TWI800965B - 等離子體處理裝置及調節方法 - Google Patents

等離子體處理裝置及調節方法 Download PDF

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Publication number
TWI800965B
TWI800965B TW110140303A TW110140303A TWI800965B TW I800965 B TWI800965 B TW I800965B TW 110140303 A TW110140303 A TW 110140303A TW 110140303 A TW110140303 A TW 110140303A TW I800965 B TWI800965 B TW I800965B
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TW
Taiwan
Prior art keywords
processing device
plasma processing
adjustment method
adjustment
plasma
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Application number
TW110140303A
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English (en)
Other versions
TW202231130A (zh
Inventor
楊金全
興才 蘇
徐朝陽
Original Assignee
大陸商中微半導體設備（上海）股份有限公司
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Publication of TW202231130A publication Critical patent/TW202231130A/zh
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Publication of TWI800965B publication Critical patent/TWI800965B/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32633—Baffles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H01J37/32871—Means for trapping or directing unwanted particles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H01J2237/3343—Problems associated with etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Public Health (AREA)
  • Epidemiology (AREA)
  • Health & Medical Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
TW110140303A 2020-12-23 2021-10-29 等離子體處理裝置及調節方法 TWI800965B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN202011540616.XA CN114664622B (zh) 2020-12-23 2020-12-23 一种等离子体处理装置及调节方法
CN202011540616.X 2020-12-23

Publications (2)

Publication Number Publication Date
TW202231130A TW202231130A (zh) 2022-08-01
TWI800965B true TWI800965B (zh) 2023-05-01

Family

ID=82025598

Family Applications (1)

Application Number Title Priority Date Filing Date
TW110140303A TWI800965B (zh) 2020-12-23 2021-10-29 等離子體處理裝置及調節方法

Country Status (2)

Country Link
CN (1) CN114664622B (zh)
TW (1) TWI800965B (zh)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115852337A (zh) * 2022-11-25 2023-03-28 拓荆科技股份有限公司 喷淋板、半导体器件的加工设备以及方法
CN117116816B (zh) * 2023-10-24 2024-01-23 上海谙邦半导体设备有限公司 进气装置及进气方法

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TWI494028B (zh) * 2008-07-23 2015-07-21 Applied Materials Inc 具有可控制分配ｒｆ功率至製程套組環之電漿反應器的工件支撐件
TWI514468B (zh) * 2012-09-29 2015-12-21
TWI524415B (zh) * 2009-04-06 2016-03-01 蘭姆研究公司 具有大表面面積之接地侷限環
KR101687565B1 (ko) * 2009-03-30 2016-12-19 도쿄엘렉트론가부시키가이샤 플라즈마 처리 장치 및 플라즈마 처리 방법
TWI588866B (zh) * 2010-05-21 2017-06-21 蘭姆研究公司 電漿處理設備用之可動式腔室襯墊電漿侷限隔屏組合
US10763085B2 (en) * 2017-12-15 2020-09-01 Applied Materials, Inc. Shaped electrodes for improved plasma exposure from vertical plasma source

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JP2002009048A (ja) * 2000-06-20 2002-01-11 Matsushita Electric Ind Co Ltd プラズマ処理装置のフォーカスリング
US7988814B2 (en) * 2006-03-17 2011-08-02 Tokyo Electron Limited Plasma processing apparatus, plasma processing method, focus ring, and focus ring component
CN104051210B (zh) * 2013-03-12 2016-05-11 中微半导体设备(上海)有限公司 一种减少门效应的等离子体处理装置
CN104217914B (zh) * 2013-05-31 2016-12-28 中微半导体设备(上海)有限公司 等离子体处理装置
CN105336561B (zh) * 2014-07-18 2017-07-21 中微半导体设备(上海)有限公司 等离子体刻蚀装置
CN105632861B (zh) * 2014-11-03 2017-10-17 中微半导体设备(上海)有限公司 电感耦合等离子体处理装置及等离子体刻蚀方法
CN106033737B (zh) * 2015-03-16 2019-01-18 中微半导体设备(上海)有限公司 真空锁系统及基片传送方法
CN106191812B (zh) * 2015-05-05 2019-01-22 中微半导体设备(上海)有限公司 化学气相沉积装置及清洁其排气口的方法
CN106298638B (zh) * 2015-06-11 2019-04-09 中微半导体设备(上海)股份有限公司 刻蚀形成硅通孔的方法
CN106935469B (zh) * 2015-12-31 2018-11-06 中微半导体设备(上海)有限公司 一种实现外部磁场屏蔽的等离子处理器
WO2017221829A1 (ja) * 2016-06-22 2017-12-28 株式会社アルバック プラズマ処理装置
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CN108269727A (zh) * 2016-12-30 2018-07-10 中微半导体设备(上海)有限公司 电容耦合等离子体处理装置与等离子体处理方法
CN108269728A (zh) * 2016-12-30 2018-07-10 中微半导体设备(上海)有限公司 电容耦合等离子体处理装置与等离子体处理方法
CN110416046B (zh) * 2018-04-27 2022-03-11 中微半导体设备(上海)股份有限公司 一种极板间距可调容性耦合等离子体处理系统及其方法
CN110416049B (zh) * 2018-04-28 2022-02-11 中微半导体设备(上海)股份有限公司 可调节边缘射频等离子体分布的ccp刻蚀装置及其方法
CN112447474B (zh) * 2019-09-04 2022-11-04 中微半导体设备(上海)股份有限公司 一种具有可移动环的等离子体处理器
CN211507566U (zh) * 2019-12-20 2020-09-15 中微半导体设备(上海)股份有限公司 一种具有射频功率分布调节功能的等离子体处理装置
CN213583695U (zh) * 2020-12-23 2021-06-29 中微半导体设备(上海)股份有限公司 一种等离子体处理装置

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI494028B (zh) * 2008-07-23 2015-07-21 Applied Materials Inc 具有可控制分配ｒｆ功率至製程套組環之電漿反應器的工件支撐件
KR101687565B1 (ko) * 2009-03-30 2016-12-19 도쿄엘렉트론가부시키가이샤 플라즈마 처리 장치 및 플라즈마 처리 방법
TWI524415B (zh) * 2009-04-06 2016-03-01 蘭姆研究公司 具有大表面面積之接地侷限環
TWI588866B (zh) * 2010-05-21 2017-06-21 蘭姆研究公司 電漿處理設備用之可動式腔室襯墊電漿侷限隔屏組合
TWI514468B (zh) * 2012-09-29 2015-12-21
US10763085B2 (en) * 2017-12-15 2020-09-01 Applied Materials, Inc. Shaped electrodes for improved plasma exposure from vertical plasma source

Also Published As

Publication number Publication date
CN114664622B (zh) 2024-07-05
TW202231130A (zh) 2022-08-01
CN114664622A (zh) 2022-06-24

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