CN110391165A - Shift support plate and crystal grain support plate - Google Patents
Shift support plate and crystal grain support plate Download PDFInfo
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- CN110391165A CN110391165A CN201810348132.1A CN201810348132A CN110391165A CN 110391165 A CN110391165 A CN 110391165A CN 201810348132 A CN201810348132 A CN 201810348132A CN 110391165 A CN110391165 A CN 110391165A
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- support plate
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- thermal expansion
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
Abstract
The present invention discloses a kind of transfer support plate, to shift multiple micro elements on a first substrate to a second substrate.This transfer support plate includes a substrate and multiple transfer members.Those transfer members are arranged at intervals at a upper surface of the substrate.Each transfer member has opposite a first surface and a second surface.Those transfer members contact this substrate with first surface.Wherein, the thermal expansion coefficient of the substrate and the thermal expansion coefficient of those transfer members be not identical, and the difference of the thermal expansion coefficient of the thermal expansion coefficient and those micro elements of those transfer members is less than the difference of the thermal expansion coefficient of the substrate and the thermal expansion coefficient of those transfer members.Invention additionally discloses a kind of crystal grain support plates.
Description
Technical field
The present invention about a kind of transfer support plate and crystal grain support plate, especially a kind of transfer support plate with surface micro-structure with
Crystal grain support plate.
Background technique
Light emitting diode (light emitting diode, LED) is used as efficient light-emitting component, is widely used
In various fields.Current existing method of manufacturing luminescent device is that N-type is sequentially formed in epitaxial substrate by way of epitaxy
Semiconductor layer, luminescent layer, p type semiconductor layer and electrode, obtain light-emitting component whereby.
Miniature light-emitting component is formed when light-emitting component size reduction to micron (micrometer, μm) grade, and is answered
When for display device, the miniature light-emitting device array arrangement that numerous miniature light-emitting components are constituted is on a display panel using as aobvious
The light source of showing device.And usually display device manufacturing method is that miniature light-emitting component is first formed in epitaxial substrate.Then pass through
Transfer support plate removes miniature light-emitting component from epitaxial substrate, then the miniature light-emitting component removed is arranged in display panel
On.Reach flood tide whereby to shift miniature light-emitting component, improve process efficiency.It more specifically, is the miniature light-emitting component of cooperation
Made miniature electronic part is also required to improve process efficiency using flood tide transfer techniques.
In general, in this transfer process, transfer support plate can be heated in certain programs, so that miniature luminous member
Part can temporarily be bonded to transfer support plate, or enabling to shift support plate separates with miniature light-emitting component to allow miniature luminous member
Part is set on display panel.But when transfer support plate is heated, the structure for shifting support plate is possible to expand because of heat, causes
Structure on transfer support plate can not precisely be aligned with each miniature light-emitting component in epitaxial substrate, or allowed and be temporarily bonded to transfer
Each miniature light-emitting component of support plate can not be aligned with the driving circuit on display panel, cause technologic puzzlement, or even reduce
Overall acceptability rate.
Summary of the invention
It can not due to thermally expanding phenomenon to improve transfer support plate the invention reside in a kind of transfer support plate and crystal grain support plate is provided
Precisely the problem of contraposition.
The invention discloses a kind of transfer support plates.This transfer support plate is to shift multiple micro elements on a first substrate
To a second substrate.This transfer support plate includes a substrate and multiple transfer members.This substrate has a upper surface.These transfer members are set
It is placed in the upper surface of the substrate.Each transfer member has opposite a first surface and a second surface.These transfer members
This substrate is contacted respectively with these first surfaces.Wherein, the thermal expansion coefficient of the thermal expansion coefficient of the substrate and transfer member
It is not identical.The difference of the thermal expansion coefficient of the thermal expansion coefficient and these micro elements of transfer member is less than the thermal expansion system of this substrate
Several differences with the thermal expansion coefficient of transfer member.
Transfer support plate disclosed in this invention, wherein the thermal conductivity coefficient of each transfer member is greater than the thermal conductivity coefficient of this substrate
Twice, less than five times of the thermal conductivity coefficient of this substrate.
Transfer support plate disclosed in this invention, wherein this substrate is sapphire substrate, and the material of transfer member includes gallium nitride.
Transfer support plate disclosed in this invention, wherein the thermal expansion coefficient of the thermal expansion coefficient of each transfer member and this substrate
Difference no more than this substrate thermal expansion coefficient 50 percent and no more than this substrate thermal expansion coefficient percent
Ten.
Transfer support plate disclosed in this invention, further includes multiple adhesion blocks for separating setting, and each adhesion block is located at
The second surface of one of these transfer members.
Transfer support plate disclosed in this invention, wherein each adhesion block is located within the periphery of corresponding second surface.
Transfer support plate disclosed in this invention, wherein the second surface of each transfer member forms a groove, these adhesion blocks
It is located in these grooves of these transfer members.
Transfer support plate disclosed in this invention, further includes an adhesion coating, and adhesion coating covers these transfer members and this substrate
Upper surface.
Transfer support plate disclosed in this invention, wherein this adhesion coating is greater than adhesion coating in each in the thickness on first surface
Thickness on the second surface of transfer member.
The invention also discloses a kind of crystal grain support plates.This crystal grain support plate include a substrate, multiple transfer members, an adhesion coating with
Multiple micro elements.This substrate has a upper surface.These transfer members are set to the upper surface of this substrate.Each transfer member has
An opposite first surface and a second surface.These transfer members contact this substrate respectively with these first surfaces.Described is viscous
Layer be set on the second surface of these transfer members.Each micro element is bonded to its of these transfer members by this adhesion coating
One of second surface on.Wherein, the thermal expansion coefficient of this substrate and the thermal expansion coefficient of transfer member be not identical.Transfer member
The difference of thermal expansion coefficient and any thermal expansion coefficient of these micro elements is less than a default threshold value.
Crystal grain support plate disclosed in this invention, wherein the thermal conductivity coefficient of these transfer members is greater than the thermal conductivity coefficient of this substrate
Twice, less than five times of the thermal conductivity coefficient of this substrate.
Crystal grain support plate disclosed in this invention, wherein this substrate is sapphire substrate, and the material of these transfer members includes nitrogen
Change gallium, these micro elements are that micro-led and these micro elements material includes gallium nitride.
Crystal grain support plate disclosed in this invention, the wherein thermal expansion coefficient of the thermal expansion coefficient Yu this substrate of these transfer members
Difference no more than this substrate thermal expansion coefficient 50 percent and no more than this substrate thermal expansion coefficient percent
Ten.
Crystal grain support plate disclosed in this invention, wherein adhesion coating has multiple adhesion blocks for separating setting, each adhesion block
Positioned at the second surface of one of these transfer members.
Crystal grain support plate disclosed in this invention, wherein the second surface of each transfer member forms a groove, each adhesion block
In the groove of one of these transfer members.
Crystal grain support plate disclosed in this invention, wherein adhesion coating covers upper surface and these transfer members of this substrate.
Crystal grain support plate disclosed in this invention, wherein adhesion coating is greater than adhesion coating in each turn in the thickness on first surface
Move the thickness on the second surface of part.
The explanation of explanation and the following embodiments and the accompanying drawings above with respect to the content of present invention is of the invention with explanation to demonstrate
Spirit and principle, and claims of the present invention is provided and is further explained.
Detailed description of the invention
Fig. 1 is the structural schematic diagram that support plate is shifted according to depicted in one embodiment of the invention.
Fig. 2A is the structural schematic diagram that support plate is shifted according to depicted in another embodiment of the present invention.
Fig. 2 B is the structural schematic diagram that support plate is shifted according to depicted in another embodiment of the present invention.
Fig. 3 A is transfer support plate and first substrate according to depicted in one embodiment of the invention in micro element transfer process
Schematic diagram.
Fig. 3 B is transfer support plate and first substrate according to depicted in one embodiment of the invention in micro element transfer process
Schematic diagram.
Fig. 3 C is transfer support plate and the second substrate according to depicted in one embodiment of the invention in micro element transfer process
Schematic diagram.
Fig. 4 is the structural schematic diagram that support plate is shifted according to depicted in further embodiment of this invention.
Fig. 5 is the structural schematic diagram that support plate is shifted according to depicted in yet another embodiment of the invention.
Wherein, appended drawing reference:
1,2, the transfer of 2b, 3,4 support plate
10,20,30,40 substrate
50 first substrates
60 the second substrates
12,22,32,42 transfer member
242,442 adhesion block
52,52a, 52b, 52c micro element
62 driving circuits
24,34 adhesion coating
2 ' crystal grain support plates
B convex block
D1 first distance
D2 second distance
G groove
S1 first surface
S2 second surface
The upper surface Su
SW side wall
Ta, Tb, Tp thickness
W width
Specific embodiment
Describe detailed features and advantage of the invention in detail in embodiments below, content is enough to make this field
Technical staff understands technology contents of the invention and implements accordingly, and according to content disclosed in this specification, claims
And attached drawing, those skilled in the art can be readily understood upon the relevant purpose of the present invention and advantage.Embodiment below is into one
The step viewpoint that the present invention will be described in detail, but it is non-anyways to limit scope of the invention.
Depicted transfer support plate can be used to shift multiple micro elements on a first substrate according to embodiments of the present invention
To a second substrate.Wherein, first substrate is, for example, epitaxial substrate, for example micro-led to form micro element
Thereon, and the second substrate is, for example, display panel to the dependency structure of (micro LED).First substrate, the second substrate with it is miniature
The correlative detail of element please hold subsequent detailed.
Fig. 1 is please referred to, for the structural schematic diagram for shifting support plate 1 according to depicted in one embodiment of the invention, shifts support plate 1
Including substrate 10 and multiple transfer members 12.Substrate 10 has upper surface Su.Each transfer member 12 is arranged at intervals at the upper table of substrate 10
Face Su, preferably, being with the setting of equidistant array, such as being alternatively arranged with distance d2 in the direction x.It is each in each transfer member 12
It is a that there is opposite first surface S1 and second surface S2.Each transfer member 12 contacts substrate respectively with respective first surface S1
10, in the present embodiment, each transfer member 12 is fixed on the upper surface Su of substrate 10 by first surface S1.
On the other hand, the difference of the thermal expansion coefficient of the thermal expansion coefficient of each transfer member 12 and micro element to be transferred
Less than the difference of the thermal expansion coefficient of the thermal expansion coefficient and transfer member 12 of substrate 10.Preferably, in one embodiment, transfer member
The difference of the thermal expansion coefficient of 12 thermal expansion coefficient and substrate 10 no more than substrate 10 thermal expansion coefficient 50 percent,
Not less than the 10 of the thermal expansion coefficient of substrate 10.More preferably, that is to say, that substrate 10 and transfer member 12 are respectively by difference
Material it is formed when, and transfer member 12 is then made of similar material with micro element to be transferred.In general transfer carries
Plate 1 in transfer process can because technique formed stress cause substrate 10 generate warpage, or even transfer 1 use of support plate in because
Heating or pressurization may be such that stress between transfer member 12 and substrate 10 aggravates and substrate warp degree caused to increase or transfer member
Damage, displacement, and then reduce transfer qualification rate.Due to being typically involved in heating process and pressurization in the transfer process of micro element
Technique can quite be unfavorable for shifting process when shifting 1 warpage of support plate.
More specifically, the thermal conductivity coefficient of transfer member 12 is greater than twice of the thermal conductivity coefficient of substrate 10.Have by selection
There is the material of suitable thermal conductivity coefficient, when heating to transfer support plate 1, thermal energy can concentrate on transfer member 12, so as to shift
The smooth convenience of Cheng Gengjia.Preferably, the thermal conductivity coefficient of transfer member 12 is to borrow between twice to five times of the thermal conductivity coefficient of substrate 10
This to heat transfer support plate 1 to avoid the cost too many time.In a kind of state sample implementation, the material of each transfer member 12 is nothing
Machine material, for example, be, for example, the epitaxial structure based on gallium nitride (Gallium nitride, GaN), the material of substrate is
Sapphire (Sapphire), and micro element to be transferred is then micro-led structure.
It is please the structural representation that support plate is shifted according to depicted in another embodiment of the present invention referring next to Fig. 2A, Fig. 2A
Figure.In the embodiment shown in Fig. 2A, the structure for shifting support plate 2 is generally similar in transfer support plate 1 above-mentioned, including substrate 20
With multiple transfer members 22 being set on substrate 20, correlative detail not repeats to repeat.The difference is that transfer support plate 2 is also
With adhesion coating 24.Adhesion coating 24 has multiple adhesion blocks 242.Each adhesion block 242 is separated setting.Each adhesion block 242 divides
It one of is not located therein the second surface S2 of transfer member 22.In one embodiment, respectively adhesion block 242 such as first coating flood adhesion
It is defined after material with Patternized technique.In another embodiment, respectively adhesion block 242 is, for example, that transfer support plate 1 above-mentioned passes through
Associated materials are picked to form.In another embodiment, each block 242 of adhering is, for example, that mode for dispensing glue is individually formed at transfer member
Two surfaces.The material of each adhesion block 242 is, for example, black photoresist, opaque glue material, multilayer chromium film or resin.
Continue it is aforementioned, within the periphery of each second surface S2 that block 242 is located at corresponding transfer member 22 of adhering.Institute
The periphery of the second surface S2 of meaning is the edge of second surface S2, or refers to the friendship of the side wall SW of second surface S2 and transfer member 22
At boundary.For another angle, each block 242 of adhering covers the part of the second surface S2 of each transfer member 22, and each transfer member
22 side wall SW is not covered by each adhesion block 242.
Other than Fig. 2A cited case, in the embodiment of another like, each edge for adhering block 242 trims corresponding
Second surface S2 periphery.Whereby, with the kind second surface S2 with each transfer member 22, and increase transfer support plate 2 can be used to
The surface area of binding miniature element.
And in the embodiment of another like, (Fig. 2 B is according to depicted in another embodiment of the present invention as shown in Figure 2 B
Transfer support plate structural schematic diagram), other than covering corresponding second surface S2, adhesion block 242 also prolongs adhesion block 242
Stretch at least part for covering the side wall SW of corresponding transfer member 22.For another angle, adhesion block 242 has been covered
The second surface S2 of whole transfer member 22, and block 242 of adhering exceeds the periphery of second surface S2 and prolongs along the y-axis direction toward substrate 20
It stretches and touches at least part of side wall SW of transfer member 22.Whereby, increase in addition to the second surface S2 with transfer member 22 can be apt to
Add transfer support plate 2b that can be used to except the surface area of binding miniature element, each adhesion block 242 can also be made more securely to adhere to
In corresponding transfer member 22.
Please examined referring next to Fig. 3 A to Fig. 3 C with illustrating to shift how support plate is used with the design of related elements more than you know
Consider, Fig. 3 A and Fig. 3 B are transfer support plate and first substrate according to depicted in one embodiment of the invention in micro element transfer process
In corresponding each stage opposite schematic diagram, Fig. 3 C be transfer support plate and the second substrate according to depicted in one embodiment of the invention
The opposite schematic diagram of phase III in micro element transfer process.It is with the transfer support plate in Fig. 2A in Fig. 3 A to Fig. 3 C
Illustrate for 2.In addition, first substrate 50 and micro element 52a, 52b, 52c thereon are also painted in Fig. 3 A to Fig. 3 B,
And the second substrate 60 and driving circuit 62 thereon are also painted in Fig. 3 C.
As shown in Figure 3A, multiple micro elements 52 are provided on first substrate 50, in this measure micro element 52a, 52b, 52c
For be illustrated, the quantity of right micro element 52a, 52b, 52c, arrangement are not limited thereto.Each micro element
52a, 52b, 52c for example, micro-led (micro lightemitting diode, micro LED), include P
Type doped layer, n-type doping layer, luminescent layer and electrode layer.It above are only citing demonstration, micro-led actual implementation state
Sample is not limited thereto.In other embodiments, micro element is also possible to the electronic component for needing largely to shift, such as miniature
Chip, micro sensor etc..
With first distance d1 on first substrate 50 in each micro element 52a, 52b, 52c x-axis direction shown in drawing
It is alternatively arranged.In contrast, transfer support plate 2 transfer member 22 in x-axis direction on the base plate 20 with the interval second distance d2 row
Column.Second distance d2 is different from first distance d1.In this embodiment, second distance d2 is greater than first distance d1 and micro element
The sum of 52 width W, to realize that selective pickup (selective pick-up) is transferred to second to adjust micro element 52
Spacing on substrate 60.In practice, homochromy micro-led (micro element 52) is transferred to using transfer support plate 2 aobvious
Show on the substrate of panel, and it is homochromy it is each it is micro-led adhere to different pixel units separately, therefore in general, second away from
Size from d2 is associated with the pixel relative distance on display panel again.
The stage as shown in Fig. 3 A and Fig. 3 B, firstly, each adhesion block 242 on transfer support plate 2 and phase on first substrate 50
The micro element 52a answered is in contact.Then, it shifts support plate 2 and first substrate 50 is heated and other necessary processes
It is performed, so that micro element 52a is adhered to by each adhesion block 242 to separate from first substrate 50, and the miniature member being attached
Part 52a is temporarily bonded to transfer support plate 2 (as shown in Figure 3B) and forms a crystal grain support plate 2 '.
Then, as shown in Figure 3 C, crystal grain support plate 2 ' is docked with a second substrate 60 so that micro element 52a and the second substrate
Corresponding driving circuit 62 engages on 60.It is connect in crystal grain support plate 2 ' in the equipment operation of practice, can be moved with the second substrate 60
It closes, be also possible to first substrate 50 and the second substrate 60 and be moved so that the second substrate 60 is placed in dock with crystal grain support plate 2 '
Position.Then, substrate 20 is heated with the second substrate 60 and other necessary processes are also carried out, so that micro element
52a is separated and is bonded on the predetermined position of the second substrate 60 by convex block (bump) B, each micro element 52a with transfer support plate 2
Also by corresponding each convex block B electrically to the driving circuit 62 of the second substrate 60.It is to drive electricity in the schema of this embodiment
Road 62 is that the aspect of separate line is painted, and so in practice, driving circuit 62 is also possible to a circuit by integration, and with not
Same contact electrically couples each micro element.
By repeating the above steps, remaining micro element 52b, 52c are sequentially transferred to the second substrate on first substrate 50
60, and the driving circuit 62 being electrically connected in the second substrate 60.In the present embodiment, micro element 52a, 52b, 52c is micro-
Type light emitting diode, can driving signal provided by the driving circuit 62 according to the second substrate 60 shine and produce miniature hair
Optical diode display panel.
In transfer process, usually must all it be heated in pickup and engagement, and thermal energy usually can be concentrated in transfer member 22,
And the influence that the deformation that transfer member 22 is generated by thermal expansion generates the relative position of transfer member 22 can compared with substrate 20 because
It influences to come caused by thermal expansion big.In one embodiment, the thermal expansion of the thermal expansion coefficient of each micro element and transfer member 22
Less than one default threshold value of the difference of coefficient, in the present embodiment, substrate 20 and first substrate 50 be identical material (such as
It is constituted for sapphire substrate sapphire), and transfer member 22 and micro element 52 are identical material (GaN epitaxial
Layer it) constitutes.In one embodiment, the thermal expansion coefficient of micro element and the difference of the thermal expansion coefficient of transfer member 22 are little
In the 10 of the thermal expansion coefficient of micro element.Whereby, so that transfer member 22 changes on the base plate 20 because of thermal expansion
The offset of relative position similar can change the inclined of the relative position on first substrate 50 in micro element 52 because of thermal expansion
Shifting amount.In other words, by that each transfer member 22 can be made in substrate 20 according to the thermal expansion coefficient for properly selecting transfer member 22
On relative position correspond to relative position of the micro element 52 on first substrate 50, to improve transfer micro element 52
Qualification rate.
It is the structural schematic diagram that support plate 3 is shifted according to depicted in further embodiment of this invention referring to Fig. 4, Fig. 4.In Fig. 4
Shown in embodiment, shift the similar structure in transfer support plate 1 above-mentioned of structure of support plate 3, including substrate 30 is set with multiple
The transfer member 32 being placed on substrate 30, correlative detail not repeat to repeat.It is different in, transfer support plate 3 also has adhesion coating
34.The upper surface Su of adhesion coating 34 setting transfer member 32 and substrate 30.Adhesion coating 34 can be passes through painting in semiconductor preparative layer
The mode of cloth (or rotary coating) is arranged, or is also possible to be attached by transfer support plate 3 or attaches associated materials and formed.Herein
Adhesion coating 34 is formed in substrate 30 and transfer member 32 by way of coating in embodiment, and adhesion coating 34 is on the Su of upper surface
Thickness Tb be greater than adhesion coating 34 in the thickness Ta on the second surface S2 of transfer member 32.In addition, thickness Ta is less than each transfer member
32 thickness Tp.The ratio of thickness Tp and thickness Ta is 1.5~15, and 32 thickness Tp of transfer member is too small to be easy sticky phase when picking up
Adjacent micro element, heating effect can bad, reduction process efficiency when if thickness Tp is too big in engagement.In some embodiments
Thickness Tp and thickness Ta is 4.5 microns, 2.5 microns respectively；It or is 10 microns, 2.5~5 microns respectively；Or be 30 microns respectively,
2.5~5 microns.
It is the structural schematic diagram that support plate 4 is shifted according to depicted in yet another embodiment of the invention referring again to Fig. 5, Fig. 5.Turn
The similar structure in transfer support plate 2 above-mentioned of the structure of transfer plate 4, including substrate 40, multiple transfers being set on substrate 40
The adhesion block 442 of part 42 and multiple settings that are separated, each block 442 of adhering are located at the second surface S2 of each transfer member 42,
Correlative detail not repeats to repeat.It is different in, the second surface S2 for shifting the transfer member 42 of support plate 4 forms fluted g.It is viscous
Block 442 be respectively arranged in groove g.Whereby, adhesion block 442 is able to more firm be connected with corresponding transfer member 42.
Is described referring to as Fig. 3 B is related to crystal grain support plate, those skilled in the art through it is detailed read this specification after when being appreciated that
Embodiment described in Fig. 4 and Fig. 5 can also be applied to crystal grain support plate above-mentioned, and correlative detail is repeated no more in this.
In summary, the present invention provides a kind of transfer support plates and crystal grain support plate.It shifts support plate and crystal grain support plate has
There is similar structure.Support plate is shifted to turn the micro element (being especially applied to micro-led) on first substrate
Move to the second substrate.To shift for support plate, the thermal expansion coefficient of the substrate of support plate and multiple transfer members of transfer support plate are shifted
Thermal expansion coefficient it is not identical, that is to say, that be to be constituted with different materials；Moreover, the thermal expansion coefficient of these transfer members and these
Difference of the difference of the thermal expansion coefficient of micro element less than the thermal expansion coefficient of a substrate and the thermal expansion coefficient of transfer member.By
It is usually to be heated simultaneously with first substrate in transfer support plate, therefore, when shifting support plate expanded by heating, first substrate is also simultaneously
Expanded by heating.And through the invention provided by shift support plate, shift support plate on micro-structure be able to accurately with first substrate
On micro element contraposition, thus make micro element smoothly and be accurately removed from first substrate.On the other hand, crystal grain support plate
It can be described as the transfer support plate for being temporarily fixed with micro element, by above-mentioned structure, the micro element on crystal grain support plate is able to
It accurately aligns with the second substrate, so that each micro element be made accurately to be set to the junction in the second substrate, improves whole
The manufacture qualification rate of body.
Although the present invention is disclosed as above with embodiment above-mentioned, however, it is not to limit the invention.This hair is not being departed from
In bright spirit and scope, carried out by change and retouch, belong to scope of patent protection of the invention.It is defined about the present invention
Protection scope please refers to appended claims.
Claims (17)
1. a kind of transfer support plate, to shift multiple micro elements on a first substrate to a second substrate, which is characterized in that
The transfer support plate includes:
One substrate has a upper surface；And
Multiple transfer members, are set to the upper surface of the substrate, and each transfer member has an opposite first surface and one second
Surface, those transfer members contact the substrate respectively with those first surfaces；
Wherein, the thermal expansion coefficient of the substrate and the thermal expansion coefficient of those transfer members be not identical, the thermal expansion of those transfer members
The difference of the thermal expansion coefficient of coefficient and those micro elements is less than the thermal expansion coefficient of the substrate and the heat of each transfer member
The difference of the coefficient of expansion.
2. transfer support plate according to claim 1, which is characterized in that the thermal conductivity coefficient of each transfer member is greater than the substrate
Twice of thermal conductivity coefficient, less than five times of thermal conductivity coefficient of the substrate.
3. transfer support plate according to claim 1, which is characterized in that the substrate is sapphire substrate, the material of the transfer member
Material includes gallium nitride.
4. transfer support plate according to claim 1, which is characterized in that the thermal expansion coefficient of each transfer member and the substrate
Thermal expansion coefficient difference no more than the substrate thermal expansion coefficient 50 percent and be not more than the substrate thermal expansion
The 10 of coefficient.
5. transfer support plate according to claim 1, which is characterized in that it further include multiple adhesion blocks for separating setting, it is each
The adhesion block is located at the second surface of one of those transfer members.
6. transfer support plate according to claim 5, which is characterized in that each adhesion block is located at the corresponding second surface
Periphery within.
7. transfer support plate according to claim 6, which is characterized in that it is recessed that the second surface of each transfer member forms one
Slot, those adhesion blocks are located in those grooves of those transfer members.
8. transfer support plate according to claim 1, which is characterized in that further include an adhesion coating, which covers those
The upper surface of transfer member and the substrate.
9. transfer support plate according to claim 8, which is characterized in that the adhesion coating is greater than in the thickness on the first surface
The adhesion coating is in the thickness on the second surface of each transfer member.
10. a kind of crystal grain support plate characterized by comprising
One substrate has a upper surface；
Multiple transfer members, are set to the upper surface of the substrate, and each transfer member has an opposite first surface and one the
Two surfaces, those transfer members contact the substrate respectively with those first surfaces；
One adhesion coating is set on those second surfaces of those transfer members；And
Multiple micro elements are located on the adhesion coating, and each micro element is bonded to those corresponding turns by the adhesion coating
Move one of part；
Wherein, the thermal expansion coefficient of the substrate and the thermal expansion coefficient of those transfer members be not identical, the thermal expansion of those transfer members
The difference of the thermal expansion coefficient of coefficient and those micro elements is less than a default threshold value.
11. crystal grain support plate according to claim 10, which is characterized in that the thermal conductivity coefficient of those transfer members is greater than the substrate
Twice of thermal conductivity coefficient, less than five times of the thermal conductivity coefficient of the substrate.
12. crystal grain support plate according to claim 10, which is characterized in that the substrate is sapphire substrate, those transfer members
Material include gallium nitride, those micro elements be micro-led and those micro elements material include gallium nitride.
13. crystal grain support plate according to claim 10, which is characterized in that the thermal expansion coefficient of those transfer members and the substrate
Thermal expansion coefficient difference no more than the substrate thermal expansion coefficient 50 percent and be not more than the substrate thermal expansion
The 10 of coefficient.
14. crystal grain support plate according to claim 10, which is characterized in that the adhesion coating has multiple adhesions for separating setting
Block, each adhesion block are located at the second surface of one of those transfer members.
15. crystal grain support plate according to claim 14, which is characterized in that the second surface of each transfer member forms one
Groove, each adhesion block are located in the groove of one of those transfer members.
16. crystal grain support plate according to claim 10, which is characterized in that the adhesion coating cover the upper surface of the substrate with
Those transfer members.
17. crystal grain support plate according to claim 16, which is characterized in that the adhesion coating is big in the thickness on the first surface
In the adhesion coating in the thickness on the second surface of each transfer member.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810348132.1A CN110391165B (en) | 2018-04-18 | 2018-04-18 | Transfer carrier and die carrier |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810348132.1A CN110391165B (en) | 2018-04-18 | 2018-04-18 | Transfer carrier and die carrier |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN110391165A true CN110391165A (en) | 2019-10-29 |
| CN110391165B CN110391165B (en) | 2021-09-14 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810348132.1A Active CN110391165B (en) | 2018-04-18 | 2018-04-18 | Transfer carrier and die carrier |
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| WO2021109010A1 (en) * | 2019-12-03 | 2021-06-10 | 重庆康佳光电技术研究院有限公司 | Mass transfer method and system for semiconductor device |
| CN112967970A (en) * | 2020-05-21 | 2021-06-15 | 重庆康佳光电技术研究院有限公司 | Transfer method and display back plate |
| CN113224218A (en) * | 2020-12-30 | 2021-08-06 | 湖北长江新型显示产业创新中心有限公司 | Display panel, manufacturing method and display device |
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| CN113224218A (en) * | 2020-12-30 | 2021-08-06 | 湖北长江新型显示产业创新中心有限公司 | Display panel, manufacturing method and display device |
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| CN110391165B (en) | 2021-09-14 |
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