TW201937590A - Substrate processing apparatus and temperature control method capable of suppressing surface deposits of the shower plate and increasing erosion resistance of the base member - Google Patents
Substrate processing apparatus and temperature control method capable of suppressing surface deposits of the shower plate and increasing erosion resistance of the base member Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
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- H—ELECTRICITY
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- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
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- H01J37/32—Gas-filled discharge tubes
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- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
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- H—ELECTRICITY
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- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
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- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
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Abstract
Description
本發明之各種態樣及實施形態，係關於基板處理裝置及溫度控制方法者。Various aspects and embodiments of the present invention relate to a substrate processing apparatus and a temperature control method.
從以往已知一種基板處理裝置，其係對被配置於處理容器內之玻璃基板等的基板供給處理氣體，進行蝕刻處理等的基板處理。作為像這樣的基板處理裝置，係例如已知電漿處理裝置。電漿處理裝置，係使處理氣體從被配置成與基板對向的噴頭噴出，並施加高頻電力而使處理氣體電漿化，藉此，進行蝕刻處理。Conventionally, there is known a substrate processing apparatus which supplies a processing gas to a substrate such as a glass substrate arranged in a processing container and performs substrate processing such as etching processing. As such a substrate processing apparatus, a plasma processing apparatus is known, for example. The plasma processing apparatus performs an etching process by ejecting a processing gas from a shower head arranged to face the substrate, and applying high-frequency power to plasmatize the processing gas.
然而，電漿處理裝置，係當在蝕刻處理等中，於噴頭之表面產生沈積物時，則成為微粒的發生源。因此，已知一種將噴頭設成為高溫以避免產生沈積物的技術。例如，在專利文獻1中，係提出一種如下述之構成：將噴頭設成為接合了形成有氣體擴散空間之基座構件與形成有用以使處理氣體噴出的複數個氣孔之噴淋板的構成，並在基座構件形成冷卻器流路以進行噴頭之溫度控制。
[先前技術文獻]
[專利文獻]However, the plasma processing apparatus is a source of particles when a deposit is generated on the surface of a shower head in an etching process or the like. Therefore, a technique is known in which the shower head is set to a high temperature to avoid the generation of deposits. For example, Patent Document 1 proposes a configuration in which a shower head is configured to join a base member formed with a gas diffusion space and a shower plate formed with a plurality of air holes for ejecting a processing gas. A cooler flow path is formed in the base member for temperature control of the shower head.
[Prior technical literature]
[Patent Literature]
[專利文獻1]日本特開2008-177428號公報[Patent Document 1] Japanese Patent Laid-Open No. 2008-177428
[本發明所欲解決之課題][Problems to be Solved by the Invention]
然而，專利文獻1所記載之構造，係由於在基座構件與噴淋板之間具有氣體擴散空間，因此，在噴淋板表面之溫度控制方面並不充分。又，在如避免產生沈積物般之整體設成為高溫的情況下，係存在噴頭整體成為高溫且膨脹而發生不良狀況的情形。例如，在噴頭整體膨脹的情況下，保持噴頭之保持構件的密封有無法維持真空的情形。又，在蝕刻金屬膜的情況下，係將氯等的鹵素系氣體作為處理氣體而進行電漿處理。在該情況下，由鋁等所構成之基座構件，係為了對鹵素系氣體提升耐腐蝕性，從而施予耐酸鋁處理。在蝕刻金屬膜的情況下，雖亦可藉由將噴淋板設成為高溫的方式，抑制沈積物，但當基座構件之耐酸鋁成為高溫時，則會產生裂縫且耐腐蝕性顯著下降。因此，在金屬膜蝕刻中，難以兼顧對噴淋板表面之沈積物的抑制與基座構件的耐腐蝕性。
[用以解決課題之手段]However, the structure described in Patent Document 1 has a gas diffusion space between the base member and the shower plate, and therefore, the temperature control of the surface of the shower plate is insufficient. In addition, when the whole is set to a high temperature, such as to avoid the generation of deposits, there is a case where the entire head becomes high temperature and expands to cause a problem. For example, when the nozzle head is expanded as a whole, the sealing member holding the nozzle may not be able to maintain a vacuum. In the case of etching a metal film, a plasma treatment is performed using a halogen-based gas such as chlorine as a processing gas. In this case, the base member made of aluminum or the like is subjected to an alumite treatment in order to improve the corrosion resistance of the halogen-based gas. In the case of etching a metal film, although it is possible to suppress the deposition by setting the shower plate to a high temperature, when the acid-resistant aluminum of the base member becomes a high temperature, cracks occur and the corrosion resistance is significantly reduced. Therefore, it is difficult to balance the suppression of deposits on the surface of the shower plate and the corrosion resistance of the base member in the etching of the metal film.
[Means to solve the problem]
所揭示之基板處理裝置，係在一個實施態樣中，具有：噴頭，與載置基板之載置台對向，且被配置於處理容器內並噴出處理氣體。噴頭，係具有：噴淋板，與載置台對向配置，形成有將處理氣體噴出至處理容器內的複數個氣孔，並設置有加熱裝置；及基座構件，被接合於噴淋板之與載置台對向之對向面的背面側，形成有用以將處理氣體供給至前述複數個氣孔的空間，並設置有溫度調整裝置。
[發明之效果]The disclosed substrate processing apparatus is, in one embodiment, provided with a shower head opposed to a mounting table on which the substrate is mounted, and disposed in a processing container and ejecting a processing gas. The shower head includes: a shower plate, which is disposed opposite to the mounting table, has a plurality of air holes for spraying the processing gas into the processing container, and is provided with a heating device; and a base member connected to the shower plate and The back side of the opposing surface of the mounting table is formed with a space for supplying the processing gas to the plurality of air holes, and a temperature adjustment device is provided.
[Effect of the invention]
根據所揭示之基板處理裝置的1個態樣，達到可分別對噴淋板與基座構件進行溫度控制這樣的效果。According to one aspect of the disclosed substrate processing apparatus, the effect that the temperature of the shower plate and the base member can be controlled separately is achieved.
以下，參閱圖面，詳細說明關於本申請案所揭示之基板處理裝置及溫度控制方法的實施形態。另外，在各圖面中，對於相同或相當的部分，係附上相同的符號。又，並非藉由本實施形態來限定所揭示的發明。各實施形態，係可在處理內容不相矛盾的範圍下，適當地進行組合。Hereinafter, embodiments of the substrate processing apparatus and the temperature control method disclosed in the present application will be described in detail with reference to the drawings. In each drawing, the same or equivalent parts are denoted by the same symbols. The disclosed invention is not limited by the embodiments. Each embodiment can be appropriately combined within a range in which the processing contents do not contradict each other.
(第1實施形態)
[基板處理裝置之構成]
說明關於實施形態之基板處理裝置10的構成。圖1，係概略地表示實施形態之基板處理裝置的圖。基板處理裝置10，係對基板進行預定之基板處理的裝置。在本實施形態中，係以將基板處理裝置10設成為對基板進行電漿蝕刻之電漿處理裝置的情形為例而進行說明。以下，針對基板處理裝置10，圖示說明主要與本發明關連之部分的構成。在圖1中，係概略地表示基板處理裝置10之縱剖面的構造。(First Embodiment)
[Configuration of substrate processing apparatus]
The configuration of the substrate processing apparatus 10 according to the embodiment will be described. FIG. 1 is a diagram schematically showing a substrate processing apparatus according to the embodiment. The substrate processing apparatus 10 is a device that performs a predetermined substrate processing on a substrate. In this embodiment, the case where the substrate processing apparatus 10 is set as the plasma processing apparatus which plasma-etches a board | substrate is demonstrated as an example. Hereinafter, the substrate processing apparatus 10 is schematically illustrated as a configuration of a part mainly related to the present invention. FIG. 1 schematically illustrates a vertical cross-sectional structure of the substrate processing apparatus 10.
基板處理裝置10，係具備有用以在其內部對基板S施予蝕刻處理之角筒形狀的處理容器20。該基板S，係例如FPD(Flat Panel Display)等所使用之角型的玻璃基板。例如，基板S，係在第10世代之基板尺寸的情況下，被形成為一邊為2,880mm而另一邊為3,080mm左右之大小的矩形狀。因此，基板處理裝置10，係對應於基板S之尺寸而被大型化。處理容器20，係具備有：容器本體21，平面形狀被構成為矩形狀，頂部呈開口；及上蓋22，被設成為堵塞該容器本體21之頂棚開口部。容器本體21及上蓋22，係藉由鋁或不鏽鋼等的金屬所構成，並分別接地。The substrate processing apparatus 10 is provided with a processing container 20 having a rectangular tube shape for applying an etching treatment to the substrate S inside the substrate processing apparatus 10. The substrate S is an angular glass substrate used in, for example, FPD (Flat Panel Display). For example, the substrate S is formed in a rectangular shape having a size of about 2,880 mm on one side and a size of about 3,080 mm on the other side in the case of the substrate size of the 10th generation. Therefore, the substrate processing apparatus 10 is enlarged in accordance with the size of the substrate S. The processing container 20 includes a container body 21 having a rectangular shape in a planar shape and an opening at the top, and an upper cover 22 provided to block a ceiling opening of the container body 21. The container body 21 and the upper lid 22 are made of metal such as aluminum or stainless steel, and are grounded.
在容器本體21內之下部，係設置有用以載置基板S的載置台30。載置台30，係經由配置於容器本體21內之底部的支撐部31被水平支撐。載置台30，係藉由鋁或不鏽鋼等的金屬所構成，藉由未圖示之高頻電力供給構件來供給高頻電力，並對基板S施加偏壓電力進行預定的電漿處理。A mounting table 30 for mounting the substrate S is provided in the lower portion of the container body 21. The mounting table 30 is supported horizontally via a support portion 31 disposed at the bottom of the container body 21. The mounting table 30 is formed of a metal such as aluminum or stainless steel, and supplies high-frequency power by a high-frequency power supply member (not shown), and applies a bias power to the substrate S to perform a predetermined plasma treatment.
又，在容器本體21之側壁下部，係經由排氣路徑32例如連接有由真空泵等所構成的真空排氣裝置。真空排氣裝置，係被構成為藉由接收來自後述之控制部90之控制信號的方式，真空排氣裝置依照其信號，對處理容器20內進行真空排氣，且處理容器20內被維持為所期望的真空度。A vacuum evacuation device including a vacuum pump or the like is connected to the lower portion of the side wall of the container body 21 via an exhaust path 32, for example. The vacuum evacuation device is configured to receive a control signal from a control unit 90 described later, and the vacuum evacuation device evacuates the inside of the processing container 20 in accordance with the signal, and the inside of the processing container 20 is maintained as The desired degree of vacuum.
又，在處理容器20之載置台30的上方，係設置有用以將處理氣體供給至基板S的噴頭40。A shower head 40 for supplying a processing gas to the substrate S is provided above the mounting table 30 of the processing container 20.
噴頭40，係具備有：噴淋板41，被設置成與載置台30對向；及基座構件42，支撐噴淋板41。The shower head 40 includes a shower plate 41 provided so as to face the mounting table 30, and a base member 42 that supports the shower plate 41.
噴淋板41，係形成有：複數個氣孔43，與基板S對向配置，並將處理氣體噴出至處理容器20內。The shower plate 41 is formed with a plurality of air holes 43 and is arranged to face the substrate S, and sprays the processing gas into the processing container 20.
圖2A，係表示第1實施形態之噴淋板之下面側的平面圖。圖2B，係表示第1實施形態之噴淋板之剖面的剖面圖。圖2B，係表示圖2A之A-A線之位置的剖面。如圖2A所示般，噴淋板41，係被形成為角板狀，在中央部分41a沿厚度方向貫穿有多數個氣孔43。氣孔43，係沿著基板S的邊，在中央部分41a以預定間隔配列成矩陣狀。又，噴淋板41，係在包圍中央部分41a之周邊部分41b貫穿有複數個貫通孔44。噴淋板41，係藉由被插入至各貫通孔44的螺絲45而固定於基座構件42。Fig. 2A is a plan view showing the lower surface side of the shower plate of the first embodiment. Fig. 2B is a cross-sectional view showing a cross section of a shower plate according to the first embodiment. Fig. 2B is a cross-section showing the position of the line A-A in Fig. 2A. As shown in FIG. 2A, the shower plate 41 is formed into a corner plate shape, and a plurality of air holes 43 are penetrated in the central portion 41a in the thickness direction. The air holes 43 are arranged in a matrix shape at predetermined intervals in the central portion 41a along the sides of the substrate S. The shower plate 41 has a plurality of through holes 44 formed in a peripheral portion 41b surrounding the central portion 41a. The shower plate 41 is fixed to the base member 42 by a screw 45 inserted into each of the through holes 44.
在噴淋板41，係設置有可將噴淋板41加熱至所期望之溫度的加熱裝置。例如，噴淋板41，係被構成為在內部埋設有加熱器50之加熱器板。加熱器50，係以通過氣孔43之間且使配置位置以預定間隔而全面配置的方式，在中央部分41a內彎曲地配置。在圖2A，係表示加熱器50之配置的一例。另外，加熱器50，係亦可不被埋設於噴淋板41。例如，加熱器50，係亦可設置於噴淋板41之背面。例如，噴淋板41，係亦可在基座構件42側接觸配置有設置了加熱器50之加熱器單元。The shower plate 41 is provided with a heating device capable of heating the shower plate 41 to a desired temperature. For example, the shower plate 41 is a heater plate in which the heater 50 is embedded. The heater 50 is arranged in a curved manner in the central portion 41 a so as to pass through the air holes 43 with the arrangement positions being fully arranged at predetermined intervals. FIG. 2A shows an example of the arrangement of the heater 50. The heater 50 need not be buried in the shower plate 41. For example, the heater 50 may be provided on the back surface of the shower plate 41. For example, the shower plate 41 may be a heater unit in which the heater 50 is disposed in contact with the base member 42 side.
加熱器50，係被電性連接於後述之加熱器電源，並藉由從加熱器電源所供給的電力而發熱，該加熱器電源，係被設置於處理容器20之外部。The heater 50 is electrically connected to a heater power source described later, and generates heat by power supplied from the heater power source. The heater power source is provided outside the processing container 20.
圖3A，係表示將電力供給至加熱器之供電系統之構成的剖面圖。圖3B，係表示將電力供給至加熱器之供電系統之構成的平面圖。FIG. 3A is a cross-sectional view showing a configuration of a power supply system that supplies power to a heater. Fig. 3B is a plan view showing a configuration of a power supply system for supplying electric power to the heater.
在噴淋板41之周邊部，係設置有露出加熱器50之端部的端子部50a。又，在上蓋22之側壁，係在與端子部50a之位置對應的位置形成有供電端子導入孔54，並在供電端子導入孔54設置有供電端子51。端子部50a與供電端子51，係藉由連接器52而電性連接。另外，圖3A，係表示噴淋板41之端子部50a與供電端子51之連接部分的剖面。圖3B，係表示噴淋板41之端子部50a與供電端子51之連接部分的下面側。A terminal portion 50 a is provided at a peripheral portion of the shower plate 41 to expose an end portion of the heater 50. A power supply terminal introduction hole 54 is formed on a side wall of the upper cover 22 at a position corresponding to the position of the terminal portion 50 a, and a power supply terminal 51 is provided in the power supply terminal introduction hole 54. The terminal portion 50 a and the power supply terminal 51 are electrically connected through a connector 52. In addition, FIG. 3A is a cross section showing a connection portion between the terminal portion 50 a of the shower plate 41 and the power supply terminal 51. FIG. 3B shows the lower side of the connection portion between the terminal portion 50 a of the shower plate 41 and the power supply terminal 51.
供電端子51，係經由配線被電性連接於加熱器電源53，供給來自加熱器電源53之電力。加熱器50，係經由供電端子51及連接器52供給來自加熱器電源53之電力。加熱器電源53，係可藉由接收來自後述之控制部90之控制信號的方式，控制供給至加熱器50之電力。控制部90，係藉由控制供給至加熱器50之電力的方式，控制加熱器50之溫度。另外，為了進行加熱器50之溫度控制，而以與供電端子導入孔54相同的構成，連接熱電耦或測溫電阻器等的溫度感測器。The power supply terminal 51 is electrically connected to the heater power source 53 through wiring, and supplies power from the heater power source 53. The heater 50 is supplied with electric power from a heater power source 53 via a power supply terminal 51 and a connector 52. The heater power supply 53 can control the electric power supplied to the heater 50 by receiving a control signal from a control unit 90 described later. The control unit 90 controls the temperature of the heater 50 by controlling the power supplied to the heater 50. In addition, in order to control the temperature of the heater 50, a temperature sensor such as a thermocouple or a temperature measuring resistor is connected in the same configuration as the power supply terminal introduction hole 54.
像這樣設成為在噴淋板41設置加熱器50，並在上蓋22設置供電端子51且從供電端子51供電至加熱器50的構成，藉此，關於未導入本實施形態的構成之既有的基板處理裝置，亦可藉由將供電端子導入孔54追加至上蓋22並更換噴淋板41的方式，輕易導入本實施形態之基板處理裝置10的構成。As described above, the heater 50 is provided on the shower plate 41, the power supply terminal 51 is provided on the upper cover 22, and power is supplied to the heater 50 from the power supply terminal 51. Thus, the conventional structure without the introduction of the embodiment The substrate processing apparatus can also be easily introduced into the configuration of the substrate processing apparatus 10 of this embodiment by adding a power supply terminal introduction hole 54 to the upper cover 22 and replacing the shower plate 41.
在此，在基板處理裝置10，係在進行蝕刻之際，使處理氣體從噴頭40噴出，並施加高頻電力而使處理氣體電漿化，藉此，進行蝕刻處理。例如，在基板處理裝置10中，係經由未圖示之配線，從未圖示之高頻電源對噴淋板41施加預定頻率的高頻電力，使處理氣體電漿化，藉此，進行蝕刻處理。另外，基板處理裝置10，雖係設成為具有將高頻電力施加至噴淋板41而進行電漿化的電容耦合電漿源者，但並不限定於此。作為可採用於基板處理裝置10之電漿源，係例如可列舉出感應耦合電漿源等，該感應耦合電漿源，係藉由將高頻電力施加至天線的方式，生成電漿。Here, in the substrate processing apparatus 10, when the etching is performed, the processing gas is ejected from the shower head 40, and high-frequency power is applied to plasmatize the processing gas, thereby performing the etching process. For example, in the substrate processing apparatus 10, a high-frequency power of a predetermined frequency is applied to the shower plate 41 via a wiring (not shown) from a high-frequency power source (not shown), and the processing gas is plasmatized to perform etching. deal with. The substrate processing apparatus 10 is a capacitor-coupled plasma source having a high-frequency power applied to the shower plate 41 to perform plasma conversion, but the substrate processing apparatus 10 is not limited to this. Examples of the plasma source that can be used in the substrate processing apparatus 10 include an inductively coupled plasma source. The inductively coupled plasma source generates a plasma by applying high-frequency power to an antenna.
為了使處理氣體電漿化所施加之高頻電力，係有作為高頻雜訊而對加熱器50之配線造成不良影響的情形。The high-frequency power applied to plasma process gas may cause high-frequency noise to adversely affect the wiring of the heater 50.
因此，在基板處理裝置10中，係在加熱器50、端子部50a、供電端子51、連接器52之配線的周圍設置導電性之屏蔽。例如，加熱器50、端子部50a、供電端子51及連接器52，係使用不銹鋼管作為導電性之屏蔽，且使不銹鋼管之內部絕緣來配置配線。又，導電性屏蔽之構件，係亦可為鋁。Therefore, in the substrate processing apparatus 10, a conductive shield is provided around the wiring of the heater 50, the terminal portion 50a, the power supply terminal 51, and the connector 52. For example, the heater 50, the terminal portion 50a, the power supply terminal 51, and the connector 52 are configured by using a stainless steel tube as a conductive shield and insulating the inside of the stainless steel tube. The conductive shielding member may be aluminum.
供電端子51，係被設成為在與上蓋22的供電端子導入孔54之間設置O形環等的氣密構件，可保持處理容器20內之氣密性。又，供電端子51，係在處理容器20之外部側，與成為接地電位的構件連接。例如，上蓋22，係藉由與接地之容器本體21接觸的方式，而成為接地電位。供電端子51，係在處理容器20之外部側，導電性之屏蔽被電性連接於上蓋22。藉此，可遮斷因高頻電力而產生的高頻雜訊，並可穩定地控制對加熱器50之電力。The power supply terminal 51 is provided as an airtight member such as an O-ring between the power supply terminal introduction hole 54 of the upper cover 22 and can maintain the airtightness in the processing container 20. The power supply terminal 51 is external to the processing container 20 and is connected to a member having a ground potential. For example, the upper lid 22 is brought to a ground potential by being in contact with a grounded container body 21. The power supply terminal 51 is connected to the outer side of the processing container 20, and a conductive shield is electrically connected to the upper cover 22. Accordingly, high-frequency noise generated by high-frequency power can be blocked, and power to the heater 50 can be stably controlled.
返回到圖1。基座構件42，係被接合於噴淋板41之與基板S對向之對向面的背面側。基座構件42，係藉由被設置於上面之外緣的保持構件47而固定上蓋22。保持構件47，係為了維持處理容器20內的真空或抑制微粒的進入，而藉由氣密構件所密封。基座構件42，係在與噴淋板41對向之對向面形成凹部，該凹部被設成為用以將處理氣體供給至複數個氣孔43的氣體擴散空間46。在氣體擴散空間46，係連接有未圖示之氣體供給管，經由氣體供給管，從氣體供給部供給處理氣體。Return to Figure 1. The base member 42 is bonded to the back surface side of the shower plate 41 facing the substrate S. The base member 42 is fixed to the upper cover 22 by a holding member 47 provided on the outer edge of the upper surface. The holding member 47 is sealed by an airtight member in order to maintain the vacuum in the processing container 20 or to prevent the entry of particles. The base member 42 forms a recessed portion on the surface facing the shower plate 41, and the recessed portion is provided as a gas diffusion space 46 for supplying the processing gas to the plurality of air holes 43. A gas supply pipe (not shown) is connected to the gas diffusion space 46, and a processing gas is supplied from a gas supply unit through the gas supply pipe.
在基座構件42，係設置有用以將基座構件42調整成所期望溫度的溫度調整裝置。例如，在基座構件42，係藉由以預定間隔在內部往返的方式，形成流路60。又，在容器本體21及上蓋22側壁部分，係以環繞壁面內的方式，形成流路61。又，在載置台30，係藉由以預定間隔在內部往返的方式，形成流路62。流路60、61、62，係分別經由未圖示之配管，與被設置於處理容器20之外部的急冷器單元連接，並個別地循環有流動性熱媒體。亦即，基座構件42，係建構有流路60或配管、急冷器單元等之熱媒體循環系統來作為溫度調整裝置。作為流動性熱媒體，雖係例如可列舉出Galden等，但只要使用適於控制範圍之溫度的液體即可。急冷器單元，係可藉由接收來自後述之控制部90之控制信號的方式，控制分別流動於流路60、61、62之流動性熱媒體的溫度或流量。控制部90，係可藉由控制從急冷器單元流動之流動性熱媒體的溫度或流量之方式，控制容器本體21、載置台30、噴淋板41的溫度。The base member 42 is provided with a temperature adjustment device for adjusting the base member 42 to a desired temperature. For example, the base member 42 forms the flow path 60 by reciprocating inside at a predetermined interval. A flow path 61 is formed in the side wall portion of the container body 21 and the upper lid 22 so as to surround the inside of the wall surface. In addition, a flow path 62 is formed on the mounting table 30 by reciprocating inside at a predetermined interval. The flow paths 60, 61, and 62 are connected to a quencher unit provided outside the processing container 20 through piping (not shown), and a fluid heat medium is circulated individually. That is, the base member 42 is a heat medium circulation system in which a flow path 60, a pipe, a chiller unit, or the like is constructed as a temperature adjustment device. Examples of the fluid heat medium include Galden and the like, but it is sufficient to use a liquid having a temperature suitable for the control range. The quencher unit can control the temperature or flow rate of the fluid heat medium flowing in the flow paths 60, 61, and 62, respectively, by receiving a control signal from a control unit 90 described later. The control unit 90 controls the temperature of the container body 21, the mounting table 30, and the shower plate 41 by controlling the temperature or flow rate of the fluid heat medium flowing from the quencher unit.
本實施形態之基板處理裝置10，係被設成為可使分別設定之溫度的流動性熱媒體個別地從急冷器單元循環於流路60、61、62。又，基板處理裝置10，係被設成為可藉由以加熱器50加熱的方式，進行噴淋板41之控制。藉此，基板處理裝置10，係被設成為可個別地控制容器本體21、載置台30、噴淋板41、基座構件42的溫度。又，雖未圖示，但噴淋板41與基座構件42之連接面，係形成為用以可分別進行獨立之溫度控制的隔熱構造。具體而言，係一面維持電性連接，一面使接觸面積最小化而抑制界面的熱傳導。The substrate processing apparatus 10 according to the present embodiment is configured to individually circulate the fluid heat medium at a set temperature from the quencher unit to the flow paths 60, 61, and 62. In addition, the substrate processing apparatus 10 is provided so that the shower plate 41 can be controlled by being heated by the heater 50. Thereby, the substrate processing apparatus 10 is provided so that the temperature of the container main body 21, the mounting table 30, the shower plate 41, and the base member 42 can be individually controlled. Although not shown, the connection surface between the shower plate 41 and the base member 42 is formed as a heat-insulating structure that enables independent temperature control. Specifically, while maintaining the electrical connection, the contact area is minimized and the heat conduction at the interface is suppressed.
上述構成之基板處理裝置10，係藉由控制部90，統合地控制其動作。控制部90，係例如電腦，控制基板處理裝置10之各部。例如，在控制部90，係設置有：程序控制器91，具備有CPU，控制基板處理裝置10之各部；使用者介面92；及記憶部93。The substrate processing apparatus 10 configured as described above is controlled by the control unit 90 in an integrated manner. The control unit 90 is, for example, a computer that controls each unit of the substrate processing apparatus 10. For example, the control unit 90 is provided with a program controller 91 including a CPU that controls each unit of the substrate processing apparatus 10, a user interface 92, and a memory unit 93.
使用者介面92，係由工程管理者為了管理基板處理裝置10而進行指令之輸入操作等的鍵盤或將基板處理裝置10之運轉狀況可視化地顯示的顯示器等所構成。The user interface 92 is constituted by a keyboard, such as an input operation for an instruction by a process manager to manage the substrate processing apparatus 10, or a display or the like that visually displays the operation status of the substrate processing apparatus 10.
記憶部93，係儲存有配方，該配方，係記憶有用以藉由程序控制器91之控制而實現基板處理裝置10所執行之各種處理的控制程式(軟體)或基板處理的處理條件資料等。而且，因應所需，藉由來自使用者介面92的指示等，將任意之配方從記憶部93讀出且使程序控制器91執行，藉此，在程序控制器91的控制下，進行基板處理裝置10之所期望的處理。又，控制程式或處理條件資料等的配方，係亦可利用被儲存於電腦可讀取之電腦記憶媒體(例如，硬碟、CD、軟碟片、半導體記憶體等)等的狀態者，或從其他裝置例如經由專用線路隨時傳送而於線上使用。The memory unit 93 stores a recipe for memorizing a control program (software) for processing various processes executed by the substrate processing apparatus 10 under control of the program controller 91, processing condition data of the substrate processing, and the like. In addition, according to the instructions, the instruction from the user interface 92 reads an arbitrary recipe from the memory unit 93 and causes the program controller 91 to execute it, thereby performing substrate processing under the control of the program controller 91. Desired processing of the device 10. In addition, the control program or the formula for processing the condition data can also be stored in a computer-readable computer memory medium (for example, hard disk, CD, floppy disk, semiconductor memory, etc.), or It is transmitted from another device at any time via a dedicated line and used online.
[動作之流程]
其次，說明關於基板處理裝置10之具體動作的流程。一開始，說明基板處理裝置10進行絕緣膜蝕刻時之動作的流程。圖4，係說明絕緣膜蝕刻之處理條件之一例的圖。[Flow of action]
Next, a flow of a specific operation of the substrate processing apparatus 10 will be described. Initially, a flow of operations performed when the substrate processing apparatus 10 performs etching of an insulating film will be described. FIG. 4 is a diagram illustrating an example of processing conditions for etching an insulating film.
基板處理裝置10，係將被設成為絕緣膜蝕刻之處理對象的基板S載置於載置台30。The substrate processing apparatus 10 mounts a substrate S which is a processing target for insulating film etching on a mounting table 30.
控制部90，係使真空排氣裝置動作，對處理容器20內進行真空排氣，將處理容器20內維持為所期望的真空度。又，控制部90，係分別使預定溫度之流動性熱媒體從急冷器單元個別地循環於流路60、61、62，且將容器本體21、載置台30、基座構件42的溫度分別控制成預定溫度。又，控制部90，係從加熱器電源53供給預定電力，且將噴淋板41之溫度控制成預定溫度。例如，如圖4所示般，將容器本體21控制成110℃，將載置台30控制成25℃，將基座構件42控制成110℃，將噴淋板41控制成150℃。The control unit 90 operates a vacuum exhaust device to evacuate the inside of the processing container 20 and maintain the inside of the processing container 20 to a desired degree of vacuum. The control unit 90 individually circulates the fluid heat medium of a predetermined temperature from the quencher unit to the flow paths 60, 61, and 62, and controls the temperature of the container body 21, the mounting table 30, and the base member 42 respectively. To a predetermined temperature. The control unit 90 supplies a predetermined power from the heater power source 53 and controls the temperature of the shower plate 41 to a predetermined temperature. For example, as shown in FIG. 4, the container body 21 is controlled to 110 ° C, the mounting table 30 is controlled to 25 ° C, the base member 42 is controlled to 110 ° C, and the shower plate 41 is controlled to 150 ° C.
而且，控制部90，係控制氣體供給部，使含有氟碳化物之處理氣體從噴頭40噴出，並施加高頻電力而使處理氣體電漿化，藉此，進行蝕刻處理。例如，如圖4所示般，使作為處理氣體之CHF3 /CF4 /Ar從噴頭40噴出，進行需要與下層膜之選擇比的絕緣膜蝕刻。另外，Ar，係亦可不添加至處理氣體。In addition, the control unit 90 is a control gas supply unit that executes an etching process by ejecting a processing gas containing fluorocarbon from the shower head 40 and applying high-frequency power to plasmatize the processing gas. For example, as shown in FIG. 4, CHF 3 / CF 4 / Ar, which is a processing gas, is ejected from the shower head 40, and an insulating film that requires a selective ratio to the underlying film is etched. In addition, Ar may not be added to the processing gas.
在此，一般而言，在需要與下層膜之選擇比的絕緣膜蝕刻中，係為了抑制下層膜之蝕刻，而進行生成CF系聚合物之使用了氟碳化物氣體的電漿處理。該些CF系聚合物之一部分，係在電漿處理中，作為生成物而沈積於噴頭40之噴淋板41的表面。以往，在基板處理裝置10中，係當繼續連續處理時，由於沈積於噴淋板41之表面的生成物剝落等而落下至基板S，引起製品不良，因此，於達到預定處理片數的時點，為了去除沈積之生成物，而進行維護。例如，在基板處理裝置10中，係卸下上蓋22，對處理容器20內進行大氣釋放，進行噴淋板41之交換、洗淨等的維護。Here, in general, in the etching of an insulating film that requires a selective ratio to the underlying film, a plasma treatment using a fluorocarbon gas is generated to suppress the etching of the underlying film to generate a CF-based polymer. A part of these CF-based polymers is deposited on the surface of the shower plate 41 of the shower head 40 as a product during the plasma treatment. Conventionally, in the substrate processing apparatus 10, when the continuous processing is continued, the products deposited on the surface of the shower plate 41 are peeled off and fall on the substrate S, causing product failure. Therefore, when the predetermined number of processing pieces is reached, In order to remove the deposited products, maintenance is performed. For example, in the substrate processing apparatus 10, the upper cover 22 is removed, the atmosphere in the processing container 20 is released, and maintenance such as exchange and cleaning of the shower plate 41 is performed.
然而，從經驗得知，以使用了氟碳化物氣體之電漿所生成之CF系聚合物，雖係在低溫時容易附著於壁面，但在高溫時並不會附著於壁面。又，已知：藉由將壁面保持為高溫的方式，提升與基底膜之選擇比。亦即，在獲得對基底膜所期望之選擇比的情況下，必需藉由壁面之溫度來調整投入的氟碳化物氣體量。具體而言，係只要壁面為低溫，則增加氟碳化物氣體，且只要為高溫，則減少氟碳化物氣體，藉此，可使所要求的蝕刻性能滿足。當然，由於氟碳化物氣體之投入量越少，則沈積於噴淋板41等的生成物亦越少，因此，需要與基底膜之選擇比的絕緣膜蝕刻，係以100℃以上之高溫進行處理。However, it is known from experience that CF-based polymers produced by plasmas using fluorocarbon gas are easy to adhere to the wall surface at low temperature, but do not adhere to the wall surface at high temperature. It is also known that the selectivity ratio to the base film is improved by keeping the wall surface at a high temperature. That is, in order to obtain a desired selection ratio with respect to the base film, it is necessary to adjust the amount of the fluorocarbon gas to be introduced by the temperature of the wall surface. Specifically, as long as the wall surface is at a low temperature, the fluorocarbon gas is increased, and when it is at a high temperature, the fluorocarbon gas is decreased, whereby the required etching performance can be satisfied. Of course, as the amount of fluorocarbon gas input is smaller, the products deposited on the shower plate 41 and the like are also smaller. Therefore, it is necessary to perform the etching of the insulating film at a ratio higher than that of the base film at a high temperature of 100 ° C or higher. deal with.
因此，基板處理裝置10，係在絕緣膜蝕刻的情況下，將噴淋板41控制成150℃。藉此，可將氟碳化物氣體之投入量抑制在必要最小限度，以抑制CF系聚合物沈積於噴淋板41之表面的情形。基板處理裝置10，係像這樣地抑制CF系聚合物的沈積，因此，可延長維護之周期。Therefore, the substrate processing apparatus 10 controls the shower plate 41 to 150 ° C. when the insulating film is etched. Thereby, the input amount of the fluorocarbon gas can be suppressed to the minimum necessary to prevent the CF polymer from being deposited on the surface of the shower plate 41. Since the substrate processing apparatus 10 suppresses the deposition of the CF-based polymer in this manner, the maintenance period can be extended.
然而，在欲抑制CF系聚合物沈積於噴淋板41之表面的情況下，考慮將噴頭40整體地控制成高溫。例如，考慮將噴頭40整體地控制成150℃。However, when it is desired to suppress the deposition of the CF-based polymer on the surface of the shower plate 41, it is considered to control the shower head 40 as a whole to a high temperature. For example, consider controlling the shower head 40 to 150 ° C as a whole.
但是，在將噴頭40整體地控制成高溫的情況下，噴頭40整體成為高溫而膨脹。在此，基板處理裝置10，係對應於基板S之尺寸而被大型化，且噴頭40亦被大型化。因此，當噴頭40整體成為高溫而膨脹時，則膨脹所致之尺寸的變化亦變大。例如，基座構件42從數毫米膨脹至數十毫米。如此一來，在噴頭40整體膨脹的情況下，在基板處理裝置10，係有發生不良狀況的情形。例如，存在如下述情形：保持噴頭40之保持構件47的密封產生偏差而變得無法維持氣密性。However, when the shower head 40 is controlled to a high temperature as a whole, the shower head 40 as a whole is expanded to a high temperature. Here, the substrate processing apparatus 10 is enlarged in accordance with the size of the substrate S, and the print head 40 is also enlarged. Therefore, when the nozzle head 40 is expanded at a high temperature as a whole, the size change caused by the expansion also becomes large. For example, the base member 42 expands from several millimeters to tens of millimeters. As described above, when the head 40 is expanded as a whole, a problem may occur in the substrate processing apparatus 10. For example, there is a case where the seal of the holding member 47 of the holding head 40 is deviated and airtightness cannot be maintained.
因此，在本實施形態中，係將基座構件42的溫度控制成低於噴淋板41的溫度即110℃。藉此，由於可抑制基座構件42之熱膨脹，因此，可抑制無法以保持構件47之密封維持氣密性的情形。Therefore, in this embodiment, the temperature of the base member 42 is controlled to be lower than the temperature of the shower plate 41, that is, 110 ° C. Accordingly, since the thermal expansion of the base member 42 can be suppressed, it is possible to suppress a situation where the airtightness cannot be maintained by the sealing of the holding member 47.
其次，說明基板處理裝置10進行金屬層蝕刻時之動作的流程。圖5，係說明金屬層蝕刻之處理條件之一例的圖。Next, a flow of operations performed when the substrate processing apparatus 10 performs metal layer etching will be described. FIG. 5 is a diagram illustrating an example of processing conditions for etching a metal layer.
基板處理裝置10，係將被設成為金屬層蝕刻之處理對象的基板S載置於載置台30。The substrate processing apparatus 10 mounts a substrate S that is a processing target for metal layer etching on a mounting table 30.
控制部90，係使真空排氣裝置動作，對處理容器20內進行真空排氣，將處理容器20內維持為所期望的真空度。又，控制部90，係分別使預定溫度之流動性熱媒體從急冷器單元個別地循環於流路60、61、62，且將容器本體21、載置台30、基座構件42的溫度分別控制成預定溫度。又，控制部90，係從加熱器電源53供給預定電力，且將噴淋板41之溫度控制成預定溫度。例如，如圖5所示般，將容器本體21控制成80℃，將載置台30控制成25℃，將基座構件42控制成40℃，將噴淋板41控制成80℃。The control unit 90 operates a vacuum exhaust device to evacuate the inside of the processing container 20 and maintain the inside of the processing container 20 to a desired degree of vacuum. The control unit 90 individually circulates the fluid heat medium of a predetermined temperature from the quencher unit to the flow paths 60, 61, and 62, and controls the temperature of the container body 21, the mounting table 30, and the base member 42 respectively. To a predetermined temperature. The control unit 90 supplies a predetermined power from the heater power source 53 and controls the temperature of the shower plate 41 to a predetermined temperature. For example, as shown in FIG. 5, the container body 21 is controlled to 80 ° C., the mounting table 30 is controlled to 25 ° C., the base member 42 is controlled to 40 ° C., and the shower plate 41 is controlled to 80 ° C.
而且，控制部90，係控制氣體供給部，使含有氯之處理氣體從噴頭40噴出，並施加高頻電力而使處理氣體電漿化，藉此，進行蝕刻處理。例如，如圖5所示般，使作為處理氣體之Cl2 /Ar從噴頭40噴出，進行金屬層蝕刻。另外，Ar，係亦可不添加至處理氣體。In addition, the control unit 90 is a control gas supply unit, and executes an etching process by ejecting a processing gas containing chlorine from the shower head 40 and applying high-frequency power to plasmatize the processing gas. For example, as shown in FIG. 5, Cl 2 / Ar, which is a processing gas, is ejected from the shower head 40 and the metal layer is etched. In addition, Ar may not be added to the processing gas.
在此，一般而言，在金屬層蝕刻中，係生成氯化鋁等的生成物，生成物會沈積於噴頭40之噴淋板41的表面。以往，在基板處理裝置10中，係為了去除沈積之生成物或更換消耗的零件，而定期地進行維護。例如，在基板處理裝置10中，係卸下上蓋22，對處理容器20內進行大氣釋放，進行噴淋板41之交換等的維護。Here, generally, during the etching of the metal layer, a product such as aluminum chloride is generated, and the product is deposited on the surface of the shower plate 41 of the shower head 40. Conventionally, in the substrate processing apparatus 10, maintenance is performed periodically in order to remove deposited products or replace consumable parts. For example, in the substrate processing apparatus 10, the upper cover 22 is removed, the atmosphere in the processing container 20 is released, and maintenance such as exchange of the shower plate 41 is performed.
然而，氯化鋁，係在進行蝕刻處理的壓力區域中，從蒸氣壓曲線以60℃前後成為氣體。However, aluminum chloride becomes a gas at a temperature of about 60 ° C. from the vapor pressure curve in the pressure region where the etching process is performed.
因此，在本實施形態中，係將噴淋板41控制成80℃。藉此，可抑制氯化鋁沈積於噴淋板41之表面的情形。基板處理裝置10，係像這樣地抑制氯化鋁的沈積，因此，可延長維護之周期。Therefore, in this embodiment, the shower plate 41 is controlled to 80 ° C. Thereby, the situation where aluminum chloride is deposited on the surface of the shower plate 41 can be suppressed. Since the substrate processing apparatus 10 suppresses the deposition of aluminum chloride in this manner, the maintenance period can be extended.
然而，在欲抑制氯化鋁之沈積的情況下，考慮將如不產生氯化鋁般的噴頭40全體地控制成高溫。例如，考慮將含有基座構件42的噴頭40整體地控制成80℃。However, when it is desired to suppress the deposition of aluminum chloride, it is considered that the shower head 40 as a whole does not generate aluminum chloride to be controlled to a high temperature. For example, it is considered that the shower head 40 including the base member 42 is controlled to 80 ° C as a whole.
在此，在基板處理裝置10中，係為了對氯等的鹵素系氣體提升耐腐蝕性，從而對被配置於處理容器20內之構件進行耐酸鋁處理等的氧化處理。例如，噴頭40之噴淋板41或基座構件42，係在表面施予耐酸鋁處理。Here, in the substrate processing apparatus 10, in order to improve the corrosion resistance of a halogen-based gas such as chlorine, a member disposed in the processing container 20 is subjected to an oxidation treatment such as an acid-resistant aluminum treatment. For example, the shower plate 41 or the base member 42 of the shower head 40 is treated with an acid-resistant aluminum surface.
基板處理裝置10，係在將噴頭40整體地控制成高溫的情況下，經耐酸鋁處理之表面會發生裂縫。而且，處理氣體所含有的氯會侵入至裂縫內。尤其，在將噴頭40整體地控制成高溫的情況下，基座構件42，係氯會大量侵入至「發生於面對供給處理氣體之氣體擴散空間46之表面」的裂縫。In the substrate processing apparatus 10, when the shower head 40 is controlled to a high temperature as a whole, cracks may occur on the surface treated with alumite. In addition, chlorine contained in the processing gas penetrates into the cracks. In particular, when the shower head 40 is controlled to a high temperature as a whole, the base member 42 will invade a large amount of chlorine into cracks "occurring on the surface facing the gas diffusion space 46 to which the processing gas is supplied".
基板處理裝置10，係在像這樣的狀態下，為了維護，而在卸下上蓋22，對處理容器20內進行大氣釋放的情況下，因侵入至裂縫內之氯會與大氣中的水分反應而成為鹽酸，因此，容易發生腐蝕。例如，在面對基座構件42之氣體擴散空間46的表面會發生腐蝕。亦即，基板處理裝置10，係在處理氣體含有氯的情況下，當將噴頭40整體地設成為高溫時，則容易誘發基座構件42之腐蝕。噴淋板41雖亦相同地擔心鹽酸所致之腐蝕，但在大氣解放後，可藉由迅速洗淨的方式，抑制鹽酸所致之腐蝕。但是，由於基座構件42難以拆卸，因此，在通常的維護中，係無法充分洗淨。When the substrate processing apparatus 10 is in such a state, for maintenance, the upper cover 22 is removed and the inside of the processing container 20 is released to the atmosphere. The chlorine intruding into the cracks reacts with the moisture in the atmosphere. Since it becomes hydrochloric acid, corrosion easily occurs. For example, the surface of the gas diffusion space 46 facing the base member 42 is corroded. That is, when the substrate processing apparatus 10 contains chlorine in the process gas, and if the shower head 40 is set to a high temperature as a whole, corrosion of the base member 42 is easily induced. Although the shower plate 41 is also worried about the corrosion caused by hydrochloric acid in the same way, after the atmosphere is liberated, the corrosion caused by hydrochloric acid can be suppressed by rapid cleaning. However, since the base member 42 is difficult to remove, it cannot be sufficiently cleaned during normal maintenance.
因此，在本實施形態中，係將基座構件42的溫度控制成低於噴淋板41的溫度即40℃。藉此，可抑制基座構件42的耐酸鋁裂縫，且抑制腐蝕之發生。Therefore, in the present embodiment, the temperature of the base member 42 is controlled to be 40 ° C. lower than the temperature of the shower plate 41. Thereby, the acid-resistant aluminum cracks of the base member 42 can be suppressed, and the occurrence of corrosion can be suppressed.
[效果]
如此一來，本實施形態之基板處理裝置10，係具有：噴頭40，與載置基板S之載置台30對向，且被配置於處理容器20內並噴出處理氣體。噴頭40，係具有：噴淋板41，與載置台30對向配置，形成有將處理氣體噴出至處理容器20內的複數個氣孔43，並設置有加熱器50；及基座構件42，被接合於噴淋板41之與載置台30對向之對向面的背面側，形成有構成用以將處理氣體供給至複數個氣孔43之空間的凹部，並設置有流路60。藉此，基板處理裝置10，係可分別對噴淋板41與基座構件42進行溫度控制。[effect]
As described above, the substrate processing apparatus 10 according to the present embodiment includes the shower head 40, which is opposed to the mounting table 30 on which the substrate S is placed, and is disposed in the processing container 20 and ejects a processing gas. The shower head 40 includes a shower plate 41 disposed opposite to the mounting table 30, a plurality of air holes 43 for ejecting a processing gas into the processing container 20, and a heater 50 is provided, and a base member 42 is provided. A recessed portion is formed on the back surface side of the shower plate 41 opposite to the facing surface facing the mounting table 30 to form a space for supplying the processing gas to the plurality of air holes 43, and a flow path 60 is provided. Thereby, the substrate processing apparatus 10 can control the temperature of the shower plate 41 and the base member 42 separately.
又，在本實施形態之基板處理裝置10中，加熱器50，係藉由具有導電性之外裝的供電端子51，供給電力。供電端子51，係被設置於處理容器20之壁面，並使外裝接觸於成為接地電位的上蓋22而與加熱器電源53連接。藉此，基板處理裝置10，係可藉由導電性之外裝來遮斷因高頻電力而產生的高頻雜訊，並可穩定地控制對加熱器50之電力。In the substrate processing apparatus 10 according to this embodiment, the heater 50 is supplied with electric power through a power supply terminal 51 having a conductive exterior. The power supply terminal 51 is provided on the wall surface of the processing container 20, and the exterior is in contact with the upper cover 22 which is at a ground potential, and is connected to the heater power source 53. Thereby, the substrate processing apparatus 10 can block high-frequency noise generated by high-frequency power by a conductive exterior, and can stably control the power to the heater 50.
又，本實施形態之基板處理裝置10，係具有控制部90。控制部90，係以使噴淋板41之溫度成為高於藉由處理氣體所生成的生成物之蒸發溫度的第1溫度之方式，控制加熱器50。又，控制部90，係以使基座構件42之溫度成為低於第1溫度的第2溫度之方式，控制熱媒體循環系統。藉此，基板處理裝置10，係在藉由含有氟碳化物之處理氣體來進行基板S之絕緣膜蝕刻的情況下，使氟碳氣體之投入量最小化，藉此，可抑制CF系聚合物的沈積，並可延長維護之周期。又，基板處理裝置10，係可抑制基座構件42之熱膨脹，並可藉由保持基座構件42之保持構件47的密封等來維持氣密性。又，基板處理裝置10，係在藉由含有氯系之處理氣體來進行基板S之金屬層蝕刻的情況下，可抑制氯化鋁的沈積，並可延長維護之周期。又，基板處理裝置10，係可抑制基座構件42之腐蝕。The substrate processing apparatus 10 according to this embodiment includes a control unit 90. The control unit 90 controls the heater 50 so that the temperature of the shower plate 41 becomes a first temperature higher than the evaporation temperature of the product generated by the processing gas. The control unit 90 controls the heat medium circulation system so that the temperature of the base member 42 becomes a second temperature lower than the first temperature. With this, the substrate processing apparatus 10 minimizes the input amount of the fluorocarbon gas when the insulating film of the substrate S is etched by the processing gas containing the fluorocarbon, thereby suppressing the CF-based polymer. And can extend the maintenance cycle. In addition, the substrate processing apparatus 10 is capable of suppressing thermal expansion of the base member 42 and maintaining airtightness by holding the seal of the holding member 47 of the base member 42 or the like. In addition, when the substrate processing apparatus 10 is used to etch the metal layer of the substrate S by using a chlorine-containing processing gas, the deposition of aluminum chloride can be suppressed, and the maintenance period can be extended. The substrate processing apparatus 10 can suppress corrosion of the base member 42.
(第2實施形態)
其次，說明關於第2實施形態。由於第2實施形態之基板處理裝置10，係與圖1所示之第1實施形態之基板處理裝置10的構成大致相同，故省略說明。(Second Embodiment)
Next, the second embodiment will be described. Since the substrate processing apparatus 10 according to the second embodiment has substantially the same configuration as the substrate processing apparatus 10 according to the first embodiment shown in FIG. 1, description thereof is omitted.
圖6，係表示第2實施形態之噴淋板之下面側的平面圖。如圖6所示般，噴淋板41，係被分割成複數個分割板70。例如，圖6所示之噴淋板41，係被分割成6個分割板70，且被構成為將6個分割板70配置成2×3。各分割板70，係分別設置加熱器50。另外，圖6之例子為一例，構成噴淋板41之分割板70的片數、配置，係不限定於此。Fig. 6 is a plan view showing a lower surface side of a shower plate according to a second embodiment. As shown in FIG. 6, the shower plate 41 is divided into a plurality of divided plates 70. For example, the shower plate 41 shown in FIG. 6 is divided into six divided plates 70 and is configured to arrange the six divided plates 70 into 2 × 3. Each of the division plates 70 is provided with a heater 50. In addition, the example of FIG. 6 is an example, and the number and arrangement of the division plates 70 constituting the shower plate 41 are not limited thereto.
噴淋板41，係複數個分割板70被分成複數個群組。圖6所示之噴淋板41，係6個分割板70被分成相鄰之各2個的3個群組71a、71b、71c。噴淋板41，係依各個群組71a、71b、71c，以具有導電性之外裝的連接器72來連接相鄰之分割板70之加熱器50的端子部50a間。The shower plate 41 includes a plurality of divided plates 70 divided into a plurality of groups. The shower plate 41 shown in FIG. 6 is a system in which six divided plates 70 are divided into two adjacent groups of three 71a, 71b, and 71c. The shower plate 41 is connected between the terminal portions 50 a of the heaters 50 of the adjacent divided plates 70 with the connector 72 having a conductive exterior according to each of the groups 71 a, 71 b, and 71 c.
又，在上蓋22之側壁，係依各個群組71a、71b、71c，在與分割板70之位置對應的位置形成有供電端子導入孔，並在供電端子導入孔設置有供電端子51。位於各分割板70之上蓋22的側壁側之端子部50a，係藉由連接器52與供電端子51電性連接。In addition, on the side wall of the upper cover 22, a power supply terminal introduction hole is formed at a position corresponding to the position of the partition plate 70 according to each group 71a, 71b, and 71c, and a power supply terminal 51 is provided in the power supply terminal introduction hole. The terminal portion 50 a located on the side wall of the upper cover 22 of each of the divided plates 70 is electrically connected to the power supply terminal 51 through a connector 52.
供電端子51，係依各個群組71a、71b、71c分開配線系統，且被電性連接於加熱器電源53，供給來自加熱器電源53之電力。加熱器電源53，係可藉由接收來自後述之控制部90之控制信號的方式，依各個群組71a、71b、71c控制供給至加熱器50之電力。控制部90，係被設成為可依各個群組71a、71b、71c，藉由控制供給至加熱器50之電力的方式，依各個群組71a、71b、71c控制加熱器50之溫度。藉此，噴淋板41，係被設成為可依群組71a、71b、71c之分割板70的各個區域，個別地控制溫度。The power supply terminal 51 is divided into wiring systems according to the groups 71a, 71b, and 71c, and is electrically connected to the heater power source 53 to supply power from the heater power source 53. The heater power supply 53 can control the electric power supplied to the heater 50 according to each group 71a, 71b, and 71c by receiving a control signal from a control unit 90 described later. The control unit 90 is configured to control the temperature of the heater 50 according to each group 71a, 71b, and 71c, and to control the power supplied to the heater 50, according to each group 71a, 71b, and 71c. Thereby, the shower plate 41 is provided so that the temperature may be controlled individually by each area of the division plate 70 of the group 71a, 71b, 71c.
控制部90，係在進行蝕刻處理等的基板處理之際，依噴淋板41之群組71a、71b、71c之分割板70的各個區域，個別地控制溫度。例如，中央之區域的分割板70，係從周圍傳導熱且容易成為高溫。又，周邊之區域的分割板70，係從周圍傳導的熱較少且容易成為低溫。因此，控制部90，係將中央之區域的分割板70之加熱器50的溫度控制為較低，且將周邊之區域的分割板70之加熱器50的溫度控制為較高。藉此，基板處理裝置10，係可減小噴淋板41之每區域的溫度差。The control unit 90 individually controls the temperature of each region of the division plate 70 of the groups 71a, 71b, and 71c of the shower plate 41 when performing substrate processing such as etching processing. For example, the partition plate 70 in the center region conducts heat from the surroundings and easily becomes high temperature. In addition, the division plate 70 in the surrounding area has less heat conducted from the surroundings and tends to become low temperature. Therefore, the control unit 90 controls the temperature of the heater 50 of the partition plate 70 in the central area to be low, and controls the temperature of the heater 50 of the partition plate 70 in the peripheral area to be high. Accordingly, the substrate processing apparatus 10 can reduce the temperature difference in each area of the shower plate 41.
[效果]
如此一來，本實施形態之基板處理裝置10，係藉由分別設置有加熱器50的複數個分割板70，構成噴淋板41。複數個分割板70，係以具有導電性之外裝的連接器72來連接加熱器50間。藉此，基板處理裝置10，係可藉由組合複數個分割板70的方式，構成大尺寸之噴淋板41。[effect]
In this way, the substrate processing apparatus 10 of this embodiment is constituted by a plurality of divided plates 70 each provided with a heater 50 to constitute a shower plate 41. The plurality of divided plates 70 are connected between the heaters 50 by a connector 72 having a conductive exterior. Accordingly, the substrate processing apparatus 10 can form a large-sized shower plate 41 by combining a plurality of divided plates 70.
又，本實施形態之基板處理裝置10，係複數個分割板70被分成複數個群組，並被設成為可依各個群組調整對加熱器之供給電力。藉此，基板處理裝置10，係可依各群組之分割板70的各個區域，個別地控制溫度。In the substrate processing apparatus 10 of this embodiment, a plurality of divided plates 70 are divided into a plurality of groups, and the power supply to the heater can be adjusted for each group. Thereby, the substrate processing apparatus 10 can individually control the temperature in accordance with each region of the division plate 70 of each group.
(第3實施形態)
其次，說明關於第3實施形態。由於第3實施形態之基板處理裝置10，係與圖1所示之第1實施形態之基板處理裝置10的構成大致相同，故省略說明。(Third Embodiment)
Next, the third embodiment will be described. Since the substrate processing apparatus 10 according to the third embodiment has substantially the same configuration as the substrate processing apparatus 10 according to the first embodiment shown in FIG. 1, description thereof is omitted.
圖7，係概略地表示第3實施形態之噴頭之構成的圖。第3實施形態之噴頭40，係與圖1所示之第1實施形態及第2實施形態的噴頭40，由於有一部分為相同構成，因此，針對相同部分，係賦予相同符號而省略說明，主要針對不同部分進行說明。Fig. 7 is a diagram schematically showing the configuration of a showerhead according to a third embodiment. The nozzle head 40 of the third embodiment is the same as the nozzle head 40 of the first embodiment and the second embodiment shown in FIG. 1 because a part has the same structure. Therefore, the same parts are given the same symbols and descriptions are omitted. Describes the different parts.
第3實施形態之基板處理裝置10，係藉由加熱器板80與蓋板81，構成噴淋板41。The substrate processing apparatus 10 according to the third embodiment includes a heater plate 80 and a cover plate 81 to form a shower plate 41.
加熱器板80，係面對基座構件42，貫穿有複數個氣孔43a。又，加熱器板80，係以通過氣孔43a之間的方式，在內部埋設有加熱器50。The heater plate 80 faces the base member 42 and has a plurality of air holes 43a therethrough. The heater plate 80 is embedded with the heater 50 so as to pass between the air holes 43a.
蓋板81，係被接合於加熱器板80之載置台30側，在與加熱器板80之各氣孔43a對應的位置分別貫穿有複數個氣孔43b。氣孔43a及氣孔43b，係連通，作為將處理氣體噴出至處理容器20內的氣孔43而發揮功能。The cover plate 81 is joined to the mounting table 30 side of the heater plate 80, and a plurality of air holes 43b are penetrated at positions corresponding to the air holes 43a of the heater plate 80, respectively. The air holes 43a and 43b communicate with each other, and function as air holes 43 for ejecting the processing gas into the processing container 20.
蓋板81，係被設成為與加熱器板80相同程度的尺寸或大於加熱器板80的尺寸，且覆蓋加熱器板80之載置台30側的面。藉此，在進行了蝕刻處理等的基板處理之際所生成的生成物(所謂附著物)，係主要沈積於蓋板81。又，構成噴淋板41的零件中，主要是蓋板81受到因電漿而消耗等的損傷。The cover plate 81 is provided to be the same size as or larger than the heater plate 80, and covers the surface on the mounting plate 30 side of the heater plate 80. As a result, products (so-called adherents) generated when substrate processing such as etching is performed are mainly deposited on the cover plate 81. In addition, among the components constituting the shower plate 41, the cover plate 81 is mainly damaged by consumption due to the plasma.
在基板處理裝置10中，係為了去除沈積之生成物或更換消耗的零件，而定期地進行維護。例如，在第3實施形態之基板處理裝置10中，係卸下上蓋22，對處理容器20內進行大氣釋放，將構成噴淋板41的零件中之蓋板81進行更換。In the substrate processing apparatus 10, maintenance is performed periodically to remove deposited products or replace consumable parts. For example, in the substrate processing apparatus 10 according to the third embodiment, the upper cover 22 is removed, the atmosphere in the processing container 20 is released, and the cover plate 81 among the components constituting the shower plate 41 is replaced.
由於加熱器板80，係具有加熱器50之配線等，因此，對於更換而言等花費工夫，且為了內建加熱器50而耗費成本。藉由像這樣在噴頭40設置蓋板81的方式，加熱器板80，係抑制生成物之沈積，又，亦抑制電漿所致之消耗。藉此，由於基板處理裝置10，係可延長加熱器板80之更換的周期，因此，可降低維護的工夫與成本。Since the heater board 80 is provided with wiring and the like of the heater 50, it takes time for replacement and the like, and costs for the built-in heater 50. By providing the cover plate 81 on the shower head 40 as described above, the heater plate 80 suppresses the deposition of products and also suppresses the consumption caused by the plasma. Accordingly, since the substrate processing apparatus 10 can extend the replacement cycle of the heater board 80, the time and cost of maintenance can be reduced.
[效果]
如此一來，本實施形態之噴淋板41，係具有：加熱器板80，設置有加熱器50；及蓋板81，被接合於加熱器板80的載置台30側。藉此，基板處理裝置10，係可降低維護的工夫與成本。[effect]
In this way, the shower plate 41 of this embodiment includes the heater plate 80 on which the heater 50 is provided, and the cover plate 81 which is joined to the mounting plate 30 side of the heater plate 80. Accordingly, the substrate processing apparatus 10 can reduce the time and cost of maintenance.
以上，雖使用實施形態說明了本發明，但本發明之技術性範圍，係不限定於上述實施形態所記載的範圍。該領域具有通常知識者，係明白可對上述實施形態施加各種變更或改良。又，從申請專利範圍之記載，明白施加了像那樣的變更或改良之形態亦可包含於本發明的技術性範圍。As mentioned above, although this invention was demonstrated using embodiment, the technical scope of this invention is not limited to the range described in the said embodiment. Those skilled in the art will understand that various changes or improvements can be added to the above embodiments. Further, it is clear from the description of the scope of patent application that the form to which such a change or improvement is added may be included in the technical scope of the present invention.
例如，在上述的實施形態中，雖係以將基板S設成為玻璃基板而進行基板處理的情形為例進行說明，但並不限定於此。基板S，係亦可為半導體晶圓等。在該情況下，噴頭或處理容器之剖面的形狀，係亦可依照半導體晶圓之形狀而設成為圓形。For example, in the above-mentioned embodiment, although the case where the substrate S is made into a glass substrate and substrate processing is described as an example, it is not limited to this. The substrate S may be a semiconductor wafer or the like. In this case, the shape of the cross-section of the shower head or the processing container may be rounded according to the shape of the semiconductor wafer.
又，在上述的實施形態中，雖係以進行電漿蝕刻作為基板處理的情形為例進行說明，但並不限定於此。基板處理，係只要為成膜處理等、處理氣體所致之生成物的蓄積發生於噴頭40之處理，則亦可為任意者。Moreover, in the said embodiment, although the case where plasma etching was performed as a board | substrate process was demonstrated as an example, it is not limited to this. The substrate processing may be any one as long as the accumulation of products caused by the processing gas occurs in the head 40, such as a film forming process.
10‧‧‧基板處理裝置10‧‧‧ substrate processing equipment
20‧‧‧處理容器 20‧‧‧handling container
21‧‧‧容器本體 21‧‧‧ container body
22‧‧‧上蓋 22‧‧‧ Upper cover
30‧‧‧載置台 30‧‧‧mounting table
31‧‧‧支撐部 31‧‧‧ support
40‧‧‧噴頭 40‧‧‧ Nozzle
41‧‧‧噴淋板 41‧‧‧ shower plate
42‧‧‧基座構件 42‧‧‧ base member
43‧‧‧氣孔 43‧‧‧ Stomata
46‧‧‧氣體擴散空間 46‧‧‧Gas diffusion space
47‧‧‧保持構件 47‧‧‧ holding member
50‧‧‧加熱器 50‧‧‧ heater
50a‧‧‧端子部 50a‧‧‧Terminal
51‧‧‧供電端子 51‧‧‧Power supply terminal
52‧‧‧連接器 52‧‧‧ Connector
53‧‧‧加熱器電源 53‧‧‧heater power
60‧‧‧流路 60‧‧‧flow
70‧‧‧分割板 70‧‧‧ split board
72‧‧‧連接器 72‧‧‧ Connector
80‧‧‧加熱器板 80‧‧‧ heater board
81‧‧‧蓋板 81‧‧‧ Cover
90‧‧‧控制部 90‧‧‧Control Department
S‧‧‧基板 S‧‧‧ substrate
[圖1]圖1，係概略地表示實施形態之基板處理裝置的圖。[Fig. 1] Fig. 1 is a diagram schematically showing a substrate processing apparatus according to an embodiment.
[圖2A]圖2A，係表示第1實施形態之噴淋板之下面側的平面圖。 [Fig. 2A] Fig. 2A is a plan view showing the lower surface side of the shower plate of the first embodiment.
[圖2B]圖2B，係表示第1實施形態之噴淋板之剖面的剖面圖。 [Fig. 2B] Fig. 2B is a cross-sectional view showing a cross section of a shower plate according to the first embodiment.
[圖3A]圖3A，係表示將電力供給至加熱器之供電系統之構成的剖面圖。 [FIG. 3A] FIG. 3A is a cross-sectional view showing a configuration of a power supply system that supplies electric power to a heater.
[圖3B]圖3B，係表示將電力供給至加熱器之供電系統之構成的平面圖。 [FIG. 3B] FIG. 3B is a plan view showing the configuration of a power supply system that supplies power to the heater.
[圖4]圖4，係說明絕緣膜蝕刻之處理條件之一例的圖。 [Fig. 4] Fig. 4 is a diagram illustrating an example of processing conditions for etching an insulating film.
[圖5]圖5，係說明金屬層蝕刻之處理條件之一例的圖。 [Fig. 5] Fig. 5 is a diagram illustrating an example of processing conditions for etching a metal layer.
[圖6]圖6，係表示第2實施形態之噴淋板之下面側的平面圖。 [FIG. 6] FIG. 6 is a plan view showing a lower surface side of a shower plate according to a second embodiment.
[圖7]圖7，係概略地表示第3實施形態之噴頭之構成的圖。 [Fig. 7] Fig. 7 is a diagram schematically showing a configuration of a showerhead according to a third embodiment.
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| JP2023097115A (en) | 2021-12-27 | 2023-07-07 | 東京エレクトロン株式会社 | Substrate processing apparatus and substrate processing method |
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| JP2005260251A (en) * | 1999-04-06 | 2005-09-22 | Tokyo Electron Ltd | Mounting stand, plasma processing apparatus, and manufacturing method for mounting stand |
| JP3668079B2 (en) * | 1999-05-31 | 2005-07-06 | 忠弘 大見 | Plasma process equipment |
| JP4664119B2 (en) * | 2005-05-17 | 2011-04-06 | 東京エレクトロン株式会社 | Plasma processing equipment |
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| KR101295794B1 (en) * | 2011-05-31 | 2013-08-09 | 세메스 주식회사 | Apparatus for treating substrate |
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