TWI800898B - 半導體元件製造方法與電漿蝕刻系統 - Google Patents
半導體元件製造方法與電漿蝕刻系統 Download PDFInfo
- Publication number
- TWI800898B TWI800898B TW110130406A TW110130406A TWI800898B TW I800898 B TWI800898 B TW I800898B TW 110130406 A TW110130406 A TW 110130406A TW 110130406 A TW110130406 A TW 110130406A TW I800898 B TWI800898 B TW I800898B
- Authority
- TW
- Taiwan
- Prior art keywords
- manufacturing
- semiconductor device
- plasma etching
- etching system
- plasma
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000001020 plasma etching Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
- H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
- H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
- H01J37/32972—Spectral analysis
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/245—Detection characterised by the variable being measured
- H01J2237/24507—Intensity, dose or other characteristics of particle beams or electromagnetic radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US17/341,367 | 2021-06-07 | ||
US17/341,367 US20220392785A1 (en) | 2021-06-07 | 2021-06-07 | Small gas flow monitoring of dry etcher by oes signal |
Publications (2)
Publication Number | Publication Date |
---|---|
TW202249056A TW202249056A (zh) | 2022-12-16 |
TWI800898B true TWI800898B (zh) | 2023-05-01 |
Family
ID=83404933
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW110130406A TWI800898B (zh) | 2021-06-07 | 2021-08-18 | 半導體元件製造方法與電漿蝕刻系統 |
Country Status (3)
Country | Link |
---|---|
US (1) | US20220392785A1 (zh) |
CN (1) | CN115148592A (zh) |
TW (1) | TWI800898B (zh) |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW200403704A (en) * | 2002-07-26 | 2004-03-01 | Varian Semiconductor Equipment | Method and apparatus for monitoring plasma parameters in plasma doping systems |
US20200105510A1 (en) * | 2018-09-27 | 2020-04-02 | Tokyo Electron Limited | Methods for stability monitoring and improvements to plasma sources for plasma processing |
CN111800929A (zh) * | 2019-04-05 | 2020-10-20 | 仕富梅集团公司 | 辉光等离子体稳定 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5658423A (en) * | 1995-11-27 | 1997-08-19 | International Business Machines Corporation | Monitoring and controlling plasma processes via optical emission using principal component analysis |
US5871658A (en) * | 1997-01-13 | 1999-02-16 | Taiwan Semiconductor Manufacturing Company, Ltd. | Optical emisson spectroscopy (OES) method for monitoring and controlling plasma etch process when forming patterned layers |
US6060328A (en) * | 1997-09-05 | 2000-05-09 | Advanced Micro Devices, Inc. | Methods and arrangements for determining an endpoint for an in-situ local interconnect etching process |
JPH11176815A (ja) * | 1997-12-15 | 1999-07-02 | Ricoh Co Ltd | ドライエッチングの終点判定方法およびドライエッチング装置 |
US6635185B2 (en) * | 1997-12-31 | 2003-10-21 | Alliedsignal Inc. | Method of etching and cleaning using fluorinated carbonyl compounds |
CN101689222B (zh) * | 2007-05-07 | 2012-12-26 | 真实仪器公司 | 用于故障检验和过程监测的辐射光学监测系统的校准 |
JP5383265B2 (ja) * | 2009-03-17 | 2014-01-08 | 株式会社日立ハイテクノロジーズ | エッチング装置、分析装置、エッチング処理方法、およびエッチング処理プログラム |
JP7058545B2 (ja) * | 2018-04-25 | 2022-04-22 | 東京エレクトロン株式会社 | ガス供給管のクリーニング方法および処理システム |
-
2021
- 2021-06-07 US US17/341,367 patent/US20220392785A1/en active Pending
- 2021-08-18 TW TW110130406A patent/TWI800898B/zh active
-
2022
- 2022-01-29 CN CN202210112349.9A patent/CN115148592A/zh active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW200403704A (en) * | 2002-07-26 | 2004-03-01 | Varian Semiconductor Equipment | Method and apparatus for monitoring plasma parameters in plasma doping systems |
US20200105510A1 (en) * | 2018-09-27 | 2020-04-02 | Tokyo Electron Limited | Methods for stability monitoring and improvements to plasma sources for plasma processing |
TW202023326A (zh) * | 2018-09-27 | 2020-06-16 | 日商東京威力科創股份有限公司 | 對用於電漿處理之電漿源進行改善及穩定性監測的方法 |
CN111800929A (zh) * | 2019-04-05 | 2020-10-20 | 仕富梅集团公司 | 辉光等离子体稳定 |
Also Published As
Publication number | Publication date |
---|---|
US20220392785A1 (en) | 2022-12-08 |
CN115148592A (zh) | 2022-10-04 |
TW202249056A (zh) | 2022-12-16 |
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