TWI795972B - 電漿蝕刻裝置 - Google Patents

電漿蝕刻裝置 Download PDF

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Publication number
TWI795972B
TWI795972B TW110140547A TW110140547A TWI795972B TW I795972 B TWI795972 B TW I795972B TW 110140547 A TW110140547 A TW 110140547A TW 110140547 A TW110140547 A TW 110140547A TW I795972 B TWI795972 B TW I795972B
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TW
Taiwan
Prior art keywords
electromagnets
plasma
coil
central axis
radial direction
Prior art date
Application number
TW110140547A
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English (en)
Chinese (zh)
Other versions
TW202209484A (zh
Inventor
橫田聰裕
檜森慎司
大下辰郎
草野周
伊藤悅治
永關一也
Original Assignee
日商東京威力科創股份有限公司
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Publication of TW202209484A publication Critical patent/TW202209484A/zh
Application granted granted Critical
Publication of TWI795972B publication Critical patent/TWI795972B/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • H01J37/32669—Particular magnets or magnet arrangements for controlling the discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6502—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials
    • H10P14/6512—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials by exposure to a gas or vapour
    • H10P14/6514—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials by exposure to a gas or vapour by exposure to a plasma
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
TW110140547A 2015-10-09 2016-10-03 電漿蝕刻裝置 TWI795972B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2015-200877 2015-10-09
JP2015200877A JP6516649B2 (ja) 2015-10-09 2015-10-09 プラズマエッチング方法

Publications (2)

Publication Number Publication Date
TW202209484A TW202209484A (zh) 2022-03-01
TWI795972B true TWI795972B (zh) 2023-03-11

Family

ID=58499854

Family Applications (2)

Application Number Title Priority Date Filing Date
TW110140547A TWI795972B (zh) 2015-10-09 2016-10-03 電漿蝕刻裝置
TW105131838A TWI747844B (zh) 2015-10-09 2016-10-03 電漿蝕刻方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
TW105131838A TWI747844B (zh) 2015-10-09 2016-10-03 電漿蝕刻方法

Country Status (4)

Country Link
US (1) US9978566B2 (https=)
JP (1) JP6516649B2 (https=)
KR (3) KR102630512B1 (https=)
TW (2) TWI795972B (https=)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6516649B2 (ja) * 2015-10-09 2019-05-22 東京エレクトロン株式会社 プラズマエッチング方法
CN108165927B (zh) * 2018-01-03 2020-03-31 京东方科技集团股份有限公司 掩膜版的吸附装置及吸附方法、蒸镀设备及蒸镀方法
US12020898B2 (en) 2019-09-09 2024-06-25 Tokyo Electron Limited Plasma processing system and method of processing substrate
JP2021125504A (ja) * 2020-02-03 2021-08-30 株式会社アルバック プラズマエッチング方法及びプラズマエッチング装置
US12332625B2 (en) * 2020-09-21 2025-06-17 Changxin Memory Technologies, Inc. Method and apparatus for correcting position of wafer and storage medium
US12525458B2 (en) * 2020-11-20 2026-01-13 Lam Research Corporation Plasma uniformity control using a pulsed magnetic field
JP7727714B2 (ja) 2021-03-23 2025-08-21 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
JP7685973B2 (ja) * 2022-05-25 2025-05-30 東京エレクトロン株式会社 基板処理方法及び基板処理装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090250432A1 (en) * 2008-04-07 2009-10-08 Hoffman Daniel J Method of controlling plasma distribution uniformity by time-weighted superposition of different solenoid fields
TW201438100A (zh) * 2013-01-21 2014-10-01 東京威力科創股份有限公司 蝕刻多層膜之方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5932488A (en) * 1996-02-09 1999-08-03 Citizen Watch Co., Ltd. Method of dry etching
US6573190B1 (en) * 1998-11-26 2003-06-03 Hitachi, Ltd. Dry etching device and dry etching method
KR100519676B1 (ko) * 2003-12-23 2005-10-13 어댑티브프라즈마테크놀로지 주식회사 플라즈마소스코일을 갖는 플라즈마챔버 세팅방법
JP4601439B2 (ja) * 2005-02-01 2010-12-22 株式会社日立ハイテクノロジーズ プラズマ処理装置
JP5592098B2 (ja) 2009-10-27 2014-09-17 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
JP6018757B2 (ja) * 2012-01-18 2016-11-02 東京エレクトロン株式会社 基板処理装置
JP5650281B2 (ja) * 2013-06-15 2015-01-07 東京エレクトロン株式会社 プラズマ処理方法、及びプラズマ処理装置
JP6317139B2 (ja) * 2014-03-04 2018-04-25 東京エレクトロン株式会社 プラズマ処理装置のクリーニング方法及びプラズマ処理装置
JP6516649B2 (ja) 2015-10-09 2019-05-22 東京エレクトロン株式会社 プラズマエッチング方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090250432A1 (en) * 2008-04-07 2009-10-08 Hoffman Daniel J Method of controlling plasma distribution uniformity by time-weighted superposition of different solenoid fields
TW201438100A (zh) * 2013-01-21 2014-10-01 東京威力科創股份有限公司 蝕刻多層膜之方法

Also Published As

Publication number Publication date
US9978566B2 (en) 2018-05-22
KR20240014096A (ko) 2024-01-31
JP6516649B2 (ja) 2019-05-22
KR102630512B1 (ko) 2024-01-26
KR102775465B1 (ko) 2025-02-28
TW202209484A (zh) 2022-03-01
US20170103877A1 (en) 2017-04-13
TW201724255A (zh) 2017-07-01
KR102775464B1 (ko) 2025-02-28
KR20240014562A (ko) 2024-02-01
JP2017073518A (ja) 2017-04-13
TWI747844B (zh) 2021-12-01
KR20170042489A (ko) 2017-04-19

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