TWM590214U - Optical retaining wall structure - Google Patents
Optical retaining wall structure Download PDFInfo
- Publication number
- TWM590214U TWM590214U TW108207624U TW108207624U TWM590214U TW M590214 U TWM590214 U TW M590214U TW 108207624 U TW108207624 U TW 108207624U TW 108207624 U TW108207624 U TW 108207624U TW M590214 U TWM590214 U TW M590214U
- Authority
- TW
- Taiwan
- Prior art keywords
- retaining wall
- window
- wall layer
- film
- light
- Prior art date
Links
Images
Landscapes
- Light Receiving Elements (AREA)
Abstract
本新型提供一種光學擋牆結構,其包括一基板、一第一擋牆層及一第二擋牆層,基板具有一工作面,第一擋牆層形成於工作面上,且第一擋牆層圍構一裸露工作面的第一開窗;第二擋牆層形成於第一擋牆層上,且第二擋牆層圍構一第二開窗,第二擋牆層的橫截面積小於第一擋牆層,且第二開窗的輪廓大於第一開窗。The invention provides an optical retaining wall structure, which includes a substrate, a first retaining wall layer and a second retaining wall layer, the substrate has a working surface, the first retaining wall layer is formed on the working surface, and the first retaining wall The layer surrounds a first opening window of an exposed working surface; the second retaining wall layer is formed on the first retaining wall layer, and the second retaining wall layer surrounds a second opening window, and the cross-sectional area of the second retaining wall layer It is smaller than the first retaining wall layer, and the outline of the second window is larger than the first window.
Description
本新型是關於一種光電機構的結構,特別是關於一種在光電機構上形成擋牆的結構。The present invention relates to a structure of a photoelectric mechanism, in particular to a structure that forms a retaining wall on the photoelectric mechanism.
現有的光感測器包括一發光單元及一感光單元,發光單元所發射的光線被偵測物反射後,可由感光單元接收並輸出一感測訊號。為了避免發光單元所發出的光線直接傳遞到感光單元,現有的光感測器會在發光單元與感光單元之間設置擋牆,讓發光單元只在預定的方向發出光線,並讓感光單元只感測來自預定方向的光線,藉此增加光感測器的可靠度。The existing light sensor includes a light-emitting unit and a photosensitive unit. After the light emitted by the light-emitting unit is reflected by the detection object, the light-sensing unit can receive and output a sensing signal. In order to prevent the light emitted by the light emitting unit from being directly transmitted to the photosensitive unit, the existing light sensor will set a barrier wall between the light emitting unit and the photosensitive unit, so that the light emitting unit emits light only in a predetermined direction, and the photosensitive unit only Light from a predetermined direction is measured, thereby increasing the reliability of the light sensor.
現有光感測器的擋牆多是藉由射出成型(injection molding)等模塑方式來形成,但此製程有其不足在於:(1)易有溢膠問題,因而降低良率;(2)易因模塑偏移(mold shift)而影響精度,且不利小型化;(3)需針對不同擋牆造型分別製作模具,因而增加成本。Retaining walls of existing light sensors are mostly formed by injection molding and other molding methods, but this process has its shortcomings: (1) There is a problem of overflowing glue, which reduces the yield; (2) It is easy to affect the accuracy due to mold shift, and it is not conducive to miniaturization; (3) It is necessary to separately make molds for different retaining wall shapes, thus increasing costs.
有鑑於此,本新型之主要目的在於提供一種可提高精度並降低成本的光電機構。In view of this, the main purpose of the present invention is to provide an optoelectronic mechanism that can improve accuracy and reduce costs.
為了達成上述及其他目的,本新型提供一種光學擋牆結構,其包括一基板、一第一擋牆層及一第二擋牆層,基板具有一工作面,第一擋牆層形成於工作面上,且第一擋牆層圍構一裸露工作面的第一開窗;第二擋牆層形成於第一擋牆層上,且第二擋牆層圍構一第二開窗,第二擋牆層的橫截面積小於第一擋牆層,且第二開窗的輪廓大於第一開窗。In order to achieve the above and other objects, the present invention provides an optical retaining wall structure including a substrate, a first retaining wall layer and a second retaining wall layer, the substrate has a working surface, and the first retaining wall layer is formed on the working surface And the first retaining wall layer encloses a first opening window of the exposed working surface; the second retaining wall layer is formed on the first retaining wall layer, and the second retaining wall layer encloses a second opening window, the second The cross-sectional area of the retaining wall layer is smaller than the first retaining wall layer, and the profile of the second window opening is larger than that of the first window opening.
經由上述設計所形成的擋牆精度高,加工成本得以下降,且光電機構的電路設計自由度得以提高,即便修改開窗位置或形狀,也不須如先前技術般重新製作或修改模具。並且,通過多次光固化一次蝕刻的方法,能夠使多層擋牆層具有不同的輪廓,也能提升整體擋牆層的厚度,藉此大幅提高設計自由度。The retaining wall formed by the above design has high precision, the processing cost can be reduced, and the circuit design freedom of the photoelectric mechanism can be improved. Even if the position or shape of the window is modified, it is not necessary to remake or modify the mold as in the prior art. In addition, the method of multiple photo-curing and one-time etching can make the multi-layer retaining wall layer have different profiles, and can also increase the thickness of the overall retaining wall layer, thereby greatly improving the degree of design freedom.
本新型是應用一種以多次光固化一次蝕刻形成光學擋牆的方法以形成一光學擋牆結構,所述光學擋牆結構可應用於發光設備、感光設備或同時具有發光與感光功能的設備,例如先前技術所述的光感測器,所述光感測器可應用於但不限於遙控器、側距儀。The present invention is to apply a method of forming an optical barrier wall by multiple photo-curing and one-time etching to form an optical barrier wall structure. The optical barrier wall structure can be applied to a light-emitting device, a photosensitive device, or a device having both light-emitting and photosensitive functions. For example, the photo sensor described in the prior art can be applied to, but not limited to, a remote controller and a lateral distance meter.
以下通過第1至12圖說明以多次光固化一次蝕刻形成光學擋牆的方法的其中一實施方式。The following describes one embodiment of a method for forming an optical barrier by multiple photo-curing and one-time etching through FIGS. 1-12.
請參考第1圖,首先提供一基板10,其具有一工作面11,該基板10可以是預製有電路的電路板或LED用的導線架,舉例而言,基板10具有絕緣基材及形成於絕緣基材的電路結構及電接點,所述絕緣基材例如是環氧樹脂、玻璃布(woven glass)、聚酯或其他常用於製作電路板基材的材質。Please refer to FIG. 1, firstly, a
接著,請參考第2圖,利用層合機將一光可固化的第一擋牆膜20層合於工作面11,圖式中所繪示的虛線表現第一擋牆膜20一第一擋牆區21及一第一非擋牆區22之間的邊界,第一擋牆區21例如成環狀,第一非擋牆區22至少一部分被包圍在第一擋牆區21之間。在第1圖所繪示的狀態中,第一擋牆膜20處於尚未完全固化的狀態,此時第一擋牆區21及第一非擋牆區22在化學結構上尚無實質差異。在層合於工作面11前,所述第一擋牆膜20例如是預先形成於一乘載膜上,乘載膜在第一擋牆膜20層合於工作面11後被移除,所述承載膜可為聚乙烯對苯二甲酸酯(PET)或其他聚酯薄膜、聚醯亞胺薄膜、聚醯胺醯亞胺薄膜、聚丙烯薄膜、聚苯乙烯薄膜。在可能的實施方式中,第一擋牆膜20為黑色而可吸收大部分的光線。Next, please refer to FIG. 2, a laminating machine is used to laminate a light-curable
如第3圖所示,將一第一光罩30形成於第一擋牆膜20上,第一光罩30覆蓋第一非擋牆區22但裸露第一擋牆區21。As shown in FIG. 3, a
如第4圖所示,對第一擋牆膜20照光,使第一擋牆區21的高分子交聯固化;第一非擋牆區22因為被第一光罩30覆蓋,因此未進行光固化反應。As shown in FIG. 4, the first
如第5圖所示,固化完成後,移除第一光罩30。As shown in FIG. 5, after curing is completed, the
接著,如第6圖所示,在第一擋牆膜20進行蝕刻前,再利用層合機將一光可固化的第二擋牆膜40層合於第一擋牆膜20上。與第一擋牆膜20相似,第二擋牆膜40同樣具有一第二擋牆區41及一第二非擋牆區42,第二擋牆區41位於第一擋牆區21上,且第二擋牆區41的橫截面積不大於第一擋牆區21,亦即,第二擋牆區41的輪廓相當於或小於第一擋牆區21。相似地,在層合於第二擋牆膜20前,所述第二擋牆膜40也例如是預先形成於一乘載膜上,乘載膜在第二擋牆膜40層合於第一擋牆膜20後被移除,所述承載膜可為聚乙烯對苯二甲酸酯(PET)或其他聚酯薄膜、聚醯亞胺薄膜、聚醯胺醯亞胺薄膜、聚丙烯薄膜、聚苯乙烯薄膜。在可能的實施方式中,第二擋牆膜40同樣為黑色而可吸收大部分的光線。Next, as shown in FIG. 6, before the first
如第7圖所示,將一第二光罩50形成於第二擋牆膜40上,第二光罩50覆蓋第二非擋牆區42但裸露第二擋牆區41。As shown in FIG. 7, a
如第8圖所示,對第二擋牆膜40照光,使第二擋牆區41的高分子交聯固化;第二非擋牆區42因為被第二光罩50覆蓋,因此未進行光固化反應。As shown in FIG. 8, the second
如第9圖所示,固化完成後,移除第二光罩50。As shown in FIG. 9, after curing is completed, the
接著,如第10圖所示,利用蝕刻液將未被固化的第一、第二非擋牆區移除,保留被固化的第一、第二擋牆區21、41,留下來的第一、第二擋牆區21、41分別作為第一、第二擋牆層20A、40A,第一擋牆層20A圍構一第一開窗601,第二擋牆層40A圍構一第二開窗602,第一、第二開窗601、602的組合為一個可裸露工作面11的開窗60。本實施例中,第二擋牆層40A的橫截面積小於第一擋牆層20A,且第二開窗602的輪廓大於第一開窗601,這樣的漸擴型開窗有助於機械手臂作業。Next, as shown in FIG. 10, the uncured first and second non-retaining wall regions are removed using an etching solution, and the cured first and second
接著,如第11圖所示,在開窗60內的工作面11上形成光電單元70,光電單元70的數量可視需求而定,且光電單元70為發光單元及感光單元其中一者,且第一、第二擋牆層20A、40A的組合所形成的擋牆高於光電單元70,而用以阻擋光線。光電單元70可與基板10上的電路結構或電接點形成電性連接,所述電性連接例如是通過打線接合(wire bonding)實現;在光電單元為覆晶LED的場合或其他適當的情形中,可以省略打線接合步驟。發光單元例如為LED,感光單元例如為CCD或CMOS,發光單元用以發射光線,感光單元用以感測光線,所述光線可為可見光或不可見光,例如紅外線。Next, as shown in FIG. 11, a
接著,如第12圖所示,於開窗60內點膠,所點的膠體80為可透光膠體,例如透明膠或螢光膠,用以保護所述光電單元70及/或用以發出預選波長的光線,亦即,所製得的光學擋牆結構具有一基板10、一具有第一開窗601的第一擋牆層20A、一具有第二開窗602的第二擋牆層40A、一形成於工作面11上且位於開窗60內的光電單元70、以及一形成於開窗60內的膠體80。Next, as shown in FIG. 12, the glue is dispensed in the
需說明的是,前述實施例僅以兩層擋牆層為例進行說明,在本新型其他可能的實施方式中,也可以通過類似的多次光固化一次蝕刻方法形成更多層的擋牆層,例如在第13圖所示的實施例中,所製得的光學擋牆結構具有一基板10、一具有第一開窗601的第一擋牆層20A、一具有第二開窗602的第二擋牆層40A、一具有第三開窗603的第三擋牆層90A、一形成於工作面11上且位於開窗60內的光電單元70、以及一形成於開窗60內的膠體80。It should be noted that the foregoing embodiment only takes two barrier walls as an example for description. In other possible implementation manners of the present invention, more barrier walls may be formed by a similar multiple photocuring and one etching method For example, in the embodiment shown in FIG. 13, the obtained optical barrier structure has a
綜合上述,本新型通過多次光固化一次蝕刻的設計,能夠使多層擋牆層具有不同的輪廓及厚度,也能提升擋牆層的整體厚度,避免因為擋牆層太厚而無法一次光固化的問題,並能大幅提高設計自由度。In summary, through the design of multiple photo-curing and one-etching, the present invention can make the multi-layer retaining wall layer have different contours and thicknesses, and can also increase the overall thickness of the retaining wall layer, so as to avoid one-time photo-curing because the retaining wall layer is too thick Problems, and can greatly improve the design freedom.
10‧‧‧基板10‧‧‧ substrate
11‧‧‧工作面11‧‧‧Working surface
20‧‧‧第一擋牆膜20‧‧‧The first retaining wall film
20A‧‧‧第一擋牆層20A‧‧‧The first retaining wall
21‧‧‧第一擋牆區21‧‧‧The first retaining wall area
22‧‧‧第一非擋牆區22‧‧‧The first non-retaining wall area
30‧‧‧第一光罩30‧‧‧ First Mask
40‧‧‧第二擋牆膜40‧‧‧Second retaining wall film
40A‧‧‧第二擋牆層40A‧‧‧Second retaining wall
41‧‧‧第二擋牆區41‧‧‧Second retaining wall area
42‧‧‧第二非擋牆區42‧‧‧Second non-retaining wall area
50‧‧‧第二光罩50‧‧‧Second mask
60‧‧‧開窗60‧‧‧open window
601‧‧‧第一開窗601‧‧‧The first window
602‧‧‧第二開窗602‧‧‧The second window
603‧‧‧第三開窗603‧‧‧The third window
70‧‧‧光電單元70‧‧‧Photoelectric unit
80‧‧‧膠體80‧‧‧Colloid
90A‧‧‧第三擋牆層90A‧‧‧third retaining wall
第1至12圖為本新型第一實施例的製作方法示意圖。1 to 12 are schematic diagrams of the manufacturing method of the first embodiment of the present invention.
第13圖為本新型光學擋牆結構的另一實施例。Fig. 13 is another embodiment of the novel optical retaining wall structure.
10‧‧‧基板 10‧‧‧ substrate
11‧‧‧工作面 11‧‧‧Working surface
20A‧‧‧第一擋牆層 20A‧‧‧The first retaining wall
40A‧‧‧第二擋牆層 40A‧‧‧Second retaining wall
60‧‧‧開窗 60‧‧‧open window
601‧‧‧第一開窗 601‧‧‧The first window
602‧‧‧第二開窗 602‧‧‧The second window
70‧‧‧光電單元 70‧‧‧Photoelectric unit
80‧‧‧膠體 80‧‧‧Colloid
Claims (2)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW108207624U TWM590214U (en) | 2019-06-14 | 2019-06-14 | Optical retaining wall structure |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW108207624U TWM590214U (en) | 2019-06-14 | 2019-06-14 | Optical retaining wall structure |
Publications (1)
Publication Number | Publication Date |
---|---|
TWM590214U true TWM590214U (en) | 2020-02-01 |
Family
ID=70413943
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW108207624U TWM590214U (en) | 2019-06-14 | 2019-06-14 | Optical retaining wall structure |
Country Status (1)
Country | Link |
---|---|
TW (1) | TWM590214U (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113526449A (en) * | 2020-04-14 | 2021-10-22 | 鹰克国际股份有限公司 | Chip packaging structure and manufacturing method thereof |
-
2019
- 2019-06-14 TW TW108207624U patent/TWM590214U/en unknown
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113526449A (en) * | 2020-04-14 | 2021-10-22 | 鹰克国际股份有限公司 | Chip packaging structure and manufacturing method thereof |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI556422B (en) | Image module package and manufacturing method thereof | |
TWI735562B (en) | Thin optoelectronic modules with apertures and their manufacture | |
US20100181578A1 (en) | Package structure | |
TWI684268B (en) | Sensor module and method of manufacturing the same | |
US10749055B2 (en) | Production of sensors | |
TW201428982A (en) | Optical sensor, optoelectronics devices and packaging method thereof | |
TW201505135A (en) | Packaging structure of optical module | |
TWM590214U (en) | Optical retaining wall structure | |
TWI668877B (en) | Production method for a photoelectric mechanism having a blocking wall | |
TWI699568B (en) | Method for forming optical wall by multiple photocuring | |
TW202127604A (en) | Semiconductor device package and method for manufacturing the same | |
TWM588205U (en) | Optical retaining wall structure | |
CN111180346B (en) | Method for manufacturing photoelectric mechanism with retaining wall | |
CN112216599A (en) | Method for forming optical retaining wall by multiple photocuring and one-time etching and optical retaining wall structure | |
TWI784175B (en) | Method for forming optical wall by laser engraving an opening and optical wall structure | |
CN209963020U (en) | Optical retaining wall structure | |
JP2012113180A5 (en) | ||
CN112106207A (en) | Optoelectronic module and wafer-level method for producing an optoelectronic module | |
CN209963083U (en) | Optical retaining wall structure | |
JP2010045108A (en) | Optical semiconductor device and manufacturing method thereof | |
CN112133807A (en) | Method for forming optical retaining wall by laser windowing and optical retaining wall structure | |
JP2009152447A (en) | Optical coupler, and manufacturing method thereof | |
TW201834224A (en) | Optical sensor | |
TWI634648B (en) | Method for manufacturing optical sensor | |
TWI841515B (en) | Semiconductor device package and method for manufacturing the same |