CN113169061A - Substrate processing method and substrate processing apparatus - Google Patents

Substrate processing method and substrate processing apparatus Download PDF

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Publication number
CN113169061A
CN113169061A CN201980076850.0A CN201980076850A CN113169061A CN 113169061 A CN113169061 A CN 113169061A CN 201980076850 A CN201980076850 A CN 201980076850A CN 113169061 A CN113169061 A CN 113169061A
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China
Prior art keywords
substrate
liquid
solid
film
solid film
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CN201980076850.0A
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Chinese (zh)
Inventor
高桥弘明
藤原直澄
尾辻正幸
吉田幸史
上田大
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Screen Holdings Co Ltd
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Screen Holdings Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting

Abstract

The substrate processing method includes: a1 st liquid film forming step of forming a1 st liquid film of a solid-forming substance on a surface of a substrate by supplying the substrate with a treatment liquid containing the treatment liquid; a1 st solid film forming step of forming a1 st solid film containing the solid substance from the 1 st liquid film; a1 st solid film peeling and removing step of peeling and removing the 1 st solid film from the surface of the substrate by supplying a peeling liquid for peeling the 1 st solid film to the surface of the substrate; a 2 nd liquid film forming step of forming a 2 nd liquid film of the treatment liquid on the surface of the substrate by supplying the treatment liquid to the surface of the substrate after removing the 1 st solid film from the surface of the substrate; a 2 nd solid film forming step of forming a 2 nd solid film containing the solid substance from the 2 nd liquid film; and a 2 nd solid film vaporization removal step of vaporizing the 2 nd solid film without passing through a liquid state, and removing the 2 nd solid film from the surface of the substrate.

Description

Substrate processing method and substrate processing apparatus
Technical Field
The present invention relates to a substrate processing method and a substrate processing apparatus for processing a substrate. Examples of the substrate to be processed include substrates such as a semiconductor wafer, a substrate for a liquid crystal Display device, a substrate for an FPD (Flat Panel Display) such as an organic EL (Electroluminescence) Display device, a substrate for an optical disk, a substrate for a magnetic disk, a substrate for an optical disk, a substrate for a photomask, a ceramic substrate, and a substrate for a solar cell.
Background
In a manufacturing process of a semiconductor device, a cleaning process is performed to remove various contaminants adhering to a substrate, residues of a processing liquid, a resist, and the like used in a previous process, various particles, and the like (hereinafter, collectively referred to as "objects to be removed"). Then, a spin drying step of rotating the substrate at a high speed is performed to dry the upper surface of the substrate.
In the cleaning step, generally, a cleaning liquid such as Deionized Water (DIW) is supplied to the substrate to remove the object to be removed by a physical action of the cleaning liquid, or a chemical liquid chemically reacting with the object to be removed is supplied to the substrate to chemically remove the object to be removed.
However, as the pattern formed on the substrate becomes finer and more complicated, it is no longer easy to remove the object to be removed by the physical action of the cleaning liquid or the chemical action of the chemical liquid.
Then, the following method is proposed: a film forming treatment liquid is supplied onto the upper surface of a substrate, and after an overcoat film (top coat film) obtained by curing or hardening the film forming treatment liquid is formed on the substrate, the overcoat film is dissolved and removed by a removal liquid (patent document 1).
Documents of the prior art
Patent document
Patent document 1: U.S. patent application publication No. 2014/041685 specification
Disclosure of Invention
However, in the method described in patent document 1, since the overcoat film is dissolved on the substrate by supplying the removing liquid to the upper surface of the substrate, the object to be removed may fall off from the dissolved overcoat film, and the fallen object to be removed may be attached to the substrate again. Therefore, the surface of the substrate may not be cleaned satisfactorily.
Furthermore, a rinse liquid for rinsing the removal liquid for removing the removal object enters the inside of the pattern. Then, a spin drying process is performed to remove the rinse liquid from the substrate. In the spin drying process, the surface tension of the liquid entering the inside of the pattern acts on the pattern. There is a fear that the pattern collapses due to the surface tension.
Specifically, as shown in fig. 18, when the surface of the substrate is dried, a liquid surface (interface between air and liquid) of the liquid entering the pattern is formed in the pattern. Therefore, the surface tension of the liquid acts on the contact position of the liquid surface and the pattern. When the surface tension is large, collapse of the pattern is likely to occur. Since the surface tension of DIW, which is a typical rinse liquid, is large, collapse of the pattern in the spin drying process cannot be ignored.
Accordingly, an object of the present invention is to provide a substrate processing method and a substrate processing apparatus capable of suppressing pattern collapse and cleaning the surface of a substrate satisfactorily.
One embodiment of the present invention provides a substrate processing method including the steps of: a1 st liquid film forming step of forming a1 st liquid film of a solid-forming substance on a surface of a substrate by supplying the substrate with a treatment liquid containing the treatment liquid; a1 st solid film forming step of forming a1 st solid film containing the solid substance from the 1 st liquid film; a1 st solid film peeling and removing step of peeling and removing the 1 st solid film from the surface of the substrate by supplying a peeling liquid for peeling the 1 st solid film to the surface of the substrate; a 2 nd liquid film forming step of forming a 2 nd liquid film of the treatment liquid on the surface of the substrate by supplying the treatment liquid to the surface of the substrate after removing the 1 st solid film from the surface of the substrate; a 2 nd solid film forming step of forming a 2 nd solid film containing the solid substance from the 2 nd liquid film; and a 2 nd solid film vaporization removal step of vaporizing the 2 nd solid film without passing through a liquid state, and removing the 2 nd solid film from the surface of the substrate.
According to this method, a1 st solid film is formed on the surface of the substrate from a1 st liquid film of the treatment liquid. Then, the 1 st solid film is peeled and removed from the surface of the substrate by the action of the peeling liquid supplied to the surface of the substrate. That is, the 1 st solid film can be removed from the surface of the substrate while maintaining a solid state. Therefore, the removal object can be inhibited or prevented from falling off from the 1 st solid film, and reattachment of the removal object to the surface of the substrate can be inhibited or prevented. Therefore, the surface of the substrate can be cleaned satisfactorily.
After the 1 st solid film is removed from the surface of the substrate, the same treatment liquid is supplied again to the surface of the substrate, thereby forming a 2 nd liquid film of the treatment liquid. Then, a 2 nd solid film is formed from the 2 nd liquid film. The 2 nd solid film is removed from the surface of the substrate without being vaporized in a liquid state. Therefore, the surface tension acting on the surface of the substrate from the processing liquid can be reduced. Therefore, collapse of the pattern formed on the surface of the substrate can be suppressed or prevented.
As a result, the surface of the substrate can be cleaned satisfactorily and dried satisfactorily.
In addition, according to the substrate processing, the 1 st solid film peeled and removed and the 2 nd solid film evaporated and removed are formed of the same kind of processing liquid. Therefore, compared with the substrate processing in which the 1 st solid film and the 2 nd solid film are formed of different types of processing liquids, the apparatus used for the substrate processing can be simplified. This can suppress the device cost and the occupied area (installation area) of the device.
The "same type of treatment liquid" means that the chemical formulas of the solid-forming substances in the treatment liquids are the same, and the "different types of treatment liquids" means that the chemical formulas of the solid-forming substances in the treatment liquids are different. Therefore, even if the concentration of the solid-forming substance and/or the temperature of the treatment liquid are different between the treatment liquid for forming the 1 st solid film and the treatment liquid for forming the 2 nd solid film, the treatment liquids are the same as each other as long as the chemical formulas of the solid-forming substance in the treatment liquids are the same.
In one embodiment of the present invention, the 1 st solid film forming step includes a step of forming the 1 st solid film for holding an object to be removed existing on the surface of the substrate. The 1 st solid film peeling step includes a step of peeling the 1 st solid film from the surface of the substrate while holding the object to be removed.
According to this method, the removal target present on the surface of the substrate is held by the 1 st solid film when the 1 st solid film is formed, and is separated from the surface of the substrate when the 1 st solid film is peeled from the surface of the substrate. Thereafter, the 1 st solid film with the removal object held thereon is removed from the surface of the substrate by the stripping liquid. Therefore, the removal object separated from the surface of the substrate can be prevented or inhibited from adhering to the surface of the substrate again.
In one embodiment of the present invention, the treatment liquid is a melt of the solid-forming substance. The substrate processing method further includes: a1 st cooling step of cooling the 1 st liquid film in the 1 st solid film forming step to solidify the 1 st liquid film; and a 2 nd cooling step of cooling the 2 nd liquid film in the 2 nd solid film forming step to solidify the 2 nd liquid film.
According to this method, a1 st solid film is formed by cooling a1 st liquid film so that the 1 st liquid film is solidified, and a 2 nd solid film is formed by cooling a 2 nd liquid film so that the 2 nd liquid film is solidified. That is, the 1 st solid film and the 2 nd solid film can be formed by a common method of cooling the melt.
Here, in the case where the 1 st solid film and the 2 nd solid film are formed by different methods, it is necessary to provide units necessary for the respective methods in an apparatus used for substrate processing. For example, when one of the 1 st solid film and the 2 nd solid film is formed by heating the processing liquid and the other is formed by cooling the processing liquid, both a means for heating the processing liquid on the substrate and a means for cooling the processing liquid on the substrate are necessary.
In this case, if the 1 st solid film and the 2 nd solid film can be formed by the common method of cooling the melt, only the means for cooling the processing liquid on the substrate may be provided. Therefore, as compared with the case where the 1 st solid film and the 2 nd solid film are formed by different methods, the apparatus used for substrate processing can be simplified.
In one embodiment of the present invention, the 1 st cooling step is also continued in the 1 st solid film peeling and removing step. Thus, even during the 1 st solid film peeling and removing step, the solid-forming substance on the substrate can be maintained in a solid state without melting. Therefore, the 1 st solid film can be reliably removed from the surface of the substrate while maintaining the solid state. Therefore, the removal target can be further suppressed or prevented from falling off from the 1 st solid film, and reattachment of the removal target to the substrate surface can be further suppressed or prevented.
In one embodiment of the present invention, the 2 nd cooling step is also continued in the 2 nd solid film vaporization and removal step. Thus, even during the 2 nd solid film vaporization removal step, the solid forming substance on the substrate can be maintained in a solid state without melting. Therefore, the 2 nd solid film can be vaporized while the change of the 2 nd solid film into a liquid is suppressed or prevented. Therefore, the surface tension of the processing liquid acting on the surface of the substrate can be further reduced.
In one embodiment of the present invention, the treatment liquid includes the solid substance as a solute and a solvent for dissolving the solid substance. The substrate processing method further includes: a1 st deposition step of evaporating the solvent from the 1 st liquid film in the 1 st solid film formation step to deposit the solid-forming substance; and a 2 nd deposition step of evaporating the solvent from the 2 nd liquid film in the 2 nd solid film formation step to deposit the solid-forming substance.
According to this method, in the 1 st solid film forming step and the 2 nd solid film forming step, the solvent in the treatment liquid is evaporated to precipitate a solid-forming substance, thereby forming the 1 st solid film and the 2 nd solid film, respectively. That is, the 1 st solid film and the 2 nd solid film can be formed by a common method of evaporation of a solvent. Therefore, as compared with the case where the 1 st solid film and the 2 nd solid film are formed by different methods, the apparatus used for substrate processing can be simplified.
In one embodiment of the present invention, the solid substance is a sublimable substance which is sublimated from a solid to a gas. The substrate processing method may further include a substrate heating step of heating the substrate in the 2 nd deposition step to promote evaporation of the solvent from the 2 nd liquid film. The substrate heating step is also continued in the 2 nd solid film vaporization and removal step.
According to this method, the heating of the substrate in the 2 nd deposition step is continued also in the 2 nd solid film vaporization removal step. Therefore, the heat stored in the substrate to heat the substrate for evaporating the solvent can be used for heating the 2 nd solid film. Therefore, in the 2 nd solid film vaporization removal step, the solid substance in the 2 nd solid film can be rapidly sublimated.
In one embodiment of the present invention, in the 1 st liquid film forming step and the 2 nd liquid film forming step, the processing liquid is supplied from a common processing liquid tank to a discharge nozzle, and the processing liquid is discharged from the discharge nozzle toward the surface of the substrate.
According to this method, in both the 1 st liquid film forming step and the 2 nd liquid film forming step, the processing liquid supplied from the common processing liquid tank to the discharge nozzle is discharged toward the surface of the substrate. Therefore, the number of processing liquid tanks can be reduced compared to a method in which the processing liquid discharged from the discharge nozzle toward the surface of the substrate in the 1 st liquid film forming step and the processing liquid discharged from the discharge nozzle toward the surface of the substrate in the 2 nd liquid film forming step are supplied from different processing liquid tanks to the discharge nozzle. Therefore, the apparatus used for substrate processing can be simplified.
In one embodiment of the present invention, the substrate processing method further includes: a chemical liquid supplying step of supplying a chemical liquid to the surface of the substrate before the first liquid film forming step 1; a rinse liquid supply step of supplying a rinse liquid for rinsing the chemical liquid adhering to the surface of the substrate after the chemical liquid supply step is completed and before the 1 st liquid film forming step is started; and a1 st compatible liquid supply step of supplying a1 st compatible liquid having compatibility with both the rinse liquid and the treatment liquid to the surface of the substrate after the rinse liquid supply step is completed and before the 1 st liquid film forming step is started.
According to this method, the 1 st compatible liquid has compatibility with both the rinse liquid and the treatment liquid. Therefore, even when the rinse liquid and the treatment liquid are difficult to mix, the rinse liquid on the substrate can be replaced with the treatment liquid by replacing the rinse liquid on the substrate with the 1 st compatible liquid and then replacing the 1 st compatible liquid on the substrate with the treatment liquid. Therefore, the rinse liquid and the treatment liquid can be selected regardless of whether or not they are mixed. Therefore, when the surface of the substrate is treated with the chemical solution before the treatment liquid is supplied to the surface of the substrate, the degree of freedom in selecting the rinse liquid and the treatment liquid is improved.
In one embodiment of the present invention, the substrate processing method further includes a 2 nd compatible liquid supply step of supplying a 2 nd compatible liquid compatible with both the stripping liquid and the processing liquid to the surface of the substrate after the 1 st solid film stripping and removing step is completed and before the 2 nd liquid film forming step is started.
According to this method, the 2 nd compatible liquid has compatibility with both the stripping liquid and the treatment liquid. Therefore, even when the stripping liquid and the treatment liquid are difficult to mix, the stripping liquid on the substrate can be replaced with the treatment liquid by replacing the stripping liquid on the substrate with the 2 nd compatible liquid and then replacing the 2 nd compatible liquid on the substrate with the treatment liquid. Therefore, the stripping liquid and the treatment liquid can be selected regardless of whether or not they are mixed. Therefore, the degree of freedom in selecting the stripping liquid and the treatment liquid is improved.
In one embodiment of the present invention, the substrate processing method further includes: a1 st substrate holding step of holding the substrate in a1 st chamber during a period from a start of the 1 st liquid film forming step to an end of the 2 nd solid film forming step; a transfer step of transferring the substrate in a state where the 2 nd solid film is formed from the 1 st chamber to a 2 nd chamber; and a 2 nd substrate holding step of holding the substrate in the 2 nd chamber while the 2 nd solid film vaporization and removal step is being performed.
According to this method, the substrate is held in the 1 st chamber during a period from the 1 st liquid film forming step to the end of the 2 nd solid film forming step, and is held in the 2 nd chamber during a period when the 2 nd solid film vaporization removing step is performed. Therefore, the 2 nd chamber can be configured to be exclusively used for the vaporization of the 2 nd solid film. Therefore, the 2 nd solid film can be vaporized in the 2 nd chamber to dry the surface of the substrate satisfactorily.
One embodiment of the present invention provides a substrate processing apparatus including: a treatment liquid supply unit that supplies a treatment liquid containing a solid-forming substance to a surface of a substrate; a solid forming unit that forms the solid forming substance in a solid state from the processing liquid on the surface of the substrate; a stripping liquid supply unit configured to supply a stripping liquid for stripping the solid substance from the surface of the substrate to the surface of the substrate; a vaporizing unit that vaporizes the solid substance in a solid state on the surface of the substrate without passing through a liquid state; and a controller that controls the treatment liquid supply unit, the solid forming unit, the stripping liquid supply unit, and the vaporizing unit.
The controller executes the following steps: a1 st liquid film forming step of supplying the treatment liquid from the treatment liquid supply unit to the surface of the substrate to form a1 st liquid film of the treatment liquid on the surface of the substrate; a1 st solid film forming step of forming a1 st solid film containing the solid substance in a solid state from the 1 st liquid film by the solid forming means; a1 st solid film peeling and removing step of peeling and removing the 1 st solid film from the surface of the substrate by supplying the peeling liquid from the peeling liquid supply unit to the upper surface of the substrate; a 2 nd liquid film forming step of forming a 2 nd liquid film of the treatment liquid on the surface of the substrate by supplying the treatment liquid from the treatment liquid supply unit to the surface of the substrate after removing the 1 st solid film from the surface of the substrate; a 2 nd solid film forming step of forming a 2 nd solid film containing the solid substance from the 2 nd liquid film by the solid forming means; and a 2 nd solid film vaporization removal step of vaporizing the 2 nd solid film by the vaporization unit to remove the 2 nd solid film from the surface of the substrate.
According to this configuration, the 1 st solid film is formed from the 1 st liquid film of the treatment liquid on the surface of the substrate. Then, the 1 st solid film is peeled and removed from the surface of the substrate by the action of the peeling liquid supplied to the surface of the substrate. That is, the 1 st solid film can be removed from the surface of the substrate while maintaining a solid state. Therefore, the removal target can be prevented or inhibited from falling off from the 1 st solid film, and reattachment of the removal target to the substrate surface can be prevented or inhibited. Therefore, the surface of the substrate can be cleaned satisfactorily.
After the 1 st solid film is removed from the surface of the substrate, the same treatment liquid is supplied again to the surface of the substrate to form a 2 nd liquid film of the treatment liquid. Then, a 2 nd solid film is formed from the 2 nd liquid film. The 2 nd solid film is removed from the surface of the substrate without being vaporized in a liquid state. Therefore, the surface tension of the processing liquid acting on the surface of the substrate can be reduced. Therefore, the surface of the substrate can be dried while suppressing or preventing collapse of the pattern formed on the surface of the substrate.
As a result, the surface of the substrate can be cleaned satisfactorily and dried satisfactorily.
Further, according to this structure, the first solid film removed by peeling and the second solid film removed by vaporization are formed from the same treatment liquid. Therefore, compared to substrate processing in which the 1 st solid film and the 2 nd solid film are formed of different processing liquids, an apparatus used in substrate processing can be simplified. This can suppress the cost and the occupied area of the substrate processing apparatus.
In one embodiment of the present invention, the substrate processing apparatus further includes a processing liquid tank storing the processing liquid. The processing liquid supply unit includes a discharge nozzle that discharges the processing liquid onto the surface of the substrate. The controller causes the treatment liquid supplied from the treatment liquid tank to the discharge nozzle to be discharged from the discharge nozzle toward the surface of the substrate in the 1 st liquid film forming step and the 2 nd liquid film forming step.
According to this configuration, in both the 1 st liquid film forming step and the 2 nd liquid film forming step, the processing liquid supplied from the common processing liquid tank to the discharge nozzle is discharged toward the surface of the substrate. Therefore, the number of the treatment liquid tanks can be reduced as compared with a configuration in which the treatment liquid discharged from the discharge nozzle toward the surface of the substrate in the 1 st liquid film forming step and the treatment liquid discharged from the discharge nozzle toward the surface of the substrate in the 2 nd liquid film forming step are supplied from different treatment liquid tanks to the discharge nozzle. Therefore, the substrate processing apparatus can be simplified.
In one embodiment of the present invention, the substrate processing apparatus further includes: a1 st chamber for accommodating the processing liquid supply unit, the solid forming unit, and the peeling liquid supply unit; a 2 nd chamber for accommodating the vaporizing unit; and a transfer unit for transferring the substrate from the 1 st chamber to the 2 nd chamber.
The controller executes the following steps: a1 st substrate holding step of holding the substrate in the 1 st chamber during a period from a start of the 1 st liquid film forming step to an end of the 2 nd solid film forming step; a conveying step of conveying the substrate in a state where the 2 nd solid film is formed from the 1 st chamber to a 2 nd chamber by the conveying unit; and a 2 nd substrate holding step of holding the substrate in the 2 nd chamber while the 2 nd solid film vaporization and removal step is being performed.
According to this configuration, the substrate is held in the 1 st chamber during a period from the 1 st liquid film forming step to the end of the 2 nd solid film forming step, and is held in the 2 nd chamber during a period from the execution of the 2 nd solid film vaporization removal step. Therefore, the 2 nd chamber can be configured to be exclusively used for the vaporization of the 2 nd solid film. Therefore, the 2 nd solid film can be vaporized in the 2 nd chamber to dry the surface of the substrate satisfactorily.
The above and still other objects, features and effects of the present invention will be apparent from the following description of the embodiments with reference to the accompanying drawings.
Drawings
Fig. 1 is a schematic plan view showing an internal layout of a substrate processing apparatus according to embodiment 1 of the present invention.
Fig. 2 is a schematic view showing a processing unit provided in the substrate processing apparatus.
Fig. 3 is a schematic diagram showing a configuration for supplying the processing liquid to the central nozzle of the processing unit.
Fig. 4 is a block diagram showing an electrical configuration of a main part of the substrate processing apparatus.
Fig. 5 is a schematic cross-sectional view for explaining an example of a structure of a pattern surface of a substrate processed by the substrate processing apparatus.
Fig. 6 is a flowchart for explaining an example of substrate processing performed by the substrate processing apparatus.
Fig. 7A is a schematic cross-sectional view showing the above-described substrate processing.
Fig. 7B is a schematic cross-sectional view showing the above-described substrate processing.
Fig. 7C is a schematic cross-sectional view showing the above-described substrate processing.
Fig. 7D is a schematic cross-sectional view showing the above-described substrate processing.
Fig. 7E is a schematic cross-sectional view showing the above-described substrate processing.
Fig. 7F is a schematic cross-sectional view showing the above-described substrate processing.
Fig. 7G is a schematic cross-sectional view showing the above-described substrate processing.
Fig. 7H is a schematic cross-sectional view showing the above-described substrate processing.
Fig. 7I is a schematic cross-sectional view showing the above-described substrate processing.
Fig. 7J is a schematic cross-sectional view showing the above-described substrate processing.
Fig. 7K is a schematic cross-sectional view showing the above-described substrate processing.
Fig. 7L is a schematic cross-sectional view showing the above-described substrate processing.
Fig. 8A is a schematic cross-sectional view showing a peeling state of the 1 st solid film in the above-described substrate treatment.
Fig. 8B is a schematic cross-sectional view showing the peeling condition of the 1 st solid film in the above-described substrate treatment.
FIG. 9A is a schematic cross-sectional view showing a state of vaporization of the 2 nd solid film in the above-described substrate treatment.
FIG. 9B is a schematic cross-sectional view showing the state of vaporization of the 2 nd solid film in the above-described substrate treatment.
Fig. 10 is a schematic diagram showing a modification of the solid forming unit provided in the treatment unit of embodiment 1.
Fig. 11 is a schematic view of a processing unit provided in the substrate processing apparatus according to embodiment 2 of the present invention.
Fig. 12A is a schematic cross-sectional view showing substrate processing performed by the substrate processing apparatus of embodiment 2.
Fig. 12B is a schematic cross-sectional view showing substrate processing performed by the substrate processing apparatus of embodiment 2.
Fig. 12C is a schematic cross-sectional view showing substrate processing performed by the substrate processing apparatus of embodiment 2.
Fig. 12D is a schematic cross-sectional view showing substrate processing performed by the substrate processing apparatus of embodiment 2.
Fig. 12E is a schematic cross-sectional view showing substrate processing performed by the substrate processing apparatus of embodiment 2.
Fig. 12F is a schematic cross-sectional view showing substrate processing performed by the substrate processing apparatus of embodiment 2.
Fig. 12G is a schematic cross-sectional view showing substrate processing performed by the substrate processing apparatus of embodiment 2.
Fig. 12H is a schematic cross-sectional view showing substrate processing performed by the substrate processing apparatus of embodiment 2.
Fig. 12I is a schematic cross-sectional view showing substrate processing by the substrate processing apparatus of embodiment 2.
Fig. 13 is a schematic diagram showing a modification of the solid forming unit provided in the treatment unit of embodiment 2.
Fig. 14 is a schematic diagram showing another modification of the solid forming unit provided in the treatment unit of embodiment 2.
Fig. 15 is a schematic view showing a substrate processing apparatus according to embodiment 3 of the present invention.
Fig. 16 is a schematic view showing a modification of the substrate processing apparatus according to embodiment 3.
Fig. 17 is a schematic view showing another modification of the substrate processing apparatus according to embodiment 3.
Fig. 18 is a schematic cross-sectional view for explaining the principle of pattern collapse caused by surface tension.
Detailed Description
< embodiment 1 >
Fig. 1 is a schematic plan view showing an internal layout of a substrate processing apparatus 1 according to embodiment 1 of the present invention. The substrate processing apparatus 1 is a single-wafer type apparatus for processing substrates W such as silicon wafers one by one. The substrate processing apparatus 1 is disposed in a clean room maintained at a normal temperature (23 ℃ C. or a value near thereto). Referring to fig. 1, a substrate processing apparatus 1 includes a plurality of processing units 2 for processing substrates W with a processing fluid, a load port LP for placing carriers C for accommodating a plurality of substrates W processed by the processing units 2, transfer robots IR and CR for transferring the substrates W between the load port LP and the processing units 2, and a controller 3 for controlling the substrate processing apparatus 1.
The transfer robot IR transfers the substrate W between the carrier C and the transfer robot CR. The transfer robot CR transfers the substrate W between the transfer robot IR and the processing unit 2. The plurality of processing units 2 have, for example, the same configuration. The treatment fluid contains a liquid such as a molten treatment liquid, a mixed treatment liquid, a rinse liquid, a stripping liquid, a compatible liquid, a heating medium, and a refrigerant, which will be described later, and a gas such as an inert gas.
Fig. 2 is a schematic diagram for explaining a configuration example of the processing unit 2. The processing unit 2 includes: a chamber 4 having an internal space, a spin chuck (spin chuck)5 for horizontally holding the substrate W in the chamber 4 and rotating the substrate W about a vertical rotation axis a1 passing through a central portion of the substrate W; a counter member 6 opposed to the upper surface of the substrate W held by the spin chuck 5; a cylindrical processing cup 7 for receiving the liquid scattered outward from the substrate W; and an exhaust unit 8 for exhausting the ambient gas in the chamber 4.
The chamber 4 comprises: a box-shaped partition wall 24 having a loading/unloading port 24a through which the substrate W passes; a shutter 25 for opening and closing the carrying-in and carrying-out port 24 a; and a Fan Filter Unit (FFU) 29 as an air blowing Unit for blowing clean air from the upper part of the partition wall 24 into the partition wall 24 (corresponding to the chamber 4). The air filtered by the FFU29, i.e., clean air, is supplied into the chamber 4 from the upper portion of the partition wall 24.
The spin chuck 5 is an example of a substrate holding unit that horizontally holds the substrate W. The substrate holding unit is also referred to as a substrate holder. The spin chuck 5 includes a plurality of chuck pins 20, a spin base 21, a spin shaft 22, and a spin motor 23.
The rotation shaft 22 extends in the vertical direction along the rotation axis a 1. The upper end of the rotary shaft 22 is coupled to the center of the lower surface of the rotary base 21. A through hole 21a is formed in a central region of the rotary base 21 in a plan view to vertically penetrate the rotary base 21. The through hole 21a communicates with an internal space 22a of the rotary shaft 22.
The rotation motor 23 imparts a rotational force to the rotation shaft 22. The rotating base 21 is rotated by rotating the rotating shaft 22 by the rotating motor 23. Thereby, the substrate W rotates about the rotation axis a 1. The rotation motor 23 is included in a substrate rotation unit that rotates the substrate W about the rotation axis a 1.
The processing bowl 7 includes a plurality of shields 71 for receiving liquid scattered outward from the substrate W held by the spin chuck 5, a plurality of bowls 72 for receiving liquid guided downward by the plurality of shields 71, and a cylindrical outer wall member 73 surrounding the plurality of shields 71 and the plurality of bowls 72. In this embodiment, an example is shown in which two shrouds 71 (the 1 st shroud 71A and the 2 nd shroud 71B) and two cups 72 (the 1 st cup 72A and the 2 nd cup 72B) are provided.
The 1 st cup 72A and the 2 nd cup 72B have a groove shape opened upward. The 1 st shield 71A surrounds the rotating base 21. The 2 nd shroud 71B surrounds the rotating base 21 radially outward of the 1 st shroud 71A. The 1 st cup 72A catches the liquid guided downward by the 1 st shield 71A. The 2 nd cup 72B is formed integrally with the 1 st shield 71A, and receives the liquid guided downward by the 2 nd shield 71B.
The processing unit 2 includes a shield lifting unit 74 for independently lifting and lowering the 1 st shield 71A and the 2 nd shield 71B, respectively. The 1 st shield 71A is lifted and lowered between the lower position and the upper position. The 2 nd shield 71B is lifted and lowered between the lower position and the upper position.
The guard lifting and lowering unit 74 includes, for example, a1 st ball screw mechanism (not shown) attached to the 1 st guard 71A, a1 st motor (not shown) that applies a driving force to the 1 st ball screw, a 2 nd ball screw mechanism (not shown) attached to the 2 nd guard 71B, and a 2 nd motor (not shown) that applies a driving force to the 2 nd ball screw mechanism. The shield elevating unit 74 is also referred to as a shield elevator.
The exhaust unit 8 includes an exhaust pipe 26 connected to the bottom of the outer wall member 73 of the processing bowl 7, and an exhaust valve 27 for opening and closing the exhaust pipe 26. The exhaust duct 26 is connected to an exhaust device 28 for sucking the inside of the chamber 4, for example. The exhaust unit 28 may be a part of the substrate processing apparatus 1, or may be provided separately from the substrate processing apparatus 1. When the exhaust device 28 is a part of the substrate processing apparatus 1, the exhaust device 28 is, for example, a vacuum pump or the like.
The gas in the chamber 4 is exhausted from the chamber 4 through an exhaust duct 26. Thereby, a down flow of clean air is always formed in the chamber 4. By adjusting the opening degree of the exhaust valve 27, the flow rate of the gas flowing through the exhaust duct 26 (exhaust flow rate) can be adjusted.
The pressure inside the chamber 4 is changed by adjusting the exhaust valve 27 to adjust the exhaust flow rate. That is, the pressure inside the chamber 4 is changed by the controller 3. For example, the pressure in the chamber 4 can be reduced by adjusting the exhaust valve 27 to increase the exhaust flow rate.
The opposing member 6 faces the substrate W held by the spin chuck 5 from above. The opposing member 6 is formed in a disc shape having a diameter substantially equal to or larger than the diameter of the substrate W, and is disposed substantially horizontally above the spin chuck 5. The opposing member 6 has an opposing surface 6a opposing the upper surface (upper surface) of the substrate W.
A hollow shaft 60 is fixed to the opposite member 6 on the opposite side to the opposite surface 6 a. A communication hole that vertically penetrates the counter member 6 and communicates with the internal space of the hollow shaft 60 is formed in a portion of the counter member 6 including a position overlapping the rotation axis a1 in a plan view.
The opposing member 6 blocks the ambient gas in the space S between the opposing surface 6a of the opposing member 6 and the upper surface of the substrate W from the ambient gas outside the space. The counter part 6 is therefore also referred to as a blocking plate.
The process unit 2 further includes a counter member elevating unit 61 that drives the elevation of the counter member 6. The opposing member elevating unit 61 can position the opposing member 6 at an arbitrary position (height) from the lower position to the upper position. The lower position is a position closest to the substrate W on the opposing surface 6a of the opposing member 6 within the movable range of the opposing member 6. The upper position is a position farthest from the substrate W with respect to the opposing surface 6a of the opposing member 6 within the movable range of the opposing member 6.
The opposing member elevating unit 61 includes, for example, a ball screw mechanism (not shown) attached to a support member (not shown) that supports the hollow shaft 60, and an electric motor (not shown) that applies a driving force to the ball screw mechanism. The opposite member elevating unit 61 is also referred to as an opposite member elevator (shutter elevator).
The processing unit 2 includes a1 st moving nozzle 10 movable at least in the horizontal direction, a 2 nd moving nozzle 11 movable at least in the horizontal direction, a center nozzle 12 facing a center region of the upper surface of the substrate W, and a lower surface nozzle 13 facing a center region of the lower surface (lower surface) of the substrate W. The central region of the upper surface of the substrate W is a region including the rotation center of the substrate W on the upper surface of the substrate W. The rotation center of the upper surface of the substrate W refers to the intersection position of the upper surface of the substrate W and the rotation axis a 1. The central region of the lower surface of the substrate W is a region including the rotation center of the substrate W in the lower surface of the substrate W. The rotation center of the lower surface of the substrate W is the intersection position of the lower surface of the substrate W and the rotation axis a 1.
The 1 st moving nozzle 10 is an example of a chemical liquid supply unit that supplies (discharges) a chemical liquid toward the upper surface of the substrate W.
The 1 st moving nozzle 10 is moved in the horizontal direction and the vertical direction by the 1 st nozzle moving unit 36. The 1 st moving nozzle 10 is movable between a center position and a home position (retracted position). The 1 st moving nozzle 10 is opposed to the rotation center of the upper surface of the substrate W when located at the center position.
The 1 st moving nozzle 10 is not opposed to the upper surface of the substrate W when it is located at the home position, and is located outside the processing cup 7 in plan view. The 1 st moving nozzle 10 can approach the upper surface of the substrate W or retreat upward from the upper surface of the substrate W by moving in the vertical direction.
The 1 st nozzle moving unit 36 includes, for example, a pivot shaft (not shown) extending in the vertical direction, an arm (not shown) coupled to the pivot shaft and extending horizontally, and a pivot shaft driving unit (not shown) for moving up and down or pivoting the pivot shaft.
The pivot shaft driving unit pivots the arm by rotating the pivot shaft about a vertical pivot axis. The pivot shaft driving unit moves the arm up and down by vertically moving the pivot shaft up and down. The 1 st moving nozzle 10 is fixed to the arm. The 1 st moving nozzle 10 moves in the horizontal direction and the vertical direction in accordance with the swinging and lifting of the arm.
The 1 st moving nozzle 10 is connected to a chemical solution pipe 40 for introducing a chemical solution. When the chemical liquid valve 50 interposed in the chemical liquid pipe 40 is opened, the chemical liquid is continuously discharged downward from the 1 st moving nozzle 10.
The chemical liquid discharged from the first moving nozzle 10 is, for example, a liquid containing at least one of sulfuric acid, acetic acid, nitric acid, hydrochloric acid, hydrofluoric acid, ammonia water, hydrogen peroxide, an organic acid (e.g., citric acid, oxalic acid, etc.), an organic base (e.g., TMAH: tetramethylammonium hydroxide, etc.), a surfactant, and an anticorrosive agent. Examples of the chemical solutions obtained by mixing these liquids include SPM (sulfuric acid/hydrogen peroxide mixture) solution, SC1 (ammonia-hydrogen peroxide mixture) solution, and the like.
The center nozzle 12 is accommodated in the internal space 60a of the hollow shaft 60 of the counter member 6. The discharge port 12a provided at the tip of the center nozzle 12 faces the central region of the upper surface of the substrate W from above.
The center nozzle 12 includes a plurality of tubes (1 st tube 31, 2 nd tube 32, 3 rd tube 33, and 4 th tube 34) that discharge the processing fluid downward, and a cylindrical casing 30 that surrounds the plurality of tubes. The plurality of tubes and the housing 30 extend in the vertical direction along the rotation axis a 1. The discharge port 12a of the center nozzle 12 is also a discharge port of a plurality of pipe bodies.
The 1 st pipe 31 is an example of a rinse liquid supply unit that supplies a rinse liquid such as DIW to the upper surface of the substrate W. The 2 nd pipe 32 is an example of a processing liquid supply unit that supplies a processing liquid to the upper surface of the substrate W. In this embodiment, the treatment liquid is a molten treatment liquid that is a melt of the solid-forming substance. Therefore, the 2 nd pipe 32 is also a molten processing liquid supply unit.
The 3 rd pipe 33 is an example of a compatible liquid supply means for supplying a soluble liquid such as IPA, which is compatible with both the rinse liquid and the molten processing liquid, to the upper surface of the substrate W. The 4 th pipe 34 is an example of a gas supply means, and supplies a gas to the space S between the upper surface of the substrate W and the opposing surface 6a of the opposing member 6.
The 1 st pipe 31 is connected to a rinse liquid pipe 44 for guiding the rinse liquid to the 1 st pipe 31. When the rinse liquid valve 54 interposed in the rinse liquid pipe 44 is opened, the rinse liquid is continuously discharged from the 1 st pipe 31 (center nozzle 12) toward the center area of the upper surface of the substrate W.
The rinse liquid discharged from the 1 st pipe 31 is not limited to DIW. Examples of the rinse liquid discharged from the 1 st pipe 31 include, in addition to DIW, carbonated water, electrolytic ionized water, hydrochloric acid water having a diluted concentration (for example, about 1ppm to 100 ppm), ammonia water having a diluted concentration (for example, about 1ppm to 100 ppm), and reduced water (hydrogen-rich water).
The 2 nd pipe 32 is connected to one end of a treatment liquid pipe 45 for guiding the molten treatment liquid to the 2 nd pipe 32. As shown in fig. 3, the other end of the treatment liquid pipe 45 is connected to a treatment liquid tank 90 for storing a molten treatment liquid. The processing liquid tank 90 is disposed in a fluid tank 9 (see fig. 1) disposed adjacent to the chamber 4. A fresh liquid pipe 91 through which a fresh liquid valve 92 is interposed is connected to the treatment liquid tank 90. By opening the fresh liquid valve 92, fresh molten processing liquid is supplied from the processing liquid supply source 93 to the processing liquid tank 90 through the fresh liquid pipe 91.
The treatment liquid pipe 45 is provided with a pump 94, a filter 95, and a treatment liquid valve 55. When the treatment liquid valve 55 is opened, the molten treatment liquid in the treatment liquid tank 90 is sent to the treatment liquid pipe 45 by the pump 94. The molten processing liquid fed to the processing liquid pipe 45 passes through the filter 95 and is then supplied to the 2 nd pipe body 32 (the center nozzle 12). The molten processing liquid supplied to the 2 nd pipe 32 is continuously discharged from the center nozzle 12 toward the center area of the upper surface of the substrate W.
As described above, the clean room in which the substrate processing apparatus 1 is disposed is maintained at room temperature. Therefore, if the solidification point of the solid substance is lower than the normal temperature, the solid substance is maintained as a liquid (melt) even without heating. Thus, in this embodiment, the solid forming substance preferably has a freezing point below ambient temperature. If the solid substance is a sublimable substance that can be sublimated, the solid substance in a solid state can be easily sublimated by blowing an inert gas, or by reducing the pressure and heating of the ambient gas. Therefore, the solid substance is preferably a sublimable substance. Here, "sublimation" means a mode in which a solid is changed into a gas without passing through a liquid state and is gasified.
Examples of the sublimable substance which is a melt at normal temperature include 1, 1,2, 2, 3, 3, 4-heptafluorocyclopentane, 1, 4-dioxane, cyclohexane, acetic acid, and dimethyl carbonate. 1, 1,2, 2, 3, 3, 4-heptafluorocyclopentane has a vapor pressure of about 8266Pa at 20 ℃, a melting point ((freezing point) freezing point under 1 atm. the same applies hereinafter) of 20.5 ℃ and a boiling point of 82.5 ℃. Thus, 1, 1,2, 2, 3, 3, 4-heptafluorocyclopentane changes state to a solid state, for example, by cooling to 20.5 ℃ or lower.
The 3 rd pipe 33 is connected to a compatible liquid pipe 46 for introducing a soluble liquid such as IPA to the 3 rd pipe 33. When the compatible liquid valve 56 interposed in the compatible liquid pipe 46 is opened, the compatible liquid is continuously discharged from the 3 rd pipe 33 (center nozzle 12) toward the center region of the upper surface of the substrate W. The compatible liquid is compatible not only with the rinse liquid and the molten processing liquid but also with the stripping liquid described later.
The compatible liquid discharged from the 3 rd pipe 33 is not limited to IPA. Examples of the compatible liquid discharged from the 3 rd tube 33 include liquids containing at least one of IPA, HFE (hydrofluoroether), methanol, ethanol, acetone, and trans-1, 2-dichloroethylene.
The 4 th pipe 34 is connected to a1 st gas pipe 47 for guiding the gas to the 4 th pipe 34. When the 1 st gas valve 57 interposed in the 1 st gas pipe 47 is opened, the gas is continuously discharged downward from the 4 th pipe body 34 (the center nozzle 12).
The gas discharged from the 4 th pipe 34 is, for example, nitrogen (N)2) And the like. The gas ejected from the 4 th tube 34 may be air. The inert gas is not limited to nitrogen gas, and refers to a gas that is inert with respect to the upper surface of the substrate W and the pattern formed on the upper surface of the substrate W. Examples of the inert gas include a rare gas such as argon gas in addition to nitrogen gas.
The 5 th pipe 35 is disposed between the outer peripheral surface of the housing 30 of the center nozzle 12 and the inner peripheral surface of the hollow shaft 60. The 5 th pipe 35 is an example of a gas supply means, and supplies a gas to the space S between the upper surface of the substrate W and the opposing surface 6a of the opposing member 6. The 5 th pipe 35 is connected to a 2 nd gas pipe 48 having a 2 nd gas valve 58 interposed therebetween. When the 2 nd gas valve 58 is opened, the gas is supplied from the 2 nd gas pipe 48 to the 5 th pipe body 35, and is continuously discharged downward from the discharge port of the 5 th pipe body 35.
The gas discharged from the 5 th pipe 35 is, for example, nitrogen (N)2) And the like. The gas ejected from the 5 th tube 35 may be air.
The 2 nd moving nozzle 11 is an example of a peeling liquid supply unit that supplies (discharges) a peeling liquid toward the upper surface of the substrate W.
The 2 nd moving nozzle 11 is moved in the horizontal direction and the vertical direction by the 2 nd nozzle moving unit 37. The 2 nd moving nozzle 11 is movable between a center position and a home position (retracted position). The 2 nd moving nozzle 11 is opposed to the rotation center of the upper surface of the substrate W when located at the center position.
The 2 nd moving nozzle 11 is not opposed to the upper surface of the substrate W when it is located at the home position, and is located outside the processing cup 7 in plan view. The 2 nd moving nozzle 11 can approach the upper surface of the substrate W or retreat upward from the upper surface of the substrate W by moving in the vertical direction.
The 2 nd nozzle moving unit 37 has the same structure as the 1 st nozzle moving unit 36. That is, the 2 nd nozzle moving unit 37 includes, for example, a turning shaft (not shown) extending in the vertical direction, an arm (not shown) coupled to the turning shaft and the 2 nd moving nozzle 11 and extending horizontally, and a turning shaft driving unit (not shown) for moving up and down or turning the turning shaft.
The peeling liquid discharged from the 2 nd moving nozzle 11 is a liquid for peeling off the upper surface of the substrate W. The stripping liquid has a solubility to such an extent that the solid state of the solid-forming substance is slightly soluble. The stripping liquid has affinity for the solid substance to the extent that the stripping liquid can reach the upper surface of the substrate W through the solid substance in a solid state.
Examples of the stripping liquid discharged from the 2 nd moving nozzle 11 include a mixed liquid of IPA and DIW (hereinafter referred to as "IPA/DIW mixed liquid") and the like.
When the melt processing liquid is 1, 1,2, 2, 3, 3, 4-heptafluorocyclopentane, the stripping liquid is preferably an IPA/DIW mixture. In this embodiment, an example in which the stripping liquid is an IPA/DIW mixed liquid will be described.
The 2 nd moving nozzle 11 is connected to one end of the common pipe 41 in which the common valve 51 is interposed. An IPA pipe 42 having an IPA valve 52 interposed therebetween and a DIW pipe 43 having a DIW valve 53 interposed therebetween are connected to the other end of the common pipe 41.
When the common valve 51, the IPA valve 52, and the DIW valve 53 are opened, IPA and DIW are mixed in the common pipe 41 to prepare an IPA/DIW mixture. Then, the IPA/DIW mixture is continuously discharged downward from the discharge port of the 2 nd moving nozzle 11 as a stripping liquid. The ratio of IPA in the IPA/DIW mixture discharged from the 2 nd moving nozzle 11 is preferably about several percent.
As described above, the compatible liquid discharged from the center nozzle 12 preferably has compatibility with the molten processing liquid, the rinse liquid, and the stripping liquid. When the melting treatment liquid is 1, 1,2, 2, 3, 3, 4-heptafluorocyclopentane, the rinse liquid is DIW, and the stripping liquid is an IPA/DIW mixed liquid, IPA is preferably used as the compatible liquid.
Unlike this embodiment, the IPA/DIW mixed liquid adjusted in advance to an appropriate concentration may be supplied to the 2 nd moving nozzle 11. In this case, the 2 nd moving nozzle 11 can discharge the IPA/DIW mixture having a stable IPA concentration. The IPA and the DIW may be mixed above the substrate W after being discharged from the 2 nd moving nozzle 11 and then brought into contact with the upper surface of the substrate W, or the IPA and the DIW may be mixed on the upper surface of the substrate W after being discharged from the 2 nd moving nozzle 11. When IPA and DIW are ejected from the nozzles and then mixed, IPA and DIW may be ejected from different nozzles.
The lower surface nozzle 13 is inserted into a through hole 21a opened in the center of the upper surface of the rotating base 21. The discharge port 13a of the lower surface nozzle 13 is exposed from the upper surface of the rotating base 21. The discharge port 13a of the lower surface nozzle 13 faces a central region of the lower surface of the substrate W from below. The lower surface nozzle 13 is an example of a cooling medium supply unit that supplies a cooling medium to the substrate W.
The lower surface nozzle 13 is connected to a refrigerant pipe 49 for guiding the refrigerant to the lower surface nozzle 13. When the refrigerant valve 59 interposed in the refrigerant pipe 49 is opened, the refrigerant is continuously discharged from the lower surface nozzle 13 toward the central region of the lower surface of the substrate W. By supplying the cooling medium to the lower surface of the substrate W, the liquid or solid on the substrate W is cooled via the substrate W.
The refrigerant discharged from the lower surface nozzle 13 is, for example, DIW (low temperature DIW) having a temperature lower than the freezing point of the solid substance. Therefore, the molten processing liquid on the substrate W can be cooled by the low-temperature DIW discharged from the lower surface nozzle 13 and solidified.
When the molten processing liquid is 1, 1,2, 2, 3, 3, 4-heptafluorocyclopentane, DIW cooled to 20.5 ℃ or less is used as the low-temperature DIW. The refrigerant discharged from the lower surface nozzle 13 is not limited to low-temperature DIW, and may be a liquid other than DIW, for example, a liquid that cools one of the liquids listed as rinse liquid to a low temperature. The refrigerant discharged from the lower surface nozzle 13 may be a gas, and may be, for example, a nitrogen gas (inert gas) or the like having a temperature lower than the freezing point of the solid substance.
Fig. 4 is a block diagram for explaining an electrical configuration of a main part of the substrate processing apparatus 1. The controller 3 includes a microcomputer and controls a control object provided in the substrate processing apparatus 1 in accordance with a predetermined program. More specifically, the controller 3 includes a processor (CPU)3A and a memory 3B storing programs, and executes the programs by the processor 3A to execute various kinds of control for substrate processing.
In particular, the controller 3 controls the operations of the transfer robots IR, CR, FFU29, the rotation motor 23, the 1 st nozzle transfer unit 36, the 2 nd nozzle transfer unit 37, the counter member elevating unit 61, the shield elevating unit 74, the exhaust device 28, the pump 94, the exhaust valve 27, the chemical liquid valve 50, the common valve 51, the IPA valve 52, the DIW valve 53, the rinse liquid valve 54, the treatment liquid valve 55, the compatible liquid valve 56, the 1 st gas valve 57, the 2 nd gas valve 58, the refrigerant valve 59, and the fresh liquid valve 92. By controlling these valves, the ejection of fluid from the corresponding nozzle and tube is controlled.
As shown in fig. 5, a fine uneven pattern 160 is formed on the upper surface of a substrate W to be subjected to substrate processing. The uneven pattern 160 includes fine convex structures 161 formed on the upper surface of the substrate W, and recesses (grooves) 162 formed between adjacent structures 161.
A pattern surface 165 having irregularities is formed on the surface of the uneven pattern 160, that is, the surfaces of the structures 161 (protrusions) and the recesses 162. The surface 161a of the structure 161 is constituted by a tip surface 161b (top) and a side surface 161c, and the surface of the recess 162 is constituted by a bottom surface 162a (bottom). When the structure 161 is cylindrical, a concave portion is formed therein.
Structure 161 may include an insulator film or a conductor film. Further, the structure 161 may be a laminated film obtained by laminating a plurality of films.
The uneven pattern 160 is a fine pattern having an aspect ratio of 3 or more. The aspect ratio of the concave-convex pattern 160 is, for example, 10 to 50. The width L1 of the structures 161 may be about 5nm to 45nm, and the interval L2 between the structures 161 may be about 5nm to several μm. The height of the structure 161 (pattern height T1) may be, for example, about 50nm to 5 μm. The pattern height T1 is the distance between the distal end surface 161b of the structure 161 and the bottom surface 162a (bottom) of the recess 162.
Fig. 6 is a flowchart for explaining an example of substrate processing performed by the substrate processing apparatus 1, and mainly shows processing realized by the controller 3 executing a program. Fig. 7A to 7L are schematic sectional views for explaining substrate processing performed by the substrate processing apparatus 1. Hereinafter, the substrate processing performed by the substrate processing apparatus 1 will be described mainly with reference to fig. 2 and 6. Reference is made to fig. 7A to 7L as appropriate.
In the substrate processing performed by the substrate processing apparatus 1, for example, as shown in fig. 6, the substrate carry-in (step S1), the chemical liquid processing step (step S2), the rinsing step (step S3), the 1 st compatible liquid supply step (step S4), the 1 st liquid film forming step (step S5), the 1 st solid film forming step (step S6), the 1 st solid film peeling and removing step (step S7), the 2 nd compatible liquid supply step (step S8), the 2 nd liquid film forming step (step S9), the 2 nd solid film forming step (step S10), the 2 nd solid film vaporizing and removing step (step S11), the drying step (step S12), and the substrate carry-out (step S13) are sequentially performed.
Specifically, first, unprocessed substrates W are carried from the carrier C into the processing unit 2 by the transfer robots IR and CR (see fig. 1) and delivered to the spin chuck 5 (step S1). Thereby, the substrate W is horizontally held by the spin chuck 5 (substrate horizontal holding step). The holding of the spin chuck 5 on the substrate W is continued until the drying process (step S12) is completed. When the substrate W is carried in, the opposing member 6 is retracted to the upper position, and the plurality of shields 71 are retracted to the lower position.
After the transfer robot CR is retracted outside the processing unit 2, the chemical liquid processing step is executed (step S2). In the chemical solution treatment step, the chemical solution is supplied to the upper surface of the substrate W, whereby the upper surface of the substrate W is treated with the chemical solution.
Specifically, first, the spin base 21 is rotated by the spin motor 23. Thereby, the substrate W is rotated (substrate rotating step). In the chemical solution treatment step, the spin base 21 is rotated at a predetermined chemical solution treatment speed. The chemical processing speed is, for example, 800 rpm.
Then, the 1 st nozzle moving unit 36 moves the 1 st moving nozzle 10 to the processing position in a state where the opposing member 6 is located at the upper position. The processing position of the 1 st moving nozzle 10 is, for example, a center position. Then, in a state where at least one of the shields 71 is located at the upper position, the medical fluid valve 50 is opened. As a result, as shown in fig. 7A, the chemical solution is supplied (discharged) from the 1 st moving nozzle 10 toward the upper surface of the rotating substrate W (chemical solution supply step, chemical solution discharge step).
The chemical solution discharged from the 1 st moving nozzle 10 flows outward along the upper surface of the substrate W by centrifugal force after contacting the upper surface of the rotating substrate W. Therefore, the chemical solution is supplied to the entire upper surface of the substrate W, and a liquid film of the chemical solution is formed to cover the entire upper surface of the substrate W.
After the chemical liquid treatment process is performed for a predetermined time, a rinsing process is performed (step S3). In the rinsing step, a rinse liquid such as DIW is supplied to the upper surface of the substrate W, thereby rinsing away the chemical solution adhering to the upper surface of the substrate W with the rinse liquid.
Specifically, when a predetermined time has elapsed from the start of the discharge of the chemical solution, the chemical solution valve 50 is closed. Thereby, the supply of the chemical solution to the substrate W is stopped. Then, the 1 st nozzle moving unit 36 moves the 1 st moving nozzle 10 to the home position. In a state where the 1 st moving nozzle 10 is retracted to the home position, the opposing member elevating unit 61 moves the opposing member 6 to the processing position. The processing position of the opposing member 6 is a position between the upper position and the lower position.
In the state in which the counterpart 6 is in the treatment position, the flushing liquid valve 54 is opened. Thereby, as shown in fig. 7B, the rinse liquid is supplied (discharged) from the center nozzle 12 toward the upper surface of the rotating substrate W (rinse liquid supply step, rinse liquid discharge step). In the flushing step, the spin base 21 is rotated at a predetermined flushing speed. The flushing speed is, for example, 800 rpm.
Before the rinse liquid starts to be discharged, the shield elevating unit 74 may vertically move at least one shield 71 in order to switch the shield 71 that receives the liquid discharged from the substrate W.
The rinse liquid discharged from the center nozzle 12 contacts the upper surface of the rotating substrate W and then flows outward along the upper surface of the substrate W by the centrifugal force. Therefore, the chemical solution on the substrate W is replaced with the rinse solution, and a liquid film of the rinse solution is formed to cover the entire upper surface of the substrate W.
After the rinsing step is performed for a predetermined time, the 1 st compatible liquid supplying step is performed (step S4). In the 1 st compatible liquid supplying step, a soluble liquid (1 st compatible liquid) such as IPA compatible with both the rinse liquid and the molten processing liquid is supplied onto the upper surface of the substrate W, whereby the rinse liquid on the substrate W is replaced with the compatible liquid.
Specifically, when a predetermined time has elapsed from the start of the discharge of the compatible liquid, the rinse liquid valve 54 is closed. Thereby, the supply of the rinse liquid to the substrate W is stopped. Then, in a state where the opposing member 6 is located at the treatment position, the compatible liquid valve 56 is opened. Thereby, as shown in fig. 7C, the compatible liquid is supplied (discharged) from the center nozzle 12 toward the upper surface of the rotating substrate W (the 1 st compatible liquid supply step, the 1 st compatible liquid discharge step). In the 1 st compatible liquid supplying step, the rotating base 21 is rotated at a predetermined 1 st compatible liquid speed. The 1 st phase soluble liquid speed is, for example, 800 rpm.
Before the compatible liquid starts to be discharged, the shield lifting/lowering unit 74 may vertically move at least one shield 71 in order to switch the shield 71 that receives the liquid discharged from the substrate W.
The compatible liquid discharged from the central nozzle 12 contacts the upper surface of the rotating substrate W and then flows outward along the upper surface of the substrate W by centrifugal force. Therefore, the rinse liquid on the substrate W is replaced with the compatible liquid, and a liquid film of the compatible liquid is formed to cover the entire upper surface of the substrate W.
After the 1 st compatible liquid supplying step is performed for a predetermined period of time, the 1 st liquid film forming step is performed (step S5). In the 1 st liquid film forming step, the molten processing liquid is supplied onto the upper surface of the substrate W, whereby a liquid film of the molten processing liquid (the 1 st molten processing liquid film 100) is formed on the upper surface of the substrate W.
Specifically, when a predetermined time has elapsed from the start of the ejection of the compatible liquid, the compatible liquid valve 56 is closed. Thereby, the supply of the compatible liquid to the substrate W is stopped. Then, in a state where the opposing member 6 is located at the treatment position, the treatment liquid valve 55 is opened. As a result, as shown in fig. 7D, the molten processing liquid is supplied (discharged) from the center nozzle 12 toward the upper surface of the rotating substrate W (the 1 st molten processing liquid supply step, the 1 st molten processing liquid discharge step). In the 1 st molten processing liquid supply step, the rotating base 21 is rotated at a predetermined 1 st molten processing liquid speed. The 1 st molten processing liquid speed is, for example, 300 rpm.
Before the start of the discharge of the molten processing liquid, the shield elevating unit 74 may vertically move at least one shield 71 in order to switch the shield 71 that receives the liquid discharged from the substrate W.
The molten processing liquid discharged from the central nozzle 12 flows outward along the upper surface of the rotating substrate W by centrifugal force after contacting the upper surface of the substrate W. Therefore, the compatible liquid on the substrate W is replaced with the molten processing liquid, and the 1 st molten processing liquid film 100 covering the entire upper surface of the substrate W is formed (1 st liquid film forming step).
When a predetermined time has elapsed from the start of the discharge of the molten processing liquid, the processing liquid valve 55 is closed. Thereby, the supply of the molten processing liquid to the substrate W is stopped. After the supply of the molten processing liquid is stopped, the opposing member elevating unit 61 moves the opposing member 6 to a position below the processing position (for example, the following position). After the discharge of the molten processing liquid is stopped, the rotation speed of the spin base 21 is set to a predetermined 1 st film-forming speed. The 1 st film formation speed is, for example, 300rpm, and is the same as the 1 st molten processing liquid speed. Therefore, the substrate W is rotated at the same speed as that during the ejection of the molten processing liquid even after the ejection of the molten processing liquid is stopped. The substrate W is continuously rotated while the ejection of the molten processing liquid is stopped. Therefore, although the molten processing liquid is not newly supplied to the upper surface of the substrate W, the molten processing liquid is scattered to the outside of the substrate W by the centrifugal force. This reduces the amount of the molten processing liquid on the upper surface of the substrate W. Therefore, as shown in fig. 7E, the thickness of the 1 st molten processed liquid film 100 becomes thin (1 st thinning step).
After the 1 st molten treatment liquid film 100 on the upper surface of the substrate W is thinned, the 1 st solid film forming step is performed (step S6). In the 1 st solid film forming step, the 1 st molten treatment liquid film 100 is cooled and solidified to form the 1 st solid film 110.
Specifically, the coolant valve 59 is opened while the counter member 6 is maintained at a position below the processing position, simultaneously with the stop of the supply of the molten processing liquid or after a predetermined time has elapsed from the stop of the supply of the molten processing liquid. Thereby, as shown in fig. 7F, the refrigerant is supplied (discharged) from the lower surface nozzle 13 toward the lower surface of the rotating substrate W (the 1 st refrigerant supply step, the 1 st refrigerant discharge step). The rotation speed of the rotating base 21 is set to a predetermined 1 st cooling speed. The 1 st cooling rate is, for example, 300 rpm.
The refrigerant discharged from the lower surface nozzle 13 flows outward along the lower surface of the rotating substrate W by centrifugal force after contacting the lower surface of the substrate W, and is diffused over the entire lower surface of the substrate W. The substrate W is cooled by the refrigerant diffused over the entire lower surface of the substrate W (substrate cooling step). The 1 st molten process liquid film 100 on the upper surface of the substrate W is cooled by a cooling medium via the substrate W (1 st cooling step). Since the temperature of the refrigerant discharged from the lower surface nozzle 13 is lower than the solidification point of the solid substance, as shown in fig. 7F, the solid substance on the upper surface of the substrate W (the 1 st molten process liquid film 100) is solidified to form the 1 st solid film 110 on the upper surface of the substrate W (the 1 st solidification step, the 1 st solid film forming step). The 1 st solid film 110 contains a solid-forming substance in a solid state. In this embodiment, the lower surface nozzle 13 functions as a solid forming unit. The lower surface nozzle 13 is also a cooling unit that cools the molten processing liquid on the substrate W to a temperature below the solidification point of the solid substance.
As shown in fig. 8A, when the 1 st solid film 110 is formed, the object 150 to be removed such as particles attached to the pattern surface 165 of the substrate W is separated from the substrate W and held in the 1 st solid film 110.
After the 1 st solid film 110 is formed on the upper surface of the substrate W, the 1 st solid film peeling and removing process is performed (step S7). In the 1 st solid film peeling and removing step, the 1 st solid film 110 is peeled and removed from the upper surface of the substrate W by supplying the peeling liquid to the upper surface of the substrate W.
Specifically, the opposing member elevating unit 61 moves the opposing member 6 to the upper position. The 2 nd nozzle moving unit 37 moves the 2 nd moving nozzle 11 to the processing position in a state where the opposing member 6 is located at the upper position. The processing position of the 2 nd moving nozzle 11 is, for example, a center position.
Then, the common valve 51, the IPA valve 52, and the DIW valve 53 are opened. As a result, as shown in fig. 7G, the IPA/DIW mixed liquid (the stripping liquid) is supplied (discharged) from the 2 nd moving nozzle 11 toward the upper surface of the rotating substrate W (the upper surface of the 1 st solid film 110) (the stripping liquid supply step and the stripping liquid discharge step).
When the common valve 51, the IPA valve 52, and the DIW valve 53 are opened, the refrigerant valve 59 is kept opened. That is, the 1 st cooling step (substrate cooling step) is also continued in the 1 st solid film peeling and removing step. This makes it possible to peel the 1 st solid film 110 from the upper surface of the substrate W while maintaining the 1 st solid film 110 in a solid state.
In the stripping liquid supply step, the spin base 21 is rotated at a predetermined stripping processing speed. The peeling speed is, for example, 10 to 1000 rpm.
Before the peeling liquid starts to be discharged, the shield elevating unit 74 may vertically move at least one shield 71 in order to switch the shield 71 that receives the liquid discharged from the substrate W.
The stripping liquid discharged from the 2 nd moving nozzle 11 contacts the upper surface of the rotating substrate W, and then flows outward along the upper surface of the substrate W by centrifugal force, and spreads over the entire upper surface of the substrate W. The peeling liquid adhering to the upper surface of the 1 st solid film 110 passes through the 1 st solid film 110 to reach the interface between the upper surface (the pattern surface 165) of the substrate W and the 1 st solid film 110. The release liquid may penetrate through the 1 st solid film 110 by partially dissolving the 1 st solid film 110 to form a through-hole, or may penetrate through the 1 st solid film 110 by penetrating the 1 st solid film 110.
As shown in fig. 8B, the 1 st solid film 110 is broken into pieces by the peeling liquid and peeled from the substrate W while holding the object 150 to be removed (peeling step). Then, the 1 st solid film 110 is removed from the substrate W by being washed with the peeling liquid, and the object 150 to be removed is removed from the upper surface of the substrate W together with the 1 st solid film 110 (the 1 st removal step, the 1 st solid film peeling and removing step).
After the 1 st solid film 110 is removed from the upper surface of the substrate W, that is, after the peeling liquid supply step is completed, the 2 nd compatible liquid supply step is performed (step S8). In the 2 nd compatible liquid supplying step, a soluble liquid (2 nd compatible liquid) such as IPA compatible with both the stripping liquid and the molten processing liquid is supplied to the upper surface of the substrate W, whereby the stripping liquid on the substrate W is replaced with the compatible liquid.
Specifically, when a predetermined time has elapsed from the start of the discharge of the stripping liquid, the common valve 51, the IPA valve 52, and the DIW valve 53 are closed. Thereby, the supply of the IPA/DIW mixed liquid (stripping liquid) to the substrate W is stopped. Further, the refrigerant valve 59 is also closed. Thereby, the supply of the cooling medium to the substrate W is stopped.
Then, the 2 nd nozzle moving unit 37 moves the 2 nd moving nozzle 11 to the home position. In a state where the 2 nd moving nozzle 11 is retracted to the home position, the opposing member elevating unit 61 moves the opposing member 6 to the processing position. Then, the phase liquid valve 56 is opened. As a result, as shown in fig. 7H, the soluble liquid such as IPA is supplied (discharged) from the center nozzle 12 toward the upper surface of the rotating substrate W (the 2 nd compatible liquid supply step, the 2 nd compatible liquid discharge step). In the 2 nd compatible liquid supplying step, the rotating base 21 is rotated at a predetermined 2 nd compatible liquid speed. The 2 nd phase soluble liquid speed is, for example, 800 rpm.
Before the compatible liquid starts to be discharged, the shield lifting/lowering unit 74 may vertically move at least one shield 71 in order to switch the shield 71 that receives the liquid discharged from the substrate W.
The compatible liquid discharged from the central nozzle 12 contacts the upper surface of the rotating substrate W and then flows outward along the upper surface of the substrate W by centrifugal force. Therefore, the stripping liquid on the substrate W is replaced with the compatible liquid, and a liquid film of the compatible liquid is formed to cover the entire upper surface of the substrate W.
After the 2 nd compatible liquid supplying step is performed for a predetermined period of time, the 2 nd liquid film forming step is performed (step S9). In the 2 nd liquid film forming step, the molten processing liquid is supplied to the upper surface of the substrate W, thereby forming a liquid film of the molten processing liquid (the 2 nd molten processing liquid film 101) on the upper surface of the substrate W.
Specifically, the compatible liquid valve 56 is closed when a predetermined time has elapsed from the start of the discharge of the compatible liquid. Thereby, the supply of the compatible liquid to the substrate W is stopped. Then, in a state where the opposing member 6 is located at the treatment position, the treatment liquid valve 55 is opened. As a result, as shown in fig. 7I, the molten processing liquid is supplied (discharged) from the center nozzle 12 toward the upper surface of the rotating substrate W (the 2 nd molten processing liquid supply step, the 2 nd molten processing liquid discharge step). In the 2 nd molten processing liquid supply step, the rotating base 21 is rotated at a predetermined 2 nd molten processing liquid speed. The 2 nd molten processing liquid speed is, for example, 300 rpm.
Before the start of the discharge of the molten processing liquid, the shield elevating unit 74 may vertically move at least one shield 71 in order to switch the shield 71 that receives the liquid discharged from the substrate W.
The molten processing liquid discharged from the central nozzle 12 flows outward along the upper surface of the rotating substrate W by centrifugal force after contacting the upper surface of the substrate W. Therefore, as shown in fig. 7I, the compatible liquid on the substrate W is replaced with the molten processing liquid, and a 2 nd molten processing liquid film 101 covering the entire upper surface of the substrate W is formed (2 nd liquid film forming step).
The molten processing liquid supplied to the upper surface of the substrate W in the 2 nd liquid film forming step is discharged from the same discharge nozzle (central nozzle 12) as that in the 1 st liquid film forming step. The molten processing liquid stored in the single processing liquid tank 90 is supplied to the 2 nd pipe 32 of the center nozzle 12. That is, in the 1 st liquid film forming step and the 2 nd liquid film forming step, the molten processing liquid is supplied from the common processing liquid tank 90 to the center nozzle 12, and the molten processing liquid is discharged from the center nozzle 12 toward the upper surface of the substrate W.
When a predetermined time has elapsed from the start of the discharge of the molten processing liquid, the processing liquid valve 55 is closed. Thereby, the supply of the molten processing liquid to the substrate W is stopped. After the supply of the molten processing liquid is stopped, the opposing member elevating unit 61 moves the opposing member 6 to a position below the processing position (for example, the following position). After the discharge of the molten processing liquid is stopped, the rotation speed of the spin base 21 is set to a predetermined 2 nd thinning speed. The 2 nd film formation speed is, for example, 300rpm, and is the same as the 2 nd molten processing liquid speed. Therefore, the substrate W is rotated at the same speed as that during the ejection of the molten processing liquid even after the ejection of the molten processing liquid is stopped.
The substrate W is continuously rotated while the ejection of the molten processing liquid is stopped. Therefore, although the molten processing liquid is not newly supplied to the upper surface of the substrate W, the molten processing liquid is scattered to the outside of the substrate W by the centrifugal force. This reduces the amount of the molten processing liquid on the upper surface of the substrate W. Therefore, as shown in fig. 7J, the thickness of the 2 nd molten processed liquid film 101 becomes thin (2 nd thinning step).
After the film of the 2 nd molten treatment liquid film 101 on the upper surface of the substrate W is thinned, the 2 nd solid film forming step is performed (step S10). In the 2 nd solid film forming step, the 2 nd molten treatment liquid film 101 is cooled and solidified to form the 2 nd solid film 111.
Specifically, simultaneously with the stop of the supply of the molten processing liquid or after a predetermined time has elapsed from the stop of the supply of the molten processing liquid, the coolant valve 59 is opened while the counter member 6 is maintained at a position below the processing position. Thereby, as shown in fig. 7K, the refrigerant is supplied (discharged) from the lower surface nozzle 13 toward the lower surface of the rotating substrate W (the 2 nd refrigerant supply step, the 2 nd refrigerant discharge step). The rotation speed of the turntable 21 is set to a predetermined 2 nd cooling speed. The 2 nd cooling rate is, for example, 300 rpm.
The refrigerant discharged from the lower surface nozzle 13 flows outward along the lower surface of the rotating substrate W by centrifugal force after contacting the lower surface of the substrate W, and is diffused over the entire lower surface of the substrate W. The substrate W is cooled by the refrigerant diffused over the entire lower surface of the substrate W (substrate cooling step). The 2 nd molten treatment liquid film 101 on the upper surface of the substrate W is cooled by a cooling medium via the substrate W (2 nd cooling step). Since the temperature of the refrigerant discharged from the lower surface nozzle 13 is lower than the solidification point of the solid substance, as shown in fig. 7K, the solid substance (the 2 nd molten treatment liquid film 101) on the upper surface of the substrate W is solidified, and the 2 nd solid film 111 is formed on the upper surface of the substrate W (the 2 nd solidification step, the 2 nd solid film forming step).
The 2 nd solid film 111 contains a solid substance in a solid state, as in the 1 st solid film 110 (see fig. 7F). As shown in fig. 9A, the thickness T2 of the 2 nd solid film 111 is preferably set to be thicker than the pattern height T1 and as thin as possible.
After the 2 nd solid film 111 is formed on the upper surface of the substrate W, the 2 nd solid film vaporization and removal process is performed (step S11). In the 2 nd solid film vaporization removal step, the 2 nd solid film 111 is sublimated without passing through a liquid state, thereby removing the 2 nd solid film 111 from the upper surface of the substrate W.
Specifically, the 1 st gas valve 57 and the 2 nd gas valve 58 are opened while the counterpart 6 is maintained at a position below the processing position. As a result, as shown in fig. 7L, an inert gas such as nitrogen gas is supplied to the space S between the opposing surface 6a of the opposing member 6 and the upper surface of the substrate W. When the 1 st gas valve 57 and the 2 nd gas valve 58 are opened, the refrigerant valve 59 is maintained in an open state. That is, the 2 nd cooling step (substrate cooling step) is also continued in the 2 nd solid film vaporization removal step. Therefore, the supply of the inert gas into the space S is performed while maintaining the state in which the 2 nd solid film 111 is formed on the substrate W.
By supplying an inert gas to the space S while maintaining the 2 nd solid film 111, the solid substance in a gaseous state is pushed out from the space S, and the partial pressure of the solid substance in the space S is reduced. Thereby, the solid substance sublimates so that the partial pressure of the solid substance in the space S approaches the vapor pressure (sublimation step, vaporization step). Further, since the opposing member 6 is close to the upper surface of the substrate W, the ambient gas in the space S is easily replaced with the inert gas. Therefore, the partial pressure of the solid-forming substance in the space S can be efficiently reduced.
The rotation speed of the rotating base 21 is set to a predetermined sublimation speed. The sublimation rate is, for example, 300 rpm. The sublimation of the 2 nd solid film 211 is promoted by the rotation on the substrate W (sublimation step, vaporization step).
Finally, as shown in fig. 9B, the solid substance in a solid state located in the concave portion 162 of the uneven pattern 160 is completely sublimated, and the 2 nd solid film 111 is removed (the 2 nd removal step, the 2 nd solid film vaporization removal step). In this way, the 4 th pipe body 34 (the center nozzle 12), the 5 th pipe body 35, and the rotation motor 23 function as a vaporization unit (sublimation unit).
The FFU29 and the exhaust unit 8 may increase the flow rate of the downflow to promote ventilation in the chamber 4. Thereby, sublimation of the 2 nd solid film 111 is promoted. That is, FFU29 and exhaust unit 8 also function as a vaporizing unit. The chamber 4 may be depressurized by adjusting the exhaust valve 27 to increase the exhaust flow rate (depressurizing step). Sublimation of the 2 nd solid film 111 is promoted by the reduced pressure in the chamber 4, that is, the reduced pressure of the atmosphere gas around the 2 nd solid film 111.
The thicker the 2 nd molten processed liquid film 101 is, the larger the internal stress (strain) remaining in the 2 nd solid film 111 is. By making the 2 nd molten treatment liquid film 101 thin, the internal stress remaining in the 2 nd solid film 111 can be reduced.
Further, the thinner the 2 nd solid film 111 is, the less residue remains on the upper surface of the substrate W after the 2 nd solid film vaporization removal step. By making the film 101 of the 2 nd molten treatment liquid thinner, the 2 nd solid film 111 can be made thinner. This can suppress the generation of residue after the 2 nd solid film vaporization removal step.
After the 2 nd solid film 111 is removed from the upper surface of the substrate W, a drying process is performed to further dry the upper surface of the substrate W (step S12).
Specifically, the rotation motor 23 sets the rotation speed of the turntable 21 to a predetermined drying speed while the counter member 6 is maintained at the lower position. The drying speed is, for example, 1500 rpm. Also, the 1 st gas valve 57 is closed. Thereby, the supply of the inert gas from the center nozzle 12 is stopped.
After the drying process, the rotation of the rotary base 21 is stopped, the 2 nd gas valve 58 is closed, and the supply of the inert gas from the 5 th pipe 35 is stopped. Then, the relative member elevating unit 61 moves the relative member 6 to the upper position, and the shield elevating unit 74 moves the plurality of shields 71 to the lower position. Thereafter, the transfer robot CR enters the processing unit 2, picks up the processed substrate W from the spin chuck 5, and carries it out of the processing unit 2 (step S13). The substrate W is transferred from the transfer robot CR to the transfer robot IR, and is stored in the carrier C by the transfer robot IR.
According to embodiment 1, the 1 st solid film 110 is formed by solidifying the 1 st molten treatment liquid film 100 on the upper surface of the substrate W. Then, the 1 st solid film 110 is peeled and removed from the upper surface of the substrate W by the peeling liquid supplied to the upper surface of the substrate W. That is, the 1 st solid film 110 can be removed from the upper surface of the substrate W while maintaining a solid state. Therefore, the removal object 150 can be prevented or inhibited from falling off the 1 st solid film 110, and reattachment of the removal object 150 to the upper surface of the substrate W can be prevented or inhibited. Therefore, the upper surface of the substrate W can be cleaned satisfactorily.
After the 1 st solid film 110 is removed from the upper surface of the substrate W, the same molten processing liquid is supplied again to the upper surface of the substrate W, thereby forming a 2 nd molten processing liquid film 101 of the molten processing liquid. Then, the 2 nd solid film 111 is formed by solidifying the 2 nd molten treatment liquid film 101. The 2 nd solid film 111 is sublimated without passing through a liquid state and is removed from the upper surface of the substrate W. Therefore, the surface tension acting on the upper surface of the substrate from the molten processing liquid can be reduced. Therefore, the upper surface of the substrate W can be dried while suppressing or preventing collapse of the uneven pattern 160 formed on the upper surface of the substrate W.
As described above, the upper surface of the substrate W can be cleaned satisfactorily and dried satisfactorily.
In addition, according to embodiment 1, the 1 st solid film 110 removed by peeling and the 2 nd solid film 111 removed by vaporization are formed of the same kind of molten processing liquid. Therefore, the substrate processing apparatus 1 can be simplified as compared with the substrate processing in which the 1 st solid film 110 and the 2 nd solid film 111 are formed of the processing liquids different in kind from each other (different in chemical formula of the solid forming substance). This can suppress the device cost and the occupied area (installation area) of the device.
Specifically, in the substrate processing apparatus 1 according to embodiment 1, the molten processing liquid supplied from the common processing liquid tank 90 to the center nozzle 12 is discharged from the center nozzle 12 toward the upper surface of the substrate W in both the 1 st liquid film forming step and the 2 nd liquid film forming step. Therefore, the number of processing liquid tanks can be reduced compared to a method in which the processing liquid discharged from the center nozzle 12 in the 1 st liquid film forming step and the processing liquid discharged from the center nozzle 12 in the 2 nd liquid film forming step are supplied from different processing liquid tanks to the center nozzle 12. Therefore, the substrate processing apparatus 1 can be simplified.
The "same type of molten processed liquid" means that the chemical formulas of the solid-forming substances in the molten processed liquids are the same, and the "different types of molten processed liquids" means that the chemical formulas of the solid-forming substances in the molten processed liquids are different. Therefore, even if the temperatures of the molten processing liquids are different from each other, the molten processing liquids for forming the 1 st solid film 110 and the molten processing liquids for forming the 2 nd solid film 111 are the same as each other as long as the chemical formulas of the solid-forming substances of the two molten processing liquids are the same.
Further, since the 1 st solid film 110 removed by peeling and the 2 nd solid film 111 removed by vaporization are formed from the same molten processing liquid, even when the residue of the 1 st solid film 110 is adhered to the upper surface of the substrate W after the 1 st solid film 110 is removed by peeling with the peeling liquid, the residue of the 1 st solid film 110 can be removed together with the 2 nd solid film 111 when the 2 nd solid film 111 is removed by vaporization. Therefore, since the residue of the 1 st solid film 110 can be reliably removed from the upper surface of the substrate W, the upper surface of the substrate W can be cleaned satisfactorily and dried satisfactorily.
In addition, according to embodiment 1, the object 150 to be removed existing on the upper surface of the substrate W is held by the 1 st solid film 110 when the 1 st solid film 110 is formed, and is separated from the upper surface of the substrate W when the 1 st solid film 110 is peeled off from the upper surface of the substrate W. Thereafter, the 1 st solid film 110 with the removal object 150 held thereon is removed from the upper surface of the substrate W by the stripping liquid. Therefore, the removal object 150 separated from the upper surface of the substrate W can be inhibited or prevented from adhering to the upper surface of the substrate W again.
Further, according to embodiment 1, the 1 st solid film 110 is formed by cooling the 1 st molten treatment liquid film 100 so that the 1 st molten treatment liquid film 100 is solidified, and the 2 nd solid film 111 is formed by cooling the 2 nd molten treatment liquid film 101 so that the 2 nd molten treatment liquid film 101 is solidified. That is, the 1 st solid film 110 and the 2 nd solid film 111 can be formed by a common method of cooling the molten processing liquid.
Here, in the case where the 1 st solid film 110 and the 2 nd solid film 111 are formed by different methods unlike the embodiment 1, units necessary for the respective methods have to be provided in the substrate processing apparatus 1. For example, when one of the 1 st solid film 110 and the 2 nd solid film 111 is formed by heating the processing liquid and the other is formed by cooling the processing liquid, it is necessary to provide both a means for heating the processing liquid on the substrate W and a means for cooling the processing liquid on the substrate W.
If the 1 st solid film 110 and the 2 nd solid film 111 can be formed using a common solid forming unit (lower surface nozzle 13) as in embodiment 1, the substrate processing apparatus 1 can be simplified.
In addition, according to embodiment 1, the 1 st cooling step (substrate cooling step) performed in the 1 st solidification step is also continued in the 1 st solid film peeling and removing step. Thus, even during the 1 st solid film peeling and removing step, the solid substance on the substrate W can be maintained in a solid state without melting. Therefore, the 1 st solid film 110 can be reliably removed from the upper surface of the substrate W while maintaining a solid state. Therefore, the removal object 150 can be further prevented or inhibited from coming off the 1 st solid film 110, and the removal object 150 can be further prevented or inhibited from adhering to the upper surface of the substrate W again.
In addition, according to embodiment 1, the 2 nd cooling step (substrate cooling step) performed in the 2 nd solidification step is also continued in the 2 nd solid film vaporization removal step. Thus, even during the 2 nd solid film vaporization and removal step, the solid substance on the substrate W can be maintained in a solid state without melting. Therefore, the 2 nd solid film 111 can be vaporized while the change of the 2 nd solid film 111 into a liquid is suppressed or prevented. Therefore, the surface tension acting on the upper surface of the substrate W can be further reduced.
Further, according to embodiment 1, after the rinse liquid supply step is completed and before the first liquid film forming step 1 is started, a compatible liquid that is compatible with both the rinse liquid and the molten processing liquid is supplied to the upper surface of the substrate W (first compatible liquid supply step 1). Therefore, even when the rinse liquid and the molten processing liquid are difficult to mix, the rinse liquid on the substrate W can be replaced with the molten processing liquid by replacing the rinse liquid on the substrate W with the compatible liquid and then replacing the compatible liquid on the substrate W with the molten processing liquid. Therefore, the rinse liquid and the molten processing liquid can be selected regardless of whether or not they are mixed. Therefore, the degree of freedom in selecting the rinse liquid and the molten processing liquid is improved.
Further, according to embodiment 1, after the 1 st solid film removal step (the separation liquid supply step) is completed and before the 2 nd liquid film formation step is started, a compatible liquid that is compatible with both the separation liquid and the molten processing liquid is supplied to the upper surface of the substrate W (the 2 nd compatible liquid supply step). Therefore, even when the stripping liquid and the molten processing liquid are not easily mixed, the stripping liquid on the substrate W can be replaced with the molten processing liquid by replacing the stripping liquid on the substrate W with the compatible liquid and then replacing the compatible liquid on the substrate W with the molten processing liquid. Therefore, the stripping liquid and the molten processing liquid can be selected regardless of whether they are mixed or not. Therefore, the degree of freedom in selecting the stripping liquid and the molten processing liquid is improved.
As described above, in embodiment 1, the lower surface nozzle 13 is an example of the solid forming means. However, the solid forming unit is not limited to the lower surface nozzle 13. As shown in fig. 10, the cooling plate 120 facing the lower surface of the substrate W from below can also be used as a solid forming unit (cooling unit).
The cooling plate 120 is disposed between the upper surface of the spin base 21 and the lower surface of the substrate W held by the chuck pins 20. The upper surface 120a of the cooling plate 120 is opposed to the entire area of the lower surface of the substrate W. Even if the rotating base 21 rotates, the cooling plate 120 does not rotate.
The cooling plate 120 has a built-in refrigerant pipe 121. A refrigerant supply pipe 122 for supplying the refrigerant to the built-in refrigerant pipe 121 and a refrigerant discharge pipe 123 for discharging the refrigerant from the built-in refrigerant pipe 121 are connected to the built-in refrigerant pipe 121. A hollow lift shaft 125 extending in the vertical direction along the rotation axis a1 is coupled to the lower surface of the cooling plate 120. The elevating shaft 125 is inserted into a through hole 21a formed in the center of the rotating base 21 and the hollow rotating shaft 22.
The refrigerant supply pipe 122 and the refrigerant discharge pipe 123 are inserted through the elevating shaft 125. A refrigerant supply valve 124 is interposed in the refrigerant supply pipe 122. The refrigerant is supplied to the built-in refrigerant pipe 121 by opening the refrigerant supply valve 124. The cooling plate 120 is cooled by supplying the refrigerant to the built-in refrigerant pipe 121.
A cooler elevating unit 126 for elevating and lowering the cooling plate 120 relative to the rotating base 21 is connected to the elevating shaft 125. The cooler elevating unit 126 includes, for example, a ball screw mechanism (not shown) and an electric motor (not shown) that gives a driving force thereto. The cooler elevating unit 126 is also called a cooler elevator.
The cooling plate 120 is disposed at a position in contact with or close to the lower surface of the substrate W by the cooler elevating unit 126, and thus the molten processing liquid on the substrate W can be cooled via the substrate W.
The cooling plate 120 may be configured to lift the substrate W from the chuck pins 20 and support the substrate W on the upper surface 120a during the raising. For this reason, the plurality of chuck pins 20 are required to be configured to be openable and closable between a closed state in which the substrate W is gripped by being brought into contact with the peripheral edge of the substrate W and an open state in which the substrate W is retracted from the peripheral edge of the substrate W, and to be separated from the peripheral edge of the substrate W in the open state to release the gripping, while being brought into contact with the lower surface of the peripheral edge of the substrate W to support the substrate W from below.
Although not shown, if the counter member 6 is configured to be able to supply the refrigerant to the inside thereof, the counter member 6 may be used as a solid forming unit.
< embodiment 2 >
Fig. 11 is a schematic view of a processing unit 2P provided in a substrate processing apparatus 1P according to embodiment 2 of the present invention. In fig. 11 and fig. 12A to 12I, 13 and 14 described later, the same reference numerals as in fig. 1 and the like are given to the same components as those shown in fig. 1 to 10, and the description thereof will be omitted.
The processing unit 2P according to embodiment 2 is mainly different from the processing unit 2 (see fig. 2) according to embodiment 1 in that a mixed processing liquid is used instead of the molten processing liquid.
Specifically, the 2 nd pipe 32 of the center nozzle 12 is an example of a processing liquid supply unit that supplies a processing liquid prepared by mixing a solvent and a solute to the upper surface of the substrate W. In embodiment 2, the treatment liquid discharged from the 2 nd pipe 32 is a solution in which a solid substance as a solute is dissolved in a solvent. A treatment liquid composed of a solid substance as a solute and a solvent for dissolving the solid substance is referred to as a mixed treatment liquid. Therefore, the 2 nd pipe 32 is also a mixed treatment liquid supply unit.
In embodiment 2, as in embodiment 1, the 2 nd pipe 32 is connected to one end of a treatment liquid pipe 45 for guiding the mixed treatment liquid to the 2 nd pipe 32, and the other end of the treatment liquid pipe 45 is connected to a treatment liquid tank 90 (see also fig. 3). In embodiment 2, a mixed processing liquid is stored in the processing liquid tank 90. When the treatment liquid valve 55 is opened, the mixed treatment liquid in the treatment liquid tank 90 is sent to the treatment liquid pipe 45 by the pump 94. The mixed processing liquid fed to the processing liquid pipe 45 passes through the filter 95, is supplied to the 2 nd pipe 32 (the center nozzle 12), and is continuously discharged from the 2 nd pipe 32 (the center nozzle 12) toward the central region of the upper surface of the substrate W.
The solvent contained in the mixed treatment liquid is maintained in a liquid state at normal temperature, and the solute contained in the mixed treatment liquid is maintained in a solid state at normal temperature. Therefore, the solvent is evaporated by heating or the like, and a solid substance in a solid state is precipitated. The solid substance in a solid state is preferably a sublimable substance which can change its state to a gaseous state without passing through a liquid state by blowing an inert gas or reducing the pressure of the ambient gas.
Examples of the sublimable substance which is maintained in a solid state at room temperature include alcohols such as 2-methyl-2-propanol (also known as t-butyl alcohol) and cyclohexanol, hydrofluorocarbons, 1, 3, 5-trioxane (also known as trioxane), camphor (also known as camphor), naphthalene, and iodine.
For example, when camphor is used as the sublimable substance, IPA, methanol, acetone, PGEE, or the like can be used as the solvent. The freezing point of camphor is 175-177 ℃.
In embodiment 2, the lower surface nozzle 13 is connected to a heat medium pipe 80 for guiding the heat medium to the lower surface nozzle 13. The heat medium valve 81 is controlled by the controller 3 (see fig. 4). When the heat medium valve 81 interposed in the heat medium pipe 80 is opened, the heat medium is continuously discharged from the lower surface nozzle 13 toward the central region of the lower surface of the substrate W.
The heat medium discharged from the lower surface nozzle 13 is, for example, DIW (high temperature DIW) having a temperature higher than the normal temperature. The heat medium discharged from the lower surface nozzle 13 is preferably at a temperature lower than the boiling point of the solvent of the mixed treatment liquid so as not to boil the mixed treatment liquid on the substrate W. In the case where the solvent is IPA, the high temperature DIW is preferably below the boiling point of IPA, i.e., 82.4 deg.C.
The heat medium discharged from the lower surface nozzle 13 is not limited to the high temperature DIW, and may be a liquid obtained by heating a liquid other than the DIW, for example, any one of liquids listed as rinse liquids, to a high temperature. The heat medium discharged from the lower surface nozzle 13 may be a gas, and may be, for example, nitrogen gas (inert gas) having a temperature higher than normal temperature.
In the case where the solid substance in the mixed treatment liquid is camphor, the stripping liquid is preferably an IPA/DIW mixed liquid. In addition, as the compatible liquid, a liquid having compatibility with the mixed treatment liquid, rinse liquid, and stripping liquid is used. When the mixed treatment liquid is a mixed liquid of camphor and IPA, the rinse liquid is DIW, and the stripping liquid is an IPA/DIW mixed liquid, IPA is preferably used as the compatible liquid.
Fig. 12A to 12I are schematic cross-sectional views for explaining substrate processing performed by the substrate processing apparatus 1P of embodiment 2. In the substrate processing apparatus 1P according to embodiment 2, the same substrate processing as that performed by the substrate processing apparatus 1 according to embodiment 1 (see fig. 6) can be performed. Hereinafter, the substrate processing performed by the substrate processing apparatus 1P will be described mainly with reference to fig. 11 and 6. Reference is made to fig. 12A to 12I as appropriate.
First, similarly to the substrate processing of embodiment 1, substrate loading (step S1) to the 1 st compatible liquid supplying step (step S4) are performed.
After the 1 st compatible liquid supplying step is performed for a predetermined period of time, the 1 st liquid film forming step is performed (step S5). In the 1 st liquid film forming step, the mixed treatment liquid is supplied to the upper surface of the substrate W, whereby a liquid film of the mixed treatment liquid (the 1 st mixed treatment liquid film 200) is formed on the upper surface of the substrate W.
Specifically, the compatible liquid valve 56 is closed when a predetermined time has elapsed from the start of the discharge of the compatible liquid. Thereby, the supply of the compatible liquid to the substrate W is stopped. Then, in a state where the opposing member 6 is located at the treatment position, the treatment liquid valve 55 is opened. As a result, as shown in fig. 12A, the mixed processing liquid is supplied (discharged) from the center nozzle 12 toward the upper surface of the rotating substrate W (the 1 st mixed processing liquid supply step, the 1 st mixed processing liquid discharge step). In the 1 st mixed treatment liquid supply step, the spin base 21 is rotated at a predetermined 1 st mixed treatment liquid speed. The 1 st mixed treatment liquid speed is, for example, 300 rpm.
Before the mixed treatment liquid starts to be discharged, the shield elevating unit 74 may vertically move at least one shield 71 in order to switch the shield 71 that receives the liquid discharged from the substrate W.
The mixed processing liquid discharged from the center nozzle 12 flows outward along the upper surface of the rotating substrate W by centrifugal force after contacting the upper surface of the substrate W. Therefore, the compatible liquid on the substrate W is replaced with the mixed treatment liquid, and the 1 st mixed treatment liquid film 200 covering the entire upper surface of the substrate W is formed (1 st liquid film forming step).
When a predetermined time has elapsed from the start of the discharge of the mixed treatment liquid, the treatment liquid valve 55 is closed. Thereby, the supply of the mixed processing liquid to the substrate W is stopped. After the supply of the mixed treatment liquid is stopped, the opposing member elevating unit 61 moves the opposing member 6 to a position below the treatment position (for example, the following position).
After the discharge of the mixed treatment liquid is stopped, the rotation speed of the spin base 21 is set to a predetermined 1 st thinning speed. The 1 st film formation speed is, for example, 300rpm, and is the same as the 1 st mixed treatment liquid speed. Therefore, the substrate W is rotated at the same speed as that during the ejection of the mixed treatment liquid even after the ejection of the mixed treatment liquid is stopped.
While the substrate W is continuously rotated, the discharge of the mixed treatment liquid is stopped. Therefore, although the mixed processing liquid is not newly supplied to the upper surface of the substrate W, the mixed processing liquid is scattered to the outside of the substrate W by the centrifugal force. This reduces the amount of the mixed processing liquid on the upper surface of the substrate W. Therefore, as shown in fig. 12B, the thickness of the 1 st mixed treatment liquid film 200 becomes thin (1 st thinning step).
After the 1 st mixed treatment liquid film 200 on the upper surface of the substrate W is thinned, the 1 st solid film forming step is performed (step S6). In the 1 st solid film forming step, the 1 st solid film 210 is formed by evaporating the solvent in the 1 st mixed treatment liquid film 200.
Specifically, simultaneously with the stop of the supply of the mixed treatment liquid or after a predetermined time has elapsed from the stop of the supply of the mixed treatment liquid, the heat medium valve 81 is opened while the facing member 6 is maintained at the position below the treatment position. Thereby, as shown in fig. 12C, the heat medium is supplied (discharged) from the lower surface nozzle 13 toward the lower surface of the rotating substrate W (the 1 st heat medium supply step, the 1 st heat medium discharge step).
The heat medium discharged from the lower surface nozzle 13 flows outward along the lower surface of the rotating substrate W by centrifugal force after contacting the lower surface of the substrate W, and spreads over the entire lower surface of the substrate W. The substrate W is heated by the heat medium diffused over the entire lower surface of the substrate W (substrate heating step). The 1 st mixed treatment liquid film 200 on the upper surface of the substrate W is heated by the heat medium diffused over the entire lower surface of the substrate W through the substrate W (1 st heating step). The evaporation of the solvent in the 1 st mixed treatment liquid film 200 is promoted by heating the 1 st mixed treatment liquid film 200 through the substrate W.
The rotation speed of the rotary base 21 is set to a predetermined 1 st heating speed. The 1 st heating rate is, for example, 300 rpm. The evaporation of the solvent in the 1 st mixed treatment liquid film 200 is promoted on the substrate W by the rotation.
While the 1 st mixed liquid treatment film 200 on the substrate W is heated by the heat medium, a gas such as an inert gas may be blown onto the 1 st mixed liquid treatment film 200. Specifically, the 2 nd gas valve 58 is opened. Thereby, as shown in fig. 12C, the gas is ejected from the 5 th pipe 35. The gas discharged from the 5 th pipe 35 is sent into the space S between the counter member 6 and the substrate W, and blown onto the upper surface of the 1 st mixed treatment liquid film 200 (see fig. 12B) (the 1 st gas blowing step). By the blowing of the gas, the evaporation of the solvent in the 1 st mixed treatment liquid film 200 is promoted.
In the formation of the 1 st solid film 210, the chamber 4 may be depressurized by adjusting the exhaust valve 27 to increase the exhaust flow rate (depressurizing step). The evaporation of the solvent in the 1 st mixed treatment liquid film 200 is promoted by the reduced pressure in the chamber 4, that is, the reduced pressure of the atmosphere gas around the 1 st solid film 210.
The solvent in the 1 st mixed liquid film 200 is evaporated by heating with a heat medium, blowing of gas, pressure reduction in the chamber 4, and rotation of the substrate W, and a solid substance is deposited on the upper surface of the substrate W. The 1 st solid film 210 is formed on the upper surface of the substrate W by deposition of the solid substance (1 st deposition step, 1 st solid film formation step). The 1 st solid film 210 contains a solid-forming substance precipitated by evaporation of the solvent in a solid state. In this embodiment, the lower surface nozzle 13, the 5 th pipe body 35, the exhaust unit 8, the FFU29, and the rotary motor 23 function as a solid forming unit. The lower surface nozzle 13 is also a heating unit that heats the mixed processing liquid on the substrate W.
In the same manner as in embodiment 1, when the 1 st solid film 210 is formed, the object 150 to be removed such as particles attached to the pattern surface 165 of the substrate W is separated from the substrate W and held in the 1 st solid film 210 (see fig. 8A).
After the 1 st solid film 210 is formed on the upper surface of the substrate W, the 1 st solid film peeling and removing process is performed (step S7). In the 1 st solid film peeling and removing step, the 1 st solid film 210 is peeled and removed from the upper surface of the substrate W by supplying the peeling liquid to the upper surface of the substrate W.
Specifically, the heating medium valve 81 and the 2 nd gas valve 58 are closed. Thereby, the supply of the heat medium and the inert gas to the substrate W is stopped. Then, the opposing member elevating unit 61 moves the opposing member 6 to the upper position. The 2 nd nozzle moving unit 37 moves the 2 nd moving nozzle 11 to the processing position in a state where the opposing member 6 is located at the upper position. The processing position of the 2 nd moving nozzle 11 is, for example, a center position.
Then, the common valve 51, the IPA valve 52, and the DIW valve 53 are opened. As a result, as shown in fig. 12D, the IPA/DIW mixed liquid (the stripping liquid) is supplied (discharged) from the 2 nd moving nozzle 11 toward the upper surface of the rotating substrate W (the upper surface of the 1 st solid film 210) (the stripping liquid supply step and the stripping liquid discharge step). In the stripping liquid supply step, the spin base 21 is rotated at a predetermined stripping processing speed. The peeling speed is, for example, 10 to 1000 rpm.
The stripping liquid discharged from the 2 nd moving nozzle 11 contacts the upper surface of the rotating substrate W, and then flows outward along the upper surface of the substrate W by centrifugal force, and spreads over the entire upper surface of the substrate W. The peeling liquid adhering to the upper surface of the 1 st solid film 210 passes through the 1 st solid film 210 to reach the interface between the upper surface (the pattern surface 165) of the substrate W and the 1 st solid film 210. Thereby, as in embodiment 1, the 1 st solid film 210 is split into film pieces, and is peeled off from the substrate W while holding the object to be removed 150 (peeling step) (see fig. 8B). Then, the 1 st solid film 210 is removed from the substrate W by being washed with the peeling liquid, and the object 150 to be removed is removed from the upper surface of the substrate W together with the 1 st solid film 210 (the 1 st removal step, the 1 st solid film peeling and removing step).
After the 1 st solid film 210 is removed from the upper surface of the substrate W, as shown in fig. 12E, a 2 nd compatible liquid supplying step is performed (step S8). The 2 nd compatible liquid supplying step (step S8) is substantially the same as that of embodiment 1, and therefore, a detailed description thereof is omitted. In the second compatible liquid supply step 2, the compatible liquid is supplied to the upper surface of the substrate W, whereby the stripping liquid on the substrate W is replaced with the compatible liquid.
After the 2 nd compatible liquid supplying step is performed for a predetermined period of time, the 2 nd liquid film forming step is performed (step S9). In the 2 nd liquid film forming step, the mixed treatment liquid is supplied to the upper surface of the substrate W, whereby a liquid film of the mixed treatment liquid (the 2 nd mixed treatment liquid film 201) is formed on the upper surface of the substrate W.
Specifically, the compatible liquid valve 56 is closed when a predetermined time has elapsed from the start of the discharge of the compatible liquid. Thereby, the supply of the compatible liquid to the substrate W is stopped. Then, in a state where the opposing member 6 is located at the treatment position, the treatment liquid valve 55 is opened. As a result, as shown in fig. 12F, the mixed processing liquid is supplied (discharged) from the center nozzle 12 toward the upper surface of the rotating substrate W (the 2 nd mixed processing liquid supply step, the 2 nd mixed processing liquid discharge step). In the 2 nd mixed treatment liquid supply step, the spin base 21 is rotated at a predetermined 2 nd mixed treatment liquid speed. The speed of the No. 2 mixed treatment solution is, for example, 300 rpm.
Before the mixed treatment liquid starts to be discharged, the shield elevating unit 74 may vertically move at least one shield 71 in order to switch the shield 71 that receives the liquid discharged from the substrate W.
The mixed processing liquid discharged from the center nozzle 12 flows outward along the upper surface of the rotating substrate W by centrifugal force after contacting the upper surface of the substrate W. Therefore, the compatible liquid on the substrate W is replaced with the mixed treatment liquid, and the 2 nd mixed treatment liquid film 201 covering the entire upper surface of the substrate W is formed (the 2 nd liquid film forming step).
The mixed treatment liquid supplied to the upper surface of the substrate W in the 2 nd liquid film forming step is discharged from the same discharge nozzle (central nozzle 12) as that in the 1 st liquid film forming step. The mixed processing liquid stored in the single processing liquid tank 90 is supplied to the 2 nd pipe 32 of the center nozzle 12. That is, in the 1 st liquid film forming step and the 2 nd liquid film forming step, the mixed treatment liquid is supplied from the common treatment liquid tank 90 to the center nozzle 12, and the mixed treatment liquid is discharged from the center nozzle 12 toward the upper surface of the substrate W.
When a predetermined time has elapsed from the start of the discharge of the mixed treatment liquid, the treatment liquid valve 55 is closed. Thereby, the supply of the mixed processing liquid to the substrate W is stopped. After the supply of the mixed treatment liquid is stopped, the opposing member elevating unit 61 moves the opposing member 6 to a position below the treatment position (for example, the following position). After the discharge of the mixed treatment liquid is stopped, the rotation speed of the spin base 21 is set to a predetermined 2 nd thinning speed. The 2 nd thinning speed is, for example, 300rpm, and is the same as the speed of the 2 nd mixed treatment liquid. Therefore, the substrate W is rotated at the same speed as that during the ejection of the mixed treatment liquid even after the ejection of the mixed treatment liquid is stopped.
While the substrate W is continuously rotated, the discharge of the mixed treatment liquid is stopped. Therefore, although the mixed processing liquid is not newly supplied to the upper surface of the substrate W, the mixed processing liquid is scattered to the outside of the substrate W by the centrifugal force. This reduces the amount of the mixed processing liquid on the upper surface of the substrate W. Therefore, as shown in fig. 12G, the thickness of the 2 nd mixed treatment liquid film 201 becomes thin (2 nd thinning step).
After the film of the 2 nd mixed treatment liquid film 201 on the upper surface of the substrate W is thinned, the 2 nd solid film forming step is performed (step S10). In the 2 nd solid film forming step, the 2 nd mixed liquid film 201 is heated to evaporate the solvent in the 2 nd mixed liquid film 201, thereby forming the 2 nd solid film 211.
Specifically, simultaneously with the stop of the supply of the mixed treatment liquid or after a predetermined time has elapsed from the stop of the supply of the mixed treatment liquid, the heat medium valve 81 is opened while the facing member 6 is maintained at the lower position. Thereby, as shown in fig. 12H, the heat medium is supplied (discharged) from the lower surface nozzle 13 toward the lower surface of the rotating substrate W (the 2 nd heat medium supply step, the 2 nd heat medium discharge step).
The heat medium discharged from the lower surface nozzle 13 flows outward along the lower surface of the rotating substrate W by centrifugal force after contacting the lower surface of the substrate W, and spreads over the entire lower surface of the substrate W. The substrate W is heated by the heat medium diffused over the entire lower surface of the substrate W (substrate heating step). The 2 nd mixed treatment liquid film 201 on the upper surface of the substrate W is heated by the heat medium diffused over the entire lower surface of the substrate W through the substrate W (the 2 nd heating step). The evaporation of the solvent in the 2 nd mixed treatment liquid film 201 is promoted by heating the 2 nd mixed treatment liquid film 201 through the substrate W.
The rotation speed of the rotary base 21 is set to a predetermined 2 nd heating speed. The 2 nd heating rate is, for example, 300 rpm. The evaporation of the solvent in the 2 nd mixed treatment liquid film 201 is promoted by the rotation on the substrate W.
While the 2 nd mixed treatment liquid film 201 on the substrate W is heated by the heat medium, a gas such as an inert gas may be blown onto the 2 nd mixed treatment liquid film 201. Specifically, the 2 nd gas valve 58 is opened. Thereby, as shown in fig. 12H, the gas is ejected from the 5 th pipe 35. The gas discharged from the 5 th pipe 35 is sent into the space S between the counter member 6 and the substrate W, and blown onto the upper surface of the 2 nd mixed treatment liquid film 201 (see fig. 12G) (the 2 nd gas blowing step). By the blowing of the gas, the evaporation of the solvent in the 2 nd mixed treatment liquid film 201 is promoted.
In forming the 2 nd solid film 211, the chamber 4 may be depressurized by adjusting the exhaust valve 27 to increase the exhaust flow rate (depressurizing step). The evaporation of the solvent in the 2 nd mixed treatment liquid film 201 is promoted by the decompression in the chamber 4, that is, the decompression of the atmosphere gas around the 2 nd solid film 211.
The solvent in the 2 nd mixed liquid film 201 is evaporated by heating with a heat medium, blowing of gas, pressure reduction in the chamber 4, and rotation of the substrate W, and a solid substance is deposited on the upper surface of the substrate W. The deposition of the solid substance forms a 2 nd solid film 211 on the upper surface of the substrate W (2 nd deposition step, 2 nd solid film forming step). The 2 nd solid film 211 contains a solid substance precipitated by evaporation of the solvent in a solid state, as in the 1 st solid film 210 (see fig. 12C).
As with the 2 nd solid film 111 of embodiment 1, the thickness T2 of the 2 nd solid film 211 of embodiment 2 is preferably set to be thicker than the pattern height T1 and as thin as possible (see fig. 9A).
After the 2 nd solid film 211 is formed on the upper surface of the substrate W, the 2 nd solid film vaporization and removal process is performed (step S11). In the 2 nd solid film vaporization removal step, the 2 nd solid film 211 is sublimated without passing through a liquid state, thereby removing the 2 nd solid film 211 from the upper surface of the substrate W.
Specifically, the 1 st gas valve 57 is opened while the 2 nd gas valve 58 is kept open. Thereby, as shown in fig. 12I, a gas such as an inert gas is supplied from the center nozzle 12 into the space S between the opposing surface 6a of the opposing member 6 and the upper surface of the substrate W. When the 1 st gas valve 57 is opened, the opposing member 6 is maintained at a position (for example, the following position) below the processing position.
By supplying an inert gas to the space S while maintaining the 2 nd solid film 211, the solid substance in a gaseous state is pushed out from the space S, and the partial pressure of the solid substance in the space S is reduced. Thereby, the solid substance sublimates so that the partial pressure of the solid substance in the space S approaches the vapor pressure (sublimation step, vaporization step). Further, since the opposing member 6 is close to the upper surface of the substrate W, the ambient gas in the space S is easily replaced with the inert gas. Therefore, the partial pressure of the solid-forming substance in the space S can be efficiently reduced.
When the 1 st gas valve 57 is opened, the heat medium valve 81 is maintained in an opened state. That is, the substrate heating step is continued also in the 2 nd solid film vaporization removal step. Therefore, the sublimation of the 2 nd solid film 211 is promoted by heating the 2 nd solid film 211 with the heat medium (sublimation step, vaporization step).
The rotation speed of the rotating base 21 is set to a predetermined sublimation speed. The sublimation rate is, for example, 300 rpm. The sublimation of the 2 nd solid film 211 is promoted by the rotation on the substrate W (sublimation step, vaporization step).
Finally, as in embodiment 1, the solid substance in a solid state located in the concave portions 162 of the uneven pattern 160 is completely sublimated, and the 2 nd solid film 211 is removed (the 2 nd removing step and the 2 nd solid film vaporization removing step) (see fig. 9B). In embodiment 2, the lower surface nozzle 13, the 4 th pipe body 34 (the center nozzle 12), the 5 th pipe body 35, and the rotation motor 23 function as a vaporization unit (sublimation unit).
Further, the chamber 4 may be maintained in a reduced pressure state (pressure reducing step) subsequent to the 2 nd solid film forming step. Thereby, sublimation of the 2 nd solid film 211 is promoted. That is, FFU29 and exhaust unit 8 function as a vaporizing unit. In the 2 nd solid film vaporization and removal step, the degree of pressure reduction is preferably higher than that in the 2 nd solid film formation step.
The thicker the 2 nd mixed treatment liquid film 201 is, the larger the internal stress (strain) remaining in the 2 nd solid film 211 is. By making the 2 nd mixed treatment liquid film 201 thin, the internal stress remaining in the 2 nd solid film 211 can be reduced.
The thinner the 2 nd solid film 211 is, the less residue remains on the upper surface of the substrate W after the 2 nd solid film evaporation and removal process. By making the 2 nd mixed treatment liquid film 201 thin, the 2 nd solid film 211 can be made thin. This can suppress the generation of residue after the 2 nd solid film vaporization removal step.
After the 2 nd solid film 211 is removed from the upper surface of the substrate W, the heat medium valve 81 is closed. Thereafter, the drying process (step S12) and the substrate carrying-out (step S13) are performed.
According to embodiment 2, the same effects as those of embodiment 1 are obtained.
Specifically, according to embodiment 2, the solvent in the 1 st mixed treatment liquid film 200 evaporates on the upper surface of the substrate W, and a solid substance is deposited. In other words, the 1 st solid film 210 is formed by evaporation of the solvent in the 1 st mixed treatment liquid film 200. Then, the 1 st solid film 210 is peeled and removed from the upper surface of the substrate W by the peeling liquid supplied to the upper surface of the substrate W. That is, the 1 st solid film 210 can be removed from the upper surface of the substrate W while maintaining the 1 st solid film 210 in a solid state without dissolving the 1 st solid film 210 on the substrate W. Therefore, the removal object 150 can be prevented or inhibited from falling off from the 1 st solid film 210, and reattachment of the removal object 150 to the upper surface of the substrate W can be prevented or inhibited. Therefore, the upper surface of the substrate W can be cleaned satisfactorily.
After the 1 st solid film 210 is removed from the upper surface of the substrate W, the mixed treatment liquid is supplied again to the upper surface of the substrate W, thereby forming a 2 nd mixed treatment liquid film 201. Then, the solvent is evaporated from the 2 nd mixed treatment liquid film 201 to precipitate a solid-forming substance, thereby forming a 2 nd solid film 211. The 2 nd solid film 211 is sublimated without passing through a liquid state and removed from the upper surface of the substrate W. Therefore, the surface tension acting on the upper surface of the substrate W can be reduced. Therefore, the upper surface of the substrate W can be dried while suppressing or preventing collapse of the uneven pattern 160 formed on the upper surface of the substrate W.
As described above, the upper surface of the substrate W can be cleaned satisfactorily and dried satisfactorily.
In addition, according to embodiment 2, the 1 st solid film 210 removed by peeling and the 2 nd solid film 211 removed by vaporization are formed of the same kind of mixed treatment liquid. Therefore, the substrate processing apparatus 1P can be simplified as compared with the substrate processing in which the 1 st solid film 110 and the 2 nd solid film 111 are formed of the processing liquids different in kind from each other (different in chemical formula of the solid forming substance). This can suppress the cost of the apparatus and the occupied area of the apparatus.
Specifically, in the substrate processing apparatus 1P according to embodiment 2, the mixed processing liquid supplied from the common processing liquid tank 90 to the central nozzle 12 is discharged toward the upper surface of the substrate W in both the 1 st liquid film forming step and the 2 nd liquid film forming step. Therefore, the number of processing liquid tanks can be reduced compared to a method in which the processing liquid discharged from the center nozzle 12 in the 1 st liquid film forming step and the processing liquid discharged from the center nozzle 12 in the 2 nd liquid film forming step are supplied from different processing liquid tanks to the center nozzle 12. Therefore, the substrate processing apparatus 1P can be simplified.
The term "mixed treatment liquids of the same kind" means that the chemical formulas of the solid-forming substances in the mixed treatment liquids are the same, and the term "mixed treatment liquids of different kinds" means that the chemical formulas of the solid-forming substances in the mixed treatment liquids are different. Therefore, for the mixed treatment liquid for forming the 1 st solid film 210 and the mixed treatment liquid for forming the 2 nd solid film 211, even if the concentrations of the solid forming substances and/or the temperatures of the mixed treatment liquids are different from each other, the two mixed treatment liquids are the same kind of mixed treatment liquid as long as the chemical formulae of the solid forming substances of the two mixed treatment liquids are the same.
Further, since the 1 st solid film 210 that is peeled off and the 2 nd solid film 211 that is vaporized and removed are formed of the same mixed processing liquid, even in the case where the residue of the 1 st solid film 210 is adhered to the upper surface of the substrate W after the 1 st solid film 210 is peeled off and removed with the peeling liquid, the residue of the 1 st solid film 210 can be removed together with the 2 nd solid film 211 at the time of vaporizing and removing the 2 nd solid film 211. Therefore, since the residue of the 1 st solid film 210 can be reliably removed from the upper surface of the substrate W, the upper surface of the substrate W can be cleaned satisfactorily and dried satisfactorily.
In addition, according to embodiment 2, the object 150 to be removed existing on the upper surface of the substrate W is held by the 1 st solid film 210 when the 1 st solid film 210 is formed, and is separated from the upper surface of the substrate W when the 1 st solid film 210 is peeled off from the upper surface of the substrate W. Thereafter, the 1 st solid film 210 with the removal object 150 held thereon is removed from the upper surface of the substrate W by the stripping liquid. Therefore, the removal object 150 separated from the upper surface of the substrate W can be prevented or inhibited from adhering to the upper surface of the substrate W again.
In addition, according to embodiment 2, in the 1 st solid film forming step and the 2 nd solid film forming step, the mixed treatment liquid is heated to evaporate the solvent, thereby precipitating the solid-forming substance, thereby forming the 1 st solid film 210 and the 2 nd solid film 211, respectively. That is, the 1 st solid film 210 and the 2 nd solid film 211 can be formed by a common method of heating (evaporation of the solvent) of the mixed treatment liquid. Therefore, the substrate processing apparatus 1P can be simplified as in embodiment 1.
In addition, according to embodiment 2, the solid forming substance is a sublimable substance that sublimes from a solid to a gas. The substrate heating step performed in the 2 nd deposition step is also continued in the 2 nd solid film vaporization and removal step. Therefore, the heat stored in the substrate W to heat the substrate W for evaporating the solvent can be used for heating the 2 nd solid film 211. Therefore, in the 2 nd solid film vaporization removal step, the solid substance in the 2 nd solid film 211 can be sublimated rapidly. That is, the upper surface of the substrate W can be dried quickly. Therefore, the surface tension acting on the upper surface of the substrate W when the mixed treatment liquid is removed from the substrate W can be further reduced.
Further, according to embodiment 2, similarly to embodiment 1, after the rinse liquid supply step is completed and before the first liquid film forming step is started, a compatible liquid compatible with both the rinse liquid and the mixed treatment liquid is supplied onto the upper surface of the substrate W (first compatible liquid supply step 1). Therefore, the degree of freedom in selecting the rinse liquid and the mixed treatment liquid is improved.
Further, according to embodiment 2, similarly to embodiment 1, after the completion of the stripping liquid supply step and before the start of the 2 nd liquid film forming step, a compatible liquid compatible with both the stripping liquid and the mixed treatment liquid is supplied to the upper surface of the substrate W (the 2 nd compatible liquid supply step). Therefore, the freedom of selection of the stripping solution and the mixed treatment solution is improved.
As described above, in embodiment 2, the lower surface nozzle 13 is an example of a solid forming unit. However, the solid forming unit is not limited to the lower surface nozzle 13. As shown in fig. 13, the heating plate 130 facing the lower surface of the substrate W from below can also be used as a solid forming unit (heating unit).
The heating plate 130 is provided instead of the lower surface nozzle 13. The heating plate 130 is disposed between the upper surface of the spin base 21 and the lower surface of the substrate W held by the chuck pins 20. The upper surface 130a of the heating plate 130 faces the entire area of the lower surface of the substrate W.
The heating plate 130 includes a plate body 131 and a heater 132. The plate main body 131 is slightly smaller than the substrate W in a plan view. The heater 132 may be a resistor built in the board body 131. The heating plate 130 is heated by energizing the heater 132. Then, electric power is supplied from the heater energization unit 133 to the heater 132 via the power supply line 134.
A hollow lift shaft 135 extending in the vertical direction along the rotation axis a1 is coupled to the lower surface of the plate main body 131. The elevating shaft 135 is inserted into a through hole 21a formed in the center of the rotating base 21 and the hollow rotating shaft 22.
A heater elevating unit 136 for elevating the heating plate 130 relative to the rotary base 21 is connected to the elevating shaft 135. The heater elevating unit 136 includes, for example, a ball screw mechanism (not shown) and an electric motor (not shown) for applying a driving force thereto. The heater elevating unit 136 is also referred to as a heater elevator.
The heater plate 130 is disposed at a position contacting with or close to the lower surface of the substrate W by the heater elevating unit 136, so that the mixed processing liquid on the substrate W can be heated via the substrate W.
The heating plate 130 may be configured to lift the substrate W from the chuck pins 20 and support the substrate W on the upper surface 130a while being raised to the upper position. For this reason, the plurality of chuck pins 20 need to be configured to be openable and closable between a closed state in which the substrate W is held in contact with the peripheral edge of the substrate W and an open state in which the substrate W is retracted from the peripheral edge of the substrate W, and in the open state, the chuck pins are separated from the peripheral edge of the substrate W to release the holding, and on the other hand, the chuck pins are configured to be in contact with the lower surface of the peripheral edge portion of the substrate W and support the substrate W from below.
As another modification of the solid forming unit in embodiment 2, as shown in fig. 14, an internal heater 140 incorporated in the counter member 6 may be mentioned. The built-in heater 140 is disposed inside the opposing member 6. The built-in heater 140 is lifted and lowered together with the opposing member 6. The built-in heater 140 faces the substrate W held by the chuck pins 20 from above. The built-in heater 140 is a resistor. The built-in heater 140 is supplied with electric power from the heater energization unit 143 via the power supply line 144.
< embodiment 3 >
Fig. 15 is a schematic view of a substrate processing apparatus 1Q according to embodiment 3 of the present invention. In fig. 15 and fig. 16 and 17 described later, the same reference numerals as in fig. 1 and the like are given to the same components as those shown in fig. 1 to 14, and the description thereof will be omitted.
The substrate processing apparatus 1Q according to embodiment 3 is different from the substrate processing apparatus 1 according to embodiment 1 in that the substrate processing apparatus 1Q includes a wet processing unit 2W and a dry processing unit 2D. The wet processing unit 2W has the same configuration as the processing unit 2 shown in fig. 2 or the processing unit 2P shown in fig. 11. That is, the chamber 4 of the wet processing unit 2W is an example of the 1 st chamber that houses the processing liquid supply unit, the solid forming unit, and the stripping liquid supply unit.
Fig. 15 shows an example in which the dry processing unit 2D includes a processing gas pipe 190 for introducing a processing gas into the chamber 4D (2 nd chamber) and a plasma generating device 191 serving as a plasma unit for converting the processing gas in the chamber 4D into plasma. The plasma generator 191 includes an upper electrode 192 disposed above the substrate W and a lower electrode 193 disposed below the substrate W and on which the substrate W is placed.
The plasma generator 191 converts the processing gas in the chamber 4D into plasma, and can vaporize the 2 nd solid films 111 and 211 on the substrate W without passing through a liquid state by chemical reactions such as decomposition reaction and oxidation reaction by oxygen radicals.
In the substrate processing performed by the substrate processing apparatus 1Q according to embodiment 3, after the substrate W is carried into the chamber 4 (1 st chamber) of the wet processing unit 2W by the transfer robot CR, the chemical liquid processing step (step S2) to the 2 nd solid film forming step (step S10) shown in fig. 6 are performed in the chamber 4. That is, the substrate W is held by the spin chuck 5 in the chamber 4 (the 1 st substrate holding step) from the start of the chemical solution processing step (step S2) to the end of the 2 nd solid film forming step (step S10).
Thereafter, as shown in fig. 15, the substrate W having the 2 nd solid films 111 and 211 formed on the upper surface thereof is carried out of the chamber 4 of the wet processing unit 2W by the transfer robot CR and is carried into the chamber 4D of the dry processing unit 2D (transfer step). The transfer robot CR is an example of a transfer unit.
Then, the 2 nd solid film 111, 211 on the substrate W is changed into a gas without passing through a liquid by a chemical reaction due to plasma in the chamber 4D. Thereby, the 2 nd solid films 111 and 211 are removed from the substrate W (the 2 nd solid film vaporization removal step). In this manner, while the 2 nd solid film vaporization and removal step is being performed, the substrate W is placed (held) on the lower electrode 193 (the 2 nd substrate holding step).
According to embodiment 3, the substrate W is held in the chamber 4 (1 st chamber) of the wet processing unit 2W during a period from the start of the 1 st liquid film forming step to the end of the 2 nd solid film forming step, and is held in the chamber 4D (2 nd chamber) of the dry processing unit 2D during a period from the execution of the 2 nd solid film evaporation and removal step. Therefore, the chamber 4D can be configured to be dedicated to the vaporization of the 2 nd solid films 111 and 2111 (for example, a configuration including the plasma generation device 191 described above). Therefore, the 2 nd solid films 111 and 211 are vaporized, and the upper surface of the substrate W can be dried satisfactorily.
In the configuration in which the substrate processing apparatus 1Q includes the wet processing unit 2W and the dry processing unit 2D, the vaporization unit may be a unit other than the plasma generation apparatus 191. For example, as shown in fig. 16, the dry processing unit 2D may include a pedestal 170 on which the substrate W is placed, and a light irradiation lamp 171 that irradiates the upper surface of the substrate W held by the pedestal 170 with light such as UV. In this case, the 2 nd solid films 111 and 211 on the substrate W are decomposed by the irradiation of light, and are changed into gas without passing through the liquid state.
In the case where the plasma generation device 191 shown in fig. 15 or the light irradiation lamp 171 shown in fig. 16 is used as the vaporization unit, the 2 nd solid films 111 and 211 are vaporized by a chemical reaction. Therefore, the solid substance contained in the treatment liquid may not be a sublimable substance.
As shown in fig. 17, the dry processing unit 2D may include a heating plate 180 for placing and heating the substrate W as a vaporization unit. The heating plate 180 includes a plate main body 181 and a heater 182 built in the plate main body 181. The heating plate 180 is heated by energizing the heater 182. The heater 182 is supplied with electric power from the heater energization unit 183. In the case of using the heating plate 180 as the vaporization unit, a mixed processing liquid in which the 2 nd solid film 211 is formed by heating is used as the processing liquid. The 2 nd solid film 211 on the substrate W is sublimated by being heated by the heating plate 180 through the substrate W, not through a liquid state.
The present invention is not limited to the above-described embodiments, and can be implemented in other embodiments.
For example, in the above embodiment, the chemical liquid is discharged from the 1 st moving nozzle 10, the stripping liquid is discharged from the 2 nd moving nozzle 11, and the treatment liquid (mixed treatment liquid, molten treatment liquid), the rinse liquid, the compatible liquid, and the inert gas are discharged from the center nozzle 12. However, the treatment fluid other than the chemical solution may be discharged from the 1 st moving nozzle 10, or the treatment fluid other than the stripping solution may be discharged from the 2 nd moving nozzle 11. Further, the chemical solution and/or the stripping solution may be discharged from the central nozzle 12.
In the above embodiment, the IPA/DIW mixed liquid is discharged as the stripping liquid from the 2 nd moving nozzle 11. However, it is also possible to mix DIW as the rinse liquid supplied to the central nozzle 12 with IPA as the compatible liquid and to discharge the IPA/DIW mixed liquid as the stripping liquid from the central nozzle 12.
In the above embodiment, a liquid having compatibility with the rinse liquid, the treatment liquid, and the stripping liquid is used as the compatible liquid. However, unlike the above embodiment, a1 st compatible liquid compatible with both the rinse liquid and the treatment liquid and a 2 nd compatible liquid compatible with both the treatment liquid and the stripping liquid may be prepared as different liquids.
The 1 st solid film 210 and the 2 nd solid film 211 according to embodiment 2 may be formed of a solid substance precipitated in the mixed treatment liquid by applying ultrasonic waves.
The 1 st solid film 110 and the 2 nd solid film 111 according to embodiment 1 may be formed by leaving the substrate W in a state where the molten processing liquid is supplied to the upper surface thereof without cooling. Therefore, as the solid forming substance constituting the molten processing liquid, it is necessary to use a substance having a melting point (solidification point) higher than the normal temperature. Specifically, when the molten processing liquid prepared by previously heating a solid substance having a melting point (solidification point) higher than the normal temperature is discharged from the nozzle, the molten processing liquid adhering to the upper surface of the substrate W is naturally cooled and solidified on the upper surface of the substrate W. Thereby, the 1 st solid film 110 or the 2 nd solid film 111 is formed.
The 1 st solid film 210 and the 2 nd solid film 211 according to embodiment 2 may be formed by placing the substrate W without blowing or heating a gas, rotating the substrate W, or the like. Therefore, it is preferable to select a solvent having high volatility as the solvent for the mixed treatment liquid.
In embodiment 2, the temperature of the gas supplied from the central nozzle 12 (the 4 th pipe 34) and the 5 th pipe 35 to the space S may be set to be higher than the normal temperature. In this case, in the 1 st solid film forming step and the 2 nd solid film forming step, evaporation of the solvent can be promoted to promote formation of the 1 st solid film 210 and formation of the 2 nd solid film 211, respectively. In addition, when the gas supplied from the central nozzle 12 (the 4 th pipe body 34) and the 5 th pipe body 35 to the space S is set to a temperature higher than the normal temperature, sublimation of the 2 nd solid film 211 can be promoted in the 2 nd solid film vaporization and removal step.
In the 2 nd solid film vaporization and removal step, the 2 nd solid films 111 and 211 may be oxidized and vaporized by using an active gas such as ozone gas as a gas to be supplied to the 2 nd solid films 111 and 211.
Alternatively, the 1 st solid film 210 may be formed by blowing only gas without using a heat medium.
The formation and vaporization of the 1 st solid films 110 and 210 and the 2 nd solid films 111 and 211 can be performed by combining the above-described methods.
For example, the formation of the 1 st solid film 110 as a solidified material of the molten processing liquid may be performed by at least one of natural cooling, cooling by the cooling plate 120 (see fig. 10) or the counter member 6, and cooling by supply of a refrigerant (see fig. 2).
The second solid film 111, which is a solidified product of the molten processing liquid, can be vaporized by at least one of blowing of a gas, reducing the pressure of an ambient gas, and rotating the substrate W.
The formation of the 2 nd solid film 211 as the precipitate precipitated from the mixed processing liquid can be performed by at least one of heating by the heater (heater 132, built-in heater 140), heating by the supply of the heat medium, blowing of the gas, application of the ultrasonic wave, reduction of the pressure of the ambient gas, and rotation of the substrate W.
The evaporation of the 2 nd solid film 211 as a precipitate precipitated from the mixed processing liquid can be performed by at least one of heating by the heater (heater 132, built-in heater 140, heater 182), heating by the supply of a heat medium, blowing of a gas, UV irradiation, plasma irradiation, application of ultrasonic waves, depressurization of an ambient gas, and rotation of the substrate W.
In addition, the temperature of the melt-processed liquid for forming the 1 st solid film 110 and the melt-processed liquid for forming the 2 nd solid film 111 may be different from each other. Similarly, the concentration of the solid substance in the mixed treatment liquid and/or the temperature of the mixed treatment liquid may be different between the mixed treatment liquid for forming the 1 st solid film 210 and the mixed treatment liquid for forming the 2 nd solid film 211.
In the substrate processing of the above embodiment, the chemical liquid processing step (step S2), the rinsing step (step S3), and the 1 st compatible liquid supplying step (step S4) are performed before the 1 st liquid film forming step (step S5). However, the substrate processing apparatus 1 may be carried in again after the chemical liquid processing step (step S2) to the 1 st compatible liquid supplying step (step S4) are performed by another apparatus before the substrate processing apparatuses 1, 1P, 1Q are carried in. That is, in the substrate processing apparatuses 1, 1P, and 1Q, the 1 st liquid film forming step (step S5) may be performed without performing the chemical liquid processing step (step S2) to the 1 st compatible liquid supplying step (step S4) after the substrate is carried in (step S1).
In addition, when the rinse liquid and the molten processing liquid can be mixed, the 1 st compatible liquid supply step (step S4) can be omitted, unlike the substrate processing of embodiment 1. Similarly, when the molten processing liquid and the stripping liquid can be mixed, the 2 nd compatible liquid supply step (step S8) can be omitted, unlike the substrate processing of embodiment 1.
In addition, when the rinse liquid and the mixed treatment liquid can be mixed, the 1 st compatible liquid supply step (step S4) can be omitted, unlike the substrate treatment of embodiment 2. Similarly, when the mixed processing liquid and the stripping liquid can be mixed, the 2 nd compatible liquid supply step (step S8) can be omitted, unlike the substrate processing of embodiment 2.
The embodiments of the present invention have been described in detail, but these are merely specific examples for illustrating the technical contents of the present invention, and the present invention should not be construed as being limited to these specific examples, and the scope of the present invention is defined only by the appended claims.
The present application corresponds to Japanese patent application No. 2018-.
Description of the reference numerals
1: substrate processing apparatus
1P: substrate processing apparatus
1Q: substrate processing apparatus
4: chamber (1 st chamber)
4D: chamber (2 nd chamber)
8: exhaust unit (solid forming unit, gasification unit)
11: no. 2 moving nozzle (stripping liquid supply unit)
12: central nozzle (jet nozzle)
13: lower surface nozzle (solid forming unit, gasification unit)
23: rotary motor (solid forming unit, gasification unit)
29: FFU (solid forming unit, gasification unit)
32: 2 nd pipe (treatment liquid supply unit)
34: pipe 4 (solid forming unit, gasification unit)
35: pipe 5 (solid forming unit, gasification unit)
90: treatment liquid tank
100: film of No. 1 melt treatment (No. 1 liquid film)
101: film of No. 2 melt treatment (No. 2 liquid film)
110: first solid film
111: 2 nd solid film
120: cooling plate (solid forming unit)
130: heating plate (solid forming unit, gasification unit)
140: built-in heater (solid forming unit, gasification unit)
150: removing object
171: light irradiation lamp (gasification unit)
180: heating plate (gasification unit)
191: plasma generating device (gasification unit)
200: film of the No. 1 Mixed treatment liquid (No. 1 liquid film)
201: film of No. 2 Mixed treatment (No. 2 liquid film)
210: first solid film
211: 2 nd solid film
CR: carrying robot (carrying unit)
W: a substrate.

Claims (14)

1. A substrate processing method includes the steps of:
a1 st liquid film forming step of forming a1 st liquid film of a treatment liquid containing a solid-forming substance on a surface of a substrate by supplying the treatment liquid to the surface of the substrate;
a1 st solid film forming step of forming a1 st solid film containing the solid substance from the 1 st liquid film;
a1 st solid film peeling and removing step of peeling and removing the 1 st solid film from the surface of the substrate by supplying a peeling liquid for peeling the 1 st solid film to the surface of the substrate;
a 2 nd liquid film forming step of forming a 2 nd liquid film of the treatment liquid on the surface of the substrate by supplying the treatment liquid to the surface of the substrate after removing the 1 st solid film from the surface of the substrate;
a 2 nd solid film forming step of forming a 2 nd solid film containing the solid substance from the 2 nd liquid film; and
and a 2 nd solid film vaporization removal step of vaporizing the 2 nd solid film without passing through a liquid state, and removing the 2 nd solid film from the surface of the substrate.
2. The substrate processing method according to claim 1, wherein,
the 1 st solid film forming step includes a step of forming the 1 st solid film for holding an object to be removed existing on the surface of the substrate,
the 1 st solid film peeling step includes a step of peeling the 1 st solid film from the surface of the substrate while holding the object to be removed.
3. The substrate processing method according to claim 1 or 2, wherein,
the treatment liquid is a melt of the solid forming substance,
the substrate processing method further includes:
a1 st cooling step of cooling the 1 st liquid film in the 1 st solid film forming step to solidify the 1 st liquid film; and
a 2 nd cooling step of cooling the 2 nd liquid film in the 2 nd solid film forming step to solidify the 2 nd liquid film.
4. The substrate processing method according to claim 3, wherein,
the 1 st cooling step is also continued in the 1 st solid film peeling and removing step.
5. The substrate processing method according to claim 3 or 4,
the 2 nd cooling step is also continued in the 2 nd solid film vaporization and removal step.
6. The substrate processing method according to claim 1 or 2, wherein,
the treatment liquid contains the solid-forming substance as a solute and a solvent that dissolves the solid-forming substance,
the substrate processing method further includes:
a1 st deposition step of evaporating the solvent from the 1 st liquid film to deposit the solid substance in the 1 st solid film formation step; and
a 2 nd deposition step of evaporating the solvent from the 2 nd liquid film to deposit the solid substance in the 2 nd solid film formation step.
7. The substrate processing method according to claim 6, wherein,
the solid forming substance is a sublimable substance that sublimes from a solid to a gas,
the substrate processing method further includes a substrate heating step of heating the substrate in the 2 nd deposition step to promote evaporation of the solvent from the 2 nd liquid film,
the substrate heating step is also continued in the 2 nd solid film vaporization and removal step.
8. The substrate processing method according to any one of claims 1 to 7,
in the 1 st and 2 nd liquid film forming steps, the processing liquid is supplied from a common processing liquid tank to a discharge nozzle, and the processing liquid is discharged from the discharge nozzle toward the surface of the substrate.
9. The substrate processing method according to any one of claims 1 to 8, further comprising:
a chemical liquid supplying step of supplying a chemical liquid to the surface of the substrate before the 1 st liquid film forming step;
a rinse liquid supply step of supplying a rinse liquid for rinsing the chemical liquid adhering to the front surface of the substrate after the chemical liquid supply step is completed and before the 1 st liquid film forming step is started; and
and a1 st compatible liquid supply step of supplying a1 st compatible liquid, which is compatible with both the rinse liquid and the treatment liquid, to the front surface of the substrate after the rinse liquid supply step is completed and before the 1 st liquid film forming step is started.
10. The substrate processing method according to any one of claims 1 to 9,
and a 2 nd compatible liquid supply step of supplying a 2 nd compatible liquid compatible with both the stripping liquid and the treatment liquid to the surface of the substrate after the 1 st solid film stripping and removing step is completed and before the 2 nd liquid film forming step is started.
11. The substrate processing method of any of claims 1 to 10, further comprising:
a1 st substrate holding step of holding the substrate in a1 st chamber from a start of the 1 st liquid film forming step to an end of the 2 nd solid film forming step;
a transfer step of transferring the substrate in a state where the 2 nd solid film is formed from the 1 st chamber to a 2 nd chamber; and
and a 2 nd substrate holding step of holding the substrate in the 2 nd chamber while the 2 nd solid film vaporization removal step is performed.
12. A substrate processing apparatus, comprising:
a treatment liquid supply unit that supplies a treatment liquid containing a solid-forming substance to a surface of a substrate;
a solid forming unit that forms the solid forming substance in a solid state from the treatment liquid on the surface of the substrate;
a stripping liquid supply unit that supplies a stripping liquid for stripping the solid-state substance from the surface of the substrate to the surface of the substrate;
a vaporizing unit that vaporizes the solid forming substance in a solid state on the surface of the substrate without passing through a liquid state; and
a controller that controls the treatment liquid supply unit, the solid forming unit, the stripping liquid supply unit, and the vaporizing unit,
the controller executes the following processes: a1 st liquid film forming step of supplying the treatment liquid from the treatment liquid supply unit to the surface of the substrate to form a1 st liquid film of the treatment liquid on the surface of the substrate; a1 st solid film forming step of forming a1 st solid film containing the solid substance in a solid state from the 1 st liquid film by the solid forming means; a1 st solid film peeling and removing step of peeling and removing the 1 st solid film from the surface of the substrate by supplying the peeling liquid from the peeling liquid supply unit to the upper surface of the substrate; a 2 nd liquid film forming step of forming a 2 nd liquid film of the treatment liquid on the surface of the substrate by supplying the treatment liquid from the treatment liquid supply unit to the surface of the substrate after removing the 1 st solid film from the surface of the substrate; a 2 nd solid film forming step of forming a 2 nd solid film containing the solid substance from the 2 nd liquid film by the solid forming means; and a 2 nd solid film vaporization removal step of vaporizing the 2 nd solid film by the vaporization unit to remove the 2 nd solid film from the surface of the substrate.
13. The substrate processing apparatus of claim 12, wherein,
also comprises a treatment liquid tank for storing the treatment liquid,
the processing liquid supply unit includes a discharge nozzle that discharges the processing liquid toward the surface of the substrate,
the controller causes the treatment liquid supplied from the treatment liquid tank to the discharge nozzle to be discharged from the discharge nozzle toward the surface of the substrate in the 1 st liquid film forming step and the 2 nd liquid film forming step.
14. The substrate processing apparatus according to claim 12 or 13, further comprising:
a1 st chamber that accommodates the processing liquid supply unit, the solid forming unit, and the peeling liquid supply unit;
a 2 nd chamber for accommodating the vaporizing unit; and
a transfer unit for transferring the substrate from the 1 st chamber to the 2 nd chamber,
the controller executes the following processes: a1 st substrate holding step of holding the substrate in the 1 st chamber from a start of the 1 st liquid film forming step to an end of the 2 nd solid film forming step; a transfer step of transferring the substrate in a state where the 2 nd solid film is formed from the 1 st chamber to the 2 nd chamber by the transfer unit; and a 2 nd substrate holding step of holding the substrate in the 2 nd chamber while the 2 nd solid film vaporization removal step is performed.
CN201980076850.0A 2018-11-22 2019-10-28 Substrate processing method and substrate processing apparatus Pending CN113169061A (en)

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PCT/JP2019/042188 WO2020105376A1 (en) 2018-11-22 2019-10-28 Substrate processing method and substrate processing device

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