TWI800898B - 半導體元件製造方法與電漿蝕刻系統 - Google Patents

半導體元件製造方法與電漿蝕刻系統 Download PDF

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Publication number
TWI800898B
TWI800898B TW110130406A TW110130406A TWI800898B TW I800898 B TWI800898 B TW I800898B TW 110130406 A TW110130406 A TW 110130406A TW 110130406 A TW110130406 A TW 110130406A TW I800898 B TWI800898 B TW I800898B
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TW
Taiwan
Prior art keywords
manufacturing
semiconductor device
plasma etching
etching system
plasma
Prior art date
Application number
TW110130406A
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English (en)
Other versions
TW202249056A (zh
Inventor
洪伯隆
謝佾蒼
湯又錫
廖志騰
鄭至欽
Original Assignee
台灣積體電路製造股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 台灣積體電路製造股份有限公司 filed Critical 台灣積體電路製造股份有限公司
Publication of TW202249056A publication Critical patent/TW202249056A/zh
Application granted granted Critical
Publication of TWI800898B publication Critical patent/TWI800898B/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H01J37/32972—Spectral analysis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/245—Detection characterised by the variable being measured
    • H01J2237/24507—Intensity, dose or other characteristics of particle beams or electromagnetic radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Drying Of Semiconductors (AREA)
TW110130406A 2021-06-07 2021-08-18 半導體元件製造方法與電漿蝕刻系統 TWI800898B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US17/341,367 2021-06-07
US17/341,367 US20220392785A1 (en) 2021-06-07 2021-06-07 Small gas flow monitoring of dry etcher by oes signal

Publications (2)

Publication Number Publication Date
TW202249056A TW202249056A (zh) 2022-12-16
TWI800898B true TWI800898B (zh) 2023-05-01

Family

ID=83404933

Family Applications (1)

Application Number Title Priority Date Filing Date
TW110130406A TWI800898B (zh) 2021-06-07 2021-08-18 半導體元件製造方法與電漿蝕刻系統

Country Status (3)

Country Link
US (1) US20220392785A1 (zh)
CN (1) CN115148592A (zh)
TW (1) TWI800898B (zh)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200403704A (en) * 2002-07-26 2004-03-01 Varian Semiconductor Equipment Method and apparatus for monitoring plasma parameters in plasma doping systems
US20200105510A1 (en) * 2018-09-27 2020-04-02 Tokyo Electron Limited Methods for stability monitoring and improvements to plasma sources for plasma processing
CN111800929A (zh) * 2019-04-05 2020-10-20 仕富梅集团公司 辉光等离子体稳定

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5658423A (en) * 1995-11-27 1997-08-19 International Business Machines Corporation Monitoring and controlling plasma processes via optical emission using principal component analysis
US5871658A (en) * 1997-01-13 1999-02-16 Taiwan Semiconductor Manufacturing Company, Ltd. Optical emisson spectroscopy (OES) method for monitoring and controlling plasma etch process when forming patterned layers
US6060328A (en) * 1997-09-05 2000-05-09 Advanced Micro Devices, Inc. Methods and arrangements for determining an endpoint for an in-situ local interconnect etching process
JPH11176815A (ja) * 1997-12-15 1999-07-02 Ricoh Co Ltd ドライエッチングの終点判定方法およびドライエッチング装置
US6635185B2 (en) * 1997-12-31 2003-10-21 Alliedsignal Inc. Method of etching and cleaning using fluorinated carbonyl compounds
CN101689222B (zh) * 2007-05-07 2012-12-26 真实仪器公司 用于故障检验和过程监测的辐射光学监测系统的校准
JP5383265B2 (ja) * 2009-03-17 2014-01-08 株式会社日立ハイテクノロジーズ エッチング装置、分析装置、エッチング処理方法、およびエッチング処理プログラム
JP7058545B2 (ja) * 2018-04-25 2022-04-22 東京エレクトロン株式会社 ガス供給管のクリーニング方法および処理システム

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200403704A (en) * 2002-07-26 2004-03-01 Varian Semiconductor Equipment Method and apparatus for monitoring plasma parameters in plasma doping systems
US20200105510A1 (en) * 2018-09-27 2020-04-02 Tokyo Electron Limited Methods for stability monitoring and improvements to plasma sources for plasma processing
TW202023326A (zh) * 2018-09-27 2020-06-16 日商東京威力科創股份有限公司 對用於電漿處理之電漿源進行改善及穩定性監測的方法
CN111800929A (zh) * 2019-04-05 2020-10-20 仕富梅集团公司 辉光等离子体稳定

Also Published As

Publication number Publication date
US20220392785A1 (en) 2022-12-08
CN115148592A (zh) 2022-10-04
TW202249056A (zh) 2022-12-16

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