TWI799797B - 基板處理方法及基板處理裝置 - Google Patents

基板處理方法及基板處理裝置 Download PDF

Info

Publication number
TWI799797B
TWI799797B TW110106604A TW110106604A TWI799797B TW I799797 B TWI799797 B TW I799797B TW 110106604 A TW110106604 A TW 110106604A TW 110106604 A TW110106604 A TW 110106604A TW I799797 B TWI799797 B TW I799797B
Authority
TW
Taiwan
Prior art keywords
substrate processing
processing device
processing method
substrate
processing
Prior art date
Application number
TW110106604A
Other languages
English (en)
Other versions
TW202145410A (zh
Inventor
秋山勝哉
吉田幸史
Original Assignee
日商斯庫林集團股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商斯庫林集團股份有限公司 filed Critical 日商斯庫林集團股份有限公司
Publication of TW202145410A publication Critical patent/TW202145410A/zh
Application granted granted Critical
Publication of TWI799797B publication Critical patent/TWI799797B/zh

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304Mechanical treatment, e.g. grinding, polishing, cutting

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
TW110106604A 2020-02-28 2021-02-25 基板處理方法及基板處理裝置 TWI799797B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2020034334A JP7469073B2 (ja) 2020-02-28 2020-02-28 基板処理方法および基板処理装置
JP2020-034334 2020-02-28

Publications (2)

Publication Number Publication Date
TW202145410A TW202145410A (zh) 2021-12-01
TWI799797B true TWI799797B (zh) 2023-04-21

Family

ID=77491319

Family Applications (1)

Application Number Title Priority Date Filing Date
TW110106604A TWI799797B (zh) 2020-02-28 2021-02-25 基板處理方法及基板處理裝置

Country Status (3)

Country Link
JP (1) JP7469073B2 (zh)
TW (1) TWI799797B (zh)
WO (1) WO2021171931A1 (zh)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023238679A1 (ja) * 2022-06-08 2023-12-14 東京エレクトロン株式会社 基板処理装置、基板処理方法及びコンピュータ読み取り可能な記録媒体

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013074126A (ja) * 2011-09-28 2013-04-22 Dainippon Screen Mfg Co Ltd 基板処理装置および基板処理方法
JP2016107272A (ja) * 2014-12-02 2016-06-20 株式会社Screenホールディングス 基板処理装置および基板処理方法
WO2019230404A1 (ja) * 2018-05-31 2019-12-05 株式会社Screenホールディングス 基板処理方法および基板処理装置
TW202004893A (zh) * 2018-05-31 2020-01-16 日商斯庫林集團股份有限公司 基板處理方法及基板處理裝置
TW202006855A (zh) * 2018-07-13 2020-02-01 日商斯庫林集團股份有限公司 基板處理裝置及基板處理方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6980457B2 (ja) 2017-08-23 2021-12-15 東京エレクトロン株式会社 基板処理装置、基板処理方法および記憶媒体

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013074126A (ja) * 2011-09-28 2013-04-22 Dainippon Screen Mfg Co Ltd 基板処理装置および基板処理方法
JP2016107272A (ja) * 2014-12-02 2016-06-20 株式会社Screenホールディングス 基板処理装置および基板処理方法
WO2019230404A1 (ja) * 2018-05-31 2019-12-05 株式会社Screenホールディングス 基板処理方法および基板処理装置
TW202004893A (zh) * 2018-05-31 2020-01-16 日商斯庫林集團股份有限公司 基板處理方法及基板處理裝置
TW202006855A (zh) * 2018-07-13 2020-02-01 日商斯庫林集團股份有限公司 基板處理裝置及基板處理方法

Also Published As

Publication number Publication date
TW202145410A (zh) 2021-12-01
JP7469073B2 (ja) 2024-04-16
WO2021171931A1 (ja) 2021-09-02
JP2021136420A (ja) 2021-09-13

Similar Documents

Publication Publication Date Title
EP4159325A4 (en) SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS
SG11202011847TA (en) Method of manufacturing semiconductor device, substrate processing apparatus, and program
TWI800586B (zh) 基板處理裝置及基板處理方法
SG11202008792XA (en) Substrate processing apparatus, method of manufacturing semiconductor device and program
SG10201908021XA (en) Method of manufacturing semiconductor device, substrate processing apparatus, and program
SG10201908479TA (en) Method of manufacturing semiconductor device, substrate processing apparatus, and program
TWI800746B (zh) 半導體裝置之製造方法、基板處理方法、基板處理裝置及其程式
TWI800965B (zh) 等離子體處理裝置及調節方法
TWI799695B (zh) 基板處理方法以及基板處理裝置
SG10201907969QA (en) Method of manufacturing semiconductor device, substrate processing apparatus, and program
TWI799797B (zh) 基板處理方法及基板處理裝置
SG11202009154TA (en) Method of manufacturing semiconductor device, substrate processing apparatus, and program
TWI799562B (zh) 基板載置裝置及基板載置方法
TWI799602B (zh) 電漿處理裝置及電漿蝕刻方法
GB2611394B (en) Processing method and device
TWI800078B (zh) 真空處理裝置及真空處理方法
SG11202007666PA (en) Method of manufacturing semiconductor device, substrate processing apparatus and program
TWI800128B (zh) 加工裝置
TWI799976B (zh) 處理液供給裝置、基板處理裝置以及處理液供給方法
SG10201908412UA (en) Method of manufacturing semiconductor device, substrate processing apparatus, and program
SG10202100728TA (en) Method of manufacturing semiconductor device, substrate processing apparatus, and program
SG11202007004QA (en) Substrate processing apparatus, method of manufacturing semiconductor device, and program
TWI858250B (zh) 半導體元件檢查方法及半導體元件檢查裝置
TWI858249B (zh) 半導體元件檢查方法及半導體元件檢查裝置
TWI859911B (zh) 基板處理方法、基板處理裝置及基板處理液