TWI788517B - 化學機械研磨用組成物及研磨方法 - Google Patents
化學機械研磨用組成物及研磨方法 Download PDFInfo
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- TWI788517B TWI788517B TW108103623A TW108103623A TWI788517B TW I788517 B TWI788517 B TW I788517B TW 108103623 A TW108103623 A TW 108103623A TW 108103623 A TW108103623 A TW 108103623A TW I788517 B TWI788517 B TW I788517B
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- Prior art keywords
- chemical mechanical
- mechanical polishing
- composition
- polishing
- titanium oxide
- Prior art date
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- 238000005498 polishing Methods 0.000 title claims abstract description 195
- 239000000126 substance Substances 0.000 title claims abstract description 110
- 239000000203 mixture Substances 0.000 title claims abstract description 105
- 238000000034 method Methods 0.000 title claims abstract description 29
- 239000002245 particle Substances 0.000 claims abstract description 96
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims abstract description 83
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims abstract description 80
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims abstract description 66
- 229910052707 ruthenium Inorganic materials 0.000 claims abstract description 66
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- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 14
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims abstract description 10
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 10
- 239000007800 oxidant agent Substances 0.000 claims description 17
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Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F3/00—Brightening metals by chemical means
- C23F3/04—Heavy metals
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Chemical & Material Sciences (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
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| JP2018018155 | 2018-02-05 | ||
| JP2018018154 | 2018-02-05 | ||
| JP2018-018153 | 2018-02-05 | ||
| JP2018-018155 | 2018-02-05 | ||
| JP2018018153 | 2018-02-05 | ||
| JP2018-018154 | 2018-02-05 |
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| TW201942317A TW201942317A (zh) | 2019-11-01 |
| TWI788517B true TWI788517B (zh) | 2023-01-01 |
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| TW108103416A TWI795521B (zh) | 2018-02-05 | 2019-01-30 | 化學機械研磨用組成物及研磨方法 |
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| TW108103419A TW201943829A (zh) | 2018-02-05 | 2019-01-30 | 化學機械研磨用組成物及研磨方法 |
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| WO (1) | WO2019151144A1 (ja) |
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| JP6874231B1 (ja) * | 2019-09-27 | 2021-05-19 | 株式会社トクヤマ | ＲｕＯ４ガスの発生抑制剤及びＲｕＯ４ガスの発生抑制方法 |
| TWI810469B (zh) | 2019-09-27 | 2023-08-01 | 日商德山股份有限公司 | 釕的半導體用處理液及其製造方法 |
| TW202132527A (zh) * | 2019-12-12 | 2021-09-01 | 日商Ｊｓｒ股份有限公司 | 化學機械研磨用組成物及研磨方法 |
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| JP2009206240A (ja) * | 2008-02-27 | 2009-09-10 | Jsr Corp | 化学機械研磨用水系分散体、化学機械研磨用水系分散体の製造方法および化学機械研磨方法 |
| TW201546251A (zh) * | 2014-03-11 | 2015-12-16 | Shinetsu Chemical Co | 硏磨組成物及硏磨方法以及硏磨組成物之製造方法 |
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| JP5317436B2 (ja) * | 2007-06-26 | 2013-10-16 | 富士フイルム株式会社 | 金属用研磨液及びそれを用いた研磨方法 |
| WO2014007063A1 (ja) * | 2012-07-06 | 2014-01-09 | 日立化成株式会社 | Ｃｍｐ用研磨液、貯蔵液及び研磨方法 |
| WO2016140246A1 (ja) * | 2015-03-04 | 2016-09-09 | 日立化成株式会社 | Ｃｍｐ用研磨液、及び、これを用いた研磨方法 |
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- 2019-01-30 TW TW108103623A patent/TWI788517B/zh active
- 2019-01-30 TW TW108103416A patent/TWI795521B/zh active
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009206240A (ja) * | 2008-02-27 | 2009-09-10 | Jsr Corp | 化学機械研磨用水系分散体、化学機械研磨用水系分散体の製造方法および化学機械研磨方法 |
| TW201546251A (zh) * | 2014-03-11 | 2015-12-16 | Shinetsu Chemical Co | 硏磨組成物及硏磨方法以及硏磨組成物之製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201942317A (zh) | 2019-11-01 |
| TW201943829A (zh) | 2019-11-16 |
| WO2019151144A1 (ja) | 2019-08-08 |
| TWI795521B (zh) | 2023-03-11 |
| TW201943828A (zh) | 2019-11-16 |
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