TWI793084B - 具有高氮化矽選擇性的化學機械拋光液 - Google Patents
具有高氮化矽選擇性的化學機械拋光液 Download PDFInfo
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- TWI793084B TWI793084B TW106132410A TW106132410A TWI793084B TW I793084 B TWI793084 B TW I793084B TW 106132410 A TW106132410 A TW 106132410A TW 106132410 A TW106132410 A TW 106132410A TW I793084 B TWI793084 B TW I793084B
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- chemical mechanical
- mechanical polishing
- silicon nitride
- polishing
- carboxyl groups
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- 238000005498 polishing Methods 0.000 title claims abstract description 64
- 229910052581 Si3N4 Inorganic materials 0.000 title claims abstract description 34
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 title claims abstract description 34
- 239000000126 substance Substances 0.000 title claims abstract description 22
- 239000002002 slurry Substances 0.000 title abstract description 5
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 claims abstract description 13
- 150000001875 compounds Chemical class 0.000 claims abstract description 11
- 239000002245 particle Substances 0.000 claims abstract description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 31
- 235000012239 silicon dioxide Nutrition 0.000 claims description 15
- 239000000377 silicon dioxide Substances 0.000 claims description 15
- 239000007788 liquid Substances 0.000 claims description 13
- 239000012530 fluid Substances 0.000 claims description 6
- 229940100484 5-chloro-2-methyl-4-isothiazolin-3-one Drugs 0.000 claims description 4
- ONIBWKKTOPOVIA-UHFFFAOYSA-N Proline Natural products OC(=O)C1CCCN1 ONIBWKKTOPOVIA-UHFFFAOYSA-N 0.000 claims description 4
- 230000000844 anti-bacterial effect Effects 0.000 claims description 4
- 239000003899 bactericide agent Substances 0.000 claims description 4
- -1 carboxyl group compound Chemical class 0.000 claims description 4
- DHNRXBZYEKSXIM-UHFFFAOYSA-N chloromethylisothiazolinone Chemical compound CN1SC(Cl)=CC1=O DHNRXBZYEKSXIM-UHFFFAOYSA-N 0.000 claims description 4
- BEGLCMHJXHIJLR-UHFFFAOYSA-N methylisothiazolinone Chemical compound CN1SC=CC1=O BEGLCMHJXHIJLR-UHFFFAOYSA-N 0.000 claims description 4
- SOOPBZRXJMNXTF-UHFFFAOYSA-N 2,6-Piperidinedicarboxylic acid Chemical compound OC(=O)C1CCCC(C(O)=O)N1 SOOPBZRXJMNXTF-UHFFFAOYSA-N 0.000 claims description 2
- HPGGRRWTQXPMHJ-UHFFFAOYSA-N 3-iodoprop-1-ynyl carbamate Chemical compound NC(=O)OC#CCI HPGGRRWTQXPMHJ-UHFFFAOYSA-N 0.000 claims description 2
- NRSBQSJHFYZIPH-UHFFFAOYSA-N 4-carboxypyrrolidin-1-ium-2-carboxylate Chemical compound OC(=O)C1CNC(C(O)=O)C1 NRSBQSJHFYZIPH-UHFFFAOYSA-N 0.000 claims description 2
- WSDISUOETYTPRL-UHFFFAOYSA-N dmdm hydantoin Chemical compound CC1(C)N(CO)C(=O)N(CO)C1=O WSDISUOETYTPRL-UHFFFAOYSA-N 0.000 claims description 2
- 230000000855 fungicidal effect Effects 0.000 claims description 2
- 239000000417 fungicide Substances 0.000 claims description 2
- SRJOCJYGOFTFLH-UHFFFAOYSA-N isonipecotic acid Chemical compound OC(=O)C1CCNCC1 SRJOCJYGOFTFLH-UHFFFAOYSA-N 0.000 claims description 2
- HXEACLLIILLPRG-RXMQYKEDSA-N l-pipecolic acid Natural products OC(=O)[C@H]1CCCCN1 HXEACLLIILLPRG-RXMQYKEDSA-N 0.000 claims description 2
- XJLSEXAGTJCILF-UHFFFAOYSA-N nipecotic acid Chemical compound OC(=O)C1CCCNC1 XJLSEXAGTJCILF-UHFFFAOYSA-N 0.000 claims description 2
- HXEACLLIILLPRG-UHFFFAOYSA-N pipecolic acid Chemical compound OC(=O)C1CCCCN1 HXEACLLIILLPRG-UHFFFAOYSA-N 0.000 claims description 2
- PTLWNCBCBZZBJI-UHFFFAOYSA-N piperidine-2,3-dicarboxylic acid Chemical compound OC(=O)C1CCCNC1C(O)=O PTLWNCBCBZZBJI-UHFFFAOYSA-N 0.000 claims description 2
- WXUOEIRUBILDKO-UHFFFAOYSA-N piperidine-2,4-dicarboxylic acid Chemical compound OC(=O)C1CCNC(C(O)=O)C1 WXUOEIRUBILDKO-UHFFFAOYSA-N 0.000 claims description 2
- YWWGOKNLNRUDAC-UHFFFAOYSA-N piperidine-3,5-dicarboxylic acid Chemical compound OC(=O)C1CNCC(C(O)=O)C1 YWWGOKNLNRUDAC-UHFFFAOYSA-N 0.000 claims description 2
- 150000003053 piperidines Chemical class 0.000 claims description 2
- JAEIBKXSIXOLOL-UHFFFAOYSA-N pyrrolidin-1-ium-3-carboxylate Chemical compound OC(=O)C1CCNC1 JAEIBKXSIXOLOL-UHFFFAOYSA-N 0.000 claims description 2
- 150000003235 pyrrolidines Chemical class 0.000 claims description 2
- WJRBRSLFGCUECM-UHFFFAOYSA-N hydantoin Chemical compound O=C1CNC(=O)N1 WJRBRSLFGCUECM-UHFFFAOYSA-N 0.000 claims 1
- 229940091173 hydantoin Drugs 0.000 claims 1
- NYCVCXMSZNOGDH-UHFFFAOYSA-N pyrrolidine-1-carboxylic acid Chemical class OC(=O)N1CCCC1 NYCVCXMSZNOGDH-UHFFFAOYSA-N 0.000 claims 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 abstract description 8
- 239000000758 substrate Substances 0.000 abstract description 7
- 230000007547 defect Effects 0.000 abstract description 4
- 230000000052 comparative effect Effects 0.000 description 5
- 238000000034 method Methods 0.000 description 4
- SIOXPEMLGUPBBT-UHFFFAOYSA-N picolinic acid Chemical compound OC(=O)C1=CC=CC=N1 SIOXPEMLGUPBBT-UHFFFAOYSA-N 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- VMAQYKGITHDWKL-UHFFFAOYSA-N 5-methylimidazolidine-2,4-dione Chemical compound CC1NC(=O)NC1=O VMAQYKGITHDWKL-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- WNLRTRBMVRJNCN-UHFFFAOYSA-N adipic acid Chemical compound OC(=O)CCCCC(O)=O WNLRTRBMVRJNCN-UHFFFAOYSA-N 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- JVTAAEKCZFNVCJ-UHFFFAOYSA-N lactic acid Chemical compound CC(O)C(O)=O JVTAAEKCZFNVCJ-UHFFFAOYSA-N 0.000 description 2
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- WYVVKGNFXHOCQV-UHFFFAOYSA-N 3-iodoprop-2-yn-1-yl butylcarbamate Chemical compound CCCCNC(=O)OCC#CI WYVVKGNFXHOCQV-UHFFFAOYSA-N 0.000 description 1
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 description 1
- PVNIIMVLHYAWGP-UHFFFAOYSA-N Niacin Chemical compound OC(=O)C1=CC=CN=C1 PVNIIMVLHYAWGP-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 239000006061 abrasive grain Substances 0.000 description 1
- 235000011054 acetic acid Nutrition 0.000 description 1
- 239000001361 adipic acid Substances 0.000 description 1
- 235000011037 adipic acid Nutrition 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 150000001735 carboxylic acids Chemical class 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- MUYSADWCWFFZKR-UHFFFAOYSA-N cinchomeronic acid Chemical compound OC(=O)C1=CC=NC=C1C(O)=O MUYSADWCWFFZKR-UHFFFAOYSA-N 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- RWGFKTVRMDUZSP-UHFFFAOYSA-N cumene Chemical compound CC(C)C1=CC=CC=C1 RWGFKTVRMDUZSP-UHFFFAOYSA-N 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- MPFLRYZEEAQMLQ-UHFFFAOYSA-N dinicotinic acid Chemical compound OC(=O)C1=CN=CC(C(O)=O)=C1 MPFLRYZEEAQMLQ-UHFFFAOYSA-N 0.000 description 1
- WJJMNDUMQPNECX-UHFFFAOYSA-N dipicolinic acid Chemical compound OC(=O)C1=CC=CC(C(O)=O)=N1 WJJMNDUMQPNECX-UHFFFAOYSA-N 0.000 description 1
- 235000019253 formic acid Nutrition 0.000 description 1
- 125000000623 heterocyclic group Chemical group 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- TWBYWOBDOCUKOW-UHFFFAOYSA-N isonicotinic acid Chemical compound OC(=O)C1=CC=NC=C1 TWBYWOBDOCUKOW-UHFFFAOYSA-N 0.000 description 1
- MGIYRDNGCNKGJU-UHFFFAOYSA-N isothiazolinone Chemical compound O=C1C=CSN1 MGIYRDNGCNKGJU-UHFFFAOYSA-N 0.000 description 1
- 239000004310 lactic acid Substances 0.000 description 1
- 235000014655 lactic acid Nutrition 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- MJIVRKPEXXHNJT-UHFFFAOYSA-N lutidinic acid Chemical compound OC(=O)C1=CC=NC(C(O)=O)=C1 MJIVRKPEXXHNJT-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000003002 pH adjusting agent Substances 0.000 description 1
- WLJVXDMOQOGPHL-UHFFFAOYSA-N phenylacetic acid Chemical class OC(=O)CC1=CC=CC=C1 WLJVXDMOQOGPHL-UHFFFAOYSA-N 0.000 description 1
- 150000003222 pyridines Chemical class 0.000 description 1
- JLUIOEOHOOLSJC-UHFFFAOYSA-N pyrrole-2,5-dicarboxylic acid Chemical compound OC(=O)C1=CC=C(C(O)=O)N1 JLUIOEOHOOLSJC-UHFFFAOYSA-N 0.000 description 1
- WRHZVMBBRYBTKZ-UHFFFAOYSA-N pyrrole-2-carboxylic acid Chemical compound OC(=O)C1=CC=CN1 WRHZVMBBRYBTKZ-UHFFFAOYSA-N 0.000 description 1
- DOYOPBSXEIZLRE-UHFFFAOYSA-N pyrrole-3-carboxylic acid Chemical compound OC(=O)C=1C=CNC=1 DOYOPBSXEIZLRE-UHFFFAOYSA-N 0.000 description 1
- 150000003233 pyrroles Chemical class 0.000 description 1
- ZKXSPYPKBXRBNP-UHFFFAOYSA-N pyrrolidine-2,5-dicarboxylic acid Chemical compound OC(=O)C1CCC(C(O)=O)N1 ZKXSPYPKBXRBNP-UHFFFAOYSA-N 0.000 description 1
- GJAWHXHKYYXBSV-UHFFFAOYSA-N quinolinic acid Chemical compound OC(=O)C1=CC=CN=C1C(O)=O GJAWHXHKYYXBSV-UHFFFAOYSA-N 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/02—Etching, surface-brightening or pickling compositions containing an alkali metal hydroxide
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
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Abstract
本發明旨在提供一種具有高氮化矽選擇性的化學機械拋光液,其含有研磨顆粒及含一個或多個羧基基團的化合物。本發明具有較高的SiN拋光速度和較低的TEOS拋光速度,具有較高的SiN/TEOS的拋光速率選擇比;使用本發明可大大減少基板表面上的氧化物線路中的缺陷,本發明具有優異的市場應用前景。
Description
本發明涉及一種化學機械拋光液領域,尤指一種具有高氮化矽選擇性的化學機械拋光液。
在半導體裝置的生產過程中,其各個階段都要進行去除氮化矽層的步驟,例如在形成元素分離結構的步驟中,需要除去作為阻擋出的氮化矽層。但是迄今為止,這種氮化矽的去除步驟通常需要在約150℃的高溫下,通過使用例如磷酸/硝酸混合溶液的濕法刻蝕處理進行,很少採用含有磨粒的拋光步驟;又,在隔離半導體器件各元件的淺溝槽隔離(STI)製程中,其中,需要在矽基板上形成氮化矽層,經由蝕刻或微影法形成淺溝槽,並沉積介電層以填充這些溝槽,由於以此方式形成的溝槽或線路深度的變化,通常需要將過量的介電材料沉積在基板頂部上以確保所有溝槽完全填滿,然後通過化學機械平坦化製程來移除過量的介電材料(例如氧化物) 以暴露出氮化矽層,當氮化矽層暴露出來時,化學機械拋光系統的基板的最大面積覆蓋氮化矽,氮化矽必須隨後進行拋光以獲得高度平坦且均勻的表面。 目前,對氮化矽層拋光的研究眾多,例如CN102604541,提出利用二氧化矽顆粒,芳基二羧酸、苯乙酸類化合物,來提高SiN與oxide的選擇比,但其Oxide拋光速度較高,而SiN/TEOS選擇比相對較低;又如CN1796482提出通過添加甲酸、乙酸、草酸、己二酸和乳酸中至少一種形成85%水溶液,來提高SiN的拋光速度,及SiN與Oxide的選擇比,但是單純地提高SiN的速度,並未涉及同時改變Oxide拋光速率;CN101906270提供了一種拋光液,其中用含有環狀機構的含氮化合物來提高拋光液的穩定性、存儲時間和使用壽命,但不涉及材料的拋光效果。 可以看出,在以往的方法中,一直強調氧化物拋光優先於氮化矽拋光的拋光原則,因此,氮化矽層通常在化學機械平坦化製程期間用作終止層。這是因為在氮化矽層暴露後,基材整體的拋光速率會降低。但是,隨著蝕刻技術的進步,氧化物線寬變得更小,進而期望所利用的拋光系統具有對氮化矽的拋光優先於對氧化物的拋光的選擇性,這使得形成於基板表面上的氧化物線路中的缺陷減至最少。因此,尋求一種具有對氮化矽的拋光優先於對氧化物的拋光的選擇性的拋光液是本領域亟待解決的問題。
為解決上述問題,本發明提出一種具有高氮化矽選擇性的化學機械拋光液,該拋光液可以提供較高的SiN拋光速度和較低的TEOS拋光速度,具有較高的SiN/TEOS的拋光速率選擇比。 具體地,本發明提供一種具有高氮化矽選擇性的化學機械拋光液,其中,含有研磨顆粒及含一個或多個羧基基團的化合物。 其中,所述研磨顆粒為二氧化矽顆粒。 其中,所述研磨顆粒的重量百分比濃度較佳為0.5~8wt%,較佳為1%~5wt%。 其中,所述含一個或多個羧基基團的化合物包括吡啶化合物、呱啶化合物、吡咯烷化合物或吡咯化合物及其衍生物中的一種或多種。 較佳地,所述含一個或多個羧基基團的化合物包括2-羧基吡啶、3-羧基吡啶、4-羧基吡啶、2,3-二羧基吡啶、2,4-二羧基吡啶、2,6-二羧基吡啶,3,5-二羧基吡啶、2-羧基呱啶,3-羧基呱啶,4-羧基呱啶,2,3-二羧基呱啶,2,4-二羧基呱啶,2,6-二羧基呱啶,3,5-二羧基呱啶,2-羧基吡咯烷,3-羧基吡咯烷,2,4-二羧基吡咯烷,2,5-二羧基吡咯烷,2-羧基吡咯,3-羧基吡咯,2,5-二羧基吡咯,3,4-二羧基吡啶等中的一種或多種。 其中,所述含一個或多個羧基基團的化合物的重量百分比濃度較佳為0.01~0.5wt%,較佳為0.01~0.3wt%。 其中,所述化學機械拋光液的pH值大於所述含一個或多個羧基基團的化合物的pKa1的1.5個單位,並且小於6.5。 其中,所述化學機械拋光液中還含有pH調節劑及殺菌劑。 其中,所述pH調節劑包括HNO3
、KOH、K2
HPO4
和KH2
PO4
中的一種或多種。 其中,所述殺菌劑包括5-氯-2-甲基-4-異噻唑啉-3-酮(CIT),2-甲基-4-異噻唑啉酮(MIT),1,2-苯丙異噻唑啉酮(BIT),碘代丙炔基氨基甲酸酯(IPBC), 1,3-二羥甲基-5,5-甲基海因(DMDMH)等中的一種或多種。 其中,所述殺菌劑的重量百分比濃度為0.02-0.2wt%。 與現有技術相比較,本發明的積極進步效果在於: 1) 本發明具有較高的SiN拋光速度和較低的TEOS拋光速度,具有較高的SiN/TEOS的拋光速率選擇比; 2) 本發明可大大減少基板表面上的氧化物線路中的缺陷。
具體實施例以及對比按表1中所給配方,將所有組分溶解混合均勻,用水補足重量百分比至100%。用pH調節劑調節pH至期望值。 表1 對比例及實施例的具體組分及其含量
按表1配方的拋光液根據下述實驗條件進行實驗。 具體拋光條件:Mirra機台,IC1010pad,轉速93/87rpm,拋光壓力:1.5psi。拋光流量150ml/min。在Mirra機台中輸入上述參數,對8吋氮化矽、二氧化矽進行1min拋光,清洗、乾燥、檢測並得到拋光結果。 從對比例1的結果可以看出,用單純的SiO2
進行拋光,氮化矽的拋光速度很低,二氧化矽的拋光速度卻比較高,氮化矽與二氧化矽的選擇性是反向的。從實施例與對比例2和對比例3的結果看到,相較於含有其他羧酸以及其他雜環酸的拋光漿料,本發明的氮化矽速度地提升幅度大,並且降低了二氧化矽的拋光速度,具有很高的氮化矽與二氧化矽的拋光速率選擇比。從實施例與對比例4的結果,pH在大於2-羧基吡啶的Pka1(1.0) 1.5單位的情況下,氮化矽的拋光速度較高,二氧化矽的速度較低,氮化矽與二氧化矽的拋光速率選擇比高。本專利中羧基化合物在分子結構中同時帶有羧基以及含氮結構,在pH大於1.5單位Pka1時,含氮結構與二氧化矽研磨顆粒相吸引,使得羧基結構暴露在外,遇到氮化矽表面後,由於異性電荷相吸,這樣大大增加了研磨顆粒和氮化矽表面的相互作用,降低了研磨顆粒與二氧化矽晶片表面的相互作用,增加了氮化矽晶片的拋光速度,同時降低了二氧化矽的拋光速度。利用高的氮化矽/二氧化矽選擇比的拋光液,可以降低STI拋光中氮化矽作為終止層帶來的缺陷。另外在用二氧化矽作為終止層的結構中,使用高的氮化矽/二氧化矽選擇比的拋光液,可利用高的氮化矽的去除效率,大大提高了整體的拋光效率。 應當注意的是,本發明的實施例有較佳的實施性,且並非對本發明作任何形式的限制,任何熟悉該領域的技術人員可能利用上述揭示的技術內容變更或修飾為等同的有效實施例,但凡未脫離本發明技術方案的內容,依據本發明的技術實質對以上實施例所作的任何修改或等同變化及修飾,均仍屬於本發明技術方案的範圍內。
Claims (8)
- 一種具有高氮化矽選擇性的化學機械拋光液,其特徵在於,由二氧化矽、含一個或多個羧基基團的化合物、pH調節劑及殺菌劑組成,其中所述化學機械拋光液的pH值大於所述含一個或多個羧基基團的化合物的pKa1的1.5個單位,並且小於6.5;所述含一個或多個羧基基團的化合物為呱啶化合物、吡咯烷化合物及其衍生物中的一種或多種;及所述含一個或多個羧基基團的化合物為2-羧基呱啶、3-羧基呱啶、4-羧基呱啶、2,3-二羧基呱啶、2,4-二羧基呱啶、2,6-二羧基呱啶、3,5-二羧基呱啶、2-羧基吡咯烷、3-羧基吡咯烷、2,4-二羧基吡咯烷、2,5-二羧基吡咯烷中的一種或多種。
- 如請求項1所述的化學機械拋光液,其特徵在於,所述研磨顆粒的重量百分比濃度為0.5~8wt%。
- 如請求項2所述的化學機械拋光液,其特徵在於,所述研磨顆粒的重量百分比濃度為1%~5wt%。
- 如請求項1所述的化學機械拋光液,其特徵在於,所述含一個或多個羧基基團的化合物的重量百分比濃度為0.01~0.5wt%。
- 如請求項4所述的化學機械拋光液,其特徵在於,所述含一個或多個 羧基基團的化合物的重量百分比濃度為0.01~0.3wt%。
- 如請求項5所述的化學機械拋光液,其特徵在於,所述pH調節劑包括HNO3、KOH、K2HPO4和KH2PO4中的一種或多種。
- 如請求項5所述的化學機械拋光液,其特徵在於,所述殺菌劑包括5-氯-2-甲基-4-異噻唑啉-3-酮(CIT),2-甲基-4-異噻唑啉酮(MIT),1,2-苯丙異噻唑啉酮(BIT),碘代丙炔基氨基甲酸酯(IPBC),1,3-二羥甲基-5,5-甲基海因(DMDMH)中的一種或多種。
- 如請求項7所述的化學機械拋光液,其特徵在於,所述殺菌劑的重量百分比濃度為0.02-0.2wt%。
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