TWI784175B - Method for forming optical wall by laser engraving an opening and optical wall structure - Google Patents

Method for forming optical wall by laser engraving an opening and optical wall structure Download PDF

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TWI784175B
TWI784175B TW108120738A TW108120738A TWI784175B TW I784175 B TWI784175 B TW I784175B TW 108120738 A TW108120738 A TW 108120738A TW 108120738 A TW108120738 A TW 108120738A TW I784175 B TWI784175 B TW I784175B
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wall
barrier
opening
layer
film
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TW202045287A (en
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李蕙如
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培英半導體有限公司
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Abstract

The invention provides an optical wall structure, which includes a substrate, a first wall layer, a laser shielding copper layer and a second wall layer. The first wall layer is formed on a working surface of the substrate and defines a first opening exposing the working surface. The laser shielding copper layer is formed not on a side wall surrounding the first opening but on a top surface of the first wall layer. The second wall layer is formed on the laser shielding copper layer and defines a second opening. The second wall layer has a cross-section area smaller than the first wall layer. The second opening has a contour wider that the first opening, and the second opening exposes a part of the laser shielding layer. The present invention also provides a method for forming optical wall by laser engraving an opening.

Description

以雷射開窗形成光學擋牆的方法及光學擋牆結構Method for Forming Optical Retaining Wall by Laser Opening and Structure of Optical Retaining Wall

本發明是關於一種光電機構的製作方法及結構,特別是關於一種在光電機構上形成擋牆的製作方法及其結構。The invention relates to a manufacturing method and structure of a photoelectric mechanism, in particular to a manufacturing method and structure for forming a retaining wall on the photoelectric mechanism.

現有的光感測器包括一發光單元及一感光單元,發光單元所發射的光線被偵測物反射後,可由感光單元接收並輸出一感測訊號。為了避免發光單元所發出的光線直接傳遞到感光單元,現有的光感測器會在發光單元與感光單元之間設置擋牆,讓發光單元只在預定的方向發出光線,並讓感光單元只感測來自預定方向的光線,藉此增加光感測器的可靠度。The existing light sensor includes a light-emitting unit and a light-sensing unit. After the light emitted by the light-emitting unit is reflected by the object to be detected, the light-sensing unit can receive and output a sensing signal. In order to prevent the light emitted by the light-emitting unit from being directly transmitted to the photosensitive unit, the existing light sensor will set a barrier between the light-emitting unit and the photosensitive unit, so that the light-emitting unit can only emit light in a predetermined direction, and the photosensitive unit can only sense the light. Detect light from a predetermined direction, thereby increasing the reliability of the light sensor.

現有光感測器的擋牆多是藉由射出成型(injection molding)等模塑方式來形成,但此製程有其不足在於:(1)易有溢膠問題,因而降低良率;(2)易因模塑偏移(mold shift)而影響精度,且不利小型化;(3)需針對不同擋牆造型分別製作模具,因而增加成本。The retaining walls of existing photosensors are mostly formed by molding methods such as injection molding, but this process has its disadvantages: (1) It is easy to have glue overflow, thus reducing the yield; (2) It is easy to affect the accuracy due to mold shift, and it is not conducive to miniaturization; (3) It is necessary to make molds for different retaining wall shapes, thus increasing the cost.

有鑑於此,本發明之主要目的在於提供一種可提高精度並降低成本的光電機構製程。In view of this, the main purpose of the present invention is to provide a photoelectric mechanism manufacturing process that can improve precision and reduce cost.

為了達成上述及其他目的,本發明提供一種以雷射開窗形成光學擋牆的方法,包括: 提供一基板,該基板具有一工作面; 將一第一擋牆膜形成於該工作面,該第一擋牆膜具有一第一擋牆區及一第一非擋牆區; 在該第一擋牆膜進行雷射雕刻前,將一第二擋牆膜形成於該第一擋牆膜上,該第二擋牆膜具有一第二擋牆區及一第二非擋牆區,該第二擋牆區位於該第一擋牆區上,且該第二擋牆區的橫截面積不大於該第一擋牆區; 利用雷射光束將該第一、第二非擋牆區移除,保留該第一、第二擋牆區,其中該第一、第二擋牆區圍構一裸露該工作面的開窗。In order to achieve the above and other objects, the present invention provides a method for forming an optical barrier by laser opening, comprising: providing a substrate having a working surface; forming a first wall membrane on the working surface, the first wall membrane having a first wall area and a first non-wall area; Before the first wall film is laser engraved, a second wall film is formed on the first wall film, the second wall film has a second wall area and a second non-wall film area, the second wall area is located on the first wall area, and the cross-sectional area of the second wall area is not larger than that of the first wall area; The first and second non-blocking wall areas are removed by using a laser beam, and the first and second blocking wall areas are retained, wherein the first and second blocking wall areas enclose a window that exposes the working surface.

為了達成上述及其他目的,本發明還提供一種光學擋牆結構,其包括一基板、一第一擋牆層、一雷射遮蔽銅層及一第二擋牆層,基板具有一工作面,第一擋牆層形成於工作面上,且第一擋牆層圍構一裸露工作面的第一開窗;雷射遮蔽銅層形成於第一擋牆層的一上表面但不形成於圍構第一開窗的側壁;第二擋牆層形成於雷射遮蔽銅層上,且第二擋牆層圍構一第二開窗,第二擋牆層的橫截面積小於第一擋牆層,第二開窗的輪廓大於第一開窗,且第二開窗裸露雷射遮蔽銅層的一部分。In order to achieve the above and other objectives, the present invention also provides an optical barrier structure, which includes a substrate, a first barrier layer, a laser shielding copper layer and a second barrier layer, the substrate has a working surface, the first A retaining wall layer is formed on the working surface, and the first retaining wall layer encloses a first opening of a bare working surface; the laser shielding copper layer is formed on an upper surface of the first retaining wall layer but not formed on the enclosure The side wall of the first opening; the second retaining wall layer is formed on the laser shielding copper layer, and the second retaining wall layer encloses a second opening, and the cross-sectional area of the second retaining wall layer is smaller than that of the first retaining wall layer , the contour of the second opening is larger than that of the first opening, and the second opening exposes a part of the laser shielding copper layer.

經由上述方法所形成的擋牆精度高,加工成本得以下降,且光電機構的電路設計自由度得以提高,即便修改開窗位置或形狀,也不須如先前技術般重新製作或修改模具。並且,通過在擋牆層之間形成雷射遮蔽銅層的方法,能夠在一次雷射雕刻作業中使多層擋牆層具有不同的輪廓,藉此大幅提高設計自由度。The retaining wall formed by the above method has high precision, reduces the processing cost, and improves the freedom of circuit design of the photoelectric mechanism. Even if the position or shape of the window is modified, it is not necessary to remake or modify the mold as in the prior art. Moreover, by forming a laser shielding copper layer between the barrier wall layers, multiple layers of barrier wall layers can have different profiles in one laser engraving operation, thereby greatly improving the degree of design freedom.

本發明是一種以雷射開窗形成光學擋牆的方法及其光學擋牆結構,所述光學擋牆結構可應用於發光設備、感光設備或同時具有發光與感光功能的設備,例如先前技術所述的光感測器,所述光感測器可應用於但不限於遙控器、側距儀。The present invention is a method for forming an optical barrier by opening a window with a laser and its optical barrier structure. The optical barrier structure can be applied to a light-emitting device, a photosensitive device, or a device that has both light-emitting and photosensitive functions, such as the prior art. The light sensor described above can be applied to but not limited to remote controllers and side distance meters.

以下通過第1至12圖說明以雷射開窗形成光學擋牆的方法的其中一實施方式。One embodiment of the method for forming an optical barrier by laser opening is described below with reference to FIGS. 1 to 12 .

請參考第1圖,首先提供一基板10,其具有一工作面11,該基板10可以是預製有電路的電路板或LED用的導線架,舉例而言,基板10具有絕緣基材及形成於絕緣基材的電路結構及電接點,所述絕緣基材例如是環氧樹脂、玻璃布(woven glass)、聚酯或其他常用於製作電路板基材的材質。Please refer to Fig. 1, at first provide a substrate 10, it has a working surface 11, this substrate 10 can be the circuit board that prefabricated with the circuit or the lead frame that LED is used, for example, substrate 10 has insulating substrate and is formed on The circuit structure and electrical contacts of the insulating substrate, such as epoxy resin, glass cloth (woven glass), polyester or other materials commonly used in making circuit board substrates.

接著,請參考第2圖,利用層合機將一光可固化或熱可固化的第一擋牆膜20層合於工作面11,圖式中所繪示的虛線表現第一擋牆膜20一第一擋牆區21及一第一非擋牆區22之間的邊界,第一擋牆區21例如成環狀,第一非擋牆區22至少一部分被包圍在第一擋牆區21之間。在第1圖所繪示的狀態中,第一擋牆膜20處於尚未完全固化的狀態,此時第一擋牆區21及第一非擋牆區22在化學結構上尚無實質差異;第一擋牆膜20形成於工作面11後,可被進一步光固化或熱固化。在層合於工作面11前,所述第一擋牆膜20例如是預先形成於一乘載膜上,乘載膜在第一擋牆膜20層合於工作面11後被移除,所述承載膜可為聚乙烯對苯二甲酸酯(PET)或其他聚酯薄膜、聚醯亞胺薄膜、聚醯胺醯亞胺薄膜、聚丙烯薄膜、聚苯乙烯薄膜。在可能的實施方式中,第一擋牆膜20為黑色而可吸收大部分的光線。在其他可能的實施方式中,第一擋牆膜也可以通過將未固化的擋牆漿料通過網版印刷或其他塗布方式塗布在工作面上,而後進行固化而形成。 Next, please refer to FIG. 2, use a laminator to laminate a light-curable or heat-curable first barrier film 20 on the working surface 11, the dotted line shown in the figure represents the first barrier film 20 The boundary between a first wall area 21 and a first non-wall area 22, the first wall area 21 is, for example, ring-shaped, and at least a part of the first non-wall area 22 is surrounded by the first wall area 21 between. In the state shown in FIG. 1 , the first barrier film 20 is not fully cured, and at this moment, the first barrier region 21 and the first non-retainer region 22 have no substantial difference in chemical structure; After a barrier film 20 is formed on the working surface 11, it can be further cured by light or heat. Before being laminated on the working surface 11, the first barrier film 20 is pre-formed on a carrier film, for example, and the carrier film is removed after the first barrier film 20 is laminated on the working surface 11, so The carrier film can be polyethylene terephthalate (PET) or other polyester films, polyimide films, polyamideimide films, polypropylene films, polystyrene films. In a possible implementation, the first barrier film 20 is black and can absorb most of the light. In other possible implementation manners, the first retaining wall membrane may also be formed by coating uncured retaining wall slurry on the working surface by screen printing or other coating methods, and then curing it.

如第3圖所示,以化學鍍、濺鍍或其他方式在第一擋牆膜20的上表面201形成一雷射遮蔽銅層30。 As shown in FIG. 3 , a laser shielding copper layer 30 is formed on the upper surface 201 of the first barrier film 20 by electroless plating, sputtering or other methods.

接著,如第4圖所示,在雷射遮蔽銅層30上形成一光阻層31,並對光阻層31選擇性照射、曝光。 Next, as shown in FIG. 4 , a photoresist layer 31 is formed on the laser shielding copper layer 30 , and the photoresist layer 31 is selectively irradiated and exposed.

再接著,如第5圖所示,以顯影液將對正對第一非擋牆區22的光阻層31的部分選擇性移除,裸露底下的雷射遮蔽銅層30。 Next, as shown in FIG. 5 , the portion of the photoresist layer 31 opposite to the first non-blocking wall region 22 is selectively removed with a developer, exposing the underlying laser shielding copper layer 30 .

然後,如第6圖所示,以蝕刻液將正對第一非擋牆區22的雷射遮蔽銅層30的部分選擇性移除,裸露底下的第一擋牆層20,特別是裸露底下的第一非擋牆區22。 Then, as shown in FIG. 6, the portion of the laser-shielded copper layer 30 facing the first non-wall region 22 is selectively removed with an etchant, exposing the first wall layer 20 underneath, especially the exposed bottom layer. The first non-retaining wall area 22.

如第7圖所示,移除光阻層。 As shown in Figure 7, remove the photoresist layer.

如第8圖所示,在第一擋牆膜20進行雷射雕刻前且已經被預先固化後,將一光可固化或熱可固化的第二擋牆膜40形成於第一擋牆膜20上,其中第二擋牆膜40的一部分還覆蓋雷射遮蔽銅層30。與第一擋牆膜20相似,第二擋牆膜40同樣具有一第二擋牆區41及一第二非擋牆區42,第二擋牆區41位於第一擋牆區21上方,且第二擋牆區41的橫截面積不大於第一擋牆區21,亦即,第二擋牆區41的輪廓相當於或小於第一擋牆區21。相似地,在層合於第一擋牆膜20前,未完全固化的第二擋牆膜40也例如是預先形成於一乘載膜上,第二擋牆膜40形成於第一擋牆膜20後,可被進一步光固化或熱固化,乘載膜可在第二擋牆膜40層合於第一擋牆膜20後被移除,所述承載膜可為聚乙烯對苯二甲酸酯(PET)或其他聚酯薄膜、聚醯亞胺薄膜、聚醯胺醯亞胺薄膜、聚丙烯薄膜、聚苯乙烯薄膜。在可能的實施方式中,第二擋牆膜40同樣為黑色而可吸收大部分的光線。在其他可能的實施方式中,第二擋牆膜也可以通過將未固化的擋牆漿料通過網版印刷或其他塗布方式塗布在第一擋牆膜上,而後進行固化而形成。As shown in FIG. 8, before the first wall film 20 is laser engraved and pre-cured, a light-curable or heat-curable second wall film 40 is formed on the first wall film 20. , wherein a part of the second barrier film 40 also covers the laser shielding copper layer 30 . Similar to the first wall film 20, the second wall film 40 also has a second wall area 41 and a second non-wall area 42, the second wall area 41 is located above the first wall area 21, and The cross-sectional area of the second wall area 41 is not larger than that of the first wall area 21 , that is, the profile of the second wall area 41 is equal to or smaller than that of the first wall area 21 . Similarly, before being laminated on the first wall film 20, the incompletely cured second wall film 40 is pre-formed on a carrier film, and the second wall film 40 is formed on the first wall film After 20, it can be further cured by light or heat. The carrier film can be removed after the second wall film 40 is laminated on the first wall film 20. The carrier film can be polyethylene terephthalic acid Polyester (PET) or other polyester film, polyimide film, polyamideimide film, polypropylene film, polystyrene film. In a possible implementation, the second barrier film 40 is also black to absorb most of the light. In other possible implementation manners, the second barrier wall membrane may also be formed by coating the uncured barrier wall slurry on the first barrier wall membrane by screen printing or other coating methods, and then curing.

如第9圖所示,利用雷射雕刻機發射雷射光束,選擇性地將第一、第二非擋牆區22、42移除,其中,部分雷射光束雖然穿透了第二非擋牆區42,但因為被雷射遮蔽銅層30遮蔽,而無法再繼續深入,藉此保留雷射遮蔽銅層30底下的第一擋牆區21,形成第10圖所示的狀態,留下來的第一、第二擋牆區21、41分別作為第一、第二擋牆層20A、40A,第一擋牆層20A圍構一第一開窗601,第二擋牆層40A圍構一第二開窗602,第一、第二開窗601、602的組合為一個可裸露工作面11的開窗60。本實施例中,第二擋牆層40A的橫截面積小於第一擋牆層20A,且第二開窗602的輪廓大於第一開窗601,這樣的漸擴型開窗有助於機械手臂或其他機構作業。As shown in Figure 9, a laser engraving machine is used to emit a laser beam to selectively remove the first and second non-blocking wall areas 22, 42, wherein, although part of the laser beam penetrates the second non-blocking wall Wall area 42, but because it is shielded by the laser shielding copper layer 30, it can no longer go deeper, thereby retaining the first wall area 21 under the laser shielding copper layer 30, forming the state shown in Figure 10, and staying The first and second retaining wall areas 21 and 41 are respectively used as the first and second retaining wall layers 20A and 40A, the first retaining wall layer 20A encloses a first opening 601, and the second retaining wall layer 40A encloses a The combination of the second window 602 and the first and second windows 601 and 602 forms a window 60 that can expose the working surface 11 . In this embodiment, the cross-sectional area of the second retaining wall layer 40A is smaller than that of the first retaining wall layer 20A, and the profile of the second opening 602 is larger than that of the first opening 601. or other agencies.

接著,如第11圖所示,在開窗60內的工作面11上形成光電單元70,光電單元70的數量可視需求而定,且光電單元70為發光單元及感光單元其中一者,且第一、第二擋牆層20A、40A及雷射遮蔽銅層30的組合所形成的擋牆高於光電單元70,而用以阻擋光線。光電單元70可與基板10上的電路結構或電接點形成電性連接,所述電性連接例如是通過打線接合(wire bonding)實現;在光電單元為覆晶LED的場合或其他適當的情形中,可以省略打線接合步驟。發光單元例如為LED,感光單元例如為CCD或CMOS,發光單元用以發射光線,感光單元用以感測光線,所述光線可為可見光或不可見光,例如紅外線。Next, as shown in Fig. 11, photoelectric units 70 are formed on the working surface 11 in the window 60. The number of photoelectric units 70 can be determined according to requirements, and the photoelectric units 70 are one of light-emitting units and photosensitive units, and the second 1. The barrier formed by the combination of the second barrier layer 20A, 40A and the laser shielding copper layer 30 is higher than the photoelectric unit 70 to block light. The photoelectric unit 70 can form an electrical connection with the circuit structure or electrical contacts on the substrate 10. The electrical connection is realized by, for example, wire bonding; when the photoelectric unit is a flip-chip LED or other appropriate situations , the wire bonding step can be omitted. The light-emitting unit is, for example, LED, and the photosensitive unit is, for example, CCD or CMOS. The light-emitting unit is used to emit light, and the photosensitive unit is used to sense light. The light can be visible light or invisible light, such as infrared light.

接著,如第12圖所示,於開窗60內點膠,所點的膠體80為可透光膠體,例如透明膠或螢光膠,用以保護所述光電單元70及/或用以發出預選波長的光線,亦即,所製得的光學擋牆結構具有一基板10、一具有第一開窗601的第一擋牆層20A、一形成於第一擋牆層20A的上表面但不形成於圍構第一開窗601的側壁的雷射遮蔽銅層30、一具有第二開窗602的第二擋牆層40A、一形成於工作面11上且位於開窗60內的光電單元70、以及一形成於開窗60內的膠體80。Next, as shown in FIG. 12, glue is dispensed in the window 60. The glue 80 is a light-transmitting glue, such as transparent glue or fluorescent glue, to protect the photoelectric unit 70 and/or to emit light. light of a preselected wavelength, that is, the prepared optical barrier structure has a substrate 10, a first barrier layer 20A with a first opening 601, and a first barrier layer 20A formed on the upper surface of the first barrier layer 20A but not The laser shielding copper layer 30 formed on the side wall surrounding the first opening 601, a second barrier layer 40A with the second opening 602, a photoelectric unit formed on the working surface 11 and located in the opening 60 70 , and a colloid 80 formed in the window 60 .

需說明的是,前述實施例僅以兩層擋牆層為例進行說明,在本發明其他可能的實施方式中,也可以通過類似的多層層疊方法形成更多層的擋牆層,例如在第13圖所示的實施例中,所製得的光學擋牆結構具有一基板10、一具有第一開窗601的第一擋牆層20A、一形成於第一擋牆層20A的上表面但不形成於圍構第一開窗601的側壁的雷射遮蔽銅層30、一具有第二開窗602的第二擋牆層40A、一形成於第二擋牆層40A的上表面但不形成於圍構第二開窗602的側壁的雷射遮蔽銅層35、一具有第三開窗603的第三擋牆層50A、一形成於工作面11上且位於開窗60內的光電單元70、以及一形成於開窗60內的膠體80。It should be noted that the foregoing embodiments only take two layers of retaining wall layers as an example. In other possible implementations of the present invention, more layers of retaining wall layers can also be formed by a similar multi-layer stacking method. For example, in In the embodiment shown in FIG. 13 , the prepared optical barrier structure has a substrate 10, a first barrier layer 20A with a first opening 601, and an upper surface of the first barrier layer 20A but The laser shielding copper layer 30 not formed on the sidewall surrounding the first opening 601, a second barrier layer 40A with the second opening 602, and a second barrier layer 40A formed on the upper surface but not formed The laser shielding copper layer 35 surrounding the side wall of the second opening 602, a third barrier layer 50A with the third opening 603, and a photoelectric unit 70 formed on the working surface 11 and located in the opening 60 , and a colloid 80 formed in the window 60 .

綜合上述,通過在擋牆層之間形成雷射遮蔽銅層的方法,能夠在一次雷射雕刻作業中使多層擋牆層具有不同的輪廓,藉此大幅提高設計自由度。In summary, by forming a laser shielding copper layer between the retaining wall layers, multiple layers of retaining wall layers can have different profiles in one laser engraving operation, thereby greatly increasing the degree of freedom in design.

在其他可能的實施方式中,可以通過調整雷射光束中心區及外圍區的雷射強度,使得雷射光束中心區具有較強的穿透能力,藉此在不設置雷射遮蔽銅層的情況下,也能形成階梯狀或漸擴狀的開窗。In other possible implementation manners, the laser intensity in the central area and the peripheral area of the laser beam can be adjusted so that the central area of the laser beam has a strong penetrating ability, so that the laser shielding copper layer is not set. Down, it can also form a stepped or gradually expanding window.

10:基板 11:工作面 20:第一擋牆膜 20A:第一擋牆層 201:上表面 21:第一擋牆區 22:第一非擋牆區 30、35:雷射遮蔽銅層 31:光阻層 40:第二擋牆膜 40A:第二擋牆層 41:第二擋牆區 42:第二非擋牆區 50A:第三擋牆層 60:開窗 601:第一開窗 602:第二開窗 603:第三開窗 70:光電單元 80:膠體 10: Substrate 11: Working surface 20: First Wall Membrane 20A: The first retaining wall layer 201: upper surface 21: The first wall area 22: The first non-retaining wall area 30, 35: laser shielding copper layer 31: photoresist layer 40:Second wall membrane 40A: Second retaining wall layer 41: Second retaining wall area 42: The second non-retaining wall area 50A: The third retaining wall layer 60: open window 601: First window opening 602: second window opening 603: The third window 70: photoelectric unit 80: colloid

第1至12圖為本發明第一實施例的製作方法示意圖。1 to 12 are schematic diagrams of the manufacturing method of the first embodiment of the present invention.

第13圖為本發明光學擋牆結構的另一實施例。Fig. 13 is another embodiment of the optical barrier structure of the present invention.

10:基板 10: Substrate

11:工作面 11: Working surface

20A:第一擋牆層 20A: The first retaining wall layer

30:雷射遮蔽銅層 30:Laser masking copper layer

40A:第二擋牆層 40A: Second retaining wall layer

60:開窗 60: open window

601:第一開窗 601: First window opening

602:第二開窗 602: second window opening

70:光電單元 70: photoelectric unit

80:膠體 80: colloid

Claims (7)

一種以雷射開窗形成光學擋牆的方法,包括:提供一基板,該基板具有一工作面;將一第一擋牆膜形成於該工作面,該第一擋牆膜具有一第一擋牆區及一第一非擋牆區;在該第一擋牆膜進行雷射雕刻前,將一第二擋牆膜形成於該第一擋牆膜上,該第二擋牆膜具有一第二擋牆區及一第二非擋牆區,該第二擋牆區位於該第一擋牆區上,且該第二擋牆區的橫截面積不大於該第一擋牆區;利用雷射光束將該第一、第二非擋牆區移除,保留該第一、第二擋牆區,其中該第一、第二擋牆區圍構一裸露該工作面的開窗;其中該第一擋牆膜形成於該工作面後,更在該第一擋牆膜上形成一裸露該第一非擋牆區但覆蓋該第一擋牆區的雷射遮蔽銅層,該第二擋牆膜形成於該第一擋牆膜時,該第二擋牆膜的一部分是覆蓋於該雷射遮蔽銅層。 A method for forming an optical barrier by laser opening, comprising: providing a substrate with a working surface; forming a first barrier film on the working surface, the first barrier film having a first barrier wall area and a first non-wall area; before the first wall film is laser engraved, a second wall film is formed on the first wall film, and the second wall film has a first Two retaining wall areas and a second non-retaining wall area, the second retaining wall area is located on the first retaining wall area, and the cross-sectional area of the second retaining wall area is not larger than the first retaining wall area; The first and second non-retaining wall areas are removed by the beam of light, and the first and second retaining wall areas are retained, wherein the first and second retaining wall areas enclose a window that exposes the working surface; wherein the After the first barrier film is formed on the working surface, a laser shielding copper layer that exposes the first non-wall area but covers the first wall area is formed on the first barrier film, and the second barrier film When the wall film is formed on the first wall film, a part of the second wall film covers the laser shielding copper layer. 如請求項1所述以雷射開窗形成光學擋牆的方法,其中該第二擋牆區的橫截面積小於該第一擋牆區。 The method for forming an optical barrier by laser opening as claimed in claim 1, wherein the cross-sectional area of the second barrier region is smaller than that of the first barrier region. 如請求項1所述以雷射開窗形成光學擋牆的方法,更包括:在該第一、第二非擋牆區被移除後,在該開窗內的工作面上形成至少一光電單元,該光電單元為發光單元及感光單元其中一者。 The method for forming an optical barrier by opening a laser window as described in claim 1 further includes: after the first and second non-blocking wall regions are removed, forming at least one photoelectric barrier on the working surface in the window A unit, the photoelectric unit is one of a light emitting unit and a photosensitive unit. 如請求項3所述以雷射開窗形成光學擋牆的方法,更包括:在該開窗內設置該至少一光電單元之後,更在該開窗內點膠。 The method for forming an optical barrier by opening a laser window as described in claim 3 further includes: after disposing the at least one photoelectric unit in the window, dispensing glue in the window. 如請求項1所述以雷射開窗形成光學擋牆的方法,其中該第一擋牆膜形成於該工作面時尚未完全固化,該第二擋牆膜形成於該第一擋牆膜前,該第一擋牆膜被完全固化。 The method for forming an optical barrier by laser window opening as described in claim 1, wherein the first barrier film is not fully cured when formed on the working surface, and the second barrier film is formed before the first barrier film , the first wall membrane is fully cured. 一種光學擋牆結構,包括:一基板,具有一工作面;一形成於該工作面上的第一擋牆層,該第一擋牆層圍構一第一開窗,該工作面在該第一開窗中裸露;一雷射遮蔽銅層,形成於該第一擋牆層的一上表面但不形成於圍構該第一開窗的側壁;以及一形成於該雷射遮蔽銅層上的第二擋牆層,該第二擋牆層圍構一第二開窗,該第二擋牆層的橫截面積小於該第一擋牆層,該第二開窗的輪廓大於該第一開窗,且該第二開窗裸露該雷射遮蔽銅層的一部分。 An optical barrier structure, comprising: a base plate with a working surface; a first barrier layer formed on the working surface, the first barrier layer enclosing a first window, the working surface on the first A window is exposed; a laser shielding copper layer is formed on an upper surface of the first wall layer but not formed on the side walls surrounding the first window; and a laser shielding copper layer is formed on the copper layer The second retaining wall layer encloses a second opening, the cross-sectional area of the second retaining wall layer is smaller than that of the first retaining wall layer, and the profile of the second opening is larger than that of the first retaining wall layer. opening a window, and the second opening exposes a part of the laser shielding copper layer. 如請求項6所述的光學擋牆結構,更包括至少一光電單元形成於該第一、第二開窗內的工作面上。 The optical blocking wall structure as claimed in claim 6 further includes at least one photoelectric unit formed on the working surfaces in the first and second openings.
TW108120738A 2019-06-14 2019-06-14 Method for forming optical wall by laser engraving an opening and optical wall structure TWI784175B (en)

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Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070177380A1 (en) * 2006-01-31 2007-08-02 3M Innovative Properties Company Led illumination assembly with compliant foil construction
WO2011097379A1 (en) * 2010-02-03 2011-08-11 Soraa, Inc. Reflection mode package for optical devices using gallium and nitrogen containing materials
EP1664393B1 (en) * 2003-07-14 2013-11-06 Allegis Technologies, Inc. METHOD OF PROducING GALLIUM NITRIDE LEDs
CN106469660A (en) * 2015-08-21 2017-03-01 意法半导体(R&D)有限公司 There is molding range finding and the proximity sensor of optical resin lens
TWM548360U (en) * 2017-01-13 2017-09-01 李玟慧 Package structure for light-emitting diode with high heat dissipation function
TWM571105U (en) * 2018-12-01 Circuit board structure with laser windowing area
TWM574336U (en) * 2018-11-13 2019-02-11 同泰電子科技股份有限公司 Photoelectric mechanism with retaining wall

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWM571105U (en) * 2018-12-01 Circuit board structure with laser windowing area
EP1664393B1 (en) * 2003-07-14 2013-11-06 Allegis Technologies, Inc. METHOD OF PROducING GALLIUM NITRIDE LEDs
US20070177380A1 (en) * 2006-01-31 2007-08-02 3M Innovative Properties Company Led illumination assembly with compliant foil construction
WO2011097379A1 (en) * 2010-02-03 2011-08-11 Soraa, Inc. Reflection mode package for optical devices using gallium and nitrogen containing materials
CN106469660A (en) * 2015-08-21 2017-03-01 意法半导体(R&D)有限公司 There is molding range finding and the proximity sensor of optical resin lens
TWM548360U (en) * 2017-01-13 2017-09-01 李玟慧 Package structure for light-emitting diode with high heat dissipation function
TWM574336U (en) * 2018-11-13 2019-02-11 同泰電子科技股份有限公司 Photoelectric mechanism with retaining wall

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