TWI791128B - Component transfer method and transfer board used in the method - Google Patents

Component transfer method and transfer board used in the method Download PDF

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TWI791128B
TWI791128B TW108132670A TW108132670A TWI791128B TW I791128 B TWI791128 B TW I791128B TW 108132670 A TW108132670 A TW 108132670A TW 108132670 A TW108132670 A TW 108132670A TW I791128 B TWI791128 B TW I791128B
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transfer
adhesive film
mentioned
transfer plate
micro
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TW202042416A (en
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須本洋一
藤岡正美
山口晶也
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日商小村科技股份有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/52—Mounting semiconductor bodies in containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
    • H01L21/67721—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations the substrates to be conveyed not being semiconductor wafers or large planar substrates, e.g. chips, lead frames
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93—Batch processes
    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68368—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used in a transfer process involving at least two transfer steps, i.e. including an intermediate handle substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/93—Batch processes
    • H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips

Abstract

無。

Description

元件之移載方法及用於該方法之移載板Component transfer method and transfer board used in the method

本發明係有關於從具有複數個元件〔例如LED(發光二極體)〕之基板(例如晶圓)等將該元件移載至其他物體的元件之移載方法及用於該方法之移載板。The present invention relates to a method of transferring components from a substrate (such as a wafer) having a plurality of components (such as LEDs (light-emitting diodes)) to other objects and a method for transferring the components plate.

近年，使用微LED之顯示器受到注目。此顯示器係以單一長方形小型單元(例如250mm×260mm)形成或將該小型單元縱橫連接而形成。上述小型單元係複數之像素於電路基板縱橫有規則地配置，各像素以紅(R)、綠(G)、藍(B)三色之微LED構成。又，該顯示器按電信號，使各像素之LED發光而得以顯示圖像等。In recent years, displays using micro LEDs have attracted attention. The display is formed by a single rectangular small unit (eg, 250mm×260mm) or by connecting the small units vertically and horizontally. The above-mentioned small units are a plurality of pixels regularly arranged vertically and horizontally on the circuit substrate, and each pixel is composed of red (R), green (G), and blue (B) micro-LEDs. In addition, the display can display images and the like by causing the LEDs of each pixel to emit light according to electrical signals.

上述小型單元之製造通常如下進行。即，首先，將製造有複數個一色微LED的晶圓準備三個色(即三種晶圓)，分別以一個微LED為單位切斷。接著，對一種晶圓，將微LED逐個以晶片安裝機拾取，安裝(移載)至上述電路基板之各像素的位置(例如參照專利文獻1)。藉此，一色微LED之安裝完畢。對剩餘之二色(二種晶圓)進行此安裝。如此進行，可製造上述小型單元。 接著，將此小型單元縱橫連接必要數量，而形成上述顯示器。 ［先前技術文獻］ ［專利文獻］The manufacture of the above-mentioned small cells is generally carried out as follows. That is, firstly, three colors (that is, three types of wafers) are prepared from a wafer on which a plurality of micro LEDs of one color are manufactured, and each micro LED is cut in units of one micro LED. Next, for one type of wafer, micro LEDs are picked up one by one by a chip mounter, and mounted (transferred) to the position of each pixel of the above-mentioned circuit substrate (for example, refer to Patent Document 1). In this way, the installation of one color micro LED is completed. Perform this installation on the remaining two colors (two types of wafers). In this way, the above-mentioned small cell can be manufactured. Next, a necessary number of these small cells are connected vertically and horizontally to form the above-mentioned display. [Prior Technical Literature] [Patent Document]

專利文獻1：日本專利公開公報2010-287657號Patent Document 1: Japanese Patent Laid-Open Publication No. 2010-287657

［發明欲解決之問題］[Problem to be solved by the invention]

然而，在上述晶片安裝機所行之安裝，顯示器所需之數量的像素之形成需要時間。舉例而言，以一台晶片安裝機形成二千萬像素時，安裝之微LED為六千萬個(=二千萬像素×三色)。令拾取晶圓之微LED後至將之安裝至電路基板的時間為一個微LED要0.1秒鐘時，二千萬像素之形成便需要600萬秒鐘(約69天)。However, in the mounting performed by the above-mentioned chip mounter, it takes time to form the number of pixels required for the display. For example, when 20 million pixels are formed by one chip mounting machine, 60 million micro LEDs are installed (=20 million pixels×three colors). If the time from picking up the micro-LED on the wafer to installing it on the circuit board is 0.1 second for one micro-LED, it takes 6 million seconds (about 69 days) to form 20 million pixels.

不僅上述微LED，其他元件亦同樣地，有如上述之移載需要時間的問題。Not only the above-mentioned micro LEDs, but also other components also have the problem of time required for transfer as mentioned above.

本發明鑑於此種情況而作成，提供可縮短從具有複數個元件之基板等移載上述元件所需之時間的元件之移載方法及用於該方法之移載板。 ［解決問題之手段］The present invention has been made in view of such circumstances, and provides a device transfer method and a transfer board used in the method which can shorten the time required to transfer the above-mentioned device from a substrate having a plurality of devices or the like. [means to solve the problem]

本發明將以下之〔1〕～〔5〕作為要旨。 〔1〕一種元件之移載方法，包含下列步驟： 準備將複數個元件以各自獨立之狀態可剝離地黏著之第1黏著性薄膜； 使黏著力大於該第1黏著性薄膜之移載板與該複數個元件的至少一部分緊密貼合，利用該第1黏著性薄膜與該移載板之黏著力的差，將黏著於該第1黏著性薄膜之複數個元件的至少一部分從該第1黏著性薄膜剝離，而可剝離地黏著於該移載板； 準備黏著力大於該移載板之第2黏著性薄膜，使黏著於該移載板之複數個元件的至少一部分與該第2黏著性薄膜緊密貼合，利用該移載板與該第2黏著性薄膜之黏著力的差，將黏著於該移載板之複數個元件的至少一部分從該移載板剝離，而可剝離地黏著於該第2黏著性薄膜。 〔2〕如上述〔1〕之元件之移載方法，在該移載板裝設於圓筒狀或圓柱狀滾筒的外周面之狀態下，使該滾筒一面旋轉，一面緊密貼合於該第1黏著性薄膜上之元件及該第2黏著性薄膜其中至少一者。 〔3〕如上述〔1〕或〔2〕之元件之移載方法，其中，於該移載板之與該元件的緊密貼合面以預定間距排列設置複數之凸條，該凸條之頂面係形成在與該元件之緊密貼合面。 〔4〕如上述〔1〕～〔3〕中任一項之元件之移載方法，該元件係發出紅、綠、藍任一色光之發光元件，將複數個單色之該發光元件以各自獨立狀態可剝離地黏著之第1黏著性薄膜依各色備妥，將各色發光元件依序經由對該移載板之黏著來黏著於一片該第2黏著性薄膜，而使紅、綠、藍之發光元件於該第2黏著性薄膜上相鄰。 〔5〕一種移載板，使用於如上述〔1〕～〔4〕中任一項之元件之移載方法，該移載板與該元件之緊密貼合面的黏著力在150～250mN/mm2 之範圍內。 ［發明之效果］The present invention makes the following [1] to [5] the gist. [1] A method for transferring components, comprising the following steps: preparing a first adhesive film for releasably adhering a plurality of components in an independent state; At least a part of the plurality of components is closely attached, and at least a part of the plurality of components adhered to the first adhesive film is removed from the first adhesive film by utilizing the difference in adhesive force between the first adhesive film and the transfer plate. The adhesive film is peeled off and releasably adhered to the transfer board; preparing a second adhesive film with an adhesive force greater than that of the transfer board, so that at least a part of the plurality of components adhered to the transfer board is compatible with the second adhesive film The film is closely attached, and at least a part of the plurality of components adhered to the transfer board is peeled off from the transfer board by using the difference in adhesive force between the transfer board and the second adhesive film, and is releasably adhered to the transfer board. The second adhesive film. [2] The method of transferring components as described in the above [1], in the state where the transfer plate is installed on the outer peripheral surface of a cylindrical or cylindrical roller, the roller is rotated while being closely attached to the second roller. 1. At least one of the components on the adhesive film and the second adhesive film. [3] The method for transferring components according to the above [1] or [2], wherein a plurality of raised lines are arranged at predetermined intervals on the surface of the transfer plate that closely adheres to the component, and the top of the raised lines The surface system is formed on a closely abutting surface with the component. [4] The device transfer method according to any one of the above-mentioned [1] to [3], the device is a light-emitting device that emits red, green, or blue light, and a plurality of single-color light-emitting devices are respectively The first adhesive film that can be peeled off in an independent state is prepared according to each color, and the light-emitting elements of each color are adhered to one piece of the second adhesive film through the adhesion of the transfer plate in order, so that the red, green, and blue The light emitting elements are adjacent on the second adhesive film. [5] A transfer plate used in the method of transferring components according to any one of the above [1] to [4], the adhesive force between the transfer plate and the close-fitting surface of the component is 150-250mN/ within the range of mm2 . [Effect of the invention]

本發明之元件之移載方法係將可剝離地黏著於第1黏著性薄膜表面之複數個元件的至少一部分一併經由對移載板之可剝離的黏著而可剝離地黏著於第2黏著性薄膜之方法。因此，比起習知的將元件逐個移載之方法，可縮短移載所需之時間。The device transfer method of the present invention is to releasably adhere at least a part of a plurality of components that are releasably adhered to the surface of the first adhesive film to the second adhesive film through releasable adhesion to the transfer plate. film method. Therefore, compared with the conventional method of transferring components one by one, the time required for transfer can be shortened.

［用以實施發明之形態］[Form for implementing the invention]

接著，依據圖式，詳細地說明本發明之實施形態。惟，本發明並不限於此實施形態。Next, embodiments of the present invention will be described in detail with reference to the drawings. However, the present invention is not limited to this embodiment.

本發明元件之移載方法的一實施形態係移載之元件為製造於晶圓之微LED，藉紅(R)、綠(G)、藍(B)三色微LED之移載而形成顯示器的像素之方法。One embodiment of the device transfer method of the present invention is that the transferred device is a micro-LED manufactured on a wafer, and a display is formed by transferring red (R), green (G), and blue (B) micro-LEDs method of pixels.

圖1係示意顯示用於上述元件之移載方法的本發明移載板之一實施形態的立體圖。此實施形態之移載板1形成具黏著性與可撓性之四角形板狀，在單面上，複數之凸條1a以與上述像素相同之間距平行地形成。 此外，在圖1中，為使上述移載板1之結構易理解，而示意顯示各結構，並且改變各結構之尺寸的比例尺而圖示。FIG. 1 is a perspective view schematically showing an embodiment of a transfer plate of the present invention used in the above-mentioned device transfer method. The transfer plate 1 of this embodiment is formed into a quadrangular plate with adhesiveness and flexibility, and on one side, a plurality of convex strips 1a are formed in parallel at the same pitch as the above-mentioned pixels. In addition, in FIG. 1, in order to make the structure of the said transfer board 1 understandable, each structure is shown schematically, and the scale of the dimension of each structure is changed and shown in figure.

更詳細說明，上述移載板1之吸附有效部位(形成上述凸條1a之範圍)與上述晶圓相同程度或在此程度以上，設定在例如50.8mm×50.8mm～300mm×300mm之範圍內。上述移載板1通常具有用以安裝於滾筒T(參照圖5)之安裝空間，面積大於上述吸附有效部位。上述移載板1之面積配合晶圓等之尺寸而適宜設定，可使用例如長276mm×寬250mm之移載板。上述移載板1之厚度(包含上述凸條1a)設定在例如0.95～3.0mm之範圍內。上述凸條1a之尺寸係頂面之寬度為黏著一個微LED之程度的寬度，通常設定在25～2000μm之範圍內，高度設定在100～1000μm之範圍內，長度設定在50.8～152.4mm之範圍內。上述凸條1a之形成間距如之前所述，與上述像素之間距相同，設定在例如75～6000μm之範圍內。In more detail, the suction effective portion of the transfer plate 1 (the area where the ridges 1a are formed) is equal to or greater than that of the wafer, and is set within a range of, for example, 50.8 mm x 50.8 mm to 300 mm x 300 mm. The above-mentioned transfer plate 1 generally has an installation space for installation on the drum T (refer to FIG. 5 ), and has an area larger than the above-mentioned adsorption effective portion. The area of the above-mentioned transfer plate 1 is appropriately set in accordance with the size of the wafer, etc., and a transfer plate with a length of 276 mm x a width of 250 mm can be used, for example. The thickness of the said transfer board 1 (including the said convex line 1a) is set in the range of 0.95-3.0 mm, for example. The size of the above raised strip 1a is the width of the top surface to the extent that a micro LED is adhered, usually set in the range of 25-2000μm, the height is set in the range of 100-1000μm, and the length is set in the range of 50.8-152.4mm Inside. The formation pitch of the ridges 1a is set in the range of, for example, 75 to 6000 μm, as described above, which is the same as the pitch between the pixels.

上述移載板1之黏著力從適合之後說明的微LED之移載方法的觀點而言，在150～250mN/mm2 之範圍內，較佳為在170～230mN/mm2 之範圍內，更佳為在180～200mN/mm2 之範圍內。此黏著力之測定可使用例如RHESCA公司製黏性測定儀(TAC-1000)來測定。The adhesive force of the transfer plate 1 is in the range of 150 to 250 mN/mm 2 , preferably in the range of 170 to 230 mN/mm 2 from the viewpoint of suitability for the transfer method of the micro LED described later. Preferably it is within the range of 180-200mN/mm 2 . The measurement of this adhesive force can be measured using the viscosity measuring instrument (TAC-1000) made from RHESCA company, for example.

上述移載板1之形成材料從具有上述黏著力之觀點而言，使用例如聚丁二烯系感光性樹脂。再者，以使用光罩之光刻法，可製作形成有上述凸條1a之移載板1。如此進行而製作之上述移載板1具有可裝設於之後說明的圓筒狀或圓柱狀滾筒之外周面的程度之可撓性。又，上述移載板1之硬度計硬度通常設定在50～60之範圍內。The material for forming the transfer plate 1 is, for example, a polybutadiene-based photosensitive resin from the viewpoint of having the above-mentioned adhesive force. Furthermore, the transfer board 1 on which the above-mentioned convex lines 1a are formed can be produced by photolithography using a photomask. The above-mentioned transfer plate 1 produced in this way has flexibility to the extent that it can be attached to the outer peripheral surface of a cylindrical or columnar drum to be described later. In addition, the durometer hardness of the said transfer plate 1 is normally set in the range of 50-60.

接著，就用於上述微LED之移載方法的移載機作說明。如圖2所示，此移載機包含有裝設上述移載板1之圓筒狀或圓柱狀滾筒T、載置固定移載端之晶圓2及移載標的之第2黏著性薄膜F2(參照圖5)的台S。上述滾筒T以其軸為中心旋轉自如，上述台S對應上述印版滾筒T之旋轉而滑動自如。又，上述印版滾筒T對上述台S進退自如，而可調整對上述台S上之按壓對象物的按壓載重(壓入量)。 此外，在圖2中，為將上述微LED之移載方法說明得易理解，而示意顯示與該移載方法相關之各結構，並且改變各結構之尺寸的比例尺而圖示。之後的圖3～圖9亦相同。Next, the transfer machine used for the transfer method of the above-mentioned micro LED will be described. As shown in Figure 2, this transfer machine includes a cylindrical or cylindrical roller T equipped with the above-mentioned transfer plate 1, a wafer 2 placed on a fixed transfer end, and a second adhesive film F2 for transferring the target (refer to FIG. 5 ) of station S. The cylinder T is rotatable around its axis, and the table S is slidable in response to the rotation of the plate cylinder T. In addition, the printing plate cylinder T can move forward and backward with respect to the table S, and the pressing load (pressing amount) of the object to be pressed on the table S can be adjusted. In addition, in FIG. 2 , in order to explain the transfer method of the above-mentioned micro LED for easy understanding, various structures related to the transfer method are schematically shown, and the scales of the sizes of each structure are changed to illustrate the diagram. The same applies to subsequent FIGS. 3 to 9 .

接著，使用上述移載機的微LED之移載方法如以下進行。即，首先，將縱橫製造有複數個發出一色光之微LED2a的晶圓2準備三個色(即，三種晶圓2)，分別黏著於黏著力小於上述移載板1之第1黏著性薄膜F1。此時，在此實施形態中，使微LED2a之電極(圖中未示)露出至表面，黏著該電極之反面側的面。接著，以不切斷上述第1黏著性薄膜F1之方式，以一個微LED2a為單位將上述晶圓2縱橫切斷(切割)，而使複數個上述微LED2a分別為獨立之狀態。Next, the transfer method of the micro LED using the above-mentioned transfer machine was performed as follows. That is, firstly, three colors (ie, three types of wafers 2 ) are prepared vertically and horizontally with a plurality of micro-LEDs 2a emitting one color of light, and they are respectively adhered to the first adhesive film whose adhesive force is lower than that of the above-mentioned transfer plate 1. F1. At this time, in this embodiment, the electrode (not shown) of the micro LED 2a is exposed to the surface, and the surface on the opposite side of the electrode is adhered. Next, without cutting the first adhesive film F1, the wafer 2 is cut vertically and horizontally (diced) with one micro LED 2a as a unit, so that the plurality of micro LEDs 2a are each in an independent state.

上述第1黏著性薄膜F1可舉切割薄膜為例。切割薄膜市面販售有各種黏著力強度之薄膜，使用切割薄膜時，如之前所述，選擇黏著力小於上述移載板1之切割薄膜來使用。亦可使用以紫外線照射使樹脂硬化而減弱了黏著力之切割薄膜。該黏著力宜例如比上述移載板1小20mN/mm2 以上。此外，上述第1黏著性薄膜F1之厚度通常在50～300μm之範圍內。The above-mentioned first adhesive film F1 can be exemplified by a dicing film. The dicing film is commercially available with films of various adhesive strengths. When using a dicing film, as mentioned above, select a dicing film with a lower adhesive force than the above-mentioned transfer plate 1 for use. It is also possible to use a dicing film whose adhesive force is weakened by hardening the resin by ultraviolet irradiation. The adhesive force is preferably 20 mN/mm 2 or more smaller than the transfer plate 1 described above, for example. Moreover, the thickness of the said 1st adhesive film F1 exists in the range of 50-300 micrometers normally.

接著，如圖2所示，於上述滾筒T之外周面裝設上述移載板1。此時，將該移載板1之凸條1a朝向外側，並且令該凸條1a之長向為上述滾筒T之旋轉方向。又，將製造有一色〔例如紅(R)〕之微LED2a的一片晶圓2固定於上述移載機之台S的固定位置。此時，將黏著有上述晶圓2之第1黏著性薄膜F1固定於上述台S上。Next, as shown in FIG. 2 , the above-mentioned transfer plate 1 is installed on the outer peripheral surface of the above-mentioned drum T. As shown in FIG. At this time, the protruding line 1a of the transfer plate 1 faces outward, and the long direction of the protruding line 1a is made to be the rotation direction of the above-mentioned drum T. In addition, a wafer 2 producing micro-LEDs 2a of one color (for example, red (R)) is fixed at the fixed position of the table S of the above-mentioned transfer machine. At this time, the 1st adhesive film F1 to which the said wafer 2 was adhered is fixed on the said stage S. As shown in FIG.

然後，一面使上述滾筒T旋轉，一面使上述台S與該旋轉同步往上述滾筒T之方向滑動移動，於上述晶圓2位於上述滾筒T之下方時，裝設於上述滾筒T之外周面的移載板1與上述台S上之晶圓2緊密貼合。此緊密貼合力設定為可將上述晶圓2於上述移載板1(硬度計硬度50～60)壓入至100～1000μm之範圍內的深度之程度。Then, while rotating the drum T, the table S is slid in the direction of the drum T synchronously with the rotation, and when the wafer 2 is located below the drum T, the The transfer plate 1 is in close contact with the wafer 2 on the above-mentioned stage S. This close-adhesion force is set to such an extent that the wafer 2 can be pressed into the transfer plate 1 (durometer hardness 50-60) to a depth within a range of 100-1000 μm.

該緊密貼合在此實施形態中如圖3(從圖2之箭頭X的方向觀看之箭頭視圖)所示，由上述晶圓2之微LED2a構成的複數列中每隔二列，便與上述移載板1之凸條1a的頂面(在圖3中為下端面)緊密貼合。The close fit is shown in Fig. 3 (the arrow view viewed from the direction of the arrow X of Fig. 2 ) in this embodiment, every two rows in the plurality of rows formed by the micro-LEDs 2a of the above-mentioned wafer 2 are connected with the above-mentioned The top surface (the lower end surface in FIG. 3 ) of the convex line 1a of the transfer plate 1 is in close contact with each other.

又，上述緊密貼合如圖4(從圖2之箭頭Y的方向觀看之箭頭視圖)所示，由上述移載板1之各凸條件1a的頂面從該凸條1a之一端側(在圖4為右端側)往另一端側(在圖4為左端側)逐漸從由上述微LED2a構成之一列的一端側(在圖4為右端側)進行至另一端側(在圖4為左端側)。在該緊密貼合後，在解除了上述緊密貼合之部分，與上述凸條1a之頂面緊密貼合的列之微LED2a從上述第1黏著性薄膜F1剝離，而可剝離地黏著於上述凸條1a之頂面。此外，在圖4中，為易理解，僅顯示一列量。Again, the above-mentioned close fit is shown in Figure 4 (the arrow view viewed from the direction of the arrow Y in Figure 2), from the top surface of each convex condition 1a of the above-mentioned transfer plate 1 from one end side of the convex strip 1a (in the Fig. 4 is the right end side) to the other end side (in Fig. 4 is the left end side) gradually from one end side (in Fig. 4 is the right end side) to the other end side (in Fig. ). After this close bonding, at the part where the above close bonding is released, the row of micro LEDs 2a closely bonded to the top surface of the above-mentioned convex line 1a is peeled off from the above-mentioned first adhesive film F1, and is releasably adhered to the above-mentioned The top surface of the convex strip 1a. In addition, in FIG. 4, only one column of quantities is shown for easy understanding.

接著，擴大上述滾筒T與上述台S之間隙，使上述移載板1與上述晶圓2不致接觸後，使上述滾筒T往與上述相反之方向旋轉，並且使上述台S滑動移動，而使上述台S返回至原本之位置(參照圖2)。然後，從該台S上將上述晶圓2與上述第1黏著性薄膜F1一同移除。Next, after expanding the gap between the roller T and the table S so that the transfer plate 1 does not come into contact with the wafer 2, the roller T is rotated in the opposite direction to the above, and the table S is slid to move, so that The stand S returns to its original position (see FIG. 2 ). Then, the wafer 2 is removed from the stage S together with the first adhesive film F1.

之後，如圖5所示，將黏著力大於上述移載板1之第2黏著性薄膜F2固定於上述台S之預定位置。Afterwards, as shown in FIG. 5 , the second adhesive film F2 having an adhesive force greater than that of the transfer plate 1 is fixed at a predetermined position on the above-mentioned table S.

此第2黏著性薄膜F2與上述第1黏著性薄膜F1同樣地，可舉切割薄膜為例。切割薄膜如之前所述，市面販售有各種黏著力強度之切割薄膜，使用切割薄膜時，選擇黏著力大於上述移載板1之切割薄膜來使用。其黏著力宜例如比上述移載板1大20mN/mm2 以上。此外，上述第2黏著性薄膜F2之厚度通常在50～300μm之範圍內。This 2nd adhesive film F2 is the same as the said 1st adhesive film F1, and a dicing film is mentioned as an example. Cutting film As mentioned above, there are various kinds of adhesive strength cutting films on the market. When using cutting films, choose a cutting film with stronger adhesion than the above-mentioned transfer plate 1 for use. Its adhesive force is preferably 20 mN/mm 2 or more greater than the transfer plate 1 described above, for example. Moreover, the thickness of the said 2nd adhesive film F2 exists in the range of 50-300 micrometers normally.

接著，一面使上述滾筒T旋轉，一面使上述台S與該旋轉同步往上述滾筒T之方向滑動移動，於上述晶圓2位於上述滾筒T之下方時，與裝設在上述滾筒T之外周面的移載板1緊密貼合之微LED2a與上述台S上之第2黏著性薄膜F2緊密貼合。此緊密貼合力設定為將上述微LED2a於上述移載板1(硬度計硬度50～60)壓入至100～1000μm之範圍內的深度之程度。Next, while rotating the drum T, the table S is slid in the direction of the drum T synchronously with the rotation, and when the wafer 2 is located below the drum T, it is mounted on the outer peripheral surface of the drum T. The micro-LED 2a closely attached to the transfer plate 1 is closely attached to the second adhesive film F2 on the above-mentioned stage S. This close-adhesion force is set so that the micro-LED 2a may be pressed into the transfer plate 1 (durometer hardness 50-60) to a depth within a range of 100-1000 μm.

該緊密貼合如圖6(從圖5之箭頭X的方向觀看之箭頭視圖)所示，黏著於上述移載板1之各凸條1a的頂面(在圖6為下端面)之一列微LED2a與上述第2黏著性薄膜F2緊密貼合。The tight fit is shown in Fig. 6 (the arrow view viewed from the direction of arrow X in Fig. 5), and a row of micro-coils adhered to the top surface (lower end surface in Fig. 6 ) of each convex strip 1a of the above-mentioned transfer plate 1 LED2a is closely bonded to the said 2nd adhesive film F2.

又，上述緊密貼合如圖7(從圖5之箭頭Y的方向觀看之箭頭視圖)所示，由上述一列微LED2a從該一列之一端側(在圖7為右端側)往另一端側(在圖7為左端側)逐漸從上述第2黏著性薄膜F2之一端側(在圖7為右端側)進行至另一端側(在圖7為左端側)。在該緊密貼合後，在解除了上述緊密貼合之部分，與各凸條1a之頂面黏著的一列微LED2a從上述凸條1a之一端部的頂面依序剝離，而可剝離地黏著於上述第2黏著性薄膜F2。在此黏著狀態下，微LED2a之電極露出至表面，該電極之反面側的面被黏著。此外，在圖7中，為易理解，僅顯示一列量。Again, as shown in Figure 7 (the arrow view viewed from the direction of the arrow Y in Figure 5), the above-mentioned tight fit is from one end side of the row (right end side in Figure 7) to the other end side ( It is the left end side in FIG. 7 ) gradually proceeds from one end side (right end side in FIG. 7 ) of the second adhesive film F2 to the other end side (left end side in FIG. 7 ). After the close bonding, at the part where the above-mentioned close bonding is released, a row of micro LEDs 2a adhered to the top surface of each convex strip 1a are sequentially peeled off from the top surface of one end of the above-mentioned convex strip 1a, and are releasably adhered. In the above-mentioned 2nd adhesive film F2. In this adhered state, the electrode of the micro LED 2a is exposed to the surface, and the surface on the opposite side of the electrode is adhered. In addition, in FIG. 7, only one column of quantities is shown for easy understanding.

接著，擴大上述滾筒T與上述台S之間隙，使上述移載板1與上述第2黏著性薄膜F2不致接觸後，使上述滾筒T往與上述相反之方向旋轉，並且使上述台S滑動移動，而使上述台S返回至原本之位置(參照圖5)。然後，從上述台S上將上述一色之微LED2a可剝離地黏著之第2黏著性薄膜F2移除。Next, after expanding the gap between the roller T and the table S so that the transfer plate 1 and the second adhesive film F2 are not in contact, the roller T is rotated in the opposite direction to the above, and the table S is slid to move. , and the above-mentioned table S is returned to the original position (refer to FIG. 5 ). Then, the second adhesive film F2 to which the micro LEDs 2a of one color are releasably adhered is removed from the table S.

如此進行，一色〔例如紅(R)〕之微LED2a的移載完畢。In this way, the transfer of micro LEDs 2a of one color [for example, red (R)] is completed.

接著，將如上述之微LED2a的移載亦對剩餘之二色進行。即，首先，以與上述相同之方式將製造有剩餘之二色中的一色〔例如綠(G)〕之微LED2a的一片晶圓2固定於上述移載機之台S的預定位置。上述移載板1維持裝設於上述滾筒T之外周面的狀態。然後，以與上述相同之方式將上述微LED2a從上述第1黏著性薄膜F1剝離而可剝離地黏著於上述移載板1之凸條1a的頂面。之後，從上述台S上將上述晶圓2與上述第1黏著性薄膜F1一同移除。Then, the transfer of the above-mentioned micro LED 2a is also carried out for the remaining two colors. That is, first, in the same manner as above, a wafer 2 on which micro LEDs 2a of one of the remaining two colors (for example, green (G)) is produced is fixed at a predetermined position on the stage S of the above-mentioned transfer machine. The said transfer plate 1 maintains the state attached to the outer peripheral surface of the said drum T. As shown in FIG. Then, the above-mentioned micro LED 2a is peeled off from the above-mentioned first adhesive film F1 and releasably adhered to the top surface of the convex strip 1a of the above-mentioned transfer plate 1 in the same manner as above. Thereafter, the wafer 2 is removed from the stage S together with the first adhesive film F1.

接著，將黏著有上述第1色之微LED2a的第2黏著性薄膜F2固定於上述台S之預定位置，以與上述相同之方式將與上述移載板1之各凸條1a的頂面黏著之一列微LED2a從上述凸條1a之頂面剝離而可剝離地黏著於上述第2黏著性薄膜F2。此時，如圖8(從圖5之箭頭X的方向觀看之箭頭視圖)所示，為了使第2色〔例如綠(G)〕之微LED2a黏著於第1色〔例如紅(R)〕之微LED2a旁邊，而將上述滾筒T或上述台S往與該台S之滑動方向構成直角的方向挪動一個微LED2a量。Next, fix the second adhesive film F2 with the micro-LED 2a of the first color on the predetermined position of the above-mentioned table S, and adhere to the top surface of each convex strip 1a of the above-mentioned transfer plate 1 in the same manner as above. A row of micro-LEDs 2a is peeled off from the top surface of the protruding strip 1a and adhered to the second adhesive film F2 in a detachable manner. At this time, as shown in FIG. 8 (the arrow view viewed from the direction of the arrow X in FIG. 5 ), in order to make the micro LED 2a of the second color (such as green (G)) adhere to the first color (such as red (R)) Next to the micro-LED2a, move the above-mentioned roller T or the above-mentioned table S to the direction forming a right angle with the sliding direction of the table S by a micro-LED2a amount.

如此進行，二色〔例如紅(R)與綠(G)〕之微LED2a的移載完畢。In this way, the transfer of micro-LEDs 2a of two colors [for example, red (R) and green (G)] is completed.

接著，以與上述第2色之微LED2a的移載相同之方式進行剩餘之一色〔例如藍(B)〕的微LED2a之移載，在上述第2黏著性薄膜F2，如圖9(從圖5之箭頭X的方向觀看之箭頭視圖)所示，使第3色〔例如藍(B)〕之微LED2a黏著於第2色〔例如綠(G)〕之微LED2a旁邊。Then, carry out the transfer of the micro LED 2a of the remaining one color [such as blue (B)] in the same manner as the transfer of the micro LED 2a of the second color above, on the above-mentioned 2nd adhesive film F2, as shown in Figure 9 (from Fig. As shown in the arrow view viewed from the direction of the arrow X of 5), the micro-LED 2a of the third color (such as blue (B)) is adhered to the side of the micro-LED 2a of the second color (such as green (G)).

如此進行，三色之微LED2a的移載完畢，而獲得在上述第2黏著性薄膜F2以上述三色之微LED2a為一像素P，複數之像素P於縱橫方向有規則地配置之移載薄膜。In this way, the transfer of the three-color micro-LEDs 2a is completed, and a transfer film in which the above-mentioned three-color micro-LEDs 2a are used as a pixel P on the second adhesive film F2 and a plurality of pixels P are regularly arranged in the vertical and horizontal directions is obtained. .

在此實施形態中，如上述，可將製造於晶圓2之複數個微LED2a一併移載至第2黏著性薄膜F2。因此，比起習知將元件逐個移載之方法，可大幅縮短移載所需之時間。In this embodiment, as described above, the plurality of micro LEDs 2a manufactured on the wafer 2 can be transferred to the second adhesive film F2 at a time. Therefore, compared with the conventional method of transferring components one by one, the time required for transfer can be greatly shortened.

又，由於用於上述移載之移載板1裝設於圓筒狀或圓柱狀滾筒T之外周面，從上述第1黏著性薄膜F1對上述移載板1之黏著及從上述移載板1對上述第2黏著性薄膜F2之黏著係一面使上述滾筒T旋轉一面進行，故可易均一且高精確度地管理上述移載板1對上述晶圓2之按壓載重及對上述第2黏著性薄膜F2之按壓載重，而可穩定地進行上述移載。結果，可提高所獲得之上述移載薄膜的品質。Also, since the transfer plate 1 used for the above-mentioned transfer is installed on the outer peripheral surface of the cylindrical or cylindrical drum T, the adhesion of the first adhesive film F1 to the above-mentioned transfer plate 1 and the transfer from the above-mentioned transfer plate 1. The adhesion to the second adhesive film F2 is performed while rotating the roller T, so that the pressing load of the transfer plate 1 to the wafer 2 and the second adhesion can be easily and uniformly managed with high precision. The pressing load of the permanent film F2 can be carried out stably. As a result, the quality of the above-mentioned transfer film obtained can be improved.

再者，上述移載板1由於複數之凸條1a以預定間距平行地形成，該凸條1a之頂面形成於上述微LED2a之黏著面，故適合上述微LED2a之有規則的位置之移載。舉例而言，如上述，上述移載板1在用以形成顯示器之像素P的移載上優異。又，藉形成有上述凸條1a，上述移載板1之剛性提高，移載板1之歪斜減少，而可使形狀穩定。因此，使上述凸條1a與上述微LED2a緊密貼合之際的上述移載板1之變形減少，可穩定地發揮黏著力，而可穩定地進行上述移載，而可提高所獲得之上述移載薄膜的品質。Moreover, the above-mentioned transfer board 1 is suitable for transfer of the regular position of the above-mentioned micro-LED 2a because a plurality of convex strips 1a are formed in parallel at predetermined intervals, and the top surface of the convex strip 1a is formed on the adhesive surface of the above-mentioned micro-LED 2a. . For example, as mentioned above, the said transfer board 1 is excellent in the transfer of the pixel P for forming a display. Moreover, by forming the above-mentioned protruding lines 1a, the rigidity of the above-mentioned transfer plate 1 is improved, the distortion of the transfer plate 1 is reduced, and the shape can be stabilized. Therefore, the deformation of the above-mentioned transfer plate 1 when the above-mentioned convex strip 1a and the above-mentioned micro LED 2a are closely attached is reduced, the adhesive force can be exerted stably, and the above-mentioned transfer can be performed stably, and the obtained above-mentioned transfer can be improved. The quality of the carrier film.

又，由於上述移載板1之黏著力在150～250mN/mm2 之範圍內，故適合如上述之微LED2a的移載方法。Moreover, since the adhesive force of the above-mentioned transfer board 1 is in the range of 150-250 mN/mm 2 , it is suitable for the transfer method of the above-mentioned micro LED 2a.

再者，在此實施形態中，可將三種(三色)晶圓2的微LED2a移載至一片上述移載薄膜。如此進行而得之上述移載薄膜因微LED2a之電極露出至表面，故可用於例如下述情形，前述情形係使該微LED2a之電極側的面以與構成顯示器之小型單元的電路基板之電路形成面對向的狀態抵接，在此狀態下，將上述移載薄膜之所有微LED2a一併安裝至上述電路基板。因此，可謀求上述小型單元之製作的效率化。Furthermore, in this embodiment, the micro LEDs 2 a of three types (three colors) of wafers 2 can be transferred to one piece of the above transfer film. The above-mentioned transfer film obtained in this way can be used, for example, in the case where the surface of the electrode side of the micro-LED 2a is connected to the circuit of the circuit board constituting the small unit of the display because the electrode of the micro-LED 2a is exposed to the surface. Form contact in a facing state, and in this state, all the micro LEDs 2a of the above-mentioned transfer film are mounted on the above-mentioned circuit board together. Therefore, the production efficiency of the above-mentioned small cells can be achieved.

又，上述第1黏著性薄膜F1使用伸縮自如之薄膜，藉在切斷(切割)晶圓2後，使上述第1黏著性薄膜F1延伸，可改變上述第1黏著性薄膜F1上之微LED2a的間距。此時，因於移載前可將微LED2a之間距設定為預定間距，故移載板1可使用未形成上述凸條1a之平板狀移載板。Also, the above-mentioned first adhesive film F1 is a stretchable film, and after cutting (cutting) the wafer 2, the above-mentioned first adhesive film F1 is stretched, so that the micro LEDs 2a on the above-mentioned first adhesive film F1 can be changed. Pitch. At this time, since the distance between the micro LEDs 2a can be set to a predetermined pitch before the transfer, the transfer board 1 can use a flat board without the above-mentioned convex strip 1a.

再者，上述第2黏著性薄膜F2使用伸縮自如之薄膜時，即使有變更安裝至上述電路基板之微LED2a的間距之情形，藉使上述第2黏著性薄膜F2伸縮，亦可對應上述間距之變更。Furthermore, when the above-mentioned second adhesive film F2 is a stretchable film, even if the pitch of the micro LEDs 2a mounted on the above-mentioned circuit board is changed, the above-mentioned second adhesive film F2 can be expanded and contracted to correspond to the above-mentioned pitch. change.

此外，在上述實施形態中，微LED2a對第1黏著性薄膜F1之黏著係使微LED2a之電極露出至表面並將該電極之反面側的面作為黏著側而進行，亦可反過來進行。即，亦可將微LED2a之電極作為對第1黏著性薄膜F1之黏著側。In addition, in the above-mentioned embodiment, the adhesion of the micro LED 2a to the first adhesive film F1 is carried out by exposing the electrode of the micro LED 2a to the surface and making the opposite side of the electrode the adhesive side, or vice versa. That is, you may make the electrode of micro LED2a the adhesion side with respect to 1st adhesive film F1.

又，在上述實施形態中，移載了三色之晶圓2的微LED2a，顏色數亦可為二色以下，或亦可為四色以上。又，移載之元件為微LED2a，該元件亦可為其他元件，舉例而言，亦可為次毫米LED、不發光之元件等。In addition, in the above-mentioned embodiment, the number of colors of the micro LED 2a on which the three-color wafer 2 is transferred may be two colors or less, or four colors or more. Moreover, the component to be transferred is the micro LED 2a, and the component can also be other components, for example, it can also be a submillimeter LED, a non-luminous component, and the like.

再者，在上述實施形態中，將移載板1裝設於圓筒狀或圓柱狀滾筒T之外周面，一面使該滾筒T旋轉，一面進行了移載，亦可不裝設於上述印版輥筒T，而以平坦之狀態進行移載。惟，此時，有不易將對晶圓2之按壓載重、及對第2黏著性薄膜F2之按壓載重管理為一定之虞。Furthermore, in the above-mentioned embodiment, the transfer plate 1 is installed on the outer peripheral surface of the cylindrical or columnar cylinder T, and the cylinder T is rotated while the transfer is performed, and it may not be installed on the above-mentioned printing plate. The roller T is transferred in a flat state. However, in this case, it may be difficult to manage the pressing load to the wafer 2 and the pressing load to the second adhesive film F2 to be constant.

接著，將實施例與習知例一同說明。惟，本發明並不限實施例。 ［實施例］Next, examples will be described together with conventional examples. However, the present invention is not limited to the examples. [Example]

〔實施例〕 >移載板> 移載板之形成材料使用聚丁二烯系液狀光硬化性樹脂，以光刻法，製作了圖1所示之形成有複數的凸條1a之移載板1。此移載板1為長方形板狀(長276mm×寬185mm×厚度2.84mm)，配置於上述移載板1之吸附有效部位的上述凸條1a以間距4.035mm形成十五條，各凸條1a之尺寸為高度0.791mm×寬度1.1mm×長度80mm。接著，當使用RHESCA公司製黏性測定儀(TAC-1000、測定探頭之面積78.54mm2 )，測定該移載板1之黏著力時，為192.6mN/mm2 。此外，該黏著力之測定係改變測定位置測定三次，採取其平均值。〔Example〕 >Transfer plate> A polybutadiene-based liquid photocurable resin was used as a material for the transfer plate, and a transfer plate in which a plurality of convex lines 1a were formed as shown in FIG. 1 was produced by photolithography. plate 1. This transfer plate 1 is a rectangular plate shape (length 276mm×width 185mm×thickness 2.84mm), and the above-mentioned convex strips 1a arranged on the effective adsorption part of the above-mentioned transfer plate 1 form fifteen strips at a distance of 4.035mm, and each convex strip 1a The size is height 0.791mm x width 1.1mm x length 80mm. Next, when the adhesive force of the transfer plate 1 was measured using an adhesive tester (TAC-1000, measurement probe area: 78.54 mm 2 ) manufactured by RHESCA, it was 192.6 mN/mm 2 . In addition, the adhesive force was measured three times by changing the measurement position, and the average value was taken.

>微LED之移載> 使用上述移載板1，以與上述實施形態相同之方式，移載了六千萬個微LED2a。上述移載板1可將一千個微LED2a一併黏著。因此，上述六千萬個微LED2a之移載需要六萬次移載。由於一次移載需要5秒鐘，故上述六千萬個微LED2a之移載30萬秒鐘(約83小時)完畢。此外，在此實施例中，第1黏著性薄膜係將黏著力為75mN/mm2 之切割薄膜(琳得科公司製、D175)以紫外線照射減弱黏著力來使用(紫外線照射後之黏著力：7.5mN/mm2 )，第2黏著性薄膜使用黏著力為650mN/mm2 之切割薄膜(優果電子公司製、HUG-PT)。>Transfer of micro LEDs> Sixty million micro LEDs 2a were transferred using the transfer plate 1 described above in the same manner as in the above embodiment. The above-mentioned transfer plate 1 can adhere one thousand micro-LEDs 2a together. Therefore, the transfer of the above 60 million micro LEDs 2a requires 60,000 times of transfer. Since one transfer takes 5 seconds, the transfer of the above-mentioned 60 million micro LEDs 2a is completed in 300,000 seconds (about 83 hours). In addition, in this example, the first adhesive film was a dicing film (manufactured by Lintec Corporation, D175) with an adhesive force of 75 mN/mm 2 , which was used to weaken the adhesive force by ultraviolet irradiation (adhesive force after ultraviolet irradiation: 7.5 mN/mm 2 ), the second adhesive film used a dicing film (manufactured by HUG-PT) with an adhesive force of 650 mN/mm 2 .

〔習知例〕 如開頭所述，使用晶片安裝機，將六千萬個微LED2a逐個移載。由於一次移載需要0.1秒，故上述六千萬個微LED2a之移載需要600萬秒鐘(約69天)。〔Example〕 As mentioned above, 60 million micro LEDs 2a were transferred one by one using a chip mounter. Since one transfer takes 0.1 second, the transfer of the 60 million micro LEDs 2a needs 6 million seconds (about 69 days).

從上述結果可知，上述實施例之移載方法比起習知例之移載方法，可大幅縮短移載所需之時間。From the above results, it can be seen that the transfer method of the above embodiment can greatly shorten the time required for transfer compared with the transfer method of the conventional example.

在上述實施例中，顯示了本發明之具體形態，上述實施例僅為例示，並非限定地解釋。意圖該業者可清楚明白之各種變形在本發明之範圍內。 ［產業上之可利用性］In the above-mentioned examples, specific aspects of the present invention were shown, and the above-mentioned examples are only illustrative and should not be interpreted in a limited manner. Various modifications apparent to those skilled in the art are intended to be within the scope of the present invention. [Industrial availability]

本發明的元件之移載方法及用於該方法之移載板可利用於將複數個微LED等元件一併移載之情形。The method for transferring components of the present invention and the transfer plate used in the method can be used in the case of transferring a plurality of components such as micro LEDs at a time.

1:移載板 1a:凸條 2:晶圓 2a:微LED B:藍 F1:第1黏著性薄膜 F2:第2黏著性薄膜 G:綠 P:像素 R:紅 S:台 T:滾筒 X:箭頭 Y:箭頭1: transfer plate 1a: Convex 2: Wafer 2a: Micro LED B: blue F1: The first adhesive film F2: The second adhesive film G: Green P: pixel R: red S: desk T: roller X: arrow Y: Arrow

［圖1］係示意顯示本發明移載板之一實施形態的立體圖。 ［圖2］係示意顯示本發明元件之移載方法的一實施形態中之步驟的說明圖。 ［圖3］係示意顯示上述元件之移載方法中之步驟之說明圖。 ［圖4］係示意顯示上述元件之移載方法中之步驟之說明圖。 ［圖5］係示意顯示上述元件之移載方法中之步驟之說明圖。 ［圖6］係示意顯示上述元件之移載方法中之步驟之說明圖。 ［圖7］係示意顯示上述元件之移載方法中之步驟之說明圖。 ［圖8］係示意顯示上述元件之移載方法中之步驟之說明圖。 ［圖9］係示意顯示上述元件之移載方法中之步驟之說明圖。[ Fig. 1 ] is a perspective view schematically showing one embodiment of the transfer board of the present invention. [ Fig. 2 ] is an explanatory diagram schematically showing the steps in one embodiment of the device transfer method of the present invention. [Fig. 3] is an explanatory diagram schematically showing the steps in the method of transferring the above-mentioned components. [FIG. 4] is an explanatory diagram schematically showing the steps in the above-mentioned device transfer method. [FIG. 5] is an explanatory diagram schematically showing the steps in the method of transferring the above-mentioned components. [FIG. 6] is an explanatory diagram schematically showing the steps in the method of transferring the above-mentioned components. [FIG. 7] is an explanatory diagram schematically showing the steps in the method of transferring the above-mentioned components. [FIG. 8] is an explanatory diagram schematically showing the steps in the above-mentioned device transfer method. [FIG. 9] is an explanatory diagram schematically showing the steps in the method of transferring the above-mentioned components.

1:移載板 1: transfer plate

1a:凸條 1a: Convex

2:晶圓 2: Wafer

2a:微LED 2a: Micro LED

F1:第1黏著性薄膜 F1: The first adhesive film

R:紅 R: red

S:台 S: Taiwan

T:滾筒 T: roller

X:箭頭 X: arrow

Y:箭頭 Y: Arrow

Claims (3)

一種元件之移載方法，包含下列步驟：準備將複數個元件以各自獨立之狀態可剝離地黏著之第1黏著性薄膜；使黏著力大於該第1黏著性薄膜之移載板與該複數個元件的至少一部分緊密貼合，利用該第1黏著性薄膜與該移載板之黏著力的差，將黏著於該第1黏著性薄膜之複數個元件的至少一部分從該第1黏著性薄膜剝離，而可剝離地黏著於該移載板；以及，準備黏著力大於該移載板之第2黏著性薄膜，使黏著於該移載板之複數個元件的至少一部分與該第2黏著性薄膜緊密貼合，利用該移載板與該第2黏著性薄膜之黏著力的差，將黏著於該移載板之複數個元件的至少一部分從該移載板剝離，而可剝離地黏著於該第2黏著性薄膜；該元件之移載方法，係在該移載板裝設於圓筒狀或圓柱狀滾筒的外周面之狀態下，使該滾筒一面旋轉，一面緊密貼合於該第1黏著性薄膜上之元件及該第2黏著性薄膜其中至少一者；於該移載板之與該元件的緊密貼合面以預定間距排列設置複數之凸條，該凸條之頂面係形成在與該元件之緊密貼合面，該凸條之長邊方向為該滾筒的旋轉方向。 A method for transferring components, comprising the following steps: preparing a first adhesive film for releasably adhering a plurality of components in an independent state; At least a part of the components are closely attached, and at least a part of the plurality of components adhered to the first adhesive film is peeled off from the first adhesive film by utilizing the difference in the adhesive force between the first adhesive film and the transfer plate , and releasably stick to the transfer plate; Closely adhered, using the difference in adhesion between the transfer board and the second adhesive film, at least a part of the plurality of components adhered to the transfer board is peeled off from the transfer board, and releasably adhered to the transfer board. The second adhesive film; the transfer method of the component is that when the transfer plate is installed on the outer peripheral surface of the cylindrical or cylindrical roller, the roller is rotated and the side is closely attached to the first At least one of the component on the adhesive film and the second adhesive film; a plurality of convex lines are arranged at predetermined intervals on the surface of the transfer plate that closely adheres to the component, and the top surface of the convex line is formed On the surface closely attached to the element, the direction of the long side of the protruding line is the direction of rotation of the roller. 如申請專利範圍第1項之元件之移載方法，其中，該元件係發出紅、綠、藍任一色光之發光元件，將複數個單色之該發光元件以各自獨立狀態可剝離地黏著之第1黏著性薄膜依各色備妥，將各色發光元件依序經由對該移載板之黏著來黏著於一片該第2黏著性薄膜，而使紅、綠、藍之發光元件於該第2黏著性薄膜上相鄰。 For example, the device transfer method of item 1 of the scope of the patent application, wherein the device is a light-emitting device that emits red, green, or blue light, and a plurality of single-color light-emitting devices are releasably adhered in an independent state. The first adhesive film is prepared according to each color, and the light-emitting elements of each color are adhered to one piece of the second adhesive film in sequence through the adhesion of the transfer plate, so that the red, green, and blue light-emitting elements are attached to the second adhesive film. Adjacent on the thin film. 一種移載板，使用於如該申請專利範圍第1項或第2項之元件之移載方法，該移載板與該元件之緊密貼合面的黏著力在150~250mN/mm2之範圍內。 A transfer plate, used for the transfer method of the components in item 1 or item 2 of the patent scope of the application, the adhesive force between the transfer plate and the close-fitting surface of the component is in the range of 150~250mN/ mm2 Inside.
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JPWO2020059588A1 (en) 2021-08-30
TW202042416A (en) 2020-11-16
JP7250690B2 (en) 2023-04-03
CN112567505A (en) 2021-03-26
WO2020059588A1 (en) 2020-03-26

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