JPWO2011114860A1 - Light emitting device - Google Patents

Abstract

For the purpose of providing a light-emitting device including an OLED element excellent in moisture sealing property and suppressing generation of cracks, at least a transparent anode layer, an organic layer including a light-emitting layer, and a cathode layer are formed on a transparent substrate. In the organic electroluminescent element laminated | stacked in order, the sealing structure by which the said organic electroluminescent element was sealed by the 1st sealing film by the side of the said transparent anode layer and the 2nd sealing film by the side of the said cathode layer The light-emitting device which has the bending elastic modulus of said 2nd sealing film smaller than the bending elastic modulus of said 1st sealing film was found.

Description

  The present invention relates to a light-emitting device, and more particularly to a light-emitting device including an organic electroluminescence element.

  Conventionally, many research and development of display elements using organic electroluminescence elements (hereinafter also referred to as OLED elements) formed on a glass substrate have been reported. In particular, in recent years, OLED white light-emitting materials have been actively developed for OLED elements for light-emitting devices and illumination applications due to the improved performance and life of OLED white light-emitting materials. Furthermore, development of light emitting devices using OLED elements formed on a film substrate is progressing for the purpose of lower cost, mass production, flexibility, and thickness reduction.

  The OLED element has a characteristic that it particularly dislikes impurities such as moisture and oxygen, and there is a problem that the element deteriorates when exposed to a moisture environment and the lifetime is reduced. Therefore, it is necessary to provide a structure that seals the OLED element and prevents the attack of impurities such as moisture and oxygen. In the case of an OLED element formed on a glass substrate, a sealing structure such as aluminum can sealing is used. In this method, a hollow structure is formed by laminating and bonding a cap using a metal such as an aluminum material on a glass substrate using a UV curable resin or the like. This sealing process is performed in an absolutely dry environment in which the amount of moisture and oxygen is controlled, such as in an inert gas environment such as nitrogen or argon, and the inside of the hollow structure becomes an inert gas environment to the OLED element. It has an effect of suppressing attack of impurities such as moisture and oxygen.

On the other hand, in the case of an OLED element using a film substrate, it is easily imagined that it is difficult to employ a hollow sealing structure as described above in order to achieve flexibility. Therefore, as a sealing process, many structures have been proposed in which a transparent thin film barrier structure such as TiO ₂ or SiO ₂ is provided on the OLED element forming surface side of the film substrate and an OLED element and an inorganic sealing thin film are formed on the upper surface. Yes. The inorganic sealing thin film is formed using a material such as SiN and using a thin film forming method such as CVD.

  However, when a film substrate is used, deformation of the substrate easily occurs due to changes in the surrounding environment such as heat and humidity. There is a possibility that the sealing performance cannot be satisfied. In addition, considering the permeation and diffusion of impurities such as moisture and oxygen from the cross section of the film substrate, even if a can sealing structure is adopted, in order to reach a practical level of moisture sealing performance, a further new sealing structure Needed to be added.

  In view of the above situation, several proposals have been made for a sealing structure of an OLED element using a film substrate. For example, there is a technique such as a structure in which an OLED element having a film substrate structure is sandwiched between a first multilayer sealing film having a transparent gas barrier film and a sealant and a second multilayer sealing film having a metal foil and a sealant. It is disclosed (for example, see Patent Document 1).

In this case, the sealing structure is formed by bonding the first and second sealing films and the substrate having the OLED element by vacuum bonding. Generally, the transparent gas barrier film used on the light emitting surface side is formed by forming a transparent inorganic thin film layer such as SiO ₂ or TiO ₂ on a transparent film substrate such as PET or PEN. Using this base material and forming a sandwich structure as described above by vacuum bonding, a step due to the thickness of the substrate is formed in the vicinity of the OLED substrate film in both the first and second sealing films, and bending deformation occurs. Will occur. At this time, in the transparent gas barrier film, which is the first sealing film, bending deformation also occurs in the inorganic thin film layer that functions as a barrier layer, and cracks due to stress concentration occur, which adversely affects the sealing performance. There was a problem of affecting.

JP 2001-237065 A

  This invention is made | formed in view of the said subject, and the objective of this invention is the 1st and 2nd sealing film, and the sealing structure which carries out adhesion | attachment inclusion | attachment by bonding the base material which has an OLED element by bonding. An object of the present invention is to provide a light emitting device including an OLED element including an OLED element using a formed film substrate and including an OLED element excellent in sealing properties of impurities such as moisture and oxygen by suppressing generation of cracks.

  The inventor sets the bending elastic modulus of the second sealing film to be smaller than the bending elastic modulus of the first sealing film (hereinafter also referred to as a transparent barrier film). In the bonding step, the second sealing film (hereinafter may be simply abbreviated as a sealing film) absorbs the level difference generated at the end of the OLED base film included in the two films. Is possible.

  Thereby, it is possible to reduce the level difference generated in the first sealing film having the gas barrier layer, and to suppress the stress concentration and the generation of cracks generated in the gas barrier layer, and to include an OLED element excellent in sealing performance. It has been found that a light emitting device can be provided.

  Further, by setting the bending elastic modulus of the second sealing film to be smaller than the bending elastic modulus of the first sealing film, the deformation amount of the first sealing film is reduced, and the first sealing film (Transparent barrier film) Since the surface can be flattened, the effect of facilitating pasting of a light extraction film that is bonded with the aim of improving light extraction efficiency in the subsequent steps, a color adjustment film for improving appearance, etc. Found that can be obtained.

  Furthermore, the second sealing film preferably has a metal film and an adhesive layer (hereinafter also referred to as a sealant layer), and the first sealing film preferably has a gas barrier layer and an adhesive layer.

  The above object of the present invention can be achieved by the following constitution.

1.
In an organic electroluminescence device in which at least a transparent anode layer, an organic layer including a light emitting layer and a cathode layer are laminated in this order on a transparent substrate, a first sealing film is disposed on the transparent anode layer side, and the cathode A light-emitting device having a sealing structure in which the organic electroluminescence element is sealed by installing a second sealing film on the layer side,
The light emitting device characterized in that the bending elastic modulus of the second sealing film is smaller than the bending elastic modulus of the first sealing film.

2.
The first sealing film has at least a gas barrier layer and an adhesive layer laminated, and the second sealing film has at least a metal film and an adhesive layer laminated. 2. The light emitting device according to 1 above.

3.
3. The light emitting device according to 1 or 2 above, wherein the sealing structure is produced by vacuum bonding.

4).
4. The light emitting device according to claim 1, wherein a film thickness of the second sealing film is smaller than a film thickness of the first sealing film.

5.
5. The light emitting device according to any one of 1 to 4, wherein the second sealing film has a flexural modulus of 50% or less of the flexural modulus of the first sealing film.

6).
6. The light emitting device according to any one of 1 to 5, wherein a sealing layer made of an inorganic film of SiN is provided on a surface of the cathode layer opposite to the organic layer side.

7).
6. The light emitting device according to any one of 1 to 5, wherein a sealing layer made of a thermosetting resin is provided on a surface of the cathode layer opposite to the organic layer.

8).
8. The light emitting device according to any one of 2 to 7, wherein the metal film included in the second sealing film is aluminum.

  According to the present invention, the OLED element using the film substrate on which the moisture sealing structure is formed by bonding and encapsulating the film substrate having the OLED element by bonding with the first and second sealing films is included. In the light emitting device, it is possible to provide a light emitting device including an OLED element that suppresses the generation of cracks and is excellent in sealing properties of impurities such as moisture and oxygen.

FIG. 1 a is a cross-sectional view illustrating an example of a light-emitting device of the present invention. FIG. 1 b is a cross-sectional view showing an inorganic sealing layer and a thermosetting resin sealing layer that can be provided after the cathode layer is formed. Sectional drawing which shows the structure of a light-emitting device. FIG. 3A is a cross-sectional view showing a configuration of a transparent barrier film (first sealing film). FIG. 3B is a cross-sectional view showing a configuration of a sealing film (second sealing film). FIG. 4A is a cross-sectional view showing when the vacuum chamber is opened. FIG. 4B is a cross-sectional view showing the vacuum chamber sealed and when the diaphragm is pressurized. Sectional drawing which shows the level | step difference which absorbs the level | step difference of the light emitting device included also with a transparent barrier film (1st sealing film), a level | step difference shape generate | occur | produces, and stress concentration generate | occur | produces.

  Hereinafter, although the form for implementing this invention is demonstrated, this invention is not limited to these.

The light emitting device of the present invention is
In an organic electroluminescence device in which at least a transparent anode layer, an organic layer including a light emitting layer and a cathode layer are laminated in this order on a transparent substrate, a first sealing film is disposed on the transparent anode layer side, and the cathode A light-emitting device having a sealing structure in which the organic electroluminescence element is sealed by installing a second sealing film on the layer side,
A bending elastic modulus of the second sealing film is smaller than a bending elastic modulus of the first sealing film.

  In the present invention, since the bending elastic modulus of the second sealing film is smaller than the bending elastic modulus of the first sealing film, generation of cracks is suppressed and impurities such as moisture and oxygen are sealed. Thus, a light-emitting device including an OLED element, which is excellent in property and excellent in flattening of a film substrate and can be easily bonded to a light extraction film or a color adjustment film in a later step, is obtained.

Hereinafter, the present invention, its components, and modes and modes for carrying out the present invention will be described in detail.
<Configuration of light emitting device>
FIG. 1a is a cross-sectional view showing an example of a light emitting device of the present invention.

  As shown in detail in FIG. 1 a, the light emitting device 101 of the present invention includes a transparent substrate 102, a transparent anode layer 103, an organic layer 104, a cathode layer 105, an extraction electrode portion 106, a transparent barrier film (first sealing Film) 107 and sealing film (second sealing film) 108. An arrow 112 indicates the direction in which the emitted light travels.

  The transparent base material 102 is comprised from transparent films, such as PEN and PET. On the surface on which the organic layer is formed, a hard coat layer is formed for the purpose of oligomer precipitation from the base material, surface flattening, and surface flaw suppression. The hard coat layer is generally formed in a thin film on the transparent substrate 102 by mixing an inorganic filler or particles in an acrylic resin, and applying and curing.

  The transparent anode layer 103 is generally made of ITO, which is a composite oxide of indium and tin. ITO is formed on the transparent substrate 102 using a thin film forming method such as sputtering. ITO is in an amorphous state when a thin film is formed, and is generally crystallized through a baking step after film formation. By performing this crystallization step, it is possible to significantly reduce the electrical resistance value of ITO. After the ITO film is formed, a photoresist is patterned on the ITO through a photolithography process, and the ITO transparent anode layer is patterned into a predetermined shape using a wet etching method or the like.

  As shown in detail in FIG. 2, the organic layer 104 is mainly composed of a hole transport layer 201, a light emitting layer 202, and an electron transport layer 203, each of which includes a vacuum deposition method, a spin coating method, a coating method, and an ink jet method. Each layer is formed in a predetermined thickness by applying a film forming method such as a method. The material of the light emitting layer 202 may be a polymer organic electroluminescent light emitting material or a low molecular organic electroluminescent light emitting material, but both block impurities such as moisture and oxygen until the sealing process is completed. Therefore, the process is performed in an environment purged with pure nitrogen, argon, or dry air.

  The hole transport layer 201 is made of a hole transport material having a function of transporting holes. The hole transport layer can be provided as a single layer or a plurality of layers. The hole transport material has any one of hole injection or transport and electron barrier properties, and may be either organic or inorganic. Examples of compounds that can be used as the hole transport layer include triazole derivatives, oxadiazole derivatives, imidazole derivatives, polyarylalkane derivatives, pyrazoline derivatives and pyrazolone derivatives, phenylenediamine derivatives, arylamine derivatives, and the like.

  With respect to the light emitting layer 202, (a) a charge injection function, that is, a function that can inject holes from the anode or the hole injection layer when an electric field is applied, and can inject electrons from the cathode or the electron injection layer, (B) Provides a transport function, ie, a function of moving injected holes and electrons by the force of an electric field, and (c) provides a light emission function, ie, a field for recombination of electrons and holes. There is no particular limitation as long as it has the three functions of connecting. As the material of the light emitting layer 202, a polymer organic electroluminescent light emitting material, a low molecular organic electroluminescent light emitting material can be used, for example, a fluorescent whitening agent such as benzothiazole, benzimidazole, benzoxazole, A styrylbenzene compound can be used. Since the light emitting layer 202 needs to be operated in an absolutely dry environment in which moisture is blocked from the film forming process to the sealing process, the process is performed in an environment purged with pure nitrogen, argon, or dry air. Is done.

  The electron transport layer 203 only needs to have a function of transmitting electrons injected from the cathode to the light emitting layer, and any material can be selected from conventionally known compounds. . Examples of compounds that can be used as the electron transport layer include nitro-substituted fluorene derivatives, diphenylquinone derivatives, thiopyran dioxide derivatives, carbodiimides, fluorenylidenemethane derivatives, anthraquinodimethane and anthrone derivatives, oxadiazole derivatives, and the like. It is done.

  The cathode layer 105 is generally formed by depositing a metal film such as Al or an Ag / Mg alloy. Further, between the cathode layer 105 and the electron transport layer 203, an alkali metal film, a metal oxide thin film, or the like may be formed to a thickness of 1 nm to 50 nm as a buffer layer for improving electron injection efficiency. .

After the cathode layer 105 is formed, an inorganic sealing layer 110 made of an inorganic film such as SiN or a resin sealing layer 110 such as a thermosetting resin may be provided on the cathode layer 105 in order to improve sealing performance. Yes (see FIG. 1b). The thickness of the resin sealing layer such as the inorganic sealing layer or the thermosetting resin is preferably 0.5 μm to 50 μm, and more preferably 1 μm to 20 μm. Within this range, a preferable sealing effect can be obtained. As the inorganic sealing layer, SiO ₂ or SiN is preferably used, and as the resin sealing layer, a thermosetting epoxy resin is preferably used.

  For the extraction electrode portion 106, a flexible substrate such as an FPC or a thin material plate having excellent conductivity such as Al or Cu is generally used. Examples of the connection between the transparent anode layer 103 and the cathode layer 105 and the extraction electrode unit 106 include a pressure bonding method and a connection by an ACF (Anisotropic Conductive Film).

  The first sealing film of the present invention is preferably composed of at least a transparent resin film, a gas barrier layer, and an adhesive layer (sealant layer).

About the transparent barrier film 107 as a 1st sealing film of this invention, an inorganic substance is included as the gas barrier layer 303 on transparent resin films 301 (it may have the hard-coat layer 302), such as PET and PEN. It is preferable to have a thin film gas barrier layer. Examples of the material for the thin film gas barrier layer include SiO ₂ , TiO ₂ , and SiN. A transparent gas barrier layer is formed from the above materials using a film forming method such as a vacuum deposition method, a sputtering method, a plasma CVD method, an atmospheric pressure plasma method, etc., and an adhesive layer is formed on the transparent gas barrier layer as a thermoplastic. By providing an adhesive layer (sealant layer) 304 such as a resin, the transparent barrier film 107 is formed (see FIG. 3a). The adhesive layer is formed by a coating method. As the coating method, methods such as a roll coating method, a spin coating method, a screen printing method, and an ink jet method can be used.

  The thickness of the transparent resin film 301 is preferably 10 μm to 500 μm, and the thickness of the hard coat layer 302 is preferably 1 μm to 20 μm. The thickness of the gas barrier layer is preferably 0.1 μm to 5 μm. As a material for the adhesive layer (sealant layer) 304, a thermosetting epoxy resin or polyethylene is preferably used.

  The first sealing film has transparency that transmits light emitted from the light emitting layer, and transmits light of 380 to 800 nm as transparency, and the total light transmittance is preferably 60% or more, and 70% or more. Is more preferable, and 80% or more is particularly preferable. The total light transmittance can be measured according to a known method using a spectrophotometer or the like.

  The sealing film 108 as the second sealing film of the present invention preferably has a metal thin film layer such as an Al foil as the metal film 305 on the transparent resin film 301 such as PEN or PET, Have an adhesive layer (sealant layer) 304 such as a thermoplastic resin as an adhesive layer (see FIG. 3b). The metal film is formed by a method of laminating a metal film such as an aluminum foil on a transparent resin film, and the adhesive layer is formed by a coating method or the like in the same manner as the first sealing film.

  The thickness of the transparent resin film is preferably 5 μm to 200 μm, and the metal thin film 305 is preferably 5 μm to 50 μm. The sealant layer is preferably 1 μm to 100 μm. As the sealant layer, like the first sealing film, a thermosetting epoxy resin or polyethylene is preferably used.

  In the present invention, the bending elastic modulus of the second sealing film (sealing film 108) is smaller than the bending elastic modulus of the first sealing film (transparent barrier film 107).

  In the present invention, in order to make the bending elastic modulus of the second sealing film (sealing film 108) smaller than the bending elastic modulus of the first sealing film (transparent barrier film 107), in particular, the sealing film By selecting a material having a smaller bending elastic modulus such as PE (polyethylene) as the main constituent material 108, the bending elastic modulus can be lowered. Specifically, the bending elastic modulus of the sealing film 108 is preferably 50% or less of the bending elastic modulus of the transparent barrier film 107. It is preferably 50% or less and 10% or more, and more preferably 40% or less and 20% or more. Alternatively, the above object can also be achieved by making the sealing film 108 thinner than the transparent barrier film 107. The thickness of the sealing film 108 is preferably 50 μm to 300 μm, and is preferably such that the flexural modulus is 50% or less of the transparent barrier film 107.

The flexural modulus of the present invention is determined by using an Instron 5582 type bending tester for the film sample, and measuring the film according to the method described in ISO 178 in accordance with the method described in ISO 178. The bending elastic modulus (unit: MPa) can be measured.
<Manufacturing process of light emitting device>
Specifically, the light emitting device 101 of the present invention is manufactured by the following steps.

  A transparent anode 102, an organic layer 104, and a cathode layer 105 are formed on a transparent substrate 102 in a completely dry environment to be capable of emitting light. More specifically, an OLED element is used as the light emitting device. As a manufacturing method of the OLED element 109, a transparent anode layer is provided on a transparent substrate such as PEN, and a hole transport layer 201 and a light emitting layer 202 are sequentially provided thereon by a coating method. Further, it is manufactured by providing the cathode transport layer 203 on the electron transport layer 203 thereon.

  In the case where an inorganic sealing layer such as SiN is provided on the cathode layer 105, a film forming method such as CVD is used. Moreover, when providing resin sealing layers, such as a thermosetting resin, it forms on the cathode layer 105 by roll bonding or vacuum bonding.

  On the other hand, the extraction electrode portion 106, the transparent barrier film 107, and the sealing film 108 come into contact with the OLED element 109 during the manufacturing process and adversely affect the OLED characteristics. Therefore, it is necessary to remove moisture as a pretreatment. is there. Each of them is performed at a predetermined temperature to remove as much moisture as possible by holding it in a clean oven, a vacuum oven, or an absolutely dry environment.

  In order to remove moisture to a level that does not affect the OLED characteristics, it is desirable to perform drying at the highest possible temperature within a range not exceeding the glass transition point Tg of the material. Specifically, it is desirable to perform the drying until the water concentration falls within the range of 1 ppm to 100 ppm.

  Through the above drying process, the OLED element 109 is disposed on the transparent barrier film 107 at a predetermined position. In order to temporarily determine the arrangement position of the OLED element 109, the sealant layer on the transparent barrier film 107 is softened by applying a predetermined temperature to a part after the OLED element 109 is arranged on the transparent barrier film 107. By curing again, the arrangement position of the OLED element 109 is provisionally determined. The provisional temperature is preferably a little lower than the softening point of the sealant layer, specifically about 5 ° C.

  Thereafter, the extraction electrode unit 106 is connected to a part of the transparent anode layer 103 which is a current feeding unit and a part of the cathode layer 105 which is a current receiving unit by a predetermined method. In particular, when ACF is used as a connection method, a temporary sticking step based on the temporary bonding temperature of the ACF and a crimping step for crushing metal particles having a role of actually making electrical connection in the ACF are performed, and the extraction electrode unit 106 is connected. Is done.

  After passing through the above steps, the sealing film 108 is temporarily laminated on the OLED element 109 temporarily arranged on the transparent barrier film 107. The temporary lamination can be performed by heating a part of the sealing film 108 and softening the sealant layer.

  The transparent barrier film 107 and the sealing film 108 may be temporarily laminated using a roll-to-roll process in a roll state, or may be temporarily laminated after being cut into a predetermined size.

  Thereafter, the film in the state of being temporarily laminated is accurately cut into a predetermined size, and the light emitting device 101 is manufactured by vacuum bonding or roll bonding. In particular, as the total thickness of the OLED element 109 increases, it is preferable to manufacture by vacuum bonding in order to obtain good bonding properties.

  Although there exist methods, such as a parallel plate crimping method and a diaphragm method, in a vacuum bonding method, the case where a diaphragm method is employ | adopted is described here.

  In the diaphragm method, as shown in FIG. 4, the inside 407 of a diaphragm 405 such as a silicon rubber thin film is made positive pressure in a vacuum chamber composed of an upper chamber 404 and a lower chamber 401, and bonding is performed while the diaphragm 405 is inflated. The pressure is gradually applied from the center of the material 403, and bonding is performed on the principle of expelling bubbles remaining in the interior 406. In particular, the above steps are generally performed while heating the receiving table to a predetermined temperature that softens the sealant layer. The receiving table is formed by subjecting a SUS material to a surface treatment such as plating.

  In the case of the diaphragm method, since a metal material is generally used for the table on the receiving side, the internal step is transferred to the pressure side = diaphragm side. As the thickness of the material contained in the two sealing films increases, in order to absorb this internal material thickness, the rubber hardness of the diaphragm is lowered, or the bending elastic modulus of either sealing film is lowered, It is necessary to increase the allowable stress value for bending deformation.

  Based on the above, the light emitting device 101 of the present invention has the sealing film 108 on the diaphragm side and the transparent barrier film 107 on the table side, and the bending elastic modulus of the sealing film 108 is smaller than that of the transparent barrier film 107. By setting, the thickness difference of the OLED element 109 included in the two films is absorbed on the sealing film 108 side, and the transparent barrier film 107 is manufactured so as not to cause bending deformation (see FIG. 5). ). Reference numeral 111 in FIG. 5 denotes a portion where the step of the light-emitting device contained is absorbed by the transparent barrier film, and the step shape is generated and stress concentration occurs.

  In the present invention, by adopting the above-described configuration, not only can the generation of cracks be suppressed and a light emitting device excellent in moisture sealing property can be provided, but also the light in the subsequent process can be excellent in flattening the transparent barrier film surface. It is possible to provide a light emitting device including an OLED element that can be easily pasted such as a take-out film or a color adjustment film.

  From the above, the construction technology of the first sealing film and the second sealing film constituting the present invention has been described for the OLED element, but this technique of the present invention is not limited to the OLED element, but the organic thin film solar. It can be widely applied to batteries or electrophoretic elements.

  Although the present invention has been described in detail with reference to specific embodiments, the scope of the present invention should not be limited by the above-described embodiments, but the scope of the description of the claims and the equivalents thereof. It will be apparent to those skilled in the art that various modifications are possible.

  EXAMPLES Hereinafter, although an Example is given and this invention is demonstrated in detail, this invention is not limited to these.

(Preparation of transparent barrier film 107-1)
As the transparent barrier film 107-1, a substrate in which a CHC layer (clear hard coat layer) using an acrylic resin is applied on both sides of a PET film having a thickness of 125 μm with a thickness of 5 μm is used. A plurality of gas barrier layers containing a SiO ₂ inorganic material were formed to have a thickness of 0.5 μm. Further, a water-soluble polyethylene was applied as a sealant layer (adhesive layer) with a thickness of 10 μm by a coating method to produce a transparent barrier film 107-1.

(Preparation of sealing film 108-1)
Further, as the sealing film 108-1, a sealant layer (adhesive layer) having a thickness of 20 μm using a thermoplastic resin (a thermoplastic resin mainly composed of polyethylene), an Al foil layer having a thickness of 30 μm as a metal film, and a thickness of 25 μm. A sealing film 108-1 in which a PET layer was laminated was prepared.

(Preparation of transparent barrier film 107-2)
A transparent barrier film 107-2 was produced by changing the film structure in the production of the transparent barrier film 107-1 as shown in Table 1.

(Preparation of sealing films 108-2 to 108-6)
The structure of the film in preparation of the above-mentioned sealing film 108-1 was changed as shown in Table 2, and sealing films 108-2 to 108-6 were prepared.

(Preparation of OLED element)
As a transparent substrate, an acrylic clear hard coat layer is applied on both sides of a polyethylene terephthalate film (PET film) having a thickness of 180 μm, dried and then UV-cured, and then made of silicon oxide by atmospheric pressure plasma CVD. A PET film on which a transparent gas barrier layer having a total film thickness of 900 nm is formed, and a transparent positive electrode, a hole transport layer, a light-emitting layer, an electron transport layer, and a cathode layer are laminated in this order on the transparent substrate. 109 was produced.

Example 1 (Production of light-emitting device 1)
The OLED element 109 is temporarily positioned at a predetermined position of the sealant layer of the transparent barrier film 107-1 produced as described above, and further, the sealant layer of the sealing film 108-1 is on the OLED element 109 side. In this way, the light emitting device 1 of the present invention including the OLED element 109 was manufactured by temporarily fixing and vacuum bonding. The heat sealing for the temporary positioning was performed at a portion other than the light emitting portion of the OLED element 109.

Examples 2 to 6 (production of light emitting devices 2 to 6)
(Production of light emitting devices 2 to 6)
In the same manner as the light-emitting device 1 in Example 1, light-emitting devices 2 to 6 were manufactured using the transparent barrier films 107-1 and 107-2 and the sealing films 108-1 to 108-4.

  Here, in the light-emitting device 5 of Example 5, a 5 μm SiN layer is provided as the inorganic sealing layer 110 between the sealing film 108 and the OLED element 109 by the CVD method, and the light-emitting device 6 of Example 6 is the same. A 10 μm thermosetting epoxy resin layer was provided as a resin sealing layer 110 by a coating method.

Comparative examples 1 and 2 (production of light-emitting devices 7 and 8)
Using the transparent barrier film 107-1 and the sealing films 108-5 and 6 produced as described above, light-emitting devices 7 and 8 were produced and used for comparison.

<Evaluation>
(Evaluation of flexural modulus)
For the sealing films 108-1 to 108-6 and the transparent barrier films 107-1 and 107-2 produced as described above, the flexural modulus was measured using an Instron 5582 type bending tester. It was measured. About the measuring method, according to the system as described in ISO 178, the film was cut into strips, a three-point bending test was performed, the bending elastic modulus (unit: MPa) was measured, and the A value was determined by the following formula. The results are shown in Table 3.
(Bending elastic modulus of sealing film) / (Bending elastic modulus of transparent barrier film) = A value Note that this A value is the ratio of the respective bending elastic modulus of the sealing film 108 to the bending elastic modulus of the transparent barrier film 107. It is shown that the A value is smaller than 1, the bending elastic modulus of the sealing film 108 (second sealing film) is small with respect to the transparent barrier film 107 (first sealing film), and it is easy to bend. Show.

(Sealability evaluation)
About this light-emitting device 1-10, the acceleration test regarding a sealing performance was done in the state which applied wet heat (60 degreeC, RH90%, 500 hours). The dark spot was evaluated about the light-emitting device left to stand under the said environment for 500 hours. For the dark spot (DS), +5 V was applied by a low voltage power supply (DC voltage / current source R6243 manufactured by ADC Co., Ltd.) to cause the light emitting device to emit light, and the light emission state at that time was observed with a microscope. The number of occurrences of dark spots having a diameter of 30 μm or more (where they were observed as black spots without emitting light) in a range of 10 mm × 10 mm was counted.

(Criteria)
◎: 0 pieces ○: 1 piece or more and less than 10 pieces △: 10 pieces or more and less than 20 pieces ×: 20 pieces or more As a result of the sealing test, the number of dark spots (DS) generated is A value as shown in Table 3. It turned out that there was a difference. In particular, in the light-emitting devices (light-emitting devices 1 to 6) of the present invention having an A value of less than 1.0, the sealing performance was excellent, and no dark spots at the time of light emission were observed, and the predetermined performance was satisfied. On the other hand, in the comparative light-emitting devices (light-emitting devices 7 and 8) having an A value of 1.0 or more, dark spots at the time of light emission due to moisture or the like from cracks generated in the stepped portion 111 of the OLED element 109 are generated. Growth was seen.

Comparative Example 3 (Production of light-emitting device 9)
As the transparent barrier film 107-3, a polypropylene acid-modified resin as a sealant layer was laminated to a thickness of 50 μm on 12 μm PET coated with 5 μm polyvinylidene chloride to prepare a transparent barrier film 107-3. Next, as a sealing film 108-7, a 20 μm aluminum foil is laminated on a 12 μm polyester film, and a polypropylene acid-modified resin is further provided thereon as a sealant layer to a thickness of 50 μm. 7 was produced. The A value of this combination was 2.3.

  Using the transparent barrier barrier film 107-3 and the sealing film 108-7, a comparative light emitting device 9 was produced in the same manner as in Example 1.

Comparative Example 4 (production of light emitting device 10)
As the transparent barrier film 107-4, the polyvinylidene chloride of the transparent barrier film 107-3 was changed to an aluminum oxide vapor-deposited film having a thickness of 5 μm to produce a transparent barrier film 107-4. The A value of the combination of the transparent barrier film 107-4 and the sealing film 108-7 produced above was 2.3 as in Comparative Example 3.

  The light-emitting device 10 was produced using this transparent barrier film 107-4 and the above-mentioned sealing film 108-7.

  When these light-emitting devices 9 and 10 were subjected to an accelerated test on moisture sealing properties in a state where wet heat (60 ° C., RH 90%, 500 hours) was applied, not only the stress concentration portion where cracks are likely to occur, Also, dark spots occurred on the entire surface of the light emitting device. This indicates that the moisture sealing properties of the first and second sealing films of the light-emitting devices 9 and 10 were not sufficient and could not withstand practical use.

  From the above results, it was found that by adjusting the flexural modulus of the transparent barrier film 107 and the sealing film 108, crack breakage of the barrier layer can be suppressed and the moisture sealing property of the light emitting device is excellent. Moreover, in the case of this invention, it was excellent in planarization of a transparent barrier film surface, and it confirmed that bonding | pasting, such as a light extraction film and a color tone adjustment film in a post process, was easy.

DESCRIPTION OF SYMBOLS 101 Light-emitting device 102 Transparent base material 103 Transparent anode layer 104 Organic layer 105 Cathode layer 106 Extraction electrode part 107 Transparent barrier film (1st sealing film)
108 sealing film (second sealing film)
109 OLED element 110 Inorganic sealing layer or thermosetting resin sealing layer 111 The step of the light emitting device included is absorbed even by the transparent barrier film, the step shape is generated, and the stress concentration is generated. Direction)
201 hole transport layer 202 light emitting layer 203 electron transport layer 301 transparent resin film 302 hard coat layer 303 gas barrier layer 304 adhesive layer (sealant layer)
305 Metal film 401 Lower chamber 402 Lower table 403 Bonding material 404 Upper chamber 405 Diaphragm portion 406 Vacuum portion 407 Positive pressure portion

Claims (8)

In an organic electroluminescence device in which at least a transparent anode layer, an organic layer including a light emitting layer and a cathode layer are laminated in this order on a transparent substrate, a first sealing film is disposed on the transparent anode layer side, and the cathode A light-emitting device having a sealing structure in which the organic electroluminescence element is sealed by installing a second sealing film on the layer side,
The light emitting device characterized in that the bending elastic modulus of the second sealing film is smaller than the bending elastic modulus of the first sealing film.   The first sealing film has at least a gas barrier layer and an adhesive layer laminated, and the second sealing film has at least a metal film and an adhesive layer laminated. The light emitting device according to claim 1.   The light emitting device according to claim 1, wherein the sealing structure is manufactured by vacuum bonding.   4. The light emitting device according to claim 1, wherein a film thickness of the second sealing film is smaller than a film thickness of the first sealing film. 5.   5. The light emitting device according to claim 1, wherein a bending elastic modulus of the second sealing film is 50% or less of a bending elastic modulus of the first sealing film. .   6. The light emitting device according to claim 1, further comprising a sealing layer made of an SiN inorganic film on a surface of the cathode layer opposite to the organic layer.   6. The light-emitting device according to claim 1, further comprising a sealing layer made of a thermosetting resin on a surface of the cathode layer opposite to the organic layer.   The light emitting device according to any one of claims 2 to 7, wherein the metal film of the second sealing film is aluminum.