveness, glass transition temperature, etc. can be controlled by selecting the types of acid anhydrides and diamines, or the respective molar ratios when using two or more kinds of acid anhydrides or diamines.

合成的前驅物通常有利的是作為反應溶媒溶液使用,但可視需要進行濃縮、稀釋或置換為其他有機溶媒。另外,前驅物通常溶媒可溶性優異,因此可有利地使用。使前驅物醯亞胺化的方法並無特別限制,例如可較佳地採用如下熱處理:於所述溶媒中在80℃~400℃的範圍內的溫度條件下花1小時~24小時進行 加熱。 Synthetic precursors are generally advantageously used as reaction solvent solutions, but can be concentrated, diluted or replaced with other organic solvents as needed. In addition, precursors are generally excellent in solvent solubility, so they can be used advantageously. The method for imidizing the precursor is not particularly limited. For example, the following heat treatment can be preferably used: in the solvent at a temperature in the range of 80° C. to 400° C. for 1 hour to 24 hours. heating.

<電路基板> <circuit board>

本實施形態的電路基板可藉由利用常法將覆金屬積層板的金屬層加工成圖案狀並形成配線層而加以製造。金屬層的圖案化例如可藉由利用光微影技術與蝕刻等的任意的方法進行。 The circuit board of this embodiment can be manufactured by processing the metal layer of a metal-clad laminate into a pattern shape by a conventional method, and forming a wiring layer. The patterning of the metal layer can be performed by any method such as photolithography and etching, for example.

再者,於製造電路基板時,作為通常進行的步驟,例如前步驟中的通孔加工、或後步驟的端子鍍敷、外形加工等步驟,可根據常法進行。 In addition, when manufacturing a circuit board, as a process normally performed, for example, the processing of a through-hole in the previous process, or the process of terminal plating and outline processing in a subsequent process, etc., can be performed according to a conventional method.

如上所述,本實施形態的覆金屬積層板藉由用作FPC為代表的電路基板材料,可賦予電路基板優異的阻抗匹配性且改善電信號的傳輸特性,因此可提高電子設備的可靠性。 As described above, by using the metal-clad laminate of this embodiment as a circuit board material represented by FPC, it can impart excellent impedance matching to the circuit board and improve the transmission characteristics of electrical signals, thereby improving the reliability of electronic equipment.

[實施例] [Example]

以下示出實施例,並對本發明的特徵進行更具體的說明。其中,本發明的範圍並不限定於實施例。再者,以下的實施例中,只要無特別說明,各種測定、評價為利用下述者。 Examples are shown below, and the features of the present invention will be described more specifically. However, the scope of the present invention is not limited to the Examples. In addition, in the following examples, unless otherwise specified, various measurements and evaluations used the following.

[黏度的測定] [Measurement of viscosity]

黏度的測定使用E型黏度計(博勒飛(Brookfield)公司製造、商品名:DV-II+Pro),測定25℃下的黏度。以扭矩成為10%~90%的方式設定轉速,在開始測定後經過2分鐘後,讀取黏度穩定時的值。 The viscosity was measured using an E-type viscometer (manufactured by Brookfield, trade name: DV-II+Pro), and the viscosity in 25 degreeC was measured. Set the rotational speed so that the torque becomes 10% to 90%, and read the value when the viscosity is stable 2 minutes after the start of the measurement.

[玻璃轉移溫度(Tg)的測定] [Measurement of glass transition temperature (Tg)]

關於玻璃轉移溫度,使用動態黏彈性測定裝置(DMA:UBM 公司製造、商品名:E4000F),於自30℃起至400℃為止於升溫速度為4℃/分鐘、頻率為1Hz下對5mm×20mm的尺寸的聚醯亞胺膜進行測定,將彈性係數變化(tanδ)為最大的溫度設為玻璃轉移溫度。再者,將顯示使用DMA測定的30℃下的儲存彈性係數為1.0×109Pa以上且300℃下的儲存彈性係數未滿3.0×108Pa者設為「熱塑性」,將顯示30℃下的儲存彈性係數為1.0×109Pa以上且300℃下的儲存彈性係數為3.0×108Pa以上者設為「非熱塑性」。 Regarding the glass transition temperature, using a dynamic viscoelasticity measuring device (DMA: manufactured by UBM Corporation, trade name: E4000F), from 30°C to 400°C, at a heating rate of 4°C/min and a frequency of 1 Hz for 5mm x 20mm The measurement was performed on a polyimide film having a size of , and the temperature at which the elastic coefficient change (tan δ) was the maximum was defined as the glass transition temperature. In addition, the storage modulus of elasticity at 30°C measured using DMA is 1.0×10 9 Pa or more and the storage modulus of elasticity at 300°C is less than 3.0×10 8 Pa as "thermoplastic", and the temperature at 30°C is displayed. A storage modulus of 1.0×10 9 Pa or more and a storage modulus of 3.0×10 8 Pa or more at 300° C. were defined as “non-thermoplastic”.

[熱膨脹係數(CTE)的測定] [Measurement of Coefficient of Thermal Expansion (CTE)]

使用熱機械分析儀(布魯克(Bruker)公司製造、商品名:4000SA),一面對3mm×20mm的尺寸的聚醯亞胺膜施加5.0g的負荷一面以一定的升溫速度自30℃起升溫至265℃為止,進而於所述溫度下保持10分鐘後,以5℃/分鐘的速度進行冷卻,求出自250℃起至100℃為止的平均熱膨脹係數(熱膨脹係數)。 Using a thermomechanical analyzer (manufactured by Bruker, trade name: 4000SA), while applying a load of 5.0 g to a polyimide film having a size of 3 mm×20 mm, the temperature was raised from 30° C. to After keeping at the temperature for 10 minutes up to 265°C, it was cooled at a rate of 5°C/min, and the average coefficient of thermal expansion (coefficient of thermal expansion) from 250°C to 100°C was obtained.

[吸濕率的測定] [Measurement of moisture absorption rate]

準備兩片聚醯亞胺膜的試驗片(寬度4cm×長度25cm),於80℃下乾燥1小時。於乾燥後立即放入23℃/50%RH的恆溫恆濕室內,靜置24小時以上,根據其前後的重量變化並藉由下式求出。 Two test pieces (width 4 cm x length 25 cm) of the polyimide film were prepared, and dried at 80° C. for 1 hour. Immediately after drying, put it in a constant temperature and humidity room at 23°C/50%RH, let it stand for more than 24 hours, and use the following formula to calculate the weight change before and after.

吸濕率(重量%)=[(吸濕後重量-乾燥後重量)/乾燥後重量]×100 Moisture absorption rate (weight%)=[(weight after moisture absorption-weight after drying)/weight after drying]×100

[介電常數及介電正切的測定] [Measurement of dielectric constant and dielectric tangent]

介電常數及介電正切使用向量網路分析儀(安捷倫(Agilent)公司製造、商品名:向量網路分析儀E8363C)及SPDR共振器,測定頻率10GHz下的樹脂片(硬化後的樹脂片)的介電常數(ε1)及介電正切(Tanδ1)。再者,測定中使用的樹脂片是於溫度:24℃~26℃、濕度:45%~55%的條件下放置24小時者。 Dielectric constant and dielectric tangent were measured on a resin sheet (hardened resin sheet) at a frequency of 10 GHz using a vector network analyzer (manufactured by Agilent, trade name: Vector Network Analyzer E8363C) and an SPDR resonator. The dielectric constant (ε 1 ) and dielectric tangent (Tanδ 1 ). In addition, the resin sheet used in the measurement was the thing left for 24 hours under the conditions of temperature: 24-26 degreeC, and humidity: 45%-55%.

另外,作為表示樹脂積層體的介電特性的指標的E1基於所述數式(a)計算出。 In addition, E 1 , which is an index showing the dielectric properties of the resin laminate, was calculated based on the above formula (a).

[銅箔的表面粗糙度的測定] [Measurement of Surface Roughness of Copper Foil]

十點平均粗糙度(Rz)及算術平均高度(Ra)的測定: Determination of ten-point average roughness (Rz) and arithmetic mean height (Ra):

使用觸針式表面粗糙度計(小阪研究所股份有限公司製造、商品名:索福達(SURFCODER)ET-3000),藉由力(Force):100μN、速度(Speed):20μm、範圍(Range):800μm的測定條件求出。再者,表面粗糙度的計算藉由依照日本工業標準(Japanese Industrial Standards,JIS)-B0601:1994的方法計算出。 Using a stylus surface roughness meter (manufactured by Kosaka Laboratory Co., Ltd., trade name: SURFCODER ET-3000), by force (Force): 100μN, speed (Speed): 20μm, range (Range) ): Obtained under the measurement conditions of 800 μm. Furthermore, the calculation of the surface roughness was calculated according to the method of Japanese Industrial Standards (Japanese Industrial Standards, JIS)-B0601:1994.

[剝離強度的測定] [Measurement of Peel Strength]

將覆金屬積層板加工成寬度為1.0mm後,切斷為寬度:8cm×長度:4cm,而製備測定樣品。使用滕喜龍測試儀(Tensilon Tester)(東洋精機製作所製造、商品名:斯特羅格拉夫(Strograph)VE-1D),藉由雙面膠帶將測定樣品的其中一面固定於鋁板上,針對另一面,沿90°方向以50mm/分鐘的速度剝離10mm,求出此時的中央強度。「銅箔剝離強度」是在流延側的銅箔層與樹脂積層體的界面剝離時的剝離強度,「熱壓接面的剝離強度」是在進行了 熱壓接的兩個樹脂層的接合面剝離時的剝離強度。 After the metal-clad laminate was processed to a width of 1.0 mm, it was cut into a width: 8 cm×length: 4 cm, and a measurement sample was prepared. Using a Tensilon Tester (manufactured by Toyo Seiki Seisakusho, trade name: Strograph VE-1D), fix one side of the measurement sample on an aluminum plate with double-sided tape, and test the other side , peel 10mm along the 90° direction at a speed of 50mm/min, and obtain the central strength at this time. "Copper foil peel strength" is the peel strength when the copper foil layer on the casting side and the resin laminate interface are peeled off, and "The peel strength of the thermocompression bonded surface" is the Peel strength when the bonded surfaces of two resin layers bonded by thermocompression are peeled off.

合成例中使用的縮略詞表示以下的化合物。 The abbreviations used in the synthesis examples indicate the following compounds.

BTDA:3,3',4,4'-二苯甲酮四羧酸二酐 BTDA: 3,3',4,4'-Benzophenone tetracarboxylic dianhydride

PMDA:均苯四甲酸二酐 PMDA: pyromellitic dianhydride

BPDA:3,3',4,4'-聯苯四羧酸二酐 BPDA: 3,3',4,4'-Biphenyltetracarboxylic dianhydride

DSDA:3,3',4,4'-二苯基碸四羧酸二酐 DSDA: 3,3',4,4'-Diphenyltetracarboxylic dianhydride

DAPE:4,4'-二胺基二苯基醚 DAPE: 4,4'-Diaminodiphenyl ether

BAPP:2,2-雙[4-(4-胺基苯氧基)苯基]丙烷 BAPP: 2,2-bis[4-(4-aminophenoxy)phenyl]propane

m-TB:2,2'-二甲基-4,4'-二胺基聯苯 m-TB: 2,2'-dimethyl-4,4'-diaminobiphenyl

TPE-R:1,3-雙(4-胺基苯氧基)苯 TPE-R: 1,3-bis(4-aminophenoxy)benzene

DMAc:N,N-二甲基乙醯胺 DMAc: N,N-Dimethylacetamide

(合成例1) (Synthesis Example 1)

於具備熱電偶及攪拌機且可導入氮氣的反應容器中加入312g的DMAc。在容器中對14.67g的DAPE(0.073莫耳)進行攪拌並使其溶解於所述溶媒中。其次,添加23.13g的BTDA(0.072莫耳)。其後,繼續攪拌3小時,製備溶液黏度2,960mPa.s的聚醯胺酸的樹脂溶液a。 312 g of DMAc was placed in a reaction vessel equipped with a thermocouple and a stirrer and capable of introducing nitrogen gas. 14.67 g of DAPE (0.073 moles) was stirred and dissolved in the vehicle in a vessel. Next, 23.13 g of BTDA (0.072 mol) was added. Thereafter, the stirring was continued for 3 hours, and the viscosity of the prepared solution was 2,960mPa. s polyamide resin solution a.

其次,於厚度12μm的電解銅箔的單面(Rz:2.1μm),以硬化後的厚度成為約25μm的方式均勻地塗佈聚醯胺酸的樹脂溶液a後,於120℃下加熱乾燥而去除溶媒。進而,於30分鐘以內自120℃至360℃為止進行階段性的熱處理,完成醯亞胺化。使用氯化鐵水溶液將銅箔蝕刻去除,製備聚醯亞胺膜a(熱塑性、Tg: 283℃、CTE:53ppm/K、吸濕率:1.30重量%)。 Next, on one side (Rz: 2.1 μm) of an electrolytic copper foil with a thickness of 12 μm, the resin solution a of polyamic acid is uniformly applied so that the thickness after curing becomes about 25 μm, and then heated and dried at 120° C. Remove solvent. Furthermore, stepwise heat treatment is performed from 120°C to 360°C within 30 minutes to complete imidization. Copper foil is etched away using ferric chloride aqueous solution to prepare polyimide film a (thermoplasticity, Tg: 283°C, CTE: 53ppm/K, moisture absorption rate: 1.30% by weight).

(合成例2) (Synthesis Example 2)

於具備熱電偶及攪拌機且可導入氮氣的反應容器中加入312g的DMAc。於所述反應容器中加入6.60g球狀填料(二氧化矽、平均粒徑1.2μm、雅都瑪(ADMATECHS)公司製造、「SE4050」),利用超音波分散裝置分散3小時。在容器中對14.67g的DAPE(0.073莫耳)進行攪拌並使其溶解於所述溶液中。其次,添加23.13g的BTDA(0.072莫耳)。其後,繼續攪拌3小時,製備溶液黏度3,160mPa.s的聚醯胺酸的樹脂溶液b(二氧化矽含量:10體積%)。 312 g of DMAc was placed in a reaction vessel equipped with a thermocouple and a stirrer and capable of introducing nitrogen gas. 6.60 g of spherical fillers (silicon dioxide, average particle diameter: 1.2 μm, manufactured by ADMATECHS, “SE4050”) were added to the reaction vessel, and dispersed for 3 hours by an ultrasonic disperser. 14.67 g of DAPE (0.073 moles) was stirred and dissolved in the solution in a vessel. Next, 23.13 g of BTDA (0.072 mol) was added. Thereafter, the stirring was continued for 3 hours, and the viscosity of the prepared solution was 3,160mPa. The polyamic acid resin solution b (silicon dioxide content: 10% by volume) of s.

(合成例3) (Synthesis Example 3)

於具備熱電偶及攪拌機且可導入氮氣的反應容器中加入308g的DMAc。在容器中對27.14g的BAPP(0.066莫耳)進行攪拌並使其溶解於所述溶媒中。其次,添加14.86g的PMDA(0.068莫耳)。其後,繼續攪拌3小時,製備溶液黏度2,850mPa.s的聚醯胺酸的樹脂溶液c。使用樹脂溶液c,與合成例1同樣地製備聚醯亞胺膜c(熱塑性、Tg:312℃、CTE:55ppm/K、吸濕率:0.54重量%)。 308 g of DMAc was placed in a reaction vessel equipped with a thermocouple and a stirrer and capable of introducing nitrogen gas. 27.14 g of BAPP (0.066 moles) were stirred and dissolved in the vehicle in a vessel. Next, 14.86 g of PMDA (0.068 mol) was added. Thereafter, the stirring was continued for 3 hours, and the viscosity of the prepared solution was 2,850mPa. s polyamide resin solution c. A polyimide film c (thermoplastic, Tg: 312° C., CTE: 55 ppm/K, moisture absorption rate: 0.54% by weight) was prepared in the same manner as in Synthesis Example 1 using the resin solution c.

(合成例4) (Synthesis Example 4)

於具備熱電偶及攪拌機且可導入氮氣的反應容器中加入308g的DMAc。在容器中對22.57g的m-TB(0.106莫耳)進行攪拌並使其溶解於所述溶媒中。其次,添加6.20g的BPDA(0.021莫耳)及18.37g的PMDA(0.084莫耳)。其後,繼續攪拌3小時, 製備溶液黏度20,000mPa.s的聚醯胺酸的樹脂溶液d。使用樹脂溶液d,與合成例1同樣地製備聚醯亞胺膜d(非熱塑性、Tg:385℃、CTE:15ppm/K)。 308 g of DMAc was placed in a reaction vessel equipped with a thermocouple and a stirrer and capable of introducing nitrogen gas. 22.57 g of m-TB (0.106 moles) were stirred and dissolved in the vehicle in a vessel. Next, 6.20 g of BPDA (0.021 mol) and 18.37 g of PMDA (0.084 mol) were added. Thereafter, stirring was continued for 3 hours, The viscosity of the prepared solution is 20,000mPa. s polyamide resin solution d. Polyimide film d (non-thermoplastic, Tg: 385° C., CTE: 15 ppm/K) was prepared in the same manner as in Synthesis Example 1 using resin solution d.

(合成例5) (Synthesis Example 5)

於具備熱電偶及攪拌機且可導入氮氣的反應容器中加入255g的DMAc。在容器中對22.13g的TPE-R(0.076莫耳)進行攪拌並使其溶解於所述溶媒中。其次,添加16.17g的DSDA(0.047莫耳)及6.78g的PMDA(0.031莫耳)。其後,繼續攪拌2小時,製備溶液黏度2,640mPa.s的聚醯胺酸的樹脂溶液e。使用樹脂溶液e,與合成例1同樣地製備聚醯亞胺膜e(熱塑性、Tg:277℃、CTE:61ppm/K、吸濕率:0.90重量%)。 255 g of DMAc was placed in a reaction vessel equipped with a thermocouple and a stirrer and capable of introducing nitrogen gas. 22.13 g of TPE-R (0.076 moles) were stirred and dissolved in the vehicle in a vessel. Next, 16.17 g of DSDA (0.047 mol) and 6.78 g of PMDA (0.031 mol) were added. Thereafter, the stirring was continued for 2 hours, and the viscosity of the prepared solution was 2,640mPa. s polyamide resin solution e. A polyimide film e (thermoplastic, Tg: 277° C., CTE: 61 ppm/K, moisture absorption rate: 0.90% by weight) was produced in the same manner as in Synthesis Example 1 using the resin solution e.

(合成例6) (Synthesis Example 6)

於具備熱電偶及攪拌機且可導入氮氣的反應容器中加入200g的DMAc。在容器中對1.335g的m-TB(0.0063莫耳)及10.414g的TPE-R(0.0356莫耳)進行攪拌並使其溶解於所述溶媒中。其次,添加0.932g的PMDA(0.0043莫耳)及11.319g的BPDA(0.0385莫耳)。其後,繼續攪拌2小時,製備溶液黏度1,420mPa.s的聚醯胺酸的樹脂溶液f。使用樹脂溶液f,與合成例1同樣地製備聚醯亞胺膜f(熱塑性、Tg:220℃、CTE:52ppm/K、吸濕率:0.36重量%)。 200 g of DMAc was placed in a reaction vessel equipped with a thermocouple and a stirrer and capable of introducing nitrogen gas. 1.335 g of m-TB (0.0063 mol) and 10.414 g of TPE-R (0.0356 mol) were stirred and dissolved in the vehicle in a vessel. Next, 0.932 g of PMDA (0.0043 mol) and 11.319 g of BPDA (0.0385 mol) were added. Thereafter, the stirring was continued for 2 hours, and the viscosity of the prepared solution was 1,420mPa. s polyamide resin solution f. Using the resin solution f, a polyimide film f (thermoplastic, Tg: 220° C., CTE: 52 ppm/K, moisture absorption rate: 0.36% by weight) was produced in the same manner as in Synthesis Example 1.

(合成例7) (Synthesis Example 7)

於具備熱電偶及攪拌機且可導入氮氣的反應容器中加入250 g的DMAc。在容器中對12.323g的m-TB(0.0580莫耳)及1.886g的TPE-R(0.0064莫耳)進行攪拌並使其溶解於所述溶媒中。其次,添加8.314g的PMDA(0.0381莫耳)及7.477g的BPDA(0.0254莫耳)。其後,繼續攪拌3小時,製備溶液黏度31,500mPa.s的聚醯胺酸的樹脂溶液g。使用樹脂溶液g,與合成例1同樣地製備聚醯亞胺膜g(非熱塑性、Tg:303℃、CTE:15.6ppm/K、吸濕率:0.61重量%)。 Add 250 DMAc for g. 12.323 g of m-TB (0.0580 mol) and 1.886 g of TPE-R (0.0064 mol) were stirred and dissolved in the vehicle in a vessel. Next, 8.314 g of PMDA (0.0381 mol) and 7.477 g of BPDA (0.0254 mol) were added. Thereafter, the stirring was continued for 3 hours, and the viscosity of the prepared solution was 31,500mPa. s polyamide resin solution g. Using the resin solution g, polyimide film g (non-thermoplastic, Tg: 303° C., CTE: 15.6 ppm/K, moisture absorption rate: 0.61% by weight) was produced in the same manner as in Synthesis Example 1.

[實施例1] [Example 1]

於長條的電解銅箔(Rz:0.8μm、Ra:0.2μm)的表面,以硬化後的厚度成為約2μm~3μm的方式均勻地塗佈樹脂溶液f後,於120℃下加熱乾燥,去除溶媒。其次,於其上以硬化後的厚度成為約21μm的方式均勻地塗佈樹脂溶液g後,於120℃下加熱乾燥,去除溶媒。進而,於其上以硬化後的厚度成為約2μm~3μm的方式均勻地塗佈樹脂溶液b後,於120℃下加熱乾燥,去除溶媒。進而,於其上以硬化後的厚度成為約2μm~3μm的方式均勻地塗佈樹脂溶液f後,於120℃下加熱乾燥,去除溶媒。其次,於其上以硬化後的厚度成為約21μm的方式均勻地塗佈樹脂溶液g後,於120℃下加熱乾燥,去除溶媒。進而,於其上以硬化後的厚度成為約2μm~3μm的方式均勻地塗佈樹脂溶液f後,於120℃下加熱乾燥,去除溶媒。如此,於形成六層聚醯胺酸層後,自120℃至360℃為止進行階段性的熱處理,完成醯亞胺化,而製備樹脂積層體的厚度為50μm、且非熱塑性聚醯亞胺層(由樹脂溶液g形成 的聚醯亞胺層)的厚度相對於樹脂積層體整體的比率為82%的單面覆銅積層板1B。 On the surface of long electrodeposited copper foil (Rz: 0.8μm, Ra: 0.2μm), apply resin solution f uniformly so that the thickness after curing becomes about 2μm~3μm, heat and dry at 120℃, remove solvent. Next, the resin solution g was uniformly applied thereon so that the thickness after curing was about 21 μm, and then heated and dried at 120° C. to remove the solvent. Furthermore, after the resin solution b was uniformly apply|coated so that the thickness after hardening may become about 2 micrometers - 3 micrometers, it heat-dried at 120 degreeC, and removed the solvent. Furthermore, after the resin solution f was uniformly apply|coated so that the thickness after hardening may become about 2 micrometers - 3 micrometers, it heat-dried at 120 degreeC, and removed the solvent. Next, the resin solution g was uniformly applied thereon so that the thickness after curing was about 21 μm, and then heated and dried at 120° C. to remove the solvent. Furthermore, after the resin solution f was uniformly apply|coated so that the thickness after hardening may become about 2 micrometers - 3 micrometers, it heat-dried at 120 degreeC, and removed the solvent. In this way, after the six polyamide layers are formed, heat treatment is carried out in stages from 120°C to 360°C to complete the imidization, and the thickness of the resin laminate is 50 μm, and the non-thermoplastic polyimide layer is prepared. (formed from resin solution g A single-sided copper-clad laminate 1B in which the ratio of the thickness of the polyimide layer) to the entire resin laminate is 82%.

同時在一對加熱輥之間以4m/分鐘的速度連續地供給單面覆銅積層板1B的聚醯亞胺層與電解銅箔(Rz:0.8μm、Ra:0.2μm)並進行熱壓接(輥表面溫度:320℃、輥間的線壓:134kN/m),藉此製備樹脂積層體的厚度為50μm的兩面覆銅積層板1。兩面覆銅積層板1中的銅箔剝離強度超過1.0kN/m。藉由將所述兩面覆銅積層板1的銅箔蝕刻去除,而製備聚醯亞胺膜1。所述聚醯亞胺膜1的介電常數ε1為3.45,介電正切Tanδ1為0.0039,根據該些介電特性計算出的E1為0.0072。 At the same time, the polyimide layer and the electrolytic copper foil (Rz: 0.8 μm, Ra: 0.2 μm) of the single-sided copper-clad laminate 1B are continuously supplied between a pair of heating rollers at a speed of 4 m/min and bonded by thermocompression (roll surface temperature: 320° C., linear pressure between rolls: 134 kN/m), thereby producing a double-sided copper-clad laminate 1 with a resin laminate thickness of 50 μm. The copper foil peeling strength in the double-sided copper-clad laminated board 1 exceeded 1.0 kN/m. The polyimide film 1 is prepared by etching and removing the copper foil of the double-sided copper-clad laminate 1 . The dielectric constant ε 1 of the polyimide film 1 is 3.45, the dielectric tangent Tan δ 1 is 0.0039, and the E 1 calculated according to these dielectric properties is 0.0072.

[實施例2] [Example 2]

除了使用樹脂溶液a來代替樹脂溶液b以外,與實施例1同樣地製備樹脂積層體的厚度為50μm、且非熱塑性聚醯亞胺層(由樹脂溶液g形成的聚醯亞胺層)的厚度相對於樹脂積層體整體的比率為82%的單面覆銅積層板2B。 Except for using resin solution a instead of resin solution b, the thickness of the resin laminate was 50 μm and the thickness of the non-thermoplastic polyimide layer (polyimide layer formed from resin solution g) was prepared in the same manner as in Example 1. Single-sided copper-clad laminate 2B having a ratio of 82% to the entire resin laminate.

準備單面覆銅積層板2B及電解銅箔(Rz:0.8μm、Ra:0.2μm),與實施例1同樣地製備聚醯亞胺層的厚度為50μm的兩面覆銅積層板2。兩面覆銅積層板2中的銅箔剝離強度超過1.0kN/m。藉由將所述兩面覆銅積層板2的銅箔蝕刻去除,而製備聚醯亞胺膜2。所述聚醯亞胺膜2的介電常數ε1為3.45,介電正切Tanδ1為0.0038,根據該些介電特性計算出的E1為0.0071。 A single-sided copper-clad laminate 2B and an electrolytic copper foil (Rz: 0.8 μm, Ra: 0.2 μm) were prepared, and a double-sided copper-clad laminate 2 with a polyimide layer thickness of 50 μm was prepared in the same manner as in Example 1. The copper foil peeling strength in the double-sided copper-clad laminated board 2 exceeded 1.0 kN/m. The polyimide film 2 is prepared by etching and removing the copper foil of the double-sided copper-clad laminate 2 . The dielectric constant ε 1 of the polyimide film 2 is 3.45, the dielectric tangent Tan δ 1 is 0.0038, and the E 1 calculated according to these dielectric properties is 0.0071.

[實施例3] [Example 3]

除了使用樹脂溶液f來代替樹脂溶液b以外,與實施例1同樣地製備聚醯亞胺層的厚度為50μm、且非熱塑性聚醯亞胺層(由樹脂溶液g形成的聚醯亞胺層)的厚度相對於樹脂積層體整體的比率為82%的單面覆銅積層板3B。 Except for using resin solution f instead of resin solution b, a polyimide layer having a thickness of 50 μm and a non-thermoplastic polyimide layer (polyimide layer formed from resin solution g) was prepared in the same manner as in Example 1. Single-sided copper-clad laminate 3B in which the ratio of thickness to the entire resin laminate is 82%.

準備單面覆銅積層板3B及電解銅箔(Rz:0.8μm、Ra:0.2μm),與實施例1同樣地製備聚醯亞胺層的厚度為50μm的兩面覆銅積層板3。兩面覆銅積層板3中的銅箔剝離強度超過1.0kN/m。藉由將所述兩面覆銅積層板3的銅箔蝕刻去除,而製備聚醯亞胺膜3。所述聚醯亞胺膜3的介電常數ε1為3.43,介電正切Tanδ1為0.0032,根據該些介電特性計算出的E1為0.0059。 A single-sided copper-clad laminate 3B and an electrolytic copper foil (Rz: 0.8 μm, Ra: 0.2 μm) were prepared, and a double-sided copper-clad laminate 3 with a polyimide layer thickness of 50 μm was prepared in the same manner as in Example 1. The copper foil peeling strength in the double-sided copper-clad laminated board 3 exceeded 1.0 kN/m. The polyimide film 3 is prepared by etching and removing the copper foil of the double-sided copper-clad laminate 3 . The dielectric constant ε 1 of the polyimide film 3 is 3.43, the dielectric tangent Tan δ 1 is 0.0032, and the E 1 calculated according to these dielectric properties is 0.0059.

[實施例4] [Example 4]

於長條的電解銅箔(Rz:0.8μm、Ra:0.2μm)的表面,以硬化後的厚度成為約2μm~3μm的方式均勻地塗佈樹脂溶液f後,於120℃下加熱乾燥,去除溶媒。其次,於其上以硬化後的厚度成為約34μm的方式均勻地塗佈樹脂溶液g後,於120℃下加熱乾燥,去除溶媒。進而,於其上以硬化後的厚度成為約2μm~3μm的方式均勻地塗佈樹脂溶液c後,於120℃下加熱乾燥,去除溶媒。進而,於其上以硬化後的厚度成為約2μm~3μm的方式均勻地塗佈樹脂溶液c後,於120℃下加熱乾燥,去除溶媒。其次,於其上以硬化後的厚度成為約34μm的方式均勻地塗佈樹脂溶液g後,於120℃下加熱乾燥,去除溶媒。進而,於其上以硬化後的厚度成為約2μm~3μm的方式均勻地塗佈樹脂溶液f後,於120℃下加 熱乾燥,去除溶媒。如此,於形成六層聚醯胺酸層後,自120℃至360℃為止進行階段性的熱處理,完成醯亞胺化,而製備樹脂積層體的厚度為76μm、且非熱塑性聚醯亞胺層(由樹脂溶液g形成的聚醯亞胺層)的厚度相對於樹脂積層體整體的比率為87%的單面覆銅積層板4B。 On the surface of long electrodeposited copper foil (Rz: 0.8μm, Ra: 0.2μm), apply resin solution f uniformly so that the thickness after curing becomes about 2μm~3μm, heat and dry at 120℃, remove solvent. Next, the resin solution g was uniformly applied thereon so that the thickness after curing was about 34 μm, and then heated and dried at 120° C. to remove the solvent. Furthermore, after the resin solution c was uniformly apply|coated so that the thickness after hardening may become about 2 micrometers - 3 micrometers, it heat-dried at 120 degreeC, and removed the solvent. Furthermore, after the resin solution c was uniformly apply|coated so that the thickness after hardening may become about 2 micrometers - 3 micrometers, it heat-dried at 120 degreeC, and removed the solvent. Next, the resin solution g was uniformly applied thereon so that the thickness after curing was about 34 μm, and then heated and dried at 120° C. to remove the solvent. Furthermore, after the resin solution f was evenly coated thereon so that the thickness after curing became about 2 μm to 3 μm, it was heated at 120° C. Heat dry and remove solvent. In this way, after the six polyamide layers are formed, heat treatment is carried out in stages from 120°C to 360°C to complete the imidization, and the thickness of the resin laminate is 76 μm, and the non-thermoplastic polyimide layer is prepared. The single-sided copper-clad laminate 4B in which the ratio of the thickness of (the polyimide layer formed from the resin solution g) to the entire resin laminate is 87%.

準備單面覆銅積層板4B及電解銅箔(Rz:0.8μm、Ra:0.2μm),與實施例1同樣地製備樹脂積層體的厚度為76μm的兩面覆銅積層板4。兩面覆銅積層板4中的銅箔剝離強度超過1.0kN/m。藉由將所述兩面覆銅積層板4的銅箔蝕刻去除,而製備聚醯亞胺膜4。所述聚醯亞胺膜4的介電常數ε1為3.20,介電正切Tanδ1為0.0032,根據該些介電特性計算出的E1為0.0057。 A single-sided copper-clad laminate 4B and an electrolytic copper foil (Rz: 0.8 μm, Ra: 0.2 μm) were prepared, and a double-sided copper-clad laminate 4 having a resin laminate thickness of 76 μm was prepared in the same manner as in Example 1. The copper foil peel strength in the double-sided copper-clad laminate 4 exceeded 1.0 kN/m. The polyimide film 4 is prepared by etching and removing the copper foil of the double-sided copper-clad laminate 4 . The dielectric constant ε 1 of the polyimide film 4 is 3.20, the dielectric tangent Tan δ 1 is 0.0032, and the E 1 calculated according to these dielectric properties is 0.0057.

[實施例5] [Example 5]

於長條的電解銅箔(Rz:0.8μm、Ra:0.2μm)的表面,以硬化後的厚度成為約2μm~3μm的方式均勻地塗佈樹脂溶液f後,於120℃下加熱乾燥,去除溶媒。其次,於其上以硬化後的厚度成為約35μm的方式均勻地塗佈樹脂溶液g後,於120℃下加熱乾燥,去除溶媒。進而,於其上以硬化後的厚度成為約2μm~3μm的方式均勻地塗佈樹脂溶液f後,於120℃下加熱乾燥,去除溶媒。其次,於其上以硬化後的厚度成為約34μm的方式均勻地塗佈樹脂溶液g後,於120℃下加熱乾燥,去除溶媒。進而,於其上以硬化後的厚度成為約2μm~3μm的方式均勻地塗佈樹脂溶液f後,於120℃下加熱乾燥,去除溶媒。如此,於形成五層聚醯胺酸層後, 自120℃至360℃為止進行階段性的熱處理,完成醯亞胺化,而製備樹脂積層體的厚度為76μm、且非熱塑性聚醯亞胺層(由樹脂溶液g形成的聚醯亞胺層)的厚度相對於樹脂積層體整體的比率為90%的單面覆銅積層板5B。 On the surface of long electrodeposited copper foil (Rz: 0.8μm, Ra: 0.2μm), apply resin solution f uniformly so that the thickness after curing becomes about 2μm~3μm, heat and dry at 120℃, remove solvent. Next, the resin solution g was uniformly applied thereon so that the thickness after curing was about 35 μm, and then heated and dried at 120° C. to remove the solvent. Furthermore, after the resin solution f was uniformly apply|coated so that the thickness after hardening may become about 2 micrometers - 3 micrometers, it heat-dried at 120 degreeC, and removed the solvent. Next, the resin solution g was uniformly applied thereon so that the thickness after curing was about 34 μm, and then heated and dried at 120° C. to remove the solvent. Furthermore, after the resin solution f was uniformly apply|coated so that the thickness after hardening may become about 2 micrometers - 3 micrometers, it heat-dried at 120 degreeC, and removed the solvent. Thus, after forming five polyamide layers, Step-by-step heat treatment from 120°C to 360°C completes imidization to prepare a resin laminate with a thickness of 76 μm and a non-thermoplastic polyimide layer (a polyimide layer formed from a resin solution g) A single-sided copper-clad laminate 5B in which the ratio of thickness to the entire resin laminate is 90%.

準備單面覆銅積層板5B及電解銅箔(Rz:0.8μm、Ra:0.2μm),與實施例1同樣地製備樹脂積層體的厚度為76μm的兩面覆銅積層板5。兩面覆銅積層板5中的銅箔剝離強度超過1.0kN/m。藉由將所述兩面覆銅積層板5的銅箔蝕刻去除,而製備聚醯亞胺膜5。所述聚醯亞胺膜5的介電常數ε1為3.41,介電正切Tanδ1為0.0033,根據該些介電特性計算出的E1為0.0061。 A single-sided copper-clad laminate 5B and an electrolytic copper foil (Rz: 0.8 μm, Ra: 0.2 μm) were prepared, and a double-sided copper-clad laminate 5 having a resin laminate thickness of 76 μm was prepared in the same manner as in Example 1. The copper foil peeling strength in the double-sided copper-clad laminated board 5 exceeded 1.0 kN/m. The polyimide film 5 was prepared by etching and removing the copper foil of the double-sided copper-clad laminate 5 . The dielectric constant ε 1 of the polyimide film 5 is 3.41, the dielectric tangent Tan δ 1 is 0.0033, and the E 1 calculated according to these dielectric properties is 0.0061.

[實施例6] [Example 6]

於長條的電解銅箔(Rz:0.8μm、Ra:0.2μm)的表面,以硬化後的厚度成為約2μm~3μm的方式均勻地塗佈樹脂溶液f後,於120℃下加熱乾燥,去除溶媒。其次,於其上以硬化後的厚度成為約21μm的方式均勻地塗佈樹脂溶液g後,於120℃下加熱乾燥,去除溶媒。進而,於其上以硬化後的厚度成為約2μm~3μm的方式均勻地塗佈樹脂溶液b後,於120℃下加熱乾燥,去除溶媒。進而,於其上以硬化後的厚度成為約23μm的方式均勻地塗佈樹脂溶液g後,於120℃下加熱乾燥,去除溶媒。進而,於其上以硬化後的厚度成為約2μm~3μm的方式均勻地塗佈樹脂溶液f後,於120℃下加熱乾燥,去除溶媒。如此,於形成五層聚醯胺酸層後,自120℃至360℃為止進行階段性的熱處理,完成醯亞胺化, 而製備樹脂積層體的厚度為50μm、且非熱塑性聚醯亞胺層(由樹脂溶液g形成的聚醯亞胺層)的厚度相對於樹脂積層體整體的比率為86%的單面覆銅積層板6B。 On the surface of long electrodeposited copper foil (Rz: 0.8μm, Ra: 0.2μm), apply resin solution f uniformly so that the thickness after curing becomes about 2μm~3μm, heat and dry at 120℃, remove solvent. Next, the resin solution g was uniformly applied thereon so that the thickness after curing was about 21 μm, and then heated and dried at 120° C. to remove the solvent. Furthermore, after the resin solution b was uniformly apply|coated so that the thickness after hardening may become about 2 micrometers - 3 micrometers, it heat-dried at 120 degreeC, and removed the solvent. Furthermore, after the resin solution g was uniformly apply|coated so that the thickness after hardening might become about 23 micrometers, it heat-dried at 120 degreeC, and removed the solvent. Furthermore, after the resin solution f was uniformly apply|coated so that the thickness after hardening may become about 2 micrometers - 3 micrometers, it heat-dried at 120 degreeC, and removed the solvent. In this way, after forming five layers of polyamic acid layers, heat treatment is carried out step by step from 120°C to 360°C to complete imidization, On the other hand, the thickness of the resin laminate was 50 μm, and the ratio of the thickness of the non-thermoplastic polyimide layer (polyimide layer formed from the resin solution g) to the entire resin laminate was 86%. Plate 6B.

準備單面覆銅積層板6B及電解銅箔(Rz:0.8μm、Ra:0.2μm),與實施例1同樣地製備樹脂積層體的厚度為50μm的兩面覆銅積層板6。兩面覆銅積層板6中的銅箔剝離強度超過1.0kN/m。藉由將所述兩面覆銅積層板6的銅箔蝕刻去除,而製備聚醯亞胺膜6。所述聚醯亞胺膜6的介電常數ε1為3.45,介電正切Tanδ1為0.0039,根據該些介電特性計算出的E1為0.0072。 A single-sided copper-clad laminate 6B and an electrolytic copper foil (Rz: 0.8 μm, Ra: 0.2 μm) were prepared, and a double-sided copper-clad laminate 6 having a resin laminate thickness of 50 μm was prepared in the same manner as in Example 1. The copper foil peeling strength in the double-sided copper-clad laminated board 6 exceeded 1.0 kN/m. The polyimide film 6 is prepared by etching and removing the copper foil of the double-sided copper-clad laminate 6 . The dielectric constant ε 1 of the polyimide film 6 is 3.45, the dielectric tangent Tan δ 1 is 0.0039, and the E 1 calculated according to these dielectric properties is 0.0072.

[實施例7] [Example 7]

除了使用樹脂溶液e來代替樹脂溶液b以外,與實施例6同樣地製備樹脂積層體的厚度為50μm、且非熱塑性聚醯亞胺層(由樹脂溶液g形成的聚醯亞胺層)的厚度相對於樹脂積層體整體的比率為86%的單面覆銅積層板7B。 Except for using resin solution e instead of resin solution b, the thickness of the resin laminate was 50 μm and the thickness of the non-thermoplastic polyimide layer (polyimide layer formed from resin solution g) was prepared in the same manner as in Example 6. Single-sided copper-clad laminate 7B having a ratio of 86% to the entire resin laminate.

準備單面覆銅積層板7B及電解銅箔(Rz:0.8μm、Ra:0.2μm),與實施例1同樣地製備樹脂積層體的厚度為50μm的兩面覆銅積層板7。兩面覆銅積層板7中的銅箔剝離強度超過1.0kN/m。藉由將所述兩面覆銅積層板7的銅箔蝕刻去除,而製備聚醯亞胺膜7。所述聚醯亞胺膜7的介電常數ε1為3.42,介電正切Tanδ1為0.0041,根據該些介電特性計算出的E1為0.0076。 A single-sided copper-clad laminate 7B and an electrolytic copper foil (Rz: 0.8 μm, Ra: 0.2 μm) were prepared, and a double-sided copper-clad laminate 7 having a resin laminate thickness of 50 μm was prepared in the same manner as in Example 1. The copper foil peeling strength in the double-sided copper-clad laminated board 7 exceeded 1.0 kN/m. The polyimide film 7 was prepared by etching and removing the copper foil of the double-sided copper-clad laminate 7 . The dielectric constant ε 1 of the polyimide film 7 is 3.42, the dielectric tangent Tan δ 1 is 0.0041, and the E 1 calculated according to these dielectric properties is 0.0076.

[實施例8] [Example 8]

於長條的電解銅箔(Rz:0.8μm、Ra:0.2μm)的表面,以 硬化後的厚度成為約35μm的方式均勻地塗佈樹脂溶液g後,於120℃下加熱乾燥,去除溶媒。進而,於其上以硬化後的厚度成為約2μm~3μm的方式均勻地塗佈樹脂溶液b後,於120℃下加熱乾燥,去除溶媒。進而,於其上以硬化後的厚度成為約35μm的方式均勻地塗佈樹脂溶液g後,於120℃下加熱乾燥,去除溶媒。進而,於其上以硬化後的厚度成為約2μm~3μm的方式均勻地塗佈樹脂溶液f後,於120℃下加熱乾燥,去除溶媒。如此,於形成四層聚醯胺酸層後,自120℃至360℃為止進行階段性的熱處理,完成醯亞胺化,而製備樹脂積層體的厚度為76μm、且非熱塑性聚醯亞胺層(由樹脂溶液g形成的聚醯亞胺層)的厚度相對於樹脂積層體整體的比率為93%的單面覆銅積層板8B。 On the surface of long electrolytic copper foil (Rz: 0.8μm, Ra: 0.2μm), with After the resin solution g was uniformly applied so that the thickness after curing became about 35 μm, it was heated and dried at 120° C. to remove the solvent. Furthermore, after the resin solution b was uniformly apply|coated so that the thickness after hardening may become about 2 micrometers - 3 micrometers, it heat-dried at 120 degreeC, and removed the solvent. Furthermore, after the resin solution g was uniformly apply|coated so that the thickness after hardening might become about 35 micrometers, it heat-dried at 120 degreeC, and removed the solvent. Furthermore, after the resin solution f was uniformly apply|coated so that the thickness after hardening may become about 2 micrometers - 3 micrometers, it heat-dried at 120 degreeC, and removed the solvent. In this way, after the formation of four polyamide layers, heat treatment is carried out in stages from 120°C to 360°C to complete imidization, and the thickness of the resin laminate is 76 μm, and the non-thermoplastic polyimide layer is prepared. The single-sided copper-clad laminate 8B in which the ratio of the thickness of (the polyimide layer formed from the resin solution g) to the entire resin laminate is 93%.

準備單面覆銅積層板8B及電解銅箔(Rz:0.8μm、Ra:0.2μm),與實施例1同樣地製備樹脂積層體的厚度為76μm的兩面覆銅積層板8。兩面覆銅積層板8中的銅箔剝離強度超過1.0kN/m。藉由將所述兩面覆銅積層板8的銅箔蝕刻去除,而製備聚醯亞胺膜8。所述聚醯亞胺膜8的介電常數ε1為3.34,介電正切Tanδ1為0.0037,根據該些介電特性計算出的E1為0.0068。 A single-sided copper-clad laminate 8B and an electrolytic copper foil (Rz: 0.8 μm, Ra: 0.2 μm) were prepared, and a double-sided copper-clad laminate 8 having a resin laminate thickness of 76 μm was prepared in the same manner as in Example 1. The copper foil peeling strength in the double-sided copper-clad laminated board 8 exceeds 1.0 kN/m. The polyimide film 8 is prepared by etching and removing the copper foil of the double-sided copper-clad laminate 8 . The dielectric constant ε 1 of the polyimide film 8 is 3.34, the dielectric tangent Tan δ 1 is 0.0037, and the E 1 calculated according to these dielectric properties is 0.0068.

[實施例9] [Example 9]

於長條的電解銅箔(Rz:0.8μm、Ra:0.2μm)的表面,以硬化後的厚度成為約2μm~3μm的方式均勻地塗佈樹脂溶液f後,於120℃下加熱乾燥,去除溶媒。其次,於其上以硬化後的厚度成為約21μm的方式均勻地塗佈樹脂溶液g後,於120℃下加熱 乾燥,去除溶媒。進而,於其上以硬化後的厚度成為約2μm~3μm的方式均勻地塗佈樹脂溶液b後,於120℃下加熱乾燥,去除溶媒。進而,於其上以硬化後的厚度成為約23μm的方式均勻地塗佈樹脂溶液g後,於120℃下加熱乾燥,去除溶媒。進而,於其上以硬化後的厚度成為約2μm~3μm的方式均勻地塗佈樹脂溶液b後,於120℃下加熱乾燥,去除溶媒。如此,於形成五層聚醯胺酸層後,自120℃至360℃為止進行階段性的熱處理,完成醯亞胺化,而製備樹脂積層體的厚度為50μm、非熱塑性聚醯亞胺層(由樹脂溶液g形成的聚醯亞胺層)的厚度相對於樹脂積層體整體的比率為86%的單面覆銅積層板9B。 On the surface of long electrodeposited copper foil (Rz: 0.8μm, Ra: 0.2μm), apply resin solution f uniformly so that the thickness after curing becomes about 2μm~3μm, heat and dry at 120℃, remove solvent. Next, apply the resin solution g uniformly thereon so that the thickness after curing becomes approximately 21 μm, and then heat at 120° C. Dry and remove solvent. Furthermore, after the resin solution b was uniformly apply|coated so that the thickness after hardening may become about 2 micrometers - 3 micrometers, it heat-dried at 120 degreeC, and removed the solvent. Furthermore, after the resin solution g was uniformly apply|coated so that the thickness after hardening might become about 23 micrometers, it heat-dried at 120 degreeC, and removed the solvent. Furthermore, after the resin solution b was uniformly apply|coated so that the thickness after hardening may become about 2 micrometers - 3 micrometers, it heat-dried at 120 degreeC, and removed the solvent. In this way, after forming five layers of polyamic acid layers, stepwise heat treatment is carried out from 120°C to 360°C to complete imidization, and a non-thermoplastic polyimide layer ( A single-sided copper-clad laminate 9B in which the ratio of the thickness of the polyimide layer formed from the resin solution g to the entire resin laminate was 86%.

單面覆銅積層板9B中的銅箔剝離強度超過1.0kN/m。藉由將所述單面覆銅積層板9B的銅箔蝕刻去除,而製備聚醯亞胺膜9。所述聚醯亞胺膜9的介電常數ε1為3.44,介電正切Tanδ1為0.0043,根據該些介電特性計算出的E1為0.0080。 The copper foil peeling strength in the single-sided copper-clad laminated board 9B exceeded 1.0 kN/m. The polyimide film 9 was prepared by etching and removing the copper foil of the single-sided copper-clad laminate 9B. The dielectric constant ε 1 of the polyimide film 9 is 3.44, the dielectric tangent Tan δ 1 is 0.0043, and the E 1 calculated according to these dielectric properties is 0.0080.

[實施例10] [Example 10]

與實施例4同樣地準備兩個單面覆銅積層板4B,於聚醯亞胺層面彼此貼合,同時在一對加熱輥之間以1m/分鐘的速度連續地供給並進行熱壓接(輥表面溫度:390℃、輥間的線壓:134kN/m),藉此製備樹脂積層體的厚度為152μm的兩面覆銅積層板10。兩面覆銅積層板10中的熱壓接面的剝離強度超過1.0kN/m。藉由將所述兩面覆銅積層板10的銅箔蝕刻去除,而製備聚醯亞胺膜10。所述聚醯亞胺膜10的介電常數ε1為3.20,介電正切Tanδ1為0.0032, 根據該些介電特性計算出的E1為0.0057。 Two single-sided copper-clad laminates 4B were prepared in the same manner as in Example 4, and were bonded to each other on the polyimide layer, while being continuously supplied between a pair of heating rollers at a speed of 1 m/min and subjected to thermocompression bonding ( Roll surface temperature: 390° C., linear pressure between rolls: 134 kN/m), thereby preparing a double-sided copper-clad laminate 10 with a resin laminate thickness of 152 μm. The peel strength of the thermocompression bonding surface in the double-sided copper-clad laminate 10 exceeds 1.0 kN/m. The polyimide film 10 is prepared by etching and removing the copper foil of the double-sided copper-clad laminate 10 . The dielectric constant ε 1 of the polyimide film 10 is 3.20, the dielectric tangent Tan δ 1 is 0.0032, and the E 1 calculated according to these dielectric properties is 0.0057.

[比較例1] [Comparative example 1]

於長條的電解銅箔(Rz:0.8μm、Ra:0.2μm)的表面,以硬化後的厚度成為約2μm~3μm的方式均勻地塗佈樹脂溶液c後,於120℃下加熱乾燥,去除溶媒。其次,於其上以硬化後的厚度成為約21μm的方式均勻地塗佈樹脂溶液d後,於120℃下加熱乾燥,去除溶媒。進而,於其上以硬化後的厚度成為約2μm~3μm的方式均勻地塗佈樹脂溶液e後,於120℃下加熱乾燥,去除溶媒。進而,於其上以硬化後的厚度成為約2μm~3μm的方式均勻地塗佈樹脂溶液e後,於120℃下加熱乾燥,去除溶媒。其次,於其上以硬化後的厚度成為約21μm的方式均勻地塗佈樹脂溶液d後,於120℃下加熱乾燥,去除溶媒。進而,於其上以硬化後的厚度成為約2μm~3μm的方式均勻地塗佈樹脂溶液c後,於120℃下加熱乾燥,去除溶媒。如此,於形成六層聚醯胺酸層後,自120℃至360℃為止進行階段性的熱處理,完成醯亞胺化,而製備樹脂積層體的厚度為50μm、且非熱塑性聚醯亞胺層(由樹脂溶液d形成的聚醯亞胺層)的厚度相對於樹脂積層體整體的比率為82%的單面覆銅積層板1'B。 On the surface of long electrodeposited copper foil (Rz: 0.8μm, Ra: 0.2μm), apply resin solution c uniformly so that the thickness after curing becomes about 2μm~3μm, heat and dry at 120℃, remove solvent. Next, the resin solution d was uniformly applied thereon so that the thickness after curing was about 21 μm, and then heated and dried at 120° C. to remove the solvent. Furthermore, after the resin solution e was uniformly apply|coated so that the thickness after hardening may become about 2 micrometers - 3 micrometers, it heat-dried at 120 degreeC, and removed the solvent. Furthermore, after the resin solution e was uniformly apply|coated so that the thickness after hardening may become about 2 micrometers - 3 micrometers, it heat-dried at 120 degreeC, and removed the solvent. Next, the resin solution d was uniformly applied thereon so that the thickness after curing was about 21 μm, and then heated and dried at 120° C. to remove the solvent. Furthermore, after the resin solution c was uniformly apply|coated so that the thickness after hardening may become about 2 micrometers - 3 micrometers, it heat-dried at 120 degreeC, and removed the solvent. In this way, after the six polyamide layers are formed, heat treatment is carried out in stages from 120°C to 360°C to complete the imidization, and the thickness of the resin laminate is 50 μm, and the non-thermoplastic polyimide layer is prepared. The single-sided copper-clad laminate 1'B in which the ratio of the thickness of (the polyimide layer formed from the resin solution d) to the entire resin laminate is 82%.

同時在一對加熱輥之間以4m/分鐘的速度連續地供給單面覆銅積層板1'B的聚醯亞胺層與電解銅箔(Rz:0.8μm、Ra:0.2μm)並進行熱壓接(輥表面溫度:390℃、輥間的線壓:134kN/m),藉此製備樹脂積層體的厚度為50μm的兩面覆銅積層板 1'。藉由將所述兩面覆銅積層板1'的銅箔蝕刻去除,而製備聚醯亞胺膜1'。所述聚醯亞胺膜1'的介電常數ε1為3.08,介電正切Tanδ1為0.0071,根據該些介電特性計算出的E1為0.0125。 At the same time, the polyimide layer and the electrolytic copper foil (Rz: 0.8 μm, Ra: 0.2 μm) of the single-sided copper-clad laminate 1'B are continuously supplied between a pair of heating rollers at a speed of 4 m/min and heated. Press bonding (roll surface temperature: 390° C., linear pressure between rolls: 134 kN/m) was used to prepare a double-sided copper-clad laminate 1 ′ having a resin laminate thickness of 50 μm. The polyimide film 1' is prepared by etching and removing the copper foil of the double-sided copper-clad laminate 1'. The dielectric constant ε 1 of the polyimide film 1' is 3.08, the dielectric tangent Tan δ 1 is 0.0071, and the E 1 calculated according to these dielectric properties is 0.0125.

以上,以例示的目的來對本發明的實施形態進行了詳細說明,但本發明並不受到所述實施形態制約。 As mentioned above, although the embodiment of this invention was demonstrated in detail for the purpose of illustration, this invention is not restricted by the said embodiment.

10A、10B:銅箔層 10A, 10B: copper foil layer

20A、20B、40A、40B:熱塑性聚醯亞胺層 20A, 20B, 40A, 40B: thermoplastic polyimide layer

30A、30B:非熱塑性聚醯亞胺層 30A, 30B: Non-thermoplastic polyimide layer

50:樹脂積層體 50: resin laminate

100:兩面CCL 100: CCL on both sides

Claims (6)

一種覆金屬積層板,其特徵在於,包括:含有多個聚醯亞胺層的樹脂積層體,所述樹脂積層體以其厚度方向的中心為基準,具有與厚度方向對稱的層結構,且位於厚度方向的中心的層或者鄰接於所述厚度方向的中心的兩層為玻璃轉移溫度為360℃以下的熱塑性聚醯亞胺;以及積層於所述樹脂積層體的至少單面的金屬層,且所述樹脂積層體滿足以下i)~iv)的條件:i)整體的厚度為76μm~200μm的範圍內;ii)包含與所述金屬層接觸的第一聚醯亞胺層、以及直接或間接地積層於所述第一聚醯亞胺層上的第二聚醯亞胺層;iii)所述第二聚醯亞胺層的厚度相對於所述樹脂積層體的整體的厚度的比率為70%~97%的範圍內;iv)基於下述數式(a)計算出的作為表示介電特性的指標的E1值未滿0.009:
Figure 108126128-A0305-02-0052-5
[此處,ε1表示藉由分離介電質共振器(SPDR)進行測定的10GHz下的介電常數,Tanδ1表示藉由分離介電質共振器(SPDR)進行測定的10GHz下的介電正切]。
A metal-clad laminate, characterized in that it includes: a resin laminate containing a plurality of polyimide layers, the resin laminate has a layer structure symmetrical to the thickness direction based on the center in the thickness direction, and is located at The layer at the center in the thickness direction or the two layers adjacent to the center in the thickness direction are thermoplastic polyimides with a glass transition temperature of 360° C. or lower; and a metal layer laminated on at least one side of the resin laminate, and The resin laminate satisfies the following conditions i) to iv): i) the overall thickness is in the range of 76 μm to 200 μm; ii) includes a first polyimide layer in contact with the metal layer, and directly or indirectly The second polyimide layer laminated on the first polyimide layer; iii) The ratio of the thickness of the second polyimide layer to the thickness of the entire resin laminate is 70 %~97%; iv) The E1 value calculated based on the following formula (a) as an indicator of dielectric properties is less than 0.009:
Figure 108126128-A0305-02-0052-5
[Here, ε1 represents the dielectric constant at 10 GHz measured by a split dielectric resonator (SPDR), and Tanδ1 represents the dielectric constant at 10 GHz measured by a split dielectric resonator (SPDR). tangent].
如申請專利範圍第1項所述的覆金屬積層板,其中構成 所述第二聚醯亞胺層的聚醯亞胺是使酸酐成分與二胺成分反應而獲得的非熱塑性聚醯亞胺,且包含四羧酸殘基及二胺殘基,且相對於所述四羧酸殘基的100莫耳份,由3,3',4,4'-聯苯四羧酸二酐(BPDA)所衍生的四羧酸殘基(BPDA殘基)及由1,4-伸苯基雙(偏苯三甲酸單酯)二酐(TAHQ)所衍生的四羧酸殘基(TAHQ殘基)中的至少一種、以及由均苯四甲酸二酐(PMDA)所衍生的四羧酸殘基(PMDA殘基)及由2,3,6,7-萘四羧酸二酐(NTCDA)所衍生的四羧酸殘基(NTCDA殘基)中的至少一種的合計為80莫耳份以上,所述BPDA殘基及所述TAHQ殘基中的至少一種、與所述PMDA殘基及所述NTCDA殘基中的至少一種的莫耳比{(BPDA殘基+TAHQ殘基)/(PMDA殘基+NTCDA殘基)}處於0.4~1.5的範圍內。 The metal-clad laminate as described in item 1 of the scope of the patent application, wherein the composition The polyimide of the second polyimide layer is a non-thermoplastic polyimide obtained by reacting an acid anhydride component with a diamine component, and contains tetracarboxylic acid residues and diamine residues, and is relatively 100 molar parts of the tetracarboxylic acid residues, tetracarboxylic acid residues (BPDA residues) derived from 3,3',4,4'-biphenyltetracarboxylic dianhydride (BPDA) and 1, At least one of the tetracarboxylic acid residues (TAHQ residues) derived from 4-phenylene bis(trimellitic acid monoester) dianhydride (TAHQ), and pyromellitic dianhydride (PMDA) The sum of at least one of tetracarboxylic acid residues (PMDA residues) and tetracarboxylic acid residues (NTCDA residues) derived from 2,3,6,7-naphthalene tetracarboxylic dianhydride (NTCDA) is More than 80 mole parts, the mol ratio of at least one of the BPDA residue and the TAHQ residue to at least one of the PMDA residue and the NTCDA residue {(BPDA residue+TAHQ residue base)/(PMDA residue+NTCDA residue)} in the range of 0.4~1.5. 如申請專利範圍第2項所述的覆金屬積層板,其中相對於所有二胺成分,所述二胺成分含有80莫耳%以上的4,4'-二胺基-2,2'-二甲基聯苯(m-TB)。 The metal-clad laminate described in claim 2, wherein the diamine component contains 80 mol% or more of 4,4'-diamino-2,2'-diamine relative to all diamine components. Methylbiphenyl (m-TB). 如申請專利範圍第1項所述的覆金屬積層板,其中所述樹脂積層體具有自所述金屬層側起分別至少依次積層有所述第一聚醯亞胺層、所述第二聚醯亞胺層的結構。 The metal-clad laminate according to claim 1, wherein the resin laminate has at least the first polyimide layer and the second polyimide layer stacked in sequence from the side of the metal layer. Structure of the imine layer. 如申請專利範圍第1項所述的覆金屬積層板,其中所述樹脂積層體具有包含至少五層以上的聚醯亞胺層的積層結構。 The metal-clad laminate according to claim 1, wherein the resin laminate has a laminate structure including at least five or more polyimide layers. 一種電路基板,是對如申請專利範圍第1項所述的覆金 屬積層板的所述金屬層進行配線電路加工而成。A circuit substrate, which is a gold-coated substrate as described in item 1 of the scope of the patent application The metal layer belonging to the laminate is processed by wiring circuits.
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