KR20210046770A - Substrate processing method and substrate processing apparatus - Google Patents

Abstract

The present invention relates to a substrate processing method and a substrate processing apparatus for performing sublimation drying, wherein a solvent is evaporated from a liquid film of a drying pretreatment liquid containing a sublimable substance covering the surface of a substrate to obtain a solidified body containing a sublimable substance on a substrate. In the drying pretreatment liquid film exclusion process in which the liquid film is removed from the surface of the substrate by forming on the surface of the solidified body and sublimating the solidified body, a dry region in which the solidified body is sublimated and the surface of the substrate dried, and the solidified body remain The solidified body remaining region and the liquid remaining region where the liquid film remained are in this order from the center of the surface of the substrate toward the periphery of the surface of the substrate, creating a coexistence state, and maintaining the coexistence state while maintaining the coexistence state of the solidified body. The drying area is enlarged to move toward the periphery of the surface of the substrate. Thereby, the influence of the stress caused by the sublimable material in the solid state can be reduced, and collapse of the pattern on the substrate can be reduced.

Description

Substrate processing method and substrate processing apparatus

The present invention relates to a substrate processing method and a substrate processing apparatus for processing a substrate. Substrates to be processed include, for example, semiconductor wafers, substrates for liquid crystal display devices, flat panel displays (FPDs) such as organic EL (electroluminescence) displays, substrates for optical disks, substrates for magnetic disks, and magneto-optical disks. Substrates such as substrates for use, photomasks, ceramics, and solar cells are included.

In a manufacturing process such as a semiconductor device or a liquid crystal display device, processing is performed on a substrate as necessary. Such processing includes supplying a chemical liquid, a rinse liquid, or the like to the substrate. After the rinse liquid is supplied, the rinse liquid is removed from the substrate, and the substrate is dried. In a single wafer substrate processing apparatus that processes substrates one by one, spin drying is performed to dry the substrate by removing liquid adhering to the substrate by rotating the substrate at a high speed.

When a pattern is formed on the surface of the substrate, when drying the substrate, the surface tension of the rinse liquid adhered to the substrate acts on the pattern, and the pattern may collapse. As a countermeasure, a method of supplying a liquid with low surface tension, such as IPA (isopropyl alcohol), to the substrate, or supplying a hydrophobic agent to the substrate to reduce the surface tension of the liquid on the pattern by hydrophobizing the surface of the substrate. Is employed. However, even if the surface tension acting on the pattern is reduced by using IPA or a hydrophobic agent, depending on the strength of the pattern, there is a fear that pattern collapse cannot be sufficiently prevented.

In recent years, sublimation drying is attracting attention as a technique for drying a substrate while preventing pattern collapse. Patent Document 1 discloses an example of a substrate processing method and a substrate processing apparatus for performing sublimation drying. In the sublimation drying described in Patent Document 1, a solution of the sublimable substance is supplied to the surface of the substrate, and DIW (deionized water) on the substrate is replaced with the solution of the sublimable substance. Thereafter, by evaporating the solvent in the solution of the sublimable substance, the sublimable substance is precipitated, and a film made of the sublimable substance in a solid state is formed. Then, by heating the substrate to sublimate the sublimable material, the film made of the sublimable material in a solid state is removed from the substrate.

Japanese Patent Application Publication No. 2012-243869

When the time that the sublimable substance is held in the solid state is long, the time for the stress caused by the sublimable substance in the solid state to act on the pattern becomes longer, and the pattern is liable to collapse.

In the sublimation drying disclosed in Patent Document 1, after the solid state sublimable substance is deposited over the entire surface of the substrate, the solid state sublimable substance sublimates. The timing at which the deposition of the sublimable substance or the sublimation starts is not the same over the entire surface of the substrate, and differs according to each position on the surface of the substrate. Therefore, the time for which the sublimable substance is held in the solid state becomes longer as the position at which the timing of the sublimation start of the sublimable substance starts is longer, and becomes longer at the position at which the timing at which the sublimation of the sublimable substance starts is delayed. Accordingly, there is a concern that a portion for a longer time for the stress due to the sublimable material in the solid state to act on the pattern may occur on the surface of the substrate.

Thus, one object of the present invention is to provide a substrate processing method and a substrate processing apparatus capable of reducing the influence of stress caused by a solidified body containing a sublimable material, thereby reducing collapse of a pattern on a substrate.

In one embodiment of the present invention, a drying pretreatment solution, which is a solution containing a sublimable material that changes from solid to gas without passing through a liquid, and a solvent for dissolving the sublimable material, is supplied to the surface of the patterned substrate, A drying pretreatment liquid film forming process in which a liquid film of the drying pretreatment solution covering the surface of the substrate is formed on the surface of the substrate, and a solidified body including the sublimable material is deposited on the surface of the substrate by evaporating the solvent from the liquid film. And a drying pretreatment liquid film exclusion step of removing the liquid film from the surface of the substrate by sublimating the solidified body, and the drying pretreatment liquid film exclusion step includes the solidified body sublimated to the surface of the substrate. The dried dry region, the solidified substance remaining region in which the solidified substance remains, and the liquid remaining region in which the liquid film remains are arranged in this order from the center of the surface of the substrate toward the periphery of the surface of the substrate. A substrate processing method comprising a region coexistence state generation process for generating a region coexistence state; and a drying region enlargement step of expanding the drying region so that the solidified material remaining region moves toward the periphery of the surface of the substrate while maintaining the region coexistence state. Provides.

According to this method, the liquid film of the drying pretreatment solution is removed from the surface of the substrate by expanding the drying area while maintaining the area coexistence state. Thereby, the entire surface of the substrate can be dried.

When expanding the dry area, the area where the solidified material remains moves toward the periphery of the surface of the substrate. Therefore, at an arbitrary location on the surface of the substrate, the solidified body formed at the said location is sublimated without waiting for formation of the solidified body at other locations. Therefore, compared with the method in which the solidified body is started to sublimate after the solidified body is formed over the entire surface of the substrate, the time for which the solidified body is held can be shortened at an arbitrary location on the surface of the substrate. Therefore, it is possible to shorten the time for the stress caused by the solidified body to act on the pattern on the surface of the substrate.

As a result, it is possible to reduce the influence of the stress caused by the solidified body containing the sublimable material, so that collapse of the pattern on the substrate can be reduced.

In one embodiment of the present invention, the drying region expanding step is a ring surrounding the dried region when viewed in a plan view, while maintaining the solidified body remaining region, the solidified body remaining region is at the periphery of the surface of the substrate. And expanding the drying area so as to move toward it. Therefore, the solidified body remaining region moves toward the periphery of the surface of the substrate while scanning the entire surface of the substrate without gap. Therefore, over the entire surface of the substrate, the time for the stress caused by the solidified body to act on the pattern can be shortened. Thereby, it is possible to reduce the collapse of the pattern over the entire surface of the substrate.

In one embodiment of the present invention, the substrate processing method includes drying of the solidified body in the solidified body remaining region and a portion in the liquid remaining region adjacent to the solidified body remaining region during the expansion of the drying region. It further includes a gas supply process of supplying gas toward the pretreatment liquid. Therefore, sublimation of the solidified body can be promoted in the region where the solidified body remains. In addition, it is also possible to promote evaporation of the solvent from the dry pretreatment liquid present in a portion in the liquid remaining region close to the solidified body remaining region to promote the formation of the coagulated body. Thereby, it is possible to promote the movement of the solidified substance remaining region toward the peripheral edge side of the surface of the substrate and the expansion of the dried region while maintaining the region coexistence state. Therefore, the time for which the stress caused by the solidified body acts on the pattern on the surface of the substrate can be further shortened.

In one embodiment of the present invention, the gas supply step includes a gas discharge step of discharging a gas from a nozzle toward the surface of the substrate, and with the expansion of the drying region, the nozzle is positioned at the periphery of the surface of the substrate. It includes a nozzle movement step of moving toward. Therefore, while the area where the solidified body remains moving toward the periphery of the surface of the substrate due to the expansion of the drying area, the nozzle can be held at a position closer to the remaining area of the solidified body than the central portion of the surface of the substrate. Therefore, during the expansion of the drying area, gas can be efficiently supplied to the area where the solidified material remains. Therefore, the sublimation of the solidified body can be further promoted in the region where the solidified body remains. Further, evaporation of the solvent from the dry pretreatment liquid present in a portion in the liquid remaining region close to the solidified substance remaining region can be promoted to further promote the formation of the solidified body. Thereby, the expansion of the dry area can be further promoted. Therefore, the time for the stress caused by the solidified body to act on the pattern on the surface of the substrate can be further shortened.

In one embodiment of the present invention, the substrate processing method includes drying of the solidified body in the solidified body remaining region and a portion in the liquid remaining region adjacent to the solidified body remaining region during the expansion of the drying region. It further includes a heating step of heating the pretreatment liquid. Therefore, sublimation of the solidified body can be promoted in the region where the solidified body remains. In addition, it is also possible to promote evaporation of the solvent from the dry pretreatment liquid present in a portion in the liquid remaining region close to the solidified body remaining region to promote the formation of the coagulated body. Thereby, it is possible to promote the movement of the solidified substance remaining region toward the peripheral edge side of the surface of the substrate and the expansion of the dried region while maintaining the region coexistence state. Therefore, the time for the stress caused by the solidified body to act on the pattern on the surface of the substrate can be further shortened.

In one embodiment of the present invention, the heating step includes a heater moving step of moving the heater toward the periphery of the surface of the substrate as the drying region is expanded. Therefore, the heater can be held at a position closer to the solidified body remaining region than the central portion of the substrate while the solidified body remaining region moves toward the periphery of the surface of the substrate due to the expansion of the drying region. Therefore, during the expansion of the drying area, the solidified body can be efficiently heated. Thereby, sublimation of the solidified body can be further promoted in the region where the solidified body remains. Further, evaporation of the solvent from the dry pretreatment liquid present in a portion in the liquid remaining region close to the solidified substance remaining region can be promoted to further promote the formation of the solidified body. Thereby, the expansion of the dry area can be further promoted. Therefore, the time for the stress caused by the solidified body to act on the pattern on the surface of the substrate can be further shortened.

In one embodiment of the present invention, the substrate processing method is a substrate for rotating the substrate around a vertical axis passing through the central portion of the surface of the substrate in parallel with the drying pretreatment liquid film forming step and the drying pretreatment liquid film exclusion step. It further includes a rotating process. Further, the substrate rotation process includes a rotation acceleration process of accelerating the rotation of the substrate at the same time as the start of the region coexistence state generation process.

According to this method, the substrate is rotated in the drying pretreatment liquid film forming step and the drying pretreatment liquid film removing step, and rotation of the substrate is accelerated at the same time as the start of the drying pretreatment liquid film removing step. That is, the substrate is rotated at a relatively low speed in the drying pretreatment liquid film formation step, and relatively high speed rotation in the drying pretreatment liquid film removing step.

Therefore, in the drying pretreatment liquid film forming step, since a sufficiently thick liquid film can be formed on the surface of the substrate, the entire surface of the substrate can be reliably covered with the liquid film of the drying pretreatment liquid. On the other hand, in the drying pretreatment liquid film removal step, the centrifugal force acting on the liquid film increases, so that the liquid film of the dry pretreatment liquid becomes thinner. Therefore, since the amount of the solvent evaporated for formation of the solidified body is reduced, the solidified body can be quickly formed in the drying area expansion step. Further, as the liquid film of the drying pretreatment liquid becomes thinner, the solidified body formed from the liquid film also becomes thinner. Therefore, in the drying area expansion process, the solidified body can be quickly sublimated. Therefore, it is possible to quickly expand the drying area. Therefore, the time for the stress caused by the solidified body to act on the pattern on the surface of the substrate can be further shortened.

In one embodiment of the present invention, the region coexistence state generating step includes a step of forming the dried region and the solidified substance remaining region in the central portion of the liquid film by blowing gas toward the central portion of the surface of the substrate. . In addition, the rotation acceleration step includes a step of accelerating the rotation of the substrate at the same time as the start of gas spraying in the region coexistence state generation step.

According to this method, the rotation of the substrate is accelerated at the same time as the start of gas blowing in the region coexistence state generation step. Therefore, the liquid film can be kept in a sufficiently thick state until just before the start of gas blowing. Accordingly, the entire surface of the substrate can be reliably covered with the liquid film of the drying pretreatment solution. On the other hand, after the start of spraying of gas, the centrifugal force acting on the liquid film increases due to the acceleration of rotation of the substrate, so that the liquid film of the drying pretreatment liquid becomes thin. Therefore, since the amount of the solvent evaporated for formation of the solidified body is reduced, the solidified body can be formed quickly. Further, as the liquid film of the drying pretreatment liquid becomes thinner, the solidified body formed from the liquid film also becomes thinner. Therefore, in the drying area expansion process, the solidified body can be quickly sublimated. Therefore, it is possible to quickly expand the drying area. Therefore, the time for the stress caused by the solidified body to act on the pattern on the surface of the substrate can be further shortened.

In one embodiment of the present invention, the region coexistence state generating step includes a step of forming the dried region and the solidified body remaining region in the central portion of the liquid film by heating the central portion of the liquid film. The rotation acceleration step includes a step of accelerating the rotation of the substrate at the same time as starting heating of the central portion of the liquid film in the region coexistence state generating step.

According to this method, the rotation of the substrate is accelerated simultaneously with the start of heating of the central portion of the liquid film in the region coexistence state generation step. Therefore, the liquid film can be kept in a sufficiently thick state until just before the start of heating of the central portion of the liquid film. Accordingly, the entire surface of the substrate can be reliably covered with the liquid film of the drying pretreatment solution. On the other hand, after the heating of the central portion of the liquid film is started, the centrifugal force acting on the liquid film increases due to the acceleration of rotation of the substrate, so that the liquid film of the drying pretreatment liquid becomes thin. Therefore, since the amount of the solvent evaporated for formation of the solidified body is reduced, the solidified body can be formed quickly. Further, as the liquid film of the drying pretreatment liquid becomes thinner, the solidified body formed from the liquid film also becomes thinner. Therefore, in the drying area expansion process, the solidified body can be quickly sublimated. Therefore, it is possible to quickly expand the drying area. Therefore, the time for the stress caused by the solidified body to act on the pattern on the surface of the substrate can be further shortened.

In one embodiment of the present invention, the substrate treatment method includes a rinse liquid supplying step of supplying a rinse liquid to the surface of the substrate, and a replacement liquid compatible with both the rinse liquid and the drying pretreatment liquid to the substrate. By supplying to the surface of the substrate, a replacement step of replacing the rinse liquid on the surface of the substrate with the replacement liquid is further included. The drying pretreatment liquid film forming step includes a step of supplying the drying pretreatment liquid to the surface of the substrate after the rinse liquid is replaced by the replacement liquid.

According to this method, the replacement liquid has compatibility with both the rinse liquid and the drying pretreatment liquid. Therefore, even if the rinse liquid and the drying pretreatment liquid are not mixed, the dry pretreatment liquid is supplied to the surface of the substrate after replacing the rinse liquid on the surface of the substrate with a replacement liquid, thereby forming a liquid film of the drying pretreatment liquid on the surface of the substrate. Can be formed. Therefore, the degree of freedom of selection between the rinse liquid and the drying pretreatment liquid is increased. Thereby, irrespective of the kind of the rinse liquid, from the viewpoint of the influence of the stress caused by the solidified body on the pattern collapse, it is possible to select a drying pretreatment liquid containing an appropriate sublimable substance. Therefore, pattern collapse can be further reduced.

In another embodiment of the present invention, a dry pretreatment solution, which is a solution containing a sublimable material that changes from solid to gas without passing through a liquid, and a solvent for dissolving the sublimable material, is supplied to the surface of the patterned substrate, A dry pretreatment liquid film forming unit for forming a liquid film of the dry pretreatment liquid covering the surface of the substrate on the surface of the substrate, and a solidified body including the sublimable material by evaporating the solvent from the liquid film on the surface of the substrate. And a drying pretreatment liquid film exclusion unit which removes the liquid film from the surface of the substrate by sublimating the solidified body, wherein the drying pretreatment liquid film exclusion unit includes the solidified body sublimated to the surface of the substrate The dried dry region, the solidified substance remaining region in which the solidified substance remains, and the liquid remaining region in which the liquid film remains are arranged in this order from the center of the surface of the substrate toward the periphery of the surface of the substrate. And, while maintaining the region coexistence state, the drying region is enlarged so that the remaining region of the solidified material moves toward the periphery of the surface of the substrate.

According to this apparatus, the liquid film for pre-drying treatment is removed from the surface of the substrate by expanding the drying region while maintaining the region coexistence state. Thereby, the entire surface of the substrate can be dried.

When expanding the dry area, the area where the solidified material remains moves toward the periphery of the surface of the substrate. Therefore, at an arbitrary location on the surface of the substrate, the solidified body formed at the said location is sublimated without waiting for formation of the solidified body at other locations. Therefore, compared with the method in which the solidified body starts sublimation after the solidified body is formed over the entire surface of the substrate, the time for which the solidified body is held at any point on the surface of the substrate can be shortened. Therefore, it is possible to shorten the time for the stress caused by the solidified body to act on the pattern on the surface of the substrate.

As a result, it is possible to reduce the influence of the stress caused by the solidified body containing the sublimable material, so that collapse of the pattern on the substrate can be reduced.

In another embodiment of the present invention, the drying pretreatment liquid film exclusion unit includes a portion of the solidified body in the solidified body remaining region and a portion in the liquid remaining region adjacent to the solidified body remaining region during the expansion of the drying region. And a gas supply unit supplying gas toward the drying pretreatment liquid. Therefore, sublimation of the solidified body can be promoted in the region where the solidified body remains. In addition, it is also possible to promote evaporation of the solvent from the dry pretreatment liquid present in a portion in the liquid remaining region close to the solidified body remaining region to promote the formation of the coagulated body. Thereby, it is possible to promote the movement of the solidified body remaining region toward the peripheral portion of the surface of the substrate and the expansion of the dried region. Therefore, the time for the stress caused by the solidified body to act on the pattern on the surface of the substrate can be further shortened.

In another embodiment of the present invention, the pre-drying liquid film exclusion unit includes a substrate rotating unit that rotates the substrate around a vertical axis passing through the central portion of the surface of the substrate during the expansion of the drying region. According to this apparatus, a centrifugal force is applied to the liquid film to remove a part of the dry pretreatment liquid in the liquid film from the surface of the substrate, thereby making the liquid film thin. Therefore, since the amount of the solvent evaporated for formation of the solidified body is reduced, the solidified body can be formed quickly. Further, as the liquid film of the drying pretreatment liquid becomes thinner, the solidified body formed from the liquid film also becomes thinner. Therefore, the solidified body can be quickly sublimated in the drying area expansion process. Therefore, it is possible to quickly expand the drying area. Therefore, the time for the stress caused by the solidified body to act on the pattern on the surface of the substrate can be further shortened.

In another embodiment of the present invention, the drying pretreatment liquid film exclusion unit includes a portion of the solidified body in the solidified body remaining region and a portion in the liquid remaining region adjacent to the solidified body remaining region during the expansion of the drying region. And a heating unit for heating the drying pretreatment liquid. Therefore, sublimation of the solidified body can be promoted in the region where the solidified body remains. In addition, it is also possible to promote evaporation of the solvent from the dry pretreatment liquid present in a portion in the liquid remaining region close to the solidified body remaining region to promote the formation of the coagulated body. Thereby, it is possible to promote the movement of the solidified body remaining region toward the peripheral portion of the surface of the substrate and the expansion of the dried region. Therefore, the time for the stress caused by the solidified body to act on the pattern on the surface of the substrate can be further shortened.

The above-described or other objects, features, and effects in the present invention will be revealed by the description of the embodiments described below with reference to the accompanying drawings.

1 is a schematic plan view showing a layout of a substrate processing apparatus according to a first embodiment of the present invention.
2 is a schematic partial cross-sectional view showing a schematic configuration of a processing unit included in the substrate processing apparatus.
3 is a block diagram showing an electrical configuration of a main part of the substrate processing apparatus.
4 is a flowchart for explaining an example of substrate processing by the substrate processing apparatus.
5A is a schematic diagram for explaining a state of a pre-drying liquid film forming process (step S5) of the substrate treatment.
5B is a schematic diagram for explaining the state of the drying pretreatment liquid film forming process (step S5).
5C is a schematic diagram for explaining a state of a pre-drying liquid film exclusion step (step S6) of the substrate treatment.
5D is a schematic diagram for explaining the state of the drying pretreatment liquid film exclusion process (step S6).
Fig. 6A is a plan view of the substrate in the region coexistence state generation step of the drying pretreatment liquid film exclusion step (step S6).
Fig. 6B is a plan view of the substrate in the drying region expansion step of the drying pretreatment liquid film removing step (step S6).
Fig. 7 is a schematic diagram for explaining the state of the surface of the substrate in the drying region expansion step.
8A is a schematic partial cross-sectional view of a spin chuck provided in a processing unit included in the substrate processing apparatus according to the second embodiment and members around the spin chuck.
8B is a schematic plan view of a spin base provided in the processing unit according to the second embodiment and members around the spin base.
9 is a schematic diagram for explaining a state of a drying pretreatment liquid film removing step (step S6) of the substrate treatment by the substrate processing apparatus according to the second embodiment.
10 is a schematic diagram of the periphery of a spin chuck provided in a processing unit included in the substrate processing apparatus according to the third embodiment.
11 is a schematic diagram for explaining a state of a drying pretreatment liquid film removing step (step S6) of the substrate treatment by the substrate processing apparatus according to the third embodiment.
12A is a schematic diagram for explaining a state of a region coexistence state generation process by the substrate processing apparatus according to the fourth embodiment.
12B is a schematic diagram for explaining a state of a drying area expansion process by the substrate processing apparatus according to the fourth embodiment.
13A is a schematic diagram for explaining a state of a region coexistence state generation process by the substrate processing apparatus according to the fifth embodiment.
13B is a schematic diagram for explaining a state of a drying area expansion step by the substrate processing apparatus according to the fifth embodiment.

<First embodiment>

1 is a schematic plan view showing a layout of a substrate processing apparatus 1 according to a first embodiment of the present invention.

The substrate processing apparatus 1 is a single wafer type apparatus that processes a substrate W such as a silicon wafer one by one. In this embodiment, the substrate W is a disk-shaped substrate.

In the substrate processing apparatus 1, a plurality of processing units 2 for processing a substrate W with a fluid, and a carrier C for accommodating a plurality of substrates W processed by the processing unit 2 are mounted ( A transfer robot (IR and CR) that transfers the substrate W between the load port LP to be transferred, the load port LP and the processing unit 2, and controls the substrate processing apparatus 1 It includes a controller (3).

The transfer robot IR transfers the substrate W between the carrier C and the transfer robot CR. The transfer robot CR transfers the substrate W between the transfer robot IR and the processing unit 2. The plurality of processing units 2 have the same configuration, for example. Although it will be described later in detail, the processing liquid supplied to the substrate W in the processing unit 2 includes a chemical liquid, a rinse liquid, a replacement liquid, a drying pretreatment liquid, and the like.

Each processing unit 2 includes a chamber 4 and a processing cup 7 disposed in the chamber 4, and performs processing on the substrate W in the processing cup 7. In the chamber 4, the entrance 4a for carrying in the board|substrate W or carrying out the board|substrate W is formed by the transfer robot CR. The chamber 4 is provided with a shutter unit (not shown) for opening and closing the entrance 4a.

2 is a schematic diagram for explaining a configuration example of the processing unit 2. The treatment unit 2 includes a spin chuck 5, a counter member 6, a treatment cup 7, a chemical liquid nozzle 8, a rinse liquid nozzle 9, and a dry pretreatment liquid nozzle 10. And, a displacement liquid nozzle 11, a central nozzle 12, and a lower surface nozzle 13 are included.

The spin chuck 5 rotates the substrate W around a vertical rotation axis A1 (vertical axis) passing through the central portion of the substrate W while holding the substrate W horizontally. The spin chuck 5 includes a plurality of chuck pins 20, a spin base 21, a rotation shaft 22, and a spin motor 23.

The spin base 21 has a disk shape along the horizontal direction. On the upper surface of the spin base 21, a plurality of chuck pins 20 for holding the periphery of the substrate W are disposed at intervals in the circumferential direction of the spin base 21. The spin base 21 and the plurality of chuck pins 20 constitute a substrate holding unit that holds the substrate W horizontally. The substrate holding unit is also referred to as a substrate holder.

The rotation shaft 22 extends in the vertical direction along the rotation axis A1. The upper end of the rotation shaft 22 is coupled to the center of the lower surface of the spin base 21. The spin motor 23 imparts a rotational force to the rotation shaft 22. When the rotation shaft 22 is rotated by the spin motor 23, the spin base 21 is rotated. Thereby, the substrate W is rotated around the rotation axis A1. The spin motor 23 is an example of a substrate rotation unit that rotates the substrate W around the rotation axis A1.

The opposing member 6 faces the substrate W held by the spin chuck 5 from above. The counter member 6 is formed in a disk shape having a diameter substantially equal to or larger than that of the substrate W. The opposing member 6 has an opposing surface 6a facing the upper surface (the upper surface) of the substrate W. The opposing surface 6a is disposed above the spin chuck 5 and substantially along a horizontal plane.

A hollow shaft 60 is fixed on the opposite side of the opposing member 6 to the opposing surface 6a. In the portion of the opposing member 6 that overlaps the rotation axis A1 when viewed from the top, an opening 6b that penetrates the opposing member 6 vertically and communicates with the inner space 60a of the hollow shaft 60 Is formed.

The opposing member 6 blocks the atmosphere in the space between the opposing surface 6a and the upper surface of the substrate W from the atmosphere outside the space. Therefore, the opposing member 6 is also called a blocking plate.

The processing unit 2 further includes an opposing member lifting unit 61 that drives the lifting of the opposing member 6. The opposing member lifting unit 61 includes, for example, a ball screw mechanism (not shown) coupled to a support member (not shown) that supports the hollow shaft 60, and an electric motor that provides a driving force to the ball screw mechanism. Includes (not shown). The opposing member lifting unit 61 is also referred to as an opposing member lifter (blocking plate lifter).

The opposing member lifting unit 61 can position the opposing member 6 at an arbitrary position (height) from the lower position to the upper position. The lower position is a position where the opposing surface 6a is closest to the substrate W in the movable range of the opposing member 6. The upper position is a position where the opposing surface 6a is the most spaced apart from the substrate W in the movable range of the opposing member 6.

The processing cup 7 contains a plurality of guides 71 for receiving liquid scattering outward from the substrate W held by the spin chuck 5, and a liquid guided downward by the plurality of guides 71. It includes a plurality of cups 72 to be received, a plurality of guides 71 and a cylindrical outer wall member 73 surrounding the plurality of cups 72. FIG. 2 shows an example in which four guides 71 and three cups 72 are provided, and the outermost cup 72 is integrated with the third guide 71 from above.

The processing unit 2 includes a guide elevating unit 74 that individually elevates the plurality of guides 71. The guide lifting unit 74 includes, for example, a plurality of ball screw mechanisms (not shown) coupled to each of the guides 71, and a plurality of motors (not shown) that respectively apply driving force to each of the ball screw mechanisms. do. The guide lifting unit 74 is also referred to as a guide lifter.

The guide lifting unit 74 positions the guide 71 at an arbitrary position from the upper position to the lower position. Fig. 2 shows a state in which two guides 71 are disposed at an upper position, and the remaining two guides 71 are disposed at a lower position. When the guide 71 is positioned at the upper position, the upper end 71u of the guide 71 is disposed above the substrate W held by the spin chuck 5. When the guide 71 is positioned at the lower position, the upper end 71u of the guide 71 is disposed below the substrate W held by the spin chuck 5.

When supplying the processing liquid to the rotating substrate W, at least one guide 71 is disposed at the upper position. In this state, when the processing liquid is supplied to the substrate W, the processing liquid is removed from the substrate W by centrifugal force. The liquid to be removed collides with the inner surface of the guide 71 horizontally facing the substrate W, and is guided to the cup 72 corresponding to the guide 71. Thereby, the processing liquid discharged from the substrate W is collected in the processing cup 7.

The chemical liquid nozzle 8 is moved in the horizontal direction and the vertical direction by the chemical liquid nozzle moving unit 35. The chemical liquid nozzle 8 can move between a center position and a home position (retract position). When the chemical liquid nozzle 8 is positioned at the center position, it faces the rotation center of the upper surface of the substrate W. The rotation center of the upper surface of the substrate W is a position at which it intersects with the rotation axis A1 on the upper surface of the substrate W.

When the chemical liquid nozzle 8 is positioned at the groove position, it does not face the upper surface of the substrate W, but is positioned outside the processing cup 7 when viewed in a plan view. The chemical liquid nozzle 8 can approach the upper surface of the substrate W or retreat upward from the upper surface of the substrate W by moving in the vertical direction.

The chemical liquid nozzle moving unit 35 includes, for example, an arm 35a supporting the chemical liquid nozzle 8 and extending horizontally, and an arm driving unit 35b that drives the arm 35a. The arm drive unit 35b includes a rotation shaft (not shown) coupled to the arm 35a and extending along a vertical direction, and a rotation shaft drive unit (not shown) that lifts or rotates the rotation shaft.

The rotation shaft drive unit swings the arm 35a by rotating the rotation shaft around a vertical rotation axis. Further, the rotation shaft drive unit moves the arm 35a up and down by raising and lowering the rotation shaft along the vertical direction. As the arm 35a swings and rises, the chemical liquid nozzle 8 moves in the horizontal direction and in the vertical direction.

The chemical liquid nozzle 8 is connected to a chemical liquid pipe 40 that guides the chemical liquid. When the chemical liquid valve 50 interposed in the chemical liquid pipe 40 is opened, the chemical liquid is continuously discharged downward from the chemical liquid nozzle 8. The chemical liquid nozzle 8 is an example of a chemical liquid supply unit that supplies (discharges) a chemical liquid toward the upper surface of the substrate W.

The chemical liquid discharged from the chemical liquid nozzle 8 is, for example, sulfuric acid, acetic acid, nitric acid, hydrochloric acid, hydrofluoric acid, ammonia water, hydrogen peroxide water, organic acid (e.g., citric acid, oxalic acid, etc.), organic alkali (for example, TMAH: A liquid containing at least one of tetramethylammonium hydroxide, etc.), a surfactant, and a corrosion inhibitor. Examples of the mixed chemical solution include SPM solution (sulfuric acid/hydrogen peroxide mixture: sulfuric acid hydrogen peroxide solution mixture), SC1 solution (ammonia-hydrogen peroxide mixture: ammonia hydrogen peroxide solution mixture), and the like.

The rinse liquid nozzle 9 is moved in the horizontal direction and the vertical direction by the rinse liquid nozzle moving unit 36. The rinse liquid nozzle 9 can move between a center position and a home position (retract position). When the rinse liquid nozzle 9 is positioned at the center position, it faces the rotation center of the upper surface of the substrate W.

When the rinse liquid nozzle 9 is positioned at the home position, it does not face the upper surface of the substrate W, but is positioned outside the processing cup 7 when viewed in a plan view. The rinse liquid nozzle 9 can approach the upper surface of the substrate W or retreat upward from the upper surface of the substrate W by moving in the vertical direction.

The rinse liquid nozzle moving unit 36 has the same configuration as the chemical liquid nozzle moving unit 35. That is, the rinse liquid nozzle moving unit 36 includes, for example, an arm 36a supporting the rinse liquid nozzle 9 and extending horizontally, and an arm driving unit 36b that drives the arm 36a. do.

The rinse liquid nozzle 9 is connected to a rinse liquid pipe 41 that guides the rinse liquid. When the rinse liquid valve 51 interposed in the rinse liquid pipe 41 is opened, the rinse liquid is continuously discharged downward from the rinse liquid nozzle 9. The rinse liquid nozzle 9 is an example of a treatment liquid supply unit (rinse liquid supply unit) that supplies (discharges) a treatment liquid (rinse liquid) toward the upper surface of the substrate W.

The rinse liquid discharged from the rinse liquid nozzle 9 is DIW, for example. As the rinse liquid, in addition to DIW, a liquid containing water can be used. As the rinse liquid, in addition to DIW, for example, carbonated water, electrolytic ionized water, hydrogen water, ozone water, ammonia water, and hydrochloric acid water having a dilution concentration (for example, about 10 ppm to 100 ppm) can be used.

The drying pretreatment liquid nozzle 10 is moved in the horizontal direction and the vertical direction by the drying pretreatment liquid nozzle moving unit 37. The drying pretreatment liquid nozzle 10 can move between a center position and a home position (retract position).

When the drying pretreatment liquid nozzle 10 is positioned at the center position, it faces the rotation center of the upper surface of the substrate W. When the drying pretreatment liquid nozzle 10 is positioned at the home position, it does not face the upper surface of the substrate W, but is positioned outside the treatment cup 7 when viewed in a plan view. The drying pretreatment liquid nozzle 10 can approach the upper surface of the substrate W or retreat upward from the upper surface of the substrate W by moving in the vertical direction.

The drying pretreatment liquid nozzle moving unit 37 has the same configuration as the chemical liquid nozzle moving unit 35. That is, the dry pretreatment liquid nozzle moving unit 37 includes, for example, an arm 37a extending horizontally while supporting the dry pretreatment liquid nozzle 10, and an arm driving unit 37b that drives the arm 37a. Includes.

The drying pretreatment liquid nozzle 10 is connected to a drying pretreatment liquid pipe 42 that guides the drying pretreatment liquid to the dry pretreatment liquid nozzle 10. When the dry pretreatment liquid valve 52 interposed in the dry pretreatment liquid pipe 42 is opened, the dry pretreatment liquid is continuously discharged downward from the discharge port of the dry pretreatment liquid nozzle 10. The drying pretreatment liquid nozzle 10 is an example of a dry pretreatment liquid supply unit that supplies (discharges) a dry pretreatment liquid toward the upper surface of the substrate W.

Drying pretreatment liquid The dry pretreatment liquid discharged from the nozzle 10 is a solution containing a sublimable substance corresponding to a solute, and a solvent that dissolves (dissolves the sublimable substance) with the sublimable substance. By evaporation (volatilization) of the solvent from the drying pretreatment liquid, a solid sublimable substance (coagulated material) precipitates.

The sublimable substance contained in the drying pretreatment liquid changes from solid to gas at room temperature (same as room temperature) or at normal pressure (pressure in the substrate processing apparatus 1, for example, 1 atm or a value near it) without passing through a liquid. It may be a material to

Sublimable substances contained in the drying pretreatment liquid include alcohols such as 2-methyl-2-propanol (another name: tert-butyl alcohol, t-butyl alcohol) and cyclohexanol, a fluorinated hydrocarbon compound, 1 ,3,5-trioxane (another name: metaformaldehyde), camphor (another name: camphor, camphor), naphthalene, and iodine may be used, or substances other than these may be used.

The solvent contained in the drying pretreatment solution is, for example, pure water, IPA, HFE (hydrofluoroether), acetone, PGMEA (propylene glycol monomethyl ether acetate), PGEE (propylene glycol monoethyl ether, 1-ethoxy- 2-propanol) and at least one selected from the group consisting of ethylene glycol.

For example, when camphor is used as a sublimable substance, IPA, acetone, PGEE, and the like can be used as a solvent. The coagulation point of camphor (the coagulation point at 1 atmosphere, the same hereinafter) is 175°C to 177°C. Even if the solvent is either IPA, acetone, or PGEE, the freezing point of camphor is higher than the boiling point of the solvent. The freezing point of camphor is higher than that of the dry pretreatment solution. The solidification point of the drying pretreatment liquid is lower than normal temperature (23°C or a value in the vicinity thereof). The substrate processing apparatus 1 is disposed in a clean room maintained at room temperature. Therefore, even if the drying pretreatment liquid is not heated, the drying pretreatment liquid can be maintained as a liquid.

Unlike this embodiment, the solvent contained in the drying pretreatment liquid may be a substance having the same properties as the sublimable substance. That is, the drying pretreatment liquid may contain two or more types of substances that change from solid to gas at room temperature or pressure without passing through a liquid. As an example of the drying pretreatment liquid which consists of two types of sublimable substances, a solution containing cyclohexanol as a solute and cyclohexane as a solvent is mentioned, for example.

The displacement liquid nozzle 11 is moved in the horizontal direction and the vertical direction by the displacement liquid nozzle moving unit 38. The displacement liquid nozzle 11 can move between a center position and a home position (retract position).

When the displacement liquid nozzle 11 is positioned at the center position, it faces the rotation center of the upper surface of the substrate W. When the displacement liquid nozzle 11 is positioned at the groove position, it does not face the upper surface of the substrate W, but is positioned outside the processing cup 7 when viewed in a plan view. The displacement liquid nozzle 11 can approach the upper surface of the substrate W or retreat upward from the upper surface of the substrate W by moving in the vertical direction.

The displacement liquid nozzle moving unit 38 has the same configuration as the chemical liquid nozzle moving unit 35. That is, the displacement liquid nozzle moving unit 38 includes, for example, an arm 38a supporting the displacement liquid nozzle 11 and extending horizontally, and an arm driving unit 38b that drives the arm 38a. do.

The replacement liquid nozzle 11 is connected to a replacement liquid pipe 43 that guides the replacement liquid to the replacement liquid nozzle 11. When the replacement liquid valve 53 interposed in the replacement liquid pipe 43 is opened, the replacement liquid is continuously discharged downward from the discharge port of the replacement liquid nozzle 11. The replacement liquid nozzle 11 is an example of a replacement liquid supply unit that supplies (discharges) a replacement liquid toward the upper surface of the substrate W.

As described later, the replacement liquid is supplied to the upper surface of the substrate W covered with the liquid film of the rinse liquid, and the drying pretreatment liquid is supplied to the upper surface of the substrate W covered with the liquid film of the replacement liquid. The replacement liquid is a liquid that dissolves with both the rinse liquid and the drying pretreatment liquid. That is, the replacement liquid has compatibility (miscibility) with both the rinse liquid and the dry pretreatment liquid. The substitution solution is, for example, IPA. The replacement liquid may be a mixture of IPA and HFE, or may contain at least one of IPA and HFE and components other than these. IPA is a liquid that is miscible with either water or a fluorinated hydrocarbon compound.

The central nozzle 12 is accommodated in the inner space 60a of the hollow shaft 60 of the counter member 6. The discharge port 12a provided at the tip end of the central nozzle 12 faces the central portion of the upper surface of the substrate W from above. The center portion of the upper surface of the substrate W is the center of rotation of the substrate W and a region around it. On the other hand, the periphery of the upper surface of the substrate W and a region around the upper surface of the substrate W are referred to as the periphery of the upper surface of the substrate.

The central nozzle 12 is connected to the first gas pipe 44 that guides the gas to the central nozzle 12. The first gas pipe 44 is interposed with a first gas valve 54 and a first gas flow rate adjustment valve 58. When the first gas valve 54 is opened, gas is continuously discharged downward from the discharge port 12a of the central nozzle 12. By adjusting the opening degree of the first gas flow rate adjustment valve 58, the flow rate of the gas discharged from the discharge port 12a of the central nozzle 12 is adjusted.

The gas discharged from the central nozzle 12 is, for example, an inert gas such as _{nitrogen gas (N 2 ).} The gas discharged from the central nozzle 12 may be air. The inert gas is not limited to nitrogen gas, and is a gas that is inert with respect to the upper surface of the substrate W or the pattern formed on the upper surface of the substrate W. Examples of the inert gas include nitrogen gas and rare gases such as argon.

The inner circumferential surface of the hollow shaft 60 of the counter member 6 and the outer circumferential surface of the central nozzle 12 form a cylindrical gas flow path 65 extending vertically. The gas flow path 65 is connected to a second gas pipe 45 for guiding a gas such as an inert gas to the gas flow path 65. The second gas pipe 45 is interposed with a second gas valve 55 and a second gas flow rate adjustment valve 59. When the second gas valve 55 is opened, gas is continuously discharged downward from the lower end of the gas flow path 65. By adjusting the opening degree of the second gas flow rate adjustment valve 59, the flow rate of the gas discharged from the gas flow path 65 is adjusted.

The gas discharged from the gas flow path 65 is the same gas as the gas discharged from the central nozzle 12. That is, the gas discharged from the gas flow path 65 may be, for example, an inert gas such as _{nitrogen gas (N 2) or air.}

The gas discharged from the gas flow path 65 and the gas discharged from the central nozzle 12 are sprayed together in the center of the upper surface of the substrate W via the opening 6b of the counter member 6.

The lower surface nozzle 13 is inserted into a through hole 21a that opens in the center of the upper surface of the spin base 21. The discharge port 13a of the lower surface nozzle 13 is exposed from the upper surface of the spin base 21. The discharge port 13a of the lower surface nozzle 13 faces the central portion of the lower surface of the substrate W from below.

The lower surface nozzle 13 is connected to a heat medium pipe 46 that guides the lower surface nozzle 13 to the lower surface nozzle 13. When the heat medium valve 56 interposed in the heat medium pipe 46 is opened, the heat medium is continuously discharged from the lower surface nozzle 13 toward the center of the lower surface of the substrate W. The lower surface nozzle 13 is an example of a heat transfer unit that supplies a heat medium for heating the substrate W to the substrate W.

The fruit discharged from the lower surface nozzle 13 is, for example, a high-temperature DIW having a temperature higher than room temperature and lower than the boiling point of the solvent contained in the drying pretreatment liquid. For example, when the solvent contained in the drying pretreatment solution is IPA, the temperature of the high-temperature DIW is set to 60°C to 80°C. The heat medium discharged from the lower surface nozzle 13 is not limited to high-temperature DIW, and may be a high-temperature gas such as a high-temperature inert gas or high-temperature air.

3 is a block diagram showing an electrical configuration of a main part of the substrate processing apparatus 1. The controller 3 includes a microcomputer and controls a control object provided in the substrate processing apparatus 1 according to a predetermined control program.

Specifically, the controller 3 includes a processor (CPU) 3A and a memory 3B in which a control program is stored. The controller 3 is configured such that the processor 3A executes a control program to execute various controls for processing a substrate.

In particular, the controller 3 includes a transfer robot (IR, CR), a spin motor 23, a chemical liquid nozzle moving unit 35, a rinse liquid nozzle moving unit 36, a drying pretreatment liquid nozzle moving unit 37, and a replacement. Liquid nozzle moving unit 38, counter member lifting unit 61, guide lifting unit 74, chemical liquid valve 50, rinse liquid valve 51, dry pretreatment liquid valve 52, displacement liquid valve 53 , The first gas valve 54, the second gas valve 55, the heat medium valve 56, the first gas flow control valve 58 and the second gas flow control valve 59 are programmed to control.

4 is a flowchart for explaining an example of substrate processing by the substrate processing apparatus 1. In Fig. 4, processing mainly realized by the controller 3 executing a program is shown. 5A to 5D are schematic diagrams for explaining the state of each step of substrate processing.

Hereinafter, referring mainly to FIGS. 2 and 4. 5A to 5D are referred to as appropriate.

In the substrate processing by the substrate processing apparatus 1, for example, as shown in FIG. 4, a substrate carrying process (step S1), a chemical solution supplying process (step S2), a rinsing process (step S3), and a replacement process (step S4), the drying pretreatment liquid film formation process (step S5), the drying pretreatment liquid film exclusion process (step S6), and the substrate discharging process (step S7) are performed in this order.

First, the unprocessed substrate W is carried into the processing unit 2 from the carrier C by the transfer robots IR and CR (see Fig. 1), and is handed over to the spin chuck 5 (step S1). Thereby, the substrate W is held horizontally by the spin chuck 5 (substrate holding process). The holding of the substrate W by the spin chuck 5 continues until the drying pretreatment liquid film exclusion process (step S6) is completed. When carrying in the substrate W, the counter member 6 is retracted to the upper position, and the plurality of guides 71 is retracted to the lower position.

After the transfer robot CR retreats outside the processing unit 2, the chemical solution supply process (step S2) is started. In the chemical liquid supply process, the upper surface of the substrate W is treated with the chemical liquid.

Specifically, the spin motor 23 rotates the spin base 21. Thereby, the board|substrate W held horizontally is rotated (substrate rotation process). Then, the chemical liquid nozzle moving unit 35 moves the chemical liquid nozzle 8 to the processing position with the counter member 6 positioned at the upper position. The processing position of the chemical liquid nozzle 8 is, for example, a central position. And, in a state in which at least one guide 71 is located in the upper position, the chemical liquid valve 50 is opened. Thereby, the chemical liquid is supplied (discharged) from the chemical liquid nozzle 8 toward the center of the upper surface of the substrate W in the rotating state (a chemical liquid supply process, a chemical liquid discharge process).

After the chemical liquid discharged from the chemical liquid nozzle 8 lands on the upper surface of the substrate W in a rotating state, it flows outward along the upper surface of the substrate W by centrifugal force. Therefore, the chemical liquid is supplied to the entire upper surface of the substrate W, and a liquid film of the chemical liquid is formed that covers the entire upper surface of the substrate W.

Next, the rinse process (step S3) is started. In the rinsing step, the chemical liquid on the substrate W is washed off with the rinsing liquid.

Specifically, when a predetermined time elapses after the discharge of the chemical liquid is started, the chemical liquid valve 50 is closed. Thereby, the supply of the chemical liquid to the substrate W is stopped. Then, the chemical liquid nozzle moving unit 35 moves the chemical liquid nozzle 8 to the home position. Then, the rinse liquid nozzle moving unit 36 moves the rinse liquid nozzle 9 to the processing position while holding the counter member 6 in the upper position. The processing position of the rinse liquid nozzle 9 is, for example, a central position. Then, the rinse liquid valve 51 is opened. As a result, the rinse liquid is supplied (discharged) from the rinse liquid nozzle 9 toward the center of the upper surface of the substrate W in a rotating state (a rinse liquid supply step, a rinse liquid discharge step).

Before the discharging of the rinse liquid is started, the guide lifting unit 74 may vertically move the at least one guide 71 in order to switch the guide 71 for receiving the liquid discharged from the substrate W. .

After the rinse liquid discharged from the rinse liquid nozzle 9 lands on the upper surface of the substrate W in a rotating state, it flows outward along the upper surface of the substrate W by centrifugal force. Therefore, the rinse liquid is supplied to the entire upper surface of the substrate W, and a liquid film of the rinse liquid covering the entire upper surface of the substrate W is formed.

Next, a replacement process (step S4) in which a replacement liquid having compatibility with both the rinse liquid and the drying pretreatment liquid is supplied to the upper surface of the substrate W, and the rinse liquid on the substrate W is replaced with the replacement liquid. Done.

Specifically, the rinse liquid valve 51 is closed when a predetermined time elapses after the discharge of the rinse liquid is started. Thereby, the supply of the rinse liquid to the substrate W is stopped. Then, the rinse liquid nozzle moving unit 36 moves the rinse liquid nozzle 9 to the home position. Then, the displacement liquid nozzle moving unit 38 moves the displacement liquid nozzle 11 to the processing position with the counter member 6 positioned at the upper position. The processing position of the displacement liquid nozzle 11 is, for example, a central position. Then, the displacement liquid valve 53 is opened. As a result, the replacement liquid is supplied (discharged) from the replacement liquid nozzle 11 toward the center of the upper surface of the substrate W in a rotating state (a replacement liquid supply process, a replacement liquid discharge process).

Before the discharging of the replacement liquid is started, the guide lifting unit 74 may vertically move the at least one guide 71 in order to switch the guide 71 for receiving the liquid discharged from the substrate W. .

After the replacement liquid discharged from the replacement liquid nozzle 11 lands on the upper surface of the substrate W in a rotating state, it flows outward along the upper surface of the substrate W by centrifugal force. Therefore, the replacement liquid is supplied to the entire upper surface of the substrate W, and a liquid film of the replacement liquid is formed that covers the entire upper surface of the substrate W.

Next, after the rinse liquid on the substrate W is replaced with a replacement liquid, the drying pretreatment liquid is supplied to the upper surface of the substrate W, and the liquid film 100 (dry pretreatment liquid film) of the drying pretreatment liquid is applied to the substrate W. A drying pretreatment liquid film forming process (step S5) to be formed on the image is performed.

Specifically, when a predetermined time elapses after the discharging of the replacement liquid is started, the replacement liquid valve 53 is closed. As a result, supply of the replacement liquid to the substrate W is stopped. Then, the displacement liquid nozzle moving unit 38 moves the displacement liquid nozzle 11 to the home position. Then, with the counter member 6 positioned at the upper position, the drying pretreatment liquid nozzle moving unit 37 moves the drying pretreatment liquid nozzle 10 to the treatment position. The treatment position of the drying pretreatment liquid nozzle 10 is, for example, a central position. Then, the drying pretreatment liquid valve 52 is opened. Thereby, as shown in FIG. 5A, the drying pretreatment liquid is supplied (discharged) from the dry pretreatment liquid nozzle 10 toward the center part of the upper surface of the board|substrate W in a rotating state.

Before the discharge of the drying pretreatment liquid is started, the guide lifting unit 74 may vertically move the at least one guide 71 in order to switch the guide 71 for receiving the liquid discharged from the substrate W. do.

Even in the drying pretreatment liquid film formation process, the rotation of the substrate W continues. That is, the substrate rotation process is executed in parallel with the drying pretreatment liquid film formation process. During the discharge of the drying pretreatment liquid, the substrate W is rotated at a predetermined dry pretreatment liquid speed. The drying pretreatment liquid speed is, for example, 300 rpm. After the drying pretreatment liquid discharged from the drying pretreatment liquid nozzle 10 lands on the upper surface of the substrate W in a rotating state, it flows outward along the upper surface of the substrate W by centrifugal force. Therefore, the drying pretreatment liquid is supplied to the entire upper surface of the substrate W, and a liquid film 100 of the drying pretreatment liquid covering the entire upper surface of the substrate W is formed. In this way, the drying pretreatment liquid nozzle 10 functions as a dry pretreatment liquid film forming unit that forms the liquid film 100 of the dry pretreatment liquid on the upper surface of the substrate W.

When the drying pretreatment liquid nozzle 10 is discharging the dry pretreatment liquid, the drying pretreatment liquid nozzle moving unit 37 fixes the position of the drying pretreatment liquid nozzle 10 so that the depositing position of the dry pretreatment liquid stops at the center. Alternatively, the drying pretreatment nozzle 10 may be moved so that the deposition position of the drying pretreatment solution with respect to the upper surface of the substrate W moves between the central portion and the outer circumferential portion.

When a predetermined period of time has elapsed after the start of the discharge of the drying pretreatment liquid, the dry pretreatment liquid valve 52 is closed. Thereby, the supply of the drying pretreatment liquid to the substrate W is stopped. Then, the drying pretreatment liquid nozzle moving unit 37 moves the dry pretreatment liquid nozzle 10 to the home position. Almost simultaneously with stopping the discharge of the drying pretreatment liquid, the rotation of the substrate W is decelerated as shown in Fig. 5B. The rotational speed of the substrate W is changed to a predetermined paddle speed. The paddle speed is so low that the liquid film 100 can be maintained on the substrate W even when the supply of the drying pretreatment liquid is stopped. The paddle speed is, for example, 10 rpm to 50 rpm.

Next, the solvent is evaporated from the liquid film 100 of the drying pretreatment liquid to form a solidified body 101 (see FIG. 5C) on the upper surface of the substrate W, and further sublimated the solidified body 101 to form the substrate ( A drying pretreatment liquid film removal step (step S6) for removing the liquid film 100 from the upper surface of W) is performed.

Specifically, as shown in FIG. 5C, the opposing member lifting unit 61 moves the opposing member 6 to the lower position. Then, the first gas valve 54 and the second gas valve 55 are opened. Thereby, gas, such as nitrogen gas, is blown from the opening 6b of the opposing member 6 toward the center part of the upper surface of the board|substrate W.

The solvent near the rotational center of the liquid film 100 of the drying pretreatment liquid is evaporated by blowing the gas to the center of the upper surface of the substrate W to form the solidified body 101. By continuing to evaporate the gas to the center of the upper surface of the substrate W, the solidified body 101 sublimates to dry the upper surface of the substrate W, and the solvent around the dried portion evaporates to evaporate the solidified body ( 101) is formed.

As a result, in the center of the upper surface of the substrate W, a dried region D in which the upper surface of the substrate W is dried and a solidified substance remaining region S in which the solidified substance 101 remains are formed. The liquid remaining region L in which the liquid film 100 of the drying pretreatment liquid remains is held on the side of the periphery of the upper surface of the substrate W than the solidified body remaining region S.

As shown in FIG. 6A, the dry region D formed by blowing of the gas is a circular shape centered on the rotation center of the upper surface of the substrate W when viewed in plan. The solidified body remaining region S has an annular shape surrounding the dried region D when viewed in a plan view, and is adjacent to the dried region D from the periphery side of the upper surface of the substrate W. The liquid remaining region L is an annular shape surrounding the dry region D and the solidified substance remaining region S when viewed in plan, and from the peripheral portion side of the upper surface of the substrate W to the solidified substance remaining region S. Adjacent.

In this way, by blowing the gas to the center of the upper surface of the substrate W, the drying region D, the solidified substance remaining region S, and the liquid remaining region L are in this order of the substrate W. A region coexistence state occurs in a row from the center of the upper surface of the substrate toward the peripheral edge of the upper surface of the substrate W (regional coexistence state generation process).

The substrate rotation process continues even in the drying pretreatment liquid film exclusion process. That is, the substrate rotation process is executed in parallel with the drying pretreatment liquid film removal process.

The rotation of the substrate W is accelerated almost simultaneously with the start of the gas blowing (rotation acceleration step). That is, the rotational acceleration process is executed almost simultaneously with the start of the drying pretreatment liquid film removal process. The rotational speed of the substrate W is changed to a predetermined liquid film removal speed. The liquid film removal speed is higher than the paddle speed, and is, for example, 300 rpm to 500 rpm.

The liquid film 100 on the substrate W is thinned by the rotation of the substrate W at the liquid film removal speed. Therefore, the amount of evaporation of the solvent required to form the solidified body 101 and the amount of sublimation of the solidified body 101 required to dry the upper surface of the substrate W are reduced. Thereby, the occurrence of a region coexistence state is promoted.

Further, when the heat medium valve 56 is opened, the heat medium is discharged from the lower surface nozzle 13 toward the central portion of the lower surface of the substrate W simultaneously with the start of gas spraying. The fruit discharged from the lower surface nozzle 13 lands on the lower surface of the substrate W in a rotating state, and then flows outward along the lower surface of the substrate W by centrifugal force. As a result, the heat spreads over the entire lower surface of the substrate W. The substrate W is heated by the heat supplied to the lower surface of the substrate W. The fruit heats the liquid film 100 on the substrate W through the substrate W. Therefore, evaporation of the solvent and sublimation of the solidified body 101 are promoted. As a result, the occurrence of a region coexistence state is promoted.

Even after the zone coexistence condition occurs, the gas ejection to the central portion of the upper surface of the substrate W, the rotation of the substrate W at the liquid film removal rate, and the supply of the heat medium to the central portion of the lower surface of the substrate W continue. do. Therefore, the solidified body 101 is sublimated in the solidified body remaining region S to dry the substrate W, and the portion of the liquid remaining region L close to the solidified body remaining region S The solvent of the drying pretreatment liquid is evaporated to form a new coagulated body 101. As a result, as shown in Fig. 5D, the drying region D is enlarged so that the solidified body remaining region S moves toward the periphery of the upper surface of the substrate W while maintaining the region coexistence state (dry region expansion step ).

Specifically, during the expansion of the drying region D, the gas blown to the central portion of the upper surface of the substrate W flows along the upper surface of the substrate W toward the periphery of the upper surface of the substrate W. The gas collides with the solidified body 101 and a portion adjacent to the solidified body remaining region S in the liquid film 100 of the liquid remaining region L while facing the periphery of the upper surface of the substrate W. . Thereby, the gas is supplied to both the solidified body 101 of the solidified body remaining region S and the portion of the liquid film 100 of the liquid remaining region L close to the solidified body remaining region S. It becomes (gas supply process). Thereby, the sublimation of the solidified body 101 is promoted in the solidified body remaining region S, and the solvent of the drying pretreatment solution in the portion of the liquid remaining region L close to the solidified body remaining region S Evaporation is promoted. That is, the central nozzle 12 and the gas flow path 65 function as a gas supply unit.

At a predetermined timing during the expansion of the drying region D, the first gas flow rate control valve 58 and the second gas flow rate control valve 59 are controlled to be discharged from the central nozzle 12 and the gas flow path 65. You may increase the flow rate of at least one of the gases to be used.

In addition, during the expansion of the drying region D, the entire liquid film 100 is heated through the substrate W by the heat medium supplied from the lower surface nozzle 13 to the lower surface of the substrate W. Therefore, the portion of the solidified body 101 in the solidified body remaining region S and the liquid film 100 in the liquid remaining region L, which is close to the solidified body remaining region S, is also heated (heating step). . Thereby, the sublimation of the solidified body 101 is promoted in the solidified body remaining region S, and the solvent of the drying pretreatment liquid in the portion of the liquid remaining region L close to the solidified body remaining region S Evaporation is promoted. That is, the lower surface nozzle 13 functions as a heating unit.

As shown in FIG. 6B, the dry region D has an annular shape surrounding the dry region D, while the solidified substance remaining region S is maintained, while the solidified substance remaining region S is the upper surface of the substrate W. It is enlarged to move toward the periphery of the. The dry region D is maintained in a circular shape centered on the rotation center of the upper surface of the substrate W when viewed in plan view during the expansion of the dry region D. The liquid remaining region L maintains an annular shape surrounding the dry region D during the expansion of the dry region D.

Although not shown, when the dry region D is enlarged, the outer periphery of the solidified body remaining region S then reaches to the periphery of the upper surface of the substrate W, and the liquid remaining region L disappears. Finally, as the dry region D is further enlarged, the periphery of the dry region D reaches to the periphery of the substrate W, and the solidified body remaining region S disappears. That is, the dry region D spreads over the entire upper surface of the substrate W. In other words, the liquid film 100 and the solidified body 101 are removed from the entire upper surface of the substrate W, and the upper surface of the substrate W is dried (a pre-drying liquid film exclusion step).

In this way, the substrate W is discharged from the central portion of the upper surface of the substrate W, the rotation of the substrate W at the liquid film removal rate, and the heat medium is supplied to the central portion of the lower surface of the substrate W. The liquid film 100 and the solidified body 101 of the drying pretreatment solution are excluded from the upper surface of ). Specifically, a region coexistence state occurs, and the dry region D is enlarged so that the solidified body remaining region S moves toward the periphery of the upper surface of the substrate W while maintaining the region coexistence state. In this embodiment, the gas supply unit (the center nozzle 12 and the gas flow path 65), the spin motor 23, and the lower surface nozzle 13 constitute a drying pretreatment liquid film exclusion unit.

When the liquid film 100 and the solidified body 101 are removed from the upper surface of the substrate W, the rotation of the substrate W is stopped. The guide lifting unit 74 moves all the guides 71 to the lower position. Then, the first gas valve 54, the second gas valve 55, and the heat medium valve 56 are closed. Then, the opposing member lifting unit 61 moves the opposing member 6 to the upper position.

The transfer robot CR enters the processing unit 2, lifts the processed substrate W from the chuck pin 20 of the spin chuck 5, and carries out the processing unit 2 (step S7). . The substrate W is handed over from the transfer robot CR to the transfer robot IR, and is accommodated in the carrier C by the transfer robot IR.

Fig. 7 is a schematic diagram for explaining a state of the upper surface of the substrate in the drying region expanding step.

A fine pattern 160 is formed on the upper surface of the substrate W on which the substrate processing is performed. The pattern 160 includes a fine convex structure 161 formed on an upper surface of the substrate W, and a concave portion (groove) 162 formed between adjacent structures 161. When the structure 161 has a cylindrical shape, a concave portion is formed inside it.

The structure 161 may include an insulator film or a conductor film. Further, the structure 161 may be a laminated film in which a plurality of films are stacked.

The aspect ratio of the pattern 160 is 10-50, for example. The width of the structure 161 may be about 10 nm to 45 nm, and the interval between the structures 161 may be about 10 nm to several μm. The height of the structure 161 may be, for example, about 50 nm to 5 μm.

In the drying area expansion process, the solidified body 101 gradually becomes thinner by sublimation. In the solidified body remaining region S, the longer the elapsed time after formation in the solidified body 101 is, the more the sublimation proceeds. Therefore, the thickness of the solidified body 101 is thinner as it is a portion with a longer elapsed time after formation. In other words, the solidified body 101 becomes thinner from the peripheral portion side to the central portion side on the upper surface of the substrate W. After the solidified body 101 above the tip of the structure 161 sublimates, the solidified body 101 in the concave portion 162 sublimates. All of the solidified body 101 in the concave portion 162 sublimates, so that the upper surface of the substrate W is dried. Thereby, on the upper surface of the substrate W, the portion that has been the solidified body remaining region S until now becomes the dried region D. Before all the solidified bodies 101 are sublimated, the solvent near the boundary between the solidified body remaining region S and the liquid remaining region L is evaporated to form a new solidified body 101. Therefore, the solidified body remaining region S is in the substrate W so that the positions of the liquid film 100 and the solidified body 101 move from the position indicated by the dashed-dotted line in FIG. 7 to the position indicated by the solid line in FIG. It slowly moves toward the periphery of the upper surface. As a result, the dry region D is enlarged so that the solidified body remaining region S moves toward the periphery of the upper surface of the substrate W while maintaining the region coexistence state (dry region enlargement step).

According to the first embodiment, by expanding the drying region D while maintaining the region coexistence state, the liquid film 100 for pre-drying treatment is removed from the upper surface of the substrate W. Thereby, the entire upper surface of the substrate W can be dried.

When the dry region D is enlarged, the solidified body remaining region S moves toward the periphery of the upper surface of the substrate. Therefore, in an arbitrary location on the upper surface of the substrate W, the solidified body 101 formed at that location is sublimated without waiting for formation of the solidified body 101 at other locations. Therefore, compared to the method in which sublimation of the solidified body 101 is started after the solidified body 101 is formed over the entire upper surface of the substrate W, in an arbitrary location on the upper surface of the substrate W, the solidified body 101 ) Can be kept short. In other words, the time during which the stress caused by the solidified body 101 acts on the structure 161 of the pattern 160 on the upper surface of the substrate W can be shortened.

As a result, since the influence of the stress caused by the solidified body 101 including the sublimable material can be reduced, collapse of the structure 161 of the pattern 160 can be reduced.

Further, according to the first embodiment, in the drying region expanding step, while maintaining the solidified body remaining region S in an annular shape, the solidified body remaining region S may move toward the periphery of the upper surface of the substrate W. The drying area D is enlarged. Therefore, the solidified body remaining region S moves toward the periphery of the upper surface of the substrate W while scanning the entire upper surface of the substrate W without gaps. Therefore, over the entire upper surface of the substrate W, the time during which the stress caused by the solidified body 101 acts on the pattern can be shortened. Thereby, collapse of the structure 161 of the pattern 160 over the entire upper surface of the substrate W can be reduced.

Further, according to the first embodiment, during the expansion of the dry region D, the solidified body 101 of the solidified body remaining region S and the solidified body remaining region S in the liquid remaining region L are approached. Gas is supplied from the opening 6b of the opposing member 6 toward the drying pretreatment liquid present in the portion. Therefore, sublimation of the solidified body 101 can be promoted in the solidified body remaining region S. Further, it is also possible to promote the evaporation of the solvent from the dry pretreatment liquid present in the portion of the liquid remaining region L that is close to the solidified body remaining region S, thereby promoting the formation of the solidified body 101. Thereby, it is possible to promote the movement of the solidified body remaining region S toward the peripheral edge side of the upper surface of the substrate W and the expansion of the dry region D. Accordingly, the time for the stress caused by the solidified body 101 to act on the structure 161 of the pattern 160 on the upper surface of the substrate W can be further shortened.

In addition, according to the first embodiment, the solidified body 101 of the solidified body remaining region S is passed through the substrate W by the heat discharged from the lower surface nozzle 13 during the expansion of the dry region D. Wow, the drying pretreatment liquid in the portion of the liquid remaining region L that is close to the solidified body remaining region S is heated. Therefore, the sublimation of the solidified body 101 can be promoted in the solidified body remaining region S, and the liquid film 100 present in the portion of the liquid remaining region L close to the solidified body remaining region S. Evaporation of the solvent from) can be promoted to promote the formation of the coagulum 101. Thereby, it is possible to promote the movement of the solidified body remaining region S to the peripheral edge side of the upper surface of the substrate W and the expansion of the dry region D while maintaining the region coexistence state. Accordingly, the time for the stress caused by the solidified body 101 to act on the structure 161 of the pattern 160 on the upper surface of the substrate W can be further shortened.

In addition, according to the first embodiment, the rotation of the substrate W is accelerated simultaneously with the start of the region coexistence state generation process (start of spraying of gas). That is, the substrate W is rotated at a relatively low speed (paddle speed) until just before the start of gas blowing, and is rotated at a relatively high speed (liquid film removal speed) after the start of gas blowing.

Therefore, the liquid film 100 can be maintained in a sufficiently thick state until just before the start of gas blowing. Accordingly, the entire upper surface of the substrate W can be reliably covered with the liquid film 100 of the drying pretreatment solution. On the other hand, after the start of blowing of gas, the centrifugal force acting on the liquid film 100 increases, so that the liquid film 100 of the drying pretreatment liquid becomes thinner. Therefore, since the amount of the solvent evaporated to form the solidified body 101 is reduced, the solidified body 101 can be formed quickly. Further, as the liquid film 100 of the drying pretreatment liquid becomes thinner, the solidified body 101 formed from the liquid film 100 also becomes thinner. Therefore, the solidified body 101 can be quickly sublimated. Thereby, in the drying pretreatment liquid film exclusion process, the drying area D can be rapidly expanded.

Moreover, according to the first embodiment, the replacement liquid has compatibility with both a rinse liquid and a dry pretreatment liquid. Therefore, even if the rinse liquid and the drying pretreatment liquid are not mixed, the dry pretreatment liquid is supplied to the upper surface of the substrate W after replacing the rinse liquid on the substrate W with a replacement liquid, so that the drying pretreatment liquid is applied to the upper surface of the substrate. The liquid film 100 may be formed. Therefore, the degree of freedom of selection between the rinse liquid and the drying pretreatment liquid is increased. Thereby, irrespective of the type of the rinse liquid, from the viewpoint of the influence of the stress caused by the solidified body 101 on the pattern collapse, it is possible to select a drying pretreatment liquid containing an appropriate sublimable material. Therefore, the collapse of the structure 161 of the pattern 160 can be further reduced.

<2nd embodiment>

8A is a schematic partial cross-sectional view of the periphery of a spin chuck 5 provided in a processing unit 2P provided in the substrate processing apparatus 1 according to the second embodiment. 8B is a schematic plan view of the spin base 21 provided in the processing unit 2P and members around it. In Figs. 8A and 8B and Fig. 9 to be described later, the same reference numerals as in Fig. 1 and the like are attached to the same reference numerals as in Fig. 1 and the description thereof will be omitted.

The main difference between the processing unit 2P according to the second embodiment and the processing unit 2 (see Fig. 2) of the first embodiment is a heater that can be raised and lowered between the spin base 21 and the substrate W. That is, the unit 130 is installed.

The heater unit 130 has the form of a disk-shaped hot plate. The heater unit 130 has a counter surface 130a facing from below on the lower surface of the substrate W.

The heater unit 130 includes a plate main body 131, a plurality of support pins 132, and a heater 133. The plate main body 131 is slightly smaller than the substrate W when viewed in a plan view. The plurality of support pins 132 protrude from the upper surface of the plate main body 131. The opposing surface 130a is formed by the upper surface of the plate main body 131 and the surfaces of the plurality of support pins 132.

The heater 133 may be a resistor incorporated in the plate main body 131. Electric power is supplied to the heater 133 from the heater energization unit 135 via the power supply line 134. By energizing the heater 133, the opposing surface 130a is heated. The heater energization unit 135 is, for example, a power supply device.

The heater unit 130 is supported horizontally by a support shaft 136 extending downward from the central portion of the heater unit 130.

The center line of the heater unit 130 is disposed on the rotation axis A1 of the substrate W. Even if the spin base 21 rotates, the heater unit 130 does not rotate. The outer diameter of the heater unit 130 is smaller than the diameter of the substrate W. The plurality of chuck pins 20 are disposed around the heater unit 130.

The heater unit 130 is movable up and down with respect to the spin base 21. The heater unit 130 is connected to the heater lifting unit 137 via a support shaft 136. The heater elevating unit 137 vertically elevates the heater unit 130 between an upper position (a position indicated by a solid line) and a lower position (a position indicated by a dashed-dotted line). The upper position is a contact position where the heater unit 130 contacts the lower surface of the substrate W. The lower position is a spaced position disposed between the lower surface of the substrate W and the upper surface of the spin base 21 while the heater unit 130 is separated from the substrate W.

The heater lifting unit 137 includes, for example, a ball screw mechanism (not shown) and an electric motor (not shown) that provides a driving force thereto. The heater lifting unit 137 is also referred to as a heater lifter.

The heater unit 130 may be configured to lift the substrate W from the chuck pin 20 and support the substrate W by the opposing surface 130a in the process of ascending to the upper position. To this end, the plurality of chuck pins 20 can be opened and closed between a closed state in which the substrate W is held in contact with the circumferential end of the substrate W and an open state retracted from the circumferential end of the substrate W. , In the open state, it is necessary to release the grip by being spaced apart from the circumferential end of the substrate W, while contacting the lower surface of the peripheral portion of the substrate W to support the substrate W from below.

As a configuration for opening and closing the plurality of chuck pins 20, the processing unit 2P further includes a chuck pin driving unit 140 for opening and closing the plurality of chuck pins 20. The chuck pin drive unit 140 includes, for example, a link mechanism 141 built into the spin base 21 and a drive source 142 disposed outside the spin base 21. The drive source 142 includes, for example, a ball screw mechanism (not shown) and an electric motor (not shown) that applies a driving force thereto.

The heater lifting unit 137 positions the heater unit 130 at an arbitrary position from an upper position to a lower position. In a state in which the substrate W is supported by the plurality of chuck pins 20 from below, and the holding of the substrate W by the plurality of chuck pins 20 is released, the heater unit 130 is on the upper side. When rising to the position, the plurality of support pins 132 of the heater unit 130 contact the lower surface of the substrate W, and the substrate W is supported by the heater unit 130.

After that, the substrate W is lifted by the heater unit 130 and falls upward from the plurality of chuck pins 20. When the heater unit 130 positioned at the upper position descends to the lower position, the substrate W on the heater unit 130 is placed on the plurality of chuck pins 20, and the heater unit 130 is placed on the substrate W. Falls downward from Thereby, the substrate W is water-supplied between the plurality of chuck pins 20 and the heater unit 130.

3, the controller 3 according to the second embodiment includes, in addition to the object controlled by the controller 3 according to the first embodiment, a heater energizing unit 135, a heater. It controls the lifting unit 137 and the chuck pin driving unit 140.

In the substrate processing apparatus 1 according to the second embodiment, the same substrate processing as the flowchart shown in FIG. 4 can be performed. Specifically, the substrate treatment according to the second embodiment, except that the temperature adjustment (heating) of the substrate W in the drying pretreatment liquid film exclusion process (step S6) is performed using the heater unit 130 Is substantially the same as the substrate treatment according to the first embodiment. 9 is a schematic diagram for explaining a state of a drying pretreatment liquid film removing step (step S6) of substrate processing by the substrate processing apparatus 1 according to the second embodiment.

Specifically, as shown in Fig. 9, in a state in which electric power is supplied to the heater unit 130, the heater elevating unit 137 is operated at approximately the same time as the start of supply of the gas to the upper surface of the substrate W. The unit 130 is moved from the lower position to a proximity position that is non-contactly close to the lower surface of the substrate W. As a result, heating of the substrate W is started almost simultaneously with the start of supply of gas to the upper surface of the substrate W (occurrence of a region coexistence state) by the radiant heat of the heater unit 130.

Depending on the set temperature of the heater unit 130, the substrate W may be heated by the radiant heat of the heater unit 130 even in a state in which the heater unit 130 is positioned at the lower position. In this case, heating of the substrate W is enhanced almost simultaneously with the start of supply of gas to the upper surface of the substrate W by the radiant heat of the heater unit 130.

The heating of the substrate W by the heater unit 130 continues even during the expansion of the drying region D. Thereby, the whole of the solidified body 101 and the liquid film 100 is heated through the substrate W. That is, the solidified body 101 in the solidified body remaining region S, and the liquid film 100 in the portion of the liquid remaining region L that is close to the solidified body remaining region S are also heated (heating step). In the second embodiment, the heater unit 130 functions as a heating unit.

As in the first embodiment, the rotation of the substrate W is accelerated almost simultaneously with the start of supply of the gas to the substrate W (substrate rotation process, rotation acceleration process). The rotational speed of the substrate W is changed from a predetermined paddle speed to a predetermined liquid film removal speed.

Even during the expansion of the drying region D, the gas is continuously discharged from the central nozzle 12 and the gas flow path 65, thereby allowing the gas to flow into the solidified body 101 of the solidified body remaining region S, and the liquid remaining region. In (L), it is supplied to the liquid film 100 in a portion close to the solidified body remaining region S (gas supply step).

In the second embodiment, an area coexistence state occurs due to the discharge of gas from the central nozzle 12 and the gas flow path 65, and the expansion of the drying area D is promoted. In addition, heating by the heater unit 130 and rotation of the substrate W by the spin motor 23 promote the generation of a coexistence state and the expansion of the dry region D. Accordingly, the gas supply unit (central nozzle 12 and gas flow path 65), the spin motor 23, and the heater unit 130 constitute a pre-drying liquid film exclusion unit.

The shapes of the dry region D, the solidified body remaining region S, and the liquid remaining region L, and the principle of enlargement of the dry region D are the same as those of the first embodiment, and thus these descriptions are omitted ( 6a to 7).

According to the second embodiment, the same effects as those of the first embodiment are obtained.

In the substrate processing of the second embodiment, in addition to the heater unit 130, the liquid film 100 and the solidified body 101 are heated by supplying a heat medium from the lower surface nozzle 13 to the lower surface of the substrate W. May be.

When it is not necessary to rotate the substrate W in the drying pretreatment liquid film removal step, the heater unit 130 may lift the substrate W. In this case, the chuck pin 20 needs to be in an open state.

<3rd embodiment>

10 is a schematic diagram of the periphery of a spin chuck 5 provided in a processing unit 2Q provided in the substrate processing apparatus 1 according to the third embodiment. In Figs. 10 and 11 to be described later, the same reference numerals as those in Fig. 1 and the like are attached to the configurations equivalent to those shown in Figs. 1 to 9, and the description thereof is omitted.

The processing unit 2Q according to the third embodiment is mainly different from the processing unit 2 (see FIG. 2) of the first embodiment in that the built-in heater 150 is incorporated in the counter member 6. .

As shown in FIG. 10, the built-in heater 150 is disposed inside the counter member 6. The built-in heater 150 moves up and down together with the counter member 6. The board|substrate W is arrange|positioned under the built-in heater 150. The built-in heater 150 is, for example, a resistor. Electric power is supplied to the built-in heater 150 from the heater energizing unit 152 via a power supply line (not shown). By energizing the built-in heater 150, the opposing surface 6a of the opposing member 6 is heated. The heater energization unit 152 is, for example, a power supply device.

Referring to the portion indicated by the dashed-dotted line in FIG. 3, the controller 3 according to the third embodiment controls the heater energizing unit 152 in addition to the object controlled by the controller 3 according to the first embodiment. do.

In the substrate processing apparatus 1 according to the third embodiment, the same substrate processing as in the flowchart shown in FIG. 4 is possible. Specifically, in the substrate treatment according to the third embodiment, the heating of the liquid film 100 and the solidified body 101 in the drying pretreatment liquid film exclusion process (step S6) is performed using the built-in heater 150. Except for, it is almost the same as the substrate processing according to the first embodiment. 11 is a schematic diagram for explaining a state of a pre-drying liquid film removing step (step S6) by the substrate processing apparatus 1 according to the third embodiment.

Specifically, as shown in Fig. 11, in a state where electric power is supplied to the built-in heater 150, the opposing member lifting unit 61 is almost simultaneously with the start of supply of the gas to the upper surface of the substrate W, The opposing member 6 is placed in the lower position. Thereby, heating of the liquid film 100 on the substrate W is almost simultaneously with the start of supply of gas to the upper surface of the substrate W (occurrence of a region coexistence state) by the radiant heat of the built-in heater 150. Is initiated.

The heating of the substrate W by the built-in heater 150 continues even during the expansion of the drying region D. Thereby, the whole of the solidified body 101 and the liquid film 100 is heated even during the expansion of the dry region D. That is, the portion of the solidified body 101 in the solidified body remaining region S and the liquid film 100 in the liquid remaining region L, which is close to the solidified body remaining region S, is heated (heating step). In the third embodiment, the built-in heater 150 functions as a heating unit.

During the expansion of the drying region D, by the discharge of the gas from the central nozzle 12 and the gas flow path 65, the gas is discharged to the solidified body 101 of the solidified body remaining region S, and the liquid remaining region ( In L), it is sprayed onto the liquid film 100 in a portion close to the solidified body remaining region S (gas supply step).

As in the first embodiment, the rotation of the substrate W is accelerated almost simultaneously with the start of supply of the gas to the substrate W (substrate rotation process, rotation acceleration process). The rotational speed of the substrate W is changed from a predetermined paddle speed to a predetermined liquid film removal speed.

In the third embodiment, a region coexistence state occurs due to the discharge of gas from the central nozzle 12 and the gas flow passage 65, and the expansion of the drying region D is promoted. Further, by heating by the built-in heater 150 and rotation of the substrate W by the spin motor 23, the generation of the region coexistence state and the expansion of the dry region D are promoted. Accordingly, the gas supply unit (central nozzle 12 and gas flow path 65), the spin motor 23, and the built-in heater 150 constitute a pre-drying liquid film exclusion unit.

The shapes of the dry region D, the solidified body remaining region S, and the liquid remaining region L, and the principle of enlargement of the dry region D are the same as those of the first embodiment, and thus these descriptions are omitted ( 6a to 7).

According to the third embodiment, the same effects as those of the first embodiment are obtained.

In addition, according to the third embodiment, since the built-in heater 150 is built in the counter member 6 facing the upper surface of the substrate W, the liquid film 100 held on the upper surface of the substrate W and the The solid 101 can be heated directly without passing through the substrate W. Accordingly, the liquid film 100 and the solidified body 101 held on the upper surface of the substrate W can be heated more efficiently.

In the substrate processing of the third embodiment, in addition to the built-in heater 150, the liquid film 100 and the solidified body 101 may be heated by supplying a heat medium from the lower surface nozzle 13 to the lower surface of the substrate W. do.

<4th embodiment>

12A is a schematic diagram for explaining a state of a region coexistence state generation process by the substrate processing apparatus according to the fourth embodiment. 12B is a schematic diagram for explaining a state of a drying area expansion step by the substrate processing apparatus 1 according to the fourth embodiment. In Figs. 12A and 12B, the same reference numerals as in Fig. 1 and the like are attached to the same components as those shown in Figs. 1 to 11, and the description thereof will be omitted.

The main difference between the processing unit 2R according to the fourth embodiment from the processing unit 2 (refer to FIG. 2) of the first embodiment is that it includes a moving heater 120 movable at least in the horizontal direction. The moving heater 120 is, for example, an infrared heater.

The moving heater 120 includes an infrared lamp 121 that emits infrared rays and a lamp housing 122 that accommodates the infrared lamp 121. The infrared lamp 121 is disposed in the lamp housing 122. The infrared lamp 121 includes, for example, a filament and a quartz tube accommodating the filament. The moving heater 120 is smaller than the upper surface of the substrate W when viewed in a plan view.

The moving heater 120 is moved in a horizontal direction and a vertical direction by the heater moving unit 123. The moving heater 120 can move between a center position and a home position (retract position). When the moving heater 120 is positioned at the center position, it faces the central portion of the upper surface of the substrate W and heats the central portion of the upper surface of the substrate W.

The movable heater 120 does not face the upper surface of the substrate W when positioned at the home position, but is positioned outside the processing cup 7 when viewed in a plan view. The moving heater 120 can approach the upper surface of the substrate W or retreat upward from the upper surface of the substrate W by moving in the vertical direction.

The heater moving unit 123 includes, for example, an arm 123a that supports the moving heater 120 and extends horizontally, and an arm driving unit 123b that drives the arm 123a. The arm driving unit 123b includes a rotation shaft (not shown) coupled to the arm 123a and extending in a vertical direction, and a rotation shaft driving unit (not shown) that lifts or rotates the rotation shaft.

The rotation shaft drive unit swings the arm 123a by rotating the rotation shaft around a vertical rotation axis. Further, the rotation shaft drive unit moves the arm 123a up and down by raising and lowering the rotation shaft along the vertical direction. According to the swinging and lifting of the arm 123a, the moving heater 120 moves in a horizontal direction and a vertical direction.

The controller 3 according to the fourth embodiment controls the heater moving unit 123 in addition to the object controlled by the controller 3 according to the first embodiment (see FIG. 3 ).

In the substrate processing apparatus 1 according to the fourth embodiment, the same substrate processing as in the flowchart shown in FIG. 4 is possible. Specifically, in the substrate treatment according to the fourth embodiment, the occurrence of the region coexistence state and the expansion of the drying region D in the drying pretreatment liquid film exclusion process (step S6) are mainly due to heating by the mobile heater 120. It is substantially the same as that of the substrate treatment according to the first embodiment, except for the point performed by the method. Hereinafter, the drying pretreatment liquid film exclusion process of the substrate processing according to the fourth embodiment will be described.

12A, the heater moving unit 123 moves the moving heater 120 to the center position. As the moving heater 120 moves to the center position, the portion (central portion of the liquid film 100) located in the center of the upper surface of the substrate W in the liquid film 100 of the drying pretreatment liquid is radiated heat of the moving heater 120 Begins to be heated by

Almost simultaneously with the start of heating of the liquid film 100 by the moving heater 120, the rotation of the substrate W is accelerated (rotation acceleration step). The rotational speed of the substrate W is changed from the paddle speed to the liquid film removal speed, similar to the substrate processing according to the first embodiment.

As the central portion of the liquid film 100 of the drying pretreatment liquid is heated, the solvent near the rotation center of the liquid film 100 is evaporated to form a solidified body 101. As the heating of the central portion of the liquid film 100 is continued, as shown in Fig. 12A, the solidified body 101 sublimates to dry the upper surface of the substrate W, and the dried portion on the upper surface of the substrate W The solvent around is evaporated to form a coagulated body 101.

In this way, by heating the central portion of the liquid film 100 of the drying pretreatment liquid with the moving heater 120, a region coexistence state occurs (regional coexistence state generation process).

The liquid film 100 on the substrate W is thinned by the rotation of the substrate W at the liquid film removal speed. Therefore, the amount of evaporation of the solvent required to form the solidified body 101 and the amount of sublimation of the solidified body 101 required to dry the upper surface of the substrate W are reduced. Further, by heating the liquid film 100 and the solidified body 101 by the moving heater 120, the evaporation of the solvent and the sublimation of the solidified body 101 are promoted.

Even after the region coexistence state occurs, heating by the moving heater 120 and rotation of the substrate W at the liquid film removal speed continue. Therefore, the dry region D is enlarged so that the solidified body remaining region S moves toward the upper surface of the substrate W while maintaining the region coexistence state (dry region enlargement step).

In detail, as shown in FIG. 12B, with the expansion of the drying region D, the heater moving unit 123 moves the moving heater 120 toward the periphery of the upper surface of the substrate W (heater moving fair). For example, the moving heater 120 moves so as to face the solidified body remaining region S. Therefore, during the expansion of the drying region D, the moving heater 120 is the solidified body 101 of the solidified body remaining region S, and a peripheral portion thereof, that is, the liquid film of the liquid remaining region L. In 100), a portion close to the solidified body remaining region S is heated (heating step).

Since the substrate W is rotating, the movable heater 120 includes the solidified body 101 of the solidified body remaining region S and the liquid remaining region ( In the liquid film 100 of L), a portion that is close to the solidified body remaining region S can be heated. In the fourth embodiment, the moving heater 120 functions as a heating unit.

In the fourth embodiment, the region coexistence state occurs due to heating by the mobile heater 120, and the expansion of the dry region D is promoted. Further, the rotation of the substrate W by the spin motor 23 promotes the occurrence of the coexistence state and the expansion of the dry region D. The moving heater 120 and the spin motor 23 constitute a pre-drying liquid film exclusion unit.

The shapes of the dry region D, the solidified body remaining region S, and the liquid remaining region L, and the principle of enlargement of the dry region D are the same as those of the first embodiment, and thus these descriptions are omitted ( 6a to 7).

According to the fourth embodiment, the same effects as those of the first embodiment are exhibited.

In the fourth embodiment, by heating the central portion of the liquid film 100 of the drying pretreatment liquid, the drying region D and the solidified body remaining region S are formed in the central portion of the liquid film 100. That is, by heating the central portion of the liquid film 100 of the drying pretreatment liquid, a region coexistence state occurs. In the region coexistence state generation process, the rotation of the substrate W is accelerated almost simultaneously with the start of heating of the central portion of the liquid film 100.

Therefore, until just before the start of heating of the central portion of the liquid film 100, the liquid film 100 can be kept in a sufficiently thick state. Accordingly, the entire upper surface of the substrate W can be reliably covered with the liquid film 100 of the drying pretreatment solution. On the other hand, after the heating of the central portion of the liquid film 100 is started, the centrifugal force acting on the liquid film 100 increases, so that the liquid film 100 of the drying pretreatment liquid becomes thinner. Therefore, since the amount of the solvent evaporated to form the solidified body 101 is reduced, the solidified body 101 can be formed quickly. Further, as the liquid film 100 of the drying pretreatment liquid becomes thinner, the solidified body 101 formed from the liquid film 100 also becomes thinner. Therefore, in the drying area expansion process, the solidified body 101 can be quickly sublimated. Thereby, the dry area D can be expanded quickly. Accordingly, the time during which the stress caused by the solidified body 101 acts on the structure 161 (refer to FIG. 7) of the pattern 160 on the upper surface of the substrate W can be further shortened.

In addition, according to the fourth embodiment, with the expansion of the drying region D, the moving heater 120 moves toward the periphery of the upper surface of the substrate W. Therefore, while the solidified solid remaining region S moves toward the periphery of the upper surface of the substrate W due to the expansion of the dry region D, the solidified solid remaining region S is more than the central part of the upper surface of the substrate W. It is possible to maintain the moving heater 120 in a position close to. Therefore, during the expansion of the drying region D, the solidified body 101 can be efficiently heated. Thereby, the sublimation of the solidified body 101 can be further promoted in the solidified body remaining region S. In addition, the evaporation of the solvent from the drying pretreatment solution present in the portion of the liquid film 100 in the liquid remaining region L close to the solidified substance remaining region S is promoted to further promote the formation of the solidified body 101. You may. Therefore, the expansion of the dry region D can be further promoted.

In the substrate processing of the fourth embodiment, the expansion of the drying region D is promoted by heating by the movable heater 120 and rotation of the substrate W. However, during the expansion of the drying region D, gas may be supplied to the upper surface of the substrate W from at least one of the central nozzle 12 and the gas flow passage 65 (gas supply unit, see Fig. 2) ( Gas supply process). Thereby, the expansion of the dry area D is further promoted.

In the substrate processing of the fourth embodiment, in addition to the moving heater 120, the liquid film 100 is supplied from the lower surface nozzle 13 (heating unit, see Fig. 2) to the lower surface of the substrate W. And the solidified body 101 may be heated (heating step).

<Fifth embodiment>

13A is a schematic diagram for explaining a state of a region coexistence state generation process by the substrate processing apparatus 1 according to the fifth embodiment. 13B is a schematic diagram for explaining a state of a drying area expansion step by the substrate processing apparatus according to the fifth embodiment. In Figs. 13A and 13B, the same reference numerals as in Fig. 1 and the like are denoted by the same reference numerals as those shown in Figs. 1 to 12B, and description thereof will be omitted.

The processing unit 2S according to the fifth embodiment is mainly different from the processing unit 2 (see Fig. 2) of the first embodiment, and it is movable at least in the horizontal direction, and the gas is moved toward the upper surface of the substrate W. It includes a moving gas nozzle 14 capable of discharging.

The moving gas nozzle 14 is moved in the horizontal direction and the vertical direction by the gas nozzle moving unit 39. The moving gas nozzle 14 can move between a center position and a home position (retract position).

The moving gas nozzle 14 faces the rotation center of the upper surface of the substrate W when positioned at the center position. When the moving gas nozzle 14 is positioned at the home position, it does not face the upper surface of the substrate W, but is positioned outside the processing cup 7 when viewed in a plan view. The moving gas nozzle 14 can approach the upper surface of the substrate W or retreat upward from the upper surface of the substrate W by moving in the vertical direction.

The gas nozzle moving unit 39 includes, for example, an arm 39a supporting the moving gas nozzle 14 and extending horizontally, and an arm driving unit 39b that drives the arm 39a. The arm drive unit 39b includes a rotation shaft (not shown) coupled to the arm 39a and extending along a vertical direction, and a rotation shaft drive unit (not shown) that lifts or rotates the rotation shaft.

The rotation shaft drive unit swings the arm 39a by rotating the rotation shaft around a vertical rotation axis. Further, the rotation shaft drive unit moves the arm 39a up and down by raising and lowering the rotation shaft along the vertical direction. As the arm 39a swings and rises, the moving gas nozzle 14 moves in the horizontal direction and the vertical direction.

The moving gas nozzle 14 is connected to a moving gas pipe 47 that guides the gas to the moving gas nozzle 14. When the moving gas valve 57 interposed in the moving gas pipe 47 is opened, gas is continuously discharged downward from the discharge port of the moving gas nozzle 14.

The gas discharged from the moving gas nozzle 14 is, for example, an inert gas such as _{nitrogen gas (N 2 ).} The gas discharged from the moving gas nozzle 14 may be air.

The controller 3 according to the fifth embodiment controls the moving gas valve 57 and the gas nozzle moving unit 39 in addition to the object controlled by the controller 3 according to the first embodiment (see FIG. 3 ). ).

In the substrate processing apparatus 1 according to the fifth embodiment, the same substrate processing as in the flowchart shown in FIG. 4 is possible. Specifically, the substrate treatment according to the fifth embodiment includes the formation of a dry region (D) and a solidified body remaining region (S) in the drying pretreatment liquid film exclusion step (step S6), and the expansion of the dry region (D). A is substantially the same as the substrate treatment according to the first embodiment, except that it is mainly performed by blowing of gas from the moving gas nozzle 14. Hereinafter, the drying pretreatment liquid film exclusion process of the substrate processing according to the fifth embodiment will be described.

13A, the gas nozzle moving unit 39 moves the moving gas nozzle 14 to the center position. With the moving gas nozzle 14 positioned at the center position, the moving gas valve 57 is opened. Thereby, gas is discharged from the discharge port of the moving gas nozzle 14 toward the upper surface of the substrate W (gas discharge step). The gas discharged from the moving gas nozzle 14 is blown out to the center of the upper surface of the substrate W, thereby generating a region coexistence state.

The rotation of the substrate W is accelerated almost simultaneously with the start of supply of the gas from the moving gas nozzle 14 to the substrate W (substrate rotation process, rotation acceleration process). The rotational speed of the substrate W is changed from a predetermined paddle speed to a predetermined liquid film removal speed.

The heat medium valve 56 is opened at substantially the same timing as the moving gas valve 57 opening. Thereby, almost simultaneously with the start of discharge of the gas from the moving gas nozzle 14, the discharge of the heat medium from the lower surface nozzle 13 is started. The liquid film 100 on the substrate W is heated through the substrate W by supplying the heat medium from the lower surface nozzle 13 to the lower surface of the substrate W. Thereby, the occurrence of a region coexistence state is promoted.

And, as shown in FIG. 13B, with the expansion of the drying area D, the gas nozzle moving unit 39 moves the moving gas nozzle 14 toward the periphery of the upper surface of the substrate W ( Nozzle movement process). For example, the moving gas nozzle 14 is moved so that the discharge port of the moving gas nozzle 14 faces the solidified body remaining region S. Therefore, during the expansion of the drying region D, the gas discharged from the discharge port of the moving gas nozzle 14 is supplied to the solidified body 101 in the solidified body remaining region S. The gas discharged from the discharge port of the moving gas nozzle 14 is directly or indirectly in the peripheral portion of the solidified body remaining region S, that is, the solidified body remaining region S in the liquid film 100 of the liquid remaining region L. It is also supplied to the portion close to) (gas supply process).

Since the moving gas nozzle 14 rotates the substrate W, the solidified body 101 of the solidified body remaining region S and the liquid remaining region around the entire circumference in the rotational direction around the rotation axis A1 In the liquid film 100 of (L), gas can be blown out to a portion that is close to the region S where the solidified material remains. Therefore, the moving gas nozzle 14 functions as a gas supply unit.

Even during the expansion of the drying region D, the supply of the heat medium from the lower surface nozzle 13 to the lower surface of the substrate W continues. Therefore, in the solidified body 101 of the solidified body remaining region S and the liquid film 100 of the liquid remaining region L, the portion close to the solidified body remaining region S is heated (heating step). The lower surface nozzle 13 functions as a heating unit.

In the fifth embodiment, by supplying gas from the moving gas nozzle 14 to the substrate W, a region coexistence state occurs, and the expansion of the dry region D is promoted. In addition, by the supply of the heat medium from the lower surface nozzle 13 to the substrate W, and the rotation of the substrate W by the spin motor 23, the occurrence of the coexistence of the regions and the expansion of the dry region D are prevented. Is being promoted. Accordingly, the moving gas nozzle 14, the spin motor 23, and the lower surface nozzle 13 constitute a pre-drying liquid film exclusion unit.

Using a dry pretreatment solution containing camphor with a mass percent concentration of 0.62 wt% or more and 2.06 wt% or less as a solute (sublimable material) and IPA as a solvent, a solidified body ( When the solidified body 101 was sublimated after forming 101), the collapse rate of the structure 161 of the pattern 160 was 83% or less. In addition, by using a dry pretreatment solution containing camphor having a mass percent concentration of 1.04 wt% or more and 1.25 wt% or less as a solute and IPA as a solvent, the solidified body 101 was formed over the entire upper surface of the substrate W. When the solidified body 101 was sublimated after formation, the collapse rate of the structure 161 of the pattern 160 was 20% or less.

Therefore, after the supply of gas toward the center of the substrate W is started, the movement of the moving gas nozzle 14 is started at a timing when the mass percent concentration of camphor in the dry pretreatment solution becomes 0.62 wt% or more and 2.06 wt% or less. It is desirable. If so, the collapse rate of the structure 161 of the pattern 160 can be reduced. It is more preferable that the movement of the moving gas nozzle 14 is started at the timing when the mass percent concentration of camphor in the dry pretreatment liquid becomes 1.04 wt% or more and 1.25 wt% or less. If so, the collapse rate of the pattern 160 can be further reduced.

The shapes of the dry region D, the solidified body remaining region S, and the liquid remaining region L, and the principle of enlargement of the dry region D are the same as those of the first embodiment, and thus these descriptions are omitted ( 6a to 7).

According to the fifth embodiment, the same effects as those of the first embodiment are obtained.

In addition, according to the fifth embodiment, with the expansion of the drying region D, the moving gas nozzle 14 moves toward the periphery of the upper surface of the substrate W. Therefore, while the solidified body remaining region S moves toward the periphery of the upper surface of the substrate W due to the enlargement of the dry region D, the moving gas nozzle 14 is located at a position close to the solidified body remaining region S. ) Can be maintained. Therefore, during the expansion of the drying region D, the gas can be efficiently supplied to the solidified body remaining region S. Therefore, the sublimation of the solidified body 101 can be further promoted in the solidified body remaining region S. In addition, evaporation of the solvent from the portion of the liquid film 100 in the liquid remaining region L close to the solidified body remaining region S can be promoted to further promote the formation of the solidified body 101. Thereby, the expansion of the dry area D can be further promoted. Accordingly, the time during which the stress caused by the solidified body 101 acts on the structure 161 (refer to FIG. 7) of the pattern 160 on the upper surface of the substrate W can be further shortened.

In the substrate processing of the fifth embodiment, the expansion of the drying region D is performed by supplying a gas from the moving gas nozzle 14 and rotating the substrate W, and from the lower surface nozzle 13 to the lower surface of the substrate W. It is promoted by the supply of the fruit of the. However, during the expansion of the drying region D, the gas may be supplied to the upper surface of the substrate W from at least one of the central nozzle 12 and the gas flow passage 65 (see FIG. 2 ). Thereby, the expansion of the dry area D is further promoted.

In the substrate processing according to the fifth embodiment, it is assumed that a region coexistence state occurs due to the gas discharged from the moving gas nozzle 14 and the drying region D is enlarged. However, the gas discharged from at least one of the central nozzle 12 and the gas flow path 65 may generate a region coexistence state.

This invention is not limited to the embodiment described above, but can be implemented in another form.

For example, in the above-described embodiment, the chemical liquid nozzle 8, the rinse liquid nozzle 9, the drying pretreatment liquid nozzle 10, and the displacement liquid nozzle 11 are moving nozzles. However, the chemical liquid nozzle 8, the rinse liquid nozzle 9, the drying pretreatment liquid nozzle 10, and the displacement liquid nozzle 11 may be fixed nozzles with fixed positions in the horizontal and vertical directions. Moreover, at least one of a chemical liquid, a rinse liquid, a drying pretreatment liquid, and a replacement liquid may be comprised so that it may be discharged from the central nozzle 12.

Further, for example, the gas discharged from the central nozzle 12, the gas flow path 65 and the moving gas nozzle 14 may be a high-temperature gas such as a high-temperature inert gas or high-temperature air. If so, evaporation of the solvent or sublimation of the solidified body 101 can be promoted.

In addition, in each of the above-described embodiments, the rotation of the substrate W is reduced to a predetermined paddle speed almost at the same time as stopping the discharging of the drying pretreatment liquid. However, after discharging the drying pretreatment liquid, the rotation of the substrate W may not be decelerated, and a gas may be supplied toward the center of the upper surface of the substrate W to generate a zone coexistence state. If so, the time required to remove the liquid film 100 of the drying treatment liquid from the upper surface of the substrate W can be shortened.

In addition, in each of the above-described embodiments, the substrate processing apparatus 1 may be provided with an imaging unit such as a camera for observing the state of the upper surface of the substrate W. Based on the result of observing the time of formation and sublimation of the solidified body 101 using the imaging unit, the flow rate of the gas supplied to the upper surface of the substrate W, the moving gas nozzle 14 or the moving heater 120 ) Movement speed may be controlled by feedback.

Although the embodiments of the present invention have been described in detail, these are only specific examples used to clarify the technical content of the present invention, and the present invention should not be construed as being limited to these specific examples, but the scope of the present invention is It is limited only by the scope of the appended claims.

This application corresponds to patent application 2018-163869 filed with the Japan Intellectual Property Office on August 31, 2018, and the entire disclosure of this application is incorporated herein by reference.

1: substrate processing apparatus
12: central nozzle (gas supply unit, drying pretreatment liquid film exclusion unit)
13: Bottom nozzle (heating unit, drying pretreatment liquid film exclusion unit)
14: moving gas nozzle (gas supply unit, dry pretreatment liquid film exclusion unit)
23: spin motor (substrate rotation unit, drying pretreatment liquid film exclusion unit)
65: gas flow path (gas supply unit, dry pretreatment liquid film exclusion unit)
100: liquid film (liquid film of dry pretreatment liquid)
101: coagulant
120: mobile heater (heating unit, drying pretreatment liquid film exclusion unit)
130: heater unit (heating unit, drying pretreatment liquid film exclusion unit)
150: built-in heater (heating unit, drying pretreatment liquid film exclusion unit)
160: pattern A1: rotation axis (vertical axis)
D: Drying area L: Liquid remaining area
S: solidified body remaining area W: substrate

Claims (14)

The drying pretreatment covering the surface of the substrate by supplying a drying pretreatment solution, which is a solution containing a sublimable material that changes from solid to gas without passing through a liquid, and a solvent that dissolves the sublimable material to the surface of the patterned substrate A drying pretreatment liquid film forming step of forming a liquid film of liquid on the surface of the substrate,
Dry pretreatment liquid film for removing the liquid film from the surface of the substrate by evaporating the solvent from the liquid film to form a solidified body containing the sublimable material on the surface of the substrate, and sublimating the solidified body Including an exclusion process,
In the drying pretreatment liquid film exclusion process, a dry region in which the surface of the substrate is dried by sublimation of the solidified substance, a solidified substance remaining region in which the solidified substance remains, and a liquid remaining region in which the liquid film remains, are in this order of the substrate. A region coexistence state generation process of generating a region coexistence state that is arranged from the center of the surface toward the periphery of the surface of the substrate, and the solidified solid remaining region moves toward the periphery of the surface of the substrate while maintaining the region coexistence state. A method of treating a substrate comprising a drying area expanding step of expanding the drying area. The method according to claim 1,
The drying area expansion process expands the drying area so that the solidified material remaining area moves toward the periphery of the surface of the substrate while maintaining the solidified material remaining area in an annular shape surrounding the drying area when viewed in a plan view. A method for treating a substrate, including a step of doing so. The method according to claim 1 or 2,
During the expansion of the drying region, a gas supply step of supplying gas to the solidified body in the solidified body remaining region and the drying pretreatment liquid at a portion in the liquid remaining region adjacent to the solidified body remaining region is further provided. Containing, a substrate processing method. The method of claim 3,
The gas supply process includes a gas discharge process of discharging gas from a nozzle toward the surface of the substrate, and a nozzle movement process of moving the nozzle toward the periphery of the surface of the substrate as the drying region is enlarged. That, the substrate processing method. The method according to any one of claims 1 to 4,
The substrate further comprising a heating step of heating the solidified body in the solidified body remaining region and the drying pretreatment liquid at a portion in the liquid remaining region adjacent to the solidified body remaining region during the expansion of the drying region Processing method. The method of claim 5,
The heating step includes a heater moving step of moving a heater toward a periphery of the surface of the substrate as the drying region is expanded. The method according to any one of claims 1 to 6,
In parallel with the drying pretreatment liquid film forming step and the drying pretreatment liquid film exclusion step, further comprising a substrate rotation step of rotating the substrate around a vertical axis passing through the central portion of the surface of the substrate,
The substrate processing method, wherein the substrate rotation step includes a rotation acceleration step of accelerating the rotation of the substrate at the same time as the start of the drying pretreatment liquid film exclusion step. The method of claim 7,
The region coexistence state generating process includes a step of forming the dried region and the solidified body remaining region in the center of the liquid film by blowing gas toward the center of the surface of the substrate,
The substrate processing method, wherein the rotation acceleration step includes a step of accelerating the rotation of the substrate at the same time as the start of gas blowing in the region coexistence state generation step. The method of claim 7,
The region coexistence state generating step includes a step of forming the dried region and the solidified body remaining region in a central portion of the liquid film by heating a central portion of the liquid film,
The substrate processing method, wherein the rotation acceleration step includes a step of accelerating the rotation of the substrate at the same time as starting heating of the central portion of the liquid film in the region coexistence state generating step. The method according to any one of claims 1 to 9,
A rinse liquid supply process of supplying a rinse liquid to the surface of the substrate,
Further comprising a replacement step of replacing the rinse liquid on the surface of the substrate with the replacement liquid by supplying a replacement liquid compatible with both the rinse liquid and the drying pretreatment liquid to the surface of the substrate,
The substrate processing method, wherein the drying pretreatment liquid film forming step includes a step of supplying the drying pretreatment liquid to the surface of the substrate after the rinse liquid is replaced by the replacement liquid. The drying pretreatment covering the surface of the substrate by supplying a drying pretreatment solution, which is a solution containing a sublimable material that changes from solid to gas without passing through a liquid, and a solvent that dissolves the sublimable material to the surface of the patterned substrate A drying pretreatment liquid film forming unit for forming a liquid film of liquid on the surface of the substrate,
Dry pretreatment liquid film for removing the liquid film from the surface of the substrate by evaporating the solvent from the liquid film to form a solidified body containing the sublimable material on the surface of the substrate, and sublimating the solidified body Including an exclusion unit,
The drying pretreatment liquid film exclusion unit includes a dry region in which the surface of the substrate is dried by sublimation of the solidified body, a solidified body remaining region in which the solidified body remains, and a liquid remaining region in which the liquid film remains, in this order. To generate a coexistence state of regions extending from the central portion of the surface toward the periphery of the surface of the substrate, and enlarge the drying region so that the residual region of the solidified material moves toward the periphery of the surface of the substrate while maintaining the coexistence of the regions. , Substrate processing device. The method of claim 11,
The drying pretreatment liquid film exclusion unit, during the expansion of the drying region, directs gas toward the solidified body in the solidified body remaining region and the drying pretreatment liquid at a portion in the liquid remaining region adjacent to the solidified body remaining region. A substrate processing apparatus comprising a gas supply unit to supply. The method according to claim 11 or 12,
The substrate processing apparatus, wherein the pre-drying liquid film exclusion unit includes a substrate rotating unit that rotates the substrate around a vertical axis passing through a central portion of the surface of the substrate during expansion of the drying region. The method according to any one of claims 11 to 13,
Heating in which the drying pretreatment liquid film exclusion unit heats the solidified body in the solidified body remaining region and the drying pretreatment liquid at a portion in the liquid remaining region adjacent to the solidified body remaining region during the expansion of the drying region A substrate processing apparatus comprising a unit.

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