JP2014031460A - Epoxy resin composition for encapsulation and semiconductor device using the same - Google Patents
Epoxy resin composition for encapsulation and semiconductor device using the same Download PDFInfo
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Abstract
Description
本発明は、封止用エポキシ樹脂組成物及びそれを用いた半導体装置に関する。 The present invention relates to an epoxy resin composition for sealing and a semiconductor device using the same.
近年の電子機器の高性能化かつ軽薄短小化に伴い、電子機器内部に半導体装置が高密度実装されることにより、半導体装置のより効率的な放熱方法が種々検討されている。 2. Description of the Related Art In recent years, electronic devices have been improved in performance, lightness, and size, and various methods for more efficient heat dissipation of semiconductor devices have been studied by mounting semiconductor devices at high density inside electronic devices.
半導体装置の効率的な放熱のために、半導体装置の封止材に高熱電導特性を持たせるという手法がその一つである。 One method is to impart high thermal conductivity to the sealing material of the semiconductor device for efficient heat dissipation of the semiconductor device.
一方、半導体装置の形態としては、ピン挿入型から表面実装型が主流になってきており、さらに、ＣＳＰ（Chip Scale Package）やＢＧＡ（Ball Grid Array）といった表面実装型の半導体装置の中で、更なる高速化、多機能化を実現するためにフリップチップ、チップスタック等の実装方式で半導体素子が搭載されているものが開発されてきている。 On the other hand, as a form of the semiconductor device, a pin insertion type to a surface mounting type have become mainstream. Furthermore, among surface mounting type semiconductor devices such as a CSP (Chip Scale Package) and a BGA (Ball Grid Array), In order to realize further higher speed and more functions, a semiconductor device mounted with a flip chip, a chip stack, or the like has been developed.
フリップチップ型の半導体装置においては、半導体素子と基板の空隙部にエポキシ樹脂組成物を注入、充填して硬化させたのち、半導体素子を封止するのが一般的である。 In flip-chip type semiconductor devices, it is common to inject an epoxy resin composition into a gap between a semiconductor element and a substrate, fill and cure, and then seal the semiconductor element.
しかしながら、この方法では、空隙部へのエポキシ樹脂組成物の注入、充填に非常に長い時間を要することや、上記工程の後に半導体素子の封止工程が入るため、工数も増え、生産性の面で課題があった。 However, in this method, it takes a very long time to inject and fill the epoxy resin composition into the gap, and the semiconductor element sealing step is inserted after the above steps, which increases the number of steps and increases the productivity. There was a problem.
そこで、この点を改良するため、半導体素子と基板の空隙部と半導体素子自身の封止を、トランスファー成形により同時に行う半導体装置の製造方法並びに封止用樹脂組成物が提案されている（例えば、特許文献１を参照）。 Therefore, in order to improve this point, a semiconductor device manufacturing method and a sealing resin composition have been proposed in which the semiconductor element, the gap between the substrate and the semiconductor element itself are simultaneously sealed by transfer molding (for example, (See Patent Document 1).
しかしながら、半導体素子と基板の空隙部と半導体素子自身の封止を、トランスファー成形により同時に行う場合、バリ等の発生を抑制し、高熱伝導率特性と、半導体素子と基板の空隙部への充填性を満足させるのは困難であった。 However, when sealing the gap between the semiconductor element and the substrate and the semiconductor element at the same time by transfer molding, the generation of burrs, etc. is suppressed, high thermal conductivity characteristics, and fillability in the gap between the semiconductor element and the substrate It was difficult to satisfy.
本発明は以上の通りの事情に鑑みてなされたものであり、半導体素子と基板の空隙部と、半導体素子自体の封止をトランスファー成形により同時に行う封止方法に用いられる封止材であって、成形時のバリの発生を抑制し、高熱伝導率特性を有し、かつ空隙部の充填性に優れた封止用エポキシ樹脂組成物及びそれを用いた半導体装置を提供することを課題としている。 The present invention has been made in view of the circumstances as described above, and is a sealing material used in a sealing method for simultaneously sealing a gap between a semiconductor element and a substrate and the semiconductor element itself by transfer molding. An object of the present invention is to provide a sealing epoxy resin composition that suppresses the generation of burrs during molding, has high thermal conductivity characteristics, and is excellent in filling of voids, and a semiconductor device using the same. .
本発明は、上記の課題を解決するために、以下のことを特徴としている。 The present invention is characterized by the following in order to solve the above problems.
即ち、本発明の封止用エポキシ樹脂組成物は、フリップチップ実装を使用した半導体装置のトランスファー成形用の封止用エポキシ樹脂組成物であって、（Ａ）エポキシ樹脂、（Ｂ）硬化剤、（Ｃ）硬化助剤、（Ｄ）無機充填剤を必須成分とし、前記（Ｄ）無機充填剤が、樹脂組成物全体の７５〜９５質量％の範囲で含み、かつ、（Ｄ）の構成は、アルミナを６０Ｖｏｌ％以上含み、粒径３２μｍ以下の粒子を９９．９Ｖｏｌ％以上含み、粒径０．５μｍ以下の粒子を５Ｖｏｌ％以上含み、平均粒径が１〜１０μｍの範囲の粒度分布であることを特徴とする。 That is, the sealing epoxy resin composition of the present invention is a sealing epoxy resin composition for transfer molding of a semiconductor device using flip-chip mounting, and includes (A) an epoxy resin, (B) a curing agent, (C) a curing aid, (D) an inorganic filler as an essential component, the (D) inorganic filler is included in a range of 75 to 95% by mass of the entire resin composition, and the configuration of (D) is The particle size distribution includes alumina in an amount of 60 Vol% or more, particles having a particle size of 32 μm or less, particles of 99.9 Vol% or more, particles of particle size of 0.5 μm or less in an amount of 5 Vol% or more, and an average particle size of 1 to 10 μm It is characterized by that.
この封止用エポキシ樹脂組成物において、前記（Ｄ）無機充填剤が、粒径１０μｍ以下の粒子を７０Ｖｏｌ％以上含み、かつ、粒径０．１〜２．０μｍの粒子を１０Ｖｏｌ％以上含むことが好ましい。 In this sealing epoxy resin composition, the (D) inorganic filler contains 70 vol% or more of particles having a particle size of 10 μm or less, and 10 vol% or more of particles having a particle size of 0.1 to 2.0 μm. Is preferred.
また、本発明の半導体装置は、前記封止用エポキシ樹脂組成物を用いて成形したフリップチップ実装を使用したことを特徴とする。 Moreover, the semiconductor device of the present invention is characterized by using flip chip mounting molded using the sealing epoxy resin composition.
本発明の封止用エポキシ樹脂組成物によれば、半導体素子と基板の空隙部と、半導体素子自体の封止をトランスファー成形により同時に行う封止方法に用いられる封止材であって、成形時のバリの発生を抑制し、高熱伝導率特性を有し、かつ空隙部の充填性に優れた封止用エポキシ樹脂組成物及びそれを用いた半導体装置を提供することができる。 According to the sealing epoxy resin composition of the present invention is a sealing material used for a sealing method in which a semiconductor element and a gap between a substrate and a semiconductor element itself are sealed simultaneously by transfer molding. It is possible to provide an epoxy resin composition for sealing that suppresses the generation of burrs, has high thermal conductivity characteristics, and is excellent in filling of voids, and a semiconductor device using the same.
以下、本発明を詳細に説明する。 Hereinafter, the present invention will be described in detail.
本発明の封止用エポキシ樹脂組成物は、（Ａ）エポキシ樹脂、（Ｂ）硬化剤、（Ｃ）硬化助剤、（Ｄ）無機充填剤を必須成分とするものである。 The epoxy resin composition for sealing of the present invention comprises (A) an epoxy resin, (B) a curing agent, (C) a curing aid, and (D) an inorganic filler as essential components.
本発明で用いられる（Ａ）エポキシ樹脂は、１分子内に２官能基以上のエポキシ基を有するものであり、その具体例としては、以下のようなものが例示される。 The epoxy resin (A) used in the present invention has two or more functional epoxy groups in one molecule, and specific examples thereof include the following.
ビスフェノールＡ型エポキシ樹脂、ビスフェノールＦ型エポキシ樹脂、ビスフェノールＳ型エポキシ樹脂、ビフェニル骨格を有するビフェニル型エポキシ樹脂、ナフタレン環含有エポキシ樹脂、脂環式エポキシ樹脂、ジシクロペンタジエン骨格を有するジシクロペンタジエン型エポキシ樹脂、フェノールノボラック型エポキシ樹脂、クレゾールノボラック型エポキシ樹脂、トリフェニルメタン型エポキシ樹脂、ブロム含有エポキシ樹脂、脂肪族系エポキシ樹脂、トリグリシジルイソシアヌレート等。 Bisphenol A type epoxy resin, bisphenol F type epoxy resin, bisphenol S type epoxy resin, biphenyl type epoxy resin having biphenyl skeleton, naphthalene ring-containing epoxy resin, alicyclic epoxy resin, dicyclopentadiene type epoxy having dicyclopentadiene skeleton Resin, phenol novolac type epoxy resin, cresol novolac type epoxy resin, triphenylmethane type epoxy resin, bromine-containing epoxy resin, aliphatic epoxy resin, triglycidyl isocyanurate and the like.
これらは１種単独で用いてもよく、２種以上を併用してもよい。 These may be used alone or in combination of two or more.
本発明で用いられる（Ｂ）硬化剤は、通常エポキシ樹脂の硬化剤として用いられるものであれば特に制限なく用いることができ、その具体例としては、以下のようなものが例示される。 The (B) curing agent used in the present invention can be used without particular limitation as long as it is usually used as a curing agent for epoxy resins, and specific examples thereof include the following.
ジシアンジアミド、酸無水物、ノボラック型フェノール樹脂（フェノールノボラック、クレゾールノボラック、フェノールアラルキル等）、ナフトールアラルキル等、各種多価フェノール化合物、あるいはナフトール化合物等。 Dicyandiamide, acid anhydrides, novolak-type phenol resins (phenol novolak, cresol novolak, phenol aralkyl, etc.), naphthol aralkyl, and other polyhydric phenol compounds, or naphthol compounds.
これらは１種単独で用いてもよく、２種以上を併用してもよい。 These may be used alone or in combination of two or more.
硬化剤の配合量は、用いる硬化剤に応じて適宜設定することができ、通常、硬化剤のエポキシ樹脂に対する化学量論上の当量比（硬化剤当量／エポキシ基当量）が０．６〜１．４となる量であり、より好ましくは当量比が０．７５〜１．０となる量である。 The compounding quantity of a hardening | curing agent can be suitably set according to the hardening | curing agent to be used, and the stoichiometric equivalent ratio (hardening agent equivalent / epoxy group equivalent) with respect to the epoxy resin of a hardening | curing agent is 0.6-1 normally. .4, more preferably an amount with an equivalent ratio of 0.75 to 1.0.
当量比がこの範囲内であると、エポキシ樹脂に対する硬化剤の適正な配合量とすることができ、硬化不足、硬化物の耐熱性低下、硬化物の強度低下、硬化物の吸湿量の増加等を生じることがないため好ましい。 When the equivalence ratio is within this range, it is possible to obtain an appropriate blending amount of the curing agent for the epoxy resin, insufficient curing, reduced heat resistance of the cured product, reduced strength of the cured product, increased moisture absorption of the cured product, etc. This is preferable because it does not occur.
また、本発明で用いられる（Ｃ）硬化助剤としては、エポキシ基とフェノール性水酸基との反応を促進するものであれば特に制限されるものではなく、その具体例としては、以下のようなものが例示される。 In addition, the (C) curing aid used in the present invention is not particularly limited as long as it promotes the reaction between an epoxy group and a phenolic hydroxyl group. Specific examples thereof are as follows. Are illustrated.
テトラフェニルホスホニウム・テトラフェニルボレートやトリフェニルホスフィン（ＴＰＰ）等の有機ホスフィン類、ジアザビシクロウンデセン等の第三級アミン類、２−メチルイミダゾール、２−フェニル−４−メチルイミダゾール、２−フェニルイミダゾール、１−ベンジル−２−メチルイミダゾール等。 Organic phosphines such as tetraphenylphosphonium, tetraphenylborate and triphenylphosphine (TPP), tertiary amines such as diazabicycloundecene, 2-methylimidazole, 2-phenyl-4-methylimidazole, 2-phenyl Imidazole, 1-benzyl-2-methylimidazole and the like.
これらは１種単独で用いてもよく、２種以上を併用してもよい。 These may be used alone or in combination of two or more.
硬化助剤の配合量は、エポキシ樹脂組成物全量に対して０．１〜５０質量％、好ましくは０．２〜５質量％である。硬化助剤の配合量がこの範囲内であると、設定した加熱条件下で、適正な硬化を行うことができるため好ましい。 The compounding quantity of a hardening adjuvant is 0.1-50 mass% with respect to the epoxy resin composition whole quantity, Preferably it is 0.2-5 mass%. It is preferable for the blending amount of the curing aid to be within this range because proper curing can be performed under the set heating conditions.
本発明で用いられる（Ｄ）無機充填剤としては、通常、エポキシ樹脂組成物の無機充填剤として用いられるものであれば特に制限なく用いることができ、その具体例としては以下のようなものを例示することができる。 The (D) inorganic filler used in the present invention can be used without particular limitation as long as it is usually used as an inorganic filler of an epoxy resin composition. Specific examples thereof include the following. It can be illustrated.
溶融シリカ、結晶シリカ、微粉シリカ、アルミナ（例えば、球状アルミナ）、窒化珪素、マグネシア等。これら無機充填剤は１種単独で用いてもよく、２種以上を併用してもよい。 Fused silica, crystalline silica, finely divided silica, alumina (for example, spherical alumina), silicon nitride, magnesia and the like. These inorganic fillers may be used alone or in combination of two or more.
無機充填剤の配合量は、エポキシ樹脂組成物全量に対して７５〜９５質量％、好ましくは８５〜９３質量％の範囲である。 The compounding quantity of an inorganic filler is 75-95 mass% with respect to the epoxy resin composition whole quantity, Preferably it is the range of 85-93 mass%.
配合量がこの範囲内であると、高熱伝導率特性を有し、かつ空隙部の充填性に優れた封止用エポキシ樹脂組成物とすることができ、高信頼性の半導体装置とすることができる。 When the blending amount is within this range, it is possible to obtain a sealing epoxy resin composition having high thermal conductivity characteristics and excellent void filling properties, and a highly reliable semiconductor device. it can.
また、本発明で用いられる無機充填剤は、アルミナを体積比で６０Ｖｏｌ％以上含むものである。これよりも少ないと、熱伝導率が大きく低下する。 The inorganic filler used in the present invention contains alumina in a volume ratio of 60 Vol% or more. If it is less than this, the thermal conductivity is greatly reduced.
アルミナを体積比で上記の配合範囲とすることにより良好な熱伝導率とすることができる。 A favorable thermal conductivity can be obtained by making alumina into the above-mentioned blending range by volume ratio.
また、本発明で用いられる無機充填剤の粒径は以下に示す条件を満足するものである。
（１）粒径が３２μｍ以下の粒子を体積比で９９．９Ｖｏｌ％以上含む。
（２）粒径が０．５μｍ以下の粒子を体積比で５Ｖｏｌ％以上含む。
（３）平均粒径が１〜１０μｍの粒度分布を有する。
The particle size of the inorganic filler used in the present invention satisfies the following conditions.
(1) The particles having a particle size of 32 μm or less are contained in a volume ratio of 99.9 Vol% or more.
(2) The particles having a particle size of 0.5 μm or less are contained in a volume ratio of 5 Vol% or more.
(3) The particle size distribution has an average particle size of 1 to 10 μm.
無機充填剤の粒径が３２μｍ以下の粒子を体積比で９９．９Ｖｏｌ％以上含有させることにより、一般的なフリップチップのチップ下のギャップに対し優れた充填性を有する封止用エポキシ樹脂組成物とすることができる。 An epoxy resin composition for sealing having excellent filling properties for a gap under a chip of a general flip chip by containing particles having an inorganic filler particle size of 32 μm or less in a volume ratio of 99.9 Vol% or more. It can be.
また、無機充填剤の粒径が０．５μｍ以下の粒子を体積比で５Ｖｏｌ％以上含有させることにより、バリの発生を抑制することができる。 Moreover, generation | occurrence | production of a burr | flash can be suppressed by containing the particle | grains with a particle size of 0.5 micrometer or less of an inorganic filler 5 vol% or more by volume ratio.
また、平均粒径を１〜１０μｍの粒度分布とすることにより充填性を向上することができる。 Moreover, a fillability can be improved by making an average particle diameter into a particle size distribution of 1-10 micrometers.
さらに、本発明で用いられる無機充填剤では、以下に示す条件を満足するものが好ましい。
（４）粒径が１０μｍ以下の粒子を体積比で７０Ｖｏｌ％以上含む。
（５）粒径が０．１〜２．０μｍの粒子を１０Ｖｏｌ％以上含む。
Furthermore, the inorganic filler used in the present invention preferably satisfies the following conditions.
(4) Particles having a particle size of 10 μm or less are contained in a volume ratio of 70 Vol% or more.
(5) 10 vol% or more of particles having a particle size of 0.1 to 2.0 μm are included.
無機充填剤の粒径が１０μｍ以下の粒子を体積比で７０Ｖｏｌ％以上含有させることにより、さらに充填性を向上させることができる。 By containing particles having an inorganic filler particle size of 10 μm or less in a volume ratio of 70 Vol% or more, the filling property can be further improved.
また、無機充填剤の粒径が０．１〜２．０μｍ以下の粒子を体積比で１０Ｖｏｌ％以上含有させることにより、さらにバリの発生を抑制することができる。 Moreover, generation | occurrence | production of a burr | flash can be further suppressed by containing 10 vol% or more of particle | grains by which the particle size of an inorganic filler is 0.1-2.0 micrometers or less by volume ratio.
なお、上記の各粒径はレーザー回折散乱法等により測定することができる。 Each particle size can be measured by a laser diffraction scattering method or the like.
本発明の封止用エポキシ樹脂組成物には、本発明の効果を損なわない範囲内において、さらに他の成分を配合することができる。このような他の成分の具体例としては、カーボンブラック等の顔料、離型剤、カップリング剤等を挙げることができる。 The sealing epoxy resin composition of the present invention can further contain other components within a range not impairing the effects of the present invention. Specific examples of such other components include pigments such as carbon black, release agents, coupling agents and the like.
離型剤としては、例えば、カルナバワックス、ステアリン酸、モンタン酸、カルボキシル基含有ポリオレフィン等を用いることができる。 As a mold release agent, for example, carnauba wax, stearic acid, montanic acid, carboxyl group-containing polyolefin, or the like can be used.
カップリング剤としては、例えば、γ−グリシドキシプロピルトリメトキシシラン、γ−メルカプトプロピルトリメトキシシラン等を用いることができる。 As the coupling agent, for example, γ-glycidoxypropyltrimethoxysilane, γ-mercaptopropyltrimethoxysilane and the like can be used.
本発明の封止用エポキシ樹脂組成物を製造する際には、前記のエポキシ樹脂、硬化剤、硬化助剤、無機充填剤、及び必要に応じて他の成分を配合する。 When manufacturing the epoxy resin composition for sealing of this invention, the said epoxy resin, a hardening | curing agent, a hardening adjuvant, an inorganic filler, and another component as needed are mix | blended.
そして、ミキサー、ブレンダー等を用いて十分均一になるまで混合した後、熱ロールやニーダー等の混練機により加熱状態で溶融混練する。これを室温に冷却した後、公知の手段により粉砕することにより封止用エポキシ樹脂組成物を製造することができる。 And it mixes until it becomes uniform enough using a mixer, a blender, etc., Then, it melt-kneads in a heating state with kneading machines, such as a hot roll and a kneader. After cooling this to room temperature, the epoxy resin composition for sealing can be produced by pulverizing by a known means.
なお、封止用エポキシ樹脂組成物は、取り扱いを容易にするために、成形条件に合うような寸法と質量を有するタブレットとしてもよい。 Note that the epoxy resin composition for sealing may be a tablet having a size and a mass suitable for molding conditions in order to facilitate handling.
本発明の半導体装置は、前記のようにして得られた封止用エポキシ樹脂組成物を用いて、ＩＣチップ、ＬＳＩチップ等の半導体素子と基板の空隙部と半導体素子自身の封止を、トランスファー成形により同時に行うことができる。 The semiconductor device of the present invention uses the sealing epoxy resin composition obtained as described above to transfer a semiconductor element such as an IC chip or an LSI chip, a gap in the substrate, and the sealing of the semiconductor element itself. It can be performed simultaneously by molding.
トランスファー成形の条件としては、例えば、金型温度１７０〜１８０℃、成形時間３０〜３００秒に設定することができるが、金型温度、成形時間およびその他の成形条件は、封止用エポキシ樹脂組成物の配合組成等に応じて適宜に変更すればよい。 As conditions for transfer molding, for example, a mold temperature of 170 to 180 ° C. and a molding time of 30 to 300 seconds can be set. However, the mold temperature, molding time and other molding conditions are determined by the epoxy resin composition for sealing. What is necessary is just to change suitably according to the compounding composition etc. of a thing.
このような本発明の半導体装置によれば、バリがなく、高熱伝導率特性を有し、かつ空隙部の未充填ボイドのない半導体装置とすることができる。 According to such a semiconductor device of the present invention, it is possible to obtain a semiconductor device having no burr, high thermal conductivity, and no void filling in the void.
以下に、実施例により本発明をさらに詳しく説明するが、本発明はこれらの実施例に何ら限定されるものではない。 EXAMPLES Hereinafter, the present invention will be described in more detail with reference to examples. However, the present invention is not limited to these examples.
表１に示す配合成分として、以下のものを用いた。なお、表１に示す以下の配合成分の配合量は質量％を表す。 As the blending components shown in Table 1, the following were used. In addition, the compounding quantity of the following compounding components shown in Table 1 represents the mass%.
（エポキシ樹脂）
ビフェニル型エポキシ樹脂：三菱化学（株）、ＹＸ４０００Ｈ
（硬化剤）
フェノールノボラック樹脂：明和化成（株）、ＤＬ−９２
（硬化助剤）
ホスフィン系化合物：北興化学（株）、ＴＰＰ−Ｋ
(Epoxy resin)
Biphenyl type epoxy resin: Mitsubishi Chemical Corporation, YX4000H
(Curing agent)
Phenol novolac resin: Meiwa Kasei Co., Ltd., DL-92
(Curing aid)
Phosphine compounds: Hokuko Chemical Co., Ltd., TPP-K
（無機充填剤）
３２ミクロン以上の粗粒を除去した球状アルミナ
球状アルミナ以外の無機充填剤：球状溶融シリカ
(Inorganic filler)
Spherical alumina from which coarse particles of 32 microns or more have been removed Inorganic filler other than spherical alumina: spherical fused silica
（離型剤）
ワックス：大日化学工業（株）、Ｆ１−１００
（着色剤）
カーボンブラック：三菱化学（株）、ＭＡ−６００
（カップリング剤）
γ−グリシドキシプロピルトリエトキシシラン
(Release agent)
Wax: Dainichi Chemical Co., Ltd., F1-100
(Coloring agent)
Carbon black: Mitsubishi Chemical Corporation, MA-600
(Coupling agent)
γ-glycidoxypropyltriethoxysilane
表１に示す各配合成分を、表１に示す割合で配合し、ミキサーで均一に混合した後、ニーダーで溶融混練し、その後冷却固化し、次いで粉砕機で所定粒度に粉砕して粒状の封止用エポキシ樹脂組成物を得た。 Each compounding component shown in Table 1 is blended in the proportions shown in Table 1, mixed uniformly with a mixer, then melt-kneaded with a kneader, then cooled and solidified, and then pulverized to a predetermined particle size with a pulverizer and sealed in a granular form. An epoxy resin composition for stopping was obtained.
この封止用エポキシ樹脂組成物を用いて、基板に半導体素子をフリップチップ実装した状態で、次の条件にてトランスファー成形を行った。 Using this sealing epoxy resin composition, transfer molding was performed under the following conditions in a state where a semiconductor element was flip-chip mounted on a substrate.
金型温度：１７５℃
注入圧力：７０ｋｇｆ／ｃｍ2
成形時間：２００秒
後硬化：１７５℃／６ｈ
Mold temperature: 175 ° C
Injection pressure: 70 kgf / cm 2
Molding time: 200 seconds after curing: 175 ° C / 6h
上記の条件にて作成した半導体装置について次の測定及び評価を行った。 The following measurements and evaluations were performed on the semiconductor device created under the above conditions.
[チップ下充填性]
作成した成形品のチップ下の充填状態をＳＡＴにて観察し、未充填ボイドのあるものをＮＧとして評価した。
[Fillability under the chip]
The state of filling of the prepared molded product under the chip was observed by SAT, and an unfilled void was evaluated as NG.
[熱伝導率]
前記のトランスファー成形と同様の成形条件にて封止用エポキシ樹脂組成物を成形して１００φ×２５ｍｍｔのテストピースを作製し、プローブ法により熱伝導率を測定した。
上記の測定及び評価の結果を表１に示す。
[Thermal conductivity]
A sealing epoxy resin composition was molded under the same molding conditions as in the above transfer molding to prepare a test piece of 100φ × 25 mmt, and the thermal conductivity was measured by a probe method.
The results of the above measurement and evaluation are shown in Table 1.
[バリフロー]
前記のトランスファー成形と同様の成形条件にて、幅５ｍｍ、深さ１０ミクロンのスリット加工を施した金型を用いて封止材料を成形し、スリットに樹脂が浸入した距離（ｍｍ）を測定した。
[Variflow]
Under the same molding conditions as in the transfer molding described above, a sealing material was molded using a mold having a slit process with a width of 5 mm and a depth of 10 microns, and the distance (mm) at which the resin entered the slit was measured. .
表１より、実施例１は、無機充填剤におけるアルミナの割合、粒径０．５μｍ以下の割合及び０．１〜２．０μｍの割合が本発明の規定範囲にない比較例１、２に比べてチップ下充填性及びバリフローの結果が優れていた。 From Table 1, Example 1 is compared with Comparative Examples 1 and 2 in which the proportion of alumina in the inorganic filler, the proportion of particle size of 0.5 μm or less, and the proportion of 0.1 to 2.0 μm are not within the specified range of the present invention. As a result, the underfillability and the burr flow were excellent.
また、無機充填剤の平均粒径、粒径３２μｍの割合、粒径１０μｍ以下の割合、粒径１０μｍ以下の割合、粒径０．５μｍ以下の割合が本発明の範囲にない比較例３は、実施例１に比べて、熱伝導率及びバリフローの結果は優れていたが、チップ下充填性の結果は最も劣っていた。 Comparative Example 3 in which the average particle diameter of the inorganic filler, the ratio of the particle diameter of 32 μm, the ratio of the particle diameter of 10 μm or less, the ratio of the particle diameter of 10 μm or less, and the ratio of the particle diameter of 0.5 μm or less is not within the scope of the present invention. Compared with Example 1, the results of thermal conductivity and variflow were excellent, but the results of under-chip filling properties were the worst.
これらのことから、本発明の封止用エポキシ樹脂組成物は、成形時のバリの発生を抑制し、空隙部の充填性に優れ、かつ高熱伝導率特性をバランスよく備えた封止用エポキシ樹脂組成物であることが確認された。
From these, the epoxy resin composition for sealing of the present invention suppresses the generation of burrs during molding, is excellent in filling of voids, and has a high thermal conductivity property in a well-balanced manner. It was confirmed to be a composition.
Claims (3)
（Ａ）エポキシ樹脂、（Ｂ）硬化剤、（Ｃ）硬化助剤、（Ｄ）無機充填剤を必須成分とし、
前記（Ｄ）無機充填剤が、樹脂組成物全体の７５〜９５質量％の範囲で含み、
かつ、（Ｄ）の構成は、アルミナを６０Ｖｏｌ％以上含み、
粒径３２μｍ以下の粒子を９９．９Ｖｏｌ％以上含み、
粒径０．５μｍ以下の粒子を５Ｖｏｌ％以上含み、
平均粒径が１〜１０μｍの範囲の粒度分布であることを特徴とする封止用エポキシ樹脂組成物。 An epoxy resin composition for sealing for transfer molding of a semiconductor device using flip chip mounting,
(A) Epoxy resin, (B) curing agent, (C) curing aid, (D) inorganic filler as essential components,
The (D) inorganic filler comprises in the range of 75 to 95% by mass of the entire resin composition,
And the structure of (D) contains 60 Vol% or more of alumina,
Containing 99.9 Vol% or more of particles having a particle size of 32 μm or less,
Including 5 vol% or more of particles having a particle size of 0.5 μm or less,
An epoxy resin composition for sealing, wherein the average particle size is a particle size distribution in the range of 1 to 10 μm.
4. A semiconductor device using a flip chip mounting formed by using the sealing epoxy resin composition according to claim 1.
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| CN113105720A (en) * | 2021-03-29 | 2021-07-13 | 湖南创瑾技术研究院有限公司 | Packaging molding compound and preparation method and application thereof |
| JPWO2020175669A1 (en) * | 2019-02-28 | 2021-12-23 | 昭和電工マテリアルズ株式会社 | Encapsulation composition and semiconductor device |
| CN111566163B (en) * | 2017-12-28 | 2024-02-13 | 株式会社力森诺科 | Sealing composition and semiconductor device |
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| JP2004292515A (en) * | 2003-03-25 | 2004-10-21 | Sumitomo Bakelite Co Ltd | Highly heat conductive epoxy resin composition and semiconductor device |
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| CN111566163B (en) * | 2017-12-28 | 2024-02-13 | 株式会社力森诺科 | Sealing composition and semiconductor device |
| JPWO2020175669A1 (en) * | 2019-02-28 | 2021-12-23 | 昭和電工マテリアルズ株式会社 | Encapsulation composition and semiconductor device |
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