TWI789815B - Substrate processing method and substrate processing device - Google Patents

Abstract

The substrate processing method includes: a processing film forming step of supplying a processing liquid to the surface of the substrate and solidifying or hardening the processing liquid on the surface of the substrate, thereby forming a processing film on the surface of the substrate; The treatment film is irradiated with light to split the treatment film on the surface of the substrate; and the treatment film removal step is to supply a treatment film removal liquid to the surface of the substrate after the light irradiation process, and remove the treatment film by the treatment film. The liquid removes the split treatment film from the surface of the substrate.

Description

Substrate processing method and substrate processing apparatus

The invention relates to a substrate processing method and a substrate processing device for processing a substrate. Substrates to be processed include, for example, semiconductor wafers, substrates for optical disks, substrates for magnetic disks, substrates for magneto-optical disks, substrates for photomasks, ceramic substrates, substrates for solar cells, liquid crystal display devices, and plasma displays. , Substrates such as substrates for flat panel displays (FPD; flat panel display) such as organic EL (electroluminescence; electroluminescence) display devices.

The following Patent Document 1 discloses a substrate processing method in which a processing film is formed on the surface of the substrate to hold objects to be removed such as particles present on the surface of the substrate, and the processing film in a state where the objects to be removed are maintained Be stripped and removed.

In this substrate processing method, the through-hole is formed in the processing film by dissolving a part of the processing film in a stripping liquid and maintaining the remaining part in a solid state. The stripping liquid is continuously supplied, whereby the stripping liquid acts on the interface between the substrate and the processing film through the through holes, and the processing film is peeled off from the substrate. [Prior Art Literature] [Patent Document]

[Patent Document 1] US Patent Application Publication No. 2019/366394.

[Problem to be Solved by the Invention]

In the substrate processing method described in Patent Document 1, it is necessary to maintain most of the processing film in a solid state while a part of the processing film is dissolved by a stripping liquid to form through holes. Therefore, the treatment film system needs to be composed of two components (a low-solubility component and a high-solubility component) having different solubility in the stripping liquid.

Accordingly, an object of the present invention is to provide a substrate processing method and a substrate processing apparatus capable of splitting a processing film without supplying a liquid to the processing film in a configuration in which a processing film is removed from the surface of a substrate by a processing film removing liquid. [Means to solve the problem]

One embodiment of the present invention provides a substrate processing method, which includes: a processing film forming step, which is to supply a processing liquid to the surface of the substrate and solidify or harden the processing liquid on the surface of the substrate, whereby the surface of the substrate Forming a treatment film; a light irradiation step of irradiating light to the aforementioned treatment film, thereby splitting the aforementioned treatment film on the surface of the aforementioned substrate; and a treatment film removal step of applying treatment to the surface of the aforementioned substrate after the aforementioned light irradiation step The film removal solution removes the split treatment film from the surface of the substrate by the treatment film removal solution.

According to this substrate processing method, before the processing film removal solution is supplied to the processing film, the processing film is split by irradiating the processing film with light. The process film that has been split is removed from the surface of the substrate by the process film remover. Since the treatment membrane can be split before the treatment membrane removal solution is supplied, it is not necessary to split the treatment membrane by the treatment membrane removal solution. In this way, the treatment membrane can be broken without supplying liquid to the treatment membrane.

In one embodiment of the present invention, the processing film formed in the processing film forming step holds the object to be removed existing on the surface of the substrate. The step of irradiating light includes a step of splitting the treatment film to form a treatment film piece larger than the object to be removed.

According to this substrate processing method, since the processing film is larger than the object to be removed, the object to be removed can be prevented from falling off from the processing film even after the processing film is split. Therefore, the object to be removed can be favorably removed from the surface of the substrate.

In one embodiment of the present invention, the aforementioned substrate processing method further includes: an irradiation peeling step, which is to irradiate the aforementioned treated film with light after the aforementioned light irradiation step and before the aforementioned treated film removal step, whereby the aforementioned treated The film was peeled off from the surface of the aforementioned substrate.

According to the substrate processing method, light irradiation can not only split the processing film, but also peel the processing film from the surface of the substrate. Therefore, there is no need to split the treatment film by the treatment film removal solution, and it is not necessary to peel off the treatment film by the treatment film removal solution. Therefore, the treatment film can be removed from the upper surface of the substrate using a treatment film removal liquid that hardly has the property to dissolve the treatment film. Thereby, the selectivity of the combination of the treatment liquid and the treatment membrane removal liquid is improved.

In one embodiment of the present invention, the process of removing the process film includes a liquid peeling process of peeling the process film from the surface of the substrate with the process film removing liquid. According to this substrate processing method, even in the case where the processing film is not peeled off by light irradiation, the processing film can be peeled off from the surface of the substrate by the processing film removing liquid.

In one of the embodiments of the present invention, the above-mentioned treatment film system contains a first polymer (first polymer), and the above-mentioned first polymer system has: a main chain in a solid state; and a side chain, which is bonded to the main chain, And it is comprised so that it may liquefy by irradiation of light. Furthermore, the step of irradiating light includes a step of liquefying a side chain of the first polymer to thereby split the treated film.

According to this substrate processing method, a part (side chain) of the first polymer is liquefied by irradiation of light. Therefore, a part of the treated film is liquefied while maintaining most of the treated film in a solid state by irradiation with light. Therefore, the treatment membrane can be split before supplying the treatment membrane removal liquid.

In one embodiment of the present invention, the treatment film includes a second polymer that is decomposed by light irradiation. In addition, the step of irradiating light includes a step of decomposing the second polymer to thereby split the treated film.

According to the substrate processing method, the second polymer is decomposed by the irradiation of light. Therefore, the treatment film, which has been integrated due to the presence of the second polymer, becomes unable to maintain its shape due to the decomposition of the second polymer and splits. Therefore, the treatment membrane can be split before supplying the treatment membrane removal liquid.

In one embodiment of the present invention, the aforementioned second polymer system has: a plurality of hydrocarbon groups; and a C-O bond, connecting the aforementioned hydrocarbon groups to each other. In addition, in the light irradiation step, the C—O bond is cut by the irradiation of light, thereby forming a decomposition product composed of a hydrocarbon compound.

A hydrophobic object to be removed may adhere to the surface of the substrate. Therefore, the removal target substance is surrounded by the hydrocarbon group of the second polymer in the treatment film, thereby being held by the treatment film. As long as a decomposed product composed of a hydrocarbon compound is formed after the decomposition of the second polymer, the object to be removed is maintained surrounded by hydrocarbon groups in the decomposed product even after the second polymer is decomposed. Therefore, even after the treatment membrane is split, the object to be removed can be strongly held by the split treatment membrane.

In one embodiment of the present invention, the aforementioned treatment solution contains: the aforementioned second polymer; and a cross-linking agent that cross-links the aforementioned second polymers with each other by irradiation of light. Furthermore, the process of forming the treated film includes a light crosslinking step of curing the polymers by crosslinking the polymers with the crosslinking agent.

According to the substrate processing method, the second polymers are cross-linked with each other by a cross-linking agent. Thereby, compared with the case where the second polymer is not crosslinked, the hardness of the treated film can be increased. By increasing the hardness of the treated film, the object to be removed can be strongly held by the treated film. Therefore, the object to be removed can be removed to the outside of the substrate together with the split processing film by the processing film removal liquid. Therefore, the object to be removed can be favorably removed from the surface of the substrate.

In one embodiment of the present invention, the step of irradiating light includes a step of irradiating light toward the surface of the substrate through a photomask. Therefore, since the processed film is exposed according to the pattern of the mask, only a part of the processed film can be irradiated with light. For example, it is applicable to the case where there is a portion to be avoided from exposure on the surface of the substrate and the case where the treatment film is to be partially left on the substrate. Unlike this substrate processing method, in the method of supplying a liquid in order to split the processing film, it is difficult to split only a part of the processing film.

Another embodiment of the present invention provides a substrate processing apparatus, which includes: a processing liquid supply unit that supplies the processing liquid toward the surface of the substrate; a processing film forming unit that solidifies or hardens the processing liquid on the surface of the substrate, by This is to form a treatment film on the surface of the aforementioned substrate; the light irradiation unit is to irradiate the surface of the aforementioned substrate with light; the treatment film removal liquid supply unit is to supply the treatment film removal liquid toward the surface of the aforementioned substrate, and the aforementioned treatment film removal liquid system is used. to remove the processing film formed on the substrate; and the controller controls the processing liquid supply unit, the processing film forming unit, the light irradiating unit, and the processing film removal liquid supply unit.

The aforementioned controller is programmed to perform: a processing film forming process of supplying the processing liquid from the processing liquid supply unit to the surface of the substrate, and forming a processing film on the surface of the substrate by the processing film forming unit; a light irradiation process, The processing film is irradiated with light from the light irradiation unit to split the processing film on the surface of the substrate; A treatment film removal solution is supplied to the surface of the substrate, and the treatment film that has been split is removed from the surface of the substrate by the treatment film removal solution.

According to the substrate processing device, the same effect as that of the aforementioned substrate processing method can be achieved.

The above object and other objects, features, aspects and advantages will be more clearly understood through the following detailed description of the present invention with reference to the accompanying drawings.

[First Embodiment]

FIG. 1 is a schematic plan view showing the layout of a substrate processing apparatus 1 according to a first embodiment of the present invention.

The substrate processing device 1 is a blade-type device for processing substrates W such as silicon wafers one by one. In this embodiment, the substrate W is a disk-shaped substrate. As the substrate W, a substrate having an etchable component exposed on the surface can be used. As the substrate W, a substrate having at least one of SiO ₂ (silicon oxide), TiN (titanium nitride), Cu (copper), and Ru (ruthenium) exposed on the surface is preferably used. On the surface of the substrate W, only one type of the above-mentioned substances may be exposed, or a plurality of the above-mentioned substances may be exposed. An etchable substance other than the above substances may be exposed on the surface of the substrate W.

The substrate processing device 1 includes: a plurality of processing units 2, which process the substrate W by fluid; a load port (load port) LP, which is used for loading a carrier C, and the carrier C is used to receive and process the substrate W. The plurality of substrates W processed by the unit 2 ; the transport robot IR and the transport robot CR transport the substrate W between the loading port LP and the processing unit 2 ; and the controller 3 controls the substrate processing device 1 .

The transfer robot IR transfers the substrate W between the carrier C and the transfer robot CR. The transfer robot CR transfers the substrate W between the transfer robot IR and the processing unit 2 . The plurality of processing units 2 have, for example, the same configuration. The details will be described later, but the fluid supplied toward the substrate W in the processing unit 2 includes a processing liquid, a processing film removing liquid, a residue dissolving liquid, and the like.

FIG. 2 is a schematic diagram for explaining a configuration example of the processing unit 2 .

The processing unit 2 includes a chamber (chamber) 4, a spin chuck (spin chuck) 5, a processing cover (processing cup) 7, a light irradiation unit 8, a first moving nozzle 9, a second moving nozzle 10 and a third moving nozzle 11 .

The chamber 4 accommodates the rotation jig 5 , the processing cover 7 , the light irradiation unit 8 , the first moving nozzle 9 , the second moving nozzle 10 and the third moving nozzle 11 . An entrance and exit 4a are formed in the chamber 4, and the entrance and exit 4a are used for carrying in and carrying out the substrate W by the transfer robot CR. The chamber 4 is equipped with a shutter unit 4b, and the shutter unit 4b opens and closes the entrance 4a.

The autorotation jig 5 is an example of a substrate holding and rotating unit, and rotates the substrate W around the rotation axis A1 (vertical axis) while holding the substrate W horizontally. The rotation axis A1 is a vertical straight line passing through the center of the substrate W. As shown in FIG. The spin fixture 5 includes a plurality of chuck pins 20 , a spin base 21 , a rotating shaft 22 and a spin motor 23 .

The spin base 21 has a circular plate shape along the horizontal direction. On the upper surface of the rotary base 21 , a plurality of clamp pins 20 for holding the peripheral edge of the substrate W are arranged at intervals in the circumferential direction of the rotary base 21 .

The rotation base 21 and the plurality of clamp pins 20 constitute a substrate holding unit for holding the substrate W horizontally. The substrate holding unit is also called a substrate holder.

The rotation shaft 22 extends vertically along the rotation axis A1. The upper end of the rotating shaft 22 is coupled to the center of the lower surface of the rotation base 21 . The autorotation motor 23 applies a rotational force to the rotary shaft 22 . The rotation shaft 22 is rotated by the rotation motor 23 , whereby the autorotation base 21 is rotated. Thereby, the substrate W is rotated around the rotation axis A1. The autorotation motor 23 is an example of a substrate rotation unit, and is used to rotate the substrate W around the rotation axis A1.

The light irradiation unit 8 includes: a facing member 6 facing the upper surface (upper surface) of the substrate W held by the rotation jig 5 from above; and a plurality of lamps 80 as light sources mounted on the facing surface. 6a.

The opposing member 6 is formed in a disk shape having substantially the same diameter as the substrate W or a larger diameter than the substrate W. As shown in FIG. The facing surface 6 a is disposed along a substantially horizontal plane above the rotation jig 5 .

A rotation shaft 60 is fixed to the opposite side of the facing surface 6 a of the facing member 6 .

The facing member 6 blocks the atmosphere in the space between the facing surface 6 a and the upper surface of the substrate W from the atmosphere outside the space. Therefore, the facing member 6 is also called a barrier plate.

The plurality of lamps 80 are arranged at equal intervals over the entire area of the facing surface 6a. The processing unit 2 further includes: a lamp energizing unit 85 configured to energize and stop energizing the plurality of lamps 80 . Lamp 80 is energized to emit light. The light rays emitted from each lamp 80 can, for example, be infrared rays, ultraviolet rays, visible light, or the like.

The processing unit 2 further includes: an opposing member elevating unit 61 for elevating the opposing member 6 ; and an opposing member rotating unit 62 for rotating the opposing member 6 around the rotation axis A1 .

The opposing member elevating unit 61 is capable of placing the opposing member 6 at any position (height) from the lower position to the upper position in the vertical direction. The lower position refers to a position where the facing surface 6 a is closest to the substrate W within the movable range of the facing member 6 . The upper position refers to the position where the facing surface 6 a is farthest from the substrate W within the movable range of the facing member 6 . When the facing member 6 is located at the upper position, the transfer robot CR system can access the autorotation jig 5 in order to carry in and carry out the substrate W.

The opposing member elevating unit 61 includes, for example: a ball screw mechanism (not shown) coupled to a support member (not shown) for supporting the rotating shaft 60; and an electric motor (not shown), A driving force is applied to the ball screw mechanism. The opposing member elevating unit 61 is also referred to as an opposing member elevator (baffle plate elevator). The opposing member rotating unit 62 includes, for example, a motor (not shown) for rotating the rotating shaft 60 .

The opposing member elevating unit 61 raises and lowers the plurality of lamps 80 together with the opposing member 6 . The facing member raising and lowering unit 61 is an example of a lamp raising and lowering unit (lamp lifter). The opposing member rotating unit 62 rotates the plurality of lamps 80 together with the opposing member 6 . The opposing member rotating unit 62 is an example of a lamp rotating unit (lamp motor).

The processing cover 7 is composed of: a plurality of protective covers (guard) 71, which are used to catch the liquid scattered outward from the substrate W held by the rotation fixture 5; The cover 71 is guided to the liquid below; and the cylindrical outer wall member 73 surrounds the plurality of protective covers 71 and the plurality of covers 72 .

In this embodiment, an example in which two shield covers 71 (first shield cover 71A and second shield cover 71B) and two covers 72 (first shield cover 72A and second shield 72B) are provided is shown.

The first cover 72A and the second cover 72B each have a form of an annular groove opened upward.

The first protective cover 71A is arranged so as to surround the rotation base 21 . The second protective cover 71B is disposed so as to surround the rotation base 21 on the outside of the first protective cover 71A.

The first protective cover 71A and the second protective cover 71B each have a substantially cylindrical shape. The upper end portion of each protective cover 71 is inclined inwardly toward the rotation base 21 .

The first cover 72A catches the liquid guided downward by the first protective cover 71A. The second cover 72B is formed integrally with the first protective cover 71A, and receives the liquid guided downward by the second protective cover 71B.

The processing unit 2 includes: a protective cover elevating unit 74 , which moves the first protective cover 71A and the second protective cover 71B up and down in the vertical direction, respectively. The shield elevating unit 74 raises and lowers the first shield 71A between a lower position and an upper position. The shield lifting unit 74 lifts the second shield 71B between a lower position and an upper position.

When both the first protective cover 71A and the second protective cover 71B are at the upper position, the liquid scattered from the substrate W is caught by the first protective cover 71A. When the first shield 71A is at the lower position and the second shield 71B is at the upper position, the liquid scattered from the substrate W is caught by the second shield 71B. When both the first protective cover 71A and the second protective cover 71B are in the lower position, the transfer robot CR system can access the rotation chuck 5 for loading and unloading the substrate W.

The protective cover lifting unit 74 includes, for example: a first ball screw mechanism (not shown) coupled to the first protective cover 71A; a first motor (not shown) that imparts driving force to the first ball screw mechanism; Two ball screw mechanisms (not shown) are coupled to the second protective cover 71B; and a second motor (not shown) is used to provide driving force to the second ball screw mechanism. The hood lift unit 74 is also called a hood lifter.

The first moving nozzle 9 is an example of a processing liquid nozzle (processing liquid supply means), and supplies (discharges) the processing liquid toward the upper surface (upper surface) of the substrate W held by the rotary chuck 5 .

The first moving nozzle 9 is moved horizontally and vertically by the first nozzle moving unit 35 . The first moving nozzle 9 is movable between a center position and a home position (retreat position) in the horizontal direction. The first moving nozzle 9 faces the central region of the upper surface of the substrate W when located at the central position.

When the first moving nozzle 9 is located at the home position, it does not face the upper surface of the substrate W, and is located outside the processing cover 7 in plan view. The first moving nozzle 9 can approach the upper surface of the substrate W and retract upward from the upper surface of the substrate W by moving in the vertical direction.

The first nozzle moving unit 35 may also include: an arm (not shown) coupled to the first moving nozzle 9 and extending horizontally; a rotation shaft (not shown) coupled to the arm and extending in a vertical direction; and The rotating shaft drive unit (not shown) is used to lift or rotate the rotating shaft.

The rotating shaft driving unit rotates the rotating shaft about a vertical rotating axis, thereby swinging the arm. Furthermore, the rotating shaft drive unit moves the rotating shaft up and down in the vertical direction, thereby raising and lowering the arm. In response to the swing and lift of the arm, the first moving nozzle 9 moves horizontally and vertically.

The first moving nozzle 9 is connected to a processing liquid pipe 40 for guiding the processing liquid. When the processing liquid valve 50 interposed in the processing liquid pipe 40 is opened, the processing liquid is continuously sprayed downward from the first moving nozzle 9 . When the first moving nozzle 9 is located at the central position, the processing liquid is supplied to the central region of the upper surface of the substrate W when the processing liquid valve 50 is opened.

The treatment liquid contains a solute and a solvent. The treatment liquid solidifies or hardens when at least a part of the solvent contained in the treatment liquid volatilizes (evaporates). The treatment liquid solidifies or hardens on the substrate W, thereby forming a solid treatment film. The processing film takes in and holds the object to be removed existing on the substrate W when the processing liquid solidifies or hardens. The object to be removed is, for example, foreign matter such as fine particles adhering to the surface of the substrate W. As shown in FIG.

Here, "solidification" means, for example, that a solute is solidified by a force acting between molecules or between atoms accompanying volatilization of a solvent. The term "hardening" refers to solidification of a solute through chemical changes such as polymerization and crosslinking. Therefore, the so-called "solidification or hardening" refers to the "freezing" of a solute due to various factors.

In addition, the treatment film need not consist solely of solid components. As long as the processing film maintains a constant shape as a whole, it may be in a semi-solid state composed of both solid and liquid components. That is, it is not necessary to completely remove the solvent from the treatment liquid, and the solvent may remain in the treatment film.

The treatment liquid contains a polymer as a solute. The polymer contained in the treatment liquid is, for example, a first polymer having: a main chain in a solid state; Liquified by exposure to light.

The main chain of the first polymer is also maintained in a solid state after being irradiated with light. Therefore, the entire treatment film is in a solid state until light is irradiated from the light irradiation unit 8 . On the other hand, when the treatment film is irradiated with light from the light irradiation unit 8, a part of the treatment film is liquefied and the treatment film is split.

As shown in Figure 3, polymer 200 can be exemplified as the first polymer, and polymer 200 has in the molecule: main chain 201, which is composed of hydrocarbon groups; and side chain 202, which has an azophenyl group ( azobenzene group). The azophenyl group reversibly undergoes photoisomerization (photoisomerization) into a trans (trans) body and a cis (cis) body by being irradiated with light.

Specifically, the trans-isomer azophenyl group is changed to the cis-isomer by ultraviolet light, and the cis-isomer azophenyl group is changed to the trans-isomer by visible light or heat. When the azophenyl group is in the trans form, the side chain 202 is in a solid state. When the azophenyl group is in the cis form, the side chain 202 is in a liquid state. As the ultraviolet light for changing the azophenyl group to the cis-isomer, for example, ultraviolet light at 365 nm can be used. The wavelength of the ultraviolet light for changing the azophenyl group to the cis form is not limited to 365 nm.

Therefore, until the treated film is irradiated with ultraviolet light, the azophenyl group is in the trans form, and the whole system of the treated film is maintained in a solid state. On the other hand, when the treated film is irradiated with ultraviolet light, the azophenyl group changes to the cis isomer and a part of the treated film is liquefied. Thereby, the processing membrane is split.

The first polymer is not limited to the polymer 200 shown in FIG. 3 , as long as it has a solid main chain and side chains bonded to the main chain and liquefied by light irradiation. For example, the first polymer may also have an azobenzene derivative as a side chain.

Referring again to FIG. 2 , the second moving nozzle 10 is an example of a processing film removal liquid nozzle (processing film removal liquid supply unit) for supplying (discharging) pure water in a continuous flow toward the upper surface of the substrate W held by the rotary jig 5 Wait for the membrane removal solution. The processing film removal liquid is a liquid that pushes the processing film out of the substrate W without dissolving the processing film formed on the substrate W to remove the processing film.

The second moving nozzle 10 is moved in the horizontal direction and the vertical direction by the second nozzle moving unit 36 . The second moving nozzle 10 is movable in the horizontal direction between the center position and the home position (retreat position).

The second moving nozzle 10 faces the central region of the upper surface of the substrate W when located at the central position. The second moving nozzle 10 does not face the upper surface of the substrate W when located at the home position, and is located outside the processing cover 7 in plan view. The second moving nozzle 10 can approach the upper surface of the substrate W and retract upward from the upper surface of the substrate W by moving in the vertical direction.

The second nozzle moving unit 36 has the same configuration as the first nozzle moving unit 35 . That is, the second nozzle moving unit 36 may also include: an arm (not shown) coupled to the second moving nozzle 10 and extending horizontally; a rotation shaft (not shown) coupled to the arm and extending in a vertical direction extension; and a rotating shaft driving unit (not shown), which makes the rotating shaft lift or rotate.

The second moving nozzle 10 is connected to the processing film removal liquid piping 41 , and the processing film removal liquid piping 41 is used to guide the processing film removal liquid to the second moving nozzle 10 . When the processing film removal liquid valve 51 interposed in the processing film removal liquid pipe 41 is opened, the processing film removal liquid is continuously discharged downward from the discharge port of the second moving nozzle 10 . When the second moving nozzle 10 is located at the center position, the process film removal liquid is supplied to the central region of the upper surface of the substrate W when the process film removal liquid valve 51 is opened.

The treatment film removal liquid system sprayed from the second moving nozzle 10 can be, for example, pure water such as DIW (deionized water; deionized water), carbonated water, electrolyzed ionized water, hydrochloric acid water with a diluted concentration (for example, about 1 ppm to 100 ppm) , ammonia water, reduced water (hydrogen water) and the like at a diluted concentration (for example, about 1 ppm to 100 ppm).

The third moving nozzle 11 is an example of a residue dissolving liquid nozzle (residue dissolving liquid supply means) for supplying (discharging) a residue dissolving liquid such as an organic solvent toward the upper surface of the substrate W held by the rotary chuck 5 in a continuous flow.

The third moving nozzle 11 is moved in the horizontal direction and the vertical direction by the third nozzle moving unit 37 . The third moving nozzle 11 is movable in the horizontal direction between a center position and a home position (retreat position).

The third moving nozzle 11 faces the central region of the upper surface of the substrate W when located at the central position. The third moving nozzle 11 does not face the upper surface of the substrate W when located at the home position, and is located outside the processing cover 7 in plan view. The third moving nozzle 11 can approach the upper surface of the substrate W and retract upward from the upper surface of the substrate W by moving in the vertical direction.

The third nozzle moving unit 37 has the same configuration as the first nozzle moving unit 35 . That is, the third nozzle moving unit 37 may also include: an arm (not shown) coupled to the third moving nozzle 11 and extending horizontally; a rotation shaft (not shown) coupled to the arm and extending vertically extension; and a rotating shaft driving unit (not shown), which makes the rotating shaft lift or rotate.

The third moving nozzle 11 is connected to a residue dissolving liquid pipe 42 for guiding the residue dissolving liquid to the third moving nozzle 11 . When the residue dissolving liquid valve 52 interposed in the residue dissolving liquid pipe 42 is opened, the residue dissolving liquid is sprayed downward continuously from the discharge port of the third moving nozzle 11 . When the third moving nozzle 11 is located at the central position, the residue dissolving liquid is supplied to the central region of the upper surface of the substrate W when the residue dissolving liquid valve 52 is opened.

The residue dissolving liquid is a liquid that dissolves the residue of the processing film slightly remaining on the substrate W after the processing film removing liquid is supplied to the substrate W, and removes the residue of the processing film from the upper surface of the substrate W. Therefore, it is preferable that the residue dissolving solution system has compatibility with the treatment membrane removal solution. The so-called compatibility refers to the property that two types of liquids dissolve and mix with each other.

The residue dissolving liquid is preferably a low surface tension liquid having a surface tension lower than that of the treatment film removing liquid. In the substrate treatment described later, instead of drying the upper surface of the substrate W by spinning off the treatment film removal solution on the substrate W, the treatment film removal solution on the substrate W is replaced by the residue solution and then the substrate is shaken off. The residue above W is dissolved, thereby drying the upper surface of the substrate W. Therefore, if the residue dissolving liquid is a low surface tension liquid, the surface tension acting on the upper surface of the substrate W can be reduced when the upper surface of the substrate W is dried.

Organic solvents that function as a residue solution and a low surface tension liquid include, for example, IPA (isopropyl alcohol; isopropanol), HFE (hydrofluoroether; hydrofluoroether), methanol (methanole), ethanol (ethanol), acetone A liquid of at least one of (acetone), PGEE (Propylene glycol ethyl ether) and trans-1,2-dichloroethylene (Trans-1,2-Dichloroethylene), etc.

The organic solvent functioning as a residue dissolving liquid and a low surface tension liquid does not have to be composed of only monomer components, and may be a liquid mixed with other components. For example, a mixed solution of IPA and DIW, or a mixed solution of IPA and HFE may also be used.

FIG. 4 is a block diagram showing the electrical configuration of main parts of the substrate processing apparatus 1 . The controller 3 is equipped with a microcomputer, and controls the control objects included in the substrate processing apparatus 1 in accordance with a predetermined control program.

Specifically, the controller 3 includes a processor (CPU (Central Processing Unit; Central Processing Unit)) 3A and a memory 3B storing a control program. The controller 3 is configured to execute various controls for substrate processing by executing a control program through the processor 3A.

In particular, the controller 3 is programmed to control the transfer robot IR, CR, the rotation motor 23, the pin opening and closing unit 24, the first nozzle moving unit 35, the second nozzle moving unit 36, the third nozzle moving unit 37, the shield lifting unit 74. Lamp energization unit 85 , opposing member lifting unit 61 , opposing member rotating unit 62 , processing liquid valve 50 , processing film removal liquid valve 51 and residue dissolving liquid valve 52 . The valve is controlled by the controller 3 , thereby controlling whether the processing fluid is ejected from the corresponding nozzle and the discharge flow rate of the processing fluid ejected from the corresponding nozzle.

FIG. 5 is a flowchart illustrating an example of substrate processing performed by the substrate processing apparatus 1 . FIG. 5 mainly shows the processing realized by the controller 3 executing the program. 6A to 6G are schematic diagrams for explaining the state of each process of substrate processing.

As shown in FIG. 5, in the substrate processing performed by the substrate processing apparatus 1, for example, a processing liquid supply step (step S1), a processing film forming step (step S2), a light irradiation step (step S3), and a processing film removal step are sequentially performed. Step (step S4), residue dissolving step (step S5), and spin drying (step S6).

The following mainly refers to FIG. 2 and FIG. 5 . Reference is made to Figures 6A to 6G as appropriate.

First, the unprocessed substrate W is carried in from the carrier C to the processing unit 2 by the transfer robots IR and CR (see FIG. 1 ), and is transferred to the rotary jig 5 . Thereby, the substrate W is held horizontally by the rotary jig 5 (substrate holding step).

When carrying in the substrate W, the facing member 6 is arranged at the retracted position, and the energization system of the plurality of lamps 80 is turned off. The retracted position of the facing member 6 is, for example, an upper position, and any moving nozzle may be a position where each moving nozzle can pass between the facing member 6 and the substrate W. FIG.

The holding of the substrate W by the autorotation jig 5 continues until the spin-drying step (step S6 ) is completed. During the period from the start of the substrate holding process to the end of the spin-drying process (step S6), the protective cover elevating unit 74 adjusts the heights of the first protective cover 71A and the second protective cover 71B so that at least one protective cover 71 is located at the upper position. Location. The autorotation jig 23 rotates the autorotation base 21 in a state where the substrate W is held by the autorotation jig 5 . Thereby, rotation of the substrate W held horizontally is started (substrate rotation step).

Next, after the transfer robot CR retreats to the outside of the processing unit 2, a processing liquid supply process for supplying the processing liquid to the upper surface of the substrate W is performed (step S1). Specifically, the first nozzle moving unit 35 moves the first moving nozzle 9 to the processing position. The processing position of the first moving nozzle 9 is, for example, a central position.

The processing liquid valve 50 is opened in a state where the first moving nozzle 9 is located at the processing position. Thereby, as shown in FIG. 6A , the processing liquid is supplied (discharged) from the first moving nozzle 9 toward the central region of the upper surface of the substrate W in the rotating state (processing liquid supply step, processing liquid discharge step). The processing liquid supplied to the upper surface of the substrate W spreads over the entire substrate W by centrifugal force. Thereby, a liquid film 101 (processing liquid film) of the processing liquid is formed on the substrate W (processing liquid film forming step).

The treatment liquid system is supplied from the first moving nozzle 9 for a predetermined time, for example, for 2 seconds to 4 seconds. In the processing liquid supply process, the substrate W is rotated at a predetermined processing liquid rotation speed, for example, 10 rpm to 1500 rpm.

Next, the processing film forming process shown in FIGS. 6B and 6C is performed (step S2 ). In the processing film forming step, the processing liquid on the substrate W is solidified or cured, and the processing film 100 is formed on the upper surface of the substrate W (see FIG. 6C ).

In the processing film forming step, the thickness of the liquid film 101 of the processing solution on the substrate W is reduced (processing solution thinning step, processing solution spin off step). Specifically, the treatment liquid valve 50 is closed. Thereby, as shown in FIG. 6B , supply of the processing liquid to the substrate W is stopped. Then, the first moving nozzle 9 is moved to the initial position by the first nozzle moving unit 35 .

As shown in FIG. 6B , in the processing liquid thinning step, since the substrate W is rotated while the supply of the processing liquid to the upper surface of the substrate W is stopped, part of the processing liquid is removed from the upper surface of the substrate W. Thereby, the thickness of the liquid film 101 on the substrate W becomes an appropriate thickness.

The centrifugal force caused by the rotation of the substrate W not only removes the processing liquid from the upper surface of the substrate W, but also acts on the gas contacting the liquid film 101 . The air flow of the gas from the center side of the substrate W toward the peripheral side is formed by the action of the centrifugal force. By this gas flow, the gaseous solvent that contacts the liquid film 101 is excluded from the atmosphere that contacts the substrate W. FIG. Therefore, evaporation (volatilization) of the solvent from the processing liquid on the substrate W is promoted, and the processing film 100 is formed as shown in FIG. 6C (solvent evaporation step, processing film forming step). In the processing film forming step, the rotation motor 23 functions as an evaporation means (evaporation promoting means) for evaporating the solvent in the processing liquid. The rotation motor 23 is an example of a processing film forming unit.

In the processing film forming step, the rotation motor 23 changes the rotation speed of the substrate W to a predetermined processing film forming speed. The processing film forming speed is, for example, 300 rpm to 1500 rpm. The rotation speed of the substrate W may be kept constant in the range of 300 rpm to 1500 rpm, or may be appropriately changed in the range of 300 rpm to 1500 rpm in the middle of the process of forming the film. The processing film forming process is performed for a predetermined time, for example, 30 seconds.

Unlike this substrate treatment, in the process of forming the process film, the treatment liquid may not be removed by centrifugal force, or the process film 100 may be formed only by evaporation of the solvent. In this case, the consumption of the treatment liquid can be suppressed.

Next, a light irradiation process for irradiating light to the processing film 100 on the substrate W is performed (step S3 ).

Specifically, the facing member lifting unit 61 arranges the light irradiation unit 8 at the irradiation position. The irradiation position is, for example, a position where the entire upper surface of the substrate W is evenly irradiated with the light emitted from the light irradiation unit 8 . Furthermore, the plurality of lamps 80 of the light irradiation unit 8 are energized by the lamp energization unit 85 . Thereby, as shown in FIG. 6D , the entire processing film 100 is irradiated with light by the light irradiating unit 8 (light irradiating step). The treatment film 100 is split on the substrate W by light irradiation (treatment film splitting step). The processing film 100 is split to form a sheet of the processing film 100 (processing sheet) (processing sheet forming process).

In the light irradiation step, the rotation motor 23 changes the rotation speed of the substrate W to a predetermined processing film splitting speed. The processing membrane splitting speed is, for example, 300 rpm. Light irradiation is performed, for example, for 30 seconds.

Next, a process film removal step (step S4) is performed. The process film removal process is to remove the process film 100 from the surface of the substrate W by supplying a process film removal liquid toward the upper surface of the substrate W (strictly speaking, the surface of the process film 100). Remove the upper surface.

Specifically, the opposing member raising and lowering unit 61 moves the opposing member 6 to the retracted position, and the lamp energization unit 85 shuts off energization of the plurality of lamps 80 . The second nozzle moving unit 36 moves the second moving nozzle 10 to the processing position in a state where the opposing member 6 is located at the withdrawn position. The processing position of the second moving nozzle 10 is, for example, a central position.

The processing film removal liquid valve 51 is opened in a state where the second moving nozzle 10 is located at the processing position. Thereby, as shown in FIG. 6E , the processing film removal liquid is supplied (discharged) from the second moving nozzle 10 toward the central region of the upper surface of the substrate W in the rotating state (processing film removal liquid supply step, processing film removal liquid discharge step) .

The processing film removal liquid supplied to the upper surface of the substrate W spreads over the entire substrate W by centrifugal force. The processing film removal liquid that has been applied to the processing film 100 enters between the substrate W and the processing film 100 through the gap between the film sheets of the processing film 100, and the processing film 100 is peeled off from the substrate W (processing film peeling process) . As shown in FIG. 6F , the treatment film removal solution is continuously supplied, and the treatment film 100 is pushed out from the upper surface of the substrate W by the flow of the treatment film removal solution and removed (treatment film removal step). The processing film 100 is removed from the upper surface of the substrate W while maintaining the object to be removed. The second moving nozzle 10 is an example of a processing film removal unit.

In the process film removal step (step S4), the substrate W is rotated at a predetermined removal rotation speed, for example, 800 rpm. The supply of the process film removal liquid is performed for, for example, 30 seconds.

Next, a residue dissolving step (step S5 ) is performed. The residue dissolving step is to supply a residue dissolving liquid such as an organic solvent to remove the residue of the processing film 100 from the upper surface of the substrate W.

Specifically, the process film removal liquid valve 51 is closed, and the second nozzle moving unit 36 moves the second moving nozzle 10 to the withdrawn position. Next, the third nozzle moving unit 37 moves the third moving nozzle 11 to the processing position. The processing position of the third moving nozzle 11 is, for example, a central position.

The residue solution valve 52 is opened in a state where the third moving nozzle 11 is located at the processing position. Thereby, as shown in FIG. 6G , the residue solution is supplied (discharged) from the third moving nozzle 11 toward the central region of the upper surface of the rotating substrate W (residue solution supply step, residue solution discharge step).

The residue dissolving liquid supplied to the upper surface of the substrate W receives the centrifugal force, spreads radially, and spreads over the entire upper surface of the substrate W. Even after the processing film is peeled off from the substrate W by the processing film removal solution and removed from the substrate W, residues of the processing film may remain on the upper surface of the substrate W. The residue dissolving liquid supplied to the upper surface of the substrate W dissolves such residues. The residue solution in which the residue has been dissolved is discharged from the periphery of the upper surface of the substrate W by the centrifugal force. Thereby, the residue of the process film on the substrate W is dissolved (residue dissolving step).

In the residue-dissolving liquid supply process, the residue-dissolving liquid is sprayed from the fourth moving nozzle 12 for a predetermined period of time, for example, 30 seconds. In the residue dissolving step (step S5 ), the substrate W is rotated at a predetermined residue dissolving rotation speed, for example, 300 rpm.

Next, a spin-drying process (step S6 ) is performed. The spin-drying process is to rotate the substrate W at a high speed to dry the upper surface of the substrate W. Specifically, the residue solution valve 52 is closed. Thereby, supply of the residue dissolving solution to the upper surface of the substrate W is stopped. Next, the third nozzle moving unit 37 moves the third moving nozzle 11 to the initial position.

Next, the rotation motor 23 accelerates the rotation of the substrate W to rotate the substrate W at a high speed. The substrate W in the spin-drying process is rotated at a drying speed, for example, 1500 rpm. The spin-drying process is performed for a predetermined time, for example, 30 seconds. Thereby, a large centrifugal force acts on the residue solution on the substrate W, and the residue solution on the substrate W is thrown away to the periphery of the substrate W.

Next, the rotation motor 23 stops the rotation of the substrate W. The shield lifting unit 74 moves the first shield 71A and the second shield 71B to the lower position.

The transfer robot CR enters the processing unit 2 , picks up the processed substrate W from the chuck pin 20 of the autorotating chuck 5 , and carries it out to the outside of the processing unit 2 . The substrate W is transferred from the transfer robot CR to the transfer robot IR, and is accommodated in the carrier C by the transfer robot IR.

Next, the state of the upper surface of the substrate W during the substrate processing will be described in detail with reference to FIGS. 7A to 7D . 7A to 7D are schematic diagrams for explaining the state of the vicinity of the upper surface of the substrate W during substrate processing. For convenience of description, the size relationship between the light irradiation unit 8 and the substrate W is changed from FIG. 2 in FIG. 7B (the same applies to FIG. 8 and FIG. 15B described later).

As shown in FIG. 7A , the processing film 100 formed in the processing film forming step (step S2 ) holds objects 105 to be removed such as particles attached to the surface layer portion 150 of the substrate W. The treatment film 100 is mainly formed by polymer. The treatment film 100 becomes a solid state by at least a portion of the solvent evaporating.

Next, referring to FIG. 7B , the treatment film 100 is split by irradiating the treatment film 100 with light (treatment film splitting step, light irradiation step). In other words, cracks are generated in the process film 100 (crack generation process). The processing film 100 is formed into a film sheet by splitting. That is, a membrane (processing membrane 110 ) of the processing membrane 100 is formed (processing membrane splitting process).

The processing film 110 is larger than the object to be removed 105 . The object to be removed 105 is approximately spherical and has a diameter of, for example, 10 nm. In the case where the processing membrane 110 is assumed to be a cube, it is preferable that the length of one side of the processing membrane 110 is not less than 20 nm and not more than several μm.

Next, referring to FIG. 7C , after the processing film 100 is split, a processing film removal solution is supplied to the upper surface of the substrate W. The processing film removal liquid that has landed on the surface of the processing film 100 reaches the interface between the processing film 110 and the substrate W through the gap G1 between the processing films 110 .

The processing film removal solution that has reached the vicinity of the upper surface of the substrate W slightly dissolves the portion near the upper surface of the substrate W in the processing film 110 . Thereby, as shown in the enlarged view of FIG. 7C , the processing film removal liquid enters into the upper surface of the processing film 110 and the substrate W while gradually dissolving the solid processing film 110 near the upper surface of the substrate W. Gap G2 between surfaces (removal liquid entry procedure). Thereby, as shown in FIG. 7D , the processing film 110 is peeled from the upper surface of the substrate W (liquid peeling process, process film peeling process, film peeling process).

By continuously supplying the processing film removal liquid, the processing film 110 is rinsed with the processing film removal liquid while holding the object 105 to be removed. In other words, the processing film 110 holding the object to be removed 105 is pushed out of the substrate W and removed from the upper surface of the substrate W (processing film removal step, object removal step). Thereby, the upper surface of the board|substrate W can be cleaned well.

The processing sheet 110 is peeled and removed from the upper surface of the substrate W while maintaining the bulk state without detaching the object to be removed 105 . The removal of the processing film 100 from the upper surface of the substrate W is facilitated by the centrifugal force of the substrate W.

According to the first embodiment, the following effects are achieved.

According to the first embodiment, before the treatment film removal solution is supplied to the treatment film 100, the treatment film 100 is split by light irradiation. The processing membrane 100 becomes easy to receive the physical force (energy) by the processing membrane removal liquid by splitting. Therefore, the split processing film 100 is pushed out from the upper surface of the substrate W and discharged from the substrate W by the processing film removal liquid. Therefore, since the treatment membrane 100 can be split before the supply of the treatment membrane removal liquid, it is not necessary to split the treatment film 100 by the treatment membrane removal liquid. In this way, the processing film 100 can be split by dry processing without supplying liquid to the processing film 100 .

Furthermore, according to the first embodiment, the processing film 100 is split to form the processing film piece 110 which is larger than the object to be removed 105 . Therefore, even after the processing film 100 is split, the object to be removed 105 can be prevented from coming off from the processing film sheet 110 . Therefore, the object to be removed 105 can be removed from the upper surface of the substrate W satisfactorily.

Furthermore, according to the first embodiment, the processing film 100 is peeled off from the upper surface of the substrate W by the processing film removing liquid. According to this substrate processing method, even in the case where the processing film 100 is peeled off without being irradiated with light, it can be peeled off from the upper surface of the substrate W by the processing film removal liquid.

In addition, according to the first embodiment, the treatment film 100 contains a polymer 200 (refer to FIG. 3 ), and the polymer 200 has: a main chain 201 in a solid state; To be liquefied by exposure to light. Therefore, a part (side chain 202 ) of the polymer 200 is liquefied by irradiation of light, thereby splitting the treatment film 100 . Therefore, a part of the processing film 100 can be liquefied by the irradiation of light while maintaining most of the processing film 100 in a solid state. Therefore, the treatment membrane 100 can be split before supplying the treatment membrane removal solution.

In the above substrate processing ( FIGS. 7A to 7D ), the processing film 100 is split by irradiation of light. However, light irradiation not only splits the processing film 100 but also peels the processing film 100 from the upper surface of the substrate W. FIG. FIG. 8 is a schematic diagram for explaining the state near the upper surface of the substrate W during substrate processing, and shows a state in which the processing film 100 is peeled off from the upper surface of the substrate W by irradiation with light.

Specifically, as shown in FIG. 8 , in the light irradiation step (step S3 ), the treatment film 100 can be peeled off from the upper surface of the substrate W while splitting the treatment film 100 (treatment film splitting step, irradiation peeling step). . In this case, it is not necessary to split the treatment film 100 by the treatment film removal liquid and to peel off the treatment film 100 in the subsequent treatment film removal process (step S4 ). Therefore, the processing film 100 can be removed from the upper surface of the substrate W using a processing film removing liquid that hardly has the property to dissolve the processing film 100 . Thereby, the selectivity of the combination of the treatment liquid and the treatment membrane removal liquid is improved.

Since the processing film 100 has already been peeled off by light irradiation, the processing film removal liquid flowing along the upper surface of the substrate W does not need to impart such a large energy to the processing film 100 to peel off the processing film 100 . Therefore, the processing film 110 can be well rinsed from the upper surface of the substrate W by the processing film removal liquid. Accordingly, the residue of the processing film 100 can be reduced. Therefore, the residue dissolving step can be omitted.

Furthermore, when the processing film 100 is removed, the time during which the processing film 100 is exposed to the processing film removal solution can be shortened. Therefore, as the treatment film removal solution, an organic solvent such as IPA for slightly dissolving the treatment film 100 , or a mixed solution of water and an organic solvent can be used.

As mentioned above, the splitting and peeling of the processing film 100 may be performed simultaneously; alternatively, the processing film 110 may be peeled off from the substrate W by continuously irradiating light after the splitting of the processing film 100 .

Unlike the above-described embodiment, the polymer contained as a solute in the treatment liquid may be a second polymer that can be decomposed by irradiation with light. In this case, the treatment film 100 integrated due to the presence of the second polymer fails to maintain the shape due to the decomposition of the second polymer, thereby splitting. Therefore, the treatment membrane 100 can be split before supplying the treatment membrane removal solution.

Specifically, the second polymer is decomposed by cutting a part of shared bonds (for example, C-O bonds, C-C bonds) in the molecule of the second polymer. The second polymer system is, for example, polyisoprene (polyisoprene), PMMA (polymethylmethacrylate; polymethyl methacrylate), polyethylene terephthalate (polyethylene terephthalate; PET) and the like.

As the second polymer, besides these polymers, for example, as shown in FIG. 9A , a polymer 250 having CO bonds in the molecule can also be used. FIG. 9A is a schematic diagram illustrating the polymer 250 . In polymer 250, R ¹ and R ² are hydrocarbon groups. Hereinafter, R ¹ and R ² are collectively expressed as a hydrocarbon group R.

The C-O bonding system of polymer 250 was cleaved by UV light. The wavelength of the ultraviolet light irradiated to the polymer 250 is preferably greater than 339 nm and less than 374 nm. In this way, the C-O bond can be selectively cleaved. The wavelength of the ultraviolet light is more preferably 374nm.

FIG. 9B is a schematic diagram illustrating the mechanism of decomposition of the polymer 250 . As shown in FIG. 9B , when the C—O bond is cleaved by ultraviolet light, the hydrocarbon group (RH) in the polymer 250 is changed into a radical (R.). Next, the free radicals (R.) react with oxygen in the atmosphere to form oxy radicals (ROO.). Next, the oxygen free radical (ROO.) extracts a hydrogen atom from the new hydrocarbon group (RH), thereby forming a free radical (R.) and a hydroperoxide (ROOH). In this way, since the cleavage of the C—O bond of the polymer 250 forms a decomposition product (R—COOH) having a hydrophilic group (—COOH) at the end, the hydrophilicity of the treated membrane is improved.

FIG. 9C is a schematic diagram for explaining how the treatment film 100 containing the second polymer holds the object 105 to be removed. The object to be removed 105 attached to the upper surface of the substrate W is hydrophobic. Therefore, as shown in FIG. 9C , the polymer 250 surrounds the object to be removed 105 attached to the upper surface of the substrate W with the hydrocarbon group R, thereby holding the object to be removed 105 . By irradiating the processing film 100 with light, C-O is cut off only on the outside of the hydrocarbon group R in a state where the object to be removed 105 is surrounded by the hydrocarbon group R. For example, the polymer 250 is cut at the cut position CP shown in FIG. 9C.

The decomposition product 251 is formed by the decomposition of the polymer 250, and the decomposition product 251 is composed of a hydrocarbon compound (hydrocarbon compound) with a hydrophilic group (-COOH) bonded to its terminal. Even after the decomposed product 251 is formed, the hydrocarbon group R maintains a state surrounding the object to be removed 105 adhering to the upper surface of the substrate W. As shown in FIG. Therefore, it is possible to form the processing film 110 larger than the object to be removed 105 . Thereby, the object to be removed 105 can be strongly held by the processing film 110 .

In addition, since the terminal of the decomposed product 251 is bonded with a hydrophilic group, the treatment membrane 110 is easily washed by the treatment membrane removal solution containing water.

If the polymer 250 is designed so that the hydrocarbon group R becomes longer than the expected size (for example, 10 nm) of the object 105 to be removed, the object 105 to be removed can be strongly held by the decomposed product 251 .

By adjusting the intensity and time of the irradiated light, the degree of severing of the shared bond to be severed can be controlled.

In the case of using the second polymer as the solute contained in the treatment liquid, the substrate treatment shown in FIG. 5 can also be performed.

In the case where the treatment liquid contains a crosslinking agent for crosslinking the second polymers with each other by the light emitted from the light irradiation unit 8, as shown in FIG. 10A and FIG. The light irradiation of the light hardens the liquid film 101 of the processing liquid.

10A and 10B are schematic diagrams for explaining the state of a process film forming step (step S2 ) in a modification example of substrate processing. In this substrate processing, after the supply of the processing liquid to the substrate W is stopped, the opposing member 6 is arranged at the processing position, and the plurality of lamps 80 are energized. Thereby, as shown in FIG. 10A , the liquid film 101 is irradiated with light. By light irradiation, the second polymer in the liquid film 101 reacts with the crosslinking agent to crosslink the second polymers (light crosslinking process). As a crosslinking agent, for example, pyrene or anthracene can be used. As shown in FIG. 10B , the liquid film 101 on the substrate W is changed into a solid process film 100 by crosslinking the second polymers with each other and curing the second polymers. In this case, the light irradiation unit 8 functions as a process film forming unit.

According to this method, the second polymers are hardened by crosslinking the second polymers with each other by a crosslinking agent. Thereby, compared with the case where the second polymer is not crosslinked, the hardness of the treated film 100 can be increased. By increasing the hardness of the processing film 100 , the object to be removed 105 can be strongly held by the processing film 100 . Therefore, the object to be removed 105 can be excluded to the outside of the substrate W together with the processing film 110 . Therefore, the object to be removed 105 can be removed from the upper surface of the substrate W satisfactorily.

Next, a modified example of the light irradiation unit 8 will be described using FIGS. 11 and 12 . FIG. 11 is a schematic diagram illustrating a first variation of the light irradiation unit 8 . FIG. 12 is a schematic diagram for illustrating a second variation of the light irradiation unit 8 .

For example, in the first variation shown in FIG. 11 , the light irradiation unit 8 can also be configured to move between the irradiation position and the initial position (retreat position) by the lamp moving unit 86 provided in the chamber 4 .

The irradiation position is the position where the light irradiation unit 8 faces the upper surface of the substrate W (the position shown by the two-dotted chain line in FIG. 11 ). The irradiation position is a position where light can be irradiated toward the upper surface of the substrate W from the light irradiation unit 8 . The retracted position is a position where no light is irradiated from the light irradiation unit 8 to the upper surface of the substrate W (the position shown by the solid line in FIG. 11 ). The light irradiating unit 8 faces the upper surface of the substrate W when the light irradiating unit 8 is located at the irradiating position. When the light irradiation unit 8 is located at the home position, the light irradiation unit 8 does not face the upper surface of the substrate W but is located outside the processing cover 7 in plan view.

In the configuration shown in FIG. 11 , the light irradiation unit 8 includes a lamp 80 and a lamp holder 81 for accommodating the lamp 80 . The lamp moving unit 86 includes: an arm 87 supporting the lamp holder 81 ; a rotating shaft 89 connected to the arm 87 and extending vertically; and an arm moving unit 88 moving the arm 87 via the rotating shaft 89 . The arm moving unit 88 includes, for example: a motor that rotates the rotation shaft 89 around the center axis (rotation axis A2) of the rotation shaft 89 so that the arm 87 moves horizontally; Lift together.

In the first modification example, the upper surface of the substrate W can be irradiated with light while moving the light irradiation unit 8 in a direction parallel to the upper surface of the substrate W. FIG.

In a second modification example shown in FIG. 12 , the lamp 80 has a rod shape and is arranged in an arm 87 extending linearly. In this case, light rays can be irradiated to a wider range than that of the first modification shown in FIG. 11 .

[Second Embodiment]

The main difference between the substrate processing apparatus 1P of the second embodiment and the substrate processing apparatus 1 of the first embodiment is that the substrate processing apparatus 1P is configured to perform liquid processing using liquid and irradiation of light with separate processing units.

FIG. 13 is a schematic diagram illustrating the configuration of a wet processing unit 2W included in a substrate processing apparatus 1P according to the second embodiment. FIG. 14 is a schematic diagram illustrating the structure of a dry processing unit 2D included in a substrate processing apparatus 1P according to the second embodiment. As shown in FIG. 13 , the difference between the wet processing unit 2W and the processing unit 2 of the first embodiment is that no light irradiation unit 8 is provided.

Referring to FIG. 14 , the dry processing unit 2D includes a chamber 300 , a substrate holding table 301 , a light irradiation unit 8P, and a mask placement unit 302 .

The chamber 300 accommodates the substrate holding table 301 and the light irradiation unit 8P. A carry-out port 300a is formed in the chamber 300, and the carry-out port 300a is used for carrying in and carrying out the substrate W by the transfer robot CR. The chamber 300 is provided with a shutter unit 300b for opening and closing the input/output port 300a. The substrate W on which the processing film 100 is formed on the upper surface is carried into the chamber 300 .

The substrate holding table 301 has a horizontal table surface 301a (upper surface). The substrate holding table 301 holds the substrate W placed on the table surface 301 a.

The light irradiation unit 8P includes a light generating unit 310 , a light path adjusting unit 311 and a light scanning unit 312 . The light beam generator 310 has a light source such as a semiconductor laser or a gas laser, and emits a light beam L. As shown in FIG. As the light beam L, for example, ultraviolet rays can be used.

The light path adjusting part 311 guides the light emitted from the light generating part 310 to the light scanning part 312 . The light path adjustment unit 311 includes, for example, a mirror. The light scanning unit 312 changes the light path of the light beam L incident from the light generating unit 310 via the light path adjusting unit 311 . The light beam scanning unit 312 changes the incident position of the light beam L on the substrate W held by the substrate holding unit 301 every moment. Thereby, the entire processing film 100 on the substrate W is irradiated with light.

The mask loading unit 302 is disposed between the light scanning unit 312 and the substrate holding table 301 . A photomask 303 corresponding to the concavo-convex pattern formed on the upper surface of the substrate W is placed on the mask loading unit 302 . When the photomask 303 is placed on the mask mounting unit 302, light is irradiated from the light irradiation unit 8P, whereby the light beam L directed toward the substrate W from the light scanning unit 312 is partially shielded, and the processing film on the substrate W is partially shielded. Exposure is performed in response to the mask pattern from the mask 303 . In addition, instead of scanning the light beam L like a laser beam, a configuration may be adopted in which light from a light source for emitting a light beam having a wider cross-sectional area enters the entire mask 303, and the processing film 100 total exposures.

The substrate processing of the second embodiment is the same as that of the first embodiment (see FIG. 5 ). In the substrate processing of the second embodiment, after the processing liquid supply step (step S1) and the processing film formation step (step S2) are performed in the wet processing unit 2W, the substrate W on which the processing film 100 is formed is carried into the dry processing unit. 2D. After performing the light irradiation process (step S3 ) in the dry processing unit 2D, the substrate W is transferred to the wet processing unit 2W. Next, the processing film removal process (step S4 ) to the spin-drying process (step S6 ) are performed in the wet processing unit 2W.

15A to 15D are schematic diagrams for explaining the state of the vicinity of the upper surface of the substrate W in the substrate processing according to the second embodiment.

As shown in FIG. 15A , a fine concavo-convex pattern 160 may be formed on the surface layer of the substrate W used in the substrate processing of the second embodiment. The concavo-convex pattern 160 includes fine convex structures 161 formed on the surface of the substrate W, and recesses (grooves) 162 formed between adjacent structures 161 .

The surface of the concave-convex pattern 160 , that is, the surface of the structure 161 (convex portion) and the concave portion 162 forms a pattern surface 165 having concavo-convex. The pattern surface 165 is included on the surface of the substrate W. As shown in FIG. The surface 161a of the structure 161 is constituted by the front end surface 161b (top) and the side surface 161c, and the surface of the recess 162 is constituted by the bottom surface 162a (bottom). In the case where the structure body 161 is cylindrical, a concave portion is formed in the inner direction.

The structure 161 may include an insulator film, or may include a conductor film. In addition, the structure 161 may be a laminated film in which a plurality of films are laminated.

As shown in FIG. 15A , the processing film 100 formed in the processing film forming step (step S2 ) holds the object to be removed 105 attached to the surface layer portion 150 of the substrate W. As shown in FIG. The treatment film 100 is mainly formed by polymer. The treatment film 100 becomes a solid state by at least a part of the solvent evaporating.

Next, referring to FIG. 15B , light is irradiated to the processing film 100 through the photomask 303 . In FIG. 15B , the portion formed on the front end surface 161 b of the structure 161 in the process film 100 is shielded by the photomask 303 . That is, the portion formed on the front end surface 161b of the structure body 161 in the process film 100 is the non-exposed portion 100A. Therefore, only the portion located between the structures 161 in the processing film 100 is exposed. A portion located between the structures 161 in the processing film 100 is an exposed portion 100B.

Only the exposed portion 100B of the process film 100 is split by light irradiation using the photomask 303 (process film splitting step, light irradiation step). The exposed portion 100B of the processing film 100 is formed into a film shape by splitting. That is, the film piece (processing film piece 110) of the processing film 100 is formed in the exposure part 100B (processing film piece splitting process).

Next, referring to FIG. 15C , after the processing film 100 is split, a processing film removal solution is supplied to the upper surface of the substrate W. The processing film removal liquid that has landed on the surface of the processing film 100 reaches the interface between the processing film 110 and the substrate W through the gap G1 between the processing films 110 .

The processing film removal solution that has reached the vicinity of the upper surface of the substrate W slightly dissolves the portion near the upper surface of the substrate W in the processing film 110 . Thereby, as shown in the enlarged view of FIG. 15C , the processing film removal liquid enters into the upper surface of the processing film 110 and the substrate W while gradually dissolving the solid processing film 110 near the upper surface of the substrate W. Gap G2 between surfaces (removal liquid entry procedure). Thereby, as shown in FIG. 15D , the processing film 110 is peeled off from the upper surface of the substrate W (processing film peeling process, film peeling process).

The processing film removal liquid is continuously supplied, whereby only the exposed portion 100B of the processing film 100 is removed. The exposed portion 100B is rinsed with the treatment film removal liquid while maintaining the object to be removed 105 . In other words, the processing film 110 holding the removal object 105 is pushed out to the outside of the substrate W and removed from the upper surface of the substrate W (processing film removal step, removal object removal step). Thereby, the upper surface of the board|substrate W can be cleaned well.

On the other hand, since the non-exposed portion 100A of the processing film 100 is not split by light irradiation, it is not peeled off by the processing film removing liquid. The non-exposed portion 100A remains on the pattern surface 165 as a protective film. Therefore, oxidation of the portion covered with the protective film in the pattern surface 165 can be suppressed.

Although it is intended to avoid exposure on the upper surface of the substrate W, it is conceivable that the subsequent processing is performed on the entire upper surface of the substrate W. In such a case, as shown in FIG. 16 , both the non-exposed portion 100A and the exposed portion 100B may be removed by a process film removing liquid after light irradiation using the photomask 303 .

Unlike the second embodiment, as long as it is a method of supplying a liquid for breaking the treatment membrane, it is difficult to break only a part of the treatment membrane.

According to the second embodiment, the light irradiation step includes the step of irradiating light toward the upper surface of the substrate W through the photomask 303 . Therefore, since the processing film 100 is exposed according to the mask pattern of the photomask 303 , only a part of the processing film 100 can be irradiated with light. For example, it is useful when there is a portion to be avoided from exposure on the upper surface of the substrate W and when the processing film 100 is to be partially left on the substrate W as a protective film.

In the second embodiment, not only the splitting of the processing film 100 is caused by irradiating the processing film 100 with light, but also the peeling of the processing film 100 is caused.

The second embodiment can also achieve the same effects as the first embodiment.

[Third Embodiment]

FIG. 17 is a schematic diagram for explaining the structure of a substrate processing apparatus 1Q according to the third embodiment. The main difference between the substrate processing apparatus 1Q of the third embodiment and the substrate processing apparatus 1 of the first embodiment is that the formation of the processing film 100 and the processing of the processing film 100 are performed in the substrate processing apparatus 1Q in separate chambers 4A and 4B. remove.

The substrate processing apparatus 1Q includes: a film formation processing unit 2A for forming the processing film 100 ; and a film removal processing unit 2B for removing the processing film 100 .

The film formation processing unit 2A includes: a rotation jig 5A that rotates the substrate W while holding the substrate W horizontally; a first moving nozzle 9 that supplies the processing liquid to the upper surface of the substrate W; and a chamber 4A that The rotation jig 5A and the first moving nozzle 9 are accommodated. The autorotation jig 5A has the same configuration as the autorotation jig 5 .

An entrance and exit 4Aa are formed in the chamber 4A, and the entrance and exit 4Aa are used for carrying the substrate W in and carrying the substrate W out by the transfer robot CR. The chamber 4A is provided with a shutter unit 4Ab for opening and closing the entrance 4Aa.

The film formation processing unit 2A further includes a light irradiation unit 8 for irradiating light to the substrate W passing through the inlet and outlet 4Aa of the chamber 4A. The light irradiation unit 8 includes, for example, lamps (light sources) for emitting infrared rays, ultraviolet rays, visible light, and the like. The light irradiation unit 8 is installed on the side wall of the chamber 4A.

The film removal processing unit 2B includes: a self-rotating jig 5B that rotates the substrate W while holding the substrate W horizontally; a second moving nozzle 10 that supplies the stripping liquid to the upper surface of the substrate W; and a third moving nozzle 11 , is to supply the cleaning solution to the upper surface of the substrate W; The autorotation jig 5B has the same configuration as the autorotation jig 5 .

An entrance and exit 4Ba are formed in the chamber 4B, and the entrance and exit 4Ba are used for carrying the substrate W in and carrying the substrate W out by the transfer robot CR. The chamber 4B is provided with a shutter unit 4Bb for opening and closing the entrance 4Ba.

In the substrate processing performed by the substrate processing apparatus 1Q of the third embodiment, after the substrate W is carried into the chamber 4A of the film formation processing unit 2A by the transfer robot CR, the processing shown in FIG. 5 is performed in the chamber 4A. Liquid supply process (step S1) and process film formation process (step S2). During execution of the processing liquid supply step and the processing film forming step, the substrate W is held by the rotary chuck 5A in the chamber 4A (first substrate holding step).

Thereafter, as shown in FIG. 17 , the substrate W on which the liquid film 101 of the processing liquid is formed on the upper surface is carried out from the chamber 4A of the film formation processing unit 2A by the transfer robot CR (carrying out process). When the substrate W passes through the entrance 4Aa of the chamber 4A, the light irradiation unit 8 irradiates the processing film 100 with light to split the processing film 100 . That is, the light irradiation process (step S3) is performed in a carrying-out process. The substrate W is carried into the chamber 4B of the film removal processing unit 2B in a state in which the processing film 100 is split (carrying-in step). The transport robot CR is an example of a transport unit.

Next, a processing film removal step (step S4 ), a residue dissolution step (step S5 ), and a spin-drying step (step S6 ) are performed in the chamber 4B. That is, the substrate W is held by the rotary chuck 5B in the chamber 4B from the start of the process film removal step (step S4 ) to the end of the spin drying step (step S6 ) (second substrate holding step).

According to the third embodiment, the same effect as that of the first embodiment is achieved. Furthermore, according to the third embodiment, in the configuration in which the formation of the processing film 100 and the removal of the processing film 100 are performed in the separate chambers 4A, 4B, the processing film 100 can be split during the conveyance of the substrate W (processing film splitting). process). Therefore, the time required for substrate processing can be shortened.

Although not shown in FIG. 17 , a processing cover 7 may be provided in the film formation processing unit 2A and the film removal processing unit 2B (see FIG. 2 ).

[Other Embodiments]

The present invention is not limited to the embodiments described above, and may be further implemented in other forms.

For example, both the first polymer and the second polymer may be contained in the treatment liquid. In this case, the treatment film can also be decomposed by light irradiation.

In the above-mentioned embodiment, each treatment fluid is sprayed from the moving nozzle. However, each treatment fluid may be sprayed from a fixed nozzle, and the position of the solid nozzle with respect to the rotary jig 5 is fixed.

The self-rotating fixture 5 is not limited to clamping fixtures, and may also be a vacuum fixture; the clamping fixture is to make a plurality of clamp pins 20 contact the peripheral end surface of the substrate W, and the vacuum fixture is to make the substrate W The lower surface is adsorbed to the upper surface of the spin base 21 to hold the substrate W horizontally.

In the above embodiment, the processing film 100 is split on the substrate W by light irradiation. However, substrate processing in which the processing film 100 is dissolved, melted, or decomposed by light irradiation may also be performed.

In this specification, when a numerical range is indicated using "to (that is, "~" or "-")", unless otherwise specified, both endpoints are included, and the unit is common.

Although the embodiments of the present invention have been described in detail, these embodiments are only specific examples for clarifying the technical content of the present invention. limited by the scope of the patent.

This application corresponds to Japanese Patent Application No. 2020-122304 filed at the Japan Patent Office on July 16, 2020, and the entire content of Japanese Patent Application No. 2020-122304 is incorporated into this application.

1, 1P, 1Q: substrate processing device 2: Processing unit 2A: Film formation processing unit 2B: Membrane removal processing unit 2D: Dry processing unit 2W: wet processing unit 3: Controller 3A: Processor 3B: memory 4, 4A, 4B, 300: chamber 4a, 4Aa, 4Ba, 300a: entrance and exit 4b, 4Ab, 4Bb, 300b: door stop unit 5, 5A, 5B: Rotation fixture 6: Opposite components 6a: opposite side 7: Handling hood 8,8P: Light irradiation unit 9: First mobile nozzle 10: Second moving nozzle 11: The third moving nozzle 12: The fourth moving nozzle 20: Fixture pin 21: Rotation base 22: Rotation axis 23: Rotation motor 24: Pin to close the unit 35: The first nozzle moving unit 36: The second nozzle moving unit 37: The third nozzle mobile unit 40: Treatment liquid piping 41: Membrane removal solution piping 42: Residue solution piping 50: Process liquid valve 51: Process membrane removal liquid valve 52: Residue solution valve 60: axis of rotation 61: Opposite component lifting unit 62: Opposite component rotation unit 71: Shield 71A: First Shield 71B: Second Shield 72: cover 72A: First cover 72B: second cover 73: Outer wall components 74: Protective cover lifting unit 80: lights 81: lamp holder 85: Lamp energization unit 86: Lamp mobile unit 87: arm 88: Arm mobile unit 89: Rotation shaft 100: processing film 100A: non-exposed part 100B: exposure part 101: liquid film 105: Remove object 110: Handling diaphragm 150: surface layer 160: Bump pattern 161: Construct 161a: surface 161b: front face 161c: side 162: concave part 162a: bottom surface 165: pattern surface 200,250: polymer 201: main chain 202: Side chain 251: Decomposition 301: substrate holding table 301a: Mesa 302: mask loading unit 303: mask 310: Light generation department 311: Light adjustment department 312: Light scanning department A1, A2: axis of rotation C: carrier CP: cut off position CR,IR: handling robot G1, G2: Gap L: light beam LP: load port R:hydrocarbyl W: Substrate

[ Fig. 1 ] is a schematic plan view showing the layout of a substrate processing apparatus according to a first embodiment of the present invention. [ Fig. 2 ] is a schematic partial cross-sectional view showing a schematic configuration of a processing unit included in the aforementioned substrate processing apparatus. [ Fig. 3 ] is a schematic diagram for explaining the properties of the first polymer contained in the treatment film. [ Fig. 4 ] is a block diagram showing the electrical configuration of the main parts of the aforementioned substrate processing apparatus. [FIG. 5] It is a flow chart for demonstrating an example of the substrate processing performed by the said substrate processing apparatus. [FIG. 6A] It is a schematic diagram for demonstrating the state of the process liquid supply process (step S1) of the said substrate process. [ Fig. 6B ] is a schematic diagram for explaining the appearance of the process film forming step (step S2 ) of the aforementioned substrate treatment. [FIG. 6C] It is a schematic diagram for demonstrating the state of the processing film formation process (step S2) of the said substrate processing. [FIG. 6D] It is a schematic diagram for demonstrating the state of the light irradiation process (step S3) of the said board|substrate processing. [FIG. 6E] It is a schematic diagram for demonstrating the state of the processing film removal process (step S4) of the said substrate processing. [FIG. 6F] is a schematic diagram for explaining the state of the processing film removal process (step S4) of the above-mentioned substrate processing. [FIG. 6G] It is a schematic diagram for demonstrating the state of the residue dissolution process (step S5) of the said substrate processing. [FIG. 7A] is a schematic diagram for explaining the state of the vicinity of the surface of the substrate during the aforementioned substrate processing. [ Fig. 7B ] is a schematic diagram for explaining the state of the vicinity of the surface of the substrate during the aforementioned substrate processing. [ FIG. 7C ] is a schematic diagram for explaining the state of the vicinity of the surface of the substrate during the aforementioned substrate processing. [FIG. 7D] is a schematic diagram for explaining the state of the vicinity of the surface of the substrate during the aforementioned substrate processing. [ Fig. 8 ] is a schematic diagram for explaining the state near the surface of the substrate during the above-mentioned substrate processing, and shows the state where the treated film is peeled off from the surface of the substrate by irradiation with light. [ Fig. 9A ] is a schematic diagram for explaining an example of the second polymer contained in the treatment film. [ FIG. 9B ] is a schematic diagram for explaining the decomposition mechanism of the aforementioned second polymer. [ Fig. 9C ] is a schematic diagram for explaining how the treatment film containing the aforementioned second polymer retains the object to be removed. [FIG. 10A] It is a schematic diagram for demonstrating the state of the processing film formation process (step S2) in the modification of the said substrate processing. [ FIG. 10B ] is a schematic view for explaining the state of the process film forming step (step S2 ) in the modification example of the above-mentioned substrate processing. [FIG. 11] It is a schematic diagram for demonstrating the 1st modification of the light irradiation unit with which the said processing unit is equipped. [ Fig. 12 ] is a schematic diagram for explaining a second modification example of the aforementioned light irradiation unit. [FIG. 13] It is a schematic diagram for demonstrating the structure of the wet processing unit with which the substrate processing apparatus of 2nd Embodiment is equipped. [FIG. 14] It is a schematic diagram for demonstrating the structure of the dry processing unit with which the substrate processing apparatus of 2nd Embodiment is equipped. [FIG. 15A] It is a schematic diagram for demonstrating the state of the vicinity of the surface of a substrate in the substrate processing by the substrate processing apparatus of 2nd Embodiment. [FIG. 15B] It is a schematic diagram for demonstrating the state of the vicinity of the surface of a substrate in the substrate processing by the substrate processing apparatus of 2nd Embodiment. [FIG. 15C] It is a schematic diagram for demonstrating the state of the vicinity of the surface of a substrate in the substrate processing by the substrate processing apparatus of 2nd Embodiment. [FIG. 15D] It is a schematic diagram for demonstrating the state of the vicinity of the surface of a substrate in the substrate processing by the substrate processing apparatus of 2nd Embodiment. [FIG. 16] It is a schematic diagram for demonstrating the state of the vicinity of the surface of a substrate in the substrate processing performed by the substrate processing apparatus of 2nd Embodiment. [FIG. 17] It is a schematic diagram for demonstrating the structure of the substrate processing apparatus of 3rd Embodiment.

8: Light irradiation unit

100: processing film

105: Remove object

110: Handling diaphragm

W: Substrate

Claims (11)

A substrate processing method comprising: a processing film forming step of supplying a processing liquid to a surface of a substrate and solidifying or hardening the processing liquid on the surface of the substrate, thereby forming a processing film on the surface of the substrate; a light irradiation step, The treatment film is irradiated with light to split the treatment film on the surface of the substrate; and the treatment film removal step is to supply a treatment film removal solution to the surface of the substrate after the light irradiation process, and by the treatment The film removing liquid removes the aforementioned treatment film that has been split from the surface of the aforementioned substrate; the aforementioned treatment film system contains a first polymer, and the aforementioned first polymer system has: a main chain in a solid state; and a side chain bonded to the aforementioned The main chain is configured to be liquefied by irradiation of light; the step of irradiating light includes the step of liquefying the side chains of the first polymer, thereby splitting the treated film. The substrate processing method as described in Claim 1, wherein the aforementioned processing film contains a second polymer that is decomposed by irradiation of light; the aforementioned step of irradiating light includes the following step: decomposing the aforementioned second polymer, thereby The previously treated membranes were disintegrated. A substrate processing method comprising: a processing film forming step of supplying a processing liquid to a surface of a substrate and solidifying or hardening the processing liquid on the surface of the substrate, thereby forming a processing film on the surface of the substrate; a light irradiation step, irradiating light to the treatment film so that the treatment film is split on the surface of the substrate; and The treatment film removal step is to supply a treatment film removal solution to the surface of the substrate after the light irradiation process, and remove the split treatment film from the surface of the substrate by the treatment film removal solution; the treatment film contains A second polymer decomposed by irradiation of light; the step of irradiating light includes a step of decomposing the second polymer, thereby splitting the treatment film. The substrate processing method as described in claim 3, wherein the second polymer has: a plurality of hydrocarbon groups; and a C-O bond, which connects the hydrocarbon groups; the light irradiation step is to cut the C-O bond by light irradiation Knots, whereby decomposition products composed of hydrocarbon compounds are formed. The substrate processing method as described in claim 3, wherein the processing solution contains: the second polymer; and a cross-linking agent, which cross-links the second polymers by irradiation of light; the processing film forming step The method includes: a light cross-linking step of irradiating light to the treatment liquid on the surface of the substrate, whereby the cross-linking agent cross-links the second polymers to harden the second polymers. The substrate processing method described in any one of Claims 1 to 5, wherein the processing film formed in the processing film forming step holds the object to be removed existing on the surface of the substrate; the light irradiation step is It includes the step of splitting the treatment film to form a treatment film piece larger than the object to be removed. The substrate processing method described in any one of Claims 1 to 5, further comprising: an irradiating peeling step, which is to irradiate the aforementioned processing film with light after the aforementioned light irradiation step and before the aforementioned processing film removal step, whereby The aforementioned treated film is peeled off from the surface of the aforementioned substrate. The substrate processing method according to any one of Claims 1 to 5, wherein the process of removing the process film includes a liquid stripping process of peeling the process film from the surface of the substrate with the process film removing liquid. The substrate processing method according to any one of Claims 1 to 5, wherein the step of irradiating light includes the step of irradiating light toward the surface of the substrate through a photomask. A substrate processing apparatus comprising: a processing liquid supply unit that supplies a processing liquid toward a surface of a substrate; a processing film forming unit that solidifies or hardens the processing liquid on the surface of the substrate, thereby forming a treatment liquid on the surface of the substrate. The treatment film; the light irradiation unit is used to irradiate light on the surface of the aforementioned substrate; the treatment film removal liquid supply unit is used to supply the treatment film removal liquid towards the surface of the aforementioned substrate, and the aforementioned treatment film removal liquid is used to remove the film formed on the aforementioned substrate. processing film; and a controller that controls the aforementioned processing liquid supply unit, the aforementioned processing film forming unit, the aforementioned light irradiation unit, and the aforementioned processing film removal liquid supply unit; the aforementioned controller is programmed to perform: the processing film forming process, from The treatment liquid supply unit supplies the treatment liquid to the surface of the substrate, and the treatment film is formed on the surface of the substrate by the treatment film forming unit; the light irradiation step is to irradiate the treatment film with light from the light irradiation unit, so that the above-mentioned the treatment film is split on the surface of the aforementioned substrate; and In the processing film removal step, after the light irradiation step, the processing film removal liquid is supplied from the processing film removal liquid supply unit to the surface of the substrate, and the processing film that has been split is removed from the surface of the substrate by the processing film removal liquid. Surface removal: the above-mentioned treatment film system contains a first polymer, and the above-mentioned first polymer system has: a main chain in a solid state; and a side chain, which is bonded to the above-mentioned main chain, and is configured to be liquefied by irradiation of light; The step of irradiating light includes a step of liquefying the side chains of the first polymer to split the treated film. A substrate processing apparatus comprising: a processing liquid supply unit for supplying a processing liquid toward a surface of a substrate; a processing film forming unit for solidifying or hardening the processing liquid on the surface of the substrate, thereby forming The processing film; the light irradiation unit is used to irradiate the surface of the aforementioned substrate with light; the processing film removal liquid supply unit is used to supply the processing film removal liquid toward the surface of the aforementioned substrate, and the aforementioned processing film removal liquid is used to remove the film formed on the aforementioned substrate. processing film; and a controller that controls the aforementioned processing liquid supply unit, the aforementioned processing film forming unit, the aforementioned light irradiation unit, and the aforementioned processing film removal liquid supply unit; the aforementioned controller is programmed to perform: the processing film forming process, from The treatment liquid supply unit supplies the treatment liquid to the surface of the substrate, and forms a treatment film on the surface of the substrate by the treatment film forming unit; the light irradiation step is to irradiate the treatment film with light from the light irradiation unit, so that the the treatment film is split on the surface of the aforementioned substrate; and In the processing film removal step, after the light irradiation step, the processing film removal liquid is supplied from the processing film removal liquid supply unit to the surface of the substrate, and the processing film that has been split is removed from the surface of the substrate by the processing film removal liquid. Surface removal: the treatment film contains a second polymer decomposed by light irradiation; the light irradiation step includes a step of decomposing the second polymer to thereby split the treatment film.

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