TWI790406B - Light emitting device, light emitting module, method of manufacturing light emitting device and light emitting module - Google Patents

Light emitting device, light emitting module, method of manufacturing light emitting device and light emitting module Download PDF

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TWI790406B
TWI790406B TW108139531A TW108139531A TWI790406B TW I790406 B TWI790406 B TW I790406B TW 108139531 A TW108139531 A TW 108139531A TW 108139531 A TW108139531 A TW 108139531A TW I790406 B TWI790406 B TW I790406B
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light
electrode
mentioned
pair
emitting device
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TW202034544A (en
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大黒真一
橋本啓
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日商日亞化學工業股份有限公司
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Abstract

The light emitting device includes: a light emitting element, a covering member, a pair of electrode layers, and a pair of electrode terminals. The light emitting element has an electrode-formed surface on which a pair of electrode posts is formed. The covering member covers an electrode-formed surface of the light emitting element while forming an exposure portion of each of the electrode posts which is exposed from the covering member. The pair of electrode layers is provided on a surface of the covering member and electrically connected to the exposure portions of the electrode posts. The pair of electrode terminals is electrically connected to the electrode layers, and provided on the surface of the covering member. The pair of the electrode terminals is thicker than the electrode layer, and is disposed at an interval larger than an interval between a pair of the electrode posts.

Description

發光裝置、發光模組、發光裝置及發光模組之製造方法Light-emitting device, light-emitting module, method for manufacturing light-emitting device and light-emitting module

本發明係關於一種發光裝置、安裝該發光裝置而成之發光模組、發光裝置及發光模組之製造方法。The present invention relates to a light-emitting device, a light-emitting module assembled with the light-emitting device, a method for manufacturing the light-emitting device and the light-emitting module.

已開發有一種發光裝置，其係藉由被覆構件被覆設置有一對電極柱之發光元件之電極面，且於露出於被覆構件之電極柱連接有薄膜之電極層(參照專利文獻1)。 [先前技術文獻] [專利文獻]A light-emitting device has been developed in which the electrode surface of a light-emitting element provided with a pair of electrode posts is covered with a covering member, and a thin-film electrode layer is connected to the electrode posts exposed on the covering member (see Patent Document 1). [Prior Art Literature] [Patent Document]

[專利文獻1]日本專利特開2012-124443號公報[Patent Document 1] Japanese Patent Laid-Open No. 2012-124443

[發明所欲解決之問題][Problem to be solved by the invention]

以上之發光裝置係藉由電極層進行外部連接，但由於電極層極薄，故而外部連接極其困難且耗費工夫，進而難以穩定並確實地進行連接。The above light-emitting devices are externally connected through the electrode layer, but because the electrode layer is extremely thin, the external connection is extremely difficult and time-consuming, and it is difficult to perform stable and reliable connection.

本發明係為了消除以上缺點而開發者，本發明之目的在於提供一種可實現小型化並且確實並穩定地進行外部連接之發光裝置及其製造方法。 [解決問題之技術手段]The present invention was developed in order to eliminate the above disadvantages, and an object of the present invention is to provide a light emitting device capable of miniaturization and reliable and stable external connection and a manufacturing method thereof. [Technical means to solve the problem]

本發明之實施形態之發光裝置具備：發光元件，其係於同一面側設置一對電極柱而成；被覆構件，其係覆蓋發光元件且供設置電極柱之露出部而成；一對電極層，其等係設置於被覆構件之表面並電性連接於電極柱之露出部而成；及一對電極端子，其等係電性連接於電極層且設置於被覆構件之表面而成。一對電極端子較電極層厚且以較一對電極柱之間隔大之間隔配置。The light-emitting device according to the embodiment of the present invention includes: a light-emitting element, which is formed by providing a pair of electrode posts on the same surface; , which are arranged on the surface of the covered member and electrically connected to the exposed part of the electrode post; and a pair of electrode terminals, which are electrically connected to the electrode layer and arranged on the surface of the covered member. The pair of electrode terminals is thicker than the electrode layer and arranged at a larger interval than the pair of electrode posts.

本發明之實施形態之發光模組具備：以上之發光裝置；及透光性之導光板，其係於成為向外部放射光之發光面之第1主面之相反側的第2主面設置凹部而成；且於導光板之凹部配置有發光裝置。A light-emitting module according to an embodiment of the present invention includes: the above-mentioned light-emitting device; and a light-transmitting light guide plate in which a concave portion is provided on the second main surface opposite to the first main surface that becomes the light-emitting surface that radiates light to the outside. and a light-emitting device is arranged in the concave part of the light guide plate.

本發明之實施形態之發光裝置之製造方法包括如下步驟：準備中間體，該中間體係由被覆構件覆蓋在同一面側具備一對電極柱之發光元件且於被覆構件設置電極柱之露出部而成；於被覆構件之表面形成電性連接於中間體之電極柱之露出部的一對電極層；及電極形成步驟，其係將電性連接於一對電極層之一對電極端子設置為較電極層厚且以較一對電極柱之間隔大之間隔設置。The manufacturing method of the light-emitting device according to the embodiment of the present invention includes the following steps: preparing an intermediate body. The intermediate system is formed by covering a light-emitting element with a pair of electrode posts on the same side with a covering member and providing the exposed part of the electrode posts on the covering member. ; forming a pair of electrode layers electrically connected to the exposed portion of the electrode post of the intermediate body on the surface of the covered member; The layer is thick and arranged at an interval larger than that between a pair of electrode columns.

進而，本發明之實施形態之發光模組之製造方法包括如下步驟：準備藉由以上方法製造而成之發光裝置、以及具備成為發光面之第1主面、及位於與第1主面相反之側且設置凹部而成之第2主面的導光板；將發光裝置固著於凹部；於導光板之第2主面，設置供埋設發光裝置之光反射性構件；以及對光反射性構件進行研磨使電極端子露出，並於該露出之電極端子之表面形成導電膜。 [發明之效果]Furthermore, the manufacturing method of the light-emitting module according to the embodiment of the present invention includes the steps of: preparing a light-emitting device manufactured by the above method, and having a first main surface serving as a light-emitting surface, and a surface located opposite to the first main surface. A light guide plate on the second main surface with a concave portion on the side; fix the light-emitting device to the concave portion; set a light-reflective member for embedding the light-emitting device on the second main surface of the light guide plate; and carry out the light-reflective member. Grinding exposes the electrode terminals, and forms a conductive film on the surface of the exposed electrode terminals. [Effect of Invention]

本發明之發光裝置及藉由本發明之方法製造之發光裝置具有可實現小型化並且確實並穩定地進行外部連接之特徵。The light-emitting device of the present invention and the light-emitting device manufactured by the method of the present invention have the characteristics of realizing miniaturization and reliable and stable external connection.

本發明之發光模組及其製造方法具有如下特徵：可使發光裝置小型化，並且將其安裝於導光板之固定位置而確實並穩定地進行外部連接。The light-emitting module and its manufacturing method of the present invention have the following characteristics: the light-emitting device can be miniaturized, and it can be installed at a fixed position on the light guide plate to ensure reliable and stable external connection.

以下，基於圖式對本發明詳細地進行說明。再者，於以下說明中，視需要使用表示特定方向或位置之用語(例如「上」、「下」、及包含該等用語之其他用語)，但該等用語之使用係為了易於參照圖式理解發明，並非由該等用語之含義限制本發明之技術範圍。又，複數個圖式所表示之同一符號之部分表示同一或同等之部分或構件。Hereinafter, the present invention will be described in detail based on the drawings. Furthermore, in the following description, terms indicating specific directions or positions (such as "upper", "lower", and other terms including these terms) are used as needed, but these terms are used for ease of reference to the drawings. Understanding the invention does not limit the technical scope of the present invention by the meaning of these terms. In addition, the parts represented by the same symbol in a plurality of drawings represent the same or equivalent parts or components.

進而，以下所示之實施形態係表示本發明之技術思想之具體例者，並非將本發明限定於以下者。又，除非有特定記載，否則以下所記載之構成零件之尺寸、材質、形狀、其相對配置等並非將本發明之範圍僅限定於此之主旨，而是意欲例示本發明之範圍者。又，於一實施形態、實施例中說明之內容亦可應用於其他實施形態、實施例。又，有時為了使說明明確，而將圖式所表示之構件之大小或位置關係等誇大。Furthermore, the embodiment shown below shows the specific example of the technical thought of this invention, and does not limit this invention to the following. In addition, unless otherwise specified, the dimensions, materials, shapes, and relative arrangements of components described below are not intended to limit the scope of the present invention, but are intended to illustrate the scope of the present invention. Moreover, the content demonstrated in one embodiment and an Example is also applicable to another embodiment and an Example. In addition, in order to clarify the description, the size and positional relationship of components shown in the drawings are sometimes exaggerated.

發光裝置具備：發光元件，其係於同一面側設置一對電極柱而成；被覆構件，其係覆蓋設置一對電極柱而成之發光元件之電極面且供設置電極柱之露出部而成；一對電極層，其等係設置於被覆構件之表面並電性連接於電極柱之露出部而成；及一對電極端子，其等係電性連接於電極層且設置於被覆構件之表面而成。一對電極端子較電極層厚且以較一對電極柱之間隔大之間隔配置。 ＜實施形態1＞The light-emitting device includes: a light-emitting element, which is formed by arranging a pair of electrode pillars on the same surface; a covering member, which is formed by covering the electrode surface of the light-emitting element formed by arranging a pair of electrode pillars, and is formed by providing an exposed part of the electrode pillars ; a pair of electrode layers, which are formed on the surface of the covered member and electrically connected to the exposed part of the electrode post; and a pair of electrode terminals, which are electrically connected to the electrode layer and arranged on the surface of the covered member made. The pair of electrode terminals is thicker than the electrode layer and arranged at a larger interval than the pair of electrode posts. ＜Embodiment 1＞

將實施形態1之發光裝置1表示為圖1A之剖視圖、圖1B之自斜下方(圖1A之斜下方)觀察所得之立體圖、及圖1C之自斜上方(圖1A之斜上方)觀察所得之立體圖。發光裝置1具備發光元件2、被覆構件3、透光性構件4、電極層5、及電極端子6。發光元件2具備積層有半導體層之積層構造體2a、及設置於作為積層構造體2a之一面(於圖1A中為下表面)之電極面2b之一對電極柱2c。於圖1A之剖視圖中，發光裝置1向上方放射光。The light-emitting device 1 of Embodiment 1 is shown as a sectional view of FIG. 1A , a perspective view of FIG. 1B observed from obliquely below (obliquely below FIG. 1A ), and a perspective view of FIG. 1C observed obliquely above (obliquely above FIG. 1A ). stereogram. The light emitting device 1 includes a light emitting element 2 , a covering member 3 , a translucent member 4 , an electrode layer 5 , and an electrode terminal 6 . The light-emitting element 2 includes a layered structure 2a on which semiconductor layers are layered, and a pair of electrode posts 2c provided on an electrode surface 2b that is one surface (the lower surface in FIG. 1A ) of the layered structure 2a. In the sectional view of FIG. 1A , the light emitting device 1 emits light upward.

發光元件2具有半導體之積層構造體2a。積層構造體2a包含發光層、以及隔著發光層之n型半導體層及p型半導體層，於電極面2b設置有n側及p側之電極柱2c。作為發光元件2，縱、橫及高度之尺寸並無特別限制，較佳為使用俯視下縱及橫之尺寸為1000 μm以下之積層構造體2a，更佳為縱及橫之尺寸為500 μm以下，進而較佳為縱及橫之尺寸為200 μm以下。若使用此種發光元件2，則於進行液晶顯示器裝置之區域調光時可實現高精細之影像。又，若使用縱及橫之尺寸為500 μm以下之發光元件2，則可低價地提供發光元件2，故而可使發光模組變得低價。再者，縱及橫之尺寸兩者均為250 μm以下之發光元件2由於發光元件2之光放射面2d之面積變小，故而來自發光元件2之側面之光之出射量相對地變多。即，此種發光元件2由於配向特性容易變成蝙蝠翼型，故而可較佳地用於發光元件2接合於導光板且發光元件2與導光板之距離極短之本實施形態之發光模組。The light emitting element 2 has a semiconductor layered structure 2a. The multilayer structure 2a includes a light emitting layer, an n-type semiconductor layer and a p-type semiconductor layer sandwiching the light emitting layer, and electrode posts 2c on the n-side and p-side are provided on the electrode surface 2b. As the light-emitting element 2, the vertical, horizontal and height dimensions are not particularly limited, and it is preferable to use a laminated structure 2a whose vertical and horizontal dimensions are 1000 μm or less in plan view, and more preferably 500 μm or less in the vertical and horizontal dimensions. , and more preferably the vertical and horizontal dimensions are 200 μm or less. If such a light-emitting element 2 is used, high-definition images can be realized when performing local dimming of a liquid crystal display device. In addition, if the light-emitting element 2 whose vertical and horizontal dimensions are 500 μm or less is used, the light-emitting element 2 can be provided at low cost, so that the light-emitting module can be reduced in price. Furthermore, since the area of the light emitting surface 2d of the light-emitting element 2 of the light-emitting element 2 whose vertical and horizontal dimensions are both 250 μm or less is reduced, the amount of light emitted from the side surface of the light-emitting element 2 is relatively increased. That is, the light-emitting element 2 can easily become a batwing shape due to its alignment characteristics, so it can be preferably used in the light-emitting module of this embodiment in which the light-emitting element 2 is bonded to the light guide plate and the distance between the light-emitting element 2 and the light guide plate is extremely short.

被覆構件3設置為以使一對電極柱2c之表面露出之方式覆蓋發光元件2之電極面2b及側面。被覆構件3位於發光元件2之周圍且供埋設發光元件2，使發光元件2之電極柱2c露出於表面。被覆構件3使外周面與透光性構件4之外周面為同一平面，亦密接於透光性構件4。被覆構件3係與發光元件2及透光性構件4接合為一體構造而製作成發光裝置1。The covering member 3 is provided to cover the electrode surface 2b and side surfaces of the light emitting element 2 so that the surfaces of the pair of electrode posts 2c are exposed. The covering member 3 is located around the light emitting element 2 and is used for embedding the light emitting element 2 so that the electrode posts 2c of the light emitting element 2 are exposed on the surface. The covering member 3 is also in close contact with the translucent member 4 so that the outer peripheral surface is flush with the outer peripheral surface of the translucent member 4 . The covering member 3 is integrated with the light emitting element 2 and the translucent member 4 to form the light emitting device 1 .

被覆構件3例如較佳為以聚矽氧樹脂、聚矽氧改性樹脂、環氧樹脂、酚系樹脂等聚合物為主成分之樹脂構件。被覆構件3較佳為設為光反射性之樹脂構件。所謂光反射性樹脂係指對來自發光元件2之光之反射率為70%以上之樹脂材料。例如，較佳為白色樹脂等。到達至被覆構件3之光被反射後朝向發光裝置1之發光面，藉此，可提高發光裝置1之光提取效率。又，於如中間體8之形狀之情形時，作為被覆構件3，較佳為設為透光性之樹脂構件。此情形時之被覆構件3可使用與下述透光性構件4同樣之材料。The covering member 3 is preferably, for example, a resin member mainly composed of a polymer such as silicone resin, silicone-modified resin, epoxy resin, or phenolic resin. The covering member 3 is preferably a light reflective resin member. The so-called light reflective resin refers to a resin material with a reflectivity of 70% or more for the light from the light emitting element 2 . For example, white resin etc. are preferable. The light reaching the covering member 3 is reflected toward the light emitting surface of the light emitting device 1 , thereby improving the light extraction efficiency of the light emitting device 1 . In addition, in the case of the shape of the intermediate body 8 , it is preferable to use a translucent resin member as the covering member 3 . In this case, the same material as that of the translucent member 4 described below can be used for the covering member 3 .

透光性構件4係以覆蓋發光元件2之光放射面2d(於圖1A中為上表面且為與形成有電極柱2c之電極面2b對向之面)之方式設置，使自光放射面2d出射之光透過。透光性構件4藉由包含下述螢光體，可將來自發光元件2之發光色調整後放射。透光性構件亦可由複數層形成。The light-transmitting member 4 is provided in such a way as to cover the light-emitting surface 2d of the light-emitting element 2 (the upper surface in FIG. 2d outgoing light through. The translucent member 4 can adjust and emit the color of light emitted from the light emitting element 2 by including the following phosphor. The translucent member may also be formed of plural layers.

透光性構件4可使用透光性樹脂、玻璃等。尤佳為透光性樹脂，可使用聚矽氧樹脂、聚矽氧改性樹脂、環氧樹脂、酚系樹脂等聚合物、聚碳酸酯樹脂、丙烯酸樹脂、甲基戊烯樹脂、聚降冰片烯樹脂等熱塑性樹脂。尤其是，耐光性、耐熱性優異之聚矽氧樹脂為宜。Translucent resin, glass, or the like can be used for the translucent member 4 . It is especially preferred to be a light-transmitting resin, such as polysiloxane resin, polysiloxane modified resin, epoxy resin, phenolic resin and other polymers, polycarbonate resin, acrylic resin, methylpentene resin, polynorbornene, etc. Thermoplastic resins such as vinyl resins. In particular, a polysiloxane resin excellent in light resistance and heat resistance is preferable.

透光性構件4亦可包含螢光體。螢光體使用可由自發光元件之發光激發者。例如，作為可由藍色發光元件或紫外線發光元件激發之螢光體，可列舉藉由鈰而活化之釔-鋁-石榴石系螢光體(YAG：Ce)；藉由鈰而活化之鎦-鋁-石榴石系螢光體(LAG：Ce)；藉由銪及/或鉻而活化之含氮鋁矽酸鈣系螢光體(CaO-Al2 O3 -SiO2 )；藉由銪而活化之矽酸鹽系螢光體((Sr,Ba)2 SiO4 )；β賽隆螢光體、CASN(calcium aluminum silicon nitroge，鈣鋁矽氮)系螢光體、SCASN((strontium,calcium) aluminum silicon nitroge，(鍶,鈣)鋁矽氮)系螢光體等氮化物系螢光體；KSF系螢光體(K2 SiF6 ：Mn)；硫化物系螢光體、量子點螢光體等。藉由將該等螢光體與藍色發光元件或紫外線發光元件組合，可製成各種顏色之發光裝置1(例如白色系之發光裝置1)。The translucent member 4 may also contain a phosphor. As the phosphor, one that can be excited by the light emission of the self-luminous element is used. For example, as a phosphor that can be excited by a blue light-emitting element or an ultraviolet light-emitting element, yttrium-aluminum-garnet-based phosphor (YAG: Ce) activated by cerium; Aluminum-garnet-based phosphors (LAG: Ce); nitrogen-containing calcium-aluminosilicate phosphors activated by europium and/or chromium (CaO-Al 2 O 3 -SiO 2 ); activated by europium Activated silicate phosphor ((Sr,Ba) 2 SiO 4 ); β-sialon phosphor, CASN (calcium aluminum silicon nitrogen, calcium aluminum silicon nitrogen) phosphor, SCASN ((strontium,calcium ) aluminum silicon nitrogen, (strontium, calcium) aluminum silicon nitrogen) phosphors and other nitride-based phosphors; KSF-based phosphors (K 2 SiF 6 : Mn); sulfide-based phosphors, quantum dot phosphors light body etc. By combining these phosphors with blue light-emitting elements or ultraviolet light-emitting elements, light-emitting devices 1 of various colors (for example, white light-emitting devices 1 ) can be produced.

又，出於調整黏度等目的，於透光性構件4中亦可含有各種填料等。In addition, various fillers and the like may be contained in the translucent member 4 for the purpose of adjusting viscosity and the like.

透光性構件4可採用各種態樣。例如於圖1D之剖視圖中表示透光性構件4之變化例。於圖1D所示之發光裝置1D中，具備覆蓋第1透光性構件4A之放射面(於圖1D中為上表面且為與發光元件2相反之側之面)之第2透光性構件4B。第1透光性構件4A接合於發光元件2之光放射面2d，使自發光元件2之光放射面2d出射之光透過。第1透光性構件4A亦可包含螢光體。第2透光性構件4B係使透過光擴散之光擴散部。透光性構件4係將第1透光性構件4A與第2透光性構件4B接合，且將第1透光性構件4A配置於發光面側。透光性構件亦可積層複數個第1透光性構件或第2透光性構件。Various forms can be adopted for the translucent member 4 . For example, a modified example of the translucent member 4 is shown in the cross-sectional view of FIG. 1D . In the light-emitting device 1D shown in FIG. 1D , a second light-transmitting member covering the radiation surface of the first light-transmitting member 4A (the upper surface in FIG. 1D and the surface opposite to the light-emitting element 2 ) is provided. 4B. The first translucent member 4A is bonded to the light emitting surface 2 d of the light emitting element 2 , and transmits the light emitted from the light emitting surface 2 d of the light emitting element 2 . The first translucent member 4A may also include a phosphor. The second light-transmitting member 4B is a light-diffusing portion that diffuses transmitted light. In the translucent member 4 , the first translucent member 4A and the second translucent member 4B are bonded together, and the first translucent member 4A is disposed on the light emitting surface side. As for the translucent member, a plurality of first translucent members or second translucent members may be laminated.

透光性構件4可進而採用另一態樣。於圖1E之剖視圖中表示透光性構件4之另一變化例。於圖1E所示之發光裝置1E之例中，透光性構件4係以覆蓋發光元件2之光放射面2d及積層構造體2a之側面之方式設置，使自光放射面2d及積層構造體2a之側面出射之光透過。亦可於透光性構件4之上表面設置光擴散部。The translucent member 4 can further adopt another aspect. Another modified example of the translucent member 4 is shown in the sectional view of FIG. 1E. In the example of the light-emitting device 1E shown in FIG. 1E , the light-transmitting member 4 is provided so as to cover the light-emitting surface 2d of the light-emitting element 2 and the side surface of the laminated structure 2a, so that the light-emitting surface 2d and the laminated structure The light emitted from the side of 2a passes through. A light diffusion part may be provided on the upper surface of the translucent member 4 .

於圖1E中，被覆構件3設置為以使一對電極柱2c之表面露出之方式覆蓋透光性構件4之與上表面為相反側之面(於圖1E中為下表面)、發光元件2之電極面2b及電極柱2c側面。被覆構件3使外周面與透光性構件4之外周面為同一平面，亦密接於透光性構件4。被覆構件3係與發光元件2及透光性構件4接合為一體構造而製作成發光裝置1。In FIG. 1E , the covering member 3 is provided so as to cover the surface of the light-transmitting member 4 opposite to the upper surface (lower surface in FIG. The electrode surface 2b and the side of the electrode column 2c. The covering member 3 is also in close contact with the translucent member 4 so that the outer peripheral surface is flush with the outer peripheral surface of the translucent member 4 . The covering member 3 is integrated with the light emitting element 2 and the translucent member 4 to form the light emitting device 1 .

一對電極層5分別電性連接於一對電極柱2c。各電極層5之面積大於各電極柱2c之面積。換言之，電極層5係以連續覆蓋發光元件2之電極柱2c及被覆構件3之方式設置。The pair of electrode layers 5 are respectively electrically connected to the pair of electrode posts 2c. The area of each electrode layer 5 is larger than the area of each electrode post 2c. In other words, the electrode layer 5 is provided so as to continuously cover the electrode posts 2 c of the light emitting element 2 and the covering member 3 .

電極端子6積層並電性連接於電極層5之表面。電極端子6較電極層5厚，進而分開為較一對電極柱2c之間隔大之間隔而配置。間隔較大之電極端子6可在防止端子間短路等弊端的同時進行外部連接，又，較厚之電極端子6之發光裝置1可確實並穩定地電性連接於外部。The electrode terminals 6 are laminated and electrically connected to the surface of the electrode layer 5 . The electrode terminal 6 is thicker than the electrode layer 5, and furthermore, it is separated and arranged at an interval larger than that between the pair of electrode posts 2c. The electrode terminals 6 with larger intervals can be connected to the outside while preventing short-circuit between the terminals, and the light-emitting device 1 with the thicker electrode terminals 6 can be reliably and stably electrically connected to the outside.

如圖1A所示，透光性接著構件16被覆發光元件2之側面及透光性構件4之一部分。再者，透光性接著構件16之外側面較佳為自發光元件2之側面朝向透光性構件4擴大之傾斜面，更佳為向發光元件2側呈凸狀之曲面。藉此，可將自發光元件2之側面發出之光進一步向透光性構件4導引，從而可提高光提取效率。As shown in FIG. 1A , the translucent adhesive member 16 covers the side surface of the light emitting element 2 and a part of the translucent member 4 . Furthermore, the outer side of the light-transmitting bonding member 16 is preferably an inclined surface that expands from the side of the light-emitting element 2 toward the light-transmitting member 4 , and is more preferably a curved surface that is convex toward the side of the light-emitting element 2 . Thereby, the light emitted from the side surface of the light-emitting element 2 can be further guided to the translucent member 4, thereby improving the light extraction efficiency.

又，亦可於發光元件2之光放射面2d與透光性構件4之間具有透光性接著構件16。藉此，例如藉由在透光性接著構件16中含有擴散劑等，自發光元件2之光放射面2d發出之光藉由透光性接著構件16而擴散並進入至透光性構件4，藉此可減少亮度不均。透光性接著構件16可使用與下述透光性接合構件12相同之構件。In addition, a translucent adhesive member 16 may be provided between the light emitting surface 2 d of the light emitting element 2 and the translucent member 4 . Thereby, for example, by containing a diffusing agent or the like in the light-transmitting adhesive member 16, the light emitted from the light emitting surface 2d of the light-emitting element 2 is diffused by the light-transmitting adhesive member 16 and enters the light-transmitting member 4, Thereby, brightness unevenness can be reduced. As the translucent bonding member 16, the same member as that of the translucent bonding member 12 described below can be used.

此種發光裝置1可藉由以下步驟而形成。 包括如下步驟：(1)準備中間體8之步驟，該中間體8具備在電極面2b具備一對電極柱2c之發光元件2、及以使各電極柱2c之表面之一部分露出之方式覆蓋發光元件2之被覆構件3； (2)積層步驟，其係形成電性連接於露出之一對電極柱2c並連續覆蓋電極柱2c及被覆構件3的金屬層9； (3)分割步驟，其係對金屬層9照射雷射光將金屬層9之一部分去除，分離為一對電極層5，而形成相互隔開並且面積大於一對電極柱2c之各者之一對電極層5；以及 (4)電極形成步驟，其係將電性連接於一對電極層5之一對電極端子6設置為較電極層5厚且以較一對電極柱2c之間隔大之間隔設置。Such a light emitting device 1 can be formed through the following steps. It includes the following steps: (1) The step of preparing an intermediate body 8 having a light-emitting element 2 having a pair of electrode posts 2c on an electrode surface 2b, and covering and emitting light in such a manner that a part of the surface of each electrode post 2c is exposed. The covering member 3 of the element 2; (2) Lamination step, which is to form a metal layer 9 electrically connected to the exposed pair of electrode posts 2c and continuously covering the electrode posts 2c and the covering member 3; (3) Separation step, which is to irradiate laser light to the metal layer 9 to remove a part of the metal layer 9, separate into a pair of electrode layers 5, and form a pair of each one separated from each other and having an area larger than a pair of electrode columns 2c electrode layer 5; and (4) The electrode forming step is to arrange the pair of electrode terminals 6 electrically connected to the pair of electrode layers 5 to be thicker than the electrode layer 5 and to have a larger interval than the pair of electrode posts 2c.

以下，使用圖2A～圖2E對發光裝置之製造步驟進行詳細說明。 (準備中間體之步驟)Hereinafter, the manufacturing steps of the light-emitting device will be described in detail using FIGS. 2A to 2E . (Steps for preparing intermediates)

如圖2A所示，準備具備發光元件2及被覆構件3之中間體8。發光元件2具備積層構造體2a，且於積層構造體2a之同一面側具備一對電極柱2c。被覆構件3以使一對電極柱2c之表面之一部分露出之方式被覆發光元件2。1個中間體8具備複數個發光元件2，各發光元件2以於縱向及橫向上規律地排列之狀態，由被覆構件3一體地被覆。再者，於對步驟進行說明之圖(例如圖2A～圖2E)中，為了便於說明，而例示出2個發光元件2，但個數並不限定於此。As shown in FIG. 2A , intermediate body 8 including light emitting element 2 and covering member 3 is prepared. The light emitting element 2 includes a laminated structure 2a, and includes a pair of electrode posts 2c on the same surface side of the laminated structure 2a. The covering member 3 covers the light-emitting element 2 so that a part of the surface of the pair of electrode posts 2c is exposed. One intermediate body 8 includes a plurality of light-emitting elements 2, and each light-emitting element 2 is in a state of being regularly arranged in the vertical and horizontal directions. It is integrally covered by the covering member 3 . In addition, in the figure (for example, FIG. 2A - FIG. 2E) explaining a process, for convenience of description, although the two light emitting elements 2 are illustrated, the number is not limited to this.

發光元件2間之距離可根據作為目標之發光裝置1之大小、發光元件2之大小等適當選擇。但是，於在後續步驟中將被覆構件3切斷而分割為複數個發光裝置1之方法中，亦考慮該切斷部分之寬度(切斷刀之寬度)等進行配置。The distance between the light-emitting elements 2 can be appropriately selected according to the size of the light-emitting device 1 to be targeted, the size of the light-emitting elements 2, and the like. However, in the method of cutting the covering member 3 and dividing it into a plurality of light-emitting devices 1 in a subsequent step, the width of the cut portion (the width of the cutting blade) and the like are also taken into consideration for arrangement.

又，於圖2A中，例示出在發光元件2之下表面(為光放射面2d且為與電極面2b對向之面)具有透光性構件4之中間體8。然而，未必需要透光性構件4，亦可將該透光性構件4省略。中間體8係使未形成電極柱2c之側之面(於圖2A中為形成有透光性構件4之面)與支持構件30對向而載置於該支持構件30上。 (形成金屬層9之積層步驟)In addition, in FIG. 2A , an intermediate body 8 having a light-transmitting member 4 on the lower surface of the light-emitting element 2 (which is the light emitting surface 2d and the surface facing the electrode surface 2b) is shown as an example. However, the translucent member 4 is not necessarily required, and the translucent member 4 may be omitted. The intermediate body 8 is mounted on the support member 30 so that the surface on which the electrode post 2c is not formed (the surface on which the light-transmitting member 4 is formed in FIG. 2A ) faces the support member 30 . (Lamination step for forming metal layer 9)

其次，如圖2B所示，形成連續覆蓋露出之一對電極柱2c及被覆構件3之金屬層9。金屬層9可藉由濺鍍、蒸鍍、原子層堆積(Atomic Layer Deposition；ALD)法或有機金屬化學氣相沈積(Metal Organic Chemical Vapor Deposition；MOCVD)法、電漿CVD(Plasma-Enhanced Chemical Vapor Deposition；PECVD)法、大氣壓電漿成膜法等形成。Next, as shown in FIG. 2B , the metal layer 9 is formed to continuously cover the exposed pair of electrode posts 2 c and the covering member 3 . The metal layer 9 can be formed by sputtering, evaporation, atomic layer deposition (Atomic Layer Deposition; ALD) method or metal organic chemical vapor deposition (Metal Organic Chemical Vapor Deposition; MOCVD) method, plasma CVD (Plasma-Enhanced Chemical Vapor Deposition; PECVD) method, atmospheric pressure plasma film forming method, etc.

金屬層9較佳為例如最表面之層為Au、Pt等鉑族元素之金屬。又，亦可將焊接性良好之Au用於最表面。The metal layer 9 is preferably, for example, a metal of platinum group elements such as Au and Pt on the outermost layer. In addition, Au having good solderability can also be used for the outermost surface.

金屬層9可僅由單一材料之一層構成，亦可積層不同材料之層而構成。尤佳為使用高熔點之金屬層9，例如可列舉Ru、Mo、Ta等。又，藉由將該等高熔點之金屬設置於發光元件2之電極柱2c與最表面之層之間，可製成防擴散層，該防擴散層能夠減少焊料中所包含之Sn擴散至電極柱2c或靠近電極柱2c之層。作為具備此種防擴散層之積層構造之例，可列舉Ni/Ru/Au、Ti/Pt/Au等。又，作為防擴散層(例如Ru)之厚度，較佳為10 Å～1000 Å左右。The metal layer 9 may consist of only one layer of a single material, or may be formed by laminating layers of different materials. It is particularly preferable to use a metal layer 9 with a high melting point, for example, Ru, Mo, Ta, etc. can be mentioned. Also, by disposing such high-melting-point metals between the electrode posts 2c and the outermost layer of the light-emitting element 2, a diffusion prevention layer can be formed, which can reduce the diffusion of Sn contained in the solder to the electrodes. The pillar 2c or the layer close to the electrode pillar 2c. Examples of a laminate structure including such a diffusion prevention layer include Ni/Ru/Au, Ti/Pt/Au, and the like. Also, the thickness of the diffusion prevention layer (for example, Ru) is preferably about 10 Å to 1000 Å.

關於金屬層9之厚度，可進行各種選擇。可設為選擇性地引起雷射剝蝕之程度，例如較佳為1 μm以下，更佳為1000 Å以下。又，較佳為可減少電極柱2c之腐蝕之厚度、例如5 nm以上。此處，於積層複數層而構成金屬層9之情形時，所謂金屬層9之厚度係指該複數層之合計厚度。 (形成電極間狹縫之分割步驟)With regard to the thickness of the metal layer 9, various choices can be made. The degree of selectively causing laser ablation can be set, for example, it is preferably 1 μm or less, more preferably 1000 Å or less. Moreover, it is preferable that the thickness which can reduce the corrosion of the electrode post 2c is 5 nm or more, for example. Here, when the metal layer 9 is formed by laminating a plurality of layers, the thickness of the metal layer 9 means the total thickness of the plurality of layers. (Separation step for forming slits between electrodes)

如圖2C所示，對金屬層9照射雷射光，而設置不具有金屬層9(電極層5)之電極間狹縫作為絕緣區域10。雷射光係照射至設置於發光元件2之一對電極柱2c之間之絕緣區域10。圖3之俯視圖示出配置於電極層5之間之絕緣區域10。絕緣區域10不僅延伸至發光元件2之一對電極柱2c之間，而且亦延伸至位於其延長方向上之被覆構件3之表面，而將金屬層9分割。As shown in FIG. 2C , the metal layer 9 is irradiated with laser light, and an inter-electrode slit that does not have the metal layer 9 (electrode layer 5 ) is provided as an insulating region 10 . The laser light is irradiated to the insulating region 10 provided between the pair of electrode posts 2c of the light emitting element 2 . The top view of FIG. 3 shows the insulating region 10 arranged between the electrode layers 5 . The insulating region 10 extends not only between the pair of electrode posts 2c of the light emitting element 2, but also extends to the surface of the covering member 3 in the extending direction thereof, thereby dividing the metal layer 9.

電極間狹縫之絕緣區域10之寬度與發光元件2之電極柱2c間之寬度大致相同。圖3之發光裝置1係使絕緣區域10之寬度略微大於電極柱2c之寬度。絕緣區域10係藉由雷射剝蝕被去除金屬層9。金屬層9於絕緣區域10被去除，從而被覆構件3呈狹縫狀露出於發光元件2之一對電極柱2c之間。The width of the insulating region 10 of the inter-electrode slit is approximately the same as the width between the electrode posts 2c of the light-emitting element 2 . In the light emitting device 1 of FIG. 3 , the width of the insulating region 10 is slightly larger than the width of the electrode post 2c. The insulating region 10 is removed from the metal layer 9 by laser ablation. The metal layer 9 is removed in the insulating region 10 , so that the covering member 3 is exposed between the pair of electrode posts 2 c of the light emitting element 2 in the shape of a slit.

雷射光可藉由使其照射點於構件上連續地或逐次移動，而照射至金屬層9。雷射光可連續照射，亦可脈衝照射。可考慮被覆構件3或金屬層9之熱導率及其等之熱導率差等，以於被覆構件3上之金屬層9產生雷射剝蝕之方式設定雷射光之強度、照射點之直徑及照射點之移動速度。The laser light can be irradiated to the metal layer 9 by continuously or successively moving the irradiation point on the member. Laser light can be irradiated continuously or pulsed. The intensity of the laser light, the diameter of the irradiation point and The moving speed of the irradiation point.

雷射光之波長較佳為選擇對金屬層9之反射率較低之波長、例如反射率為90%以下之波長。例如，於金屬層9之最表面為Au之情形時，相較於紅色區域(例如640 nm)之雷射，較佳為使用較綠色區域(例如550 nm)短之發光波長之雷射。藉此，可高效率地產生剝蝕，從而提高量產性。The wavelength of the laser light is preferably selected to have a low reflectivity to the metal layer 9 , for example, a wavelength with a reflectivity of 90% or less. For example, when the outermost surface of the metal layer 9 is Au, it is preferable to use a laser with a shorter emission wavelength than a green region (eg, 550 nm) than a laser in a red region (eg, 640 nm). Thereby, ablation can be efficiently generated, and mass productivity can be improved.

圖3之俯視圖所示之發光裝置1由於使用包含複數個發光元件2之中間體8，故而如圖2C及圖3所示，藉由照射雷射光將金屬層9之一部分去除，於1個發光元件2之一對電極柱2c間金屬層9成為分斷之狀態，但該金屬層9係與覆蓋鄰接之複數個發光元件2之電極柱2c之金屬層9連續之狀態。圖3之中間體8係於下述分離為發光裝置之步驟中，藉由將金屬層9於鄰接之發光元件間(圖2E之虛線X所表示之切斷線)切斷，而金屬層9被分割為電極層5。再者，於形成電極間狹縫之分割步驟中，將雷射光亦照射至發光元件間之切斷線X、Y，藉此僅藉由雷射照射便可使金屬層9成為分別獨立之電極層5。The light-emitting device 1 shown in the top view of FIG. 3 uses an intermediate body 8 including a plurality of light-emitting elements 2. As shown in FIG. 2C and FIG. The metal layer 9 between a pair of electrode columns 2c of the element 2 is in a disconnected state, but the metal layer 9 is in a continuous state with the metal layer 9 covering the electrode columns 2c of a plurality of adjacent light emitting elements 2 . The intermediate body 8 of FIG. 3 is in the following step of separating into a light-emitting device, by cutting the metal layer 9 between adjacent light-emitting elements (the cutting line indicated by the dotted line X in FIG. 2E ), and the metal layer 9 It is divided into electrode layers 5 . Moreover, in the dividing step of forming the slits between the electrodes, laser light is also irradiated to the cutting lines X and Y between the light-emitting elements, so that the metal layer 9 can be made into independent electrodes only by laser irradiation. Layer 5.

圖3之中間體8係藉由雷射光將金屬層9呈狹縫狀去除而設置絕緣區域10，從而於絕緣區域10之兩側形成一對電極層5。該圖之中間體8係將配置於發光元件2之電極面2b之中央部分的電極間狹縫之絕緣區域10設為於電極面2b之對角方向上延伸之傾斜狹縫10a，於傾斜狹縫10a之兩端部連結有平行狹縫10b。設置於兩端部之平行狹縫10b以相互平行之姿勢，於與電極面2b之對向之2邊平行之方向上延伸。圖3之發光裝置1係將設置於電極面2b之一對電極柱2c之對向緣配置於四邊形之電極面2b之對角方向，並與該對向緣平行地設置有傾斜狹縫10a。即，將傾斜狹縫10a與電極柱2c之對向緣設為平行之姿勢，於電極層5之間配置有絕緣區域10。In the intermediate body 8 of FIG. 3 , the metal layer 9 is removed in a slit shape by laser light to form an insulating region 10 , thereby forming a pair of electrode layers 5 on both sides of the insulating region 10 . In the intermediate body 8 of this figure, the insulating region 10 of the inter-electrode slit arranged in the central part of the electrode surface 2b of the light-emitting element 2 is set as an inclined slit 10a extending in the diagonal direction of the electrode surface 2b. Parallel slits 10b are connected to both ends of the slit 10a. The parallel slits 10b provided at both ends extend in a direction parallel to the two opposing sides of the electrode surface 2b in a posture parallel to each other. In the light-emitting device 1 of FIG. 3 , the opposing edges of the pair of electrode posts 2c provided on the electrode surface 2b are arranged in the diagonal direction of the quadrangular electrode surface 2b, and inclined slits 10a are provided parallel to the opposing edges. That is, the insulating region 10 is disposed between the electrode layers 5 with the inclined slit 10 a and the facing edge of the electrode post 2 c in a parallel posture.

圖3之中間體8由於電極柱2c略微向電極層5之絕緣區域10突出，故而設置於各發光裝置1之傾斜狹縫10a之寬度略微大於電極柱2c之間隔。傾斜狹縫10a與平行狹縫10b之連結角(α)為鈍角，於電極間狹縫之絕緣區域10之兩側設置包含寬幅部5A及窄幅部5B之一對電極層5，而於絕緣區域10之對向之兩側(於圖中為左右兩側)設置有一對電極層5。 (電極端子6之形成步驟)In the intermediate body 8 in FIG. 3 , since the electrode pillars 2c slightly protrude toward the insulating region 10 of the electrode layer 5, the width of the inclined slit 10a provided in each light emitting device 1 is slightly larger than the distance between the electrode pillars 2c. The connection angle (α) between the inclined slit 10a and the parallel slit 10b is an obtuse angle, and a counter electrode layer 5 including a wide portion 5A and a narrow portion 5B is arranged on both sides of the insulating region 10 of the inter-electrode slit, and the A pair of electrode layers 5 are provided on opposite sides (left and right sides in the figure) of the insulating region 10 . (Formation steps of electrode terminal 6)

圖2D之步驟係於金屬層9之表面塗佈導電膏而設置電極端子6。導電膏係於黏合劑中混合金屬粉末而成者，黏合劑以未硬化之液狀或膏狀於金屬層9之表面塗佈為固定厚度。塗佈於金屬層9之表面之導電膏係黏合劑硬化後將導電性之電極端子6電性連接於金屬層9而形成。導電膏例如為將作為金屬粉末之銀或銅粉末混合於作為黏合劑之聚合物中而成者，使黏合劑之聚合物硬化而形成導電性之電極端子6。將紫外線硬化樹脂或光硬化樹脂用於黏合劑之導電膏具有如下特徵：於塗佈之狀態下照射紫外線或特定波長之光可使黏合劑於短時間內硬化。導電膏係使用金屬遮罩塗佈於電極面2b之特定位置。金屬遮罩係於供設置電極端子6之位置設置貫通孔。於將金屬遮罩積層於電極面2b之狀態下塗佈導電膏，而將導電膏塗佈於設置電極端子6之位置。照射紫外線或光，使所塗佈之導電膏於短時間內硬化而形成電極端子6。該方法可藉由金屬遮罩之厚度調整電極端子6之膜厚。其原因在於：填充於金屬遮罩之貫通孔之導電膏硬化而成為電極端子6。 (分離為發光裝置之步驟)The step in FIG. 2D is to apply conductive paste on the surface of the metal layer 9 to set the electrode terminals 6 . The conductive paste is formed by mixing metal powder in the adhesive, and the adhesive is coated on the surface of the metal layer 9 with a fixed thickness in the form of unhardened liquid or paste. The conductive paste coated on the surface of the metal layer 9 is formed by electrically connecting the conductive electrode terminals 6 to the metal layer 9 after the adhesive hardens. The conductive paste is, for example, a metal powder or copper powder mixed with a binder polymer, and the binder polymer is cured to form conductive electrode terminals 6 . Conductive pastes using ultraviolet curable resins or photocurable resins as adhesives have a feature that the adhesive can be hardened in a short time by irradiating ultraviolet rays or light of a specific wavelength in the applied state. The conductive paste is coated on a specific position on the electrode surface 2b using a metal mask. The metal mask is provided with through-holes at positions where the electrode terminals 6 are provided. The conductive paste is applied in the state where the metal mask is laminated on the electrode surface 2b, and the conductive paste is applied to the position where the electrode terminal 6 is provided. The applied conductive paste is cured in a short time by irradiating ultraviolet rays or light to form electrode terminals 6 . This method can adjust the film thickness of the electrode terminal 6 through the thickness of the metal mask. The reason for this is that the conductive paste filled in the through holes of the metal mask hardens to become the electrode terminals 6 . (Steps of separation into light-emitting devices)

具備複數個發光裝置1之中間體8於設置電極端子6之後，如圖2E及圖3所示，沿切斷線X、Y切斷而分離為發光裝置1。分離所得之發光裝置1被安裝至導光板而成為發光模組。After the intermediate body 8 having a plurality of light emitting devices 1 is provided with the electrode terminals 6, as shown in FIG. 2E and FIG. The separated light emitting device 1 is mounted on a light guide plate to become a light emitting module.

所獲得之發光裝置1具備金屬層9作為電極層5。電極層5分別連接於發光裝置1之一對電極柱2c，並且面積大於一對電極柱2c。又，藉由將金屬層9切斷而獲得之電極層5以到達發光裝置1之端部、即到達發光裝置1之側面之方式形成。藉此，可製成面積更大之電極層5。The obtained light-emitting device 1 is equipped with the metal layer 9 as the electrode layer 5 . The electrode layer 5 is respectively connected to a pair of electrode pillars 2c of the light emitting device 1 , and has a larger area than the pair of electrode pillars 2c. Also, the electrode layer 5 obtained by cutting the metal layer 9 is formed so as to reach the end of the light emitting device 1 , that is, reach the side surface of the light emitting device 1 . Thereby, an electrode layer 5 with a larger area can be produced.

電極端子6較金屬層9厚，例如設為金屬層9之10倍以上。電極端子6之厚度係藉由塗佈導電膏之厚度而進行調整。電極端子6積層設置於薄膜之金屬層9。膜厚例如為500埃左右之金屬層9可減少被覆構件3之損傷且可藉由雷射光去除。The electrode terminal 6 is thicker than the metal layer 9 , for example, 10 times or more than the metal layer 9 . The thickness of the electrode terminal 6 is adjusted by coating the thickness of the conductive paste. The electrode terminals 6 are stacked on the metal layer 9 of the film. The metal layer 9 with a film thickness of, for example, about 500 angstroms can reduce damage to the covered member 3 and can be removed by laser light.

積層設置於電極層5之較厚之電極端子6之發光裝置1可將電極端子6穩定並確實地連接於外部。積層設置於電極層5之電極端子6之厚度例如較佳設為10 μm以上，最佳設為20 μm～40 μm。又，發光裝置1於安裝至導光板等之步驟中，於表面積層塑膠等光反射性構件而電性連接於導電膜。光反射性構件係於對表面進行研磨或研削，使電極端子6露出並加工成與光反射性構件為同一平面之狀態下，電性連接於導電膜。對光反射性構件之表面進行研磨而使電極端子6露出於同一平面之步驟中，電極端子6之表面亦被去除一部分。較厚之電極端子6於絕緣層之研磨步驟中不會產生破損，表面之一部分被研磨後可加工成與光反射性構件為同一平面。The light-emitting device 1 with the thicker electrode terminals 6 laminated on the electrode layer 5 can stably and reliably connect the electrode terminals 6 to the outside. The thickness of the electrode terminal 6 laminated on the electrode layer 5 is, for example, preferably 10 μm or more, most preferably 20 μm to 40 μm. In addition, in the step of mounting the light-emitting device 1 on a light guide plate or the like, a light-reflective member such as plastic is deposited on the surface to be electrically connected to the conductive film. The light reflective member is electrically connected to the conductive film in a state where the surface is polished or ground to expose the electrode terminals 6 and processed to be on the same plane as the light reflective member. In the step of polishing the surface of the light reflective member so that the electrode terminals 6 are exposed on the same plane, a part of the surface of the electrode terminals 6 is also removed. The thicker electrode terminal 6 will not be damaged during the grinding step of the insulating layer, and a part of the surface can be processed to be the same plane as the light reflective member after being ground.

不具有電極端子6之發光裝置於被安裝於導光板之狀態下，極難進行光反射性構件之研磨。其原因在於：為了對例如埋設有500埃左右之極薄之電極層5之光反射性構件的表面進行研磨，使薄膜之電極層5在不受損傷之情況下露出，要求極高之研磨精度。The light-emitting device without the electrode terminal 6 is extremely difficult to polish the light-reflective member in the state of being mounted on the light guide plate. The reason is that in order to polish the surface of a light reflective member embedded with an extremely thin electrode layer 5 of about 500 angstroms, so that the electrode layer 5 of the film is exposed without damage, extremely high grinding accuracy is required. .

配置於面積大於電極柱2c之電極層5之表面的電極端子6能夠以大於電極柱2c之面積並且以大於電極柱2c之間隔，形成於電極層5之表面。導電膏以特定形狀塗佈於電極層5表面之特定位置，而可形成電極端子6。導電膏將電極層5之表面遮蔽，塗佈於特定區域。The electrode terminals 6 disposed on the surface of the electrode layer 5 having an area larger than the electrode pillars 2c can be formed on the surface of the electrode layer 5 with an area larger than the electrode pillars 2c and a larger interval between the electrode pillars 2c. The conductive paste is coated on a specific position on the surface of the electrode layer 5 in a specific shape to form the electrode terminal 6 . The conductive paste covers the surface of the electrode layer 5 and is applied to a specific area.

圖1A之發光裝置1係於狹縫狀之絕緣區域10之兩側，配置有於平行狹縫10b之延伸方向上延伸之形狀之電極端子6。該發光裝置1係於電極層5之寬幅部5A之兩側部，與平行狹縫10b平行地配置有長方形之電極端子6。該發光裝置1由於將一對電極端子6分開配置於方形狀之電極面2b之外周緣之對稱位置，故而能以相較於電極柱2c之間隔而言相當大之間隔配置該一對電極端子6，又，可設置相較於電極柱2c而言相當大之電極端子6。較電極柱2c之間隔大、且較電極柱2c大、進而較電極層5厚之電極端子6之發光裝置1於安裝至特定位置而製成發光模組之步驟中，可確實地電性連接於導電膜。 ＜變化例1＞In the light-emitting device 1 of FIG. 1A , on both sides of a slit-shaped insulating region 10 , electrode terminals 6 having a shape extending in the extending direction of parallel slits 10 b are disposed. In the light-emitting device 1 , rectangular electrode terminals 6 are arranged on both sides of the wide portion 5A of the electrode layer 5 in parallel with the parallel slits 10 b. In this light-emitting device 1, since the pair of electrode terminals 6 are separately arranged at symmetrical positions on the outer periphery of the square-shaped electrode surface 2b, the pair of electrode terminals can be arranged at a considerably larger interval than the interval between the electrode posts 2c. 6. In addition, the electrode terminal 6 which is considerably larger than the electrode column 2c can be provided. The light-emitting device 1 with the electrode terminal 6 having a larger spacing than the electrode pillars 2c, larger than the electrode pillars 2c, and thicker than the electrode layer 5 can be reliably electrically connected in the step of installing the electrode terminal 6 at a specific position to form a light-emitting module. in the conductive film. ＜Modification 1＞

圖4表示變化例1之發光裝置1。該發光裝置1係電極端子6之形狀及位置不同之變化例，其他構造與實施形態1相同。實施形態1之發光裝置1中，將細長之長方形之電極端子6與平行狹縫10b平行地配置於電極面2b之點對稱之位置，但該發光裝置1中，將電極端子6配置於方形狀之被覆構件3之對向之角部且除中央部以外之區域。具體而言，於位於方形狀之電極面2b之點對稱之位置的兩個角部配置有電極端子6。電極端子6之外形係於方形狀之一個角部設置有切口部6a之形狀，且將切口部6a配置於對向之位置。一對電極端子6係將切口部6a以對向之姿勢配置，且於兩切口部6a之間配置有電極柱2c。進而，電極端子6之兩個外周緣配置於被覆構件之外周緣。該電極端子6能以較大之面積配置於被覆構件3之角部。因此，該電極端子6大於電極柱2c，進而大於電極面2b。 ＜實施形態2＞FIG. 4 shows a light emitting device 1 according to Variation 1. As shown in FIG. This light emitting device 1 is a modified example in which the shapes and positions of the electrode terminals 6 are different, and the other structures are the same as those of the first embodiment. In the light-emitting device 1 of Embodiment 1, the long and thin rectangular electrode terminals 6 are arranged parallel to the parallel slits 10b at positions symmetrical to the points of the electrode surface 2b, but in this light-emitting device 1, the electrode terminals 6 are arranged in a square shape. The facing corners of the covering member 3 and the area other than the central portion. Specifically, the electrode terminals 6 are arranged at two corners at positions symmetrical to each other on the square electrode surface 2b. The outer shape of the electrode terminal 6 is a shape in which a notch 6 a is provided at one corner of a square shape, and the notch 6 a is arranged at a facing position. The pair of electrode terminals 6 is arranged with the cutouts 6a facing each other, and the electrode post 2c is arranged between the cutouts 6a. Furthermore, both outer peripheral edges of the electrode terminal 6 are arranged on the outer peripheral edge of the covering member. The electrode terminals 6 can be arranged at the corners of the covering member 3 with a large area. Therefore, the electrode terminal 6 is larger than the electrode post 2c, and further larger than the electrode surface 2b. ＜Embodiment 2＞

實施形態2之發光裝置1之電極端子6之形狀與實施形態1不同。如圖5之俯視圖所示，進行網版印刷而將與實施形態1不同之電極端子6形成於電極層5之表面。網版印刷係將導電膏塗佈於被覆構件3之特定位置之後使之硬化而製成電極端子6。該實施形態之發光裝置1係於藉由與實施形態1相同之步驟形成金屬層9之後，對金屬層9照射雷射光，將金屬層9分割。照射雷射光而設置之絕緣區域10、及電極端子6與實施形態1不同。雷射光係沿著分割為一對電極層5之區域、及發光裝置1之對向之上下2邊照射。雷射光將金屬層9去除而設置狹縫之絕緣區域10，從而將電極層5分割。進而，於圖5中，在發光裝置1之上緣及下緣設置去除金屬層9而成之絕緣區域10。The shape of the electrode terminal 6 of the light-emitting device 1 of the second embodiment is different from that of the first embodiment. As shown in the top view of FIG. 5 , the electrode terminals 6 different from those in the first embodiment are formed on the surface of the electrode layer 5 by performing screen printing. In screen printing, the electrode terminal 6 is formed by applying a conductive paste to a specific position of the covering member 3 and curing it. In the light-emitting device 1 of this embodiment, after the metal layer 9 is formed by the same procedure as that of the first embodiment, the metal layer 9 is irradiated with laser light to divide the metal layer 9 . The insulating region 10 provided by irradiation with laser light and the electrode terminals 6 are different from those of the first embodiment. The laser light is irradiated along the region divided into a pair of electrode layers 5 and the opposing upper and lower sides of the light emitting device 1 . The laser light removes the metal layer 9 to form the insulating region 10 of the slit, thereby dividing the electrode layer 5 . Furthermore, in FIG. 5 , insulating regions 10 obtained by removing the metal layer 9 are provided on the upper and lower edges of the light emitting device 1 .

圖5之發光裝置1中，設置有自電極面2b之中央部沿對角方向延伸之傾斜狹縫10a作為將金屬層9去除而形成之狹縫之絕緣區域10。進而，亦設置有連結於傾斜狹縫10a之兩端部之平行狹縫10b。平行狹縫10b相互平行地配置，且沿著方形狀之電極面2b之對向之2邊(圖中為各發光裝置1之上下2邊)之外周緣平行地配置。傾斜狹縫10a與平行狹縫10b之連結角(α)為銳角，傾斜狹縫10a與平行狹縫10b之連結部位於被覆構件3之角部。該發光裝置1係於圖5中方形狀之被覆構件3之兩側部，設置在與平行狹縫10b交叉之方向上延伸之形狀且為直角三角形狀或梯形狀之電極層5，並於傾斜狹縫10a之兩側配置有一對電極端子6。In the light-emitting device 1 of FIG. 5 , an inclined slit 10 a extending diagonally from the center of the electrode surface 2 b is provided as an insulating region 10 formed by removing the metal layer 9 . Furthermore, parallel slits 10b connected to both ends of the inclined slit 10a are also provided. The parallel slits 10b are arranged parallel to each other, and are arranged in parallel along the outer peripheries of two opposing sides of the square-shaped electrode surface 2b (upper and lower sides of each light emitting device 1 in the figure). The connecting angle (α) between the inclined slit 10a and the parallel slit 10b is an acute angle, and the connecting portion between the inclined slit 10a and the parallel slit 10b is located at the corner of the covering member 3 . The light-emitting device 1 is provided on both sides of the square-shaped covering member 3 in FIG. A pair of electrode terminals 6 are disposed on both sides of the slit 10a.

圖5之發光裝置1係於電極面2b之兩側以特定橫寬設置有電極端子6。配置於切斷線Y之兩側之電極端子6連續為一地設置為帶狀。該等電極端子6沿切斷線Y被切斷而分離。但是，配置於切斷線Y兩側之鄰接之電極端子亦能夠以設置間隔而分離之狀態設置並且於其等之間沿切斷線Y切斷，雖未對此進行圖示。於此情形時，分離後之電極端子之間隔較佳為大於切斷線Y之切斷寬度。該發光裝置由於自外周緣向內側隔開地配置電極端子，故而於沿切斷線Y切斷之步驟中，電極端子不會被切斷。因此，該發光裝置可減少於沿切斷線Y切斷之步驟中電極端子6或電極層5損傷、例如剝離之弊端。 ＜實施形態3＞The light-emitting device 1 in FIG. 5 is provided with electrode terminals 6 with a specific width on both sides of the electrode surface 2b. The electrode terminals 6 arranged on both sides of the cutting line Y are continuously provided in a strip shape. The electrode terminals 6 are cut along the cutting line Y and separated. However, adjacent electrode terminals disposed on both sides of the cutting line Y can also be provided in a spaced apart state and cut along the cutting line Y between them, although this is not shown. In this case, the distance between the electrode terminals after separation is preferably greater than the cutting width of the cutting line Y. In this light-emitting device, since the electrode terminals are spaced from the outer periphery to the inside, the electrode terminals are not cut during the cutting along the cutting line Y. Therefore, the light-emitting device can reduce the disadvantages of damage, such as peeling, of the electrode terminals 6 or the electrode layer 5 during the step of cutting along the cutting line Y. ＜Embodiment 3＞

如圖6之俯視圖所示，實施形態3之發光裝置1係將電極層5之形狀設為與實施形態2不同之形狀。該實施形態之發光裝置1係與圖5所示之發光裝置1同樣地對金屬層9照射雷射光而分割金屬層9，但沿著發光裝置1之對向之上下2邊形成之平行狹縫10b之寬度與實施形態2不同。圖6所示之發光裝置1中，使連結於自電極面2b之中央部沿對角方向延伸之傾斜狹縫10a之兩端部的平行狹縫10b之寬度較傾斜狹縫10a之寬度寬。換言之，使對向地形成於方形狀之電極面2b之兩側的俯視梯形狀之電極層5之寬度(圖中為上下寬度)較實施形態2所示之電極層5窄。圖中所示之電極層5之上下寬度設為大於發光元件2之1邊而可被覆電極面2b之電極柱2c之寬度，且設為發光裝置1之1邊之1/2以下。進而，圖6所示之發光裝置1於方形狀之被覆構件3之對向之角部且除中央部以外之區域配置有電極端子6。該等電極端子6係設為與圖4所示之電極端子6同樣之形狀。如圖所示，配置於被覆構件3之對向之角部且點對稱之位置之一對電極端子6橫跨電極層5及被覆構件3之表面而形成。 (發光模組11)As shown in the plan view of FIG. 6 , in the light-emitting device 1 of the third embodiment, the shape of the electrode layer 5 is different from that of the second embodiment. The light-emitting device 1 of this embodiment divides the metal layer 9 by irradiating laser light on the metal layer 9 similarly to the light-emitting device 1 shown in FIG. The width of 10b is different from Embodiment 2. In the light-emitting device 1 shown in FIG. 6 , the parallel slits 10b connected to both ends of the inclined slit 10a extending diagonally from the center of the electrode surface 2b are made wider than the width of the inclined slit 10a. In other words, the width (vertical width in the figure) of the trapezoidal electrode layer 5 formed opposite to each other on both sides of the square electrode surface 2b is narrower than that of the electrode layer 5 shown in Embodiment 2. The upper and lower width of the electrode layer 5 shown in the figure is set to be larger than the width of the electrode column 2c that can cover the electrode surface 2b on one side of the light emitting element 2, and set to be less than 1/2 of one side of the light emitting device 1. Furthermore, in the light-emitting device 1 shown in FIG. 6 , the electrode terminals 6 are arranged at the opposing corners of the square-shaped covering member 3 except for the center. The electrode terminals 6 have the same shape as the electrode terminals 6 shown in FIG. 4 . As shown in the figure, a pair of electrode terminals 6 arranged at opposing corners of the covering member 3 at point-symmetrical positions is formed across the surface of the electrode layer 5 and the covering member 3 . (Lighting Module 11)

藉由以上步驟製造而成之發光裝置可藉由以下步驟安裝至導光板而製成發光模組。The light-emitting device manufactured through the above steps can be installed on the light guide plate through the following steps to form a light-emitting module.

如圖7之剖視圖所示，發光模組11係於設置於透光性之導光板7之凹部7a安裝有發光裝置1。導光板7於成為向外部放射光之發光面之第1主面7c之相反側的第2主面7d設置有凹部7a。導光板7以特定間距設置有多個凹部7a。於各凹部7a安裝發光裝置1。發光模組11藉由安裝於導光板7之各凹部7a之多個發光裝置1，而自第1主面7c均勻地放射光。 (導光板7)As shown in the cross-sectional view of FIG. 7 , the light-emitting module 11 is installed with the light-emitting device 1 in the concave portion 7 a of the light-transmitting light guide plate 7 . The light guide plate 7 is provided with a concave portion 7a on the second main surface 7d opposite to the first main surface 7c that is a light emitting surface that emits light to the outside. The light guide plate 7 is provided with a plurality of recesses 7a at a certain pitch. The light emitting device 1 is attached to each recessed part 7a. The light emitting module 11 radiates light uniformly from the first main surface 7c by the plurality of light emitting devices 1 installed in the respective recesses 7a of the light guide plate 7 . (light guide plate 7)

導光板7係使自光源入射之光以面狀向外部放射之透光性構件。圖7之導光板7於第2主面7d設置複數個凹部7a，且於鄰接之凹部7a之間設置有V型槽7e。於凹部7a內安裝有發光裝置1。導光板7可設置複數個凹部7a並於各凹部7a配置發光裝置1而製成發光模組11，或者，雖未圖示但可於具有一個凹部之導光板配置一個發光裝置而製成發光塊，並將複數個發光塊配置成平面狀而製成發光模組。如圖7所示，設置有複數個凹部7a之導光板7於凹部7a之間設置有格子狀之V型槽7e。The light guide plate 7 is a translucent member that radiates light incident from a light source to the outside in a planar manner. The light guide plate 7 in FIG. 7 is provided with a plurality of recesses 7a on the second main surface 7d, and a V-shaped groove 7e is provided between the adjacent recesses 7a. The light emitting device 1 is installed in the concave portion 7a. The light guide plate 7 can be provided with a plurality of recesses 7a and a light emitting device 1 can be arranged in each recess 7a to form a light emitting module 11, or, although not shown, a light emitting device can be arranged on a light guide plate with one recess to form a light emitting block , and arrange a plurality of light-emitting blocks in a planar shape to form a light-emitting module. As shown in FIG. 7 , the light guide plate 7 provided with a plurality of recesses 7 a is provided with lattice-like V-shaped grooves 7 e between the recesses 7 a.

V型槽7e供設置反射光之下述光反射性構件14。填充於V型槽7e之光反射性構件14較佳為反射光之白色樹脂，白色樹脂之光反射性構件14防止發光裝置1之發光入射至由V型槽7e劃分之相鄰導光板7，從而防止各發光裝置1之光洩漏至相鄰處。The V-groove 7e is provided with a light reflective member 14 described below that reflects light. The light reflective member 14 filled in the V-shaped groove 7e is preferably a white resin that reflects light. The light reflective member 14 of the white resin prevents the light from the light-emitting device 1 from entering the adjacent light guide plate 7 divided by the V-shaped groove 7e. Therefore, the light of each light emitting device 1 is prevented from leaking to adjacent places.

導光板7之大小係根據凹部7a之個數設定為最佳大小，例如於具有複數個凹部7a之導光板7中，一邊可設為1 cm～200 cm左右，較佳為3 cm～30 cm左右。厚度可設為0.1 mm～5 mm左右，較佳為0.5 mm～3 mm。導光板7之平面形狀例如可設為大致矩形或大致圓形等。The size of the light guide plate 7 is set to the optimum size according to the number of recesses 7a. For example, in a light guide plate 7 with a plurality of recesses 7a, one side can be set to about 1 cm to 200 cm, preferably 3 cm to 30 cm about. The thickness can be set at about 0.1 mm to 5 mm, preferably 0.5 mm to 3 mm. The planar shape of the light guide plate 7 can be, for example, substantially rectangular or substantially circular.

作為導光板7之材料，可使用丙烯酸、聚碳酸酯、環狀聚烯烴、聚對苯二甲酸乙二酯、聚酯等熱塑性樹脂、環氧、聚矽氧等熱固性樹脂等樹脂材料或玻璃等光學透明材料。尤其是，熱塑性之樹脂材料由於可藉由射出成型高效率地製造，故而較佳。其中，較佳為透明性較高且低價之聚碳酸酯。於製造步驟中，不暴露於如回流焊之高溫環境而製造之發光模組11亦可使用如聚碳酸酯之熱塑性且耐熱性較低之材料。As the material of the light guide plate 7, thermoplastic resins such as acrylic, polycarbonate, cyclic polyolefin, polyethylene terephthalate, and polyester, resin materials such as thermosetting resins such as epoxy and polysiloxane, or glass, etc. can be used. Optically clear material. In particular, a thermoplastic resin material is preferable because it can be efficiently produced by injection molding. Among them, polycarbonate having high transparency and low price is preferable. In the manufacturing process, the light-emitting module 11 manufactured without being exposed to the high temperature environment such as reflow soldering can also use a thermoplastic material with low heat resistance such as polycarbonate.

導光板7例如可藉由射出成型或轉注成形而成形。導光板7藉由模具形成為具有凹部7a之形狀，可減少凹部7a之位置偏移並且低價地大量生產。但是，導光板7亦可於成形為板狀之後，藉由NC(numerical control，數值控制)加工機等進行切削加工而設置凹部7a。The light guide plate 7 can be formed, for example, by injection molding or transfer molding. The light guide plate 7 is formed into a shape having the concave portion 7a by a mold, so that positional deviation of the concave portion 7a can be reduced and mass production can be performed at low cost. However, the light guide plate 7 may be formed into a plate shape, and then cut by an NC (numerical control) processing machine or the like to provide the concave portion 7a.

本實施形態之發光模組之導光板能以單層形成，亦可積層複數個透光性之層而形成。於積層複數個透光性之層之情形時，較佳為於任意層間設置折射率不同之層、例如空氣層等。藉此，可製成使光更容易擴散且減少亮度不均之發光模組。此種構成例如可藉由在任意複數個透光性之層之間設置間隔件使該等複數個透光性之層隔開並設置空氣層而實現。又，亦可於導光板7之第1主面7c上設置透光性之層，並於導光板7之第1主面7c與透光性之層之間設置折射率不同之層、例如空氣層等。藉此，可製成使光更容易擴散且減少亮度不均之液晶顯示器裝置。此種構成例如可藉由在任意導光板7與透光性之層之間設置間隔件使該導光板7與透光性之層隔開並設置空氣層而實現。The light guide plate of the light-emitting module of this embodiment can be formed by a single layer, or can be formed by laminating a plurality of light-transmitting layers. When laminating a plurality of light-transmitting layers, it is preferable to provide a layer having a different refractive index, such as an air layer, between arbitrary layers. In this way, a light-emitting module can be made that can diffuse light more easily and reduce brightness unevenness. Such a configuration can be realized, for example, by providing a spacer between any plurality of light-transmitting layers to separate the plurality of light-transmitting layers and providing an air layer. Also, a translucent layer may be provided on the first principal surface 7c of the light guide plate 7, and a layer having a different refractive index, such as air, may be provided between the first principal surface 7c of the light guide plate 7 and the translucent layer. layers etc. Thereby, it is possible to manufacture a liquid crystal display device in which light is diffused more easily and unevenness in brightness is reduced. Such a configuration can be realized, for example, by providing a spacer between any light guide plate 7 and the light-transmitting layer to separate the light-guide plate 7 from the light-transmitting layer and providing an air layer.

導光板7於第1主面7c側設置有具有來自發光裝置1之光之反射或擴散功能的光學功能部7b。該導光板7可將來自發光裝置1之光向側方擴散而使導光板7之面內之發光強度平均化。光學功能部7b例如可具有將光於導光板7之面內擴散之功能。光學功能部7b例如為設置於第1主面7c側之圓錐或四角錐、六角錐等多角錐形等之凹陷、或者圓錐台(參照圖7)或多角錐台等之凹陷。藉此，可使用在導光板7、位於光學功能部7b內之折射率不同之材料(例如空氣)及凹陷之傾斜面之界面將所照射之光向發光元件2之側方方向反射者。又，例如亦可為於具有傾斜面之凹陷設置有光反射性之材料(例如金屬等之反射膜或白色之樹脂)等者。光學功能部7b之傾斜面於剖視下可為平面亦可為曲面。進而，考慮上述凹部7a之深度而決定作為光學功能部7b之凹陷之深度。即，光學功能部7b與凹部7a之深度可於其等隔開之範圍內適當設定。The light guide plate 7 is provided with an optical function part 7b having a function of reflecting or diffusing light from the light emitting device 1 on the side of the first main surface 7c. The light guide plate 7 can diffuse the light from the light emitting device 1 to the side to average the luminous intensity in the plane of the light guide plate 7 . The optical function part 7 b may have the function of diffusing light in the plane of the light guide plate 7 , for example. The optical function part 7b is, for example, a conical, quadrangular, hexagonal, or other polygonal pyramid-shaped depression provided on the first main surface 7c side, or a depression of a truncated cone (see FIG. 7 ) or a polygonal truncated pyramid. Thereby, the irradiated light can be reflected to the lateral direction of the light emitting element 2 at the interface of the light guide plate 7 , the material having a different refractive index (for example, air) in the optical function portion 7b, and the concave inclined surface. Also, for example, a light-reflective material (for example, a reflective film such as metal or white resin) may be provided in the recess having an inclined surface. The inclined surface of the optical function part 7b can be a flat surface or a curved surface in a cross-sectional view. Furthermore, the depth of the depression which is the optical function part 7b is decided considering the depth of the said concave part 7a. That is, the depth of the optical function part 7b and the recessed part 7a can be set suitably within the range which equidistantly separates them.

於圖8A～圖8C及圖9A～圖9B所示之步驟中，發光裝置1被安裝至導光板7之凹部7a。如圖8A及圖8B所示，導光板7係將聚碳酸酯等熱塑性樹脂成形，於第2主面7d成形凹部7a並於第1主面7c設置圓錐台狀之光學功能部7b。將發光裝置1接合於該導光板7之凹部7a。發光裝置1係將發光面側之一部分、於圖中為透光性構件4於厚度方向上插入至塗佈有在未硬化狀態下為液狀之透光性接合構件12的凹部7a，並使透光性接合構件12硬化而固著於導光板7。將透光性接合構件12準確地插入至凹部7a之中心，並使透光性接合構件12硬化，而將發光裝置1接合於導光板7。塗佈於凹部7a之處於未硬化狀態之透光性接合構件12係於將發光裝置1接合於導光板7之狀態下向凹部7a之內側被擠出而填充於凹部7a。但是，未硬化狀態之透光性接合構件亦可於將發光裝置1接合於導光板7之後填充於凹部7a。In the steps shown in FIGS. 8A to 8C and FIGS. 9A to 9B , the light emitting device 1 is mounted to the concave portion 7 a of the light guide plate 7 . As shown in FIG. 8A and FIG. 8B , the light guide plate 7 is made of thermoplastic resin such as polycarbonate, the concave portion 7a is formed on the second main surface 7d, and the truncated conical optical function part 7b is provided on the first main surface 7c. The light emitting device 1 is bonded to the concave portion 7 a of the light guide plate 7 . In the light-emitting device 1, a part of the light-emitting surface side, which is the translucent member 4 in the figure, is inserted in the thickness direction into the concave portion 7a coated with the translucent bonding member 12 which is liquid in an uncured state, and the The translucent bonding member 12 is hardened and fixed to the light guide plate 7 . The light-transmitting bonding member 12 is accurately inserted into the center of the concave portion 7 a, and the light-transmitting bonding member 12 is cured to bond the light-emitting device 1 to the light guide plate 7 . The uncured translucent bonding member 12 coated on the concave portion 7a is pushed out to the inside of the concave portion 7a to fill the concave portion 7a when the light emitting device 1 is bonded to the light guide plate 7 . However, the light-transmitting bonding member in an uncured state may be filled in the concave portion 7 a after bonding the light-emitting device 1 to the light guide plate 7 .

將透光性構件4接合於凹部7a之底面之透光性接合構件12於未硬化狀態下密接於兩者之表面，硬化後將透光性構件4之表面接合於凹部7a之底面。進而，自透光性構件4與凹部7a之底面之間擠出之透光性接合構件12將透光性構件4之外周接合於凹部7a之內周面。該製造方法係將填充於凹部7a之未硬化時為液狀之透光性接合構件12向凹部7a之內部擠出而進行接合。該方法將填充於凹部7a之透光性接合構件12作為接合劑。The translucent joining member 12 that joins the translucent member 4 to the bottom surface of the concave portion 7a is in close contact with both surfaces in an uncured state, and after curing, the surface of the translucent member 4 is bonded to the bottom surface of the concave portion 7a. Furthermore, the translucent joining member 12 extruded from between the translucent member 4 and the bottom surface of the recessed part 7a joins the outer periphery of the translucent member 4 to the inner peripheral surface of the recessed part 7a. In this manufacturing method, the unhardened liquid translucent joining member 12 filled in the recess 7a is extruded into the recess 7a to join. In this method, the translucent bonding member 12 filled in the concave portion 7a is used as a bonding agent.

又，藉由調整塗佈於凹部7a內之透光性接合構件12之塗佈量，而將透光性接合構件12自凹部7a之內側面與發光裝置1之外側面之間之間隙擠出至凹部7a之外側。自凹部7a擠出之透光性接合構件12攀附至與被覆構件3之側面相接之位置，而將被覆構件3之側面被覆。進而，透光性接合構件12擴展至與第2主面7d相接之位置，而被覆第2主面7d之一部分。於此狀態下，透光性接合構件12之上表面於垂直剖視下自發光裝置1之上端部朝向外側形成傾斜面12a。藉此，可將透過透光性接合構件12入射至傾斜面12a之光以均勻之狀態向發光面側反射。透光性接合構件12之傾斜面12a係以如下方式形成：將與被覆構件3之外側面之間所成之角設為銳角，較佳為傾斜角β成為5°～85°。Also, by adjusting the coating amount of the translucent bonding member 12 coated in the concave portion 7a, the translucent bonding member 12 is extruded from the gap between the inner side surface of the concave portion 7a and the outer side surface of the light emitting device 1 to the outside of the recess 7a. The translucent joining member 12 extruded from the recessed part 7a clings to the position which contacts the side surface of the covering member 3, and covers the side surface of the covering member 3. Furthermore, the translucent bonding member 12 spreads to the position where it contacts the 2nd main surface 7d, and covers a part of 2nd main surface 7d. In this state, the upper surface of the translucent bonding member 12 forms an inclined surface 12 a from the upper end of the light emitting device 1 toward the outside in a vertical cross-sectional view. Thereby, the light incident on the inclined surface 12 a through the translucent bonding member 12 can be reflected toward the light-emitting surface side in a uniform state. The inclined surface 12a of the translucent bonding member 12 is formed so that the angle formed with the outer side surface of the covering member 3 is an acute angle, and the inclined angle β is preferably 5° to 85°.

進而，透光性接合構件12亦可攀附至與電極端子6之側面相接之位置而將被覆構件及電極端子6之側面被覆。圖10所示之透光性接合構件12被覆電極端子6之整個外側面。藉此，可擴大傾斜面12a之面積而反射更多之光。又，透光性接合構件12亦可被覆除設置有電極端子6之區域以外之電極層5及絕緣區域10之表面。Furthermore, the translucent bonding member 12 can also be attached to a position in contact with the side surface of the electrode terminal 6 to cover the covering member and the side surface of the electrode terminal 6 . The translucent bonding member 12 shown in FIG. 10 covers the entire outer surface of the electrode terminal 6 . Thereby, the area of the inclined surface 12a can be enlarged to reflect more light. In addition, the light-transmitting bonding member 12 may cover the surface of the electrode layer 5 and the insulating region 10 other than the region where the electrode terminal 6 is provided.

關於透光性接合構件12，亦可將傾斜面12a設為剖視下為曲面。圖11所示之透光性接合構件12係將傾斜面12a設為朝向凹部7a側成為凸狀之曲面。該傾斜面12a可使傾斜面12a中之反射光之行進方向成為較廣之範圍而減少亮度不均。About the translucent joining member 12, you may make the inclined surface 12a into a curved surface in cross-sectional view. In the light-transmitting joining member 12 shown in FIG. 11, the inclined surface 12a is made into the curved surface which becomes convex toward the side of the recessed part 7a. The inclined surface 12a can make the travel direction of the reflected light in the inclined surface 12a wider and reduce uneven brightness.

進而，圖11所示之接合構件12之傾斜面12a相較於圖7所示之狀態更加被覆至導光板7之第2主面7d之外側。詳細而言，較佳為：於剖視下，透光性接合構件12更多地被覆第2主面7d。但是，於1個導光板7具有複數個發光裝置1之情形時，透光性接合構件12較佳為不與被覆鄰接之發光裝置1之透光性接合構件12相接。Furthermore, the inclined surface 12a of the bonding member 12 shown in FIG. 11 is covered further outside the second main surface 7d of the light guide plate 7 than in the state shown in FIG. 7 . Specifically, it is preferable that the translucent bonding member 12 covers more of the second main surface 7 d in a cross-sectional view. However, when one light guide plate 7 has a plurality of light-emitting devices 1 , it is preferable that the translucent bonding member 12 does not contact the translucent bonding member 12 covering the adjacent light-emitting devices 1 .

藉此，可擴大傾斜面12a之面積而反射更多之光。又，該圖所示之透光性接合構件12亦可藉由將傾斜面12a設為於剖視下朝向凹部7a側呈凸狀之曲面，而將反射光擴散至較廣之範圍，從而減少亮度不均。Thereby, the area of the inclined surface 12a can be enlarged to reflect more light. In addition, the light-transmitting joining member 12 shown in this figure can also diffuse the reflected light to a wider range by making the inclined surface 12a a curved surface that is convex toward the side of the concave portion 7a in cross-sectional view, thereby reducing the Uneven brightness.

於圖中，透光性構件4使自發光元件2入射之光透過，並將光入射至供安裝發光裝置1之導光板7。出於使發光模組11薄型化之目的，透光性構件4較佳為如圖所示般位於所安裝之導光板7之凹部7a之內側，不自第2主面7d向表面側突出地配置於凹部7a內。圖7之透光性構件4係設為與凹部7a之深度相等之厚度，使其表面與第2主面7d配置於同一平面。但是，透光性構件4亦可設為位於凹部之內側並自導光板7之第2主面略微向表面側突出的厚度，雖對此未進行圖示。In the figure, the translucent member 4 transmits the light incident from the light emitting element 2, and makes the light incident to the light guide plate 7 on which the light emitting device 1 is mounted. For the purpose of reducing the thickness of the light emitting module 11, the translucent member 4 is preferably located inside the recess 7a of the installed light guide plate 7 as shown in the figure, and does not protrude from the second main surface 7d to the surface side. Arranged in the recessed part 7a. The translucent member 4 shown in FIG. 7 is set to have a thickness equal to the depth of the concave portion 7a, and its surface is arranged on the same plane as the second main surface 7d. However, the light-transmitting member 4 may be positioned inside the concave portion and have a thickness that slightly protrudes from the second main surface of the light guide plate 7 to the front side, although this is not shown in the figure.

將發光裝置1固著於導光板7之凹部7a之後，於圖8C所示之步驟中，於導光板7之第2主面7d形成光反射性構件14。光反射性構件14係使用白色樹脂，形成為將發光裝置1埋設於內部之厚度。光反射性構件14密接於被埋設之發光裝置1之側面，而將相互鄰接之發光裝置1彼此以絕緣狀態固定。After fixing the light-emitting device 1 to the concave portion 7 a of the light guide plate 7 , in the step shown in FIG. 8C , the light reflective member 14 is formed on the second main surface 7 d of the light guide plate 7 . The light reflective member 14 is made of white resin, and is formed in such a thickness as to embed the light emitting device 1 inside. The light reflective member 14 is in close contact with the side surface of the embedded light emitting device 1, and fixes the adjacent light emitting devices 1 in an insulated state.

於圖9A所示之步驟中，對硬化後之光反射性構件14之表面進行研磨，使電極端子6露出於表面。In the step shown in FIG. 9A, the surface of the cured light reflective member 14 is polished to expose the electrode terminals 6 on the surface.

於圖9B所示之步驟中，在光反射性構件14之表面形成導電膜15。於該步驟中，藉由印刷、濺鍍等，於發光裝置1之電極端子6及光反射性構件14之上形成Cu/Ni/Au之金屬膜。In the step shown in FIG. 9B , the conductive film 15 is formed on the surface of the light reflective member 14 . In this step, a metal film of Cu/Ni/Au is formed on the electrode terminals 6 and the light reflective member 14 of the light emitting device 1 by printing, sputtering, or the like.

複數個發光裝置1亦可分別以獨立驅動之方式被配線。又，亦可將導光板7分割為複數個範圍，將安裝於1個範圍內之複數個發光裝置1設為1組，並將該1組內之複數個發光裝置1彼此藉由串聯或並聯地電性連接而連接於相同電路，且具備複數個此種發光裝置組。藉由進行此種分組，可製成能夠進行區域調光之發光模組11。於圖12中，在導光板7排列有複數個發光模組11，且於其外側設置有一對對準標記18。對準標記18例如設置為2個隔開之凹處。藉由沿通過該2個凹處之間之切斷線Z、例如按照Z1、Z2、Z3之順序進行切斷，可分割為發光模組11。該發光模組11中，發光裝置1配置成4列4行之矩陣狀。A plurality of light-emitting devices 1 can also be wired in an independent driving manner. In addition, the light guide plate 7 can also be divided into a plurality of areas, and the plurality of light emitting devices 1 installed in one area can be set as a group, and the plurality of light emitting devices 1 in the group can be connected in series or in parallel. The ground is electrically connected to the same circuit, and a plurality of such light emitting device groups are provided. By performing such grouping, a light emitting module 11 capable of local dimming can be manufactured. In FIG. 12 , a plurality of light emitting modules 11 are arranged on the light guide plate 7 , and a pair of alignment marks 18 are arranged on the outside thereof. The alignment mark 18 is provided, for example, as two spaced apart recesses. The light-emitting modules 11 can be divided by cutting along the cutting line Z passing between the two recesses, for example, in the order of Z1, Z2, and Z3. In the light emitting module 11 , the light emitting devices 1 are arranged in a matrix with 4 columns and 4 rows.

可將1個發光模組11用作1個液晶顯示器裝置之背光裝置。又，亦可將複數個發光模組排列而用作1個液晶顯示器裝置之背光裝置。藉由製作複數個較小之發光模組並分別進行檢查等，與製作較大地安裝之發光裝置之數量較多之發光模組的情形相比，可提高良率。One light emitting module 11 can be used as a backlight device of one liquid crystal display device. Also, a plurality of light emitting modules can be arranged and used as a backlight device of one liquid crystal display device. By manufacturing a plurality of smaller light-emitting modules and inspecting them separately, the yield rate can be improved compared to the case of manufacturing a large number of light-emitting modules with large mounted light-emitting devices.

可將1個發光模組11接合於1個配線基板。又，亦可將複數個發光模組11接合於1個配線基板。藉此，可彙集與外部之電性連接端子(例如連接器)(即，無需逐一準備發光模組)，故而可簡化液晶顯示器裝置之構造。One light emitting module 11 can be bonded to one wiring board. In addition, a plurality of light emitting modules 11 may be bonded to one wiring board. Thereby, the electrical connection terminals (such as connectors) with the outside can be collected (that is, there is no need to prepare light-emitting modules one by one), so the structure of the liquid crystal display device can be simplified.

又，亦可將該接合有複數個發光模組之1個配線基板排列複數個而製成一個液晶顯示器裝置之背光裝置。此時，例如可將複數個配線基板載置於框架等，並分別使用連接器等與外部之電源連接。Moreover, it is also possible to arrange a plurality of this one wiring board bonded with a plurality of light emitting modules to form a backlight device of a liquid crystal display device. In this case, for example, a plurality of wiring boards may be placed on a frame or the like, and each connected to an external power supply using a connector or the like.

再者，亦可於導光板7上進而積層具有擴散等功能之透光性之構件。於此情形時，若光學功能部7b為凹陷，則較佳為以堵塞凹陷之開口(即靠近導光板7之第1主面7c之部分)但不將凹陷掩埋之方式設置透光性之構件。藉此，可於光學功能部7b之凹陷內設置空氣層，從而可將來自發光裝置1之光良好地擴散。Furthermore, light-transmitting members having functions such as diffusion may be further laminated on the light guide plate 7 . In this case, if the optical function part 7b is a depression, it is preferable to provide a translucent member in such a way as to block the opening of the depression (that is, the part close to the first main surface 7c of the light guide plate 7) but not to bury the depression. . Thereby, an air layer can be provided in the recess of the optical function part 7b, and the light from the light emitting device 1 can be diffused favorably.

以上，對本發明之若干實施形態進行了例示，但當然本發明並不限定於上述實施形態，只要不脫離本發明之主旨則可設為任意實施形態。As mentioned above, although some embodiment of this invention was illustrated, it cannot be overemphasized that this invention is not limited to the said embodiment, As long as it does not deviate from the summary of this invention, it can be set as arbitrary embodiment.

本說明書之揭示內容可包含以下態樣。 (態樣1)The disclosure content of this manual may include the following aspects. (pattern 1)

一種發光裝置，其特徵在於，具備： 發光元件2，其係於同一面側設置一對電極柱2c而成； 被覆構件3，其係覆蓋設置一對電極柱2c而成之發光元件2之電極面2b且供設置電極柱2c之露出部而成； 一對電極層5，其等係設置於被覆構件3之表面並電性連接於電極柱2c之露出部而成；及 一對電極端子6，其等係電性連接於電極層5且設置於被覆構件3之表面而成；且 一對電極端子6係較電極層5厚且以較一對電極柱2c之間隔大之間隔配置而成。 (態樣2)A light emitting device, characterized in that it comprises: The light emitting element 2 is formed by arranging a pair of electrode posts 2c on the same side; The covering member 3 is formed by covering the electrode surface 2b of the light-emitting element 2 formed by setting a pair of electrode posts 2c and providing the exposed part of the electrode posts 2c; A pair of electrode layers 5, which are formed on the surface of the covering member 3 and electrically connected to the exposed part of the electrode post 2c; and A pair of electrode terminals 6, which are electrically connected to the electrode layer 5 and formed on the surface of the covering member 3; and The pair of electrode terminals 6 are thicker than the electrode layer 5 and arranged at a larger interval than the pair of electrode posts 2c. (pattern 2)

如態樣1之發光裝置，其特徵在於： 設置一對電極柱2c而成之上述發光元件之上述電極面2b為方形狀，且 一對電極端子6配置於電極面2b之外周緣之對稱位置。 (態樣3)The light emitting device according to Aspect 1 is characterized in that: The above-mentioned electrode surface 2b of the above-mentioned light-emitting element formed by providing a pair of electrode posts 2c has a square shape, and The pair of electrode terminals 6 are arranged at symmetrical positions on the outer periphery of the electrode surface 2b. (pattern 3)

如態樣1或2之發光裝置，其特徵在於： 設置一對電極柱2c而成之發光元件2之電極面2b為方形狀， 於電極面2b，設置有不具有電極層5之絕緣區域10，且 絕緣區域10為電極間狹縫。 (態樣4)The light-emitting device according to aspect 1 or 2 is characterized in that: The electrode surface 2b of the light emitting element 2 formed by setting a pair of electrode posts 2c has a square shape, On the electrode surface 2b, an insulating region 10 without an electrode layer 5 is provided, and The insulating region 10 is an inter-electrode slit. (pattern 4)

如態樣3之發光裝置，其特徵在於： 配置於電極面2b而成之絕緣區域10之電極間狹縫具有自電極面2b之中央部於對角方向上延伸之傾斜狹縫10a。 (態樣5)The light emitting device according to Aspect 3 is characterized in that: The inter-electrode slit of the insulating region 10 disposed on the electrode surface 2b has an inclined slit 10a extending in a diagonal direction from the center portion of the electrode surface 2b. (pattern 5)

如態樣4之發光裝置，其特徵在於： 作為絕緣區域10之電極間狹縫具有連結於傾斜狹縫10a之兩端部而成之平行狹縫10b，且 平行狹縫10b為相互平行之姿勢，並於與電極面2b之對向之2邊平行之方向上延伸。 (態樣6)The light emitting device according to Aspect 4 is characterized in that: The inter-electrode slit as the insulating region 10 has parallel slits 10b formed by connecting both ends of the inclined slit 10a, and The parallel slits 10b are in a posture parallel to each other, and extend in a direction parallel to the two opposing sides of the electrode surface 2b. (pattern 6)

如態樣5之發光裝置，其特徵在於： 傾斜狹縫10a與平行狹縫10b所成之角度為鈍角，且 電極層5設置於狹縫之兩側，具有寬幅部5A及窄幅部5B。 (態樣7)The light emitting device according to Aspect 5 is characterized in that: The angle formed by the inclined slit 10a and the parallel slit 10b is an obtuse angle, and The electrode layer 5 is disposed on both sides of the slit, and has a wide portion 5A and a narrow portion 5B. (pattern 7)

如態樣5或6之發光裝置，其特徵在於： 一對電極端子6係於平行狹縫10b之延伸方向上延伸之形狀。 (態樣8)The light emitting device according to Aspect 5 or 6 is characterized in that: The pair of electrode terminals 6 are shaped to extend in the direction in which the parallel slits 10b extend. (pattern 8)

如態樣5或6之發光裝置，其特徵在於： 一對上述電極端子配置於上述被覆構件之對向之角部且除中央部以外之區域。 (態樣9)The light emitting device according to Aspect 5 or 6 is characterized in that: A pair of the electrode terminals are disposed at the corners facing each other and other than the center of the covering member. (pattern 9)

如態樣6之發光裝置，其特徵在於： 電極端子6配置於方形狀之電極面2b之對向之角部且除中央部以外之區域，且於電極面2b之中央部配置有電極柱2c。 (態樣10)The light emitting device according to Aspect 6 is characterized in that: The electrode terminals 6 are arranged at the opposite corners of the square-shaped electrode surface 2b and in regions other than the central portion, and the electrode post 2c is arranged at the central portion of the electrode surface 2b. (pattern 10)

如態樣1至9中任一態樣之發光裝置，其特徵在於： 電極端子6之厚度為電極層5之厚度之10倍以上。 (態樣11)A light-emitting device according to any one of aspects 1 to 9, characterized in that: The thickness of the electrode terminal 6 is more than 10 times the thickness of the electrode layer 5 . (pattern 11)

一種發光模組，其具備： 如態樣1至10中任一態樣之發光裝置1；及 透光性之導光板7，其係於成為向外部放射光之發光面之第1主面7c之相反側的第2主面7d設置凹部7a而成；且 發光裝置1配置於導光板7之凹部7a。 (態樣12)A lighting module, which has: The light-emitting device 1 of any one of aspects 1 to 10; and The light-transmitting light guide plate 7 is formed by providing a concave portion 7a on the second main surface 7d opposite to the first main surface 7c that becomes the light emitting surface that emits light to the outside; and The light emitting device 1 is disposed in the concave portion 7 a of the light guide plate 7 . (pattern 12)

一種發光裝置之製造方法，其包括如下步驟： 準備中間體8，該中間體8係由被覆構件3覆蓋在同一面側具備一對電極柱2c之發光元件2且於被覆構件3設置電極柱2c之露出部而成； 於被覆構件3之表面，形成電性連接於中間體8之電極柱2c之露出部之一對電極層5；及 電極形成步驟，其係將電性連接於一對電極層5之一對電極端子6設置為較電極層5厚且以較一對電極柱2c之間隔大之間隔設置。 (態樣13)A method of manufacturing a light emitting device, comprising the following steps: Prepare an intermediate body 8, which is formed by covering the light-emitting element 2 with a pair of electrode posts 2c on the same side with the covering member 3 and setting the exposed part of the electrode posts 2c on the covering member 3; On the surface of the covering member 3, a counter electrode layer 5 electrically connected to the exposed portion of the electrode post 2c of the intermediate body 8 is formed; and In the electrode forming step, the pair of electrode terminals 6 electrically connected to the pair of electrode layers 5 is arranged to be thicker than the electrode layer 5 and arranged at an interval greater than that between the pair of electrode posts 2c. (pattern 13)

如態樣12之發光裝置之製造方法，其特徵在於： 將電極層5設為金屬之薄膜，並於電極層5之表面塗佈金屬膏而設置電極端子6。 (態樣14)The method of manufacturing a light-emitting device according to Aspect 12 is characterized in that: The electrode layer 5 is made of a metal thin film, and a metal paste is coated on the surface of the electrode layer 5 to provide the electrode terminal 6 . (pattern 14)

如態樣12或13之發光裝置之製造方法，其特徵在於： 於形成電極層5之步驟中，在被覆構件3之表面形成金屬層9，且 對金屬層9照射雷射光將金屬層9之一部分去除，而分離為一對電極層5。 (態樣15)The method for manufacturing a light-emitting device according to Aspect 12 or 13 is characterized in that: In the step of forming the electrode layer 5, the metal layer 9 is formed on the surface of the covering member 3, and The metal layer 9 is irradiated with laser light to remove a part of the metal layer 9 to separate into a pair of electrode layers 5 . (pattern 15)

一種發光模組之製造方法，其包括如下步驟： 準備發光裝置及導光板7，該發光裝置係藉由如態樣12至14中任一態樣之方法製造而成， 該導光板7具備成為發光面之第1主面7c、及位於與第1主面7c相反之側且設置凹部7a而成之第2主面7d； 將發光裝置1固著於凹部7a； 於導光板7之第2主面7d，設置供埋設發光裝置1之光反射性構件；以及 對光反射性構件進行研磨使電極端子6露出，並於露出之電極端子6之表面形成導電膜15。 [產業上之可利用性]A method of manufacturing a light emitting module, comprising the following steps: Prepare the light-emitting device and the light guide plate 7, the light-emitting device is manufactured by the method of any one of aspects 12 to 14, The light guide plate 7 has a first main surface 7c serving as a light-emitting surface, and a second main surface 7d on the opposite side to the first main surface 7c and provided with a recess 7a; fixing the light emitting device 1 to the concave portion 7a; On the second main surface 7d of the light guide plate 7, a light reflective member for embedding the light emitting device 1 is provided; and The light reflective member is polished to expose the electrode terminals 6 , and a conductive film 15 is formed on the surface of the exposed electrode terminals 6 . [Industrial availability]

本發明之發光裝置、發光模組、發光裝置及發光模組之製造方法可有效地用作面狀體。The light-emitting device, light-emitting module, and manufacturing method of the light-emitting device and light-emitting module of the present invention can be effectively used as a planar body.

1:發光裝置 1D:發光裝置 1E:發光裝置 2:發光元件 2a:積層構造體 2b:電極面 2c:電極柱 2d:光放射面 3:被覆構件 4:透光性構件 4A:第1透光性構件 4B:第2透光性構件 5:電極層 5A:寬幅部 5B:窄幅部 6:電極端子 6a:切口部 7:導光板 7a:凹部 7b:光學功能部 7c:第1主面 7d:第2主面 7e:V型槽 8:中間體 9:金屬層 10:絕緣區域 10a:傾斜狹縫 10b:平行狹縫 11:發光模組 12:透光性接合構件 12a:傾斜面 14:光反射性構件 15:導電膜 16:透光性接著構件 18:對準標記 30:支持構件 X:切斷線 Y:切斷線 Z:切斷線 Z1:切斷線 Z2:切斷線 Z3:切斷線 α:連結角 β:傾斜角1: Lighting device 1D: Lighting device 1E: Lighting device 2: Light emitting element 2a: Laminated structure 2b: Electrode surface 2c: electrode column 2d: Light Radiation Surface 3: Coated components 4: Light-transmitting components 4A: The first translucent member 4B: The second translucent member 5: Electrode layer 5A: wide part 5B: Narrow section 6: Electrode terminal 6a: Notch 7: Light guide plate 7a: concave part 7b: Optical function department 7c: The first main surface 7d: the second main surface 7e: V-groove 8: Intermediate 9: Metal layer 10: Insulation area 10a: Slanted slit 10b: Parallel slits 11: Lighting module 12: Translucent joining member 12a: Inclined surface 14: Light reflective member 15: Conductive film 16: Translucent bonding member 18: Alignment mark 30: Support components X: cut line Y: cutting line Z: cutting line Z1: cutting line Z2: cutting line Z3: cutting line α: connection angle β: tilt angle

圖1A係一實施形態之發光裝置之概略剖視圖。 圖1B係自一實施形態之發光裝置之斜下方觀察所得之概略立體圖。 圖1C係自一實施形態之發光裝置之斜上方觀察所得之概略立體圖。 圖1D係另一實施形態之發光裝置之概略剖視圖。 圖1E係另一實施形態之發光裝置之概略剖視圖。 圖2A～圖2E係表示圖1A之發光裝置之積層步驟之概略剖視圖。 圖3係一實施形態之發光裝置之概略俯視圖。 圖4係另一實施形態之發光裝置之概略俯視圖。 圖5係另一實施形態之發光裝置之概略俯視圖。 圖6係另一實施形態之發光裝置之概略俯視圖。 圖7係一實施形態之發光模組之局部放大概略剖視圖。 圖8A～圖8C係表示一實施形態之發光模組之製造步驟之概略剖視圖。 圖9A～圖9B係表示一實施形態之發光模組之製造步驟之概略剖視圖。 圖10係另一實施形態之發光模組之局部放大概略剖視圖。 圖11係另一實施形態之發光模組之局部放大概略剖視圖。 圖12係一實施形態之發光模組之概略俯視圖。Fig. 1A is a schematic cross-sectional view of a light emitting device according to an embodiment. Fig. 1B is a schematic perspective view of a light-emitting device according to an embodiment observed obliquely from below. Fig. 1C is a schematic perspective view obtained obliquely from above of a light-emitting device according to an embodiment. Fig. 1D is a schematic cross-sectional view of a light emitting device in another embodiment. Fig. 1E is a schematic cross-sectional view of a light emitting device according to another embodiment. 2A to 2E are schematic cross-sectional views showing the stacking steps of the light-emitting device of FIG. 1A. Fig. 3 is a schematic plan view of a light emitting device according to an embodiment. Fig. 4 is a schematic top view of a light emitting device according to another embodiment. Fig. 5 is a schematic top view of a light emitting device according to another embodiment. Fig. 6 is a schematic plan view of a light emitting device according to another embodiment. Fig. 7 is a partially enlarged schematic cross-sectional view of a light-emitting module according to an embodiment. 8A to 8C are schematic cross-sectional views showing manufacturing steps of a light-emitting module according to an embodiment. 9A to 9B are schematic cross-sectional views showing manufacturing steps of a light-emitting module according to an embodiment. Fig. 10 is a partially enlarged schematic cross-sectional view of a light-emitting module in another embodiment. Fig. 11 is a partially enlarged schematic cross-sectional view of a light-emitting module in another embodiment. Fig. 12 is a schematic top view of a light emitting module according to an embodiment.

1:發光裝置 1: Lighting device

2:發光元件 2: Light emitting element

2a:積層構造體 2a: Laminated structure

2b:電極面 2b: Electrode surface

2c:電極柱 2c: electrode column

2d:光放射面 2d: Light Radiation Surface

3:被覆構件 3: Coated components

4:透光性構件 4: Light-transmitting components

5:電極層 5: Electrode layer

6:電極端子 6: Electrode terminal

8:中間體 8: Intermediate

10:絕緣區域 10: Insulation area

16:透光性接著構件 16: Translucent bonding member

Claims (16)

一種發光裝置，其具備：發光元件，其係於同一面側設置一對電極柱而成；被覆構件，其係覆蓋設置一對上述電極柱而成之上述發光元件之電極面且供設置上述電極柱之露出部而成；一對電極層，其等係設置於上述被覆構件之表面並電性連接於上述電極柱之露出部而成，並具有與上述發光元件對向之第1面、及位於上述第1面之相反側之第2面；及一對電極端子，其等係電性連接於上述電極層且設置於上述電極層之第2面而成；且一對上述電極端子較上述電極層厚且以較一對上述電極柱之間隔大之間隔配置，上述電極層之第2面之一部分露出於外部；上述被覆構件於一對上述電極層之間具有雷射損傷區域；設置一對上述電極柱而成之上述發光元件之上述電極面為方形狀；於上述電極面設置有不具有上述電極層之絕緣區域；上述絕緣區域為電極間狹縫；配置於上述電極面而成之上述絕緣區域之上述電極間狹縫具有自上述電極面之中央部於對角方向上延伸之傾斜狹縫。 A light-emitting device comprising: a light-emitting element formed by arranging a pair of electrode pillars on the same surface; a covering member covering the electrode surface of the light-emitting element formed by arranging the pair of electrode pillars and providing the electrodes The exposed part of the post; a pair of electrode layers, which are provided on the surface of the above-mentioned covered member and electrically connected to the exposed part of the above-mentioned electrode post, and have a first surface opposite to the above-mentioned light-emitting element, and The second surface located on the opposite side of the above-mentioned first surface; and a pair of electrode terminals, which are electrically connected to the above-mentioned electrode layer and arranged on the second surface of the above-mentioned electrode layer; The electrode layer is thick and arranged at an interval larger than the interval between the pair of electrode columns, and a part of the second surface of the electrode layer is exposed to the outside; the above-mentioned covering member has a laser damage area between the pair of electrode layers; a The above-mentioned electrode surface of the above-mentioned light-emitting element formed by the above-mentioned electrode column is square; an insulating region without the above-mentioned electrode layer is provided on the above-mentioned electrode surface; the above-mentioned insulating region is a slit between electrodes; it is formed by disposing on the above-mentioned electrode surface The inter-electrode slit of the insulating region has an inclined slit extending in a diagonal direction from a central portion of the electrode surface. 如請求項1之發光裝置，其中設置一對上述電極柱而成之上述發光元件之上述電極面為方形狀，且 一對上述電極端子配置於上述電極面之外周緣之對稱位置。 The light-emitting device according to claim 1, wherein the electrode surface of the light-emitting element formed by setting a pair of electrode pillars is square, and The pair of electrode terminals are arranged at symmetrical positions on the outer periphery of the electrode surface. 如請求項1之發光裝置，其中作為上述絕緣區域之上述電極間狹縫具有連結於上述傾斜狹縫之兩端部而成之平行狹縫，且上述平行狹縫為相互平行之姿勢，且於與上述電極面之對向之2邊平行之方向上延伸。 The light-emitting device according to claim 1, wherein the inter-electrode slit serving as the insulating region has parallel slits connected to both ends of the inclined slit, and the parallel slits are in a posture parallel to each other, and It extends in a direction parallel to the two opposing sides of the electrode surface. 如請求項1之發光裝置，其中上述傾斜狹縫與上述平行狹縫所成之角度為鈍角，且上述電極層設置於上述狹縫之兩側，具有寬幅部及窄幅部。 The light-emitting device according to claim 1, wherein the angle formed by the inclined slit and the parallel slit is an obtuse angle, and the electrode layer is arranged on both sides of the slit, and has a wide portion and a narrow portion. 如請求項3之發光裝置，其中一對上述電極端子係於上述平行狹縫之延伸方向上延伸之形狀。 The light-emitting device according to claim 3, wherein the pair of electrode terminals are shaped to extend in the direction in which the parallel slits extend. 如請求項4之發光裝置，其中一對上述電極端子係於上述平行狹縫之延伸方向上延伸之形狀。 The light-emitting device according to claim 4, wherein the pair of electrode terminals are shaped to extend in the direction in which the parallel slits extend. 如請求項3之發光裝置，其中一對上述電極端子配置於上述被覆構件之對向之角部且除中央部以外之區域。 The light-emitting device according to claim 3, wherein the pair of electrode terminals are disposed at opposite corners of the covering member except for the central portion. 如請求項4之發光裝置，其中 一對上述電極端子配置於上述被覆構件之對向之角部且除中央部以外之區域。 Such as the light emitting device of claim 4, wherein A pair of the electrode terminals are disposed at the corners facing each other and other than the center of the covering member. 如請求項4之發光裝置，其係將上述電極端子配置於方形狀之上述電極面之對向之角部且除中央部以外之區域，且於上述電極面之中央部配置上述電極柱而成。 The light-emitting device according to claim 4, which is formed by arranging the above-mentioned electrode terminals at the opposite corners of the square-shaped above-mentioned electrode surface and excluding the central part, and arranging the above-mentioned electrode post at the central part of the above-mentioned electrode surface . 如請求項1或2之發光裝置，其中上述電極端子之厚度為上述電極層之厚度之10倍以上。 The light-emitting device according to claim 1 or 2, wherein the thickness of the electrode terminal is more than 10 times the thickness of the electrode layer. 如請求項1之發光裝置，其中上述電極端子之連接面及側面露出於外部。 The light-emitting device according to claim 1, wherein the connection surfaces and side surfaces of the electrode terminals are exposed to the outside. 如請求項1之發光裝置，其中上述傾斜狹縫之寬度較上述電極柱之間隔大。 The light-emitting device according to claim 1, wherein the width of the above-mentioned inclined slit is larger than the interval between the above-mentioned electrode pillars. 一種發光模組，其具備：發光裝置，其具有：發光元件，其係於同一面側設置一對電極柱而成；被覆構件，其係覆蓋設置一對上述電極柱而成之上述發光元件之電極面且供設置上述電極柱之露出部而成；一對電極層，其等係設置於上述被覆構件之表面並電性連接於上述電極柱之露出部而成；及一對電極端子，其等係電性連接於上述電極層且設置於上述電極層之表面而成；一對上述電極端子較上述電極層厚且以較一對上述電極柱之間隔大之間隔配置，上 述被覆構件於一對上述電極層之間具有雷射損傷區域；透光性之導光板，其係於成為向外部放射光之發光面之第1主面之相反側的第2主面設置凹部而成；及光反射性構件，其於上述發光裝置配置於上述導光板之上述凹部之狀態下，設置於上述導光板之上述第2主面，並與上述導電層及上述電極端子之側面相接；且上述導光板具有V型槽，上述V型槽供配置上述光反射性構件。 A light-emitting module, which includes: a light-emitting device, which has: a light-emitting element, which is formed by arranging a pair of electrode pillars on the same side; a covering member, which covers the light-emitting element formed by arranging a pair of electrode pillars The electrode surface and the exposed part of the above-mentioned electrode post are provided; a pair of electrode layers are provided on the surface of the above-mentioned covered member and electrically connected to the exposed part of the above-mentioned electrode post; and a pair of electrode terminals are formed. They are electrically connected to the above-mentioned electrode layer and arranged on the surface of the above-mentioned electrode layer; a pair of the above-mentioned electrode terminals is thicker than the above-mentioned electrode layer and arranged at a larger interval than the pair of the above-mentioned electrode columns. The covering member has a laser-damaged region between the pair of electrode layers; a light-transmitting light guide plate is provided with a concave portion on the second main surface opposite to the first main surface that becomes the light-emitting surface that radiates light to the outside and a light reflective member, which is provided on the second main surface of the light guide plate in the state where the light emitting device is arranged in the concave portion of the light guide plate, and is in contact with the side surfaces of the conductive layer and the electrode terminal connected; and the above-mentioned light guide plate has a V-shaped groove, and the above-mentioned V-shaped groove is used for disposing the above-mentioned light reflective member. 一種發光裝置之製造方法，其包括如下步驟：準備中間體，該中間體係由被覆構件覆蓋在同一面側具備一對電極柱之發光元件之電極面且於上述被覆構件設置上述電極柱之露出部而成；於上述被覆構件之表面形成一對電極層，該一對電極層電性連接於上述中間體之上述電極柱之露出部；及電極端子形成步驟，其係將電性連接於一對上述電極層之一對電極端子設置為較上述電極層厚且以較一對上述電極柱之間隔大之間隔設置；於形成上述電極層之步驟中，在上述被覆構件之表面形成金屬層，且對上述金屬層照射雷射光，將上述金屬層之一部分去除，而分離為一對上述電極層，於上述金屬層之一部分去除之上述被覆構件形成雷射損傷區域，於上述電極端子形成步驟中，使用金屬遮罩於上述電極層之表面塗佈導電膏，使所塗佈之上述導電膏硬化而形成上述電極端子；設置一對上述電極柱而成之上述發光元件之上述電極面為方形狀； 於上述電極面設置有不具有上述電極層之絕緣區域；上述絕緣區域為電極間狹縫；配置於上述電極面而成之上述絕緣區域之上述電極間狹縫具有自上述電極面之中央部於對角方向上延伸之傾斜狹縫。 A method for manufacturing a light-emitting device, comprising the steps of: preparing an intermediate body, the intermediate system covering the electrode surface of a light-emitting element having a pair of electrode posts on the same side with a covering member, and providing the exposed portion of the electrode post on the covering member Forming a pair of electrode layers on the surface of the above-mentioned covering member, the pair of electrode layers are electrically connected to the exposed part of the above-mentioned electrode post of the above-mentioned intermediate body; and the electrode terminal forming step, which is to electrically connect the pair of electrode layers A pair of electrode terminals of the above-mentioned electrode layer is provided thicker than the above-mentioned electrode layer and provided at an interval larger than the interval between the pair of the above-mentioned electrode pillars; in the step of forming the above-mentioned electrode layer, a metal layer is formed on the surface of the above-mentioned covering member, and Irradiating the metal layer with laser light, removing a part of the metal layer, and separating it into a pair of the electrode layers, forming a laser damaged region on the covered member from which a part of the metal layer was removed, and in the electrode terminal forming step, Apply a conductive paste on the surface of the electrode layer using a metal mask, and harden the applied conductive paste to form the electrode terminal; the electrode surface of the light-emitting element formed by setting a pair of electrode posts is square; An insulating region without the above-mentioned electrode layer is provided on the above-mentioned electrode surface; the above-mentioned insulating region is an inter-electrode slit; the above-mentioned inter-electrode slit of the above-mentioned insulating region formed on the above-mentioned electrode surface has Slanted slits extending diagonally. 如請求項14之發光裝置之製造方法，其中於上述電極端子形成步驟中，上述導電膏係將金屬粉末混合於作為黏合劑之聚合物中而成者，該黏合劑使用紫外線硬化樹脂或光硬化樹脂，於塗佈之狀態下照射紫外線或特定波長之光而使黏合劑硬化。 The method of manufacturing a light-emitting device according to claim 14, wherein in the step of forming the electrode terminals, the conductive paste is obtained by mixing metal powder with a polymer as a binder, and the binder is cured by ultraviolet rays or light. Resin hardens the adhesive by irradiating ultraviolet light or light of a specific wavelength in the state of coating. 一種發光模組之製造方法，其包括如下步驟：準備發光裝置及導光板，該發光裝置係藉由如請求項14或15之方法製造而成，該導光板具備成為發光面之第1主面、及位於與上述第1主面相反之側且設置凹部而成之第2主面；將上述發光裝置固著於上述凹部；於上述導光板之上述第2主面，設置供埋設上述發光裝置之光反射性構件；以及對上述光反射性構件進行研磨使上述電極端子露出，並於該露出之電極端子之表面形成導電膜。 A method for manufacturing a light-emitting module, which includes the following steps: preparing a light-emitting device and a light guide plate, the light-emitting device is manufactured by the method according to claim 14 or 15, and the light guide plate has a first main surface that becomes a light-emitting surface , and a second main surface that is located on the opposite side to the first main surface and provided with a concave portion; the above-mentioned light-emitting device is fixed to the above-mentioned concave portion; on the above-mentioned second main surface of the above-mentioned light guide plate, the above-mentioned light-emitting device is provided a light reflective member; and grinding the light reflective member to expose the electrode terminal, and forming a conductive film on the surface of the exposed electrode terminal.
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Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7189451B2 (en) 2020-06-30 2022-12-14 日亜化学工業株式会社 Light emitting module, liquid crystal display
JP7174269B2 (en) * 2020-08-25 2022-11-17 日亜化学工業株式会社 light emitting module
JP7256946B2 (en) * 2020-08-25 2023-04-13 日亜化学工業株式会社 light emitting module

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020070449A1 (en) * 2000-12-12 2002-06-13 Lumileds Lighting, U.S., Lls Light-emitting device and production thereof
US20070221935A1 (en) * 2006-03-24 2007-09-27 Advanced Optoelectronic Technology Inc. Package structure of light-emitting diode
US20090114937A1 (en) * 2007-11-05 2009-05-07 Kazuki Kawakubo Resin-sealed light emitting device and its manufacturing method
TW201140897A (en) * 2010-01-07 2011-11-16 Kyushu Inst Technology Led module device and method for manufacturing same
JP2012124443A (en) * 2010-11-15 2012-06-28 Citizen Holdings Co Ltd Semiconductor light emitting device and manufacturing method of the same
WO2012141094A1 (en) * 2011-04-13 2012-10-18 シャープ株式会社 Light source module, and electronic apparatus provided with same
US20160240760A1 (en) * 2015-02-17 2016-08-18 Hsiu Chang HUANG Flip-chip light emitting diode and method for manufacturing the same
US20170179344A1 (en) * 2015-12-21 2017-06-22 Nichia Corporation Method of manufacturing light emitting device
US20170263834A1 (en) * 2016-03-09 2017-09-14 Toyoda Gosei Co., Ltd. LED Package

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6005276A (en) * 1997-11-12 1999-12-21 Advanced Photonix, Inc. Solid state photodetector with light-responsive rear face
JP2005038776A (en) 2003-07-17 2005-02-10 Sony Corp Light guide plate and its manufacturing method, surface light emitting device, and liquid crystal display
US7179670B2 (en) * 2004-03-05 2007-02-20 Gelcore, Llc Flip-chip light emitting diode device without sub-mount
JP4747726B2 (en) * 2004-09-09 2011-08-17 豊田合成株式会社 Light emitting device
JP2007165613A (en) * 2005-12-14 2007-06-28 Showa Denko Kk Gallium-nitride compound semiconductor light emitting element, and its fabrication process
JP5495495B2 (en) 2008-02-18 2014-05-21 シチズン電子株式会社 Surface mount type light emitting diode
JP5426124B2 (en) * 2008-08-28 2014-02-26 株式会社東芝 Semiconductor light emitting device manufacturing method and semiconductor light emitting device
JP5390472B2 (en) 2010-06-03 2014-01-15 株式会社東芝 Semiconductor light emitting device and manufacturing method thereof
JP6107060B2 (en) * 2011-12-26 2017-04-05 日亜化学工業株式会社 Method for manufacturing light emitting device
JP2014160736A (en) * 2013-02-19 2014-09-04 Toshiba Corp Semiconductor light-emitting device and light-emitting device
TWI707484B (en) 2013-11-14 2020-10-11 晶元光電股份有限公司 Light-emitting device
WO2015083365A1 (en) * 2013-12-02 2015-06-11 東芝ホクト電子株式会社 Light-emission device, and production method therefor
JP2016171188A (en) 2015-03-12 2016-09-23 株式会社東芝 Semiconductor light emission device and manufacturing method for the same
JP6645781B2 (en) * 2015-09-11 2020-02-14 アルパッド株式会社 Semiconductor light emitting device
JP6604786B2 (en) 2015-09-11 2019-11-13 三星電子株式会社 Semiconductor light emitting device and manufacturing method thereof
JP6790899B2 (en) * 2017-02-17 2020-11-25 日亜化学工業株式会社 Light emitting module manufacturing method and light emitting module

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020070449A1 (en) * 2000-12-12 2002-06-13 Lumileds Lighting, U.S., Lls Light-emitting device and production thereof
US20070221935A1 (en) * 2006-03-24 2007-09-27 Advanced Optoelectronic Technology Inc. Package structure of light-emitting diode
US20090114937A1 (en) * 2007-11-05 2009-05-07 Kazuki Kawakubo Resin-sealed light emitting device and its manufacturing method
TW201140897A (en) * 2010-01-07 2011-11-16 Kyushu Inst Technology Led module device and method for manufacturing same
JP2012124443A (en) * 2010-11-15 2012-06-28 Citizen Holdings Co Ltd Semiconductor light emitting device and manufacturing method of the same
WO2012141094A1 (en) * 2011-04-13 2012-10-18 シャープ株式会社 Light source module, and electronic apparatus provided with same
US20160240760A1 (en) * 2015-02-17 2016-08-18 Hsiu Chang HUANG Flip-chip light emitting diode and method for manufacturing the same
US20170179344A1 (en) * 2015-12-21 2017-06-22 Nichia Corporation Method of manufacturing light emitting device
US20170263834A1 (en) * 2016-03-09 2017-09-14 Toyoda Gosei Co., Ltd. LED Package

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