TWI789815B - 基板處理方法以及基板處理裝置 - Google Patents
基板處理方法以及基板處理裝置 Download PDFInfo
- Publication number
- TWI789815B TWI789815B TW110124870A TW110124870A TWI789815B TW I789815 B TWI789815 B TW I789815B TW 110124870 A TW110124870 A TW 110124870A TW 110124870 A TW110124870 A TW 110124870A TW I789815 B TWI789815 B TW I789815B
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- substrate
- processing
- film
- liquid
- treatment
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Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2020122304A JP2022018883A (ja) | 2020-07-16 | 2020-07-16 | 基板処理方法および基板処理装置 |
JP2020-122304 | 2020-07-16 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW202206194A TW202206194A (zh) | 2022-02-16 |
TWI789815B true TWI789815B (zh) | 2023-01-11 |
Family
ID=79555489
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW110124870A TWI789815B (zh) | 2020-07-16 | 2021-07-07 | 基板處理方法以及基板處理裝置 |
Country Status (5)
Country | Link |
---|---|
JP (1) | JP2022018883A (ja) |
KR (1) | KR20230013119A (ja) |
CN (1) | CN115868010A (ja) |
TW (1) | TWI789815B (ja) |
WO (1) | WO2022014323A1 (ja) |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013016599A (ja) * | 2011-07-01 | 2013-01-24 | Toshiba Corp | 半導体装置の製造方法 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP3576133B1 (en) | 2018-05-31 | 2023-11-22 | SCREEN Holdings Co., Ltd. | Substrate processing method |
WO2020008965A1 (ja) * | 2018-07-04 | 2020-01-09 | Jsr株式会社 | 基板処理膜形成用組成物及び基板の処理方法 |
-
2020
- 2020-07-16 JP JP2020122304A patent/JP2022018883A/ja active Pending
-
2021
- 2021-06-29 WO PCT/JP2021/024640 patent/WO2022014323A1/ja active Application Filing
- 2021-06-29 CN CN202180047244.3A patent/CN115868010A/zh active Pending
- 2021-06-29 KR KR1020227044739A patent/KR20230013119A/ko not_active Application Discontinuation
- 2021-07-07 TW TW110124870A patent/TWI789815B/zh active
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013016599A (ja) * | 2011-07-01 | 2013-01-24 | Toshiba Corp | 半導体装置の製造方法 |
Also Published As
Publication number | Publication date |
---|---|
KR20230013119A (ko) | 2023-01-26 |
WO2022014323A1 (ja) | 2022-01-20 |
JP2022018883A (ja) | 2022-01-27 |
TW202206194A (zh) | 2022-02-16 |
CN115868010A (zh) | 2023-03-28 |
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