TWI799480B - Substrate processing device and temperature control method - Google Patents

Substrate processing device and temperature control method Download PDF

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Publication number
TWI799480B
TWI799480B TW107145845A TW107145845A TWI799480B TW I799480 B TWI799480 B TW I799480B TW 107145845 A TW107145845 A TW 107145845A TW 107145845 A TW107145845 A TW 107145845A TW I799480 B TWI799480 B TW I799480B
Authority
TW
Taiwan
Prior art keywords
processing device
control method
temperature control
substrate processing
substrate
Prior art date
Application number
TW107145845A
Other languages
Chinese (zh)
Other versions
TW201937590A (en
Inventor
田中誠治
里吉務
Original Assignee
日商東京威力科創股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商東京威力科創股份有限公司 filed Critical 日商東京威力科創股份有限公司
Publication of TW201937590A publication Critical patent/TW201937590A/en
Application granted granted Critical
Publication of TWI799480B publication Critical patent/TWI799480B/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
TW107145845A 2017-12-22 2018-12-19 Substrate processing device and temperature control method TWI799480B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017246780A JP7008497B2 (en) 2017-12-22 2017-12-22 Substrate processing equipment and temperature control method
JP2017-246780 2017-12-22

Publications (2)

Publication Number Publication Date
TW201937590A TW201937590A (en) 2019-09-16
TWI799480B true TWI799480B (en) 2023-04-21

Family

ID=67165176

Family Applications (1)

Application Number Title Priority Date Filing Date
TW107145845A TWI799480B (en) 2017-12-22 2018-12-19 Substrate processing device and temperature control method

Country Status (4)

Country Link
JP (1) JP7008497B2 (en)
KR (1) KR102273516B1 (en)
CN (1) CN110010440B (en)
TW (1) TWI799480B (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111509952B (en) * 2020-04-24 2021-09-28 江苏哈哈社信息科技有限公司 Intelligent switching power supply
JPWO2023054531A1 (en) * 2021-09-29 2023-04-06
JP2023097115A (en) 2021-12-27 2023-07-07 東京エレクトロン株式会社 Substrate processing apparatus and substrate processing method

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200705515A (en) * 2005-05-17 2007-02-01 Tokyo Electron Ltd Plasma treatment device
JP2012253347A (en) * 2011-05-31 2012-12-20 Semes Co Ltd Apparatus for treating substrate
JP2014528168A (en) * 2011-09-20 2014-10-23 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ Heating plate with diode planar heater zone for semiconductor processing
TW201703137A (en) * 2015-06-16 2017-01-16 Tokyo Electron Ltd Film forming apparatus, film forming method and substrate carrying table capable of forming a uniform film and forming the film only on a substrate
TW201717710A (en) * 2015-07-22 2017-05-16 Tokyo Electron Ltd Plasma processing device which is provided with plasma resistance and has a light-weight metal window

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08157296A (en) * 1994-12-05 1996-06-18 Fujitsu Ltd Device for supplying raw material or gas
JP2005260251A (en) * 1999-04-06 2005-09-22 Tokyo Electron Ltd Mounting stand, plasma processing apparatus, and manufacturing method for mounting stand
JP3668079B2 (en) * 1999-05-31 2005-07-06 忠弘 大見 Plasma process equipment
JP4826483B2 (en) 2007-01-19 2011-11-30 東京エレクトロン株式会社 Plasma processing equipment
JP5224855B2 (en) * 2008-03-05 2013-07-03 東京エレクトロン株式会社 Electrode unit, substrate processing apparatus, and temperature control method for electrode unit
US9155134B2 (en) * 2008-10-17 2015-10-06 Applied Materials, Inc. Methods and apparatus for rapidly responsive heat control in plasma processing devices
JP6010433B2 (en) * 2012-11-15 2016-10-19 東京エレクトロン株式会社 Substrate mounting table and substrate processing apparatus
JP6276919B2 (en) * 2013-02-01 2018-02-07 株式会社日立ハイテクノロジーズ Plasma processing apparatus and sample stage
KR101994874B1 (en) * 2013-03-14 2019-07-01 도쿄엘렉트론가부시키가이샤 Drying apparatus and drying method
TWI508397B (en) * 2013-10-18 2015-11-11 Plug electrical connectors, wires and their components
JP6456601B2 (en) * 2014-05-07 2019-01-23 東京エレクトロン株式会社 Plasma deposition system

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200705515A (en) * 2005-05-17 2007-02-01 Tokyo Electron Ltd Plasma treatment device
JP2012253347A (en) * 2011-05-31 2012-12-20 Semes Co Ltd Apparatus for treating substrate
JP2014528168A (en) * 2011-09-20 2014-10-23 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ Heating plate with diode planar heater zone for semiconductor processing
TW201703137A (en) * 2015-06-16 2017-01-16 Tokyo Electron Ltd Film forming apparatus, film forming method and substrate carrying table capable of forming a uniform film and forming the film only on a substrate
TW201717710A (en) * 2015-07-22 2017-05-16 Tokyo Electron Ltd Plasma processing device which is provided with plasma resistance and has a light-weight metal window

Also Published As

Publication number Publication date
CN110010440B (en) 2022-06-07
KR20190076872A (en) 2019-07-02
KR102273516B1 (en) 2021-07-05
JP2019114653A (en) 2019-07-11
TW201937590A (en) 2019-09-16
JP7008497B2 (en) 2022-01-25
CN110010440A (en) 2019-07-12

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