TWI795646B - 曝光設備、曝光方法、及製造物品的方法 - Google Patents

曝光設備、曝光方法、及製造物品的方法 Download PDF

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Publication number
TWI795646B
TWI795646B TW109119830A TW109119830A TWI795646B TW I795646 B TWI795646 B TW I795646B TW 109119830 A TW109119830 A TW 109119830A TW 109119830 A TW109119830 A TW 109119830A TW I795646 B TWI795646 B TW I795646B
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TW
Taiwan
Prior art keywords
temperature
temperature controller
period
exposure
optical element
Prior art date
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TW109119830A
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English (en)
Chinese (zh)
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TW202109202A (zh
Inventor
宮野皓貴
小泉僚
茂泉純
三上晃司
Original Assignee
日商佳能股份有限公司
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Publication date
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Publication of TW202109202A publication Critical patent/TW202109202A/zh
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Publication of TWI795646B publication Critical patent/TWI795646B/zh

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70883—Environment aspects, e.g. pressure of beam-path gas, temperature of optical system
    • G03F7/70891—Temperature
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70316—Details of optical elements, e.g. of Bragg reflectors, extreme ultraviolet [EUV] multilayer or bilayer mirrors or diffractive optical elements
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70591—Testing optical components
    • G03F7/706—Aberration measurement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Toxicology (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Lens Barrels (AREA)
  • Eyeglasses (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
TW109119830A 2019-06-25 2020-06-12 曝光設備、曝光方法、及製造物品的方法 TWI795646B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2019-117714 2019-06-25
JP2019117714 2019-06-25
JP2020-068731 2020-04-07
JP2020068731A JP6951498B2 (ja) 2019-06-25 2020-04-07 露光装置、露光方法および物品製造方法

Publications (2)

Publication Number Publication Date
TW202109202A TW202109202A (zh) 2021-03-01
TWI795646B true TWI795646B (zh) 2023-03-11

Family

ID=74099408

Family Applications (1)

Application Number Title Priority Date Filing Date
TW109119830A TWI795646B (zh) 2019-06-25 2020-06-12 曝光設備、曝光方法、及製造物品的方法

Country Status (3)

Country Link
JP (2) JP6951498B2 (ja)
KR (1) KR20210000667A (ja)
TW (1) TWI795646B (ja)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5805273A (en) * 1994-04-22 1998-09-08 Canon Kabushiki Kaisha Projection exposure apparatus and microdevice manufacturing method
US20050140947A1 (en) * 2003-12-12 2005-06-30 Canon Kabushiki Kaisha Exposure apparatus and device manufacturing method
TW200923594A (en) * 2007-10-09 2009-06-01 Zeiss Carl Smt Ag Device for controlling temperature of an optical element

Family Cites Families (18)

* Cited by examiner, † Cited by third party
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JPH09232213A (ja) * 1996-02-26 1997-09-05 Nikon Corp 投影露光装置
JPH10199782A (ja) * 1997-01-14 1998-07-31 Canon Inc 投影露光装置
DE19807094A1 (de) * 1998-02-20 1999-08-26 Zeiss Carl Fa Optische Anordnung und Projektionsbelichtungsanlage der Mikrolithographie mit passiver thermischer Kompensation
JP2002373848A (ja) * 2001-06-15 2002-12-26 Canon Inc 基板ホルダの表面状態測定方法及び測定装置
JP2003234276A (ja) * 2002-02-07 2003-08-22 Nikon Corp 露光装置及び光学装置、デバイス製造方法
JP2005051147A (ja) * 2003-07-31 2005-02-24 Nikon Corp 露光方法及び露光装置
KR101328356B1 (ko) * 2004-02-13 2013-11-11 가부시키가이샤 니콘 노광 방법 및 장치, 그리고 디바이스 제조 방법
JP2005311020A (ja) * 2004-04-21 2005-11-04 Nikon Corp 露光方法及びデバイス製造方法
JP5266641B2 (ja) * 2004-08-31 2013-08-21 株式会社ニコン 露光装置及びデバイス製造方法
JP2006073584A (ja) * 2004-08-31 2006-03-16 Nikon Corp 露光装置及び方法並びにデバイス製造方法
US20080204682A1 (en) * 2005-06-28 2008-08-28 Nikon Corporation Exposure method and exposure apparatus, and device manufacturing method
JP2007317847A (ja) * 2006-05-25 2007-12-06 Nikon Corp 露光装置及びデバイス製造方法
US20080049202A1 (en) * 2006-08-22 2008-02-28 Carl Zeiss Smt Ag Projection exposure apparatus for semiconductor lithography
JP2008130827A (ja) * 2006-11-21 2008-06-05 Matsushita Electric Ind Co Ltd 露光装置及び露光方法
DE102008040218A1 (de) * 2007-07-11 2009-01-15 Carl Zeiss Smt Ag Drehbares optisches Element
NL2005449A (en) * 2009-11-16 2012-04-05 Asml Netherlands Bv Lithographic method and apparatus.
KR101679136B1 (ko) * 2012-02-04 2016-11-23 칼 짜이스 에스엠티 게엠베하 마이크로리소그래픽 투영 노광 장치의 동작 방법 및 이러한 장치의 투영 오브젝티브
WO2016087388A1 (en) * 2014-12-02 2016-06-09 Asml Netherlands B.V. Lithographic method and apparatus

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5805273A (en) * 1994-04-22 1998-09-08 Canon Kabushiki Kaisha Projection exposure apparatus and microdevice manufacturing method
US20050140947A1 (en) * 2003-12-12 2005-06-30 Canon Kabushiki Kaisha Exposure apparatus and device manufacturing method
TW200923594A (en) * 2007-10-09 2009-06-01 Zeiss Carl Smt Ag Device for controlling temperature of an optical element

Also Published As

Publication number Publication date
TW202109202A (zh) 2021-03-01
JP2021185442A (ja) 2021-12-09
JP6951498B2 (ja) 2021-10-20
JP2021005073A (ja) 2021-01-14
JP7457678B2 (ja) 2024-03-28
KR20210000667A (ko) 2021-01-05

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