TWI804558B - Electrode substrate material for organic device and manufacturing method thereof - Google Patents

Electrode substrate material for organic device and manufacturing method thereof Download PDF

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TWI804558B
TWI804558B TW108100393A TW108100393A TWI804558B TW I804558 B TWI804558 B TW I804558B TW 108100393 A TW108100393 A TW 108100393A TW 108100393 A TW108100393 A TW 108100393A TW I804558 B TWI804558 B TW I804558B
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electrode substrate
substrate material
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TW201937512A (en
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和栗一
田健吾
西尾佳高
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日商東洋鋁股份有限公司
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    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00Electroluminescent light sources
    • H05B33/12Light sources with substantially two-dimensional radiating surfaces
    • H05B33/26Light sources with substantially two-dimensional radiating surfaces characterised by the composition or arrangement of the conductive material used as an electrode
    • HELECTRICITY
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    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00Electroluminescent light sources
    • H05B33/12Light sources with substantially two-dimensional radiating surfaces
    • H05B33/26Light sources with substantially two-dimensional radiating surfaces characterised by the composition or arrangement of the conductive material used as an electrode
    • H05B33/28Light sources with substantially two-dimensional radiating surfaces characterised by the composition or arrangement of the conductive material used as an electrode of translucent electrodes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
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Abstract

本發明主旨在於提供一種有機器件用電極基板材料,係具有由已圖案化之金屬箔構成的導體層101及設在導體層101周圍的平坦化層102。在第一面111上,導體層101的表面從平坦化層102露出,並且導體層101的表面與平坦化層102的表面形成連續的平坦面。 The purpose of the present invention is to provide an electrode substrate material for organic devices, which has a conductor layer 101 made of patterned metal foil and a planarization layer 102 around the conductor layer 101 . On the first surface 111 , the surface of the conductor layer 101 is exposed from the planarization layer 102 , and the surface of the conductor layer 101 and the surface of the planarization layer 102 form a continuous planar surface.

Description

有機器件用電極基板材料及其製造方法 Electrode substrate material for organic device and manufacturing method thereof

本揭示係關係一種有機器件用電極基板材料。 The disclosure relates to an electrode substrate material for an organic device.

近年來,有機電激發光(EL)元件作為下一代照明器具的光源備受矚目。有機EL元件係在陽極與陰極之間具有有機發光層。於有機EL元件中讓電洞與電子在有機發光層中再結合,有機EL元件利用此時產生的能量而發光。此外,鈣鈦礦型及染料敏化型等有機太陽能電池作為下一代太陽能電池裝置備受矚目。有機太陽能電池在陽極與陰極之間具有光電轉換層。於有機太陽能電池中電子及電洞被入射的太陽光激發,有機太陽能電池係從陽極與陰極取出上述電子及電洞而發電。 In recent years, organic electroluminescent (EL) elements have attracted attention as light sources for next-generation lighting fixtures. An organic EL element has an organic light-emitting layer between an anode and a cathode. In the organic EL element, holes and electrons are recombined in the organic light-emitting layer, and the organic EL element uses the energy generated at this time to emit light. In addition, organic solar cells such as perovskite type and dye-sensitized type are attracting attention as next-generation solar cell devices. An organic solar cell has a photoelectric conversion layer between an anode and a cathode. In an organic solar cell, electrons and holes are excited by incident sunlight, and the organic solar cell generates electricity by extracting the electrons and holes from the anode and cathode.

此等裝置需要一種電極基板材料,在該電極基板材料中能夠形成有機發光層及光電轉換層等有機功能層,並且該電極基板材料還能夠取出光或者取入光。 These devices require an electrode substrate material in which organic functional layers such as an organic light-emitting layer and a photoelectric conversion layer can be formed, and which can also take out or take in light.

電極基板材料需要具有平滑性,尤其需要無台階部及突起。其中,該平滑性可保證在形成有機功能層時不產生針孔(pinhole)等。近年來,愈來愈要求有機EL元件及有機太陽能電池大面積化。為了使大面積化之有機EL元件均勻發光,重要者係向整個發光面供電。對於大面積化的有機太陽能電池而言,重要者係高效率地傳輸於裝置內被激發的電子及電洞。因此,要求電極基板材料的表面電阻較低。為了提高生產率而採用捲對捲(Roll-to-Roll)的工藝方式生產有機EL元件及有機太陽能電池。並且,因為要求有機EL元件及有機太陽能電池能夠成型為曲面而使用,所以還要求電極基板材料具有較高的柔性。 The electrode substrate material needs to have smoothness, and especially needs to be free of steps and protrusions. Among them, the smoothness can ensure that pinholes (pinholes) and the like are not generated when the organic functional layer is formed. In recent years, organic EL elements and organic solar cells have been increasingly required to have larger areas. In order to uniformly emit light from a large-area organic EL element, it is important to supply power to the entire light-emitting surface. For large-area organic solar cells, it is important to efficiently transport excited electrons and holes in the device. Therefore, the surface resistance of the electrode substrate material is required to be low. In order to improve productivity, roll-to-roll (Roll-to-Roll) process is used to produce organic EL elements and organic solar cells. Furthermore, since organic EL elements and organic solar cells are required to be molded into curved surfaces for use, electrode substrate materials are also required to have high flexibility.

可滿足此等要求的有機器件用電極基板材料已在開發中。例如,有人探討過在玻璃基板上層疊氧化銦錫(ITO)而形成的有機器件用電極基板材料或在阻氣膜上層疊氧化銦錫(ITO)而形成的有機器件用電極基板材料(例如參照專利文獻1)。 Electrode substrate materials for organic devices that meet these requirements are already under development. For example, electrode substrate materials for organic devices formed by laminating indium tin oxide (ITO) on a glass substrate or electrode substrate materials for organic devices formed by laminating indium tin oxide (ITO) on a gas barrier film (for example, see Patent Document 1).

而且,還有人探討過透過於阻氣膜等上層疊網狀金屬蒸鍍膜而形成的有機器件用電極基板材料(例如參照專利文獻2)。 Furthermore, electrode substrate materials for organic devices formed by laminating a network-shaped vapor-deposited metal film on a gas barrier film or the like have also been studied (for example, refer to Patent Document 2).

[先前技術文獻] [Prior Art Literature] [專利文獻] [Patent Document]

[專利文獻1]日本特開2008-031496號公報 [Patent Document 1] Japanese Patent Laid-Open No. 2008-031496

[專利文獻2]日本特開2001-0110574號公報 [Patent Document 2] Japanese Patent Laid-Open No. 2001-0110574

然而,在玻璃基板上層疊氧化銦錫(ITO)而形成的有機器件用電極基板材料由於無柔性而無法彎曲,從而無法進行捲對捲方式之製造。而且,為了適應塗布工藝而需要進行確保潤濕性的前處理,很費時間。 However, an electrode substrate material for an organic device formed by laminating indium tin oxide (ITO) on a glass substrate cannot be bent due to inflexibility, and cannot be manufactured by a roll-to-roll method. In addition, pretreatment to ensure wettability is required in order to adapt to the coating process, which takes time.

於阻氣膜等上層疊氧化銦錫(ITO)而形成有機器件用電極基板材料,其表面電阻比銀、鋁或銅等金屬的表面電阻高很多。而且,儘管該有機器件用電極基板材料可彎曲,但若減小彎曲的曲率半徑,則ITO層就會發生龜裂,導致表面電阻增大。 The electrode substrate material for organic devices is formed by laminating indium tin oxide (ITO) on a gas barrier film or the like, and its surface resistance is much higher than that of metals such as silver, aluminum, or copper. Furthermore, although this organic device electrode substrate material is bendable, if the radius of curvature of the bend is reduced, cracks will occur in the ITO layer, resulting in an increase in surface resistance.

另一方面,若利用金屬蒸鍍膜在阻氣膜等上形成有機器件用電極基板材料,網狀配線部分就會變成台階部。此外,儘管可彎曲,但若彎曲的曲率半徑較小,金屬蒸鍍膜就會發生龜裂,導致表面電阻增大,因此無法得到足夠的柔性。 On the other hand, if an electrode substrate material for an organic device is formed on a gas barrier film or the like with a metal vapor-deposition film, the mesh wiring portion becomes a stepped portion. In addition, although it can be bent, if the radius of curvature of the bend is small, cracks will occur in the deposited metal film, resulting in an increase in surface resistance, so sufficient flexibility cannot be obtained.

本揭示之目的在於,實現一種平滑性較高、表面電阻較低、 柔性較高的有機器件用電極基板材料。 The purpose of this disclosure is to achieve a smoothness, low surface resistance, Highly flexible electrode substrate material for organic devices.

本揭示之有機器件用電極基板材料的一態樣係具有由已圖案化之金屬箔構成的導體層及設在導體層周圍的平坦化層,在第一面上,導體層的表面從平坦化層露出,並且導體層的表面與平坦化層的表面形成連續的平坦面。 One aspect of the electrode substrate material for organic devices disclosed in this disclosure has a conductor layer made of patterned metal foil and a planarization layer arranged around the conductor layer. On the first surface, the surface of the conductor layer is flattened from layer is exposed, and the surface of the conductor layer forms a continuous planar surface with the surface of the planarization layer.

有機器件用電極基板材料的一態樣可為:導體層具有線寬在20μm以上200μm以下的圖案,導體層於每單位面積之第一面上的密度為15%以下。 An aspect of the electrode substrate material for organic devices can be: the conductor layer has a pattern with a line width of 20 μm to 200 μm, and the density of the conductor layer on the first surface per unit area is 15% or less.

有機器件用電極基板材料的一態樣可為:平坦化層包括阻氣層及透明樹脂層,阻氣層的表面與導體層的露出的表面形成連續的平滑面。 An aspect of the electrode substrate material for an organic device may be that the planarization layer includes a gas barrier layer and a transparent resin layer, and the surface of the gas barrier layer and the exposed surface of the conductor layer form a continuous smooth surface.

有機器件用電極基板材料的一態樣可為:阻氣層包括以鋁及氧為主要成分的層與以矽、氮、氧以及碳中至少一者為主要成分的層中的至少一者,且厚度為20nm以上。 An aspect of the electrode substrate material for an organic device may be: the gas barrier layer includes at least one of a layer mainly composed of aluminum and oxygen and a layer mainly composed of at least one of silicon, nitrogen, oxygen, and carbon, And the thickness is more than 20nm.

有機器件用電極基板材料的一態樣可為:平坦化層對波長400nm~800nm之光的透光率為85%以上。 An aspect of the electrode substrate material for an organic device may be: the light transmittance of the planarization layer to light with a wavelength of 400 nm to 800 nm is more than 85%.

有機器件用電極基板材料的一態樣可為:平坦化層係由聚對苯二甲酸乙二酯(PET)、聚丙烯(PP)、聚乙烯(PE)、聚苯乙烯(PS)、聚碳酸酯(PC)、丙烯酸、聚氯乙烯(PVC)、氟碳樹脂、氧化銦錫(ITO)以及聚乙烯二氧噻吩/聚苯乙烯磺酸(PEDOT/PSS)中的一種或兩種以上形成。 One aspect of the electrode substrate material for organic devices can be: the planarization layer is made of polyethylene terephthalate (PET), polypropylene (PP), polyethylene (PE), polystyrene (PS), poly One or more of carbonate (PC), acrylic acid, polyvinyl chloride (PVC), fluorocarbon resin, indium tin oxide (ITO) and polyethylene dioxythiophene/polystyrene sulfonic acid (PEDOT/PSS) .

有機器件用電極基板材料的一態樣可為:導體層係厚度在6μm以上30μm以下的鋁箔。 One aspect of the electrode substrate material for organic devices may be: an aluminum foil with a conductive layer thickness of 6 μm or more and 30 μm or less.

有機器件用電極基板材料的一態樣可為:導體層包括基板圖 案及設在基板圖案的外側且能夠與外部裝置連接的周邊圖案。 An aspect of the electrode substrate material for organic devices can be: the conductor layer includes a substrate pattern A pattern and a peripheral pattern arranged outside the pattern of the substrate and capable of being connected to an external device.

有機器件用電極基板材料的一態樣可為:在與第一面相反一側的第二面上,導體層的表面從平坦化層露出。或者,在第二面上,導體層的表面被平坦化層覆蓋。 One aspect of the electrode substrate material for an organic device may be: on the second surface opposite to the first surface, the surface of the conductor layer is exposed from the planarization layer. Alternatively, on the second surface, the surface of the conductor layer is covered with a planarization layer.

利用本揭示之有機器件用電極基板材料,可實現較高的平滑性、較低的表面電阻以及較高的柔性。 Using the electrode substrate material for organic devices disclosed in the present disclosure can achieve higher smoothness, lower surface resistance and higher flexibility.

100:有機器件用電極基板材料 100: Electrode substrate materials for organic devices

101:導體層 101: conductor layer

102:平坦化層 102: Planarization layer

103:阻氣層 103: gas barrier layer

104:透明樹脂層 104: transparent resin layer

105:透明支承體 105: transparent support body

106:保護層 106: protective layer

111:第一面 111: The first side

112:第二面 112: The second side

121:基板圖案 121: Substrate pattern

122:周邊圖案 122: Peripheral pattern

122A:第一周邊圖案 122A: the first peripheral pattern

122B:第二周邊圖案 122B: the second peripheral pattern

123:電極 123: electrode

124:端子 124: terminal

200:有機EL元件 200: Organic EL element

201:發光層 201: luminous layer

202:陽極 202: anode

203:陰極 203: Cathode

301:基材 301: Substrate

302:金屬箔 302: metal foil

圖1係顯示用一實施方式之有機器件用電極基板材料製造的有機器件之剖視圖。 FIG. 1 is a cross-sectional view showing an organic device manufactured using an electrode substrate material for an organic device according to an embodiment.

圖2係顯示一實施方式之有機器件用電極基板材料之立體圖。 Fig. 2 is a perspective view showing an electrode substrate material for an organic device according to an embodiment.

圖3係沿圖2中之III-III線剖開之剖視圖。 Fig. 3 is a sectional view taken along line III-III in Fig. 2 .

圖4係顯示導體層的圖案的變形例之俯視圖。 FIG. 4 is a plan view showing a modified example of the pattern of the conductor layer.

圖5係顯示有機器件用電極基板材料的變形例之剖視圖。 Fig. 5 is a cross-sectional view showing a modified example of an electrode substrate material for an organic device.

圖6係顯示有機器件用電極基板材料的變形例之剖視圖。 Fig. 6 is a cross-sectional view showing a modified example of an electrode substrate material for an organic device.

圖7係顯示有機器件用電極基板材料的變形例之剖視圖。 Fig. 7 is a cross-sectional view showing a modified example of an electrode substrate material for an organic device.

圖8係顯示有機器件用電極基板材料的變形例之剖視圖。 Fig. 8 is a cross-sectional view showing a modified example of an electrode substrate material for an organic device.

圖9A係顯示有機器件用電極基板材料的製造方法的一製程之立體圖。 FIG. 9A is a perspective view showing a process of a manufacturing method of an electrode substrate material for an organic device.

圖9B係顯示有機器件用電極基板材料的製造方法的一製程之立體圖。 FIG. 9B is a perspective view showing a manufacturing process of the electrode substrate material for organic devices.

圖9C係顯示有機器件用電極基板材料的製造方法的一製程之立體圖。 FIG. 9C is a perspective view showing a process of a manufacturing method of an electrode substrate material for an organic device.

圖9D係顯示有機器件用電極基板材料的製造方法的一製程之立體圖。 FIG. 9D is a perspective view showing a manufacturing process of the electrode substrate material for organic devices.

圖10A係顯示有機器件用電極基板材料的製造方法的一製程之剖視圖。 FIG. 10A is a cross-sectional view showing a process of a method of manufacturing an electrode substrate material for an organic device.

圖10B係顯示有機器件用電極基板材料的製造方法的一製程之剖視圖。 FIG. 10B is a cross-sectional view showing a process of a manufacturing method of an electrode substrate material for an organic device.

本實施方式的有機器件用電極基板材料係具有導體層101及平坦化層102。如圖1所示般,該有機器件用電極基板材料可做為有機EL元件200的陽極(表電極)202。在有機EL元件200中,發光層201設在陽極202與陰極203之間。在發光層201產生的光會從陽極202側輸出。 The electrode substrate material for an organic device of this embodiment has a conductor layer 101 and a planarization layer 102 . As shown in FIG. 1 , the electrode substrate material for an organic device can be used as an anode (surface electrode) 202 of an organic EL element 200 . In the organic EL element 200 , the light emitting layer 201 is provided between the anode 202 and the cathode 203 . Light generated in the light emitting layer 201 is output from the anode 202 side.

本實施方式中,發光層201意指透過蒸鍍或塗布等在陰極203與陽極202之間形成的所有層,不僅包括有機發光層,還包括電洞注入層、電洞傳輸層、電子注入層、電子傳輸層、電荷禁閉層等。 In this embodiment, the light-emitting layer 201 refers to all layers formed between the cathode 203 and the anode 202 through evaporation or coating, including not only the organic light-emitting layer, but also the hole injection layer, hole transport layer, and electron injection layer. , electron transport layer, charge confinement layer, etc.

如圖2及圖3所示,本實施方式的有機器件用電極基板材料100係具有由已圖案化之金屬箔構成的導體層101及設在導體層101周圍的平坦化層102。在第一面111上,導體層101的表面從平坦化層102露出,並且導體層101的表面與平坦化層102的表面形成連續的平坦面。因此,很容易在第一面上形成有機功能層等。 As shown in FIGS. 2 and 3 , the electrode substrate material 100 for an organic device according to this embodiment has a conductor layer 101 made of patterned metal foil and a planarization layer 102 provided around the conductor layer 101 . On the first surface 111 , the surface of the conductor layer 101 is exposed from the planarization layer 102 , and the surface of the conductor layer 101 and the surface of the planarization layer 102 form a continuous planar surface. Therefore, it is easy to form an organic functional layer and the like on the first face.

本實施方式的有機器件用電極基板材料100的表面係由金屬箔形成的導體層101及平坦化層102構成,無ITO層,因此很容易提高潤濕性。因此,透過塗布法製造有機器件時,還有可縮短UV臭氧清洗等前處理的時間之優點。 The surface of the electrode substrate material 100 for an organic device according to the present embodiment is composed of a conductive layer 101 and a planarization layer 102 formed of a metal foil, and has no ITO layer, so it is easy to improve wettability. Therefore, when manufacturing organic devices by the coating method, there is also the advantage of shortening the pre-treatment time such as UV ozone cleaning.

<導體層> <conductor layer>

本實施方式的導體層101係由已圖案化為規定形狀的金屬箔構成。由金屬箔形成的導體層101與由金屬蒸鍍膜等形成的導體層不同,由金屬箔形成的導體層101即使彎折也不易斷線,因此可實現足夠的柔性。當有機器件用電極基板材料100被用於形成有機器件的陽極202時,導體層101就會與有機EL元件的發光層201接觸,對發光層201施加電壓。 The conductor layer 101 of the present embodiment is composed of a metal foil patterned into a predetermined shape. Conductor layer 101 formed of metal foil is different from a conductor layer formed of a metal vapor-deposited film or the like. Conductor layer 101 formed of metal foil is less likely to be disconnected even when bent, and thus can achieve sufficient flexibility. When the organic device electrode substrate material 100 is used to form the anode 202 of the organic device, the conductive layer 101 is in contact with the light emitting layer 201 of the organic EL element, and a voltage is applied to the light emitting layer 201 .

作導體層101用的金屬箔沒有特別限定,例如可採用鋁箔、銅箔、金箔或銀箔等。其中,較佳為輕量、深處難以發生氧化且光反射性強的鋁箔。 The metal foil used as the conductor layer 101 is not particularly limited, and for example, aluminum foil, copper foil, gold foil, or silver foil can be used. Among them, an aluminum foil that is light in weight, hard to oxidize in depth, and highly reflective in light is preferable.

此外,作導體層101用的金屬箔可為以下金屬薄膜,該金屬薄膜係透過鍍敷或蒸鍍等形成於表面且由鎳、銅、銀、鉑以及金等中的至少一種金屬形成者。 In addition, the metal foil used as the conductor layer 101 may be a metal thin film formed on the surface by plating or vapor deposition, and formed of at least one metal selected from nickel, copper, silver, platinum, and gold.

導體層101的圖案,係可根據有機器件用電極基板材料100所需要具有的特性設計。導體層101的圖案可採用作為有機器件的電極而被採用的公知表電極圖案,例如有格柵狀、網眼狀、螺旋狀、橫紋狀、蜿蜒(Meandering)狀以及其他無定形狀圖案等。 The pattern of the conductive layer 101 can be designed according to the required properties of the electrode substrate material 100 for organic devices. The pattern of the conductor layer 101 can be a well-known surface electrode pattern used as an electrode of an organic device, such as a grid shape, a mesh shape, a spiral shape, a stripe shape, a meandering shape, and other amorphous patterns. wait.

如圖4所示,導體層101的圖案不僅包括構成有機器件的一個電極的基板圖案121,還可包括設在基板圖案121的外側的周邊圖案122。周邊圖案122可包括第一周邊圖案122A及第二周邊圖案122B,第一周邊圖案122A係連接基板圖案121與端子124,第二周邊圖案122B係設在有機器件的與基板圖案121相反一側的面上且連接電極123與端子124。端子124能夠與外部裝置等相連接。此外,亦可不經由端子124,而將周邊圖案122直接與外部裝置等相連接。外部裝置例如可為向有機器件供電的供電部等。 As shown in FIG. 4 , the pattern of the conductor layer 101 includes not only the substrate pattern 121 constituting one electrode of the organic device, but also the peripheral pattern 122 provided outside the substrate pattern 121 . The peripheral pattern 122 may include a first peripheral pattern 122A and a second peripheral pattern 122B. The first peripheral pattern 122A is connected to the substrate pattern 121 and the terminal 124, and the second peripheral pattern 122B is arranged on the opposite side of the organic device from the substrate pattern 121. surface and connect the electrode 123 and the terminal 124 . The terminal 124 can be connected to an external device or the like. In addition, the peripheral pattern 122 may be directly connected to an external device or the like without passing through the terminal 124 . The external device may be, for example, a power supply unit that supplies power to the organic device.

導體層101的厚度沒有特別限定,從確保柔性的觀點及減小表面電阻的觀點來看,較佳為6μm以上。此外,從提高透光率的觀點來看,較佳為30μm以下。 The thickness of the conductive layer 101 is not particularly limited, but is preferably 6 μm or more from the viewpoint of securing flexibility and reducing surface resistance. In addition, from the viewpoint of increasing light transmittance, it is preferably 30 μm or less.

導體層101的線寬沒有特別限定,從減小表面電阻的觀點來看,較佳為20μm以上。從減輕發光不均勻現象的觀點來看,較佳為200μm以下。從確保透光性的觀點來看,導體層於每單位面積之第一面111上的密度較佳為15%以下。 The line width of the conductive layer 101 is not particularly limited, but is preferably 20 μm or more from the viewpoint of reducing surface resistance. From the viewpoint of reducing unevenness in light emission, it is preferably 200 μm or less. From the viewpoint of ensuring light transmission, the density of the conductor layer on the first surface 111 per unit area is preferably 15% or less.

<平坦化層> <planarization layer>

平坦化層102設在導體層101周圍,將已圖案化之導體層101的開口部埋起來。在至少第一面111上,平坦化層102沒有覆蓋導體層101,導體層101的表面露出。 The planarization layer 102 is disposed around the conductor layer 101 to bury the openings of the patterned conductor layer 101 . On at least the first surface 111 , the planarization layer 102 does not cover the conductor layer 101 , and the surface of the conductor layer 101 is exposed.

導體層101的表面與平坦化層102的表面在至少第一面111上形成連續的平坦面。具體而言,導體層101的表面與平坦化層102的表面係構成於其交界部分無台階部的連續面,第一面111整體為平坦面。因為第一面111為此等連續的平坦面,所以可在本實施方式的有機器件用電極基板材料的表面形成均勻的發光層201。又,第一面111只要緊貼著發光層201之相對面即可,導體層101的表面與平坦化層102的表面交界處的高度差較佳為300nm以下。 The surface of the conductor layer 101 and the surface of the planarization layer 102 form a continuous planar surface on at least the first surface 111 . Specifically, the surface of the conductor layer 101 and the surface of the planarization layer 102 are formed as a continuous surface without a step at the boundary portion thereof, and the first surface 111 is a flat surface as a whole. Since the first surface 111 is such a continuous flat surface, a uniform light-emitting layer 201 can be formed on the surface of the electrode substrate material for an organic device according to this embodiment. In addition, the first surface 111 only needs to be in close contact with the opposite surface of the light-emitting layer 201 , and the height difference between the surface of the conductive layer 101 and the surface of the planarization layer 102 is preferably less than 300 nm.

平坦化層102只要目視透明即可,對波長400nm~800nm之光的透光率較佳為85%以上。透過將平坦化層的透光率設在該範圍內,即可提高發光效率。 The planarization layer 102 only needs to be visually transparent, and the light transmittance to light with a wavelength of 400 nm to 800 nm is preferably 85% or more. By setting the light transmittance of the planarization layer within this range, the luminous efficiency can be improved.

只要能使平坦化層102透明,對其組分沒有限定。例如,可用聚對苯二甲酸乙二酯(PET)、聚丙烯(PP)、聚乙烯(PE)、聚苯乙烯(PS)、聚碳酸酯(PC)、丙烯酸、聚氯乙烯(PVC)以及氟碳樹脂等透明樹脂形成平坦化層102。此等樹脂可單獨使用或兩種以上混合使用。此外,亦可採用氧化銦錫(ITO)或聚乙烯二氧噻吩/聚苯乙烯磺酸(PEDOT/PSS)等透明導電材料。 The composition of the planarizing layer 102 is not limited as long as it can make the planarizing layer 102 transparent. For example, polyethylene terephthalate (PET), polypropylene (PP), polyethylene (PE), polystyrene (PS), polycarbonate (PC), acrylic, polyvinyl chloride (PVC) and Transparent resin such as fluorocarbon resin forms the planarization layer 102 . These resins may be used alone or in combination of two or more. In addition, transparent conductive materials such as indium tin oxide (ITO) or polyethylenedioxythiophene/polystyrenesulfonic acid (PEDOT/PSS) can also be used.

平坦化層102可為一層,也可為複數層。透過使平坦化層102為折射率相異的複數層,則可控制光的擴散,減少全反射,提高取光效率。 The planarization layer 102 may be one layer or multiple layers. By making the planarization layer 102 a plurality of layers with different refractive indices, the diffusion of light can be controlled, total reflection can be reduced, and light extraction efficiency can be improved.

如圖3所示,若在與第一面111相反一側的第二面112上導體層101也未被平坦化層102覆蓋,則可獲得供電部位的自由度較大這一優點。然而,如圖5所示,在第二面112上,平坦化層102亦可覆蓋導體層101。 此外,從取光的觀點來看,第二面112較佳為平坦面,但亦可存在凹凸。例如,如圖6所示,與導體層101的圖案對應之凹凸可存在於第二面112。 As shown in FIG. 3 , if the conductor layer 101 is not covered by the planarization layer 102 on the second surface 112 opposite to the first surface 111 , the advantage of a greater degree of freedom of power supply locations can be obtained. However, as shown in FIG. 5 , on the second surface 112 , the planarization layer 102 can also cover the conductive layer 101 . In addition, from the viewpoint of light extraction, the second surface 112 is preferably a flat surface, but unevenness may also exist. For example, as shown in FIG. 6 , unevenness corresponding to the pattern of the conductor layer 101 may exist on the second surface 112 .

若要使導體層101在第二面112上也露出,則平坦化層102的厚度要與導體層101相等。若要使導體層101在第二面112上被平坦化層102覆蓋,則平坦化層102只要比導體層101厚即可。但從柔性的觀點及透光性的觀點來看,較佳為60μm以下。 If the conductor layer 101 is also exposed on the second surface 112 , the thickness of the planarization layer 102 should be equal to that of the conductor layer 101 . In order to cover the conductive layer 101 with the planarization layer 102 on the second surface 112 , the planarization layer 102 only needs to be thicker than the conductive layer 101 . However, from the viewpoint of flexibility and light transmittance, it is preferably 60 μm or less.

如圖7所示,可將透明支承體105貼在第二面112側。貼上透明支承體105,可提高有機器件用電極基板材料100的強度。透明支承體105沒有特別限定,例如可採用聚對苯二甲酸乙二酯(PET)、聚丙烯(PP)、聚乙烯(PE)、聚苯乙烯(PS)、聚碳酸酯(PC)、丙烯酸、聚氯乙烯(PVC)以及玻璃等中之至少一種。透明支承體可為具有防反射功能的層。 As shown in FIG. 7 , the transparent support 105 can be pasted on the second surface 112 side. Attaching the transparent support 105 can increase the strength of the electrode substrate material 100 for organic devices. The transparent support 105 is not particularly limited, for example, polyethylene terephthalate (PET), polypropylene (PP), polyethylene (PE), polystyrene (PS), polycarbonate (PC), acrylic , polyvinyl chloride (PVC) and glass etc. at least one. The transparent support may be a layer having an antireflection function.

此外,如圖8所示,亦可在第二面112側設置黑色保護層106來遮住導體層101。透過在導體層101的背面設置黑色保護層106,從表面側觀察有機器件時,難以看到導體層101的圖案,設計美觀性提高。又,亦可同時設置透明支承體105與保護層106。 In addition, as shown in FIG. 8 , a black protective layer 106 may also be provided on the side of the second surface 112 to cover the conductor layer 101 . By providing the black protective layer 106 on the back surface of the conductive layer 101, the pattern of the conductive layer 101 is difficult to see when the organic device is viewed from the front side, and the design aesthetics are improved. Moreover, the transparent support body 105 and the protective layer 106 may be provided simultaneously.

使於後述蝕刻製程中使用的乾膜光阻為黑色,蝕刻後不將曝光、顯影後留下的乾膜光阻剝離下來,而是直接使用該乾膜光阻,如此即能夠形成保護層106。 Make the dry film photoresist used in the etching process described later to be black, do not peel off the dry film photoresist left after exposure and development after etching, but use the dry film photoresist directly, so that the protective layer 106 can be formed .

由於有機器件用電極基板材料100具有上述結構,所以與先前的有機器件用電極基板材料相比,可使表面電阻較低且柔性較高。此外,亦可提高裝置化後的發光效率。 Since the electrode substrate material 100 for an organic device has the above structure, it can have a lower surface resistance and higher flexibility than conventional electrode substrate materials for an organic device. In addition, the luminous efficiency after device formation can also be improved.

可使平坦化層102包括阻氣層103與透明樹脂層104。有機器件的有機發光層及光電轉換層的抗水蒸氣能力較弱,稍有水蒸氣這些層都會劣化。因此,要由玻璃、金屬或阻氣膜等封住有機發光層及光電轉換層。 然而,有時無法充分阻止電極基板側的水蒸氣。由於電極基板材料具有水蒸氣阻止性,所以水蒸氣難以從電極基板側侵入,可抑制有機功能層劣化。 The planarization layer 102 may include a gas barrier layer 103 and a transparent resin layer 104 . The organic light-emitting layer and photoelectric conversion layer of an organic device have weak resistance to water vapor, and these layers will be degraded by a little water vapor. Therefore, the organic light-emitting layer and the photoelectric conversion layer are sealed with glass, metal, or a gas barrier film. However, water vapor on the electrode substrate side may not be sufficiently prevented in some cases. Since the electrode substrate material has water vapor barrier properties, it is difficult for water vapor to enter from the electrode substrate side, and deterioration of the organic functional layer can be suppressed.

阻氣層103只要透明度較高且具有水蒸氣阻止性即可,可由任意材料形成。例如,可透過原子沉積法形成以鋁及氧為主要成分的層。此外,亦可透過化學氣相沉積(CVD)法形成以矽、氮、氧以及碳為主要成分的層。阻氣層103不限於一層,亦可為由複數層構成的疊層體。從阻止水蒸氣的觀點來看,阻氣層103的厚度較佳為20nm以上。 The gas barrier layer 103 may be formed of any material as long as it has high transparency and water vapor barrier properties. For example, a layer mainly composed of aluminum and oxygen may be formed by atomic deposition. In addition, a layer mainly composed of silicon, nitrogen, oxygen, and carbon may also be formed by chemical vapor deposition (CVD). The gas barrier layer 103 is not limited to one layer, and may be a laminate composed of a plurality of layers. From the viewpoint of preventing water vapor, the thickness of the gas barrier layer 103 is preferably 20 nm or more.

形成阻氣層103時,可使導體層101的表面與阻氣層103的表面形成連續的平坦面。導體層101的表面與阻氣層103的表面交界處的高度差較佳為300nm以下。又,可使透明樹脂層104的厚度比導體層101的厚度薄。 When forming the gas barrier layer 103, the surface of the conductive layer 101 and the surface of the gas barrier layer 103 can form a continuous flat surface. The height difference between the surface of the conductive layer 101 and the surface of the gas barrier layer 103 is preferably less than 300 nm. In addition, the thickness of the transparent resin layer 104 can be made thinner than the thickness of the conductor layer 101 .

<製造方法> <Manufacturing method>

本實施方式的有機器件用電極基板材料100例如可透過以下方式形成。 The electrode substrate material 100 for an organic device of this embodiment can be formed, for example, in the following manner.

首先,如圖9A所示,在表面平滑且具有難以讓樹脂及金屬附著之難附著性基材301上,層疊將成為導體層的金屬箔302。具有難附著性的基材係具有以下性能:即使樹脂及金屬與該基材接觸,也很容易剝離該基材。可使基材本身由具有難附著性的材料形成,亦可在基材表面形成具有難附著性的塗層。例如,基材可採用聚對苯二甲酸乙二酯(PET)、聚丙烯(PP)、聚乙烯(PE)、聚苯乙烯(PS)、聚碳酸酯(PC)、丙烯酸以及聚氯乙烯(PVC)等中的一種或兩種以上。 First, as shown in FIG. 9A , a metal foil 302 to be a conductor layer is laminated on a non-adhesive substrate 301 that has a smooth surface and is difficult for resin and metal to adhere to. A base material having poor adhesion has the property that the base material can be easily peeled off even if resin and metal are in contact with the base material. The substrate itself may be made of a material having low adhesion, or a coating having low adhesion may be formed on the surface of the substrate. For example, substrates can be polyethylene terephthalate (PET), polypropylene (PP), polyethylene (PE), polystyrene (PS), polycarbonate (PC), acrylic, and polyvinyl chloride ( PVC) etc. one or more than two.

金屬箔302採用具有可形成先前所述之導體層101的材質及厚度者。從提高由金屬箔302形成的導體層101與發光層201之間的密著性的觀點來看,較佳係金屬箔302的與基材301貼合之面為平滑面。具體而言,算術平均粗糙度(Ra)較佳在50nm以下。於基材301上層疊金屬箔302時, 亦可在基材301及金屬箔302中至少一者的表面上塗佈具有難附著性或微附著性之黏著劑等。如此而容易進行層疊。 The metal foil 302 has a material and a thickness that can form the aforementioned conductive layer 101 . From the viewpoint of improving the adhesion between the conductive layer 101 formed of the metal foil 302 and the light emitting layer 201 , it is preferable that the surface of the metal foil 302 bonded to the substrate 301 is a smooth surface. Specifically, the arithmetic average roughness (Ra) is preferably 50 nm or less. When laminating the metal foil 302 on the substrate 301, It is also possible to coat the surface of at least one of the substrate 301 and the metal foil 302 with an adhesive or the like having poor adhesion or micro-adhesion. So easy to layer.

其次,如圖9B所示,將層疊在基材301表面的金屬箔302圖案化而形成導體層101。金屬箔302的圖案化例如可透過濕蝕刻或乾蝕刻等公知方法進行。如先前所述,透過蝕刻形成的圖案可採用有機器件的電極常用的已有電極圖案。此外,也可採用具有圖4所示的基板圖案121及周邊圖案122之圖案。 Next, as shown in FIG. 9B , the metal foil 302 laminated on the surface of the substrate 301 is patterned to form the conductor layer 101 . The patterning of the metal foil 302 can be performed by known methods such as wet etching or dry etching, for example. As mentioned above, the pattern formed by etching can adopt the existing electrode pattern commonly used for electrodes of organic devices. In addition, a pattern having the substrate pattern 121 and the peripheral pattern 122 shown in FIG. 4 may also be used.

如圖9C所示,塗佈透明材料而形成平坦化層102。透明材料可採用先前所述之材料。若採用在常溫下具有流動性的材料,則可用例如塗布機進行塗佈。常溫下具有流動性的材料例如可為因溶解於溶劑而具有流動性的樹脂、特定的溫度條件下具有流動性的樹脂、常溫下具有流動性且受光可固化或受熱可固化的樹脂等。 As shown in FIG. 9C , a planarization layer 102 is formed by coating a transparent material. As the transparent material, the aforementioned materials can be used. If a material having fluidity at normal temperature is used, it can be applied, for example, with a coater. The material having fluidity at normal temperature may be, for example, a resin having fluidity by being dissolved in a solvent, a resin having fluidity under specific temperature conditions, a resin having fluidity at normal temperature and curable by light or heat, and the like.

如圖9D所示,剝離基材301。由於使基材具有難附著性,所以很容易剝離基材301。在剝離基材301後形成的第一面上,導體層101未被平坦化層102覆蓋而露出。此外,基材301的表面狀態會轉印到第一面上。透過採用具有平滑表面的基材301,可得到平滑的第一面。 As shown in FIG. 9D , the substrate 301 is peeled off. Since the base material is made difficult to adhere, the base material 301 is easily peeled off. On the first surface formed after peeling off the base material 301 , the conductive layer 101 is exposed without being covered by the planarization layer 102 . In addition, the surface state of the substrate 301 will be transferred to the first surface. By using the substrate 301 with a smooth surface, a smooth first surface can be obtained.

又,亦可在形成平坦化層102之後且剝離基材301之前,設置貼上透明支承體105的製程。透過設置透明支承體105,則即使平坦化層102的厚度較薄,也容易剝離基材301。又,亦可在剝離基材301之後,貼上透明支承體105。 In addition, after the planarization layer 102 is formed and before the substrate 301 is peeled off, a process of attaching the transparent support 105 may also be provided. By providing the transparent support 105, even if the thickness of the planarization layer 102 is thin, the substrate 301 can be easily peeled off. In addition, the transparent support body 105 may be pasted after peeling the base material 301 .

可使平坦化層102包括阻氣層103與透明樹脂層104。於此情形,如圖10A所示,在形成導體層101後之基材301的表面上形成阻氣層103,來覆蓋金屬箔302被去除後的部分及殘留有金屬箔302的部分這兩部分。阻氣層103可由水蒸氣阻止性較高的材料形成。例如使用原子沉積法等,形成以鋁及氧為主要成分的層(例如由Al2O3等形成的層),或使用 化學氣相沉積(CVD)法形成以矽、氮、氧以及碳中至少一者為主要成分的層(例如由SiOx、SiN、SiON或SiONC等形成的層)即可。此外,亦可形成由此等層組合而成的疊層體。如圖10B所示,形成阻氣層103後,在阻氣層103的表面塗佈透明材料而形成透明樹脂層104。圖10B中,係顯示透明樹脂層104將凹部完全填埋起來之例,但凹部亦可未被透明樹脂層104完全填埋起來。此外,亦可使透明樹脂層104完全覆蓋阻氣層103。剝離基材301後,導體層101的表面與阻氣層103的表面連續而成的平坦面亦即第一面會露出。 The planarization layer 102 may include a gas barrier layer 103 and a transparent resin layer 104 . In this case, as shown in FIG. 10A , a gas barrier layer 103 is formed on the surface of the substrate 301 after the conductor layer 101 is formed to cover the portion where the metal foil 302 is removed and the portion where the metal foil 302 remains. . The gas barrier layer 103 may be formed of a material with high water vapor barrier properties. For example, a layer mainly composed of aluminum and oxygen (for example, a layer formed of Al2O3, etc.) is formed by using an atomic deposition method, or using Chemical vapor deposition (CVD) may be used to form a layer mainly composed of at least one of silicon, nitrogen, oxygen, and carbon (for example, a layer formed of SiOx, SiN, SiON, or SiONC). In addition, it is also possible to form a laminated body in which these layers are combined. As shown in FIG. 10B , after the gas barrier layer 103 is formed, a transparent material is coated on the surface of the gas barrier layer 103 to form a transparent resin layer 104 . In FIG. 10B , an example is shown in which the transparent resin layer 104 completely fills the concave portion, but the concave portion may not be completely filled with the transparent resin layer 104 . In addition, the transparent resin layer 104 can also completely cover the gas barrier layer 103 . After the substrate 301 is peeled off, the flat surface formed by the surface of the conductor layer 101 and the surface of the gas barrier layer 103 , that is, the first surface, is exposed.

有機器件用電極基板材料的製造方法不限於此等方法,只要可使第一面為平坦面,亦可透過其他方法形成。 The manufacturing method of the electrode substrate material for organic devices is not limited to these methods, as long as the first surface can be made flat, it can also be formed by other methods.

(實施例) (Example)

以下用實施例進一步詳細說明本揭示之有機器件用電極基板材料。以下實施例僅為示例,並無限定本發明之意圖。 The following examples are used to further describe the electrode substrate material for organic devices disclosed in this disclosure. The following examples are only examples, and are not intended to limit the present invention.

<平滑性之評價> <Evaluation of smoothness>

有機器件用電極基板材料的平滑性評價係依照以下所述進行:用NIKON CORPORATION製造之超高解析度非接觸三維表面形狀計測系統BW-D500以2.2mm×2.2mm之視野觀察表面的凹凸形狀,並測量面內的最大高度Sz。將由JIS-B0601-2001定義的最大高度Rz放在三維空間內計算出的值即為該面內的最大高度Sz,該面內的最大高度Sz可應用於所觀察的整個表面。將平滑性在Sz在200nm以下者判為良好(○),將超過200nm者判為不良(×)。 The evaluation of the smoothness of the electrode substrate material for organic devices is carried out as follows: use the ultra-high resolution non-contact three-dimensional surface shape measurement system BW-D500 manufactured by NIKON CORPORATION to observe the uneven shape of the surface with a field of view of 2.2mm×2.2mm, And measure the maximum height Sz in the plane. The value calculated by placing the maximum height Rz defined by JIS-B0601-2001 in the three-dimensional space is the maximum height Sz in the plane, and the maximum height Sz in the plane can be applied to the entire surface under observation. Those whose smoothness is below 200 nm in Sz were judged as good (◯), and those exceeding 200 nm were judged as poor (×).

<水蒸氣阻止性之評價> <Evaluation of Water Vapor Barrier>

有機器件用電極基板材料的水蒸氣阻止性評價係根據由JIS K 7129-7:2016定義的水蒸氣透過度來進行。將試樣設置在蒸鍍的金屬鈣上,在40℃、90%的環境下經過100小時後,根據已腐蝕的鈣的面積計算水蒸氣透過度。 The water vapor barrier property evaluation of electrode substrate materials for organic devices was performed based on the water vapor permeability defined in JIS K 7129-7:2016. Set the sample on the vapor-deposited metallic calcium, and after 100 hours at 40°C and 90% environment, calculate the water vapor permeability based on the area of the corroded calcium.

<表面電阻之評價> <Evaluation of surface resistance>

有機器件用電極基板材料的表面電阻係用電阻計(SANWA ELECTRIC INSTRUMENT CO.,LTD.製,RD701 DIGITALMULTIMETER)測量50mm×50mm之試樣的對角線上兩端點間的電阻值求出者。將表面電阻在10Ω/cm以下者判為良好(○),將超過10Ω/cm2者判為不良(×)。 The surface resistance of the electrode substrate material for organic devices is obtained by measuring the resistance value between two ends on the diagonal of a 50mm×50mm sample with a resistance meter (manufactured by SANWA ELECTRIC INSTRUMENT CO., LTD., RD701 DIGITALMULTIMETER). Those whose surface resistance was less than 10Ω/cm were judged as good (◯), and those exceeding 10Ω/cm2 were judged as bad (×).

<柔性之評價> <Evaluation of Flexibility>

測量對象試樣在彎曲試驗前後的表面電阻,求出表面電阻的下降率。彎曲試驗係用塗膜彎曲試驗機以10mmφ的心棒進行了50次。將表面電阻的下降率在5%以下者判為柔性良好(○),將超過5%者判為不良(×)。 The surface resistance of the target sample was measured before and after the bending test, and the decrease rate of the surface resistance was obtained. The bending test was performed 50 times with a 10 mmφ mandrel using a coating film bending tester. When the drop rate of the surface resistance was 5% or less, the flexibility was good (◯), and when it exceeded 5%, it was judged as poor (×).

(實施例1) (Example 1)

將難附著性的黏著劑塗佈在3cm×3cm且厚度為15μm(算術平均粗糙度Ra:7nm)的鋁箔(TOYO ALUMINIUM K.K.製,1N30)的一個表面(主面)上,以100℃使其乾燥後,將基材貼在該黏著劑側的塗布面上,在50℃下老化4天。基材係採用厚度為38μm的PET薄膜(Teijin Film Solutions Limited製造)。 Apply a difficult-to-adhesive adhesive to one surface (principal surface) of an aluminum foil (manufactured by TOYO ALUMINUM K.K., 1N30) with a thickness of 3 cm x 3 cm and a thickness of 15 μm (arithmetic mean roughness Ra: 7 nm), and heat it at 100 ° C. After drying, the substrate was attached to the coated surface on the side of the adhesive, and aged at 50° C. for 4 days. As the substrate, a PET film (manufactured by Teijin Film Solutions Limited) having a thickness of 38 μm was used.

將厚度為15μm的鹼性顯影型乾膜光阻貼在鋁箔的背面上,透過紫外線(UV)用網狀光罩曝光、顯影,用氯化鐵(II)水溶液對未殘留有乾膜光阻的部分進行蝕刻,藉此形成導體層。形成導體層的線寬為75μm、間距為1500μm之格柵狀,配線密度為10%。 Paste an alkaline-developing dry film photoresist with a thickness of 15 μm on the back of the aluminum foil, expose and develop it with a mesh mask through ultraviolet (UV), and use an aqueous solution of iron (II) to remove any remaining dry film photoresist. Parts are etched, thereby forming a conductor layer. The conductor layer was formed in a grid shape with a line width of 75 μm and a pitch of 1500 μm, and a wiring density of 10%.

採用電漿CVD法在鋁箔被蝕刻去除後的部分及鋁箔殘留下來的部分這兩部分上形成150nm之SiN膜,之後,透過原子沉積法形成20nm之Al2O3膜,藉此形成阻氣層。 A 150nm SiN film was formed on the etched and remaining part of the aluminum foil by plasma CVD, and then a 20nm Al2O3 film was formed by atomic deposition to form a gas barrier layer.

將對波長400~800nm之光的透光率之平均值為90%的環氧樹脂塗佈在已形成的阻氣層的表面上而形成膜,從黏著劑上形成有阻氣層的面算起之該膜的膜厚達到20μm,該膜將導體層的凹凸埋起來,由該膜形成平 坦化層。將厚度為30μm的市售的防反射膜作為透明支承體貼在平坦化層的表面上,並以100℃使其乾燥。之後,將基材剝離下來而形成有機器件用電極基板材料。 An epoxy resin with an average light transmittance of 90% for light with a wavelength of 400-800nm is coated on the surface of the formed gas barrier layer to form a film, calculated from the surface on which the gas barrier layer is formed on the adhesive The thickness of the film reaches 20 μm, and the film buries the concavity and convexity of the conductor layer. Tanning layer. A commercially available antireflection film having a thickness of 30 μm was pasted on the surface of the planarizing layer as a transparent support, and dried at 100°C. Thereafter, the base material is peeled off to form an electrode substrate material for an organic device.

已得到的有機器件用電極基板材料的平滑性為Rz:127nm,水蒸氣阻止性為10-5g/m2/day以下,表面電阻為0.02Ω/cm2,彎曲試驗前後之表面電阻沒有發生變化。 The smoothness of the obtained electrode substrate material for organic devices is Rz: 127nm, the water vapor barrier property is 10-5g/m2/day or less, and the surface resistance is 0.02Ω/cm2. There is no change in the surface resistance before and after the bending test.

形成了以對象試樣作陽極的有機EL發光元件。元件係透過以下方式形成。首先,讓旋轉塗佈機(MIKASA CO.,LTD製,SpinCoater MS-A150)以3000rpm之轉速旋轉而將聚乙烯二氧塞吩-聚苯乙烯磺酸(PEDOT/PSS,sigma aldrich製)塗佈在對象試樣上,並使其在大氣中乾燥。接著,讓Poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-(4,4′-(N-(4-sec-butylphenyl)diphenylamine)](TFB,sigma aldrich製)溶解於甲苯而形成溶液,以3000rpm之轉速旋轉而塗佈已得到的溶液,並使其在氮氣環境中乾燥。將聚(9,9-二辛基芴-alt-苯并噻二唑)(F8BT,sigma aldrich製)溶解於甲苯而形成溶液,以2000rpm之轉速旋轉而塗佈已得到的溶液。用真空蒸鍍裝置(JEOL Ltd.製造,JEE-4X)在真空下蒸鍍氟化鋰,還在真空下蒸鍍作為陽極的鋁。 An organic EL light-emitting element using the subject sample as an anode was formed. The device is formed in the following manner. First, polyethylene dioxythiophene-polystyrene sulfonic acid (PEDOT/PSS, manufactured by sigma aldrich) was coated with a spin coater (manufactured by MIKASA CO., LTD, SpinCoater MS-A150) at a speed of 3000 rpm. on the subject sample and allowed to dry in the atmosphere. Next, Poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-(4,4′-(N-(4-sec-butylphenyl)diphenylamine)] (TFB, manufactured by sigma aldrich) was dissolved in toluene And form a solution, rotate with the rotating speed of 3000rpm and coat the obtained solution, and make it dry in nitrogen environment.Poly (9,9-dioctylfluorene-alt-benzothiadiazole) (F8BT, sigma Aldrich) was dissolved in toluene to form a solution, and the obtained solution was coated by rotating at a speed of 2000 rpm. Lithium fluoride was evaporated under vacuum with a vacuum evaporation device (JEOL Ltd., JEE-4X). Aluminum was evaporated as the anode.

向已得到的元件施加7V的電壓使其發光,用亮度計(KONICA MINOLTA,INC.製造,色彩亮度計CS-200)測量該發光元件相對於電流及電壓的亮度,求出每1A的亮度作為發光效率,該發光效率為0.9cd/A。 A voltage of 7V was applied to the obtained element to make it emit light, and the luminance of the light-emitting element with respect to current and voltage was measured with a luminance meter (manufactured by KONICA MINOLTA, INC., color luminance meter CS-200), and the luminance per 1A was calculated as Luminous efficiency, the luminous efficiency is 0.9cd/A.

用Sun Energy Corporation製造之UV/O3清洗改性裝置SKB401Y-02,以254nm之波長、10.0mW/cm2之照度以及1分、5分、10分三個水準對有機器件用電極基板材料進行UV臭氧清洗,分別按照由JIS-K-6768-1999定義的潤濕張力試驗法進行評價,1分時的潤濕張力為63mN/m,5分時的潤濕張力為73mN/m,10分時的潤濕張力為73mN/m。 Use the UV/O3 cleaning modification device SKB401Y-02 manufactured by Sun Energy Corporation to conduct UV ozone on the electrode substrate material for organic devices with a wavelength of 254nm, an illumination intensity of 10.0mW/cm2, and three levels of 1, 5, and 10 minutes. Cleaning, respectively, was evaluated according to the wetting tension test method defined by JIS-K-6768-1999. The wetting tension at 1 minute was 63mN/m, the wetting tension at 5 minutes was 73mN/m, and the The wetting tension was 73 mN/m.

(實施例2) (Example 2)

將鋁箔變更為厚度為15μm的銅箔(純度99.96%),將環氧樹脂變更為丙烯酸樹脂,除此以外,其他方面皆與實施例1相同。 The other points were the same as in Example 1 except that the aluminum foil was changed to a 15 μm-thick copper foil (purity: 99.96%), and the epoxy resin was changed to an acrylic resin.

已得到的有機器件用電極基板材料的平滑性為Rz:72nm,水蒸氣阻止性為10-5g/m2/day以下,表面電阻為0.01Ω/cm2,彎曲試驗前後之表面電阻沒有發生變化。 The smoothness of the obtained electrode substrate material for organic devices is Rz: 72nm, the water vapor barrier is 10-5g/m2/day or less, and the surface resistance is 0.01Ω/cm2. There is no change in the surface resistance before and after the bending test.

此外,與實施例1一樣,形成以對象試樣作陽極的有機EL發光元件,測量出發光效率為1.4cd/A。與實施例1一樣,對UV臭氧清洗後的潤濕張力進行評價,1分時的潤濕張力為67mN/m,5分時的潤濕張力為73mN/m,10分時的潤濕張力為73mN/m。 In addition, as in Example 1, an organic EL light-emitting element was formed using the subject sample as an anode, and the luminous efficiency was measured to be 1.4 cd/A. Same as Example 1, the wetting tension after UV ozone cleaning is evaluated, the wetting tension in 1 minute is 67mN/m, the wetting tension in 5 minutes is 73mN/m, and the wetting tension in 10 minutes is 73mN/m.

(實施例3) (Example 3)

除了使導電層的線寬為100μm、間距為2000μm、配線密度為9%以外,其他方面皆與實施例1相同。 Except that the line width of the conductive layer is 100 μm, the pitch is 2000 μm, and the wiring density is 9%, other aspects are the same as in Example 1.

已得到的有機器件用電極基板材料的平滑性為Rz:158nm,水蒸氣阻止性為10-5g/m2/day以下,表面電阻為0.01Ω/cm2,彎曲試驗前後之表面電阻沒有發生變化。 The smoothness of the obtained electrode substrate material for organic devices is Rz: 158nm, the water vapor barrier property is 10-5g/m2/day or less, and the surface resistance is 0.01Ω/cm2. There is no change in the surface resistance before and after the bending test.

此外,與實施例1一樣,形成以對象試樣作陽極的有機EL發光元件,測量出發光效率為1.0cd/A。與實施例1一樣,對UV臭氧清洗後的潤濕張力進行評價,1分時的潤濕張力為63mN/m,5分時的潤濕張力為73mN/m,10分時的潤濕張力為73mN/m。 In addition, in the same manner as in Example 1, an organic EL light-emitting element was formed using the subject sample as an anode, and the luminous efficiency was measured to be 1.0 cd/A. Same as embodiment 1, the wetting tension after UV ozone cleaning is evaluated, the wetting tension in 1 minute is 63mN/m, the wetting tension in 5 minutes is 73mN/m, and the wetting tension in 10 minutes is 73mN/m.

(實施例4) (Example 4)

未形成阻氣層,而是於鋁箔被蝕刻去除後的部分及存在導體層的面上直接填充環氧樹脂,除此以外其他方面皆與實施例1相同,藉此得到有機器件用電極基板材料。 No gas barrier layer was formed, but epoxy resin was directly filled on the etched and removed part of the aluminum foil and the surface where the conductor layer existed. Other aspects were the same as in Example 1, thereby obtaining an electrode substrate material for organic devices. .

已得到的有機器件用電極基板材料的平滑性為Rz:127nm,表面電阻為0.02Ω/cm2,彎曲試驗前後之表面電阻沒有發生變化。水蒸氣阻止性為5.68g/m2/day。 The smoothness of the obtained electrode substrate material for organic devices is Rz: 127nm, the surface resistance is 0.02Ω/cm2, and the surface resistance does not change before and after the bending test. The water vapor barrier property is 5.68g/m2/day.

與實施例1一樣,形成以對象試樣作陽極的有機EL發光元件,測量出發光效率為0.9cd/A。與實施例1一樣,對UV臭氧清洗後的潤濕張力進行評價,1分時的潤濕張力為68mN/m,5分時的潤濕張力為68mN/m,10分時的潤濕張力為73mN/m。 In the same manner as in Example 1, an organic EL light-emitting element was formed using the subject sample as an anode, and the luminous efficiency was measured to be 0.9 cd/A. Same as Example 1, the wetting tension after UV ozone cleaning is evaluated, the wetting tension in 1 minute is 68mN/m, the wetting tension in 5 minutes is 68mN/m, and the wetting tension in 10 minutes is 73mN/m.

(實施例5) (Example 5)

未形成阻氣層,而是於鋁箔被蝕刻去除後的部分及存在導體層的面上直接填充環氧樹脂,透明支承體採用厚度為75μm且水蒸氣透過率為4×10-4g/m2/day的市售的阻氣膜,除此以外其他方面皆與實施例1相同,藉此得到有機器件用電極基板材料。 No gas barrier layer is formed, but epoxy resin is directly filled on the etched and removed part of the aluminum foil and on the surface where the conductor layer exists. Day's commercially available gas barrier film was the same as that of Example 1 except that, thereby obtaining an electrode substrate material for an organic device.

已得到的有機器件用電極基板材料的平滑性為Rz:142nm,表面電阻為0.02Ω/cm2,彎曲試驗前後之表面電阻沒有發生變化。水蒸氣阻止性為3×10-2g/m2/day。 The smoothness of the obtained electrode substrate material for organic devices is Rz: 142nm, the surface resistance is 0.02Ω/cm2, and the surface resistance does not change before and after the bending test. The water vapor barrier is 3×10-2g/m2/day.

與實施例1一樣,形成以對象試樣作陽極的有機EL發光元件,測量出發光效率為0.5cd/A。與實施例1一樣,對UV臭氧清洗後的潤濕張力進行評價,1分時的潤濕張力為66mN/m,5分時的潤濕張力為73mN/m,10分時的潤濕張力為73mN/m。 In the same manner as in Example 1, an organic EL light-emitting element was formed using the subject sample as an anode, and the luminous efficiency was measured to be 0.5 cd/A. Same as Example 1, the wetting tension after UV ozone cleaning is evaluated, the wetting tension in 1 minute is 66mN/m, the wetting tension in 5 minutes is 73mN/m, and the wetting tension in 10 minutes is 73mN/m.

(比較例1) (comparative example 1)

透過濺鍍法在玻璃基板上層疊膜厚為155nm之氧化銦錫(ITO),藉此得到有機器件用電極基板材料。 The electrode substrate material for organic devices is obtained by laminating indium tin oxide (ITO) with a film thickness of 155 nm on a glass substrate by sputtering.

已得到的有機器件用電極基板材料的平滑性為Rz:17nm,水蒸氣阻止性為10-5g/m2/day以下,但表面電阻為0.68Ω/cm2,略微彎折後玻璃 基板便會發生龜裂。 The smoothness of the obtained electrode substrate material for organic devices is Rz: 17nm, the water vapor barrier is 10-5g/m2/day or less, but the surface resistance is 0.68Ω/cm2, and the glass is slightly bent The substrate will crack.

此外,與實施例1一樣,形成以對象試樣作陽極的有機EL發光元件,測量出發光效率為5.2cd/A。與實施例1一樣,對UV臭氧清洗後的潤濕張力進行評價,1分時的潤濕張力為48mN/m,5分時的潤濕張力為61mN/m,10分時的潤濕張力為67mN/m。 In addition, as in Example 1, an organic EL light-emitting element was formed using the subject sample as an anode, and the luminous efficiency was measured to be 5.2 cd/A. Same as Example 1, the wetting tension after UV ozone cleaning is evaluated, the wetting tension in 1 minute is 48mN/m, the wetting tension in 5 minutes is 61mN/m, and the wetting tension in 10 minutes is 67mN/m.

(比較例2) (comparative example 2)

透過濺鍍法在厚度為75μm且水蒸氣透過率為4×10-4g/m2/day的市售阻氣膜上層疊膜厚為120nm之氧化銦錫(ITO),藉此得到有機器件用電極基板材料。 Electrodes for organic devices are obtained by laminating indium tin oxide (ITO) with a film thickness of 120 nm on a commercially available gas barrier film with a thickness of 75 μm and a water vapor transmission rate of 4×10-4 g/m2/day by sputtering Substrate material.

已得到的有機器件用電極基板材料的平滑性為Rz:58nm,水蒸氣阻止性為1×10-4g/m2/day,但表面電阻為9.40Ω/cm2,彎曲試驗後的電阻值急劇增大到2296.00Ω/cm2。 The smoothness of the obtained electrode substrate material for organic devices is Rz: 58nm, and the water vapor barrier property is 1×10-4g/m2/day, but the surface resistance is 9.40Ω/cm2, and the resistance value after the bending test increases rapidly to 2296.00Ω/cm2.

此外,與實施例1一樣,形成了以對象試樣作陽極的有機EL發光元件,但該有機EL發光元件並未發光。與實施例1一樣,對UV臭氧清洗後的潤濕張力進行評價,1分時的潤濕張力為52mN/m,5分時的潤濕張力為58mN/m,10分時的潤濕張力為62mN/m。 In addition, as in Example 1, an organic EL light-emitting element was formed using the subject sample as an anode, but the organic EL light-emitting element did not emit light. Same as Example 1, the wetting tension after UV ozone cleaning is evaluated, the wetting tension in 1 minute is 52mN/m, the wetting tension in 5 minutes is 58mN/m, and the wetting tension in 10 minutes is 62mN/m.

在薄膜上形成的ITO膜的結晶性較差,表面電阻較大。因為係薄膜,所以可彎曲,但以較小的曲率半徑彎折後,ITO膜發生龜裂,電阻增大。此外,為了提高潤濕張力,需要的前處理時間較長。 The crystallinity of the ITO film formed on the thin film is poor, and the surface resistance is large. Because it is a thin film, it can be bent, but when bent with a small radius of curvature, the ITO film cracks and the resistance increases. In addition, in order to increase the wetting tension, the pretreatment time is longer.

(比較例3) (comparative example 3)

在3cm×3cm且厚度為15μm(Ra:7nm)之鋁箔(TOYO ALUMINIUM K.K製造,1N30)的一個表面(主面)上塗佈市售的丙烯酸系黏著劑,將厚度為75μm且水蒸氣透過率為4×10-4g/m2/day的市售的阻氣膜貼在該黏著劑側的塗布面上。 Coat a commercially available acrylic adhesive on one surface (main surface) of an aluminum foil (manufactured by TOYO ALUMINUM K.K., 1N30) with a thickness of 3cm x 3cm and a thickness of 15μm (Ra: 7nm). A commercially available gas barrier film of 4 x 10-4 g/m2/day was attached to the coated surface on the side of the adhesive.

接著,市售的乾膜貼在鋁箔的背面上,在UV條件下用網狀光罩曝光、顯影,用氯化鐵(II)水溶液對未殘留有乾膜的部分進行蝕刻而形成細線,用氫氧化鈉水溶液剝離乾膜,藉此得到有機器件用電極基板材料。 Next, a commercially available dry film is pasted on the back of the aluminum foil, exposed and developed with a mesh mask under UV conditions, and the part where the dry film is not left is etched with an aqueous solution of ferric chloride (II) to form a fine line. An aqueous solution of sodium hydroxide peels off the dry film, thereby obtaining an electrode substrate material for an organic device.

已得到的有機器件用電極基板材料的水蒸氣阻止性為4×10-4g/m2/day,但表面電阻為0.04Ω/cm2,彎曲試驗後的電阻值沒有發生變化,但平滑性為Rz:1621nm。 The water vapor barrier property of the obtained electrode substrate material for organic devices is 4×10-4g/m2/day, but the surface resistance is 0.04Ω/cm2, and the resistance value after the bending test does not change, but the smoothness is Rz: 1621nm.

與實施例1一樣,形成了以對象試樣作陽極的有機EL發光元件,但並未發光。與實施例1一樣,對UV臭氧清洗後的潤濕張力進行評價,1分時的潤濕張力為70mN/m,5分時的潤濕張力為73mN/m,10分時的潤濕張力為73mN/m。 As in Example 1, an organic EL light-emitting element using the subject sample as an anode was formed, but did not emit light. Same as Example 1, the wetting tension after UV ozone cleaning is evaluated, the wetting tension in 1 minute is 70mN/m, the wetting tension in 5 minutes is 73mN/m, and the wetting tension in 10 minutes is 73mN/m.

因為由鋁箔構成導體層,所以表面電阻及柔性等方面沒有問題,但由於未形成平坦化層而產生了台階部,平滑性較差。 Since the conductive layer is made of aluminum foil, there are no problems in terms of surface resistance and flexibility. However, since the planarization layer is not formed, steps are generated, and the smoothness is poor.

(比較例4) (comparative example 4)

在厚度為75μm且水蒸氣透過率為4×10-4g/m2/day的市售阻氣膜上蒸鍍鋁,形成厚度為300nm的蒸鍍鋁膜。將市售乾膜貼在蒸鍍鋁膜的表面上,透過UV用網狀光罩曝光、顯影,用氯化鐵(II)水溶液對未殘留乾膜的部分進行蝕刻,藉此圖案化。之後,用氫氧化鈉水溶液剝離乾膜,藉此得到有機器件用電極基板材料。 Aluminum was evaporated on a commercially available gas barrier film with a thickness of 75 μm and a water vapor transmission rate of 4×10-4 g/m2/day to form an evaporated aluminum film with a thickness of 300 nm. A commercially available dry film was pasted on the surface of the vapor-deposited aluminum film, exposed and developed through UV with a mesh mask, and the part where the dry film did not remain was etched with an aqueous solution of iron (II) to form a pattern. Thereafter, the dry film was peeled off with an aqueous sodium hydroxide solution, whereby an electrode substrate material for an organic device was obtained.

已得到的有機器件用電極基板材料的水蒸氣阻止性為4×10-4g/m2/day,表面電阻為0.42Ω/cm2,但彎曲試驗後的電阻值增大到12.6Ω/cm2,而且平滑性為Rz:343nm。 The water vapor barrier property of the obtained electrode substrate material for organic devices is 4×10-4g/m2/day, and the surface resistance is 0.42Ω/cm2, but the resistance value after the bending test increases to 12.6Ω/cm2, and it is smooth The property is Rz: 343nm.

與實施例1一樣,形成了以對象試樣作陽極的有機EL發光元件,但並未發光。與實施例1一樣,對UV臭氧清洗後的潤濕張力進行評價,1分時的潤濕張力為50mN/m,5分時的潤濕張力為73mN/m,10分時的潤濕張 力為73mN/m。 As in Example 1, an organic EL light-emitting element using the subject sample as an anode was formed, but did not emit light. As in Example 1, the wetting tension after UV ozone cleaning was evaluated. The wetting tension in 1 minute was 50 mN/m, the wetting tension in 5 minutes was 73 mN/m, and the wetting tension in 10 minutes was 73 mN/m. The force is 73mN/m.

因為由蒸鍍鋁膜形成導體層,所以在50次彎曲試驗後導體層上出現龜裂,表面電阻增大。此外,由於導體層而產生台階部,因此平滑性較差。 Since the conductor layer was formed of the vapor-deposited aluminum film, cracks appeared on the conductor layer after 50 bending tests, and the surface resistance increased. In addition, since a step portion is generated due to the conductor layer, smoothness is poor.

表1中一併顯示各實施例及比較例的結果。 Table 1 shows the results of each Example and Comparative Example together.

Figure 108100393-A0305-02-0021-1
Figure 108100393-A0305-02-0021-1

[產業可利用性] [Industrial availability]

本揭示之有機器件用電極基板材料可實現較高的平滑性、阻氣 性、透光率、較低的表面電阻以及較高的柔性,可縮短塗布工藝中的前處理時間,作為有機器件用之電極材料很有用。 The electrode substrate material for organic devices disclosed in this disclosure can achieve high smoothness, gas barrier properties, light transmittance, low surface resistance and high flexibility, can shorten the pretreatment time in the coating process, and is very useful as an electrode material for organic devices.

100:有機器件用電極基板材料 100: Electrode substrate materials for organic devices

101:導體層 101: conductor layer

102:平坦化層 102: Planarization layer

Claims (10)

一種有機器件用電極基板材料,係具有由已圖案化之金屬箔構成的導體層及設在前述導體層周圍的平坦化層;在第一面上,前述導體層的表面從前述平坦化層露出,並且前述導體層的表面與前述平坦化層的表面形成連續的平坦面;在與前述第一面相反一側的第二面上,前述平坦化層具有與前述導體層的圖案對應之凹凸。 An electrode substrate material for organic devices, which has a conductor layer made of patterned metal foil and a planarization layer arranged around the conductor layer; on the first surface, the surface of the conductor layer is exposed from the planarization layer , and the surface of the aforementioned conductor layer forms a continuous flat surface with the surface of the aforementioned planarization layer; on the second surface opposite to the aforementioned first surface, the aforementioned planarization layer has concavities and convexities corresponding to the pattern of the aforementioned conductor layer. 如請求項1所記載之有機器件用電極基板材料,其中前述導體層具有線寬在20μm以上200μm以下的圖案,前述導體層於每單位面積之前述第一面上的密度為15%以下。 The electrode substrate material for organic devices as described in claim 1, wherein the conductive layer has a pattern with a line width of 20 μm to 200 μm, and the density of the conductive layer on the first surface per unit area is 15% or lower. 如請求項1所記載之有機器件用電極基板材料,其中前述平坦化層包括阻氣層及透明樹脂層;前述阻氣層的表面與前述導體層之露出表面形成連續的平滑面。 The electrode substrate material for organic devices as described in claim 1, wherein the planarization layer includes a gas barrier layer and a transparent resin layer; the surface of the gas barrier layer and the exposed surface of the conductor layer form a continuous smooth surface. 如請求項3所記載之有機器件用電極基板材料,其中前述阻氣層包括以鋁及氧為主要成分的層與以矽、氮、氧以及碳中至少一者為主要成分的層中的至少一者,且厚度為20nm以上。 The electrode substrate material for organic devices as described in claim 3, wherein the gas barrier layer includes at least one of a layer mainly composed of aluminum and oxygen and a layer mainly composed of at least one of silicon, nitrogen, oxygen and carbon. One, and the thickness is more than 20nm. 如請求項1所記載之有機器件用電極基板材料,其中前述平坦化層對波長400nm~800nm之光的透光率為85%以上。 The electrode substrate material for organic devices as described in claim 1, wherein the light transmittance of the planarization layer to light with a wavelength of 400nm to 800nm is above 85%. 如請求項5所記載之有機器件用電極基板材料,其中前述平坦化層係由聚對苯二甲酸乙二酯(PET)、聚丙烯(PP)、聚乙烯(PE)、聚苯乙烯(PS)、聚碳酸酯(PC)、丙烯酸、聚氯乙烯(PVC)、氟碳樹脂、氧化銦錫(ITO)以及聚乙烯二氧噻吩/聚苯乙烯磺酸(PEDOT/PSS)中的一種或兩種以上形成。 The electrode substrate material for organic devices as described in claim 5, wherein the planarization layer is made of polyethylene terephthalate (PET), polypropylene (PP), polyethylene (PE), polystyrene (PS ), polycarbonate (PC), acrylic, polyvinyl chloride (PVC), fluorocarbon resin, indium tin oxide (ITO) and polyethylene dioxythiophene/polystyrene sulfonic acid (PEDOT/PSS) or both more than one form. 如請求項1~6中任一項所記載之有機器件用電極基板材料,其中前述導體層包括基板圖案及設在基板圖案之外側且能夠與外 部裝置連接的周邊圖案。 The electrode substrate material for organic devices as described in any one of Claims 1 to 6, wherein the aforementioned conductor layer includes a substrate pattern and is arranged outside the substrate pattern and can be connected to the outside Peripheral patterns for external device connections. 如請求項1~6中任一項所記載之有機器件用電極基板材料,其中前述導體層係厚度在6μm以上至30μm以下的鋁箔。 The electrode substrate material for organic devices as described in any one of Claims 1 to 6, wherein the conductor layer is an aluminum foil with a thickness of not less than 6 μm and not more than 30 μm. 如請求項1~6中任一項所記載之有機器件用電極基板材料,其中在與前述第一面相反一側的第二面上,前述導體層的表面被前述平坦化層覆蓋。 The electrode substrate material for organic devices according to any one of claims 1 to 6, wherein on the second surface opposite to the first surface, the surface of the conductor layer is covered by the planarization layer. 一種有機器件用電極基板材料之製造方法,係用以製造如請求項1~9中任一項所記載之有機器件用電極基板材料,具備:將金屬箔貼合於基材之表面之製程;將貼合於前述基材之前述金屬箔加以圖案化來形成電極圖案之製程;於形成有前述電極圖案之基材之表面塗佈透明材料來形成平坦化層之製程;以及在形成前述平坦化層之製程之後,將前述基材加以剝離之製程;於形成前述平坦化層之製程中,在前述平坦化層形成和導體層之圖案相對應之凹凸。 A method for manufacturing an electrode substrate material for an organic device, which is used to manufacture the electrode substrate material for an organic device as described in any one of Claims 1 to 9, comprising: a process of attaching a metal foil to the surface of the substrate; A process of patterning the aforementioned metal foil bonded to the aforementioned substrate to form an electrode pattern; a process of coating a transparent material on the surface of the substrate on which the aforementioned electrode pattern is formed to form a planarization layer; and forming the aforementioned planarization After the process of layering, the process of peeling off the aforementioned base material; in the process of forming the aforementioned planarization layer, the unevenness corresponding to the pattern of the conductor layer is formed on the aforementioned planarization layer.
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Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012054085A (en) * 2010-09-01 2012-03-15 Konica Minolta Holdings Inc Method of preparing dispersion, transparent conductive film, method of forming transparent conductive film, and organic electroluminescence element
US20120187399A1 (en) * 2009-09-30 2012-07-26 Dai Nippon Printing Co., Ltd. Substrate for flexible device, thin film transistor substrate for flexible device, flexible device, substrate for thin film element, thin film element, thin film transistor, method for manufacturing substrate for thin film element, method for manufacturing thin film element, and method for manufacturing thin film transistor
JP2013501341A (en) * 2009-08-06 2013-01-10 ネーデルランドセ・オルガニサティ・フォール・トゥーヘパスト−ナトゥールウェテンスハッペライク・オンデルズーク・テーエヌオー Photoelectric device and manufacturing method thereof
JP2013501342A (en) * 2009-08-06 2013-01-10 ネーデルランデ オルガニサティー ヴール トゥーヘパストナツールウェテンスハペライク オンデルズーク テーエヌオー Photoelectric device manufacturing method
US20140332148A1 (en) * 2011-06-29 2014-11-13 Debasis Majumdar Article with metal grid composite and methods of preparing
CN104969305A (en) * 2013-02-06 2015-10-07 三菱树脂株式会社 Transparent stacked film, transparent conductive film, and gas barrier stacked film
US20170374737A1 (en) * 2015-07-24 2017-12-28 Lg Chem, Ltd. Method for fabricating flexible substrate

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001110574A (en) 1999-10-06 2001-04-20 Matsushita Electric Ind Co Ltd Electrode for light emitting element
JP2008031496A (en) 2006-07-26 2008-02-14 Idemitsu Kosan Co Ltd Transparent electrode for organic electroluminescence
KR101039543B1 (en) * 2006-09-28 2011-06-09 후지필름 가부시키가이샤 Spontaneous emission display, spontaneous emission display manufacturing method, transparent conductive film, electroluminescence device, solar cell transparent electrode, and electronic paper transparent electrode
WO2010018733A1 (en) * 2008-08-11 2010-02-18 コニカミノルタホールディングス株式会社 Transparent electrode, organic electroluminescent element, and method for producing transparent electrode
JP2010285480A (en) 2009-06-09 2010-12-24 Sony Corp Ultraviolet-curable resin composition, optical film, and display device
TWI644463B (en) * 2012-10-26 2018-12-11 黑拉耶烏斯貴金屬公司 Transparent layers of high conductivity and high efficiency in oleds and process for their rpoduction
JP5949494B2 (en) * 2012-11-26 2016-07-06 コニカミノルタ株式会社 Coating liquid, conductive film manufacturing method and organic electroluminescence element manufacturing method
JP6151158B2 (en) 2012-11-28 2017-06-21 信越化学工業株式会社 Surface modifier for transparent oxide electrode, transparent oxide electrode with surface modification, and method for producing transparent oxide electrode with surface modification
JP2014216175A (en) 2013-04-25 2014-11-17 リンテック株式会社 Method of producing transparent conductive laminate and transparent conductive laminate

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013501341A (en) * 2009-08-06 2013-01-10 ネーデルランドセ・オルガニサティ・フォール・トゥーヘパスト−ナトゥールウェテンスハッペライク・オンデルズーク・テーエヌオー Photoelectric device and manufacturing method thereof
JP2013501342A (en) * 2009-08-06 2013-01-10 ネーデルランデ オルガニサティー ヴール トゥーヘパストナツールウェテンスハペライク オンデルズーク テーエヌオー Photoelectric device manufacturing method
US20120187399A1 (en) * 2009-09-30 2012-07-26 Dai Nippon Printing Co., Ltd. Substrate for flexible device, thin film transistor substrate for flexible device, flexible device, substrate for thin film element, thin film element, thin film transistor, method for manufacturing substrate for thin film element, method for manufacturing thin film element, and method for manufacturing thin film transistor
JP2012054085A (en) * 2010-09-01 2012-03-15 Konica Minolta Holdings Inc Method of preparing dispersion, transparent conductive film, method of forming transparent conductive film, and organic electroluminescence element
US20140332148A1 (en) * 2011-06-29 2014-11-13 Debasis Majumdar Article with metal grid composite and methods of preparing
CN104969305A (en) * 2013-02-06 2015-10-07 三菱树脂株式会社 Transparent stacked film, transparent conductive film, and gas barrier stacked film
US20170374737A1 (en) * 2015-07-24 2017-12-28 Lg Chem, Ltd. Method for fabricating flexible substrate

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