TWI782155B - Epoxy resin composition for encapsulation of semiconductor device and semiconductor device encapsulated using the same - Google Patents
Epoxy resin composition for encapsulation of semiconductor device and semiconductor device encapsulated using the same Download PDFInfo
- Publication number
- TWI782155B TWI782155B TW107144606A TW107144606A TWI782155B TW I782155 B TWI782155 B TW I782155B TW 107144606 A TW107144606 A TW 107144606A TW 107144606 A TW107144606 A TW 107144606A TW I782155 B TWI782155 B TW I782155B
- Authority
- TW
- Taiwan
- Prior art keywords
- epoxy resin
- weight
- resin composition
- semiconductor device
- average particle
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/02—Elements
- C08K3/04—Carbon
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/18—Oxygen-containing compounds, e.g. metal carbonyls
- C08K3/20—Oxides; Hydroxides
- C08K3/22—Oxides; Hydroxides of metals
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/28—Nitrogen-containing compounds
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/38—Boron-containing compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/293—Organic, e.g. plastic
- H01L23/295—Organic, e.g. plastic containing a filler
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/18—Oxygen-containing compounds, e.g. metal carbonyls
- C08K3/20—Oxides; Hydroxides
- C08K3/22—Oxides; Hydroxides of metals
- C08K2003/2227—Oxides; Hydroxides of metals of aluminium
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/28—Nitrogen-containing compounds
- C08K2003/282—Binary compounds of nitrogen with aluminium
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/38—Boron-containing compounds
- C08K2003/382—Boron-containing compounds and nitrogen
- C08K2003/385—Binary compounds of nitrogen with boron
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K2201/00—Specific properties of additives
- C08K2201/011—Nanostructured additives
Abstract
Description
本發明是有關於一種用於包封半導體裝置的環氧樹脂組成物及一種使用其包封的半導體裝置。更具體而言，本發明是有關於一種具有高熱導率以確保良好的散熱的用於包封半導體裝置的環氧樹脂組成物及一種使用其包封的半導體裝置。The invention relates to an epoxy resin composition for encapsulating a semiconductor device and a semiconductor device encapsulated by it. More specifically, the present invention relates to an epoxy resin composition for encapsulating semiconductor devices with high thermal conductivity to ensure good heat dissipation and a semiconductor device encapsulated therewith.
隨著對應於積體電路的積體密度提高之晶片尺寸的增大，現有的表面安裝封裝已逐漸替換為薄型扁平封裝，例如雙列直插式封裝（dual in-line package，DIP）、小輪廓封裝（small outline package，SOP）、小輪廓J形引線封裝（small outline J-lead package，SOJ封裝）、塑膠帶引線晶片載體（plastic leaded chip carrier，PLCC），特別是方形扁平封裝（quad-flat package，QFP）。當前，更多積體封裝（例如球柵陣列（ball grid array，BGA）、晶片級封裝（chip size package，CSP）、覆晶（flip chip，FC）、大規模積體電路（Large Scale Integrated circuit，LSI）封裝等）在此項技術中備受關注。當前積體電路（integrated circuit，IC）不僅需要減小封裝大小對晶片大小的比率，且亦需要高的輸出，以提供更快的操作速度或更高的接面溫度（junction temperature）。此類要求可進一步增大裝置故障率。一般而言，儘管使用額外的散熱材料、散熱塊（heat-slug）或散熱器（heat spreader）來滿足此類要求，然而需要額外的用於系統改變的成本。具有高散熱能力的熱增強型模製化合物（thermally enhanced mold compound，TEMC）是滿足此類要求的有用的替代物。With the increase of the chip size corresponding to the increase of the bulk density of the integrated circuit, the existing surface mount package has been gradually replaced by a thin flat package, such as a dual in-line package (dual in-line package, DIP), a small Outline package (small outline package, SOP), small outline J-lead package (small outline J-lead package, SOJ package), plastic tape lead chip carrier (plastic led chip carrier, PLCC), especially square flat package (quad- flat package, QFP). Currently, more integrated packages (such as ball grid array (BGA), chip size package (CSP), flip chip (FC), large scale integrated circuit (Large Scale Integrated circuit) , LSI) packaging, etc.) have attracted much attention in this technology. The current integrated circuit (IC) not only needs to reduce the ratio of package size to chip size, but also needs high output to provide faster operation speed or higher junction temperature. Such requirements can further increase device failure rates. In general, although additional heat dissipation materials, heat-slugs or heat spreaders are used to meet such requirements, additional costs for system changes are required. Thermally enhanced mold compounds (TEMCs) with high heat dissipation capabilities are useful alternatives to meet such requirements.
本發明的目的是提供一種具有高熱導率以確保良好的散熱的用於包封半導體裝置的環氧樹脂組成物。An object of the present invention is to provide an epoxy resin composition for encapsulating semiconductor devices having high thermal conductivity to ensure good heat dissipation.
本發明的另一目的是提供一種使用如上所述用於包封半導體裝置的環氧樹脂組成物包封的半導體裝置。Another object of the present invention is to provide a semiconductor device encapsulated using the epoxy resin composition for encapsulating a semiconductor device as described above.
根據本發明的一個態樣，一種用於包封半導體裝置的環氧樹脂組成物包含：環氧樹脂；固化劑；填料；及固化加速劑，其中填料包括金剛石奈米顆粒與氧化鋁、硝酸鋁及硝酸硼中的至少一者的混合物，且金剛石奈米顆粒可具有1奈米至100奈米的平均粒徑（D50）。According to an aspect of the present invention, an epoxy resin composition for encapsulating a semiconductor device comprises: an epoxy resin; a curing agent; a filler; and a curing accelerator, wherein the filler includes diamond nanoparticles and aluminum oxide, aluminum nitrate and boron nitrate, and the diamond nanoparticles may have an average particle diameter (D50) of 1 nm to 100 nm.
在一個實施例中，在環氧樹脂組成物中，可存在0.01重量%（wt%）至5重量%的量的金剛石奈米顆粒。In one embodiment, diamond nanoparticles may be present in an amount of 0.01 weight percent (wt %) to 5 wt % in the epoxy resin composition.
在一個實施例中，氧化鋁、硝酸鋁及硝酸硼中的至少一者可具有較金剛石奈米顆粒大的平均粒徑（D50）。In one embodiment, at least one of alumina, aluminum nitrate, and boron nitrate may have a larger average particle size (D50) than diamond nanoparticles.
在一個實施例中，氧化鋁可具有1微米至10微米的平均粒徑（D50），硝酸鋁可具有1微米至10微米的平均粒徑（D50），且硝酸硼可具有5微米至20微米的平均粒徑（D50）。In one embodiment, alumina can have an average particle size (D50) of 1 micron to 10 microns, aluminum nitrate can have an average particle size (D50) of 1 micron to 10 microns, and boron nitrate can have a mean particle size (D50) of 5 microns to 20 microns The average particle size (D50).
在一個實施例中，在環氧樹脂組成物中，可存在50重量%至95重量%的量的氧化鋁、硝酸鋁及硝酸硼中的至少一者。In one embodiment, at least one of aluminum oxide, aluminum nitrate and boron nitrate may be present in an amount of 50% to 95% by weight in the epoxy resin composition.
在一個實施例中，環氧樹脂組成物可包含0.5重量%至20重量%的環氧樹脂、0.1重量%至13重量%的固化劑、70重量%至95重量%的填料以及0.01重量%至2重量%的固化加速劑。In one embodiment, the epoxy resin composition may comprise 0.5% by weight to 20% by weight of epoxy resin, 0.1% by weight to 13% by weight of curing agent, 70% by weight to 95% by weight of filler, and 0.01% by weight to 2% by weight of curing accelerator.
根據本發明的另一態樣，提供一種由如上所述的環氧樹脂組成物包封的半導體裝置。According to another aspect of the present invention, a semiconductor device encapsulated by the above-mentioned epoxy resin composition is provided.
以下將詳細闡述本發明的實施例。本文中將省略可能不必要地使本發明的標的模糊不清的已知功能及構造的說明。Embodiments of the present invention will be described in detail below. Descriptions of known functions and constructions that may unnecessarily obscure the subject matter of the present invention will be omitted herein.
此外，藉由考量本發明的功能而對本文中所使用的用語進行定義，且所述用語可根據使用者或操作者的習慣或意圖而變化。因此，應根據本文中所述的整體揭露內容而對所述用語進行定義。用於包封半導體裝置的環氧樹脂組成物 In addition, the terms used herein are defined by considering the functions of the present invention, and the terms may be changed according to user's or operator's habit or intention. Accordingly, such terms should be defined in light of the overall disclosure set forth herein. Epoxy resin composition for encapsulating semiconductor devices
本發明的一個態樣是有關於一種用於包封半導體裝置的環氧樹脂組成物。One aspect of the present invention relates to an epoxy resin composition for encapsulating semiconductor devices.
為了將高熱導率賦予用於包封半導體裝置的環氧樹脂組成物，需要相對大量的填料。然而，使用大量填料會增加環氧樹脂組成物的黏性同時降低其可流動性，因而造成封裝的可模製性問題。另外，由於包含於環氧模製產品中的樹脂具有為0.2 W/m∙K的低熱導率，因此包含所述樹脂的混合物很難具有為6 W/m∙K或大於6 W/m∙K的高熱導率。In order to impart high thermal conductivity to epoxy resin compositions for encapsulating semiconductor devices, a relatively large amount of filler is required. However, using a large amount of fillers increases the viscosity of the epoxy resin composition while reducing its flowability, thus causing moldability problems for packaging. In addition, since the resin contained in the epoxy molded product has a low thermal conductivity of 0.2 W/m∙K, it is difficult for the mixture containing the resin to have a thermal conductivity of 6 W/m∙K or more. K's high thermal conductivity.
藉由開發能夠顯著增大熱導率以確保高的散熱並具有良好的可流動性以減少熱膨脹及水分吸收的用於包封半導體裝置的環氧樹脂組成物的各種研究，本發明的發明人發現了可使用平均粒徑（D50）為1奈米至100奈米的金剛石奈米顆粒與氧化鋁、硝酸鋁及硝酸硼中的至少一者的混合物作為填料來達成以上目的，並且完成了本發明。Through various studies to develop an epoxy resin composition for encapsulating semiconductor devices capable of significantly increasing thermal conductivity to ensure high heat dissipation and having good flowability to reduce thermal expansion and moisture absorption, the inventors of the present invention It has been found that a mixture of diamond nanoparticles with an average particle size (D50) of 1 nm to 100 nm and at least one of aluminum oxide, aluminum nitrate and boron nitrate can be used as a filler to achieve the above purpose, and this paper has been completed invention.
根據本發明的環氧樹脂組成物包含環氧樹脂、固化劑、填料及固化加速劑，其中所述填料包括金剛石奈米顆粒與氧化鋁、硝酸鋁及硝酸硼中的至少一者的混合物，且所述金剛石奈米顆粒可具有1奈米至100奈米的平均粒徑（D50）。本文中，「平均粒徑（D50）」意指以顆粒的直徑計在以重量單位分佈的顆粒中50重量%的顆粒的粒徑，且可藉由熟習此項技術者已知的典型方法來量測。環氧樹脂組成物可具有6 W/m∙K或大於6 W/m∙K、較佳地6W/m∙K至20W/m∙K的熱導率。The epoxy resin composition according to the present invention comprises an epoxy resin, a curing agent, a filler and a curing accelerator, wherein the filler comprises a mixture of diamond nanoparticles and at least one of alumina, aluminum nitrate and boron nitrate, and The diamond nanoparticles may have an average particle diameter (D50) of 1 nm to 100 nm. Herein, "average particle diameter (D50)" means the particle diameter of 50% by weight of particles among particles distributed in units of weight in terms of the diameter of the particles, and can be determined by a typical method known to those skilled in the art. Measure. The epoxy resin composition may have a thermal conductivity of 6 W/m∙K or greater than 6 W/m∙K, preferably 6 W/m∙K to 20 W/m∙K.
接下來，將詳細地闡述根據本發明的環氧樹脂組成物的組分。環氧樹脂 Next, the components of the epoxy resin composition according to the present invention will be explained in detail. epoxy resin
根據本發明，環氧樹脂可選自用於包封半導體裝置的任何環氧樹脂，而不限於特定環氧樹脂。具體而言，環氧樹脂可為具有二或更多個環氧基的環氧化合物。環氧樹脂的實例可包括藉由對酚或烷基酚與羥基苯甲醛的縮合物進行環氧化而獲得的環氧樹脂、酚芳烷基型環氧樹脂、酚酚醛清漆型環氧樹脂、甲酚酚醛清漆型環氧樹脂、多官能環氧樹脂、萘酚酚醛清漆型環氧樹脂、雙酚A/雙酚F/雙酚AD的酚醛清漆型環氧樹脂、雙酚A/雙酚F/雙酚AD的縮水甘油醚、雙羥基聯苯環氧樹脂、二環戊二烯環氧樹脂、聯苯型環氧樹脂等。更具體而言，環氧樹脂可包括聯苯型環氧樹脂、酚芳烷基型環氧樹脂、甲酚酚醛清漆型環氧樹脂及多官能環氧樹脂中的至少一者。較佳地，環氧樹脂包括聯苯型環氧樹脂及酚芳烷基型環氧樹脂中的至少一者。According to the present invention, the epoxy resin may be selected from any epoxy resin used for encapsulating semiconductor devices, without being limited to a specific epoxy resin. Specifically, the epoxy resin may be an epoxy compound having two or more epoxy groups. Examples of epoxy resins may include epoxy resins obtained by epoxidizing condensates of phenol or alkylphenols with hydroxybenzaldehyde, phenol aralkyl type epoxy resins, phenol novolak type epoxy resins, formaldehyde Phenol novolac epoxy resin, multifunctional epoxy resin, naphthol novolac epoxy resin, bisphenol A/bisphenol F/bisphenol AD novolac epoxy resin, bisphenol A/bisphenol F/ Glycidyl ether of bisphenol AD, bishydroxy biphenyl epoxy resin, dicyclopentadiene epoxy resin, biphenyl epoxy resin, etc. More specifically, the epoxy resin may include at least one of a biphenyl type epoxy resin, a phenol aralkyl type epoxy resin, a cresol novolac type epoxy resin, and a multifunctional epoxy resin. Preferably, the epoxy resin includes at least one of biphenyl type epoxy resin and phenol aralkyl type epoxy resin.
具體而言，聯苯型環氧樹脂可由式1表示，但並非僅限於此。
＜式1＞
慮及環氧樹脂組成物的可固化性，環氧樹脂可具有100克/當量至500克/當量的環氧當量重量。在此範圍內，環氧樹脂可提高環氧樹脂組成物的固化程度。In consideration of curability of the epoxy resin composition, the epoxy resin may have an epoxy equivalent weight of 100 g/eq to 500 g/eq. Within this range, the epoxy resin can increase the curing degree of the epoxy resin composition.
環氧樹脂可單獨使用或以其混合物形式使用。可使用藉由使環氧樹脂與其他組分（例如固化劑、固化加速劑、脫模劑、偶合劑、應力消除劑等）預反應而獲得的加成物，例如熔融母料。Epoxy resins may be used alone or in mixtures thereof. Adducts obtained by pre-reacting epoxy resins with other components such as curing agents, curing accelerators, release agents, coupling agents, stress relievers, etc., such as molten masterbatches, can be used.
在一個實施例中，在用於包封半導體裝置的環氧樹脂組成物中，可存在0.5重量%至20重量%、具體而言3重量%至15重量%的量的環氧樹脂。在此範圍內，環氧樹脂組成物不會遭遇可固化性劣化。舉例而言，可存在0.5重量%、0.6重量%、0.7重量%、0.8重量%、0.9重量%、1重量%、1.5重量%、2重量%、3重量%、4重量%、5重量%、6重量%、7重量%、8重量%、9重量%、10重量%、11重量%、12重量%、13重量%、14重量%、15重量%、16重量%、17重量%、18重量%、19重量%或20重量%的量的環氧樹脂。固化劑 In one embodiment, the epoxy resin may be present in an amount of 0.5 wt % to 20 wt %, specifically 3 wt % to 15 wt %, in the epoxy resin composition for encapsulating a semiconductor device. Within this range, the epoxy resin composition does not suffer from deterioration in curability. For example, 0.5% by weight, 0.6% by weight, 0.7% by weight, 0.8% by weight, 0.9% by weight, 1% by weight, 1.5% by weight, 2% by weight, 3% by weight, 4% by weight, 5% by weight, 6% by weight, 7% by weight, 8% by weight, 9% by weight, 10% by weight, 11% by weight, 12% by weight, 13% by weight, 14% by weight, 15% by weight, 16% by weight, 17% by weight, 18% by weight %, 19% by weight or 20% by weight of epoxy resin. Hardener
固化劑可選自用於包封半導體裝置的任何典型固化劑，而不限於特定固化劑。具體而言，固化劑可為酚類固化劑。舉例而言，酚類固化劑可包括以下中的至少一者：酚芳烷基型酚樹脂、酚酚醛清漆型酚樹脂、多官能酚樹脂、新酚（Xylok）型酚樹脂、甲酚酚醛清漆型酚樹脂、萘酚型酚樹脂、萜烯型酚樹脂、二環戊二烯酚樹脂、自雙酚A及可溶酚醛樹脂（resoles）合成的酚醛清漆型酚樹脂以及多元酚化合物（例如三(羥基苯基)甲烷及二羥基聯苯）。較佳地，酚類固化劑可包括酚芳烷基型酚樹脂、酚酚醛清漆型酚樹脂及多官能酚樹脂中的至少一者，更佳為酚芳烷基型酚樹脂與新酚型酚樹脂的混合物。The curing agent may be selected from any typical curing agents used for encapsulating semiconductor devices without being limited to a specific curing agent. Specifically, the curing agent may be a phenolic curing agent. For example, the phenolic curing agent may include at least one of the following: phenol aralkyl type phenol resin, phenol novolak type phenol resin, multifunctional phenol resin, neophenol (Xylok) type phenol resin, cresol novolac Type phenol resins, naphthol type phenol resins, terpene type phenol resins, dicyclopentadienyl phenol resins, novolac type phenol resins synthesized from bisphenol A and resoles, and polyphenolic compounds (such as three (hydroxyphenyl)methane and dihydroxybiphenyl). Preferably, the phenolic curing agent can include at least one of phenol aralkyl type phenol resin, phenol novolac type phenol resin and multifunctional phenol resin, more preferably phenol aralkyl type phenol resin and new phenol type phenol A mixture of resins.
具體而言，酚芳烷基型環氧樹脂可由式2表示，但並非僅限於此：
＜式2＞
具體而言，新酚型酚樹脂可由式3表示，但並非僅限於此：
＜式3＞
慮及可固化性，固化劑可具有90克/當量至250克/當量的羥基當量重量。在此範圍內，固化劑可提高固化程度。In consideration of curability, the curing agent may have a hydroxyl equivalent weight of 90 g/eq to 250 g/eq. Within this range, the curing agent can increase the degree of curing.
該些固化劑可單獨使用或以其組合形式使用。另外，固化劑可以藉由使以上固化劑與其他組分（例如環氧樹脂、固化加速劑、脫模劑及應力消除劑）預反應而獲得的加成物（例如熔融母料）的形式使用。These curing agents may be used alone or in combination thereof. In addition, the curing agent can be used in the form of an adduct (such as a molten masterbatch) obtained by pre-reacting the above curing agent with other components such as epoxy resin, curing accelerator, mold release agent, and stress reliever .
在環氧樹脂組成物中，可存在約0.1重量%至約13重量%、較佳地約0.1重量%至約10重量%的量的固化劑。在此範圍內，環氧樹脂組成物不會遭遇可固化性劣化。舉例而言，可存在0.1重量%、0.2重量%、0.3重量%、0.4重量%、0.5重量%、0.6重量%、0.7重量%、0.8重量%、0.9重量%、1重量%、1.5重量%、2重量%、3重量%、4重量%、5重量%、6重量%、7重量%、8重量%、9重量%、10重量%、11重量%、12重量%或13重量%的量的固化劑。In the epoxy resin composition, the curing agent may be present in an amount of about 0.1% to about 13% by weight, preferably about 0.1% to about 10% by weight. Within this range, the epoxy resin composition does not suffer from deterioration in curability. For example, 0.1 wt%, 0.2 wt%, 0.3 wt%, 0.4 wt%, 0.5 wt%, 0.6 wt%, 0.7 wt%, 0.8 wt%, 0.9 wt%, 1 wt%, 1.5 wt%, 2% by weight, 3% by weight, 4% by weight, 5% by weight, 6% by weight, 7% by weight, 8% by weight, 9% by weight, 10% by weight, 11% by weight, 12% by weight or 13% by weight Hardener.
可根據半導體裝置封裝的機械性質及防潮可靠性來調整環氧樹脂對固化劑的混合比率。舉例而言，環氧樹脂對固化劑的化學當量比可介於0.95至3、具體而言1至2、更具體而言1至1.75範圍內。在此範圍內，環氧樹脂組成物可表現出良好的後固化強度。填料 The mixing ratio of the epoxy resin to the curing agent can be adjusted according to the mechanical properties and moisture-proof reliability of the semiconductor device package. For example, the stoichiometric ratio of epoxy resin to curing agent may range from 0.95 to 3, specifically 1 to 2, more specifically 1 to 1.75. Within this range, the epoxy resin composition can exhibit good post-curing strength. filler
填料適於在減輕施加至環氧樹脂組成物的應力的同時提高其機械強度。另外，根據本發明的填料可藉由熱導率的顯著增加來改善散熱，且可在減少環氧樹脂組成物的熱膨脹及水分吸收的同時確保其高的可流動性。The filler is suitable for increasing the mechanical strength of the epoxy resin composition while relieving stress applied to it. In addition, the filler according to the present invention can improve heat dissipation by significantly increasing thermal conductivity, and can ensure high flowability of the epoxy resin composition while reducing thermal expansion and moisture absorption.
根據本發明，填料可包括金剛石奈米顆粒與氧化鋁顆粒、硝酸鋁顆粒及硝酸硼顆粒中的至少一者的混合物。金剛石奈米顆粒可具有1奈米至100奈米的平均粒徑（D50）。According to the present invention, the filler may include a mixture of diamond nanoparticles and at least one of alumina particles, aluminum nitrate particles, and boron nitrate particles. Diamond nanoparticles may have an average particle size (D50) of 1 nm to 100 nm.
金剛石具有約1,000 W/m∙K的熱導率。另外，氧化鋁、硝酸鋁及硝酸硼具有約25 W/m∙K的熱導率。在平均粒徑的以上範圍內，金剛石奈米顆粒可填充由氧化鋁顆粒、硝酸鋁顆粒及硝酸硼顆粒中的至少一者形成的空位，或者可設置在氧化鋁顆粒、硝酸鋁顆粒或硝酸硼顆粒之間。在根據本發明的環氧樹脂組成物中，相較於平均粒徑（D50）大於100奈米且不填充空位的金剛石奈米顆粒而言，所述金剛石奈米顆粒可藉由熱導率的顯著增加來改善散熱，且可在減少環氧樹脂組成物的熱膨脹及水分吸收的同時確保其高的可流動性。較佳地，金剛石奈米顆粒具有10奈米至80奈米的平均粒徑（D50）。Diamond has a thermal conductivity of about 1,000 W/m∙K. In addition, aluminum oxide, aluminum nitrate, and boron nitrate have a thermal conductivity of about 25 W/m∙K. Within the above range of the average particle size, the diamond nanoparticles can fill the vacancies formed by at least one of the alumina particles, the aluminum nitrate particles and the boron nitrate particles, or can be arranged on the alumina particles, the aluminum nitrate particles or the boron nitrate particles between particles. In the epoxy resin composition according to the present invention, compared to diamond nanoparticles with an average particle diameter (D50) larger than 100 nm and not filling vacancies, the diamond nanoparticles can be improved by thermal conductivity. Significantly increased to improve heat dissipation, and can ensure high fluidity while reducing thermal expansion and moisture absorption of epoxy resin composition. Preferably, the diamond nanoparticles have an average particle diameter (D50) of 10 nm to 80 nm.
氧化鋁顆粒、硝酸鋁顆粒及硝酸硼顆粒中的至少一者可具有較金剛石奈米顆粒大的平均粒徑（D50）。藉由此結構，氧化鋁顆粒、硝酸鋁顆粒及硝酸硼顆粒中的至少一者之間形成空位，且平均粒徑（D50）處於以上範圍內的金剛石奈米顆粒可填充所述空位。氧化鋁顆粒可具有1微米至10微米、較佳地5微米至6微米的平均粒徑（D50）。硝酸鋁顆粒可具有1微米至10微米、較佳地1微米至5微米的平均粒徑（D50）。硝酸硼顆粒可具有5微米至20微米、較佳地10微米至15微米的平均粒徑（D50）。在平均粒徑的該些範圍內，環氧樹脂組成物可確保可流動性、熱導率及比介電常數（specific dielectric constant）方面的良好性質。氧化鋁顆粒、硝酸鋁顆粒及硝酸硼顆粒中的至少一者可視需要被預先塗佈以偶合劑、環氧樹脂或固化劑。At least one of the alumina particles, the aluminum nitrate particles, and the boron nitrate particles may have a larger average particle diameter (D50) than the diamond nanoparticles. With this structure, vacancies are formed among at least one of the alumina particles, aluminum nitrate particles, and boron nitrate particles, and the diamond nanoparticles having an average particle diameter (D50) within the above range can fill the vacancies. The alumina particles may have an average particle size (D50) of 1 micron to 10 microns, preferably 5 microns to 6 microns. The aluminum nitrate particles may have an average particle size (D50) of 1 micron to 10 microns, preferably 1 micron to 5 microns. The boron nitrate particles may have an average particle size (D50) of 5 microns to 20 microns, preferably 10 microns to 15 microns. Within these ranges of the average particle diameter, the epoxy resin composition can secure good properties in flowability, thermal conductivity, and specific dielectric constant. At least one of the alumina particles, aluminum nitrate particles and boron nitrate particles may be pre-coated with coupling agent, epoxy resin or curing agent as required.
金剛石奈米顆粒可具有球形狀或非球形狀，但並非僅限於此。在環氧樹脂組成物中，可存在0.01重量%至5重量%、較佳地0.1重量%至3重量%的量的金剛石奈米顆粒。在此範圍內，金剛石奈米顆粒可在防止環氧樹脂組成物的可流動性劣化的同時提高其熱導率。舉例而言，可存在0.01重量%、0.02重量%、0.05重量%、0.1重量%、0.2重量%、0.3重量%、0.4重量%、0.5重量%、0.6重量%、0.7重量%、0.8重量%、0.9重量%、1重量%、2重量%、3重量%、4重量%或5重量%的量的金剛石奈米顆粒。Diamond nanoparticles may have spherical or non-spherical shapes, but are not limited thereto. In the epoxy resin composition, diamond nanoparticles may be present in an amount of 0.01% to 5% by weight, preferably 0.1% to 3% by weight. Within this range, the diamond nanoparticles can improve thermal conductivity of the epoxy resin composition while preventing deterioration of flowability thereof. For example, 0.01 wt%, 0.02 wt%, 0.05 wt%, 0.1 wt%, 0.2 wt%, 0.3 wt%, 0.4 wt%, 0.5 wt%, 0.6 wt%, 0.7 wt%, 0.8 wt%, Diamond nanoparticles in an amount of 0.9%, 1%, 2%, 3%, 4%, or 5% by weight.
氧化鋁顆粒、硝酸鋁顆粒及硝酸硼顆粒可具有球形狀或非球形狀，但並非僅限於此。球形顆粒可提高環氧樹脂組成物的可流動性。在環氧樹脂組成物中，可存在50重量%至95重量%、較佳地75重量%至90重量%的量的氧化鋁顆粒、硝酸鋁顆粒及硝酸硼顆粒中的至少一者。在此範圍內，氧化鋁顆粒、硝酸鋁顆粒或硝酸硼顆粒可在防止環氧樹脂組成物的可流動性劣化的同時提高其熱導率。The alumina particles, aluminum nitrate particles, and boron nitrate particles may have spherical or non-spherical shapes, but are not limited thereto. Spherical particles can improve the flowability of the epoxy resin composition. In the epoxy resin composition, at least one of alumina particles, aluminum nitrate particles and boron nitrate particles may exist in an amount of 50% to 95% by weight, preferably 75% to 90% by weight. Within this range, the alumina particles, aluminum nitrate particles, or boron nitrate particles may improve thermal conductivity of the epoxy resin composition while preventing deterioration of flowability thereof.
在環氧樹脂組成物中，填料的量可依據環氧樹脂組成物的目標性質（包括可模製性、低應力及高溫強度）來改變。具體而言，在環氧樹脂組成物中，可存在70重量%至95重量%、例如75重量%至94重量%的量的填料。在此範圍內，填料可確保環氧樹脂組成物在可流動性、可靠性、比介電常數及熱導率方面的目標性質。舉例而言，可存在70重量%、71重量%、72重量%、73重量%、74重量%、75重量%、76重量%、77重量%、78重量%、79重量%、80重量%、81重量%、82重量%、83重量%、84重量%、85重量%、86重量%、87重量%、88重量%、89重量%、90重量%、91重量%、92重量%、93重量%、94重量%或95重量%的量的填料。固化加速劑 In the epoxy resin composition, the amount of filler can be varied according to the target properties of the epoxy resin composition, including moldability, low stress and high temperature strength. Specifically, in the epoxy resin composition, the filler may be present in an amount of 70% to 95% by weight, such as 75% to 94% by weight. Within this range, the filler can secure target properties of the epoxy resin composition in terms of flowability, reliability, specific permittivity, and thermal conductivity. For example, 70 wt%, 71 wt%, 72 wt%, 73 wt%, 74 wt%, 75 wt%, 76 wt%, 77 wt%, 78 wt%, 79 wt%, 80 wt%, 81% by weight, 82% by weight, 83% by weight, 84% by weight, 85% by weight, 86% by weight, 87% by weight, 88% by weight, 89% by weight, 90% by weight, 91% by weight, 92% by weight, 93% by weight %, 94% by weight or 95% by weight of filler. curing accelerator
固化加速劑促進環氧樹脂與固化劑之間的反應。固化加速劑的實例可包括三級胺、有機金屬化合物、有機磷化合物、咪唑化合物及硼化合物。The curing accelerator accelerates the reaction between the epoxy resin and the curing agent. Examples of curing accelerators may include tertiary amines, organometallic compounds, organophosphorus compounds, imidazole compounds, and boron compounds.
三級胺的實例可包括苯甲基二甲胺、三乙醇胺、三乙二胺、二乙胺基乙醇、三(二甲胺基甲基)酚、2,2-(二甲胺基甲基)酚、2,4,6-三(二胺基甲基)酚、三-2-乙基己酸的鹽等，但並非僅限於此。有機金屬化合物的實例可包括乙醯丙酮酸鉻、乙醯丙酮酸鋅、乙醯丙酮酸鎳等，但並非僅限於此。有機磷化合物的實例可包括三-4-甲氧基膦、四丁基溴化鏻、四苯基溴化鏻、苯基膦、二苯基膦、三苯基膦、三苯基膦三苯基硼烷、三苯基膦-1,4-苯醌加成物等，但並非僅限於此。咪唑化合物的實例可包括2-苯基-4-甲基咪唑（2-phenyl-4-methylidazole）、2-甲基咪唑、2-苯基咪唑、2-胺基咪唑、2-甲基-1-乙烯基咪唑、2-乙基-4-甲基咪唑、2-十七基咪唑等，但並非僅限於此。硼化合物的實例可包括四苯基鏻四苯基硼酸鹽、三苯基膦四苯基硼酸鹽、四苯基硼酸鹽、三氟硼烷-正己胺、三氟硼烷單乙胺、四氟硼烷三乙胺、四氟硼烷胺等，但並非僅限於此。作為另一選擇，可使用1,5-二氮雜雙環[4.3.0]壬-5-烯（1,5-diazabicyclo[4.3.0]non-5-ene，DBN）、1,8-二氮雜雙環[5.4.0]十一-7-烯（1,8-diazabicyclo[5.4.0]undec-7-ene，DBU）及酚酚醛樹脂鹽，但並非僅限於此。Examples of tertiary amines may include benzyldimethylamine, triethanolamine, triethylenediamine, diethylaminoethanol, tris(dimethylaminomethyl)phenol, 2,2-(dimethylaminomethyl) ) phenol, 2,4,6-tris(diaminomethyl)phenol, salts of tris-2-ethylhexanoic acid, etc., but are not limited thereto. Examples of the organometallic compound may include, but are not limited to, chromium acetylacetonate, zinc acetylacetonate, nickel acetylacetonate, and the like. Examples of organophosphorus compounds may include tri-4-methoxyphosphine, tetrabutylphosphonium bromide, tetraphenylphosphonium bromide, phenylphosphine, diphenylphosphine, triphenylphosphine, triphenylphosphine triphenyl Borane, triphenylphosphine-1,4-benzoquinone adduct, etc., but not limited thereto. Examples of imidazole compounds may include 2-phenyl-4-methylidazole (2-phenyl-4-methylidazole), 2-methylimidazole, 2-phenylimidazole, 2-aminoimidazole, 2-methyl-1 - Vinylimidazole, 2-ethyl-4-methylimidazole, 2-heptadecylimidazole, etc., but not limited thereto. Examples of boron compounds may include tetraphenylphosphonium tetraphenyl borate, triphenylphosphine tetraphenyl borate, tetraphenyl borate, trifluoroborane-n-hexylamine, trifluoroborane monoethylamine, tetrafluoroborane Borane triethylamine, tetrafluoroborane amine, etc., but not limited thereto. Alternatively, 1,5-diazabicyclo[4.3.0]non-5-ene (1,5-diazabicyclo[4.3.0]non-5-ene, DBN), 1,8-bis Azabicyclo[5.4.0]undec-7-ene (1,8-diazabicyclo[5.4.0]undec-7-ene, DBU) and phenolic novolac resin salts, but not limited thereto.
另外，作為固化加速劑，亦可使用藉由使環氧樹脂及/或固化劑預反應而獲得的加成物。In addition, as a curing accelerator, an adduct obtained by pre-reacting an epoxy resin and/or a curing agent can also be used.
在環氧樹脂組成物中，可存在0.01重量%至2重量%、具體而言0.02重量%至1.5重量%的量的固化加速劑。在此範圍內，固化加速劑可在確保環氧樹脂組成物的良好可固化性的同時促進其固化。舉例而言，可存在0.01重量%、0.05重量%、0.1重量%、0.2重量%、0.3重量%、0.4重量%、0.5重量%、0.6重量%、0.7重量%、0.8重量%、0.9重量%、1重量%、1.5重量%或2重量%的量的固化加速劑。In the epoxy resin composition, the curing accelerator may be present in an amount of 0.01% to 2% by weight, specifically 0.02% to 1.5% by weight. Within this range, the curing accelerator can accelerate curing of the epoxy resin composition while ensuring good curability thereof. For example, 0.01 wt%, 0.05 wt%, 0.1 wt%, 0.2 wt%, 0.3 wt%, 0.4 wt%, 0.5 wt%, 0.6 wt%, 0.7 wt%, 0.8 wt%, 0.9 wt%, Curing accelerator in an amount of 1%, 1.5% or 2% by weight.
根據本發明的環氧樹脂組成物可更包含偶合劑、脫模劑及著色劑中的至少一者。偶合劑 The epoxy resin composition according to the present invention may further include at least one of a coupling agent, a release agent and a colorant. Coupler
偶合劑適於藉由環氧樹脂與填料之間的反應來提高界面強度，且可例如為矽烷偶合劑。矽烷偶合劑不受特別限制，只要矽烷偶合劑可與環氧樹脂及填料反應以增強環氧樹脂與填料之間的界面的強度即可。偶合劑的實例可包括環氧基矽烷、胺基矽烷、脲基矽烷、巰基矽烷及烷基矽烷。該些偶合劑可單獨使用或以其組合形式使用。The coupling agent is suitable for improving the interfacial strength through the reaction between the epoxy resin and the filler, and can be, for example, a silane coupling agent. The silane coupling agent is not particularly limited as long as the silane coupling agent can react with the epoxy resin and the filler to enhance the strength of the interface between the epoxy resin and the filler. Examples of coupling agents may include epoxysilanes, aminosilanes, ureidosilanes, mercaptosilanes, and alkylsilanes. These coupling agents may be used alone or in combination thereof.
在環氧樹脂組成物中，可存在約0.01重量%至約5重量%、較佳地約0.05重量%至約3重量%的量的偶合劑。在此範圍內，環氧樹脂組成物可具有提高的後固化強度。舉例而言，可存在0.01重量%、0.05重量%、0.1重量%、0.2重量%、0.3重量%、0.4重量%、0.5重量%、0.6重量%、0.7重量%、0.8重量%、0.9重量%、1重量%、1.5重量%、2重量%、3重量%、4重量%或5重量%的量的偶合劑。脫模劑 In the epoxy resin composition, the coupling agent may be present in an amount of about 0.01% to about 5% by weight, preferably about 0.05% to about 3% by weight. Within this range, the epoxy resin composition may have improved post-curing strength. For example, 0.01 wt%, 0.05 wt%, 0.1 wt%, 0.2 wt%, 0.3 wt%, 0.4 wt%, 0.5 wt%, 0.6 wt%, 0.7 wt%, 0.8 wt%, 0.9 wt%, 1% by weight, 1.5% by weight, 2% by weight, 3% by weight, 4% by weight or 5% by weight of the coupling agent. Release agent
脫模劑可包括選自由以下組成的群組中的至少一者：石蠟、酯蠟、高級脂肪酸、高級脂肪酸金屬鹽、天然脂肪酸以及天然脂肪酸金屬鹽。The release agent may include at least one selected from the group consisting of paraffin wax, ester wax, higher fatty acid, higher fatty acid metal salt, natural fatty acid, and natural fatty acid metal salt.
在環氧樹脂組成物中，可存在0.1重量%至1重量%的量的脫模劑。舉例而言，可存在0.1重量%、0.2重量%、0.3重量%、0.4重量%、0.5重量%、0.6重量%、0.7重量%、0.8重量%、0.9重量%或1重量%的量的脫模劑。著色劑 In the epoxy resin composition, the release agent may be present in an amount of 0.1% to 1% by weight. For example, there may be an amount of 0.1 wt%, 0.2 wt%, 0.3 wt%, 0.4 wt%, 0.5 wt%, 0.6 wt%, 0.7 wt%, 0.8 wt%, 0.9 wt% or 1 wt% of the release agent. Colorant
著色劑可用於對半導體裝置的包封體進行雷射標記，且可選自此項技術中習知的任何著色劑。舉例而言，著色劑可包括碳黑、氮化鈦、鈦黑、磷酸氫氧化二銅（dicopper hydroxide phosphate）、氧化鐵及雲母中的至少一者。Colorants may be used to laser mark semiconductor device encapsulations and may be selected from any colorants known in the art. For example, the colorant may include at least one of carbon black, titanium nitride, titanium black, dicopper hydroxide phosphate, iron oxide, and mica.
在環氧樹脂組成物中，可存在0.01重量%至5重量%、較佳地0.05重量%至3重量%的量的著色劑。舉例而言，可存在0.01重量%、0.05重量%、0.1重量%、0.2重量%、0.3重量%、0.4重量%、0.5重量%、0.6重量%、0.7重量%、0.8重量%、0.9重量%、1重量%、2重量%、3重量%、4重量%或5重量%的量的著色劑。In the epoxy resin composition, the colorant may be present in an amount of 0.01% to 5% by weight, preferably 0.05% to 3% by weight. For example, 0.01 wt%, 0.05 wt%, 0.1 wt%, 0.2 wt%, 0.3 wt%, 0.4 wt%, 0.5 wt%, 0.6 wt%, 0.7 wt%, 0.8 wt%, 0.9 wt%, Colorant in an amount of 1%, 2%, 3%, 4%, or 5% by weight.
另外，根據本發明的環氧樹脂組成物可視需要更包含抗氧化劑（例如四[亞甲基-3-(3,5-二-三級丁基-4-羥基苯基)丙酸酯]甲烷）及阻燃劑（例如氫氧化鋁），而不影響本發明的目的。In addition, the epoxy resin composition according to the present invention may further include an antioxidant (such as tetrakis [methylene-3-(3,5-di-tertiary butyl-4-hydroxyphenyl) propionate] methane ) and flame retardants (such as aluminum hydroxide), without affecting the purpose of the present invention.
可藉由以下方法來製備環氧樹脂組成物：在所述方法中，使用亨舍爾混合機（Henschel mixer）或羅迪格混合機（Lödige mixer）對預定量的上述組分進行均勻及充分地混合，然後冷卻並粉碎，隨後使用輥磨機或捏合機進行熔融捏合，藉此獲得最終粉末產品。The epoxy resin composition can be prepared by a method in which predetermined amounts of the above-mentioned components are uniformly and thoroughly mixed using a Henschel mixer or a Lödige mixer. and then cooled and pulverized, followed by melt-kneading using a roll mill or a kneader, whereby a final powder product is obtained.
根據本發明的環氧樹脂組成物可用於包封半導體裝置，特別是用於汽車的行動顯示器或指紋辨識感測器的半導體裝置。作為使用根據本發明的環氧樹脂組成物包封半導體裝置的方法，一般可使用低壓轉移模製。然而，應理解亦可採用注射成型或澆鑄來模製環氧樹脂組成物。使用用於包封半導體裝置的環氧樹脂組成物包封的半導體裝置 The epoxy resin composition according to the present invention can be used to encapsulate semiconductor devices, especially semiconductor devices used in mobile displays or fingerprint recognition sensors of automobiles. As a method of encapsulating a semiconductor device using the epoxy resin composition according to the present invention, low-pressure transfer molding can generally be used. However, it should be understood that injection molding or casting may also be used to mold the epoxy resin composition. Semiconductor device encapsulated using epoxy resin composition for encapsulating semiconductor device
本發明的另一態樣是有關於一種使用用於包封半導體裝置的環氧樹脂組成物包封的半導體裝置。半導體裝置可由根據本發明的用於包封半導體裝置的環氧樹脂組成物來包封。舉例而言，半導體裝置可包括用於電容型指紋辨識的半導體裝置。Another aspect of the present invention relates to a semiconductor device encapsulated with an epoxy resin composition for encapsulating a semiconductor device. A semiconductor device may be encapsulated by the epoxy resin composition for encapsulating a semiconductor device according to the present invention. For example, the semiconductor device may include a semiconductor device for capacitive fingerprint recognition.
接下來，將參照一些實例來更詳細地闡述本發明。應理解，提供該些實例僅是為了說明，且不應被視為以任何方式限制本發明。Next, the present invention will be explained in more detail with reference to some examples. It should be understood that these examples are provided for illustration only and should not be construed as limiting the invention in any way.
實例及比較實例中所使用的組分的詳細情況如下。環氧樹脂 1）聯苯型環氧樹脂：YX-4000H（日本環氧樹脂有限公司（Japan Epoxy Resin Inc.），環氧當量重量：196克/當量）固化劑 2）新酚型酚樹脂：KPH-F3065（科隆化學有限公司（Kolon Chemical Inc.），羥基當量重量：203克/當量） 3）酚芳烷基酚樹脂：MEH-7851（明和有限公司（Meiwa Inc.），羥基當量重量：203克/當量）填料 4）二氧化矽：以9:1的比率混合的平均粒徑（D50）為20微米的球形熔融二氧化矽與平均粒徑為0.5微米的球形熔融二氧化矽的混合物 5）氧化鋁：平均粒徑（D50）為5微米（DAB-05MS，日本電氣化學有限公司（Denka Denki Inc.）） 6）硝酸鋁：平均粒徑（D50）為3微米（ANF，丸和有限公司（Maruwa Inc.）） 7）硝酸硼：平均粒徑（D50）為12微米（MBN，三井高科技有限公司（Mitsui Hi-tech Inc.）） 8）金剛石奈米顆粒：平均粒徑（D50）為10奈米（綠色資源有限公司（Green Resource Inc.），奈米金剛石10N） 9）金剛石奈米顆粒：平均粒徑（D50）為1奈米（綠色資源有限公司，奈米金剛石1N） 10）金剛石奈米顆粒：平均粒徑（D50）為100奈米（綠色資源有限公司，奈米金剛石100N） 11）金剛石粉末：平均粒徑（D50）為100微米（綠色資源有限公司，奈米金剛石100M） 12）金剛石奈米顆粒：平均粒徑（D50）為150奈米（綠色資源有限公司，奈米金剛石150N）固化加速劑 13）三苯基膦固化加速劑：TPP-k（北興化學有限公司（Hokko Chemical Inc.））著色劑 14）碳黑：MA-600B（三菱化學有限公司（Mitsubishi Chemical Inc.））偶合劑 15）含胺基的三甲氧基矽烷：N-苯基-3-胺基丙基三甲氧基矽烷（KBM-573，信越化學有限公司（Shin-Etsu Chemical Inc.））實例及比較實例 Details of components used in Examples and Comparative Examples are as follows. Epoxy resin 1) Biphenyl type epoxy resin: YX-4000H (Japan Epoxy Resin Inc., epoxy equivalent weight: 196 g/equivalent) curing agent 2) New phenol type phenol resin: KPH-F3065 (Kolon Chemical Inc., hydroxyl equivalent weight: 203 g/equivalent) 3) Phenolic aralkylphenol resin: MEH-7851 (Meiwa Inc., hydroxyl equivalent weight: 203 g/eq) Filler 4) Silica: A mixture of spherical fused silica with an average particle size (D50) of 20 microns and spherical fused silica with an average particle size of 0.5 microns mixed in a ratio of 9:1 5) Alumina: Average particle size (D50) of 5 µm (DAB-05MS, Denka Denki Inc.) 6) Aluminum nitrate: Average particle size (D50) of 3 µm (ANF, Maruwa Limited Company (Maruwa Inc.)) 7) Boron nitrate: average particle size (D50) of 12 µm (MBN, Mitsui Hi-tech Inc.) 8) Diamond nanoparticles: average particle size (D50 ) of 10 nm (Green Resource Inc., Nanodiamond 10N) 9) Diamond nanoparticles: average particle size (D50) of 1 nm (Green Resource Inc., Nanodiamond 1N) 10) Diamond nanoparticles: the average particle size (D50) is 100 nanometers (Green Resources Co., Ltd., nanodiamond 100N) 11) Diamond powder: the average particle size (D50) is 100 microns (Green Resources Co., Ltd., nano Diamond 100M) 12) Diamond nanoparticles: average particle size (D50) of 150 nm (Green Resources Co., Ltd., nanodiamond 150N) curing accelerator 13) Triphenylphosphine curing accelerator: TPP-k (Beixing Chemical Co., Ltd. (Hokko Chemical Inc.)) Colorant 14) Carbon black: MA-600B (Mitsubishi Chemical Inc.) Coupling agent 15) Amino group-containing trimethoxysilane: N-phenyl-3 -Aminopropyltrimethoxysilane (KBM-573, Shin-Etsu Chemical Inc.) Examples and comparative examples
以表1所列量（單位：重量份）秤量了以上組分，且使用亨舍爾混合機（KSM-22，金松機械有限公司（Keum Sung Machinery Inc.））在25℃至30℃下均勻混合了30分鐘，以製備初級組成物。接著，使用連續捏合機在高達110℃的溫度下將初級組成物熔融捏合了30分鐘，然後冷卻至10℃至15℃並粉碎，藉此製備用於包封半導體裝置的環氧樹脂組成物。The above components were weighed in the amounts listed in Table 1 (unit: parts by weight), and uniformly mixed at 25°C to 30°C using a Henschel mixer (KSM-22, Keum Sung Machinery Inc.) Mixed for 30 minutes to prepare the primary composition. Next, the primary composition was melt-kneaded at a temperature up to 110° C. for 30 minutes using a continuous kneader, then cooled to 10° C. to 15° C. and pulverized, thereby preparing an epoxy resin composition for encapsulating a semiconductor device.
表1
針對以下性質藉由以下方法對在實例及比較實例中製備的所述環氧樹脂組成物的每一者進行了評價。結果示於表2中。性質評價 Each of the epoxy resin compositions prepared in Examples and Comparative Examples was evaluated for the following properties by the following methods. The results are shown in Table 2. property evaluation
（1）可流動性（單位：英吋，螺旋流）：使用低壓轉移壓模機在175℃的模製溫度下在70千克力/平方公分的壓力下將所述環氧樹脂組成物的每一者注入與EMMI-1-66對應的用於量測螺旋流的模具，然後量測流場（單位：英吋）。量測值越高則表明可流動性越佳。(1) Flowability (unit: inch, spiral flow): Each part of the epoxy resin composition was molded at a molding temperature of 175° C. under a pressure of 70 kgf/cm2 using a low-pressure transfer molding machine. One is injected into the mold for measuring spiral flow corresponding to EMMI-1-66, and then the flow field is measured (unit: inch). Higher measured values indicate better flowability.
（2）熱導率（單位：W/m∙K）：根據美國測試與材料協會（American Society for Testing and Materials，ASTM）D5470在25℃下在使用所述環氧樹脂組成物的每一者製備的樣本上量測了熱導率。(2) Thermal conductivity (unit: W/m∙K): According to American Society for Testing and Materials (ASTM) D5470 at 25° C. using each of the epoxy resin compositions Thermal conductivity was measured on the prepared samples.
表2
如表2所示，根據本發明的環氧樹脂組成物表現出良好的熱導率及可流動性。As shown in Table 2, the epoxy resin composition according to the present invention exhibits good thermal conductivity and flowability.
相反，不使用金剛石奈米顆粒製備的比較實例1的環氧樹脂組成物、使用金剛石奈米顆粒及二氧化矽而非氧化鋁、硝酸鋁及硝酸硼中的至少一者製備的比較實例3的環氧樹脂組成物以及使用平均粒徑不處於根據本發明的粒徑範圍內的金剛石奈米顆粒製備的比較實例2及比較實例4的環氧樹脂組成物表現出低的熱導率及差的可流動性。特別是，比較實例2的環氧樹脂組成物（其中金剛石粉末具有較氧化鋁顆粒、硝酸鋁顆粒或硝酸硼顆粒大得多的平均粒徑）具有較實例的環氧樹脂組成物差得多的可流動性。On the contrary, the epoxy resin composition of Comparative Example 1 prepared without diamond nanoparticles, the epoxy resin composition of Comparative Example 3 prepared with diamond nanoparticles and silicon dioxide instead of at least one of alumina, aluminum nitrate and boron nitrate The epoxy resin composition and the epoxy resin compositions of Comparative Example 2 and Comparative Example 4 prepared using diamond nanoparticles whose average particle diameter is not within the particle diameter range according to the present invention exhibited low thermal conductivity and poor thermal conductivity. Mobility. In particular, the epoxy resin composition of Comparative Example 2 (in which the diamond powder has an average particle diameter much larger than that of alumina particles, aluminum nitrate particles, or boron nitrate particles) has a much poorer performance than that of the epoxy resin composition of Example. Mobility.
應理解，在不背離本發明的精神及範圍的條件下熟習此項技術者可作出各種修改、改變、更改及等效實施例。It should be understood that various modifications, changes, alterations and equivalent embodiments can be made by those skilled in the art without departing from the spirit and scope of the present invention.
無none
無none
Claims (3)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| ??10-2017-0170794 | 2017-12-12 | ||
| KR1020170170794A KR102137550B1 (en) | 2017-12-12 | 2017-12-12 | Epoxy resin composition for encapsulating semiconductor device and semiconductor device encapsulated using the same |
| KR10-2017-0170794 | 2017-12-12 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201927898A TW201927898A (en) | 2019-07-16 |
| TWI782155B true TWI782155B (en) | 2022-11-01 |
Family
ID=66819378
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW107144606A TWI782155B (en) | 2017-12-12 | 2018-12-11 | Epoxy resin composition for encapsulation of semiconductor device and semiconductor device encapsulated using the same |
Country Status (4)
| Country | Link |
|---|---|
| KR (1) | KR102137550B1 (en) |
| CN (1) | CN111492009A (en) |
| TW (1) | TWI782155B (en) |
| WO (1) | WO2019117452A1 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102544119B1 (en) * | 2023-01-12 | 2023-06-14 | 동우 화인켐 주식회사 | Resin composition for encapsulating electronic device and electronic device fabricated using the same |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03244137A (en) * | 1990-02-22 | 1991-10-30 | Tomoegawa Paper Co Ltd | Adhesive tape for semiconductor package |
| JP2012077098A (en) * | 2010-09-10 | 2012-04-19 | Shin-Etsu Chemical Co Ltd | Overcoat material and semiconductor device using the same |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005223222A (en) * | 2004-02-06 | 2005-08-18 | Toyoda Gosei Co Ltd | Solid element package |
| TWI442595B (en) * | 2007-07-25 | 2014-06-21 | Everlight Electronics Co Ltd | Light emitting diode device |
| FI124314B (en) * | 2012-09-28 | 2014-06-30 | Carbodeon Ltd Oy | Nanodiamonds containing thermoplastic heat composite |
| CN106471035B (en) * | 2014-07-02 | 2019-04-16 | Dic株式会社 | Electronic material composition epoxy resin, its solidfied material and electronic component |
| KR101854501B1 (en) * | 2015-04-29 | 2018-05-04 | 삼성에스디아이 주식회사 | Composition for encapsulating semiconductor device and semiconductor device encapsulated by using the same |
-
2017
- 2017-12-12 KR KR1020170170794A patent/KR102137550B1/en active IP Right Grant
-
2018
- 2018-10-25 WO PCT/KR2018/012723 patent/WO2019117452A1/en active Application Filing
- 2018-10-25 CN CN201880080648.0A patent/CN111492009A/en active Pending
- 2018-12-11 TW TW107144606A patent/TWI782155B/en active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03244137A (en) * | 1990-02-22 | 1991-10-30 | Tomoegawa Paper Co Ltd | Adhesive tape for semiconductor package |
| JP2012077098A (en) * | 2010-09-10 | 2012-04-19 | Shin-Etsu Chemical Co Ltd | Overcoat material and semiconductor device using the same |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20190070200A (en) | 2019-06-20 |
| KR102137550B1 (en) | 2020-07-24 |
| WO2019117452A1 (en) | 2019-06-20 |
| CN111492009A (en) | 2020-08-04 |
| TW201927898A (en) | 2019-07-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI576968B (en) | Epoxy resin composition for semiconductor encapsulation and semiconductor device using the same | |
| CN107250235B (en) | Composition for packaging semiconductor device and semiconductor device packaged using the same | |
| KR19990083454A (en) | Epoxy Resin Composition for Sealing Semiconductor and Semiconductor Device | |
| JP2009275146A (en) | Epoxy resin composition for sealing semiconductor and semiconductor device using the same | |
| TWI782155B (en) | Epoxy resin composition for encapsulation of semiconductor device and semiconductor device encapsulated using the same | |
| TWI815937B (en) | Epoxy resin composition for encapsulation of semiconductor devices and semiconductor device | |
| CN108699423B (en) | Epoxy resin composition for sealing semiconductor device and semiconductor device sealed using the same | |
| WO2019054217A1 (en) | Epoxy resin composition and electronic component device | |
| JP2014031460A (en) | Epoxy resin composition for encapsulation and semiconductor device using the same | |
| KR102158875B1 (en) | Epoxy resin composition for encapsulating semiconductor device and semiconductor device encapsulated using the same | |
| JP2020122071A (en) | Sealing resin composition, electronic component device, and method for manufacturing same | |
| KR102319562B1 (en) | Epoxy resin composition for encapsulating semiconductor device and semiconductor device encapsulated using the same | |
| JP6249332B2 (en) | Semiconductor sealing resin composition and semiconductor device | |
| JP2012072209A (en) | Epoxy resin composition for sealing semiconductor, and semiconductor device using the same | |
| JP6351927B2 (en) | Resin composition for sealing and method for manufacturing semiconductor device | |
| JP2013234305A (en) | Epoxy resin composition for sealing semiconductor and semiconductor device | |
| TWI816185B (en) | Epoxy resin composition for encapsulating semiconductor device and semiconductor device | |
| TW201833233A (en) | Resin composition and electronic component device | |
| JP5102095B2 (en) | Semiconductor-encapsulated epoxy resin composition for compression molding and semiconductor device using the same | |
| JP5226387B2 (en) | Epoxy resin composition for semiconductor encapsulation and semiconductor device | |
| JP2017128657A (en) | Sealing epoxy resin composition, and semiconductor device and method for manufacturing the same | |
| KR20170079115A (en) | Epoxy Resin Composition for Sealing Semiconductor | |
| JP2004256729A (en) | Epoxy resin composition and sealed semiconductor device | |
| KR102549224B1 (en) | Epoxy Resin Composition for Sealing Semiconductor | |
| JP5592174B2 (en) | Epoxy resin composition for semiconductor encapsulation and semiconductor device using the same |