JP5983836B2 - Semiconductor device - Google Patents

Description

  The present invention relates to a semiconductor device.

  Various bonding methods for mounting semiconductor elements such as transistors, ICs, and LSIs are known. Also, various bonding methods suitable for semiconductor light-emitting elements that emit light, such as light-emitting diodes (hereinafter also referred to as “LEDs”) and laser diodes (hereinafter also referred to as “LDs”), are known.

  Conventionally, die attachment methods for semiconductor elements are roughly classified into a joining method using an epoxy resin adhesive (hereinafter referred to as “resin joining”), and joining with a eutectic metal having a eutectic point at a high temperature of 300 ° C. or higher. There are two methods (hereinafter referred to as “eutectic bonding”). The proper use is determined in consideration of the consistency of thermal expansion behavior with the lead frame material or substrate material on which the semiconductor element is mounted, reliability, price, and the like. For example, resin bonding is used for light emitting diodes for liquid crystal backlights, etc. for small portable devices where priority is given to prices, and for light emitting diodes for lighting that require a long life and laser diodes that require high reliability. Crystal bonding is commonly used.

  AuSn eutectic is known as eutectic bonding. A method of producing this AuSn eutectic using a composition of Au and Sn is known. When this Au and Sn composition is used, the obtained semiconductor device has characteristics of low electrical resistivity and high thermal conductivity. On the other hand, when using the composition of Au and Sn, a high temperature of 300 ° C. or higher is necessary for bonding. For this reason, it is difficult to withstand high temperatures in commonly used resin packages such as PPA (polyphthalamide), and a composition of Au and Sn cannot be used. In addition, even when silver plating having high reflectivity is applied to the surface of the wiring board or lead frame on which the light emitting diode is mounted, the eutectic metal has low light reflectivity, and thus the light extraction effect cannot be improved. .

  In order to solve these drawbacks, a joining method using a silver layer and a silver layer has been recently developed (for example, Patent Document 1). According to this bonding method, silver or silver oxide applied to the surface of the substrate and silver or silver oxide applied to the surface of the semiconductor element can be bonded by applying a temperature of 200 to 900 ° C.

International Application No. 2010/084746 Pamphlet

  The present invention is a semiconductor device in which a semiconductor element and a substrate are bonded using a silver layer and a silver layer, and an object thereof is to further improve the bonding strength between the semiconductor element and the substrate.

In the present invention, a first underlayer having at least one metal selected from the group consisting of titanium, platinum, gold, and ruthenium is independently formed on the surface of the substrate, and the first silver layer is formed on the first silver layer. Forming on the surface of the underlayer of 1;
Independently, a second underlayer having at least one metal selected from the group consisting of titanium, platinum, gold and ruthenium is formed on the surface of the semiconductor element, and a second silver layer is formed under the second lower layer. Forming on the surface of the formation;
Arranging the first silver layer and the second silver layer in contact with each other;
Adding a temperature of 150 ° C. to 900 ° C. to the substrate and the semiconductor element, and bonding the first silver layer and the second silver layer ,
Before forming the second underlayer on the surface of the semiconductor element,
The present invention relates to a method for manufacturing a semiconductor device in which a second barrier layer is further disposed between the second underlayer and the semiconductor element .
In the present invention, a first underlayer having at least one metal selected from the group consisting of titanium, platinum, gold, and ruthenium is independently formed on the surface of the substrate, and the first silver layer is formed. Forming on the surface of the first underlayer;
Independently, a second underlayer having at least one metal selected from the group consisting of titanium, platinum, gold and ruthenium is formed on the surface of the semiconductor element, and a second silver layer is formed under the second lower layer. Forming on the surface of the formation;
Arranging the first silver layer and the second silver layer in contact with each other;
Adding a temperature of 150 ° C. to 900 ° C. to the substrate and the semiconductor element, and bonding the first silver layer and the second silver layer,
At least one of the first silver layer and the second silver layer is a silver layer having a peak intensity of (2 0 0) plane / a peak intensity of (1 1 1) plane of 0.0013 or more. The present invention relates to a method of manufacturing a semiconductor device using
At least one abnormally grown grain of silver is present at the interface between the first silver layer and the second silver layer.

  The semiconductor device of the present invention has an advantage that the bonding strength between the semiconductor element and the substrate is high.

FIG. 1 is a schematic cross-sectional view showing a mounted state of the semiconductor light emitting device according to the first embodiment. FIG. 2 is a schematic cross-sectional view showing a mounted state of the semiconductor light emitting element according to the second embodiment. FIG. 3 is a schematic cross-sectional view showing a mounted state of the semiconductor light emitting device according to the third embodiment. FIG. 4 shows an X-ray crystal diffraction diagram of the silver layer of the semiconductor light emitting device in Examples 4, 5 and 6. FIG. 5 is a cross-sectional SEM reflected electron image of the mounted state of the semiconductor light emitting device in Example 11.

  When joining the first silver layer applied to the surface of the substrate and the second silver layer applied to the surface of the semiconductor element, the inventors of the present invention have a relationship between the substrate and the first silver layer. A first underlayer is disposed between the semiconductor element and the second silver layer, and the first and second underlayers are specified. It has been found that the bonding strength between the obtained base and the semiconductor element is improved when it is made of the above metal. Moreover, in such a semiconductor device, it has also been found that at least one abnormally grown grain of silver exists at the interface between the first silver layer and the second silver layer. Based on these findings, the present inventors have disclosed a semiconductor device in which a semiconductor element and a substrate are bonded using a silver layer and a silver layer, and the bonding strength between the semiconductor element and the substrate is further improved. Was completed.

  In such a semiconductor device of the present invention, the die shear strength is, for example, 3 MPa or more, preferably 20 MPa or more. In order to secure the reliability of the semiconductor device and reduce the deterioration of the initial characteristics of the semiconductor device, the die shear strength is more preferably 120 MPa or more. The die shear strength can be measured, for example, by applying a shearing force to the semiconductor device in the direction in which the semiconductor element is peeled off from the substrate, and measuring the strength when peeled off at room temperature.

  Furthermore, the present inventors have found that such a semiconductor device has improved heat resistance.

  In the semiconductor device of the present invention, at least one abnormally grown grain of silver exists at the interface between the first silver layer and the second silver layer. These abnormally grown grains of silver are grains having a remarkably strong peak intensity on the (200) plane in the X-ray crystal analysis. Silver growth includes normal grain growth in which the entire structure grows on average, and abnormal grain growth in which a small number of specific grains eat surrounding crystal grains and become explosively large. Both are distinguished by the change in particle size distribution with increasing annealing time. The following (a) is normal grain growth, and (b) is abnormal grain growth.

  In the semiconductor device of the present invention, it is preferable that a first barrier layer is disposed between the first base layer and the substrate. When such a first barrier layer is arranged, silver can be prevented from diffusing from the first silver layer to the substrate, and as a result, peeling between the first silver layer and the substrate can be prevented. Can be preferred. This first barrier layer is preferably formed from platinum, ruthenium, palladium, gold, tungsten, molybdenum or oxides thereof. The first underlayer preferably has a function as a first barrier layer. This is because if one layer can have two functions, the semiconductor device can be prevented from increasing in thickness. Moreover, it is preferable that the 1st contact | adherence layer is arrange | positioned between the said 1st barrier layer and the said base | substrate. Such a first adhesion layer is for enhancing the adhesion between the first barrier layer and the substrate.

  In the semiconductor device of the present invention, it is preferable that a second barrier layer is disposed between the second underlayer and the semiconductor element. When such a second barrier layer is disposed, it is possible to prevent the voids from diffusing from the second silver layer to the semiconductor element. As a result, the second silver layer and the semiconductor element are peeled off. Can be prevented, which is preferable. This second barrier layer is preferably formed from platinum, ruthenium, palladium, gold, tungsten, molybdenum or oxides thereof. The second underlayer preferably has a function as a second barrier layer. This is because if one layer can have two functions, the semiconductor device can be prevented from increasing in thickness. In addition, it is preferable that a second adhesion layer is disposed between the second barrier layer and the semiconductor element. Such a second adhesion layer is for enhancing the adhesion between the second barrier layer and the semiconductor element.

  In the semiconductor device of the present invention, the semiconductor element is preferably a semiconductor light emitting element.

  The semiconductor device of the present invention is manufactured by, for example, a method for manufacturing a semiconductor device in which a first silver layer applied to the surface of a substrate and a second silver layer applied to the surface of a semiconductor element are joined. can do. Such a manufacturing method includes a step of arranging the first silver layer and the second silver layer in contact with each other, applying a temperature of 150 ° C. to 900 ° C. to the semiconductor element and the substrate, Joining the substrate. In this manufacturing method, a first underlayer is disposed between the base body and the first silver layer, and a second underlayer is disposed between the semiconductor element and the second silver layer. The first underlayer and the second underlayer are each independently formed of a metal selected from the group consisting of titanium, platinum, gold, and ruthenium, and the first silver layer and the second underlayer are formed. At least one abnormally grown grain of silver is present at the interface with the silver layer.

  The base layer (hereinafter referred to as both the first base layer and the second base layer unless otherwise stated) is formed of a metal selected from the group consisting of titanium, platinum, gold and ruthenium as described above. . The underlayer is preferably formed from a metal selected from the group consisting of titanium and platinum, and more preferably from a metal selected from the group consisting of titanium. When the underlayer is disposed, the peak intensity of the (200) plane of the silver layer in X-ray crystal diffraction is increased and the peak intensity of the (111) plane is decreased. Furthermore, the peak intensity of the (200) plane of the silver layer / the peak intensity of the (111) plane in the X-ray crystal diffraction when the base layer is disposed is high in the order of titanium> platinum> gold, and this order is the silver layer. It was also consistent with the high bonding strength. Accordingly, the higher the (200) plane peak intensity / (111) plane peak intensity of the silver layer in the X-ray crystal diffraction when the underlayer is disposed, the higher the bonding strength with the silver layer.

  When the adhesion between the underlayer and the substrate or the semiconductor element is poor, it is preferable to provide an adhesion layer between the underlayer and the substrate or between the underlayer and the semiconductor element in order to improve this. The adhesion layer is preferably formed from a metal selected from the group consisting of titanium, nickel, aluminum, and tantalum, more preferably formed from a metal selected from the group consisting of titanium and nickel. More preferably, it is formed from a metal selected from the group.

  The thickness of the adhesion layer is, for example, 0.005 to 5 μm, preferably 0.01 to 2 μm, more preferably 0.03 to 0.1 μm. This is because if the thickness of the adhesion layer is 0.005 to 5 μm, the bonding strength between the substrate or the semiconductor element and the base layer is increased.

  The thickness of the underlayer is, for example, 0.005 to 5 μm, preferably 0.01 to 2 μm, more preferably 0.03 to 0.5 μm. This is because if the thickness of the underlayer is 0.005 to 5 μm, the bonding strength between the first silver layer and the second silver layer is increased. The thickness of the first underlayer and the second underlayer may be the same or different. The thickness of the first base layer is, for example, 0.005 to 5 μm, preferably 0.01 to 2 μm, and more preferably 0.03 to 0.5 μm. This is because the bonding strength between the first silver layer and the second silver layer is high when the thickness of the first underlayer is 0.005 to 5 μm. The thickness of the second underlayer is, for example, 0.005 to 5 μm, preferably 0.01 to 2 μm, and more preferably 0.03 to 0.5 μm. This is because the bonding strength between the first silver layer and the second silver layer is high when the thickness of the second underlayer is 0.005 to 5 μm.

  The underlayer can be formed, for example, by vapor deposition, sputtering, plating, or the like. When the silver layer is formed by vapor deposition, the underlayer is preferably formed by vapor deposition. This is because when the underlayer is formed by vapor deposition, the bonding strength between the base layer and the semiconductor element is increased as a result of increasing the bonding strength with the silver layer. When the silver layer is formed by sputtering, the underlayer is preferably formed by sputtering. This is because, when the underlayer is formed by sputtering, the bonding strength between the base layer and the semiconductor element increases as a result, the bonding strength between the base layer and the semiconductor element increases. When the silver layer is formed by plating, the underlayer may be formed by any method.

  The thicknesses of the first silver layer and the second silver layer may be the same or different. The thickness of the first silver layer is, for example, 0.5 μm to 10 μm, preferably 0.1 μm to 5 μm, and more preferably 2 μm to 5 μm. When the thickness of the first silver layer is 0.5 μm to 10 μm, the bonding strength between the first silver layer and the second silver layer is increased, and as a result, the bonding strength between the substrate and the semiconductor element is high. It is to become. The thickness of the second silver layer is, for example, 0.5 μm to 10 μm, preferably 0.1 μm to 5 μm, more preferably 2 μm to 5 μm. When the thickness of the second silver layer is 0.5 μm to 10 μm, the bonding strength between the first silver layer and the second silver layer is increased, and as a result, the bonding strength between the substrate and the semiconductor element is high. It is to become.

  The silver layer can be formed, for example, by vapor deposition, sputtering, plating, or the like, and is preferably formed by sputtering. When the silver layer is formed by sputtering, the bonding strength between the substrate and / or the semiconductor element is increased, and as a result, the bonding strength between the substrate and the semiconductor element is increased.

  When the first silver layer and the second silver layer are formed by sputtering, the deposition rates may be the same or different. The film formation rate of the first silver layer is, for example, 20 to 400 Å / second, preferably 50 to 400 Å / second, and more preferably 300 to 400 Å / second. When the deposition rate of the first silver layer is 20 to 400 liters / second, the bonding strength between the first silver layer and the second silver layer is increased, and as a result, the bonding strength between the substrate and the semiconductor element is increased. This is because of the increase. The film formation rate of the second silver layer is, for example, 20 to 400 Å / second, preferably 50 to 400 Å / second, and more preferably 300 to 400 Å / second. When the deposition rate of the second silver layer is 20 to 400 Å / sec, the bonding strength between the first silver layer and the second silver layer is increased, and as a result, the bonding strength between the substrate and the semiconductor element is increased. This is because of the increase.

  In the method for manufacturing a semiconductor device, it is preferable that a first barrier layer is disposed between the first base layer and the base. This first barrier layer is preferably formed from platinum, ruthenium, palladium, gold, tungsten, molybdenum or oxides thereof. When this barrier layer is disposed, it is possible to suppress the diffusion of voids from the first silver layer, and as a result, the bonding strength between the first silver layer and the substrate is increased.

  In the manufacturing method of the semiconductor device, it is preferable that a second barrier layer is disposed between the second underlayer and the semiconductor element. This second barrier layer is preferably formed from platinum, ruthenium, palladium, gold, tungsten, molybdenum or oxides thereof. When this barrier layer is disposed, it is possible to suppress the diffusion of voids from the second silver layer, and as a result, the bonding strength between the second silver layer and the semiconductor element is increased.

  In the method for manufacturing a semiconductor device, the bonding step is preferably performed in the air or in an oxygen atmosphere. By joining in such an atmosphere, the joining point of silver increases and it can anticipate the improvement of the joint strength of a 1st silver layer and a 2nd silver layer.

  The method for manufacturing a semiconductor device preferably further includes a step of applying an organic solvent or water between the first silver layer and the second silver layer. When applying, an organic solvent or water may be applied onto the substrate, and a semiconductor element may be mounted thereon. This makes it possible to maintain the mounting position accuracy of the semiconductor element until the subsequent bonding step due to the surface tension of the organic solvent or water. In this case, the organic solvent preferably has a boiling point of 100 ° C to 300 ° C. This is because if the boiling point is 100 ° C. or higher, the organic solvent does not easily evaporate, and the mounting position accuracy of the semiconductor element can be easily maintained. In addition, if the organic solvent remains even after the subsequent bonding step, it causes bonding failure. Therefore, the boiling point of the organic solvent is preferably lower than the heating temperature, and is 300 ° C. or lower in order to volatilize quickly without thermal decomposition. Is preferred. Examples of the organic solvent include one or more selected from the group consisting of 2-ethyl-1,3-hexanediol, glycerin, ethylene glycol, diethylene glycol, diethylene glycol monobutyl ether, diethylene glycol monoethyl ether, and triethylene glycol. .

In the semiconductor device and the manufacturing method thereof, the semiconductor element has a semiconductor layer formed on a translucent inorganic substrate, and the translucent inorganic substrate is opposite to the side on which the semiconductor layer is formed. The first silver is applied to the side, a buffer member to be joined to the first silver is provided, and the surface of the buffer member is applied with the silver or silver oxide. Can do.

  In the semiconductor device and the manufacturing method thereof, a semiconductor light emitting element may be used as the semiconductor element. Silver has the best visible light reflectance among metals, and applying a silver coating to the surface of a semiconductor element also provides a highly efficient reflector in the semiconductor element, making it the most suitable form for a semiconductor light emitting element. . Further, by applying silver coating to the surface of the substrate, the entire semiconductor device can be made into a reflecting mirror structure, and light can be extracted with higher efficiency. A light-transmitting inorganic substrate that can be used for a semiconductor light-emitting element has extremely low light absorption and can be used for manufacturing a semiconductor light-emitting element having high light emission efficiency. As a semiconductor light emitting element, for example, a light emitting layer which is a semiconductor layer is formed on an upper surface of a light transmitting inorganic substrate, and the light emitting layer is arranged to be an upper surface, to a light transmitting inorganic substrate which is a back surface on the opposite side. Silver or silver oxide is used. With such a semiconductor light emitting element, light emitted from the light emitting layer can be reflected with high efficiency, and a semiconductor device having a large light output can be obtained.

  According to this manufacturing method, high luminous efficiency can be imparted to a semiconductor device using a semiconductor light emitting element such as a light emitting diode or a laser diode. Moreover, according to this manufacturing method, since a low electrical resistance and thermal resistance can be obtained without using a bonding material such as a resin, reliability can be improved. Moreover, according to this manufacturing method, since it is possible to join in a temperature region that is the same as that of resin joining, it is possible to avoid thermal deterioration of the plastic member used in the semiconductor device. According to this manufacturing method, since the resin is not used for the joining member, the life of the semiconductor device can be improved. Furthermore, according to this manufacturing method, since the process is simple and the amount of noble metal used is extremely small, a semiconductor device can be manufactured at low cost.

  The substrate can be a lead frame or an organic or inorganic substrate provided with metal wiring, and the surface of the lead frame or the surface of the metal wiring may be coated with silver. The surface of the bonding surface of the semiconductor element is coated with silver in the same manner as the base, and it does not matter whether it is a conductive part or an insulating part.

  In this manufacturing method, it is possible to increase the bonding point by applying a temperature of 150 ° C. to 900 ° C. to the substrate and the semiconductor element, and to make the bonding strong and bonded by interdiffusing silver. Metal diffusion is a function of temperature, so the higher the temperature, the faster the joint strength can be improved. However, the melting point of a thermoplastic resin commonly used to avoid oxidative degradation or melting of plastic members used in semiconductor devices. It is desirable to set the upper limit around 350 ° C. as the upper limit. However, when a ceramic substrate having heat resistance is used for the substrate, the temperature can be increased to around 400 ° C. The lower limit temperature is preferably 200 ° C. or higher in order to obtain strong bonding within a practical time range. Therefore, a temperature of 200 ° C. to 350 ° C. can be applied to the semiconductor element and the substrate to bond the semiconductor element and the substrate, but it is preferable to apply a temperature of 200 ° C. to 250 ° C. The heating time is, for example, 0.5 to 4 hours, preferably 1 to 2 hours. This joining process does not need to be a single step, and can be a multi-step process in which the temperature is gradually raised and the vertical movement is repeated.

  Die shear strength depends on the heating temperature and heating time at the time of bonding. The higher the temperature, the longer the strength, but the strength improves. However, the temperature is low considering the manufacturing cost and the oxidative deterioration of plastic members used in semiconductor devices. The shorter the time, the more advantageous. Therefore, the die shear strength can be adjusted by setting the heating temperature to 150 ° C. to 350 ° C., preferably 150 ° C. to 300 ° C., more preferably 200 ° C. to 250 ° C., and arbitrarily setting the heating time. Practically, it is necessary to withstand ultrasonic shock during wire bonding and thermal shock test of a semiconductor device, and 13 MPa is required at the minimum, and the upper limit is preferably 140 MPa at which die shear strength is saturated at 350 ° C. heating. .

<Semiconductor device>
(Semiconductor device according to the first embodiment)
An example of the semiconductor device according to the first embodiment will be described with reference to the drawings. FIG. 1 is a schematic cross-sectional view showing a mounted state of the semiconductor light emitting device according to the first embodiment. Although a semiconductor light emitting element using a light emitting diode will be described as a semiconductor element, the present invention can be applied to transistors, ICs, LSIs, and the like other than the semiconductor light emitting element.

  In the semiconductor device, a silver layer 530 applied to the surface of the substrate 500 and a silver layer 140 applied to the surface of the semiconductor light emitting element 100 are directly joined. “Direct” means that a resin adhesive is not included between the silver layer 530 and the silver layer 140 in this specification.

  The semiconductor light emitting device 100 was applied to the side opposite to the side on which the semiconductor layer 120 is formed, the translucent inorganic substrate 110, the semiconductor layer 120 that emits light, the electrode 130 provided on the semiconductor layer 120, and the semiconductor layer 120. The reflective layer 160 includes a base layer 150 applied to the surface of the reflective layer 160, and a silver layer 140 applied to the surface of the base layer. The semiconductor layer 120 has an n-type semiconductor layer 121 stacked on a light-transmitting inorganic substrate 110 and a p-type semiconductor layer 122 stacked on the n-type semiconductor layer 121. In the electrode 130, an n-type electrode 131 is provided on the n-type semiconductor layer 121, and a p-type electrode 132 is provided on the p-type semiconductor layer 122. The semiconductor light emitting device 100 has a flip chip structure having an n-type electrode 131 and a p-type electrode 132 on the same surface side. The silver layer 140 applied to the surface of the semiconductor light emitting device 100 may be not only one layer but also two or more layers. Further, the film thickness of the silver layer 140 applied to the surface of the semiconductor light emitting device 100 is, for example, about 0.5 μm to 10 μm. The reflective layer 160 is preferably provided in order to efficiently reflect the light of the semiconductor layer 120. The reflective layer 160 is, for example, a silver layer, and may have a thickness that can reflect light of 85% or more, preferably 90% or more, for example, 0.05 μm or more, and can be arbitrarily adjusted. Note that the reflective layer 160 may not be arranged in the first embodiment.

  The base 500 has a base layer 520 on the surface of the substrate 510. A silver layer 530 is provided on the surface of the base layer 520. The substrate 510 may be conductive or insulating. Examples of the conductive member used for the substrate 510 include a lead frame such as copper or iron. The film thickness of the silver layer 530 applied to the surface of the substrate 510 is, for example, about 0.5 μm to 10 μm.

  On the other hand, examples of the insulating member used for the substrate 510 include a glass epoxy substrate, a resin member such as polyphthalamide or liquid crystal polymer, and a ceramic member. When these insulating members are used for the substrate 510, predetermined circuit wiring is performed on the glass epoxy substrate, and the silver layer 530 is applied to the circuit wiring.

  The shape of the substrate 500 can take various forms such as a flat plate shape and a cup shape. In view of easy mounting of the semiconductor light emitting device 100, it is preferable to use a flat plate as the shape of the substrate 500. Further, in order to improve the light extraction efficiency from the semiconductor light emitting device 100, the base body 500 can also take a cup shape. When the base body 500 has a cup shape, a part of the conductive wiring can be exposed as a terminal outside the base body 500. A semiconductor light emitting element having the same function or a semiconductor element having a different function can be mounted on the substrate 500. An electronic element such as a resistance element or a capacitor can be mounted on the substrate 500.

  The electrode 130 provided in the semiconductor light emitting device 100 is wired with a gold wire or the like for a predetermined electrical connection. In addition, the semiconductor light emitting element 100 can be covered with a sealing member including a phosphor, a filler, a light diffusing member, and the like that absorb light from the semiconductor light emitting element 100 and convert it to a different wavelength, whereby a semiconductor device can be obtained.

(Method for manufacturing semiconductor device)
When the semiconductor light emitting device 100 is mounted on the substrate 500, the silver layer 140 applied to the surface of the semiconductor light emitting device 100 is disposed on the silver layer 530 applied to the surface of the substrate 500. There is no solder or resin between the silver layer 530 applied to the surface of the substrate 500 and the silver layer 140 applied to the surface of the semiconductor light emitting device 100. The substrate 500 is provided with predetermined circuit wiring on a substrate 510, and a silver layer 530 is applied on the outermost surface of the circuit wiring. For positioning the semiconductor light emitting element 100, a circuit wiring having the same shape as the outer shape of the semiconductor light emitting element 100 is formed, a circuit wiring having a substantially same shape slightly smaller than the outer shape of the semiconductor light emitting element 100 is formed, Circuit wirings whose apexes extend to the four corners of the semiconductor light emitting device 100 can be formed, and various shapes can be formed.

  A temperature of 150 ° C. to 900 ° C. is applied to the semiconductor light emitting device 100 and the substrate 500 to bond the semiconductor light emitting device 100 and the substrate 500. The temperature applied to the semiconductor light emitting device 100 and the substrate 500 is preferably 200 ° C. or higher so that it can be firmly bonded. The temperature is not particularly limited as long as the semiconductor light emitting device 100 is not destroyed, but may be 900 ° C. or lower, which is a temperature lower than the melting point of silver, and is preferably 400 ° C. or lower. Further, the temperature that the semiconductor light emitting device 100 and the package can withstand is particularly preferably 350 ° C. or lower. The bonding step can be performed in the air or in an oxygen atmosphere. Although it is preferable that the time required for bonding is also long, it is not particularly limited, and may be about 30 minutes to 4 hours. After mounting the semiconductor light emitting element 100 on the base body 500, wire connection is performed, and the semiconductor device can be formed by covering with a sealing member.

(Semiconductor device according to the second embodiment)
An example of a semiconductor device according to the second embodiment will be described with reference to the drawings. FIG. 2 is a schematic cross-sectional view showing a mounted state of the semiconductor light emitting device according to the second embodiment. Since the semiconductor device according to the first embodiment and the substrate are substantially the same except for the base, a part of the description may be omitted.

  In the semiconductor device, a silver layer 640 applied to the surface of the substrate 600 and a silver layer 240 applied to the surface of the semiconductor light emitting element 200 are directly bonded.

  The semiconductor light emitting device 200 was applied to the side opposite to the side on which the semiconductor layer 220 is formed, the translucent inorganic substrate 210, the semiconductor layer 220 that emits light, the electrode 230 provided on the semiconductor layer 220, and the semiconductor layer 220. It has a barrier layer 260, a base layer 250 applied to the surface of the barrier layer 260, and a silver layer 240 applied to the surface of the base layer. The semiconductor layer 220 includes an n-type semiconductor layer 221 stacked on a light-transmitting inorganic substrate 210 and a p-type semiconductor layer 222 stacked on the n-type semiconductor layer 221. In the electrode 230, an n-type electrode 231 is provided on the n-type semiconductor layer 221, and a p-type electrode 232 is provided on the p-type semiconductor layer 222. The semiconductor light emitting device 200 has a flip chip structure having an n-type electrode 231 and a p-type electrode 232 on the same surface side. The silver layer 240 applied to the surface of the semiconductor light emitting element 200 may be not only one layer but also two or more layers. The film thickness of the silver layer 240 applied to the surface of the semiconductor light emitting device 200 is, for example, about 0.5 μm to 10 μm.

  The base 600 has a barrier layer 620 on the surface of the substrate 610. A base layer 630 is provided on the surface of the barrier layer 620. A silver layer 640 is applied to the surface of the base layer 630. The substrate 610 may be conductive or insulating. Examples of the conductive member used for the substrate 610 include a lead frame such as copper or iron. The film thickness of the silver layer 640 applied to the surface of the substrate 610 is, for example, about 0.5 μm to 10 μm.

In the second embodiment, barrier layers are provided on the semiconductor element side and both sides of the substrate. However, the barrier layer 260 may be provided on the semiconductor element side, and the barrier layer 620 may not be provided on the substrate side. Alternatively, the barrier layer 260 may not be provided on the semiconductor element side, and the barrier layer 620 may be provided on the substrate side.

(Semiconductor device according to the third embodiment)
An example of a semiconductor device according to the third embodiment will be described with reference to the drawings. FIG. 3 is a schematic cross-sectional view showing a mounted state of the semiconductor light emitting device according to the third embodiment. Since the semiconductor device according to the first embodiment and the substrate are substantially the same except for the base, a part of the description may be omitted.

  In the semiconductor device, a silver layer 750 applied to the surface of the substrate 700 and a silver layer 340 applied to the surface of the semiconductor light emitting element 300 are directly bonded.

  The semiconductor light emitting device 300 was applied to the side opposite to the side where the semiconductor layer 320 is formed, the translucent inorganic substrate 310, the semiconductor layer 320 that emits light, the electrode 330 provided on the semiconductor layer 320 It has an adhesion layer 370, a barrier layer 360 applied to the surface of the adhesion layer 370, an underlayer 350 applied to the surface of the barrier layer 360, and a silver layer 340 applied to the surface of the underlayer 350. The semiconductor layer 320 includes an n-type semiconductor layer 321 stacked on a light-transmitting inorganic substrate 310 and a p-type semiconductor layer 322 stacked on the n-type semiconductor layer 321. In the electrode 330, an n-type electrode 331 is provided on the n-type semiconductor layer 321, and a p-type electrode 332 is provided on the p-type semiconductor layer 322. The semiconductor light emitting device 300 has a flip chip structure having an n-type electrode 331 and a p-type electrode 332 on the same surface side. The silver layer 340 applied to the surface of the semiconductor light emitting device 300 may be not only one layer but also two or more layers. The film thickness of the silver layer 340 applied to the surface of the semiconductor light emitting device 300 is, for example, about 0.5 μm to 10 μm.

  The base 700 has an adhesion layer 720 on the surface of the substrate 710. A barrier layer 730 is provided on the surface of the adhesion layer 720. A base layer 740 is provided on the surface of the barrier layer 730. A silver layer 750 is provided on the surface of the base layer 740. The substrate 710 may be conductive or insulating. Examples of the conductive member used for the substrate 710 include a lead frame such as copper or iron. Note that when the underlayer is formed of platinum or ruthenium, such an underlayer can also serve as a barrier layer. The adhesion layer is preferably provided in order to improve the bonding strength between the base layer and the substrate or between the barrier layer and the substrate. For example, when the underlayer or the barrier layer is formed of platinum, gold, or ruthenium, it is preferable that an adhesion layer is disposed between the underlayer and the base or between the barrier layer and the base. The adhesion layer is preferably formed from titanium. The film thickness of the silver layer 740 applied to the surface of the substrate 710 is, for example, about 0.5 μm to 10 μm.

  In the third embodiment, a barrier layer and an adhesion layer are provided on the semiconductor element side and both sides of the substrate, but a barrier layer 360 and an adhesion layer 370 are provided on the semiconductor element side, and a barrier is provided on the substrate side. The layer 730 and the adhesion layer 720 may not be provided, or the barrier layer 360 and the adhesion layer 370 may not be provided on the semiconductor element side, and the barrier layer 730 and the adhesion layer 720 may be provided on the substrate side. Further, a barrier layer 360 is provided on the semiconductor element side and a barrier layer 730 and an adhesion layer 720 are provided on the substrate side, or a barrier layer 360 and an adhesion layer 370 are provided on the semiconductor element side, and the barrier layer 730 is provided on the substrate side. The form provided with may be included as a modification of this form.

(Semiconductor element)
In addition to semiconductor light emitting elements such as light emitting diodes and laser diodes, transistors, ICs, LSIs, Zener diodes, capacitors, light receiving elements, and the like can be used as the semiconductor elements.

The semiconductor light emitting element is, for example, a semiconductor layer laminated on an inorganic substrate. As the inorganic substrate, a substrate having translucency is preferable. A substrate formed of sapphire, GaP, GaN, ITO, ZnO, inorganic glass, ceramics, or the like can be used as the light-transmitting inorganic substrate, and GaAlN, ZnS, ZnSe, SiC, GaP, GaAlAs, or the like can be used as the semiconductor layer. A semiconductor in which a semiconductor such as AlN, InN, AlInGaP, InGaN, GaN, or AlInGaN is formed as a light emitting layer can be used. Examples of the semiconductor structure include a homo structure having a MIS junction, a PIN junction, and a PN junction, a hetero structure, and a double hetero structure. Various emission wavelengths can be selected from ultraviolet light to infrared light depending on the material of the semiconductor layer and the degree of mixed crystal. The light emitting layer may have a single quantum well structure or a multiple quantum well structure which is a thin film in which a quantum effect is generated.

  When considering use in the outdoors, it is preferable to use a gallium nitride compound semiconductor as a semiconductor layer capable of forming a high-luminance semiconductor light-emitting element. In red, a gallium / aluminum / arsenic semiconductor layer or aluminum / indium is used. Although it is preferable to use a gallium / phosphorus-based semiconductor layer, various layers may be used depending on the application.

  When a gallium nitride compound semiconductor is used for the semiconductor layer, a material such as sapphire, spinel, SiC, Si, ZnO, or GaN can be used for the light-transmitting inorganic substrate. In order to form gallium nitride with good crystallinity with high productivity, it is preferable to use sapphire for the light-transmitting inorganic substrate. When the semiconductor light emitting device is used face down, the light transmitting inorganic substrate needs to have high light transmitting properties.

  The electrode is preferably made of a material that does not block light, but a material that blocks light can also be used. In the case of a semiconductor light emitting device having an n-type electrode and a p-type electrode on the same surface side, the p-type electrode is preferably applied so as to occupy a wide area of the semiconductor layer.

  The translucent p-type electrode may be formed of a thin film having a thickness of 150 μm or less. The p-type electrode may be formed of ITO or ZnO other than metal. Here, instead of the translucent p-type electrode, an electrode having a plurality of light extraction openings such as a mesh electrode may be used.

  The shape of the electrode may be a curved shape, a whisker shape, a comb shape, a lattice shape, a branch shape, a saddle shape, a mesh shape, or the like in addition to the linear shape. Since the light shielding effect increases in proportion to the total area of the p-type electrode, it is preferable to design the line width and length of the extended conductive portion so that the light shielding effect does not exceed the light emission enhancing effect. The p-type electrode may be formed of a metal such as Au or Au—Sn, ITO other than the metal, or ZnO. Moreover, it is good also as an electrode form provided with several opening part for light extractions, such as a mesh electrode, instead of a translucent p-type electrode. The size of the semiconductor light emitting element may be arbitrarily determined.

(Substrate)
The substrate has a silver layer on the surface of the substrate. As the substrate, a ceramic substrate containing aluminum oxide, aluminum nitride, zirconium oxide, zirconium nitride, titanium oxide, titanium nitride or a mixture thereof, Cu, Fe, Ni, Cr, Al, Ag, Au, Ti or an alloy thereof is used. A metal substrate, a lead frame, a glass epoxy substrate, a BT resin substrate, a glass substrate, a resin substrate, paper, or the like can be used. Examples of the lead frame include metal frames formed from copper, iron, nickel, chromium, aluminum, silver, gold, titanium, or alloys thereof, and metals formed from copper, iron, or alloys thereof. A frame is preferred. The lead frame is more preferably a copper alloy in a semiconductor device that requires heat dissipation, and an iron alloy in a semiconductor device that requires bonding reliability with a semiconductor element.

The surface of the wiring board or lead frame is made of silver, silver oxide, silver alloy, silver alloy oxide, Pt, Pt alloy, Sn, Sn alloy, gold, gold alloy, Cu, Cu alloy, Rh, Rh alloy, etc. It may be covered, and the outermost surface of the part where the semiconductor element is mounted is covered with a silver layer. These coatings can be performed by plating, vapor deposition, sputtering, printing, coating, or the like.

  A package using a resin can also be used as the substrate. The package may be one in which leads are integrally molded, or one in which circuit wiring is provided by plating after the package is molded. The package can take various forms such as a cup shape and a flat plate shape. As the resin constituting the package, an electrically insulating material having excellent light resistance and heat resistance is suitably used. For example, a thermoplastic resin such as polyphthalamide, a thermosetting resin such as an epoxy resin, a glass epoxy, Ceramics or the like can be used. Moreover, in order to reflect the light from a semiconductor light emitting element efficiently, white pigments, such as a titanium oxide, can be mixed with these resins. As a molding method of the package, insert molding, injection molding, extrusion molding, transfer molding, or the like performed by previously setting the leads in a mold can be used.

(Organic solvent)
The organic solvent may be anything as long as it can fix the semiconductor element in the normal temperature region and no residue remains after heat bonding. The boiling point of the organic solvent is preferably 100 ° C. to 300 ° C., and can be variously selected according to the heating temperature at the time of joining. For example, a lower alcohol having 2 to 10 (20) carbon atoms and 1 to 3 hydroxyl groups to a higher alcohol (for example, n-butanol, i-butanol, sec-butanol, t-butanol, n-pen) Tanol, i-pentanol, sec-pentanol, t-pentanol, 2-methylbutanol, n-hexanol, 1-methylpentanol, 2-methylpentanol, 3-methylpentanol, 4-methylpentanol, From lower alcohols such as 1-ethylbutanol, 2-ethylbutanol, 1,1-dimethylbutanol, 2,2-dimethylbutanol, 3,3-dimethylbutanol, and 1-ethyl-1-methylpropanol, nonanol, decanol, etc. Higher ethyl alcohol); 2-ethyl-1,3-hexanediol, Lysine, ethylene glycol, diethylene glycol, diethylene glycol monobutyl ether, diethylene glycol monoethyl ether, triethylene glycol; hydrocarbon solvents and aliphatic solvents having 8 to 20 carbon atoms (for example, n-heptane, n-octane, n-nonane, n-decane, n-tetradecane, etc.); carboxyl group, alkoxyl group-containing solvent (eg, isopentyl acetate, 2-ethylhexyl acetate, ethyl propionate, etc.); aromatic solvent (eg, toluene, xylene, anisole, phenol, Aniline, monochlorobenzene, dichlorobenzene, etc.); dimethyl sulfoxide (DMSO), N, N-dimethylformamide (DMF) and the like.

(Sealing member)
In order to protect the semiconductor element mounted on the substrate from external force, dust, and the like, a sealing member may be used in the semiconductor device. The light from the semiconductor light emitting element can be efficiently transmitted to the outside by the sealing member. Examples of the resin used for the sealing member include epoxy, phenolic, acrylic, polyimide, silicone, urethane, and thermoplastic. Among these, a silicone type is preferable because a semiconductor device having excellent heat and light resistance and a long life can be manufactured. Examples of the hermetic cover or the non-hermetic cover include a cover formed of inorganic glass, polyacrylic resin, polycarbonate resin, polyolefin resin, polynorbornene resin, or the like. Among these, inorganic glass is preferable because it can manufacture a semiconductor device having excellent heat and light resistance and a long lifetime.

(Other)
The sealing member may contain a fluorescent material, a filler, a light diffusing member, and the like. As the fluorescent material, any nitride fluorescent material that absorbs light from a semiconductor light emitting element and emits fluorescent light having a wavelength different from that of the light can be used, and is mainly activated by a lanthanoid element such as Eu or Ce. Or an oxynitride phosphor, an lanthanoid such as Eu, an alkaline earth halogen apatite phosphor activated mainly by a transition metal element such as Mn, an alkaline earth metal borate phosphor, an alkaline earth Lanthanoids such as metal aluminate phosphor, alkaline earth silicate phosphor, alkaline earth sulfide phosphor, alkaline earth thiogallate phosphor, alkaline earth silicon nitride phosphor, germanate phosphor, Ce Selected from rare earth aluminate phosphors activated mainly by elements, rare earth silicate phosphors, organic and inorganic complexes mainly activated by lanthanoid elements such as Eu It is preferred that at least 1 or more. Examples of fluorescent materials include (Y, Gd) ₃ (Al, Ga) ₅ O ₁₂ : Ce, (Ca, Sr, Ba) ₂ SiO ₄ : Eu, (Ca, Sr) ₂ Si ₅ N ₈ : Eu, CaAlSiN _3. : Eu and the like are more preferable.

  Fillers include alumina, silica, tin oxide, zinc oxide, titanium oxide, magnesium oxide, silicon nitride, boron nitride, aluminum nitride, potassium titanate, mica, calcium silicate, magnesium sulfate, barium sulfate, aluminum borate, glass Flakes as well as fibers can be used. In order to relieve stress, silicone rubber particles and silicone elastomer particles can be used as fillers. The light transmittance is greatly influenced by the filler particle size, and an average particle size of 5 μm or more is preferable, but nanoparticles can also be used. Thereby, the translucency and light dispersibility of a sealing member can be improved significantly.

  Light diffusion members include alumina, silica, tin oxide, zinc oxide, titanium oxide, magnesium oxide, silicon nitride, boron nitride, aluminum nitride, potassium titanate, mica, calcium silicate, magnesium sulfate, barium sulfate, aluminum borate Glass flakes as well as fibers can be used. As the light diffusing member, particles of thermosetting resin such as epoxy resin, silicone resin, benzoguanine resin, and melamine resin can be used. The light diffusion performance is greatly affected by the filler particle size and is preferably in the range of 0.1 to 5 μm. Accordingly, light diffusion can be performed with a small amount of light diffusion member.

  The fluorescent material, filler, and light diffusing member can be coated on the surface of the semiconductor element by printing, potting, electrodeposition, or stamping. The sealing member can be coated on the upper surface. Thereby, when the sealing member has a lens shape, the optical design is facilitated, and a high-quality semiconductor device can be obtained.

<Example>
Hereinafter, a semiconductor device and a method for manufacturing the same according to the present invention will be described using embodiments. Since the semiconductor device according to Examples 1 to 15 overlaps with the semiconductor device according to the first embodiment, there is a part where the description is omitted.

As the semiconductor light emitting device 100, a light-transmitting inorganic substrate 110 using sapphire having a size of 600 μm × 600 μm × thickness 120 μm, an InGaN semiconductor layer 120 stacked on the top surface of the light-transmitting inorganic substrate 110, and a light-transmitting inorganic substrate A titanium layer (underlying layer) 150 formed on the lower surface of 110 by sputtering at 0.03 μm; and a silver layer 140 formed by sputtering on the lower surface of titanium layer 150 at a sputtering rate of 296.1 Å / min and a thickness of 2 μm. Was used. As the substrate 500, a glass substrate 510 of 25 mm × 10 mm × thickness 1 mm, a titanium layer (underlayer) 520 formed by sputtering on the upper surface of the glass substrate 510 with a thickness of 0.1 μm, and a sputtering rate 312 on the upper surface of the titanium layer 520 A silver layer 530 formed by sputtering at a thickness of 1 μm at a rate of 4 mm / min was used.

  The organic solvent 2-ethyl-1,3-hexanediol was applied on the silver layer 530 of the substrate 500, and placed thereon so that the silver layer 140 of the semiconductor light emitting device 100 was in direct contact therewith. After mounting the semiconductor light emitting device 100, the base body 500 was heated and bonded at about 220 ° C. for about 1 hour in an air atmosphere. As a result, the semiconductor light emitting device 100 could be directly bonded to the substrate 500.

  As the semiconductor light emitting device 100, a light-transmitting inorganic substrate 110 using sapphire having a size of 600 μm × 600 μm × thickness 120 μm, an InGaN semiconductor layer 120 stacked on the top surface of the light-transmitting inorganic substrate 110, and a light-transmitting inorganic substrate A titanium layer (underlayer) 150 formed by sputtering on the lower surface of 110 with a thickness of 0.03 μm; and a silver layer 140 formed by sputtering on the lower surface of the titanium layer 150 with a thickness of 2 μm at a sputtering rate of 296.1 ．/min. Was used. As the substrate 500, a glass substrate 510 of 25 mm × 10 mm × thickness 1 mm, a titanium layer (underlayer) 520 formed by sputtering on the upper surface of the glass substrate 510 with a thickness of 0.1 μm, and a sputtering rate 114 on the upper surface of the titanium layer 520 A silver layer 530 formed by sputtering at a thickness of 1 μm at a rate of 4 mm / min was used.

  The organic solvent 2-ethyl-1,3-hexanediol was applied on the silver layer 530 of the substrate 500, and placed thereon so that the silver layer 140 of the semiconductor light emitting device 100 was in direct contact therewith. After mounting the semiconductor light emitting device 100, the base body 500 was heated and bonded at about 220 ° C. for about 1 hour in an air atmosphere. As a result, the semiconductor light emitting device 100 could be directly bonded to the substrate 500.

As the semiconductor light emitting device 100, a light-transmitting inorganic substrate 110 using sapphire having a size of 600 μm × 600 μm × thickness 120 μm, an InGaN semiconductor layer 120 stacked on the top surface of the light-transmitting inorganic substrate 110, and a light-transmitting inorganic substrate A titanium layer (underlayer) 150 formed by sputtering on the lower surface of 110 with a thickness of 0.03 μm; and a silver layer 140 formed by sputtering on the lower surface of the titanium layer 150 with a thickness of 2 μm at a sputtering rate of 296.1 ．/min. Was used. As a base 500, a glass substrate 510 of 25 mm × 10 mm × thickness 1 mm, a titanium layer (underlayer) 520 formed by sputtering on the upper surface of the glass substrate 510 with a thickness of 0.1 μm, and a sputtering rate 52 on the upper surface of the titanium layer 520 And a silver layer 530 formed by sputtering at a thickness of 1 μm at a rate of 8 mm / min.

  The organic solvent 2-ethyl-1,3-hexanediol was applied on the silver layer 530 of the substrate 500, and placed thereon so that the silver layer 140 of the semiconductor light emitting device 100 was in direct contact therewith. After mounting the semiconductor light emitting device 100, the base body 500 was heated and bonded at about 220 ° C. for about 1 hour in an air atmosphere. As a result, the semiconductor light emitting device 100 could be directly bonded to the substrate 500.

  As the semiconductor light emitting device 100, a light-transmitting inorganic substrate 110 using sapphire having a size of 600 μm × 600 μm × thickness 120 μm, an InGaN semiconductor layer 120 stacked on the top surface of the light-transmitting inorganic substrate 110, and a light-transmitting inorganic substrate A titanium layer (underlayer) 150 formed by sputtering on the lower surface of 120 with a thickness of 0.03 μm; and a silver layer 140 formed by sputtering with a thickness of 2 μm on the lower surface of the titanium layer 150 at a sputtering rate of 296.1 Å / min. Was used. As the substrate 500, a glass substrate 510 of 25 mm × 10 mm × 1 mm thickness, a titanium layer (underlayer) 520 formed by sputtering on the upper surface of the glass substrate 510 with a thickness of 0.1 μm, and a sputtering rate 296 on the upper surface of the titanium layer 520 A silver layer 530 formed by sputtering at a thickness of 2 μm at a rate of 1 kg / min was used.

  The organic solvent 2-ethyl-1,3-hexanediol was applied on the silver layer 530 of the substrate 500, and placed thereon so that the silver layer 140 of the semiconductor light emitting device 100 was in direct contact therewith. After mounting the semiconductor light emitting device 100, the base body 500 was heated and bonded at about 220 ° C. for about 2 hours in an air atmosphere. As a result, the semiconductor light emitting device 100 could be directly bonded to the substrate 500.

As the semiconductor light emitting element 300, a light-transmitting inorganic substrate 310 using sapphire having a size of 600 μm × 600 μm × thickness 120 μm, an InGaN semiconductor layer 320 stacked on the top surface of the light-transmitting inorganic substrate 310, and a light-transmitting inorganic substrate A titanium layer (underlayer) 350 formed by sputtering on the lower surface of 320 with a thickness of 0.03 μm; and a silver layer 340 formed by sputtering on the lower surface of the titanium layer 350 with a thickness of 2 μm at a sputtering rate of 296.1 ．/min; Was used. As the substrate 700, a glass substrate 710 having a size of 25 mm × 10 mm × thickness 1 mm, a titanium layer (adhesion layer) 720 formed by sputtering on the upper surface of the glass substrate 710 with a thickness of 0.1 μm, and a thickness of 0. A platinum layer (barrier / underlayer) 740 formed by sputtering at 2 μm and a silver layer 750 formed by sputtering at a sputtering rate of 296.1 Å / min and a thickness of 2 μm on the upper surface of the platinum layer 740 were used.

  An organic solvent 2-ethyl-1,3-hexanediol was applied on the silver layer 750 of the substrate 700, and placed thereon so that the silver layer 340 of the semiconductor light emitting device 300 was in direct contact therewith. After mounting the semiconductor light emitting device 300, the base body 700 was heated and bonded at about 220 ° C. for about 2 hours in an air atmosphere. As a result, the semiconductor light emitting device 300 could be directly bonded to the substrate 700.

  As the semiconductor light emitting element 300, a light-transmitting inorganic substrate 310 using sapphire having a size of 600 μm × 600 μm × thickness 120 μm, an InGaN semiconductor layer 320 stacked on the top surface of the light-transmitting inorganic substrate 310, and a light-transmitting inorganic substrate A titanium layer (underlayer) 350 formed by sputtering on the lower surface of 310 with a thickness of 0.03 μm; and a silver layer 340 formed by sputtering on the lower surface of titanium layer 350 with a thickness of 2 μm at a sputtering rate of 296.1 Å / min; Was used. As the substrate 700, a glass substrate 710 having a size of 25 mm × 10 mm × thickness 1 mm, a titanium layer (adhesion layer) 720 formed by sputtering on the upper surface of the glass substrate 710 with a thickness of 0.1 μm, and a thickness of 0. A platinum layer (barrier layer) 730 formed by sputtering at 2 μm, a gold layer (underlayer) 740 formed by sputtering at a thickness of 0.2 μm on the upper surface of the platinum layer 730, and a sputtering rate 296 on the upper surface of the gold layer 740. A silver layer 750 formed by sputtering at a thickness of 2 μm at a rate of 1 kg / min was used.

  An organic solvent 2-ethyl-1,3-hexanediol was applied on the silver layer 750 of the substrate 700, and placed thereon so that the silver layer 340 of the semiconductor light emitting device 300 was in direct contact therewith. After mounting the semiconductor light emitting device 300, the base body 700 was heated and bonded at about 220 ° C. for about 2 hours in an air atmosphere. As a result, the semiconductor light emitting device 300 could be directly bonded to the substrate 700.

  As the semiconductor light emitting device 100, a light-transmitting inorganic substrate 110 using sapphire having a size of 600 μm × 600 μm × thickness 120 μm, an InGaN semiconductor layer 120 stacked on the top surface of the light-transmitting inorganic substrate 110, and a light-transmitting inorganic substrate A titanium layer (underlayer) 150 formed by sputtering on the lower surface of 120 with a thickness of 0.03 μm; and a silver layer 140 formed by sputtering with a thickness of 2 μm on the lower surface of the titanium layer 150 at a sputtering rate of 296.1 Å / min. Was used. As the substrate 500, a glass substrate 510 of 25 mm × 10 mm × 1 mm thickness, a titanium layer (underlayer) 520 formed by sputtering on the upper surface of the glass substrate 510 with a thickness of 0.1 μm, and a sputtering rate 296 on the upper surface of the titanium layer 520 A silver layer 530 formed by sputtering at a thickness of 5 μm at a rate of 1 kg / min was used.

  The organic solvent 2-ethyl-1,3-hexanediol was applied on the silver layer 530 of the substrate 500, and placed thereon so that the silver layer 530 of the semiconductor light emitting device 100 was in direct contact therewith. After mounting the semiconductor light emitting device 100, the base body 500 was heated and bonded at about 200 ° C. for about 2 hours in an air atmosphere. As a result, the semiconductor light emitting device 100 could be directly bonded to the substrate 500.

  As the semiconductor light emitting device 100, a light-transmitting inorganic substrate 110 using sapphire having a size of 600 μm × 600 μm × thickness 120 μm, an InGaN semiconductor layer 120 stacked on the top surface of the light-transmitting inorganic substrate 110, and a light-transmitting inorganic substrate A titanium layer (underlayer) 150 formed by sputtering on the lower surface of 120 with a thickness of 0.03 μm; and a silver layer 140 formed by sputtering with a thickness of 2 μm on the lower surface of the titanium layer 150 at a sputtering rate of 296.1 Å / min. Was used. As the substrate 500, a glass substrate 510 of 25 mm × 10 mm × 1 mm thickness, a titanium layer (underlayer) 520 formed by sputtering on the upper surface of the glass substrate 510 with a thickness of 0.1 μm, and a sputtering rate 296 on the upper surface of the titanium layer 520 A silver layer 530 formed by sputtering at a thickness of 2 μm at a rate of 1 kg / min was used.

  The organic solvent 2-ethyl-1,3-hexanediol was applied on the silver layer 530 of the substrate 500, and placed thereon so that the silver layer 140 of the semiconductor light emitting device 100 was in direct contact therewith. After mounting the semiconductor light emitting device 100, the base body 500 was heated and bonded at about 200 ° C. for about 2 hours in an air atmosphere. As a result, the semiconductor light emitting device 100 could be directly bonded to the substrate 500.

As the semiconductor light emitting device 100, a light-transmitting inorganic substrate 110 using sapphire having a size of 600 μm × 600 μm × thickness 120 μm, an InGaN semiconductor layer 120 stacked on the top surface of the light-transmitting inorganic substrate 110, and a light-transmitting inorganic substrate A titanium layer (underlayer) 150 formed by sputtering on the lower surface of 120 with a thickness of 0.03 μm; and a silver layer 140 formed by sputtering with a thickness of 2 μm on the lower surface of the titanium layer 150 at a sputtering rate of 296.1 Å / min. Is used. As the substrate 500, a glass substrate 510 of 25 mm × 10 mm × 1 mm thickness, a titanium layer (underlayer) 520 formed by sputtering on the upper surface of the glass substrate 510 with a thickness of 0.1 μm, and a sputtering rate 296 on the upper surface of the titanium layer 520 A silver layer 530 formed by sputtering at a thickness of 2 μm at a rate of 1 mm / min was used.

  The organic solvent 2-ethyl-1,3-hexanediol was applied on the silver layer 530 of the substrate 500, and placed thereon so that the silver layer 140 of the semiconductor light emitting device 100 was in direct contact therewith. After mounting the semiconductor light emitting device 100, the base body 500 was heated and bonded at about 240 ° C. for about 2 hours in an air atmosphere. As a result, the semiconductor light emitting device 100 could be directly bonded to the substrate 500.

  As the semiconductor light emitting element 300, a light-transmitting inorganic substrate 310 using sapphire having a size of 600 μm × 600 μm × thickness 120 μm, an InGaN semiconductor layer 320 stacked on the top surface of the light-transmitting inorganic substrate 310, and a light-transmitting inorganic substrate A titanium layer (underlayer) 350 formed by sputtering on the lower surface of 310 with a thickness of 0.03 μm; and a silver layer 340 formed by sputtering on the lower surface of titanium layer 350 with a thickness of 2 μm at a sputtering rate of 296.1 Å / min; Was used. As the substrate 700, a glass substrate 710 having a size of 25 mm × 10 mm × thickness 1 mm, a titanium layer (adhesion layer) 720 formed by sputtering on the upper surface of the glass substrate 710 with a thickness of 0.1 μm, and a thickness of 0. A platinum layer (barrier / underlayer) 740 formed by sputtering at 2 μm and a silver layer 750 formed by sputtering at a sputtering rate of 296.1 Å / min and a thickness of 2 μm on the upper surface of the platinum layer 740 were used.

  An organic solvent 2-ethyl-1,3-hexanediol was applied on the silver layer 750 of the substrate 700, and placed thereon so that the silver layer 340 of the semiconductor light emitting device 300 was in direct contact therewith. After mounting the semiconductor light emitting device 300, the base body 700 was heated and bonded at about 240 ° C. for about 2 hours in an air atmosphere. As a result, the semiconductor light emitting device 300 could be directly bonded to the substrate 700.

  As the semiconductor light emitting element 300, a light-transmitting inorganic substrate 310 using sapphire having a size of 600 μm × 600 μm × thickness 120 μm, an InGaN semiconductor layer 320 stacked on the top surface of the light-transmitting inorganic substrate 310, and a light-transmitting inorganic substrate A titanium layer (underlayer) 350 formed by sputtering on the lower surface of 310 with a thickness of 0.03 μm; and a silver layer 340 formed by sputtering on the lower surface of titanium layer 350 with a thickness of 2 μm at a sputtering rate of 296.1 Å / min; Was used. As the substrate 700, a glass substrate 710 having a size of 25 mm × 10 mm × thickness 1 mm, a titanium layer (adhesion layer) 720 formed by sputtering on the upper surface of the glass substrate 710 with a thickness of 0.1 μm, and a thickness of 0. A ruthenium layer (barrier and underlayer) 740 formed by sputtering at 2 μm and a silver layer 750 formed by sputtering at a sputtering rate of 296.1 Å / min and a thickness of 2 μm on the upper surface of the ruthenium layer 740 were used.

  An organic solvent 2-ethyl-1,3-hexanediol was applied on the silver layer 750 of the substrate 700, and placed thereon so that the silver layer 340 of the semiconductor light emitting device 300 was in direct contact therewith. After mounting the semiconductor light emitting device 300, the base body 700 was heated and bonded at about 240 ° C. for about 2 hours in an air atmosphere. As a result, the semiconductor light emitting device 300 could be directly bonded to the substrate 700.

  As the semiconductor light emitting element 300, a light-transmitting inorganic substrate 310 using sapphire having a size of 600 μm × 600 μm × thickness 120 μm, an InGaN semiconductor layer 320 stacked on the top surface of the light-transmitting inorganic substrate 310, and a light-transmitting inorganic substrate A titanium layer (underlayer) 350 formed by sputtering on the lower surface of 310 with a thickness of 0.03 μm; and a silver layer 340 formed by sputtering on the lower surface of titanium layer 350 with a thickness of 2 μm at a sputtering rate of 296.1 Å / min; Was used. As the substrate 700, a glass substrate 710 having a size of 25 mm × 10 mm × thickness 1 mm, a titanium layer (adhesion layer) 720 formed by sputtering on the upper surface of the glass substrate 710 with a thickness of 0.1 μm, and a thickness of 0. A platinum layer (barrier layer) 730 formed by sputtering at 2 μm, a gold layer (underlayer) 740 formed by sputtering at a thickness of 0.2 μm on the upper surface of the platinum layer 730, and a sputtering rate 296 on the upper surface of the gold layer 740. A silver layer 750 formed by sputtering at a thickness of 2 μm at a rate of 1 kg / min was used.

  An organic solvent 2-ethyl-1,3-hexanediol was applied on the silver layer 750 of the substrate 700, and placed thereon so that the silver layer 340 of the semiconductor light emitting device 300 was in direct contact therewith. After mounting the semiconductor light emitting device 300, the base body 700 was heated and bonded at about 200 ° C. for about 2 hours in an air atmosphere. As a result, the semiconductor light emitting device 200 could be directly bonded to the substrate 700.

  As the semiconductor light emitting element 300, a light-transmitting inorganic substrate 310 using sapphire having a size of 600 μm × 600 μm × thickness 120 μm, an InGaN semiconductor layer 320 stacked on the top surface of the light-transmitting inorganic substrate 310, and a light-transmitting inorganic substrate A titanium layer (underlayer) 350 formed by sputtering on the lower surface of 310 with a thickness of 0.03 μm; and a silver layer 340 formed by sputtering on the lower surface of titanium layer 350 with a thickness of 2 μm at a sputtering rate of 296.1 Å / min; Was used. As the substrate 700, a glass substrate 710 having a size of 25 mm × 10 mm × thickness 1 mm, a titanium layer (adhesion layer) 720 formed by sputtering on the upper surface of the glass substrate 710 with a thickness of 0.1 μm, and a thickness of 0. A platinum layer (barrier layer) 730 formed by sputtering at 2 μm, a gold layer (underlayer) 740 formed by sputtering at a thickness of 0.2 μm on the upper surface of the platinum layer 730, and a thickness of 2 μm on the upper surface of the gold layer 740 A silver layer 750 formed by electrolytic plating was used.

An organic solvent 2-ethyl-1,3-hexanediol was applied on the silver layer 750 of the substrate 700, and placed thereon so that the silver layer 340 of the semiconductor light emitting device 300 was in direct contact therewith. After mounting the semiconductor light emitting device 300, the base body 700 was heated and bonded at about 200 ° C. for about 2 hours in an air atmosphere. As a result, the semiconductor light emitting device 200 could be directly bonded to the substrate 700.

<Measurement results>
For the semiconductor devices according to Examples 1 to 8, 12, and 13, the die shear strength was measured. The die shear strength was measured by applying a shearing force in the direction of peeling the semiconductor light emitting element 100 or 300 from the substrate 500 or 700 at room temperature, and measuring the peel strength. Further, the crystal orientation of the silver layer 530 or 750 of the substrate 500 or 700 according to Examples 1 to 8, 12, and 13 was analyzed using XRD, respectively. Table 1 shows the measurement result of die shear strength (MPa) and the peak strength or peak strength ratio of each crystal orientation by XRD analysis. Further, the semiconductor devices according to Examples 9 to 11 were heated in an air atmosphere at 300 ° C. to 440 ° C. for about 2 hours, and the die shear strength maintenance ratio before and after heating was measured. Table 2 shows the measurement results of the die shear strength maintenance rate. Moreover, the X-ray-crystal-diffraction figure of the silver layer in the semiconductor light-emitting device obtained in Example 4, 5 and 6 is shown in FIG. 4A is an X-ray crystal diffraction diagram of a silver layer in the semiconductor light emitting device obtained in Example 4, FIG. 4B is Example 5, and FIG. 4C is Example 6. FIG. 5 shows a cross-sectional SEM reflected electron image of the semiconductor light emitting device obtained in Example 10 in the mounted state.

  As shown in Table 1, it was confirmed that the bonding strength was improved as the thickness of the first silver layer was increased (Examples 7 and 8). Further, as shown in Table 1, it was confirmed that the higher the sputtering rate of the silver layer, the better the bonding strength (Examples 1, 2 and 3). Further, as shown in Table 1, it was confirmed that the higher the peak intensity of the (200) plane / (111) plane of the silver layer, the higher the bonding strength.

  Further, as shown in Table 1, when titanium is used as the first underlayer, the bonding strength is the strongest, when platinum is used, the bonding strength is next strong, and when gold is used, the bonding strength is next. It was confirmed that it was strong.

  Further, as shown in Table 1, it was confirmed that the bonding strength was further improved when the first silver layer was formed by sputtering (Example 12) and when it was formed by plating (Example 13). .

  As shown in Table 2, it was confirmed that the semiconductor device in which the barrier layer was disposed (Examples 10 and 11) improved in heat resistance than the semiconductor device in which the barrier layer was not disposed (Example 9). .

  As shown in FIG. 4, when titanium is used as the first underlayer, (200) peak intensity is the strongest, when platinum is used, next, (200) peak intensity is strong, and gold is used, then (200) It was confirmed that the peak intensity was strong. Further, when titanium is used as the first underlayer, (200) peak intensity / (111) peak intensity is the strongest, and when platinum is used, (200) peak intensity / (111) peak intensity is next strong, Next, it was confirmed that (200) peak intensity / (111) peak intensity was strong.

  As shown in FIG. 5, it was confirmed that the semiconductor device of the present invention had at least one abnormally grown grain of silver at the interface between the first silver layer and the second silver layer.

  The method for manufacturing a semiconductor device of the present invention includes, for example, manufacturing applications such as connection of component electrodes, die attach, fine bumps, flat panels, solar wiring, and wafer connection, and electronic components manufactured by combining them. Applicable to. Moreover, the manufacturing method of the semiconductor device of this invention is applicable also when manufacturing a semiconductor device using semiconductor light emitting elements, such as LED and LD, for example.

100, 200, 300 Semiconductor light emitting devices 110, 210, 310 Translucent inorganic substrates 120, 220, 320 Semiconductor layers 121, 221 and 321 N-type semiconductor layers 122, 222, 322 P-type semiconductor layers 130, 230, 330 Electrode 131 231, 331 n-type electrode 132, 232, 332 p-type electrode 140, 240, 340 Silver layer 150, 250, 350 Underlayer 160 Reflective layer 260, 360 Barrier layer 370 Adhesion layer 500, 600, 700 Base 510, 610, 710 Substrate 520, 630, 740 Underlayer 620, 730 Barrier layer 530, 640, 750 Silver layer 720 Adhesion layer

Claims (17)

Independently, a first underlayer having at least one metal selected from the group consisting of titanium, platinum, gold and ruthenium is formed on the surface of the substrate, and a first silver layer is formed on the first underlayer Forming on the surface of
Independently, a second underlayer having at least one metal selected from the group consisting of titanium, platinum, gold and ruthenium is formed on the surface of the semiconductor element, and a second silver layer is formed under the second lower layer. Forming on the surface of the formation;
Arranging the first silver layer and the second silver layer in contact with each other;
Adding a temperature of 150 ° C. to 900 ° C. to the substrate and the semiconductor element, and bonding the first silver layer and the second silver layer ,
Before forming the second underlayer on the surface of the semiconductor element,
A method for manufacturing a semiconductor device, further comprising a second barrier layer between the second underlayer and the semiconductor element . Independently, a first underlayer having at least one metal selected from the group consisting of titanium, platinum, gold and ruthenium is formed on the surface of the substrate, and a first silver layer is formed on the first underlayer Forming on the surface of
  Independently, a second underlayer having at least one metal selected from the group consisting of titanium, platinum, gold and ruthenium is formed on the surface of the semiconductor element, and a second silver layer is formed under the second lower layer. Forming on the surface of the formation;
  Arranging the first silver layer and the second silver layer in contact with each other;
  Adding a temperature of 150 ° C. to 900 ° C. to the substrate and the semiconductor element, and bonding the first silver layer and the second silver layer,
  At least one of the first silver layer and the second silver layer is a silver layer having a peak intensity of (2 0 0) plane / a peak intensity of (1 1 1) plane of 0.0013 or more. A method of manufacturing a semiconductor device using Before forming the second underlayer on the surface of the semiconductor element,
The method for manufacturing a semiconductor device according to claim 2 , further comprising a second barrier layer disposed between the second base layer and the semiconductor element. Before forming the first underlayer on the surface of the substrate,
The method for manufacturing a semiconductor device according to claim 1 , further comprising a first barrier layer disposed between the first base layer and the base body. The semiconductor device according to claim 4 , wherein the first barrier layer is formed of at least one metal selected from the group consisting of platinum, ruthenium, palladium, gold, tungsten, and molybdenum, or an oxide thereof. Method. Before placing the first barrier layer between the first underlayer and the substrate,
6. The method for manufacturing a semiconductor device according to claim 4 , wherein a first adhesion layer is further disposed between the first barrier layer and the substrate. Said second barrier layer, platinum, ruthenium, palladium, gold, tungsten, any of claims 1 and 3-6 is formed from at least one metal or oxide thereof is selected from the group consisting of molybdenum A method for manufacturing a semiconductor device according to one item . Before disposing the second barrier layer between the second underlayer and the semiconductor element,
The method for manufacturing a semiconductor device according to claim 1 , further comprising a second adhesion layer disposed between the second barrier layer and the semiconductor element. The method for manufacturing a semiconductor device according to claim 1 , wherein the semiconductor element is a semiconductor light emitting element. The method for manufacturing a semiconductor device according to claim 1 , wherein the bonding step is performed in air or an oxygen atmosphere. Prior to the step of placing the first silver layer and the second silver layer in contact with each other,
The method of any one of claims 1 to 10 , further comprising a step of applying an organic solvent or water to at least one of the surface of the first silver layer and the surface of the second silver layer. A method for manufacturing a semiconductor device. Wherein the organic solvent is 2-ethyl-1,3-hexanediol, glycerol, ethylene glycol, diethylene glycol, diethylene glycol monobutyl ether, claim 11 is at least one selected from the group consisting of diethylene glycol monoethyl ether and triethylene glycol The manufacturing method of the semiconductor device as described in any one of Claims 1-3.   13. The semiconductor device according to claim 1, wherein at least one of a thickness of the first silver layer and a thickness of the second silver layer is 0.5 to 10 μm. Production method.   14. The semiconductor device according to claim 1, wherein at least one of the thickness of the first base layer and the thickness of the second base layer is 0.005 to 5 μm. Production method.   8. The method of manufacturing a semiconductor device according to claim 4, wherein at least one of the thickness of the first adhesion layer and the thickness of the second adhesion layer is 0.005 to 5 μm. .   At least one of the first silver layer and the second silver layer is formed by sputtering, the film formation rate by sputtering of the first silver layer, and the film formation by sputtering of the second silver layer. The method for manufacturing a semiconductor device according to claim 1, wherein at least one of the speeds is 20 to 400 Å / sec. The method for manufacturing a semiconductor device according to claim 1, wherein at least one abnormally grown grain of silver is formed at an interface between the first silver layer and the second silver layer.