TWI804554B - 載體的製造方法及晶圓的雙面研磨方法 - Google Patents

載體的製造方法及晶圓的雙面研磨方法 Download PDF

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Publication number
TWI804554B
TWI804554B TW107147300A TW107147300A TWI804554B TW I804554 B TWI804554 B TW I804554B TW 107147300 A TW107147300 A TW 107147300A TW 107147300 A TW107147300 A TW 107147300A TW I804554 B TWI804554 B TW I804554B
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TW
Taiwan
Prior art keywords
carrier
wafer
manufacturing
double
raw material
Prior art date
Application number
TW107147300A
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English (en)
Chinese (zh)
Other versions
TW201933463A (zh
Inventor
上野淳一
北爪大地
Original Assignee
日商信越半導體股份有限公司
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Application filed by 日商信越半導體股份有限公司 filed Critical 日商信越半導體股份有限公司
Publication of TW201933463A publication Critical patent/TW201933463A/zh
Application granted granted Critical
Publication of TWI804554B publication Critical patent/TWI804554B/zh

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23P—METAL-WORKING NOT OTHERWISE PROVIDED FOR; COMBINED OPERATIONS; UNIVERSAL MACHINE TOOLS
    • B23P9/00—Treating or finishing surfaces mechanically, with or without calibrating, primarily to resist wear or impact, e.g. smoothing or roughening turbine blades or bearings; Features of such surfaces not otherwise provided for, their treatment being unspecified
    • B23P9/02—Treating or finishing by applying pressure, e.g. knurling
    • B23P9/025—Treating or finishing by applying pressure, e.g. knurling to inner walls of holes by using axially moving tools
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
    • B24B37/08—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for double side lapping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/27—Work carriers
    • B24B37/28—Work carriers for double side lapping of plane surfaces
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
  • Laser Beam Processing (AREA)
  • Grinding Of Cylindrical And Plane Surfaces (AREA)
TW107147300A 2018-01-18 2018-12-27 載體的製造方法及晶圓的雙面研磨方法 TWI804554B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2018006654A JP6870623B2 (ja) 2018-01-18 2018-01-18 キャリアの製造方法及びウェーハの両面研磨方法
JPJP2018-006654 2018-01-18

Publications (2)

Publication Number Publication Date
TW201933463A TW201933463A (zh) 2019-08-16
TWI804554B true TWI804554B (zh) 2023-06-11

Family

ID=67315969

Family Applications (1)

Application Number Title Priority Date Filing Date
TW107147300A TWI804554B (zh) 2018-01-18 2018-12-27 載體的製造方法及晶圓的雙面研磨方法

Country Status (4)

Country Link
JP (1) JP6870623B2 (ko)
KR (1) KR102657849B1 (ko)
CN (1) CN110052955B (ko)
TW (1) TWI804554B (ko)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111745535B (zh) * 2020-07-07 2022-09-02 郑州宇光复合材料有限公司 一种手机玻璃研磨用耐磨护圈
CN116175397A (zh) * 2022-12-13 2023-05-30 西安奕斯伟材料科技有限公司 一种用于研磨硅片的设备和方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010052087A (ja) * 2008-08-28 2010-03-11 Okamoto Machine Tool Works Ltd 軸受研削用治具
JP2011025322A (ja) * 2009-07-21 2011-02-10 Shin Etsu Handotai Co Ltd 両面研磨装置用キャリアの製造方法、両面研磨装置用キャリア及びウェーハの両面研磨方法
TW201733738A (zh) * 2016-03-18 2017-10-01 Shin-Etsu Handotai Co Ltd 雙面研磨裝置用的載體的製造方法及晶圓的雙面研磨方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19905737C2 (de) * 1999-02-11 2000-12-14 Wacker Siltronic Halbleitermat Verfahren zur Herstellung einer Halbleiterscheibe mit verbesserter Ebenheit
JP2000271858A (ja) * 1999-03-24 2000-10-03 Sanko Spring Kk ラッピング用キャリヤ
DE10023002B4 (de) * 2000-05-11 2006-10-26 Siltronic Ag Satz von Läuferscheiben sowie dessen Verwendung
JP2004506314A (ja) * 2000-08-07 2004-02-26 エムイーエムシー・エレクトロニック・マテリアルズ・インコーポレイテッド 両面研磨法を用いて半導体ウェーハを処理する方法
KR100550491B1 (ko) * 2003-05-06 2006-02-09 스미토모덴키고교가부시키가이샤 질화물 반도체 기판 및 질화물 반도체 기판의 가공 방법
JP5630414B2 (ja) * 2011-10-04 2014-11-26 信越半導体株式会社 ウェーハの加工方法
JP2013235898A (ja) 2012-05-07 2013-11-21 Shirasaki Seisakusho:Kk 両面研磨装置用キャリアの製造方法及びこれを用いた両面研磨装置並びに両面研磨方法
JP5847789B2 (ja) * 2013-02-13 2016-01-27 信越半導体株式会社 両面研磨装置用キャリアの製造方法およびウエーハの両面研磨方法
JP6470976B2 (ja) * 2015-01-19 2019-02-13 Ｋｂセーレン株式会社 被研磨物保持材

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010052087A (ja) * 2008-08-28 2010-03-11 Okamoto Machine Tool Works Ltd 軸受研削用治具
JP2011025322A (ja) * 2009-07-21 2011-02-10 Shin Etsu Handotai Co Ltd 両面研磨装置用キャリアの製造方法、両面研磨装置用キャリア及びウェーハの両面研磨方法
TW201733738A (zh) * 2016-03-18 2017-10-01 Shin-Etsu Handotai Co Ltd 雙面研磨裝置用的載體的製造方法及晶圓的雙面研磨方法

Also Published As

Publication number Publication date
KR102657849B1 (ko) 2024-04-17
CN110052955A (zh) 2019-07-26
KR20190088414A (ko) 2019-07-26
JP2019123059A (ja) 2019-07-25
JP6870623B2 (ja) 2021-05-12
CN110052955B (zh) 2022-08-12
TW201933463A (zh) 2019-08-16

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