TW201927898A - Epoxy resin composition for encapsulation of semiconductor device and semiconductor device encapsulated using the same - Google Patents

Epoxy resin composition for encapsulation of semiconductor device and semiconductor device encapsulated using the same Download PDF

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TW201927898A
TW201927898A TW107144606A TW107144606A TW201927898A TW 201927898 A TW201927898 A TW 201927898A TW 107144606 A TW107144606 A TW 107144606A TW 107144606 A TW107144606 A TW 107144606A TW 201927898 A TW201927898 A TW 201927898A
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epoxy resin
resin composition
semiconductor device
average particle
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TWI782155B (en
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裵慶徹
朴容葉
貞和 金
尹祉兒
金相均
李東桓
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南韓商三星Sdi股份有限公司
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    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00Use of inorganic substances as compounding ingredients
    • C08K3/02Elements
    • C08K3/04Carbon
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    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00Use of inorganic substances as compounding ingredients
    • C08K3/18Oxygen-containing compounds, e.g. metal carbonyls
    • C08K3/20Oxides; Hydroxides
    • C08K3/22Oxides; Hydroxides of metals
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00Use of inorganic substances as compounding ingredients
    • C08K3/28Nitrogen-containing compounds
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00Use of inorganic substances as compounding ingredients
    • C08K3/38Boron-containing compounds
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    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L63/00Compositions of epoxy resins; Compositions of derivatives of epoxy resins
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293Organic, e.g. plastic
    • H01L23/295Organic, e.g. plastic containing a filler
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00Use of inorganic substances as compounding ingredients
    • C08K3/18Oxygen-containing compounds, e.g. metal carbonyls
    • C08K3/20Oxides; Hydroxides
    • C08K3/22Oxides; Hydroxides of metals
    • C08K2003/2227Oxides; Hydroxides of metals of aluminium
    • CCHEMISTRY; METALLURGY
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    • C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00Use of inorganic substances as compounding ingredients
    • C08K3/28Nitrogen-containing compounds
    • C08K2003/282Binary compounds of nitrogen with aluminium
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00Use of inorganic substances as compounding ingredients
    • C08K3/38Boron-containing compounds
    • C08K2003/382Boron-containing compounds and nitrogen
    • C08K2003/385Binary compounds of nitrogen with boron
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K2201/00Specific properties of additives
    • C08K2201/011Nanostructured additives

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  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Epoxy Resins (AREA)

Abstract

An epoxy resin composition for encapsulation of semiconductor devices and a semiconductor device encapsulated using the same. The epoxy resin composition includes an epoxy resin; a curing agent; a filler; and a curing accelerator, wherein the filler includes a mixture of diamond nanoparticles and at least one of alumina, aluminum nitrate and boron nitrate, and the diamond nanoparticles may have an average particle diameter (D50) of 1 nm to 100 nm.

Description

用於包封半導體裝置的環氧樹脂組成物及使用其包封的半導體裝置Epoxy resin composition for encapsulating semiconductor device and semiconductor device using the same

本發明是有關於一種用於包封半導體裝置的環氧樹脂組成物及一種使用其包封的半導體裝置。更具體而言,本發明是有關於一種具有高熱導率以確保良好的散熱的用於包封半導體裝置的環氧樹脂組成物及一種使用其包封的半導體裝置。The present invention relates to an epoxy resin composition for encapsulating a semiconductor device and a semiconductor device using the same. More specifically, the present invention relates to an epoxy resin composition for encapsulating a semiconductor device having high thermal conductivity to ensure good heat dissipation, and a semiconductor device using the same.

隨著對應於積體電路的積體密度提高之晶片尺寸的增大,現有的表面安裝封裝已逐漸替換為薄型扁平封裝,例如雙列直插式封裝(dual in-line package,DIP)、小輪廓封裝(small outline package,SOP)、小輪廓J形引線封裝(small outline J-lead package,SOJ封裝)、塑膠帶引線晶片載體(plastic leaded chip carrier,PLCC),特別是方形扁平封裝(quad-flat package,QFP)。當前,更多積體封裝(例如球柵陣列(ball grid array,BGA)、晶片級封裝(chip size package,CSP)、覆晶(flip chip,FC)、大規模積體電路(Large Scale Integrated circuit,LSI)封裝等)在此項技術中備受關注。當前積體電路(integrated circuit,IC)不僅需要減小封裝大小對晶片大小的比率,且亦需要高的輸出,以提供更快的操作速度或更高的接面溫度(junction temperature)。此類要求可進一步增大裝置故障率。一般而言,儘管使用額外的散熱材料、散熱塊(heat-slug)或散熱器(heat spreader)來滿足此類要求,然而需要額外的用於系統改變的成本。具有高散熱能力的熱增強型模製化合物(thermally enhanced mold compound,TEMC)是滿足此類要求的有用的替代物。With the increase in chip size corresponding to the increase in the density of integrated circuits, the existing surface-mount packages have gradually been replaced by thin flat packages, such as dual in-line packages (DIP), small Small outline package (SOP), small outline J-lead package (SOJ package), plastic leaded chip carrier (PLCC), especially quad flat package (quad- flat package (QFP). At present, more integrated package (such as ball grid array (BGA), chip size package (CSP), flip chip (FC), large scale integrated circuit (Large Scale Integrated circuit) , LSI) packaging, etc.) attract much attention in this technology. Current integrated circuits (ICs) not only need to reduce the ratio of package size to chip size, but also high output to provide faster operating speed or higher junction temperature. Such requirements can further increase device failure rates. In general, although additional heat-dissipating materials, heat-slugs, or heat spreaders are used to meet such requirements, additional costs are required for system changes. Thermally enhanced mold compound (TEMC) with high heat dissipation capability is a useful alternative to meet such requirements.

本發明的目的是提供一種具有高熱導率以確保良好的散熱的用於包封半導體裝置的環氧樹脂組成物。An object of the present invention is to provide an epoxy resin composition for encapsulating a semiconductor device having high thermal conductivity to ensure good heat dissipation.

本發明的另一目的是提供一種使用如上所述用於包封半導體裝置的環氧樹脂組成物包封的半導體裝置。Another object of the present invention is to provide a semiconductor device encapsulated using the epoxy resin composition for encapsulating a semiconductor device as described above.

根據本發明的一個態樣,一種用於包封半導體裝置的環氧樹脂組成物包含:環氧樹脂;固化劑;填料;及固化加速劑,其中填料包括金剛石奈米顆粒與氧化鋁、硝酸鋁及硝酸硼中的至少一者的混合物,且金剛石奈米顆粒可具有1奈米至100奈米的平均粒徑(D50)。According to one aspect of the present invention, an epoxy resin composition for encapsulating a semiconductor device includes: an epoxy resin; a curing agent; a filler; and a curing accelerator, wherein the filler includes diamond nano particles and alumina and aluminum nitrate. And at least one of boron nitrate, and the diamond nano particles may have an average particle diameter (D50) of 1 to 100 nanometers.

在一個實施例中,在環氧樹脂組成物中,可存在0.01重量%(wt%)至5重量%的量的金剛石奈米顆粒。In one embodiment, diamond nano particles may be present in the epoxy resin composition in an amount of 0.01% by weight (wt%) to 5% by weight.

在一個實施例中,氧化鋁、硝酸鋁及硝酸硼中的至少一者可具有較金剛石奈米顆粒大的平均粒徑(D50)。In one embodiment, at least one of alumina, aluminum nitrate, and boron nitrate may have a larger average particle diameter (D50) than diamond nano particles.

在一個實施例中,氧化鋁可具有1微米至10微米的平均粒徑(D50),硝酸鋁可具有1微米至10微米的平均粒徑(D50),且硝酸硼可具有5微米至20微米的平均粒徑(D50)。In one embodiment, alumina may have an average particle size (D50) of 1 to 10 microns, aluminum nitrate may have an average particle size (D50) of 1 to 10 microns, and boron nitrate may have 5 to 20 microns Average particle size (D50).

在一個實施例中,在環氧樹脂組成物中,可存在50重量%至95重量%的量的氧化鋁、硝酸鋁及硝酸硼中的至少一者。In one embodiment, in the epoxy resin composition, at least one of alumina, aluminum nitrate, and boron nitrate may be present in an amount of 50% to 95% by weight.

在一個實施例中,環氧樹脂組成物可包含0.5重量%至20重量%的環氧樹脂、0.1重量%至13重量%的固化劑、70重量%至95重量%的填料以及0.01重量%至2重量%的固化加速劑。In one embodiment, the epoxy resin composition may include 0.5% to 20% by weight of an epoxy resin, 0.1% to 13% by weight of a curing agent, 70% to 95% by weight of a filler, and 0.01% by weight to 2% by weight curing accelerator.

根據本發明的另一態樣,提供一種由如上所述的環氧樹脂組成物包封的半導體裝置。According to another aspect of the present invention, there is provided a semiconductor device encapsulated by the epoxy resin composition as described above.

以下將詳細闡述本發明的實施例。本文中將省略可能不必要地使本發明的標的模糊不清的已知功能及構造的說明。Hereinafter, embodiments of the present invention will be explained in detail. Descriptions of known functions and constructions that may unnecessarily obscure the subject matter of the present invention will be omitted herein.

此外,藉由考量本發明的功能而對本文中所使用的用語進行定義,且所述用語可根據使用者或操作者的習慣或意圖而變化。因此,應根據本文中所述的整體揭露內容而對所述用語進行定義。
用於包封半導體裝置的環氧樹脂組成物
In addition, terms used herein are defined by considering the functions of the present invention, and the terms may be changed according to the habits or intentions of a user or an operator. Therefore, the terms should be defined in terms of the overall disclosure described herein.
Epoxy resin composition for encapsulating semiconductor device

本發明的一個態樣是有關於一種用於包封半導體裝置的環氧樹脂組成物。One aspect of the present invention relates to an epoxy resin composition for encapsulating a semiconductor device.

為了將高熱導率賦予用於包封半導體裝置的環氧樹脂組成物,需要相對大量的填料。然而,使用大量填料會增加環氧樹脂組成物的黏性同時降低其可流動性,因而造成封裝的可模製性問題。另外,由於包含於環氧模製產品中的樹脂具有為0.2 W/m∙K的低熱導率,因此包含所述樹脂的混合物很難具有為6 W/m∙K或大於6 W/m∙K的高熱導率。In order to impart a high thermal conductivity to an epoxy resin composition for encapsulating a semiconductor device, a relatively large amount of filler is required. However, the use of a large amount of filler increases the viscosity of the epoxy resin composition while reducing its flowability, thereby causing moldability problems of the package. In addition, since the resin contained in the epoxy molded product has a low thermal conductivity of 0.2 W / m ∙ K, it is difficult for a mixture containing the resin to have 6 W / m ∙ K or more than 6 W / m ∙ High thermal conductivity of K.

藉由開發能夠顯著增大熱導率以確保高的散熱並具有良好的可流動性以減少熱膨脹及水分吸收的用於包封半導體裝置的環氧樹脂組成物的各種研究,本發明的發明人發現了可使用平均粒徑(D50)為1奈米至100奈米的金剛石奈米顆粒與氧化鋁、硝酸鋁及硝酸硼中的至少一者的混合物作為填料來達成以上目的,並且完成了本發明。The inventors of the present invention have made various studies on the development of an epoxy resin composition for encapsulating a semiconductor device that can significantly increase thermal conductivity to ensure high heat dissipation and has good flowability to reduce thermal expansion and moisture absorption. It was found that a mixture of diamond nano particles with an average particle diameter (D50) of 1 nm to 100 nm and at least one of alumina, aluminum nitrate, and boron nitrate can be used as a filler to achieve the above purpose, and completed the present invention invention.

根據本發明的環氧樹脂組成物包含環氧樹脂、固化劑、填料及固化加速劑,其中所述填料包括金剛石奈米顆粒與氧化鋁、硝酸鋁及硝酸硼中的至少一者的混合物,且所述金剛石奈米顆粒可具有1奈米至100奈米的平均粒徑(D50)。本文中,「平均粒徑(D50)」意指以顆粒的直徑計在以重量單位分佈的顆粒中50重量%的顆粒的粒徑,且可藉由熟習此項技術者已知的典型方法來量測。環氧樹脂組成物可具有6 W/m∙K或大於6 W/m∙K、較佳地6W/m∙K至20W/m∙K的熱導率。The epoxy resin composition according to the present invention includes an epoxy resin, a curing agent, a filler, and a curing accelerator, wherein the filler includes a mixture of diamond nano particles and at least one of alumina, aluminum nitrate, and boron nitrate, and The diamond nano particles may have an average particle diameter (D50) of 1 to 100 nanometers. Herein, the "average particle diameter (D50)" means the particle diameter of 50% by weight of the particles in the particles distributed in units of weight based on the diameter of the particles, and can be obtained by a typical method known to those skilled in the art Measure. The epoxy resin composition may have a thermal conductivity of 6 W / m ∙ K or more, and preferably from 6 W / m ∙ K to 20 W / m ∙ K.

接下來,將詳細地闡述根據本發明的環氧樹脂組成物的組分。
環氧樹脂
Next, the components of the epoxy resin composition according to the present invention will be explained in detail.
Epoxy resin

根據本發明,環氧樹脂可選自用於包封半導體裝置的任何環氧樹脂,而不限於特定環氧樹脂。具體而言,環氧樹脂可為具有二或更多個環氧基的環氧化合物。環氧樹脂的實例可包括藉由對酚或烷基酚與羥基苯甲醛的縮合物進行環氧化而獲得的環氧樹脂、酚芳烷基型環氧樹脂、酚酚醛清漆型環氧樹脂、甲酚酚醛清漆型環氧樹脂、多官能環氧樹脂、萘酚酚醛清漆型環氧樹脂、雙酚A/雙酚F/雙酚AD的酚醛清漆型環氧樹脂、雙酚A/雙酚F/雙酚AD的縮水甘油醚、雙羥基聯苯環氧樹脂、二環戊二烯環氧樹脂、聯苯型環氧樹脂等。更具體而言,環氧樹脂可包括聯苯型環氧樹脂、酚芳烷基型環氧樹脂、甲酚酚醛清漆型環氧樹脂及多官能環氧樹脂中的至少一者。較佳地,環氧樹脂包括聯苯型環氧樹脂及酚芳烷基型環氧樹脂中的至少一者。According to the present invention, the epoxy resin may be selected from any epoxy resin used for encapsulating a semiconductor device, and is not limited to a specific epoxy resin. Specifically, the epoxy resin may be an epoxy compound having two or more epoxy groups. Examples of the epoxy resin may include an epoxy resin obtained by epoxidizing a phenol or a condensate of an alkylphenol and a hydroxybenzaldehyde, a phenol aralkyl type epoxy resin, a novolac type epoxy resin, Novolac epoxy resin, polyfunctional epoxy resin, naphthol novolac epoxy resin, bisphenol A / bisphenol F / bisphenol AD novolac epoxy resin, bisphenol A / bisphenol F / Glycidyl ether of bisphenol AD, dihydroxy biphenyl epoxy resin, dicyclopentadiene epoxy resin, biphenyl epoxy resin, etc. More specifically, the epoxy resin may include at least one of a biphenyl type epoxy resin, a phenol aralkyl type epoxy resin, a cresol novolac type epoxy resin, and a polyfunctional epoxy resin. Preferably, the epoxy resin includes at least one of a biphenyl type epoxy resin and a phenol aralkyl type epoxy resin.

具體而言,聯苯型環氧樹脂可由式1表示,但並非僅限於此。
<式1>


其中R為C1 至C4 烷基,且平均而言,n為0至7的整數。
Specifically, the biphenyl type epoxy resin can be represented by Formula 1, but is not limited thereto.
< Formula 1 >


Where R is a C 1 to C 4 alkyl group, and on average, n is an integer from 0 to 7.

慮及環氧樹脂組成物的可固化性,環氧樹脂可具有100克/當量至500克/當量的環氧當量重量。在此範圍內,環氧樹脂可提高環氧樹脂組成物的固化程度。Considering the curability of the epoxy resin composition, the epoxy resin may have an epoxy equivalent weight of 100 g / equivalent to 500 g / equivalent. Within this range, the epoxy resin can improve the curing degree of the epoxy resin composition.

環氧樹脂可單獨使用或以其混合物形式使用。可使用藉由使環氧樹脂與其他組分(例如固化劑、固化加速劑、脫模劑、偶合劑、應力消除劑等)預反應而獲得的加成物,例如熔融母料。The epoxy resin may be used alone or in the form of a mixture thereof. An adduct obtained by pre-reacting an epoxy resin with other components such as a curing agent, a curing accelerator, a release agent, a coupling agent, a stress relief agent, and the like, such as a molten masterbatch, may be used.

在一個實施例中,在用於包封半導體裝置的環氧樹脂組成物中,可存在0.5重量%至20重量%、具體而言3重量%至15重量%的量的環氧樹脂。在此範圍內,環氧樹脂組成物不會遭遇可固化性劣化。舉例而言,可存在0.5重量%、0.6重量%、0.7重量%、0.8重量%、0.9重量%、1重量%、1.5重量%、2重量%、3重量%、4重量%、5重量%、6重量%、7重量%、8重量%、9重量%、10重量%、11重量%、12重量%、13重量%、14重量%、15重量%、16重量%、17重量%、18重量%、19重量%或20重量%的量的環氧樹脂。
固化劑
In one embodiment, in the epoxy resin composition for encapsulating a semiconductor device, the epoxy resin may be present in an amount of 0.5 to 20% by weight, specifically 3 to 15% by weight. Within this range, the epoxy resin composition does not suffer from curability deterioration. For example, there may be 0.5% by weight, 0.6% by weight, 0.7% by weight, 0.8% by weight, 0.9% by weight, 1% by weight, 1.5% by weight, 2% by weight, 3% by weight, 4% by weight, 5% by weight, 6% by weight, 7% by weight, 8% by weight, 9% by weight, 10% by weight, 11% by weight, 12% by weight, 13% by weight, 14% by weight, 15% by weight, 16% by weight, 17% by weight, 18% by weight %, 19% by weight, or 20% by weight of epoxy resin.
Hardener

固化劑可選自用於包封半導體裝置的任何典型固化劑,而不限於特定固化劑。具體而言,固化劑可為酚類固化劑。舉例而言,酚類固化劑可包括以下中的至少一者:酚芳烷基型酚樹脂、酚酚醛清漆型酚樹脂、多官能酚樹脂、新酚(Xylok)型酚樹脂、甲酚酚醛清漆型酚樹脂、萘酚型酚樹脂、萜烯型酚樹脂、二環戊二烯酚樹脂、自雙酚A及可溶酚醛樹脂(resoles)合成的酚醛清漆型酚樹脂以及多元酚化合物(例如三(羥基苯基)甲烷及二羥基聯苯)。較佳地,酚類固化劑可包括酚芳烷基型酚樹脂、酚酚醛清漆型酚樹脂及多官能酚樹脂中的至少一者,更佳為酚芳烷基型酚樹脂與新酚型酚樹脂的混合物。The curing agent may be selected from any typical curing agent for encapsulating a semiconductor device, and is not limited to a specific curing agent. Specifically, the curing agent may be a phenolic curing agent. For example, the phenolic curing agent may include at least one of the following: phenol aralkyl phenol resin, phenol novolac phenol resin, multifunctional phenol resin, new phenol (Xylok) phenol resin, cresol novolac Type phenol resin, naphthol type phenol resin, terpene type phenol resin, dicyclopentadiene phenol resin, novolac type phenol resin synthesized from bisphenol A and soluble phenolic resins (resoles), and polyphenol compounds (such as three (Hydroxyphenyl) methane and dihydroxybiphenyl). Preferably, the phenolic curing agent may include at least one of a phenol aralkyl phenol resin, a phenol novolac phenol resin, and a polyfunctional phenol resin, more preferably a phenol aralkyl phenol resin and a neophenol phenol Resin mixture.

具體而言,酚芳烷基型環氧樹脂可由式2表示,但並非僅限於此:
<式2>

其中平均而言,n為1至7的整數。
Specifically, the phenolaralkyl-type epoxy resin can be represented by Formula 2, but is not limited thereto:
< Formula 2 >

Among them, n is an integer of 1 to 7 on average.

具體而言,新酚型酚樹脂可由式3表示,但並非僅限於此:
<式3>

其中平均而言,n為0至7的整數。
Specifically, the new phenol-type phenol resin can be represented by Formula 3, but is not limited thereto:
< Formula 3 >

Among them, n is an integer of 0 to 7 on average.

慮及可固化性,固化劑可具有90克/當量至250克/當量的羥基當量重量。在此範圍內,固化劑可提高固化程度。Considering curability, the curing agent may have a hydroxyl equivalent weight of 90 g / equivalent to 250 g / equivalent. Within this range, the curing agent can increase the degree of curing.

該些固化劑可單獨使用或以其組合形式使用。另外,固化劑可以藉由使以上固化劑與其他組分(例如環氧樹脂、固化加速劑、脫模劑及應力消除劑)預反應而獲得的加成物(例如熔融母料)的形式使用。These curing agents can be used alone or in combination. In addition, the curing agent may be used in the form of an adduct (such as a molten masterbatch) obtained by pre-reacting the above curing agent with other components (such as epoxy resin, curing accelerator, mold release agent, and stress relief agent). .

在環氧樹脂組成物中,可存在約0.1重量%至約13重量%、較佳地約0.1重量%至約10重量%的量的固化劑。在此範圍內,環氧樹脂組成物不會遭遇可固化性劣化。舉例而言,可存在0.1重量%、0.2重量%、0.3重量%、0.4重量%、0.5重量%、0.6重量%、0.7重量%、0.8重量%、0.9重量%、1重量%、1.5重量%、2重量%、3重量%、4重量%、5重量%、6重量%、7重量%、8重量%、9重量%、10重量%、11重量%、12重量%或13重量%的量的固化劑。In the epoxy resin composition, the curing agent may be present in an amount of about 0.1% to about 13% by weight, preferably about 0.1% to about 10% by weight. Within this range, the epoxy resin composition does not suffer from curability deterioration. For example, 0.1% by weight, 0.2% by weight, 0.3% by weight, 0.4% by weight, 0.5% by weight, 0.6% by weight, 0.7% by weight, 0.8% by weight, 0.9% by weight, 1% by weight, 1.5% by weight, 2 wt%, 3 wt%, 4 wt%, 5 wt%, 6 wt%, 7 wt%, 8 wt%, 9 wt%, 10 wt%, 11 wt%, 12 wt%, or 13 wt% Hardener.

可根據半導體裝置封裝的機械性質及防潮可靠性來調整環氧樹脂對固化劑的混合比率。舉例而言,環氧樹脂對固化劑的化學當量比可介於0.95至3、具體而言1至2、更具體而言1至1.75範圍內。在此範圍內,環氧樹脂組成物可表現出良好的後固化強度。
填料
The mixing ratio of the epoxy resin to the curing agent can be adjusted according to the mechanical properties of the semiconductor device package and the moisture-proof reliability. For example, the stoichiometric ratio of epoxy resin to curing agent may be in the range of 0.95 to 3, specifically 1 to 2, more specifically 1 to 1.75. Within this range, the epoxy resin composition can exhibit good post-cure strength.
filler

填料適於在減輕施加至環氧樹脂組成物的應力的同時提高其機械強度。另外,根據本發明的填料可藉由熱導率的顯著增加來改善散熱,且可在減少環氧樹脂組成物的熱膨脹及水分吸收的同時確保其高的可流動性。The filler is suitable for improving the mechanical strength while reducing the stress applied to the epoxy resin composition. In addition, the filler according to the present invention can improve heat dissipation by a significant increase in thermal conductivity, and can reduce the thermal expansion and moisture absorption of the epoxy resin composition while ensuring its high flowability.

根據本發明,填料可包括金剛石奈米顆粒與氧化鋁顆粒、硝酸鋁顆粒及硝酸硼顆粒中的至少一者的混合物。金剛石奈米顆粒可具有1奈米至100奈米的平均粒徑(D50)。According to the present invention, the filler may include a mixture of diamond nano particles and at least one of alumina particles, aluminum nitrate particles, and boron nitrate particles. The diamond nano particles may have an average particle diameter (D50) of 1 to 100 nanometers.

金剛石具有約1,000 W/m∙K的熱導率。另外,氧化鋁、硝酸鋁及硝酸硼具有約25 W/m∙K的熱導率。在平均粒徑的以上範圍內,金剛石奈米顆粒可填充由氧化鋁顆粒、硝酸鋁顆粒及硝酸硼顆粒中的至少一者形成的空位,或者可設置在氧化鋁顆粒、硝酸鋁顆粒或硝酸硼顆粒之間。在根據本發明的環氧樹脂組成物中,相較於平均粒徑(D50)大於100奈米且不填充空位的金剛石奈米顆粒而言,所述金剛石奈米顆粒可藉由熱導率的顯著增加來改善散熱,且可在減少環氧樹脂組成物的熱膨脹及水分吸收的同時確保其高的可流動性。較佳地,金剛石奈米顆粒具有10奈米至80奈米的平均粒徑(D50)。Diamond has a thermal conductivity of approximately 1,000 W / m ∙ K. In addition, alumina, aluminum nitrate, and boron nitrate have thermal conductivity of about 25 W / m ∙ K. Within the above range of the average particle diameter, the diamond nano particles may fill a vacancy formed by at least one of alumina particles, aluminum nitrate particles, and boron nitrate particles, or may be disposed on the alumina particles, aluminum nitrate particles, or boron nitrate. Between particles. In the epoxy resin composition according to the present invention, compared with diamond nano particles having an average particle diameter (D50) greater than 100 nanometers and not filled with vacancies, the diamond nano particles can be made by thermal conductivity. Significantly increased to improve heat dissipation, while reducing the thermal expansion and moisture absorption of the epoxy resin composition while ensuring its high flowability. Preferably, the diamond nano particles have an average particle diameter (D50) of 10 to 80 nanometers.

氧化鋁顆粒、硝酸鋁顆粒及硝酸硼顆粒中的至少一者可具有較金剛石奈米顆粒大的平均粒徑(D50)。藉由此結構,氧化鋁顆粒、硝酸鋁顆粒及硝酸硼顆粒中的至少一者之間形成空位,且平均粒徑(D50)處於以上範圍內的金剛石奈米顆粒可填充所述空位。氧化鋁顆粒可具有1微米至10微米、較佳地5微米至6微米的平均粒徑(D50)。硝酸鋁顆粒可具有1微米至10微米、較佳地1微米至5微米的平均粒徑(D50)。硝酸硼顆粒可具有5微米至20微米、較佳地10微米至15微米的平均粒徑(D50)。在平均粒徑的該些範圍內,環氧樹脂組成物可確保可流動性、熱導率及比介電常數(specific dielectric constant)方面的良好性質。氧化鋁顆粒、硝酸鋁顆粒及硝酸硼顆粒中的至少一者可視需要被預先塗佈以偶合劑、環氧樹脂或固化劑。At least one of the alumina particles, aluminum nitrate particles, and boron nitrate particles may have a larger average particle diameter (D50) than the diamond nano particles. With this structure, vacancies are formed between at least one of the alumina particles, aluminum nitrate particles, and boron nitrate particles, and the diamond nano particles having an average particle diameter (D50) within the above range can fill the vacancies. The alumina particles may have an average particle diameter (D50) of 1 to 10 microns, preferably 5 to 6 microns. The aluminum nitrate particles may have an average particle diameter (D50) of 1 micrometer to 10 micrometers, preferably 1 micrometer to 5 micrometers. The boron nitrate particles may have an average particle diameter (D50) of 5 to 20 microns, preferably 10 to 15 microns. Within these ranges of the average particle diameter, the epoxy resin composition can ensure good properties in terms of flowability, thermal conductivity, and specific dielectric constant. At least one of alumina particles, aluminum nitrate particles, and boron nitrate particles may be previously coated with a coupling agent, an epoxy resin, or a curing agent as necessary.

金剛石奈米顆粒可具有球形狀或非球形狀,但並非僅限於此。在環氧樹脂組成物中,可存在0.01重量%至5重量%、較佳地0.1重量%至3重量%的量的金剛石奈米顆粒。在此範圍內,金剛石奈米顆粒可在防止環氧樹脂組成物的可流動性劣化的同時提高其熱導率。舉例而言,可存在0.01重量%、0.02重量%、0.05重量%、0.1重量%、0.2重量%、0.3重量%、0.4重量%、0.5重量%、0.6重量%、0.7重量%、0.8重量%、0.9重量%、1重量%、2重量%、3重量%、4重量%或5重量%的量的金剛石奈米顆粒。The diamond nano particles may have a spherical shape or an aspherical shape, but are not limited thereto. In the epoxy resin composition, diamond nano particles may be present in an amount of 0.01 to 5% by weight, preferably 0.1 to 3% by weight. Within this range, the diamond nano particles can improve the thermal conductivity while preventing the flowability of the epoxy resin composition from deteriorating. For example, 0.01% by weight, 0.02% by weight, 0.05% by weight, 0.1% by weight, 0.2% by weight, 0.3% by weight, 0.4% by weight, 0.5% by weight, 0.6% by weight, 0.7% by weight, 0.8% by weight, Diamond nano particles in an amount of 0.9% by weight, 1% by weight, 2% by weight, 3% by weight, 4% by weight, or 5% by weight.

氧化鋁顆粒、硝酸鋁顆粒及硝酸硼顆粒可具有球形狀或非球形狀,但並非僅限於此。球形顆粒可提高環氧樹脂組成物的可流動性。在環氧樹脂組成物中,可存在50重量%至95重量%、較佳地75重量%至90重量%的量的氧化鋁顆粒、硝酸鋁顆粒及硝酸硼顆粒中的至少一者。在此範圍內,氧化鋁顆粒、硝酸鋁顆粒或硝酸硼顆粒可在防止環氧樹脂組成物的可流動性劣化的同時提高其熱導率。The alumina particles, aluminum nitrate particles, and boron nitrate particles may have a spherical shape or an aspherical shape, but are not limited thereto. The spherical particles can improve the flowability of the epoxy resin composition. In the epoxy resin composition, at least one of alumina particles, aluminum nitrate particles, and boron nitrate particles may be present in an amount of 50 to 95% by weight, preferably 75 to 90% by weight. Within this range, alumina particles, aluminum nitrate particles, or boron nitrate particles can prevent the flowability of the epoxy resin composition from being deteriorated while improving its thermal conductivity.

在環氧樹脂組成物中,填料的量可依據環氧樹脂組成物的目標性質(包括可模製性、低應力及高溫強度)來改變。具體而言,在環氧樹脂組成物中,可存在70重量%至95重量%、例如75重量%至94重量%的量的填料。在此範圍內,填料可確保環氧樹脂組成物在可流動性、可靠性、比介電常數及熱導率方面的目標性質。舉例而言,可存在70重量%、71重量%、72重量%、73重量%、74重量%、75重量%、76重量%、77重量%、78重量%、79重量%、80重量%、81重量%、82重量%、83重量%、84重量%、85重量%、86重量%、87重量%、88重量%、89重量%、90重量%、91重量%、92重量%、93重量%、94重量%或95重量%的量的填料。
固化加速劑
In the epoxy resin composition, the amount of the filler may be changed according to the target properties of the epoxy resin composition, including moldability, low stress, and high temperature strength. Specifically, in the epoxy resin composition, a filler may be present in an amount of 70 to 95% by weight, for example, 75 to 94% by weight. Within this range, the filler can ensure the target properties of the epoxy resin composition in terms of flowability, reliability, specific permittivity, and thermal conductivity. For example, there may be 70% by weight, 71% by weight, 72% by weight, 73% by weight, 74% by weight, 75% by weight, 76% by weight, 77% by weight, 78% by weight, 79% by weight, 80% by weight, 81% by weight, 82% by weight, 83% by weight, 84% by weight, 85% by weight, 86% by weight, 87% by weight, 88% by weight, 89% by weight, 90% by weight, 91% by weight, 92% by weight, 93% by weight %, 94% or 95% by weight of filler.
Curing accelerator

固化加速劑促進環氧樹脂與固化劑之間的反應。固化加速劑的實例可包括三級胺、有機金屬化合物、有機磷化合物、咪唑化合物及硼化合物。The curing accelerator promotes the reaction between the epoxy resin and the curing agent. Examples of the curing accelerator may include tertiary amines, organic metal compounds, organic phosphorus compounds, imidazole compounds, and boron compounds.

三級胺的實例可包括苯甲基二甲胺、三乙醇胺、三乙二胺、二乙胺基乙醇、三(二甲胺基甲基)酚、2,2-(二甲胺基甲基)酚、2,4,6-三(二胺基甲基)酚、三-2-乙基己酸的鹽等,但並非僅限於此。有機金屬化合物的實例可包括乙醯丙酮酸鉻、乙醯丙酮酸鋅、乙醯丙酮酸鎳等,但並非僅限於此。有機磷化合物的實例可包括三-4-甲氧基膦、四丁基溴化鏻、四苯基溴化鏻、苯基膦、二苯基膦、三苯基膦、三苯基膦三苯基硼烷、三苯基膦-1,4-苯醌加成物等,但並非僅限於此。咪唑化合物的實例可包括2-苯基-4-甲基咪唑(2-phenyl-4-methylidazole)、2-甲基咪唑、2-苯基咪唑、2-胺基咪唑、2-甲基-1-乙烯基咪唑、2-乙基-4-甲基咪唑、2-十七基咪唑等,但並非僅限於此。硼化合物的實例可包括四苯基鏻四苯基硼酸鹽、三苯基膦四苯基硼酸鹽、四苯基硼酸鹽、三氟硼烷-正己胺、三氟硼烷單乙胺、四氟硼烷三乙胺、四氟硼烷胺等,但並非僅限於此。作為另一選擇,可使用1,5-二氮雜雙環[4.3.0]壬-5-烯(1,5-diazabicyclo[4.3.0]non-5-ene,DBN)、1,8-二氮雜雙環[5.4.0]十一-7-烯(1,8-diazabicyclo[5.4.0]undec-7-ene,DBU)及酚酚醛樹脂鹽,但並非僅限於此。Examples of tertiary amines may include benzyldimethylamine, triethanolamine, triethylenediamine, diethylaminoethanol, tris (dimethylaminomethyl) phenol, 2,2- (dimethylaminomethyl) ) Phenol, 2,4,6-tris (diaminomethyl) phenol, tri-2-ethylhexanoic acid, and the like, but it is not limited thereto. Examples of the organometallic compound may include, but are not limited to, chromium acetopyruvate, zinc acetopyruvate, nickel acetopyruvate, and the like. Examples of the organic phosphorus compound may include tri-4-methoxyphosphine, tetrabutylphosphonium bromide, tetraphenylphosphonium bromide, phenylphosphine, diphenylphosphine, triphenylphosphine, triphenylphosphinetriphenyl Borane, triphenylphosphine-1,4-benzoquinone adduct, etc., but it is not limited to this. Examples of the imidazole compound may include 2-phenyl-4-methylidazole, 2-methylimidazole, 2-phenylimidazole, 2-aminoimidazole, 2-methyl-1 -But not limited to vinylimidazole, 2-ethyl-4-methylimidazole, 2-heptadecylimidazole, and the like. Examples of the boron compound may include tetraphenylphosphonium tetraphenylborate, triphenylphosphine tetraphenylborate, tetraphenylborate, trifluoroborane-n-hexylamine, trifluoroborane monoethylamine, tetrafluoro Borane triethylamine, tetrafluoroborane amine, and the like are not limited thereto. Alternatively, 1,5-diazabicyclo [4.3.0] non-5-ene (1,5-diazabicyclo [4.3.0] non-5-ene, DBN), 1,8-bis Azabicyclo [5.4.0] undec-7-ene (1,8-diazabicyclo [5.4.0] undec-7-ene, DBU) and phenol novolac resin salts are not limited thereto.

另外,作為固化加速劑,亦可使用藉由使環氧樹脂及/或固化劑預反應而獲得的加成物。In addition, as the curing accelerator, an adduct obtained by pre-reacting an epoxy resin and / or a curing agent may be used.

在環氧樹脂組成物中,可存在0.01重量%至2重量%、具體而言0.02重量%至1.5重量%的量的固化加速劑。在此範圍內,固化加速劑可在確保環氧樹脂組成物的良好可固化性的同時促進其固化。舉例而言,可存在0.01重量%、0.05重量%、0.1重量%、0.2重量%、0.3重量%、0.4重量%、0.5重量%、0.6重量%、0.7重量%、0.8重量%、0.9重量%、1重量%、1.5重量%或2重量%的量的固化加速劑。In the epoxy resin composition, a curing accelerator may be present in an amount of 0.01 to 2% by weight, specifically, 0.02 to 1.5% by weight. Within this range, the curing accelerator can promote the curing of the epoxy resin composition while ensuring good curability. For example, there may be 0.01% by weight, 0.05% by weight, 0.1% by weight, 0.2% by weight, 0.3% by weight, 0.4% by weight, 0.5% by weight, 0.6% by weight, 0.7% by weight, 0.8% by weight, 0.9% by weight, The curing accelerator is in an amount of 1% by weight, 1.5% by weight, or 2% by weight.

根據本發明的環氧樹脂組成物可更包含偶合劑、脫模劑及著色劑中的至少一者。
偶合劑
The epoxy resin composition according to the present invention may further include at least one of a coupling agent, a release agent, and a coloring agent.
Coupling agent

偶合劑適於藉由環氧樹脂與填料之間的反應來提高界面強度,且可例如為矽烷偶合劑。矽烷偶合劑不受特別限制,只要矽烷偶合劑可與環氧樹脂及填料反應以增強環氧樹脂與填料之間的界面的強度即可。偶合劑的實例可包括環氧基矽烷、胺基矽烷、脲基矽烷、巰基矽烷及烷基矽烷。該些偶合劑可單獨使用或以其組合形式使用。The coupling agent is suitable for improving the interfacial strength by the reaction between the epoxy resin and the filler, and may be, for example, a silane coupling agent. The silane coupling agent is not particularly limited as long as the silane coupling agent can react with the epoxy resin and the filler to enhance the strength of the interface between the epoxy resin and the filler. Examples of the coupling agent may include epoxy silane, amine silane, ureido silane, mercapto silane, and alkyl silane. These coupling agents can be used alone or in combination.

在環氧樹脂組成物中,可存在約0.01重量%至約5重量%、較佳地約0.05重量%至約3重量%的量的偶合劑。在此範圍內,環氧樹脂組成物可具有提高的後固化強度。舉例而言,可存在0.01重量%、0.05重量%、0.1重量%、0.2重量%、0.3重量%、0.4重量%、0.5重量%、0.6重量%、0.7重量%、0.8重量%、0.9重量%、1重量%、1.5重量%、2重量%、3重量%、4重量%或5重量%的量的偶合劑。
脫模劑
In the epoxy resin composition, a coupling agent may be present in an amount of about 0.01% to about 5% by weight, preferably about 0.05% to about 3% by weight. Within this range, the epoxy resin composition may have improved post-cure strength. For example, there may be 0.01% by weight, 0.05% by weight, 0.1% by weight, 0.2% by weight, 0.3% by weight, 0.4% by weight, 0.5% by weight, 0.6% by weight, 0.7% by weight, 0.8% by weight, 0.9% by weight, The coupling agent is in an amount of 1% by weight, 1.5% by weight, 2% by weight, 3% by weight, 4% by weight, or 5% by weight.
Release agent

脫模劑可包括選自由以下組成的群組中的至少一者:石蠟、酯蠟、高級脂肪酸、高級脂肪酸金屬鹽、天然脂肪酸以及天然脂肪酸金屬鹽。The release agent may include at least one selected from the group consisting of paraffin wax, ester wax, higher fatty acid, higher fatty acid metal salt, natural fatty acid, and natural fatty acid metal salt.

在環氧樹脂組成物中,可存在0.1重量%至1重量%的量的脫模劑。舉例而言,可存在0.1重量%、0.2重量%、0.3重量%、0.4重量%、0.5重量%、0.6重量%、0.7重量%、0.8重量%、0.9重量%或1重量%的量的脫模劑。
著色劑
In the epoxy resin composition, a release agent may be present in an amount of 0.1 to 1% by weight. For example, demolding may be present in an amount of 0.1% by weight, 0.2% by weight, 0.3% by weight, 0.4% by weight, 0.5% by weight, 0.6% by weight, 0.7% by weight, 0.8% by weight, 0.9% by weight, or 1% by weight Agent.
Colorant

著色劑可用於對半導體裝置的包封體進行雷射標記,且可選自此項技術中習知的任何著色劑。舉例而言,著色劑可包括碳黑、氮化鈦、鈦黑、磷酸氫氧化二銅(dicopper hydroxide phosphate)、氧化鐵及雲母中的至少一者。The colorant can be used for laser marking the encapsulation body of the semiconductor device, and can be selected from any colorant known in the art. For example, the colorant may include at least one of carbon black, titanium nitride, titanium black, dicoper hydroxide phosphate, iron oxide, and mica.

在環氧樹脂組成物中,可存在0.01重量%至5重量%、較佳地0.05重量%至3重量%的量的著色劑。舉例而言,可存在0.01重量%、0.05重量%、0.1重量%、0.2重量%、0.3重量%、0.4重量%、0.5重量%、0.6重量%、0.7重量%、0.8重量%、0.9重量%、1重量%、2重量%、3重量%、4重量%或5重量%的量的著色劑。In the epoxy resin composition, a coloring agent may be present in an amount of 0.01 to 5% by weight, preferably 0.05 to 3% by weight. For example, there may be 0.01% by weight, 0.05% by weight, 0.1% by weight, 0.2% by weight, 0.3% by weight, 0.4% by weight, 0.5% by weight, 0.6% by weight, 0.7% by weight, 0.8% by weight, 0.9% by weight, A coloring agent in an amount of 1% by weight, 2% by weight, 3% by weight, 4% by weight, or 5% by weight.

另外,根據本發明的環氧樹脂組成物可視需要更包含抗氧化劑(例如四[亞甲基-3-(3,5-二-三級丁基-4-羥基苯基)丙酸酯]甲烷)及阻燃劑(例如氫氧化鋁),而不影響本發明的目的。In addition, the epoxy resin composition according to the present invention may further include an antioxidant (for example, tetrakis [methylene-3- (3,5-di-tert-butyl-4-hydroxyphenyl) propionate] methane, if necessary. ) And flame retardants (such as aluminum hydroxide) without affecting the purpose of the present invention.

可藉由以下方法來製備環氧樹脂組成物:在所述方法中,使用亨舍爾混合機(Henschel mixer)或羅迪格混合機(Lödige mixer)對預定量的上述組分進行均勻及充分地混合,然後冷卻並粉碎,隨後使用輥磨機或捏合機進行熔融捏合,藉此獲得最終粉末產品。The epoxy resin composition may be prepared by a method in which a predetermined amount of the above-mentioned components are uniformly and sufficiently used using a Henschel mixer or a Lödige mixer. The mixture is ground and then cooled and pulverized, followed by melt-kneading using a roll mill or kneader, thereby obtaining a final powder product.

根據本發明的環氧樹脂組成物可用於包封半導體裝置,特別是用於汽車的行動顯示器或指紋辨識感測器的半導體裝置。作為使用根據本發明的環氧樹脂組成物包封半導體裝置的方法,一般可使用低壓轉移模製。然而,應理解亦可採用注射成型或澆鑄來模製環氧樹脂組成物。
使用用於包封半導體裝置的環氧樹脂組成物包封的半導體裝置
The epoxy resin composition according to the present invention can be used for encapsulating semiconductor devices, particularly semiconductor devices for mobile displays or fingerprint identification sensors of automobiles. As a method of encapsulating a semiconductor device using the epoxy resin composition according to the present invention, low-pressure transfer molding can be generally used. However, it should be understood that the epoxy resin composition may also be molded by injection molding or casting.
Semiconductor device encapsulated using epoxy resin composition for encapsulating semiconductor device

本發明的另一態樣是有關於一種使用用於包封半導體裝置的環氧樹脂組成物包封的半導體裝置。半導體裝置可由根據本發明的用於包封半導體裝置的環氧樹脂組成物來包封。舉例而言,半導體裝置可包括用於電容型指紋辨識的半導體裝置。Another aspect of the present invention relates to a semiconductor device encapsulated using an epoxy resin composition for encapsulating a semiconductor device. The semiconductor device may be encapsulated by the epoxy resin composition for encapsulating a semiconductor device according to the present invention. For example, the semiconductor device may include a semiconductor device for capacitive fingerprint recognition.

接下來,將參照一些實例來更詳細地闡述本發明。應理解,提供該些實例僅是為了說明,且不應被視為以任何方式限制本發明。Next, the present invention will be explained in more detail with reference to some examples. It should be understood that these examples are provided for illustration only and should not be considered as limiting the invention in any way.

實例及比較實例中所使用的組分的詳細情況如下。
環氧樹脂
1)聯苯型環氧樹脂:YX-4000H(日本環氧樹脂有限公司(Japan Epoxy Resin Inc.),環氧當量重量:196克/當量)
固化劑
2)新酚型酚樹脂:KPH-F3065(科隆化學有限公司(Kolon Chemical Inc.),羥基當量重量:203克/當量)
3)酚芳烷基酚樹脂:MEH-7851(明和有限公司(Meiwa Inc.),羥基當量重量:203克/當量)
填料
4)二氧化矽:以9:1的比率混合的平均粒徑(D50)為20微米的球形熔融二氧化矽與平均粒徑為0.5微米的球形熔融二氧化矽的混合物
5)氧化鋁:平均粒徑(D50)為5微米(DAB-05MS,日本電氣化學有限公司(Denka Denki Inc.))
6)硝酸鋁:平均粒徑(D50)為3微米(ANF,丸和有限公司(Maruwa Inc.))
7)硝酸硼:平均粒徑(D50)為12微米(MBN,三井高科技有限公司(Mitsui Hi-tech Inc.))
8)金剛石奈米顆粒:平均粒徑(D50)為10奈米(綠色資源有限公司(Green Resource Inc.),奈米金剛石10N)
9)金剛石奈米顆粒:平均粒徑(D50)為1奈米(綠色資源有限公司,奈米金剛石1N)
10)金剛石奈米顆粒:平均粒徑(D50)為100奈米(綠色資源有限公司,奈米金剛石100N)
11)金剛石粉末:平均粒徑(D50)為100微米(綠色資源有限公司,奈米金剛石100M)
12)金剛石奈米顆粒:平均粒徑(D50)為150奈米(綠色資源有限公司,奈米金剛石150N)
固化加速劑
13)三苯基膦固化加速劑:TPP-k(北興化學有限公司(Hokko Chemical Inc.))
著色劑
14)碳黑:MA-600B(三菱化學有限公司(Mitsubishi Chemical Inc.))
偶合劑
15)含胺基的三甲氧基矽烷:N-苯基-3-胺基丙基三甲氧基矽烷(KBM-573,信越化學有限公司(Shin-Etsu Chemical Inc.))
實例及比較實例
Details of the components used in the examples and comparative examples are as follows.
Epoxy resin
1) Biphenyl epoxy resin: YX-4000H (Japan Epoxy Resin Inc., epoxy equivalent weight: 196 g / equivalent)
Hardener
2) New phenol type phenol resin: KPH-F3065 (Kolon Chemical Inc., hydroxyl equivalent weight: 203 g / equivalent)
3) Phenol aralkyl phenol resin: MEH-7851 (Meiwa Inc., hydroxyl equivalent weight: 203 g / equivalent)
filler
4) Silicon dioxide: a mixture of 9: 1 ratio of spherical fused silica with an average particle diameter (D50) of 20 microns and spherical fused silica with an average particle diameter of 0.5 microns
5) Alumina: average particle size (D50) is 5 microns (DAB-05MS, Denka Denki Inc.)
6) Aluminum nitrate: average particle size (D50) is 3 microns (ANF, Maruwa Inc.)
7) Boron nitrate: average particle size (D50) is 12 microns (MBN, Mitsui Hi-tech Inc.)
8) Diamond nano particles: the average particle size (D50) is 10 nanometers (Green Resource Inc., nano-diamond 10N)
9) Diamond nano particles: the average particle size (D50) is 1 nanometer (Green Resources Co., Ltd., nano-diamond 1N)
10) Diamond nano particles: average particle size (D50) is 100 nanometers (Green Resources Co., Ltd., nano-diamond 100N)
11) Diamond powder: the average particle size (D50) is 100 microns (Green Resources Co., Ltd., Nano Diamond 100M)
12) Diamond nano particles: average particle size (D50) is 150 nanometers (Green Resources Co., Ltd., nano diamond 150N)
Curing accelerator
13) Triphenylphosphine curing accelerator: TPP-k (Hokko Chemical Inc.)
Colorant
14) Carbon black: MA-600B (Mitsubishi Chemical Inc.)
Coupling agent
15) Amino group-containing trimethoxysilane: N-phenyl-3-aminopropyltrimethoxysilane (KBM-573, Shin-Etsu Chemical Inc.)
Examples and Comparative Examples

以表1所列量(單位:重量份)秤量了以上組分,且使用亨舍爾混合機(KSM-22,金松機械有限公司(Keum Sung Machinery Inc.))在25℃至30℃下均勻混合了30分鐘,以製備初級組成物。接著,使用連續捏合機在高達110℃的溫度下將初級組成物熔融捏合了30分鐘,然後冷卻至10℃至15℃並粉碎,藉此製備用於包封半導體裝置的環氧樹脂組成物。The above components were weighed in the amounts listed in Table 1 (unit: parts by weight), and were uniformed at 25 ° C to 30 ° C using a Henschel mixer (KSM-22, Keum Sung Machinery Inc.) It was mixed for 30 minutes to prepare a primary composition. Next, the primary composition was melt-kneaded using a continuous kneader at a temperature of up to 110 ° C for 30 minutes, and then cooled to 10 ° C to 15 ° C and pulverized, thereby preparing an epoxy resin composition for encapsulating a semiconductor device.

表1
Table 1

針對以下性質藉由以下方法對在實例及比較實例中製備的所述環氧樹脂組成物的每一者進行了評價。結果示於表2中。
性質評價
Each of the epoxy resin compositions prepared in Examples and Comparative Examples was evaluated for the following properties by the following methods. The results are shown in Table 2.
Nature evaluation

(1)可流動性(單位:英吋,螺旋流):使用低壓轉移壓模機在175℃的模製溫度下在70千克力/平方公分的壓力下將所述環氧樹脂組成物的每一者注入與EMMI-1-66對應的用於量測螺旋流的模具,然後量測流場(單位:英吋)。量測值越高則表明可流動性越佳。(1) Flowability (unit: inch, spiral flow): Each of the epoxy resin compositions was subjected to a pressure of 70 kgf / cm² at a molding temperature of 175 ° C using a low-pressure transfer molding machine. One is injected into a mold corresponding to EMMI-1-66 for measuring spiral flow, and then the flow field (unit: inch) is measured. Higher measured values indicate better flowability.

(2)熱導率(單位:W/m∙K):根據美國測試與材料協會(American Society for Testing and Materials,ASTM)D5470在25℃下在使用所述環氧樹脂組成物的每一者製備的樣本上量測了熱導率。(2) Thermal conductivity (unit: W / m ∙ K): According to American Society for Testing and Materials (ASTM) D5470, each of the epoxy resin compositions is used at 25 ° C. The thermal conductivity was measured on the prepared samples.

表2
Table 2

如表2所示,根據本發明的環氧樹脂組成物表現出良好的熱導率及可流動性。As shown in Table 2, the epoxy resin composition according to the present invention exhibits good thermal conductivity and flowability.

相反,不使用金剛石奈米顆粒製備的比較實例1的環氧樹脂組成物、使用金剛石奈米顆粒及二氧化矽而非氧化鋁、硝酸鋁及硝酸硼中的至少一者製備的比較實例3的環氧樹脂組成物以及使用平均粒徑不處於根據本發明的粒徑範圍內的金剛石奈米顆粒製備的比較實例2及比較實例4的環氧樹脂組成物表現出低的熱導率及差的可流動性。特別是,比較實例2的環氧樹脂組成物(其中金剛石粉末具有較氧化鋁顆粒、硝酸鋁顆粒或硝酸硼顆粒大得多的平均粒徑)具有較實例的環氧樹脂組成物差得多的可流動性。In contrast, the epoxy resin composition of Comparative Example 1 prepared without using diamond nano particles, and of Comparative Example 3 prepared with diamond nano particles and silicon dioxide instead of at least one of aluminum oxide, aluminum nitrate, and boron nitrate Epoxy resin compositions and the epoxy resin compositions of Comparative Examples 2 and 4 prepared using diamond nano particles having an average particle diameter not in the particle diameter range according to the present invention exhibit low thermal conductivity and poor Mobility. In particular, the epoxy resin composition of Comparative Example 2 (in which the diamond powder has a much larger average particle diameter than that of alumina particles, aluminum nitrate particles, or boron nitrate particles) has a much worse Mobility.

應理解,在不背離本發明的精神及範圍的條件下熟習此項技術者可作出各種修改、改變、更改及等效實施例。It should be understood that those skilled in the art can make various modifications, changes, alterations and equivalent embodiments without departing from the spirit and scope of the present invention.

no

no

Claims (7)

一種環氧樹脂組成物,用於包封半導體裝置,包含: 環氧樹脂;固化劑;填料;及固化加速劑, 其中所述填料包括金剛石奈米顆粒與氧化鋁、硝酸鋁及硝酸硼中的至少一者的混合物, 所述金剛石奈米顆粒具有1奈米至100奈米的平均粒徑(D50)。An epoxy resin composition for encapsulating a semiconductor device includes: Epoxy resin; curing agent; filler; and curing accelerator, The filler includes a mixture of diamond nano particles and at least one of alumina, aluminum nitrate, and boron nitrate, The diamond nano particles have an average particle diameter (D50) of 1 to 100 nanometers. 如申請專利範圍第1項所述的環氧樹脂組成物,其中在所述環氧樹脂組成物中存在0.01重量%至5重量%的量的所述金剛石奈米顆粒。The epoxy resin composition according to item 1 of the scope of patent application, wherein the diamond nano particles are present in the epoxy resin composition in an amount of 0.01% to 5% by weight. 如申請專利範圍第1項所述的環氧樹脂組成物,其中氧化鋁、硝酸鋁及硝酸硼中的所述至少一者具有較所述金剛石奈米顆粒大的平均粒徑(D50)。The epoxy resin composition according to item 1 of the patent application scope, wherein the at least one of alumina, aluminum nitrate, and boron nitrate has an average particle diameter (D50) larger than the diamond nano particles. 如申請專利範圍第3項所述的環氧樹脂組成物,其中所述氧化鋁具有1微米至10微米的平均粒徑(D50),所述硝酸鋁具有1微米至10微米的平均粒徑(D50),且所述硝酸硼具有5微米至20微米的平均粒徑(D50)。The epoxy resin composition according to item 3 of the scope of patent application, wherein the alumina has an average particle diameter (D50) of 1 to 10 micrometers, and the aluminum nitrate has an average particle diameter of 1 to 10 micrometers ( D50), and the boron nitrate has an average particle diameter (D50) of 5 μm to 20 μm. 如申請專利範圍第1項所述的環氧樹脂組成物,其中在所述環氧樹脂組成物中存在50重量%至95重量%的量的氧化鋁、硝酸鋁及硝酸硼中的所述至少一者。The epoxy resin composition according to item 1 of the patent application scope, wherein the at least one of alumina, aluminum nitrate, and boron nitrate is present in the epoxy resin composition in an amount of 50% to 95% by weight. One. 如申請專利範圍第1項所述的環氧樹脂組成物,包含: 0.5重量%至20重量%的所述環氧樹脂; 0.1重量%至13重量%的所述固化劑; 70重量%至95重量%的所述填料;以及 0.01重量%至2重量%的所述固化加速劑。The epoxy resin composition according to item 1 of the patent application scope, comprising: 0.5 to 20% by weight of the epoxy resin; 0.1 to 13% by weight of the curing agent; 70% to 95% by weight of the filler; and 0.01 to 2% by weight of the curing accelerator. 一種半導體裝置,使用如申請專利範圍第1項至第6項中任一項所述的用於包封半導體裝置的環氧樹脂組成物來包封。A semiconductor device is encapsulated using the epoxy resin composition for encapsulating a semiconductor device according to any one of claims 1 to 6 of the scope of patent application.
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