JP2001144140A - Method of manufacturing semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a method that efficiently manufactures a high reliability product by preventing the generation of voids during the manufacturing of a semiconductor device for sealing resin. SOLUTION: In this manufacturing method for a semiconductor device an adhesive thin film layer on the circuit side of a semiconductor wafer, at which a circuit is formed on the surface and the semiconductor wafer is cut and separated into an individual chip every circuit. The individual chip is loaded on the prescribed position of a substrate for mounting a chip via the adhesive thin film layer, and the individual chip is bonded and fixed to the substrate for mounting the chip, securing the continuity between the individual chip and the substrate for mounting the chip.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a semiconductor device, and more particularly to a method of efficiently manufacturing a highly reliable product by preventing generation of voids in manufacturing a resin-sealed semiconductor device. .

[0002]

2. Description of the Related Art Generally, a semiconductor device is sealed with a resin in order to protect a circuit surface. Conventionally, such a resin-sealed semiconductor device has been manufactured by mounting individual IC chips individually on a lead frame and then sealing each one with a resin using a mold.

[0003] More specifically, the following method is currently being implemented. (1) The IC chip and the lead frame are connected by using a gold wire or the like, and then, resin sealing is performed. (2) The IC chip is mounted on the lead frame on which the conductive projections are formed, and the IC chip and the lead frame are connected via the conductive projections, followed by resin sealing. (3) The IC chip and the lead frame are connected via an anisotropic conductive film or an anisotropic conductive paste, and then are sealed with a resin.

However, in the above method (1), since the molding must be performed including the gold wire, there is a problem that the semiconductor device is too large compared to the chip size, and it is difficult to use the semiconductor device in a small device such as a mobile phone. there were. For this reason, the method (2) or (3), which allows the size of the semiconductor device to be substantially equal to the chip size, has been used.

[0005] However, in the method (2), there is a space between the IC chip and the lead frame by the height of the conductive projection. May not penetrate sufficiently and voids may occur. Therefore, it is necessary to fill an insulating adhesive between the IC chip and the lead frame before resin sealing.

In the above method (3), it is necessary to attach an anisotropic conductive film or apply an anisotropic conductive paste to a minute IC chip, which is also complicated in the work process. In particular, it is difficult to apply a constant amount of the anisotropic conductive paste, and the amount of the paste differs for each product, which may cause variations in product characteristics.

[0007]

SUMMARY OF THE INVENTION The present invention has been made in view of the above-mentioned prior art, and is intended to prevent the occurrence of voids during the production of a resin-encapsulated semiconductor device and to provide a highly reliable product. It is an object of the present invention to provide a method capable of efficiently producing a.

[0008]

According to the present invention, there is provided a method of manufacturing a semiconductor device, comprising: forming an adhesive thin film layer on a circuit surface of a semiconductor wafer having a circuit formed on a surface;
Cut and separated into individual chips for each circuit, place the individual chips at predetermined positions on the chip mounting substrate via the adhesive thin film layer, and conduct the electric conduction between the individual chips and the chip mounting substrate. The individual chips are bonded and fixed to the chip mounting substrate while ensuring the above conditions.

In the present invention, before cutting and separating the semiconductor wafer into individual chips, the back surface of the semiconductor wafer may be ground while protecting the circuit surface of the semiconductor wafer with the adhesive thin film layer. Further, the adhesive thin film layer has a peelable sheet on one side, and the adhesive thin film layer is attached to a circuit surface of a semiconductor wafer through a surface of the adhesive thin film layer on which the peelable sheet is not formed. This makes it possible to form the adhesive thin film layer on the circuit surface of the semiconductor wafer, and to peel off the peelable sheet from the adhesive thin film layer before placing the individual chips on the chip mounting substrate.

Further, in the present invention, the adhesive thin film layer may be formed of an anisotropic conductive adhesive. Further, the adhesive thin film layer may be made of an insulating adhesive. In this case, an adhesive thin film layer having a conductive projection on a chip circuit and / or a chip mounting substrate is used. The thin film layer can be fluidized by heating to secure conduction between the chip and the chip mounting substrate via the conduction protrusion.

According to the method of manufacturing a semiconductor device according to the present invention, it is possible to prevent voids from occurring at the time of manufacturing the resin-encapsulated semiconductor device and efficiently manufacture a highly reliable product.

[0012]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, the present invention will be described more specifically with reference to the drawings. In the first method of manufacturing a semiconductor device according to the present invention, first, FIG.
As shown in FIG. 1, a semiconductor wafer 1 having a circuit formed on its surface
The adhesive thin film layer 12 (or 22) is formed on the circuit surface.

Examples of the semiconductor wafer 1 include a conventionally used silicon semiconductor wafer and a gallium / arsenic semiconductor wafer, but are not limited thereto, and various semiconductor wafers can be used. The formation of the circuit on the wafer surface can be performed by various methods including a conventionally widely used method such as an etching method and a lift-off method. In a circuit formation process of a semiconductor wafer,
A predetermined circuit is formed.

In this circuit forming step, an oxide film may be formed on the back surface of the wafer, and such an oxide film is removed by grinding the back surface of the wafer as described later, if necessary. The adhesive thin film layer is made of an anisotropic conductive adhesive or an insulating adhesive. Adhesive thin film layer 1 shown in FIG.
2 is made of an anisotropic conductive adhesive (hereinafter, this case is abbreviated as “anisotropic conductive adhesive layer 12”). Anisotropic conductive adhesive is an adhesive containing conductive particles in a binder polymer.Before pressing, the conductive particles in the adhesive thin film layer are present in the binder resin within a range where they do not come into contact with each other and adhere. When the chip and the chip mounting substrate are pressure-bonded through the conductive thin film layer, the conductive protrusions as electrodes compress the adhesive thin film layer, and the conductive particles contact only in the thickness direction of the adhesive thin film layer, It develops anisotropic conductivity.

The material used as the binder resin is
Resins used as ordinary adhesives are used without any particular limitation, and may be thermosetting or thermoplastic. Further, a so-called pressure-sensitive adhesive which is pressure-sensitive adhesive at the time of application and is cured by heating later may be used. As the thermosetting binder resin, for example, an epoxy resin, an acrylic resin, a polyimide resin, a phenol resin, a urea resin, a melamine resin, a resorcinol resin, or the like is used, and preferably, an epoxy resin or an acrylic resin is used.

Examples of the thermoplastic binder resin include polyester resin, polyvinyl acetate, polyvinyl alcohol, polyvinyl butyral, polyvinyl chloride, polymethacrylate, polyacrylate, polystyrene, and the like.
Polyethylene, polyamide, cellulose, polyisobutylene, polyvinyl ether, polyimide resin, various hot melt adhesives and the like are used, and polyester resin and polyimide resin are preferably used.

Examples of the adhesive include a mixture of a binder resin having a pressure-sensitive adhesive property at room temperature and a thermosetting resin. Examples of the binder resin having pressure-sensitive adhesive properties at room temperature include acrylic resin, polyester resin, polyvinyl ether, urethane resin, polyamide and the like. Examples of the thermosetting resin include resins similar to the above-described thermosetting binder resins, and those having a relatively lower molecular weight than the binder resin can be used. Further, in order to control the releasability from a releasable sheet to be described later, it is preferable to blend an ultraviolet curable resin such as a urethane acrylate oligomer in the adhesive. When an ultraviolet curable resin is blended, the peelable sheet adheres well to the adhesive thin film layer before the ultraviolet irradiation, and becomes easily peeled after the ultraviolet irradiation.

Materials used as the conductive particles are gold,
Powders or fibrous materials of metals or alloys such as silver, copper, nickel, and aluminum, and fibrous materials, carbon black, and conductive polymers such as polyaniline and polypyrrole are used. Each of these materials may be used alone, or a plurality of them may be used in combination. Further, the shape of the powder or the like may be formed of a conductive material alone, or may be formed by coating or plating a resin such as styrene or acrylic. The size of the powder or fibrous body is 1 to 20
It is preferably about μm.

Such conductive particles are used in an amount of about 1 to 500 parts by weight based on 100 parts by weight of the binder resin. The thickness of the anisotropic conductive adhesive layer 12 is preferably about 1 to 100 μm, particularly preferably 1 to 100 μm.
It is about 0 to 50 μm. The adhesive thin film layer 22 shown in FIG.
Is composed of an insulating adhesive (hereinafter, this case is abbreviated as “insulating adhesive layer 22”).

The insulating adhesive is the same as the above-described anisotropic conductive adhesive except that it does not contain conductive particles, and may be either a thermosetting one or a thermoplastic one. Further, it may be made of an adhesive. That is, the thermosetting insulating adhesive layer 22 contains the above-described thermosetting binder resin as a main component and does not include conductive particles. It contains a thermoplastic binder resin as a main component and does not contain conductive particles.

The adhesive adhesive layer 22 has the above-mentioned adhesive as a main component and does not contain conductive particles. The thickness of the insulating adhesive layer 22 is preferably about 1 to 200 μm, particularly preferably 10 to 200 μm.
It is about 70 μm. In the present invention, as shown in FIG. 1 or FIG. 4, a peelable sheet 11 or 21 may be attached to one surface of the adhesive thin film layer 12 or 22.

The adhesive thin film layer is used in a form in which a peelable sheet is laminated in a predetermined step, and is then transferred from the peelable sheet to a wafer or a chip. The peelable sheet is used for reinforcement, for example, when the adhesive thin film layer is attached to the wafer so as not to be deformed by tension. In addition, the surface of the adhesive thin film layer can be protected during the grinding step or the cutting / separating step.

As the releasable sheet, various thin layer products conventionally used as a substrate such as an adhesive tape are used without any particular limitation. Examples thereof include paper, metal foil, polyethylene terephthalate, polyethylene, and polystyrene. Synthetic resin films of polypropylene, nylon, urethane, polyvinylidene chloride, polyvinyl chloride and the like are used. Further, a laminate of these may be used.

In the present invention, in order to peel the adhesive thin film layer from the surface of the peelable sheet and to facilitate transfer to a chip or the like,
The surface of these releasable sheets may be subjected to a release treatment with a silicone resin or an alkyd resin, if necessary. The surface tension of such a peelable sheet 11 or 21 is 40
It is preferably not more than mN / m, more preferably in the range of 20 to 40 mN / m, and particularly preferably in the range of 30 to 35 mN / m.

If the surface tension of the releasable sheet is greater than 40 mN / m, the adhesiveness of the adhesive thin film layer to the releasable sheet will increase, and transfer to the chip may not be possible. Meanwhile, 20
If it is less than mN / m, the grinding water may enter between the peelable sheet and the adhesive thin film layer in the grinding process and damage the wafer,
Further, depending on the properties of the adhesive thin film layer, the adhesive thin film layer may not be formed on the peelable sheet.

The peelable sheet 11 or 21 as described above
Is usually from 5 to 300 μm, preferably from 10 to 300 μm.
２００200 μm. In the method of manufacturing a semiconductor device according to the present invention, a step of forming an adhesive thin film, a step of cutting and separating, and a step of bonding and fixing chips are performed. Further, a back surface grinding step may be performed if desired.

The formation of the adhesive thin film layer 12 or 22 on the semiconductor wafer 1 is performed by sticking with a sticking device. The pressure at the time of sticking is appropriately set according to the sticking method of the sticking device (rubber roller type, vacuum contact type), but if the pressing condition is too weak, the adhesive thin film layer may not adhere to the wafer, If too strong, the wafer may be damaged.

The application temperature depends on the properties of the adhesive thin film layer used. Normally, the plasticization temperature of the binder resin is 18
Temperatures below 0 ° C. are preferred. When an adhesive is used, it can be stuck at room temperature. If the sticking temperature is too high, the wafer may be warped after the wafer is ground. In the case where the irregularities on the circuit surface of the wafer are large such that the height of the conductive projection provided on the circuit surface of the wafer is 50 μm or more, the bonding is performed under stronger conditions than the standard pressing conditions or at a higher bonding temperature. It is preferable that the wafer be brought into close contact with the wafer circuit surface.

In the present invention, various necessary steps such as cutting and separating the semiconductor wafer 1 are performed with the adhesive thin film layer 12 or 22 adhered to the circuit surface of the wafer 1. Also,
Prior to the cutting and separation, the back surface of the semiconductor wafer 1 may be ground if necessary. The backside grinding step of the semiconductor wafer 1 is a step of removing an oxide film formed on the backside of the wafer during circuit formation and grinding the wafer to a predetermined thickness. The back surface grinding can be performed by a conventionally known method such as a grinding device. In the present invention, the adhesive thin film layer also functions as a protective sheet for the wafer circuit surface when grinding the back surface.

Next, the wafer is cut and separated. The wafer is cut and separated using a normal dicing apparatus. At this time, dicing tape is adhered to the back surface of the wafer, and the wafer is fixed to a circular frame via the dicing tape to perform dicing. Subsequently, the chips cut and separated using a pickup device or a chip bonder are individually collected in a chip tray or the like.

Through such required steps, a chip 2 having an adhesive thin film layer formed on a circuit surface is obtained as shown in FIG. 2 or FIG. In the present invention, the adhesive thin film layer is
When using a releasable sheet, apply the adhesive composition on the release surface of the releasable sheet, or dry if necessary,
After being cast into a thin film, it is formed by laminating release sheets. When a peelable sheet is not used, it is manufactured by cast molding or the like.

When a peelable sheet is laminated on the adhesive thin film layer, the peelable sheet is peeled from the adhesive thin film layer before the cut and separated individual chips are placed on the chip mounting substrate. You. As a method of peeling the peelable sheet from the adhesive thin film layer, a wide pressure-sensitive adhesive sheet is attached to the entire surface of the peelable sheet and then peeled off at an acute angle. The peeling of the releasable sheet is preferably performed after cutting and separating, but may be performed before cutting and separating.

Next, in the method of manufacturing a semiconductor device according to the present invention, the chip 2 is mounted on the chip mounting substrate 30 via the adhesive thin film layer, and the chip 2 is fixed (FIG. 3 or FIG. 3). See FIG. 6). A predetermined circuit is formed on the surface of the chip 2, and the chip mounting substrate 30 is further formed on the circuit surface.
And an electrode for conducting with the electrode. The electrode is preferably made of a projection (conduction projection 31) made of a conductive material such as gold, copper, or solder.
Usually, it is about 10 to 100 μm. An insulating coating is formed on the circuit surface of the chip 2 other than the electrodes.

The chip mounting substrate 30 has a circuit made of a conductive material such as copper foil laminated on an insulating and heat-resistant sheet material such as polyimide. This circuit, as shown in FIG. 8, has an end facing the electrode of the chip,
It is composed of a plurality of wirings connecting the electrode ends for conducting with an external device. When an insulating adhesive is used for the adhesive thin film layer, a conductive projection 31 ′ is attached to the end of the chip opposite to the electrode.
Is preferably provided. The protrusions are made of a conductive material such as gold, copper, or solder similarly to the protrusions on the chip, and the height and diameter thereof are usually about 10 to 100 μm.

When the adhesive thin film layer is made of an anisotropic conductive adhesive, after the chip 2 is mounted on the chip mounting substrate 30,
By performing pressure bonding, conductivity in the thickness direction of the anisotropic conductive adhesive layer 12 is developed, and conduction between the chip 2 and the chip mounting substrate 30 is ensured. In this case, the chip 2 and the chip mounting substrate 30 may have both the conductive projections 31 and 31 ′, or may have only one of them. FIG. 3 shows an example in which a chip 2 having a conductive projection 31 is used.

When the anisotropically conductive adhesive layer 12 is made of a thermosetting anisotropically conductive adhesive or an adhesive-type anisotropically conductive adhesive, the chip 2 is attached to the anisotropically conductive adhesive. Adhesive layer 1
After being placed on the chip mounting substrate 30 through the substrate 2, the chip 2 is fixed by heating to a temperature higher than the curing temperature of the anisotropic conductive adhesive. When the anisotropic conductive adhesive layer 12 is made of a thermoplastic anisotropic conductive adhesive, the chip 2 is placed on the chip mounting substrate 30 via the thermoplastic anisotropic conductive adhesive layer 12. After mounting, the chips are fixed by thermocompression bonding.

When the adhesive thin film layer 12 is made of an insulating adhesive, a chip having a conductive projection 31 on a circuit or a conductive projection 31 'is used as the chip 2. The chip mounting substrate 30 is used.
Of course, these may be used in combination. FIG. 6 shows an example in which the chip 2 having the conductive projections 31 and the chip mounting substrate 30 having the conductive projections 31 'are used in combination.

In this case, the insulating adhesive layer 2 is formed on the circuit surface.
The chip 2 to which the pattern 2 has been transferred is placed on the chip mounting substrate 30 having the conductive projections 31 and 31 ′ via the insulating adhesive layer 22. At this time, the conduction between the chip 2 and the chip mounting substrate 30 has not been established, so that the insulating adhesive 22 is fluidized and the conduction protrusions 31 and 31 ′ are formed.
Is connected to the chip 2 and the chip mounting substrate 30 through
After the conduction is secured, the chip 2 is fixed.

When the insulating adhesive layer 22 is made of a thermosetting insulating adhesive or a pressure-sensitive adhesive type insulating adhesive, the chip 2 is mounted via the insulating adhesive layer 22. After being placed on the substrate 30 for heating, the insulating adhesive is heated so as not to be hardened and fluidized, and the conductive protrusions 3
After securing the conduction between the chip 2 and the chip mounting substrate 30 via 1, 31 ′, the chip is fixed by heating to a temperature higher than the curing temperature of the insulating adhesive.

When the insulating adhesive layer 22 is made of a thermoplastic insulating adhesive, the chip 2 is placed on the chip mounting substrate 30 via the thermoplastic insulating adhesive. Then, the thermoplastic insulating adhesive is heated and fluidized to secure conduction between the chip 2 and the chip mounting substrate 30 via the conduction protrusions 31 and 31 ′. The chip is fixed by cooling to below the plasticizing temperature of the insulating adhesive.

The bonding between the chip 2 and the chip mounting substrate 30 can be performed by a flip chip bonder or the like. It is preferable that the flip chip bonder can set the heating condition and the pressing condition with high accuracy. According to such a method of manufacturing a semiconductor device according to the present invention, the chip 2 and the chip mounting substrate 30 can be fixed in a tight contact state without generating a space. And a highly reliable semiconductor device can be obtained.

As the resin used for resin sealing, various thermosetting resins conventionally used for resin sealing of semiconductor devices are used. As such a thermosetting resin, specifically, a cresol novolak type epoxy, a naphthalene type epoxy, a biphenyl type epoxy or an aromatic polyfunctional epoxy as a main raw material, a commonly used curing agent such as phenol novolak and silica , Silicone, carbon, a resin mixed with a filler and the like are preferably used. The conditions for heat curing are appropriately determined according to the type of thermosetting resin used.

[0043]

According to the method of manufacturing a semiconductor device according to the present invention as described above, voids can be prevented from occurring at the time of manufacturing a resin-sealed semiconductor device, and a highly reliable product can be manufactured efficiently.

[0044]

EXAMPLES The present invention will be described below with reference to examples, but the present invention is not limited to these examples. The conduction evaluation of the semiconductor device was performed as follows. As a chip for evaluation, the size shown in FIG. 7 is 3 mm × 5 mm.
Then, an evaluation dummy chip provided with four gold bumps (conduction projections) having a diameter of 90 μm and a height of 30 μm is used.
The two bumps form a set and are electrically connected by gold wires. Therefore, a large number of dummy circuits corresponding to the above chips are provided on the wafer.

As the chip mounting substrate, a substrate having a wiring pattern corresponding to the position of the bump shown in FIG. 8 is used as an evaluation substrate.

[0046]

Example 1 10 parts by weight of an acrylic resin as a binder resin, 10 parts by weight of a urethane acrylate oligomer, 0.3 parts by weight of 2,2-dimethoxy-2-phenylacetone, 105 parts by weight of an epoxy resin, and dicyandiamide 2 .12 parts by weight, 5 parts by weight of acrylic rubber fine particles,
An adhesive composition comprising 2 parts by weight of an aromatic polyisocyanate is applied to a polyethylene film (thickness: 100 μm) having a surface tension of 35 mN / m as a releasable sheet and dried,
An adhesive tape having an insulating adhesive layer having a thickness of 60 μm was obtained, and this was used as an insulating adhesive thin film layer having a peelable sheet.

The above-mentioned adhesive thin film layer is pressure-bonded to a circuit surface of a semiconductor wafer (6 inches, thickness: 625 μm) having the above-mentioned circuit pattern at normal temperature (tape attaching device: manufactured by Lintec Corporation).
Adwill RAD-3500 used). The back side of the semiconductor wafer is ground (grinding device: DFG-840, manufactured by Disco) to a thickness of 300 μm, and then the dicing tape (Adwi
ll G-19, manufactured by Lintec Co., Ltd., and cut and separated for each circuit pattern using a dicing apparatus (manufactured by Disco, DAD-2H / 6T) to obtain chips.

The circuit surface side is irradiated with ultraviolet light (ultraviolet irradiation device:
Lintec, Adwill RAD 2000m / 6), then apply a strong adhesive tape on the peelable sheet on the adhesive thin film layer, and peel it off to remove the peelable sheet on the adhesive thin film layer. Was removed to leave an adhesive thin film layer on the circuit surface of the chip. The obtained chips were picked up and stored in a chip tray.

Next, a flip chip bonder (FB30T-M, manufactured by Kyushu Matsushita Electric Industrial Co., Ltd.) was mounted on the evaluation board. At the time of mounting, the stage temperature was 60 ° C., the head temperature was 180 ° C., the load was 20 N, and the time was 60 seconds.
After mounting, the substrate was kept in an oven at 150 ° C. for 60 minutes to completely cure the adhesive layer. The resistance value between the terminals was measured using a low resistivity meter (Loresta-GP MCP-T600, manufactured by Mitsubishi Chemical Corporation), and continuity between ab and cd and insulation between other terminals were confirmed.

[0050]

Example 2 A flake silver powder having an average particle diameter of 6 to 10 μm was added to an adhesive composition comprising 10 parts by weight of an acrylic resin, 80 parts by weight of an epoxy resin, and 2 parts by weight of dicyandiamide, with a resin solid content of 100%. By adding 10 parts by weight to the parts by weight, an anisotropic conductive adhesive composition was obtained. The obtained adhesive composition is applied to a polyethylene film (thickness: 100 μm) having a surface tension of 35 mN / m as a peelable sheet and dried,
An adhesive tape having an anisotropic conductive adhesive layer having a thickness of 40 μm was obtained, and this was used as an adhesive thin film layer having a peelable sheet.

In the same manner as in Example 1, the adhesive thin film layer was pressure-bonded to a circuit surface of a semiconductor wafer (6 inches, thickness: 625 μm) having the above-mentioned circuit pattern at normal temperature. Further, in the same manner as in Example 1, the back surface of the semiconductor wafer was ground to a thickness of 300 μm. Thereafter, a dicing tape was attached to the ground surface, and cut and separated for each circuit pattern to obtain a chip. Then, a strong adhesive tape was stuck on the polyethylene film of the adhesive tape, and by peeling it, the polyethylene film of the adhesive tape was peeled off, and the adhesive layer was left on the circuit surface of the chip. . The chips were picked up and stored in a chip tray.

Next, a flip chip bonder was used to mount on the evaluation board. During mounting, the stage temperature is 60 ° C, the head temperature is 130 ° C, the load is 20N, and the time is 6
0 seconds. After mounting, the substrate was kept in an oven at 150 ° C. for 60 minutes to completely cure the adhesive layer. The resistance value between each terminal was measured using a low resistivity meter, and continuity between ab and cd and insulation between other terminals were confirmed.

[0053]

Example 3 A thermoplastic polyimide resin (Tg = 115 ° C.) was applied to a treated surface of a polyethylene naphthalate film (thickness: 25 μm; melting point: 272 ° C .; surface tension: 34 mN / m) which had been subjected to release treatment with an alkyd-based release agent as a release sheet. After applying an adhesive consisting of Ube Industries, Ltd.), it is dried and has a thickness of 60 μm.
A sheet having an adhesive thin film layer made of an insulating adhesive was prepared.

In the same manner as in Example 1, the adhesive thin film layer was pressure-bonded to a circuit surface of a semiconductor wafer (6 inches, thickness: 625 μm) having the above-mentioned circuit pattern at normal temperature. Further, in the same manner as in Example 1, the back surface of the semiconductor wafer was ground to a thickness of 300 μm. Thereafter, a dicing tape was attached to the ground surface, and cut and separated for each circuit pattern to obtain a chip. Then, a strong adhesive tape is stuck on the polyethylene naphthalate film on the adhesive thin film layer, and the polyethylene naphthalate film on the adhesive thin film layer is peeled off by peeling off the adhesive tape. The layer was left. The obtained chips were picked up and stored in a chip tray.

Then, using a flip chip bonder, the chip was mounted on the evaluation board. At the time of mounting, the stage temperature was 150 ° C., the head temperature was 180 ° C., the load was 20 N, and the time was 60 seconds. The resistance value between each terminal was measured using a low resistivity meter, and continuity between ab and cd and insulation between other terminals were confirmed.

[0056]

Example 4 Bonding consisting of 90 parts by weight of a solid epoxy resin (epoxy equivalent: 3000 to 5000) at room temperature, 10 parts by weight of epoxy resin liquid at room temperature (epoxy equivalent: 184 to 194), and 2 parts by weight of dicyandiamide. The agent composition was diluted with a solvent, applied to the release sheet used in Example 3, and then dried to prepare a sheet having a 60 μm-thick insulating adhesive thin film layer.

In the same manner as in Example 1, the adhesive thin film layer was pressure-bonded to a circuit surface of a semiconductor wafer (6 inches, thickness: 625 μm) having the above-mentioned circuit pattern at normal temperature. Further, in the same manner as in Example 1, the back surface of the semiconductor wafer was ground to a thickness of 300 μm. Thereafter, a dicing tape was attached to the ground surface, and cut and separated for each circuit pattern to obtain a chip. Next, a strong adhesive tape is stuck on the polyethylene naphthalate film on the adhesive thin film layer, and by peeling it off, the polyethylene naphthalate film on the adhesive thin film is peeled off, and the adhesive thin film is applied to the circuit surface of the chip. It was left.
The obtained chips were picked up and stored in a chip tray.

Next, using a flip chip bonder, the circuit board was mounted on the evaluation board. During mounting, the stage temperature is 60 ° C, the head temperature is 130 ° C, the load is 20N, and the time is 6
0 seconds. After mounting, the substrate was kept in an oven at 150 ° C. for 60 minutes to completely cure the adhesive layer. The resistance value between each terminal was measured using a low resistivity meter, and continuity between ab and cd and insulation between other terminals were confirmed.

[Brief description of the drawings]

FIG. 1 schematically shows the steps of the manufacturing method according to the present invention.

FIG. 2 shows an outline of the steps of the manufacturing method according to the present invention.

FIG. 3 shows an outline of the steps of the manufacturing method according to the present invention.

FIG. 4 shows an outline of the steps of another manufacturing method according to the present invention.

FIG. 5 shows an outline of the steps of another manufacturing method according to the present invention.

FIG. 6 shows an outline of the steps of another manufacturing method according to the present invention.

FIG. 7 shows a plan view of an evaluation chip used in an example of the present invention.

FIG. 8 shows a plan view of an evaluation substrate used in an example of the present invention.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 ... Semiconductor wafer, 2 ... Chip, 11 ... Peelable sheet,
12: adhesive thin film layer (anisotropic conductive adhesive layer), 21: peelable sheet, 22: adhesive thin film layer (insulating adhesive layer),
30: chip mounting substrate, 31, 31 ': conductive projection

Claims (5)

[Claims] 1. An adhesive thin film layer is formed on a circuit surface of a semiconductor wafer having a circuit formed on its surface, and the semiconductor wafer is cut and separated into individual chips for each circuit, and the individual chips are bonded to each other. Placed on a predetermined position of the chip mounting substrate via the conductive thin film layer, and the individual chip is bonded and fixed to the chip mounting substrate while ensuring conduction between the individual chip and the chip mounting substrate. A method for manufacturing a semiconductor device, comprising: 2. The semiconductor wafer according to claim 1, wherein the back surface of the semiconductor wafer is ground while protecting the circuit surface of the semiconductor wafer with the adhesive thin film layer before cutting and separating the semiconductor wafer into individual chips. Of manufacturing a semiconductor device. 3. The adhesive thin film layer has a peelable sheet on one side, and the adhesive thin film layer is connected to a circuit surface of a semiconductor wafer through a surface of the adhesive thin film layer on which the peelable sheet is not formed. To form an adhesive thin film layer on the circuit surface of the semiconductor wafer, and to separate the chip from the adhesive thin film layer before placing the individual chips on the chip mounting substrate. The method for manufacturing a semiconductor device according to claim 1, wherein: 4. The method of manufacturing a semiconductor device according to claim 1, wherein said adhesive thin film layer is made of an anisotropic conductive adhesive. 5. The adhesive thin film layer is made of an insulating adhesive, has conductive projections on a chip circuit and / or a chip mounting substrate, and makes the adhesive thin film layer fluidized by heating. 4. The method of manufacturing a semiconductor device according to claim 1, wherein conduction is ensured between the chip and the chip mounting substrate through the conduction protrusion.