TWI789449B - 基板之電漿蝕刻方法 - Google Patents

基板之電漿蝕刻方法 Download PDF

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Publication number
TWI789449B
TWI789449B TW107138706A TW107138706A TWI789449B TW I789449 B TWI789449 B TW I789449B TW 107138706 A TW107138706 A TW 107138706A TW 107138706 A TW107138706 A TW 107138706A TW I789449 B TWI789449 B TW I789449B
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TW
Taiwan
Prior art keywords
film
metal
plasma
gas
etching
Prior art date
Application number
TW107138706A
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English (en)
Chinese (zh)
Other versions
TW201923900A (zh
Inventor
勝沼隆幸
Original Assignee
日商東京威力科創股份有限公司
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Publication of TW201923900A publication Critical patent/TW201923900A/zh
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Publication of TWI789449B publication Critical patent/TWI789449B/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/73—Etching of wafers, substrates or parts of devices using masks for insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155—Frequency modulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
    • H10P50/268—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas of silicon-containing layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/71—Etching of wafers, substrates or parts of devices using masks for conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)
TW107138706A 2017-11-07 2018-11-01 基板之電漿蝕刻方法 TWI789449B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017-214313 2017-11-07
JP2017214313A JP6833657B2 (ja) 2017-11-07 2017-11-07 基板をプラズマエッチングする方法

Publications (2)

Publication Number Publication Date
TW201923900A TW201923900A (zh) 2019-06-16
TWI789449B true TWI789449B (zh) 2023-01-11

Family

ID=66328877

Family Applications (1)

Application Number Title Priority Date Filing Date
TW107138706A TWI789449B (zh) 2017-11-07 2018-11-01 基板之電漿蝕刻方法

Country Status (5)

Country Link
US (2) US10854470B2 (enExample)
JP (1) JP6833657B2 (enExample)
KR (2) KR102762193B1 (enExample)
CN (2) CN109755123B (enExample)
TW (1) TWI789449B (enExample)

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* Cited by examiner, † Cited by third party
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JP7308110B2 (ja) * 2019-09-17 2023-07-13 東京エレクトロン株式会社 シリコン酸化膜をエッチングする方法及びプラズマ処理装置
GB201919220D0 (en) * 2019-12-23 2020-02-05 Spts Technologies Ltd Method of plasma etching
JP7557969B2 (ja) * 2020-01-29 2024-09-30 東京エレクトロン株式会社 エッチング方法、基板処理装置、及び基板処理システム
CN111739795B (zh) * 2020-06-24 2023-08-18 北京北方华创微电子装备有限公司 刻蚀方法
US12142459B2 (en) * 2020-09-08 2024-11-12 Applied Materials, Inc. Single chamber flowable film formation and treatments
JP7709871B2 (ja) * 2020-09-16 2025-07-17 東京エレクトロン株式会社 エッチング方法及びプラズマ処理装置
US20220165578A1 (en) * 2020-11-25 2022-05-26 Tokyo Electron Limited Substrate processing method and substrate processing apparatus
JP7603635B2 (ja) * 2021-07-02 2024-12-20 東京エレクトロン株式会社 エッチング方法及びプラズマ処理装置
US12635430B2 (en) * 2022-03-02 2026-05-19 Hitachi High-Tech Corporation Plasma processing method
KR102749257B1 (ko) * 2022-04-11 2025-01-03 주식회사 히타치하이테크 플라스마 처리 방법
KR102972006B1 (ko) * 2022-04-18 2026-06-04 주식회사 히타치하이테크 플라스마 처리 방법
KR102815089B1 (ko) * 2022-04-28 2025-06-04 주식회사 히타치하이테크 에칭 방법
US12009218B2 (en) * 2022-05-06 2024-06-11 Applied Materials, Inc. Pulsed etch process
JP7756056B2 (ja) * 2022-08-25 2025-10-17 東京エレクトロン株式会社 エッチング方法及びプラズマ処理装置
JP2024151446A (ja) 2023-04-12 2024-10-25 信越化学工業株式会社 オニウム塩、レジスト組成物、及びパターン形成方法
JP2024162373A (ja) 2023-05-10 2024-11-21 信越化学工業株式会社 化学増幅ポジ型レジスト組成物及びレジストパターン形成方法
JP2025152739A (ja) * 2024-03-28 2025-10-10 株式会社Kokusai Electric 処理方法、半導体装置の製造方法、プログラム及び処理装置

Citations (2)

* Cited by examiner, † Cited by third party
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JP2012142495A (ja) * 2011-01-05 2012-07-26 Ulvac Japan Ltd プラズマエッチング方法及びプラズマエッチング装置
US20170178899A1 (en) * 2015-12-18 2017-06-22 Lam Research Corporation Directional deposition on patterned structures

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4153606B2 (ja) * 1998-10-22 2008-09-24 東京エレクトロン株式会社 プラズマエッチング方法およびプラズマエッチング装置
JP4176365B2 (ja) 2002-03-25 2008-11-05 東京エレクトロン株式会社 プラズマエッチング方法
US6942813B2 (en) * 2003-03-05 2005-09-13 Applied Materials, Inc. Method of etching magnetic and ferroelectric materials using a pulsed bias source
TWI478234B (zh) * 2011-03-04 2015-03-21 東京威力科創股份有限公司 氮化矽膜之蝕刻方法
JP6127535B2 (ja) * 2012-02-03 2017-05-17 大日本印刷株式会社 ナノインプリント用テンプレートの製造方法
JP2014225501A (ja) * 2013-05-15 2014-12-04 東京エレクトロン株式会社 プラズマエッチング方法及びプラズマエッチング装置
JP6185305B2 (ja) * 2013-06-28 2017-08-23 東京エレクトロン株式会社 プラズマエッチング方法およびプラズマエッチング装置
JP6512962B2 (ja) * 2014-09-17 2019-05-15 東京エレクトロン株式会社 プラズマ処理装置
US9806252B2 (en) * 2015-04-20 2017-10-31 Lam Research Corporation Dry plasma etch method to pattern MRAM stack
US9543148B1 (en) * 2015-09-01 2017-01-10 Lam Research Corporation Mask shrink layer for high aspect ratio dielectric etch
US9824896B2 (en) * 2015-11-04 2017-11-21 Lam Research Corporation Methods and systems for advanced ion control for etching processes
JP2017098323A (ja) * 2015-11-19 2017-06-01 東京エレクトロン株式会社 プラズマエッチング方法
US9991128B2 (en) * 2016-02-05 2018-06-05 Lam Research Corporation Atomic layer etching in continuous plasma
US10629435B2 (en) * 2016-07-29 2020-04-21 Lam Research Corporation Doped ALD films for semiconductor patterning applications
US10128116B2 (en) * 2016-10-17 2018-11-13 Lam Research Corporation Integrated direct dielectric and metal deposition
US11062897B2 (en) * 2017-06-09 2021-07-13 Lam Research Corporation Metal doped carbon based hard mask removal in semiconductor fabrication

Patent Citations (2)

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Publication number Priority date Publication date Assignee Title
JP2012142495A (ja) * 2011-01-05 2012-07-26 Ulvac Japan Ltd プラズマエッチング方法及びプラズマエッチング装置
US20170178899A1 (en) * 2015-12-18 2017-06-22 Lam Research Corporation Directional deposition on patterned structures

Also Published As

Publication number Publication date
CN109755123A (zh) 2019-05-14
US20210050222A1 (en) 2021-02-18
JP6833657B2 (ja) 2021-02-24
US10854470B2 (en) 2020-12-01
KR20250016413A (ko) 2025-02-03
KR102762193B1 (ko) 2025-02-07
TW201923900A (zh) 2019-06-16
US20190139781A1 (en) 2019-05-09
CN116705602A (zh) 2023-09-05
KR20190051817A (ko) 2019-05-15
US12154792B2 (en) 2024-11-26
CN109755123B (zh) 2023-08-11
JP2019087626A (ja) 2019-06-06

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