TWI788313B - Anisotropic conductive adhesive - Google Patents

Anisotropic conductive adhesive Download PDF

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TWI788313B
TWI788313B TW106141316A TW106141316A TWI788313B TW I788313 B TWI788313 B TW I788313B TW 106141316 A TW106141316 A TW 106141316A TW 106141316 A TW106141316 A TW 106141316A TW I788313 B TWI788313 B TW I788313B
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anisotropic conductive
particles
light
conductive adhesive
inorganic binder
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TW201834275A (en
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青木正治
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日商迪睿合股份有限公司
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    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J1/00Adhesives based on inorganic constituents
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J11/00Features of adhesives not provided for in group C09J9/00, e.g. additives
    • C09J11/02Non-macromolecular additives
    • C09J11/04Non-macromolecular additives inorganic
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J9/00Adhesives characterised by their physical nature or the effects produced, e.g. glue sticks
    • C09J9/02Electrically-conducting adhesives
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/20Conductive material dispersed in non-conductive organic material
    • H01B1/22Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B13/00Apparatus or processes specially adapted for manufacturing conductors or cables
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B5/00Non-insulated conductors or conductive bodies characterised by their form
    • H01B5/14Non-insulated conductors or conductive bodies characterised by their form comprising conductive layers or films on insulating-supports
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B5/00Non-insulated conductors or conductive bodies characterised by their form
    • H01B5/16Non-insulated conductors or conductive bodies characterised by their form comprising conductive material in insulating or poorly conductive material, e.g. conductive rubber
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01RELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
    • H01R11/00Individual connecting elements providing two or more spaced connecting locations for conductive members which are, or may be, thereby interconnected, e.g. end pieces for wires or cables supported by the wire or cable and having means for facilitating electrical connection to some other wire, terminal, or conductive member, blocks of binding posts
    • H01R11/01Individual connecting elements providing two or more spaced connecting locations for conductive members which are, or may be, thereby interconnected, e.g. end pieces for wires or cables supported by the wire or cable and having means for facilitating electrical connection to some other wire, terminal, or conductive member, blocks of binding posts characterised by the form or arrangement of the conductive interconnection between the connecting locations
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/30Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Dispersion Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Led Device Packages (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Electric Connection Of Electric Components To Printed Circuits (AREA)
  • Conductive Materials (AREA)
  • Non-Insulated Conductors (AREA)
  • Manufacturing Of Electric Cables (AREA)

Abstract

本發明提供一種具有優異之耐熱性及耐光能性之異向性導電接著劑。上述異向性導電接著劑使發光元件連接於基板之配線圖案之電極上,且含有無機黏合劑與導電粒子。因接著劑成分為無機材料,故而可獲得優異之耐熱性及耐光能性。尤其即便於安裝了發出藍色LED之2~3倍強度之光能之紫外線的紫外線LED之情形時,亦可獲得優異之耐熱性及耐光能性。The present invention provides an anisotropic conductive adhesive with excellent heat resistance and light resistance. The above-mentioned anisotropic conductive adhesive connects the light-emitting element to the electrode of the wiring pattern of the substrate, and contains an inorganic adhesive and conductive particles. Since the adhesive components are inorganic materials, excellent heat resistance and light resistance can be obtained. In particular, even when an ultraviolet LED that emits ultraviolet light with 2 to 3 times the intensity of light energy of a blue LED is installed, excellent heat resistance and light resistance can be obtained.

Description

異向性導電接著劑Anisotropic Conductive Adhesive

本發明係關於一種用以安裝LED(Light Emitting Diode,發光二極體)之異向性導電接著劑。本申請案係以2016年11月29日於日本提出申請之日本專利申請編號特願2016-231826為基礎而主張優先權者,該申請案係藉由參照而援用至本申請案中。The invention relates to an anisotropic conductive adhesive for installing LED (Light Emitting Diode, light emitting diode). This application claims priority based on Japanese Patent Application No. Japanese Patent Application No. 2016-231826 filed in Japan on November 29, 2016, and this application is incorporated in this application by reference.

先前,作為將LED之晶片零件安裝於電路基板之方法,已知打線接合。然而,打線接合存在接線切斷而發生電性連接不良之情形。又,打線接合係基板之通用性較低,難以實現小型化或可撓化。 作為解決打線接合之問題之方法,專利文獻1、2中提出有:使用使導電粒子分散於環氧系接著劑中並成形為膜狀之異向性導電膜,將LED進行覆晶安裝之方法。 [先前技術文獻] [專利文獻] [專利文獻1]日本專利特開2010-24301號公報 [專利文獻2]日本專利特開2012-186322號公報Conventionally, wire bonding is known as a method of mounting LED chip components on a circuit board. However, in wire bonding, the wires may be disconnected, resulting in poor electrical connection. Moreover, the versatility of the wire-bonded substrate is low, and it is difficult to achieve miniaturization or flexibility. As a method to solve the problem of wire bonding, Patent Documents 1 and 2 propose a method of flip-chip mounting LEDs using an anisotropic conductive film in which conductive particles are dispersed in an epoxy-based adhesive and formed into a film. . [Prior Art Document] [Patent Document] [Patent Document 1] Japanese Patent Laid-Open No. 2010-24301 [Patent Document 2] Japanese Patent Laid-Open No. 2012-186322

[發明所欲解決之問題] 覆晶安裝用之先前之異向性導電接著劑於為了提高LED之照度而流通大電流之情形時,存在由大電流之熱導致接著強度降低,LED剝離之情形。又,於使用先前之異向性導電接著劑安裝紫外線LED之情形時,存在由藍色LED之2~3倍強度之光能導致接著強度降低,LED變得不亮燈。 本發明係解決上述先前技術中之問題而成者,提供一種具有優異之耐熱性及耐光能性之異向性導電接著劑。 [解決問題之技術手段] 本發明者等人進行了努力研究,結果發現藉由將異向性導電接著劑之接著劑成分(黏合劑)設為無機材料,可獲得優異之耐熱性及耐光能性。 即,本發明之異向性導電接著劑之特徵在於:其使發光元件連接於基板之配線圖案之電極上,且含有無機黏合劑與導電粒子。 又,本發明之發光裝置之特徵在於:其具備具有配線圖案之基板、形成於上述配線圖案之電極上之異向性導電膜、及安裝於上述異向性導電膜上之發光元件,上述異向性導電膜為含有無機黏合劑與導電粒子之異向性導電接著劑之硬化物。 又,本發明之發光裝置之製造方法之特徵在於:於基板之配線圖案之電極上塗佈含有無機黏合劑與導電粒子之異向性導電接著劑,並經由上述異向性導電接著劑使發光元件加熱壓接。 [發明之效果] 根據本發明,因接著劑成分為無機材料,故而可獲得優異之耐熱性及耐光能性。[Problem to be Solved by the Invention] In the conventional anisotropic conductive adhesive for flip-chip mounting, when a large current is passed to increase the illuminance of the LED, the bonding strength is reduced due to the heat of the large current, and the LED peels off. . In addition, when using the conventional anisotropic conductive adhesive to install ultraviolet LEDs, there is light energy that is 2 to 3 times stronger than that of blue LEDs, resulting in reduced adhesive strength, and the LEDs do not light up. The present invention solves the above-mentioned problems in the prior art, and provides an anisotropic conductive adhesive having excellent heat resistance and light resistance. [Technical means to solve the problem] The inventors of the present invention conducted diligent research and found that excellent heat resistance and light resistance can be obtained by using an inorganic material as the adhesive component (binder) of the anisotropic conductive adhesive sex. That is, the anisotropic conductive adhesive of the present invention is characterized in that it connects a light-emitting element to an electrode of a wiring pattern on a substrate, and contains an inorganic binder and conductive particles. In addition, the light-emitting device of the present invention is characterized in that it includes a substrate having a wiring pattern, an anisotropic conductive film formed on an electrode of the wiring pattern, and a light-emitting element mounted on the anisotropic conductive film. Atropic conductive film is a cured product of anisotropic conductive adhesive containing inorganic binder and conductive particles. In addition, the method for manufacturing a light-emitting device of the present invention is characterized in that an anisotropic conductive adhesive containing an inorganic binder and conductive particles is coated on an electrode of a wiring pattern of a substrate, and light is emitted through the above-mentioned anisotropic conductive adhesive. Components are heated and crimped. [Effects of the Invention] According to the present invention, since the adhesive component is an inorganic material, excellent heat resistance and light resistance can be obtained.

以下,關於本發明之實施形態,一面參照圖式一面按下述順序詳細說明。 1.異向性導電接著劑 2.發光裝置 3.實施例 <1.異向性導電接著劑> 本實施形態之異向性導電接著劑使發光元件連接於基板之配線圖案之電極上,且含有無機黏合劑與導電粒子。藉由接著劑成分為無機材料,可獲得優異之耐熱性及耐光能性。 [無機黏合劑] 作為無機黏合劑之主成分,較佳為選自由鹼金屬矽酸鹽、磷酸鹽、及矽溶膠所組成之群中之至少一種,其中,較佳為使用由分子式M2 O・nSiO2 (M為Na、K、Li中之任一種,n為莫耳比)所表示之鹼金屬矽酸鹽。 鹼金屬矽酸鹽之金屬M一般而言以Na>K>Li之順序而接著性良好。因此,無機黏合劑之主成分較佳為矽酸鈉(水玻璃)。作為矽酸鈉,較佳為使用依據JIS K1408之矽酸鈉1號~3號,其中,就接著力之觀點而言較佳為使用矽酸鈉3號。 又,無機黏合劑亦可為了提高接著力而含有以下化合物作為硬化劑:Zn、Mg、C中之任一種之氧化物、氫氧化物,Na、K、Ca中之任一種之矽化物、矽氟化物,Al、Zn中之任一種之磷酸鹽,Ca、Ba、Mg中之任一種之硼酸鹽。 [導電粒子] 作為導電粒子,較佳為選自由焊料粒子、金屬粒子、及於樹脂粒子上被覆有金屬之樹脂芯導電粒子所組成之群中之至少一種。其中,較佳為使用焊料粒子,較佳為併用焊料粒子與樹脂芯粒子。 導電粒子之平均粒徑較佳為1 μm以上且30 μm以下,更佳為5 μm以上且25 μm以下。導電粒子之調配量較佳為相對於無機黏合劑100質量份而為3~120質量份,更佳為10~80質量份。 作為焊料粒子,例如可根據電極材料或連接條件等自JIS Z 3282-1999所規定之Sn-Pb系、Pb-Sn-Sb系、Sn-Sb系、Sn-Pb-Bi系、Bi-Sn系、Sn-Cu系、Sn-Pb-Cu系、Sn-In系、Sn-Ag系、Sn-Pb-Ag系、Pb-Ag系等中適當選擇使用。又,焊料粒子之形狀可自粒狀、鱗片狀等中適當選擇。又,焊料粒子亦可為了提高異向性而經絕緣層被覆。又,焊料之熔點較佳為100~250℃,更佳為150~200℃。再者,焊料粒子可藉由壓接時之充分之負荷,即便於焊料粒子之熔點以下之安裝溫度下亦與端子(電極)之間形成合金。 焊料粒子之調配量較佳為20~120質量份。若焊料粒子之調配量過少則無法獲得優異之散熱特性,若調配量過多則異向性受損,無法獲得優異之連接可靠性。 於併用焊料粒子與樹脂芯導電粒子之情形時,焊料粒子較佳為平均粒徑大於樹脂芯導電粒子,焊料粒子之平均粒徑較佳為樹脂芯導電粒子之平均粒徑之120~800%,更佳為200~500%。藉由焊料粒子之平均粒徑大於樹脂芯導電粒子,可於壓接時向焊料粒子充分地施加負荷,即便於焊料粒子之熔點以下之安裝溫度下亦與端子(電極)之間形成合金。 作為金屬粒子,例如可使用鎳、鐵、銅、鋁、錫、鉛、鉻、鈷、銀、金等各種金屬或該等之合金。 作為樹脂芯導電粒子之樹脂粒子,例如可使用環氧樹脂、酚系樹脂、丙烯酸系樹脂、丙烯腈-苯乙烯(AS)樹脂、苯并胍胺樹脂、二乙烯苯系樹脂、苯乙烯系樹脂等。又,作為被覆樹脂粒子之金屬,例如可使用鎳、鐵、銅、鋁、錫、鉛、鉻、鈷、銀、金等各種金屬或該等之合金。 又,本實施形態之異向性導電接著劑亦可為了調整黏度或線膨脹而進而含有無機填料。作為無機填料,例如可列舉二氧化矽、氧化鋁、氧化鈦、氮化鋁、碳酸鈣、氧化鎂等。無機填料之平均粒徑較佳為10 nm~10 μm,無機填料之調配量較佳為相對於無機黏合劑100質量份而為1~100質量份。 又,異向性導電接著劑亦可為了將源自LED之出射光反射,獲得較高之光提取效率,而含有TiO2 、BN、ZnO、Al2 O3 等之白色無機粒子。白色無機粒子之平均粒徑較佳為所反射之光之波長之1/2以上。 根據此種異向性導電接著劑,藉由接著劑成分為無機材料,可獲得優異之耐熱性及耐光能性。尤其即便於安裝了發出藍色LED之2~3倍強度之光能之紫外線的紫外線LED之情形時,亦可獲得優異之耐熱性及耐光能性。 <2.發光裝置> 本實施形態之發光裝置具備具有配線圖案之基板、形成於配線圖案之電極上之異向性導電膜、及安裝於異向性導電膜上之發光元件,且異向性導電膜為含有上述無機黏合劑與導電粒子之異向性導電接著劑之硬化物。藉此,可獲得優異之耐熱性及耐光能性。 又,本實施形態之發光裝置之製造方法係於基板之配線圖案之電極上塗佈含有無機黏合劑與導電粒子之異向性導電接著劑,並經由異向性導電接著劑使發光元件加熱壓接。 圖1係表示發光裝置之一例之剖視圖。發光元件具備例如包含n-GaN之第1導電型披覆層11、例如包含Inx Aly Ga1-x-y N層之活性層12、及例如包含p-GaN之第2導電型披覆層113,具有所謂雙異質結構。又,具備藉由鈍化層14形成於第1導電型披覆層11之一部分之第1導電型電極11a、及形成於第2導電型披覆層13之一部分之第2導電型電極13a。若於第1導電型電極11a與第2導電型電極13a之間施加電壓,則於活性層12中載子集中並再結合,由此產生發光。 發光元件並無特別限定,可為發出發光波長為200~300 nm左右之紫外線之紫外線LED,亦可為發出發光波長為460 nm左右之藍色光之藍色LED。根據基於光能式(E=hc/λ)之計算,藍色LED之光能為2.8 eV,紫外線LED之光能為4.1~6.2 eV,紫外線LED具有藍色LED之2~3倍之強度之光能,於本實施形態中,因異向性導電接著劑之接著劑成分為無機材料,故而即便於使用紫外線LED之情形時,亦可抑制接著強度之降低,獲得優異之耐熱性及耐光能性。 基板於基材21上具備第1導電型用電路圖案22與第2導電型用電路圖案23,於與發光元件之第1導電型電極11a及第2導電型電極13a對應之位置分別具有電極。 基板較佳為透光基板。於基材21為透光基板之情形時,基材31較佳為玻璃、PET(polyethylene terephthalate,聚對苯二甲酸乙二酯)等透明基材,第1導電型用電路圖案22、第2導電型用電路圖案23、及其電極較佳為ITO(Indium-Tin-Oxide,氧化銦錫)、IZO(Indium-Zinc-Oxide,氧化銦鋅)、ZnO(Zinc-Oxide,氧化鋅)、IGZO(Indium-Gallium-Zinc-Oxide,氧化銦鎵鋅)等透明導電膜。藉由基板為透光基板,能夠將基板側設為顯示面(發光面)。 異向性導電膜30係上述異向性導電接著劑硬化而成者,藉由於發光元件之端子(電極11a、13a)與基板之端子(電極)之間捕捉導電粒子31,而將發光元件與基板電性連接。 根據此種發光裝置,藉由異向性導電接著劑之接著劑成分為無機材料,可獲得優異之耐熱性及耐光能性。尤其即便於安裝了發出藍色LED之2~3倍強度之光能之紫外線的紫外線LED之情形時,亦可獲得優異之耐熱性及耐光能性。 <3.實施例> [實施例] 以下對本發明之實施例進行說明。於本實施例中製作各種異向性導電接著劑。然後,使用異向性導電接著劑於基板上安裝藍色LED晶片而製作LED安裝樣品A,測定初期及高溫高濕連續亮燈試驗後之晶片剪切強度並評價耐熱性。又,使用異向性導電接著劑於基板上安裝紫外線LED晶片而製作LED安裝樣品B,測定初期、TCT(Temperature Cycling Test,溫度循環測試)試驗後及高溫高濕連續亮燈試驗後之順向電壓並對耐熱性及耐光能性進行評價。再者,本發明並不限定於該等實施例。 [LED安裝樣品之製作] 圖2係用以說明LED安裝樣品之製作步驟之圖。如圖2所示般製作LED安裝樣品。於載台上配置形成有金屬配線之陶瓷基板41,於陶瓷基板41上藉由戳印法塗佈異向性導電接著劑40。然後,於異向性導電接著劑40上以60 g之負荷搭載LED晶片42,使用加熱壓接接合機43,將頭部與載台加熱而進行加熱壓接安裝,獲得LED安裝樣品A或LED安裝樣品B。 [晶片剪切強度之測定] 使用藍色LED(額定350 mA,尺寸45 mm見方,波長460 nm)作為LED晶片42,製作LED安裝樣品A。 圖3係表示晶片剪切強度試驗之概要之剖視圖。如圖3所示,使用晶片剪切強度測試機,於工具50之剪切速率20 μm/sec、溫度25℃之條件下測定各LED安裝樣品A之初期、及高溫高濕連續亮燈試驗後之晶片剪切強度。高溫高濕連續亮燈試驗係於溫度85℃-濕度90%-500小時之條件下連續亮燈。 [順向電壓之測定] 使用藍色LED(Nitride Semiconductor公司,NS355C-2SAA,額定20 mA,順向電壓3.61 V,波長355 nm)作為LED晶片42,製作LED安裝樣品B。 測定各LED安裝樣品B之初期、TCT試驗後、及高溫高濕連續亮燈試驗後之順向電壓。TCT試驗係將LED安裝樣品B於-40℃及100℃之環境中各暴露30分鐘,進行將其作為1循環之冷熱循環1000次。高溫高濕連續亮燈試驗係於溫度85℃-濕度90%-1000小時、20 mA之條件下連續亮燈。將與LED之初期之順向電壓相比變化0.1 V以上者評價為NG。 <實施例1> 如表1所示,秤量並添加水玻璃(JIS K1408中所示之矽酸鈉3號)100質量份、及焊料粒子(粒徑10~25 μm,熔點180℃,千住金屬工業公司製造)60質量份,藉由行星攪拌機以2000 rpm/2 min進行攪拌而製作異向性導電接著劑。經由該異向性導電接著劑將LED晶片搭載於陶瓷基板上,將頭部加熱至150℃,將載台加熱至50℃,於安裝溫度(極限最高溫度)100℃、60秒鐘之條件下進行加熱壓接安裝而獲得LED安裝樣品A、B。表1中示出LED安裝樣品A之初期及高溫高濕連續亮燈試驗後之晶片剪切強度、以及LED安裝樣品B之初期、TCT試驗後及高溫高濕連續亮燈試驗後之順向電壓之測定結果。 <實施例2> 如表1所示,秤量並添加水玻璃(JIS K1408中所示之矽酸鈉3號)100質量份、及樹脂芯導電粒子(平均粒徑5 μm,鍍鎳,樹脂芯粒子(日本化學公司製造EH Core))10質量份,藉由行星攪拌機以2000 rpm/2 min進行攪拌而製作異向性導電接著劑。除此以外,以與實施例1相同之方式製作LED安裝樣品A、B。 <實施例3> 如表1所示,秤量並添加水玻璃(JIS K1408中所示之矽酸鈉3號)100質量份、焊料粒子(粒徑10~25 μm,熔點180℃,千住金屬工業公司製造)30質量份、及樹脂芯導電粒子(平均粒徑5 μm,鍍鎳,樹脂芯粒子(日本化學公司製造EH Core))5質量份,藉由行星攪拌機以2000 rpm/2 min進行攪拌而製作異向性導電接著劑。除此以外,以與實施例1相同之方式製作LED安裝樣品A、B。 <實施例4> 如表1所示,秤量並添加水玻璃(JIS K1408中所示之矽酸鈉3號)100質量份、焊料粒子(粒徑10~25 μm,熔點180℃,千住金屬工業公司製造)60質量份、及二氧化矽粒子(日本艾羅技(Aerosil)公司製造之艾羅技(Aerosil)RX300)7質量份,藉由行星攪拌機以2000 rpm/2 min進行攪拌而製作異向性導電接著劑。除此以外,以與實施例1相同之方式製作LED安裝樣品A、B。 <比較例1> 如表1所示,使用Dexerials公司製造之含有胺系硬化劑之液狀異向性導電接著劑(BP系列,樹脂:環氧樹脂,粒子:Ni粒子)作為異向性導電接著劑。經由該異向性導電接著劑將LED晶片搭載於陶瓷基板上,將頭部加熱至200℃,將載台加熱至50℃,於安裝溫度(極限最高溫度)150℃、30秒鐘之條件下進行加熱壓接安裝而獲得LED安裝樣品A、B。 <比較例2> 如表1所示,使用Dexerials公司製造之陽離子硬化ACF(Anisotropic Conductive Film,異向性導電膜)(樹脂:環氧樹脂,粒子:鎳被覆樹脂粒子,粒徑:3 μm,厚度:6 μm,樹脂密度:60 Kpcs/mm2 )作為異向性導電接著劑。經由該異向性導電接著劑將LED晶片搭載於陶瓷基板上,將頭部加熱至250℃,將載台加熱至70℃,於安裝溫度(極限最高溫度)180℃、30秒鐘之條件下進行加熱壓接安裝而獲得LED安裝樣品A、B。 <比較例3> 如表1所示,秤量並添加矽樹脂(信越化學公司製造之KER2500)100質量份、及焊料粒子(粒徑10~25 μm,熔點180℃,千住金屬工業公司製造)60質量份,藉由行星攪拌機以2000 rpm/2 min進行攪拌而製作異向性導電接著劑。經由該異向性導電接著劑將LED晶片搭載於陶瓷基板上,將頭部加熱至290℃,將載台加熱至60℃,於安裝溫度(極限最高溫度)200℃、60秒鐘之條件下進行加熱壓接安裝而獲得LED安裝樣品A、B。 [表1]

Figure 106141316-A0304-0001
於如比較例1般使用含有胺系硬化劑之液狀異向性導電接著劑之情形時,由胺硬化系-環氧樹脂之極性導致吸水性較高,故而LED安裝樣品A於高溫高濕連續亮燈試驗中晶片剪切強度降低,LED安裝樣品B於高溫高濕連續亮燈試驗中順向電壓大幅度地變化。 又,於如比較例2般使用陽離子硬化ACF之情形時,LED安裝樣品A於高溫高濕連續亮燈試驗中藍色LED剝落,LED安裝樣品B於TCT試驗中於300小時變得不亮燈,於高溫高濕連續亮燈試驗中於130小時變得不亮燈。 又,於如比較例3般使用矽樹脂ACF之情形時,因矽樹脂較柔軟,故而LED安裝樣品A無法獲得較高之晶片剪切強度,LED安裝樣品B於TCT試驗中於200小時變得不亮燈,於高溫高濕連續亮燈試驗中於200小時變得不亮燈。 另一方面,於如實施例1~4般使用含有水玻璃之無機ACF之情形時,LED安裝樣品A即便於高溫高濕連續亮燈試驗中晶片剪切強度亦不降低,LED安裝樣品B即便於TCT試驗、及高溫高濕連續亮燈試驗中順向電壓之變化亦較小。即,可知藉由使用含有水玻璃之無機ACF,可獲得優異之耐熱性及耐光能性。Hereinafter, embodiments of the present invention will be described in detail in the following order with reference to the drawings. 1. Anisotropic conductive adhesive 2. Light-emitting device 3. Examples <1. Anisotropic conductive adhesive> The anisotropic conductive adhesive of this embodiment connects the light-emitting element to the electrode of the wiring pattern of the substrate, and Contains inorganic binder and conductive particles. When the adhesive component is an inorganic material, excellent heat resistance and light resistance can be obtained. [Inorganic binder] As the main component of the inorganic binder, it is preferably at least one selected from the group consisting of alkali metal silicate, phosphate, and silica sol.・Alkali metal silicate represented by nSiO 2 (M is any one of Na, K, and Li, and n is the molar ratio). The metal M of the alkali metal silicate generally follows the order of Na>K>Li and has good adhesion. Therefore, the main component of the inorganic binder is preferably sodium silicate (water glass). As the sodium silicate, it is preferable to use sodium silicate No. 1 to No. 3 based on JIS K1408, and among them, it is preferable to use sodium silicate No. 3 from the viewpoint of adhesive force. In addition, the inorganic adhesive can also contain the following compounds as hardeners in order to improve the adhesion: oxides and hydroxides of any of Zn, Mg, and C, silicides of any of Na, K, and Ca, and silicon Fluoride, phosphate of any of Al and Zn, borate of any of Ca, Ba, and Mg. [Conductive Particles] The conductive particles are preferably at least one selected from the group consisting of solder particles, metal particles, and resin core conductive particles in which metal is coated on resin particles. Among them, it is preferable to use solder particles, and it is preferable to use solder particles and resin core particles in combination. The average particle diameter of the conductive particles is preferably not less than 1 μm and not more than 30 μm, more preferably not less than 5 μm and not more than 25 μm. The compounding quantity of an electroconductive particle is preferably 3-120 mass parts with respect to 100 mass parts of inorganic binders, More preferably, it is 10-80 mass parts. As solder particles, for example, Sn-Pb system, Pb-Sn-Sb system, Sn-Sb system, Sn-Pb-Bi system, Bi-Sn system specified in JIS Z 3282-1999 according to electrode materials and connection conditions, etc. , Sn-Cu-based, Sn-Pb-Cu-based, Sn-In-based, Sn-Ag-based, Sn-Pb-Ag-based, Pb-Ag-based, etc. are appropriately selected and used. Also, the shape of the solder particles can be appropriately selected from granular, scaly, and the like. In addition, solder particles may be coated with an insulating layer in order to increase anisotropy. Also, the melting point of the solder is preferably from 100 to 250°C, more preferably from 150 to 200°C. Furthermore, solder particles can form an alloy with a terminal (electrode) even at a mounting temperature below the melting point of the solder particles due to a sufficient load at the time of crimping. It is preferable that the compounding quantity of a solder particle is 20-120 mass parts. If the blending amount of solder particles is too small, excellent heat dissipation properties cannot be obtained, and if the blending amount is too large, the anisotropy will be damaged, and excellent connection reliability cannot be obtained. When solder particles and resin-core conductive particles are used together, the average particle size of the solder particles is preferably larger than that of the resin-core conductive particles, and the average particle size of the solder particles is preferably 120-800% of the average particle size of the resin-core conductive particles. More preferably, it is 200 to 500%. Since the average particle size of the solder particles is larger than that of the resin core conductive particles, a sufficient load can be applied to the solder particles during crimping, and an alloy can be formed with the terminal (electrode) even at a mounting temperature below the melting point of the solder particles. As the metal particles, for example, various metals such as nickel, iron, copper, aluminum, tin, lead, chromium, cobalt, silver, gold, or alloys thereof can be used. As the resin particle of the resin core conductive particle, for example, epoxy resin, phenol resin, acrylic resin, acrylonitrile-styrene (AS) resin, benzoguanamine resin, divinylbenzene resin, styrene resin can be used. wait. Also, as the metal to coat the resin particles, for example, various metals such as nickel, iron, copper, aluminum, tin, lead, chromium, cobalt, silver, gold, or alloys thereof can be used. In addition, the anisotropic conductive adhesive of this embodiment may further contain an inorganic filler for the purpose of adjusting viscosity or linear expansion. Examples of the inorganic filler include silica, alumina, titanium oxide, aluminum nitride, calcium carbonate, and magnesium oxide. The average particle diameter of the inorganic filler is preferably 10 nm to 10 μm, and the blending amount of the inorganic filler is preferably 1 to 100 parts by mass relative to 100 parts by mass of the inorganic binder. In addition, the anisotropic conductive adhesive may contain white inorganic particles such as TiO 2 , BN, ZnO, Al 2 O 3 , etc. in order to reflect light emitted from LEDs and obtain higher light extraction efficiency. The average particle diameter of the white inorganic particles is preferably at least 1/2 of the wavelength of the reflected light. According to such an anisotropic conductive adhesive, since the adhesive component is an inorganic material, excellent heat resistance and light resistance can be obtained. In particular, even when an ultraviolet LED that emits ultraviolet light with 2 to 3 times the intensity of light energy of a blue LED is installed, excellent heat resistance and light resistance can be obtained. <2. Light-emitting device> The light-emitting device of this embodiment includes a substrate having a wiring pattern, an anisotropic conductive film formed on an electrode of the wiring pattern, and a light-emitting element mounted on the anisotropic conductive film, and the anisotropic The conductive film is a cured product of an anisotropic conductive adhesive containing the above-mentioned inorganic binder and conductive particles. Thereby, excellent heat resistance and light resistance can be obtained. In addition, the manufacturing method of the light-emitting device of this embodiment is to apply an anisotropic conductive adhesive containing an inorganic binder and conductive particles on the electrodes of the wiring pattern of the substrate, and heat and press the light-emitting element through the anisotropic conductive adhesive. catch. FIG. 1 is a cross-sectional view showing an example of a light emitting device. The light-emitting element has, for example, a first conductivity type cladding layer 11 including n-GaN, an active layer 12 including an InxAlyGa1 -xyN layer, and a second conductivity type cladding layer 113 including p-GaN, for example. , with a so-called double heterostructure. In addition, a first conductivity type electrode 11 a formed on a part of the first conductivity type coating layer 11 via a passivation layer 14 and a second conductivity type electrode 13 a formed on a part of the second conductivity type coating layer 13 are provided. When a voltage is applied between the first conductivity type electrode 11a and the second conductivity type electrode 13a, carriers are concentrated in the active layer 12 and recombined to generate light emission. The light emitting element is not particularly limited, and may be an ultraviolet LED emitting ultraviolet light with a light emitting wavelength of about 200-300 nm, or a blue LED emitting blue light with a light emitting wavelength of about 460 nm. According to the calculation based on the light energy formula (E=hc/λ), the light energy of the blue LED is 2.8 eV, the light energy of the ultraviolet LED is 4.1-6.2 eV, and the ultraviolet LED has 2 to 3 times the intensity of the blue LED. Light energy, in this embodiment, since the adhesive component of the anisotropic conductive adhesive is an inorganic material, even in the case of using ultraviolet LEDs, it is possible to suppress the decrease in adhesive strength and obtain excellent heat resistance and light resistance sex. The substrate has a circuit pattern 22 for the first conductivity type and a circuit pattern 23 for the second conductivity type on the base material 21, and has electrodes at positions corresponding to the first conductivity type electrode 11a and the second conductivity type electrode 13a of the light emitting element, respectively. The substrate is preferably a transparent substrate. When the substrate 21 is a light-transmitting substrate, the substrate 31 is preferably a transparent substrate such as glass or PET (polyethylene terephthalate, polyethylene terephthalate). The conductive circuit pattern 23 and its electrodes are preferably ITO (Indium-Tin-Oxide, indium tin oxide), IZO (Indium-Zinc-Oxide, indium zinc oxide), ZnO (Zinc-Oxide, zinc oxide), IGZO (Indium-Gallium-Zinc-Oxide, indium gallium zinc oxide) and other transparent conductive films. Since the substrate is a light-transmitting substrate, the substrate side can be used as a display surface (light emitting surface). The anisotropic conductive film 30 is obtained by hardening the above-mentioned anisotropic conductive adhesive. By trapping conductive particles 31 between the terminals (electrodes 11a, 13a) of the light-emitting element and the terminals (electrodes) of the substrate, the light-emitting element and the terminal (electrode) are connected together. The substrate is electrically connected. According to such a light-emitting device, since the adhesive component of the anisotropic conductive adhesive is an inorganic material, excellent heat resistance and light resistance can be obtained. In particular, even when an ultraviolet LED that emits ultraviolet light with 2 to 3 times the intensity of light energy of a blue LED is installed, excellent heat resistance and light resistance can be obtained. <3. Examples> [Example] Hereinafter, examples of the present invention will be described. In this embodiment, various anisotropic conductive adhesives are produced. Then, a blue LED chip was mounted on the substrate using an anisotropic conductive adhesive to prepare an LED mounting sample A, and the chip shear strength was measured at the initial stage and after the high-temperature, high-humidity continuous lighting test, and the heat resistance was evaluated. In addition, using an anisotropic conductive adhesive to mount ultraviolet LED chips on the substrate to make LED mounting sample B, measure the forward direction at the initial stage, after the TCT (Temperature Cycling Test, temperature cycle test) test, and after the high-temperature and high-humidity continuous lighting test. Voltage and evaluate heat resistance and light resistance. Furthermore, the present invention is not limited to these examples. [Production of Mounted LED Samples] Fig. 2 is a diagram for explaining the steps of manufacturing LED mounted samples. As shown in Fig. 2, LED mounting samples were produced. A ceramic substrate 41 formed with metal wiring is arranged on a stage, and an anisotropic conductive adhesive 40 is coated on the ceramic substrate 41 by a stamping method. Then, mount the LED chip 42 on the anisotropic conductive adhesive 40 with a load of 60 g, and use the thermocompression bonding machine 43 to heat the head and the stage to perform thermocompression bonding mounting to obtain the LED mounting sample A or LED Install sample B. [Measurement of Wafer Shear Strength] A blue LED (350 mA rating, 45 mm square size, 460 nm wavelength) was used as the LED chip 42 to prepare an LED mounting sample A. Fig. 3 is a cross-sectional view showing the outline of a wafer shear strength test. As shown in Figure 3, using a wafer shear strength tester, under the conditions of a tool 50 with a shear rate of 20 μm/sec and a temperature of 25°C, the initial stage of each LED mounting sample A and after the high-temperature, high-humidity continuous lighting test were measured. wafer shear strength. The high temperature and high humidity continuous lighting test is continuous lighting under the conditions of temperature 85°C-humidity 90%-500 hours. [Measurement of Forward Voltage] A blue LED (Nitride Semiconductor, NS355C-2SAA, rated at 20 mA, forward voltage of 3.61 V, wavelength of 355 nm) was used as the LED chip 42 to prepare an LED mounting sample B. Measure the forward voltage of each LED mounting sample B at the initial stage, after the TCT test, and after the high temperature and high humidity continuous lighting test. In the TCT test, the LED mounting sample B was exposed to environments of -40°C and 100°C for 30 minutes each, and the heating and cooling cycle was performed 1000 times as one cycle. High temperature and high humidity continuous lighting test is continuous lighting under the conditions of temperature 85°C-humidity 90%-1000 hours, 20 mA. A change of 0.1 V or more from the initial forward voltage of the LED was evaluated as NG. <Example 1> As shown in Table 1, 100 parts by mass of water glass (sodium silicate No. 3 listed in JIS K1408) and solder particles (particle size 10-25 μm, melting point 180°C, Senju Metal Industrial Co., Ltd.) 60 parts by mass were stirred with a planetary mixer at 2000 rpm/2 min to prepare an anisotropic conductive adhesive. Mount the LED chip on the ceramic substrate through the anisotropic conductive adhesive, heat the head to 150°C, heat the stage to 50°C, and set the mounting temperature (maximum temperature) at 100°C for 60 seconds LED mounting samples A and B were obtained by thermocompression bonding. Table 1 shows the chip shear strength of the LED mounting sample A at the initial stage and after the high temperature and high humidity continuous lighting test, and the forward voltage of the LED mounting sample B at the initial stage, after the TCT test, and after the high temperature and high humidity continuous lighting test The measurement results. <Example 2> As shown in Table 1, weigh and add 100 parts by mass of water glass (sodium silicate No. 3 listed in JIS K1408), and resin core conductive particles (average particle size 5 μm, nickel-plated, resin core Particles (Nippon Chemical Co., Ltd. EH Core)) 10 parts by mass were stirred by a planetary mixer at 2000 rpm/2 min to prepare an anisotropic conductive adhesive. Except for this, LED mounting samples A and B were produced in the same manner as in Example 1. <Example 3> As shown in Table 1, weigh and add 100 parts by mass of water glass (sodium silicate No. 3 listed in JIS K1408), solder particles (particle size 10-25 μm, melting point 180°C, Senju Metal Industry Co., Ltd. 30 parts by mass of the company) and 5 parts by mass of resin core conductive particles (average particle size 5 μm, nickel-plated, resin core particles (Nippon Kagaku EH Core)) were stirred at 2000 rpm/2 min by a planetary mixer And make anisotropic conductive adhesive. Except for this, LED mounting samples A and B were produced in the same manner as in Example 1. <Example 4> As shown in Table 1, weigh and add 100 parts by mass of water glass (sodium silicate No. 3 listed in JIS K1408), solder particles (particle size 10-25 μm, melting point 180°C, Senju Metal Industry Co., Ltd. 60 parts by mass manufactured by the company) and 7 parts by mass of silicon dioxide particles (Aerosil RX300 manufactured by Aerosil Corporation of Japan) were stirred by a planetary mixer at 2000 rpm/2 min to produce anisotropy Conductive adhesive. Except for this, LED mounting samples A and B were produced in the same manner as in Example 1. <Comparative Example 1> As shown in Table 1, a liquid anisotropic conductive adhesive (BP series, resin: epoxy resin, particles: Ni particles) manufactured by Dexerials Co., Ltd. containing an amine-based hardener was used as the anisotropic conductive adhesive. Adhesive. Mount the LED chip on the ceramic substrate through the anisotropic conductive adhesive, heat the head to 200°C, heat the stage to 50°C, and set the mounting temperature (maximum temperature) at 150°C for 30 seconds LED mounting samples A and B were obtained by thermocompression bonding. <Comparative Example 2> As shown in Table 1, cation-curing ACF (Anisotropic Conductive Film, anisotropic conductive film) manufactured by Dexerials Co., Ltd. (resin: epoxy resin, particles: nickel-coated resin particles, particle size: 3 μm, Thickness: 6 μm, resin density: 60 Kpcs/mm 2 ) as an anisotropic conductive adhesive. Mount the LED chip on the ceramic substrate through the anisotropic conductive adhesive, heat the head to 250°C, heat the stage to 70°C, and set the mounting temperature (maximum temperature) at 180°C for 30 seconds LED mounting samples A and B were obtained by thermocompression bonding. <Comparative Example 3> As shown in Table 1, 100 parts by mass of silicone resin (KER2500 manufactured by Shin-Etsu Chemical Co., Ltd.) and 60 parts by mass of solder particles (particle size 10 to 25 μm, melting point 180°C, manufactured by Senju Metal Industry Co., Ltd.) were weighed and added. parts by mass, stirred by a planetary mixer at 2000 rpm/2 min to make an anisotropic conductive adhesive. Mount the LED chip on the ceramic substrate through the anisotropic conductive adhesive, heat the head to 290°C, heat the stage to 60°C, and set the mounting temperature (maximum temperature) at 200°C for 60 seconds LED mounting samples A and B were obtained by thermocompression bonding. [Table 1]
Figure 106141316-A0304-0001
In the case of using a liquid anisotropic conductive adhesive containing an amine-based hardener as in Comparative Example 1, the polarity of the amine-hardened epoxy resin leads to high water absorption, so LED mounting sample A is exposed to high temperature and high humidity. The wafer shear strength decreased in the continuous lighting test, and the forward voltage of the LED mounted sample B changed significantly in the high-temperature and high-humidity continuous lighting test. Also, when using cation-curing ACF as in Comparative Example 2, the blue LED peeled off in the LED-mounted sample A in the high-temperature, high-humidity continuous lighting test, and the LED-mounted sample B did not light up after 300 hours in the TCT test. , In the high-temperature and high-humidity continuous lighting test, the light did not turn on after 130 hours. Also, when the silicone resin ACF is used as in Comparative Example 3, since the silicone resin is soft, the LED mounting sample A cannot obtain a high chip shear strength, and the LED mounting sample B becomes weaker in 200 hours in the TCT test The lamp does not light up, and the lamp does not light up after 200 hours in the high-temperature, high-humidity continuous lighting test. On the other hand, when inorganic ACF containing water glass was used as in Examples 1 to 4, the chip shear strength of the LED mounted sample A did not decrease even in the high-temperature, high-humidity continuous lighting test, and the LED mounted sample B even In the TCT test and the high temperature and high humidity continuous lighting test, the change of the forward voltage is also small. That is, it was found that excellent heat resistance and light resistance can be obtained by using inorganic ACF containing water glass.

11‧‧‧第1導電型披覆層11a‧‧‧第1導電型電極12‧‧‧活性層13‧‧‧第2導電型披覆層13a‧‧‧第2導電型電極14‧‧‧鈍化層21‧‧‧基材22‧‧‧第1導電型用電路圖案23‧‧‧第2導電型用電路圖案30‧‧‧異向性導電膜31‧‧‧導電性粒子40‧‧‧異向性導電接著劑41‧‧‧陶瓷基板42‧‧‧LED晶片43‧‧‧加熱壓接接合機50‧‧‧工具11‧‧‧first conductivity type coating layer 11a‧‧‧first conductivity type electrode 12‧‧‧active layer 13‧‧‧second conductivity type coating layer 13a‧‧‧second conductivity type electrode 14‧‧‧ Passivation layer 21‧‧‧substrate 22‧‧‧circuit pattern for the first conductivity type 23‧‧‧circuit pattern for the second conductivity type 30‧‧‧anisotropic conductive film 31‧‧‧conductive particles 40‧‧‧ Anisotropic conductive adhesive 41‧‧‧ceramic substrate 42‧‧‧LED chip 43‧‧‧thermocompression bonding machine 50‧‧‧tool

圖1係表示發光裝置之一例之剖視圖。 圖2係用以說明LED安裝樣品之製作步驟之圖。 圖3係表示晶片剪切強度試驗之概要之剖視圖。FIG. 1 is a cross-sectional view showing an example of a light emitting device. Fig. 2 is a diagram for explaining the manufacturing steps of LED mounted samples. Fig. 3 is a cross-sectional view showing the outline of a wafer shear strength test.

11‧‧‧第1導電型披覆層 11‧‧‧The first conductivity type cladding layer

11a‧‧‧第1導電型電極 11a‧‧‧First conductivity type electrode

12‧‧‧活性層 12‧‧‧active layer

13‧‧‧第2導電型披覆層 13‧‧‧Second conductivity type cladding layer

13a‧‧‧第2導電型電極 13a‧‧‧Second conductivity type electrode

14‧‧‧鈍化層 14‧‧‧passivation layer

21‧‧‧基材 21‧‧‧Substrate

22‧‧‧第1導電型用電路圖案 22‧‧‧Circuit pattern for the first conductivity type

23‧‧‧第2導電型用電路圖案 23‧‧‧Circuit pattern for the second conductivity type

30‧‧‧異向性導電膜 30‧‧‧Anisotropic conductive film

31‧‧‧導電性粒子 31‧‧‧Conductive particles

Claims (8)

一種異向性導電接著劑,其係使發光元件連接於基板之配線圖案之電極上者,且含有無機黏合劑與包含熔點為150~200℃之焊料粒子之導電粒子,上述無機黏合劑以依據JIS K1408之矽酸鈉3號作為主成分。 An anisotropic conductive adhesive, which connects light-emitting elements to the electrodes of the wiring pattern of the substrate, and contains an inorganic binder and conductive particles including solder particles with a melting point of 150-200°C. The above-mentioned inorganic binder is based on Sodium silicate No. 3 of JIS K1408 is used as the main component. 如請求項1之異向性導電接著劑,其中上述導電粒子為選自由焊料粒子、金屬粒子、及於樹脂粒子上被覆有金屬之樹脂芯導電粒子所組成之群中之至少一種。 The anisotropic conductive adhesive according to claim 1, wherein the conductive particles are at least one selected from the group consisting of solder particles, metal particles, and resin core conductive particles coated with metal on resin particles. 如請求項1之異向性導電接著劑,其中上述導電粒子之調配量相對於上述無機黏合劑100質量份而為3~120質量份。 The anisotropic conductive adhesive according to claim 1, wherein the compounding amount of the above-mentioned conductive particles is 3-120 parts by mass relative to 100 parts by mass of the above-mentioned inorganic binder. 如請求項2之異向性導電接著劑,其中上述導電粒子之調配量相對於上述無機黏合劑100質量份而為3~120質量份。 The anisotropic conductive adhesive according to claim 2, wherein the compounding amount of the above-mentioned conductive particles is 3 to 120 parts by mass relative to 100 parts by mass of the above-mentioned inorganic binder. 如請求項1至4中任一項之異向性導電接著劑,其中上述發光元件發出紫外線。 The anisotropic conductive adhesive according to any one of claims 1 to 4, wherein the light-emitting element emits ultraviolet rays. 如請求項1至4中任一項之異向性導電接著劑,其進而含有無機粒子。 The anisotropic conductive adhesive according to any one of claims 1 to 4, which further contains inorganic particles. 一種發光裝置,其具備:基板,其具有配線圖案;異向性導電膜,其形成於上述配線圖案之電極上;及發光元件,其安裝於上述異向性導電膜上;且上述異向性導電膜為含有無機黏合劑與導電粒子之異向性導電接著劑之硬化物,上述導電粒子包含熔點為150~200℃之焊料粒子,上述無機黏合劑以依據JIS K1408之矽酸鈉3號作為主成分。 A light emitting device comprising: a substrate having a wiring pattern; an anisotropic conductive film formed on electrodes of the wiring pattern; and a light emitting element mounted on the anisotropic conductive film; and the anisotropic The conductive film is a cured product of an anisotropic conductive adhesive containing an inorganic binder and conductive particles. The above-mentioned conductive particles include solder particles with a melting point of 150~200°C. The above-mentioned inorganic binder is made of sodium silicate No. 3 according to JIS K1408. main ingredient. 一種發光裝置之製造方法,其於基板之配線圖案之電極上塗佈含有無機黏合劑與導電粒子之異向性導電接著劑,並經由上述異向性導電接著劑使發光元件加熱壓接,上述導電粒子包含熔點為150~200℃之焊料粒子,上述無機黏合劑以依據JIS K1408之矽酸鈉3號作為主成分。 A method for manufacturing a light-emitting device, which comprises coating an anisotropic conductive adhesive containing an inorganic binder and conductive particles on the electrodes of a wiring pattern on a substrate, and thermally bonding a light-emitting element through the above-mentioned anisotropic conductive adhesive. The conductive particles include solder particles with a melting point of 150-200° C., and the above-mentioned inorganic binder uses sodium silicate No. 3 according to JIS K1408 as a main component.
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