JP7169299B2 - 層を介し光の位相及び振幅を計測する装置及び方法 - Google Patents

層を介し光の位相及び振幅を計測する装置及び方法 Download PDF

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JP7169299B2
JP7169299B2 JP2019563050A JP2019563050A JP7169299B2 JP 7169299 B2 JP7169299 B2 JP 7169299B2 JP 2019563050 A JP2019563050 A JP 2019563050A JP 2019563050 A JP2019563050 A JP 2019563050A JP 7169299 B2 JP7169299 B2 JP 7169299B2
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target
phase shift
intensity
phase
intensity value
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JP2020522124A5 (enExample
JP2020522124A (ja
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アブドゥラフマン セズジナー
カルジット バーク
エリック ヴェラ
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KLA Corp
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KLA Corp
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/41—Refractivity; Phase-affecting properties, e.g. optical path length
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
    • G01J1/44—Electric circuits
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J9/00—Measuring optical phase difference; Determining degree of coherence; Measuring optical wavelength
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/55—Specular reflectivity
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • G01N21/95607—Inspecting patterns on the surface of objects using a comparative method
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
    • G03F1/84—Inspecting
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • G01N2021/95676—Masks, reticles, shadow masks

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
JP2019563050A 2017-05-26 2018-05-25 層を介し光の位相及び振幅を計測する装置及び方法 Active JP7169299B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201762511444P 2017-05-26 2017-05-26
US62/511,444 2017-05-26
US15/882,951 US11131629B2 (en) 2017-05-26 2018-01-29 Apparatus and methods for measuring phase and amplitude of light through a layer
US15/882,951 2018-01-29
PCT/US2018/034521 WO2018218092A1 (en) 2017-05-26 2018-05-25 Apparatus and methods for measuring phase and amplitude of light through a layer

Publications (3)

Publication Number Publication Date
JP2020522124A JP2020522124A (ja) 2020-07-27
JP2020522124A5 JP2020522124A5 (enExample) 2021-07-26
JP7169299B2 true JP7169299B2 (ja) 2022-11-10

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Country Link
US (1) US11131629B2 (enExample)
EP (1) EP3593209A4 (enExample)
JP (1) JP7169299B2 (enExample)
KR (1) KR102622710B1 (enExample)
TW (1) TWI803496B (enExample)
WO (1) WO2018218092A1 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019068459A1 (en) 2017-10-05 2019-04-11 Stichting Vu METROLOGY SYSTEM AND METHOD FOR DETERMINING A CHARACTERISTIC OF ONE OR MORE STRUCTURES ON A SUBSTRATE
DE102019215972A1 (de) * 2019-10-17 2021-04-22 Carl Zeiss Smt Gmbh Verfahren zur Messung einer Reflektivität eines Objekts für Messlicht sowie Metrologiesystem zur Durchführung des Verfahrens
CN111386441B (zh) * 2020-02-24 2021-02-19 长江存储科技有限责任公司 用于半导体芯片表面形貌计量的系统
WO2021168611A1 (en) 2020-02-24 2021-09-02 Yangtze Memory Technologies Co., Ltd. Systems and methods for semiconductor chip surface topography metrology
CN111356896B (zh) 2020-02-24 2021-01-12 长江存储科技有限责任公司 用于半导体芯片表面形貌计量的系统和方法
WO2021168612A1 (en) 2020-02-24 2021-09-02 Yangtze Memory Technologies Co., Ltd. Systems and methods for semiconductor chip surface topography metrology
US11828705B2 (en) * 2022-03-31 2023-11-28 Sparrow Detect, Inc. Apparatus and method for spectroscopically detecting a sample

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001183812A (ja) 1999-12-24 2001-07-06 Hitachi Ltd 半導体集積回路装置の製造方法およびフォトマスクの検査方法
US20120075456A1 (en) 2010-09-29 2012-03-29 Carl Zeiss Sms Gmbh Method for characterizing a feature on a mask and device for carrying out the method
JP2012531042A (ja) 2009-06-19 2012-12-06 ケーエルエー−テンカー・コーポレーション 極紫外線マスクブランクの欠陥検出のための検査システム及び方法

Family Cites Families (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5576829A (en) * 1990-10-08 1996-11-19 Nikon Corporation Method and apparatus for inspecting a phase-shifted mask
JP3047446B2 (ja) * 1990-10-08 2000-05-29 株式会社ニコン 位相シフト用マスクの検査方法及び検査装置
US5420417A (en) * 1991-10-08 1995-05-30 Nikon Corporation Projection exposure apparatus with light distribution adjustment
KR0135729B1 (en) 1993-02-12 1998-04-24 Mitsubishi Electric Corp Attenuating type phase shifting mask and method of manufacturing thereof
JPH08248617A (ja) * 1995-03-15 1996-09-27 Toshiba Corp エッチング方法とエッチング装置及び位相シフトマスクの製造方法
JP3282790B2 (ja) * 1996-12-19 2002-05-20 レーザーテック株式会社 位相シフトマスクの欠陥検査装置
US6239878B1 (en) * 1999-10-01 2001-05-29 The Regents Of The University Of California Fourier-transform and global contrast interferometer alignment methods
US6836560B2 (en) * 2000-11-13 2004-12-28 Kla - Tencor Technologies Corporation Advanced phase shift inspection method
US6635393B2 (en) * 2001-03-23 2003-10-21 Numerical Technologies, Inc. Blank for alternating PSM photomask with charge dissipation layer
US7651821B2 (en) * 2002-03-04 2010-01-26 Massachusetts Institute Of Technology Method and system of lithography using masks having gray-tone features
US7056645B2 (en) * 2002-11-27 2006-06-06 Intel Corporation Use of chromeless phase shift features to pattern large area line/space geometries
DE10316123A1 (de) * 2003-04-04 2004-10-14 Carl Zeiss Smt Ag Vorrichtung und Verfahren zur Wellenfrontvermessung eines optischen Abbildungssystems durch phasenschiebende Interferometrie
US7288366B2 (en) 2003-10-24 2007-10-30 Chartered Semiconductor Manufacturing Ltd. Method for dual damascene patterning with single exposure using tri-tone phase shift mask
US7081956B1 (en) * 2003-12-04 2006-07-25 Advanced Micro Devices, Inc. Method and device for determining reflection lens pupil transmission distribution and illumination intensity distribution in reflective imaging system
US7262831B2 (en) * 2004-12-01 2007-08-28 Asml Netherlands B.V. Lithographic projection apparatus and device manufacturing method using such lithographic projection apparatus
US20070121090A1 (en) * 2005-11-30 2007-05-31 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20080116402A1 (en) * 2006-11-22 2008-05-22 Carl Zeiss Smt Ag Method and a device for measurement of scattered radiation at an optical system
US7643157B2 (en) 2007-01-04 2010-01-05 Lasertec Corporation Phase shift amount measurement apparatus and transmittance measurement apparatus
US8197996B2 (en) * 2008-09-19 2012-06-12 Tokyo Electron Limited Dual tone development processes
DE102008048660B4 (de) * 2008-09-22 2015-06-18 Carl Zeiss Sms Gmbh Verfahren und Vorrichtung zur Vermessung von Strukturen auf Photolithographiemasken
EP2354840A1 (en) * 2010-02-05 2011-08-10 Siemens Aktiengesellschaft An apparatus and a method for performing a difference measurement of an object image
KR20130067332A (ko) * 2011-11-16 2013-06-24 삼성디스플레이 주식회사 노광용 마스크 및 그 마스크를 사용한 기판 제조 방법
TWI497231B (zh) * 2011-11-18 2015-08-21 David Arthur Markle 以超越繞射極限光子直接寫入之裝置及方法
CN105612460B (zh) * 2013-10-09 2019-06-21 Asml荷兰有限公司 独立于偏振的干涉仪
JP5660514B1 (ja) * 2013-12-04 2015-01-28 レーザーテック株式会社 位相シフト量測定装置及び測定方法
DE102013020705B4 (de) * 2013-12-10 2018-01-25 Carl Zeiss Smt Gmbh Verfahren zur Untersuchung einer Maske
CN105980932B (zh) * 2013-12-17 2018-08-03 Asml荷兰有限公司 检查方法、光刻设备、掩模以及衬底
US9778205B2 (en) * 2014-03-25 2017-10-03 Kla-Tencor Corporation Delta die and delta database inspection
US10268682B2 (en) * 2014-04-02 2019-04-23 International Business Machines Corporation Adjusting text in message in light of recipients interests and/or personality traits to sustain recipient's interest in message
CN107851315B (zh) * 2015-08-10 2020-03-17 科磊股份有限公司 用于预测晶片级缺陷可印性的设备及方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001183812A (ja) 1999-12-24 2001-07-06 Hitachi Ltd 半導体集積回路装置の製造方法およびフォトマスクの検査方法
JP2012531042A (ja) 2009-06-19 2012-12-06 ケーエルエー−テンカー・コーポレーション 極紫外線マスクブランクの欠陥検出のための検査システム及び方法
US20120075456A1 (en) 2010-09-29 2012-03-29 Carl Zeiss Sms Gmbh Method for characterizing a feature on a mask and device for carrying out the method

Also Published As

Publication number Publication date
EP3593209A4 (en) 2021-01-20
US11131629B2 (en) 2021-09-28
TWI803496B (zh) 2023-06-01
KR102622710B1 (ko) 2024-01-08
US20180340886A1 (en) 2018-11-29
KR20200003233A (ko) 2020-01-08
EP3593209A1 (en) 2020-01-15
WO2018218092A1 (en) 2018-11-29
TW201907228A (zh) 2019-02-16
JP2020522124A (ja) 2020-07-27

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