TWI803496B - 用於測量穿過一層之光的相位及振幅之裝置及方法 - Google Patents

用於測量穿過一層之光的相位及振幅之裝置及方法 Download PDF

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Publication number
TWI803496B
TWI803496B TW107117848A TW107117848A TWI803496B TW I803496 B TWI803496 B TW I803496B TW 107117848 A TW107117848 A TW 107117848A TW 107117848 A TW107117848 A TW 107117848A TW I803496 B TWI803496 B TW I803496B
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Taiwan
Prior art keywords
intensity values
target
phase shift
phase
reflected
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TW107117848A
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English (en)
Chinese (zh)
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TW201907228A (zh
Inventor
阿布都拉罕 賽斯金納
酷吉特 維克
艾瑞克 維拉
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美商克萊譚克公司
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/41—Refractivity; Phase-affecting properties, e.g. optical path length
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • G01N21/95607—Inspecting patterns on the surface of objects using a comparative method
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
    • G01J1/44—Electric circuits
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J9/00—Measuring optical phase difference; Determining degree of coherence; Measuring optical wavelength
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/55—Specular reflectivity
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
    • G03F1/84—Inspecting
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • H10P74/203—
    • H10P76/00—
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • G01N2021/95676—Masks, reticles, shadow masks

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
TW107117848A 2017-05-26 2018-05-25 用於測量穿過一層之光的相位及振幅之裝置及方法 TWI803496B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201762511444P 2017-05-26 2017-05-26
US62/511,444 2017-05-26
US15/882,951 2018-01-29
US15/882,951 US11131629B2 (en) 2017-05-26 2018-01-29 Apparatus and methods for measuring phase and amplitude of light through a layer

Publications (2)

Publication Number Publication Date
TW201907228A TW201907228A (zh) 2019-02-16
TWI803496B true TWI803496B (zh) 2023-06-01

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Country Link
US (1) US11131629B2 (enExample)
EP (1) EP3593209A4 (enExample)
JP (1) JP7169299B2 (enExample)
KR (1) KR102622710B1 (enExample)
TW (1) TWI803496B (enExample)
WO (1) WO2018218092A1 (enExample)

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JP7124071B2 (ja) 2017-10-05 2022-08-23 エーエスエムエル ネザーランズ ビー．ブイ． 基板上の１つ又は複数の構造の特性を決定するためのメトロロジシステムおよび方法
DE102019215972A1 (de) * 2019-10-17 2021-04-22 Carl Zeiss Smt Gmbh Verfahren zur Messung einer Reflektivität eines Objekts für Messlicht sowie Metrologiesystem zur Durchführung des Verfahrens
WO2021168613A1 (en) 2020-02-24 2021-09-02 Yangtze Memory Technologies Co., Ltd. Systems and methods for semiconductor chip surface topography metrology
WO2021168612A1 (en) * 2020-02-24 2021-09-02 Yangtze Memory Technologies Co., Ltd. Systems and methods for semiconductor chip surface topography metrology
WO2021168611A1 (en) 2020-02-24 2021-09-02 Yangtze Memory Technologies Co., Ltd. Systems and methods for semiconductor chip surface topography metrology
WO2021168610A1 (en) * 2020-02-24 2021-09-02 Yangtze Memory Technologies Co., Ltd. Systems having light source with extended spectrum for semiconductor chip surface topography metrology
US11828705B2 (en) * 2022-03-31 2023-11-28 Sparrow Detect, Inc. Apparatus and method for spectroscopically detecting a sample

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US5576829A (en) * 1990-10-08 1996-11-19 Nikon Corporation Method and apparatus for inspecting a phase-shifted mask
US20020131052A1 (en) * 2000-11-13 2002-09-19 Emery David G. Advanced phase shift inspection method
US6635393B2 (en) * 2001-03-23 2003-10-21 Numerical Technologies, Inc. Blank for alternating PSM photomask with charge dissipation layer
US20100119960A1 (en) * 2008-09-19 2010-05-13 Tokyo Electron Limited Dual Tone Development Processes
US20130122403A1 (en) * 2011-11-16 2013-05-16 Bong-Yeon Kim Mask for exposure and method of fabricating substrate using said mask
TW201708942A (zh) * 2015-08-10 2017-03-01 克萊譚克公司 用於預測晶圓級缺陷可印性之裝置及方法
TW201716883A (zh) * 2013-12-17 2017-05-16 Ａｓｍｌ荷蘭公司 檢查方法、微影裝置、光罩及基板

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US5576829A (en) * 1990-10-08 1996-11-19 Nikon Corporation Method and apparatus for inspecting a phase-shifted mask
US20020131052A1 (en) * 2000-11-13 2002-09-19 Emery David G. Advanced phase shift inspection method
US6635393B2 (en) * 2001-03-23 2003-10-21 Numerical Technologies, Inc. Blank for alternating PSM photomask with charge dissipation layer
US20100119960A1 (en) * 2008-09-19 2010-05-13 Tokyo Electron Limited Dual Tone Development Processes
US20130122403A1 (en) * 2011-11-16 2013-05-16 Bong-Yeon Kim Mask for exposure and method of fabricating substrate using said mask
TW201716883A (zh) * 2013-12-17 2017-05-16 Ａｓｍｌ荷蘭公司 檢查方法、微影裝置、光罩及基板
TW201708942A (zh) * 2015-08-10 2017-03-01 克萊譚克公司 用於預測晶圓級缺陷可印性之裝置及方法

Also Published As

Publication number Publication date
TW201907228A (zh) 2019-02-16
KR20200003233A (ko) 2020-01-08
US11131629B2 (en) 2021-09-28
EP3593209A1 (en) 2020-01-15
WO2018218092A1 (en) 2018-11-29
JP2020522124A (ja) 2020-07-27
JP7169299B2 (ja) 2022-11-10
US20180340886A1 (en) 2018-11-29
EP3593209A4 (en) 2021-01-20
KR102622710B1 (ko) 2024-01-08

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