WO2021109010A1

WO2021109010A1 - Mass transfer method and system for semiconductor device

Info

Publication number: WO2021109010A1
Application number: PCT/CN2019/122819
Authority: WO
Inventors: 汪楷伦; 许时渊; 洪温振
Original assignee: 重庆康佳光电技术研究院有限公司
Priority date: 2019-12-03
Filing date: 2019-12-03
Publication date: 2021-06-10
Also published as: CN113228243A

Abstract

A mass transfer method and system for a semiconductor device. The method comprises: providing a semiconductor device (200) formed on a native substrate (100); providing a transit substrate (10) coated with an adhesion layer (30), the viscidity of the adhesion layer (30) being in direct proportion to the temperature; pasting the side of the semiconductor device (200) distant from the native substrate (100) to the adhesion layer (30), so as to paste the semiconductor device (200) to the adhesion layer (30); peeling the native substrate (100) from the semiconductor device (200), and increasing the temperature of the adhesion layer (30) in the peeling process; using a transfer device (20) to capture the semiconductor device (200), so that the semiconductor device (200) is peeled from the transit substrate (10); and using the transfer device (20) to transfer the semiconductor device (200) to a target substrate (300), so that the semiconductor device (200) is installed on the target substrate (300).

Description

Method and system for mass transfer of semiconductor device

Technical field

The present invention relates to a semiconductor device transfer technology, in particular to a method and system for mass transfer of semiconductor devices.

Background technique

Micro-LED, that is, the miniaturization and matrix technology of light-emitting diodes, has good stability, longevity, and advantages in operating temperature. Miniature light-emitting diodes also inherit the advantages of light-emitting diodes such as low power consumption, high color saturation, fast response speed, and strong contrast. At the same time, miniature light-emitting diodes have the advantages of higher brightness and lower power consumption.

Therefore, miniature light-emitting diodes will have great application prospects in the future, such as miniature light-emitting diode display screens. However, there is a certain degree of difficulty in the manufacture of miniature light-emitting diode displays. The difficulty lies in the bottleneck of mass transfer technology that still needs to be broken through. Mass transfer refers to the transfer of thousands of miniature light-emitting diode chips to the backplane of the display screen to achieve the function of light emission. The difficulty of mass transfer technology is how to increase the conversion yield to 99.9999%, and the accuracy of each miniature light-emitting diode must be controlled within plus or minus 0.5 microns. In the current technology that uses micro-transfer printing to achieve mass transfer, in the process of thermal assistance, the temperature control is easily disturbed by temperature energy, resulting in poor yield during the transfer process.

technical problem

The present invention provides a method and system for mass transfer, which improves the effect of mass transfer.

Technical solutions

In a first aspect, an embodiment of the present invention provides a mass transfer method, the method includes: providing a semiconductor device formed on a native substrate;

Provide a transit substrate coated with an adhesive layer, the viscosity of the adhesive layer is proportional to the temperature;

Pasting the side of the semiconductor device away from the native substrate with the adhesive layer to paste the semiconductor device on the adhesive layer;

Peeling the native substrate from the semiconductor device, and the temperature of the adhesive layer increases during the peeling process;

Grab the semiconductor device with a transfer device to peel the semiconductor device from the transfer substrate;

The semiconductor device is transferred to the target substrate using a transfer device to mount the semiconductor device on the target substrate.

In a second aspect, an embodiment of the present invention provides a mass transfer system, and the mass transfer system includes:

A transit substrate coated with an adhesive layer, the viscosity of the adhesive layer is proportional to the temperature, and the transit substrate is pasted on the side of the semiconductor device away from the original substrate through the adhesive layer;

A peeling device for peeling the native substrate from the semiconductor device, and during the peeling process, the temperature of the adhesive layer increases; and

The transfer device is used to grab the semiconductor device to peel off the semiconductor device from the transfer substrate, and transfer the semiconductor device to a target substrate, so as to mount the semiconductor device on the target substrate.

Beneficial effect

The above mass transfer method and system uses an adhesive layer whose viscosity is proportional to the temperature. When the original substrate is peeled off, the temperature of the adhesive layer is increased, thereby increasing the viscosity of the adhesive layer, and reducing the bias of the semiconductor device due to the peeling of the original substrate. Therefore, the reliability of the semiconductor device in mass transfer is improved, and the yield rate is improved.

Description of the drawings

Fig. 1 is a schematic diagram of a mass transfer system provided by the first embodiment of the present invention.

Fig. 2 is a schematic diagram of a mass transfer system provided by a second embodiment of the present invention.

Fig. 3 is a schematic diagram of a mass transfer system provided by a third embodiment of the present invention.

FIG. 4 is a schematic flow chart of the method for mass transfer provided by the first embodiment of the present invention.

FIG. 5 is a schematic flowchart of a method for mass transfer according to a second embodiment of the present invention.

FIG. 6 is a schematic flowchart of a method for mass transfer according to a third embodiment of the present invention.

FIG. 7 is a schematic diagram of a sub-flow of the method for mass transfer according to an embodiment of the present invention.

FIG. 8 is a schematic diagram of a sub-flow of the method for mass transfer according to an embodiment of the present invention.

FIG. 9 is a schematic diagram of a process of mass transfer of a semiconductor device provided by the first embodiment of the present invention.

FIG. 10 is a schematic diagram of a process of mass transfer of a semiconductor device provided by the second embodiment of the present invention.

FIG. 11 is a schematic diagram of a process of mass transfer of a semiconductor device provided by the third embodiment of the present invention.

The best mode of the present invention

In order to have a clearer and more accurate understanding of the content of the present invention, it will now be described in detail with reference to the accompanying drawings. The drawings of the specification show examples of embodiments of the present invention, in which the same reference numerals denote the same elements. It can be understood that the scale shown in the drawings in the specification is not the scale of the actual implementation of the present invention, and is only for illustrative purposes, and is not drawn according to the original size.

Please refer to FIG. 1, which is a schematic diagram of a mass transfer system 99 according to the first embodiment of the present invention. The mass transfer system 99 is used to transfer the semiconductor device 200 formed on the original substrate 100 to the target substrate 300 and mount the semiconductor device 200 on a corresponding position of the target substrate 300. Specifically, the semiconductor device 200 includes a number of micro-LEDs 201. The electrode 2010 of the light emitting diode 201 is away from the side of the native substrate 100. The target substrate 300 may be a backplane of a display assembly (not shown). The display component can be a display, a television, and other electronic products with display functions.

Please refer to FIG. 9 in combination. The mass transfer system 99 includes a transfer substrate 10, a transfer device 20, and a peeling device 40. Wherein, the transfer substrate 10 is provided with an adhesive layer 30. The viscosity of the adhesive layer 30 is proportional to the temperature. That is, the higher the temperature of the adhesive layer 30, the stronger the viscosity of the adhesive layer 30; the lower the temperature of the adhesive layer 30, the weaker the adhesive layer 30 is. The adhesive layer 30 is made of cold solution glue or room temperature glue. In this embodiment, the stripping device 40 is a laser device for emitting laser light. The transfer device 20 adopts a paste and grab method to transfer. Specifically, the transfer device 20 uses polydimethylsiloxane (PDMS) for transfer. In this embodiment, the transfer device 20 includes a main body 21 and a protrusion 22 provided on the main body 21. The position of the bump 22 on the main body 21 is set according to the position of the target substrate 300 where the semiconductor device 200 needs to be mounted. Specifically, the bump 22 corresponds to the position where the micro light emitting diode 201 needs to be installed on the target substrate 300 in a one-to-one correspondence. Among them, the convex post 22 is made of PDMS, which is sticky. In some other feasible embodiments, the transfer device 20 can also adopt a viscous material for sticking and grabbing.

The specific operation process of the mass transfer system 99 in transferring the semiconductor device 200 to the target substrate 300 is as follows.

In the first step, the adhesive layer 30 of the intermediate substrate 10 is attached to the side of the semiconductor device 200 away from the original substrate 100, that is, the intermediate substrate 10 is attached to the electrode 2010 of the semiconductor device 200 through the adhesive layer 30.

In the second step, the original substrate 100 is peeled off by the peeling device 40. Specifically, the peeling device 40 emits laser light to the original substrate 100 to perform laser peeling on the original substrate 100. During the peeling process, a certain amount of energy is generated by the laser light, so that the temperature of the adhesive layer 30 increases. That is, during the peeling process of the original substrate 100, the temperature of the adhesive layer 30 increases, so that the adhesion of the adhesive layer 30 increases, which can prevent the position of the semiconductor device 200 from shifting during the peeling process. In some feasible embodiments, the peeling device 40 may also adopt other methods, which will be described below.

In the third step, the transfer device 20 is used to grab the semiconductor device 200 to peel the semiconductor device 200 from the transfer substrate 10 and transfer the semiconductor device 200 to the target substrate 300. Specifically, first, the bump 22 of the transfer device 20 is directed toward the semiconductor device 200 and moved to the semiconductor device 200, so that the bump 22 is attached to the semiconductor device 200, that is, the bump 22 is attached to the electrode of the micro light emitting diode 201 On 2010. At the same time, the viscosity between the transfer device 20 and the semiconductor device 200 is maintained higher than the viscosity between the transfer substrate 10 and the semiconductor device 200. Next, the boss 22 of the moving device 20 is controlled to move to the side away from the transfer substrate 10, so that the transfer substrate 10 is peeled off. Since the operation of the peeling device 40 is finished, the temperature of the adhesive layer 30 is reduced, and the viscosity is also reduced, which further reduces the difficulty of peeling the intermediate substrate 10 and makes it easier to peel the intermediate substrate 10.

The fourth step is to transfer the semiconductor device 200 to the target substrate 300 by using the transfer device 20 to mount the semiconductor device 200 on the target substrate 300.

In the above-mentioned embodiment, since the intermediate substrate 10 is provided with the adhesive layer 30, and the viscosity of the adhesive layer 30 is proportional to the temperature, when the original substrate 100 is peeled off, the adhesive layer 30 is increased in viscosity, so that the semiconductor device The viscosity between 200 and the transfer substrate 10 is greater, which prevents the position of the semiconductor device 200 from shifting during the process of peeling off the original substrate 100, and provides a guarantee for subsequent transfer.

Please refer to FIG. 2 and FIG. 10 in combination, which are schematic diagrams of the mass transfer system 999 provided by the second embodiment of the present invention. The difference between the mass transfer system 999 of the second embodiment and the mass transfer system 99 of the first embodiment is that the mass transfer system 999 further includes a heating device 50. Specifically, in order to further enhance the reliable peeling of the original substrate 100, when the original substrate 100 is peeled off, the adhesive layer 30 is heated by the heating device 50, so as to improve the adhesion of the adhesive layer 30. Specifically, the heating device 50 heats toward the side of the transfer substrate 10 away from the adhesive layer 30, so as to increase the temperature of the adhesive layer 30 and further increase the viscosity of the adhesive layer 30. Please refer to FIG. 9 for other processes of the mass transfer system 999 transferring the semiconductor device 200 to the target substrate 300, which are basically the same as the mass transfer system 99, and will not be repeated here.

Please refer to FIG. 3 and FIG. 11 in combination. FIG. 3 is a schematic diagram of a mass transfer system 9999 according to a third embodiment of the present invention. The difference between the mass transfer system 9999 of the third embodiment and the mass transfer system 999 of the second embodiment is that the mass transfer system 9999 further includes a cooling device 60. Specifically, in order to further quickly peel off the transfer substrate 10 reliably, when the transfer substrate 10 is peeled off, the adhesive layer 30 is rapidly cooled by the cooling device 60 to reduce the viscosity of the adhesive layer 30. Specifically, the cooling device 60 cools down toward the side of the transfer substrate 10 away from the adhesive layer 30, so as to reduce the temperature of the adhesive layer 30 and further reduce the viscosity of the adhesive layer 30. For other processes of the mass transfer system 9999 transferring the semiconductor device 200 to the target substrate 300, please refer to FIG. 10, which is basically the same as the mass transfer system 999, and will not be repeated here.

In some feasible embodiments, the mass transfer system may also include a heating device 50 and a cooling device 60 at the same time.

Please refer to FIG. 4 and FIG. 9, which are schematic flowcharts of the mass transfer method provided by the first embodiment of the present invention. The mass transfer method is used to transfer the semiconductor device 200 formed on the native substrate 100 to the target substrate 300 and mount the semiconductor device 200 on the corresponding position of the target substrate 300. Specifically, the semiconductor device 200 includes a number of micro-LEDs 201. The electrode 2010 of the light emitting diode 201 is away from the side of the native substrate 100. The target substrate 300 may be a backplane of a display assembly (not shown). The display component can be a display, a television, and other electronic products with display functions. Specifically, the mass transfer method includes the following steps.

In step S101, a semiconductor device 200 formed on a native substrate 100 is provided.

In step S103, the transit substrate 10 coated with the adhesive layer 30 is provided. Among them, the viscosity of the adhesive layer 30 is proportional to the temperature. That is, the higher the temperature of the adhesive layer 30, the stronger the viscosity of the adhesive layer 30; the lower the temperature of the adhesive layer 30, the weaker the adhesive layer 30 is. The adhesive layer 30 is made of cold solution glue or room temperature glue.

In step S105, the side of the semiconductor device away from the native substrate 100 is pasted with the adhesive layer 30 to paste the semiconductor device 200 on the adhesive layer 30. As shown in FIG. 9, in this method, the adhesive layer 30 is attached to the electrode 2010 of the semiconductor device 200.

In step S107, the native substrate is peeled from the semiconductor device 200, and the temperature of the adhesive layer 30 increases during the peeling process. Specifically, the peeling device 40 emits laser light to the original substrate 100 to perform laser peeling on the original substrate 100. During the peeling process, a certain amount of energy is generated by the laser light, so that the temperature of the adhesive layer 30 increases. That is, during the peeling process of the original substrate 100, the temperature of the adhesive layer 30 increases, so that the adhesion of the adhesive layer 30 increases, which can prevent the position of the semiconductor device 200 from shifting during the peeling process.

In step S109, the transfer device 20 is used to grab the semiconductor device 200 so that the semiconductor device 200 is peeled off from the transfer substrate 10.

Step S111, using the transfer device 20 to transfer the semiconductor device 200 to the target substrate 300, so as to mount the semiconductor device 200 on the target substrate 300.

As shown in FIG. 7, in some feasible embodiments, step S109 specifically includes the following steps.

Step S1091, using the transfer device 20 to stick to the side of the semiconductor device 200 away from the transfer substrate 10, the viscosity between the transfer device 20 and the semiconductor device 200 is greater than the viscosity between the transfer substrate 10 and the semiconductor device;

In step S1093, the transfer device 20 is moved to separate the semiconductor device 200 from the transfer substrate 10.

As shown in FIG. 8, in some feasible embodiments, step S109 specifically includes the following steps.

Step S1092, providing a transfer device with a plurality of protrusions; the transfer device 20 includes a main body 21 and a protrusion 22 provided on the main body 21. The position of the bump 22 on the main body 21 is set according to the position of the target substrate 300 where the semiconductor device 200 needs to be mounted. Specifically, the bump 22 corresponds to the position where the micro light emitting diode 201 needs to be installed on the target substrate 300 in a one-to-one correspondence. Among them, the convex post 22 is made of PDMS, which is sticky.

Step S1094, aligning the plurality of protrusions 22 with the corresponding light emitting diodes 201 so that the protrusions 22 are pasted to the corresponding light emitting diodes 201, and the viscosity between the protrusions 22 and the light emitting diodes 201 is higher than that of the current adhesive layer 30.

In step S1096, the transfer device 20 is moved to peel off the light-emitting diode 201 from the transfer substrate 10.

Please refer to FIG. 5 and FIG. 10, which are the mass transfer method provided by the second embodiment of the present invention. The difference between the mass transfer method provided by the second embodiment and the mass transfer method of the first embodiment is that the mass transfer method provided by the second embodiment further includes step S106 before step S107: heating the adhesive layer 30 with a heater . Specifically, the heating device 50 heats toward the side of the transfer substrate 10 away from the adhesive layer 30, so as to increase the temperature of the adhesive layer 30 and further increase the viscosity of the adhesive layer 30. Thereby, it is possible to enhance the reliable peeling of the native substrate 100.

Please refer to FIG. 6 and FIG. 11, which are the mass transfer method provided by the third embodiment of the present invention. The difference between the mass transfer method provided by the third embodiment and the mass transfer method of the second embodiment is that the mass transfer method provided by the third embodiment uses the transfer device 20 to grab the semiconductor device 200 and transfer the semiconductor device 200 from the transfer device. Before the substrate 10 is peeled off, the method further includes step S108: cooling the adhesive layer 30. Specifically, the cooling device 60 cools down toward the side of the transfer substrate 10 away from the adhesive layer 30, so as to reduce the temperature of the adhesive layer 30 and further reduce the viscosity of the adhesive layer 30. In this way, the adhesive layer 30 is rapidly cooled by the cooling device 60, thereby rapidly reducing the viscosity of the adhesive layer 30, thereby speeding up the peeling of the semiconductor device 200 from the intermediate substrate 10.

Obviously, those skilled in the art can make various changes and modifications to the present invention without departing from the spirit and scope of the present invention. In this way, if these modifications and variations of the present invention fall within the scope of the claims of the present invention and equivalent technologies, the present invention is also intended to include these modifications and variations.

The above-listed are only preferred embodiments of the present invention, which of course cannot be used to limit the scope of rights of the present invention. Therefore, equivalent changes made according to the claims of the present invention still fall within the scope of the present invention.

To

Claims

A method for mass transfer of a semiconductor device, characterized in that the method includes:

Provide semiconductor devices formed on native substrates;

Provide a transit substrate coated with an adhesive layer, the viscosity of the adhesive layer is proportional to the temperature;

Pasting the side of the semiconductor device away from the native substrate with the adhesive layer to paste the semiconductor device on the adhesive layer;

Peeling the native substrate from the semiconductor device, and the temperature of the adhesive layer increases during the peeling process;

Grab the semiconductor device with a transfer device to peel the semiconductor device from the transfer substrate;

The semiconductor device is transferred to the target substrate using a transfer device to mount the semiconductor device on the target substrate.
8. The mass transfer method of claim 1, wherein the adhesive layer is a cold glue.
5. The mass transfer method of claim 1, wherein before the semiconductor device is grabbed by a transfer device to peel the semiconductor device from the transfer substrate, the mass transfer method further comprises:

Cool the adhesive layer.
8. The mass transfer method of claim 1, wherein peeling the native substrate from the semiconductor device specifically comprises:

Laser is performed on the semiconductor device to peel off the native substrate.
The mass transfer method of claim 4, wherein the temperature increase of the adhesive layer during the peeling process specifically comprises:

During the peeling process, a heater is used to heat the adhesive layer to increase the temperature of the adhesive layer.
5. The mass transfer method of claim 1, wherein using a transfer device to grab the semiconductor device to peel off the semiconductor device from the transfer substrate specifically comprises:

Pasting on the side of the semiconductor device away from the transfer substrate using a transfer device, the viscosity between the transfer device and the semiconductor device is greater than the viscosity between the transfer substrate and the semiconductor device; and

The transfer device is moved to separate the semiconductor device from the transit substrate.
5. The mass transfer method of claim 1, wherein the semiconductor device includes a plurality of micro light emitting diodes.

8. The mass transfer method of claim 7, wherein using a transfer device to grab the semiconductor device to peel the semiconductor device from the transfer substrate specifically comprises:

Provide a transfer device with several bosses;

Aligning the plurality of protrusions with the corresponding light-emitting diodes so that the protrusions are pasted to the corresponding light-emitting diodes, and the viscosity between the protrusions and the light-emitting diodes is higher than that of the current adhesive layer; and

The transfer device is moved to peel the light-emitting diode from the transfer substrate.
7. The mass transfer method of claim 7, wherein the plurality of protrusions correspond to the positions where the light emitting diodes are mounted on the target substrate in a one-to-one correspondence.

10. The mass transfer method of claim 6, wherein the plurality of micro light emitting diodes are arranged in a matrix.

11. A mass transfer system for semiconductor devices is used to transfer a semiconductor device formed on a native substrate to a target substrate, wherein the mass transfer system includes:

A transit substrate coated with an adhesive layer, the viscosity of the adhesive layer is proportional to the temperature, and the transit substrate is pasted on the side of the semiconductor device away from the original substrate through the adhesive layer;

A peeling device for peeling the native substrate from the semiconductor device, and during the peeling process, the temperature of the adhesive layer increases; and

The transfer device is used to grab the semiconductor device to peel off the semiconductor device from the transfer substrate, and transfer the semiconductor device to a target substrate, so as to mount the semiconductor device on the target substrate.

12. The mass transfer system of claim 11, wherein the stripping device is a laser device.

13. The mass transfer system of claim 11, wherein the mass transfer system further comprises a heating device, and the heating device heats the adhesive layer when the native substrate is peeled off.

14. The mass transfer system of claim 13, wherein the heating device heats the side of the transfer substrate away from the semiconductor device.

15. The mass transfer system of claim 13, wherein the heating device stops heating when the transfer substrate is peeled off.

16. The mass transfer system of claim 11, wherein the transfer device and the semiconductor device are pasted on a side away from the transfer substrate, and the transfer device and the semiconductor device are The viscosity is greater than the viscosity between the transfer substrate and the semiconductor device.

17. The mass transfer system of claim 11, wherein the semiconductor device comprises a plurality of light emitting diodes.

18. The mass transfer system of claim 17, wherein the transfer device is provided with a plurality of protrusions, and the plurality of protrusions are pasted in a one-to-one correspondence with the light-emitting diodes.

19. The mass transfer system of claim 17, wherein the protrusions respectively correspond to the positions where the light-emitting diodes are mounted on the target substrate in a one-to-one correspondence.

20. The mass transfer system according to claim 17, wherein the mass transfer system further comprises a cooling device, the cooling device is used for the transfer device to peel off the transfer substrate to the adhesive Layer cooling.