TWI777372B - Die transfer plate and die transfer method using thereof - Google Patents

Die transfer plate and die transfer method using thereof Download PDF

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TWI777372B
TWI777372B TW110101803A TW110101803A TWI777372B TW I777372 B TWI777372 B TW I777372B TW 110101803 A TW110101803 A TW 110101803A TW 110101803 A TW110101803 A TW 110101803A TW I777372 B TWI777372 B TW I777372B
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die
magnetic
suction heads
magnetic suction
dies
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TW110101803A
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TW202230562A (en
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吳國誠
劉台徽
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石傑中
吳欣達
劉仲熙
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Abstract

The present invention relates a die transfer plate and die transfer method using thereof. The die transfer plate of the present invention has a plurality of suckers, which allows simultaneously transferring and positioning a plurality of dies. The size of the suckers is in micro scale and thus the suckers are suitable for mass transferring micro-LED. The die transfer method of the present invention can use a plural of die transfer plates of the present invention to transfer dies onto a plural of boards, enhancing efficiency for transferring.

Description

晶粒移取吸盤及使用其之晶粒移取之方法Die removal chuck and method of die removal using the same

本發明係關於一種晶粒移取吸盤及使用其之晶粒移取之方法,該晶粒移取吸盤特別可用於巨量轉移微發光二極體(Micro-LED)。The present invention relates to a die-removing chuck and a die-removing method using the same. The die-removing chuck is particularly useful for mass transfer of Micro-LEDs.

Micro-LED係微尺寸大小的LED,相較於傳統LED,Micro-LED的每個像素點均可獨立調整其亮度及定址,在反應速度、電力消耗及耐用度上有相當優勢,且無需要背光及彩色濾光片,能直接以紅藍綠三原色提供絕佳的色度及飽和度,當高密集度排列作為顯示裝置時,即可提供高品質的畫質。近期,更發展出將Micro-LED搭配柔性面板材料,做出更輕、更薄的顯示器,應用於穿戴裝置或其他曲面顯示器。Micro-LED is a micro-sized LED. Compared with traditional LED, each pixel of Micro-LED can independently adjust its brightness and address. It has considerable advantages in response speed, power consumption and durability. The backlight and color filter can directly provide excellent chroma and saturation with the three primary colors of red, blue and green. When the high-density arrangement is used as a display device, it can provide high-quality image quality. Recently, Micro-LEDs have been developed with flexible panel materials to make lighter and thinner displays for wearable devices or other curved displays.

然而,Micro-LED於製造上一直面臨著如何將巨量及微小尺寸的晶粒排列至電路板、或襯墊上的問題。因此,巨量轉移及接合係目前Micro-LED的關鍵技術。巨量轉移及接合需要有一定的高精準度,良率的多寡攸關產能的成本。現有的晶粒取放(pick-and-place)技術雖可將晶粒高密度陣列排序至電路板,但一次僅能一次完成單顆移轉,在製程上非常耗時及耗能。以55吋的顯示器為例,其面板上須放置622萬顆Micro-LED才可有高解析度的顯示像素,相當的費力耗時。However, Micro-LEDs have been faced with the problem of how to arrange huge and tiny sized dies on circuit boards or pads. Therefore, mass transfer and bonding are the key technologies of Micro-LED at present. Mass transfer and bonding requires a certain degree of high precision, and the yield is related to the cost of production capacity. Although the existing pick-and-place technology can sort a high-density array of dies onto a circuit board, it can only transfer a single die at a time, which is very time-consuming and energy-consuming in the process. Taking a 55-inch display as an example, 6.22 million Micro-LEDs must be placed on the panel to have high-resolution display pixels, which is quite labor-intensive and time-consuming.

為解決pick-and-place的缺陷,市場上許多業者欲開出能一次移轉多顆晶粒的技術,原理不外乎流體飄移、靜電、沾黏或真空等方法。然而,於實際操作上,均面臨到晶粒脫落及移轉晶粒時排列不齊等問題,難以提升Micro-LED顯示器的良率及產能。In order to solve the defects of pick-and-place, many manufacturers in the market want to develop a technology that can transfer multiple dies at one time. However, in actual operation, there are problems such as die falling off and uneven arrangement when transferring die, which makes it difficult to improve the yield and production capacity of Micro-LED displays.

是以,本發明之目的為提供一種晶粒移取吸盤,其包含:一基板;複數個磁性吸頭,設置於該基板之一側面;其中,該複數個磁性吸頭之大小為欲移取之晶粒大小的40%至85%。Therefore, the purpose of the present invention is to provide a chip removal chuck, which includes: a substrate; a plurality of magnetic suction heads arranged on one side of the substrate; wherein, the size of the plurality of magnetic suction heads is to be removed 40% to 85% of the grain size.

進一步地,該複數個磁性吸頭係呈直線排列或陣列排序。Further, the plurality of magnetic suction heads are arranged in a straight line or in an array.

進一步地,該晶粒移取吸盤移取晶粒時,該複數個磁性吸頭係部份磁性吸頭具有磁性吸引力,且該部份磁性吸頭彼此之間具有相當的距離。Further, when the die-removing chuck removes the die, some of the plurality of magnetic suction heads have magnetic attraction, and some of the magnetic suction heads have a considerable distance from each other.

進一步地,該透明基板上設有對位標誌(alignment mark)。Further, an alignment mark is provided on the transparent substrate.

進一步地,該基板為透明基板。Further, the substrate is a transparent substrate.

進一步地,該晶粒移取吸盤更包含一攝像單元,設置在該基板的上方可用於吸盤及晶圓之對位。Further, the die removing suction cup further includes a camera unit, which is arranged above the substrate and can be used for alignment of the suction cup and the wafer.

進一步地,該複數個磁性吸頭係藉由光蝕刻所形成。Further, the plurality of magnetic suction heads are formed by photo-etching.

本發明之目的為提供一種晶粒移取之方法,其步驟包含:(a) 提供至少一個經切割後形成複數個晶粒所組成之晶圓,且各該複數個晶粒均具有磁性吸引力;(b) 使用至少一本發明之晶粒移取吸盤,藉由該複數個磁性吸頭移取部份之複數個晶粒至至少一具有磁性吸引力的載板,且該載板的磁性吸引力 > 複數個磁性吸頭的磁性吸引力> 各該複數個晶粒的磁性吸引力,使該部份之複數個晶粒可由複數個磁性吸頭移轉至該載板上;及(c) 重複該步驟(b)直到載板所需的晶粒移轉完成。An object of the present invention is to provide a method for removing die, the steps of which include: (a) providing at least one wafer formed by dicing to form a plurality of die, and each of the plurality of die has a magnetic attraction force ; (b) using at least one chip removal chuck of the present invention, using the plurality of magnetic suction heads to remove a portion of the plurality of chips to at least one carrier plate with magnetic attraction, and the magnetic force of the carrier plate is Attractive force > magnetic attractive force of the plurality of magnetic suction heads > magnetic attractive force of each of the plurality of die, so that the plurality of die of the portion can be transferred to the carrier by the plurality of magnetic suction heads; and (c ) Repeat this step (b) until the desired die transfer for the carrier is completed.

進一步地,該步驟(a)之晶圓為至少三個,且該三個晶圓之顏色相異。Further, there are at least three wafers in the step (a), and the colors of the three wafers are different.

進一步地,該步驟(b)中,對應每一該晶圓使用兩個晶粒移取吸盤,該兩個晶粒移取吸盤將複數個晶粒移轉至設於晶圓相對應兩側之載板。Further, in the step (b), two die removal chucks are used for each of the wafers, and the two die removal chucks transfer a plurality of dies to the wafers disposed on the corresponding two sides of the wafer. carrier board.

進一步地,該晶圓具有至少一對位標誌。Further, the wafer has at least one pair of alignment marks.

相較於習知技術,本發明具有以下優勢:Compared with the prior art, the present invention has the following advantages:

1. 本發明之晶粒移取吸盤具有複數個磁性吸頭,其中具有磁性吸引力的部份吸頭為等間距的陣列排序或直線排序,可將複數顆晶粒移取至載板並完成排列,提高移取晶粒的效率及精準度。另外,該複數個磁性吸頭係使用光蝕刻所完成,尺寸微小,欲移取之晶粒大小的40%至85%,因此能夠有效對位並降低移動時的對位錯誤(error),適於移取MicroLED晶粒。1. The chip removal chuck of the present invention has a plurality of magnetic suction heads, and some of the suction heads with magnetic attraction are arranged in an array or linear order with equal spacing, and a plurality of chips can be transferred to the carrier and completed Arrangement to improve the efficiency and accuracy of removing die. In addition, the plurality of magnetic tips are completed by photo-etching, and the size is small, which is 40% to 85% of the size of the grains to be removed, so it can effectively align and reduce the alignment error during movement. To remove the MicroLED die.

2. 本發明之晶粒移取之方法可使用多個晶粒移取吸盤同步將晶粒移取至多個載板上,提高製程效率。另外,藉由該載板的磁性吸引力 > 複數個磁性吸頭的磁性吸引力> 各該複數個晶粒的磁性吸引力之磁性吸引力排序,能有效提升移取晶粒的穩定性,使晶粒在移取過程中不會脫落。2. The method for transferring die of the present invention can use a plurality of die transferring suction cups to simultaneously transfer the die to a plurality of carriers, thereby improving the process efficiency. In addition, by the magnetic attraction of the carrier > the magnetic attraction of the plurality of magnetic heads > the magnetic attraction of the magnetic attraction of the plurality of crystal grains, the stability of removing the crystal grains can be effectively improved, so that the The grains do not fall off during the removal process.

有關本發明之詳細說明及技術內容,現就配合圖式說明如下。再者,本發明中之圖式,為說明方便,其比例未必照實際比例繪製,該等圖式及其比例並非用以限制本發明之範圍,在此先行敘明。The detailed description and technical content of the present invention are described below with reference to the drawings. Furthermore, the drawings in the present invention are not necessarily drawn according to the actual scale for the convenience of description. These drawings and their scales are not intended to limit the scope of the present invention, and are described here in advance.

本文中所使用之詞彙「包含或包括(comprise or include)」意謂著除了描述的組成、步驟、操作指令及/或元素以外,不排除一或多個其他組成、步驟、操作指令及/或存在或附加元素。所使用之詞彙「大約或約(about or approximately)」意指具有接近或可允許的誤差範圍,用於避免本發明所揭示之準確或絕對的數值受未知的第三方非法或非正當使用。詞彙「一」意指該冠詞之語法對象為一或一個以上(例如:至少為一)。The term "comprise or include" as used herein means that in addition to the described components, steps, operational instructions and/or elements, one or more other components, steps, operational instructions and/or elements are not excluded Existing or appending elements. The term "about or approximately" as used means having an approximate or permissible margin of error to avoid illegal or improper use by unknown third parties of exact or absolute values disclosed herein. The word "a" means that the grammatical object of the article is one or more than one (eg, at least one).

本發明中,所述的「載板」係指複數個晶粒被移取後所放置的片狀物件,例如電路板或襯墊,載板的尺寸大小為依據所要製備的顯示裝置的尺寸大小而定。In the present invention, the "carrier board" refers to a sheet-like object, such as a circuit board or a spacer, placed after a plurality of dies are removed. The size of the carrier board is based on the size of the display device to be prepared. Depends.

請參閱圖1至3,分別係本發明之晶粒移取吸盤的仰視圖及側視圖、切割後的晶圓的示意圖。Please refer to FIGS. 1 to 3 , which are respectively a bottom view and a side view of the die removing chuck of the present invention, and a schematic diagram of a cut wafer.

如圖1及2所示,本發明之晶粒移取吸盤T包含一基板S及複數個磁性吸頭H,該複數個磁性吸頭H設置於該基板S之一側面。,該磁性吸頭H與磁性吸頭H之間有複數個無磁性吸頭H’,使兩兩該磁性吸頭H之間具有相當的距離,例如圖1中,黑色代表的磁性吸頭H具有磁性吸引力,二個黑色的磁性吸頭H之間有六顆以白色代表的無磁性吸頭H’。由於兩兩磁性吸頭H之間具有相當的距離,於吸取晶粒D時,該磁性吸頭H之間的磁性吸引力比較不會影響到彼此。As shown in FIGS. 1 and 2 , the die removal chuck T of the present invention includes a substrate S and a plurality of magnetic suction heads H, and the plurality of magnetic suction heads H are disposed on one side of the substrate S. , there are a plurality of non-magnetic suction heads H' between the magnetic suction heads H and the magnetic suction heads H, so that there is a considerable distance between the two magnetic suction heads H. For example, in Figure 1, the magnetic suction heads H represented by black With magnetic attraction, there are six non-magnetic tips H' represented by white between the two black magnetic tips H. Since there is a considerable distance between the two magnetic suction heads H, when sucking the die D, the magnetic attraction force between the magnetic suction heads H will not affect each other.

由於載板係最終會製成產品的構件(例如顯示裝置的面板),因此,該磁性吸頭H的間距是依據載板所欲放置晶粒D之間的間距及數量所設定,且可依照晶圓W的尺寸大小、欲切割成的晶粒D尺寸大小調整,載板上的每一顆晶粒D的長度及其與下一顆晶粒D之間的間距的長度總和為該切割後晶圓W上的每一顆晶粒D的長度及其與下一顆晶粒D之間的間距長度總和的倍數。具體而言,如圖9所示,載板P1及P2分別具有六個晶粒放置區塊P11至P16及P21至P26,每一晶粒放置區塊P11至P16及P21至P26上需放置的晶粒D為25顆,其陣列排序為5×5(即長度及寬度分別需放置各有5顆晶粒D,需放置的每一顆晶粒D的長度為0.1mm,需放置的每一顆晶粒D的長度與下一顆晶粒D之間的間距的長度總和1mm。依據該載板P1及P2欲放置的晶粒D之間距及數量而設定,該切割後晶圓W的每一顆晶粒D的長度為0.1mm,晶粒D之間的間距為0.025mm,即該切割後晶圓W的每一顆晶粒D的長度及其與下一顆晶粒D之間的間距長度總和為0.125mm,0.125mm的八倍為1mm,1mm即為該載板P1及P2上的每一顆晶粒D的長度及其與下一顆晶粒D之間的間距的長度總和,二者成倍數關係。依據該載板P1及P2欲放置的晶粒D之間距及數量而設定,該晶粒移取吸盤T的該部份磁性吸頭H設定為陣列排序5×5(即長度及寬度分別需放置各有5顆晶粒D),於移取晶粒D時,該部份磁性吸頭H所吸取的該晶粒D分布恰好對應於每一晶粒放置區塊P11至P16及P21至P26上需放置晶粒D的陣列排序5×5;於另一實施方式中,該複數個磁性吸頭H可為直線排序,該部份磁性吸頭H則設定為直線排序1×5,於移取晶粒D時,該部份磁性吸頭H所吸取的該晶粒D恰好對應於每一晶粒放置區塊P11至P16及P21至P26上需放置晶粒D之陣列排序5×5的其中一行列,依序進行五次移取晶粒D之後,即陣列排序出5×5。藉此,不同於習知pick-and-place技術在移取晶粒時為一次僅能一次完成單顆移轉、且每次放置晶粒都需要重新對位出載板上晶粒之間的間距,本發明之晶粒移取吸盤T可同時移取多顆晶粒D,且晶粒D之間的距離已為固定距離,有效提高移取效率及精準度。Since the carrier plate will eventually be made into a product component (such as a panel of a display device), the distance between the magnetic suction heads H is set according to the distance and number of dies D to be placed on the carrier plate, and can be set according to the The size of the wafer W and the size of the die D to be cut are adjusted, and the sum of the length of each die D on the carrier and the length of the distance between it and the next die D is the cut The multiple of the length of each die D on the wafer W and the sum of the length of the distance between it and the next die D. Specifically, as shown in FIG. 9 , the carriers P1 and P2 respectively have six die placement blocks P11 to P16 and P21 to P26. Each die placement block P11 to P16 and P21 to P26 needs to be placed The number of dies D is 25, and the array order is 5×5 (that is, 5 dies D need to be placed in the length and width respectively, and the length of each die D to be placed is 0.1 mm, and each The sum of the length of the die D and the distance between the next die D is 1 mm. It is set according to the distance and quantity of the die D to be placed on the carriers P1 and P2. The length of a die D is 0.1 mm, and the distance between the die D is 0.025 mm, that is, the length of each die D of the wafer W after the dicing and the distance between it and the next die D. The total length of the spacing is 0.125mm, and the eight times of 0.125mm is 1mm, and 1mm is the length of each die D on the carrier P1 and P2 and the length of the distance between the next die D and the sum of the lengths , the two are in a multiple relationship. Set according to the distance and quantity of the chips D to be placed on the carriers P1 and P2, and the part of the magnetic suction head H of the chip removal chuck T is set to an array order of 5×5 ( That is, there are 5 dies D in the length and width respectively. When removing the dies D, the distribution of the dies D sucked by the part of the magnetic suction head H just corresponds to each die placement block P11 The array order of the dies D to be placed on P16 and P21 to P26 is 5×5; in another embodiment, the plurality of magnetic suction heads H can be arranged in a straight line, and the part of the magnetic suction heads H is set to be arranged in a straight line 1×5, when removing the die D, the die D picked up by the part of the magnetic suction head H just corresponds to the place where the die D needs to be placed on each die placement block P11 to P16 and P21 to P26. One of the rows and columns of the 5×5 array is sorted, and after removing the die D for five times in sequence, the array is sorted into 5×5. Therefore, different from the conventional pick-and-place technology when removing the die, the Only a single die transfer can be completed at a time, and each time a die is placed, the spacing between the die on the carrier board needs to be re-aligned. The die removal chuck T of the present invention can simultaneously remove multiple die D. , and the distance between the die D is a fixed distance, which effectively improves the removal efficiency and accuracy.

該複數個磁性吸頭H係藉由光蝕刻所形成,該光蝕刻之方法可為半導體製程之光蝕刻方法,具體例如:將光阻劑及磁性物質之粉體混合,塗佈至一作為晶粒移取吸盤T的板體結構後,曝光顯影,進行蝕刻;或是將磁性物質之粉體先塗佈至該板體結構後,再塗佈光阻劑後曝光顯影,進行蝕刻。藉由光蝕刻方法能夠製造出尺寸微小的磁性吸頭H,每一磁性吸頭H的尺寸(面積)可舉例為50 µm x 50µm、40 µm x 40µ、30 µm x 30µm,然上開尺寸大小並不限定,並可視使用者需要調整。每一該磁性吸頭H之面積大小為所欲移取之晶粒D面積大小的40%至85%;當磁性吸頭H面積大小比該晶粒D面積小且於前述適宜大小範圍之時,該磁性吸頭H能精準對位至所欲移動的晶粒D,不會產生馬達對位錯誤(error)而移取到錯誤的晶粒D,具體例如40%、45%、50%、55%、60%、65%、70%、75%、80%或85%等,本發明並不予以限制。該複數個磁性吸頭H的磁性物質可為永久磁鐵或電磁鐵。當該複數個磁性吸頭H的磁性物質為永久磁鐵時,其磁性吸引力方向為固定,即可省略磁性吸引力方向切換時間。當該複數個磁性吸頭H的磁性物質為電磁鐵時,可視需要調整每一顆磁性吸頭H的磁性吸引力大小及方向,以及該部份磁性吸頭H的位置,例如。如圖1所示,該部份磁性吸頭H為黑色表示之磁性吸頭H,具有磁性吸引力,以座標軸表示分別位於位置(1,5)、(1,10)、(1,15)、(1,20)、(1,25)、(5,5)、(5,10)、(5,15)、(5,20)、(5,25)、(10,5)、(10,10)、(10,15)、(10,20)、(10,25)、(15,5)、(15,10)、(15,15)、(15,20)、(15,25)、(20,5)、(20,10)、(20,15)、(20,20)、(20,25)、(1,5)、(25,10)、(25,15)、(25,20)、(25,25),而可視需要將位置(2,5)、(2,10)、(2,15)、(2,20)、(2,25)、(6,5)、(6,10)、(6,15)、(6,20)、(6,25)、(11,5)、(11,10)、(11,15)、(11,20)、(11,25)、(16,5)、(16,10)、(16,15)、(16,20)、(16,25)、(21,5)、(21,10)、(21,15)、(21,20)、(21,25)、(26,5)、(26,10)、(26,15)、(26,20)、(26,25)之白色表示的無磁性吸頭H’使其等具有磁性吸引力,以作為磁性吸頭H。The plurality of magnetic suction heads H are formed by photo-etching, and the photo-etching method can be a photo-etching method in a semiconductor manufacturing process. After the plate structure of the suction cup T is removed, exposure and development are performed to perform etching; or the powder of the magnetic material is first coated on the plate structure, and then a photoresist is applied, and then exposure and development are performed to perform etching. The small size of the magnetic tip H can be fabricated by the photo-etching method. The size (area) of each magnetic tip H can be exemplified as 50 µm x 50 µm, 40 µm x 40 µ, 30 µm x 30 µm, and then open the size. It is not limited, and can be adjusted according to user needs. The area size of each of the magnetic suction heads H is 40% to 85% of the area size of the chip D to be removed; when the area size of the magnetic suction head H is smaller than the area of the chip D and is within the aforementioned suitable size range , the magnetic suction head H can be precisely aligned to the desired die D, and will not cause motor alignment errors (error) to move the wrong die D, such as 40%, 45%, 50%, 55%, 60%, 65%, 70%, 75%, 80% or 85%, etc., which are not limited in the present invention. The magnetic substance of the plurality of magnetic suction heads H may be permanent magnets or electromagnets. When the magnetic substances of the plurality of magnetic suction heads H are permanent magnets, the direction of the magnetic attraction force is fixed, and the switching time of the direction of the magnetic attraction force can be omitted. When the magnetic material of the plurality of magnetic suction heads H is an electromagnet, the magnitude and direction of the magnetic attraction force of each magnetic suction head H and the position of the part of the magnetic suction heads H can be adjusted as needed, eg. As shown in Figure 1, this part of the magnetic suction head H is the magnetic suction head H shown in black, which has a magnetic attractive force, and is located at positions (1,5), (1,10), (1,15) respectively as shown by the coordinate axis. , (1,20), (1,25), (5,5), (5,10), (5,15), (5,20), (5,25), (10,5), ( 10,10), (10,15), (10,20), (10,25), (15,5), (15,10), (15,15), (15,20), (15, 25), (20,5), (20,10), (20,15), (20,20), (20,25), (1,5), (25,10), (25,15) , (25,20), (25,25), and the positions (2,5), (2,10), (2,15), (2,20), (2,25), (6 ,5), (6,10), (6,15), (6,20), (6,25), (11,5), (11,10), (11,15), (11,20 ), (11,25), (16,5), (16,10), (16,15), (16,20), (16,25), (21,5), (21,10), (21,15), (21,20), (21,25), (26,5), (26,10), (26,15), (26,20), (26,25) in white The non-magnetic suction head H' makes it magnetically attractive to act as the magnetic suction head H.

如圖3所示,該切割後的晶圓W的每一該晶粒D具有磁性層,各自具有獨立的磁性吸引力,且彼此相鄰的該晶粒D具有不同方向的磁性吸引力,斜紋的晶粒D的磁性吸引力方向為N極,無斜紋的晶粒D的磁性吸引力方向為S極。藉此,該部份磁性吸頭H接近該晶粒D時,藉由磁性吸引力方向相異而能吸取到的欲移轉晶粒D,並因磁性吸引力方向相同而排斥彼鄰的周邊晶粒D,以達到精準對位移取欲移轉晶粒D。具體而言,當該部份磁性吸頭H之磁性吸引力方向為N極,欲移轉晶粒D之磁性吸引力方向為S極,該部份磁性吸頭H靠近切割後的晶圓W時,該部份磁性吸頭H可吸取所欲移取的晶粒D (N極與S極互相吸引),並排斥彼鄰該欲移取的晶粒D的周邊晶粒D(N極與N極互相排斥),使該晶粒移取吸盤T能正確移取所欲移取的晶粒D,防止錯誤移取到其他晶粒D。As shown in FIG. 3 , each die D of the diced wafer W has a magnetic layer, each of which has an independent magnetic attraction force, and the die D adjacent to each other have magnetic attraction forces in different directions, and the diagonal lines The magnetic attraction direction of the crystal grains D is the N pole, and the magnetic attraction direction of the non-twill crystal grains D is the S pole. In this way, when the part of the magnetic suction head H approaches the die D, the to-be-transferred die D can be sucked by the magnetic attraction direction, and the adjacent peripheries will be repelled because the magnetic attraction direction is the same. Die D, in order to achieve accurate displacement of the die D to be transferred. Specifically, when the magnetic attraction direction of the part of the magnetic suction head H is the N pole, and the magnetic attraction direction of the die D to be transferred is the S pole, the part of the magnetic suction head H is close to the diced wafer W At the same time, the part of the magnetic suction head H can absorb the chip D to be removed (the N pole and the S pole attract each other), and repel the surrounding chips D adjacent to the chip D to be removed (the N pole and the S pole are attracted to each other) The N poles repel each other), so that the die removing chuck T can correctly remove the desired die D, and prevent other die D from being erroneously removed.

於一較佳實施例中,該基板S上設有對位標誌F,該對位標誌F能對應該晶圓W上的對位件F’,利於二者對位。In a preferred embodiment, an alignment mark F is provided on the substrate S, and the alignment mark F can correspond to the alignment member F' on the wafer W, which facilitates the alignment of the two.

於一較佳實施例中,該基板S為透明基板,該晶粒移取吸盤T更包含一攝像單元C,該攝像單元C設置在該基板S的上方可用於晶粒移取吸盤T及晶圓W之對位,進行自動對位補正。In a preferred embodiment, the substrate S is a transparent substrate, and the die removal chuck T further includes a camera unit C, which is disposed above the substrate S and can be used for the die removal chuck T and the die removal chuck T. For the alignment of circle W, automatic alignment correction is performed.

請參閱圖4至6、7至9係本發明之晶粒移取之方法的側視圖(一)至(三)及俯視圖(一)至(三);圖7至9中,晶粒移取吸盤T1及T2分別係以虛線方塊所表示。Please refer to FIGS. 4 to 6, 7 to 9, which are the side views (1) to (3) and the top views (1) to (3) of the method for removing the die according to the present invention; in FIGS. 7 to 9, the die removing The suction cups T1 and T2 are represented by dashed squares, respectively.

本發明之晶粒移取之方法,其步驟包含:(a)提供一個經切割後形成複數個晶粒D所組成之晶圓W,且各該複數個晶粒D均具有磁性吸引力;(b) 使用二個本發明之晶粒移取吸盤T1及T2,藉由該複數個磁性吸頭H移取部份之複數個晶粒D至具有磁性吸引力的載板P1及P2,且該載板P1及P2的磁性吸引力 > 複數個磁性吸頭H的磁性吸引力> 各該複數個晶粒D的磁性吸引力,使該部份之複數個晶粒D可由複數個磁性吸頭H移轉至該載板P1及P2上;及(c) 重複該步驟(b)直到載板P1及P2所需的晶粒D移轉完成。The method for removing the die of the present invention, the steps of which include: (a) providing a wafer W composed of a plurality of die D after dicing, and each of the plurality of die D has a magnetic attraction; ( b) using two die-removing chucks T1 and T2 of the present invention, and using the plurality of magnetic suction heads H to remove a portion of the plurality of dies D to the carrier plates P1 and P2 with magnetic attraction, and the The magnetic attraction force of the carriers P1 and P2 > the magnetic attraction force of the plurality of magnetic suction heads H > the magnetic attraction force of each of the plurality of crystal grains D, so that the plurality of crystal grains D in this part can be controlled by the plurality of magnetic suction heads H transfer onto the carriers P1 and P2; and (c) repeat the step (b) until the transfer of the dies D required by the carriers P1 and P2 is completed.

該步驟(b)及(c)之中,該晶粒移取吸盤T1及T2係依序重複移動至該晶圓W以完成移取晶粒D。如圖4及7所示,該晶粒移取吸盤T1移動至該晶圓W以移取欲移動的晶粒D,同時,該晶粒移取吸盤T2會位於該載板P2之上方;接著,如圖5及8所示,該晶粒移取吸盤T1將欲移動的晶粒D放至該載板P1的晶粒放置區塊P11,同時,該晶粒移取吸盤T2會移動至該晶圓W以移取欲移動的晶粒D;接著,如圖6及9所示,該晶粒移取吸盤T2將欲移動的晶粒D放至該載板P2的晶粒放置區塊P21,同時,該晶粒移取吸盤T1會移動至該晶圓W以移取欲移動的晶粒D;最後,此過程會重複至該載板P1及P2的六個晶粒放置區塊P11至P16及P21至P26都佈滿晶粒D。In the steps (b) and (c), the die removal chucks T1 and T2 are repeatedly moved to the wafer W in sequence to complete the removal of the die D. As shown in FIGS. 4 and 7 , the die removal chuck T1 moves to the wafer W to remove the die D to be moved, and at the same time, the die removal chuck T2 is positioned above the carrier P2; then 5 and 8 , the die removal chuck T1 places the die D to be moved to the die placement block P11 of the carrier P1, and at the same time, the die removal chuck T2 moves to the die placement block P11 of the carrier P1. The wafer W is used to remove the die D to be moved; then, as shown in FIGS. 6 and 9 , the die removal chuck T2 places the die D to be moved to the die placement block P21 of the carrier P2 , at the same time, the die removal chuck T1 will move to the wafer W to remove the die D to be moved; finally, this process will be repeated to the six die placement blocks P11 to P2 of the carriers P1 and P2 P16 and P21 to P26 are all covered with die D.

該載板P1及P2的磁性吸引力 > 複數個磁性吸頭H的磁性吸引力> 該複數個晶粒D之磁性吸引力的大小排序,能有效提升移取晶粒D的穩定性,使晶粒D在移取過程中不會脫落。具體而言,在該複數個晶粒D尚未移轉時,由於該複數個晶粒D的磁性吸引力較弱,晶粒D彼此不會互相排斥及吸引,在切割後的晶圓W內可穩定停留、不會移動。當該複數個磁性吸頭H的接近該複數個晶粒D時,由於該複數個磁性吸頭H的磁性吸引力相對於複數個晶粒D的磁性吸引力較大,因此該複數個磁性吸頭H可移取所欲移取的晶粒D後開始移轉。隨後,該複數個磁性吸頭H移動接近至載板P1及P2時,由於該載板P1及P2具有相對於該複數個磁性吸頭H較大的磁性吸引力,因此該複數個晶粒D會被磁性吸引力吸引至該載板P1及P2並固定。The magnetic attractive forces of the carriers P1 and P2 > the magnetic attractive forces of the plurality of magnetic suction heads H > the order of the magnetic attractive forces of the plurality of crystal grains D, which can effectively improve the stability of removing the crystal grains D, so that the crystal grains D can be removed. Particle D does not fall off during pipetting. Specifically, when the plurality of dies D have not been transferred, since the magnetic attraction of the plurality of dies D is weak, the dies D will not repel and attract each other. Stays stably and doesn't move. When the plurality of magnetic suction heads H are close to the plurality of crystal grains D, since the magnetic attractive force of the plurality of magnetic suction heads H is larger than the magnetic attractive force of the plurality of crystal grains D, the plurality of magnetic suction heads H The head H can start the transfer after removing the desired die D. Subsequently, when the plurality of magnetic suction heads H move close to the carrier plates P1 and P2, since the carrier plates P1 and P2 have a larger magnetic attraction force relative to the plurality of magnetic suction heads H, the plurality of crystal grains D will be attracted to the carriers P1 and P2 by magnetic attraction and fixed.

該載板P1及P2的磁性吸引力係由一承載平台所提供,該載板P1及P2係置於該承載平台上進行晶粒D取;該承載平台的磁性吸引力為永久磁鐵,其磁性吸引力大小是該磁性吸頭H的5~10倍,可將移取至該載板P1及P2上的晶粒牢固地吸引住。The magnetic attraction force of the carrier boards P1 and P2 is provided by a carrier platform, and the carrier boards P1 and P2 are placed on the carrier platform for chip D extraction; the magnetic attraction force of the carrier platform is a permanent magnet, and its magnetic The size of the attractive force is 5-10 times that of the magnetic suction head H, which can firmly attract the chips transferred to the carriers P1 and P2.

本發明之晶粒移取之方法係在該晶圓W經切割後直接移取該複數個晶粒D,例如當該晶圓W在切割後,該複數個晶粒D之間的切割線為0.025 mm,即該複數個晶粒D之間的間距則為0.025mm,切割後即可直接進行晶粒移取。習知技術一般會在晶圓切割後使用拉伸膜進行拉伸,放大晶粒之間的間距後才進行移轉,然而,本發明之方法並無須使用拉伸膜調整複數個晶粒D的間距,因此不會發生習知技術中晶粒因拉伸後而間距不等,導致移取晶粒時不易對位及對位錯誤的問題。The method for removing the die of the present invention is to directly remove the plurality of die D after the wafer W is cut. For example, after the wafer W is cut, the cutting line between the plurality of die D is 0.025 mm, that is, the distance between the plurality of grains D is 0.025 mm, and the grains can be removed directly after cutting. In the prior art, a stretch film is generally used to stretch the wafer after dicing, and the distance between the die is enlarged before transferring. Therefore, in the prior art, there will be no problems of uneven spacing between the crystal grains after being stretched, resulting in difficult alignment and misalignment when removing the crystal grains.

本發明之晶粒移取之方法可用於製備RGB顯示面板,具體例如圖10所示;如圖10(a)所示,載板P1及P2移動到紅色晶圓RW的兩側時,紅色晶粒移取吸盤RT1及RT2分別會將複數個紅色晶粒RD移取至該載板P1及P2;接著,如圖10(b)所示,該載板P1及P2移動到綠色晶圓GW的兩側,綠色晶粒移取吸盤GT1及GT2分別會將複數個綠色晶粒GD移取至該載板P1及P2,該複數個綠色晶粒GD會同佈排列至該排列於複數個紅色晶粒RD的相同側邊;接著,如圖10(c)所示,該載板P1及P2移動到藍色晶圓BW的兩側,藍色晶粒移取吸盤BT1及BT2分別會將複數個藍色晶粒BD移取至該載板P1及P2,該複數個藍色晶粒BD會同佈排列至該排列於複數個綠色晶粒GD的相同側邊;此過程會重複至該載板P1及P2的所有晶粒放置區塊佈滿該紅色晶粒RD、該綠色晶粒GD及該藍色晶粒BD。圖10所示之紅色晶圓RW、藍色晶圓BW的及綠色晶圓GW的晶粒及載板P1及P2係為簡化示例圖,其複數個晶粒(RD、GD、BD)的數量及載板P1及P2的尺寸大小可視需要而調整之。The die removal method of the present invention can be used to prepare an RGB display panel, as shown in FIG. 10 ; as shown in FIG. 10( a ), when the carriers P1 and P2 are moved to both sides of the red wafer RW, the red die Die removal chucks RT1 and RT2 will respectively remove a plurality of red dies RD to the carriers P1 and P2; then, as shown in FIG. 10(b), the carriers P1 and P2 move to the green wafer GW On both sides, the green die removal suction cups GT1 and GT2 will respectively remove a plurality of green die GD to the carrier P1 and P2, and the plurality of green die GD will be arranged in the same arrangement on the plurality of red die. The same side of RD; then, as shown in Figure 10(c), the carriers P1 and P2 are moved to the two sides of the blue wafer BW, and the blue die removal suction cups BT1 and BT2 will respectively remove a plurality of blue wafers. The color dies BD are transferred to the carriers P1 and P2, and the plurality of blue dies BD will be arranged on the same side of the plurality of green dies GD; this process will be repeated to the carriers P1 and P2. All die placement blocks of P2 are covered with the red die RD, the green die GD and the blue die BD. The dies and carriers P1 and P2 of the red wafer RW, the blue wafer BW, and the green wafer GW shown in FIG. 10 are simplified example diagrams, and the number of the plurality of dies (RD, GD, BD) is shown in FIG. And the size of the carrier boards P1 and P2 can be adjusted as needed.

綜上所述,本發明之晶粒移取吸盤具有複數個磁性吸頭,其中具有磁性吸引力的部份吸頭為等間距的陣列排序或直線排序,可將複數顆晶粒移取至載板並完成排列,提高移取晶粒的效率及精準度。另外,該複數個磁性吸頭係使用光蝕刻所完成,尺寸微小,欲移取之晶粒大小的40%至85%,因此能夠有效對位並降低移動時的對位錯誤(error),適於移取MicroLED晶粒。又,明之晶粒移取之方法可使用多個晶粒移取吸盤同步將晶粒移取至多個載板上,提高製程效率。另外,藉由該載板的磁性吸引力 > 複數個磁性吸頭的磁性吸引力> 各該複數個晶粒的磁性吸引力之磁性吸引力排序,能有效提升移取晶粒的穩定性,使晶粒在移取過程中不會脫落。To sum up, the chip removal chuck of the present invention has a plurality of magnetic suction heads, and some of the suction heads with magnetic attraction are arranged in an array or linear order with equal spacing, which can transfer a plurality of chips to the carrier. Plate and complete the arrangement, improve the efficiency and accuracy of removing the die. In addition, the plurality of magnetic tips are completed by photo-etching, and the size is small, which is 40% to 85% of the size of the grains to be removed, so it can effectively align and reduce the alignment error during movement. To remove the MicroLED die. In addition, Mingzhi's die-transfer method can use a plurality of die-transfer chucks to simultaneously transfer dies to a plurality of carriers, thereby improving the process efficiency. In addition, by the magnetic attraction of the carrier > the magnetic attraction of the plurality of magnetic heads > the magnetic attraction of the magnetic attraction of the plurality of crystal grains, the stability of removing the crystal grains can be effectively improved, so that the The grains do not fall off during the removal process.

本發明之晶粒移取吸盤及晶粒移取之方法可應用在晶粒巨量移轉,特別係Micro-LED,具有產業利用性。The die transfer suction cup and the die transfer method of the present invention can be applied to the mass transfer of die, especially Micro-LED, which has industrial applicability.

以上已將本發明做一詳細說明,惟以上所述者,僅惟本發明之一較佳實施例而已,當不能以此限定本發明實施之範圍,即凡依本發明申請專利範圍所作之均等變化與修飾,皆應仍屬本發明之專利涵蓋範圍內。The present invention has been described in detail above, but what has been described above is only a preferred embodiment of the present invention, and should not limit the scope of implementation of the present invention, that is, all claims made according to the scope of the patent application of the present invention are equal Changes and modifications should still fall within the scope of the patent of the present invention.

T 晶粒移取吸盤 S 基板 H 磁性吸頭 H’ 無磁性吸頭 F 對位標誌 C 攝像單元 W 晶圓 F’ 對位件 D 晶粒 T1 晶粒移取吸盤 T2 晶粒移取吸盤 P1 載板 P11 晶粒放置區塊 P12 晶粒放置區塊 P13 晶粒放置區塊 P14 晶粒放置區塊 P15 晶粒放置區塊 P16 晶粒放置區塊 P2 載板 P21 晶粒放置區塊 P22 晶粒放置區塊 P23 晶粒放置區塊 P24 晶粒放置區塊 P25 晶粒放置區塊 P26 晶粒放置區塊 RW 紅色晶圓R RD 紅色晶粒 RT1 紅色晶粒移取吸盤 RT2 紅色晶粒移取吸盤 GW 綠色晶圓 GD 綠色晶粒 GT1 綠色晶粒移取吸盤 GT2 綠色晶粒移取吸盤 BW 藍色晶圓 BD 藍色晶粒 BT1 藍色晶粒移取吸盤 BT2 藍色晶粒移取吸盤 T Die removal chuck S substrate H Magnetic Tip H’ non-magnetic tip F registration mark C camera unit W wafer F’ alignment piece D die T1 Die Pickup Chuck T2 Die Pickup Chuck P1 carrier board P11 Die Placement Block P12 Die Placement Block P13 Die Placement Block P14 Die Placement Block P15 Die Placement Block P16 Die Placement Block P2 carrier board P21 Die Placement Block P22 Die Placement Block P23 Die Placement Block P24 Die Placement Block P25 Die Placement Block P26 Die Placement Block RW Red Wafer R RD red grain RT1 Red Die Pickup Suction Cup RT2 Red Die Pickup Suction Cup GW Green Wafer GD Green Die GT1 Green Die Pickup Suction Cup GT2 Green Die Pickup Suction Cup BW Blue Wafer BD blue grain BT1 Blue Die Pickup Suction Cup BT2 blue die transfer suction cup

圖1為本發明之晶粒移取吸盤的仰視圖。FIG. 1 is a bottom view of the die removing chuck of the present invention.

圖2為本發明之晶粒移取吸盤的側視圖。FIG. 2 is a side view of the die removal chuck of the present invention.

圖3為本發明之切割後的晶圓的示意圖。FIG. 3 is a schematic diagram of a diced wafer of the present invention.

圖4係本發明之晶粒移取之方法的側視圖(一)。FIG. 4 is a side view (1) of the method for removing crystal grains of the present invention.

圖5係本發明之晶粒移取之方法的側視圖(二)。FIG. 5 is a side view (2) of the method for removing crystal grains of the present invention.

圖6係本發明之晶粒移取之方法的側視圖(三) 。FIG. 6 is a side view (3) of the method for removing crystal grains of the present invention.

圖7係本發明之晶粒移取之方法的俯視圖(一) 。FIG. 7 is a top view (1) of the method for removing crystal grains of the present invention.

圖8係本發明之晶粒移取之方法的俯視圖(二)。FIG. 8 is a top view (2) of the method for removing crystal grains of the present invention.

圖9係本發明之晶粒移取之方法的俯視圖(三)。FIG. 9 is a top view (3) of the method for removing crystal grains of the present invention.

圖10本發明之晶粒移取之方法用於製備RGB顯示面板的示意圖。FIG. 10 is a schematic diagram of the method for chip removal of the present invention for preparing an RGB display panel.

T 晶粒移取吸盤 S 基板 H 磁性吸頭 F 對位標誌 T Die removal chuck S substrate H Magnetic Tip F registration mark

Claims (11)

一種晶粒移取吸盤,其包含: 一基板; 複數個磁性吸頭,設置於該基板之一側面;其中,每一該磁性吸頭的之面積大小為欲移取之晶粒面積大小的40%至85%。 A grain removal suction cup, comprising: a substrate; A plurality of magnetic suction heads are arranged on one side of the substrate; wherein, the area size of each of the magnetic suction heads is 40% to 85% of the area size of the chip to be removed. 如請求項1所述之晶粒移取吸盤,其中該複數個磁性吸頭係呈直線排列或陣列排序。The die removal chuck according to claim 1, wherein the plurality of magnetic suction heads are arranged in a line or in an array. 如請求項1所述之晶粒移取吸盤,其中移取晶粒時,該複數個磁性吸頭係部份磁性吸頭具有磁性吸引力,且該部份磁性吸頭彼此之間具有相當的距離。The die-removing chuck according to claim 1, wherein when removing the die, some of the plurality of magnetic suction heads are magnetically attractive, and the part of the magnetic suction heads have a comparable magnetic force to each other. distance. 如請求項1所述之晶粒移取吸盤,其中該基板上設有對位標誌(alignment mark)。The die removal chuck as claimed in claim 1, wherein the substrate is provided with an alignment mark. 如請求項1所述之晶粒移取吸盤,其中該基板為透明基板。The die removal chuck according to claim 1, wherein the substrate is a transparent substrate. 如請求項4所述之晶粒移取吸盤,更包含一攝像單元,設置在該基板的上方可用於吸盤及晶圓之對位。The die removing suction cup as claimed in claim 4 further includes a camera unit, which is arranged above the substrate and can be used for alignment of the suction cup and the wafer. 如請求項1至5任一項所述之晶粒移取吸盤,其中該複數個磁性吸頭係藉由光蝕刻所形成。The die removal chuck according to any one of claims 1 to 5, wherein the plurality of magnetic suction heads are formed by photo-etching. 一種晶粒移取之方法,其步驟包含: (a)  提供至少一個經切割後形成複數個晶粒所組成之晶圓,且各該複數個晶粒均具有磁性吸引力; (b) 使用至少一如請求項1至7任一項所述之晶粒移取吸盤,藉由該複數個磁性吸頭移取部份之複數個晶粒至至少一具有磁性吸引力的載板,且該載板的磁性吸引力 > 複數個磁性吸頭的磁性吸引力> 各該複數個晶粒的磁性吸引力,使該部份之複數個晶粒可由複數個磁性吸頭移轉至該載板上;及 (c)   重複該步驟(b)直到載板所需的晶粒移轉完成。 A method for removing grains, the steps comprising: (a) providing at least one wafer that is cut to form a plurality of dies, and each of the plurality of dies has magnetic attraction; (b) using at least one of the die removal chucks as described in any one of claims 1 to 7, and using the plurality of magnetic suction heads to remove a portion of the plurality of dies to at least one carrier with magnetic attraction board, and the magnetic attraction force of the carrier plate > the magnetic attraction force of the plurality of magnetic suction heads > the magnetic attraction force of each of the plurality of crystal grains, so that the plurality of crystal grains in this part can be transferred by the plurality of magnetic suction heads to the the carrier; and (c) Repeat step (b) until the desired die transfer for the carrier is completed. 如請求項8所述之方法, 其中該步驟(a)之晶圓為至少三個,且該三個晶圓之顏色相異。The method of claim 8, wherein the number of wafers in step (a) is at least three, and the colors of the three wafers are different. 如請求項8所述之方法,其中該步驟(b)中,對應每一該晶圓使用兩個晶粒移取吸盤,該兩個晶粒移取吸盤將複數個晶粒移轉至設於晶圓相對應兩側之載板。The method of claim 8, wherein in the step (b), two die removal chucks are used for each of the wafers, and the two die removal chucks transfer a plurality of dies to The wafers correspond to the carriers on both sides. 如請求項8所述之方法,其中該晶圓具有至少一對位標誌。The method of claim 8, wherein the wafer has at least one pair of alignment marks.
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI639672B (en) * 2013-04-09 2018-11-01 日東電工股份有限公司 Binder for manufacturing a semiconductor device, dicing tape integrated type back sheet, semiconductor device, and method of manufacturing the same
TWI715514B (en) * 2020-08-14 2021-01-01 晶云科技股份有限公司 Apparatus for transferring microdevice and method for transferring microdevice

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI639672B (en) * 2013-04-09 2018-11-01 日東電工股份有限公司 Binder for manufacturing a semiconductor device, dicing tape integrated type back sheet, semiconductor device, and method of manufacturing the same
TWI715514B (en) * 2020-08-14 2021-01-01 晶云科技股份有限公司 Apparatus for transferring microdevice and method for transferring microdevice

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