JP2867056B2 - Adhesive tape for semiconductor package - Google Patents
Adhesive tape for semiconductor packageInfo
- Publication number
- JP2867056B2 JP2867056B2 JP2039623A JP3962390A JP2867056B2 JP 2867056 B2 JP2867056 B2 JP 2867056B2 JP 2039623 A JP2039623 A JP 2039623A JP 3962390 A JP3962390 A JP 3962390A JP 2867056 B2 JP2867056 B2 JP 2867056B2
- Authority
- JP
- Japan
- Prior art keywords
- heat
- adhesive tape
- resistant
- semiconductor package
- adhesive layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/4826—Connecting between the body and an opposite side of the item with respect to the body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73215—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/831—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus
- H01L2224/83101—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus as prepeg comprising a layer connector, e.g. provided in an insulating plate member
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Die Bonding (AREA)
Description
【発明の詳細な説明】 （産業上の利用分野） 本発明は、半導体装置を構成するリードフレーム周辺
の部材間、例えば、リードピン、半導体チップ搭載用基
板、放熱板、半導体チップ自身等の接着を目的とした耐
熱性接着テープに関する。DETAILED DESCRIPTION OF THE INVENTION (Industrial Application Field) The present invention relates to bonding between members around a lead frame constituting a semiconductor device, for example, a lead pin, a semiconductor chip mounting substrate, a heat sink, a semiconductor chip itself, and the like. It relates to the intended heat-resistant adhesive tape.
（従来の技術） 従来、樹脂封止型半導体装置は、PDIP、QFP、PLCC等
に代表されるように、42アロイ又は銅アロイリードフレ
ーム上に、半導体チップをエポキシ系又はイミド系の銀
ペースト、或いは場合により半田ペースト等のダイボン
ディングペーストを用いてダイパッド上に固定し、金線
ワイヤーボンディング法又は銅線ワイヤーボンディング
法により半導体チップとリードフレームとの電気的接続
を行い、これら全体を樹脂等のモールド材によって封止
することにより製造されている。(Prior art) Conventionally, resin-encapsulated semiconductor devices, such as PDIP, QFP, PLCC, etc., have a semiconductor chip mounted on a 42 alloy or copper alloy lead frame by an epoxy or imide silver paste, Alternatively, in some cases, the semiconductor chip and the lead frame are electrically connected to each other by using a die bonding paste such as a solder paste or the like on a die pad by using a gold wire bonding method or a copper wire bonding method. It is manufactured by sealing with a mold material.
第４図は、従来の樹脂封止型半導体パッケージの一例
を示すもので、リードフレームのダイパッド２上に、ダ
イボンディングペースト３を介して半導体チップ１が搭
載され、その半導体チップ１とインナーリード４とが金
線ワイヤー５によって接続され、それら全体が樹脂６に
よって封止された構造を有している。FIG. 4 shows an example of a conventional resin-encapsulated semiconductor package. A semiconductor chip 1 is mounted on a die pad 2 of a lead frame via a die bonding paste 3, and the semiconductor chip 1 and inner leads 4 are shown. Are connected by a gold wire 5, and the whole is sealed with a resin 6.
ところで、近年種々の要求から、第１図〜第３図に示
されるような構造の樹脂封止型半導体パッケージが開発
され、一部は量産化されつつある。By the way, in recent years, due to various requirements, a resin-sealed semiconductor package having a structure as shown in FIGS.
即ち、第１図においては、耐熱性フィルム上に接着層
を有する片面接着テープ７により半導体チップ１とイン
ナーリードが固定され、そして半導体チップ１とインナ
ーリード４とが金線ワイヤー５によって接続され、全体
が樹脂６によって封止された構造を有している。また、
第２図においては、半導体チップ１とインナーリード４
とが、両面接着テープ８によって固定され、そして半導
体チップ１とインナーリード４とが金線ワイヤー５によ
って接続され、全体が樹脂６によって封止された構造を
有している。更にまた、第３図においては、放熱板９上
に半導体チップ１がダイボンディングペースト３によっ
て固定され、また両面接着テープ８によってインナーリ
ード４が固定されており、そして半導体チップ１とイン
ナーリード４とが金線ワイヤー５によって接続され、全
体が樹脂６によって封止された構造を有している。That is, in FIG. 1, the semiconductor chip 1 and the inner lead 4 are fixed by the single-sided adhesive tape 7 having an adhesive layer on the heat-resistant film, and the semiconductor chip 1 and the inner lead 4 are connected by the gold wire 5. The whole has a structure sealed with a resin 6. Also,
In FIG. 2, the semiconductor chip 1 and the inner leads 4 are shown.
Are fixed by a double-sided adhesive tape 8, and the semiconductor chip 1 and the inner lead 4 are connected by a gold wire 5, and the whole is sealed with a resin 6. Further, in FIG. 3, the semiconductor chip 1 is fixed on the heat radiating plate 9 by the die bonding paste 3 and the inner leads 4 are fixed by the double-sided adhesive tape 8. Are connected by a gold wire 5 and are entirely sealed by a resin 6.
（発明が解決しようとする課題） ところが、これら新しい型の樹脂封止型半導体パッケ
ージには、大容量半導体が使用されるため、発熱の問題
が発生している。従来、これら半導体パッケージに使用
される耐熱性の両面或いは片面接着テープにおいては、
被着物間の絶縁の問題から、エポキシ系樹脂やポリイミ
ド系樹脂等の有機質材料のが使用されている為、熱伝導
性が悪く、半導体パッケージの発生熱を放熱できないと
いう問題があった。(Problems to be Solved by the Invention) However, since a large-capacity semiconductor is used in these new types of resin-sealed semiconductor packages, there is a problem of heat generation. Conventionally, in the heat-resistant double-sided or single-sided adhesive tape used for these semiconductor packages,
Due to the problem of insulation between the adherends, an organic material such as an epoxy-based resin or a polyimide-based resin is used, so that the thermal conductivity is poor and the heat generated by the semiconductor package cannot be radiated.
本発明は、従来の技術における上記のような問題点に
鑑みてなされたものである。The present invention has been made in view of the above-described problems in the related art.
したがって、本発明の目的は、上記第１図ないし第３
図に記載のような接着テープを用いるタイプの樹脂封止
型半導体パッケージにおいて使用した場合に、発熱の問
題を解消し、高信頼性を保つことができる耐熱性接着テ
ープを提供することにある。Therefore, the object of the present invention is to
An object of the present invention is to provide a heat-resistant adhesive tape capable of solving the problem of heat generation and maintaining high reliability when used in a resin-sealed semiconductor package of the type using an adhesive tape as shown in the figure.
（課題を解決するための手段） 本発明者等は、上記のような問題点を解決するために
検討した結果、耐熱性接着テープの熱伝導性を向上させ
ることによって、上記の目的が達成されることを見出だ
し、本発明を完成するに至った。(Means for Solving the Problems) The present inventors have studied to solve the above problems, and as a result, the above object has been achieved by improving the thermal conductivity of the heat-resistant adhesive tape. It has been found that the present invention has been completed.
即ち、本発明は、耐熱性フィルムの片面又は両面に耐
熱性接着層を設けてなる半導体パッケージ用接着テープ
において、該耐熱性接着層が１〜150μｍの範囲の膜厚
を有し、かつフィラーとして粒径１μｍ以下のダイヤモ
ンド粉を５〜60重量％含有することを特徴とする。That is, the present invention provides an adhesive tape for a semiconductor package having a heat-resistant adhesive layer provided on one or both sides of a heat-resistant film, wherein the heat-resistant adhesive layer has a thickness of 1 to 150 μm, and as a filler. It is characterized by containing 5 to 60% by weight of diamond powder having a particle size of 1 μm or less.
次に本発明の接着テープを構成する各層について詳記
する。Next, each layer constituting the adhesive tape of the present invention will be described in detail.
（耐熱性フィルム） 厚さ５〜300μｍ、好ましくは12.5〜150μｍの、例え
ば、ポリイミド、ポリエーテルイミド、ポリフェニレン
サルファイド、ポリエーテルエーテルケトン、ポリパラ
バン酸、ポリエチレンテレフタレート等の耐熱性フィル
ムや、エポキシ樹脂−ガラスクロス、エポキシ樹脂−ポ
リイミド−ガラスクロス等の複合耐熱フィルムが使用さ
れる。(Heat-resistant film) A heat-resistant film having a thickness of 5 to 300 µm, preferably 12.5 to 150 µm, such as polyimide, polyetherimide, polyphenylene sulfide, polyetheretherketone, polyparabanic acid, or polyethylene terephthalate, or an epoxy resin-glass. A composite heat-resistant film such as cloth or epoxy resin-polyimide-glass cloth is used.
（耐熱性接着層） 耐熱性接着層は、耐熱性接着剤中に、フィラーとして
ダイヤモンド粉が分散されてなるものであって、耐熱性
接着剤としては、公知のもの、例えば、NBR系接着剤、
ポリエステル系接着剤、ポリイミド系接着剤、エポキシ
系接着剤を用いることができる。(Heat-resistant adhesive layer) The heat-resistant adhesive layer is formed by dispersing diamond powder as a filler in a heat-resistant adhesive, and is known as a heat-resistant adhesive, for example, an NBR-based adhesive. ,
A polyester-based adhesive, a polyimide-based adhesive, or an epoxy-based adhesive can be used.
これら接着剤中に分散させるダイヤモンド粉として
は、工業製品として市販されている、いわゆるダイヤモ
ンドダストが使用されるが、粒度１μｍ以下に分級した
ものが好適に使用される。また、ダイヤモンド粉の添加
量は、耐熱性接着層に対して５〜60重量％であり、特に
10〜30重量％の範囲に設定するのが好ましい。添加量が
５重量％よりも低くなると、熱伝導性の改善効果が小さ
くなり、また60重量％よりも多くなると、接着テープの
接着強度が低下し、かつラミネート等の加工性が悪くな
る。As the diamond powder to be dispersed in these adhesives, so-called diamond dust, which is commercially available as an industrial product, is used, and those classified to a particle size of 1 μm or less are preferably used. The amount of the diamond powder added is 5 to 60% by weight based on the heat-resistant adhesive layer.
It is preferably set in the range of 10 to 30% by weight. When the amount is less than 5% by weight, the effect of improving the thermal conductivity is reduced. When the amount is more than 60% by weight, the adhesive strength of the adhesive tape is reduced and the processability of laminating or the like is deteriorated.
耐熱性接着層は、上記耐熱性接着剤を所望により溶剤
に溶解した溶液中に、ダイヤモンド粉を分散させた接着
組成物を、上記耐熱性フィルム上に塗布し、乾燥するこ
とによって形成することができる。その場合、接着剤が
硬化型の場合には、塗布後の乾燥を、Ｂステージの半硬
化状態になるまで行えばよい。また、耐熱性接着層は、
乾燥後の膜厚が、１〜150μｍであるが、特に５〜50μ
ｍの範囲になるように形成するのが好ましい。The heat-resistant adhesive layer may be formed by applying an adhesive composition in which diamond powder is dispersed in a solution obtained by dissolving the above-mentioned heat-resistant adhesive in a solvent as desired, coating the heat-resistant film on the heat-resistant film, and drying. it can. In this case, if the adhesive is of a curable type, drying after application may be performed until the B stage is in a semi-cured state. In addition, the heat-resistant adhesive layer
The film thickness after drying is 1 to 150 μm, particularly 5 to 50 μm.
It is preferable to form them so as to be in the range of m.
さらにまた、上記のようにして形成された耐熱性接着
層は、熱伝導率が10-2（W/cm・Ｋ）以上であることが好
ましい。Furthermore, the heat-resistant adhesive layer formed as described above preferably has a thermal conductivity of 10 −2 (W / cm · K) or more.
（保護フィルム） 本発明の接着テープにおいては、必要に応じて、耐熱
性接着層の上に膜厚１〜200μｍ、好ましくは10〜100μ
ｍの保護フィルムを設けてもよい。保護フィルムを設け
ることにより、耐熱性接着層を保護してその表面の清浄
度を維持することができ、また、残留する溶剤の含有量
が変化するのを避けることができるので、接着テープを
保存する場合に、保護フィルムを設けるのが好ましい。(Protective Film) In the adhesive tape of the present invention, if necessary, a film thickness of 1 to 200 μm, preferably 10 to 100 μm is formed on the heat-resistant adhesive layer.
m may be provided. By providing a protective film, it is possible to protect the heat-resistant adhesive layer and maintain its surface cleanliness, and to prevent a change in the content of the remaining solvent, so that the adhesive tape can be stored. In this case, it is preferable to provide a protective film.
保護フィルムとして使用可能なものとしては、ポリプ
ロピレンフィルム、フッ素樹脂系フィルム、ポリエチレ
ンフィルム、ポリエチレンテレフタレートフィルム、紙
及び場合によってこれ等にシリコーン樹脂等で剥離性を
付与したものがあげられる。Examples of the protective film that can be used include a polypropylene film, a fluororesin film, a polyethylene film, a polyethylene terephthalate film, paper, and, in some cases, those having a releasability with a silicone resin or the like.
本発明において、これ等保護フィルムは、使用に際し
て剥離する必要があるため、その90゜ピール剥離強度が
0.01〜7gの範囲にあることが望ましい。何故ならば、剥
離強度が上記の範囲よりも低い場合には、接着テープ搬
送時に保護フィルムが簡単に剥離するなどの問題を生
じ、また上記範囲よりも大きい場合には、保護フィルム
が耐熱性接着層からきれいに剥がれず、作業性が悪い等
の問題を起こすからである。In the present invention, since these protective films need to be peeled at the time of use, their 90 ° peel peel strength is
Desirably, it is in the range of 0.01 to 7 g. If the peel strength is lower than the above range, there is a problem that the protective film is easily peeled off when the adhesive tape is transported, and if the peel strength is higher than the above range, the protective film is heat-resistant. This is because they do not peel off from the layer cleanly and cause problems such as poor workability.
（実施例） 以下、本発明を実施例によって詳記する。なお、配合
部数は全て重量部である。(Examples) Hereinafter, the present invention will be described in detail with reference to examples. All parts are by weight.
片面接着テープの作成例 接着剤として、低温硬化型エポキシ系接着剤（SG−EP
O、セメダイン（株）製）に、フィラーとして、粒径0.1
μｍのダイヤモンド粉（IRM、東名ダイヤモンド（株）
製）を、エポキシ系接着剤に対して40重量％添加し、サ
ンドミルで分散した。得られた接着剤組成物を、膜厚50
μｍの耐熱性ポリイミドフィルム（商品名：カプトン20
0H、東レデュポン社製）の上に乾燥後の膜厚が20μｍに
なるように塗布し、50℃で10分間乾燥してＢステージの
硬化状態の耐熱性接着層を形成し、接着テープを得た。Example of making a single-sided adhesive tape As an adhesive, a low-temperature curing type epoxy adhesive (SG-EP
O, manufactured by Cemedine Co., Ltd.)
μm diamond powder (IRM, Tomei Diamond Co., Ltd.)
Was added to the epoxy adhesive by 40% by weight and dispersed by a sand mill. The obtained adhesive composition was coated with a film thickness of 50.
μm heat-resistant polyimide film (trade name: Kapton 20
0H, manufactured by Toray Dupont Co., Ltd.) so that the film thickness after drying becomes 20 μm, and then dried at 50 ° C. for 10 minutes to form a heat-resistant adhesive layer in a B-stage cured state to obtain an adhesive tape. Was.
試験例 また、硬化後の熱伝導性について調査する為に、上記
と同様の低温硬化型エポキシ系接着剤に、フィラーとし
て、粒径0.1μｍのアルミナ（AL−160SG−１、昭和電工
（株）製）粒径0.1μｍのダイヤモンド粉（IRM、東名ダ
イヤモンド（株）製）を、第１図に示す量で配合し、サ
ンドミルで分散した後、上記実施例と同様にして耐熱性
ポリイミドフィルムの上に塗布し、次いで熱風循環式乾
燥機中で50℃、12時間の乾燥条件の下に乾燥させ、完全
硬化状態の耐熱性接着層を形成した。この耐熱性接着層
を、所定のサイズに取り、試験サンプルNo.1〜No.5とし
た。Test Example In addition, in order to investigate the thermal conductivity after curing, the same low-temperature curing type epoxy adhesive as described above was used as a filler with alumina having a particle size of 0.1 μm (AL-160SG-1, Showa Denko KK) 1) Diamond powder (IRM, manufactured by Tomei Diamond Co., Ltd.) having a particle size of 0.1 μm was blended in the amount shown in FIG. 1 and dispersed by a sand mill. And then dried in a hot air circulating drier under drying conditions at 50 ° C. for 12 hours to form a heat-resistant adhesive layer in a completely cured state. This heat-resistant adhesive layer was taken to a predetermined size, and was used as test samples No. 1 to No. 5.
これらの試験サンプルについて、レーザーフラッシュ
法熱定数測定装置TC−3000RNCを用いて熱伝導率を測定
した。その結果を第１表に示す。The thermal conductivity of each of these test samples was measured using a laser flash method thermal constant measuring device TC-3000RNC. Table 1 shows the results.
（発明の効果） 本発明の接着テープは、上記の実施例における比較か
ら明らかなように、膜厚１〜150μｍの耐熱性接着層中
に、フィラーとして粒径１μｍ以下のダイヤモンド粉を
５〜60重量％含有させたから、熱伝導性に優れ、樹脂封
止型半導体パッケージに使用する際に、高温での処理に
おいても、高信頼性を保つことが可能になる。 (Effect of the Invention) As is clear from the comparison in the above Examples, the adhesive tape of the present invention contains 5 to 60 μm of diamond powder having a particle size of 1 μm or less as a filler in a heat-resistant adhesive layer having a thickness of 1 to 150 μm. Since it is contained by weight%, it has excellent thermal conductivity, and can maintain high reliability even in high-temperature processing when used in a resin-sealed semiconductor package.
【図面の簡単な説明】 第１図ないし第３図は、それぞれ接着テープが使用され
るタイプの樹脂封止型半導体パッケージの断面図、第４
図は、接着テープを使用しない従来の樹脂封止型半導体
パッケージの断面図である。 １……半導体チップ、２……ダイパッド、３……ダイボ
ンディングペースト、４……インナーリード、５……金
線ワイヤー、６……樹脂、７……片面接着テープ、８…
…両面接着テープ、９……放熱板。BRIEF DESCRIPTION OF THE DRAWINGS FIGS. 1 to 3 are sectional views of a resin-sealed semiconductor package of the type using an adhesive tape, respectively.
The figure is a cross-sectional view of a conventional resin-sealed semiconductor package that does not use an adhesive tape. DESCRIPTION OF SYMBOLS 1 ... Semiconductor chip, 2 ... Die pad, 3 ... Die bonding paste, 4 ... Inner lead, 5 ... Gold wire, 6 ... Resin, 7 ... Single-sided adhesive tape, 8 ...
... double-sided adhesive tape, 9 ... heat sink.
───────────────────────────────────────────────────── フロントページの続き (58)調査した分野(Int.Cl.6，ＤＢ名) H01L 21/52──────────────────────────────────────────────────の Continued on the front page (58) Field surveyed (Int.Cl. 6 , DB name) H01L 21/52
Claims (2)
接着層を設けてなる半導体パッケージ用接着テープにお
いて、該耐熱性接着層が１〜150μｍの範囲の膜厚を有
し、かつフィラーとして粒径１μｍ以下のダイヤモンド
粉を５〜60重量％含有することを特徴とする半導体パッ
ケージ用接着テープ。1. An adhesive tape for a semiconductor package having a heat-resistant adhesive layer provided on one or both sides of a heat-resistant film, wherein the heat-resistant adhesive layer has a thickness in the range of 1 to 150 μm, and has a particle size as a filler. An adhesive tape for a semiconductor package, comprising 5 to 60% by weight of diamond powder having a diameter of 1 μm or less.
Ｋ）以上であることを特徴とする特許請求の範囲第１項
に記載の半導体パッケージ用接着テープ。2. The heat-resistant adhesive layer has a thermal conductivity of 10 −2 (W / cm ·
K) The adhesive tape for a semiconductor package according to claim 1, wherein the adhesive tape is at least K).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2039623A JP2867056B2 (en) | 1990-02-22 | 1990-02-22 | Adhesive tape for semiconductor package |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2039623A JP2867056B2 (en) | 1990-02-22 | 1990-02-22 | Adhesive tape for semiconductor package |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH03244137A JPH03244137A (en) | 1991-10-30 |
| JP2867056B2 true JP2867056B2 (en) | 1999-03-08 |
Family
ID=12558235
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2039623A Expired - Fee Related JP2867056B2 (en) | 1990-02-22 | 1990-02-22 | Adhesive tape for semiconductor package |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2867056B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20190070200A (en) * | 2017-12-12 | 2019-06-20 | 삼성에스디아이 주식회사 | Epoxy resin composition for encapsulating semiconductor device and semiconductor device encapsulated using the same |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102004034550A1 (en) | 2004-07-16 | 2006-02-09 | Siemens Ag | Heat conducting electrical insulating tape and particularly glowing protection tape for use with electrical motors |
| TWI442595B (en) * | 2007-07-25 | 2014-06-21 | Everlight Electronics Co Ltd | Light emitting diode device |
-
1990
- 1990-02-22 JP JP2039623A patent/JP2867056B2/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20190070200A (en) * | 2017-12-12 | 2019-06-20 | 삼성에스디아이 주식회사 | Epoxy resin composition for encapsulating semiconductor device and semiconductor device encapsulated using the same |
| WO2019117452A1 (en) * | 2017-12-12 | 2019-06-20 | 삼성에스디아이 주식회사 | Epoxy resin composition for sealing semiconductor device and semiconductor device sealed using same |
| KR102137550B1 (en) * | 2017-12-12 | 2020-07-24 | 삼성에스디아이 주식회사 | Epoxy resin composition for encapsulating semiconductor device and semiconductor device encapsulated using the same |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH03244137A (en) | 1991-10-30 |
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