JP2018088498A - Anisotropic Conductive Adhesive - Google Patents
Anisotropic Conductive Adhesive Download PDFInfo
- Publication number
- JP2018088498A JP2018088498A JP2016231826A JP2016231826A JP2018088498A JP 2018088498 A JP2018088498 A JP 2018088498A JP 2016231826 A JP2016231826 A JP 2016231826A JP 2016231826 A JP2016231826 A JP 2016231826A JP 2018088498 A JP2018088498 A JP 2018088498A
- Authority
- JP
- Japan
- Prior art keywords
- anisotropic conductive
- conductive adhesive
- particles
- light
- inorganic binder
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000853 adhesive Substances 0.000 title claims abstract description 67
- 230000001070 adhesive effect Effects 0.000 title claims abstract description 67
- 239000002245 particle Substances 0.000 claims abstract description 71
- 239000000758 substrate Substances 0.000 claims abstract description 30
- 239000011230 binding agent Substances 0.000 claims abstract description 20
- 239000011347 resin Substances 0.000 claims description 27
- 229920005989 resin Polymers 0.000 claims description 27
- 229910000679 solder Inorganic materials 0.000 claims description 22
- NTHWMYGWWRZVTN-UHFFFAOYSA-N sodium silicate Chemical compound [Na+].[Na+].[O-][Si]([O-])=O NTHWMYGWWRZVTN-UHFFFAOYSA-N 0.000 claims description 16
- 239000004115 Sodium Silicate Substances 0.000 claims description 9
- 229910052911 sodium silicate Inorganic materials 0.000 claims description 9
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 8
- 238000000034 method Methods 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 6
- 238000002156 mixing Methods 0.000 claims description 6
- 229910052910 alkali metal silicate Inorganic materials 0.000 claims description 4
- 239000011734 sodium Substances 0.000 claims description 4
- 239000010954 inorganic particle Substances 0.000 claims description 3
- 239000002923 metal particle Substances 0.000 claims description 3
- 229910052700 potassium Inorganic materials 0.000 claims description 3
- 229910052708 sodium Inorganic materials 0.000 claims description 3
- 229910052744 lithium Inorganic materials 0.000 claims description 2
- 229910010272 inorganic material Inorganic materials 0.000 abstract description 7
- 239000011147 inorganic material Substances 0.000 abstract description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 11
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 7
- 239000000919 ceramic Substances 0.000 description 7
- 238000002844 melting Methods 0.000 description 7
- 230000008018 melting Effects 0.000 description 7
- 235000019353 potassium silicate Nutrition 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 6
- 239000002585 base Substances 0.000 description 5
- 229910052759 nickel Inorganic materials 0.000 description 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 239000003795 chemical substances by application Substances 0.000 description 4
- 239000003822 epoxy resin Substances 0.000 description 4
- 239000011256 inorganic filler Substances 0.000 description 4
- 229910003475 inorganic filler Inorganic materials 0.000 description 4
- 229920000647 polyepoxide Polymers 0.000 description 4
- 239000011787 zinc oxide Substances 0.000 description 4
- 229960001296 zinc oxide Drugs 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 150000001412 amines Chemical class 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 239000007771 core particle Substances 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- MYRTYDVEIRVNKP-UHFFFAOYSA-N 1,2-Divinylbenzene Chemical compound C=CC1=CC=CC=C1C=C MYRTYDVEIRVNKP-UHFFFAOYSA-N 0.000 description 2
- 229910002012 Aerosil® Inorganic materials 0.000 description 2
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 229910020935 Sn-Sb Inorganic materials 0.000 description 2
- 229910008757 Sn—Sb Inorganic materials 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052791 calcium Inorganic materials 0.000 description 2
- 239000011575 calcium Substances 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 238000005253 cladding Methods 0.000 description 2
- 229910017052 cobalt Inorganic materials 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- -1 for example Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 150000004679 hydroxides Chemical class 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 239000011133 lead Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 235000021317 phosphate Nutrition 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- 239000011135 tin Substances 0.000 description 2
- GZVHEAJQGPRDLQ-UHFFFAOYSA-N 6-phenyl-1,3,5-triazine-2,4-diamine Chemical compound NC1=NC(N)=NC(C=2C=CC=CC=2)=N1 GZVHEAJQGPRDLQ-UHFFFAOYSA-N 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- NLHHRLWOUZZQLW-UHFFFAOYSA-N Acrylonitrile Chemical compound C=CC#N NLHHRLWOUZZQLW-UHFFFAOYSA-N 0.000 description 1
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910016338 Bi—Sn Inorganic materials 0.000 description 1
- 229910019142 PO4 Inorganic materials 0.000 description 1
- 229910020816 Sn Pb Inorganic materials 0.000 description 1
- 229910020836 Sn-Ag Inorganic materials 0.000 description 1
- 229910020888 Sn-Cu Inorganic materials 0.000 description 1
- 229910020922 Sn-Pb Inorganic materials 0.000 description 1
- 229910020988 Sn—Ag Inorganic materials 0.000 description 1
- 229910019204 Sn—Cu Inorganic materials 0.000 description 1
- 229910018956 Sn—In Inorganic materials 0.000 description 1
- 229910008783 Sn—Pb Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910000318 alkali metal phosphate Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- 229910000019 calcium carbonate Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000002788 crimping Methods 0.000 description 1
- 230000001351 cycling effect Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 229920006332 epoxy adhesive Polymers 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 description 1
- 239000010452 phosphate Substances 0.000 description 1
- 150000003013 phosphoric acid derivatives Chemical class 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J1/00—Adhesives based on inorganic constituents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
- C09J11/02—Non-macromolecular additives
- C09J11/04—Non-macromolecular additives inorganic
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J9/00—Adhesives characterised by their physical nature or the effects produced, e.g. glue sticks
- C09J9/02—Electrically-conducting adhesives
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/20—Conductive material dispersed in non-conductive organic material
- H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B13/00—Apparatus or processes specially adapted for manufacturing conductors or cables
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
- H01B5/14—Non-insulated conductors or conductive bodies characterised by their form comprising conductive layers or films on insulating-supports
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
- H01B5/16—Non-insulated conductors or conductive bodies characterised by their form comprising conductive material in insulating or poorly conductive material, e.g. conductive rubber
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
- H01R11/00—Individual connecting elements providing two or more spaced connecting locations for conductive members which are, or may be, thereby interconnected, e.g. end pieces for wires or cables supported by the wire or cable and having means for facilitating electrical connection to some other wire, terminal, or conductive member, blocks of binding posts
- H01R11/01—Individual connecting elements providing two or more spaced connecting locations for conductive members which are, or may be, thereby interconnected, e.g. end pieces for wires or cables supported by the wire or cable and having means for facilitating electrical connection to some other wire, terminal, or conductive member, blocks of binding posts characterised by the form or arrangement of the conductive interconnection between the connecting locations
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Dispersion Chemistry (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Led Device Packages (AREA)
- Adhesives Or Adhesive Processes (AREA)
- Electric Connection Of Electric Components To Printed Circuits (AREA)
- Conductive Materials (AREA)
- Non-Insulated Conductors (AREA)
- Manufacturing Of Electric Cables (AREA)
Abstract
Description
本発明は、LED(Light Emitting Diode)を実装するための異方性導電接着剤に関する。 The present invention relates to an anisotropic conductive adhesive for mounting an LED (Light Emitting Diode).
従来、LEDのチップ部品を回路基板に実装する手法として、ワイヤーボンド接合が知られている。しかしながら、ワイヤーボンド接合は、ワイヤーが切断し、電気的接続不良が発生する場合がある。また、ワイヤーボンド接合は、基板の汎用性が低く、小型化やフレキシブル化が困難である。 Conventionally, wire bonding is known as a method of mounting LED chip components on a circuit board. However, in the wire bond bonding, the wire is cut and an electrical connection failure may occur. Moreover, the wire bond bonding has low versatility of the substrate, and it is difficult to reduce the size and flexibility.
ワイヤーボンド接合の課題を解決する手法として、特許文献1、2には、エポキシ系接着剤に導電粒子を分散させ、フィルム状に成形した異方性導電フィルムを使用し、LEDをフリップチップ実装する方法が提案されている。 As a technique for solving the problem of wire bond bonding, Patent Documents 1 and 2 disclose that an anisotropic conductive film in which conductive particles are dispersed in an epoxy adhesive and formed into a film is used, and an LED is flip-chip mounted. A method has been proposed.
フリップチップ実装用の従来の異方性導電接着剤は、LEDの照度を高めるために大電流を流した場合、大電流の熱により接着強度が低下し、LEDが剥離することがあった。また、従来の異方性導電接着剤を用いて紫外線LEDを実装した場合、青色LEDの2〜3倍の強さの光エネルギーにより接着強度が低下し、LEDが不点灯となることがあった。 In the conventional anisotropic conductive adhesive for flip chip mounting, when a large current is applied to increase the illuminance of the LED, the adhesive strength decreases due to the heat of the large current, and the LED may be peeled off. In addition, when an ultraviolet LED is mounted using a conventional anisotropic conductive adhesive, the adhesive strength decreases due to light energy twice to three times as strong as that of a blue LED, and the LED may not light up. .
本発明は、上述した従来技術における課題を解決するものであり、優れた耐熱性及び耐光エネルギー性を有する異方性導電接着剤を提供する。 The present invention solves the above-described problems in the prior art, and provides an anisotropic conductive adhesive having excellent heat resistance and light energy resistance.
本発明者らは、鋭意検討を行った結果、異方性導電接着剤の接着剤成分(バインダー)を無機材料とすることにより、優れた耐熱性及び耐光エネルギー性が得られることを見出した。 As a result of intensive studies, the present inventors have found that excellent heat resistance and light energy resistance can be obtained by using an adhesive component (binder) of an anisotropic conductive adhesive as an inorganic material.
すなわち、本発明に係る異方性導電接着剤は、基板の配線パターンの電極上に発光素子を接続させる異方性導電接着剤であって、無機バインダーと、導電粒子とを含有することを特徴とする。 That is, the anisotropic conductive adhesive according to the present invention is an anisotropic conductive adhesive for connecting a light emitting element on an electrode of a wiring pattern of a substrate, and contains an inorganic binder and conductive particles. And
また、本発明に係る発光装置は、配線パターンを有する基板と、前記配線パターンの電極上に形成された異方性導電膜と、前記異方性導電膜上に実装された発光素子とを備え、前記異方性導電膜が、無機バインダーと、導電粒子とを含有する異方性導電接着剤の硬化物であることを特徴とする。 The light emitting device according to the present invention includes a substrate having a wiring pattern, an anisotropic conductive film formed on an electrode of the wiring pattern, and a light emitting element mounted on the anisotropic conductive film. The anisotropic conductive film is a cured product of an anisotropic conductive adhesive containing an inorganic binder and conductive particles.
また、本発明に係る発光装置の製造方法は、基板の配線パターンの電極上に、無機バインダーと、導電粒子とを含有する異方性導電接着剤を塗布し、前記異方性導電接着剤を介して発光素子を加熱圧着させることを特徴とする。 In the method for manufacturing a light emitting device according to the present invention, an anisotropic conductive adhesive containing an inorganic binder and conductive particles is applied on an electrode of a wiring pattern of a substrate, and the anisotropic conductive adhesive is applied. The light-emitting element is heat-pressed through.
本発明によれば、接着剤成分が無機材料であるため、優れた耐熱性及び耐光エネルギー性を得ることができる。 According to the present invention, since the adhesive component is an inorganic material, excellent heat resistance and light energy resistance can be obtained.
以下、本発明の実施の形態について、図面を参照しながら下記順序にて詳細に説明する。
1.異方性導電接着剤
2.発光装置
3.実施例
Hereinafter, embodiments of the present invention will be described in detail in the following order with reference to the drawings.
1. 1. Anisotropic conductive adhesive 2. Light emitting device Example
<1.異方性導電接着剤>
本実施の形態に係る異方性導電接着剤は、基板の配線パターンの電極上に発光素子を接続させる異方性導電接着剤であって、無機バインダーと、導電粒子とを含有する。接着剤成分が無機材料であることにより、優れた耐熱性及び耐光エネルギー性を得ることができる。
<1. Anisotropic conductive adhesive>
The anisotropic conductive adhesive according to the present embodiment is an anisotropic conductive adhesive for connecting a light emitting element on an electrode of a wiring pattern on a substrate, and contains an inorganic binder and conductive particles. When the adhesive component is an inorganic material, excellent heat resistance and light energy resistance can be obtained.
[無機バインダー]
無機バインダーの主成分としては、アルカリ金属ケイ酸塩、リン酸塩、及びシリカゾルからなる群から選ばれる少なくとも1種であることが好ましく、中でも、分子式M2O・nSiO2(MはNa、K、Liのいずれか1種であり、nはモル比である。)で表されるアルカリ金属ケイ酸塩を用いることが好ましい。
[Inorganic binder]
The main component of the inorganic binder is preferably at least one selected from the group consisting of alkali metal silicates, phosphates, and silica sols. Among these, molecular formula M 2 O · nSiO 2 (M is Na, K , Li and n is a molar ratio.) It is preferable to use an alkali metal silicate represented by the following formula.
アルカリ金属ケイ酸塩の金属Mは、一般にNa>K>Liの順で接着性が良好である。このため、無機バインダーの主成分は、ケイ酸ナトリウム(水ガラス)であることが好ましい。ケイ酸ナトリウムとしては、JIS K1408に準拠するケイ酸ナトリウム1号〜3号を用いることが好ましく、中でも、接着力の観点からケイ酸ナトリウム3号を用いることが好ましい。 The metal M of the alkali metal silicate generally has good adhesion in the order of Na> K> Li. For this reason, it is preferable that the main component of an inorganic binder is sodium silicate (water glass). As sodium silicate, sodium silicate Nos. 1 to 3 in accordance with JIS K1408 are preferably used, and sodium silicate No. 3 is preferably used from the viewpoint of adhesive strength.
また、無機バインダーは、接着力を向上させるため、硬化剤として、Zn、Mg、Cのいずれか1種の酸化物、水酸化物、Na、K、Caのいずれか1種のケイ化物、ケイフッ化物、Al、Znのいずれか1種のリン酸塩、Ca、Ba、Mgのいずれか1種のホウ酸塩を含有してもよい。 In addition, in order to improve the adhesive force, the inorganic binder is used as a curing agent such as any one of oxides, hydroxides, hydroxides, Na, K, and Ca of any one of Zn, Mg, and C. Any one kind of phosphate, Ca, Ba, Mg may be contained.
[導電粒子]
導電粒子としては、半田粒子、金属粒子、及び樹脂粒子に金属が被覆された樹脂コア導電粒子からなる群から選ばれる少なくとも1種であるであることが好ましい。中でも、半田粒子を用いることが好ましく、半田粒子と樹脂コア粒子とを併用することが好ましい。
[Conductive particles]
The conductive particles are preferably at least one selected from the group consisting of solder particles, metal particles, and resin core conductive particles in which resin particles are coated with metal. Among these, it is preferable to use solder particles, and it is preferable to use solder particles and resin core particles in combination.
導電粒子の平均粒径は、1μm以上30μm以下であることが好ましく、より好ましくは5μm以上25μm以下である。導電粒子の配合量は、無機バインダー100質量部に対して3〜120質量部であることが好ましく、10〜80質量部であることがより好ましい。 The average particle diameter of the conductive particles is preferably 1 μm or more and 30 μm or less, and more preferably 5 μm or more and 25 μm or less. The blending amount of the conductive particles is preferably 3 to 120 parts by mass and more preferably 10 to 80 parts by mass with respect to 100 parts by mass of the inorganic binder.
半田粒子としては、例えばJIS Z 3282−1999に規定されている、Sn−Pb系、Pb−Sn−Sb系、Sn−Sb系、Sn−Pb−Bi系、Bi−Sn系、Sn−Cu系、Sn−Pb−Cu系、Sn−In系、Sn−Ag系、Sn−Pb−Ag系、Pb−Ag系などから、電極材料や接続条件などに応じて適宜選択して用いることができる。また、半田粒子の形状は、粒状、燐片状などから適宜選択することができる。また、半田粒子は、異方性を向上させるために絶縁層で被覆されていても構わない。また、半田の融点は、100〜250℃であることが好ましく、150〜200℃であることがより好ましい。なお、半田粒子は、圧着時の十分な荷重により、半田粒子の融点以下の実装温度でも端子(電極)との間で合金を形成することができる。 Examples of the solder particles include Sn-Pb, Pb-Sn-Sb, Sn-Sb, Sn-Pb-Bi, Bi-Sn, and Sn-Cu based on JIS Z 3282-1999. , Sn—Pb—Cu, Sn—In, Sn—Ag, Sn—Pb—Ag, Pb—Ag, and the like can be appropriately selected according to the electrode material, connection conditions, and the like. Further, the shape of the solder particles can be appropriately selected from granular, flake shaped, and the like. The solder particles may be covered with an insulating layer in order to improve anisotropy. Moreover, it is preferable that melting | fusing point of solder is 100-250 degreeC, and it is more preferable that it is 150-200 degreeC. Note that the solder particles can form an alloy with the terminals (electrodes) even at a mounting temperature lower than the melting point of the solder particles by a sufficient load at the time of pressure bonding.
半田粒子の配合量は、20〜120質量部であることが好ましい。はんだ粒子の配合量が少なすぎると優れた放熱特性が得られなくなり、配合量が多すぎると異方性が損なわれ、優れた接続信頼性が得られない。 The blending amount of the solder particles is preferably 20 to 120 parts by mass. If the blending amount of the solder particles is too small, excellent heat dissipation characteristics cannot be obtained, and if the blending amount is too large, anisotropy is impaired and excellent connection reliability cannot be obtained.
半田粒子と樹脂コア導電粒子とを併用する場合、半田粒子は、樹脂コア導電粒子よりも平均粒径が大きいことが好ましく、半田粒子の平均粒径は、樹脂コア導電粒子の平均粒径の120〜800%であることが好ましく、200〜500%であることがより好ましい。半田粒子の平均粒径が樹脂コア導電粒子よりも大きいことにより、圧着時に半田粒子に十分に荷重が加わり、半田粒子の融点以下の実装温度でも端子(電極)との間で合金を形成することができる。 When the solder particles and the resin core conductive particles are used in combination, the solder particles preferably have an average particle size larger than that of the resin core conductive particles, and the average particle size of the solder particles is 120, which is the average particle size of the resin core conductive particles. It is preferable that it is -800%, and it is more preferable that it is 200-500%. Because the average particle size of the solder particles is larger than that of the resin core conductive particles, a sufficient load is applied to the solder particles during crimping, and an alloy is formed between the terminals (electrodes) even at a mounting temperature below the melting point of the solder particles. Can do.
金属粒子としては、例えば、ニッケル、鉄、銅、アルミニウム、錫、鉛、クロム、コバルト、銀、金などの各種金属又はこれらの合金を用いることができる。 As the metal particles, for example, various metals such as nickel, iron, copper, aluminum, tin, lead, chromium, cobalt, silver, gold, or alloys thereof can be used.
樹脂コア導電粒子の樹脂粒子としては、例えば、エポキシ樹脂、フェノール樹脂、アクリル樹脂、アクリロニトリル・スチレン(AS)樹脂、ベンゾグアナミン樹脂、ジビニルベンゼン系樹脂、スチレン系樹脂などを用いることができる。また、樹脂粒子を被覆する金属としては、例えば、ニッケル、鉄、銅、アルミニウム、錫、鉛、クロム、コバルト、銀、金などの各種金属又はこれらの合金を用いることができる。 As the resin particles of the resin core conductive particles, for example, epoxy resin, phenol resin, acrylic resin, acrylonitrile / styrene (AS) resin, benzoguanamine resin, divinylbenzene resin, styrene resin, and the like can be used. Moreover, as a metal which coat | covers a resin particle, various metals, such as nickel, iron, copper, aluminum, tin, lead, chromium, cobalt, silver, gold | metal | money, or these alloys can be used, for example.
また、本実施の形態に係る異方性導電接着剤は、粘度や線膨張を調整するため、無機フィラーをさらに含有してもよい。無機フィラーとしては、例えば、シリカ、アルミナ、酸化チタン、窒化アルミニウム、炭酸カルシウム、酸化マグネシウムなどが挙げられる。無機フィラーの平均粒径は、10nm〜10μmであることが好ましく、無機フィラーの配合量は、無機バインダー100質量部に対して1〜100質量部であることが好ましい。 Moreover, the anisotropic conductive adhesive according to the present embodiment may further contain an inorganic filler in order to adjust viscosity and linear expansion. Examples of the inorganic filler include silica, alumina, titanium oxide, aluminum nitride, calcium carbonate, and magnesium oxide. The average particle size of the inorganic filler is preferably 10 nm to 10 μm, and the blending amount of the inorganic filler is preferably 1 to 100 parts by mass with respect to 100 parts by mass of the inorganic binder.
また、異方性導電接着剤は、LEDからの出射光を反射し、高い光取り出し効率を得るため、TiO2、BN、ZnO、Al2O3などの白色無機粒子を含有してもよい。白色無機粒子の平均粒径は、反射させる光の波長の1/2以上であることが好ましい。 In addition, the anisotropic conductive adhesive may contain white inorganic particles such as TiO 2 , BN, ZnO, and Al 2 O 3 in order to reflect light emitted from the LED and obtain high light extraction efficiency. The average particle size of the white inorganic particles is preferably at least 1/2 of the wavelength of light to be reflected.
このような異方性導電接着剤によれば、接着剤成分が無機材料であることにより、優れた耐熱性及び耐光エネルギー性を得ることができる。特に、青色LEDの2〜3倍の強さの光エネルギーの紫外線を発光する紫外線LEDを実装した場合でも、優れた耐熱性及び耐光エネルギー性を得ることができる。 According to such an anisotropic conductive adhesive, excellent heat resistance and light energy resistance can be obtained because the adhesive component is an inorganic material. In particular, even when an ultraviolet LED that emits ultraviolet light having a light energy 2 to 3 times that of a blue LED is mounted, excellent heat resistance and light energy resistance can be obtained.
<2.発光装置>
本実施の形態に係る発光装置は、配線パターンを有する基板と、配線パターンの電極上に形成された異方性導電膜と、異方性導電膜上に実装された発光素子とを備え、異方性導電膜が、前述した無機バインダーと、導電粒子とを含有する異方性導電接着剤の硬化物である。これにより、優れた耐熱性及び耐光エネルギー性を得ることができる。
<2. Light emitting device>
The light emitting device according to the present embodiment includes a substrate having a wiring pattern, an anisotropic conductive film formed on an electrode of the wiring pattern, and a light emitting element mounted on the anisotropic conductive film. The anisotropic conductive film is a cured product of the anisotropic conductive adhesive containing the above-described inorganic binder and conductive particles. Thereby, the outstanding heat resistance and light energy resistance can be obtained.
また、本実施の形態に係る発光装置の製造方法は、基板の配線パターンの電極上に、無機バインダーと、導電粒子とを含有する異方性導電接着剤を塗布し、異方性導電接着剤を介して発光素子を加熱圧着させるものである。 Further, in the method for manufacturing the light emitting device according to the present embodiment, an anisotropic conductive adhesive containing an inorganic binder and conductive particles is applied on the electrodes of the wiring pattern of the substrate, and the anisotropic conductive adhesive is applied. The light emitting element is thermocompression-bonded via the substrate.
図1は、発光装置の一例を示す断面図である。発光素子は、例えばn−GaNからなる第1導電型クラッド層11と、例えばInxAlyGa1−x−yN層からなる活性層12と、例えばp−GaNからなる第2導電型クラッド層113とを備え、いわゆるダブルヘテロ構造を有する。また、パッシベーション層14により第1導電型クラッド層11の一部に形成された第1導電型電極11aと、第2導電型クラッド層13の一部に形成された第2導電型電極13aとを備える。第1導電型電極11aと第2導電型電極13aとの間に電圧が印加されると、活性層12にキャリアが集中し、再結合することにより発光が生じる。
FIG. 1 is a cross-sectional view illustrating an example of a light emitting device. The light emitting element includes a first conductivity type clad
発光素子は、特に限定されず、発光波長が200〜300nm程度の紫外線を発光する紫外線LEDであっても、発光波長が460nm程度の青色光を発光する青色LEDであってもよい。光エネルギー式(E=hc/λ)による計算によれば、青色LEDの光エネルギーは2.8eVであり、紫外線LEDの光エネルギーは4.1〜6.2eVであり、紫外線LEDは、青色LEDの2〜3倍の強さの光エネルギーを有することになるが、本実施の形態では、異方性導電接着剤の接着剤成分が無機材料であるため、紫外線LEDを用いた場合でも接着強度の低下を抑制し、優れた耐熱性及び耐光エネルギー性を得ることができる。 The light emitting element is not particularly limited, and may be an ultraviolet LED that emits ultraviolet light having an emission wavelength of about 200 to 300 nm or a blue LED that emits blue light having an emission wavelength of about 460 nm. According to the calculation by the light energy formula (E = hc / λ), the light energy of the blue LED is 2.8 eV, the light energy of the ultraviolet LED is 4.1 to 6.2 eV, and the ultraviolet LED is a blue LED. However, in this embodiment, since the adhesive component of the anisotropic conductive adhesive is an inorganic material, the adhesive strength can be obtained even when an ultraviolet LED is used. Can be suppressed, and excellent heat resistance and light energy resistance can be obtained.
基板は、基材21上に第1導電型用回路パターン22と、第2導電型用回路パターン23とを備え、発光素子の第1導電型電極11a及び第2導電型電極13aに対応する位置にそれぞれ電極を有する。
The substrate includes a first conductivity
基板は、透光基板であることが好ましい。基材21が透光基板である場合、基材31は、ガラス、PET(polyethylene terephthalate)などの透明基材であることが好ましく、第1導電型用回路パターン22、第2導電型用回路パターン23、及びその電極は、ITO(Indium-Tin-Oxide)、IZO(Indium-Zinc-Oxide)、ZnO(Zinc-Oxide)、IGZO(Indium-Gallium-Zinc-Oxide)などの透明導電膜であることが好ましい。基板が透光基板であることにより、基板側を表示面(発光面)とすることが可能となる。
The substrate is preferably a translucent substrate. When the
異方性導電膜30は、前述した異方性導電接着剤が硬化したものであり、発光素子の端子(電極11a、13a)と基板の端子(電極)との間に導電粒子31が捕捉されることにより、発光素子と基板とが電気的に接続される。
The anisotropic
このような発光装置によれば、異方性導電接着剤の接着剤成分が無機材料であることにより、優れた耐熱性及び耐光エネルギー性を得ることができる。特に、青色LEDの2〜3倍の強さの光エネルギーの紫外線を発光する紫外線LEDを実装した場合でも、優れた耐熱性及び耐光エネルギー性を得ることができる。
<3.実施例>
According to such a light emitting device, excellent heat resistance and light resistance can be obtained because the adhesive component of the anisotropic conductive adhesive is an inorganic material. In particular, even when an ultraviolet LED that emits ultraviolet light having a light energy 2 to 3 times that of a blue LED is mounted, excellent heat resistance and light energy resistance can be obtained.
<3. Example>
以下、本発明の実施例について説明する。本実施例では、各種の異方性導電接着剤を作製した。そして、異方性導電接着剤を用いて基板上に青色LEDチップを実装してLED実装サンプルAを作製し、初期及び高温高湿連続点灯試験後のダイシェア強度を測定して耐熱性を評価した。また、異方性導電接着剤を用いて基板上に紫外線LEDチップを実装してLED実装サンプルBを作製し、初期、TCT(Temperature Cycling Test)試験後及び高温高湿連続点灯試験後の順電圧を測定して耐熱性及び耐光エネルギー性について評価した。なお、本発明は、これらの実施例に限定されるものではない。 Examples of the present invention will be described below. In this example, various anisotropic conductive adhesives were produced. Then, a blue LED chip was mounted on the substrate using an anisotropic conductive adhesive to produce an LED mounting sample A, and the heat resistance was evaluated by measuring the die shear strength after the initial and high-temperature and high-humidity continuous lighting tests. . In addition, an ultraviolet LED chip is mounted on a substrate using an anisotropic conductive adhesive to prepare an LED mounting sample B, and forward voltage after initial, TCT (Temperature Cycling Test) test and after high temperature and high humidity continuous lighting test Were measured for heat resistance and light energy resistance. The present invention is not limited to these examples.
[LED実装サンプルの作製]
図2は、LED実装サンプルの作製工程を説明するための図である。図2に示すように、LED実装サンプルを作製した。金属配線が形成されたセラミック基板41をステージ上に配置し、セラミック基板41上に異方性導電接着剤40をスタンピング法にて塗布した。そして、異方性導電接着剤40上に、LEDチップ42を60gの加重で搭載し、加熱圧着ボンダー43を用いて、ヘッドとステージを加熱して加熱圧着実装し、LED実装サンプルA又はLED実装サンプルBを得た。
[Production of LED mounting sample]
FIG. 2 is a diagram for explaining a manufacturing process of the LED mounting sample. As shown in FIG. 2, an LED mounting sample was produced. A
[ダイシェア強度の測定]
LEDチップ42として青色LED(定格350mA、サイズ45mm角、波長460nm)を用いて、LED実装サンプルAを作製した。
[Die shear strength measurement]
An LED mounting sample A was produced using a blue LED (rated 350 mA, size 45 mm square, wavelength 460 nm) as the
図3は、ダイシェア強度試験の概要を示す断面図である。図3に示すように、ダイシェアテスターを用いて、ツール50のせん断速度20μm/sec、温度25℃の条件で各LED実装サンプルAの初期、及び高温高湿連続点灯試験後のダイシェア強度を測定した。高温高湿連続点灯試験は、温度85℃−湿度90%−500時間の条件で連続点灯させた。
FIG. 3 is a cross-sectional view showing an outline of the die shear strength test. As shown in FIG. 3, using a die shear tester, the die shear strength is measured at the initial stage of each LED mounting sample A and after the high temperature and high humidity continuous lighting test under the conditions of a shear rate of the
[順電圧の測定]
LEDチップ42として青色LED(ナイトライドセミコンダクター社、NS355C−2SAA、定格20mA、順電圧3.61V、波長355nm)を用いて、LED実装サンプルBを作製した。
[Measurement of forward voltage]
An LED mounting sample B was prepared using a blue LED (Nitride Semiconductor, NS355C-2SAA, rated 20 mA, forward voltage 3.61 V, wavelength 355 nm) as the
各LED実装サンプルBの初期、TCT試験後、及び高温高湿連続点灯試験後の順電圧を測定した。TCT試験は、LED実装サンプルBを、−40℃及び100℃の雰囲気に各30分間曝し、これを1サイクルとする冷熱サイクルを1000サイクル行った。高温高湿連続点灯試験は、温度85℃−湿度90%−1000時間、20mAの条件で連続点灯させた。LEDの初期の順電圧から0.1V以上変化したものをNGと評価した。 The forward voltage after each LED mounting sample B, after the TCT test, and after the high temperature and high humidity continuous lighting test was measured. In the TCT test, the LED mounting sample B was exposed to an atmosphere of −40 ° C. and 100 ° C. for 30 minutes each, and 1000 cycles of a cooling / heating cycle were performed. In the high-temperature and high-humidity continuous lighting test, the lighting was continuously performed under the conditions of a temperature of 85 ° C., a humidity of 90% and 1000 hours, and 20 mA. What changed 0.1V or more from the initial forward voltage of LED was evaluated as NG.
<実施例1>
表1に示すように、水ガラス(JIS K1408に示すケイ酸ナトリウム3号)100質量部、及び半田粒子(粒径10〜25μm、融点180℃、千住金属工業社製)60質量部を秤量して添加し、遊星攪拌機にて2000rpm/2minで攪拌して、異方性導電接着剤を作製した。この異方性導電接着剤を介してセラミック基板上にLEDチップを搭載し、ヘッドを150℃、ステージを50℃に加熱し、実装温度(到達トップ温度)100℃、60秒間の条件で加熱圧着実装し、LED実装サンプルA、Bを得た。表1に、LED実装サンプルAの初期及び高温高湿連続点灯試験後のダイシェア強度、並びにLED実装サンプルBの初期、TCT試験後及び高温高湿連続点灯試験後の順電圧の測定結果を示す。
<Example 1>
As shown in Table 1, 100 parts by mass of water glass (sodium silicate No. 3 shown in JIS K1408) and 60 parts by mass of solder particles (particle size 10 to 25 μm, melting point 180 ° C., manufactured by Senju Metal Industry Co., Ltd.) are weighed. And stirred with a planetary stirrer at 2000 rpm / 2 min to prepare an anisotropic conductive adhesive. An LED chip is mounted on a ceramic substrate through this anisotropic conductive adhesive, the head is heated to 150 ° C., the stage is heated to 50 ° C., and the thermocompression bonding is performed at a mounting temperature (attained top temperature) of 100 ° C. for 60 seconds. After mounting, LED mounting samples A and B were obtained. Table 1 shows the die shear strength after the initial stage of the LED mounting sample A and after the high temperature and high humidity continuous lighting test, and the measurement results of the forward voltage after the initial stage, after the TCT test and after the high temperature and high humidity continuous lighting test of the LED mounting sample B.
<実施例2>
表1に示すように、水ガラス(JIS K1408に示すケイ酸ナトリウム3号)100質量部、及び樹脂コア導電粒子(平均粒径5μm、ニッケルメッキ、樹脂コア粒子(日本化学社製EHコア))10質量部を秤量して添加し、遊星攪拌機にて2000rpm/2minで攪拌して、異方性導電接着剤を作製した。これ以外は、実施例1と同様に、LED実装サンプルA、Bを作製した。
<Example 2>
As shown in Table 1, 100 parts by mass of water glass (sodium silicate No. 3 shown in JIS K1408) and resin core conductive particles (average particle size 5 μm, nickel plating, resin core particles (EH Core manufactured by Nippon Kagaku Co., Ltd.)) 10 parts by mass was weighed and added, and stirred with a planetary stirrer at 2000 rpm / 2 min to produce an anisotropic conductive adhesive. Other than this, in the same manner as in Example 1, LED mounting samples A and B were produced.
<実施例3>
表1に示すように、水ガラス(JIS K1408に示すケイ酸ナトリウム3号)100質量部、半田粒子(粒径10〜25μm、融点180℃、千住金属工業社製)30質量部、及び樹脂コア導電粒子(平均粒径5μm、ニッケルメッキ、樹脂コア粒子(日本化学社製EHコア))5質量部を秤量して添加し、遊星攪拌機にて2000rpm/2minで攪拌して、異方性導電接着剤を作製した。これ以外は、実施例1と同様に、LED実装サンプルA、Bを作製した
<Example 3>
As shown in Table 1, 100 parts by mass of water glass (sodium silicate No. 3 shown in JIS K1408), 30 parts by mass of solder particles (particle size 10 to 25 μm, melting point 180 ° C., Senju Metal Industry Co., Ltd.), and resin core 5 parts by weight of conductive particles (average particle size 5 μm, nickel plating, resin core particles (EH core manufactured by Nippon Kagaku)) are weighed and added, and stirred with a planetary stirrer at 2000 rpm / 2 min, anisotropic conductive bonding An agent was prepared. Except this, LED mounting samples A and B were produced in the same manner as in Example 1.
<実施例4>
表1に示すように、水ガラス(JIS K1408に示すケイ酸ナトリウム3号)100質量部、半田粒子(粒径10〜25μm、融点180℃、千住金属工業社製)60質量部、及びシリカ粒子(日本アエロジル社製アエロジルRX300)7質量部を秤量して添加し、遊星攪拌機にて2000rpm/2minで攪拌して、異方性導電接着剤を作製した。これ以外は、実施例1と同様に、LED実装サンプルA、Bを作製した
<Example 4>
As shown in Table 1, 100 parts by mass of water glass (sodium silicate No. 3 shown in JIS K1408), 60 parts by mass of solder particles (particle size 10 to 25 μm, melting point 180 ° C., Senju Metal Industry Co., Ltd.), and silica particles (Aerosil RX300 manufactured by Nippon Aerosil Co., Ltd.) 7 parts by weight were weighed and added, and stirred with a planetary stirrer at 2000 rpm / 2 min to prepare an anisotropic conductive adhesive. Except this, LED mounting samples A and B were produced in the same manner as in Example 1.
<比較例1>
表1に示すように、異方性導電接着剤として、デクセリアルズ社製のアミン系硬化剤含有液状異方性導電接着剤(BPシリーズ、樹脂:エポキシ樹脂、粒子:Ni粒子)を使用した。この異方性導電接着剤を介してセラミック基板上にLEDチップを搭載し、ヘッドを200℃、ステージを50℃に加熱し、実装温度(到達トップ温度)150℃、30秒間の条件で加熱圧着実装し、LED実装サンプルA、Bを得た。
<Comparative Example 1>
As shown in Table 1, as the anisotropic conductive adhesive, an amine-based curing agent-containing liquid anisotropic conductive adhesive (BP series, resin: epoxy resin, particle: Ni particle) manufactured by Dexialials was used. An LED chip is mounted on a ceramic substrate via this anisotropic conductive adhesive, the head is heated to 200 ° C., the stage is heated to 50 ° C., and thermocompression bonding is performed at a mounting temperature (attained top temperature) of 150 ° C. for 30 seconds. After mounting, LED mounting samples A and B were obtained.
<比較例2>
表1に示すように、異方性導電接着剤として、デクセリアルズ社製のカチオン硬化ACF(樹脂:エポキシ樹脂、粒子:ニッケル被覆樹脂粒子、粒子径:3μm、厚み:6μm、樹脂密度:60Kpcs/mm2)を使用した。この異方性導電接着剤を介してセラミック基板上にLEDチップを搭載し、ヘッドを250℃、ステージを70℃に加熱し、実装温度(到達トップ温度)180℃、30秒間の条件で加熱圧着実装し、LED実装サンプルA、Bを得た。
<Comparative example 2>
As shown in Table 1, as an anisotropic conductive adhesive, a cation-cured ACF manufactured by Dexerials (resin: epoxy resin, particles: nickel-coated resin particles, particle size: 3 μm, thickness: 6 μm, resin density: 60 Kpcs / mm) 2 ) was used. An LED chip is mounted on a ceramic substrate through this anisotropic conductive adhesive, the head is heated to 250 ° C., the stage is heated to 70 ° C., and the thermocompression bonding is performed at a mounting temperature (attained top temperature) of 180 ° C. for 30 seconds. After mounting, LED mounting samples A and B were obtained.
<比較例3>
表1に示すように、シリコン樹脂(信越化学社製KER2500)100質量部、及び半田粒子(粒径10〜25μm、融点180℃、千住金属工業社製)60質量部を秤量して添加し、遊星攪拌機にて2000rpm/2minで攪拌して、異方性導電接着剤を作製した。この異方性導電接着剤を介してセラミック基板上にLEDチップを搭載し、ヘッドを290℃、ステージを60℃に加熱し、実装温度(到達トップ温度)200℃、60秒間の条件で加熱圧着実装し、LED実装サンプルA、Bを得た。
<Comparative Example 3>
As shown in Table 1, 100 parts by mass of silicon resin (KE 2500 manufactured by Shin-Etsu Chemical Co., Ltd.) and 60 parts by mass of solder particles (particle size 10 to 25 μm, melting point 180 ° C., Senju Metal Industry Co., Ltd.) were weighed and added. Stirring was performed at 2000 rpm / 2 min with a planetary stirrer to prepare an anisotropic conductive adhesive. An LED chip is mounted on a ceramic substrate via this anisotropic conductive adhesive, the head is heated to 290 ° C., the stage is heated to 60 ° C., and thermocompression bonding is performed at a mounting temperature (attained top temperature) of 200 ° C. for 60 seconds. After mounting, LED mounting samples A and B were obtained.
比較例1のようにアミン系硬化剤含有液状異方性導電接着剤を用いた場合、アミン硬化系−エポキシ樹脂の極性により吸水性が高いため、LED実装サンプルAは、高温高湿連続点灯試験においてダイシェア強度が低下し、LED実装サンプルBは、高温高湿連続点灯試験において順電圧が大きく変化した。 When an amine-based curing agent-containing liquid anisotropic conductive adhesive is used as in Comparative Example 1, since the water absorption is high due to the polarity of the amine curing system-epoxy resin, the LED mounting sample A is a high-temperature, high-humidity continuous lighting test. , The die shear strength decreased, and the forward voltage of the LED mounting sample B greatly changed in the high-temperature and high-humidity continuous lighting test.
また、比較例2のようにカチオン硬化ACFを用いた場合、LED実装サンプルAは、高温高湿連続点灯試験において青色LEDが剥がれてしまい、LED実装サンプルBは、TCT試験において300時間で不点灯となり、高温高湿連続点灯試験において130時間で不点灯となった。 In addition, when the cation-cured ACF is used as in Comparative Example 2, the blue LED peels off in the LED mounting sample A in the high temperature and high humidity continuous lighting test, and the LED mounting sample B does not light in 300 hours in the TCT test. Thus, in the high-temperature and high-humidity continuous lighting test, lighting was not performed in 130 hours.
また、比較例3のようにシリコン樹脂ACFを用いた場合、シリコン樹脂が柔らかいことから、LED実装サンプルAは、高いダイシェア強度が得られず、LED実装サンプルBは、TCT試験において200時間で不点灯となり、高温高湿連続点灯試験において200時間で不点灯となった。 Further, when the silicon resin ACF is used as in Comparative Example 3, since the silicon resin is soft, the LED mounting sample A cannot obtain a high die shear strength, and the LED mounting sample B does not reach 200 hours in the TCT test. It turned on, and it turned off in 200 hours in the high temperature and high humidity continuous lighting test.
一方、実施例1〜4のように水ガラスを含有する無機ACFを用いた場合、LED実装サンプルAは、高温高湿連続点灯試験においてもダイシェア強度が低下せず、LED実装サンプルBは、TCT試験、及び高温高湿連続点灯試験においても順電圧の変化が小さかった。すなわち、水ガラスを含有する無機ACFを用いることにより、優れた耐熱性及び耐光エネルギー性が得られることがわかった。 On the other hand, when the inorganic ACF containing water glass is used as in Examples 1 to 4, the LED mounting sample A does not decrease the die shear strength even in the high-temperature and high-humidity continuous lighting test, and the LED mounting sample B is TCT. The change in forward voltage was also small in the test and the high-temperature and high-humidity continuous lighting test. That is, it was found that excellent heat resistance and light energy resistance can be obtained by using inorganic ACF containing water glass.
11 第1導電型クラッド層、11a 第1導電型電極、12 活性層、13 第2導電型クラッド層、13a 第2導電型電極、14 パッシベーション層、21 基材、22 第1導電型用回路パターン、23 第2導電型用回路パターン、30 異方性導電膜、 31 導電性粒子、40 異方性導電接着剤、41 セラミック基板、42 LEDチップ、43 加熱圧着ボンダー、50 ツール
DESCRIPTION OF
Claims (9)
無機バインダーと、導電粒子とを含有する異方性導電接着剤。 An anisotropic conductive adhesive for connecting a light emitting element on an electrode of a wiring pattern on a substrate,
An anisotropic conductive adhesive containing an inorganic binder and conductive particles.
前記配線パターンの電極上に形成された異方性導電膜と、
前記異方性導電膜上に実装された発光素子とを備え、
前記異方性導電膜が、無機バインダーと、導電粒子とを含有する異方性導電接着剤の硬化物である発光装置。 A substrate having a wiring pattern;
An anisotropic conductive film formed on the electrode of the wiring pattern;
A light emitting device mounted on the anisotropic conductive film,
The light emitting device in which the anisotropic conductive film is a cured product of an anisotropic conductive adhesive containing an inorganic binder and conductive particles.
A method for manufacturing a light-emitting device, wherein an anisotropic conductive adhesive containing an inorganic binder and conductive particles is applied on an electrode of a wiring pattern on a substrate, and a light-emitting element is heated and pressure-bonded via the anisotropic conductive adhesive .
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016231826A JP2018088498A (en) | 2016-11-29 | 2016-11-29 | Anisotropic Conductive Adhesive |
PCT/JP2017/040440 WO2018101003A1 (en) | 2016-11-29 | 2017-11-09 | Anisotropic electrically-conductive adhesive agent |
CN201780072639.2A CN109997237A (en) | 2016-11-29 | 2017-11-09 | Anisotropically conducting adhesive |
TW106141316A TWI788313B (en) | 2016-11-29 | 2017-11-28 | Anisotropic conductive adhesive |
JP2021093104A JP7359804B2 (en) | 2016-11-29 | 2021-06-02 | Anisotropic conductive adhesive, light emitting device, and method for manufacturing the light emitting device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016231826A JP2018088498A (en) | 2016-11-29 | 2016-11-29 | Anisotropic Conductive Adhesive |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2021093104A Division JP7359804B2 (en) | 2016-11-29 | 2021-06-02 | Anisotropic conductive adhesive, light emitting device, and method for manufacturing the light emitting device |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2018088498A true JP2018088498A (en) | 2018-06-07 |
Family
ID=62242422
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016231826A Pending JP2018088498A (en) | 2016-11-29 | 2016-11-29 | Anisotropic Conductive Adhesive |
JP2021093104A Active JP7359804B2 (en) | 2016-11-29 | 2021-06-02 | Anisotropic conductive adhesive, light emitting device, and method for manufacturing the light emitting device |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2021093104A Active JP7359804B2 (en) | 2016-11-29 | 2021-06-02 | Anisotropic conductive adhesive, light emitting device, and method for manufacturing the light emitting device |
Country Status (4)
Country | Link |
---|---|
JP (2) | JP2018088498A (en) |
CN (1) | CN109997237A (en) |
TW (1) | TWI788313B (en) |
WO (1) | WO2018101003A1 (en) |
Citations (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11289098A (en) * | 1998-01-30 | 1999-10-19 | Patent Treuhand Ges Elektr Gluehlamp Mbh | Optoelectronic semiconductor device and illuminating lamp or lamp |
JP2003249689A (en) * | 2001-12-18 | 2003-09-05 | Nichia Chem Ind Ltd | Light emitting device |
JP2007273753A (en) * | 2006-03-31 | 2007-10-18 | Kyocera Corp | Light emitting device and light emitting module |
JP2009140975A (en) * | 2007-12-04 | 2009-06-25 | Panasonic Electric Works Co Ltd | Semiconductor light-emitting device and lighting device using it and manufacturing process of semiconductor light-emitting device |
JP2013168622A (en) * | 2011-03-28 | 2013-08-29 | Fujifilm Corp | Reflection substrate for light-emitting element and method for manufacturing the same |
JP2013536540A (en) * | 2010-06-09 | 2013-09-19 | 海洋王照明科技股▲ふん▼有限公司 | Conductive adhesive mixture, fluorescent screen anode plate and method for producing them |
JP2013195364A (en) * | 2012-03-22 | 2013-09-30 | Tatsuta Electric Wire & Cable Co Ltd | Liquid detection sensor |
JP2013243344A (en) * | 2012-04-23 | 2013-12-05 | Nichia Chem Ind Ltd | Light-emitting device |
JP2015090887A (en) * | 2013-11-05 | 2015-05-11 | 株式会社日本セラテック | Light-emitting element and light-emitting device |
JP2015098588A (en) * | 2013-10-17 | 2015-05-28 | デクセリアルズ株式会社 | Anisotropic conductive adhesive and connection structure |
WO2015191273A1 (en) * | 2014-06-10 | 2015-12-17 | 3M Innovative Properties Company | Flexible led assembly with uv protection |
WO2016148004A1 (en) * | 2015-03-18 | 2016-09-22 | デクセリアルズ株式会社 | Method for manufacturing light emitting device |
JP2016178225A (en) * | 2015-03-20 | 2016-10-06 | デクセリアルズ株式会社 | Anisotropic conductive connection structure, anisotropic conductive connection method, and anisotropic conductive adhesive |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62146972A (en) * | 1985-12-20 | 1987-06-30 | Oosakashi | Water-glass adhesive |
EP1857181A4 (en) * | 2005-02-15 | 2011-06-15 | Mitsui Chemicals Inc | Photocatalyst, method for producing same, liquid dispersion containing photocatalyst and photocatalyst coating composition |
JP2009014097A (en) * | 2007-07-04 | 2009-01-22 | Ntn Corp | Hydrostatic bearing pad |
JP4344399B1 (en) * | 2009-01-26 | 2009-10-14 | トリオ・セラミックス株式会社 | Curable inorganic composition |
JP2010192834A (en) * | 2009-02-20 | 2010-09-02 | Hitachi High-Technologies Corp | Acf thermocompression bonding apparatus |
CN102834927A (en) * | 2010-04-02 | 2012-12-19 | 株式会社则武 | Paste composition for solar cell, method for producing same, and solar cell |
KR101714049B1 (en) * | 2010-10-29 | 2017-03-08 | 엘지이노텍 주식회사 | Light emitting device package |
JP5609716B2 (en) * | 2011-03-07 | 2014-10-22 | デクセリアルズ株式会社 | Light-reflective anisotropic conductive adhesive and light-emitting device |
US9676969B2 (en) * | 2011-08-03 | 2017-06-13 | Hitachi Chemical Company, Ltd. | Composition set, conductive substrate and method of producing the same, and conductive adhesive composition |
US20150129847A1 (en) * | 2012-05-18 | 2015-05-14 | Konica Minolta, Inc. | Method for producing conductive substrate, conductive substrate, and organic electronic element |
JP5856903B2 (en) * | 2012-05-18 | 2016-02-10 | 東ソ−・エフテック株式会社 | Trifluoromethyl group-containing optically active β-amino acid derivative and process for producing the same |
KR101705068B1 (en) * | 2012-06-12 | 2017-02-09 | 코닝정밀소재 주식회사 | Inorganic adhesive composition and method for hermetic sealing using the same |
JP2014065766A (en) * | 2012-09-24 | 2014-04-17 | Dexerials Corp | Anisotropic conductive adhesive |
JP6176910B2 (en) * | 2012-09-24 | 2017-08-09 | デクセリアルズ株式会社 | Method for manufacturing connection structure |
JP2015046497A (en) * | 2013-08-28 | 2015-03-12 | 富士フイルム株式会社 | Reflection substrate for led light-emitting element, wiring board for led light-emitting element and led package |
JP6347635B2 (en) * | 2014-03-19 | 2018-06-27 | デクセリアルズ株式会社 | Anisotropic conductive adhesive |
JP6430148B2 (en) * | 2014-05-23 | 2018-11-28 | デクセリアルズ株式会社 | Adhesive and connection structure |
JP6634668B2 (en) * | 2014-08-29 | 2020-01-22 | 大日本印刷株式会社 | Manufacturing method of mounting board and mounting board |
-
2016
- 2016-11-29 JP JP2016231826A patent/JP2018088498A/en active Pending
-
2017
- 2017-11-09 WO PCT/JP2017/040440 patent/WO2018101003A1/en active Application Filing
- 2017-11-09 CN CN201780072639.2A patent/CN109997237A/en active Pending
- 2017-11-28 TW TW106141316A patent/TWI788313B/en active
-
2021
- 2021-06-02 JP JP2021093104A patent/JP7359804B2/en active Active
Patent Citations (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11289098A (en) * | 1998-01-30 | 1999-10-19 | Patent Treuhand Ges Elektr Gluehlamp Mbh | Optoelectronic semiconductor device and illuminating lamp or lamp |
JP2003249689A (en) * | 2001-12-18 | 2003-09-05 | Nichia Chem Ind Ltd | Light emitting device |
JP2007273753A (en) * | 2006-03-31 | 2007-10-18 | Kyocera Corp | Light emitting device and light emitting module |
JP2009140975A (en) * | 2007-12-04 | 2009-06-25 | Panasonic Electric Works Co Ltd | Semiconductor light-emitting device and lighting device using it and manufacturing process of semiconductor light-emitting device |
JP2013536540A (en) * | 2010-06-09 | 2013-09-19 | 海洋王照明科技股▲ふん▼有限公司 | Conductive adhesive mixture, fluorescent screen anode plate and method for producing them |
JP2013168622A (en) * | 2011-03-28 | 2013-08-29 | Fujifilm Corp | Reflection substrate for light-emitting element and method for manufacturing the same |
JP2013195364A (en) * | 2012-03-22 | 2013-09-30 | Tatsuta Electric Wire & Cable Co Ltd | Liquid detection sensor |
JP2013243344A (en) * | 2012-04-23 | 2013-12-05 | Nichia Chem Ind Ltd | Light-emitting device |
JP2015098588A (en) * | 2013-10-17 | 2015-05-28 | デクセリアルズ株式会社 | Anisotropic conductive adhesive and connection structure |
JP2015090887A (en) * | 2013-11-05 | 2015-05-11 | 株式会社日本セラテック | Light-emitting element and light-emitting device |
WO2015191273A1 (en) * | 2014-06-10 | 2015-12-17 | 3M Innovative Properties Company | Flexible led assembly with uv protection |
WO2016148004A1 (en) * | 2015-03-18 | 2016-09-22 | デクセリアルズ株式会社 | Method for manufacturing light emitting device |
JP2016178225A (en) * | 2015-03-20 | 2016-10-06 | デクセリアルズ株式会社 | Anisotropic conductive connection structure, anisotropic conductive connection method, and anisotropic conductive adhesive |
Also Published As
Publication number | Publication date |
---|---|
TW201834275A (en) | 2018-09-16 |
JP2021168387A (en) | 2021-10-21 |
CN109997237A (en) | 2019-07-09 |
WO2018101003A1 (en) | 2018-06-07 |
TWI788313B (en) | 2023-01-01 |
JP7359804B2 (en) | 2023-10-11 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN106062119B (en) | Anisotropically conducting adhesive | |
JP5370372B2 (en) | Semiconductor device and manufacturing method thereof | |
TWI626293B (en) | Anisotropic conductive adhesive | |
CN101621101A (en) | LED and production method thereof | |
JP6176910B2 (en) | Method for manufacturing connection structure | |
JP6066643B2 (en) | Anisotropic conductive adhesive | |
TW554553B (en) | Sub-mount for high power light emitting diode | |
WO2010084746A1 (en) | Semiconductor device and method for manufacturing same | |
WO2015046326A1 (en) | Light emitting device, anisotropic conductive adhesive and method for manufacturing light emitting device | |
TW201533212A (en) | Anisotropic conductive adhesive and connection structure | |
EP2975658A1 (en) | Light-emitting module | |
WO2016033229A1 (en) | Flip chip led package | |
US20140183575A1 (en) | Light emitting device and manufacturing method thereof | |
KR20200108117A (en) | Light-emitting device and method for manufacturing light-emitting device | |
TWI669721B (en) | Anisotropic conductive adhesive | |
JP7359804B2 (en) | Anisotropic conductive adhesive, light emitting device, and method for manufacturing the light emitting device | |
JP6430148B2 (en) | Adhesive and connection structure | |
US20060157859A1 (en) | Led packaging method and package structure | |
WO2021131586A1 (en) | Anisotropic electrically-conductive adhesive agent | |
JP2014065765A (en) | Anisotropic conductive adhesive | |
TWM295793U (en) | Light emitting diode package structure | |
JP2007081104A (en) | Method for manufacturing light emitting device |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20191016 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20200818 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20201014 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20210302 |