CN112640057B - Substrate processing method and substrate processing apparatus - Google Patents
Substrate processing method and substrate processing apparatus Download PDFInfo
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- CN112640057B CN112640057B CN201980056867.XA CN201980056867A CN112640057B CN 112640057 B CN112640057 B CN 112640057B CN 201980056867 A CN201980056867 A CN 201980056867A CN 112640057 B CN112640057 B CN 112640057B
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
The present invention relates to a substrate processing method and a substrate processing apparatus for performing sublimation drying, wherein a solvent is evaporated from a liquid film of a pre-drying processing liquid containing a sublimate covering a substrate surface to form a solidified body containing the sublimate on the substrate surface, and the solidified body is sublimated, whereby, in a pre-drying processing liquid film removal step for removing the liquid film from the substrate surface, a region-concomitant state is generated in which a dried region where the substrate surface is dried by sublimation of the solidified body, a solidified body-remaining region where the solidified body remains, and a liquid-remaining region where the liquid film remains are sequentially arranged from a central portion of the substrate surface toward a peripheral portion of the substrate surface, and the dried region is enlarged so that the solidified body-remaining region moves toward the peripheral portion of the substrate surface while maintaining the region-concomitant state. This reduces the influence of stress caused by the sublimating substance in the solid state, and thus reduces pattern collapse on the substrate.
Description
Technical Field
The present invention relates to a substrate processing method and a substrate processing apparatus for processing a substrate. The substrate to be processed includes, for example, substrates such as semiconductor wafers, substrates for liquid crystal display devices, substrates for FPDs (Flat Panel Display) for organic EL (Electroluminescence) display devices, substrates for optical discs, substrates for magnetic discs, substrates for magneto-optical discs, substrates for photomasks, ceramic substrates, and substrates for solar cells.
Background
In a manufacturing process of a semiconductor device, a liquid crystal display device, or the like, a substrate is processed as needed. Such treatment includes supplying a chemical solution, a rinse solution, or the like to the substrate. After the rinse liquid is supplied, the rinse liquid is removed from the substrate, and the substrate is dried. In a monolithic substrate processing apparatus for processing substrates one by one, spin drying is performed to remove liquid adhering to the substrate by rotating the substrate at a high speed, thereby drying the substrate.
When a pattern is formed on the surface of a substrate, there are cases in which: when the substrate is dried, surface tension of the rinse liquid attached to the substrate acts on the pattern, resulting in pattern collapse. As a countermeasure against the above problems, the following method is adopted: a liquid having a low surface tension such as IPA (isopropyl alcohol) is supplied to the substrate, or a hydrophobizing agent is supplied to the substrate to hydrophobize the surface of the substrate to reduce the surface tension of the liquid on the pattern. However, even if the surface tension acting on the pattern is reduced by using IPA or a hydrophobizing agent, there is a concern that pattern collapse cannot be sufficiently prevented depending on the strength of the pattern.
In recent years, sublimation drying has been attracting attention as a technique for preventing pattern collapse and drying a substrate. Patent document 1 discloses an example of a substrate processing method and a substrate processing apparatus for performing sublimation drying. The sublimation drying described in patent document 1 is to supply a solution of a sublimating substance to a surface of a substrate and replace DIW (deionized water) on the substrate with the solution of the sublimating substance. Then, the solvent in the solution of the sublimating substance is evaporated to precipitate the sublimating substance, thereby forming a film containing the sublimating substance in a solid state. Then, the sublimation material is sublimated by heating the substrate, and the film containing the sublimation material in a solid state is removed from the substrate.
Background art literature
Patent literature
Patent document 1: japanese patent application laid-open No. 2012-243869
Disclosure of Invention
[ problem to be solved by the invention ]
If the sublimation material is maintained in a solid state for a long period of time, the stress caused by the sublimation material in a solid state acts on the pattern for a long period of time, and the pattern is liable to collapse.
The sublimation drying disclosed in patent document 1 is to precipitate a sublimation material in a solid state on the entire surface of a substrate, and then sublimate the sublimation material in a solid state. The timing of the deposition of the sublimating substance and the start of sublimation is different over the entire surface of the substrate, and is different depending on each position on the surface of the substrate. Therefore, the longer the time at which the precipitation of the sublimation material starts, the longer the time at which the sublimation material starts, and the later the time at which the sublimation material starts, with respect to the time at which the sublimation material is maintained in a solid state. Therefore, there is a concern that a portion on the surface of the substrate where stress caused by the sublimating substance in a solid state acts on the pattern is long.
Accordingly, an object of the present invention is to provide a substrate processing method and a substrate processing apparatus capable of reducing the influence of stress caused by a solidified material containing a sublimating substance, thereby reducing pattern collapse on a substrate.
[ means of solving the problems ]
An embodiment of the present invention provides a substrate processing method including: a pre-drying treatment liquid film forming step of forming a liquid film of a pre-drying treatment liquid on a surface of a substrate on which a pattern is formed by supplying the pre-drying treatment liquid to the surface of the substrate, the pre-drying treatment liquid being a solution containing a sublimate which changes from a solid to a gas without passing through the liquid and a solvent which dissolves the sublimate; and a pre-drying treatment liquid film removal step of removing the liquid film from the substrate surface by evaporating the solvent from the liquid film to form a solidified material containing the sublimating substance on the substrate surface and sublimating the solidified material; and the pre-drying treatment liquid film removal step comprises: a region-concomitant state generating step of generating a region-concomitant state in which a dried region in which the solidified material sublimates to dry the substrate surface, a solidified material remaining region in which the solidified material remains, and a liquid remaining region in which the liquid film remains are arranged in this order from a central portion of the substrate surface toward a peripheral portion of the substrate surface; and a drying region expanding step of expanding the drying region so that the solidified material remaining region moves toward the peripheral edge portion of the substrate surface while maintaining the region-side state.
According to this method, the drying region is enlarged while maintaining the region-side condition, and thereby the liquid film of the pre-drying treatment liquid is removed from the substrate surface. Thereby, the entire surface of the substrate can be dried.
When the drying area is enlarged, the solidified residual area moves toward the peripheral edge portion of the substrate surface. Therefore, at any portion on the surface of the substrate, the solidified material formed at that portion is sublimated without forming other portions. Therefore, compared with a method in which the solidification body starts to sublimate after the solidification body is formed over the entire surface of the substrate, the time for maintaining the solidification body can be shortened at any position on the surface of the substrate. Therefore, the time for which the stress caused by the solidified body acts on the pattern on the substrate surface can be shortened.
As a result, the influence of stress caused by the solidified body containing the sublimating substance can be reduced, and therefore, pattern collapse on the substrate can be reduced.
In one embodiment of the present invention, the drying area enlarging step includes the steps of: the solidified material remaining region is maintained in a ring shape surrounding the drying region in a plan view, and the drying region is enlarged so that the solidified material remaining region moves toward a peripheral edge portion of the substrate surface. Therefore, the solidified material remaining region moves toward the peripheral edge portion of the surface of the substrate while scanning the entire surface of the substrate. Therefore, the time for which the stress caused by the solidification body acts on the pattern can be shortened in the entire surface of the substrate. Thus, pattern collapse can be reduced over the entire surface of the substrate.
In one embodiment of the present invention, the substrate processing method further includes a gas supply step of supplying gas to the solidification body in the solidification body remaining region and the pre-drying treatment liquid in a portion of the liquid remaining region near the solidification body remaining region during the expanding of the drying region. Therefore, sublimation of the solidified material in the solidified material remaining region can be promoted. Further, evaporation of the solvent from the pre-drying treatment liquid present in the portion of the liquid remaining region near the solidification remaining region can be promoted, and solidification formation can be promoted. This promotes movement of the solidified material remaining region toward the peripheral edge portion of the substrate surface and expansion of the dry region while maintaining the region-side state. Therefore, the time of the pattern in which the stress caused by the solidified body acts on the substrate surface can be further shortened.
In one embodiment of the present invention, the gas supply step includes: a gas discharge step of discharging a gas from a nozzle toward the surface of the substrate; and a nozzle moving step of moving the nozzle toward the peripheral edge of the substrate surface as the drying area is enlarged. Therefore, the nozzle can be maintained at a position closer to the solidified material remaining area than the center portion of the substrate surface during the movement of the solidified material remaining area toward the peripheral portion of the substrate surface by enlarging the drying area. Therefore, the gas can be efficiently supplied to the solidified material remaining region during the expansion of the drying region. Therefore, sublimation of the solidified material in the solidified material remaining region can be further promoted. Further, evaporation of the solvent from the pre-drying treatment liquid present in the portion of the liquid remaining region near the solidification remaining region can be promoted, and solidification formation can be further promoted. This can further promote the expansion of the drying area. Therefore, the time of the pattern in which the stress caused by the solidified body acts on the substrate surface can be further shortened.
In one embodiment of the present invention, the substrate processing method further includes a heating step of heating the solidification body in the solidification body remaining region and the pre-drying treatment liquid in a portion of the liquid remaining region near the solidification body remaining region in the drying region expanding step. Therefore, sublimation of the solidified material in the solidified material remaining region can be promoted. Further, evaporation of the solvent from the pre-drying treatment liquid present in the portion of the liquid remaining region near the solidification remaining region can be promoted, and solidification formation can be promoted. This promotes movement of the solidified material remaining region toward the peripheral edge portion of the substrate surface and expansion of the dry region while maintaining the region-side state. Therefore, the time of the pattern in which the stress caused by the solidified body acts on the substrate surface can be further shortened.
In one embodiment of the present invention, the heating step includes a heater moving step of moving the heater toward the peripheral edge portion of the substrate surface as the drying area is enlarged. Therefore, the heater can be maintained at a position closer to the solidified material remaining region than the central portion of the substrate during the movement of the solidified material remaining region toward the peripheral portion of the substrate surface by the enlargement of the drying region. Therefore, the solidified material can be efficiently heated during the expansion of the drying area. This can further promote sublimation of the solidified material in the solidified material remaining region. Further, evaporation of the solvent from the pre-drying treatment liquid present in the portion of the liquid remaining region near the solidification remaining region can be promoted, and solidification formation can be further promoted. This can further promote the expansion of the drying area. Therefore, the time of the pattern in which the stress caused by the solidified body acts on the substrate surface can be further shortened.
In one embodiment of the present invention, the substrate processing method further includes a substrate rotation step of rotating the substrate around a vertical axis passing through a central portion of the substrate surface in parallel with the pre-drying treatment liquid film forming step and the pre-drying treatment liquid film removing step. The substrate rotation step includes a spin-up step of accelerating the rotation of the substrate at the same time as the start of the region coexistence state generation step.
According to this method, the substrate is rotated in the pre-drying treatment liquid film forming step and the pre-drying treatment liquid film removing step, and the substrate is rotated at an accelerated speed while the pre-drying treatment liquid film removing step is started. That is, the substrate rotates at a relatively low speed in the pre-drying treatment liquid film forming step and rotates at a relatively high speed in the pre-drying treatment liquid film removing step.
Therefore, in the pre-drying treatment liquid film forming step, a sufficiently thick liquid film can be formed on the surface of the substrate, so that the entire surface of the substrate can be reliably covered with the liquid film of the pre-drying treatment liquid. On the other hand, in the pre-drying treatment liquid film removal step, the centrifugal force acting on the liquid film increases, so that the liquid film of the pre-drying treatment liquid becomes thin. Therefore, the amount of solvent evaporated to form a solidified body is reduced, so that a solidified body can be formed quickly in the drying region enlarging step. Further, by thinning the liquid film of the treatment liquid before drying, the solidified material formed from the liquid film is thinned. Therefore, in the drying region expansion step, the solidified material can be sublimated rapidly. Therefore, the drying area can be rapidly enlarged. Therefore, the time of the pattern in which the stress caused by the solidified body acts on the substrate surface can be further shortened.
In one embodiment of the present invention, the region coexistence state generation step includes the steps of: the drying region and the solidified material remaining region are formed in the center of the liquid film by blowing gas toward the center of the substrate surface. The spin-up step includes the steps of: the substrate is rotated with acceleration while starting the blowing of the gas in the region concurrent state generation process.
According to this method, the substrate is accelerated while the blowing of the gas is started in the region coexistence state generation step. Therefore, immediately before the blowing of the gas, the liquid film can be maintained in a sufficiently thick state. Therefore, the entire surface of the substrate can be covered with the liquid film of the pre-drying treatment liquid. On the other hand, when the blowing of the gas is started, the centrifugal force acting on the liquid film increases due to the accelerated rotation of the substrate, so that the liquid film of the treatment liquid before drying becomes thin. Therefore, the amount of solvent evaporated to form a solidified body is reduced, so that a solidified body can be formed quickly. Further, by thinning the liquid film of the treatment liquid before drying, the solidified material formed from the liquid film is thinned. Therefore, in the drying region expansion step, the solidified material can be sublimated rapidly. Therefore, the drying area can be rapidly enlarged. Therefore, the time of the pattern in which the stress caused by the solidified body acts on the substrate surface can be further shortened.
In one embodiment of the present invention, the region coexistence state generation step includes the steps of: the central portion of the liquid film is heated to form the drying region and the solidified material remaining region in the central portion of the liquid film. The spin-up step includes the steps of: in the region concurrent state generating step, the substrate is accelerated and rotated while heating the central portion of the liquid film is started.
According to this method, the substrate is accelerated and rotated while heating the central portion of the liquid film is started in the region-concurrent state generating step. Therefore, immediately before the central portion of the liquid film is heated, the liquid film can be maintained in a sufficiently thick state. Therefore, the entire surface of the substrate can be covered with the liquid film of the pre-drying treatment liquid. On the other hand, when heating of the center portion of the liquid film is started, the centrifugal force acting on the liquid film increases due to the accelerated rotation of the substrate, and therefore the liquid film of the pre-drying treatment liquid becomes thin. Therefore, the amount of solvent evaporated to form a solidified body is reduced, so that a solidified body can be formed quickly. Further, by thinning the liquid film of the treatment liquid before drying, the solidified material formed from the liquid film is thinned. Therefore, in the drying region expansion step, the solidified material can be sublimated rapidly. Therefore, the drying area can be rapidly enlarged. Therefore, the time of the pattern in which the stress caused by the solidified body acts on the substrate surface can be further shortened.
In one embodiment of the present invention, the substrate processing method further comprises: a rinse liquid supply step of supplying a rinse liquid to the surface of the substrate; and a replacement step of supplying a replacement liquid compatible with both the rinse liquid and the pre-drying treatment liquid to the substrate surface, thereby replacing the rinse liquid on the substrate surface with the replacement liquid. The step of forming the liquid film before drying includes the steps of: the rinse liquid is replaced with the replacement liquid, and then the pre-drying treatment liquid is supplied to the substrate surface.
According to this method, the substitution liquid is compatible with both the rinse liquid and the pretreatment liquid before drying. Therefore, even when the rinse liquid and the pre-drying treatment liquid are not mixed, the rinse liquid on the substrate surface is replaced with the replacement liquid, and then the pre-drying treatment liquid is supplied to the substrate surface, whereby a liquid film of the pre-drying treatment liquid can be formed on the substrate surface. Therefore, the degree of freedom in selecting the rinse liquid and the pre-drying treatment liquid increases. Thus, the drying pretreatment liquid containing an appropriate sublimation material can be selected from the viewpoint of the influence of the stress caused by the solidified material on the pattern collapse, irrespective of the type of the rinse liquid. Thus, pattern collapse can be further reduced.
Another embodiment of the present invention provides a substrate processing apparatus including: a pre-drying treatment liquid film forming unit that forms a liquid film of a pre-drying treatment liquid that covers a surface of a substrate by supplying the pre-drying treatment liquid to the surface of the substrate on which a pattern is formed, the pre-drying treatment liquid being a solution containing a sublimating substance that changes from a solid to a gas without passing through the liquid and a solvent that dissolves the sublimating substance; and a pre-drying treatment liquid film removing unit that evaporates the solvent from the liquid film to form a solidified body containing the sublimating substance on the surface of the substrate, and sublimates the solidified body, thereby removing the liquid film from the surface of the substrate; and a region-concomitant state in which the liquid film-removal means for pre-drying treatment generates a region-concomitant state in which the solidified material sublimates to dry the substrate surface, a solidified material remaining region in which the solidified material remains, and a liquid remaining region in which the liquid film remains are sequentially arranged from the central portion of the substrate surface toward the peripheral portion of the substrate surface, and the region-concomitant state is maintained while the dried region is enlarged so that the solidified material remaining region moves toward the peripheral portion of the substrate surface.
According to this apparatus, the drying region is enlarged while maintaining the region-side state, so that the liquid film before drying is removed from the substrate surface. Thereby, the entire surface of the substrate can be dried.
When the drying area is enlarged, the solidified residual area moves toward the peripheral edge portion of the substrate surface. Therefore, at any portion on the surface of the substrate, the solidified material formed at that portion is sublimated without forming other portions. Therefore, compared with a method in which the solidification body starts to sublimate after the solidification body is formed over the entire surface of the substrate, the time for maintaining the solidification body can be shortened at any position on the surface of the substrate. Therefore, the time for which the stress caused by the solidified body acts on the pattern on the substrate surface can be shortened.
As a result, the influence of stress caused by the solidified material containing the sublimating substance can be reduced, and therefore, pattern collapse on the substrate can be reduced.
In another embodiment of the present invention, the pre-drying treatment liquid film removing means includes gas supply means for supplying gas to the solidification body in the solidification body remaining region and the pre-drying treatment liquid in a portion of the liquid remaining region near the solidification body remaining region during the expansion of the drying region. Therefore, sublimation of the solidified material in the solidified material remaining region can be promoted. Further, evaporation of the solvent from the pre-drying treatment liquid present in the portion of the liquid remaining region near the solidification remaining region can be promoted, and solidification formation can be promoted. This can promote the movement of the solidified material remaining region toward the peripheral edge portion side of the substrate surface and the expansion of the drying region. Therefore, the time of the pattern in which the stress caused by the solidified body acts on the substrate surface can be further shortened.
In another embodiment of the present invention, the pre-drying treatment liquid film removing unit includes a substrate rotating unit that rotates the substrate around a vertical axis passing through a central portion of the substrate surface during the drying region expanding. According to this apparatus, the centrifugal force is applied to the liquid film to remove a part of the pre-drying treatment liquid in the liquid film from the surface of the substrate, thereby thinning the liquid film. Therefore, the amount of solvent evaporated to form a solidified body is reduced, so that a solidified body can be formed quickly. Further, by thinning the liquid film of the treatment liquid before drying, the solidified material formed from the liquid film is thinned. Therefore, the solidified material can be sublimated rapidly in the drying region enlarging step. Therefore, the drying area can be rapidly enlarged. Therefore, the time of the pattern in which the stress caused by the solidified body acts on the substrate surface can be further shortened.
In another embodiment of the present invention, the pre-drying treatment liquid film removing means includes heating means for heating the solidification body in the solidification body remaining region and the pre-drying treatment liquid in a portion of the liquid remaining region near the solidification body remaining region during the expansion of the drying region. Therefore, sublimation of the solidified material in the solidified material remaining region can be promoted. Further, evaporation of the solvent from the pre-drying treatment liquid present in the portion of the liquid remaining region near the solidification remaining region can be promoted, and solidification formation can be promoted. This can promote the movement of the solidified material remaining region toward the peripheral edge portion side of the substrate surface and the expansion of the drying region. Therefore, the time of the pattern in which the stress caused by the solidified body acts on the substrate surface can be further shortened.
The above and still other objects, features and effects of the present invention will become apparent from the following description of embodiments thereof with reference to the accompanying drawings.
Drawings
Fig. 1 is a schematic plan view showing a layout of a substrate processing apparatus according to embodiment 1 of the present invention.
Fig. 2 is a schematic partial cross-sectional view showing a schematic configuration of a processing unit included in the substrate processing apparatus.
Fig. 3 is a block diagram showing an electrical configuration of a main portion of the substrate processing apparatus.
Fig. 4 is a flowchart for explaining an example of substrate processing performed by the substrate processing apparatus.
Fig. 5A is a schematic diagram for explaining a case of the pre-drying treatment liquid film forming step (step S5) of the substrate treatment.
Fig. 5B is a schematic diagram for explaining the case of the drying pretreatment liquid film forming step (step S5).
Fig. 5C is a schematic diagram for explaining the case of the pre-drying treatment liquid film removal step (step S6) of the substrate treatment.
Fig. 5D is a schematic diagram for explaining the case of the pre-drying treatment liquid film removal step (step S6).
Fig. 6A is a plan view of the substrate in the region co-existence state generation step in the pre-drying treatment liquid film removal step (step S6).
Fig. 6B is a plan view of the substrate in the drying region expansion step in the pre-drying treatment liquid film removal step (step S6).
Fig. 7 is a schematic view for explaining the case of the substrate surface in the drying region enlarging step.
Fig. 8A is a schematic partial cross-sectional view of a spin chuck and its peripheral components arranged in a processing unit included in the substrate processing apparatus according to embodiment 2.
Fig. 8B is a schematic plan view of the spin base and its peripheral components disposed in the processing unit of embodiment 2.
Fig. 9 is a schematic diagram for explaining a process of removing a liquid film before drying (step S6) in the substrate processing performed by the substrate processing apparatus according to embodiment 2.
Fig. 10 is a schematic view of the periphery of a spin chuck disposed in a processing unit included in the substrate processing apparatus according to embodiment 3.
Fig. 11 is a schematic diagram for explaining a process of removing a liquid film before drying (step S6) in the substrate processing performed by the substrate processing apparatus according to embodiment 3.
Fig. 12A is a schematic diagram for explaining a region coexistence state generation step performed by the substrate processing apparatus according to embodiment 4.
Fig. 12B is a schematic view for explaining a drying region expansion process performed by the substrate processing apparatus according to embodiment 4.
Fig. 13A is a schematic diagram for explaining a region coexistence state generation step performed by the substrate processing apparatus according to embodiment 5.
Fig. 13B is a schematic view for explaining a drying region expansion process performed by the substrate processing apparatus according to embodiment 5.
Detailed Description
Embodiment 1
Fig. 1 is a schematic plan view showing a layout of a substrate processing apparatus 1 according to embodiment 1 of the present invention.
The substrate processing apparatus 1 is a monolithic apparatus for processing substrates W such as silicon wafers one by one. In the present embodiment, the substrate W is a disk-shaped substrate.
The substrate processing apparatus 1 includes: a plurality of processing units 2 for processing the substrate W with a fluid; a load port LP for loading a carrier C accommodating a plurality of substrates W processed by the processing unit 2; transfer robots IR and CR for transferring the substrate W between the load port LP and the processing unit 2; and a controller 3 that controls the substrate processing apparatus 1.
The transfer robot IR transfers the substrate W between the carrier C and the transfer robot CR. The transfer robot CR transfers the substrate W between the transfer robot IR and the processing unit 2. The plurality of processing units 2 have the same configuration, for example. As will be described in detail later, the processing liquid supplied to the substrate W in the processing unit 2 includes a chemical liquid, a rinse liquid, a replacement liquid, a pre-drying processing liquid, and the like.
Each processing unit 2 includes a chamber 4 and a processing cup 7 disposed in the chamber 4, and processes a substrate W in the processing cup 7. An inlet/outlet 4a is formed in the chamber 4, and the inlet/outlet 4a is used for the transfer robot CR to carry in or carry out the substrate W. A shutter unit (not shown) for opening and closing the inlet/outlet 4a is disposed in the chamber 4.
Fig. 2 is a schematic diagram for explaining a configuration example of the processing unit 2. The processing unit 2 includes a spin chuck 5, an opposing member 6, a processing cup 7, a chemical liquid nozzle 8, a rinse liquid nozzle 9, a pre-drying treatment liquid nozzle 10, a replacement liquid nozzle 11, a center nozzle 12, and a lower surface nozzle 13.
The spin chuck 5 rotates the substrate W around a vertical rotation axis A1 (vertical axis) passing through a central portion of the substrate W while holding the substrate W horizontal. The spin chuck 5 includes a plurality of chuck pins 20, a spin base 21, a spin shaft 22, and a spin motor 23.
The rotation base 21 has a circular plate shape along the horizontal direction. A plurality of chuck pins 20 holding the periphery of the substrate W are arranged on the upper surface of the spin base 21 at intervals in the circumferential direction of the spin base 21. The spin base 21 and the plurality of chuck pins 20 constitute a substrate holding unit that holds the substrate W to be horizontal. The substrate holding unit is also referred to as a substrate holder.
The rotation shaft 22 extends in the vertical direction along the rotation axis A1. The upper end portion of the rotation shaft 22 is coupled to the center of the lower surface of the rotation base 21. The rotation motor 23 applies a rotation force to the rotation shaft 22. The rotation motor 23 rotates the rotation shaft 22, thereby rotating the rotation base 21. Thereby, the substrate W is rotated about the rotation axis A1. The rotation motor 23 is an example of a substrate rotation unit that rotates the substrate W around the rotation axis A1.
The opposing member 6 opposes the substrate W held by the spin chuck 5 from above. The opposing member 6 is formed in a disk shape having a diameter substantially equal to or larger than the diameter of the substrate W. The opposing member 6 has an opposing face 6a opposing the upper surface (upper surface) of the substrate W. The facing surface 6a is disposed along a substantially horizontal plane above the spin chuck 5.
A hollow shaft 60 is fixed to the opposite member 6 on the opposite side to the opposite surface 6a. In the counter member 6, an opening 6b is formed at a portion overlapping the rotation axis A1 in a plan view, and the opening 6b penetrates the counter member 6 up and down and communicates with the internal space 60a of the hollow shaft 60.
The opposing member 6 blocks the atmosphere in the space between the opposing surface 6a and the upper surface of the substrate W from the atmosphere outside the space. Therefore, the opposing member 6 is also called a blocking plate.
The processing unit 2 further includes an opposing member lifting unit 61 that drives lifting of the opposing member 6. The opposing member lifting unit 61 includes, for example: a ball screw mechanism (not shown) coupled to a support member (not shown) that supports the hollow shaft 60; and an electric motor (not shown) for applying a driving force to the ball screw mechanism. The opposing member elevating unit 61 is also called an opposing member lifter (shutter lifter).
The opposing member lifting unit 61 can position the opposing member 6 at an arbitrary position (height) from the lower position to the upper position. The lower position is a position where the opposing surface 6a is closest to the substrate W within the movable range of the opposing member 6. The upper position is a position where the facing surface 6a is farthest from the substrate W within the movable range of the facing member 6.
The treatment cup 7 comprises: a plurality of shields 71 for receiving liquid splashed outward from the substrate W held by the spin chuck 5; a plurality of cups 72 for receiving the liquid guided downward by the plurality of shields 71; and a cylindrical outer wall member 73 surrounding the plurality of shields 71 and the plurality of cups 72. Fig. 2 shows an example in which 4 shields 71 and 3 cups 72 are provided and the outermost cup 72 is integrated with the 3 rd shield 71 from the top.
The processing unit 2 includes a shield lifting unit 74 that lifts and lowers the plurality of shields 71 individually. The shroud lifting unit 74 includes, for example, a plurality of ball screw mechanisms (not shown) coupled to the respective shrouds 71, and a plurality of motors (not shown) for applying driving forces to the respective ball screw mechanisms. The shield lift unit 74 is also referred to as a shield lifter.
The hood lifting unit 74 positions the hood 71 at any position from the upper position to the lower position. Fig. 2 shows a state in which 2 shields 71 are arranged at the upper position and the remaining 2 shields 71 are arranged at the lower position. When the shield 71 is in the upper position, the upper end 71u of the shield 71 is disposed above the substrate W held by the spin chuck 5. When the shield 71 is in the lower position, the upper end 71u of the shield 71 is disposed below the substrate W held by the spin chuck 5.
When the processing liquid is supplied to the rotating substrate W, at least one shield 71 is disposed at the upper position. If the processing liquid is supplied to the substrate W in this state, the processing liquid is thrown off the substrate W by centrifugal force. The thrown-off processing liquid collides with the inner surface of the shield 71 horizontally opposed to the substrate W, and is guided to the cup 72 corresponding to the shield 71. Thereby, the processing liquid discharged from the substrate W is collected in the processing cup 7.
The chemical nozzle 8 is moved in the horizontal direction and the vertical direction by the chemical nozzle moving means 35. The chemical nozzle 8 is movable between a center position and an initial position (retracted position). When the chemical nozzle 8 is located at the center position, it faces the rotation center of the upper surface of the substrate W. The rotation center of the upper surface of the substrate W is a position intersecting the rotation axis A1 in the upper surface of the substrate W.
When the chemical nozzle 8 is positioned at the initial position, it is not opposed to the upper surface of the substrate W, and is positioned outside the processing cup 7 in a plan view. The chemical nozzle 8 can approach the upper surface of the substrate W or retract upward from the upper surface of the substrate W by moving in the vertical direction.
The chemical nozzle moving unit 35 includes, for example, an arm 35a that horizontally extends while supporting the chemical nozzle 8, and an arm driving unit 35b that drives the arm 35 a. The arm driving unit 35b includes: a rotation shaft (not shown) coupled to the arm 35a and extending in the vertical direction; and a rotation shaft driving unit (not shown) for lifting or rotating the rotation shaft.
The rotation shaft driving unit swings the arm 35a by rotating the rotation shaft about a vertical rotation axis. Further, the rotation shaft driving unit moves the arm 35a up and down by lifting and lowering the rotation shaft in the vertical direction. The chemical nozzle 8 moves in the horizontal direction and the vertical direction in response to the swing and the elevation of the arm 35 a.
The chemical nozzle 8 is connected to a chemical pipe 40 for guiding chemical. When the chemical liquid valve 50 interposed in the chemical liquid pipe 40 is opened, the chemical liquid is continuously discharged downward from the chemical liquid nozzle 8. The chemical nozzle 8 is an example of a chemical supply unit that supplies (ejects) chemical toward the upper surface of the substrate W.
The chemical liquid discharged from the chemical liquid nozzle 8 is, for example, a liquid containing at least one of sulfuric acid, acetic acid, nitric acid, hydrochloric acid, hydrofluoric acid, ammonia water, hydrogen peroxide water, an organic acid (for example, citric acid, oxalic acid, and the like), an organic base (for example, TMAH: tetramethylammonium hydroxide, and the like), a surfactant, and a preservative. Examples of the chemical solution obtained by mixing them include SPM solution (sulfuric acid/hydrogen peroxide mixture: sulfuric acid/hydrogen peroxide water mixture), SC1 solution (ammonia-hydrogen peroxide mixture: aqueous ammonia/hydrogen peroxide water mixture), and the like.
The rinse liquid nozzle 9 is moved in the horizontal direction and the vertical direction by the rinse liquid nozzle moving unit 36. The rinse liquid nozzle 9 is movable between a center position and an initial position (retracted position). The rinse liquid nozzle 9 is located at a center position so as to face the rotation center of the upper surface of the substrate W.
When the rinse liquid nozzle 9 is positioned at the initial position, it is not opposed to the upper surface of the substrate W, and is positioned outside the processing cup 7 in a plan view. The rinse liquid nozzle 9 can approach the upper surface of the substrate W or retract upward from the upper surface of the substrate W by moving in the vertical direction.
The rinse liquid nozzle moving unit 36 has the same structure as the chemical liquid nozzle moving unit 35. That is, the rinse liquid nozzle moving unit 36 includes, for example, an arm 36a that supports the rinse liquid nozzle 9 and extends horizontally, and an arm driving unit 36b that drives the arm 36 a.
The rinse liquid nozzle 9 is connected to a rinse liquid pipe 41 for guiding rinse liquid. When the rinse liquid valve 51 interposed in the rinse liquid piping 41 is opened, the rinse liquid is continuously discharged downward from the rinse liquid nozzle 9. The rinse liquid nozzle 9 is an example of a treatment liquid supply unit (rinse liquid supply unit) that supplies (ejects) a treatment liquid (rinse liquid) toward the upper surface of the substrate W.
The rinse liquid discharged from the rinse liquid nozzle 9 is DIW, for example. As the rinse liquid, a liquid containing water may be used in addition to DIW. Examples of the rinse liquid include carbonated water, electrolytic ion water, hydrogen water, ozone water, ammonia water, and hydrochloric acid water having a diluted concentration (for example, about 10ppm to 100 ppm) other than DIW.
The pre-drying treatment liquid nozzle 10 is moved in the horizontal direction and the vertical direction by the pre-drying treatment liquid nozzle moving unit 37. The pre-drying treatment liquid nozzle 10 is movable between a center position and an initial position (retracted position).
When the pre-drying treatment liquid nozzle 10 is located at the center position, it is opposed to the rotation center of the upper surface of the substrate W. When the pre-drying treatment liquid nozzle 10 is positioned at the initial position, it is not opposed to the upper surface of the substrate W, and is positioned outside the treatment cup 7 in a plan view. The pre-drying treatment liquid nozzle 10 can approach the upper surface of the substrate W or retract upward from the upper surface of the substrate W by moving in the vertical direction.
The pre-drying treatment liquid nozzle moving unit 37 has the same configuration as the chemical liquid nozzle moving unit 35. That is, the pre-drying treatment liquid nozzle moving means 37 includes, for example, an arm 37a that horizontally extends while supporting the pre-drying treatment liquid nozzle 10, and an arm driving means 37b that drives the arm 37 a.
The pre-drying treatment liquid nozzle 10 is connected to a pre-drying treatment liquid pipe 42 that guides the pre-drying treatment liquid to the pre-drying treatment liquid nozzle 10. When the pre-drying treatment liquid valve 52 interposed in the pre-drying treatment liquid pipe 42 is opened, the pre-drying treatment liquid is continuously discharged downward from the discharge port of the pre-drying treatment liquid nozzle 10. The pre-drying treatment liquid nozzle 10 is an example of a pre-drying treatment liquid supply means for supplying (ejecting) a pre-drying treatment liquid toward the upper surface of the substrate W.
The drying pretreatment liquid discharged from the drying pretreatment liquid nozzle 10 is a solution containing a sublimate corresponding to a solute and a solvent which is mutually soluble with the sublimate (dissolves the sublimate). The solvent evaporates (volatilizes) from the pretreatment liquid before drying, thereby precipitating a sublimate (solidified material) in a solid state.
The sublimating substance contained in the pretreatment liquid before drying may be a substance that changes from a solid to a gas without passing through a liquid at normal temperature (synonymous with room temperature) or normal pressure (a pressure in the substrate treatment apparatus 1, for example, a value of 1 gas pressure or the vicinity thereof).
The sublimating substance contained in the drying pretreatment liquid may be, for example, alcohols such as 2-methyl-2-propanol (alias: tert-butanol, third butanol) or cyclohexanol, hydrofluorocarbons, 1,3, 5-triAny one of alkane (alias: trioxymethylene), camphor (alias: camphorliquid, camphor), naphthalene and iodine may be used as well as other substances.
The solvent contained in the drying pretreatment liquid may be at least one selected from the group consisting of pure water, IPA, HFE (hydrofluoroether), acetone, PGMEA (propylene glycol monomethyl ether acetate), PGEE (propylene glycol monoethyl ether, 1-ethoxy-2-propanol), and ethylene glycol, for example.
For example, in the case of using camphor as a sublimating substance, IPA, acetone, PGEE, and the like can be used as a solvent. The solidification point of camphor (solidification point under 1-pressure, the same applies hereinafter) is 175-177 ℃. Regardless of which of IPA, acetone, and PGEE is used as the solvent, the freezing point of camphor is above the boiling point of the solvent. The solidifying point of camphor is higher than that of the treating liquid before drying. The solidification point of the treatment liquid before drying is lower than normal temperature (a value at or near 23 ℃). The substrate processing apparatus 1 is disposed in a clean room maintained at normal temperature. Therefore, the pre-drying treatment liquid can be maintained as a liquid without heating the pre-drying treatment liquid.
Unlike the present embodiment, the solvent contained in the pretreatment liquid before drying may be a substance having the same properties as the sublimating substance. That is, the pretreatment liquid before drying may contain 2 or more substances which change from solid to gas without passing through liquid at normal temperature or normal pressure. Examples of the drying pretreatment liquid containing 2 kinds of sublimates include a solution containing cyclohexanol as a solute and cyclohexane as a solvent.
The replacement liquid nozzle 11 is moved in the horizontal direction and the vertical direction by the replacement liquid nozzle moving means 38. The replacement liquid nozzle 11 is movable between a center position and an initial position (retracted position).
When the liquid replacement nozzle 11 is located at the center position, it is opposed to the rotation center of the upper surface of the substrate W. When the replacement liquid nozzle 11 is positioned at the initial position, it is not opposed to the upper surface of the substrate W, and is positioned outside the processing cup 7 in a plan view. The replacement liquid nozzle 11 can approach the upper surface of the substrate W or retract upward from the upper surface of the substrate W by moving in the vertical direction.
The replacement liquid nozzle moving unit 38 has the same configuration as the chemical liquid nozzle moving unit 35. That is, the replacement liquid nozzle moving means 38 includes, for example, an arm 38a that horizontally extends and supports the replacement liquid nozzle 11, and an arm driving means 38b that drives the arm 38 a.
The replacement liquid nozzle 11 is connected to a replacement liquid pipe 43 that guides the replacement liquid to the replacement liquid nozzle 11. When the replacement liquid valve 53 interposed in the replacement liquid pipe 43 is opened, the replacement liquid is continuously discharged downward from the discharge port of the replacement liquid nozzle 11. The replacement liquid nozzle 11 is an example of a replacement liquid supply unit that supplies (ejects) a replacement liquid toward the upper surface of the substrate W.
As described below, the replacement liquid is supplied to the upper surface of the substrate W covered with the liquid film of the rinse liquid, and the pre-drying treatment liquid is supplied to the upper surface of the substrate W covered with the liquid film of the replacement liquid. The replacement liquid is a liquid which is mutually soluble with the two liquids of the flushing liquid and the pretreatment liquid before drying. That is, the liquid phase of the substitution liquid is compatible (i.e., miscible) with the two liquids, i.e., the rinse liquid and the pretreatment liquid before drying. The substitution liquid is, for example, IPA. The substitution liquid may be a mixed liquid of IPA and HFE, and may contain at least one of IPA and HFE and components other than these. IPA is a liquid mixed with either water or hydrofluorocarbon.
The central nozzle 12 is accommodated in the inner space 60a of the hollow shaft 60 of the opposing member 6. The discharge port 12a provided at the front end of the central nozzle 12 is opposed to the central portion of the upper surface of the substrate W from above. The center portion of the upper surface of the substrate W refers to the rotation center of the substrate W and the peripheral region thereof. On the other hand, the peripheral edge of the upper surface of the substrate W and the peripheral area thereof are referred to as peripheral edge portions of the upper surface of the substrate.
The central nozzle 12 is connected to a 1 st gas pipe 44 that guides gas to the central nozzle 12. The 1 st gas pipe 44 is provided with a 1 st gas valve 54 and a 1 st gas flow rate adjustment valve 58. When the 1 st gas valve 54 is opened, the gas is continuously discharged downward from the discharge port 12a of the center nozzle 12. The flow rate of the gas ejected from the ejection port 12a of the central nozzle 12 is adjusted by adjusting the opening of the 1 st gas flow rate adjustment valve 58.
The gas ejected from the central nozzle 12 is, for example, nitrogen (N) 2 ) And inert gases. The gas ejected from the central nozzle 12 may be air. The inert gas is a gas inert to the upper surface of the substrate W or the pattern formed on the upper surface of the substrate W, and is not limited to nitrogen gas. Examples of the inert gas include rare gases such as argon, in addition to nitrogen.
The inner peripheral surface of the hollow shaft 60 of the counter member 6 and the outer peripheral surface of the central nozzle 12 form a cylindrical gas flow path 65 extending vertically. The gas flow path 65 is connected to the 2 nd gas pipe 45 for guiding a gas such as an inert gas to the gas flow path 65. The 2 nd gas pipe 45 is provided with a 2 nd gas valve 55 and a 2 nd gas flow rate adjustment valve 59. When the 2 nd gas valve 55 is opened, the gas is continuously discharged downward from the lower end portion of the gas flow path 65. The flow rate of the gas discharged from the gas flow path 65 is adjusted by adjusting the opening of the 2 nd gas flow rate adjustment valve 59.
The gas ejected from the gas flow path 65 is the same gas as the gas ejected from the central nozzle 12. That is, the gas ejected from the gas flow path 65 may be, for example, nitrogen (N 2 ) And the inert gas can be air.
The gas ejected from the gas flow path 65 and the gas ejected from the central nozzle 12 are blown together to the central portion of the upper surface of the substrate W through the opening 6b of the opposing member 6.
The lower surface nozzle 13 is inserted into a through hole 21a opened in the center of the upper surface of the rotating base 21. The ejection port 13a of the lower surface nozzle 13 is exposed from the upper surface of the rotation base 21. The ejection port 13a of the lower surface nozzle 13 is opposed to the central portion of the lower surface of the substrate W from below.
The lower surface nozzle 13 is connected to a heat medium pipe 46 that guides the heat medium to the lower surface nozzle 13. When the heat medium valve 56 interposed in the heat medium pipe 46 is opened, the heat medium is continuously discharged from the lower surface nozzle 13 toward the center of the lower surface of the substrate W. The lower nozzle 13 is an example of a heat medium supply unit that supplies a heat medium for heating the substrate W to the substrate W.
The heat medium discharged from the lower surface nozzle 13 is, for example, high-temperature DIW having a temperature higher than room temperature and lower than the boiling point of the solvent contained in the pre-drying treatment liquid. For example, when the solvent contained in the pre-drying treatment liquid is IPA, the temperature of the high-temperature DIW is set to 60 to 80 ℃. The heat medium ejected from the lower nozzle 13 is not limited to the high-temperature DIW, and may be a high-temperature inert gas, a high-temperature air, or the like.
Fig. 3 is a block diagram showing an electrical configuration of a main portion of the substrate processing apparatus 1. The controller 3 includes a microcomputer, and controls a control object included in the substrate processing apparatus 1 according to a predetermined control program.
Specifically, the controller 3 includes a processor (CPU (Central Processing Unit, central processing unit)) 3A and a memory 3B storing a control program. The controller 3 is configured to execute various controls for substrate processing by the processor 3A executing a control program.
In particular, the controller 3 is programmed to control the conveyance robot IR, CR, the rotation motor 23, the chemical liquid nozzle moving unit 35, the rinse liquid nozzle moving unit 36, the pre-drying treatment liquid nozzle moving unit 37, the replacement liquid nozzle moving unit 38, the opposing member elevating unit 61, the shield elevating unit 74, the chemical liquid valve 50, the rinse liquid valve 51, the pre-drying treatment liquid valve 52, the replacement liquid valve 53, the 1 st gas valve 54, the 2 nd gas valve 55, the heat medium valve 56, the 1 st gas flow rate adjusting valve 58, and the 2 nd gas flow rate adjusting valve 59.
Fig. 4 is a flowchart for explaining an example of substrate processing performed by the substrate processing apparatus 1. The processing realized by the execution of the program by the controller 3 is mainly shown in fig. 4. Fig. 5A to 5D are schematic views for explaining the respective steps of substrate processing.
Hereinafter, reference is mainly made to fig. 2 and 4. Reference is made to fig. 5A to 5D as appropriate.
As shown in fig. 4, for example, the substrate processing performed by the substrate processing apparatus 1 sequentially performs a substrate loading step (step S1), a chemical solution supplying step (step S2), a rinsing step (step S3), a replacement step (step S4), a pre-drying process liquid film forming step (step S5), a pre-drying process liquid film removing step (step S6), and a substrate unloading step (step S7).
First, an unprocessed substrate W is carried into the processing unit 2 from the carrier C by the carrying robot IR and CR (see fig. 1), and transferred to the spin chuck 5 (step S1). Thereby, the substrate W is horizontally held by the spin chuck 5 (substrate holding process). The spin chuck 5 holds the substrate W until the process of removing the liquid film before drying (step S6) is completed. When the substrate W is carried in, the opposing member 6 is retracted to the upper position, and the plurality of shields 71 are retracted to the lower position.
After the transfer robot CR is retracted outside the processing unit 2, the chemical supply process is started (step S2). In the chemical supply step, the upper surface of the substrate W is treated with the chemical.
Specifically, the rotation motor 23 rotates the rotation base 21. Thereby, the substrate W held horizontally is rotated (substrate rotation step). Then, the chemical liquid nozzle moving unit 35 moves the chemical liquid nozzle 8 to the processing position in a state where the opposing member 6 is located at the upper position. The treatment position of the chemical nozzle 8 is, for example, a center position. Then, the chemical solution valve 50 is opened in a state where at least 1 of the shields 71 is located at the upper position. Thereby, chemical is supplied (discharged) from the chemical nozzle 8 toward the center of the upper surface of the substrate W in a rotating state (chemical supply step, chemical discharge step).
The chemical liquid ejected from the chemical liquid nozzle 8 contacts the upper surface of the substrate W in a rotating state, and then flows outward along the upper surface of the substrate W by centrifugal force. Therefore, the chemical solution is supplied to the entire upper surface of the substrate W, and a liquid film of the chemical solution is formed to cover the entire upper surface of the substrate W.
Next, a rinsing process is started (step S3). In the rinsing step, the chemical solution on the substrate W is rinsed away by the rinse solution.
Specifically, when a predetermined time elapses after the start of the ejection of the chemical liquid, the chemical liquid valve 50 is closed. Thereby, the supply of the chemical solution to the substrate W is stopped. Then, the chemical liquid nozzle moving unit 35 moves the chemical liquid nozzle 8 to the initial position. Then, the rinse liquid nozzle moving unit 36 moves the rinse liquid nozzle 9 to the processing position while maintaining the facing member 6 at the upper position. The treatment position of the rinse liquid nozzle 9 is, for example, a central position. Then, the rinse liquid valve 51 is opened. Thereby, the rinse liquid is supplied (discharged) from the rinse liquid nozzle 9 toward the center portion of the upper surface of the substrate W in the rotated state (rinse liquid supply step, rinse liquid discharge step).
Before the start of the discharge of the rinse liquid, the shield lift unit 74 may vertically move at least one shield 71 to switch the shield 71 receiving the liquid discharged from the substrate W.
After the rinse liquid discharged from the rinse liquid nozzle 9 touches the upper surface of the substrate W in a rotating state, the rinse liquid flows outward along the upper surface of the substrate W by centrifugal force. Accordingly, the rinse liquid is supplied to the entire upper surface of the substrate W, and a liquid film of the rinse liquid is formed to cover the entire upper surface of the substrate W.
Next, a replacement step (step S4) is performed in which a replacement liquid, which is compatible with both the rinse liquid and the pretreatment liquid before drying, is supplied to the upper surface of the substrate W, and the rinse liquid on the substrate W is replaced with the replacement liquid.
Specifically, when a predetermined time elapses after the start of the discharge of the rinse liquid, the rinse liquid valve 51 is closed. Thereby, the supply of the rinse liquid to the substrate W is stopped. Then, the rinse liquid nozzle moving unit 36 moves the rinse liquid nozzle 9 to the initial position. Then, the replacement liquid nozzle moving unit 38 moves the replacement liquid nozzle 11 to the processing position in a state where the opposing member 6 is located at the upper position. The treatment position of the replacement liquid nozzle 11 is, for example, a center position. Then, the substitution liquid valve 53 is opened. Thereby, the replacement liquid is supplied (discharged) from the replacement liquid nozzle 11 toward the center portion of the upper surface of the substrate W in the rotated state (replacement liquid supply step, replacement liquid discharge step).
Before starting to eject the replacement liquid, the shield lifting unit 74 may vertically move at least one shield 71 to switch the shield 71 receiving the liquid discharged from the substrate W.
After the liquid discharged from the liquid discharge nozzle 11 touches the upper surface of the substrate W in a rotating state, the liquid flows outward along the upper surface of the substrate W by centrifugal force. Accordingly, the replacement liquid is supplied to the entire upper surface of the substrate W, and a liquid film of the replacement liquid is formed to cover the entire upper surface of the substrate W.
Next, after the rinse liquid on the substrate W is replaced with the replacement liquid, a pre-drying treatment liquid film forming step (step S5) is performed, and the pre-drying treatment liquid is supplied to the upper surface of the substrate W, whereby a liquid film 100 of the pre-drying treatment liquid (pre-drying treatment liquid film) is formed on the substrate W.
Specifically, when a predetermined time elapses after the start of the ejection of the substitution liquid, the substitution liquid valve 53 is closed. Thereby, the supply of the replacement liquid to the substrate W is stopped. Then, the replacement liquid nozzle moving unit 38 moves the replacement liquid nozzle 11 to the initial position. Then, in a state where the opposing member 6 is located at the upper position, the pre-drying treatment liquid nozzle moving unit 37 moves the pre-drying treatment liquid nozzle 10 to the treatment position. The treatment position of the pre-drying treatment liquid nozzle 10 is, for example, a center position. Then, the pre-drying treatment liquid valve 52 is opened. As a result, as shown in fig. 5A, the pre-drying treatment liquid is supplied (discharged) from the pre-drying treatment liquid nozzle 10 toward the center of the upper surface of the substrate W in the rotated state.
Before starting to discharge the pre-drying treatment liquid, the shield lifting unit 74 may vertically move at least one shield 71 to switch the shield 71 receiving the liquid discharged from the substrate W.
In the drying pretreatment liquid film forming step, the substrate W continues to rotate. That is, the substrate rotation step is performed in parallel with the pre-drying treatment liquid film forming step. During the ejection of the pre-drying treatment liquid, the substrate W rotates at a prescribed pre-drying treatment liquid speed. The speed of the pre-drying treatment liquid is, for example, 300rpm. After the pre-drying treatment liquid ejected from the pre-drying treatment liquid nozzle 10 touches the upper surface of the substrate W in a rotating state, the pre-drying treatment liquid flows outward along the upper surface of the substrate W by centrifugal force. Therefore, the pre-drying treatment liquid is supplied to the entire upper surface of the substrate W, and a liquid film 100 of the pre-drying treatment liquid is formed to cover the entire upper surface of the substrate W. In this way, the pre-drying treatment liquid nozzle 10 functions as a pre-drying treatment liquid film forming means for forming the liquid film 100 of the pre-drying treatment liquid on the upper surface of the substrate W.
When the pre-drying treatment liquid nozzle 10 ejects the pre-drying treatment liquid, the pre-drying treatment liquid nozzle moving means 37 may fix the position of the pre-drying treatment liquid nozzle 10 so that the contact position of the pre-drying treatment liquid is stationary at the center portion, or may move the pre-drying treatment liquid nozzle 10 so that the contact position of the pre-drying treatment liquid on the upper surface of the substrate W is moved between the center portion and the outer peripheral portion.
When a predetermined time elapses after the start of the discharge of the pre-drying treatment liquid, the pre-drying treatment liquid valve 52 is closed. Thereby, the supply of the pre-drying treatment liquid to the substrate W is stopped. Then, the pre-drying treatment liquid nozzle moving unit 37 moves the pre-drying treatment liquid nozzle 10 to the initial position. Substantially simultaneously with stopping the ejection of the pre-drying treatment liquid, the substrate W is rotated at a reduced speed as shown in fig. 5B. The rotation speed of the substrate W is changed to a predetermined liquid-coating speed. The liquid coating speed is low enough to hold the liquid film 100 on the substrate W even when the supply of the pre-drying treatment liquid is stopped. The speed of the liquid coating is, for example, 10rpm to 50rpm.
Next, a pre-drying treatment liquid film removal step (step S6) is performed, in which the solvent is evaporated from the liquid film 100 of the pre-drying treatment liquid to form a solidified body 101 on the upper surface of the substrate W (see fig. 5C), and the solidified body 101 is sublimated, whereby the liquid film 100 is removed from the upper surface of the substrate W.
Specifically, as shown in fig. 5C, the opposing member lifting unit 61 moves the opposing member 6 to the lower position. Then, the 1 st gas valve 54 and the 2 nd gas valve 55 are opened. Thereby, a gas such as nitrogen gas is blown from the opening 6b of the opposing member 6 toward the central portion of the upper surface of the substrate W.
By blowing a gas toward the center of the upper surface of the substrate W, the solvent in the vicinity of the rotation center of the liquid film 100 of the pre-drying treatment liquid is evaporated to form a solidified body 101. By continuously blowing gas toward the central portion of the upper surface of the substrate W, the solidified body 101 sublimates to dry the upper surface of the substrate W, and the solvent around the dried portion evaporates to form a solidified body 101.
Thereby, a dried region D in which the upper surface of the substrate W is dried and a solidified material remaining region S in which the solidified material 101 remains are formed in the central portion of the upper surface of the substrate W. The liquid remaining region L of the liquid film 100 in which the pre-drying treatment liquid remains is maintained on the peripheral edge portion side of the upper surface of the substrate W than the solidification product remaining region S.
As shown in fig. 6A, the drying region D formed by blowing the gas is circular in shape centering on the rotation center of the upper surface of the substrate W in a plan view. The solidified residual region S is annular surrounding the drying region D in plan view, and is adjacent to the drying region D from the peripheral edge portion side of the upper surface of the substrate W. The liquid remaining region L is annular and surrounds the drying region D and the solidified material remaining region S in plan view, and is adjacent to the solidified material remaining region S from the peripheral edge portion side of the upper surface of the substrate W.
In this way, by blowing the gas toward the central portion of the upper surface of the substrate W, the region-side state is generated in which the dry region D, the solidified material remaining region S, and the liquid remaining region L are arranged in this order from the central portion of the upper surface of the substrate W toward the peripheral portion of the upper surface of the substrate W (region-side state generating step).
In the pre-drying treatment liquid film removal step, the substrate rotation step is continued. That is, the substrate rotation step is performed in parallel with the pre-drying treatment liquid film removal step.
The substrate W is accelerated to rotate (spin-up process) almost at the same time as the start of blowing the gas. That is, the spin-up step is performed substantially simultaneously with the start of the pre-drying treatment liquid film removal step. The rotation speed of the substrate W is changed to a predetermined liquid film removal speed. The liquid film removal speed is higher than the liquid coating speed, for example, 300rpm to 500rpm.
By the rotation of the substrate W at the liquid film removal speed, the liquid film 100 on the substrate W becomes thin. Therefore, the evaporation amount of the solvent required for forming the solidified body 101 and the sublimation amount of the solidified body 101 required for drying the upper surface of the substrate W are reduced. Thereby, the generation of the region coexistence state is promoted.
In addition, by opening the heat medium valve 56, the heat medium is ejected from the lower surface nozzle 13 toward the center portion of the lower surface of the substrate W while the blowing of the gas is started. After the heat medium ejected from the lower surface nozzle 13 touches the lower surface of the substrate W in a rotating state, the heat medium flows outward along the lower surface of the substrate W by centrifugal force. Thereby, the heat medium diffuses to the entire lower surface of the substrate W. The substrate W is heated by a heat medium supplied to the lower surface of the substrate W. The thermal medium heats the liquid film 100 on the substrate W through the substrate W. Thus, the solvent evaporation and sublimation of the solidified material 101 are promoted. As a result, the generation of the region coexistence state is promoted.
After the region coexistence state is generated, the gas is continuously blown to the central portion of the upper surface of the substrate W, the substrate W is continuously rotated at the liquid film removal speed, and the heat medium is continuously supplied to the central portion of the lower surface of the substrate W. Therefore, in the solidification product remaining region S, the solidification product 101 sublimates to dry the substrate W, and the solvent of the pre-drying treatment liquid in the portion of the liquid remaining region L near the solidification product remaining region S evaporates to reform the solidification product 101. As a result, as shown in fig. 5D, the drying region D is enlarged so that the solidified residual region S moves toward the peripheral edge portion of the upper surface of the substrate W while maintaining the region-side state (drying region enlarging step).
Specifically, during the expansion of the drying region D, the gas blown to the central portion of the upper surface of the substrate W flows along the upper surface of the substrate W toward the peripheral portion of the upper surface of the substrate W. The gas collides with the solidification body 101 and the portion of the liquid film 100 of the liquid remaining region L adjacent to the solidification body remaining region S in the middle of the peripheral edge portion facing the upper surface of the substrate W. Thus, the gas is supplied to both the solidified material 101 in the solidified material remaining region S and the portion of the liquid film 100 in the liquid remaining region L near the solidified material remaining region S (gas supply step). Thereby, sublimation of the solidification body 101 in the solidification body remaining region S is promoted, and evaporation of the solvent of the pre-drying treatment liquid in the portion of the liquid remaining region L near the solidification body remaining region S is promoted. That is, the central nozzle 12 and the gas flow path 65 function as a gas supply unit.
The 1 st gas flow rate adjustment valve 58 and the 2 nd gas flow rate adjustment valve 59 may be controlled to increase the flow rate of the gas ejected from at least one of the central nozzle 12 and the gas flow path 65 at a predetermined point in the process of expanding the drying region D.
In addition, during the expansion of the drying region D, the entire liquid film 100 is heated through the substrate W by the heat medium supplied from the lower nozzle 13 to the lower surface of the substrate W. Therefore, the portion of the solidified material 101 in the solidified material remaining region S and the portion of the liquid film 100 in the liquid remaining region L close to the solidified material remaining region S are heated (heating step). Thereby, sublimation of the solidification body 101 in the solidification body remaining region S is promoted, and evaporation of the solvent of the pre-drying treatment liquid in the portion of the liquid remaining region L near the solidification body remaining region S is promoted. That is, the lower surface nozzle 13 functions as a heating means.
As shown in fig. 6B, the drying region D is enlarged so that the solidified material remaining region S moves toward the peripheral edge portion of the upper surface of the substrate W while maintaining the solidified material remaining region S in a circular ring shape surrounding the drying region D. During the expansion of the drying region D, the drying region D is maintained in a circular shape centering on the rotation center of the upper surface of the substrate W in a plan view. During the expansion of the drying area D, the liquid remaining area L maintains a circular ring shape surrounding the drying area D.
Although not shown, the outer peripheral edge of the solidified material remaining area S reaches the peripheral edge of the upper surface of the substrate W after a while by expanding the drying area D, and the liquid remaining area L disappears. Finally, by further expanding the drying region D, the peripheral edge of the drying region D reaches the peripheral edge of the substrate W, and the solidified residual region S disappears. That is, the dry region D is enlarged to the entire upper surface of the substrate W. In other words, the liquid film 100 and the solidified material 101 are removed from the entire upper surface of the substrate W, and the upper surface of the substrate W is dried (a pre-drying treatment liquid film removing step).
In this way, the gas is blown onto the central portion of the upper surface of the substrate W, the substrate W is rotated at the liquid film removal speed, and the heat medium is supplied onto the central portion of the lower surface of the substrate W, whereby the liquid film 100 and the solidified body 101 of the pre-drying treatment liquid are removed from the upper surface of the substrate W. Specifically, the region-side condition is generated, and the drying region D is enlarged so that the solidified material remaining region S moves toward the peripheral edge portion of the upper surface of the substrate W while the region-side condition is maintained. In the present embodiment, the gas supply means (the central nozzle 12 and the gas flow path 65), the rotation motor 23, and the lower surface nozzle 13 constitute a pretreatment liquid film removal means.
When the liquid film 100 and the solidified material 101 are removed from the upper surface of the substrate W, the rotation of the substrate W is stopped. The shield elevating unit 74 moves all the shields 71 to the lower position. Then, the 1 st gas valve 54, the 2 nd gas valve 55, and the heat medium valve 56 are closed. Then, the opposing member lifting unit 61 moves the opposing member 6 to the upper position.
The transfer robot CR enters the processing unit 2, picks up the processed substrate W from the chuck pins 20 of the spin chuck 5, and carries out the substrate W outside the processing unit 2 (step S7). The substrate W is transferred from the transfer robot CR to the transfer robot IR, and is accommodated in the carrier C by the transfer robot IR.
Fig. 7 is a schematic view for explaining the case of the upper surface of the substrate in the drying region enlarging step.
A fine pattern 160 is formed on the upper surface of the substrate W to be subjected to the substrate process. The pattern 160 includes fine convex structures 161 formed on the upper surface of the substrate W, and recesses (grooves) 162 formed between adjacent structures 161. In the case where the structure 161 is cylindrical, a recess is formed inside the structure 161.
The structure 161 may include an insulator film or a conductor film. The structure 161 may be a laminated film obtained by laminating a plurality of films.
The aspect ratio of the pattern 160 is, for example, 10 to 50. The width of the structures 161 may be about 10nm to 45nm, and the interval between the structures 161 may be about 10nm to several μm. The height of the structure 161 may be, for example, about 50nm to 5. Mu.m.
In the drying region expansion step, the solidified body 101 gradually becomes thinner due to sublimation. In the solidification product remaining region S, the longer the time elapsed after formation in the solidification product 101, the faster the sublimation proceeds. Therefore, the longer the time elapsed after formation, the thinner the thickness of the solidified body 101. That is, the solidified material 101 is thinned from the peripheral edge portion side toward the center portion side on the upper surface of the substrate W. After the solidification body 101 above the front end of the structure 161 sublimates, the solidification body 101 in the recess 162 sublimates. The upper surface of the substrate W is dried by complete sublimation of the solidified body 101 within the recess 162. Thus, the portion of the upper surface of the substrate W that was previously the solidified material remaining region S becomes the dry region D. Before all the solidification body 101 is completely sublimated, the solvent in the vicinity of the boundary between the solidification body residual region S and the liquid residual region L evaporates to reform the solidification body 101. Therefore, the solidified material remaining area S gradually moves toward the peripheral edge portion of the upper surface of the substrate W so that the positions of the liquid film 100 and the solidified material 101 move from the position indicated by the two-dot chain line in fig. 7 to the position indicated by the solid line in fig. 7. As a result, the drying region D is enlarged so that the solidified residual region S moves toward the peripheral edge portion of the upper surface of the substrate W while maintaining the region-side state (drying region enlarging step).
According to embodiment 1, the drying region D is enlarged while maintaining the region-concurrent state, so that the liquid film 100 before drying is removed from the upper surface of the substrate W. Thereby, the entire upper surface of the substrate W can be dried.
When the drying region D is enlarged, the solidified residual region S moves toward the peripheral edge portion of the upper surface of the substrate. Therefore, at any portion of the upper surface of the substrate W, the solidified body 101 formed at that portion is sublimated without waiting for the formation of the solidified body 101 at other portions. Therefore, compared to a method in which the solidification body 101 starts to sublimate after the solidification body 101 is formed over the entire upper surface of the substrate W, the time for maintaining the solidification body 101 can be shortened at any portion of the upper surface of the substrate W. In other words, the time in which the stress caused by the solidified body 101 acts on the structural body 161 of the pattern 160 on the upper surface of the substrate W can be shortened.
As a result, the influence of the stress caused by the solidified body 101 containing the sublimating substance can be reduced, and therefore, the collapse of the structural body 161 of the pattern 160 can be reduced.
In addition, according to embodiment 1, in the drying region enlarging step, the drying region D is enlarged so that the solidified residual region S moves toward the peripheral edge portion of the upper surface of the substrate W while maintaining the solidified residual region S in the annular shape. Therefore, the solidified residual region S moves toward the peripheral edge of the upper surface of the substrate W while scanning the entire upper surface of the substrate W. Therefore, the time for which the stress caused by the solidified body 101 acts on the pattern can be shortened in the entire upper surface of the substrate W. Thus, collapse of the structures 161 of the pattern 160 can be reduced over the entire upper surface of the substrate W.
In addition, according to embodiment 1, during the expansion of the drying region D, gas is supplied from the opening 6b of the opposing member 6 toward the solidification body 101 of the solidification body residual region S and the pre-drying treatment liquid present in the portion of the liquid residual region L near the solidification body residual region S. Therefore, sublimation of the solidified body 101 in the solidified body remaining region S can be promoted. Further, the solvent can be further promoted to evaporate from the drying pretreatment liquid present in the portion of the liquid remaining region L near the solidification residual region S, thereby promoting the formation of the solidification 101. This can promote the movement of the solidified residual region S toward the peripheral edge portion side of the upper surface of the substrate W and the expansion of the drying region D. Therefore, the time in which the stress caused by the solidified body 101 acts on the structural body 161 of the pattern 160 on the upper surface of the substrate W can be further shortened.
In addition, according to embodiment 1, in the process of expanding the drying region D, the solidification body 101 in the solidification body residual region S and the pre-drying treatment liquid in the portion of the liquid residual region L near the solidification body residual region S are heated via the substrate W by the heat medium discharged from the lower surface nozzle 13. Therefore, sublimation of the solidification body 101 in the solidification body remaining region S can be promoted, and evaporation of the solvent from the liquid film 100 existing in the portion of the liquid remaining region L near the solidification body remaining region S can be promoted, thereby promoting formation of the solidification body 101. This promotes the movement of the solidified residual region S toward the peripheral edge portion side of the upper surface of the substrate W and the expansion of the drying region D while maintaining the region-side state. Therefore, the time in which the stress caused by the solidified body 101 acts on the structural body 161 of the pattern 160 on the upper surface of the substrate W can be further shortened.
In addition, according to embodiment 1, the substrate W is accelerated and rotated while starting the region concurrent state generation process (starting to blow gas). That is, the substrate W rotates at a relatively low speed (liquid coating speed) immediately before the start of blowing the gas, and rotates at a relatively high speed (liquid film removal speed) after the start of blowing the gas.
Therefore, immediately before the blowing of the gas, the liquid film 100 can be maintained in a sufficiently thick state. Therefore, the entire upper surface of the substrate W can be reliably covered with the liquid film 100 of the pre-drying treatment liquid. On the other hand, after the start of the blowing of the gas, the centrifugal force acting on the liquid film 100 increases, so that the liquid film 100 of the pre-drying treatment liquid becomes thin. Therefore, the amount of solvent evaporated to form the solidified body 101 is reduced, so that the solidified body 101 can be formed quickly. Further, by thinning the liquid film 100 of the pre-drying treatment liquid, the solidified material 101 formed by the liquid film 100 is thinned. Thus, the solidified body 101 can be sublimated quickly. Thus, the drying region D can be rapidly enlarged in the pre-drying treatment liquid film removal step.
In addition, according to embodiment 1, the substitution liquid is compatible with both the rinse liquid and the pretreatment liquid before drying. Therefore, even when the rinse liquid and the pre-drying treatment liquid are not mixed, the rinse liquid on the substrate W is replaced with the replacement liquid, and then the pre-drying treatment liquid is supplied to the upper surface of the substrate W, whereby the liquid film 100 of the pre-drying treatment liquid can be formed on the upper surface of the substrate. Therefore, the degree of freedom in selecting the rinse liquid and the pre-drying treatment liquid increases. Accordingly, the pre-drying treatment liquid containing an appropriate sublimation material can be selected from the viewpoint of the influence of the stress caused by the solidified material 101 on the pattern collapse, irrespective of the type of the rinse liquid. Accordingly, collapse of the structure 161 of the pattern 160 may be further reduced.
< embodiment 2 >
Fig. 8A is a schematic partial cross-sectional view of the periphery of the spin chuck 5 disposed in the processing unit 2P included in the substrate processing apparatus 1 according to embodiment 2. Fig. 8B is a schematic plan view of the spin base 21 and its peripheral components disposed in the processing unit 2P. In fig. 8A and 8B and fig. 9 described below, the same reference numerals as those in fig. 1 and the like are given to the same components as those in fig. 1 to 7, and the description thereof is omitted.
The main difference between the processing unit 2P of embodiment 2 and the processing unit 2 (see fig. 2) of embodiment 1 is that a heater unit 130 is provided between the spin base 21 and the substrate W so as to be capable of being lifted and lowered.
The heater unit 130 has a disk-shaped heating plate form. The heater unit 130 has an opposing surface 130a opposing the lower surface of the substrate W from below.
The heater unit 130 includes a plate main body 131, a plurality of support pins 132, and a heater 133. The plate body 131 is slightly smaller than the substrate W in plan view. A plurality of support pins 132 protrude from the upper surface of the plate body 131. The upper surface of the plate body 131 and the surfaces of the plurality of support pins 132 constitute an opposing surface 130a.
The heater 133 may also be a resistor built in the board body 131. The heater 133 is supplied with electric power from the heater energizing unit 135 via the power supply line 134. The facing surface 130a is heated by energizing the heater 133. The heater energizing unit 135 is, for example, a power supply device.
The heater unit 130 is horizontally supported by a support shaft 136 extending downward from a central portion of the heater unit 130.
The center line of the heater unit 130 is disposed on the rotation axis A1 of the substrate W. Even if the spin base 21 rotates, the heater unit 130 does not rotate. The heater unit 130 has an outer diameter smaller than the diameter of the substrate W. The plurality of chuck pins 20 are arranged around the heater unit 130.
The heater unit 130 is movable up and down with respect to the rotation base 21. The heater unit 130 is connected to a heater elevating unit 137 via a support shaft 136. The heater elevation unit 137 vertically elevates the heater unit 130 between an upper position (a position indicated by a solid line) and a lower position (a position indicated by a two-dot chain line). The upper position is a contact position where the heater unit 130 contacts the lower surface of the substrate W. The lower position is a separation position where the heater unit 130 is disposed between the lower surface of the substrate W and the upper surface of the spin base 21 in a state of being away from the substrate W.
The heater lifting unit 137 includes, for example, a ball screw mechanism (not shown) and an electric motor (not shown) for applying a driving force to the ball screw mechanism. The heater elevation unit 137 is also called a heater elevation.
The heater unit 130 may be configured to lift the substrate W from the chuck pins 20 and support the substrate W with the facing surface 130a during the lifting to the upper position. For this reason, the chuck pins 20 must be configured to be openable and closable between a closed state in which they contact the peripheral end of the substrate W to hold the substrate W and an open state in which they retract from the peripheral end of the substrate W, and in the open state, they are separated from the peripheral end of the substrate W to release the holding, while they contact the lower surface of the peripheral edge portion of the substrate W to support the substrate W from below.
The processing unit 2P further includes a chuck pin driving unit 140 for driving the plurality of chuck pins 20 to open and close, as a configuration for opening and closing the plurality of chuck pins 20. The chuck pin driving unit 140 includes, for example, a link mechanism 141 built in the rotation base 21, and a driving source 142 disposed outside the rotation base 21. The drive source 142 includes, for example, a ball screw mechanism (not shown) and an electric motor (not shown) for applying a driving force to the ball screw mechanism.
The heater elevation unit 137 positions the heater unit 130 at any position from the upper position to the lower position. If the heater unit 130 is raised to the upper position in a state where the substrate W is supported by the plurality of chuck pins 20 from below and the holding of the substrate W by the plurality of chuck pins 20 has been released, the plurality of support pins 132 of the heater unit 130 contact the lower surface of the substrate W, and the substrate W is supported by the heater unit 130.
Thereafter, the substrate W is lifted by the heater unit 130 and separated upward from the plurality of chuck pins 20. When the heater unit 130 located at the upper position is lowered to the lower position, the substrate W on the heater unit 130 is placed on the plurality of chuck pins 20, and the heater unit 130 is separated downward from the substrate W. Thereby, the substrate W is handed over between the plurality of chuck pins 20 and the heater unit 130.
Referring to the portion shown by the two-dot chain line in fig. 3, the controller 3 of embodiment 2 controls the heater energizing unit 135, the heater elevating unit 137, and the chuck pin driving unit 140 in addition to the object controlled by the controller 3 of embodiment 1.
In the substrate processing apparatus 1 according to embodiment 2, the same substrate processing as in the flowchart shown in fig. 4 can be performed. Specifically, the substrate processing according to embodiment 2 is substantially the same as the substrate processing according to embodiment 1, except that the temperature adjustment (heating) of the substrate W in the pre-drying process liquid film removal step (step S6) is performed by using the heater unit 130. Fig. 9 is a schematic diagram for explaining a process liquid film removal step (step S6) before drying in substrate processing performed by the substrate processing apparatus 1 according to embodiment 2.
Specifically, as shown in fig. 9, in a state where power is supplied to the heater unit 130, the heater elevating unit 137 moves the heater unit 130 from the lower position to the approach position where the heater unit 130 approaches the lower surface of the substrate W in a noncontact manner, substantially simultaneously with starting the supply of gas to the upper surface of the substrate W. Thus, the heating of the substrate W is started substantially simultaneously with the start of the supply of the gas (the generation of the region coexistence state) to the upper surface of the substrate W by the radiant heat of the heater unit 130.
Depending on the set temperature of the heater unit 130, there are cases where: even in a state where the heater unit 130 is located at the lower position, the substrate W is heated by radiant heat of the heater unit 130. In this case, the heating of the substrate W is enhanced at substantially the same time as the supply of the gas to the upper surface of the substrate W is started by the radiant heat of the heater unit 130.
The heating of the substrate W by the heater unit 130 is continued during the expansion of the drying region D. Thereby, the entire solid 101 and the liquid film 100 are heated through the substrate W. That is, the solidified material 101 in the solidified material remaining region S and the liquid film 100 in the liquid remaining region L near the solidified material remaining region S are heated (heating step). In embodiment 2, the heater unit 130 functions as a heating unit.
As in embodiment 1, the substrate W is accelerated and rotated (substrate rotation step, spin-up step) substantially simultaneously with the start of the supply of the gas to the substrate W. The rotation speed of the substrate W is changed from the predetermined liquid coating speed to the predetermined liquid film removal speed.
During the expansion of the drying region D, the gas continues to be discharged from the central nozzle 12 and the gas flow path 65, and thereby the gas is supplied to the solidified material 101 in the solidified material remaining region S and the liquid film 100 in the portion of the liquid remaining region L near the solidified material remaining region S (gas supply step).
In embodiment 2, the drying area D is promoted to be enlarged by the gas being ejected from the central nozzle 12 and the gas flow path 65 to generate an area coexistence state. In addition, by heating by the heater unit 130 and rotating the substrate W by the rotation motor 23, the generation of the region coexistence state and the expansion of the drying region D are promoted. Therefore, the gas supply unit (the central nozzle 12 and the gas flow path 65), the rotation motor 23, and the heater unit 130 constitute a pre-drying treatment liquid film removal unit.
The shapes of the drying region D, the solidified material remaining region S, and the liquid remaining region L and the principle of enlarging the drying region D are the same as those of embodiment 1, and therefore, their descriptions (see fig. 6A to 7) are omitted.
According to embodiment 2, the same effects as those of embodiment 1 are exhibited.
In the substrate processing according to embodiment 2, the liquid film 100 and the solidified material 101 may be heated by supplying a heat medium from the lower nozzle 13 to the lower surface of the substrate W, in addition to the heater unit 130.
The heater unit 130 may lift the substrate W without rotating the substrate W in the pre-drying process liquid film removal step. In this case, the chuck pins 20 must be set to an open state.
Embodiment 3
Fig. 10 is a schematic view of the periphery of the spin chuck 5 disposed in the processing unit 2Q included in the substrate processing apparatus 1 according to embodiment 3. In fig. 10 and fig. 11 described below, the same reference numerals as those in fig. 1 and the like are given to the same components as those in fig. 1 to fig. 9, and the description thereof is omitted.
The main difference between the processing unit 2Q of embodiment 3 and the processing unit 2 (see fig. 2) of embodiment 1 is that the built-in heater 150 is incorporated in the opposing member 6.
As shown in fig. 10, the built-in heater 150 is disposed inside the opposing member 6. The built-in heater 150 is lifted and lowered together with the opposing member 6. The substrate W is disposed below the built-in heater 150. The built-in heater 150 is, for example, a resistor. The built-in heater 150 is supplied with electric power from a heater energizing unit 152 via a power supply line (not shown). By energizing the built-in heater 150, the facing surface 6a of the facing member 6 is heated. The heater energizing unit 152 is, for example, a power supply device.
Referring to the portion shown by the two-dot chain line in fig. 3, the controller 3 of embodiment 3 controls the heater energizing unit 152 in addition to the object controlled by the controller 3 of embodiment 1.
In the substrate processing apparatus 1 according to embodiment 3, the same substrate processing as in the flowchart shown in fig. 4 can be performed. Specifically, the substrate processing in embodiment 3 is substantially the same as the substrate processing in embodiment 1, except that the heating of the liquid film 100 and the solidified material 101 in the pre-drying treatment liquid film removing step (step S6) is performed by using the built-in heater 150. Fig. 11 is a schematic diagram for explaining a process of removing a liquid film before drying (step S6) by the substrate processing apparatus 1 according to embodiment 3.
Specifically, as shown in fig. 11, in a state where power is supplied to the built-in heater 150, the opposing member lifting unit 61 starts to supply gas to the upper surface of the substrate W and simultaneously disposes the opposing member 6 at the lower position. By this, the supply of the gas (the generation of the region coexistence state) to the upper surface of the substrate W is started and the heating of the liquid film 100 on the substrate W is started by the radiant heat of the built-in heater 150.
The heating of the substrate W by the built-in heater 150 continues during the expansion of the drying region D. This heats the entire solid 101 and liquid film 100 during the expansion of the drying area D. That is, the portion of the solidified material 101 in the solidified material remaining region S and the portion of the liquid film 100 in the liquid remaining region L near the solidified material remaining region S are heated (heating step). In embodiment 3, the built-in heater 150 functions as a heating means.
In the process of expanding the drying region D, the gas is ejected from the central nozzle 12 and the gas flow path 65, whereby the gas is blown to the solidified material 101 in the solidified material remaining region S and the liquid film 100 in the portion of the liquid remaining region L close to the solidified material remaining region S (gas supply step).
As in embodiment 1, the substrate W is accelerated and rotated (substrate rotation step, spin-up step) substantially simultaneously with the start of the supply of the gas to the substrate W. The rotation speed of the substrate W is changed from the predetermined liquid coating speed to the predetermined liquid film removal speed.
In embodiment 3, the drying area D is promoted to be enlarged by the gas being ejected from the central nozzle 12 and the gas flow path 65 to generate an area coexistence state. In addition, by heating with the built-in heater 150 and rotating the substrate W with the rotation motor 23, the generation of the region concurrent state and the expansion of the drying region D are promoted. Therefore, the gas supply unit (the central nozzle 12 and the gas flow path 65), the rotary motor 23, and the built-in heater 150 constitute a pre-drying treatment liquid film removal unit.
The shapes of the drying region D, the solidified material remaining region S, and the liquid remaining region L and the principle of enlarging the drying region D are the same as those of embodiment 1, and therefore, their descriptions (see fig. 6A to 7) are omitted.
According to embodiment 3, the same effects as those of embodiment 1 are exhibited.
In addition, according to embodiment 3, since the built-in heater 150 is built in the facing member 6 facing the upper surface of the substrate W, the liquid film 100 and the solidified material 101 held on the upper surface of the substrate W can be directly heated without interposing the substrate W. Therefore, the liquid film 100 and the solidified material 101 held on the upper surface of the substrate W can be heated more efficiently.
In the substrate processing according to embodiment 3, the liquid film 100 and the solidified material 101 may be heated by supplying a heat medium from the lower nozzle 13 to the lower surface of the substrate W, in addition to the built-in heater 150.
Embodiment 4
Fig. 12A is a schematic diagram for explaining a region coexistence state generation step performed by the substrate processing apparatus according to embodiment 4. Fig. 12B is a schematic diagram for explaining a drying region expansion process performed by the substrate processing apparatus 1 according to embodiment 4. In fig. 12A and 12B, the same reference numerals as those in fig. 1 and the like are given to the same components as those in fig. 1 to 11, and the description thereof is omitted.
The processing unit 2R of embodiment 4 is mainly different from the processing unit 2 (see fig. 2) of embodiment 1 in that a moving heater 120 movable at least in the horizontal direction is included. The moving heater 120 is, for example, an infrared heater.
The moving heater 120 includes an infrared lamp 121 that emits infrared rays, and a lamp housing 122 that accommodates the infrared lamp 121. The infrared lamp 121 is disposed in the lamp housing 122. The infrared lamp 121 includes, for example, a filament and a quartz tube accommodating the filament. The moving heater 120 is smaller than the upper surface of the substrate W in plan view.
The moving heater 120 is moved in the horizontal direction and the vertical direction by the heater moving unit 123. The moving heater 120 is movable between a center position and an initial position (retracted position). When the moving heater 120 is located at the center position, it faces the center portion of the upper surface of the substrate W, and heats the center portion of the upper surface of the substrate W.
When the moving heater 120 is positioned at the initial position, it is not opposed to the upper surface of the substrate W, and is positioned outside the processing cup 7 in a plan view. The moving heater 120 can approach the upper surface of the substrate W or retract upward from the upper surface of the substrate W by moving in the vertical direction.
The heater moving unit 123 includes, for example: an arm 123a supporting the moving heater 120 and extending horizontally; and an arm driving unit 123b driving the arm 123a. The arm driving unit 123b includes: a rotation shaft (not shown) coupled to the arm 123a and extending in the vertical direction; and a rotation shaft driving unit (not shown) for lifting or rotating the rotation shaft.
The rotation shaft driving unit swings the arm 123a by rotating the rotation shaft about a vertical rotation axis. Further, the rotation shaft driving unit moves the arm 123a up and down by lifting and lowering the rotation shaft in the vertical direction. The moving heater 120 moves in the horizontal direction and the vertical direction in response to the swing and the elevation of the arm 123a.
The controller 3 of embodiment 4 controls the heater moving unit 123 (see fig. 3) in addition to the object controlled by the controller 3 of embodiment 1.
In the substrate processing apparatus 1 according to embodiment 4, the same substrate processing as in the flowchart shown in fig. 4 can be performed. Specifically, the substrate processing of embodiment 4 is substantially the same as that of embodiment 1, except that the generation of the region coexistence state and the expansion of the drying region D in the pre-drying process liquid film removal step (step S6) are mainly performed by heating by the moving heater 120. Hereinafter, a step of removing a liquid film before drying in substrate processing according to embodiment 4 will be described.
As shown in fig. 12A, the heater moving unit 123 moves the moving heater 120 to the central position. By moving the moving heater 120 to the center position, the portion of the liquid film 100 of the pre-drying treatment liquid located at the center portion of the upper surface of the substrate W (the center portion of the liquid film 100) is heated by the radiant heat of the moving heater 120.
The substrate W is accelerated and rotated (spin-up process) almost simultaneously with the start of heating of the liquid film 100 by the moving heater 120. As in the substrate processing of embodiment 1, the rotation speed of the substrate W is changed from the liquid coating speed to the liquid film removal speed.
The central portion of the liquid film 100 of the pre-drying treatment liquid is heated to evaporate the solvent near the rotation center of the liquid film 100, thereby forming a solidified body 101. By continuing to heat the central portion of the liquid film 100, as shown in fig. 12A, the solidified material 101 sublimates to dry the upper surface of the substrate W, and the solvent around the dried portion of the upper surface of the substrate W evaporates to form a solidified material 101.
In this way, the region concurrent state is generated by heating the central portion of the liquid film 100 of the pre-drying treatment liquid by the moving heater 120 (region concurrent state generating step).
By the rotation of the substrate W at the liquid film removal speed, the liquid film 100 on the substrate W becomes thin. Therefore, the evaporation amount of the solvent required for forming the solidified body 101 and the sublimation amount of the solidified body 101 required for drying the upper surface of the substrate W are reduced. In addition, the liquid film 100 and the solidified body 101 are heated by the moving heater 120, so that the solvent evaporation and sublimation of the solidified body 101 are promoted.
After the region coexistence state is generated, the heating by the moving heater 120 is continued, and the substrate W is continued to be rotated at the liquid film removal speed. Accordingly, the drying region D is enlarged so that the solidified residual region S moves toward the upper surface of the substrate W while maintaining the region-side state (drying region enlarging step).
Specifically, as shown in fig. 12B, as the drying area D is enlarged, the heater moving means 123 moves the moving heater 120 toward the peripheral edge portion of the upper surface of the substrate W (heater moving step). For example, the moving heater 120 moves so as to face the solidification product remaining region S. Therefore, in the process of expanding the drying region D, the moving heater 120 heats the solidified material 101 in the solidified material remaining region S and the peripheral portion thereof, that is, the portion of the liquid film 100 in the liquid remaining region L, which is close to the solidified material remaining region S (heating step).
Since the substrate W is rotating, the moving heater 120 can heat the solidified material 101 in the solidified material remaining region S and the portion of the liquid film 100 in the liquid remaining region L near the solidified material remaining region S over the entire circumference in the rotation direction around the rotation axis A1. In embodiment 4, the moving heater 120 functions as a heating unit.
In embodiment 4, the drying area D is promoted to be enlarged by heating with the moving heater 120 to generate an area coexistence state. In addition, by rotating the substrate W by the rotation motor 23, the generation of the region coexistence state and the expansion of the drying region D are promoted. The moving heater 120 and the rotary motor 23 constitute a pretreatment liquid film removal unit.
The shapes of the drying region D, the solidified material remaining region S, and the liquid remaining region L, and the principle of enlarging the drying region D are the same as those of embodiment 1, and therefore, their descriptions (see fig. 6A to 7) are omitted.
According to embodiment 4, the same effects as those of embodiment 1 are exhibited.
In embodiment 4, the central portion of the liquid film 100 of the pre-drying treatment liquid is heated, whereby the drying region D and the solidified material remaining region S are formed in the central portion of the liquid film 100. That is, the central portion of the liquid film 100 of the pre-drying treatment liquid is heated, thereby generating a region-concurrent state. In the region concurrent state generation step, the substrate W is accelerated and rotated almost simultaneously with the start of heating the central portion of the liquid film 100.
Therefore, immediately before the central portion of the liquid film 100 is heated, the liquid film 100 can be maintained in a sufficiently thick state. Therefore, the entire upper surface of the substrate W can be reliably covered with the liquid film 100 of the pre-drying treatment liquid. On the other hand, after the central portion of the liquid film 100 is heated, the centrifugal force acting on the liquid film 100 increases, and therefore the liquid film 100 of the pre-drying treatment liquid becomes thin. Therefore, the amount of solvent evaporated to form the solidified body 101 is reduced, so that the solidified body 101 can be formed quickly. Further, by thinning the liquid film 100 of the pre-drying treatment liquid, the solidified material 101 formed from the liquid film 100 is thinned. Therefore, in the drying region expansion step, the solidified material 101 can be sublimated rapidly. Thereby, the drying area D can be rapidly enlarged. Accordingly, the time for which the stress caused by the solidified material 101 acts on the structure 161 (see fig. 7) of the pattern 160 on the upper surface of the substrate W can be further shortened.
In addition, according to embodiment 4, as the drying region D is enlarged, the moving heater 120 moves toward the peripheral edge portion of the upper surface of the substrate W. Therefore, the moving heater 120 can be maintained at a position closer to the solidified residual area S than the central portion of the upper surface of the substrate W during the movement of the solidified residual area S toward the peripheral portion of the upper surface of the substrate W by the expansion of the drying area D. Therefore, the solidified material 101 can be efficiently heated during the expansion of the drying area D. Thereby, sublimation of the solidified material 101 in the solidified material remaining region S can be further promoted. Further, the solvent can be further promoted to evaporate from the drying pretreatment liquid present in the portion of the liquid film 100 in the liquid remaining region L near the solidification remaining region S, thereby further promoting the formation of the solidified body 101. Therefore, the drying area D can be further promoted to be enlarged.
In the substrate processing of embodiment 4, the drying region D is promoted to be enlarged by heating by the moving heater 120 and rotating the substrate W. However, the gas may be supplied from at least one of the center nozzle 12 and the gas flow path 65 (gas supply means, see fig. 2) to the upper surface of the substrate W during the expansion of the drying region D (gas supply step). This further promotes the expansion of the drying area D.
In the substrate processing according to embodiment 4, the liquid film 100 and the solidified body 101 may be heated by supplying a heat medium from the lower nozzle 13 (heating means, see fig. 2) to the lower surface of the substrate W, in addition to the moving heater 120 (heating step).
Embodiment 5
Fig. 13A is a schematic diagram for explaining a region coexistence state generation step performed by the substrate processing apparatus 1 according to embodiment 5. Fig. 13B is a schematic view for explaining a drying region expansion process performed by the substrate processing apparatus according to embodiment 5. In fig. 13A and 13B, the same reference numerals as those in fig. 1 and the like are given to the same components as those in fig. 1 to 12B, and the description thereof is omitted.
The processing unit 2S of embodiment 5 is mainly different from the processing unit 2 (see fig. 2) of embodiment 1 in that it includes a movable gas nozzle 14 that is movable at least in the horizontal direction and that can eject gas toward the upper surface of the substrate W.
The moving gas nozzle 14 is moved in the horizontal direction and the vertical direction by the gas nozzle moving unit 39. The movable gas nozzle 14 is movable between a center position and an initial position (retracted position).
The moving gas nozzle 14 is located at a center position so as to face the rotation center of the upper surface of the substrate W. When the movable gas nozzle 14 is positioned at the initial position, it is positioned outside the processing cup 7 in a plan view without being opposed to the upper surface of the substrate W. The movable gas nozzle 14 can approach the upper surface of the substrate W or retract upward from the upper surface of the substrate W by moving in the vertical direction.
The gas nozzle moving unit 39 includes, for example, an arm 39a that supports and moves the gas nozzle 14 and extends horizontally, and an arm driving unit 39b that drives the arm 39 a. The arm driving unit 39b includes: a rotation shaft (not shown) coupled to the arm 39a and extending in the vertical direction; and a rotation shaft driving unit (not shown) for lifting or rotating the rotation shaft.
The rotation shaft driving unit swings the arm 39a by rotating the rotation shaft about a vertical rotation axis. Further, the rotation shaft driving unit moves the arm 39a up and down by lifting and lowering the rotation shaft in the vertical direction. The movable gas nozzle 14 moves in the horizontal direction and the vertical direction in response to the swing and the elevation of the arm 39 a.
The movable gas nozzle 14 is connected to a movable gas pipe 47 that guides gas to the movable gas nozzle 14. When the movable gas valve 57 interposed in the movable gas pipe 47 is opened, gas is continuously discharged downward from the discharge port of the movable gas nozzle 14.
The gas ejected from the movable gas nozzle 14 is, for example, nitrogen (N) 2 ) And inert gases. The gas ejected from the moving gas nozzle 14 may be air.
The controller 3 according to embodiment 5 controls the moving gas valve 57 and the gas nozzle moving means 39 (see fig. 3) in addition to the object controlled by the controller 3 according to embodiment 1.
In the substrate processing apparatus 1 according to embodiment 5, the same substrate processing as in the flowchart shown in fig. 4 can be performed. Specifically, the substrate processing of embodiment 5 is substantially the same as that of embodiment 1, except that the formation of the drying region D and the solidified material remaining region S and the expansion of the drying region D in the pre-drying treatment liquid film removing step (step S6) are mainly performed by blowing gas from the moving gas nozzle 14. Hereinafter, a step of removing a liquid film before drying in substrate processing according to embodiment 5 will be described.
As shown in fig. 13A, the gas nozzle moving unit 39 moves the moving gas nozzle 14 to the center position. The moving gas valve 57 is opened in a state where the moving gas nozzle 14 is located at the center position. Thereby, the gas is ejected from the ejection port of the movable gas nozzle 14 toward the upper surface of the substrate W (gas ejection step). The gas ejected from the movable gas nozzle 14 is blown to the central portion of the upper surface of the substrate W, and a region coexistence state is generated.
The substrate W is accelerated and rotated (substrate rotation step, spin-acceleration step) almost simultaneously with the start of the supply of the gas from the moving gas nozzle 14 to the substrate W. The rotation speed of the substrate W is changed from the predetermined liquid coating speed to the predetermined liquid film removal speed.
The heat medium valve 56 is opened at approximately the same timing as the timing of opening the moving gas valve 57. Thus, the ejection of the heat medium from the lower surface nozzle 13 is started at substantially the same time as the ejection of the gas from the moving gas nozzle 14 is started. The liquid film 100 on the substrate W is heated through the substrate W by supplying a heat medium from the lower surface nozzle 13 to the lower surface of the substrate W. Thereby, the generation of the region coexistence state is promoted.
Then, as shown in fig. 13B, as the drying region D expands, the gas nozzle moving unit 39 moves the moving gas nozzle 14 toward the peripheral edge portion of the upper surface of the substrate W (nozzle moving step). For example, the movable gas nozzle 14 is moved so that the ejection port of the movable gas nozzle 14 faces the solidified material remaining region S. Therefore, during the expansion of the drying region D, the gas ejected from the ejection port of the moving gas nozzle 14 is supplied to the solidified material 101 in the solidified material remaining region S. The gas discharged from the discharge port of the movable gas nozzle 14 is also directly or indirectly supplied to the peripheral portion of the solidified material remaining region S, that is, the portion of the liquid film 100 in the liquid remaining region L near the solidified material remaining region S (gas supply step).
Since the substrate W is rotating, the moving gas nozzle 14 can blow gas to the solidified material 101 in the solidified material remaining region S and the portion of the liquid film 100 in the liquid remaining region L near the solidified material remaining region S over the entire circumference in the rotation direction around the rotation axis A1. Therefore, the movable gas nozzle 14 functions as a gas supply unit.
During the expansion of the drying region D, the supply of the heat medium from the lower surface nozzle 13 to the lower surface of the substrate W is continued. Therefore, the portion of the solidified material 101 in the solidified material remaining region S and the portion of the liquid film 100 in the liquid remaining region L, which is close to the solidified material remaining region S, are heated (heating step). The lower surface nozzle 13 functions as a heating unit.
In embodiment 5, the drying region D is promoted to be enlarged by supplying gas from the movable gas nozzle 14 to the substrate W to generate a region-concurrent state. In addition, by supplying the heat medium from the lower nozzle 13 to the substrate W and rotating the substrate W by the rotation motor 23, the generation of the region coexistence state and the expansion of the drying region D are promoted. Therefore, the moving gas nozzle 14, the rotary motor 23, and the lower surface nozzle 13 constitute a pretreatment liquid film removal unit.
Using a pre-drying treatment liquid containing camphor as a solute (sublimation substance) at a mass percentage concentration of 0.62wt% or more and 2.06wt% or less and containing IPA as a solvent, the solidified body 101 is sublimated after forming the solidified body 101 on the entire upper surface of the substrate W, and in this case, the collapse rate of the structural body 161 of the pattern 160 is 83% or less. Further, using a pre-drying treatment liquid containing camphor as a solute at a mass percentage concentration of 1.04wt% or more and 1.25wt% or less and IPA as a solvent, the solidified body 101 is sublimated after forming the solidified body 101 on the entire upper surface of the substrate W, and in this case, the collapse rate of the structure body 161 of the pattern 160 is 20% or less.
Therefore, it is preferable that the moving gas nozzle 14 be started to move at a point when the mass percentage concentration of camphor in the treatment liquid before drying becomes 0.62wt% or more and 2.06wt% or less after starting to supply the gas toward the center of the substrate W. In this way, the collapse rate of the structure 161 of the pattern 160 can be reduced. More preferably, the moving gas nozzle 14 is started to move at the point when the mass percentage concentration of camphor in the treatment liquid before drying is 1.04wt% or more and 1.25wt% or less. Thus, the collapse rate of the pattern 160 can be further reduced.
The shapes of the drying region D, the solidified material remaining region S, and the liquid remaining region L, and the principle of enlarging the drying region D are the same as those of embodiment 1, and therefore, their descriptions (see fig. 6A to 7) are omitted.
According to embodiment 5, the same effects as those of embodiment 1 are exhibited.
In addition, according to embodiment 5, as the drying region D expands, the moving gas nozzle 14 moves toward the peripheral edge portion of the upper surface of the substrate W. Therefore, the movable gas nozzle 14 can be maintained at a position close to the solidified residual area S while the solidified residual area S is moved toward the peripheral edge portion of the upper surface of the substrate W by the expansion of the drying area D. Therefore, the gas can be efficiently supplied to the solidified material remaining area S during the expansion of the drying area D. Therefore, sublimation of the solidified body 101 in the solidified body remaining region S can be further promoted. Further, the solvent can be further promoted to evaporate from the portion of the liquid film 100 in the liquid remaining region L near the solidification remaining region S, thereby further promoting the formation of the solidified body 101. This can further promote the expansion of the drying area D. Accordingly, the time for which the stress caused by the solidified material 101 acts on the structure 161 (see fig. 7) of the pattern 160 on the upper surface of the substrate W can be further shortened.
In the substrate processing according to embodiment 5, the drying region D is promoted to be enlarged by supplying gas from the moving gas nozzle 14, rotating the substrate W, and supplying a heat medium from the lower surface nozzle 13 to the lower surface of the substrate W. However, the gas may be supplied from at least one of the center nozzle 12 and the gas flow path 65 (see fig. 2) to the upper surface of the substrate W during the expansion of the drying region D. This further promotes the expansion of the drying area D.
In the substrate processing according to embodiment 5, the drying region D is enlarged by generating the region coexistence state by the gas discharged from the moving gas nozzle 14. However, the gas generation regions ejected from at least one of the central nozzle 12 and the gas flow path 65 may coexist.
The present invention is not limited to the above-described embodiments, and may be implemented in other modes.
For example, in the above embodiment, the chemical liquid nozzle 8, the rinse liquid nozzle 9, the pretreatment liquid nozzle 10, and the replacement liquid nozzle 11 are moving nozzles. However, the chemical liquid nozzle 8, the rinse liquid nozzle 9, the pre-drying treatment liquid nozzle 10, and the replacement liquid nozzle 11 may be fixed nozzles whose positions in the horizontal direction and the vertical direction are fixed. Further, at least one of the chemical liquid, the rinse liquid, the pretreatment liquid for drying, and the replacement liquid may be discharged from the central nozzle 12.
For example, the gas ejected from the central nozzle 12, the gas flow path 65, and the moving gas nozzle 14 may be a high-temperature inert gas or a high-temperature gas such as high-temperature air. Thus, the solvent evaporation or sublimation of the solidified material 101 can be promoted.
In the above embodiments, the rotation of the substrate W is decelerated to a predetermined liquid coating speed at substantially the same time as the ejection of the pre-drying treatment liquid is stopped. However, the gas may be supplied to the center portion of the upper surface of the substrate W without decelerating the rotation of the substrate W after the discharge of the treatment liquid before drying, and a region coexistence state may be generated. Thus, the time required for removing the liquid film 100 of the dry processing liquid from the upper surface of the substrate W can be shortened.
In the above embodiments, an imaging unit such as a camera for observing the upper surface of the substrate W may be provided in the substrate processing apparatus 1. The flow rate of the gas supplied to the upper surface of the substrate W, the moving speed of the moving gas nozzle 14 or the moving heater 120 may be feedback-controlled based on the results obtained by observing the formation of the solidified body 101 and the time of sublimation using the imaging means.
While the embodiments of the present invention have been described in detail, these are merely specific examples for clarifying the technical content of the present invention, and the present invention should not be construed as limited to these specific examples, but the scope of the present invention is limited only by the appended claims.
This application corresponds to Japanese patent application No. 2018-163869 filed by the Japanese patent office on month 8 and 31, the entire disclosure of which is incorporated herein by reference.
[ description of symbols ]
1. Substrate processing apparatus
12. Central nozzle (gas supply unit, drying pretreatment liquid film removing unit)
13. Lower surface nozzle (heating unit, drying pretreatment liquid film removing unit)
14. Mobile gas nozzle (gas supply unit, drying pretreatment liquid film removing unit)
23. Rotary motor (substrate rotary unit, drying pretreatment liquid film removing unit)
65. Gas flow path (gas supply unit, drying pretreatment liquid film removing unit)
100. Liquid film (liquid film of drying pretreatment liquid)
101. Solidifying body
120. Mobile heater (heating unit, drying pretreatment liquid film removing unit)
130. Heater unit (heating unit, drying pretreatment liquid film removing unit)
150. Built-in heater (heating unit, drying pretreatment liquid film removing unit)
160. Pattern and method for producing the same
A1 Rotation axis (vertical axis)
D drying zone
L liquid remaining area
S coagulum remaining region
A W substrate.
Claims (14)
1. A substrate processing method, comprising:
A pre-drying treatment liquid film forming step of forming a liquid film of a pre-drying treatment liquid on a surface of a substrate on which a pattern is formed by supplying the pre-drying treatment liquid to the surface of the substrate, the pre-drying treatment liquid being a solution containing a sublimate which changes from a solid to a gas without passing through the liquid and a solvent which dissolves the sublimate; and
a drying pretreatment liquid film removal step of removing the liquid film from the substrate surface by evaporating the solvent from the liquid film to form a solidified material containing the sublimating substance on the substrate surface and sublimating the solidified material; and is also provided with
The step of removing the liquid film of the pretreatment before drying comprises the steps of: a region-concomitant state generating step of generating a region-concomitant state in which a dried region in which the solidified material sublimates to dry the substrate surface, a solidified material remaining region in which the solidified material remains, and a liquid remaining region in which the liquid film remains are arranged in this order from a central portion of the substrate surface toward a peripheral portion of the substrate surface; and a drying region expanding step of expanding the drying region so that the solidified material remaining region moves toward the peripheral edge portion of the substrate surface while maintaining the region-side state.
2. The substrate processing method according to claim 1, wherein the dry region enlarging step includes a step of enlarging the dry region so that the solidified residual region moves toward a peripheral edge portion of the substrate surface while maintaining the solidified residual region in a ring shape surrounding the dry region in a plan view.
3. The substrate processing method according to claim 1 or 2, further comprising a gas supply step of supplying gas to the solidification body of the solidification body residual region and the pre-drying treatment liquid in a portion of the liquid residual region near the solidification body residual region during the drying region expanding step.
4. The substrate processing method according to claim 3, wherein the gas supply step comprises: a gas ejection step of ejecting a gas from a nozzle toward the surface of the substrate; and a nozzle moving step of moving the nozzle toward the peripheral edge of the substrate surface as the drying area is enlarged.
5. The substrate processing method according to claim 1 or 2, further comprising a heating step of heating the solidification body of the solidification body remaining region and the pre-drying treatment liquid in a portion of the liquid remaining region near the solidification body remaining region in the drying region expanding step.
6. The substrate processing method according to claim 5, wherein the heating step includes a heater moving step of moving a heater toward a peripheral edge portion of the substrate surface as the drying region is enlarged.
7. The substrate processing method according to claim 1 or 2, further comprising a substrate rotation step of rotating the substrate about a vertical axis passing through a central portion of the substrate surface in parallel with the pre-drying treatment liquid film forming step and the pre-drying treatment liquid film removing step, and
the substrate rotation step includes a spin acceleration step of accelerating the rotation of the substrate while starting the pre-drying treatment liquid film removal step.
8. The substrate processing method according to claim 7, wherein the region coexistence state generating step includes a step of forming the dry region and the solidified material remaining region in a central portion of the liquid film by blowing gas toward the central portion of the substrate surface, and
the spin-up process includes a process of starting the blowing of the gas in the region coexistence state generation process and simultaneously accelerating the rotation of the substrate.
9. The substrate processing method according to claim 7, wherein the region coexistence state generating step includes a step of heating a central portion of the liquid film to form the dry region and the solidified residual region in the central portion of the liquid film, and
the spin-up step includes a step of starting heating the central portion of the liquid film in the region coexistence state generation step and simultaneously accelerating the rotation of the substrate.
10. The substrate processing method according to claim 1 or 2, further comprising:
a rinse liquid supply step of supplying a rinse liquid to the surface of the substrate; and
a replacement step of supplying a replacement liquid compatible with the two liquids, i.e., the rinse liquid and the pre-drying treatment liquid, to the substrate surface, thereby replacing the rinse liquid on the substrate surface with the replacement liquid; and is also provided with
The step of forming a liquid film of the pretreatment liquid before drying includes a step of supplying the pretreatment liquid before drying to the surface of the substrate after replacing the rinse liquid with the replacement liquid.
11. A substrate processing apparatus comprising:
a pre-drying treatment liquid film forming unit that forms a liquid film of a pre-drying treatment liquid that covers a surface of a substrate by supplying the pre-drying treatment liquid to the surface of the substrate on which a pattern is formed, the pre-drying treatment liquid being a solution containing a sublimating substance that changes from a solid to a gas without passing through the liquid and a solvent that dissolves the sublimating substance; and
A drying pretreatment liquid film removing unit that removes the liquid film from the substrate surface by evaporating the solvent from the liquid film to form a solidified material containing the sublimating substance on the substrate surface and sublimating the solidified material; and is also provided with
A state in which a region-concomitant state is generated by the pre-drying treatment liquid film removal means, the region-concomitant state being a state in which a drying region in which the solidified material sublimates to dry the substrate surface, a solidified material remaining region in which the solidified material remains, and a liquid remaining region in which the liquid film remains are sequentially arranged from a central portion of the substrate surface toward a peripheral portion of the substrate surface; the drying region is enlarged so that the solidified material remaining region moves toward the peripheral edge portion of the substrate surface while maintaining the region-side state.
12. The substrate processing apparatus according to claim 11, wherein the pre-drying treatment liquid film removing means includes a gas supply means for supplying a gas to the solidification body in the solidification body residual region and the pre-drying treatment liquid in a portion of the liquid residual region near the solidification body residual region during the expansion of the drying region.
13. The substrate processing apparatus according to claim 11 or 12, wherein the pre-drying treatment liquid film removing unit includes a substrate rotating unit that rotates the substrate around a vertical axis passing through a central portion of the substrate surface during the drying region expanding.
14. The substrate processing apparatus according to claim 11 or 12, wherein the pre-drying treatment liquid film removing means includes heating means for heating the solidification body of the solidification body remaining region and the pre-drying treatment liquid in a portion of the liquid remaining region near the solidification body remaining region during the expansion of the drying region.
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| JP2018163869A JP7122911B2 (en) | 2018-08-31 | 2018-08-31 | Substrate processing method and substrate processing apparatus |
| JP2018-163869 | 2018-08-31 | ||
| PCT/JP2019/029073 WO2020044885A1 (en) | 2018-08-31 | 2019-07-24 | Substrate processing method and substrate processing device |
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| US20230151163A1 (en) * | 2020-03-17 | 2023-05-18 | Central Glass Company, Limited | Sublimable film formation composition and method for producing substrate |
| JP7446181B2 (en) | 2020-08-20 | 2024-03-08 | 株式会社Ｓｃｒｅｅｎホールディングス | Substrate processing method and substrate processing apparatus |
| CN117329786A (en) * | 2022-06-27 | 2024-01-02 | 长鑫存储技术有限公司 | Substrate processing apparatus and method |
| JP2024060140A (en) * | 2022-10-19 | 2024-05-02 | 株式会社Ｓｃｒｅｅｎホールディングス | Substrate processing method and substrate processing device |
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| JP2020035986A (en) | 2020-03-05 |
| KR20210046770A (en) | 2021-04-28 |
| TW202015118A (en) | 2020-04-16 |
| CN112640057A (en) | 2021-04-09 |
| JP7122911B2 (en) | 2022-08-22 |
| TWI728414B (en) | 2021-05-21 |
| KR102476555B1 (en) | 2022-12-12 |
| WO2020044885A1 (en) | 2020-03-05 |
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