JP2023097115A - Substrate processing apparatus and substrate processing method - Google Patents

Abstract

To suppress the occurrence of a malfunction due to the temperature of a ring member in substrate processing using a substrate processing device having the ring member surrounding the periphery of a placement surface of a placement table.SOLUTION: A substrate processing device for processing a substrate comprises: a processing chamber in which the substrate is processed; a chamber wall part which constitutes the processing chamber; a placement table which is installed in the processing chamber and has a placement surface on which the substrate is placed; a ring member which is arranged in a manner to surround the outer periphery of the placement surface; a first channel which is provided in a constitution member of the substrate processing device other than the ring member and in which a temperature control medium circulates; and a second channel which is provided in the ring member and is connected to the first channel such that the fluid can circulate.SELECTED DRAWING: Figure 1

Description

The present disclosure relates to a substrate processing apparatus and a substrate processing method.

Japanese Unexamined Patent Application Publication No. 2002-200000 discloses a substrate processing apparatus having a shower head that is arranged in a processing container so as to face a mounting table on which a substrate is mounted and ejects a processing gas. In this substrate processing apparatus, channels are formed in the base member of the shower head, the side wall portion of the container body of the processing container, and the mounting table. A separate heat transfer medium is circulated from the chiller unit.

JP 2019-114653 A

The technology according to the present disclosure suppresses problems caused by the temperature of the ring member in substrate processing using a substrate processing apparatus that includes a ring member that surrounds the mounting surface of the mounting table.

One aspect of the present disclosure is a substrate processing apparatus for processing a substrate, comprising: a processing chamber in which the substrate is processed; a chamber wall portion constituting the processing chamber; a mounting table having a mounting surface on which the substrate is mounted; a ring member disposed surrounding the outer periphery of the mounting surface; a first flow path through which a temperature control medium flows; and a second flow path provided inside the ring member and connected to the first flow path so that a fluid can flow therethrough.

According to the present disclosure, in substrate processing using a substrate processing apparatus that includes a ring member that surrounds the mounting surface of the mounting table, it is possible to suppress problems caused by the temperature of the ring member.

1 is a longitudinal sectional view showing an outline of a configuration of a plasma processing apparatus as a substrate processing apparatus according to this embodiment; FIG. 1 is a cross-sectional view showing an outline of a configuration of a plasma processing apparatus as a substrate processing apparatus according to this embodiment; FIG. FIG. 2 is a partially enlarged view of FIG. 1; It is a cross-sectional view of a shield ring. It is a side view of a division member. FIG. 2 is a schematic diagram showing the configuration of a temperature control fluid supply system in a plasma processing apparatus; FIG. 3 is a schematic diagram showing another configuration example of a temperature control fluid supply system in a plasma processing apparatus; FIG. 3 is a schematic diagram showing another configuration example of a temperature control fluid supply system in a plasma processing apparatus; FIG. 10 is a diagram illustrating another example of a shield ring; FIG. 11 is a partially enlarged top view of the inside of the processing container according to another embodiment; FIG. 11 is a partially enlarged cross-sectional view of the periphery of a shield ring according to another embodiment; FIG. 10 is a diagram showing another example of the shield ring and the rectifying wall;

BACKGROUND ART In a manufacturing process of a flat panel display (FPD) such as a liquid crystal display (LCD), a substrate such as a glass substrate is subjected to substrate processing such as etching and film formation. These substrate processes are performed while the substrate is placed on the upper surface of the mounting table in the processing container, that is, the mounting surface.

Also, in order to obtain good and uniform plasma processing results in the central portion of the substrate and the peripheral portion of the substrate, an annular member surrounding the mounting surface of the mounting table in a plan view, that is, a ring member is mounted. There is

However, the use of the ring member may cause problems due to the temperature of the ring member. For example, when an etching process is performed using a ring member, reaction products accumulate on the ring member, and the reaction products scatter when substrates are replaced, contaminating the surface of the substrate and the inside of the processing container. There is

Therefore, the technique according to the present disclosure suppresses the occurrence of problems caused by the temperature of the ring member in substrate processing using a substrate processing apparatus including the ring member.

A substrate processing apparatus and a substrate processing method according to the present embodiment will be described below with reference to the drawings. In the present specification and drawings, elements having substantially the same functional configuration are denoted by the same reference numerals, thereby omitting redundant description.

<Plasma processing apparatus 1>
1 and 2 are respectively a vertical cross-sectional view and a cross-sectional view showing an outline of the configuration of a plasma processing apparatus as a substrate processing apparatus according to this embodiment. 3 is a partially enlarged view of FIG. 1. FIG.
The plasma processing apparatus 1 of FIGS. 1 and 2 performs plasma processing using plasma of a processing gas as substrate processing on a rectangular glass substrate G (hereinafter referred to as "substrate G") as a substrate. The plasma processing performed by the plasma processing apparatus 1 includes, for example, etching processing for FPD, film forming processing, ashing processing, and the like. Through these processes, electronic devices such as light-emitting elements and driving circuits for the light-emitting elements are formed on the substrate G. FIG.

The plasma processing apparatus 1 includes a container body 10 forming a part of a processing container in which substrates are processed. The container body 10 is made of a conductive material (eg, aluminum) and formed into a bottomed prismatic shape, and is electrically grounded. The container main body 10 has a side wall portion 10a forming each side surface of a rectangular tubular shape, and a bottom wall portion 10b forming a bottom surface. Since corrosive gas is often used for plasma treatment, the inner wall surface of the container body 10 may be subjected to corrosion-resistant coating treatment such as anodization treatment for the purpose of improving corrosion resistance. An opening is formed in the upper surface of the container body 10 . This opening is airtightly closed by a rectangular metal window 20 provided insulated from the container body 10, specifically, airtightly closed by the metal window 20 and a metal frame 15 which will be described later. The space surrounded by the container body 10, the metal frame 15, and the metal window 20 serves as a processing space K1 in which the substrate G to be processed by plasma processing is positioned during plasma processing, and the space above the metal window 20 is a high frequency An antenna room K2 in which an antenna (plasma antenna) 90 is arranged.

A loading/unloading port 11 for loading/unloading the substrate G into/from the processing space K1 and a gate valve 12 for opening/closing the loading/unloading port 11 are provided on the side wall portion 10a on the X-direction negative side (left side in FIG. 2) of the container body 10. ing.

Further, as shown in FIG. 1, inside each side wall portion 10a and bottom wall portion 10b of the container body 10, a flow path 13 through which the temperature control medium flows is provided. The flow path 13 is used for controlling the temperature of the container body 10 and preventing reaction products from adhering to the inner peripheral surface of the container body 10 .

A mounting table 30 is provided on the bottom wall portion 10 b of the container body 10 so as to face the metal window 20 . The mounting table 30 has a table main body 31 whose upper surface serves as a mounting surface 31a on which the substrate G is mounted.

The table main body 31 is made of a conductive material (eg, aluminum, stainless steel, etc.) and has a rectangular shape in plan view. The surface of the base body 31 may be subjected to coating treatment such as anodizing treatment or ceramic spraying treatment in order to improve insulation and corrosion resistance.
The base body 31 is placed on the bottom wall portion 10b of the container body 10 via legs 32 made of an insulating material (eg, PTFE (polytetrafluoroethylene), alumina, yttria, etc.). Further, the substrate G placed on the table body 31 is attracted and held by an electrostatic chuck (not shown) of the table 30 .

Further, inside the base body 31, a channel 31b through which the temperature control medium flows is provided. The flow path 31b is used to adjust the temperature of the base body 31 and the temperature of the substrate G placed on the placement surface 31a.

A high-frequency power source 41 is connected to the table body 31 via a matching device 40 . The high-frequency power supply 41 supplies high-frequency power for bias, for example, high-frequency power with a frequency of 3.2 MHz to the base body 31 . Thereby, the ions in the plasma generated within the processing space K1 can be drawn into the substrate G. As shown in FIG.

A shield ring 50 is provided around the mounting table 30 as a ring member that surrounds the mounting surface 31a. The shield ring 50 is for the purpose of forming plasma uniformly above the mounting table 30, and is made of an insulating material (for example, ceramics such as alumina or yttria).

As shown in FIG. 2, the shield ring 50 is divided into, for example, four divided members 101 to 104, and is formed in a rectangular annular shape that is one size larger than the mounting surface 31a in plan view as a whole. In addition, as shown in FIG. 1, an insulating material (for example, PTFE (polytetrafluoroethylene)) is used to surround the side surface of the mounting table 30 (specifically, the lower side surface of the mounting table 30) and the side surface of the leg portion 32. , alumina, yttria, etc.) is provided, and a shield ring 50 is placed on the upper surface of the insulating ring 51 . The insulating ring 51 is supported by the bottom wall portion 10b of the container body 10 . That is, the shield ring 50 is installed on the bottom wall portion 10b of the container body 10 via the insulating ring 51 .

Inside the shield ring 50, a channel 50a through which the temperature control medium flows is provided. The flow path 50a is used for adjusting the temperature of the shield ring 50. As shown in FIG. In this example, the channel 50a is connected to the channel 13 provided inside the container body 10 so that the fluid can flow therethrough, as schematically shown by dotted lines in FIG. That is, in this example, the flow path 50 a of the shield ring 50 is circulated with the temperature control fluid for adjusting the temperature of the container body 10 .

In the illustrated example, the mounting surface 31a is smaller than the substrate G, and the peripheral edge of the substrate G protrudes from the mounting surface 31a and overlaps the inner peripheral portion of the shield ring 50 in plan view. The upper surface 50b of the inner peripheral portion of the shield ring 50 is positioned below the mounting surface 31a so as to be separated from the back surface of the substrate G and not to come into contact with it. The distance between the upper surface 50b of the inner peripheral portion of the shield ring 50 and the mounting surface 31a is, for example, 0.1 mm to 0.3 mm. In the portion where the base body 31 of the mounting table 30 and the shield ring 50 overlap in the vertical direction, the distance between the outer peripheral surface of the base body 31 of the mounting table 30 and the inner peripheral surface of the shield ring 50 is, for example, 0 mm to 0 mm. 0.1 mm.

Shield ring 50 may be integrated with insulating ring 51 . Alternatively, the insulating ring 51 and the leg portion 32 may be integrated.

A more specific configuration of the shield ring 50 will be described later.

Further, as shown in FIG. 1, the bottom wall portion 10b of the container body 10 is formed with an exhaust port 14. As shown in FIG. A plurality of exhaust ports 14 are provided. For example, as shown in FIG. 2, one is provided at the center of each long side of a mounting table 30 having a rectangular shape in plan view. As shown in FIG. 1, the exhaust port 14 is connected to an exhaust section 60 having a vacuum pump and the like. The processing space K<b>1 is decompressed by the exhaust section 60 . The exhaust part 60 may be provided in each of the plurality of exhaust ports 14 or may be provided in common to the plurality of exhaust ports 14 . Note that the positions and number of the exhaust ports 14 are not limited to the example shown in the drawing.

A baffle plate B (see FIG. 5) is provided in the processing container so as to cover the gap between the container body 10 and the mounting table 30 from above. The baffle plate B can separate a processing space (plasma processing space) K1 in which plasma is formed and a non-plasma processing space located below it in which plasma is not formed.

A metal frame 15, which is a rectangular frame made of a metal material such as aluminum, is provided on the upper surface of the side wall portion 10a of the container body 10. As shown in FIG. A sealing member 16 is provided between the container body 10 and the metal frame 15 to keep the processing space K1 airtight. Further, in this embodiment, the container body 10, the metal frame 15, and the metal window 20 constitute a processing container configured to be depressurized and in which substrates are processed. That is, the metal frame 15 and the metal window 20 constitute the top plate portion of the processing vessel.

The metal window 20 is formed, for example, in a rectangular shape in plan view. Also, the metal window 20 functions as a shower head that supplies the processing gas to the processing space K1. For example, the metal window 20 is formed with a large number of gas ejection holes 21 for ejecting the processing gas downward and diffusion chambers 22 for diffusing the processing gas. there is

The diffusion chamber 22 is connected to a processing gas supply section 71 via a gas supply pipe 70 . The processing gas supply unit 71 includes a flow control valve (not shown), an on-off valve (not shown), and the like, and supplies the diffusion chamber 22 with a processing gas necessary for etching, film formation, ashing, and the like.

Further, inside the metal window 20, a channel 23 through which the temperature control medium flows is provided. Channel 23 is used to adjust the temperature of metal window 20 . By adjusting the temperature of the metal window 20, the temperature of the processing gas supplied to the processing space K1 can be adjusted.
Note that the metal window 20 is electrically insulated from the metal frame 15 by an insulating member 24 .

A space surrounded by the metal window 20, the side wall portion 81, and the top plate portion 80 constitutes an antenna room K2, and a high-frequency antenna 90 is arranged inside the antenna room K2 so as to face the metal window 20. ing.

The high-frequency antenna 90 is spaced apart from the metal window 20 via a spacer (not shown) made of an insulating material, for example.

A high frequency power supply 43 is connected to the high frequency antenna 90 via a matching box 42 . High-frequency power of, for example, 13.56 MHz is supplied from the high-frequency power supply 43 to the high-frequency antenna 90 through the matching box 42 . As a result, an induced electric field is formed inside the processing space K1 during plasma processing, and the processing gas discharged from the gas discharge holes 21 is turned into plasma by the induced electric field.

Further, the plasma processing apparatus 1 is provided with a controller U. The control unit U is, for example, a computer having a processor such as a CPU and a memory, and has a program storage unit (not shown). A program for controlling the processing of the substrate G in the plasma processing apparatus 1 is stored in the program storage unit. The above-described program may be recorded in a non-temporary computer-readable storage medium and installed in the control unit U from the storage medium. Part or all of the program may be realized by dedicated hardware (circuit board).

<Shield ring 50>
4 is a cross-sectional view of the shield ring 50. FIG. FIG. 5 is a side view of the split member 101. FIG.
The shield ring 50 has four split members 101-104, as shown in FIG.
The divided members 101 to 104 are provided along each side of the rectangular mounting surface 31a of the mounting table 30 in plan view.

The division member 101 is provided so as to extend in the Y direction along the side of the placement surface 31a on the positive side in the X direction. A channel 101a is provided inside the dividing member 101 so as to extend along the Y direction. An introduction hole 101b for a temperature control fluid is provided at the Y-direction negative side end of the flow path 101a.
The dividing member 102 is provided so as to extend in the X direction along the side of the mounting surface 31a on the negative side in the Y direction. A channel 102a is provided inside the dividing member 102 so as to extend along the X direction.
The dividing member 103 is provided so as to extend in the Y direction along the side of the mounting surface 31a on the negative side in the X direction. A channel 103a is provided inside the dividing member 103 so as to extend along the Y direction. A temperature control fluid discharge hole 103b is provided at the Y-direction positive end of the flow path 103a.
The dividing member 104 is provided so as to extend in the X direction along the side of the placement surface 31a on the positive side in the Y direction. A channel 104a is provided inside the dividing member 104 so as to extend along the X direction.

The dividing member 101 and the dividing member 102 are fixed to each other so that the Y-direction negative end of the flow channel 101a and the X-direction positive end of the flow channel 102a communicate with each other.
The dividing member 102 and the dividing member 103 are fixed to each other so that the X-direction negative end of the channel 102a and the Y-direction negative end of the channel 103a communicate with each other.
The dividing member 103 and the dividing member 104 are fixed to each other so that the Y-direction positive side end of the flow path 103a and the X-direction negative side end of the dividing member 104 communicate with each other.
The dividing member 104 and the dividing member 101 are fixed to each other so that the X-direction positive end of the flow channel 104a and the Y-direction positive end of the flow channel 101a communicate with each other.

By fixing as described above, the temperature control fluid channel 50a of the shield ring 50 has the following two channels.
(1) Flow path from introduction hole 101b to discharge hole 103b via flow path 101a, flow path 104a, and the Y-direction positive end of flow path 103a (2) Flow path from introduction hole 101b to Y Flow path leading to discharge hole 103b via direction negative side end, flow path 102a and flow path 103a

The channels 101a to 104a, the introduction holes 101b, and the discharge holes 103b of the divided members 101 to 104 are formed by gun drilling, for example. In addition, the flow paths 101a to 104a of the divided members 101 to 104 are formed by joining a member having a recess forming one side of the flow paths 101a to 104a and a member having a recess forming the other side of the flow paths 101a to 104a. It may be formed by integrating with. Flow paths and the like may be formed by fabricating the divided members 101 to 104 by 3D printing technology.

In the shield ring 50, the division members 101 to 104 are fixed using a screw N (see FIG. 5) via a sealing member 110 such as an O-ring that seals the flow path 50a. The screw hole through which the screw N is inserted is formed so as to extend in the horizontal direction (X direction) so that the screw N is not exposed to the plasma processing space K1.

The Y-direction negative side end of the split member 101 is provided so as to protrude outward (Y-direction negative side) from the split member 102 . As shown in FIG. 5, the Y-direction negative side end of the divided member 102 protrudes outward (Y-direction negative side) from the insulating ring 51, and an introduction hole 101b for the temperature control fluid is provided on the lower side thereof. . The introduction hole 101b is connected via a connection pipe 120 to a chiller unit 200 (see FIG. 6 described later) outside the processing vessel. The temperature-controlled fluid from the chiller unit 200 is supplied to the introduction hole 101b through the bottom wall portion 10b of the container body 10 and the connecting pipe 120. As shown in FIG.

As shown in FIG. 4 , the Y-direction positive side end of the divided member 103 , which is located diagonally opposite the Y-direction negative side end of the divided member 101 , is located outside (Y-direction positive side) of the divided member 104 . provided to protrude. Although illustration is omitted, the Y-direction positive side end of the split member 103 protrudes outward (Y-direction positive side) from the insulating ring 51 , similarly to the Y-direction negative side end of the split member 101 . A discharge hole 103b for the temperature control fluid is provided on the side. Similarly to the introduction hole 101b, the discharge hole 103b is also connected to a chiller unit 200 (see FIG. 6, which will be described later) outside the processing container via a connection pipe (not shown). The temperature-controlled fluid discharged from the discharge hole 103b is returned to the chiller unit 200 via the connecting pipe and the bottom wall portion 10b of the container body 10. As shown in FIG.

The Y-direction positive side end of the split member 101 is also outside (Y-direction positive side) the split member 104 and the insulating ring 51 , and the Y-direction negative side end of the split member 103 is also outside the split member 102 and the insulating ring 51 . They are provided so as to protrude further outward (negative side in the Y direction). However, the end of the divided member 101 on the positive side in the Y direction and the end of the divided member 103 on the negative side in the Y direction are not provided with the introduction hole 101b and the discharge hole 103b.

In this way, the end portions where the introduction hole 101b and the discharge hole 103b are not provided also protrude outward from the divided members 102 and 104 and the insulating ring 51, so that the shape of the shield ring 50 as a whole in a plan view is It is symmetrical with respect to the X direction centering on the center of the X direction, and symmetrical with respect to the Y direction centering on the center of the Y direction. Therefore, when the portion of the shield ring 50 outside the insulating ring 51 is asymmetrical, it is possible to suppress the influence on the plasma in the plasma processing space K1.

Incidentally, the connecting pipe 120 connected to the introduction hole 101b is located in the space below the baffle plate B, that is, in the non-plasma formation space, as shown in FIG. The same applies to a connection pipe (not shown) connected to the discharge hole 103b. Therefore, these connection pipes do not adversely affect the plasma within the plasma processing space K1.

<Temperature Control Fluid Supply System>
FIG. 6 is a schematic diagram showing the configuration of a temperature control fluid supply system in the plasma processing apparatus 1. As shown in FIG.

As shown in FIG. 6, the plasma processing apparatus 1 includes a flow path 13 in the container body 10, a flow path 31b in the mounting table 30, and a metal window functioning as a shower head (hereinafter, sometimes referred to as a shower head). ) 20 has a channel 23 .

The flow path 13, the flow path 31b, and the flow path 23 are each connected to a chiller unit 200 provided outside the processing container via pipes (not shown), and temperature control fluids are individually circulated and supplied. The temperature control fluid is, for example, a fluorine-based fluid.
The temperature and flow rate of the temperature-controlled fluid circulated and supplied from the chiller unit 200 to the flow path 13, the flow path 31b, and the flow path 23 are controlled by the controller U (see FIG. 1). Further, the temperature control fluid circulated and supplied to the flow path 13 from the chiller unit 200, the temperature control fluid circulated and supplied to the flow path 31b, and the temperature control fluid circulated and supplied to the flow path 23 are independently temperature controlled. be done. The chiller unit 200 may be provided commonly to the flow path 13, the flow path 31b, and the flow path 23, or may be provided individually.

Further, as described above, the flow path 13 is connected to the flow path 50a provided in the shield ring 50 so that the fluid can flow therethrough. For example, the flow path 13 and the flow path 50a are connected in series so that the fluid can flow therethrough, forming one temperature control fluid circulation path. That is, the flow path 50 a of the shield ring 50 is circulated with the temperature control fluid for the flow path 13 of the container body 10 .

<Substrate processing>
Next, substrate processing in the plasma processing apparatus 1 will be described.
First, the gate valve 12 is opened, and the substrate G is loaded into the processing container through the loading/unloading port 11 and placed on the mounting table 30 . After that, the gate valve 12 is closed.

Subsequently, the processing gas is supplied from the processing gas supply unit 71 through the metal window 20 into the processing space K1. Further, the processing space K1 is evacuated by the exhaust unit 60, and the inside of the processing space K1 is adjusted to a desired pressure.

Next, high-frequency power is supplied from the high-frequency power supply 43 to the high-frequency antenna 90, thereby generating an induced electric field through the metal window 20 within the processing space K1. As a result, the induced electric field turns the processing gas in the processing space K1 into plasma, generating high-density inductively coupled plasma. Ions in the plasma are attracted to the substrate G by the high-frequency power for bias supplied from the high-frequency power supply 41 to the table main body 31 of the mounting table 30, and the substrate G is processed.

After the plasma processing is completed, the power supply from the high-frequency power sources 41 and 43 and the processing gas supply from the processing gas supply unit 71 are stopped, and the substrate G is unloaded in the reverse order of loading.
This completes a series of substrate processing.

(Case 1)
For example, when the above substrate processing in the plasma processing apparatus 1 is etching of a molybdenum film on the substrate G, etc., the table body 31 of the mounting table 30 and the container body 10 of the processing container form the flow paths 31b and 13, respectively. A high temperature of 80° C. or higher is adjusted as follows by the temperature control fluid that circulates.
Base body 31 of mounting base 30: 80° C. to 110° C.
Container body 10 of processing container: 110°C to 150°C

In this case, in the present embodiment, since the temperature control fluid for the flow path 13 of the container body 10 is also circulated through the flow path 50a of the shield ring 50, the shield ring 50 is also heated to a high temperature of 80° C. or higher, for example. .

On the other hand, unlike the present embodiment, when the shield ring 50 is not provided with the flow path 50a, the shield ring 50 is heated by heat input from the plasma or the like. The temperature of the shield ring 50 is low immediately after the start of processing. Therefore, a large amount of the reaction product adheres to the upper surface of the shield ring 50 .

In contrast, as in the present embodiment, by heating the shield ring 50 with the temperature control fluid circulating through the flow path 50a, the temperature of the shield ring 50 can be increased even immediately after idling. Therefore, the amount of reaction products adhering to the upper surface 50b of the shield ring 50 can be suppressed. Therefore, it is possible to prevent the surface of the substrate and the inside of the processing container from being contaminated by the reaction product scattering when the substrate G is replaced.
Further, if the reaction product adheres to the inner peripheral side of the upper surface 50b of the shield ring 50, if the distance in the vertical direction between the upper surface 50b of the shield ring 50 and the mounting surface 31a is short, the mounting surface of the substrate G may be damaged. Placement on the substrate 31a and adsorption of the substrate G to the substrate 30 may be blocked. In the present embodiment, adhesion of the reaction product to the upper surface 50b of the shield ring 50 is suppressed, so that it is possible to suppress the above-described placement failure and adsorption failure.

(Case 2)
For example, when the above-described substrate processing in the plasma processing apparatus 1 is etching of an oxide film (for example, a silicon oxide film) on the substrate G, the table body 31 of the mounting table 30 has a temperature control fluid circulating through the flow path 31b. is adjusted to a low temperature of 40.degree.
Base body 31 of mounting base 30: 0° C. to 40° C.
Container body of processing container 10: 80 ° C to 110 ° C

In this case, in the present embodiment, since the temperature control fluid for the flow path 13 of the container body 10 is also circulated through the flow path 50a of the shield ring 50, the shield ring 50 is also heated to a high temperature of 80° C. or higher, for example. .

On the other hand, unlike the present embodiment, when the shield ring 50 is not provided with the flow path 50a, the shield ring 50 is heated by heat input from the plasma or the like, but the influence of the table main body 31 of the low-temperature mounting table 30 is avoided. As a result, the temperature of the shield ring 50 becomes a temperature substantially intermediate between the temperature of the table main body 31 of the mounting table 30 and the temperature of the container main body 10 of the processing container. In particular, the temperature on the inner peripheral side of the shield ring 50 becomes lower. Therefore, a large amount of the reaction product adheres to the upper surface 50b of the shield ring 50 (particularly its inner peripheral side).

In contrast, as in the present embodiment, the temperature of the shield ring 50 can be made equal to the temperature of the container body 10 of the processing container by heating the shield ring 50 with the temperature control fluid circulating through the flow path 50a. can. That is, the shield ring 50 can be heated to a high temperature. Therefore, the amount of reaction products adhering to the upper surface 50b of the shield ring 50 can be suppressed.

(Case 3)
For example, when the above-described substrate processing in the plasma processing apparatus 1 is etching of an amorphous silicon film on the substrate G, etc., the base body 31 of the mounting table 30 and the container body 10 of the processing container are formed into flow paths 31b and 13, respectively. is adjusted to an intermediate temperature as follows by the temperature control fluid that circulates through.
Base body 31 of mounting base 30: 40° C. to 60° C.
Container body of processing container 10: 40 ° C to 60 ° C

In this case, unlike the present embodiment, if the shield ring 50 is not provided with the flow path 50a, the shield ring 50 will be heated to a high temperature by heat input from the plasma or the like. As a result, the temperature of the shield ring 50 hardens the photoresist film as an etching mask in the portion of the substrate G placed on the table main body 31 of the table 30, ie, the peripheral portion, on the shield ring 50 side. Sometimes. If the photoresist film is cured in this way, it may not be possible to properly remove the photoresist film even if removal treatment such as ashing is performed thereafter. Also, in the peripheral portion of the substrate G, the etching selectivity may fluctuate due to the influence of the temperature of the shield ring 50 .

On the other hand, when the temperature control fluid for the channel 13 of the container body 10 circulates through the channel 50a of the shield ring 50 as in the present embodiment, the temperature of the shield ring 50 is adjusted to the temperature of the table body 31 of the mounting table 30. The temperature can be made substantially equal to the temperature of the container body 10 of the processing container. Therefore, hardening of the photoresist film in the peripheral portion of the substrate G can be suppressed, and variation in the etching selectivity can be suppressed, so that stable processing results can be obtained.

<Another Example 1 of Temperature Control Fluid Supply System>
FIG. 7 is a schematic diagram showing another configuration example of the temperature control fluid supply system in the plasma processing apparatus 1. As shown in FIG.

In the example of FIG. 6, the channel 13 provided in the container body 10 of the processing container, that is, the side wall portion 10a and the bottom wall portion 10b, and the channel 50a provided in the shield ring 50 are connected so that the fluid can flow. was On the other hand, in the example of FIG. 7, the shower head 20, that is, the channel 23 provided in the ceiling wall portion of the processing container and the channel 50a provided in the shield ring 50 are connected so that the fluid can flow. . For example, the flow path 23 and the flow path 50a are connected in series so that the fluid can flow therethrough, forming one circulation path for the temperature control fluid. That is, the flow path 50a of the shield ring 50 is circulated and supplied with the temperature control fluid for the flow path 23 of the shower head 20 .

Also in the case of the supply system of this example, the temperature control fluid is supplied from the chiller unit 200 to the flow path 50a of the shield ring 50 as described with reference to FIG. , through the connection tube 120 and the introduction hole 101b.

<Case 4>
Depending on the type of substrate processing, the container main body 10 and the shower head 20 of the processing container are adjusted to the following temperatures by temperature control fluids circulating through the channels 13 and 23, respectively. The temperature is higher than that of the main body 10 .
Container body of processing container 10: 80 ° C to 110 ° C
Shower head 20: 150°C or higher

In this case, the shield ring 50 can also be heated to a higher temperature than the container body 10 by circulating the temperature control fluid to the flow path 23 of the shower head 20 also in the flow path 50a of the shield ring 50 as in this example. can be done.
This example is suitable when the temperature of the shield ring 50 is the same as that of the container body 10 of the processing container, but the adhesion of reaction products to the shield ring 50 is not sufficiently suppressed.

<Another Example 2 of Temperature Control Fluid Supply System>
FIG. 8 is a schematic diagram showing another configuration example of the temperature control fluid supply system in the plasma processing apparatus 1. As shown in FIG.

In the examples of FIGS. 6 and 7, the walls of the processing container, such as the container body 10 and the shower head 20, and the channel 50a provided in the shield ring 50 are connected so that the fluid can flow. On the other hand, in the example of FIG. 8, the channel 31b provided in the mounting table 30 and the channel 50a provided in the shield ring 50 are connected so that the fluid can flow. For example, the flow path 31b and the flow path 50a are connected in series so that the fluid can flow therethrough, forming one temperature control fluid circulation path. That is, the flow path 50 a of the shield ring 50 is circulated and supplied with the temperature control fluid for the flow path 31 b of the mounting table 30 .

Also in the case of the supply system of this example, the temperature control fluid is supplied from the chiller unit 200 to the flow path 50a of the shield ring 50 as described with reference to FIG. , through the connection tube 120 and the introduction hole 101b.

(Case 5)
For example, when the above-described substrate processing in the plasma processing apparatus 1 is etching of a silicon oxide film, etc., which requires a particularly high selectivity, the table body 31 of the mounting table 30 has a temperature control fluid circulating through the flow path 31b. As described below, the temperature of the container body 10 of the processing container is adjusted to a temperature lower than that of the case 2, and the temperature control fluid circulating through the flow path 13 adjusts the temperature to a temperature of 80° C. or higher.
Base body 31 of mounting base 30: -10°C to 0°C
Container body of processing container 10: 80 ° C to 110 ° C

In this case, in this example, the flow path 50a of the shield ring 50 also circulates the temperature control fluid to the flow path 31b of the mounting table 30, so that the shield ring 50 is also cooled. The temperature becomes as low as that of the base body 31).

On the other hand, unlike the present embodiment, when the shield ring 50 is not provided with the flow path 50 a , the shield ring 50 is heated by heat input from the plasma, etc., and becomes hotter than the table main body 31 . Then, the peripheral portion of the substrate G on the table body 31 is affected by the high-temperature shield ring 50 and becomes hotter than the central portion, making it impossible to etch with an appropriate selectivity. . That is, the result of etching becomes non-uniform within the plane of the substrate G.

On the other hand, as in this example, the shield ring 50 is adjusted to a low temperature by the temperature control fluid circulating through the flow path 50a and cooled to the same temperature as the base body 31, so that the substrate G on the base body 31 is cooled. Since there is no temperature difference between the peripheral portion and the central portion of the substrate G, the entire surface of the substrate G can be etched with an appropriate selectivity. That is, according to this example, a uniform etching result can be obtained in the plane of the substrate G. FIG.

<Main effects of the present embodiment>
As described above, in the present embodiment, the flow path (specifically, flow path 13, flow path 23 or flow path 31b) provided inside the constituent members of the plasma processing apparatus 1 other than the shield ring 50 or one) and the flow path 50a provided inside the shield ring 50 are connected so that the fluid can flow therethrough. Therefore, problems caused by the temperature of the shield ring 50 (specifically, adhesion of reaction products to the shield ring 50 and non-uniform etching results within the surface of the substrate G) are suppressed. be able to. In addition, since it is possible to suppress adhesion of reaction products to the shield ring 50, it is possible to lengthen the execution cycle of maintenance for removing the reaction products from the shield ring 50. As a result, production efficiency associated with maintenance can be increased. Decrease can be suppressed.

Further, in the present embodiment, the temperature-controlled fluid supplied to the flow path 50 a of the shield ring 50 is the temperature-controlled fluid supplied to the flow paths of the constituent members of the plasma processing apparatus 1 other than the shield ring 50 . Therefore, since the temperature control fluid piping and the like for the flow path 50a of the shield ring 50 can be shared with the temperature control fluid piping and the like for the other flow paths, the temperature control fluid supply system can be simplified and the cost can be prevented from increasing. can be done.

<Another example of the shield ring 50>
FIG. 9 is a diagram for explaining another example of the shield ring, showing a split member 301 that constitutes the shield ring of this example. The division member 301 is provided along each side of the rectangular mounting surface 31a of the mounting table 30 in plan view, and constitutes a shield ring 300 having a rectangular frame shape. The split members 301 forming the long sides of the shield ring 300 are formed longer than the split members 301 forming the short sides.
In the shield ring 50 of the example shown in FIG. 4 and the like, one shield ring 50 is provided with the introduction hole 101b and the discharge hole 103b for the temperature control fluid. On the other hand, in the example of FIG. 9, each of the four divided members 301 forming the shield ring 300 is provided with one introduction hole 302 and one discharge hole 303 for the temperature control fluid. By adopting such a configuration, it is possible to suppress the temperature change amount of the temperature control fluid while passing through the flow path 304 of the shield ring 300, and it is possible to adjust the shield ring 300 to a desired temperature.
If the substrate G to be processed is large and the shield ring 300 is large, there is a high possibility that the above-described temperature change amount will be large.

A division member 301 in FIG. 9 has a flow path 304 for a temperature control fluid formed in an annular shape when viewed from above. The divided member 301 has a convex portion 301a projecting to the opposite side (right side in the drawing) of the mounting table 30, and an introduction hole 302 and a discharge hole 303 are provided on the lower surface of the convex portion 301a. The introduction hole 302 and the discharge hole 303 are connected to portions of the channel 304 opposite to the mounting table 30 (right side in the drawing).

The convex portion 301a is provided, for example, in the central portion of the split member 301 in the direction in which the split member 301 extends (vertical direction in the drawing), depending on the position where the exhaust port 14 is formed.

<Other embodiments>
FIG. 10 is a partially enlarged top view of the interior of the processing container according to another embodiment. FIG. 11 is a partially enlarged cross-sectional view of the periphery of a shield ring 50 according to another embodiment.
In the plasma processing apparatus according to the present disclosure, as shown in FIGS. 10 and 11 , a rectifying wall 400 annular in plan view surrounding the mounting surface 31 a of the table body 31 of the mounting table 30 is separate from the shield ring 50 . It is detachably provided on the shield ring 50 . If the rectifying wall 400 is not provided, the reaction product, which is a factor that inhibits etching, is more likely to be discharged from the periphery of the substrate G than from the center. In some cases, it is higher than in the central part. As in the present embodiment, the rectifying wall 400 is provided and the flow of the etching gas near the peripheral edge of the substrate G is interrupted by the rectifying wall 400 to form a gas pool around the substrate G, and the etching gas in the vicinity of the peripheral edge is It is possible to reduce the flow velocity and prevent the etching rate from becoming non-uniform within the substrate surface.

The rectifying wall 400 is formed using an insulating material such as alumina, for example. Alternatively, the straightening wall 400 may be formed using a metal material such as stainless steel, and the outside thereof may be covered with an insulator.
The straightening wall 400 is, for example, divided into four divided members 401 to 404 like the shield ring 50 . The split member 401 is provided on the split member 101 so as to extend along the split member 101 . The split member 402 is provided on the split member 102 so as to extend along the split member 102 . The split member 403 is provided on the split member 103 so as to extend along the split member 103 . The split member 404 is provided on the split member 104 so as to extend along the split member 104 .

Each of the dividing members 401 to 404 of the straightening wall 400 has a vertically extending wall portion 400a at its inner peripheral end, and a collar portion 400b extending outward from the lower end of the wall portion 400a.

When the rectifying wall 400 and the shield ring 50 are configured separately as in this example, the shield ring 50 and the rectifying wall 400 are fixed so as to improve heat conduction therebetween. This fixation is performed, for example, by fastening the collar portion 400b and the shield ring 50 using screws (not shown) arranged at intervals of 50 mm to 150 mm along the collar portion 400b. By fixing with screws in this way, heat can be transferred between the shield ring 50 and the rectifying wall 400 via the screws. Therefore, the rectifying wall 400 has substantially the same temperature as the shield ring 50 . That is, by controlling the temperature of the shield ring 50, the temperature of the rectifying wall 400 can be controlled. Therefore, it is possible to suppress the occurrence of problems caused by the temperature of the rectifying wall 400 (specifically, adhesion of reaction products to the rectifying wall 400, etc.).

Moreover, as shown in FIG. 11, it is preferable that a gap H of about 1 mm to 10 mm exists between the straightening wall 400 and the shield ring 50 . This is because the reaction product is discharged through the gap H, so that it is possible to prevent the reaction product from accumulating on the straightening wall 400 and causing particles.

For example, a spacer such as a washer is interposed between the rectifying wall 400 and the shield ring 50, and the rectifying wall 400 and the shield ring 50 are fixed with screws as described above to form a gap between them. It can be fixed in place.

The screws for fixing the straightening wall 400 and the shield ring 50 are also used so as not to be exposed to the plasma processing space K1, like the screws N described above.

<Other examples of shield ring and rectifying wall>
FIG. 12 is a diagram showing another example of the shield ring and rectifying wall.
In the examples of FIGS. 10 and 11, the shield ring and the straightening wall are separate bodies, but they may be integrated. By integrating them, heat can be effectively transferred from the shield ring portion to the rectifying wall portion. However, by providing a separate unit, it is possible to perform maintenance only on the rectifying wall to which a larger amount of reaction product adheres, thus facilitating maintenance. When the rectifying wall to which the reaction product adheres is discarded and replaced with a new rectifying wall, cost can be reduced by using a separate unit.

A shield ring 600 in the example of FIG. 12 has a shield ring portion 601 corresponding to the shield ring 50 in FIG. 10 and the like, and a rectifying wall portion 602 corresponding to the rectifying wall 400 in FIG. 10 and the like.
In this example, a through hole corresponding to the gap H in the example of FIG.

<Modification>
In the above examples, plasma processing was performed as substrate processing, but the technique according to the present disclosure can also be applied to processing that does not use plasma.
Further, in the above examples, etching processing is performed as substrate processing, but the technology according to the present disclosure can also be applied to substrate processing other than etching (for example, film formation processing).

It should be considered that the embodiments disclosed this time are illustrative in all respects and not restrictive. The embodiments described above may be omitted, substituted, or modified in various ways without departing from the scope and spirit of the appended claims.

1 Plasma processing apparatus 10a Side wall 10b Bottom wall 13 Channel 20 Metal window 23 Channel 30 Mounting table 31a Mounting surface 31b Channels 50, 300, 600 Shield rings 50a, 304 Channel G Glass substrate

Claims (18)

A substrate processing apparatus for processing a substrate,
a processing chamber in which the substrate is processed;
a chamber wall that constitutes the processing chamber;
a mounting table installed inside the processing chamber and having a mounting surface on which the substrate is mounted;
a ring member arranged to surround the outer circumference of the mounting surface;
a first flow path provided inside a constituent member of the substrate processing apparatus other than the ring member, through which a temperature control medium flows;
A substrate processing apparatus provided inside the ring member, comprising: the first flow path; and a second flow path connected in a fluid-flowable manner. a chamber-side flow path provided inside the chamber wall and through which a first temperature control medium flows;
2. The substrate processing apparatus according to claim 1, further comprising a mounting table side flow path provided inside said mounting table and through which a second temperature control medium flows. the first flow path is the chamber-side flow path,
3. The substrate processing apparatus according to claim 2, wherein said chamber wall portion provided with said chamber-side channel is at least one of a side wall portion and a bottom wall portion. the first flow path is the chamber-side flow path,
3. The substrate processing apparatus according to claim 2, wherein said chamber wall portion provided with said chamber-side channel is a top plate portion. 3. The substrate processing apparatus according to claim 2, wherein said first channel is said mounting table side channel. 6. The substrate processing apparatus according to claim 2, wherein said first temperature control medium and said second temperature control medium are independently temperature controlled. 7. The substrate processing apparatus according to claim 6, wherein said first temperature control medium is temperature-controlled to a higher temperature than said second temperature control medium. 8. The substrate processing apparatus according to claim 1, wherein an annular rectifying wall surrounding said mounting surface is arranged on the upper surface of said ring member. 8. The substrate processing apparatus according to claim 1, wherein said ring member is integrally formed with an annular straightening wall surrounding said mounting surface. 10. The substrate processing apparatus according to claim 1, wherein at least an inner peripheral portion of said ring member has an upper surface located below said mounting surface. A method of processing a substrate with a substrate processing apparatus, comprising:
The substrate processing apparatus is
a processing chamber in which the substrate is processed;
a chamber wall that constitutes the processing chamber;
a mounting table installed inside the processing chamber and having a mounting surface on which the substrate is mounted;
a ring member arranged to surround the outer circumference of the mounting surface;
a first flow path provided inside a constituent member of the substrate processing apparatus other than the ring member, through which a temperature control medium flows;
The temperature control medium is circulated through the second flow path provided inside the ring member and connected to the first flow path and a fluid to be circulated therethrough. , a substrate processing method for processing the substrate. The substrate processing apparatus is
a chamber-side flow path provided inside the chamber wall and through which a first temperature control medium flows;
12. The substrate processing method according to claim 11, further comprising a mounting table side flow path provided inside said mounting table and through which a second temperature control medium flows. the first flow path is the chamber-side flow path,
13. The substrate processing method according to claim 12, wherein said chamber wall portion provided with said chamber-side channel is at least one of a side wall portion and a bottom wall portion. the first flow path is the chamber-side flow path,
13. The substrate processing method according to claim 12, wherein said chamber wall portion provided with said chamber-side channel is a top plate portion. 15. The substrate processing method according to claim 13, wherein said first temperature control medium is circulated in said second flow path to heat said ring member. 15. The substrate processing method according to claim 13, wherein said first temperature control medium is circulated through said second flow path to cool said ring member. 13. The substrate processing method according to claim 12, wherein said first channel is said mounting table side channel. 17. The substrate processing method according to claim 16, wherein said second temperature control medium is circulated in said first flow path to cool said ring member.

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