CN112435946A - LED chip mass transfer method, transfer device and display screen manufacturing method - Google Patents
LED chip mass transfer method, transfer device and display screen manufacturing method Download PDFInfo
- Publication number
- CN112435946A CN112435946A CN202011281009.6A CN202011281009A CN112435946A CN 112435946 A CN112435946 A CN 112435946A CN 202011281009 A CN202011281009 A CN 202011281009A CN 112435946 A CN112435946 A CN 112435946A
- Authority
- CN
- China
- Prior art keywords
- chip
- chips
- transfer
- substrate
- led
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000012546 transfer Methods 0.000 title claims abstract description 98
- 238000000034 method Methods 0.000 title claims abstract description 35
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 33
- 239000000758 substrate Substances 0.000 claims abstract description 71
- 230000005291 magnetic effect Effects 0.000 claims abstract description 40
- 238000001338 self-assembly Methods 0.000 claims abstract description 6
- 229920002120 photoresistant polymer Polymers 0.000 claims description 24
- 239000010408 film Substances 0.000 claims description 20
- 239000006247 magnetic powder Substances 0.000 claims description 16
- 239000010409 thin film Substances 0.000 claims description 16
- 238000000576 coating method Methods 0.000 claims description 14
- 239000003292 glue Substances 0.000 claims description 14
- 239000002184 metal Substances 0.000 claims description 14
- 229910052751 metal Inorganic materials 0.000 claims description 14
- 230000005294 ferromagnetic effect Effects 0.000 claims description 13
- 238000001259 photo etching Methods 0.000 claims description 12
- 239000011248 coating agent Substances 0.000 claims description 11
- 239000003795 chemical substances by application Substances 0.000 claims description 6
- 238000011161 development Methods 0.000 claims description 6
- 239000000203 mixture Substances 0.000 claims description 6
- 230000005298 paramagnetic effect Effects 0.000 claims description 5
- 239000003086 colorant Substances 0.000 claims description 3
- 238000001704 evaporation Methods 0.000 claims description 3
- 230000008020 evaporation Effects 0.000 claims description 3
- 238000000227 grinding Methods 0.000 claims description 3
- 239000007788 liquid Substances 0.000 claims description 3
- 238000004544 sputter deposition Methods 0.000 claims description 3
- 238000002955 isolation Methods 0.000 claims description 2
- 238000005507 spraying Methods 0.000 claims description 2
- 239000000126 substance Substances 0.000 claims description 2
- 150000002739 metals Chemical class 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 24
- 238000005516 engineering process Methods 0.000 description 7
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000005307 ferromagnetism Effects 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 230000005389 magnetism Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67763—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
- H01L21/67778—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading involving loading and unloading of wafers
- H01L21/67781—Batch transfer of wafers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/50—Multistep manufacturing processes of assemblies consisting of devices, each device being of a type provided for in group H01L27/00 or H01L29/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Device Packages (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
The invention relates to a method and a device for transferring LED chip bulk and a method for manufacturing a display screen, wherein the method for transferring the LED chip bulk comprises the following steps: firstly, manufacturing a magnetic film on one surface of a chip; then, manufacturing a transfer substrate with a plurality of grooves or through holes matched with the shapes and the sizes of the chips according to the shapes and the sizes of the chips, so that the chips can be selectively embedded into the groove areas or the through holes of the transfer substrate according to the difference of physical shapes; and finally, placing a magnet on one side of the transfer substrate, performing redistribution selective positioning on the chips with the magnetic films by utilizing the magnetic attraction and the grooves or the through holes on the transfer substrate, and transferring the chips into the corresponding grooves or the through holes of the transfer substrate. The invention utilizes the magnetic orientation selection and the shape difference of the external dimension of the chip, combines the special transfer substrate, can realize the self-assembly transfer positioning of a huge amount of chips, does not need high-precision equipment, and can realize the huge amount transfer with low cost, high precision and high yield.
Description
Technical Field
The invention relates to the technical field of LED display and backlight, in particular to a method and a device for transferring LED chips in large quantities and a method for manufacturing a display screen.
Background
The Mini LED backlight and Micro LED display technology is that millions to tens of millions of semiconductor light-emitting LED pixels with the size within 100 microns are accurately and orderly transferred to various circuit substrates in a mass transfer mode to form high-density integrated display devices with different application types. The mass transfer technology of Micro LEDs is to integrate many devices together at the stage of chip morphology, rather than waiting until the final package is completed before integrating the product in device morphology onto the carrier.
Because Micro LEDs use micron-sized LED chips as display pixels, the bulk transfer technology mainly has several technical difficulties:
1. transfer positioning accuracy: the transferred Micro LED chip size is micron-scale, generally 1-50 microns, and the transfer positioning precision is required to be 2 microns in error.
2. Transfer positioning yield: according to the difference of resolution, the 2k-4k Micro LED display screen has unit pixel points of about 200-900 ten thousand groups/square meter, the number of corresponding LED chips is 600-2400 ten thousand, and in order to meet the display quality, the number of defective chips is required to be lower than 3-5 PPM/square meter, so that the transfer positioning yield is required to be very high.
3. Transfer chip cost aspect: the chip transfer quantity required by the Micro LED display screen is generally tens of millions of chips per square meter, and the cost is the biggest problem encountered by the current Micro LED technology due to the huge chip transfer quantity.
At present, the huge transfer technology has high difficulty and expensive transfer cost, and the process routes comprise different technical routes such as seal transfer, laser transfer, fluid assembly, electromagnetic force transfer and the like. The current transfer technology mainly adopts a seal mode, but a seal transfer route has low transfer efficiency and difficult mass repair, and is not an optimal mass production transfer route. Low cost, high precision, high yield bulk transfer technology is one of the major obstacles for current Micro LED display applications.
Disclosure of Invention
The invention mainly aims to overcome the defects of the prior art and provide the LED chip mass transfer method, the transfer device and the display screen manufacturing method which can realize mass chip self-assembly transfer positioning, do not need high-precision equipment and can realize mass transfer with low cost, high precision and high yield.
The invention adopts the following technical scheme:
the LED chip bulk transfer method comprises the following steps:
firstly, manufacturing a layer of magnetic film on one surface of a chip;
manufacturing a transfer substrate with a plurality of grooves or through holes matched with the shapes and the sizes of the chips according to the shapes and the sizes of the chips, so that the chips can be selectively embedded into the groove areas or the through holes of the transfer substrate according to the difference of physical shapes;
placing a magnet on one side of the transfer substrate, performing redistribution selective positioning on a plurality of chips with magnetic films by utilizing the magnetic attraction and the grooves or the through holes on the transfer substrate, and transferring the chips into the corresponding grooves or the through holes of the transfer substrate to realize the self-assembly transfer positioning of a large number of chips.
Further, the magnetic thin film in the step (i) is made of a magnetic substance with magnetism or a metal with ferromagnetism.
Further, in the step (r), the method for manufacturing a magnetic thin film on a chip sequentially includes the following steps:
a. arranging the LED wafer with the manufactured chip on a positioning substrate, wherein the electrode surface of the chip is far away from the positioning substrate;
b. manufacturing a photoetching mask plate according to the size of a chip on the LED wafer;
c. coating photoresist on the chip surface of the LED wafer;
d. removing the photoresist in the corresponding area of the chip by means of a photoetching mask plate through exposure and development processes;
e. filling the exposed corresponding area of the chip with magnetic powder, paramagnetic the magnetic powder on the LED wafer by additionally arranging a magnet on one side of the positioning substrate, which is far away from the chip, and fixedly connecting the magnetic powder layer on the surface of the chip by glue;
f. and removing the photoresist by using a degumming agent, and finishing the manufacture of the magnetic film on the chip.
Furthermore, in the step e, after paramagnetic of the magnetic powder on the LED wafer, a layer of liquid glue is sprayed on the LED wafer, and the glue is solidified, so that the chip and the mixture layer of the magnetic powder and the glue are firmly connected; and then, grinding the mixture layer of the magnetic powder and the glue on the LED wafer by using a grinder until the photoresist between the chips is exposed, and forming magnetic thin films on each chip with photoresist isolation between the magnetic thin films of the chips.
Further, in the step (r), the method for manufacturing a magnetic thin film on a chip sequentially includes the following steps:
A. arranging the LED wafer with the manufactured chip on a positioning substrate, wherein the electrode surface of the chip is far away from the positioning substrate;
B. manufacturing a photoetching mask plate according to the size of a chip on the LED wafer;
C. coating photoresist on the chip surface of the LED wafer;
D. removing the photoresist in the corresponding area of the chip by means of a photoetching mask plate through exposure and development processes;
E. coating a ferromagnetic metal layer on the LED wafer, removing the ferromagnetic metal layer in the region outside the chip, and magnetizing the ferromagnetic metal layer on the chip;
F. and removing the photoresist by using a degumming agent, and finishing the manufacture of the magnetic film on the chip.
Further, in the step E, the ferromagnetic metal layer is coated by an evaporation coating or a sputtering coating process.
Furthermore, the depth of the groove or the through hole on the transfer substrate is 0-2 microns larger than the thickness of the corresponding chip, and the length and the width of the groove or the through hole are 1-2 microns larger than the length and the width of the corresponding chip respectively.
The LED chip mass transfer device comprises a transfer substrate and a magnet, wherein a plurality of grooves or through holes matched with the shapes and the sizes of chips to be transferred are formed in the transfer substrate, and the magnet can be adsorbed on one side of the transfer substrate, matched with the plane of the transfer substrate and capable of covering the grooves or the through holes of the transfer substrate on one side.
Furthermore, the grooves or the through holes are arranged on the transfer substrate in an array manner.
The display screen manufacturing method comprises the following steps: firstly, the method for transferring LED chips in bulk according to any one of claims 1 to 7 redistributes R, G, B chips with three different colors to three transfer substrates; then, the R, G, B chips on the three transfer substrates are sequentially and integrally transferred to a film; and finally, removing the magnetic film on the chip.
As can be seen from the above description of the present invention, compared with the prior art, the beneficial effects of the present invention are:
the invention utilizes the magnetic orientation selection and the shape difference of the external dimension of the chip to form three-dimensional vector positioning and address selection parameters, and can realize the self-assembly transfer positioning of a huge amount of chips by combining a special transfer substrate. The large-scale transfer with low cost, high precision and high yield can be realized without high-precision equipment.
Drawings
Fig. 1 is a schematic perspective view of an LED wafer with a magnetic thin film according to embodiment 1 of the present invention;
fig. 2 is a schematic perspective view of a transfer substrate according to embodiment 1 of the present invention;
fig. 3 is an enlarged view at M in fig. 2.
In the figure: 1. the chip comprises a chip, 2 magnetic thin films, 3 LED wafers, 4 positioning substrates, 5 grooves and 6 transfer substrates.
Detailed Description
The invention is further described below by means of specific embodiments.
Example 1
Referring to fig. 1 to 3, the LED chip bulk transfer method of the present invention includes the following steps:
firstly, a layer of magnetic film 2 is manufactured on one surface of a chip 1, and the method specifically comprises the following steps:
a. the LED wafer 3 with the manufactured chip 1 is arranged on a positioning substrate 4, and the electrode surface of the chip 1 is far away from the positioning substrate 4;
b. manufacturing a photoetching mask plate according to the size of a chip 1 on an LED wafer 3;
c. spin-coating a thick-film photoresist on the surface of a chip 1 of the LED wafer 3;
d. removing the photoresist in the corresponding area of the chip 1 by means of a photoetching mask plate through exposure and development processes;
e. filling the corresponding region of the exposed chip 1 with magnetic powder, paramagnetic coating the magnetic powder on the LED wafer 3 by additionally arranging a magnet with the area equivalent to that of the wafer on one side of the positioning substrate 4 away from the chip 1, spraying a layer of liquid glue on the LED wafer 3, and curing the glue to firmly connect the chip 1 and the mixture layer of the magnetic powder and the glue; then, grinding the mixture layer of the magnetic powder and the glue on the LED wafer 3 by using a grinder until the photoresist between the chips is exposed, and forming magnetic thin films 2 on each chip, wherein the photoresist between the magnetic thin films 2 of the chips is isolated;
f. and removing the photoresist by using a degumming agent, and finishing the manufacture of the magnetic film 2 on the chip.
Secondly, manufacturing a transfer substrate 6 with a plurality of grooves 5 matched with the shapes and the sizes of the chips 1 according to the shapes and the sizes of the chips 1, so that the chips 1 can be selectively embedded into the groove 5 areas of the transfer substrate 6 according to the difference of physical shapes, the depth of the groove 5 on the transfer substrate 6 is 0-2 microns larger than the thickness of the corresponding chip 1, and the length and the width of the groove 5 are respectively 1-2 microns larger than the length and the width of the corresponding chip 1.
Placing a magnet on one side of the transfer substrate 6, performing redistribution selective positioning on the chips 1 with the magnetic thin films 2 by utilizing the magnetic attraction and the grooves on the transfer substrate 6, and transferring the chips into the corresponding grooves 5 of the transfer substrate 6 to realize self-assembly transfer positioning of a large number of chips 1.
The LED chip mass transfer device comprises a transfer substrate 6 and a magnet, wherein a plurality of grooves 5 matched with the shapes and the sizes of chips 1 to be transferred are formed in the transfer substrate 6, and the magnet can be adsorbed on one side of the transfer substrate 6, is matched with the plane of the transfer substrate 6 and can cover the grooves 5 of the transfer substrate 6 on one side. A plurality of grooves 5 are arranged in an array on a transfer substrate 6.
The manufacturing method of the display screen comprises the following steps: firstly, R, G, B chips 1 with three different colors are redistributed and transferred to three transfer substrates 6 according to the LED chip bulk transfer method; then, the R, G, B chips on the three transfer substrates 6 are sequentially and integrally transferred to one film; finally, the magnetic thin film 2 on the chip is removed.
Example 2
This example differs from example 1 in that: in the step (i), the method for manufacturing the magnetic thin film 2 on the chip 1 sequentially comprises the following steps:
A. the LED wafer 3 with the manufactured chip 1 is arranged on a positioning substrate 4, and the electrode surface of the chip 1 is far away from the positioning substrate 4;
B. manufacturing a photoetching mask plate according to the size of a chip 1 on an LED wafer 3;
C. spin-coating thick-film photoresist on the chip surface of the LED wafer 3;
D. removing the photoresist in the corresponding area of the chip 1 by means of a photoetching mask plate through exposure and development processes;
E. coating a ferromagnetic metal layer on the LED wafer 3 by adopting an evaporation coating or sputtering coating process, removing the ferromagnetic metal layer in the region except the chip 1, and magnetizing the ferromagnetic metal layer on the chip 1, wherein the ferromagnetic metal layer is a metallic iron film;
F. and removing the photoresist by using a degumming agent, and finishing the manufacture of the magnetic film 2 on the chip 1.
Example 3
This example differs from example 1 in that: in the second step, a transfer substrate 6 with a plurality of through holes matched with the shape and the size of the chip 1 is manufactured according to the shape and the size of the chip 1, so that the chips 1 can be selectively embedded into the through holes according to the difference of physical shapes and can leak through the transfer substrate 6 from the through holes. The depth of the through hole on the transfer substrate 6 is 0-2 microns larger than the thickness of the corresponding chip 1, and the length and the width of the through hole are respectively 1-2 microns larger than the length and the width of the corresponding chip 1.
The above description is only three specific embodiments of the present invention, but the design concept of the present invention is not limited thereto, and any insubstantial modifications made by using the design concept should fall within the scope of infringing the present invention.
Claims (10)
- The LED chip mass transfer method is characterized by comprising the following steps: the method comprises the following steps:firstly, manufacturing a layer of magnetic film on one surface of a chip;manufacturing a transfer substrate with a plurality of grooves or through holes matched with the shapes and the sizes of the chips according to the shapes and the sizes of the chips, so that the chips can be selectively embedded into the groove areas or the through holes of the transfer substrate according to the difference of physical shapes;placing a magnet on one side of the transfer substrate, performing redistribution selective positioning on a plurality of chips with magnetic films by utilizing the magnetic attraction and the grooves or the through holes on the transfer substrate, and transferring the chips into the corresponding grooves or the through holes of the transfer substrate to realize the self-assembly transfer positioning of a large number of chips.
- 2. The LED chip bulk transfer method of claim 1, wherein: the magnetic film in the step (i) is made of magnetic substances or ferromagnetic metals.
- 3. The LED chip bulk transfer method according to claim 1 or 2, wherein: in the step (i), the method for manufacturing the magnetic thin film on the chip sequentially comprises the following steps:a. arranging the LED wafer with the manufactured chip on a positioning substrate, wherein the electrode surface of the chip is far away from the positioning substrate;b. manufacturing a photoetching mask plate according to the size of a chip on the LED wafer;c. coating photoresist on the chip surface of the LED wafer;d. removing the photoresist in the corresponding area of the chip by means of a photoetching mask plate through exposure and development processes;e. filling the exposed corresponding area of the chip with magnetic powder, paramagnetic the magnetic powder on the LED wafer by additionally arranging a magnet on one side of the positioning substrate, which is far away from the chip, and fixedly connecting the magnetic powder layer on the surface of the chip by glue;f. and removing the photoresist by using a degumming agent, and finishing the manufacture of the magnetic film on the chip.
- 4. The LED chip bulk transfer method of claim 3, wherein: in the step e, after paramagnetic of the magnetic powder on the LED wafer, spraying a layer of liquid glue on the LED wafer, and curing the glue to enable the chip to be firmly connected with the mixture layer of the magnetic powder and the glue; and then, grinding the mixture layer of the magnetic powder and the glue on the LED wafer by using a grinder until the photoresist between the chips is exposed, and forming magnetic thin films on each chip with photoresist isolation between the magnetic thin films of the chips.
- 5. The LED chip bulk transfer method according to claim 1 or 2, wherein: in the step (i), the method for manufacturing the magnetic thin film on the chip sequentially comprises the following steps:A. arranging the LED wafer with the manufactured chip on a positioning substrate, wherein the electrode surface of the chip is far away from the positioning substrate;B. manufacturing a photoetching mask plate according to the size of a chip on the LED wafer;C. coating photoresist on the chip surface of the LED wafer;D. removing the photoresist in the corresponding area of the chip by means of a photoetching mask plate through exposure and development processes;E. coating a ferromagnetic metal layer on the LED wafer, removing the ferromagnetic metal layer in the region outside the chip, and magnetizing the ferromagnetic metal layer on the chip;F. and removing the photoresist by using a degumming agent, and finishing the manufacture of the magnetic film on the chip.
- 6. The LED chip bulk transfer method of claim 5, wherein: and in the step E, the coated ferromagnetic metal layer adopts an evaporation coating or sputtering coating process.
- 7. The LED chip bulk transfer method of claim 1, wherein: the depth of the groove or the through hole on the transfer substrate is 0-2 microns larger than the thickness of the corresponding chip, and the length and the width of the groove or the through hole are 1-2 microns larger than the length and the width of the corresponding chip respectively.
- LED chip bulk transfer device, its characterized in that: the chip transferring device comprises a transferring substrate and a magnet, wherein a plurality of grooves or through holes matched with the shapes and the sizes of chips to be transferred are formed in the transferring substrate, and the magnet can be adsorbed on one side of the transferring substrate, matched with the plane of the transferring substrate and capable of covering the grooves or the through holes of the transferring substrate on one side.
- 9. The LED chip bulk transfer apparatus of claim 8, wherein: the grooves or the through holes are arranged on the transfer substrate in an array manner.
- 10. The display screen manufacturing method is characterized by comprising the following steps: the method comprises the following steps: firstly, the method for transferring LED chips in bulk according to any one of claims 1 to 7 redistributes R, G, B chips with three different colors to three transfer substrates; then, the R, G, B chips on the three transfer substrates are sequentially and integrally transferred to a film; and finally, removing the magnetic film on the chip.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011281009.6A CN112435946A (en) | 2020-11-16 | 2020-11-16 | LED chip mass transfer method, transfer device and display screen manufacturing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011281009.6A CN112435946A (en) | 2020-11-16 | 2020-11-16 | LED chip mass transfer method, transfer device and display screen manufacturing method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN112435946A true CN112435946A (en) | 2021-03-02 |
Family
ID=74700173
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202011281009.6A Pending CN112435946A (en) | 2020-11-16 | 2020-11-16 | LED chip mass transfer method, transfer device and display screen manufacturing method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN112435946A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113921680A (en) * | 2021-09-30 | 2022-01-11 | Tcl华星光电技术有限公司 | Mass transfer method |
| CN113948617A (en) * | 2021-09-03 | 2022-01-18 | 深圳市科伦特电子有限公司 | Large transfer method of Micro LED chips, Micro LED display screen and display equipment |
| CN114220828A (en) * | 2021-12-13 | 2022-03-22 | 深圳市华星光电半导体显示技术有限公司 | Mass transfer method and mass transfer carrier for Micro-LED chip |
| CN114447185A (en) * | 2022-01-25 | 2022-05-06 | Tcl华星光电技术有限公司 | Micro LED lamp, transfer device thereof and spray type mass transfer method |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110379759A (en) * | 2019-07-05 | 2019-10-25 | 深超光电（深圳）有限公司 | Adsorbent equipment, transfer system and transfer method |
| CN110611018A (en) * | 2019-10-21 | 2019-12-24 | 深圳市思坦科技有限公司 | LED chip transfer method, substrate and system |
| CN110690247A (en) * | 2019-10-16 | 2020-01-14 | 南方科技大学 | Display device and massive transfer method of LED chips |
| CN111816751A (en) * | 2019-04-12 | 2020-10-23 | 云谷（固安）科技有限公司 | Micro light-emitting diode display panel and preparation method thereof |
-
2020
- 2020-11-16 CN CN202011281009.6A patent/CN112435946A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111816751A (en) * | 2019-04-12 | 2020-10-23 | 云谷（固安）科技有限公司 | Micro light-emitting diode display panel and preparation method thereof |
| CN110379759A (en) * | 2019-07-05 | 2019-10-25 | 深超光电（深圳）有限公司 | Adsorbent equipment, transfer system and transfer method |
| CN110690247A (en) * | 2019-10-16 | 2020-01-14 | 南方科技大学 | Display device and massive transfer method of LED chips |
| CN110611018A (en) * | 2019-10-21 | 2019-12-24 | 深圳市思坦科技有限公司 | LED chip transfer method, substrate and system |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113948617A (en) * | 2021-09-03 | 2022-01-18 | 深圳市科伦特电子有限公司 | Large transfer method of Micro LED chips, Micro LED display screen and display equipment |
| CN113948617B (en) * | 2021-09-03 | 2022-08-30 | 深圳市科伦特电子有限公司 | Large transfer method of Micro LED chips, Micro LED display screen and display equipment |
| CN113921680A (en) * | 2021-09-30 | 2022-01-11 | Tcl华星光电技术有限公司 | Mass transfer method |
| CN113921680B (en) * | 2021-09-30 | 2023-09-01 | Tcl华星光电技术有限公司 | Mass transfer method |
| CN114220828A (en) * | 2021-12-13 | 2022-03-22 | 深圳市华星光电半导体显示技术有限公司 | Mass transfer method and mass transfer carrier for Micro-LED chip |
| CN114220828B (en) * | 2021-12-13 | 2023-10-03 | 深圳市华星光电半导体显示技术有限公司 | Mass transfer method of Micro-LED chip and transfer carrier used for method |
| CN114447185A (en) * | 2022-01-25 | 2022-05-06 | Tcl华星光电技术有限公司 | Micro LED lamp, transfer device thereof and spray type mass transfer method |
| CN114447185B (en) * | 2022-01-25 | 2023-10-17 | Tcl华星光电技术有限公司 | Micro LED lamp and transfer device and spray type huge transfer method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN112435946A (en) | LED chip mass transfer method, transfer device and display screen manufacturing method | |
| US10008465B2 (en) | Methods for surface attachment of flipped active components | |
| CN103811394B (en) | Carrier wafer and manufacture method thereof and method for packing | |
| CN104716103B (en) | Underfill pattern with gap | |
| CN110634840B (en) | Detection substrate, preparation method thereof, detection device and detection method | |
| CN103325703A (en) | Probing chips during package formation | |
| CN104465418B (en) | A kind of fan-out wafer level packaging methods | |
| CN101425469A (en) | Semi-conductor packaging method using large size panel | |
| TWI791128B (en) | Component transfer method and transfer board used in the method | |
| CN101431034B (en) | Method for multi-chip plane packaging | |
| CN112002792B (en) | Method for preparing LED display by electrophoretic assembly | |
| CN109119344A (en) | The method of manufacturing technology of semiconductor packages and semiconductor packages | |
| CN107123604A (en) | A kind of method for packing of double-faced forming | |
| CN107731985B (en) | A kind of high-precision locating method of LED chip array arrangement | |
| CN206134648U (en) | Fan -out type packaging structure | |
| US11961750B2 (en) | Magnetic transfer apparatus and fabrication method of the same | |
| CN101431050B (en) | Manufacture the method for multiple semiconductor devices | |
| Kuran et al. | Integration of laser die transfer and magnetic self-assembly for ultra-thin chip placement | |
| CN108321113A (en) | Fan-out package method | |
| TW201840260A (en) | Manufacturing method of inspection fixture may not damage the inspected object and can correspond to micro-spacing while inspecting electric property | |
| CN104103529A (en) | Fan out type square piece level semiconductor three dimension chip packaging technology | |
| CN117012696B (en) | Manufacturing method of mini-LED core board by utilizing electromagnetic force transfer | |
| TWI726691B (en) | Method of automatic wafer die alignment and array and device thereof, and wafer containing magnetic substance layer | |
| TWI776349B (en) | Transfer method of electronic component | |
| TWI777372B (en) | Die transfer plate and die transfer method using thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| TA01 | Transfer of patent application right | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20220901 Address after: 1104-E21, 11th Floor, Life Insurance Building, No. 1001, Fuzhong 1st Road, Fuzhong Community, Lianhua Street, Futian District, Shenzhen, Guangdong 518000 Applicant after: Shenzhen Rewo Micro Semiconductor Technology Co.,Ltd. Address before: 116000 3-3-1, 48 Heishijiao street, Shahekou District, Dalian City, Liaoning Province Applicant before: Shen Guang |