WO2014171584A1 - Vacuum chuck for semiconductor production equipment used for flatness maintenance and chipping prevention - Google Patents

Vacuum chuck for semiconductor production equipment used for flatness maintenance and chipping prevention Download PDF

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Publication number
WO2014171584A1
WO2014171584A1 PCT/KR2013/005321 KR2013005321W WO2014171584A1 WO 2014171584 A1 WO2014171584 A1 WO 2014171584A1 KR 2013005321 W KR2013005321 W KR 2013005321W WO 2014171584 A1 WO2014171584 A1 WO 2014171584A1
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WO
WIPO (PCT)
Prior art keywords
wafer
vacuum
pin
vacuum chuck
support pin
Prior art date
Application number
PCT/KR2013/005321
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French (fr)
Korean (ko)
Inventor
정재극
허찬
Original Assignee
(주)월덱스
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Publication of WO2014171584A1 publication Critical patent/WO2014171584A1/en

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23Q—DETAILS, COMPONENTS, OR ACCESSORIES FOR MACHINE TOOLS, e.g. ARRANGEMENTS FOR COPYING OR CONTROLLING; MACHINE TOOLS IN GENERAL CHARACTERISED BY THE CONSTRUCTION OF PARTICULAR DETAILS OR COMPONENTS; COMBINATIONS OR ASSOCIATIONS OF METAL-WORKING MACHINES, NOT DIRECTED TO A PARTICULAR RESULT
    • B23Q3/00—Devices holding, supporting, or positioning work or tools, of a kind normally removable from the machine
    • B23Q3/02—Devices holding, supporting, or positioning work or tools, of a kind normally removable from the machine for mounting on a work-table, tool-slide, or analogous part
    • B23Q3/06—Work-clamping means
    • B23Q3/08—Work-clamping means other than mechanically-actuated
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/6875—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices

Definitions

  • the present invention relates to a vacuum chuck of a semiconductor manufacturing equipment, and more particularly, to support a wafer to configure a support pin and a ring support pin to maintain the flatness, round the corners of the support pin and the ring support pin
  • the present invention relates to a vacuum chuck for semiconductor manufacturing equipment that is easy to maintain flatness and prevent chipping by minimizing scratches and chipping by minimizing the contact portion when the wafer is seated while maintaining the flatness of the wafer.
  • semiconductor integrated circuits are as small and thin silicon chips as nails, but they contain tens of millions of electronic components (transistors, diodes, and resistors). Numerous manufacturing processes are involved, including processes, deposition processes, and heat treatment processes.
  • Silicon rods which are silicon single crystals, are cut to a thickness of several hundred [mu] m and one side thereof is polished like a mirror to form a silicon wafer.
  • An integrated circuit of a semiconductor is formed on a silicon wafer.
  • Mechanical chucks, electrostatic chucks and vacuum chucks are used for chucks used to hold or transport wafers during semiconductor manufacturing processes.
  • Mechanical chucks are clamped with arms or clamps to press the wafer against its support surface, and electrostatic chucks generate a voltage difference between the wafer and the metal electrode or pair of electrodes and are configured to separate the wafer and electrode by a dielectric layer.
  • the vacuum chuck is configured to stably suck the wafer using the pressure of the vacuum. Dust, foreign matter or particles generated during the semiconductor chip manufacturing process contaminate the seating surface of the vacuum chuck on which the wafer is placed. If the seating surface of the vacuum chuck is contaminated and the wafer is seated on the seating surface of the vacuum chuck, it causes defocusing and causes a huge loss in semiconductor production.
  • a vacuum chuck in a semiconductor manufacturing facility comprising: a spin head having an upper surface on which a substrate is seated and frictional resistance portions disposed in a direction not parallel to the circumferential direction on the upper surface, the spin head A spindle fixedly coupled to a lower surface of the substrate, and a driver for rotating the spindle, wherein the frictional resistance portions include linear vacuum grooves for vacuum suction of the bottom surface of the substrate, and the vacuum grooves are perpendicular to the rotational direction on the bottom surface of the substrate. It relates to a vacuum chuck of the semiconductor manufacturing equipment to be formed radially with respect to the rotation center so that the friction area is generated in the direction.
  • a vacuum chuck fixed to a stage of a semiconductor manufacturing facility to fix a wafer using a suction force of a vacuum the chuck body having a predetermined thickness and formed in a wafer-like shape, and the wafer
  • the conventional technology described above has a wide spacing of the pins for supporting the wafer, and thus, when the wafer is adsorbed by vacuum, the wafer is not formed and the wafer sag occurs. There is a problem that the productivity is lowered by not being.
  • the wafer holding pins supporting the wafer are formed in a plurality of densely and prevent the wafer from sagging. There is a problem that can be damaged or chipping phenomenon.
  • the above-described technology uses a vacuum chuck of a semiconductor manufacturing facility made only of a wafer holding pin for supporting a wafer, so that the wafer is in small contact with the wafer processing pin for supporting the wafer. There is a problem that can not proceed because the process is not caught.
  • the present invention has been made to solve the above problems of the prior art,
  • It is composed of any one material of silicon, alumina, sapphire, quartz, metal, resin, and comprises a plurality of support pins on the upper side of the main body and a ring support pin configured smaller than the diameter of the main body between the support pins.
  • the wafer can be prevented from sagging downward while the wafer is settled, so that the wafer can be kept flat and the vacuum pin can be partitioned and seated by using the support pin and the ring support pin. It is possible to settle wafers with severe warpage, and to provide products that minimize the damage and damage during the process by minimizing the contact surface with the wafer by forming the upper surface of the support pin and the ring support pin round. It was created as a technical task.
  • the present invention provides a main body 110 formed in a shape similar to the wafer w, a plurality of support pins 111 supporting the lower portion of the wafer w above the main body 110, and the support.
  • the vacuum chuck for semiconductor manufacturing equipment consisting of a separation pin moving hole 115 formed to penetrate the body portion 110 so that the separation pin 210 separating the wafer (w) seated on the upper surface
  • the support pin Between the 111, the ring support pin 112 is formed at the same height as the support pin 111 with a diameter smaller than the body portion 110, the support pin 111 and the ring support pin 112 is
  • the side cross section is It is configured in the shape of '”is configured to minimize the damage when the wafer (w) is seated, the vacuum hole 114 is located in each of the ring support pin 112 is configured to
  • a support pin and a ring support pin for simultaneously supporting a wafer on the upper side of the vacuum chuck can be used at the same time.
  • the flatness of the wafer can be maintained to maximize productivity, and the upper surfaces of the support pins and the ring support pins are rounded to minimize damage to the wafer by minimizing contact with the wafer.
  • it is a useful invention that allows wafers to be seated by dividing the vacuum zone to allow the wafers to be severely bent.
  • 1 is a use state diagram showing a use state of a conventional vacuum chuck
  • FIG. 2 is a plan view showing a preferred embodiment of the present invention
  • Figure 3 is a side view showing a preferred embodiment of the present invention
  • FIG. 5 is a view showing a separation pin moving hole of a preferred embodiment of the present invention
  • FIG. 6 is a view showing a state fixed to the stage of the semiconductor manufacturing equipment of a preferred embodiment of the present invention
  • the vacuum chuck is configured to support a plurality of protruding pins to serve to support the wafer (w) as shown in Figure 1, but in the prior art is composed of a plurality of pins but a wide interval As a result, the wafer w sags to occur, and thus flatness cannot be maintained. In addition, although the flatness could be maintained by forming the pin spacing tightly, the contact portion of the pin was sharp, resulting in scratching and pitching of the wafer w.
  • the support pin 111 and the ring support pin 112 are configured to support the wafer w and maintain the flatness, and the edges of the support pin 111 and the ring support pin 112 are formed.
  • the vacuum chuck for semiconductor manufacturing equipment which is easy to prevent chipping and flatness to minimize scratches and chipping by minimizing the contact part when the wafer w is seated while maintaining the flatness of the wafer w by rounding processing to provide.
  • the configuration thereof includes a main body 110 formed in a shape similar to a wafer w, and the wafer above the main body 110.
  • the ring support pin 112 between the support pins 111 and the same height as the support pins 111 with a diameter smaller than the body portion 110.
  • the support pin 111 and the ring support pin 112 side end surface It is configured in the shape of '”is configured to minimize the damage when the wafer (w) is seated, the vacuum hole 114 is located in each ring support pin 112 is configured to be seated by zones. .
  • the vacuum chuck 100 serves as a jig for supporting the wafer w in order to accurately project the circuit line width onto the wafer w, and the wafer w is generally managed in 0.2 ⁇ m units.
  • the silicon wafer (w) has a warpage phenomenon itself, and serves to compensate for this warpage phenomenon, that is, to position the wafer (w) at the correct point, using a vacuum to press the wafer (w) appropriate pressure By pulling to serve to straighten the bent state of the wafer (w).
  • the main body 110 is a support pin 111 is composed of a plurality of support pins 111 protruding upward as shown in FIG. As you can see, the side As the wafer w is seated and adsorbed, it is in contact with the edge portion, and scratches and damage are increased, resulting in deterioration of defect rate and productivity.
  • the support pin 111 of the present invention is a side cross-section " It is possible to reduce scratches and damages by minimizing the portion that is in contact with the wafer (w) seated on the upper portion of the shape.
  • the ring support pins 112 having the same height as the support pins 111 are formed inside the main body 110 between the support pins 111.
  • the ring support pin 112 is formed as shown in FIG. 2 to simultaneously support the wafer w together with the support pin 111 during vacuum adsorption, thereby preventing sag and maintaining flatness. Will be.
  • the support pin 111 and the ring support pin 112 has a side end surface " '' Formed to shape the wafer (w) is settled to minimize the surface contact with the wafer (w) when adsorbed by the vacuum force to reduce the scratch and damage of the wafer (w) to improve the quality of the product economic efficiency And work efficiency is improved.
  • the support pins 111 and the ring support pins 112 of a fine size are rounded to solve the conventional problems.
  • the vacuum region 113 which is a space in which no material exists, is automatically formed therebetween.
  • the suction hole 220 is vacuum adsorbed, except for a portion where the wafer w contacts the support pin 111 and the ring support pin 112. The other part will bend downward.
  • a plurality of vacuum holes 114 penetrating through the main body 110 are configured to be connected to the suction hole 220 configured in the stage 200 to the upper portion of the main body 110. It is to be able to vacuum-absorb the configured wafer (w).
  • the vacuum holes 114 are mainly configured to be arranged in a diagonal direction of the main body part 110, but may be arranged and used to form a circle around the vacuum chuck 100 as necessary.
  • Separation pin moving hole 115 is configured to penetrate the body portion 110 to the same size or a little larger than the pin 210. Due to the separation pin moving hole 115, when the stage 200 is coupled with the stage 200, the wafer w mounted on the upper portion of the main body 110 may be easily separated, and the separation pin moving hole 115 may be seen. Although shown in the invention is composed of three, if necessary to elaborate work if necessary may be composed of a plurality.
  • the material of the vacuum chuck 100 may be made of any one material of silicon, alumina, sapphire, quartz, metal, resin, ceramic material, or may be used in semiconductor manufacturing equipment, semiconductor photo process, It can be used in all processes such as inspection process and processing process.
  • the region of the vacuum chuck 100 is divided into at least one, the vacuum hole 114 may be configured separately, the support pin 114 is configured in the range of the ring support pin 112 is circular, It can be arranged in a triangular, square shape that can be selectively formed in configuring the vacuum chuck (100).
  • the vacuum chuck 100 is coupled to the stage 200, and then the wafer w is seated on the plurality of support pins 111 and the ring support pins 112. After this, if vacuum suction is performed by transferring a vacuum force through the suction hole 220, the portion of the wafer w except for the portion in which the wafer w is in contact with the support pin 111 and the ring support pin 112 is located in the vacuum region 113. It will be slightly bent to be able to maintain the flatness of the wafer (w) as shown in FIG.
  • the wafer w is separated from the vacuum chuck 100 by the separating pin 115 that is connected to the separating pin moving hole 210.
  • the separation pin 115 may separate the wafer w using a separate moving means.
  • the support pin 111 and the ring support pin 112 for supporting the wafer (w) above the vacuum chuck 100 is Since the support pin 111 and the ring support pin 112 can be used at the same time, the flatness of the wafer w can be maintained, thereby maximizing productivity, as well as the support pin 111.
  • the upper surface of the ring support pin 112 is rounded to minimize damage by minimizing the contact surface with the wafer w, as well as dividing the vacuum area to allow the wafer (w) to be seated, thereby causing severe bending. Wafer is also a useful invention that can be seated.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

The present invention relates to a vacuum chuck for semiconductor production equipment used for flatness maintenance and chipping prevention, and more specifically concerns a vacuum chuck for semiconductor production equipment, the chuck comprising: a main-body part (110) formed in a shape resembling a wafer (w); a plurality of supporting pins (111) for supporting the lower part of the wafer (w) above the main-body part (110); vacuum regions (113) formed by means of the supporting pins (111); vacuum holes (114) formed passing through to the main-body part (110) such that the vacuum pressure is transmitted to the vacuum regions (113); and separating-pin moving holes (115) formed passing through to the main-body part (110) so as to allow movement of separating pins (210) for separation of the wafer (w) placed on the upper surfaces of the supporting pins (111). In the vacuum chuck: ring supporting pins (112) are constituted to have the same height as the supporting pins (111), with a smaller diameter than the main-body part (110); and the supporting pins (111) and the ring supporting pins (112) are constituted in such a way as to minimise damage when the wafer (w) is placed thereon, and are constituted in such a way as to allow placement in separate areas with the vacuum holes (114) positioned on the respective ring supporting pins (112).

Description

평탄도 유지와 치핑방지에 용이한 반도체 제조설비용 진공 척Vacuum chuck for semiconductor manufacturing equipment to maintain flatness and prevent chipping
본 발명은 반도체 제조설비의 진공 척에 관한 것으로, 보다 상세하게는 웨이퍼를 지지하여 평탄도를 유지할 수 있도록 지지핀과 링지지핀을 구성하되, 상기 지지핀과 링지지핀의 모서리부분을 라운드지게 구성하여 웨이퍼의 평탄도를 유지함과 동시에 웨이퍼가 안착 시 접촉되는 부분을 최소화 하여 스크래치 및 치핑을 최소화 할 수 있는 평탄도 유지와 치핑방지에 용이한 반도체 제조설비용 진공 척에 관한 것이다.The present invention relates to a vacuum chuck of a semiconductor manufacturing equipment, and more particularly, to support a wafer to configure a support pin and a ring support pin to maintain the flatness, round the corners of the support pin and the ring support pin The present invention relates to a vacuum chuck for semiconductor manufacturing equipment that is easy to maintain flatness and prevent chipping by minimizing scratches and chipping by minimizing the contact portion when the wafer is seated while maintaining the flatness of the wafer.
통상적으로 반도체 집적회로는 손톱만큼이나 작고 얇은 실리콘 칩에 지나지 않지만 그 안에는 수 천만개 이상의 전자부품들(트랜지스터, 다이오드, 저항)이 구성된 장치로서, 이 반도체 집적회로는 최종 완성에 이르기까지에는 사진공정, 식각 공정, 증착 공정, 열처리 공정을 비롯한 수많은 제조 공정이 수반된다.Typically, semiconductor integrated circuits are as small and thin silicon chips as nails, but they contain tens of millions of electronic components (transistors, diodes, and resistors). Numerous manufacturing processes are involved, including processes, deposition processes, and heat treatment processes.
실리콘 단결정인 규소봉은 수백 ㎛의 두께로 절단되어 그 한쪽 면이 거울같이 연마되어 실리콘 웨이퍼로 형성되는데, 반도체의 집적회로는 실리콘 웨이퍼에 형성된다. 반도체 제조 공정 중에 웨이퍼를 고정시키거나 이송시키기 위하여 사용되는 척에는 기계식 척과 정전기 척과 진공 척이 사용된다.Silicon rods, which are silicon single crystals, are cut to a thickness of several hundred [mu] m and one side thereof is polished like a mirror to form a silicon wafer. An integrated circuit of a semiconductor is formed on a silicon wafer. Mechanical chucks, electrostatic chucks and vacuum chucks are used for chucks used to hold or transport wafers during semiconductor manufacturing processes.
기계식 척은 그 지지표면에 대해 웨이퍼를 누르기 위해서 아암 또는 클램프를 갖고 있는 클램프 방식이 있고, 정전기 척은 웨이퍼와 금속 전극 또는 전극 쌍 간에 전압차를 발생시키고 웨이퍼와 전극이 유전 층에 의해 분리되도록 구성되며, 진공 척은 진공의 압력을 이용하여 웨이퍼를 안정적으로 흡착시키도록 구성된다. 반도체 칩 제조공정 중에 발생되는 먼지, 이물질 혹은 파티클(particle)은 웨이퍼가 안착되는 진공 척의 안착 면을 오염시킨다. 진공 척의 안착 면이 오염된 상태로, 진공 척의 안착 면에 웨이퍼가 안착 될 경우, 디 포커스의 원인이 되어 반도체 생산에 막대한 손실을 초래한다.Mechanical chucks are clamped with arms or clamps to press the wafer against its support surface, and electrostatic chucks generate a voltage difference between the wafer and the metal electrode or pair of electrodes and are configured to separate the wafer and electrode by a dielectric layer. The vacuum chuck is configured to stably suck the wafer using the pressure of the vacuum. Dust, foreign matter or particles generated during the semiconductor chip manufacturing process contaminate the seating surface of the vacuum chuck on which the wafer is placed. If the seating surface of the vacuum chuck is contaminated and the wafer is seated on the seating surface of the vacuum chuck, it causes defocusing and causes a huge loss in semiconductor production.
우선 종래의 기술들을 살펴보면,Looking at the prior art first,
등록번호 10-1049444 (특)반도체 제조 설비의 진공 척에 있어서, 기판이 안착되는 상부 면과, 상기 상부 면에 원주 방향과 평행하지 않은 방향으로 배치되는 마찰 저항부들을 갖는 스핀 헤드, 상기 스핀헤드의 하부 면에 고정 결합되는 스핀들, 상기 스핀들을 회전시키는 구동기를 포함하되, 상기 마찰 저항부들은 기판의 저면을 진공 흡착하는 직선의 진공 홈들을 포함하며, 상기 진공 홈들은 기판 저면에 회전방향과 직교하는 방향으로 마찰 면적이 발생되도록 회전 중심을 기준으로 방사상으로 형성되는 것 반도체 제조 설비의 진공 척에 관한 것이다.10-1049444 A vacuum chuck in a semiconductor manufacturing facility, comprising: a spin head having an upper surface on which a substrate is seated and frictional resistance portions disposed in a direction not parallel to the circumferential direction on the upper surface, the spin head A spindle fixedly coupled to a lower surface of the substrate, and a driver for rotating the spindle, wherein the frictional resistance portions include linear vacuum grooves for vacuum suction of the bottom surface of the substrate, and the vacuum grooves are perpendicular to the rotational direction on the bottom surface of the substrate. It relates to a vacuum chuck of the semiconductor manufacturing equipment to be formed radially with respect to the rotation center so that the friction area is generated in the direction.
등록번호 10-0545670 (특) 진공의 흡입력을 이용하여 웨이퍼를 고정시키도록 반도체 제조설비의 스테이지에 고정되는 진공 척에 있어서, 소정의 두께를 갖으며 웨이퍼와 유사한 형상으로 형성된 척 몸체와, 상기 웨이퍼의 배면을 지지하도록 척 몸체의 상면에 형성된 다수개의 웨이퍼 고정용 팁과, 상기 웨이퍼 고정용 팁에 의해서 형성된 상부 진공영역의 둘레 면을 차단하도록 척 몸체의 상면 둘레에 형성된 상부 외벽과, 상기 척 몸체가 반도체 제조설비의 스테이지에 고정되도록 척 몸체의 저면에 형성된 다수개의 척 고정용 팁과, 상기 척 고정용 팁에 의해서 형성된 하부 진공영역의 둘레 면을 차단하도록 척 몸체의 저면 둘레에 형성된 하부 외벽과, 상기 상부 진공영역에 진공압력이 전달되도록 척 몸체에 관통되게 형성된 진공 홀과, 상기 척 몸체의 상면에 안착된 웨이퍼를 분리시키는 분리 핀이 이동되도록 척 몸체에 관통되게 형성된 분리핀 이동공을 포함, 구성되는 반도체 제조설비의 진공 척에 관한 것이다.10-0545670 (Special) A vacuum chuck fixed to a stage of a semiconductor manufacturing facility to fix a wafer using a suction force of a vacuum, the chuck body having a predetermined thickness and formed in a wafer-like shape, and the wafer A plurality of wafer fixing tips formed on an upper surface of the chuck body to support a rear surface of the chuck body, an upper outer wall formed around the upper surface of the chuck body to block a circumferential surface of the upper vacuum region formed by the wafer fixing tip, and the chuck body A plurality of chuck fixing tips formed on the bottom of the chuck body such that the chuck is fixed to the stage of the semiconductor manufacturing equipment, and a lower outer wall formed around the bottom of the chuck body to block the circumferential surface of the lower vacuum region formed by the chuck fixing tip; A vacuum hole formed through the chuck body so that the vacuum pressure is transmitted to the upper vacuum region, and the chuck body Separation for separating the wafer mounting surface to include a release pin to be moved through-hole formed in the chuck body such that the moving pin, to a vacuum chuck of the semiconductor manufacturing equipment is configured.
상기한 종래의 기술은 웨이퍼를 지지하는 핀의 간격이 넓게 구성되어 진공으로 웨이퍼를 흡착 시킬 때 핀이 구성되지 않은 부분에는 웨이퍼의 처짐 현상이 발생하게 되어 평면 유지가 전혀 되지 않아 공정처리가 제대로 이루어지지 않게 됨으로써 생산성이 저하되는 문제점이 있다.The conventional technology described above has a wide spacing of the pins for supporting the wafer, and thus, when the wafer is adsorbed by vacuum, the wafer is not formed and the wafer sag occurs. There is a problem that the productivity is lowered by not being.
다른 형태의 기술을 살펴보면, 웨이퍼를 지지하는 웨이퍼 고정용 핀이 다수개의 촘촘하게 구성되어 웨이퍼가 처지는 것을 방지하는 것을 중심적으로 기재 하고 있지만, 상부가 돌출되어 뾰족하다 보니, 흡착 시에 웨이퍼가 접촉되는 부분이 손상되거나 치핑 현상이 발생할 수 있는 문제점이 있다.Looking at other forms of technology, it is mainly described that the wafer holding pins supporting the wafer are formed in a plurality of densely and prevent the wafer from sagging. There is a problem that can be damaged or chipping phenomenon.
상기 형태의 기술은 웨이퍼를 지지하는 웨이퍼 고정용 핀으로만 제작된 반도체 제조설비의 진공 척을 사용할 경우, 웨이퍼가 웨이퍼를 지지하는 웨이퍼 공정용 핀에 접촉되는 부분이 작기 때문에 웨이퍼 휨이 심할 경우 진공이 잡히지 않아 공정을 진행하지 못하는 문제점이 있다. The above-described technology uses a vacuum chuck of a semiconductor manufacturing facility made only of a wafer holding pin for supporting a wafer, so that the wafer is in small contact with the wafer processing pin for supporting the wafer. There is a problem that can not proceed because the process is not caught.
본 발명은 상기한 종래 기술의 문제점을 해결하기 위하여 안출해낸 것으로, The present invention has been made to solve the above problems of the prior art,
실리콘, 알루미나, 사파이어, 석영, 금속, 수지 중 어느 하나의 재질로 구성되되, 본체의 상측으로 다수개의 지지핀을 구성하고 상기 지지핀의 사이에 상기 본체의 지름보다 작게 구성되는 링지지핀을 구성하여, 웨이퍼를 안착시켜 공정을 진행 할 시에 상기 웨이퍼가 하부로 처지는 것을 방지 할 수 있도록 하여 평면을 유지할 수 있도록 함과 동시에 상기 지지핀과 링지지핀을 사용함으로써 진공구역을 분할해서 안착 가능하도록 하여 휨이 심한 웨이퍼도 안착 가능하도록 하며, 상기 지지핀과 링지지핀의 상측 면을 라운드지게 형성하여 웨이퍼와 접촉하는 면을 최소화 시켜 공정 중에 파손 및 데미지를 최소화 시킬 수 있도록 하는 제품을 제공함에 주안점을 두고 그 기술적 과제로 창안해낸 것이다.It is composed of any one material of silicon, alumina, sapphire, quartz, metal, resin, and comprises a plurality of support pins on the upper side of the main body and a ring support pin configured smaller than the diameter of the main body between the support pins. Thus, the wafer can be prevented from sagging downward while the wafer is settled, so that the wafer can be kept flat and the vacuum pin can be partitioned and seated by using the support pin and the ring support pin. It is possible to settle wafers with severe warpage, and to provide products that minimize the damage and damage during the process by minimizing the contact surface with the wafer by forming the upper surface of the support pin and the ring support pin round. It was created as a technical task.
이에 본 발명은 웨이퍼(w)와 유사한 형상으로 형성된 본체부(110)와, 상기 본체부(110)의 상측으로 상기 웨이퍼(w)의 하부를 지지하는 다수개의 지지핀(111)과, 상기 지지핀(111)에 의해서 형성되는 진공영역(113)과, 상기 진공영역(113)에 진공압력이 전달되도록 본체부(110)에 관통되게 형성된 진공 홀(114)과, 상기 지지핀(111)의 상면에 안착된 웨이퍼(w)를 분리시키는 분리 핀(210)이 이동되도록 본체 부(110)에 관통되게 형성된 분리핀 이동공(115)으로 구성되는 반도체 제조설비용 진공 척에 있어서, 상기 지지핀(111)의 사이에는 상기 본체부(110)보다 작은 지름으로 상기 지지핀(111)과 동일한 높이로 링지지핀(112)이 구성되고, 상기 지지핀(111)과 링지지핀(112)은 측단 면이 “
Figure PCTKR2013005321-appb-I000001
”자 형상으로 구성되어 상기 웨이퍼(w)가 안착 시 손상을 최소화 할 수 있도록 구성되며, 상기 각각의 링지지핀(112)에 진공 홀(114)이 위치하여 구역별로 안착이 가능하도록 구성되는 것을 기술적 특징으로 한다.Accordingly, the present invention provides a main body 110 formed in a shape similar to the wafer w, a plurality of support pins 111 supporting the lower portion of the wafer w above the main body 110, and the support. The vacuum region 113 formed by the pin 111, the vacuum hole 114 formed to penetrate the body portion 110 so that the vacuum pressure is transmitted to the vacuum region 113, and the support pin 111 In the vacuum chuck for semiconductor manufacturing equipment consisting of a separation pin moving hole 115 formed to penetrate the body portion 110 so that the separation pin 210 separating the wafer (w) seated on the upper surface, the support pin Between the 111, the ring support pin 112 is formed at the same height as the support pin 111 with a diameter smaller than the body portion 110, the support pin 111 and the ring support pin 112 is The side cross section is
Figure PCTKR2013005321-appb-I000001
It is configured in the shape of '”is configured to minimize the damage when the wafer (w) is seated, the vacuum hole 114 is located in each of the ring support pin 112 is configured to be seated by zone It is technical feature.
본 발명에 따른 평탄도 유지와 치핑방지에 용이한 반도체 제조설비용 진공 척에 의하면, 진공 척의 상측으로 웨이퍼를 지지하는 지지핀과 링지지핀을 동시에 구성되어 지지핀과 링지지핀을 동시에 사용할 수 있게 됨으로써 웨이퍼의 평탄도를 유지할 수 있게 되어 생산성을 극대화 시킬 수 있음은 물론, 상기 지지핀과 링지지핀의 상측 면을 라운드지게 형성하여 상기 웨이퍼와 접촉되는 면을 최소화 하여 데미지를 줄일 수 있을 뿐만 아니라 진공구역을 분할해서 웨이퍼 안착이 가능하게 하여 휘어짐이 심한 웨이퍼도 안착이 가능한 유용한 발명인 것이다.According to the vacuum chuck for semiconductor manufacturing equipment, which maintains flatness and prevents chipping, according to the present invention, a support pin and a ring support pin for simultaneously supporting a wafer on the upper side of the vacuum chuck can be used at the same time. As a result, the flatness of the wafer can be maintained to maximize productivity, and the upper surfaces of the support pins and the ring support pins are rounded to minimize damage to the wafer by minimizing contact with the wafer. Rather, it is a useful invention that allows wafers to be seated by dividing the vacuum zone to allow the wafers to be severely bent.
도 1은 종래의 진공 척의 사용 상태를 나타내는 사용상태도1 is a use state diagram showing a use state of a conventional vacuum chuck
도 2는 본 발명의 바람직한 실시 예를 나타내는 평면도2 is a plan view showing a preferred embodiment of the present invention
도 3은 본 발명의 바람직한 실시 예를 나타내는 측면도Figure 3 is a side view showing a preferred embodiment of the present invention
도 4는 본 발명의 바림직한 실시 예의 진공 홀을 나타내는 도면4 shows a vacuum hole in a preferred embodiment of the present invention.
도 5는 본 발명의 바람직한 실시 예의 분리핀 이동공을 나타내는 도면5 is a view showing a separation pin moving hole of a preferred embodiment of the present invention
도 6은 본 발명의 바람직한 실시 예의 반도체 제조설비의 스테이지에 고정된 상태를 나타내는 도면6 is a view showing a state fixed to the stage of the semiconductor manufacturing equipment of a preferred embodiment of the present invention
도 7은 본 발명의 바람직한 실시 예를 나타내는 사용상태도7 is a use state diagram showing a preferred embodiment of the present invention
통상적으로 진공 척은 도 1에 도시된 바와 같이 웨이퍼(w)를 지지하는 역할을 할 수 있도록 다수개의 돌출되는 핀이 구성되어 지지하게 되지만, 종래의 기술에는 핀의 다수개로 구성되되 간격이 넓게 구성되어 상기 웨이퍼(w)가 처지는 현상이 발생하게 되어 평탄도를 유지할 수가 없어 공정처리가 제대로 이루어지지 않아 생산성이 저하되었다. 또한, 핀의 간격을 촘촘하게 구성하여 평탄도를 유지할 수 있었지만, 핀과 접촉되는 부분이 뾰족하여 웨이퍼(w)의 스크래치 및 피칭 현상이 발생하게 되었다.Typically, the vacuum chuck is configured to support a plurality of protruding pins to serve to support the wafer (w) as shown in Figure 1, but in the prior art is composed of a plurality of pins but a wide interval As a result, the wafer w sags to occur, and thus flatness cannot be maintained. In addition, although the flatness could be maintained by forming the pin spacing tightly, the contact portion of the pin was sharp, resulting in scratching and pitching of the wafer w.
이에 본 발명에서는 웨이퍼(w)를 지지하며 평탄도를 유지할 수 있도록 지지핀(111)과 링지지핀(112)을 구성하되, 상기 지지핀(111)과 링지지핀(112)의 모서리부분을 라운드지게 가공하여 웨이퍼(w)의 평탄도를 유지함과 동시에 웨이퍼(w)가 안착 시 접촉되는 부분을 최소화 하여 스크래치 및 치핑을 최소화 할 수 있는 평탄도와 치핑방지에 용이한 반도체 제조설비용 진공 척을 제공한다.Accordingly, in the present invention, the support pin 111 and the ring support pin 112 are configured to support the wafer w and maintain the flatness, and the edges of the support pin 111 and the ring support pin 112 are formed. The vacuum chuck for semiconductor manufacturing equipment which is easy to prevent chipping and flatness to minimize scratches and chipping by minimizing the contact part when the wafer w is seated while maintaining the flatness of the wafer w by rounding processing to provide.
이하, 첨부되는 도면과 관련하여 상기 목적을 달성하기 위한 본 발명의 바람직한 구성 및 작용에 대하여 도 2내지 도 7을 참고로 하여 설명하면 다음과 같다.Hereinafter, with reference to the accompanying drawings, the preferred configuration and operation of the present invention for achieving the above object with reference to Figures 2 to 7 as follows.
우선 본 발명을 설명하기에 앞서 도 2 내지 도 3에 도시된 바와 같이 그 구성을 살펴보면, 웨이퍼(w)와 유사한 형상으로 형성된 본체부(110)와, 상기 본체부(110)의 상측으로 상기 웨이퍼(w)의 하부를 지지하는 다수개의 지지핀(111)과, 상기 지지핀(111)에 의해서 형성되는 진공영역(113)과, 상기 진공영역(113)에 진공압력이 전달되도록 본체부(110)에 관통되게 형성된 진공 홀(114)과, 상기 지지핀(111)의 상면에 안착된 웨이퍼(w)를 분리시키는 분리 핀(210)이 이동되도록 본체 부(110)에 관통되게 형성된 분리핀 이동공(115)으로 구성되는 반도체 제조설비용 진공 척에 있어서, 상기 지지핀(111)의 사이에는 상기 본체부(110)보다 작은 지름으로 상기 지지핀(111)과 동일한 높이로 링지지핀(112)이 구성되고, 상기 지지핀(111)과 링지지핀(112) 측단 면이 “
Figure PCTKR2013005321-appb-I000002
”자 형상으로 구성되어 상기 웨이퍼(w)가 안착 시 손상을 최소화 할 수 있도록 구성되며, 상기 각각의 링지지핀(112)에 진공 홀(114)이 위치하여 구역별로 안착이 가능하도록 구성되는 것이다.First, before describing the present invention, as shown in FIG. 2 to FIG. 3, the configuration thereof includes a main body 110 formed in a shape similar to a wafer w, and the wafer above the main body 110. A plurality of support pins 111 supporting the lower portion of (w), the vacuum region 113 formed by the support pins 111, and the body portion 110 so that the vacuum pressure is transmitted to the vacuum region 113 Moving the separation pin formed to penetrate the body portion 110 so that the vacuum hole 114 formed to penetrate the through) and the separation pin 210 for separating the wafer (w) seated on the upper surface of the support pin 111 is moved. In the vacuum chuck for semiconductor manufacturing equipment consisting of a ball 115, the ring support pin 112 between the support pins 111 and the same height as the support pins 111 with a diameter smaller than the body portion 110. ) Is configured, and the support pin 111 and the ring support pin 112 side end surface "
Figure PCTKR2013005321-appb-I000002
It is configured in the shape of '”is configured to minimize the damage when the wafer (w) is seated, the vacuum hole 114 is located in each ring support pin 112 is configured to be seated by zones. .
상기 진공 척(100)은 웨이퍼(w)에 정밀하게 회로 선폭이 투영되기 위해 웨이퍼(w)를 받쳐주는 지그 역할을 하는 것으로서, 상기 웨이퍼(w)는 일반적으로 평면도가 0.2㎛ 단위로 관리되고 있으나, 실리콘 웨이퍼(w) 자체의 휨 현상을 지니고 있으며 이러한 휨 현상을 보정하여 주는 역할을 하게 되는데, 다시 말해 정확한 지점에 웨이퍼(w)가 자리 잡도록 하며, 진공을 이용하여 웨이퍼(w)를 적당한 압력으로 당겨주어 웨이퍼(w)의 휘어진 상태를 펴주는 역할을 하게 되는 것이다.The vacuum chuck 100 serves as a jig for supporting the wafer w in order to accurately project the circuit line width onto the wafer w, and the wafer w is generally managed in 0.2 μm units. In addition, the silicon wafer (w) has a warpage phenomenon itself, and serves to compensate for this warpage phenomenon, that is, to position the wafer (w) at the correct point, using a vacuum to press the wafer (w) appropriate pressure By pulling to serve to straighten the bent state of the wafer (w).
상기 본체부(110)는 도 3에 도시된 바와 같이 상부로 돌출되는 다수개의 지지핀(111)이 구성되는 상기 지지핀(111)은 종래에 있어, 촘촘하게 구성되는 제품들이 있지만, 도 1에 도시된 바와 같이 그 측단 면이 “
Figure PCTKR2013005321-appb-I000003
” 로 형성되어 있다 보니 웨이퍼(w)가 안착되어 흡착 되되 모서리 부분과 접촉되어 스크래치 및 데미지가 크게 되어 불량률 및 생산성이 저하 될 수밖에 없다.The main body 110 is a support pin 111 is composed of a plurality of support pins 111 protruding upward as shown in FIG. As you can see, the side
Figure PCTKR2013005321-appb-I000003
As the wafer w is seated and adsorbed, it is in contact with the edge portion, and scratches and damage are increased, resulting in deterioration of defect rate and productivity.
하지만, 본 발명의 상기 지지핀(111)은 측단면이 “
Figure PCTKR2013005321-appb-I000004
”자 형상으로 형상되어 상부에 안착되는 웨이퍼(w)와 접촉되는 부분을 최소화 시켜 스크래치 및 데미지를 줄일 수 있게 되는 것이다.However, the support pin 111 of the present invention is a side cross-section "
Figure PCTKR2013005321-appb-I000004
It is possible to reduce scratches and damages by minimizing the portion that is in contact with the wafer (w) seated on the upper portion of the shape.
여기서, 상기 지지핀(111)의 사이에는 상기 본체부(110)의 내측으로 상기 지지핀(111)과 동일한 높이를 갖는 링지지핀(112)이 구성된다. 상기 링지지핀(112)은 도 2에 도시된 바와 같이 형성되어 진공 흡착 시 웨이퍼(w)를 지지핀(111)과 더불어 동시에 지지 할 수 있게 되어 처짐을 방지함과 동시에 평탄도를 유지할 수 있게 되는 것이다.Here, the ring support pins 112 having the same height as the support pins 111 are formed inside the main body 110 between the support pins 111. The ring support pin 112 is formed as shown in FIG. 2 to simultaneously support the wafer w together with the support pin 111 during vacuum adsorption, thereby preventing sag and maintaining flatness. Will be.
또한, 상기 지지핀(111)과 링지지핀(112)은 측단 면이 “
Figure PCTKR2013005321-appb-I000005
”자 형상으로 형성되어 웨이퍼(w)가 안착되어 진공력으로 흡착 시 웨이퍼(w)와 맞닿는 면을 최소화 시켜 상기 웨이퍼(w)의 스크래치 및 데미지를 줄일 수 있게 되어 제품의 질이 향상되어 경제적 효율성 및 작업능률이 향상되는 것이다.In addition, the support pin 111 and the ring support pin 112 has a side end surface "
Figure PCTKR2013005321-appb-I000005
'' Formed to shape the wafer (w) is settled to minimize the surface contact with the wafer (w) when adsorbed by the vacuum force to reduce the scratch and damage of the wafer (w) to improve the quality of the product economic efficiency And work efficiency is improved.
종래에 있어 웨이퍼(w)를 지지하는 미세한 사이즈의 핀 들은 직각으로 형성되는데 이는, 미세한 사이즈의 핀들의 라운드지게 가공하는 것은 어려운 기술력을 요하는 것이다. 하지만 본 발명에서 미세한 사이즈의 지지핀(111)과 링지지핀(112)을 라운드지게 구성되어 종래의 문제점을 해소 할 수 있게 되는 것이다.In the related art, fine-sized fins supporting the wafer w are formed at right angles, which makes it difficult to process the rounded fins of the micro-sized fins. However, in the present invention, the support pins 111 and the ring support pins 112 of a fine size are rounded to solve the conventional problems.
상기 지지핀(111)과 링지지핀(112)의 상부에 안착된 웨이퍼(w)는 흡입공(220)에서 흡착시키게 되면 웨이퍼(w)가 지지핀(111)과 링지지핀(112)과 맞닿는 부분을 제외한 다른 부분이 진공영역(113)으로 휘어지게 되는 것이다.When the wafer w seated on the support pin 111 and the ring support pin 112 is adsorbed in the suction hole 220, the wafer w is supported by the support pin 111 and the ring support pin 112. Except for the abutting portion, other portions are bent to the vacuum region 113.
또한, 상기 지지핀(111)과 링지지핀(112)이 촘촘하게 형성됨에 따라 그 사이사이에는 자동적으로 물질이 존재 하지 않는 공간인 진공영역(113)이 형성되는 것이다. 상기 진공영역(113)으로 인해 하기될 스테이지(200)와 결합 시에 흡입공(220)에서 진공흡착 시키게 되면 웨이퍼(w)가 지지핀(111)과 링지지핀(112)에 맞닿는 부분을 제외한 다른 부분이 하부로 휘어지게 되는 것이다. In addition, as the support pins 111 and the ring support pins 112 are densely formed, the vacuum region 113, which is a space in which no material exists, is automatically formed therebetween. When the vacuum area 113 is coupled to the stage 200 to be described below, the suction hole 220 is vacuum adsorbed, except for a portion where the wafer w contacts the support pin 111 and the ring support pin 112. The other part will bend downward.
도 4에 도시된 바와 같이 상기 본체부(110)를 관통하는 다수개의 진공 홀(114)이 구성되어 스테이지(200)에 구성된 흡입공(220)과 연결 구성되어 상기 본체부(110)의 상부에 구성된 웨이퍼(w)를 진공흡착 시킬 수 있게 되는 것이다. 상기 진공 홀(114)은 본 발명에서는 주로 상기 본체부(110)의 대각선 방향으로 배열되어 구성되도록 도시하였지만, 필요에 따라 진공 척(100)을 중심으로 원형을 형성하도록 배열 구성하여 사용할 수도 있다.As shown in FIG. 4, a plurality of vacuum holes 114 penetrating through the main body 110 are configured to be connected to the suction hole 220 configured in the stage 200 to the upper portion of the main body 110. It is to be able to vacuum-absorb the configured wafer (w). In the present invention, the vacuum holes 114 are mainly configured to be arranged in a diagonal direction of the main body part 110, but may be arranged and used to form a circle around the vacuum chuck 100 as necessary.
또한, 상기 진공 척(100)의 상부에 안착된 웨이퍼(w)를 분리시키는 작업을 해야 하는데, 스테이지(200)에 구성되는 분리 핀(210)이 유동할 수 있도록 도 5에 도시된 바와 같이 분리핀(210)과 동일한 크기 또는 조금 큰 크기로 분리핀 이동공(115)이 상기 본체부(110)를 관통하도록 구성된다. 상기 분리핀 이동공(115)으로 인해 상기 스테이지(200)와 결합 시 본체부(110)의 상부에 안착된 웨이퍼(w)를 손쉽게 분리시킬 수 있게 되고, 상기 분리핀 이동공(115)은 본 발명에서 세 개로 구성되는 것을 도시하였지만, 필요에 따라 정교한 작업을 필요로 할 경우에는 다수개로 구성하여도 무관하다.In addition, the operation to separate the wafer (w) seated on the upper portion of the vacuum chuck 100 should be separated, as shown in Figure 5 so that the separation pin 210 configured in the stage 200 can flow. Separation pin moving hole 115 is configured to penetrate the body portion 110 to the same size or a little larger than the pin 210. Due to the separation pin moving hole 115, when the stage 200 is coupled with the stage 200, the wafer w mounted on the upper portion of the main body 110 may be easily separated, and the separation pin moving hole 115 may be seen. Although shown in the invention is composed of three, if necessary to elaborate work if necessary may be composed of a plurality.
또한, 상기 진공 척(100)의 재질은 실리콘, 알루미나, 사파이어, 석영, 금속, 수지, 세라믹 재질 중 어느 하나의 재질로 구성하여 사용할 수도 있고, 반도체 제조설비에 구성하여 사용하되, 반도체 사진공정, 검사공정, 가공공정 등 모든 공정에서 사용이 가능하다.In addition, the material of the vacuum chuck 100 may be made of any one material of silicon, alumina, sapphire, quartz, metal, resin, ceramic material, or may be used in semiconductor manufacturing equipment, semiconductor photo process, It can be used in all processes such as inspection process and processing process.
또한, 상기 진공 척(100)의 구역은 적어도 하나 이상으로 나뉘며, 상기 진공 홀(114)도 별도로 구성 할 수 있으며, 상기 링지지핀(112)의 범위 내에 구성되는 지지핀(114)은 원형, 삼각, 사각 형상으로 배열할 수 있어 진공 척(100)을 구성함에 있어 선택적으로 형성 할 수 가 있는 것이다.In addition, the region of the vacuum chuck 100 is divided into at least one, the vacuum hole 114 may be configured separately, the support pin 114 is configured in the range of the ring support pin 112 is circular, It can be arranged in a triangular, square shape that can be selectively formed in configuring the vacuum chuck (100).
상기와 같이 구성된 본 발명의 평탄도 유지와 치핑방지에 용이한 반도체 제조설비용 진공 척에 따른 사용 설명을 하면 다음과 같다. Referring to the use of the vacuum chuck for semiconductor manufacturing equipment easy to maintain the flatness and chipping of the present invention configured as described above are as follows.
우선 도 6에 도시된 바와 같이 진공 척(100)을 스테이지(200)에 결합 구성한 후에 다수개의 지지핀(111)과 링지지핀(112)의 상부로 웨이퍼(w)를 안착 구성한다. 이러한 후에는 흡입공(220)을 통하여 진공력을 전달하여 진공흡착을 하게 되면 웨이퍼(w)가 상기 지지핀(111)과 링지지핀(112)과 맞닿는 부분을 제외한 부분이 진공영역(113)으로 살짝 휘어지게 되며 도 7에 도시된 바와 같이 웨이퍼(w)의 평탄도를 유지할 수 있게 되는 것이다.First, as shown in FIG. 6, the vacuum chuck 100 is coupled to the stage 200, and then the wafer w is seated on the plurality of support pins 111 and the ring support pins 112. After this, if vacuum suction is performed by transferring a vacuum force through the suction hole 220, the portion of the wafer w except for the portion in which the wafer w is in contact with the support pin 111 and the ring support pin 112 is located in the vacuum region 113. It will be slightly bent to be able to maintain the flatness of the wafer (w) as shown in FIG.
또한, 그 후에는 다수개의 회로를 선폭 하여 정밀하게 작업을 하게 되고 공정처리가 완료가 되면 흡입공(220)으로 진공력을 해제하게 되면, 진공영역(113)으로 살짝 휘어져 있던 웨이퍼(w)가 다시 펴지게 되고, 그 후에 분리핀 이동공(210)으로 연결 구성되는 분리 핀(115)으로 웨이퍼(w)를 진공 척(100)에서 분리시키게 되는 것이다. 여기서 상기 분리 핀(115)은 별도의 이동수단을 이용하여 상기 웨이퍼(w)를 분리시킬 수 가 있다.In addition, after that, a plurality of circuits are line-width processed precisely, and when the process is completed, when the vacuum force is released to the suction hole 220, the wafer w slightly bent in the vacuum region 113 is formed. After the spreading, the wafer w is separated from the vacuum chuck 100 by the separating pin 115 that is connected to the separating pin moving hole 210. Here, the separation pin 115 may separate the wafer w using a separate moving means.
상기한 바와 같이, 이러한 방법을 통하여 사진공정, 시각공정, 증착공정, 열처리공정, 검사공정, 가공공정을 비롯한 반도체 제조설비에서 이루어지는 모든 공정에서 사용이 가능하여 용이하게 사용할 수 있게 되는 것이다.As described above, it is possible to use in all the processes made in the semiconductor manufacturing equipment, including the photo process, visual process, deposition process, heat treatment process, inspection process, processing process through this method can be used easily.
본 발명에 따른 평탄도 유지와 치핑방지에 용이한 반도체 제조설비용 진공 척에 의하면, 진공 척(100)의 상측으로 웨이퍼(w)를 지지하는 지지핀(111)과 링지지핀(112)이 동시에 구성되어 상기 지지핀(111)과 링지지핀(112)을 동시에 사용할 수 있게 됨으로써 웨이퍼(w)의 평탄도를 유지할 수 있게 되어 생산성을 극대화 시킬 수 있음은 물론, 상기 지지핀(111)과 링지지핀(112)의 상측 면을 라운드지게 형성하여 상기 웨이퍼(w)와 접촉되는 면을 최소화 하여 데미지를 줄일 수 있을 뿐만 아니라 진공구역을 분할해서 웨이퍼(w) 안착이 가능하게 하여 휘어짐이 심한 웨이퍼도 안착이 가능한 유용한 발명인 것이다.According to the vacuum chuck for semiconductor manufacturing equipment which is easy to maintain flatness and prevent chipping according to the present invention, the support pin 111 and the ring support pin 112 for supporting the wafer (w) above the vacuum chuck 100 is Since the support pin 111 and the ring support pin 112 can be used at the same time, the flatness of the wafer w can be maintained, thereby maximizing productivity, as well as the support pin 111. The upper surface of the ring support pin 112 is rounded to minimize damage by minimizing the contact surface with the wafer w, as well as dividing the vacuum area to allow the wafer (w) to be seated, thereby causing severe bending. Wafer is also a useful invention that can be seated.

Claims (3)

  1. 웨이퍼(w)와 유사한 형상으로 형성된 본체부(110)와, 상기 본체부(110)의 상측으로 상기 웨이퍼(w)의 하부를 지지하는 다수개의 지지핀(111)과, 상기 지지핀(111)에 의해서 형성되는 진공영역(113)과, 상기 진공영역(113)에 진공압력이 전달되도록 본체부(110)에 관통되게 형성된 진공 홀(114)과, 상기 지지핀(111)의 상면에 안착된 웨이퍼(w)를 분리시키는 분리 핀(210)이 이동되도록 본체부(110)에 관통되게 형성된 분리핀 이동공(115)으로 구성되는 반도체 제조설비용 진공 척에 있어서,Body portion 110 formed in a shape similar to the wafer (w), a plurality of support pins 111 for supporting the lower portion of the wafer (w) above the body portion 110, and the support pins 111 The vacuum region 113 is formed by the, the vacuum hole 114 formed to penetrate the body portion 110 so that the vacuum pressure is transmitted to the vacuum region 113, and seated on the upper surface of the support pin 111 In the vacuum chuck for semiconductor manufacturing equipment comprising a separation pin moving hole 115 formed to penetrate the body portion 110 so that the separation pin 210 for separating the wafer (w) is moved,
    상기 지지핀(111)의 사이에는 상기 본체부(110)보다 작은 지름으로 상기 지지핀(111)과 동일한 높이로 링지지핀(112)이 구성되고,A ring support pin 112 is formed between the support pins 111 at the same height as the support pins 111 with a diameter smaller than that of the main body unit 110.
    상기 지지핀(111)과 링지지핀(112)은 측단 면이 “
    Figure PCTKR2013005321-appb-I000006
    ”자 형상으로 구성되어 상기 웨이퍼(w)가 안착 시 손상을 최소화 할 수 있도록 구성되며,     The support pin 111 and the ring support pin 112 has a side end surface “
    Figure PCTKR2013005321-appb-I000006
    It is configured in the shape of “” and configured to minimize damage when the wafer (w) is seated.
    상기 각각의 링지지핀(112)에 진공 홀(114)이 위치하여 구역별로 안착이 가능하도록 구성되는 것을 특징으로 하는 평탄도 유지와 치핑방지에 용이한 반도체 제조설비용 진공 척      Vacuum hole 114 is located in each of the ring support pin 112 is configured to be seated for each zone vacuum chuck for semiconductor manufacturing equipment easy to maintain flatness and preventing chipping
  2. 제 1항에 있어서,The method of claim 1,
    상기 진공 척(100)의 구역은 적어도 하나 이상으로 나뉘며, 상기 진공 홀(114)도 별도로 구성 할 수 있는 것을 특징으로 하는 평탄도 유지와 치핑방지에 용이한 반도체 제조설비용 진공 척The vacuum chuck 100 for semiconductor manufacturing equipment that is easy to maintain flatness and chipping, characterized in that divided into at least one zone of the vacuum chuck 100, the vacuum hole 114 can be configured separately.
  3. 제 1항에 있어서,The method of claim 1,
    상기 링지지핀(112)의 범위 내에 구성되는 지지핀(111)은 원형, 삼각, 사각 형상으로 배열할 수 있는 것을 특징으로 하는 평탄도 유지와 치핑방지에 용이한 반도체 제조설비용 진공 척 The support pins 111 configured within the range of the ring support pins 112 may be arranged in a circular, triangular, or square shape to maintain flatness and prevent chipping.
PCT/KR2013/005321 2013-04-16 2013-06-17 Vacuum chuck for semiconductor production equipment used for flatness maintenance and chipping prevention WO2014171584A1 (en)

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