JP2017050575A - Substrate drying method and substrate processing apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To prevent pattern collapse when a substrate having a pattern of protrusions and recesses formed on the surface is dried by removing a liquid on the substrate.SOLUTION: A substrate drying method by drying a substrate having a pattern of protrusions and recesses formed on the surface by removing a liquid on the substrate includes a sublimable substance filling step for filling the recesses of the pattern with a solution (SL) of a sublimable substance by supplying the solution to the substrate, a solvent drying step for filling the recesses of the pattern with the sublimable substance (SS) in a solid state by drying the solvent in the solution, and a sublimable substance removal step for removing the sublimable substance from the substrate by heating the substrate to a temperature higher than the sublimation temperature of the sublimable substance.SELECTED DRAWING: Figure 5

Description

  The present invention relates to a substrate drying method and a substrate processing apparatus.

  In recent years, the pattern aspect ratio (height / width) has been increased with the miniaturization of patterns formed on a substrate such as a semiconductor wafer. When the aspect ratio is larger than a certain value, pattern collapse (collapse of convex portions constituting the pattern) is likely to occur during the drying process performed after the liquid process during semiconductor formation on the substrate. Pattern collapse occurs because the columnar portion of the pattern cannot withstand the stress caused by the surface tension of the liquid when the liquid escapes from the concave portion of the pattern during drying.

  In order to solve the above problems, a solvent that reduces the surface tension of the liquid on the substrate surface after the liquid treatment is added to the liquid, or the liquid is replaced with IPA (isopropyl alcohol). If the ratio is further increased and the pattern intensity is further decreased, this method cannot cope with it. For this reason, a method for preventing the surface tension from acting on the pattern itself has been proposed, and an example thereof is described in Patent Document 1.

  In the method described in Patent Document 1, first, a developer is supplied to the exposed photoresist film to dissolve the photoresist film to form a pattern. At the end of the cleaning process, ie, the rinsing process, in which the rinsing liquid is supplied to the substrate to remove the developer, a polymer soluble in the rinsing liquid is supplied to the substrate with the rinsing liquid covering the substrate surface, and then the polymer solution is added. dry. As a result, the concave portions of the pattern (the gaps between the convex portions made of the photoresist film) are filled with the polymer. Thereafter, the photoresist film or polymer is removed by selective plasma ashing. When removing the photoresist film, a mask is formed from the polymer, and when removing the polymer, the mask is formed from the photoresist film. According to the above method, the surface tension does not act on the pattern, and the pattern collapse can be prevented.

  However, since the method described in Patent Document 1 uses plasma ashing when removing the photoresist film or polymer, the photoresist film or polymer removed by ashing may adhere to the substrate.

JP 2007-19161 A

  The present invention provides a substrate drying technique capable of preventing pattern collapse without requiring a plasma processing apparatus.

  According to a first aspect of the present invention, in a method of removing a liquid on a substrate having an uneven pattern formed on a surface and drying the substrate, a solution of a sublimable substance is supplied to the substrate, and the pattern A sublimation substance filling step of filling the concave portion with the solution, a solvent drying step of drying the solvent in the solution and filling the concave portion of the pattern with the sublimation substance in a solid state, and the substrate. There is provided a substrate drying method comprising: a sublimable substance removing step of removing the sublimable substance from the substrate by heating to a temperature higher than the sublimation temperature of the sublimable substance.

  According to a second aspect of the present invention, a liquid supply means for supplying a liquid to the substrate, a sublimable substance solution supply means for supplying a solution of a sublimable substance to the substrate, and the sublimable substance attached to the substrate. There is provided a substrate processing apparatus comprising: a solvent drying means for drying the solvent in the solution; and a heating means for heating the substrate to a temperature higher than the sublimation temperature of the sublimable substance.

  According to the present invention, the stress that tries to collapse the convex portion of the pattern that can be caused by the surface tension of the liquid on the substrate does not act on the convex portion of the pattern, thereby preventing the pattern collapse. can do.

The schematic plan view which shows the whole structure of the substrate processing apparatus for enforcing a substrate drying method. Schematic which shows the structure of the liquid processing unit as a 1st processing unit provided in the substrate processing apparatus of FIG. Schematic plan view of the liquid processing unit of FIG. Schematic which shows the structure of the hotplate unit as a 2nd processing unit provided in the substrate processing apparatus of FIG. Schematic explaining the structure of the single processing unit which can perform a series of processes of a substrate drying method. Schematic for demonstrating the process of a board | substrate drying method.

  Next, embodiments will be described with reference to the accompanying drawings. First, a substrate processing apparatus for carrying out a method for drying a substrate after liquid processing (hereinafter referred to as “substrate drying method”) will be described. The substrate drying method is preferably implemented as a series of processes in combination with the previous step. Here, a substrate drying method implemented as a series of processes in combination with a chemical solution cleaning process and a rinsing process as the previous process will be described.

  As shown in FIG. 1, the substrate processing apparatus is a cleaning processing apparatus including a substrate carry-in / out unit 1 and a liquid processing unit 2. The substrate carry-in / out unit 1 includes a carrier mounting unit 3, a transport unit 4, and a delivery unit 5. A carrier C containing a plurality of substrates is placed on the carrier placing unit 3, and a transport mechanism 4 a provided in the transport unit 4 unloads the substrate from the carrier C and transports it to a delivery unit 5 a provided in the delivery unit 5. To do. The liquid processing unit 2 includes a plurality of liquid processing units 10 for performing a cleaning process on the substrate, a plurality of hot plate units 60 for heating and processing the substrate, and a substrate transport mechanism 6. The substrate transport mechanism 6 can access the delivery unit 5 a, the liquid processing unit 10, and the hot plate unit 60, and carries in and out the substrates with respect to each liquid processing unit 10 and each hot plate unit 60.

  Next, the configuration of the liquid processing unit 10 will be described with reference to FIG. The liquid processing unit 10 includes a spin chuck 11 that rotates while holding a substrate, in this example, a semiconductor wafer W substantially horizontally. The spin chuck 11 includes a substrate holding unit 14 that holds the substrate in a horizontal posture by a plurality of holding members 12 that hold the peripheral edge of the wafer W, and a rotation driving unit 16 that rotationally drives the substrate holding unit 14. Yes. Around the substrate holding unit 14, a cup 18 is provided for receiving various processing liquids such as a chemical liquid, a rinse liquid, and a sublimable substance solution described later. The substrate holding unit 14 and the cup 18 are relatively movable in the vertical direction so that the wafer W can be transferred between the substrate transfer mechanism 6 and the substrate holding unit 14 described above.

The liquid processing unit 10 includes a chemical nozzle 20 for supplying chemical liquid (CHM) to the wafer W, a rinse nozzle 22 for supplying pure water (DIW) to the wafer W, and N ₂ for supplying N ₂ gas to the wafer W. And a gas nozzle 24. The chemical liquid is supplied to the chemical liquid nozzle 20 from a chemical liquid supply source through a chemical liquid conduit 20c provided with an appropriate flow rate regulator, for example, a flow rate adjusting valve 20a and an on-off valve 20b. DIW is supplied to the rinse nozzle 22 from a DIW supply source through a DIW pipe line 22c in which an appropriate flow rate regulator, for example, a flow rate regulating valve 22a and an on-off valve 22b are interposed. The N ₂ gas nozzle 24, _{N 2} gas is supplied through the _{N 2} gas supply source, a suitable flow regulator for example flow regulating valve 24a and the on-off valve 24b and is interposed by _{N 2} gas pipe 24c .

  Further, the liquid processing unit 10 has a sublimable substance solution nozzle 30 for supplying a solution of the sublimable substance to the wafer W. The sublimation substance solution nozzle 30 is connected to a sublimation substance solution pipe 30c from a tank 31 serving as a sublimation substance solution supply source through an appropriate flow regulator, for example, a flow adjustment valve 30a and an on-off valve 30b. Then, a sublimable substance solution is supplied. A circulation pipe 32 provided with a pump 34 is connected to a tank 31 for storing a sublimable substance solution. The degree of saturation of the sublimable substance solution is preferably set to such a value that the sublimable substance does not precipitate before being supplied to the wafer W and that the precipitation occurs promptly after the start of the drying step. The temperature of the sublimable substance solution supplied from the sublimable substance solution nozzle 30 to the wafer W can be set to a temperature not higher than normal temperature, for example, in the range of 10 degrees to normal temperature. In this case, for example, a cooling device for cooling the solution can be provided in the circulation line 32. By lowering the temperature of the solution, a highly saturated solution can be supplied even if the concentration of the sublimable substance is low (even if the sublimable substance to be dissolved is small). In addition, when the wafer W is cooled in the previous process (for example, room temperature DIW rinse), it is possible to prevent the deposition from starting at the moment when the sublimable material touches the wafer, that is, the deposition start at an undesired timing. Process control becomes easy.

  However, if it is desired to supply a solution of a sublimable substance having a high concentration, a heater may be provided in the circulation line 32 to maintain the solution of the sublimable substance at a relatively high temperature. In this case, it is preferable to provide a heater such as a tape heater or a heat insulating material in the sublimable substance solution conduit 30c in order to prevent precipitation of the sublimable substance before supply.

In the present embodiment, the sublimable substance solution is obtained by dissolving ammonium silicofluoride ((NH ₄ ) ₂ SiF ₆ ) as a sublimable substance (solute) in pure water (DIW) as a solvent. The solvent can be a mixed liquid of DIW and IPA (isopropyl alcohol).

  Further, the solution of the sublimable substance may be obtained by dissolving camphor or naphthalene as the sublimable substance (solute) in alcohols such as IPA as a solvent.

As shown in FIG. 3, the chemical nozzle 20, the rinse nozzle 22, the N ₂ gas nozzle 24 and the sublimable substance solution nozzle 30 are driven by a nozzle moving mechanism 50. The nozzle moving mechanism 50 includes a guide rail 51, a moving body 52 with a built-in driving mechanism that can move along the guide rail 51, and a base end of the nozzle moving mechanism 50 attached to the moving body 52. , 24, 30 and a nozzle arm 53 for holding. The nozzle moving mechanism 50 moves the nozzles 20, 22, 24, and 30 between a position just above the center of the wafer W held by the substrate holder 14 and a position just above the periphery of the wafer W. Furthermore, it can be moved to a standby position outside the cup 18 in plan view.

  The illustrated substrate holding portion 14 of the spin chuck 11 is of a so-called mechanical chuck type in which the peripheral portion of the wafer W is held by the movable holding member 12, but is not limited to this. A so-called vacuum chuck type that vacuum-sucks the center of the back surface of W may be used. The illustrated nozzle moving mechanism 50 is a so-called linear motion type that translates the nozzle, but is a so-called swing arm type in which the nozzle is held at the tip of an arm that rotates about a vertical axis. It may be. In the illustrated example, the four nozzles 20, 22, 24, and 30 are held by a common arm. However, they may be held by separate arms and moved independently.

  Next, the hot plate unit 60 will be described with reference to FIG. The hot plate unit 60 includes a hot plate 61 in which a resistance heater 62 is incorporated, and a plurality of holding pins 63 protruding from the upper surface of the hot plate 61. The holding pins 63 support the peripheral edge of the lower surface of the wafer W, and a small gap is formed between the lower surface of the wafer W and the upper surface of the hot plate 61. An exhaust hood (cover) 64 that can be moved up and down is provided above the hot plate 61. An exhaust pipe 65 in which a sublimable substance recovery device 66 and a pump 67 are interposed is connected to an opening provided at the center of the exhaust hood 64. In order to prevent the sublimation substance from adhering to the exhaust pipe 65 and the exhaust hood 64 on the upstream side of the sublimation substance recovery device 66, the surfaces of the exhaust pipe 65 and the exhaust hood 64 are separated from the sublimation temperature of the sublimation substance. It is preferable to provide a heater that maintains a high temperature. As the sublimation substance recovery device 66, a sublimation substance is deposited on a cooling plate provided in a chamber through which exhaust flows, or a sublimation substance gas is cooled in the chamber through which exhaust flows. Various known sublimable substance recovery devices, such as those that come into contact with each other, can be used.

  Next, a liquid processing step (here, a chemical solution cleaning step and a rinsing step) executed by the substrate processing apparatus including the liquid processing unit 10 and the hot plate unit 60 described above, and a substrate drying method executed subsequently thereto A series of processing steps including each step will be described.

  A wafer W subjected to dry etching to give a pattern to a film forming a semiconductor device, for example, a SiN film, is carried into the liquid processing unit 10 by the substrate transport mechanism 6 and held horizontally by the spin chuck 11.

  The wafer W is rotated at a predetermined speed, the chemical nozzle 20 is positioned above the center of the wafer W, the chemical liquid is discharged from the chemical nozzle 20 onto the wafer W, and etching residues and particles are removed from the substrate surface by the chemical liquid. A chemical cleaning process is performed (chemical cleaning process). In this chemical solution cleaning step, DHF, BHF, SC-1, SC-2, APM, HPM, SPM and the like can be used as the chemical solution.

Next, while the wafer W is continuously rotated, the rinse nozzle 22 is positioned above the center of the wafer W, DIW is discharged from the rinse nozzle 22 to the wafer W, and chemicals and etching residues and particles on the wafer W are discharged. Is removed (rinse step). This state is shown in FIG. If a drying process such as spin drying is performed as it is, the pattern collapse (collapse of the convex portion 101 of the pattern) may occur as described in the background section.
After this rinsing step, a series of steps of the substrate drying method is performed.

  Therefore, the sublimable substance solution nozzle 30 is positioned above the center of the wafer W while the wafer W is continuously rotated, and the sublimable substance solution is discharged from the sublimable substance solution nozzle 30 onto the wafer W. Then, the DIW on the wafer W is replaced with a sublimation substance solution (SL), and the sublimation substance solution is filled between patterns (sublimation substance filling step). This state is shown in FIG. After the DIW is replaced with the sublimation substance solution and the sublimation substance solution is filled between the patterns, the film thickness of the sublimation substance solution is adjusted by adjusting the rotation of the wafer W. Since the solvent is dried from the solution of the sublimable substance in the solvent drying step described later, the film thickness of the sublimable substance film (solid film) obtained is thinner than the film thickness of the sublimable substance solution. Considering this point, the film thickness of the sublimable substance solution is adjusted so that a sublimable substance film (solid film) having a desired film thickness is finally obtained. If the upper end of the convex portion 101 of the pattern is not sufficiently immersed in DIW during the transition from the rinsing step to the sublimation substance filling step, the surface tension of DIW acts on the convex portion 101 and the convex shape The part 101 may fall down. Therefore, (a) the DIW discharge amount is increased at the end of the rinsing process, (b) the rotation speed of the wafer W is reduced or stopped at the end of the rinsing process and the initial stage of the sublimation substance filling process. It is preferable to perform operations such as (c) overlapping the final stage of the rinsing process and the initial stage of the sublimation substance filling process (continuing to discharge DIW until the initial stage of the sublimation substance filling process). When the final stage of the rinsing process and the initial stage of the sublimation substance filling process are overlapped, the nozzle arm 53 is moved while discharging the rinse liquid from the rinse nozzle 22, and the sublimation substance solution nozzle 30 is moved to the center of the wafer W. Position it above. Then, after the sublimable substance solution starts to be discharged onto the wafer W, the discharge of the rinse liquid is stopped.

Next to the sublimation substance filling step, the solvent of the sublimation substance is dried to precipitate the sublimation substance, thereby forming a film made of a solid sublimation substance (solvent drying step). The state at the end of the solvent drying step is shown in FIG. 6C, and the recess 102 is filled with a solid state sublimable substance (SS). The film thickness “t” of the film made of a sublimable substance is preferably as thin as possible as long as it sufficiently covers the convex portion 101 of the pattern. Since the surface tension acts on the convex portions 101 of the pattern even when the solvent dries, it is sufficient that a film made of a solid sublimable substance is formed between the patterns to such an extent that the pattern does not collapse due to the surface tension. . In addition, the film thickness “t” of the film made of the sublimable substance to be formed is preferably uniform. The solvent drying step can be performed by various methods. When the illustrated liquid processing unit 10 is used, N ₂ gas is supplied from the N ₂ gas nozzle while rotating the wafer W (shaking off by centrifugal force). This can be done by spraying on the wafer W. By controlling the rotation of the wafer W, the flow toward the outer periphery of the solution of the sublimable substance discharged onto the wafer W can be controlled, and the film thickness of the sublimable substance solution and the film of the sublimable substance can be controlled. The film thickness can be easily adjusted. In addition, a film made of a sublimable substance having a uniform thickness can be formed. It should be noted that a heated gas such as hot N ₂ gas may be sprayed onto the wafer W to promote the drying of the solvent. In such a case, the temperature of the wafer W, that is, the temperature of the sublimable substance may be increased. The temperature is lower than the sublimation temperature, specifically, the solvent is maintained at a temperature at which the solvent of the sublimable substance is dried but the sublimable substance is not sublimated.

The solvent drying step can be performed or accelerated by spraying not only the above-described N ₂ gas but also other drying promoting fluid such as clean air or CDA (clean dry air). Further, the solvent drying step is performed by a heating means such as a resistance heater built in the disk portion of the substrate holding portion of the spin chuck, or by a heating means such as an LED lamp heater provided on the top plate (see FIG. 5 for details). And the wafer W is heated to a temperature lower than the sublimation temperature of the sublimable substance, specifically, a temperature at which the solvent of the sublimable substance solution is dried but the sublimable substance is not sublimated. Can be promoted.

  When the solvent drying process is completed, the substrate transport mechanism 6 unloads the wafer W from the liquid processing unit 10 and loads it into the hot plate unit 60 shown in FIG. The exhaust hood 64 descends to form a processing space with the hot plate 61. The wafer W is heated to a temperature higher than the sublimation temperature of the sublimable substance by the heated plate 61 while the upper space of the wafer W is sucked by the pump 66 interposed in the exhaust pipe 65 connected to the exhaust hood 64. Is heated. Specifically, the wafer W is heated to about 100 to 300 degrees. At this time, the surfaces of the exhaust pipe 65 and the exhaust hood 64 are also preferably heated to a temperature higher than the sublimation temperature of the sublimable substance. Thereby, the sublimable substance on the wafer W is sublimated and removed from the wafer W (sublimable substance removing step). The state at the end of the sublimation substance removing step is shown in FIG. 6D, and the sublimation substance filled in the recesses 102 is removed, and a desired pattern is obtained. Note that the sublimable substance that has been sublimated into gas is recovered by the sublimable substance recovery device 66 and reused. Then, the wafer W after the substrate drying method is unloaded from the hot plate unit 60 by the substrate transfer mechanism 6 and transferred to the carrier C via the transfer unit.

  According to the above embodiment, the rinsing liquid that has entered the recesses 102 of the pattern 100 after the rinsing step is replaced with a sublimable substance solution, filled with the sublimable substance solution, and the solvent of the solution is dried. Since the recessed portion is filled with the deposited solid sublimable substance, and then the sublimable substance is sublimated to be removed from the recessed portion, the convex portion 101 of the pattern 100 is caused by the high surface tension of the rinse liquid. No stress is applied. For this reason, it is possible to prevent the convex portion 101 from falling, that is, pattern collapse. In addition, the above substrate drying method can be executed by adding a sublimable substance solution supply means and a heating means to the conventional apparatus without requiring a plasma processing apparatus.

  Further, the solvent drying step is performed while rotating the wafer W, and the film thickness of the solid sublimable material is reduced as long as the convex portion 101 of the pattern is sufficiently covered. The process can be completed in a short time, and the processing time can be shortened. Furthermore, the time required for the sublimation substance removing step can be minimized by making the film of the sublimation substance uniform.

  In the above embodiment, each process from the rinsing process to the solvent drying process is performed in the same processing unit (liquid processing unit 10), and only the sublimation substance removing process is performed in another single processing unit (hot plate unit 60). It is done by. However, in addition to the rinsing step and the solvent drying step, the sublimable substance removing step can also be performed by one processing unit (unit). In this case, what is necessary is just to comprise as shown in FIG. 5, adding a component to the liquid processing unit 10 shown in FIG. That is, as shown in FIG. 5, a heating means such as a resistance heater 15 is provided on the disk portion of the substrate holding portion 14. In addition, a top plate 70 that covers the upper portion of the wafer W held by the substrate holding unit 14 and can be moved up and down is provided. The top plate 70 is provided with heating means such as an LED lamp heater 71. An exhaust hole 72 is provided in the central portion of the top plate 70, and an exhaust pipe 65 in which a sublimable substance recovery device 66 and a pump 67 are interposed is connected to the exhaust hole 72 (see FIG. 4). Same as shown). Further, the wafer W is provided with nozzles 20, 22, 24, and 30 for discharging a chemical solution, a rinsing solution, a sublimation substance solution, and a drying accelerating fluid. These nozzles are located above the center of the wafer W and outside the cup 18. It is possible to move between the standby positions at

  In the processing unit having such a configuration, first, the substrate is carried into the processing unit with the top plate 70 raised, and the wafer W is held by the holding member 12. The nozzle moves above the held wafer W, and fluid is discharged from the nozzles 20, 22, 24, and 30, respectively. When the solvent drying process is completed, the nozzle is moved to a standby position outside the cup 18. After the nozzle comes out of the cup 18, the top plate 70 is lowered to form a processing space with the substrate holder 14. Thereafter, the heating means heats the wafer W to a temperature higher than the sublimation temperature of the sublimable substance, and the sublimable substance filled in the recesses 102 of the pattern 100 is removed. At this time, the surfaces of the exhaust pipe 65 and the top plate 70 are also heated to a temperature higher than the sublimation temperature of the sublimable substance. When the sublimation material is removed and the substrate drying method is completed. The top plate 70 is raised and the wafer W is unloaded from the processing unit.

In the embodiment shown in FIG. 5, the heating means is used to heat the wafer W when performing the sublimation substance removing step. Such a heating means is used to execute or accelerate the solvent drying step. It can also be used. More specifically, the blowing N ₂ gas N ₂ gas nozzle 24 at a solvent drying step, or, instead of spraying, the wafer W to a temperature but not sublimable material sublimates the solvent of a solution of sublimable material is dried It can also be used for heating. And after a solvent drying process is complete | finished, the wafer W is further heated to the temperature higher than the sublimation temperature of a sublimable substance, and a sublimable substance removal process is performed.

In the embodiment shown in FIG. 5, a resistance heater or an LED lamp heater is used as the heating means, but any means capable of heating the wafer W to a temperature higher than the sublimation temperature of the sublimable substance. Not limited to this. For example, a heated gas such as air or N ₂ gas may be supplied from above the wafer W. Alternatively, the sublimation temperature of the sublimable substance may be lowered by reducing the pressure of the processing unit, and the wafer W may be heated by the above-described heating means to a temperature higher than the sublimation temperature.

  It is sufficient if the heating means is provided on at least one of the substrate holding part 14 and the top plate 70. The top plate 70 can be replaced with the hood 60 shown in FIG. Further, by using only one of the heating means provided in the substrate holding part 14 and the top plate 70 in the solvent drying process and using the other heating means remaining in the sublimation substance removing process, the sublimable substance is used. The wafer W can be heated to a temperature higher than the sublimation temperature. Further, in order to prevent the sublimation substance from adhering to the exhaust pipe 65 and the top plate 70 on the upstream side of the sublimation substance recovery device 66, the heating means provided on the top plate 70 is used to It is more preferable to maintain the surface at a temperature higher than the sublimation temperature of the sublimable substance.

  In the above embodiment, each step of the substrate drying method is combined with the chemical solution cleaning step, but the present invention is not limited to this, and each step of the substrate drying method can be combined with the development step. For example, a development process is performed to form a predetermined pattern on a photoresist film exposed by an exposure apparatus and subjected to a predetermined post-exposure process such as a post-exposure heating (PEB) process. After the rinsing step after the step, each step of the substrate drying method described above can be performed. Even when the aspect ratio of the pattern formed in the development process is high, the pattern collapse may occur in the drying process after the rinsing process with a high surface tension liquid such as DIW. is there. The development processing unit for executing this method is constructed by replacing the chemical solution supply system (liquid supply source, nozzle, pipe, valve, etc.) of the liquid processing unit 10 shown in FIG. 1 with a developer supply system. be able to.

W substrate (semiconductor wafer)
11 Spin chuck 22, 22a, 22b, 22c Rinse solution supply means 24, 24a, 24b, 24c N ₂ gas supply means 30, 30a, 30b, 30c, 31, 32, 34 Sublimable substance solution supply means 15, 62, 71 Heating means 100 Pattern 101 Pattern convex portion 102 Pattern concave portion

Claims (14)

In the substrate drying method of removing the liquid on the substrate having a concavo-convex pattern formed on the surface and drying the substrate,
A sublimation substance filling step of supplying a solution of a sublimation substance to the substrate and filling the solution into the recesses of the pattern;
A solvent drying step of drying the solvent in the solution and filling the concave portion of the pattern with the sublimable substance in a solid state;
Heating the substrate to a temperature higher than the sublimation temperature of the sublimable material to remove the sublimable material from the substrate;
A substrate drying method comprising:   The substrate drying method according to claim 1, wherein the solvent drying step is performed by at least one of rotating the substrate and supplying a drying accelerating fluid to the substrate.   The substrate drying method according to claim 1, wherein in the solvent drying step, the sublimable substance in a solid state covers the pattern.   5. The substrate drying method according to claim 1, wherein in the solvent drying step, the sublimable substance in a solid state is formed on the substrate with a uniform film thickness.   The substrate drying method according to claim 1, wherein the solvent drying step is performed by heating the substrate to a temperature lower than a sublimation temperature of the sublimable substance.   The substrate drying method according to claim 1, wherein the substrate drying method is performed in one processing unit.   In the substrate drying method, the sublimation substance filling step and the solvent drying step are performed in one processing unit, and the sublimation substance removing step is performed in a processing unit different from the one processing unit. The substrate drying method according to any one of claims 1 to 5.   The substrate drying method according to claim 1, wherein the sublimable substance is ammonium silicofluoride, camphor, or naphthalene.   The substrate drying method according to claim 1, wherein the solvent of the solution is water, alcohol, or a mixture thereof.   The rinsing step of supplying a rinsing liquid to the substrate before the sublimable substance filling step is performed, and the rinsing liquid on the substrate is replaced with a solution of the sublimable substance by the sublimable substance filling step. The substrate drying method according to any one of 1 to 9. A liquid supply means for supplying a liquid to the substrate;
A sublimable substance solution supply means for supplying a solution of the sublimable substance to the substrate;
Solvent drying means for drying the solvent in the solution of the sublimable substance attached to the substrate;
A substrate processing apparatus comprising: heating means for heating the substrate to a temperature higher than a sublimation temperature of the sublimable substance.   The substrate processing apparatus according to claim 11, further comprising an exhaust unit that discharges the sublimated substance that has been sublimated. The substrate processing apparatus includes:
A first processing unit comprising the liquid supply means, the sublimable substance solution supply means, and the solvent drying means;
A second processing unit comprising the heating means;
A substrate transport mechanism for transporting the substrate in and out of the first processing unit and the second processing unit;
The substrate processing apparatus of Claim 11 or 12 provided with these.   The substrate processing apparatus according to claim 11, wherein the solvent drying unit heats the substrate to a temperature lower than a sublimation temperature of the sublimable substance.

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