JP6603032B2 - Copper-clad laminate and circuit board - Google Patents
Copper-clad laminate and circuit board Download PDFInfo
- Publication number
- JP6603032B2 JP6603032B2 JP2015068744A JP2015068744A JP6603032B2 JP 6603032 B2 JP6603032 B2 JP 6603032B2 JP 2015068744 A JP2015068744 A JP 2015068744A JP 2015068744 A JP2015068744 A JP 2015068744A JP 6603032 B2 JP6603032 B2 JP 6603032B2
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- JP
- Japan
- Prior art keywords
- polyimide
- polyamic acid
- acid solution
- heat treatment
- copper foil
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 147
- 229920001721 polyimide Polymers 0.000 claims description 126
- 239000004642 Polyimide Substances 0.000 claims description 116
- 239000011889 copper foil Substances 0.000 claims description 99
- 229910052802 copper Inorganic materials 0.000 claims description 49
- 239000010949 copper Substances 0.000 claims description 49
- 238000012545 processing Methods 0.000 claims description 42
- -1 tetracarboxylic anhydride Chemical class 0.000 claims description 14
- 150000004985 diamines Chemical class 0.000 claims description 7
- 150000007824 aliphatic compounds Chemical class 0.000 claims description 4
- 150000001875 compounds Chemical class 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 description 182
- 229920005575 poly(amic acid) Polymers 0.000 description 127
- 239000010410 layer Substances 0.000 description 82
- 239000002904 solvent Substances 0.000 description 74
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 44
- 238000001035 drying Methods 0.000 description 39
- 238000012360 testing method Methods 0.000 description 39
- 230000015572 biosynthetic process Effects 0.000 description 24
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 description 23
- GTDPSWPPOUPBNX-UHFFFAOYSA-N ac1mqpva Chemical compound CC12C(=O)OC(=O)C1(C)C1(C)C2(C)C(=O)OC1=O GTDPSWPPOUPBNX-UHFFFAOYSA-N 0.000 description 23
- 239000012790 adhesive layer Substances 0.000 description 23
- WKDNYTOXBCRNPV-UHFFFAOYSA-N bpda Chemical compound C1=C2C(=O)OC(=O)C2=CC(C=2C=C3C(=O)OC(C3=CC=2)=O)=C1 WKDNYTOXBCRNPV-UHFFFAOYSA-N 0.000 description 23
- 229910052757 nitrogen Inorganic materials 0.000 description 22
- 238000003786 synthesis reaction Methods 0.000 description 22
- 238000004090 dissolution Methods 0.000 description 21
- VLDPXPPHXDGHEW-UHFFFAOYSA-N 1-chloro-2-dichlorophosphoryloxybenzene Chemical compound ClC1=CC=CC=C1OP(Cl)(Cl)=O VLDPXPPHXDGHEW-UHFFFAOYSA-N 0.000 description 20
- 239000011347 resin Substances 0.000 description 16
- 229920005989 resin Polymers 0.000 description 16
- 238000000034 method Methods 0.000 description 12
- 238000004519 manufacturing process Methods 0.000 description 11
- 239000002243 precursor Substances 0.000 description 10
- XUSNPFGLKGCWGN-UHFFFAOYSA-N 3-[4-(3-aminopropyl)piperazin-1-yl]propan-1-amine Chemical compound NCCCN1CCN(CCCN)CC1 XUSNPFGLKGCWGN-UHFFFAOYSA-N 0.000 description 9
- 230000000052 comparative effect Effects 0.000 description 9
- 238000005259 measurement Methods 0.000 description 9
- 230000007774 longterm Effects 0.000 description 8
- 239000002356 single layer Substances 0.000 description 7
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 6
- 239000002253 acid Substances 0.000 description 6
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- HLBLWEWZXPIGSM-UHFFFAOYSA-N 4-Aminophenyl ether Chemical compound C1=CC(N)=CC=C1OC1=CC=C(N)C=C1 HLBLWEWZXPIGSM-UHFFFAOYSA-N 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 5
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 5
- 238000007788 roughening Methods 0.000 description 5
- QYIMZXITLDTULQ-UHFFFAOYSA-N 4-(4-amino-2-methylphenyl)-3-methylaniline Chemical group CC1=CC(N)=CC=C1C1=CC=C(N)C=C1C QYIMZXITLDTULQ-UHFFFAOYSA-N 0.000 description 4
- WUPRYUDHUFLKFL-UHFFFAOYSA-N 4-[3-(4-aminophenoxy)phenoxy]aniline Chemical compound C1=CC(N)=CC=C1OC1=CC=CC(OC=2C=CC(N)=CC=2)=C1 WUPRYUDHUFLKFL-UHFFFAOYSA-N 0.000 description 4
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 4
- 230000001070 adhesive effect Effects 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000000178 monomer Substances 0.000 description 4
- 239000002365 multiple layer Substances 0.000 description 4
- 239000002994 raw material Substances 0.000 description 4
- 229920006259 thermoplastic polyimide Polymers 0.000 description 4
- CBCKQZAAMUWICA-UHFFFAOYSA-N 1,4-phenylenediamine Chemical compound NC1=CC=C(N)C=C1 CBCKQZAAMUWICA-UHFFFAOYSA-N 0.000 description 3
- JCRRFJIVUPSNTA-UHFFFAOYSA-N 4-[4-(4-aminophenoxy)phenoxy]aniline Chemical compound C1=CC(N)=CC=C1OC(C=C1)=CC=C1OC1=CC=C(N)C=C1 JCRRFJIVUPSNTA-UHFFFAOYSA-N 0.000 description 3
- QQGYZOYWNCKGEK-UHFFFAOYSA-N 5-[(1,3-dioxo-2-benzofuran-5-yl)oxy]-2-benzofuran-1,3-dione Chemical compound C1=C2C(=O)OC(=O)C2=CC(OC=2C=C3C(=O)OC(C3=CC=2)=O)=C1 QQGYZOYWNCKGEK-UHFFFAOYSA-N 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 125000001931 aliphatic group Chemical group 0.000 description 3
- 150000004984 aromatic diamines Chemical class 0.000 description 3
- 239000012298 atmosphere Substances 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 239000000539 dimer Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 230000003746 surface roughness Effects 0.000 description 3
- 125000006158 tetracarboxylic acid group Chemical group 0.000 description 3
- KMKWGXGSGPYISJ-UHFFFAOYSA-N 4-[4-[2-[4-(4-aminophenoxy)phenyl]propan-2-yl]phenoxy]aniline Chemical compound C=1C=C(OC=2C=CC(N)=CC=2)C=CC=1C(C)(C)C(C=C1)=CC=C1OC1=CC=C(N)C=C1 KMKWGXGSGPYISJ-UHFFFAOYSA-N 0.000 description 2
- VQVIHDPBMFABCQ-UHFFFAOYSA-N 5-(1,3-dioxo-2-benzofuran-5-carbonyl)-2-benzofuran-1,3-dione Chemical compound C1=C2C(=O)OC(=O)C2=CC(C(C=2C=C3C(=O)OC(=O)C3=CC=2)=O)=C1 VQVIHDPBMFABCQ-UHFFFAOYSA-N 0.000 description 2
- ZHBXLZQQVCDGPA-UHFFFAOYSA-N 5-[(1,3-dioxo-2-benzofuran-5-yl)sulfonyl]-2-benzofuran-1,3-dione Chemical compound C1=C2C(=O)OC(=O)C2=CC(S(=O)(=O)C=2C=C3C(=O)OC(C3=CC=2)=O)=C1 ZHBXLZQQVCDGPA-UHFFFAOYSA-N 0.000 description 2
- 229920000106 Liquid crystal polymer Polymers 0.000 description 2
- 239000004977 Liquid-crystal polymers (LCPs) Substances 0.000 description 2
- GLUUGHFHXGJENI-UHFFFAOYSA-N Piperazine Chemical compound C1CNCCN1 GLUUGHFHXGJENI-UHFFFAOYSA-N 0.000 description 2
- 239000004952 Polyamide Substances 0.000 description 2
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 150000008065 acid anhydrides Chemical class 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 125000003118 aryl group Chemical group 0.000 description 2
- ZVSKZLHKADLHSD-UHFFFAOYSA-N benzanilide Chemical compound C=1C=CC=CC=1C(=O)NC1=CC=CC=C1 ZVSKZLHKADLHSD-UHFFFAOYSA-N 0.000 description 2
- RWCCWEUUXYIKHB-UHFFFAOYSA-N benzophenone Chemical compound C=1C=CC=CC=1C(=O)C1=CC=CC=C1 RWCCWEUUXYIKHB-UHFFFAOYSA-N 0.000 description 2
- 239000012965 benzophenone Substances 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 2
- 230000002500 effect on skin Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- NIHNNTQXNPWCJQ-UHFFFAOYSA-N fluorene Chemical compound C1=CC=C2CC3=CC=CC=C3C2=C1 NIHNNTQXNPWCJQ-UHFFFAOYSA-N 0.000 description 2
- 239000011888 foil Substances 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 125000005462 imide group Chemical group 0.000 description 2
- 230000001771 impaired effect Effects 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 229920002647 polyamide Polymers 0.000 description 2
- NSGXIBWMJZWTPY-UHFFFAOYSA-N 1,1,1,3,3,3-hexafluoropropane Chemical compound FC(F)(F)CC(F)(F)F NSGXIBWMJZWTPY-UHFFFAOYSA-N 0.000 description 1
- YTCGLFCOUJIOQH-UHFFFAOYSA-N 1,3,4-oxadiazole-2,5-diamine Chemical compound NC1=NN=C(N)O1 YTCGLFCOUJIOQH-UHFFFAOYSA-N 0.000 description 1
- WZCQRUWWHSTZEM-UHFFFAOYSA-N 1,3-phenylenediamine Chemical compound NC1=CC=CC(N)=C1 WZCQRUWWHSTZEM-UHFFFAOYSA-N 0.000 description 1
- IRPGOXJVTQTAAN-UHFFFAOYSA-N 2,2,3,3,3-pentafluoropropanal Chemical compound FC(F)(F)C(F)(F)C=O IRPGOXJVTQTAAN-UHFFFAOYSA-N 0.000 description 1
- VOZKAJLKRJDJLL-UHFFFAOYSA-N 2,4-diaminotoluene Chemical compound CC1=CC=C(N)C=C1N VOZKAJLKRJDJLL-UHFFFAOYSA-N 0.000 description 1
- BWAPJIHJXDYDPW-UHFFFAOYSA-N 2,5-dimethyl-p-phenylenediamine Chemical compound CC1=CC(N)=C(C)C=C1N BWAPJIHJXDYDPW-UHFFFAOYSA-N 0.000 description 1
- MJAVQHPPPBDYAN-UHFFFAOYSA-N 2,6-dimethylbenzene-1,4-diamine Chemical compound CC1=CC(N)=CC(C)=C1N MJAVQHPPPBDYAN-UHFFFAOYSA-N 0.000 description 1
- JZWGLBCZWLGCDT-UHFFFAOYSA-N 2,7-dichloronaphthalene-1,4,5,8-tetracarboxylic acid Chemical compound ClC1=CC(C(O)=O)=C2C(C(=O)O)=CC(Cl)=C(C(O)=O)C2=C1C(O)=O JZWGLBCZWLGCDT-UHFFFAOYSA-N 0.000 description 1
- ZGDMDBHLKNQPSD-UHFFFAOYSA-N 2-amino-5-(4-amino-3-hydroxyphenyl)phenol Chemical group C1=C(O)C(N)=CC=C1C1=CC=C(N)C(O)=C1 ZGDMDBHLKNQPSD-UHFFFAOYSA-N 0.000 description 1
- FRWYFWZENXDZMU-UHFFFAOYSA-N 2-iodoquinoline Chemical compound C1=CC=CC2=NC(I)=CC=C21 FRWYFWZENXDZMU-UHFFFAOYSA-N 0.000 description 1
- JRBJSXQPQWSCCF-UHFFFAOYSA-N 3,3'-Dimethoxybenzidine Chemical compound C1=C(N)C(OC)=CC(C=2C=C(OC)C(N)=CC=2)=C1 JRBJSXQPQWSCCF-UHFFFAOYSA-N 0.000 description 1
- NUIURNJTPRWVAP-UHFFFAOYSA-N 3,3'-Dimethylbenzidine Chemical group C1=C(N)C(C)=CC(C=2C=C(C)C(N)=CC=2)=C1 NUIURNJTPRWVAP-UHFFFAOYSA-N 0.000 description 1
- CEPWHUGCPFOBHV-UHFFFAOYSA-N 3-(1-phenylcyclohexa-2,4-dien-1-yl)oxyaniline Chemical group NC=1C=C(OC2(CC=CC=C2)C2=CC=CC=C2)C=CC=1 CEPWHUGCPFOBHV-UHFFFAOYSA-N 0.000 description 1
- SMDGQEQWSSYZKX-UHFFFAOYSA-N 3-(2,3-dicarboxyphenoxy)phthalic acid Chemical compound OC(=O)C1=CC=CC(OC=2C(=C(C(O)=O)C=CC=2)C(O)=O)=C1C(O)=O SMDGQEQWSSYZKX-UHFFFAOYSA-N 0.000 description 1
- GWHLJVMSZRKEAQ-UHFFFAOYSA-N 3-(2,3-dicarboxyphenyl)phthalic acid Chemical compound OC(=O)C1=CC=CC(C=2C(=C(C(O)=O)C=CC=2)C(O)=O)=C1C(O)=O GWHLJVMSZRKEAQ-UHFFFAOYSA-N 0.000 description 1
- NBAUUNCGSMAPFM-UHFFFAOYSA-N 3-(3,4-dicarboxyphenyl)phthalic acid Chemical compound C1=C(C(O)=O)C(C(=O)O)=CC=C1C1=CC=CC(C(O)=O)=C1C(O)=O NBAUUNCGSMAPFM-UHFFFAOYSA-N 0.000 description 1
- NDXGRHCEHPFUSU-UHFFFAOYSA-N 3-(3-aminophenyl)aniline Chemical group NC1=CC=CC(C=2C=C(N)C=CC=2)=C1 NDXGRHCEHPFUSU-UHFFFAOYSA-N 0.000 description 1
- LJGHYPLBDBRCRZ-UHFFFAOYSA-N 3-(3-aminophenyl)sulfonylaniline Chemical compound NC1=CC=CC(S(=O)(=O)C=2C=C(N)C=CC=2)=C1 LJGHYPLBDBRCRZ-UHFFFAOYSA-N 0.000 description 1
- CKOFBUUFHALZGK-UHFFFAOYSA-N 3-[(3-aminophenyl)methyl]aniline Chemical compound NC1=CC=CC(CC=2C=C(N)C=CC=2)=C1 CKOFBUUFHALZGK-UHFFFAOYSA-N 0.000 description 1
- DKKYOQYISDAQER-UHFFFAOYSA-N 3-[3-(3-aminophenoxy)phenoxy]aniline Chemical compound NC1=CC=CC(OC=2C=C(OC=3C=C(N)C=CC=3)C=CC=2)=C1 DKKYOQYISDAQER-UHFFFAOYSA-N 0.000 description 1
- POXPSTWTPRGRDO-UHFFFAOYSA-N 3-[4-(3-aminophenyl)phenyl]aniline Chemical group NC1=CC=CC(C=2C=CC(=CC=2)C=2C=C(N)C=CC=2)=C1 POXPSTWTPRGRDO-UHFFFAOYSA-N 0.000 description 1
- NYRFBMFAUFUULG-UHFFFAOYSA-N 3-[4-[2-[4-(3-aminophenoxy)phenyl]propan-2-yl]phenoxy]aniline Chemical compound C=1C=C(OC=2C=C(N)C=CC=2)C=CC=1C(C)(C)C(C=C1)=CC=C1OC1=CC=CC(N)=C1 NYRFBMFAUFUULG-UHFFFAOYSA-N 0.000 description 1
- WCXGOVYROJJXHA-UHFFFAOYSA-N 3-[4-[4-(3-aminophenoxy)phenyl]sulfonylphenoxy]aniline Chemical compound NC1=CC=CC(OC=2C=CC(=CC=2)S(=O)(=O)C=2C=CC(OC=3C=C(N)C=CC=3)=CC=2)=C1 WCXGOVYROJJXHA-UHFFFAOYSA-N 0.000 description 1
- WEKOSTNPNAWTSA-UHFFFAOYSA-N 3-benzhydryloxyphthalic acid Chemical compound OC(=O)C1=CC=CC(OC(C=2C=CC=CC=2)C=2C=CC=CC=2)=C1C(O)=O WEKOSTNPNAWTSA-UHFFFAOYSA-N 0.000 description 1
- WECDUOXQLAIPQW-UHFFFAOYSA-N 4,4'-Methylene bis(2-methylaniline) Chemical compound C1=C(N)C(C)=CC(CC=2C=C(C)C(N)=CC=2)=C1 WECDUOXQLAIPQW-UHFFFAOYSA-N 0.000 description 1
- ICNFHJVPAJKPHW-UHFFFAOYSA-N 4,4'-Thiodianiline Chemical compound C1=CC(N)=CC=C1SC1=CC=C(N)C=C1 ICNFHJVPAJKPHW-UHFFFAOYSA-N 0.000 description 1
- YBRVSVVVWCFQMG-UHFFFAOYSA-N 4,4'-diaminodiphenylmethane Chemical compound C1=CC(N)=CC=C1CC1=CC=C(N)C=C1 YBRVSVVVWCFQMG-UHFFFAOYSA-N 0.000 description 1
- QGRZMPCVIHBQOE-UHFFFAOYSA-N 4,8-dimethyl-1,2,3,5,6,7-hexahydronaphthalene-1,2,5,6-tetracarboxylic acid Chemical compound OC(=O)C1C(C(O)=O)CC(C)=C2C(C(O)=O)C(C(O)=O)CC(C)=C21 QGRZMPCVIHBQOE-UHFFFAOYSA-N 0.000 description 1
- LFBALUPVVFCEPA-UHFFFAOYSA-N 4-(3,4-dicarboxyphenyl)phthalic acid Chemical compound C1=C(C(O)=O)C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)C(C(O)=O)=C1 LFBALUPVVFCEPA-UHFFFAOYSA-N 0.000 description 1
- JSKKUFIMCFTTRV-UHFFFAOYSA-N 4-(4-phenylphenoxy)aniline Chemical group C1=CC(N)=CC=C1OC1=CC=C(C=2C=CC=CC=2)C=C1 JSKKUFIMCFTTRV-UHFFFAOYSA-N 0.000 description 1
- KHYXYOGWAIYVBD-UHFFFAOYSA-N 4-(4-propylphenoxy)aniline Chemical compound C1=CC(CCC)=CC=C1OC1=CC=C(N)C=C1 KHYXYOGWAIYVBD-UHFFFAOYSA-N 0.000 description 1
- OMHOXRVODFQGCA-UHFFFAOYSA-N 4-[(4-amino-3,5-dimethylphenyl)methyl]-2,6-dimethylaniline Chemical group CC1=C(N)C(C)=CC(CC=2C=C(C)C(N)=C(C)C=2)=C1 OMHOXRVODFQGCA-UHFFFAOYSA-N 0.000 description 1
- DZIHTWJGPDVSGE-UHFFFAOYSA-N 4-[(4-aminocyclohexyl)methyl]cyclohexan-1-amine Chemical compound C1CC(N)CCC1CC1CCC(N)CC1 DZIHTWJGPDVSGE-UHFFFAOYSA-N 0.000 description 1
- HSBOCPVKJMBWTF-UHFFFAOYSA-N 4-[1-(4-aminophenyl)ethyl]aniline Chemical compound C=1C=C(N)C=CC=1C(C)C1=CC=C(N)C=C1 HSBOCPVKJMBWTF-UHFFFAOYSA-N 0.000 description 1
- TZARWMRCCSKGFP-UHFFFAOYSA-N 4-[2-(3,4-dicarboxyphenyl)-1,1,1,3-tetrafluoropropan-2-yl]phthalic acid Chemical compound C1=C(C(O)=O)C(C(=O)O)=CC=C1C(CF)(C(F)(F)F)C1=CC=C(C(O)=O)C(C(O)=O)=C1 TZARWMRCCSKGFP-UHFFFAOYSA-N 0.000 description 1
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- ZNVDOKOOMPHOSP-UHFFFAOYSA-N 4-amino-n-(4-amino-2-methoxyphenyl)benzamide Chemical compound COC1=CC(N)=CC=C1NC(=O)C1=CC=C(N)C=C1 ZNVDOKOOMPHOSP-UHFFFAOYSA-N 0.000 description 1
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- IIEKUGPEYLGWQQ-UHFFFAOYSA-N 5-[4-(4-amino-2-methylpentyl)phenyl]-4-methylpentan-2-amine Chemical compound CC(N)CC(C)CC1=CC=C(CC(C)CC(C)N)C=C1 IIEKUGPEYLGWQQ-UHFFFAOYSA-N 0.000 description 1
- KLZUFWVZNOTSEM-UHFFFAOYSA-K Aluminum fluoride Inorganic materials F[Al](F)F KLZUFWVZNOTSEM-UHFFFAOYSA-K 0.000 description 1
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- MQJKPEGWNLWLTK-UHFFFAOYSA-N Dapsone Chemical compound C1=CC(N)=CC=C1S(=O)(=O)C1=CC=C(N)C=C1 MQJKPEGWNLWLTK-UHFFFAOYSA-N 0.000 description 1
- OTMSDBZUPAUEDD-UHFFFAOYSA-N Ethane Chemical compound CC OTMSDBZUPAUEDD-UHFFFAOYSA-N 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- FDLQZKYLHJJBHD-UHFFFAOYSA-N [3-(aminomethyl)phenyl]methanamine Chemical compound NCC1=CC=CC(CN)=C1 FDLQZKYLHJJBHD-UHFFFAOYSA-N 0.000 description 1
- ISKQADXMHQSTHK-UHFFFAOYSA-N [4-(aminomethyl)phenyl]methanamine Chemical compound NCC1=CC=C(CN)C=C1 ISKQADXMHQSTHK-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 125000003277 amino group Chemical group 0.000 description 1
- 125000004202 aminomethyl group Chemical group [H]N([H])C([H])([H])* 0.000 description 1
- 150000008064 anhydrides Chemical class 0.000 description 1
- MRSWDOKCESOYBI-UHFFFAOYSA-N anthracene-2,3,6,7-tetracarboxylic acid Chemical compound OC(=O)C1=C(C(O)=O)C=C2C=C(C=C(C(C(=O)O)=C3)C(O)=O)C3=CC2=C1 MRSWDOKCESOYBI-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- HFACYLZERDEVSX-UHFFFAOYSA-N benzidine Chemical compound C1=CC(N)=CC=C1C1=CC=C(N)C=C1 HFACYLZERDEVSX-UHFFFAOYSA-N 0.000 description 1
- LTPBRCUWZOMYOC-UHFFFAOYSA-N beryllium oxide Inorganic materials O=[Be] LTPBRCUWZOMYOC-UHFFFAOYSA-N 0.000 description 1
- 239000004305 biphenyl Substances 0.000 description 1
- 235000010290 biphenyl Nutrition 0.000 description 1
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 description 1
- 229910001634 calcium fluoride Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 1
- 125000002843 carboxylic acid group Chemical group 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010924 continuous production Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- LIPIGIIYPAXVFF-UHFFFAOYSA-N copper N,N-dimethylacetamide Chemical compound [Cu].CC(=O)N(C)C LIPIGIIYPAXVFF-UHFFFAOYSA-N 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- WOSVXXBNNCUXMT-UHFFFAOYSA-N cyclopentane-1,2,3,4-tetracarboxylic acid Chemical compound OC(=O)C1CC(C(O)=O)C(C(O)=O)C1C(O)=O WOSVXXBNNCUXMT-UHFFFAOYSA-N 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- BXKDSDJJOVIHMX-UHFFFAOYSA-N edrophonium chloride Chemical compound [Cl-].CC[N+](C)(C)C1=CC=CC(O)=C1 BXKDSDJJOVIHMX-UHFFFAOYSA-N 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- ANSXAPJVJOKRDJ-UHFFFAOYSA-N furo[3,4-f][2]benzofuran-1,3,5,7-tetrone Chemical compound C1=C2C(=O)OC(=O)C2=CC2=C1C(=O)OC2=O ANSXAPJVJOKRDJ-UHFFFAOYSA-N 0.000 description 1
- 238000005227 gel permeation chromatography Methods 0.000 description 1
- 230000009477 glass transition Effects 0.000 description 1
- 238000007731 hot pressing Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 150000003949 imides Chemical class 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 230000010365 information processing Effects 0.000 description 1
- 239000011256 inorganic filler Substances 0.000 description 1
- 229910003475 inorganic filler Inorganic materials 0.000 description 1
- 230000009878 intermolecular interaction Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 229940018564 m-phenylenediamine Drugs 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- OBKARQMATMRWQZ-UHFFFAOYSA-N naphthalene-1,2,5,6-tetracarboxylic acid Chemical compound OC(=O)C1=C(C(O)=O)C=CC2=C(C(O)=O)C(C(=O)O)=CC=C21 OBKARQMATMRWQZ-UHFFFAOYSA-N 0.000 description 1
- HCSCOKCINFFGRU-UHFFFAOYSA-N naphthalene-1,4,5,8-tetracarboxylic acid;dihydrate Chemical compound O.O.C1=CC(C(O)=O)=C2C(C(=O)O)=CC=C(C(O)=O)C2=C1C(O)=O HCSCOKCINFFGRU-UHFFFAOYSA-N 0.000 description 1
- KQSABULTKYLFEV-UHFFFAOYSA-N naphthalene-1,5-diamine Chemical compound C1=CC=C2C(N)=CC=CC2=C1N KQSABULTKYLFEV-UHFFFAOYSA-N 0.000 description 1
- DOBFTMLCEYUAQC-UHFFFAOYSA-N naphthalene-2,3,6,7-tetracarboxylic acid Chemical compound OC(=O)C1=C(C(O)=O)C=C2C=C(C(O)=O)C(C(=O)O)=CC2=C1 DOBFTMLCEYUAQC-UHFFFAOYSA-N 0.000 description 1
- GOGZBMRXLADNEV-UHFFFAOYSA-N naphthalene-2,6-diamine Chemical compound C1=C(N)C=CC2=CC(N)=CC=C21 GOGZBMRXLADNEV-UHFFFAOYSA-N 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- AVRVTTKGSFYCDX-UHFFFAOYSA-N perylene-1,2,7,8-tetracarboxylic acid Chemical compound C1=CC(C2=C(C(C(=O)O)=CC=3C2=C2C=CC=3)C(O)=O)=C3C2=C(C(O)=O)C(C(O)=O)=CC3=C1 AVRVTTKGSFYCDX-UHFFFAOYSA-N 0.000 description 1
- RVRYJZTZEUPARA-UHFFFAOYSA-N phenanthrene-1,2,9,10-tetracarboxylic acid Chemical compound C1=CC=C2C(C(O)=O)=C(C(O)=O)C3=C(C(O)=O)C(C(=O)O)=CC=C3C2=C1 RVRYJZTZEUPARA-UHFFFAOYSA-N 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000001294 propane Substances 0.000 description 1
- RTHVZRHBNXZKKB-UHFFFAOYSA-N pyrazine-2,3,5,6-tetracarboxylic acid Chemical compound OC(=O)C1=NC(C(O)=O)=C(C(O)=O)N=C1C(O)=O RTHVZRHBNXZKKB-UHFFFAOYSA-N 0.000 description 1
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 1
- MIROPXUFDXCYLG-UHFFFAOYSA-N pyridine-2,5-diamine Chemical compound NC1=CC=C(N)N=C1 MIROPXUFDXCYLG-UHFFFAOYSA-N 0.000 description 1
- VHNQIURBCCNWDN-UHFFFAOYSA-N pyridine-2,6-diamine Chemical compound NC1=CC=CC(N)=N1 VHNQIURBCCNWDN-UHFFFAOYSA-N 0.000 description 1
- YKWDNEXDHDSTCU-UHFFFAOYSA-N pyrrolidine-2,3,4,5-tetracarboxylic acid Chemical compound OC(=O)C1NC(C(O)=O)C(C(O)=O)C1C(O)=O YKWDNEXDHDSTCU-UHFFFAOYSA-N 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 150000000000 tetracarboxylic acids Chemical class 0.000 description 1
- LUEGQDUCMILDOJ-UHFFFAOYSA-N thiophene-2,3,4,5-tetracarboxylic acid Chemical compound OC(=O)C=1SC(C(O)=O)=C(C(O)=O)C=1C(O)=O LUEGQDUCMILDOJ-UHFFFAOYSA-N 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 239000013585 weight reducing agent Substances 0.000 description 1
- 230000037303 wrinkles Effects 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Landscapes
- Laminated Bodies (AREA)
Description
本発明は、銅箔上にポリイミド接着層を有する絶縁層を設けた銅張積層板及びこれを配線加工してなる回路基板に関するものである。 The present invention relates to a copper-clad laminate in which an insulating layer having a polyimide adhesive layer is provided on a copper foil, and a circuit board obtained by wiring this.
近年、電子機器の小型化、軽量化、省スペース化の進展に伴い、薄く軽量で、可撓性を有し、屈曲を繰り返しても優れた耐久性を持つフレキシブルプリント配線板(FPC;Flexible Printed Circuits)の需要が増大している。FPCは、限られたスペースでも立体的かつ高密度の実装が可能であるため、例えば、HDD、DVD、携帯電話等の電子機器の可動部分の配線や、ケーブル、コネクター等の部品にその用途が拡大しつつある。 In recent years, with the progress of downsizing, weight reduction, and space saving of electronic devices, flexible printed wiring boards (FPCs) that are thin, light, flexible, and have excellent durability even after repeated bending are used. The demand for Circuits) is increasing. FPC can be mounted three-dimensionally and densely in a limited space. For example, it can be used for wiring of movable parts of electronic devices such as HDDs, DVDs, mobile phones, and parts such as cables and connectors. It is expanding.
上述した高密度化に加えて、機器の高性能化が進んだことから、伝送信号の高周波化への対応も必要とされている。情報処理や情報通信においては、大容量情報の伝送・処理するために伝送周波数を高くする取り組みが行われており、プリント基板材料は絶縁層の薄化と絶縁層の低誘電化による伝送損失の低下が求められている。従来のポリイミドを用いたFPCでは誘電率や誘電正接が高く、高周波域では伝送損失が高いため適応が難しく、高周波化に対応するために、低誘電率、低誘電正接を特徴とした液晶ポリマーを誘電体層としたFPCが用いられている。しかしながら、液晶ポリマーは、誘電特性に優れているものの、耐熱性や金属箔との接着性に改善の余地がある。 In addition to the above-described higher density, higher performance of equipment has been advanced, so that it is necessary to cope with higher frequency transmission signals. In information processing and information communication, efforts are being made to increase the transmission frequency in order to transmit and process large amounts of information, and printed circuit board materials are subject to transmission loss due to thinning of the insulating layer and low dielectric constant of the insulating layer. Decrease is required. Conventional FPC using polyimide has high dielectric constant and dielectric loss tangent, and transmission loss is high in high frequency range, so it is difficult to adapt. In order to cope with high frequency, liquid crystal polymer characterized by low dielectric constant and low dielectric loss tangent is used. An FPC as a dielectric layer is used. However, although the liquid crystal polymer is excellent in dielectric properties, there is room for improvement in heat resistance and adhesion to metal foil.
誘電特性と金属箔との接着性を改善するため、導体回路を形成する銅箔に接するポリイミド層のイミド基濃度を制御した銅張積層板が提案されている(特許文献1)。特許文献1によると、銅箔の表面粗度Rzと銅箔に接する面の低イミド基濃度のポリイミド層の組み合わせによって、誘電特性を制御できるとしているものの、長期耐熱接着性については十分に満足できるものではなかった。 In order to improve the dielectric property and the adhesion between the metal foil, a copper-clad laminate in which the imide group concentration of the polyimide layer in contact with the copper foil forming the conductor circuit is controlled has been proposed (Patent Document 1). According to Patent Document 1, although the dielectric properties can be controlled by a combination of the surface roughness Rz of the copper foil and the polyimide layer having a low imide group concentration on the surface in contact with the copper foil, the long-term heat-resistant adhesiveness is sufficiently satisfactory. It was not a thing.
低粗度化の銅箔と絶縁層の接着性を改善するため、絶縁層と接する銅箔の表面に所定の金属を析出させた銅箔が提案されている(特許文献2)。特許文献2によると、ニッケル、亜鉛及びコバルトの析出量によって、初期接着力と耐熱試験後の低下を抑えるものの、絶縁層が非熱可塑性ポリイミド樹脂であることからラミネート法による銅箔の接着が難しく、製造方法や製造条件が限られてしまうものであった。 In order to improve the adhesion between the low-roughness copper foil and the insulating layer, a copper foil in which a predetermined metal is deposited on the surface of the copper foil in contact with the insulating layer has been proposed (Patent Document 2). According to Patent Document 2, although the initial adhesive strength and the decrease after the heat resistance test are suppressed by the amount of nickel, zinc and cobalt deposited, it is difficult to bond the copper foil by the laminating method because the insulating layer is a non-thermoplastic polyimide resin. The manufacturing method and manufacturing conditions are limited.
信号配線に高周波信号が供給されている状態では、その信号配線の表面にしか電流が流れず、電流が流れる有効断面積が少なくなって直流抵抗が大きくなり、信号が減衰するという現象(表皮効果)が知られている。銅箔のポリイミド絶縁層に接する面の表面粗度を下げることで、この表皮効果による信号配線の抵抗増大を抑制できる。しかし、表面粗度を下げると、ポリイミド絶縁層と銅箔との接着性が損なわれるという問題があった。 When high-frequency signals are supplied to the signal wiring, current flows only on the surface of the signal wiring, the effective cross-sectional area through which the current flows decreases, the DC resistance increases, and the signal attenuates (skin effect) )It has been known. By reducing the surface roughness of the surface of the copper foil in contact with the polyimide insulating layer, an increase in the resistance of the signal wiring due to the skin effect can be suppressed. However, when the surface roughness is lowered, there is a problem that the adhesiveness between the polyimide insulating layer and the copper foil is impaired.
本発明は、電子機器の小型化・高性能化に伴う高周波化への対応を可能とする低粗度銅箔に対し、優れた接着性および長期耐熱接着性を備えたポリイミド接着層を有するフレキシブル銅張積層板を提供することを目的とする。 The present invention provides a flexible adhesive having a polyimide adhesive layer with excellent adhesion and long-term heat-resistant adhesion to a low-roughness copper foil that can cope with higher frequencies associated with downsizing and higher performance of electronic devices. An object is to provide a copper-clad laminate.
上述した課題を解決するため、本発明者らは、特定の構造を有するポリイミドを接着層として用いることにより、低粗度銅箔に対しても優れた接着性および長期耐熱接着性を有することを見出し、本発明を完成するに至った。 In order to solve the above-described problems, the present inventors have shown that the use of polyimide having a specific structure as an adhesive layer has excellent adhesiveness and long-term heat-resistant adhesiveness even for low-roughness copper foils. The headline and the present invention were completed.
すなわち、本発明の銅張積層板は、ポリイミド絶縁層と、該ポリイミド絶縁層の少なくとも一方の面に積層された銅箔を備えた銅張積層板であって、
前記ポリイミド絶縁層は、少なくとも1層以上のポリイミド層を含むとともに、下記の構成a及びb;
a)前記銅箔の表面に接する前記ポリイミド層が、テトラカルボン酸無水物成分とジアミン成分とを反応させて得られるポリイミドからなり、
前記ポリイミドが、下記式(1)で表されるポリイミドを20モル%以上含有するとともに、下記式(1)で表されるポリイミド及び式(2)で表されるポリイミドの合計が40モル%以上であること;
b)前記銅箔の十点平均粗さ(Rz)が1.0μm以下であり、算術平均粗さ(Ra)が0.2μm以下であること;
を備えている。
That is, the copper clad laminate of the present invention is a copper clad laminate comprising a polyimide insulating layer and a copper foil laminated on at least one surface of the polyimide insulating layer,
The polyimide insulating layer includes at least one polyimide layer and the following configurations a and b;
a) The polyimide layer in contact with the surface of the copper foil is made of polyimide obtained by reacting a tetracarboxylic anhydride component and a diamine component,
The polyimide contains 20 mol% or more of the polyimide represented by the following formula (1), and the total of the polyimide represented by the following formula (1) and the polyimide represented by the formula (2) is 40 mol% or more. Be
b) The ten-point average roughness (Rz) of the copper foil is 1.0 μm or less, and the arithmetic average roughness (Ra) is 0.2 μm or less;
It has.
本発明の回路基板は、上記いずれかの銅属張積層板の前記銅箔層を配線に加工してなるものである。 The circuit board of the present invention is obtained by processing the copper foil layer of any one of the above-described copper-clad laminates into wiring.
また、本発明の銅張積層板は、前記ポリイミド絶縁層が、少なくとも二層以上の前記ポリイミド層を含み、前記銅箔に直接接しない前記ポリイミド層のうち、少なくとも一層が主鎖に脂肪族化合物の残基を含むポリイミドからなるものであってもよい。 In the copper clad laminate of the present invention, the polyimide insulating layer includes at least two polyimide layers, and at least one of the polyimide layers not in direct contact with the copper foil is an aliphatic compound in the main chain. It may be made of polyimide containing the residue.
本発明における銅張積層板は、低粗度銅箔に対しても、優れた接着性および長期耐熱接着性を備えたポリイミド接着層を有するため、高速信号伝送と高信頼性を必要とするFPC等の電子部品を製造するための材料として好適に用いることが出来る。 Since the copper-clad laminate in the present invention has a polyimide adhesive layer having excellent adhesion and long-term heat-resistant adhesion even for low-roughness copper foil, FPC that requires high-speed signal transmission and high reliability It can use suitably as a material for manufacturing electronic components, such as.
以下、本発明の実施の形態について説明する。 Embodiments of the present invention will be described below.
<銅張積層板>
本実施の形態の銅張積層板は、ポリイミド絶縁層と、該ポリイミド絶縁層の少なくとも一方の面に積層された銅箔を備えている。
<Copper-clad laminate>
The copper-clad laminate of this embodiment includes a polyimide insulating layer and a copper foil laminated on at least one surface of the polyimide insulating layer.
<絶縁層>
ポリイミド絶縁層は、少なくとも1層以上のポリイミド層を含むとともに、銅箔の表面に接するポリイミド層として、ポリイミド接着層(i)を有している。つまり、ポリイミド絶縁層は、ポリイミド接着層(i)の単層からなるものであってもよいし、ポリイミド接着層(i)と、他のポリイミド層が積層された複数層からなるものであってもよい。
<Insulating layer>
The polyimide insulating layer includes at least one polyimide layer and has a polyimide adhesive layer (i) as a polyimide layer in contact with the surface of the copper foil. That is, the polyimide insulating layer may be composed of a single layer of the polyimide adhesive layer (i), or may be composed of a plurality of layers in which the polyimide adhesive layer (i) and other polyimide layers are laminated. Also good.
ポリイミド接着層(i)はテトラカルボン酸無水物成分とジアミン成分とを反応させて得られるポリイミドからなり、少なくとも、原料の酸無水物成分として3,3’、4,4’−ビフェニルテトラカルボン酸二無水物(BPDA)と、原料のジアミン成分として1,3−ビス(4−アミノフェノキシ)ベンゼン(TPE−R)とからなる式(1)で表される繰り返し単位構造を20モル%以上有する。式(1)で表されるポリイミドは、熱可塑性と高い引き裂き強度を示すことから、優れた接着性と凝集破壊耐性を有し、結果として銅箔とポリイミド接着層とのピール強度を向上することが出来る。 The polyimide adhesive layer (i) comprises a polyimide obtained by reacting a tetracarboxylic acid anhydride component and a diamine component, and at least 3,3 ′, 4,4′-biphenyltetracarboxylic acid as the raw acid anhydride component. 20 mol% or more of a repeating unit structure represented by the formula (1) consisting of dianhydride (BPDA) and 1,3-bis (4-aminophenoxy) benzene (TPE-R) as a diamine component of a raw material . Since the polyimide represented by the formula (1) exhibits thermoplasticity and high tear strength, it has excellent adhesion and cohesive fracture resistance, and as a result, improves the peel strength between the copper foil and the polyimide adhesive layer. I can do it.
式(1)で表されるポリイミドは、長期耐熱接着性にも優れており、これは式(1)で表されるポリイミドが高い引き裂き強度を有することから耐熱試験によって劣化しても強度が下がりにくく、また、結晶性が高いポリイミドでもあるため、分子間相互作用が強く、酸素の透過を妨げることにより銅箔の酸化劣化を抑制する効果があるためと考えられる。 The polyimide represented by the formula (1) is also excellent in long-term heat-resistant adhesion. This is because the polyimide represented by the formula (1) has a high tear strength, so that the strength is lowered even if it is deteriorated by a heat test. This is considered to be because it is difficult to resist and also has high crystallinity, so that the intermolecular interaction is strong, and the effect of suppressing the oxidative deterioration of the copper foil by preventing the permeation of oxygen.
銅箔に対し優れた接着性および長期耐熱接着性を発現するためには、式(1)で表されるポリイミドを、ポリイミド接着層(i)を構成するポリイミドに対して、少なくとも20モル%以上含有している必要があり、40モル%以上含有していることが好ましい。なお、式(1)で表されるポリイミドが、ポリイミド接着層(i)を構成するポリイミドに対して40モル%未満である場合は、式(2)で表される類似構造のポリイミドと組み合わせて40モル%以上とすることで同様の効果が得られる。また、ポリイミド接着層(i)を構成するポリイミド中に、式(2)で表されるポリイミドは含まなくてもよい。また、式(1)で表されるポリイミドが40モル未満の場合は、式(2)で表されるポリイミドとの合計で、40モル%以上となるようにする必要がある。 In order to develop excellent adhesion to copper foil and long-term heat-resistant adhesion, the polyimide represented by the formula (1) is at least 20 mol% or more with respect to the polyimide constituting the polyimide adhesive layer (i). It is necessary to contain, and it is preferable to contain 40 mol% or more. In addition, when the polyimide represented by Formula (1) is less than 40 mol% with respect to the polyimide which comprises a polyimide adhesion layer (i), it combines with the polyimide of the similar structure represented by Formula (2). The same effect is acquired by setting it as 40 mol% or more. Moreover, the polyimide represented by Formula (2) does not need to be contained in the polyimide which comprises a polyimide contact bonding layer (i). Moreover, when the polyimide represented by Formula (1) is less than 40 mol, it is necessary to make it 40 mol% or more in total with the polyimide represented by Formula (2).
ポリイミド接着層(i)に用いられるその他の酸無水物成分として、例えば、ピロメリット酸二無水物(PMDA)、3,3’,4,4’−ベンゾフェノンテトラカルボン酸二無水物(BTDA)、3,3’,4,4’−ジフェニルスルホンテトラカルボン酸二無水物、および4,4’−オキシジフタル酸二無水物(ODPA)などが挙げられる。 Examples of other acid anhydride components used in the polyimide adhesive layer (i) include pyromellitic dianhydride (PMDA), 3,3 ′, 4,4′-benzophenone tetracarboxylic dianhydride (BTDA), 3,3 ′, 4,4′-diphenylsulfonetetracarboxylic dianhydride, 4,4′-oxydiphthalic dianhydride (ODPA), and the like.
その他のジアミン成分としては、ジアミノジフェニルエーテル(DAPE)、2,2−ビス[4−(4−アミノフェノキシ)フェニル]プロパン(BAPP)、2,2’−ジメチル−4,4’−ジアミノビフェニル(m−TB)、パラフェニレンジアミン(p−PDA)などが例示される。 Other diamine components include diaminodiphenyl ether (DAPE), 2,2-bis [4- (4-aminophenoxy) phenyl] propane (BAPP), 2,2′-dimethyl-4,4′-diaminobiphenyl (m -TB), paraphenylenediamine (p-PDA) and the like.
本発明の銅張積層板のポリイミド絶縁層は、ポリイミド接着層(i)が、単層からなるものであってもその他ポリイミド絶縁層との複数層からなるものであっても良いが、銅張積層板の寸法安定性、誘電特性、吸湿特性、機械特性等を優れたものとするためには、複数層とすることが好ましい。 In the polyimide insulating layer of the copper clad laminate of the present invention, the polyimide adhesive layer (i) may be a single layer or a plurality of layers with other polyimide insulating layers. In order to improve the dimensional stability, dielectric properties, moisture absorption properties, mechanical properties, etc. of the laminate, it is preferable to have a plurality of layers.
銅張積層板を形成した際の反りや寸法安定性の低下を抑制する観点から、ポリイミド絶縁層として、熱膨張係数(CTE)を10〜30ppm/Kの範囲内に制御することが好ましい。そのため、ポリイミド絶縁層を複数層から構成する場合に、ポリイミド接着層(i)に積層して用いられるポリイミド層のCTEは、好ましくは1〜25ppm/Kの範囲内、より好ましくは10〜20ppm/Kの範囲内がよい。 From the viewpoint of suppressing warpage and dimensional stability degradation when the copper clad laminate is formed, it is preferable to control the thermal expansion coefficient (CTE) within the range of 10 to 30 ppm / K as the polyimide insulating layer. Therefore, when the polyimide insulating layer is composed of a plurality of layers, the CTE of the polyimide layer used by being laminated on the polyimide adhesive layer (i) is preferably in the range of 1 to 25 ppm / K, more preferably 10 to 20 ppm / Within the range of K is good.
ポリイミド接着層(i)に積層されるポリイミド層を構成するポリイミドは、高耐熱性、低CTEとするために、芳香族テトラカルボン酸二無水物と芳香族ジアミンとを反応させて得られるポリイミドが好ましいが、低誘電特性とするために、耐熱性を著しく損なわない程度に脂肪族化合物のモノマーを用いてもよい。脂肪族化合物のモノマーとしては、例えば、ダイマー酸の二つの末端カルボン酸基(‐COOH)が、1級のアミノメチル基(‐CH2‐NH2)又はアミノ基(‐NH2)に置換されてなるダイマー酸型ジアミンなどを挙げることができる。 The polyimide constituting the polyimide layer laminated on the polyimide adhesive layer (i) is a polyimide obtained by reacting an aromatic tetracarboxylic dianhydride and an aromatic diamine in order to achieve high heat resistance and low CTE. Although preferable, in order to obtain low dielectric properties, an aliphatic compound monomer may be used to such an extent that the heat resistance is not significantly impaired. As the monomer of the aliphatic compound, for example, two terminal carboxylic acid groups (—COOH) of dimer acid are substituted with primary aminomethyl groups (—CH 2 —NH 2 ) or amino groups (—NH 2 ). And dimer acid type diamine.
ポリイミド接着層(i)に積層されるポリイミド層を形成するための原料となる芳香族テトラカルボン酸二無水物としては、例えば無水ピロメリット酸、1,4,5,8−ナフタレンテトラカルボン酸二無水物、3,3’,4,4’-ビフェニルテトラカルボン酸二無水物、3,3’,4,4’-ジフェニルスルホンテトラカルボン酸二無水物、4,4’-オキシジフタル酸無水物、2,2',3,3'-、2,3,3',4'-又は3,3',4,4'-ベンゾフェノンテトラカルボン酸二無水物、2,3',3,4’-ビフェニルテトラカルボン酸二無水物、2,2',3,3'-ビフェニルテトラカルボン酸二無水物、2,3',3,4'-ジフェニルエーテルテトラカルボン酸二無水物、ビス(2,3-ジカルボキシフェニル)エーテル二無水物、3,3'',4,4''-、2,3,3'',4''-又は2,2'',3,3''-p-テルフェニルテトラカルボン酸二無水物、2,2-ビス(2,3-又は3,4-ジカルボキシフェニル)-プロパン二無水物、ビス(2,3-又は3.4-ジカルボキシフェニル)メタン二無水物、ビス(2,3-又は3,4-ジカルボキシフェニル)スルホン二無水物、1,1-ビス(2,3-又は3,4-ジカルボキシフェニル)エタン二無水物、1,2,7,8-、1,2,6,7-又は1,2,9,10-フェナンスレン-テトラカルボン酸二無水物、2,3,6,7−アントラセンテトラカルボン酸二無水物、2,2-ビス(3,4-ジカルボキシフェニル)テトラフルオロプロパン二無水物、2,3,5,6-シクロヘキサン二無水物、2,3,6,7-ナフタレンテトラカルボン酸二無水物、1,2,5,6-ナフタレンテトラカルボン酸二無水物、4,8-ジメチル-1,2,3,5,6,7-ヘキサヒドロナフタレン-1,2,5,6-テトラカルボン酸二無水物、2,6-又は2,7-ジクロロナフタレン-1,4,5,8-テトラカルボン酸二無水物、2,3,6,7-(又は1,4,5,8-)テトラクロロナフタレン-1,4,5,8-(又は2,3,6,7-)テトラカルボン酸二無水物、2,3,8,9-、3,4,9,10-、4,5,10,11-又は5,6,11,12-ペリレン-テトラカルボン酸二無水物、シクロペンタン-1,2,3,4-テトラカルボン酸二無水物、ピラジン-2,3,5,6-テトラカルボン酸二無水物、ピロリジン-2,3,4,5-テトラカルボン酸二無水物、チオフェン-2,3,4,5-テトラカルボン酸二無水物、4,4’-ビス(2,3-ジカルボキシフェノキシ)ジフェニルメタン二無水物等が挙げられる。 Examples of the aromatic tetracarboxylic dianhydride used as a raw material for forming the polyimide layer laminated on the polyimide adhesive layer (i) include pyromellitic anhydride and 1,4,5,8-naphthalene tetracarboxylic acid dihydrate. Anhydride, 3,3 ', 4,4'-biphenyltetracarboxylic dianhydride, 3,3', 4,4'-diphenylsulfone tetracarboxylic dianhydride, 4,4'-oxydiphthalic anhydride, 2,2 ', 3,3'-, 2,3,3', 4'- or 3,3 ', 4,4'-benzophenonetetracarboxylic dianhydride, 2,3', 3,4'- Biphenyltetracarboxylic dianhydride, 2,2 ', 3,3'-biphenyltetracarboxylic dianhydride, 2,3', 3,4'-diphenyl ether tetracarboxylic dianhydride, bis (2,3- Dicarboxyphenyl) ether dianhydride, 3,3``, 4,4 ''-, 2,3,3``, 4 ''-or 2,2 '', 3,3 ''-p-ter Phenyltetracarboxylic dianhydride, 2,2-bis (2,3- or 3,4-dicarboxypheny ) -Propane dianhydride, bis (2,3- or 3.4-dicarboxyphenyl) methane dianhydride, bis (2,3- or 3,4-dicarboxyphenyl) sulfone dianhydride, 1,1- Bis (2,3- or 3,4-dicarboxyphenyl) ethane dianhydride, 1,2,7,8-, 1,2,6,7- or 1,2,9,10-phenanthrene-tetracarboxylic Acid dianhydride, 2,3,6,7-anthracenetetracarboxylic dianhydride, 2,2-bis (3,4-dicarboxyphenyl) tetrafluoropropane dianhydride, 2,3,5,6- Cyclohexane dianhydride, 2,3,6,7-naphthalene tetracarboxylic dianhydride, 1,2,5,6-naphthalene tetracarboxylic dianhydride, 4,8-dimethyl-1,2,3,5 , 6,7-Hexahydronaphthalene-1,2,5,6-tetracarboxylic dianhydride, 2,6- or 2,7-dichloronaphthalene-1,4,5,8-tetracarboxylic dianhydride 2,3,6,7- (or 1,4,5,8-) tetrachloronaphthalene-1,4,5,8- (or 2,3,6,7-) tetracar Acid dianhydride, 2,3,8,9-, 3,4,9,10-, 4,5,10,11- or 5,6,11,12-perylene-tetracarboxylic dianhydride, Cyclopentane-1,2,3,4-tetracarboxylic dianhydride, pyrazine-2,3,5,6-tetracarboxylic dianhydride, pyrrolidine-2,3,4,5-tetracarboxylic dianhydride Products, thiophene-2,3,4,5-tetracarboxylic dianhydride, 4,4′-bis (2,3-dicarboxyphenoxy) diphenylmethane dianhydride, and the like.
また、ポリイミド接着層(i)に積層されるポリイミド層を形成するための原料となる芳香族ジアミンとしては、例えば、4,4’−ジアミノ−2,2’−ジメチルビフェニル、4,4’−ジアミノ−3,3’−ジメチルビフェニル、4,4’−ジアミノ−2,2’−ビス(トリフルオロメチル)ビフェニル、4,4’-ジアミノジフェニルエーテル、2’-メトキシ-4,4’-ジアミノベンズアニリド、1,4-ビス(4-アミノフェノキシ)ベンゼン、1,3-ビス(4-アミノフェノキシ)ベンゼン、2,2’-ビス[4-(4-アミノフェノキシ)フェニル]プロパン、2,2’-ジメチル-4,4’-ジアミノビフェニル、3,3’-ジヒドロキシ-4,4’-ジアミノビフェニル、4,4’-ジアミノベンズアニリド、2,2-ビス-[4-(3-アミノフェノキシ)フェニル]プロパン、ビス[4-(4-アミノフェノキシ)フェニル]スルホン、ビス[4-(3−アミノフェノキシ)フェニル]スルホン、ビス[4-(4-アミノフェノキシ)]ビフェニル、ビス[4-(3-アミノフェノキシ)ビフェニル、ビス[1-(4-アミノフェノキシ)]ビフェニル、ビス[1-(3-アミノフェノキシ)]ビフェニル、ビス[4-(4-アミノフェノキシ)フェニル]メタン、ビス[4-(3-アミノフェノキシ)フェニル]メタン、ビス[4-(4-アミノフェノキシ)フェニル]エーテル、ビス[4-(3-アミノフェノキシ)フェニル]エーテル、ビス[4-(4-アミノフェノキシ)]ベンゾフェノン、ビス[4-(3-アミノフェノキシ)]ベンゾフェノン、ビス[4,4'-(4-アミノフェノキシ)]ベンズアニリド、ビス[4,4'-(3-アミノフェノキシ)]ベンズアニリド、9,9-ビス[4-(4-アミノフェノキシ)フェニル]フルオレン、9,9-ビス[4-(3-アミノフェノキシ)フェニル]フルオレン、2,2−ビス-[4-(4-アミノフェノキシ)フェニル]ヘキサフルオロプロパン、2,2-ビス-[4-(3-アミノフェノキシ)フェニル]ヘキサフルオロプロパン、4,4’-メチレンジ-o-トルイジン、4,4’-メチレンジ-2,6-キシリジン、4,4’-メチレン-2,6-ジエチルアニリン、4,4’-ジアミノジフェニルプロパン、3,3’-ジアミノジフェニルプロパン、4,4’-ジアミノジフェニルエタン、3,3’-ジアミノジフェニルエタン、4,4’-ジアミノジフェニルメタン、3,3’-ジアミノジフェニルメタン、4,4’-ジアミノジフェニルスルフィド、3,3’-ジアミノジフェニルスルフィド、4,4’-ジアミノジフェニルスルホン、3,3’-ジアミノジフェニルスルホン、4,4’-ジアミノジフェニルエーテル、3,3-ジアミノジフェニルエーテル、3,4'-ジアミノジフェニルエーテル、ベンジジン、3,3’-ジアミノビフェニル、3,3’-ジメトキシベンジジン、4,4''-ジアミノ-p-テルフェニル、3,3''-ジアミノ-p-テルフェニル、m-フェニレンジアミン、p-フェニレンジアミン、2,6-ジアミノピリジン、1,4-ビス(4-アミノフェノキシ)ベンゼン、1,3-ビス(4-アミノフェノキシ)ベンゼン、4,4'-[1,4-フェニレンビス(1-メチルエチリデン)]ビスアニリン、4,4'-[1,3-フェニレンビス(1-メチルエチリデン)]ビスアニリン、ビス(p-アミノシクロヘキシル)メタン、ビス(p-β-アミノ-t-ブチルフェニル)エーテル、ビス(p-β-メチル-δ-アミノペンチル)ベンゼン、p-ビス(2-メチル-4-アミノペンチル)ベンゼン、p-ビス(1,1-ジメチル-5-アミノペンチル)ベンゼン、1,5-ジアミノナフタレン、2,6-ジアミノナフタレン、2,4-ビス(β-アミノ-t-ブチル)トルエン、2,4-ジアミノトルエン、m-キシレン-2,5-ジアミン、p-キシレン-2,5-ジアミン、m-キシリレンジアミン、p-キシリレンジアミン、2,6-ジアミノピリジン、2,5-ジアミノピリジン、2,5-ジアミノ-1,3,4-オキサジアゾール、ピペラジン等の芳香族ジアミンを含んでもよく、これらは単独又は2種以上を組み合わせて使用することができる。 Moreover, as an aromatic diamine used as a raw material for forming the polyimide layer laminated | stacked on a polyimide adhesion layer (i), 4,4'-diamino-2,2'-dimethylbiphenyl, 4,4'- Diamino-3,3′-dimethylbiphenyl, 4,4′-diamino-2,2′-bis (trifluoromethyl) biphenyl, 4,4′-diaminodiphenyl ether, 2′-methoxy-4,4′-diaminobenz Anilide, 1,4-bis (4-aminophenoxy) benzene, 1,3-bis (4-aminophenoxy) benzene, 2,2'-bis [4- (4-aminophenoxy) phenyl] propane, 2,2 '-Dimethyl-4,4'-diaminobiphenyl, 3,3'-dihydroxy-4,4'-diaminobiphenyl, 4,4'-diaminobenzanilide, 2,2-bis- [4- (3-aminophenoxy ) Phenyl] propane, bis [4- (4-aminophenoxy) phenyl] Sulfone, bis [4- (3-aminophenoxy) phenyl] sulfone, bis [4- (4-aminophenoxy)] biphenyl, bis [4- (3-aminophenoxy) biphenyl, bis [1- (4-aminophenoxy) )] Biphenyl, bis [1- (3-aminophenoxy)] biphenyl, bis [4- (4-aminophenoxy) phenyl] methane, bis [4- (3-aminophenoxy) phenyl] methane, bis [4- ( 4-aminophenoxy) phenyl] ether, bis [4- (3-aminophenoxy) phenyl] ether, bis [4- (4-aminophenoxy)] benzophenone, bis [4- (3-aminophenoxy)] benzophenone, bis [4,4 ′-(4-aminophenoxy)] benzanilide, bis [4,4 ′-(3-aminophenoxy)] benzanilide, 9,9-bis [4- (4-aminophenoxy) phenyl] fluorene, 9 , 9 -Bis [4- (3-aminophenoxy) phenyl] fluorene, 2,2-bis- [4- (4-aminophenoxy) phenyl] hexafluoropropane, 2,2-bis- [4- (3-aminophenoxy) ) Phenyl] hexafluoropropane, 4,4'-methylenedi-o-toluidine, 4,4'-methylenedi-2,6-xylidine, 4,4'-methylene-2,6-diethylaniline, 4,4'- Diaminodiphenylpropane, 3,3'-diaminodiphenylpropane, 4,4'-diaminodiphenylethane, 3,3'-diaminodiphenylethane, 4,4'-diaminodiphenylmethane, 3,3'-diaminodiphenylmethane, 4,4 '-Diaminodiphenyl sulfide, 3,3'-diaminodiphenyl sulfide, 4,4'-diaminodiphenyl sulfone, 3,3'-diaminodiphenyl sulfone, 4,4'-diaminodiphenyl ether, 3,3-diaminodiphenyl ether, 3, Four'- Diaminodiphenyl ether, benzidine, 3,3'-diaminobiphenyl, 3,3'-dimethoxybenzidine, 4,4 ''-diamino-p-terphenyl, 3,3 ''-diamino-p-terphenyl, m-phenylene Diamine, p-phenylenediamine, 2,6-diaminopyridine, 1,4-bis (4-aminophenoxy) benzene, 1,3-bis (4-aminophenoxy) benzene, 4,4 '-[1,4- Phenylenebis (1-methylethylidene)] bisaniline, 4,4 '-[1,3-phenylenebis (1-methylethylidene)] bisaniline, bis (p-aminocyclohexyl) methane, bis (p-β-amino-t -Butylphenyl) ether, bis (p-β-methyl-δ-aminopentyl) benzene, p-bis (2-methyl-4-aminopentyl) benzene, p-bis (1,1-dimethyl-5-aminopentyl) ) Benzene, 1,5-diaminonaphthalene, 2,6-diaminonaphthalene, 2,4-bis (β-amino- t-butyl) toluene, 2,4-diaminotoluene, m-xylene-2,5-diamine, p-xylene-2,5-diamine, m-xylylenediamine, p-xylylenediamine, 2,6-diamino Aromatic diamines such as pyridine, 2,5-diaminopyridine, 2,5-diamino-1,3,4-oxadiazole, piperazine and the like may be included, and these may be used alone or in combination of two or more. it can.
ポリイミド絶縁層の厚さは、6〜50μmの範囲内であるのがよく、好ましくは9〜45μmの範囲内であることがよい。ポリイミド絶縁層の厚さが6μmに満たないと、銅張積層板の製造等における搬送時にシワが入るなどの不具合が生じるおそれがあり、一方、ポリイミド絶縁層の厚さが50μmを超えると銅張積層板の製造時の寸法安定性や屈曲性等において問題が生じるおそれがある。なお、複数層からポリイミド絶縁層を形成する場合には、その合計の厚みが上記範囲内になるようにすればよい。 The thickness of the polyimide insulating layer is preferably in the range of 6 to 50 μm, and preferably in the range of 9 to 45 μm. If the thickness of the polyimide insulating layer is less than 6 μm, there is a risk of causing problems such as wrinkles during transport in the manufacture of copper-clad laminates, etc., whereas if the thickness of the polyimide insulating layer exceeds 50 μm, copper-clad There may be a problem in dimensional stability, flexibility, etc. during the production of the laminate. In addition, what is necessary is just to make it the total thickness in the said range when forming a polyimide insulating layer from multiple layers.
ポリイミド絶縁層を構成するポリイミド層[ポリイミド接着層(i)を含む]を形成する方法については特に限定されないが、例えば、ポリイミドの前駆体であるポリアミド酸の樹脂溶液を、銅箔表面に直接塗布し、もしくは既に形成されたポリイミド層上に塗布し、樹脂溶液に含まれる溶剤を150℃以下の温度である程度除去した後、更に、100〜450℃の範囲内の温度条件で溶媒の乾燥およびイミド化を行うことがよい。 The method for forming the polyimide layer [including the polyimide adhesion layer (i)] constituting the polyimide insulating layer is not particularly limited. For example, a polyamide acid resin solution, which is a polyimide precursor, is directly applied to the copper foil surface. Or after applying to the polyimide layer already formed and removing the solvent contained in the resin solution to some extent at a temperature of 150 ° C. or less, and further drying the solvent and imide under a temperature condition in the range of 100 to 450 ° C. It is good to carry out.
銅箔に直接接着しないポリイミド層は、必要に応じて、ポリイミド層中に無機フィラーを含有してもよい。具体的には、例えば二酸化ケイ素、酸化アルミニウム、酸化マグネシウム、酸化ベリリウム、窒化ホウ素、窒化アルミニウム、窒化ケイ素、フッ化アルミニウム、フッ化カルシウム等が挙げられる。これらは1種又は2種以上を混合して用いることができる。 The polyimide layer that does not directly adhere to the copper foil may contain an inorganic filler in the polyimide layer as necessary. Specific examples include silicon dioxide, aluminum oxide, magnesium oxide, beryllium oxide, boron nitride, aluminum nitride, silicon nitride, aluminum fluoride, and calcium fluoride. These may be used alone or in combination of two or more.
<銅箔>
本実施の形態の銅張積層板において、銅箔は、ポリイミド接着層(i)と接する面が、粗化処理されており、十点平均粗さ(Rz)が1.0μm以下、算術平均粗さ(Ra)が0.2μm以下である。なお、銅箔の材質は、銅合金であってもよい。
<Copper foil>
In the copper clad laminate of the present embodiment, the surface of the copper foil in contact with the polyimide adhesive layer (i) is roughened, the ten-point average roughness (Rz) is 1.0 μm or less, and the arithmetic average roughness The thickness (Ra) is 0.2 μm or less. The material of the copper foil may be a copper alloy.
銅箔の粗化処理は、例えば電気めっき法により銅箔と同じ材料(例えば銅)で銅箔の表面に微細な凹凸を有する皮膜(塊状皮膜)を付着させることにより形成することができる。 The roughening treatment of the copper foil can be formed, for example, by depositing a film (block film) having fine irregularities on the surface of the copper foil with the same material (for example, copper) as the copper foil by electroplating.
本実施の形態の銅張積層板において、例えばフレキシブル基板の製造に用いる場合の銅箔の好ましい厚みは、3〜50μmの範囲内であり、より好ましくは5〜30μmの範囲内であるが、回路パターンの線幅を細線化するためには、銅箔の厚みは5〜20μmの範囲内が最も好ましい。 In the copper clad laminate of the present embodiment, for example, the preferred thickness of the copper foil when used for the production of a flexible substrate is in the range of 3 to 50 μm, more preferably in the range of 5 to 30 μm. In order to reduce the line width of the pattern, the thickness of the copper foil is most preferably in the range of 5 to 20 μm.
以下、代表的にキャスト法の場合を例に挙げて本実施の形態の銅張積層板(好ましくはフレキシブル銅張積層板)の製造方法について、具体的に説明する。 Hereinafter, a method for producing a copper-clad laminate (preferably a flexible copper-clad laminate) of the present embodiment will be specifically described by taking the case of a cast method as an example.
まず、銅張積層板の製造方法は、以下の工程(1)〜(3)を含むことができる。
工程(1):
工程(1)は、ポリイミド層[ポリイミド接着層(i)を含む]を構成するポリイミドの前駆体であるポリアミド酸の樹脂溶液を得る工程である。
First, the manufacturing method of a copper clad laminated board can include the following processes (1)-(3).
Step (1):
Step (1) is a step of obtaining a polyamic acid resin solution which is a polyimide precursor constituting the polyimide layer [including the polyimide adhesive layer (i)].
工程(2):
工程(2)は、銅箔上に、ポリイミド接着層(i)となるポリアミド酸の樹脂溶液を塗布し、塗布膜を形成する工程である。銅箔は、カットシート状、ロール状のもの、又はエンドレスベルト状などの形状で使用できる。生産性を得るためには、ロール状又はエンドレスベルト状の形態とし、連続生産可能な形式とすることが効率的である。さらに、プリント配線板における配線パターン精度の改善効果をより大きく発現させる観点から、銅箔は長尺に形成されたロール状のものが好ましい。
Step (2):
Step (2) is a step of applying a polyamic acid resin solution to be the polyimide adhesive layer (i) on the copper foil to form a coating film. The copper foil can be used in the form of a cut sheet, a roll, or an endless belt. In order to obtain productivity, it is efficient to use a roll-like or endless belt-like form so that continuous production is possible. Furthermore, the copper foil is preferably in the form of a roll that is formed in a long length from the viewpoint of more greatly improving the effect of improving the wiring pattern accuracy in the printed wiring board.
塗布膜を形成する方法は、ポリアミド酸の樹脂溶液を銅箔の上に直接塗布した後に乾燥することで形成できる。塗布する方法は特に制限されず、例えばコンマ、ダイ、ナイフ、リップ等のコーターにて塗布することが可能である。 The coating film can be formed by applying a polyamic acid resin solution directly on a copper foil and then drying. The method of applying is not particularly limited, and it is possible to apply with a coater such as a comma, die, knife, lip or the like.
ポリイミド層を複数層とする場合、ポリイミド接着層(i)となる前駆体(ポリアミド酸)の層の上に、他のポリイミド層となる前駆体を順次塗布して形成することができる。前駆体の層が3層以上からなる場合、同一の構成の前駆体を2回以上使用してもよい。層構造が簡単である2層又は単層は、工業的に有利に得ることができるので好ましい。また、前駆体の層の厚み(乾燥後)は、例えば、3〜100μmの範囲内、好ましくは3〜50μmの範囲内にあることがよい。 When making a polyimide layer into multiple layers, the precursor used as another polyimide layer can be apply | coated sequentially on the layer of the precursor (polyamide acid) used as the polyimide adhesion layer (i). When the precursor layer is composed of three or more layers, the precursor having the same configuration may be used twice or more. A two-layer or a single layer having a simple layer structure is preferable because it can be advantageously obtained industrially. The thickness of the precursor layer (after drying) is, for example, in the range of 3 to 100 μm, preferably in the range of 3 to 50 μm.
ポリイミド層を複数層とする場合、銅箔に接するポリイミド層が熱可塑性ポリイミドであるポリイミド接着層(i)となるように前駆体の層を形成する。ポリイミド接着層(i)に熱可塑性ポリイミドを用いることで、銅箔との密着性を向上させることができる。このような熱可塑性ポリイミドは、ガラス転移温度(Tg)が360℃以下であるものが好ましく、より好ましくは200〜320℃である。 When making a polyimide layer into multiple layers, a layer of a precursor is formed so that the polyimide layer which touches copper foil may become polyimide adhesion layer (i) which is thermoplastic polyimide. Adhesiveness with copper foil can be improved by using thermoplastic polyimide for the polyimide adhesive layer (i). Such a thermoplastic polyimide preferably has a glass transition temperature (Tg) of 360 ° C. or lower, more preferably 200 to 320 ° C.
また、単層又は複数層の前駆体の層を一旦イミド化して単層又は複数層のポリイミド層とした後に、更にその上に前駆体の層を形成することも可能である。 It is also possible to once imidize a single layer or a plurality of precursor layers into a single layer or a plurality of polyimide layers, and further form a precursor layer thereon.
工程(3):
工程(3)は、単層又は複数層の塗布膜を熱処理してイミド化し、ポリイミド絶縁層を形成する工程である。イミド化の方法は、特に制限されず、例えば、80〜400℃の範囲内の温度条件で1〜60分間の範囲内の時間加熱するといった熱処理が好適に採用される。銅箔の酸化を抑制するため、低酸素雰囲気下での熱処理が好ましく、具体的には、窒素又は希ガスなどの不活性ガス雰囲気下、水素などの還元ガス雰囲気下、あるいは真空中で行うことが好ましい。熱処理により、塗布膜中のポリアミド酸がイミド化し、ポリイミドが形成される。
Step (3):
Step (3) is a step of forming a polyimide insulating layer by heat-treating a single layer or a plurality of layers of coating film to imidize. The imidization method is not particularly limited, and for example, heat treatment such as heating for 1 to 60 minutes under a temperature condition in the range of 80 to 400 ° C. is suitably employed. In order to suppress the oxidation of the copper foil, heat treatment in a low oxygen atmosphere is preferable. Specifically, it is performed in an inert gas atmosphere such as nitrogen or a rare gas, in a reducing gas atmosphere such as hydrogen, or in a vacuum. Is preferred. By the heat treatment, the polyamic acid in the coating film is imidized to form polyimide.
以上のようにして、ポリイミド接着層(i)を含む単層又は複数層のポリイミド層と、銅箔とを有する銅張積層板を製造することができる。 As described above, a copper-clad laminate having a single-layer or multiple-layer polyimide layer including the polyimide adhesive layer (i) and the copper foil can be produced.
本発明の銅張積層板は、ポリイミド絶縁層の片面側のみに銅箔を備えた片面銅張積層板であってもよいことはもちろんのこと、ポリイミド絶縁層の両面に銅箔を備えた両面銅張積層板でもよい。なお、両面銅張積層板を得るためには、片面銅張積層板を形成した後、互いにポリイミド絶縁層を向き合わせて熱プレスによって圧着し形成することや、片面銅張積層板のポリイミド絶縁層に銅箔を圧着し形成すること等により得ることができる。 The copper-clad laminate of the present invention may be a single-sided copper-clad laminate having a copper foil only on one side of the polyimide insulating layer, as well as both sides having a copper foil on both sides of the polyimide insulating layer. A copper-clad laminate may also be used. In addition, in order to obtain a double-sided copper-clad laminate, after forming a single-sided copper-clad laminate, the polyimide insulation layers are faced to each other and bonded by hot pressing, or a polyimide insulation layer of a single-sided copper-clad laminate It can be obtained by pressure-bonding and forming a copper foil.
また、回路基板の製造方法は、上記(1)〜(3)の工程に加え、さらに、以下の工程(4)を含むことができる。 The circuit board manufacturing method can further include the following step (4) in addition to the above steps (1) to (3).
工程(4):
工程(4)は、銅張積層板の銅箔をパターニングして配線層を形成する工程である。本工程では、銅箔を所定形状にエッチングすることによってパターン形成し、配線層に加工することによってプリント配線板を得る。エッチングは、例えばフォトリソグラフィー技術などを利用する任意の方法で行うことができる。
Step (4):
Step (4) is a step of forming a wiring layer by patterning the copper foil of the copper clad laminate. In this step, a copper foil is etched into a predetermined shape to form a pattern, and a printed wiring board is obtained by processing into a wiring layer. Etching can be performed by any method using, for example, photolithography.
なお、以上の説明では、回路基板の製造方法の特徴的工程のみを説明した。すなわち、回路基板を製造する際に、通常行われる上記以外の工程、例えば前工程でのスルーホール加工や、後工程の端子メッキ、外形加工などの工程は、常法に従い行うことができる。 In the above description, only the characteristic steps of the circuit board manufacturing method have been described. That is, when manufacturing a circuit board, processes other than the above normally performed, for example, processes such as through-hole processing in a previous process, terminal plating in a subsequent process, and external processing can be performed according to a conventional method.
以下に実施例を示し、本発明の特徴をより具体的に説明する。ただし、本発明の範囲は、実施例に限定されない。なお、以下の実施例において、特にことわりのない限り各種測定、評価は下記によるものである。 The features of the present invention will be described more specifically with reference to examples. However, the scope of the present invention is not limited to the examples. In the following examples, various measurements and evaluations are as follows unless otherwise specified.
[粘度測定]
樹脂の粘度はE型粘度計(ブルックフィールド社製、商品名;DV−II+Pro)を用いて、25℃における粘度を測定した。トルクが10%〜90%になるよう回転数を設定し、測定を開始してから2分経過後、粘度が安定した時の値を読み取った。
[Viscosity measurement]
The viscosity of the resin was measured at 25 ° C. using an E-type viscometer (manufactured by Brookfield, trade name: DV-II + Pro). The number of revolutions was set so that the torque was 10% to 90%, and after 2 minutes from the start of measurement, the value when the viscosity was stabilized was read.
[分子量測定]
分子量は、ゲル浸透クロマトグラフィー(東ソー株式会社製、商品名;HLC−8220GPC)により測定した。標準物質としてポリスチレンを用い、展開溶媒にはN,N−ジメチルアセトアミドを用いた。
[Molecular weight measurement]
The molecular weight was measured by gel permeation chromatography (trade name; HLC-8220GPC, manufactured by Tosoh Corporation). Polystyrene was used as a standard substance, and N, N-dimethylacetamide was used as a developing solvent.
[銅箔の粗化高さの測定]
銅箔の粗化高さの測定は、断面試料作製装置(日本電子社製、商品名;SM−09010クロスセクションポリッシャ)によるイオン照射で対象銅箔の断面形成加工を行い、露出した銅箔断面を5200倍でSEM観察することにより銅箔断面の像を得た。得られた画像を用いて、画像中に記されたスケールに基づき、粗化高さを算出した。
[Measurement of roughening height of copper foil]
The roughening height of the copper foil is measured by performing cross-section formation processing of the target copper foil by ion irradiation with a cross-section sample preparation apparatus (trade name; SM-09010 cross section polisher manufactured by JEOL Ltd.), and exposing the cross-section of the exposed copper foil. Was observed by SEM at 5200 times to obtain an image of a copper foil cross section. Using the obtained image, the roughening height was calculated based on the scale described in the image.
[ピール強度の測定]
ピール強度は、テンシロンテスター(東洋精機製作所製、商品名;ストログラフVE−1D)を用いて、銅箔を幅1mmに加工したサンプル(銅箔/樹脂層で構成された積層体)の樹脂層側を両面テープによりアルミ板に固定し、銅箔を180°方向に50mm/分の速度で、樹脂層と銅箔を剥離する時の力を求めた。
[Measurement of peel strength]
Peel strength is a resin layer of a sample (a laminate composed of a copper foil / resin layer) obtained by processing a copper foil into a width of 1 mm using a Tensilon tester (trade name; Strograph VE-1D, manufactured by Toyo Seiki Seisakusho) The side was fixed to an aluminum plate with a double-sided tape, and the force required to peel the resin layer and the copper foil at a rate of 50 mm / min in the 180 ° direction was determined.
[耐熱ピール特性の評価]
ピール強度測定用に回路加工されたサンプルを150℃の大気オーブンに投入し、500時間熱処理を行った後測定したピール強度が0.50kN/m以上を優、0.40kN/m以上を良、0.30kN/m以上を可、0.30kN/m未満を不可とした。
[Evaluation of heat-resistant peel properties]
A sample processed for peel strength measurement is put into an atmospheric oven at 150 ° C. and subjected to a heat treatment for 500 hours. The peel strength measured after 0.50 kN / m or more is excellent, and 0.40 kN / m or more is good. 0.30 kN / m or more was acceptable, and less than 0.30 kN / m was impossible.
[引き裂き伝播抵抗の測定]
63.5mm×50mmの試験片を準備し、試験片に長さ12.7mmの切り込みを入れ、東洋精機製の軽荷重引き裂き試験機を用い測定した。
[Measurement of tear propagation resistance]
A test piece of 63.5 mm × 50 mm was prepared, a cut of 12.7 mm in length was put into the test piece, and measurement was performed using a light load tear tester manufactured by Toyo Seiki.
実施例及び比較例に用いた略号は、以下の化合物を示す。
DDA:ダイマー酸型ジアミン(クローダジャパン株式会社製、商品名;PRIAMINE1074、炭素数;36、アミン価;210mgKOH/g、ダイマー成分の含有量;95重量%以上)
m−TB:2,2’−ジメチル−4,4’−ジアミノビフェニル
TPE−R:1,3−ビス(4−アミノフェノキシ)ベンゼン
APB:1,3−ビス(3−アミノフェノキシ)ベンゼン
TPE−Q:1,4−ビス(4−アミノフェノキシ)ベンゼン
BAPP:2,2−ビス[4−(4−アミノフェノキシ)フェニル]プロパン
4,4’−DAPE:4,4’−ジアミノジフェニルエーテル
PMDA:ピロメリット酸二無水物
BPDA:3,3’、4,4’−ビフェニルテトラカルボン酸二無水物
DMAc:N,N−ジメチルアセトアミド
銅箔a:Ra=0.104μm、Rz=0.398μm、粗化高さ=0.12μm、Ni=0.38mg/cm2、Co=0mg/cm2
銅箔b:Ra=0.152μm、Rz=0.806μm、粗化高さ=0.09μm、Ni=0.46mg/cm2、Co=0.05mg/cm2
銅箔c:Ra=0.102μm、Rz=0.474μm、粗化高さ=0.25μm、Ni=0.01mg/cm2、Co=0mg/cm2
Abbreviations used in Examples and Comparative Examples indicate the following compounds.
DDA: Dimer acid type diamine (trade name; PRIAMINE 1074, carbon number: 36, amine value: 210 mgKOH / g, content of dimer component: 95% by weight or more)
m-TB: 2,2′-dimethyl-4,4′-diaminobiphenyl TPE-R: 1,3-bis (4-aminophenoxy) benzene APB: 1,3-bis (3-aminophenoxy) benzene TPE- Q: 1,4-bis (4-aminophenoxy) benzene BAPP: 2,2-bis [4- (4-aminophenoxy) phenyl] propane 4,4′-DAPE: 4,4′-diaminodiphenyl ether PMDA: pyro Mellitic dianhydride BPDA: 3,3 ′, 4,4′-biphenyltetracarboxylic dianhydride DMAc: N, N-dimethylacetamide copper foil a: Ra = 0.104 μm, Rz = 0.398 μm, crude Height of formation = 0.12 μm, Ni = 0.38 mg / cm 2 , Co = 0 mg / cm 2
Copper b: Ra = 0.152μm, Rz = 0.806μm, roughened height = 0.09μm, Ni = 0.46mg / cm 2, Co = 0.05mg / cm 2
Copper foil c: Ra = 0.102 μm, Rz = 0.474 μm, roughening height = 0.25 μm, Ni = 0.01 mg / cm 2 , Co = 0 mg / cm 2
合成例1
500mlのセパラブルフラスコに、3.867gのDDA(7.24mmol)、18.951gのm−TB(89.27mmol)、255gのDMAcを投入し、室温、窒素気流下で撹拌した。完全に溶解した後、5.594gのBPDA(19.01mmol)及び16.588gのPMDA(76.05mmol)を添加し、室温で4時間撹拌してポリアミド酸溶液Aを得た。得られたポリアミド酸溶液Aの粘度は24,000cP、重量平均分子量(Mw)は138,000であった。
Synthesis example 1
To a 500 ml separable flask, 3.867 g DDA (7.24 mmol), 18.951 g m-TB (89.27 mmol), and 255 g DMAc were added, and stirred at room temperature under a nitrogen stream. After complete dissolution, 5.594 g of BPDA (19.01 mmol) and 16.588 g of PMDA (76.05 mmol) were added and stirred at room temperature for 4 hours to obtain a polyamic acid solution A. The resulting polyamic acid solution A had a viscosity of 24,000 cP and a weight average molecular weight (Mw) of 138,000.
合成例2
500mlのセパラブルフラスコに、14.990gのTPE−R(50.90mmol)、220gのDMAcを投入し、室温、窒素気流下で撹拌した。完全に溶解した後、15.010gのBPDA(51.31mmol)を添加し、室温で4時間撹拌してポリアミド酸溶液Bを得た。得られたポリアミド酸溶液Bの粘度は2,300cP、重量平均分子量(Mw)は165,000であった。
Synthesis example 2
In a 500 ml separable flask, 14.990 g of TPE-R (50.90 mmol) and 220 g of DMAc were added, and the mixture was stirred at room temperature under a nitrogen stream. After complete dissolution, 15.010 g of BPDA (51.31 mmol) was added and stirred at room temperature for 4 hours to obtain a polyamic acid solution B. The resulting polyamic acid solution B had a viscosity of 2,300 cP and a weight average molecular weight (Mw) of 165,000.
合成例3
500mlのセパラブルフラスコに、15.209gのTPE−R(52.02mmol)、220gのDMAcを投入し、室温、窒素気流下で撹拌した。完全に溶解した後、13.666gのBPDA(46.45mmol)及び1.126gのPMDA(5.16mmol)を添加し、室温で4時間撹拌してポリアミド酸溶液Cを得た。得られたポリアミド酸溶液Cの粘度は4,500cP、重量平均分子量(Mw)は248,000であった。
Synthesis example 3
In a 500 ml separable flask, 15.209 g of TPE-R (52.02 mmol) and 220 g of DMAc were added and stirred at room temperature under a nitrogen stream. After complete dissolution, 13.666 g of BPDA (46.45 mmol) and 1.126 g of PMDA (5.16 mmol) were added and stirred at room temperature for 4 hours to obtain a polyamic acid solution C. The resulting polyamic acid solution C had a viscosity of 4,500 cP and a weight average molecular weight (Mw) of 248,000.
合成例4
300mlのセパラブルフラスコに、9.370gのTPE−R(32.05mmol)、132gのDMAcを投入し、室温、窒素気流下で撹拌した。完全に溶解した後、6.549gのBPDA(22.26mmol)及び2.081gのPMDA(9.54mmol)を添加し、室温で4時間撹拌してポリアミド酸溶液Dを得た。得られたポリアミド酸溶液Dの粘度は3,200cP、重量平均分子量(Mw)は234,000であった。
Synthesis example 4
Into a 300 ml separable flask, 9.370 g of TPE-R (32.05 mmol) and 132 g of DMAc were added, and stirred at room temperature under a nitrogen stream. After complete dissolution, 6.549 g of BPDA (22.26 mmol) and 2.081 g of PMDA (9.54 mmol) were added and stirred at room temperature for 4 hours to obtain a polyamic acid solution D. The resulting polyamic acid solution D had a viscosity of 3,200 cP and a weight average molecular weight (Mw) of 234,000.
合成例5
500mlのセパラブルフラスコに、16.049gのTPE−R(54.90mmol)、220gのDMAcを投入し、室温、窒素気流下で撹拌した。完全に溶解した後、8.012gのBPDA(27.23mmol)及び5.940gのPMDA(27.23mmol)を添加し、室温で4時間撹拌してポリアミド酸溶液Eを得た。得られたポリアミド酸溶液Eの粘度は2,500cP、重量平均分子量(Mw)は219,000であった。
Synthesis example 5
In a 500 ml separable flask, 16.049 g of TPE-R (54.90 mmol) and 220 g of DMAc were added and stirred at room temperature under a nitrogen stream. After complete dissolution, 8.012 g of BPDA (27.23 mmol) and 5.940 g of PMDA (27.23 mmol) were added and stirred at room temperature for 4 hours to obtain a polyamic acid solution E. The resulting polyamic acid solution E had a viscosity of 2,500 cP and a weight average molecular weight (Mw) of 219,000.
合成例6
500mlのセパラブルフラスコに、6.897gのTPE−R(23.58mmol)、9.710gのBAPP(23.58mmol)及び220gのDMAcを投入し、室温、窒素気流下で撹拌した。完全に溶解した後、12.375gのBPDA(42.02mmol)及び1.020gのPMDA(4.67mmol)を添加し、室温で4時間撹拌してポリアミド酸溶液Fを得た。得られたポリアミド酸溶液Fの粘度は1,800cP、重量平均分子量(Mw)は196,000であった。
Synthesis Example 6
A 500 ml separable flask was charged with 6.897 g of TPE-R (23.58 mmol), 9.710 g of BAPP (23.58 mmol), and 220 g of DMAc, and stirred at room temperature under a nitrogen stream. After complete dissolution, 12.375 g of BPDA (42.02 mmol) and 1.020 g of PMDA (4.67 mmol) were added and stirred at room temperature for 4 hours to obtain a polyamic acid solution F. The resulting polyamic acid solution F had a viscosity of 1,800 cP and a weight average molecular weight (Mw) of 196,000.
合成例7
500mlのセパラブルフラスコに、7.597gのTPE−R(25.97mmol)、7.592gのAPB(25.97mmol)及び220gのDMAcを投入し、室温、窒素気流下で撹拌した。完全に溶解した後、13.685gのBPDA(46.46mmol)及び1.127gのPMDA(5.16mmol)を添加し、室温で4時間撹拌してポリアミド酸溶液Gを得た。得られたポリアミド酸溶液Gの粘度は2,200cP、重量平均分子量(Mw)は271,000であった。
Synthesis example 7
In a 500 ml separable flask, 7.597 g of TPE-R (25.97 mmol), 7.592 g of APB (25.97 mmol) and 220 g of DMAc were added and stirred at room temperature under a nitrogen stream. After complete dissolution, 13.685 g of BPDA (46.46 mmol) and 1.127 g of PMDA (5.16 mmol) were added and stirred at room temperature for 4 hours to obtain a polyamic acid solution G. The resulting polyamic acid solution G had a viscosity of 2,200 cP and a weight average molecular weight (Mw) of 271,000.
合成例8
500mlのセパラブルフラスコに、4.547gのTPE−R(15.54mmol)、10.603gのAPB(36.27mmol)及び220gのDMAcを投入し、室温、窒素気流下で撹拌した。完全に溶解した後、13.720gのBPDA(46.59mmol)及び1.130gのPMDA(5.18mmol)を添加し、室温で4時間撹拌してポリアミド酸溶液Hを得た。得られたポリアミド酸溶液Hの粘度は1,400cP、重量平均分子量(Mw)は229,000であった。
Synthesis Example 8
A 500 ml separable flask was charged with 4.547 g of TPE-R (15.54 mmol), 10.603 g of APB (36.27 mmol) and 220 g of DMAc, and stirred at room temperature under a nitrogen stream. After complete dissolution, 13.720 g of BPDA (46.59 mmol) and 1.130 g of PMDA (5.18 mmol) were added and stirred at room temperature for 4 hours to obtain a polyamic acid solution H. The resulting polyamic acid solution H had a viscosity of 1,400 cP and a weight average molecular weight (Mw) of 229,000.
合成例9
500mlのセパラブルフラスコに、7.059gのTPE−R(24.13mmol)、9.936gのBAPP(24.13mmol)及び220gのDMAcを投入し、室温、窒素気流下で撹拌した。完全に溶解した後、9.869gのBPDA(33.51mmol)及び3.136gのPMDA(14.36mmol)を添加し、室温で4時間撹拌してポリアミド酸溶液Iを得た。得られたポリアミド酸溶液Iの粘度は3,200cP、重量平均分子量(Mw)は199,000であった。
Synthesis Example 9
In a 500 ml separable flask, 7.059 g of TPE-R (24.13 mmol), 9.936 g of BAPP (24.13 mmol) and 220 g of DMAc were added and stirred at room temperature under a nitrogen stream. After complete dissolution, 9.869 g of BPDA (33.51 mmol) and 3.136 g of PMDA (14.36 mmol) were added and stirred at room temperature for 4 hours to obtain a polyamic acid solution I. The resulting polyamic acid solution I had a viscosity of 3,200 cP and a weight average molecular weight (Mw) of 199,000.
合成例10
500mlのセパラブルフラスコに、10.286gのTPE−R(35.16mmol)、6.205gのBAPP(15.07mmol)及び220gのDMAcを投入し、室温、窒素気流下で撹拌した。完全に溶解した後、10.252gのBPDA(34.81mmol)及び3.257gのPMDA(14.92mmol)を添加し、室温で4時間撹拌してポリアミド酸溶液Jを得た。得られたポリアミド酸溶液Jの粘度は1,000cP、重量平均分子量(Mw)は168,000であった。
Synthesis Example 10
A 500 ml separable flask was charged with 10.286 g of TPE-R (35.16 mmol), 6.205 g of BAPP (15.07 mmol) and 220 g of DMAc, and stirred at room temperature under a nitrogen stream. After complete dissolution, 10.252 g of BPDA (34.81 mmol) and 3.257 g of PMDA (14.92 mmol) were added and stirred at room temperature for 4 hours to obtain a polyamic acid solution J. The resulting polyamic acid solution J had a viscosity of 1,000 cP and a weight average molecular weight (Mw) of 168,000.
合成例11
500mlのセパラブルフラスコに、7.794gのTPE−R(26.64mmol)、7.788gのAPB(26.64mmol)及び220gのDMAcを投入し、室温、窒素気流下で撹拌した。完全に溶解した後、10.941gのBPDA(37.15mmol)及び3.476gのPMDA(15.92mmol)を添加し、室温で4時間撹拌してポリアミド酸溶液Kを得た。得られたポリアミド酸溶液Kの粘度は1,000cP、重量平均分子量(Mw)は217,000であった。
Synthesis Example 11
Into a 500 ml separable flask, 7.794 g of TPE-R (26.64 mmol), 7.788 g of APB (26.64 mmol) and 220 g of DMAc were added and stirred at room temperature under a nitrogen stream. After complete dissolution, 10.941 g of BPDA (37.15 mmol) and 3.476 g of PMDA (15.92 mmol) were added and stirred at room temperature for 4 hours to obtain a polyamic acid solution K. The resulting polyamic acid solution K had a viscosity of 1,000 cP and a weight average molecular weight (Mw) of 217,000.
合成例12
500mlのセパラブルフラスコに、10.911gのTPE−R(37.30mmol)、4.673gのAPB(15.98mmol)及び220gのDMAcを投入し、室温、窒素気流下で撹拌した。完全に溶解した後、10.941gのBPDA(37.15mmol)及び3.476gのPMDA(15.92mmol)を添加し、室温で4時間撹拌してポリアミド酸溶液Lを得た。得られたポリアミド酸溶液Lの粘度は4,800cP、重量平均分子量(Mw)は268,000であった。
Synthesis Example 12
A 500 ml separable flask was charged with 10.911 g of TPE-R (37.30 mmol), 4.673 g of APB (15.98 mmol) and 220 g of DMAc, and stirred at room temperature under a nitrogen stream. After complete dissolution, 10.941 g of BPDA (37.15 mmol) and 3.476 g of PMDA (15.92 mmol) were added and stirred at room temperature for 4 hours to obtain a polyamic acid solution L. The resulting polyamic acid solution L had a viscosity of 4,800 cP and a weight average molecular weight (Mw) of 268,000.
合成例13
300mlのセパラブルフラスコに、5.950gのTPE−R(20.32mmol)、3.584gのBAPP(8.71mmol)及び132gのDMAcを投入し、室温、窒素気流下で撹拌した。完全に溶解した後、8.466gのBPDA(28.74mmol)を添加し、室温で4時間撹拌してポリアミド酸溶液Mを得た。得られたポリアミド酸溶液Mの粘度は1,800cP、重量平均分子量(Mw)は175,000であった。
Synthesis Example 13
A 300 ml separable flask was charged with 5.950 g of TPE-R (20.32 mmol), 3.584 g of BAPP (8.71 mmol) and 132 g of DMAc, and stirred at room temperature under a nitrogen stream. After complete dissolution, 8.466 g of BPDA (28.74 mmol) was added and stirred at room temperature for 4 hours to obtain a polyamic acid solution M. The resulting polyamic acid solution M had a viscosity of 1,800 cP and a weight average molecular weight (Mw) of 175,000.
合成例14
300mlのセパラブルフラスコに、6.314gのTPE−R(21.57mmol)、2.702gのAPB(9.24mmol)及び132gのDMAcを投入し、室温、窒素気流下で撹拌した。完全に溶解した後、8.984gのBPDA(30.50mmol)を添加し、室温で4時間撹拌してポリアミド酸溶液Nを得た。得られたポリアミド酸溶液Nの粘度は2,100cP、重量平均分子量(Mw)は210,000であった。
Synthesis Example 14
A 300 ml separable flask was charged with 6.314 g of TPE-R (21.57 mmol), 2.702 g of APB (9.24 mmol) and 132 g of DMAc, and stirred at room temperature under a nitrogen stream. After complete dissolution, 8.984 g of BPDA (30.50 mmol) was added and stirred at room temperature for 4 hours to obtain a polyamic acid solution N. The resulting polyamic acid solution N had a viscosity of 2,100 cP and a weight average molecular weight (Mw) of 210,000.
合成例15
300mlのセパラブルフラスコに、6.314gのTPE−R(21.57mmol)、2.702gのTPE−Q(9.24mmol)及び132gのDMAcを投入し、室温、窒素気流下で撹拌した。完全に溶解した後、8.984gのBPDA(30.50mmol)を添加し、室温で4時間撹拌してポリアミド酸溶液Oを得た。得られたポリアミド酸溶液Oの粘度は2,700cP、重量平均分子量(Mw)は162,000であった。
Synthesis Example 15
A 300 ml separable flask was charged with 6.314 g of TPE-R (21.57 mmol), 2.702 g of TPE-Q (9.24 mmol) and 132 g of DMAc, and stirred at room temperature under a nitrogen stream. After complete dissolution, 8.984 g of BPDA (30.50 mmol) was added and stirred at room temperature for 4 hours to obtain a polyamic acid solution O. The resulting polyamic acid solution O had a viscosity of 2,700 cP and a weight average molecular weight (Mw) of 162,000.
合成例16
300mlのセパラブルフラスコに、6.627gのTPE−R(22.63mmol)、1.943gの4,4’−DAPE(9.70mmol)及び132gのDMAcを投入し、室温、窒素気流下で撹拌した。完全に溶解した後、9.430gのBPDA(32.01mmol)を添加し、室温で4時間撹拌してポリアミド酸溶液Pを得た。得られたポリアミド酸溶液Pの粘度は2,000cP、重量平均分子量(Mw)は149,000であった。
Synthesis Example 16
To a 300 ml separable flask, 6.627 g of TPE-R (22.63 mmol), 1.943 g of 4,4′-DAPE (9.70 mmol) and 132 g of DMAc were added and stirred at room temperature under a nitrogen stream. did. After complete dissolution, 9.430 g of BPDA (32.01 mmol) was added and stirred at room temperature for 4 hours to obtain a polyamic acid solution P. The resulting polyamic acid solution P had a viscosity of 2,000 cP and a weight average molecular weight (Mw) of 149,000.
合成例17
300mlのセパラブルフラスコに、10.681gのBAPP(26.02mmol)、1.127gのDDA(2.11mmol)及び132gのDMAcを投入し、室温、窒素気流下で撹拌した。完全に溶解した後、0.411gのBPDA(1.40mmol)及び5.782gのPMDA(26.51mmol)を添加し、室温で4時間撹拌してポリアミド酸溶液Qを得た。得られたポリアミド酸溶液Qの粘度は2,700cP、重量平均分子量(Mw)は233,000であった。
Synthesis Example 17
A 300 ml separable flask was charged with 10.681 g of BAPP (26.02 mmol), 1.127 g of DDA (2.11 mmol) and 132 g of DMAc, and stirred at room temperature under a nitrogen stream. After complete dissolution, 0.411 g of BPDA (1.40 mmol) and 5.782 g of PMDA (26.51 mmol) were added and stirred at room temperature for 4 hours to obtain a polyamic acid solution Q. The resulting polyamic acid solution Q had a viscosity of 2,700 cP and a weight average molecular weight (Mw) of 233,000.
合成例18
300mlのセパラブルフラスコに、9.788gのBAPP(23.84mmol)、1.743gのAPB(5.96mmol)及び132gのDMAcを投入し、室温、窒素気流下で撹拌した。完全に溶解した後、6.468gのPMDA(29.66mmol)を添加し、室温で4時間撹拌してポリアミド酸溶液Rを得た。得られたポリアミド酸溶液Rの粘度は9,000cP、重量平均分子量(Mw)は384,000であった。
Synthesis Example 18
To a 300 ml separable flask, 9.788 g of BAPP (23.84 mmol), 1.743 g of APB (5.96 mmol) and 132 g of DMAc were added and stirred at room temperature under a nitrogen stream. After complete dissolution, 6.468 g of PMDA (29.66 mmol) was added and stirred at room temperature for 4 hours to obtain a polyamic acid solution R. The resulting polyamic acid solution R had a viscosity of 9,000 cP and a weight average molecular weight (Mw) of 384,000.
合成例19
500mlのセパラブルフラスコに、16.505gのTPE−R(56.46mmol)及び220gのDMAcを投入し、室温、窒素気流下で撹拌した。完全に溶解した後、4.944gのBPDA(16.80mmol)及び8.511gのPMDA(39.21mmol)を添加し、室温で4時間撹拌してポリアミド酸溶液Sを得た。得られたポリアミド酸溶液Sの粘度は2,000cP、重量平均分子量(Mw)は208,000であった。
Synthesis Example 19
Into a 500 ml separable flask, 16.505 g of TPE-R (56.46 mmol) and 220 g of DMAc were added, and stirred at room temperature under a nitrogen stream. After complete dissolution, 4.944 g of BPDA (16.80 mmol) and 8.511 g of PMDA (39.21 mmol) were added and stirred at room temperature for 4 hours to obtain a polyamic acid solution S. The resulting polyamic acid solution S had a viscosity of 2,000 cP and a weight average molecular weight (Mw) of 208,000.
合成例20
500mlのセパラブルフラスコに、3.986gのTPE−R(13.62mmol)、13.091gのBAPP(31.79mmol)及び220gのDMAcを投入し、室温、窒素気流下で撹拌した。完全に溶解した後、11.941gのBPDA(40.54mmol)及び0.984gのPMDA(4.50mmol)を添加し、室温で4時間撹拌してポリアミド酸溶液Tを得た。得られたポリアミド酸溶液Tの粘度は2,700cP、重量平均分子量(Mw)は214,000であった。
Synthesis Example 20
A 500 ml separable flask was charged with 3.986 g of TPE-R (13.62 mmol), 13.011 g of BAPP (31.79 mmol) and 220 g of DMAc, and stirred at room temperature under a nitrogen stream. After complete dissolution, 11.941 g of BPDA (40.54 mmol) and 0.984 g of PMDA (4.50 mmol) were added and stirred at room temperature for 4 hours to obtain a polyamic acid solution T. The resulting polyamic acid solution T had a viscosity of 2,700 cP and a weight average molecular weight (Mw) of 214,000.
以上の合成例1〜20で用いた原料の組成とポリアミド酸溶液の粘度及び重量平均分子量(Mw)を、表1及び表2に示した。 Tables 1 and 2 show the composition of the raw materials used in the above Synthesis Examples 1 to 20, the viscosity of the polyamic acid solution, and the weight average molecular weight (Mw).
実施例1
銅箔a上に、熱処理後の厚みが約2μmとなるようポリアミド酸溶液Bを均一に塗布し、120℃で1分30秒加熱乾燥して溶媒を除去した。その上に、熱処理後の厚みが約25μmとなるようポリアミド酸溶液Aを均一に塗布し、120℃で3分間加熱乾燥して溶媒を除去した。その後、130℃から360℃まで段階的に昇温させて、イミド化を行った。得られた銅張積層板について、回路加工を行い、ピール試験用のサンプルを得た。このサンプルのピール強度及び150℃で250時間と500時間の熱処理を行った後のピール強度を表3に示す。
Example 1
On the copper foil a, the polyamic acid solution B was uniformly applied so that the thickness after the heat treatment was about 2 μm, and the solvent was removed by heating and drying at 120 ° C. for 1 minute 30 seconds. On top of that, the polyamic acid solution A was uniformly applied so that the thickness after heat treatment was about 25 μm, and the solvent was removed by heating at 120 ° C. for 3 minutes. Thereafter, the temperature was raised stepwise from 130 ° C. to 360 ° C. to perform imidization. About the obtained copper clad laminated board, circuit processing was performed and the sample for a peel test was obtained. Table 3 shows the peel strength of this sample and the peel strength after heat treatment at 150 ° C. for 250 hours and 500 hours.
実施例2
銅箔a上に、熱処理後の厚みが約2μmとなるようポリアミド酸溶液Cを均一に塗布し、120℃で1分30秒加熱乾燥して溶媒を除去した。その上に、熱処理後の厚みが約25μmとなるようポリアミド酸溶液Aを均一に塗布し、120℃で3分間加熱乾燥して溶媒を除去した。その後、130℃から360℃まで段階的に昇温させて、イミド化を行った。得られた銅張積層板について、回路加工を行い、ピール試験用のサンプルを得た。このサンプルのピール強度及び150℃で250時間と500時間の熱処理を行った後のピール強度を表3に示す。
Example 2
On the copper foil a, the polyamic acid solution C was uniformly applied so that the thickness after the heat treatment was about 2 μm, and the solvent was removed by heating and drying at 120 ° C. for 1 minute 30 seconds. On top of that, the polyamic acid solution A was uniformly applied so that the thickness after heat treatment was about 25 μm, and the solvent was removed by heating at 120 ° C. for 3 minutes. Thereafter, the temperature was raised stepwise from 130 ° C. to 360 ° C. to perform imidization. About the obtained copper clad laminated board, circuit processing was performed and the sample for a peel test was obtained. Table 3 shows the peel strength of this sample and the peel strength after heat treatment at 150 ° C. for 250 hours and 500 hours.
実施例3
銅箔a上に、熱処理後の厚みが約2μmとなるようポリアミド酸溶液Dを均一に塗布し、120℃で1分30秒加熱乾燥して溶媒を除去した。その上に、熱処理後の厚みが約25μmとなるようポリアミド酸溶液Aを均一に塗布し、120℃で3分間加熱乾燥して溶媒を除去した。その後、130℃から360℃まで段階的に昇温させて、イミド化を行った。得られた銅張積層板について、回路加工を行い、ピール試験用のサンプルを得た。このサンプルのピール強度及び150℃で250時間と500時間の熱処理を行った後のピール強度を表3に示す。
Example 3
On the copper foil a, the polyamic acid solution D was uniformly applied so that the thickness after the heat treatment was about 2 μm, and the solvent was removed by heating and drying at 120 ° C. for 1 minute 30 seconds. On top of that, the polyamic acid solution A was uniformly applied so that the thickness after heat treatment was about 25 μm, and the solvent was removed by heating at 120 ° C. for 3 minutes. Thereafter, the temperature was raised stepwise from 130 ° C. to 360 ° C. to perform imidization. About the obtained copper clad laminated board, circuit processing was performed and the sample for a peel test was obtained. Table 3 shows the peel strength of this sample and the peel strength after heat treatment at 150 ° C. for 250 hours and 500 hours.
実施例4
銅箔a上に、熱処理後の厚みが約2μmとなるようポリアミド酸溶液Fを均一に塗布し、120℃で1分30秒加熱乾燥して溶媒を除去した。その上に、熱処理後の厚みが約25μmとなるようポリアミド酸溶液Aを均一に塗布し、120℃で3分間加熱乾燥して溶媒を除去した。その後、130℃から360℃まで段階的に昇温させて、イミド化を行った。得られた銅張積層板について、回路加工を行い、ピール試験用のサンプルを得た。このサンプルのピール強度及び150℃で250時間と500時間の熱処理を行った後のピール強度を表3に示す。
Example 4
On the copper foil a, the polyamic acid solution F was uniformly applied so that the thickness after the heat treatment was about 2 μm, and the solvent was removed by heating and drying at 120 ° C. for 1 minute 30 seconds. On top of that, the polyamic acid solution A was uniformly applied so that the thickness after heat treatment was about 25 μm, and the solvent was removed by heating at 120 ° C. for 3 minutes. Thereafter, the temperature was raised stepwise from 130 ° C. to 360 ° C. to perform imidization. About the obtained copper clad laminated board, circuit processing was performed and the sample for a peel test was obtained. Table 3 shows the peel strength of this sample and the peel strength after heat treatment at 150 ° C. for 250 hours and 500 hours.
実施例5
銅箔a上に、熱処理後の厚みが約2μmとなるようポリアミド酸溶液Gを均一に塗布し、120℃で1分30秒加熱乾燥して溶媒を除去した。その上に、熱処理後の厚みが約25μmとなるようポリアミド酸溶液Aを均一に塗布し、120℃で3分間加熱乾燥して溶媒を除去した。その後、130℃から360℃まで段階的に昇温させて、イミド化を行った。得られた銅張積層板について、回路加工を行い、ピール試験用のサンプルを得た。このサンプルのピール強度及び150℃で250時間と500時間の熱処理を行った後のピール強度を表3に示す。
Example 5
On the copper foil a, the polyamic acid solution G was uniformly applied so that the thickness after heat treatment was about 2 μm, and the solvent was removed by heating and drying at 120 ° C. for 1 minute and 30 seconds. On top of that, the polyamic acid solution A was uniformly applied so that the thickness after heat treatment was about 25 μm, and the solvent was removed by heating at 120 ° C. for 3 minutes. Thereafter, the temperature was raised stepwise from 130 ° C. to 360 ° C. to perform imidization. About the obtained copper clad laminated board, circuit processing was performed and the sample for a peel test was obtained. Table 3 shows the peel strength of this sample and the peel strength after heat treatment at 150 ° C. for 250 hours and 500 hours.
実施例6
銅箔a上に、熱処理後の厚みが約2μmとなるようポリアミド酸溶液Hを均一に塗布し、120℃で1分30秒加熱乾燥して溶媒を除去した。その上に、熱処理後の厚みが約25μmとなるようポリアミド酸溶液Aを均一に塗布し、120℃で3分間加熱乾燥して溶媒を除去した。その後、130℃から360℃まで段階的に昇温させて、イミド化を行った。得られた銅張積層板について、回路加工を行い、ピール試験用のサンプルを得た。このサンプルのピール強度及び150℃で250時間と500時間の熱処理を行った後のピール強度を表3に示す。
Example 6
On the copper foil a, the polyamic acid solution H was uniformly applied so that the thickness after the heat treatment was about 2 μm, and the solvent was removed by heating and drying at 120 ° C. for 1 minute and 30 seconds. On top of that, the polyamic acid solution A was uniformly applied so that the thickness after heat treatment was about 25 μm, and the solvent was removed by heating at 120 ° C. for 3 minutes. Thereafter, the temperature was raised stepwise from 130 ° C. to 360 ° C. to perform imidization. About the obtained copper clad laminated board, circuit processing was performed and the sample for a peel test was obtained. Table 3 shows the peel strength of this sample and the peel strength after heat treatment at 150 ° C. for 250 hours and 500 hours.
実施例7
銅箔b上に、熱処理後の厚みが約2μmとなるようポリアミド酸溶液Dを均一に塗布し、120℃で1分30秒加熱乾燥して溶媒を除去した。その上に、熱処理後の厚みが約25μmとなるようポリアミド酸溶液Aを均一に塗布し、120℃で3分間加熱乾燥して溶媒を除去した。その後、130℃から360℃まで段階的に昇温させて、イミド化を行った。得られた銅張積層板について、回路加工を行い、ピール試験用のサンプルを得た。このサンプルのピール強度及び150℃で250時間と500時間の熱処理を行った後のピール強度を表3に示す。
Example 7
On the copper foil b, the polyamic acid solution D was uniformly applied so that the thickness after the heat treatment was about 2 μm, and the solvent was removed by heating and drying at 120 ° C. for 1 minute 30 seconds. On top of that, the polyamic acid solution A was uniformly applied so that the thickness after heat treatment was about 25 μm, and the solvent was removed by heating at 120 ° C. for 3 minutes. Thereafter, the temperature was raised stepwise from 130 ° C. to 360 ° C. to perform imidization. About the obtained copper clad laminated board, circuit processing was performed and the sample for a peel test was obtained. Table 3 shows the peel strength of this sample and the peel strength after heat treatment at 150 ° C. for 250 hours and 500 hours.
実施例8
銅箔b上に、熱処理後の厚みが約2μmとなるようポリアミド酸溶液Gを均一に塗布し、120℃で1分30秒加熱乾燥して溶媒を除去した。その上に、熱処理後の厚みが約25μmとなるようポリアミド酸溶液Aを均一に塗布し、120℃で3分間加熱乾燥して溶媒を除去した。その後、130℃から360℃まで段階的に昇温させて、イミド化を行った。得られた銅張積層板について、回路加工を行い、ピール試験用のサンプルを得た。このサンプルのピール強度及び150℃で250時間と500時間の熱処理を行った後のピール強度を表3に示す。
Example 8
On the copper foil b, the polyamic acid solution G was uniformly applied so that the thickness after the heat treatment was about 2 μm, and the solvent was removed by heating and drying at 120 ° C. for 1 minute 30 seconds. On top of that, the polyamic acid solution A was uniformly applied so that the thickness after heat treatment was about 25 μm, and the solvent was removed by heating at 120 ° C. for 3 minutes. Thereafter, the temperature was raised stepwise from 130 ° C. to 360 ° C. to perform imidization. About the obtained copper clad laminated board, circuit processing was performed and the sample for a peel test was obtained. Table 3 shows the peel strength of this sample and the peel strength after heat treatment at 150 ° C. for 250 hours and 500 hours.
実施例9
銅箔b上に、熱処理後の厚みが約2μmとなるようポリアミド酸溶液Hを均一に塗布し、120℃で1分30秒加熱乾燥して溶媒を除去した。その上に、熱処理後の厚みが約25μmとなるようポリアミド酸溶液Aを均一に塗布し、120℃で3分間加熱乾燥して溶媒を除去した。その後、130℃から360℃まで段階的に昇温させて、イミド化を行った。得られた銅張積層板について、回路加工を行い、ピール試験用のサンプルを得た。このサンプルのピール強度及び150℃で250時間と500時間の熱処理を行った後のピール強度を表3に示す。
Example 9
On the copper foil b, the polyamic acid solution H was uniformly applied so that the thickness after the heat treatment was about 2 μm, and the solvent was removed by heating and drying at 120 ° C. for 1 minute 30 seconds. On top of that, the polyamic acid solution A was uniformly applied so that the thickness after heat treatment was about 25 μm, and the solvent was removed by heating at 120 ° C. for 3 minutes. Thereafter, the temperature was raised stepwise from 130 ° C. to 360 ° C. to perform imidization. About the obtained copper clad laminated board, circuit processing was performed and the sample for a peel test was obtained. Table 3 shows the peel strength of this sample and the peel strength after heat treatment at 150 ° C. for 250 hours and 500 hours.
実施例10
銅箔b上に、熱処理後の厚みが約2μmとなるようポリアミド酸溶液Iを均一に塗布し、120℃で1分30秒加熱乾燥して溶媒を除去した。その上に、熱処理後の厚みが約25μmとなるようポリアミド酸溶液Aを均一に塗布し、120℃で3分間加熱乾燥して溶媒を除去した。その後、130℃から360℃まで段階的に昇温させて、イミド化を行った。得られた銅張積層板について、回路加工を行い、ピール試験用のサンプルを得た。このサンプルのピール強度及び150℃で250時間と500時間の熱処理を行った後のピール強度を表3に示す。
Example 10
On the copper foil b, the polyamic acid solution I was uniformly applied so that the thickness after the heat treatment was about 2 μm, and the solvent was removed by heating and drying at 120 ° C. for 1 minute 30 seconds. On top of that, the polyamic acid solution A was uniformly applied so that the thickness after heat treatment was about 25 μm, and the solvent was removed by heating at 120 ° C. for 3 minutes. Thereafter, the temperature was raised stepwise from 130 ° C. to 360 ° C. to perform imidization. About the obtained copper clad laminated board, circuit processing was performed and the sample for a peel test was obtained. Table 3 shows the peel strength of this sample and the peel strength after heat treatment at 150 ° C. for 250 hours and 500 hours.
実施例11
銅箔b上に、熱処理後の厚みが約2μmとなるようポリアミド酸溶液Jを均一に塗布し、120℃で1分30秒加熱乾燥して溶媒を除去した。その上に、熱処理後の厚みが約25μmとなるようポリアミド酸溶液Aを均一に塗布し、120℃で3分間加熱乾燥して溶媒を除去した。その後、130℃から360℃まで段階的に昇温させて、イミド化を行った。得られた銅張積層板について、回路加工を行い、ピール試験用のサンプルを得た。このサンプルのピール強度及び150℃で250時間と500時間の熱処理を行った後のピール強度を表3に示す。
Example 11
On the copper foil b, the polyamic acid solution J was uniformly applied so that the thickness after the heat treatment was about 2 μm, and the solvent was removed by heating and drying at 120 ° C. for 1 minute 30 seconds. On top of that, the polyamic acid solution A was uniformly applied so that the thickness after heat treatment was about 25 μm, and the solvent was removed by heating at 120 ° C. for 3 minutes. Thereafter, the temperature was raised stepwise from 130 ° C. to 360 ° C. to perform imidization. About the obtained copper clad laminated board, circuit processing was performed and the sample for a peel test was obtained. Table 3 shows the peel strength of this sample and the peel strength after heat treatment at 150 ° C. for 250 hours and 500 hours.
実施例12
銅箔b上に、熱処理後の厚みが約2μmとなるようポリアミド酸溶液Kを均一に塗布し、120℃で1分30秒加熱乾燥して溶媒を除去した。その上に、熱処理後の厚みが約25μmとなるようポリアミド酸溶液Aを均一に塗布し、120℃で3分間加熱乾燥して溶媒を除去した。その後、130℃から360℃まで段階的に昇温させて、イミド化を行った。得られた銅張積層板について、回路加工を行い、ピール試験用のサンプルを得た。このサンプルのピール強度及び150℃で250時間と500時間の熱処理を行った後のピール強度を表3に示す。
Example 12
On the copper foil b, the polyamic acid solution K was uniformly applied so that the thickness after the heat treatment was about 2 μm, and the solvent was removed by heating and drying at 120 ° C. for 1 minute and 30 seconds. On top of that, the polyamic acid solution A was uniformly applied so that the thickness after heat treatment was about 25 μm, and the solvent was removed by heating at 120 ° C. for 3 minutes. Thereafter, the temperature was raised stepwise from 130 ° C. to 360 ° C. to perform imidization. About the obtained copper clad laminated board, circuit processing was performed and the sample for a peel test was obtained. Table 3 shows the peel strength of this sample and the peel strength after heat treatment at 150 ° C. for 250 hours and 500 hours.
実施例13
銅箔b上に、熱処理後の厚みが約2μmとなるようポリアミド酸溶液Lを均一に塗布し、120℃で1分30秒加熱乾燥して溶媒を除去した。その上に、熱処理後の厚みが約25μmとなるようポリアミド酸溶液Aを均一に塗布し、120℃で3分間加熱乾燥して溶媒を除去した。その後、130℃から360℃まで段階的に昇温させて、イミド化を行った。得られた銅張積層板について、回路加工を行い、ピール試験用のサンプルを得た。このサンプルのピール強度及び150℃で250時間と500時間の熱処理を行った後のピール強度を表3に示す。
Example 13
On the copper foil b, the polyamic acid solution L was uniformly applied so that the thickness after the heat treatment was about 2 μm, and the solvent was removed by heating and drying at 120 ° C. for 1 minute and 30 seconds. On top of that, the polyamic acid solution A was uniformly applied so that the thickness after heat treatment was about 25 μm, and the solvent was removed by heating at 120 ° C. for 3 minutes. Thereafter, the temperature was raised stepwise from 130 ° C. to 360 ° C. to perform imidization. About the obtained copper clad laminated board, circuit processing was performed and the sample for a peel test was obtained. Table 3 shows the peel strength of this sample and the peel strength after heat treatment at 150 ° C. for 250 hours and 500 hours.
実施例14
銅箔c上に、熱処理後の厚みが約2μmとなるようポリアミド酸溶液Eを均一に塗布し、120℃で1分30秒加熱乾燥して溶媒を除去した。その上に、熱処理後の厚みが約25μmとなるようポリアミド酸溶液Aを均一に塗布し、120℃で3分間加熱乾燥して溶媒を除去した。その後、130℃から360℃まで段階的に昇温させて、イミド化を行った。得られた銅張積層板について、回路加工を行い、ピール試験用のサンプルを得た。このサンプルのピール強度及び150℃で250時間と500時間の熱処理を行った後のピール強度を表3に示す。
Example 14
On the copper foil c, the polyamic acid solution E was uniformly applied so that the thickness after the heat treatment was about 2 μm, and the solvent was removed by heating and drying at 120 ° C. for 1 minute and 30 seconds. On top of that, the polyamic acid solution A was uniformly applied so that the thickness after heat treatment was about 25 μm, and the solvent was removed by heating at 120 ° C. for 3 minutes. Thereafter, the temperature was raised stepwise from 130 ° C. to 360 ° C. to perform imidization. About the obtained copper clad laminated board, circuit processing was performed and the sample for a peel test was obtained. Table 3 shows the peel strength of this sample and the peel strength after heat treatment at 150 ° C. for 250 hours and 500 hours.
実施例15
銅箔c上に、熱処理後の厚みが約2μmとなるようポリアミド酸溶液Gを均一に塗布し、120℃で1分30秒加熱乾燥して溶媒を除去した。その上に、熱処理後の厚みが約25μmとなるようポリアミド酸溶液Aを均一に塗布し、120℃で3分間加熱乾燥して溶媒を除去した。その後、130℃から360℃まで段階的に昇温させて、イミド化を行った。得られた銅張積層板について、回路加工を行い、ピール試験用のサンプルを得た。このサンプルのピール強度及び150℃で250時間と500時間の熱処理を行った後のピール強度を表3に示す。
Example 15
On the copper foil c, the polyamic acid solution G was uniformly applied so that the thickness after heat treatment was about 2 μm, and the solvent was removed by heating and drying at 120 ° C. for 1 minute and 30 seconds. On top of that, the polyamic acid solution A was uniformly applied so that the thickness after heat treatment was about 25 μm, and the solvent was removed by heating at 120 ° C. for 3 minutes. Thereafter, the temperature was raised stepwise from 130 ° C. to 360 ° C. to perform imidization. About the obtained copper clad laminated board, circuit processing was performed and the sample for a peel test was obtained. Table 3 shows the peel strength of this sample and the peel strength after heat treatment at 150 ° C. for 250 hours and 500 hours.
実施例16
銅箔c上に、熱処理後の厚みが約2μmとなるようポリアミド酸溶液Hを均一に塗布し、120℃で1分30秒加熱乾燥して溶媒を除去した。その上に、熱処理後の厚みが約25μmとなるようポリアミド酸溶液Aを均一に塗布し、120℃で3分間加熱乾燥して溶媒を除去した。その後、130℃から360℃まで段階的に昇温させて、イミド化を行った。得られた銅張積層板について、回路加工を行い、ピール試験用のサンプルを得た。このサンプルのピール強度及び150℃で250時間と500時間の熱処理を行った後のピール強度を表3に示す。
Example 16
On the copper foil c, the polyamic acid solution H was uniformly applied so that the thickness after the heat treatment was about 2 μm, and the solvent was removed by heating and drying at 120 ° C. for 1 minute and 30 seconds. On top of that, the polyamic acid solution A was uniformly applied so that the thickness after heat treatment was about 25 μm, and the solvent was removed by heating at 120 ° C. for 3 minutes. Thereafter, the temperature was raised stepwise from 130 ° C. to 360 ° C. to perform imidization. About the obtained copper clad laminated board, circuit processing was performed and the sample for a peel test was obtained. Table 3 shows the peel strength of this sample and the peel strength after heat treatment at 150 ° C. for 250 hours and 500 hours.
実施例17
銅箔c上に、熱処理後の厚みが約2μmとなるようポリアミド酸溶液Iを均一に塗布し、120℃で1分30秒加熱乾燥して溶媒を除去した。その上に、熱処理後の厚みが約25μmとなるようポリアミド酸溶液Aを均一に塗布し、120℃で3分間加熱乾燥して溶媒を除去した。その後、130℃から360℃まで段階的に昇温させて、イミド化を行った。得られた銅張積層板について、回路加工を行い、ピール試験用のサンプルを得た。このサンプルのピール強度及び150℃で250時間と500時間の熱処理を行った後のピール強度を表3に示す。
Example 17
On the copper foil c, the polyamic acid solution I was uniformly applied so that the thickness after heat treatment was about 2 μm, and the solvent was removed by heating and drying at 120 ° C. for 1 minute 30 seconds. On top of that, the polyamic acid solution A was uniformly applied so that the thickness after heat treatment was about 25 μm, and the solvent was removed by heating at 120 ° C. for 3 minutes. Thereafter, the temperature was raised stepwise from 130 ° C. to 360 ° C. to perform imidization. About the obtained copper clad laminated board, circuit processing was performed and the sample for a peel test was obtained. Table 3 shows the peel strength of this sample and the peel strength after heat treatment at 150 ° C. for 250 hours and 500 hours.
実施例18
銅箔c上に、熱処理後の厚みが約2μmとなるようポリアミド酸溶液Jを均一に塗布し、120℃で1分30秒加熱乾燥して溶媒を除去した。その上に、熱処理後の厚みが約25μmとなるようポリアミド酸溶液Aを均一に塗布し、120℃で3分間加熱乾燥して溶媒を除去した。その後、130℃から360℃まで段階的に昇温させて、イミド化を行った。得られた銅張積層板について、回路加工を行い、ピール試験用のサンプルを得た。このサンプルのピール強度及び150℃で250時間と500時間の熱処理を行った後のピール強度を表3に示す。
Example 18
On the copper foil c, the polyamic acid solution J was uniformly applied so that the thickness after the heat treatment was about 2 μm, and the solvent was removed by heating and drying at 120 ° C. for 1 minute 30 seconds. On top of that, the polyamic acid solution A was uniformly applied so that the thickness after heat treatment was about 25 μm, and the solvent was removed by heating at 120 ° C. for 3 minutes. Thereafter, the temperature was raised stepwise from 130 ° C. to 360 ° C. to perform imidization. About the obtained copper clad laminated board, circuit processing was performed and the sample for a peel test was obtained. Table 3 shows the peel strength of this sample and the peel strength after heat treatment at 150 ° C. for 250 hours and 500 hours.
実施例19
銅箔c上に、熱処理後の厚みが約2μmとなるようポリアミド酸溶液Kを均一に塗布し、120℃で1分30秒加熱乾燥して溶媒を除去した。その上に、熱処理後の厚みが約25μmとなるようポリアミド酸溶液Aを均一に塗布し、120℃で3分間加熱乾燥して溶媒を除去した。その後、130℃から360℃まで段階的に昇温させて、イミド化を行った。得られた銅張積層板について、回路加工を行い、ピール試験用のサンプルを得た。このサンプルのピール強度及び150℃で250時間と500時間の熱処理を行った後のピール強度を表3に示す。
Example 19
On the copper foil c, the polyamic acid solution K was uniformly applied so that the thickness after the heat treatment was about 2 μm, and the solvent was removed by heating and drying at 120 ° C. for 1 minute and 30 seconds. On top of that, the polyamic acid solution A was uniformly applied so that the thickness after heat treatment was about 25 μm, and the solvent was removed by heating at 120 ° C. for 3 minutes. Thereafter, the temperature was raised stepwise from 130 ° C. to 360 ° C. to perform imidization. About the obtained copper clad laminated board, circuit processing was performed and the sample for a peel test was obtained. Table 3 shows the peel strength of this sample and the peel strength after heat treatment at 150 ° C. for 250 hours and 500 hours.
実施例20
銅箔c上に、熱処理後の厚みが約2μmとなるようポリアミド酸溶液Lを均一に塗布し、120℃で1分30秒加熱乾燥して溶媒を除去した。その上に、熱処理後の厚みが約25μmとなるようポリアミド酸溶液Aを均一に塗布し、120℃で3分間加熱乾燥して溶媒を除去した。その後、130℃から360℃まで段階的に昇温させて、イミド化を行った。得られた銅張積層板について、回路加工を行い、ピール試験用のサンプルを得た。このサンプルのピール強度及び150℃で250時間と500時間の熱処理を行った後のピール強度を表3に示す。
Example 20
On the copper foil c, the polyamic acid solution L was uniformly applied so that the thickness after the heat treatment was about 2 μm, and the solvent was removed by heating and drying at 120 ° C. for 1 minute 30 seconds. On top of that, the polyamic acid solution A was uniformly applied so that the thickness after heat treatment was about 25 μm, and the solvent was removed by heating at 120 ° C. for 3 minutes. Thereafter, the temperature was raised stepwise from 130 ° C. to 360 ° C. to perform imidization. About the obtained copper clad laminated board, circuit processing was performed and the sample for a peel test was obtained. Table 3 shows the peel strength of this sample and the peel strength after heat treatment at 150 ° C. for 250 hours and 500 hours.
実施例21
銅箔c上に、熱処理後の厚みが約2μmとなるようポリアミド酸溶液Mを均一に塗布し、120℃で1分30秒加熱乾燥して溶媒を除去した。その上に、熱処理後の厚みが約25μmとなるようポリアミド酸溶液Aを均一に塗布し、120℃で3分間加熱乾燥して溶媒を除去した。その後、130℃から360℃まで段階的に昇温させて、イミド化を行った。得られた銅張積層板について、回路加工を行い、ピール試験用のサンプルを得た。このサンプルのピール強度及び150℃で250時間と500時間の熱処理を行った後のピール強度を表3に示す。
Example 21
On the copper foil c, the polyamic acid solution M was uniformly applied so that the thickness after the heat treatment was about 2 μm, and the solvent was removed by heating and drying at 120 ° C. for 1 minute 30 seconds. On top of that, the polyamic acid solution A was uniformly applied so that the thickness after heat treatment was about 25 μm, and the solvent was removed by heating at 120 ° C. for 3 minutes. Thereafter, the temperature was raised stepwise from 130 ° C. to 360 ° C. to perform imidization. About the obtained copper clad laminated board, circuit processing was performed and the sample for a peel test was obtained. Table 3 shows the peel strength of this sample and the peel strength after heat treatment at 150 ° C. for 250 hours and 500 hours.
実施例22
銅箔c上に、熱処理後の厚みが約2μmとなるようポリアミド酸溶液Nを均一に塗布し、120℃で1分30秒加熱乾燥して溶媒を除去した。その上に、熱処理後の厚みが約25μmとなるようポリアミド酸溶液Aを均一に塗布し、120℃で3分間加熱乾燥して溶媒を除去した。その後、130℃から360℃まで段階的に昇温させて、イミド化を行った。得られた銅張積層板について、回路加工を行い、ピール試験用のサンプルを得た。このサンプルのピール強度及び150℃で250時間と500時間の熱処理を行った後のピール強度を表3に示す。
Example 22
On the copper foil c, the polyamic acid solution N was uniformly applied so that the thickness after the heat treatment was about 2 μm, and the solvent was removed by heating and drying at 120 ° C. for 1 minute and 30 seconds. On top of that, the polyamic acid solution A was uniformly applied so that the thickness after heat treatment was about 25 μm, and the solvent was removed by heating at 120 ° C. for 3 minutes. Thereafter, the temperature was raised stepwise from 130 ° C. to 360 ° C. to perform imidization. About the obtained copper clad laminated board, circuit processing was performed and the sample for a peel test was obtained. Table 3 shows the peel strength of this sample and the peel strength after heat treatment at 150 ° C. for 250 hours and 500 hours.
実施例23
銅箔c上に、熱処理後の厚みが約2μmとなるようポリアミド酸溶液Oを均一に塗布し、120℃で1分30秒加熱乾燥して溶媒を除去した。その上に、熱処理後の厚みが約25μmとなるようポリアミド酸溶液Aを均一に塗布し、120℃で3分間加熱乾燥して溶媒を除去した。その後、130℃から360℃まで段階的に昇温させて、イミド化を行った。得られた銅張積層板について、回路加工を行い、ピール試験用のサンプルを得た。このサンプルのピール強度及び150℃で250時間と500時間の熱処理を行った後のピール強度を表3に示す。
Example 23
On the copper foil c, the polyamic acid solution O was uniformly applied so that the thickness after the heat treatment was about 2 μm, and the solvent was removed by heating and drying at 120 ° C. for 1 minute and 30 seconds. On top of that, the polyamic acid solution A was uniformly applied so that the thickness after heat treatment was about 25 μm, and the solvent was removed by heating at 120 ° C. for 3 minutes. Thereafter, the temperature was raised stepwise from 130 ° C. to 360 ° C. to perform imidization. About the obtained copper clad laminated board, circuit processing was performed and the sample for a peel test was obtained. Table 3 shows the peel strength of this sample and the peel strength after heat treatment at 150 ° C. for 250 hours and 500 hours.
実施例24
銅箔c上に、熱処理後の厚みが約2μmとなるようポリアミド酸溶液Pを均一に塗布し、120℃で1分30秒加熱乾燥して溶媒を除去した。その上に、熱処理後の厚みが約25μmとなるようポリアミド酸溶液Aを均一に塗布し、120℃で3分間加熱乾燥して溶媒を除去した。その後、130℃から360℃まで段階的に昇温させて、イミド化を行った。得られた銅張積層板について、回路加工を行い、ピール試験用のサンプルを得た。このサンプルのピール強度及び150℃で250時間と500時間の熱処理を行った後のピール強度を表3に示す。
Example 24
On the copper foil c, the polyamic acid solution P was uniformly applied so that the thickness after heat treatment was about 2 μm, and the solvent was removed by heating and drying at 120 ° C. for 1 minute and 30 seconds. On top of that, the polyamic acid solution A was uniformly applied so that the thickness after heat treatment was about 25 μm, and the solvent was removed by heating at 120 ° C. for 3 minutes. Thereafter, the temperature was raised stepwise from 130 ° C. to 360 ° C. to perform imidization. About the obtained copper clad laminated board, circuit processing was performed and the sample for a peel test was obtained. Table 3 shows the peel strength of this sample and the peel strength after heat treatment at 150 ° C. for 250 hours and 500 hours.
比較例1
銅箔a上に、熱処理後の厚みが約2μmとなるようポリアミド酸溶液Qを均一に塗布し、120℃で1分30秒加熱乾燥して溶媒を除去した。その上に、熱処理後の厚みが約25μmとなるようポリアミド酸溶液Aを均一に塗布し、120℃で3分間加熱乾燥して溶媒を除去した。その後、130℃から360℃まで段階的に昇温させて、イミド化を行った。得られた銅張積層板について、回路加工を行い、ピール試験用のサンプルを得た。このサンプルのピール強度及び150℃で250時間と500時間の熱処理を行った後のピール強度を表3に示す。
Comparative Example 1
On the copper foil a, the polyamic acid solution Q was uniformly applied so that the thickness after heat treatment was about 2 μm, and the solvent was removed by heating and drying at 120 ° C. for 1 minute and 30 seconds. On top of that, the polyamic acid solution A was uniformly applied so that the thickness after heat treatment was about 25 μm, and the solvent was removed by heating at 120 ° C. for 3 minutes. Thereafter, the temperature was raised stepwise from 130 ° C. to 360 ° C. to perform imidization. About the obtained copper clad laminated board, circuit processing was performed and the sample for a peel test was obtained. Table 3 shows the peel strength of this sample and the peel strength after heat treatment at 150 ° C. for 250 hours and 500 hours.
比較例2
銅箔a上に、熱処理後の厚みが約2μmとなるようポリアミド酸溶液Rを均一に塗布し、120℃で1分30秒加熱乾燥して溶媒を除去した。その上に、熱処理後の厚みが約25μmとなるようポリアミド酸溶液Aを均一に塗布し、120℃で3分間加熱乾燥して溶媒を除去した。その後、130℃から360℃まで段階的に昇温させて、イミド化を行った。得られた銅張積層板について、回路加工を行い、ピール試験用のサンプルを得た。このサンプルのピール強度及び150℃で250時間と500時間の熱処理を行った後のピール強度を表3に示す。
Comparative Example 2
On the copper foil a, the polyamic acid solution R was uniformly applied so that the thickness after the heat treatment was about 2 μm, and the solvent was removed by heating and drying at 120 ° C. for 1 minute 30 seconds. On top of that, the polyamic acid solution A was uniformly applied so that the thickness after heat treatment was about 25 μm, and the solvent was removed by heating at 120 ° C. for 3 minutes. Thereafter, the temperature was raised stepwise from 130 ° C. to 360 ° C. to perform imidization. About the obtained copper clad laminated board, circuit processing was performed and the sample for a peel test was obtained. Table 3 shows the peel strength of this sample and the peel strength after heat treatment at 150 ° C. for 250 hours and 500 hours.
比較例3
銅箔a上に、熱処理後の厚みが約2μmとなるようポリアミド酸溶液Sを均一に塗布し、120℃で1分30秒加熱乾燥して溶媒を除去した。その上に、熱処理後の厚みが約25μmとなるようポリアミド酸溶液Aを均一に塗布し、120℃で3分間加熱乾燥して溶媒を除去した。その後、130℃から360℃まで段階的に昇温させて、イミド化を行った。得られた銅張積層板について、回路加工を行い、ピール試験用のサンプルを得た。このサンプルのピール強度及び150℃で250時間と500時間の熱処理を行った後のピール強度を表3に示す。
Comparative Example 3
On the copper foil a, the polyamic acid solution S was uniformly applied so that the thickness after the heat treatment was about 2 μm, and the solvent was removed by heating and drying at 120 ° C. for 1 minute and 30 seconds. On top of that, the polyamic acid solution A was uniformly applied so that the thickness after heat treatment was about 25 μm, and the solvent was removed by heating at 120 ° C. for 3 minutes. Thereafter, the temperature was raised stepwise from 130 ° C. to 360 ° C. to perform imidization. About the obtained copper clad laminated board, circuit processing was performed and the sample for a peel test was obtained. Table 3 shows the peel strength of this sample and the peel strength after heat treatment at 150 ° C. for 250 hours and 500 hours.
比較例4
銅箔a上に、熱処理後の厚みが約2μmとなるようポリアミド酸溶液Tを均一に塗布し、120℃で1分30秒加熱乾燥して溶媒を除去した。その上に、熱処理後の厚みが約25μmとなるようポリアミド酸溶液Aを均一に塗布し、120℃で3分間加熱乾燥して溶媒を除去した。その後、130℃から360℃まで段階的に昇温させて、イミド化を行った。得られた銅張積層板について、回路加工を行い、ピール試験用のサンプルを得た。このサンプルのピール強度及び150℃で250時間と500時間の熱処理を行った後のピール強度を表3に示す。
Comparative Example 4
On the copper foil a, the polyamic acid solution T was uniformly applied so that the thickness after the heat treatment was about 2 μm, and the solvent was removed by heating and drying at 120 ° C. for 1 minute 30 seconds. On top of that, the polyamic acid solution A was uniformly applied so that the thickness after heat treatment was about 25 μm, and the solvent was removed by heating at 120 ° C. for 3 minutes. Thereafter, the temperature was raised stepwise from 130 ° C. to 360 ° C. to perform imidization. About the obtained copper clad laminated board, circuit processing was performed and the sample for a peel test was obtained. Table 3 shows the peel strength of this sample and the peel strength after heat treatment at 150 ° C. for 250 hours and 500 hours.
比較例5
銅箔b上に、熱処理後の厚みが約2μmとなるようポリアミド酸溶液Qを均一に塗布し、120℃で1分30秒加熱乾燥して溶媒を除去した。その上に、熱処理後の厚みが約25μmとなるようポリアミド酸溶液Aを均一に塗布し、120℃で3分間加熱乾燥して溶媒を除去した。その後、130℃から360℃まで段階的に昇温させて、イミド化を行った。得られた銅張積層板について、回路加工を行い、ピール試験用のサンプルを得た。このサンプルのピール強度及び150℃で250時間と500時間の熱処理を行った後のピール強度を表3に示す。
Comparative Example 5
On the copper foil b, the polyamic acid solution Q was uniformly applied so that the thickness after the heat treatment was about 2 μm, and the solvent was removed by heating and drying at 120 ° C. for 1 minute 30 seconds. On top of that, the polyamic acid solution A was uniformly applied so that the thickness after heat treatment was about 25 μm, and the solvent was removed by heating at 120 ° C. for 3 minutes. Thereafter, the temperature was raised stepwise from 130 ° C. to 360 ° C. to perform imidization. About the obtained copper clad laminated board, circuit processing was performed and the sample for a peel test was obtained. Table 3 shows the peel strength of this sample and the peel strength after heat treatment at 150 ° C. for 250 hours and 500 hours.
比較例6
銅箔b上に、熱処理後の厚みが約2μmとなるようポリアミド酸溶液Rを均一に塗布し、120℃で1分30秒加熱乾燥して溶媒を除去した。その上に、熱処理後の厚みが約25μmとなるようポリアミド酸溶液Aを均一に塗布し、120℃で3分間加熱乾燥して溶媒を除去した。その後、130℃から360℃まで段階的に昇温させて、イミド化を行った。得られた銅張積層板について、回路加工を行い、ピール試験用のサンプルを得た。このサンプルのピール強度及び150℃で250時間と500時間の熱処理を行った後のピール強度を表3に示す。
Comparative Example 6
On the copper foil b, the polyamic acid solution R was uniformly applied so that the thickness after the heat treatment was about 2 μm, and the solvent was removed by heating and drying at 120 ° C. for 1 minute 30 seconds. On top of that, the polyamic acid solution A was uniformly applied so that the thickness after heat treatment was about 25 μm, and the solvent was removed by heating at 120 ° C. for 3 minutes. Thereafter, the temperature was raised stepwise from 130 ° C. to 360 ° C. to perform imidization. About the obtained copper clad laminated board, circuit processing was performed and the sample for a peel test was obtained. Table 3 shows the peel strength of this sample and the peel strength after heat treatment at 150 ° C. for 250 hours and 500 hours.
比較例7
銅箔b上に、熱処理後の厚みが約2μmとなるようポリアミド酸溶液Tを均一に塗布し、120℃で1分30秒加熱乾燥して溶媒を除去した。その上に、熱処理後の厚みが約25μmとなるようポリアミド酸溶液Aを均一に塗布し、120℃で3分間加熱乾燥して溶媒を除去した。その後、130℃から360℃まで段階的に昇温させて、イミド化を行った。得られた銅張積層板について、回路加工を行い、ピール試験用のサンプルを得た。このサンプルのピール強度及び150℃で250時間と500時間の熱処理を行った後のピール強度を表3に示す。
Comparative Example 7
On the copper foil b, the polyamic acid solution T was uniformly applied so that the thickness after the heat treatment was about 2 μm, and the solvent was removed by heating and drying at 120 ° C. for 1 minute 30 seconds. On top of that, the polyamic acid solution A was uniformly applied so that the thickness after heat treatment was about 25 μm, and the solvent was removed by heating at 120 ° C. for 3 minutes. Thereafter, the temperature was raised stepwise from 130 ° C. to 360 ° C. to perform imidization. About the obtained copper clad laminated board, circuit processing was performed and the sample for a peel test was obtained. Table 3 shows the peel strength of this sample and the peel strength after heat treatment at 150 ° C. for 250 hours and 500 hours.
比較例8
銅箔c上に、熱処理後の厚みが約2μmとなるようポリアミド酸溶液Qを均一に塗布し、120℃で1分30秒加熱乾燥して溶媒を除去した。その上に、熱処理後の厚みが約25μmとなるようポリアミド酸溶液Aを均一に塗布し、120℃で3分間加熱乾燥して溶媒を除去した。その後、130℃から360℃まで段階的に昇温させて、イミド化を行った。得られた銅張積層板について、回路加工を行い、ピール試験用のサンプルを得た。このサンプルのピール強度及び150℃で250時間と500時間の熱処理を行った後のピール強度を表3に示す。
Comparative Example 8
On the copper foil c, the polyamic acid solution Q was uniformly applied so that the thickness after heat treatment was about 2 μm, and the solvent was removed by heating and drying at 120 ° C. for 1 minute 30 seconds. On top of that, the polyamic acid solution A was uniformly applied so that the thickness after heat treatment was about 25 μm, and the solvent was removed by heating at 120 ° C. for 3 minutes. Thereafter, the temperature was raised stepwise from 130 ° C. to 360 ° C. to perform imidization. About the obtained copper clad laminated board, circuit processing was performed and the sample for a peel test was obtained. Table 3 shows the peel strength of this sample and the peel strength after heat treatment at 150 ° C. for 250 hours and 500 hours.
参考例1
厚さ12μmの電解銅箔上に、ポリアミド酸溶液Bを均一に塗布し、120℃で1分30秒間加熱乾燥して溶媒を除去した。この操作を3回繰り返し、熱処理後の厚みが約25μmとなるようにした。その後、130℃から360℃まで段階的に昇温させて、イミド化を行った。得られた銅張積層板について、銅箔をエッチング除去することでポリイミドフィルムを作製し、引裂き伝播抵抗を測定した。その結果を表4に示す。
Reference example 1
Polyamic acid solution B was uniformly applied onto an electrolytic copper foil having a thickness of 12 μm, and the solvent was removed by heating and drying at 120 ° C. for 1 minute and 30 seconds. This operation was repeated three times so that the thickness after the heat treatment was about 25 μm. Thereafter, the temperature was raised stepwise from 130 ° C. to 360 ° C. to perform imidization. About the obtained copper clad laminated board, the polyimide film was produced by carrying out the etching removal of copper foil, and tear propagation resistance was measured. The results are shown in Table 4.
参考例2
ポリアミド酸溶液Cを用いた以外は参考例1と同様にしてポリイミドフィルムを作製し、引裂き伝播抵抗を測定した。その結果を表4に示す。
Reference example 2
A polyimide film was prepared in the same manner as in Reference Example 1 except that the polyamic acid solution C was used, and the tear propagation resistance was measured. The results are shown in Table 4.
参考例3
ポリアミド酸溶液Dを用いた以外は参考例1と同様にしてポリイミドフィルムを作製し、引裂き伝播抵抗を測定した。その結果を表4に示す。
Reference example 3
A polyimide film was prepared in the same manner as in Reference Example 1 except that the polyamic acid solution D was used, and the tear propagation resistance was measured. The results are shown in Table 4.
参考例4
ポリアミド酸溶液Eを用いた以外は参考例1と同様にしてポリイミドフィルムを作製し、引裂き伝播抵抗を測定した。その結果を表4に示す。
Reference example 4
A polyimide film was prepared in the same manner as in Reference Example 1 except that the polyamic acid solution E was used, and the tear propagation resistance was measured. The results are shown in Table 4.
参考例5
ポリアミド酸溶液Hを用いた以外は参考例1と同様にしてポリイミドフィルムを作製し、引裂き伝播抵抗を測定した。その結果を表4に示す。
Reference Example 5
A polyimide film was prepared in the same manner as in Reference Example 1 except that the polyamic acid solution H was used, and the tear propagation resistance was measured. The results are shown in Table 4.
参考例6
ポリアミド酸溶液Mを用いた以外は参考例1と同様にしてポリイミドフィルムを作製し、引裂き伝播抵抗を測定した。その結果を表4に示す。
Reference Example 6
A polyimide film was prepared in the same manner as in Reference Example 1 except that the polyamic acid solution M was used, and the tear propagation resistance was measured. The results are shown in Table 4.
参考例7
ポリアミド酸溶液Qを用いた以外は参考例1と同様にしてポリイミドフィルムを作製し、引裂き伝播抵抗を測定した。その結果を表4に示す。
Reference Example 7
A polyimide film was prepared in the same manner as in Reference Example 1 except that the polyamic acid solution Q was used, and the tear propagation resistance was measured. The results are shown in Table 4.
参考例8
ポリアミド酸溶液Rを用いた以外は参考例1と同様にしてポリイミドフィルムを作製し、引裂き伝播抵抗を測定した。その結果を表4に示す。
Reference Example 8
A polyimide film was prepared in the same manner as in Reference Example 1 except that the polyamic acid solution R was used, and the tear propagation resistance was measured. The results are shown in Table 4.
参考例9
ポリアミド酸溶液Sを用いた以外は参考例1と同様にしてポリイミドフィルムを作製し、引裂き伝播抵抗を測定した。その結果を表4に示す。
Reference Example 9
A polyimide film was prepared in the same manner as in Reference Example 1 except that the polyamic acid solution S was used, and the tear propagation resistance was measured. The results are shown in Table 4.
参考例10
ポリアミド酸溶液Tを用いた以外は参考例1と同様にしてポリイミドフィルムを作製し、引裂き伝播抵抗を測定した。その結果を表4に示す。
Reference Example 10
A polyimide film was prepared in the same manner as in Reference Example 1 except that the polyamic acid solution T was used, and the tear propagation resistance was measured. The results are shown in Table 4.
表4に示したように、本発明で用いられるポリイミド接着層樹脂は、いずれも引裂き伝播抵抗が5kN/m以上と高く、フィルムとしての高い強度を有していることがわかる。 As shown in Table 4, it can be seen that the polyimide adhesive layer resin used in the present invention has a high tear propagation resistance of 5 kN / m or more, and has a high strength as a film.
合成例21
500mlのセパラブルフラスコに、5.937gのTPE−R(20.31mmol)、17.246gのm−TB(81.24mmol)、255gのDMAcを投入し、室温、窒素気流下で撹拌した。完全に溶解した後、21.817gのPMDA(100.02mmol)を添加し、室温で4時間撹拌してポリアミド酸溶液Uを得た。得られたポリアミド酸溶液Uの粘度は37,000cP、重量平均分子量(Mw)は168,000であった。
Synthesis Example 21
A 500-ml separable flask was charged with 5.937 g of TPE-R (20.31 mmol), 17.246 g of m-TB (81.24 mmol), and 255 g of DMAc, and stirred at room temperature under a nitrogen stream. After complete dissolution, 21.817 g of PMDA (100.02 mmol) was added and stirred at room temperature for 4 hours to obtain a polyamic acid solution U. The obtained polyamic acid solution U had a viscosity of 37,000 cP and a weight average molecular weight (Mw) of 168,000.
参考例11
銅箔b上に、熱処理後の厚みが約2μmとなるようポリアミド酸溶液Qを均一に塗布し、120℃で1分30秒加熱乾燥して溶媒を除去した。その上に、熱処理後の厚みが約25μmとなるようポリアミド酸溶液Uを均一に塗布し、120℃で3分間加熱乾燥して溶媒を除去した。その後、130℃から360℃まで段階的に昇温させて、イミド化を行った。得られた銅張積層板について、回路加工を行い、ピール試験用のサンプルを得た。このサンプルのピール強度及び155℃で250時間の熱処理を行った後のピール強度を表5に示す。
Reference Example 11
On the copper foil b, the polyamic acid solution Q was uniformly applied so that the thickness after the heat treatment was about 2 μm, and the solvent was removed by heating and drying at 120 ° C. for 1 minute 30 seconds. On top of that, the polyamic acid solution U was uniformly applied so that the thickness after heat treatment was about 25 μm, and the solvent was removed by heating and drying at 120 ° C. for 3 minutes. Thereafter, the temperature was raised stepwise from 130 ° C. to 360 ° C. to perform imidization. About the obtained copper clad laminated board, circuit processing was performed and the sample for a peel test was obtained. Table 5 shows the peel strength of this sample and the peel strength after heat treatment at 155 ° C. for 250 hours.
参考例12
銅箔b上に、熱処理後の厚みが約2μmとなるようポリアミド酸溶液Qを均一に塗布し、120℃で1分30秒加熱乾燥して溶媒を除去した。その上に、熱処理後の厚みが約25μmとなるようポリアミド酸溶液Aを均一に塗布し、120℃で3分間加熱乾燥して溶媒を除去した。その後、130℃から360℃まで段階的に昇温させて、イミド化を行った。得られた銅張積層板について、回路加工を行い、ピール試験用のサンプルを得た。このサンプルのピール強度及び155℃で250時間の熱処理を行った後のピール強度を表5に示す。
Reference Example 12
On the copper foil b, the polyamic acid solution Q was uniformly applied so that the thickness after heat treatment was about 2 μm, and the solvent was removed by heating at 120 ° C. for 1 minute 30 seconds. On top of that, the polyamic acid solution A was uniformly applied so that the thickness after heat treatment was about 25 μm, and the solvent was removed by heating at 120 ° C. for 3 minutes. Thereafter, the temperature was raised stepwise from 130 ° C. to 360 ° C. to perform imidization. About the obtained copper clad laminated board, circuit processing was performed and the sample for a peel test was obtained. Table 5 shows the peel strength of this sample and the peel strength after heat treatment at 155 ° C. for 250 hours.
参考例13
銅箔b上に、熱処理後の厚みが約2μmとなるようポリアミド酸溶液Cを均一に塗布し、120℃で1分30秒加熱乾燥して溶媒を除去した。その上に、熱処理後の厚みが約25μmとなるようポリアミド酸溶液Aを均一に塗布し、120℃で3分間加熱乾燥して溶媒を除去した。その後、130℃から360℃まで段階的に昇温させて、イミド化を行った。得られた銅張積層板について、回路加工を行い、ピール試験用のサンプルを得た。このサンプルのピール強度及び155℃で250時間の熱処理を行った後のピール強度を表5に示す。
Reference Example 13
On the copper foil b, the polyamic acid solution C was uniformly applied so that the thickness after the heat treatment was about 2 μm, and the solvent was removed by heating and drying at 120 ° C. for 1 minute 30 seconds. On top of that, the polyamic acid solution A was uniformly applied so that the thickness after heat treatment was about 25 μm, and the solvent was removed by heating at 120 ° C. for 3 minutes. Thereafter, the temperature was raised stepwise from 130 ° C. to 360 ° C. to perform imidization. About the obtained copper clad laminated board, circuit processing was performed and the sample for a peel test was obtained. Table 5 shows the peel strength of this sample and the peel strength after heat treatment at 155 ° C. for 250 hours.
表5に示したように、同一の銅箔、接着層樹脂を用いても積層する樹脂により耐熱接着性が異なり、積層樹脂に脂肪族モノマーを含んだ樹脂を用いると耐熱接着性が悪くなることがわかる。これは脂肪族構造を有することにより酸素透過率が高くなったことで酸化劣化が早く起きたものと考えられる。本発明のポリイミド接着層を用いた銅張積層板の長期耐熱性は、積層樹脂に脂肪族モノマーを含んだ樹脂を用いても、高い長期耐熱接着性を示している。 As shown in Table 5, even if the same copper foil and adhesive layer resin are used, the heat resistant adhesive property differs depending on the resin to be laminated, and if the resin containing an aliphatic monomer is used in the laminated resin, the heat resistant adhesive property is deteriorated. I understand. This is thought to be due to the fact that the oxidative deterioration occurred early because the oxygen permeability was increased due to the aliphatic structure. The long-term heat resistance of the copper-clad laminate using the polyimide adhesive layer of the present invention shows high long-term heat resistance even when a resin containing an aliphatic monomer is used for the laminated resin.
以上、本発明の実施の形態を例示の目的で詳細に説明したが、本発明は上記実施の形態に制約されることはなく、種々の変形が可能である。 As mentioned above, although embodiment of this invention was described in detail for the purpose of illustration, this invention is not restrict | limited to the said embodiment, A various deformation | transformation is possible.
Claims (3)
前記ポリイミド絶縁層は、少なくとも1層以上のポリイミド層を含むとともに、下記の構成a及びb;
a)前記銅箔の表面に接する前記ポリイミド層が、テトラカルボン酸無水物成分とジアミン成分とを反応させて得られるポリイミドからなり、
前記ポリイミドが、下記式(1)で表されるポリイミドを20モル%以上含有するとともに、下記式(1)で表されるポリイミド及び式(2)で表されるポリイミドの合計が40モル%以上であること;
b)前記銅箔の前記ポリイミド層と接する面の十点平均粗さ(Rz)が1.0μm以下であり、算術平均粗さ(Ra)が0.2μm以下であること;
を備えている銅張積層板。 A copper clad laminate comprising a polyimide insulating layer and a copper foil laminated on at least one surface of the polyimide insulating layer,
The polyimide insulating layer includes at least one polyimide layer and the following configurations a and b;
a) The polyimide layer in contact with the surface of the copper foil is made of polyimide obtained by reacting a tetracarboxylic anhydride component and a diamine component,
The polyimide contains 20 mol% or more of the polyimide represented by the following formula (1), and the total of the polyimide represented by the following formula (1) and the polyimide represented by the formula (2) is 40 mol% or more. Be
b) The ten-point average roughness (Rz) of the surface in contact with the polyimide layer of the copper foil is 1.0 μm or less, and the arithmetic average roughness (Ra) is 0.2 μm or less;
A copper-clad laminate.
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