TWI797616B - Optical device and method of manufacturing the same - Google Patents
Optical device and method of manufacturing the same Download PDFInfo
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- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
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- G02B1/113—Anti-reflection coatings using inorganic layer materials only
- G02B1/115—Multilayers
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- G—PHYSICS
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- G02B5/30—Polarising elements
Abstract
Description
本揭露是有關於一種光學元件及其製造方法。The disclosure relates to an optical element and a manufacturing method thereof.
現今光學元件製造常使用多層膜片以貼合方式達到線偏振光、圓偏振光、半穿透半反射光的光學功能。舉例來說,將線偏振片貼合於光學元件上,再以蒸鍍方式將抗反射功能膜蒸鍍在偏振片上,以使光學元件達到具有偏振光且抗反射的光學功效。Nowadays, multi-layer films are often used in the manufacture of optical components to achieve the optical functions of linearly polarized light, circularly polarized light, and semi-transparent and semi-reflected light. For example, a linear polarizer is attached to the optical element, and then an anti-reflection functional film is evaporated on the polarizer by evaporation, so that the optical element can achieve the optical function of polarized light and anti-reflection.
然而,現有的製程因為需要執行貼合步驟,使得光學元件的製造步驟變得繁複。另外,若同時貼合多層膜片將會因為高應力的累積而導致偏光效果不理想,並且貼合多層膜片將導致光學元件增厚。最後,多層膜片的貼合精準度將影響光學元件整體的透光性、霧度及厚度,並且進而影響到光線的行走路徑。However, the existing process requires a bonding step, which makes the manufacturing steps of the optical element complicated. In addition, if the multi-layer film is attached at the same time, the polarization effect will be unsatisfactory due to the accumulation of high stress, and the multi-layer film will cause the optical element to thicken. Finally, the lamination accuracy of the multilayer film will affect the overall light transmittance, haze and thickness of the optical element, and further affect the path of light.
因此,如何提出一種可解決上述問題的製造光學元件的方法,是目前業界亟欲投入研發資源解決的問題之一。Therefore, how to propose a method for manufacturing optical elements that can solve the above problems is one of the problems that the industry is eager to invest in research and development resources to solve.
有鑑於此,本揭露之一目的在於提出一種可有效解決上述問題的製造光學元件的方法。In view of this, one purpose of the present disclosure is to propose a method for manufacturing an optical element that can effectively solve the above problems.
本揭露是有關於一種製造光學元件的方法包含對基材斜向蒸鍍,以在基材的表面上形成至少一層第一無機氧化物膜對,以及對基材正向蒸鍍,以在第一無機氧化物膜上形成至少一層第二無機氧化物膜對。第一無機氧化物膜對與第二無機氧化物膜對的任一者的材料包含金屬元素及矽中之至少一者。The present disclosure relates to a method for manufacturing an optical element, including obliquely evaporating a substrate to form at least one first inorganic oxide film pair on the surface of the substrate, and forward evaporating the substrate to form at least one inorganic oxide film on the surface of the substrate At least one second inorganic oxide film pair is formed on one inorganic oxide film. The material of any one of the first inorganic oxide film pair and the second inorganic oxide film pair includes at least one of metal elements and silicon.
在目前一些實施方式中,對基材斜向蒸鍍之步驟包含沿著傾斜軸向將無機氧化物蒸鍍於表面上。傾斜軸向係相對於表面上的法線方向傾斜。In some current embodiments, the step of obliquely evaporating the substrate includes evaporating the inorganic oxide on the surface along the oblique axis. The tilt axis is tilted with respect to the normal direction on the surface.
在目前一些實施方式中,對基材斜向蒸鍍之步驟進一步包含沿著傾斜軸向將另一無機氧化物蒸鍍於無機氧化物上。In some current embodiments, the step of obliquely evaporating the substrate further includes evaporating another inorganic oxide on the inorganic oxide along the oblique axis.
在目前一些實施方式中,傾斜軸向與法線方向之間之角度在5度至89度的範圍中。In some current embodiments, the angle between the tilt axis and the normal direction is in the range of 5 degrees to 89 degrees.
在目前一些實施方式中,對基材斜向蒸鍍之步驟進一步包含沿著另一傾斜軸向將無機氧化物蒸鍍於表面上方。其中另一傾斜軸向係相對於法線方向傾斜。In some current embodiments, the step of obliquely evaporating the substrate further includes evaporating the inorganic oxide on the surface along another oblique axis. The other inclined axis is inclined relative to the normal direction.
在目前一些實施方式中,對基材斜向蒸鍍之步驟進一步包含沿著另一傾斜軸向將另一無機氧化物蒸鍍於表面上方。另一傾斜軸向係相對於法線方向傾斜。In some current embodiments, the step of obliquely evaporating the substrate further includes evaporating another inorganic oxide on the surface along another oblique axis. Another inclined axis is inclined relative to the normal direction.
在目前一些實施方式中,另一傾斜軸向與法線方向之間之角度在5度至89度的範圍中。In some current embodiments, the angle between the other inclined axis and the normal direction is in the range of 5 degrees to 89 degrees.
在目前一些實施方式中,對基材正向蒸鍍之步驟包含沿著正向軸向將兩無機氧化物依序蒸鍍於第一無機氧化物膜對上。正向軸向係平行於表面上的法線方向。In some current embodiments, the step of forward evaporating the substrate includes sequentially evaporating two inorganic oxides on the first pair of inorganic oxide films along the forward axis. The positive axis is parallel to the normal direction on the surface.
在目前一些實施方式中,製造光學元件的方法進一步包含:對該基材斜向蒸鍍,以在基材的另一表面上形成第三無機氧化物膜,其中表面與另一表面分別位於基材的相反兩側;以及對基材正向蒸鍍,以在第三無機氧化物膜上形成第四無機氧化物膜,其中第三無機氧化物膜對與第四無機氧化物膜對的任一者的材料包含金屬元素及矽中之至少一者。In some current embodiments, the method for manufacturing an optical element further includes: obliquely evaporating the substrate to form a third inorganic oxide film on the other surface of the substrate, wherein the surface and the other surface are respectively located at the base opposite sides of the material; and forward evaporation on the base material to form a fourth inorganic oxide film on the third inorganic oxide film, wherein any of the third inorganic oxide film pair and the fourth inorganic oxide film pair One material includes at least one of metal elements and silicon.
在目前一些實施方式中,第三無機氧化物膜對與第四無機氧化物膜對的任一者的材料包含WO 3、MgF 2、Si 3N 4、SiON、SiO 2、TiO 2、ZrO 2、Al 2O 3、ZnO 2、Cr 2O 3、SnO、In 2O 3、Ta 2O 5、Fe 2O 3、NbO 5中之至少一者。 In some current embodiments, the material of any one of the third inorganic oxide film pair and the fourth inorganic oxide film pair includes WO 3 , MgF 2 , Si 3 N 4 , SiON, SiO 2 , TiO 2 , ZrO 2 , Al 2 O 3 , ZnO 2 , Cr 2 O 3 , SnO, In 2 O 3 , Ta 2 O 5 , Fe 2 O 3 , and NbO 5 .
在目前一些實施方式中,第一無機氧化物膜對與第二無機氧化物膜對的任一者的材料包含WO 3、MgF 2、Si 3N 4、SiON、SiO 2、TiO 2、ZrO 2、Al 2O 3、ZnO 2、Cr 2O 3、SnO、In 2O 3、Ta 2O 5、Fe 2O 3、NbO 5中之至少一者。 In some current embodiments, the material of any one of the first inorganic oxide film pair and the second inorganic oxide film pair includes WO 3 , MgF 2 , Si 3 N 4 , SiON, SiO 2 , TiO 2 , ZrO 2 , Al 2 O 3 , ZnO 2 , Cr 2 O 3 , SnO, In 2 O 3 , Ta 2 O 5 , Fe 2 O 3 , and NbO 5 .
在目前一些實施方式中,第一無機氧化物膜對包含第一膜層以及第二膜層。第一膜層與第二膜層對第一方向偏極光具有第一折射率,並對第二方向偏極光分別具有相異之第二折射率與第三折射率。In some current embodiments, the first inorganic oxide film pair includes a first film layer and a second film layer. The first film layer and the second film layer have a first refractive index for the polarized light in the first direction, and have different second and third refractive indices for the polarized light in the second direction respectively.
本揭露是有關於一種光學元件,包含基材、第一無機氧化物膜對以及第二無機氧化物膜對。基材具有凹面與凸面。第一無機氧化物膜對位於凹面及凸面中之至少一者。第二無機氧化物膜對位於第一無機氧化物膜對上方。The disclosure relates to an optical element, which includes a substrate, a first pair of inorganic oxide films, and a pair of second inorganic oxide films. The substrate has concave and convex surfaces. The pair of first inorganic oxide films is located on at least one of the concave surface and the convex surface. The second pair of inorganic oxide films is located over the first pair of inorganic oxide films.
綜上所述,於本揭露的製造光學元件的方法中,同時具有第一無機氧化物膜對及第二無機氧化物膜對之光學元件可同時具有偏光功能及抗反射特性。與目前習知技術相比,本揭露所提供的製造光學元件的方法省去了貼合偏光膜片之製程,其可以與抗反射層一同製作以達到節省製造成本的效果。並且,因為本揭露所提供之方法利用蒸鍍技術製作,因此可以依照需要規格製作在不同基材表面上,相對於目前習知的貼合製程具有更為廣泛的應用範圍。此外,膜片(膜對)的厚度可以藉由蒸鍍技術精準的控制,使得由本揭露之方法所製作出的光學元件薄膜(例如,偏光膜)具有奈米至微米等級的厚度。其相對於習知貼膜所使用之膜厚(例如,在毫米至微米等級)更薄,在更小體積內使光學元件達到相同或更佳的光學性能。另外,本揭露之方法也改善了貼膜製程容易造成的應力問題以及貼膜平整度問題,並且因此改善通過光學元件之光路徑,使光學元件具有更好的光學效果。To sum up, in the method for manufacturing an optical element of the present disclosure, the optical element having both the first inorganic oxide film pair and the second inorganic oxide film pair can simultaneously have polarization function and anti-reflection property. Compared with the current conventional technology, the method for manufacturing the optical element provided by the present disclosure omits the process of attaching the polarizing film, which can be manufactured together with the anti-reflection layer to achieve the effect of saving the manufacturing cost. Moreover, because the method provided by the present disclosure is produced by evaporation technology, it can be produced on the surface of different substrates according to the required specifications, and has a wider application range than the conventional bonding process. In addition, the thickness of the film (film pair) can be precisely controlled by evaporation technology, so that the optical element film (eg, polarizing film) produced by the disclosed method has a thickness of nanometers to micrometers. It is thinner than the film thickness (for example, on the order of millimeters to microns) used by conventional films, and enables optical elements to achieve the same or better optical performance in a smaller volume. In addition, the method disclosed in the present disclosure also improves the stress problem easily caused by the film-attaching process and the flatness of the film-attachment, and thus improves the light path passing through the optical element, so that the optical element has better optical effects.
以下揭露內容提供用於實施所提供標的之不同特徵的許多不同實施例或實例。以下描述部件及佈置之特定實例以簡化本揭露。當然,此些僅為實例,且並不意欲為限制性的。舉例而言,在如下描述中第一特徵在第二特徵之上或在第二特徵上形成可包括其中第一特徵與第二特徵形成為直接接觸之實施例,且亦可包括其中額外特徵可在第一特徵與第二特徵之間形成而使得第一特徵與第二特徵可不直接接觸的實施例。另外,本揭露可在各種實例中重複元件符號及/或字母。此重複係出於簡化及清楚目的,且其自身並不表示所論述之各種實施例及/或配置之間的關係。The following disclosure provides many different embodiments, or examples, for implementing different features of the provided subject matter. Specific examples of components and arrangements are described below to simplify the present disclosure. Of course, these are examples only, and are not intended to be limiting. For example, in the following description a first feature is formed on or on a second feature may include embodiments where the first feature is formed in direct contact with the second feature, and may also include embodiments where additional features may be An embodiment formed between a first feature and a second feature such that the first feature and the second feature may not be in direct contact. In addition, the present disclosure may repeat element symbols and/or letters in various examples. This repetition is for simplicity and clarity and does not in itself indicate a relationship between the various embodiments and/or configurations discussed.
另外,為了描述簡單,可在本文中使用諸如「在……下面」、「在……下方」、「下部」、「在……上方」、「上部」及其類似術語之空間相對術語,以描述如諸圖中所示的一個元件或特徵與另一(另外)元件或特徵的關係。除了諸圖中所描繪之定向以外,此些空間相對術語意欲涵蓋元件在使用中或操作中之不同定向。裝置可以其他方式定向(旋轉90度或以其他定向),且可同樣相應地解釋本文中所使用之空間相對描述詞。Additionally, for simplicity of description, spatially relative terms such as "below," "beneath," "lower," "above," "upper," and similar terms may be used herein to describe Describes the relationship of one element or feature to another (further) element or feature as shown in the figures. Such spatially relative terms are intended to encompass different orientations of the elements in use or operation in addition to the orientation depicted in the figures. The device may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein interpreted accordingly.
本文中使用的「大約」、「約」、「近似」或者「實質上」一般表示落在給定值或範圍的百分之二十之中,或在百分之十之中,或在百分之五之中。本文中所給予的數字量值為近似值,表示使用的術語如「大約」、「約」、「近似」或者「實質上」在未明確說明時可以被推斷。As used herein, "approximately", "approximately", "approximately" or "substantially" means falling within twenty percent, or within ten percent, or within one hundred percent of a given value or range Five out of five. Numerical quantities given herein are approximations, meaning that terms such as "about," "about," "approximately," or "substantially" can be inferred when not expressly stated otherwise.
第1圖為根據本揭露之一些實施例的製造光學元件的方法M1之示意圖。一種製造光學元件的方法M1包含:對基材斜向蒸鍍,以在基材的表面上形成至少一個第一無機氧化物膜對之步驟S101;以及對基材正向蒸鍍,以在至少一個第一無機氧化物膜上形成至少一第二無機氧化物膜對之步驟S102。在一些實施例中,第一無機氧化物膜對120與第二無機氧化物膜對130的任一者的材料包含金屬元素及矽中之至少一者。舉例來說,在一些實施例中,無機氧化物膜對之成分組成可以以化學式表示為I
xO
y或I
aO
b。其中I可以為金屬元素(例如,Ti、Zr、Al、Ta、Zn、Cr、Sn、In、Fe、Nb、Mg等)與Si元素,但本揭露並不以此為限。下文將詳細敘述製造光學元件的方法M1的內容。
FIG. 1 is a schematic diagram of a method M1 for manufacturing an optical element according to some embodiments of the present disclosure. A method M1 of manufacturing an optical element includes: obliquely evaporating a substrate to form at least one pair of first inorganic oxide films on the surface of the substrate in step S101; and forward evaporating the substrate to at least Step S102 of forming at least one second inorganic oxide film pair on a first inorganic oxide film. In some embodiments, the material of any one of the first inorganic
第2圖為根據本揭露之一些實施例的光學元件100之示意圖。在一些實施例中,光學元件100包含基材110。基材110具有第一表面112與第二表面114。在一些實施例中,基材110是具有3D曲面的光學元件,在如第2圖所示的實施例中,第一表面112為凹面,第二表面114為凸面,但此僅只為一個示例,本揭露並不以此為限。在其他實施例中,基材110的相對兩表面可以是同為凹面或同為凸面或凹面及凸面兩者組合。在一些實施例中,第一無機氧化物膜對120設置在基材110的第一表面112上,並且第二無機氧化物膜對130設置在第一無機氧化物膜對120上。在另外一些實施例中,光學元件100進一步包含第三無機氧化物膜對140以及第四無機氧化物膜對150。第三無機氧化物膜對140設置在基材110的第二表面114上,並且第四無機氧化物膜對150設置在第三無機氧化物膜對140上。下文將先針對第一無機氧化物膜對120、第二無機氧化物膜對130之製造方法詳細敘述。FIG. 2 is a schematic diagram of an
第3A圖為根據本揭露之一些實施例的光學元件100的斜向蒸鍍過程之示意圖。如第3A圖所示,於斜向蒸鍍製程的設置中,蒸鍍源900與基材110基本上相互面對彼此,並且蒸鍍源900之蒸鍍方向沿著軸B延伸。具體來說,在蒸鍍過程中蒸鍍材料(例如,無機氧化物)以軸B為中心軸,在遠離蒸鍍源900的一側沿著一個立體角展開。如此一來,蒸鍍材料可以在欲蒸鍍表面(例如,第一表面112)平均的分佈。在一些實施例中,對基材110斜向蒸鍍之步驟S101係採用熱蒸鍍製程、電子槍蒸鍍製程、雷射蒸鍍製程、濺鍍製程中之至少一者,但本揭露並不以此為限。請參照第1圖及第3A圖,在一些實施例中,對基材斜向蒸鍍之步驟S101包含沿著傾斜軸向將無機氧化物蒸鍍於第一表面112上。此處所稱之傾斜軸向即為相對於第一表面112上的法線方向傾斜之軸B。舉例來說,如第3A圖所示,法線方向定義為垂直貫穿基材110的第一表面112上任意一點的一條直線(如第3A圖中之軸A)。具體來說,在一些實施例中,斜向蒸鍍的執行方式為將基材110旋轉使得軸A與軸B之間具有一個角度α並且進行蒸鍍,但本揭露並不以此為限。FIG. 3A is a schematic diagram of an oblique evaporation process of the
第3B圖為根據本揭露之一些實施例的光學元件100之斜向蒸鍍後光學元件100表面的微觀結構示意圖。左側三個平行箭頭方向為表示斜向蒸鍍的方向,其與軸B平行。斜向蒸鍍將在基材110的第一表面112上形成斜向生長的磊晶柱結構126。具體來說,磊晶柱結構126中的每個磊晶柱127將依據軸A與軸B之間的角度α以及材料的蒸鍍速率,而產生具有相應傾斜角度(即,第3B圖中的角度β)所生長排列的磊晶柱127。角度β的定義為第一表面112的法線方向與磊晶柱127生長方向之間所夾的角度。規律排列的傾斜磊晶柱結構126具有偏振功能,使得光學元件100具有偏光效果。FIG. 3B is a schematic diagram of the microstructure of the surface of the
請參照第3A圖及第3B圖,在一些實施例中,傾斜軸向(軸B)與法線方向(軸A)之間之角度α在5度至89度的範圍中。並且,與角度α相應的角度β也在5度至89度的範圍中,但角度α與角度β不一定相同。舉例來說,以沈積材料為金屬鋁為例,當斜向蒸鍍製程以角度α為約86度(即軸A與軸B之間的角度為約86度)並且蒸鍍速率為0.5 nm/s的條件進行蒸鍍時,其所成長獲得的傾斜磊晶柱角度(即,角度β)為約50度。採用此角度α範圍進行斜向蒸鍍的理由在於,對於金屬材料來說,角度α需維持在此範圍才可以獲得傾斜磊晶柱結構126。Referring to FIG. 3A and FIG. 3B , in some embodiments, the angle α between the oblique axis (axis B) and the normal direction (axis A) is in the range of 5 degrees to 89 degrees. In addition, the angle β corresponding to the angle α is also in the range of 5 degrees to 89 degrees, but the angle α and the angle β are not necessarily the same. For example, taking the deposition material as aluminum as an example, when the angle α is about 86 degrees (that is, the angle between axis A and axis B is about 86 degrees) and the evaporation rate is 0.5 nm/ When evaporation is carried out under the conditions of s, the angle of the oblique epitaxial column (ie, angle β) obtained by the growth thereof is about 50 degrees. The reason for adopting this range of angle α for oblique evaporation is that, for metal materials, the angle α must be maintained in this range to obtain the oblique
第3C圖為根據第3B圖之光學元件100的巨觀結構之示意圖。如第3C圖所示,在一些特定實施例中(例如,前述斜向蒸鍍方式形成的金屬鋁磊晶柱結構126),以波長為632.8 nm之P偏極光與S偏極光由基材110端正向入射光學元件,穿透鋁磊晶柱結構126之P偏極光透射率為58.20%,並且穿透鋁磊晶柱結構126之S偏極光透射率為28.32%。由此可以得知,P偏極光與S偏極光之間透射率的差距達到29.88%,可說明磊晶柱結構126具有偏光效果。具體來說,當薄膜的微觀結構具有規律的柱狀排列(例如,磊晶柱結構126),則會使此微觀結構具有雙折射特性。換句話說,磊晶柱結構126會因為光的入射方向而對不同偏振方向產生相應不同的折射率。FIG. 3C is a schematic diagram of the macrostructure of the
進一步舉例來說,在第3B圖及第3C圖中,基材之空間座標被定義為,平行法線方向(軸A)的方向z、垂直法線方向的方向x以及同時垂直於方向x及方向z的方向y。並且,如第3B圖所示,磊晶柱結構126可以定義一個三維折射方向座標。其中,方向k3為平行磊晶柱127之生長方向,方向k1為垂直磊晶柱127之生長方向,方向k2為同時垂直法線方向(軸A)及磊晶柱127生長方向(方向k3)之另一方向。並且,於磊晶柱結構126中,在方向k1具有折射率n1,在方向k2具有折射率n2,在方向k3具有折射率n3。As a further example, in Figures 3B and 3C, the spatial coordinates of the substrate are defined as the direction z parallel to the normal direction (axis A), the direction x perpendicular to the normal direction, and the direction perpendicular to both directions x and Direction y in direction z. Also, as shown in FIG. 3B, the
請參照第3B圖及第3C圖,在一些實施例中,一個具有波長λ且具有P偏振光及S偏振光兩個偏振態之入射光由基材110的一側進入光學元件100(如第3C圖所示)。並且,其中P偏振光其電場震盪方向沿著空間座標之方向x,S偏振光其電場震盪方向沿著空間座標之方向y。當此入射光穿透傾斜磊晶柱結構126時會因為磊晶柱結構126的規律排列使P偏振光及S偏振光產生光程差δ。此光程差δ符合關係式:
。其中,n
p代表P偏振光在磊晶柱結構126中的折射率,其與折射率座標的關係為:
,其中角度β為前述提到的基材110之第一表面112的法線方向(軸A)與磊晶柱127生長方向(方向k3)之間所夾的角度。n
s代表S偏振光在磊晶柱結構126中的折射率,其與折射率座標的關係為:
。d代表磊晶柱結構126之厚度d。如前述所示,由關係式可以知道磊晶柱結構126的厚度d與傾斜角度β與磊晶柱結構126的偏光特性息息相關。因此,可以根據不同偏光特性的需要去調整斜向蒸鍍製程中的軸A與軸B之間之角度α以及蒸鍍速率。在一些實施例中,斜向蒸鍍製作無機氧化物膜對為1對或是2對以上。
Please refer to FIG. 3B and FIG. 3C. In some embodiments, an incident light with wavelength λ and two polarization states of P-polarized light and S-polarized light enters the
進一步來說,在一些實施例中,光學元件100的斜向蒸鍍製程所使用之材料也與其最終生長獲得的磊晶柱結構126之折射率數值相關。在一些實施例中,第一無機氧化物膜對120與第二無機氧化物膜對130的任一者的材料包含WO
3、MgF
2、Si
3N
4、SiON、SiO
2、TiO
2、ZrO
2、Al
2O
3、ZnO
2、Cr
2O
3、SnO、In
2O
3、Ta
2O
5、Fe
2O
3、NbO
5中之至少一者,但本揭露並不以此為限。不同材料以相同的角度α去製作會在不同折射方向座標獲得不同數值。舉例來說,ZrO
2及TiO
2具有以相同傾斜角度α(皆為30˚)進行斜向蒸鍍並且最終獲得的磊晶柱結構126具有相同角度β(皆為16.1˚)。但進一步測量各別材料的各別方向折射率發現,ZrO
2之折射率為n1=1.948、n2=1.969、n3=2.033,而TiO2之折射率為n1=2.437、n2=2.452、n3=2.522,這說明了即便採用相同角度α及角度β作為製程參數,不同材料會影響不同折射座標方向之折射率的數值變化。
Further, in some embodiments, the material used in the oblique evaporation process of the
另外一方面,相同材料以不同角度α進行斜向蒸鍍也會在不同折射率方向獲得不同數值。舉例來說,以相同材料ZrO
2以兩個不同角度α進行斜向蒸鍍(例如,一者α=30˚、另一者α=65˚)並且最終獲得的磊晶柱結構126的各別方向折射率發現,α=30˚的ZrO
2之折射率為n1=1.948、n2=1.969、n3=2.033,而α=65˚的ZrO
2之折射率為n1=1.502、n2=1.575、n3=1.788,這說明了使用具有不同傾斜角度的相同材料進行斜向蒸鍍會影響不同折射率方向之數值變化。
On the other hand, oblique evaporation of the same material at different angles α will also obtain different values in different refractive index directions. For example, the same material ZrO2 is evaporated obliquely at two different angles α (for example, one α=30°, the other α=65°) and the respective
第4圖為根據本揭露之一些實施例的光學元件100的正向蒸鍍過程之示意圖。如第4圖所示,蒸鍍源900之蒸鍍方向沿著軸B延伸。在正向蒸鍍的過程中,基材110之第一表面112上任一點的法線方向(軸A)與蒸鍍方向(軸B)平行。隨後,第二無機氧化物膜對130被蒸鍍在第一無機氧化物膜對120上方。在一些實施例中,正向蒸鍍製作無機氧化物膜對為1對或是2對以上。在一些實施例中,對基材110正向蒸鍍之步驟S102係採用熱蒸鍍製程、電子槍蒸鍍製程、雷射蒸鍍製程、濺鍍製程中之至少一者,但本揭露並不以此為限。FIG. 4 is a schematic diagram of the forward evaporation process of the
第5A圖為根據本揭露之一些實施例的光學元件100之示意圖。在一些實施例中,對基材110斜向蒸鍍之步驟S101進一步包含沿著傾斜軸向將另一無機氧化物(例如,膜層124)蒸鍍於無機氧化物(例如,膜層122)上。亦即,膜層122及膜層124的材料不同。請配合參照第3B圖及第5A圖,膜層122及膜層124之各別的斜向蒸鍍角度α及厚度d可以依照光學元件100之偏光功能需求而做調整。由膜層122及膜層124所組成的第一無機氧化物膜對120的偏光效果將優異於只具有單層材料所組成之第一無機氧化物膜對120的偏光效果。FIG. 5A is a schematic diagram of an
舉例來說,以斜向蒸鍍製作具有異質接面的薄膜元件為例,膜層122在基材110上被沿著特定方向排列。此特定排列方向可以具有傾斜角度(可以對應為前述討論之傾斜角度β)。隨後,在膜層122(例如,材料DPVBi) 上方以斜向蒸鍍沈積膜層124(例如,材料Alq3),以製作第二層具有特定排列方向之傾斜磊晶柱結構126。在完成複數個第一無機氧化物膜對120之斜向蒸鍍後,可接著在124第一無機氧化物膜對120上方正向蒸鍍第二無機氧化物膜對130結構。在一些實施例中,斜向蒸鍍所製作的第一無機氧化物膜對120數目可以為1對或2對以上。For example, taking oblique evaporation to fabricate a thin film device with a heterojunction as an example, the film layers 122 are arranged along a specific direction on the
隨後,可以藉由分析結構的偏振度P以判斷此種具有兩種不同角度β之磊晶柱結構126之偏光性。偏振度P可以藉由關係式:
獲得。其中I∥與I⊥分別代表平行方向之光強度與垂直方向光強度。以前述的DPVBi(膜層122)與Alq3(膜層124)所組成的膜對舉例來說,當膜層124的厚度為500 Å並且膜層122的厚度為200 Å時,其I∥與I⊥峰值比例(即偏振度P)為13.1236。當膜層124的厚度為400 Å並且膜層122的厚度為300 Å時,其I∥與I⊥峰值比例為24.3816。當膜層124的厚度為300 Å並且膜層122的厚度為400 Å時,其I∥與I⊥峰值比例為9.3273。由前述可知,膜層124的厚度與膜層122的厚度將影響偏光薄膜的偏振度,同時此種具有兩種不同角度β之磊晶柱結構126之偏振度也高於只具有單層磊晶柱結構126之偏振度。因此,藉由調整具有兩種不同角度β之磊晶柱結構126之個別角度β及厚度的光學元件可以藉此提升其偏光效果。
Subsequently, the polarization of the
請參照第4圖及第5A圖,在一些實施例中,對基材110正向蒸鍍之步驟S102包含沿著正向軸向將兩無機氧化物(例如,第5A圖所示的膜層132及膜層134)依序蒸鍍於第一無機氧化物膜對120上,其中正向軸向係平行於表面(例如,第一表面112)上的法線方向(例如,於第4圖中軸A平行於軸B)。具有第二無機氧化物膜對130之光學元件100其可以具有抗反射功能。舉例來說,將兩種具有不同折射率之材料(例如,膜層132及膜層134)相互交疊地蒸鍍在第一無機氧化物膜對120上時(如第5A圖所示之結構),若兩種不同材料之生長結構滿足條件
與
的關係(其中入射光波長λ、n
0為介質折射率(例如,空氣折射率)、n
s為基材折射率),則由此兩材料所組成的無機氧化物膜對將具有良好的抗反射功效。在一些實施例中,正向蒸鍍所製作的第二無機氧化物膜對130數目可以為1對或2對以上。
Please refer to FIG. 4 and FIG. 5A. In some embodiments, the step S102 of forward evaporation on the
由前述內容可知,繪示於第5A圖中的實施例結合了前述討論的具有膜層132及膜層134之第二無機氧化物膜對130以及具有膜層122及膜層124之第一無機氧化物膜對120。在一些實施例中,當具有波長λ且具有P偏振光及S偏振光之光線由基材110穿入光學元件100並通過第一無機氧化物膜對120時,第一無機氧化物膜對120將會對應P偏振光及S偏振光產生不同的折射係數。此現象將會使得穿過第一無機氧化物膜對120而抵達第二無機氧化物膜對130之P偏振光及S偏振光比率不同。並且藉由第二無機氧化物膜對130的抗反射效果,可以進一步過濾通過第二無機氧化物膜對130的光線偏振方向。As can be seen from the foregoing, the embodiment shown in FIG. 5A combines the second inorganic
具體來說,在一些實施例中,當膜層122及膜層124對P偏振光的折射率n
p相同時,P偏振光在通過第一無機氧化物膜對120將不發生折射率變化,因此第一無機氧化物膜對120對P偏振光會具有高穿透效果。換句話說,根據上文的關係式,可以通過控制折射方向n1、n3及角度β去控制材料對於P偏振光的折射率。同時,當膜層122及膜層124對S偏振光的折射率n
s不同,並且其材料厚度d滿足四分之一的光波長λ時,對於S偏振光會有高反射效果。換句話說,根據上文的關係式,可以通過控制折射方向n2及角度β去控制材料對於S偏振光的折射率。總結來說,第一無機氧化物膜對包含一或多個膜層122以及124膜層,並且膜層122與膜層124對P偏振光具有第一折射率,並對S偏振光分別具有相異之第二折射率與第三折射率。如此一來,通過第一無機氧化物膜對120之P偏振光比率可以高於S偏振光比率。隨後,第二無機氧化物膜對130將會因為相應的材料厚度d(即,材料厚度d滿足四分之一的光波長λ的條件)進一步提高P偏振光的穿透率最終,具有P偏振光及S偏振光之光線由第二無機氧化物膜對130的一側穿出時,S偏振光的比例將會大幅被降低,只保留P偏振光,以使光學元件100具有良好的偏光功效。
Specifically, in some embodiments, when the refractive index n p of the
請參照第5A圖,在一些實施例中,其所描繪的光學元件100之基材110可以為聚甲基丙烯酸甲酯(Poly(methyl methacrylate), PMMA)或玻璃,但本揭露並不以此為限。並且,光學元件100用於製作第一無機氧化物膜對120之膜層122為ZrO
2,膜層124為TiO
2,並且用於製作第二無機氧化物膜對130之膜層132為TiO
2,膜層134為SiO
2,但本揭露並不以此為限。
Please refer to FIG. 5A, in some embodiments, the
第5B圖為根據本揭露之一些實施例的光學元件200之示意圖。請同時參照第3B圖及第5B圖,在一些實施例中,對基材110斜向蒸鍍之步驟S101進一步包含沿著傾斜軸向將相同之無機氧化物以不同的角度β交替地蒸鍍以形成包含膜層222及膜層224之第一無機氧化物膜對220。在一些實施例中,此具有不同角度β之結構可以藉由在斜向蒸鍍製程中旋轉基材110方向或者改變傾斜角度α以達成,但本揭露並不以此為限。舉例來說,參照前述內容可知相同材料(例如,ZrO
2)以不同角度進行斜向蒸鍍可以獲得不同折射率。因此,也可以利用具有不同傾斜角度α之相同材料達到使用兩種不同材料製成第一無機氧化物膜對220所可以完成的效果。其光學原理與前述第5A圖之內容類似,以調整不同折射方向之折射率n1、n2、n3及角度β去控制偏光效果,並且在此為了簡單明瞭而不再重複敘述。
FIG. 5B is a schematic diagram of an
請參照第5B圖,在一些實施例中,其所描繪的光學元件200之基材110可以為聚甲基丙烯酸甲酯(Poly(methyl methacrylate), PMMA)或玻璃,但本揭露並不以此為限。並且,光學元件200用於製作第一無機氧化物膜對220之膜層222為Ta
2O
5,膜層224也為Ta
2O
5,但本揭露並不以此為限。其中,膜層222與膜層224之角度β(請參照第3B圖與第5B圖)不相同。此外,其用於製作第二無機氧化物膜對130之膜層132為TiO
2,膜層134為SiO
2,但本揭露並不以此為限。
Please refer to FIG. 5B. In some embodiments, the
請參照第2圖、第5A圖及第5B圖,前述內容僅只為本揭露的一些實施例。舉例來說,製造光學元件的方法M1也可以被實施在第一表面112或第二表面114的任意一者上或者同時被實施在兩者上,但本揭露並不以此為限。具體來說,在一些實施例中,製造光學元件的方法M1進一步包含對基材110斜向蒸鍍,以在基材110的另一表面上(例如,第二表面114)形成至少一個第三無機氧化物膜對140;對基材110正向蒸鍍,以在至少一個第三無機氧化物膜對140上形成至少一個第四無機氧化物膜對150。在一些實施例中,表面(例如,第一表面112)與另一表面(例如,第二表面114)分別位於基材110的相反兩側,但本揭露並不以此為限。第三無機氧化物膜對140與第四無機氧化物膜對150的任一者的材料包含金屬元素及矽中之至少一者。在一些實施例中,無機氧化物膜對之成分組成可以以化學式表示為I
xO
y或I
aO
b。其中I可以為金屬元素(例如,Ti、Zr、Al、Ta、Zn、Cr、Sn、In、Fe、Nb、Mg等)與Si元素,但本揭露並不以此為限。並且,在一些實施例中,第三無機氧化物膜對140與第四無機氧化物膜對150的任一者的材料包含WO
3、MgF
2、Si
3N
4、SiON、SiO
2、TiO
2、ZrO
2、Al
2O
3、ZnO
2、Cr
2O
3、SnO、In
2O
3、Ta
2O
5、Fe
2O
3、NbO
5中之至少一者。在一些實施例中,第三無機氧化物膜對140可以類似於第一無機氧化物膜對120,並且第四無機氧化物膜對150可以類似於第二無機氧化物膜對130,但本揭露並不以此為限。
Please refer to FIG. 2 , FIG. 5A and FIG. 5B , the foregoing contents are only some embodiments of the present disclosure. For example, the method M1 for manufacturing an optical element may also be implemented on any one of the
以上對於本揭露之具體實施方式之詳述,可以明顯地看出,於本揭露的製造光學元件的方法中,同時具有第一無機氧化物膜對及第二無機氧化物膜對之光學元件可同時具有偏光功能及抗反射特性。與目前習知技術相比,本揭露所提供的製造光學元件的方法省去了貼合偏光膜片之製程,其可以與抗反射層一同製作以達到節省製造成本的效果。並且,因為本揭露所提供之方法利用蒸鍍技術製作,因此可以依照需要規格製作在不同基材表面上,相對於目前習知的貼合製程具有更為廣泛的應用範圍。此外,膜片(膜對)的厚度可以藉由蒸鍍技術精準的控制,使得由本揭露之方法所製作出的光學元件薄膜(例如,偏光膜)具有奈米至微米等級的厚度。其相對於習知貼膜所使用之膜厚(例如,在毫米至微米等級)更薄,在更小體積內使光學元件達到相同或更佳的光學性能。另外,本揭露之方法也改善了貼膜製程容易造成的應力問題以及貼膜平整度問題,並且因此改善通過光學元件之光路徑,使光學元件具有更好的光學效果。From the above detailed description of the specific embodiments of the present disclosure, it can be clearly seen that in the method for manufacturing an optical element of the present disclosure, the optical element having both the first inorganic oxide film pair and the second inorganic oxide film pair can be At the same time, it has polarizing function and anti-reflection characteristics. Compared with the current conventional technology, the method for manufacturing the optical element provided by the present disclosure omits the process of attaching the polarizing film, which can be manufactured together with the anti-reflection layer to achieve the effect of saving the manufacturing cost. Moreover, because the method provided by the present disclosure is produced by evaporation technology, it can be produced on the surface of different substrates according to the required specifications, and has a wider application range than the conventional bonding process. In addition, the thickness of the film (film pair) can be precisely controlled by evaporation technology, so that the optical element film (eg, polarizing film) produced by the disclosed method has a thickness of nanometers to micrometers. It is thinner than the film thickness (for example, on the order of millimeters to microns) used by conventional films, and enables optical elements to achieve the same or better optical performance in a smaller volume. In addition, the method disclosed in the present disclosure also improves the stress problem easily caused by the film-attaching process and the flatness of the film-attachment, and thus improves the light path passing through the optical element, so that the optical element has better optical effects.
前文概述了若干實施例之特徵,使得熟習此項技術者可較佳地理解本揭露之態樣。熟習此項技術者應瞭解,他們可容易地使用本揭露作為設計或修改用於實現相同目的及/或達成本文中所介紹之實施例之相同優勢的其他製程及結構的基礎。熟習此項技術者亦應認識到,此些等效構造不脫離本揭露之精神及範疇,且他們可在不脫離本揭露之精神及範疇的情況下於本文作出各種改變、代替及替換。The foregoing outlines features of several embodiments so that those skilled in the art may better understand aspects of the disclosure. Those skilled in the art should appreciate that they can readily use the present disclosure as a basis for designing or modifying other processes and structures for carrying out the same purposes and/or achieving the same advantages of the embodiments described herein. Those skilled in the art should also realize that such equivalent constructions do not depart from the spirit and scope of the present disclosure, and that they may make various changes, substitutions and substitutions herein without departing from the spirit and scope of the present disclosure.
100,200:光學元件 110:基材 112:第一表面 114:第二表面 120,220:第一無機氧化物膜對 126:磊晶柱結構 127:磊晶柱 130:第二無機氧化物膜對 122,124,132,134,222,224:膜層 140:第三無機氧化物膜對 150:第四無機氧化物膜對 900:蒸鍍源 A,B:軸 d:厚度 M1:方法 k1,k2,k3,x,y,z:方向 S101,S102:步驟 α,β:角度 λ:波長 100,200: Optics 110: Substrate 112: first surface 114: second surface 120,220: the first inorganic oxide film pair 126: Epitaxial column structure 127: epitaxial column 130: the second inorganic oxide film pair 122,124,132,134,222,224: film layer 140: the third inorganic oxide film pair 150: the fourth inorganic oxide film pair 900: evaporation source A,B: axis d: thickness M1: method k1, k2, k3, x, y, z: direction S101, S102: steps α, β: angle λ:wavelength
當結合隨附諸圖閱讀時,得以自以下詳細描述最佳地理解本揭露之態樣。應注意,根據行業上之標準實務,各種特徵未按比例繪製。事實上,為了論述清楚,可任意地增大或減小各種特徵之尺寸。 第1圖為根據本揭露之一些實施例的製造光學元件的方法之示意圖。 第2圖為根據本揭露之一些實施例的光學元件之示意圖。 第3A圖為根據本揭露之一些實施例的光學元件的斜向蒸鍍過程之示意圖。 第3B圖為根據本揭露之一些實施例的光學元件之斜向蒸鍍後光學元件表面的微觀結構示意圖。 第3C圖為根據第3B圖之光學元件的巨觀結構之示意圖。 第4圖為根據本揭露之一些實施例的光學元件的正向蒸鍍過程之示意圖。 第5A圖為根據本揭露之一些實施例的光學元件之示意圖。 第5B圖為根據本揭露之一些實施例的光學元件之示意圖。 Aspects of the present disclosure are best understood from the following Detailed Description when read in conjunction with the accompanying drawings. It should be noted that, in accordance with the standard practice in the industry, various features are not drawn to scale. In fact, the dimensions of the various features may be arbitrarily increased or reduced for clarity of discussion. FIG. 1 is a schematic diagram of a method of manufacturing an optical element according to some embodiments of the present disclosure. FIG. 2 is a schematic diagram of an optical element according to some embodiments of the present disclosure. FIG. 3A is a schematic diagram of an oblique evaporation process of an optical element according to some embodiments of the present disclosure. FIG. 3B is a schematic diagram of the microstructure of the surface of the optical element after oblique evaporation according to some embodiments of the present disclosure. Fig. 3C is a schematic diagram of the macroscopic structure of the optical element according to Fig. 3B. FIG. 4 is a schematic diagram of a forward evaporation process of an optical element according to some embodiments of the present disclosure. FIG. 5A is a schematic diagram of an optical element according to some embodiments of the present disclosure. Figure 5B is a schematic diagram of an optical element according to some embodiments of the present disclosure.
國內寄存資訊(請依寄存機構、日期、號碼順序註記) 無 國外寄存資訊(請依寄存國家、機構、日期、號碼順序註記) 無 Domestic deposit information (please note in order of depositor, date, and number) none Overseas storage information (please note in order of storage country, institution, date, and number) none
M1:方法 M1: method
S101,S102:步驟 S101, S102: steps
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TW202244288A (en) | 2022-11-16 |
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