TWI785149B - 光罩對，兩面曝光裝置及光罩交換方法 - Google Patents

光罩對，兩面曝光裝置及光罩交換方法 Download PDF

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Publication number
TWI785149B
TWI785149B TW107140983A TW107140983A TWI785149B TW I785149 B TWI785149 B TW I785149B TW 107140983 A TW107140983 A TW 107140983A TW 107140983 A TW107140983 A TW 107140983A TW I785149 B TWI785149 B TW I785149B
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TW
Taiwan
Prior art keywords
substrate
aforementioned
mask
marks
auxiliary
Prior art date
Application number
TW107140983A
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English (en)
Chinese (zh)
Other versions
TW201926414A (zh
Inventor
名古屋淳
Original Assignee
日商亞多特克工程股份有限公司
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Application filed by 日商亞多特克工程股份有限公司 filed Critical 日商亞多特克工程股份有限公司
Publication of TW201926414A publication Critical patent/TW201926414A/zh
Application granted granted Critical
Publication of TWI785149B publication Critical patent/TWI785149B/zh

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
    • G03F7/2032—Simultaneous exposure of the front side and the backside
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/42—Alignment or registration features, e.g. alignment marks on the mask substrates
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70733—Handling masks and workpieces, e.g. exchange of workpiece or mask, transport of workpiece or mask
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70775—Position control, e.g. interferometers or encoders for determining the stage position
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7019—Calibration
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7049—Technique, e.g. interferometric

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
TW107140983A 2017-11-30 2018-11-19 光罩對，兩面曝光裝置及光罩交換方法 TWI785149B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017-231298 2017-11-30
JP2017231298A JP7323267B2 (ja) 2017-11-30 2017-11-30 両面露光装置

Publications (2)

Publication Number Publication Date
TW201926414A TW201926414A (zh) 2019-07-01
TWI785149B true TWI785149B (zh) 2022-12-01

Family

ID=66848389

Family Applications (1)

Application Number Title Priority Date Filing Date
TW107140983A TWI785149B (zh) 2017-11-30 2018-11-19 光罩對，兩面曝光裝置及光罩交換方法

Country Status (4)

Country Link
JP (2) JP7323267B2 (ko)
KR (1) KR102652832B1 (ko)
CN (1) CN109976086B (ko)
TW (1) TWI785149B (ko)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005326550A (ja) * 2004-05-13 2005-11-24 Sanee Giken Kk 露光装置
JP2006084783A (ja) * 2004-09-16 2006-03-30 Nsk Ltd 両面露光装置のマスクアライメント方法及びマスクアライメント装置

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000155430A (ja) 1998-11-24 2000-06-06 Nsk Ltd 両面露光装置における自動アライメント方法
JP2001125274A (ja) * 1999-10-26 2001-05-11 Matsushita Electric Works Ltd 回路板製造用露光装置
JP2006278648A (ja) 2005-03-29 2006-10-12 Nsk Ltd 両面露光方法
JP2006301170A (ja) * 2005-04-19 2006-11-02 Fujikura Ltd 露光装置およびその方法
JP5117672B2 (ja) * 2005-10-25 2013-01-16 サンエー技研株式会社 露光方法及び露光装置
JP2011155183A (ja) * 2010-01-28 2011-08-11 Fujikura Ltd プリント配線基板の製造方法、プリント配線基板の製造装置及びプリント配線基板
CN102768475A (zh) * 2012-07-26 2012-11-07 四川聚能核技术工程有限公司 曝光机对位修复系统及方法
JP6200224B2 (ja) * 2012-09-13 2017-09-20 日本メクトロン株式会社 フォトマスク、フォトマスク組、露光装置および露光方法
JP2015079109A (ja) 2013-10-17 2015-04-23 株式会社ハイテック 露光装置における位置制御方法および位置制御装置
KR101510156B1 (ko) * 2014-11-10 2015-04-08 (주)프리테크 리드프레임 제조용 노광장치
JP6296174B2 (ja) * 2015-01-15 2018-03-20 株式会社村田製作所 露光装置
CN105467779A (zh) * 2016-01-04 2016-04-06 京东方科技集团股份有限公司 一种曝光机及曝光方法
JP5997409B1 (ja) * 2016-05-26 2016-09-28 株式会社 ベアック 両面露光装置及び両面露光装置におけるマスクとワークとの位置合わせ方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005326550A (ja) * 2004-05-13 2005-11-24 Sanee Giken Kk 露光装置
JP2006084783A (ja) * 2004-09-16 2006-03-30 Nsk Ltd 両面露光装置のマスクアライメント方法及びマスクアライメント装置

Also Published As

Publication number Publication date
JP7364754B2 (ja) 2023-10-18
JP2019101198A (ja) 2019-06-24
KR20190064472A (ko) 2019-06-10
KR102652832B1 (ko) 2024-03-29
TW201926414A (zh) 2019-07-01
CN109976086A (zh) 2019-07-05
CN109976086B (zh) 2024-04-19
JP2022140811A (ja) 2022-09-27
JP7323267B2 (ja) 2023-08-08

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